Hollow packaging body and method for manufacturing the same

Abstract

The hollow package (103) of the present invention has a substrate (109), an element (111), a partition (113) and a top plate (115), and is provided with one or more enclosed hollow parts (117) covered by the substrate (109), the partition (113) and the top plate (115), and the substrate (109), the partition (113) and the top plate (115) are sealed by a cured product of a sealing resin composition. The top plate (115) and the partition (113) are both made of organic materials, and the thickness of the top plate (115), the thickness of the partition (113), the width of the partition and the longest width of the hollow part (117) are respectively within a specified range. The sealing resin composition contains (A) an epoxy resin, which contains one or more selected from an epoxy resin having two epoxy groups in the molecule and an epoxy resin having three or more epoxy groups in the molecule; and (B) an inorganic filler.

Description

Technical Field

[0001] The invention relates to a hollow packaging body and a manufacturing method thereof. Background Art

[0002] As a technology for sealing a semiconductor package, there is a technology described in Patent Document 1 (US Patent Application Publication No. 2017 / 0047232). US Patent Application Publication No. 2017 / 0047232 describes that a surface mounted component such as a bulk acoustic wave (BAW) filter component is mounted on the upper surface of a substrate, and the surface mounted component is sealed by covering it with a sheet-like sealing resin composition.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: U.S. Patent Application Publication No. 2017 / 0047232 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] In view of the increasing demands for thinning, miniaturization, and narrowing of terminal spacing in the package development environment in recent years, the inventors of the present invention have studied the technology described in the above-mentioned documents and found that there is room for improvement in maintaining the hollow structure stably after molding and obtaining a package with excellent filling properties for the narrow gap under the chip even in the case of sealing components with a hollow portion.

[0008] Therefore, the present invention provides a sealing technology for obtaining a package body having excellent molding resistance of an element provided with a hollow portion and excellent filling property in a narrow gap.

[0009] Technical solutions for solving technical problems

[0010] According to the present invention, there is provided a hollow package having:

[0011] substrate;

[0012] One or more elements selected from semiconductor elements, MEMS and electronic components mounted on the substrate;

[0013] a spacer provided on an upper portion of the substrate so as to surround the outer periphery of the element; and

[0014] a top plate disposed in contact with the upper surface of the partition plate and covering the upper portion of the element,

[0015] The hollow package is provided with one or more enclosed hollow parts covered by the substrate, the partition and the top plate, and the substrate, the partition and the top plate are sealed by a cured product of the sealing resin composition.

[0016] The top plate and the partition plate are both made of organic materials.

[0017] The thickness of the top plate is not less than 10 μm and not more than 50 μm.

[0018] The thickness of the separator is 5 μm or more and 30 μm or less, and the width of the separator is 5 μm or more and 200 μm or less,

[0019] The longest width of the hollow portion in a cross section perpendicular to the device mounting surface of the substrate is 60 μm or more and 1000 μm or less,

[0020] The sealing resin composition contains:

[0021] (A) an epoxy resin containing one or more selected from epoxy resins having two epoxy groups in the molecule and epoxy resins having three or more epoxy groups in the molecule; and

[0022] (B) Inorganic filling materials.

[0023] Furthermore, according to the present invention, there is provided a method for manufacturing a hollow package, which comprises the following steps 1 and 2:

[0024] (Step 1) a step of providing one or more closed hollow portions by forming a partition plate and a top plate made of at least one organic material on a substrate,

[0025] (Step 2) a step of compression-molding the sealing resin composition at a low pressure of 0.1 MPa or more and less than 5.0 MPa, and sealing the substrate, the partition plate, and the top plate with resin,

[0026] The step 1 includes the step of mounting the element on the substrate in such a manner that at least one element selected from a semiconductor element, a MEMS element, and an electronic component is disposed in the hollow portion.

[0027] The sealing resin composition contains:

[0028] (A) an epoxy resin containing one or more selected from epoxy resins having two epoxy groups in the molecule and epoxy resins having three or more epoxy groups in the molecule; and

[0029] (B) Inorganic filling materials.

[0030] Effects of the Invention

[0031] According to the present invention, it is possible to provide a sealing technology for obtaining a package having excellent molding resistance of an element provided with a hollow portion and excellent filling properties in a narrow gap. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The above-mentioned objects, other objects, features and advantages will become more apparent through the preferred embodiments described below and the accompanying drawings.

[0033] Figure 1 It is a cross-sectional view showing the structure of the structure body in this embodiment.

[0034] Figure 2 It is a cross-sectional view showing the manufacturing process of the structure in this embodiment.

[0035] Figure 3 It is a cross-sectional view showing the manufacturing process of the structure in this embodiment.

[0036] Figure 4 This is a diagram showing the evaluation results of the moldability of a structure having a hollow portion. DETAILED DESCRIPTION

[0037] The following is an explanation of the embodiments using the accompanying drawings. In addition, in all the drawings, the same components are marked with common symbols, and the description is appropriately omitted. In addition, the drawings are schematic diagrams and do not necessarily correspond to the actual dimensional ratios. In addition, unless otherwise specified, the numerical range "X to Y" means "above X and below Y".

[0038] (Hollow packaging, structure)

[0039] Figure 1 It is a cross-sectional view showing an example of the structure of the structure body in this embodiment. Figure 1 The structure 100 shown is a structure in which a hollow package 103 and a package 105 are mounted on a substrate 101. As the substrate 101, for example, an organic substrate such as an interposer can be used.

[0040] The hollow package 103 and the package 105 are both sealed by a sealing material 107. The sealing material 107 is made of a cured product of a sealing resin composition.

[0041] Hereinafter, the hollow package 103 and the package 105 will be described separately.

[0042] First, the hollow package 103 is described. The hollow package 103 includes: a substrate 109; an element 111 mounted on the substrate 109 and selected from one or more of a semiconductor element, a MEMS, and an electronic component; a partition 113, which is arranged on the upper part of the substrate 109 in a manner surrounding the outer periphery of the element 111; and a top plate 115, which is arranged in contact with the upper surface of the partition 113 and covers the upper part of the element 111. The hollow package 103 is provided with one or more closed hollow parts 117 covered by the substrate 109, the partition 113 and the top plate 115. Moreover, the substrate 109, the partition 113 and the top plate 115 are sealed by the sealing material 107. The sealing material 107 is a cured product of a sealing resin composition. The composition of the sealing resin composition will be described later.

[0043] The hollow package 103 is flip-chip connected to the substrate 101 through the bumps 119 provided on the upper part of the top plate 115. In addition, wiring (not shown) connecting the bumps 119 and the conductor on the substrate 101 can be provided on the upper surface and side surface of the top plate 115, the side surface of the partition 113, and the upper surface of the substrate 101.

[0044] The element 111 may be one or more selected from semiconductor elements, MEMS and electronic components, and is specifically an element applied to a package having a hollow structure. Specific examples of such element 111 include high-frequency filters such as BAW filters and surface acoustic wave (SAW) filters.

[0045] The material of the substrate 109 can be selected according to the type of the element 111. The substrate 109 can be, for example, a semiconductor substrate such as a silicon substrate. When the element 111 is a high-frequency filter, the material of the substrate 109 can preferably be a piezoelectric such as lithium tantalate (LT) or lithium niobate (LN).

[0046] The sizes of the partition plate 113 and the top plate 115 may be set according to the size of the element 111 .

[0047] From the viewpoint of ensuring hollow portion 117 around element 111, the thickness of separator 113 is preferably 5 μm or more, more preferably 7 μm or more. From the viewpoint of reducing the thickness of hollow package 103, the thickness of separator 113 is preferably 30 μm or less, more preferably 20 μm or less.

[0048] From the viewpoint of improving the molding resistance, the width of the partition 113 is preferably 5 μm or more, more preferably 20 μm or more. From the viewpoint of miniaturization of the hollow package 103, the width of the partition 113 is preferably 200 μm or less, more preferably 100 μm or less.

[0049] Here, the thickness of the spacer 113 refers to the length of the spacer 113 in the direction perpendicular to the substrate 109 , and the width of the spacer 113 refers to the length of the spacer 113 in the in-plane direction of the substrate 109 .

[0050] From the viewpoint of improving the molding resistance, the thickness of the top plate 115 is preferably 10 μm or more, more preferably 15 μm or more. From the viewpoint of reducing the thickness of the hollow package 103, the thickness of the top plate 115 is preferably 50 μm or less, more preferably 30 μm or less.

[0051] Here, the thickness of the top plate 115 refers to the length of the top plate 115 in the direction perpendicular to the substrate 109 .

[0052] From the viewpoint of ensuring the hollow portion 117 around the element 111, the longest width of the hollow portion 117 in the cross section perpendicular to the element mounting surface of the substrate 109 is preferably 60 μm or more, more preferably 100 μm or more. In addition, from the viewpoint of miniaturization of the hollow package 103, the longest width of the hollow portion 117 is preferably 1000 μm or less, more preferably 800 μm or less.

[0053] The cross-sectional shape of the hollow portion 117 may be, for example, a rectangle. The planar shape of the hollow portion 117 may be, for example, a square, a rectangle, a polygon, a circle, an ellipse, or a combination of these.

[0054] The partition 113 and the top plate 115 are preferably made of organic materials. The materials of the partition 113 and the top plate 115 can be the same or different.

[0055] When at least one of the partition 113 and the top plate 115 is an organic material, from the perspective of stably forming the partition 113 and the top plate 115 through a simple process, the organic material is preferably a photosensitive dry film resist, more preferably a negative photosensitive dry film resist, and further preferably a negative photosensitive dry film resist containing a photoacid generator and an epoxy resin.

[0056] From the same viewpoint, the spacer 113 and the top plate 115 are preferably formed of a cured product of the photosensitive resin composition. The structure of the photosensitive resin composition will be described in detail below.

[0057] (Photosensitive resin composition)

[0058] As the photosensitive resin composition used in forming the partition 113 or the top plate 115, various photosensitive resin compositions containing polyimide, polyamide, benzocyclobutene, polybenzoxazole, maleimide, acrylate resin, phenolic resin or epoxy resin as main components can be used, for example, the composition described in International Publication No. 2012 / 008472 can be used. In this case, the photosensitive resin composition preferably contains a photoacid generator and an epoxy resin.

[0059] The photoacid generator preferably contains tris(4-(4-acetylphenyl)thiophenyl)sulfoniumtetrakis(pentafluorophenyl)borate, and more preferably tris(4-(4-acetylphenyl)thiophenyl)sulfoniumtetrakis(pentafluorophenyl)borate. As tris(4-(4-acetylphenyl)thiophenyl)sulfoniumtetrakis(pentafluorophenyl)borate, for example, Irgacure (registered trademark) PAG290 manufactured by BASF can be used.

[0060] The content of the photoacid generator in the photosensitive resin composition is preferably 0.1% by mass or more and preferably 15% by mass or less, based on the total amount of the photoacid generator and the epoxy resin being 100% by mass.

[0061] From the viewpoint of reducing the cure shrinkage of the photosensitive resin composition, the epoxy equivalent of the epoxy resin is preferably 150 g / eq. or more. In addition, from the viewpoint of suppressing the excessive decrease in the crosslinking density of the photosensitive resin composition and the decrease in the strength, chemical resistance, heat resistance, crack resistance, etc. of the cured film, the epoxy equivalent of the epoxy resin is preferably 500 g / eq. or less.

[0062] Here, the epoxy equivalent is measured according to the method of JIS K7236.

[0063] Furthermore, from the viewpoint of suppressing mask adhesion and suppressing softening at room temperature, the softening point of the epoxy resin is preferably 40° C. or higher, more preferably 50° C. or higher. In addition, from the viewpoint of improving adhesion to the substrate 109, the softening point of the epoxy resin is preferably 120° C. or lower, more preferably 100° C. or lower.

[0064] Here, the softening point is measured according to the method of JIS K7234.

[0065] The epoxy resin more preferably has an epoxy equivalent within the above range and a softening point within the above range. Specific examples of such epoxy resins include EOCN-102S, EOCN-103S, EOCN-104S, EOCN-1020, EOCN-4400H, EPPN-201, EPPN-501H, EPPN-502H, XD-1000, BREN-S, NER-7604, NER-7403, NER-1302, NER-7516, NC-3000H (all trade names, manufactured by Nippon Kayaku Co., Ltd.), EPICOAT 157S70 (trade name, manufactured by Mitsubishi Chemical Co., Ltd.), and EHPE3150 (trade name, manufactured by DAICEL CHEMICAL INDUSTRIES, LTD.).

[0066] Specific examples of the epoxy resin include novolac-type epoxy resins and epoxy resins obtained by oxidation reaction of a compound having an olefin.

[0067] In addition, from the viewpoint that the chemical resistance, plasma resistance and transparency of the cured product are high and the cured product is a low hygroscopic cured product, specific examples of preferred epoxy resins include bisphenol A novolac type epoxy resins such as EPICOAT 157 (manufactured by Mitsubishi Chemical Co., Ltd., epoxy equivalent 180 to 250 g / eq., softening point 80 to 90° C.), EPON SU-8 (trade name, manufactured by Resolution Performance Products LLC., epoxy equivalent 195 to 230 g / eq., softening point 80 to 90° C.); biphenyl-phenol novolac type epoxy resins such as NC-3000 (trade name, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 270 to 300 g / eq., softening point 55 to 75° C.);

[0068] Bisphenol A or F type epoxy resins in which a part of the alcoholic hydroxyl groups are epoxidized, such as NER-7604 and NER-7403 (both trade names, bisphenol F type epoxy resins in which a part of the alcoholic hydroxyl groups are epoxidized, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 200 to 500 g / eq., softening point 55 to 75° C.), NER-1302 and NER-7516 (both trade names, bisphenol A type epoxy resins in which a part of the alcoholic hydroxyl groups are epoxidized, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 200 to 500 g / eq., softening point 55 to 75° C.);

[0069] Cresol novolac type epoxy resins such as EOCN-1020 (trade name, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 190 to 210 g / eq., softening point 55 to 85° C.);

[0070] Multifunctional epoxy resins such as NC-6300 (trade name, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 230 to 235 g / eq., softening point 70 to 72° C.);

[0071] Epoxy resins such as polycarboxylic acid epoxy resins (epoxy equivalent is usually 300 to 900 g / eq.) whose production method is described in Japanese Patent Application Laid-Open No. 10-97070 are obtained by reacting a reaction product of an epoxy resin having at least two epoxy groups in one molecule and a compound having at least one hydroxyl group and one carboxyl group in one molecule with a polybasic acid anhydride;

[0072] EPPN-201 (trade name, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 180 to 200 g / eq., softening point 65 to 78° C.) and other trisphenol methane type epoxy resins;

[0073] Triphenylmethane type epoxy resins such as EPPN-501H (trade name, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 162 to 172 g / eq., softening point 51 to 57° C.), EPPN-501HY (trade name, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 163 to 175 g / eq., softening point 57 to 63° C.), and EPPN-502H (trade name, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 158 ​​to 178 g / eq., softening point 60 to 72° C.);

[0074] Alicyclic epoxy resins such as EHPE3150 (trade name, manufactured by DAICEL CHEMICAL INDUSTRIES, LTD., epoxy equivalent 170 to 190 g / eq., softening point 70 to 85° C.);

[0075] XD-1000 (trade name, manufactured by Nippon Kayaku Co., Ltd., epoxy equivalent 245 to 260 g / eq., softening point 68 to 78° C.) and other dicyclopentadiene epoxy resins; and

[0076] The cocondensate obtained by the method described in JP-A-2007-291263 is an epoxy resin (epoxy equivalent is usually 400 to 900 g / eq.).

[0077] From the viewpoint of improving the molding resistance of the hollow portion 117 , the content of the epoxy resin in the photosensitive resin composition is preferably 85% by mass or more and preferably 99.9% by mass or less, based on the total amount of the photoacid generator and the epoxy resin being 100% by mass.

[0078] The photosensitive resin composition may contain components other than the photoacid generator and the epoxy resin. Specific examples of such components include one or more of a miscible reactive epoxy monomer and a solvent.

[0079] The photosensitive resin composition contains a reactive epoxy monomer, which can improve the performance of the pattern. Specific examples of the reactive epoxy monomer include diethylene glycol diglycidyl ether, hexanediol diglycidyl ether, dimethylolpropane diglycidyl ether, polypropylene glycol diglycidyl ether (e.g., ED506 manufactured by ADEKA CORPORATION), trimethylolpropane triglycidyl ether (e.g., ED505 manufactured by ADEKA CORPORATION), trimethylolpropane triglycidyl ether (e.g., low chlorine type, manufactured by Nagase ChemteX Corporation, EX321L), pentaerythritol tetraglycidyl ether, etc., preferably, a low chlorine type monomer that has been subjected to a low chlorine manufacturing method or a refining process.

[0080] Regarding the content of the reactive epoxy monomer, when the total of the photoacid generator, the epoxy resin and the appropriate reactive epoxy monomer is taken as the solid content of the resist, it is, for example, greater than 0 mass %. In addition, from the viewpoint of suppressing mask adhesion, it is preferably 10 mass % or less, and more preferably 7 mass % or less in the above-mentioned solid content.

[0081] In addition, the reactive epoxy monomer in this specification refers to an epoxy compound which is liquid at room temperature and has a weight average molecular weight calculated in terms of polystyrene based on the measurement results of GPC of 1,000 or less.

[0082] In addition, the photosensitive resin composition contains a solvent, which can reduce the viscosity of the photosensitive resin composition and improve the coating properties. As a solvent, as long as it is an organic solvent commonly used in inks, coatings, etc., and can dissolve the various components of the photosensitive resin composition, it can be used without limitation. Specific examples of solvents include ketones such as acetone, methyl ethyl ketone, cyclohexanone, and cyclopentanone; aromatic hydrocarbons such as toluene, xylene, and tetramethylbenzene; glycol ethers such as dipropylene glycol dimethyl ether and dipropylene glycol diethyl ether; esters such as ethyl acetate, butyl acetate, butyl cellosolve acetate, carbitol acetate, propylene glycol monomethyl ether acetate, and γ-butyrolactone; alcohols such as methanol, ethanol, cellosolve, and methyl cellosolve; aliphatic hydrocarbons such as octane and decane; petroleum solvents such as petroleum ether, naphtha, hydrogenated naphtha, and solvent naphtha.

[0083] From the viewpoint of appropriately maintaining the solubility of the main component, the volatility of the component, the liquid viscosity of the composition, etc., the content of the solvent is preferably 10% by mass or more, and preferably 95% by mass or less, and more preferably 90% by mass or less, based on the total amount of the photosensitive resin composition.

[0084] In addition, from the viewpoint of improving the adhesion of the composition to the substrate, the photosensitive resin composition may further contain an adhesion-imparting agent. The adhesion-imparting agent is, for example, a coupling agent such as a silane coupling agent and a titanium coupling agent, and is preferably a silane coupling agent.

[0085] The content of the adhesion-imparting agent is, for example, greater than 0 mass %, and is preferably 15 mass % or less, more preferably 5 mass % or less, based on the total amount of the photosensitive resin composition from the viewpoint of suppressing reduction in physical properties of the cured film.

[0086] The photosensitive resin composition may further contain a sensitizer from the viewpoint of absorbing ultraviolet rays and supplying the absorbed light energy to the photoacid generator.

[0087] Specific examples of the sensitizer include thioxanthones such as 2,4-diethylthioxanthone and anthracene compounds (9,10-dialkoxyanthracene derivatives) having C1 to C4 alkoxy groups at positions 9 and 10 such as 9,10-dimethoxy-2-ethylanthracene. The 9,10-dialkoxyanthracene derivatives may further have a substituent.

[0088] The sensitizer is more preferably 2,4-diethylthioxanthone and 9,10-dimethoxy-2-ethylanthracene.

[0089] Since the sensitizer can exhibit its effect even in a small amount, its content is, for example, greater than 0 mass %, and preferably 30 mass % or less, and more preferably 20 mass % or less, based on the photoacid generator.

[0090] Furthermore, when it is necessary to reduce the influence of ions from the photoacid generator, the photosensitive resin composition may further contain an ion scavenger such as an organic aluminum compound.

[0091] The amount of the ion scavenger added is, for example, more than 0% by mass, and preferably 10% by mass or less, relative to the solid content when the total of the photoacid generator, the epoxy resin, and the appropriate reactive epoxy monomer is taken as the solid content of the resist.

[0092] The photosensitive resin composition may contain various additives such as a thermoplastic resin, a colorant, a tackifier, a defoaming agent, and a leveling agent.

[0093] Examples of the thermoplastic resin include polyethersulfone, polystyrene, and polycarbonate.

[0094] Examples of the colorant include phthalocyanine blue, phthalocyanine green, iodine green, crystal violet, titanium oxide, carbon black, and naphthalene black.

[0095] Examples of the thickener include Orben, modified bentonite (Bentone), and montmorillonite.

[0096] Examples of the defoaming agent include silicone-based, fluorine-based, and polymer-based defoaming agents.

[0097] The amount of these additives added can be appropriately selected depending on the intended use, and is, for example, 0.1% by mass or more and 30% by mass or less, respectively, based on the total amount of the photosensitive resin composition.

[0098] The photosensitive resin composition may further contain an inorganic filler. Specific examples of the inorganic filler include barium sulfate, barium titanate, silicon oxide, amorphous silica, talc, clay, magnesium carbonate, calcium carbonate, aluminum oxide, aluminum hydroxide, and mica powder.

[0099] The mixing ratio of the inorganic filler is, for example, greater than 0 mass % in the photosensitive resin composition, and is, for example, 60 mass % or less.

[0100] From the viewpoint of improving the molding resistance of the hollow portion 117, the photosensitive resin composition preferably contains more than 0.1 parts by mass and less than 15 parts by mass of a photoacid generator, more than 85 parts by mass and less than 99.9 parts by mass of an epoxy resin, more than 1 part by mass and less than 10 parts by mass of a reactive epoxy monomer, and more than 5.8 parts by mass and less than 2090 parts by mass of a solvent. If necessary, the above-mentioned adhesion imparting agent, sensitizer, ion scavenger, thermoplastic resin, colorant, thickener, defoaming agent, leveling agent and inorganic filler may also be added.

[0101] Next, the method for producing the photosensitive resin composition will be described.

[0102] In this embodiment, the photosensitive resin composition is obtained by mixing and stirring the raw material components in a predetermined amount using a common method, and can also be dispersed and mixed using a dissolver, a homogenizer, a three-roll mill or other dispersing machine as needed. In addition, after mixing, it can also be filtered using a sieve, a membrane filter or the like.

[0103] Next, the properties of the photosensitive resin composition will be described. The photosensitive resin composition can be in a liquid state, for example.

[0104] In addition, the photosensitive resin composition is preferably a dry film resist. The dry film resist is obtained by applying the photosensitive resin composition on the base film using a roller coater, a die coater, a blade coater, a rod coater, a gravure coater, etc., for example, in a drying oven set to be above 45°C and below 100°C, and removing a specified amount of solvent. In addition, a cover film or the like may be appropriately laminated on the resist. As specific examples of the base film and cover film that become the resist substrate, films such as polyester, polypropylene, polyethylene, TAC, and polyimide may be cited. These films may also be subjected to demolding treatment with a silicone-based demolding agent or a non-silicone-based demolding agent.

[0105] Next, return Figure 1 The package 105 will be described. The package 105 is formed by flip-chip connection of a semiconductor element 121 to the element mounting surface of the substrate 101 via bumps 123 . In the package 105 , the semiconductor element 121 and the bumps 123 are sealed by a sealing material 107 .

[0106] Specific examples of the package 105 include QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), LF-BGA (Lead Flame BGA), SiP (System In Package), and LGA (Land Grid Array).

[0107] Next, the sealing material 107 will be described. The sealing material 107 is a cured product of a sealing resin composition. Figure 1 In the embodiment, a sealing material 107 is provided on the entire surface of the element mounting surface of the substrate 101 to seal the hollow package 103 and the package 105 .

[0108] (Sealing resin composition)

[0109] In the present embodiment, the sealing resin composition is used for sealing the substrate 109 , the partition plate 113 , and the top plate 115 of the hollow package 103 , and contains the following components (A) and (B).

[0110] (A) an epoxy resin containing one or more selected from epoxy resins having two epoxy groups in the molecule and epoxy resins having three or more epoxy groups in the molecule;

[0111] (B) Inorganic filling materials.

[0112] (ingredient (A))

[0113] The epoxy resin of the component (A) contains one or more selected from epoxy resins having two epoxy groups in the molecule and epoxy resins having three or more epoxy groups in the molecule.

[0114] From the viewpoint of improving the filling properties of the sealing resin composition and the viewpoint of improving the molding resistance of the hollow package, component (A) preferably contains one or more selected from biphenyl aralkyl type epoxy resin; triphenylmethane type epoxy resin; biphenyl type epoxy resin; and bisphenol A type epoxy resin, bisphenol F type epoxy resin, tetramethyl bisphenol F type epoxy resin and other bisphenol type epoxy resins, and more preferably contains one or more selected from biphenyl aralkyl type epoxy resin, bisphenol A type epoxy resin and bisphenol A type epoxy resin composition.

[0115] From the viewpoint of obtaining appropriate fluidity during molding and thus achieving improved filling properties and moldability, when the total amount of the sealing resin composition is set to 100 mass%, the content of component (A) in the sealing resin composition is preferably 2 mass% or more, more preferably 3 mass% or more, and further preferably 4 mass% or more.

[0116] From the perspective of improving the molding resistance of the hollow package 103, when the total amount of the sealing resin composition is set to 100 mass%, the content of component (A) in the sealing resin composition is preferably 40 mass% or less, more preferably 30 mass% or less, further preferably 15 mass% or less, and even more preferably 10 mass% or less.

[0117] (Component (B))

[0118] As the inorganic filler of component (B), materials commonly used in sealing resin compositions can be used. Specific examples of inorganic fillers include silica such as fused silica and crystalline silica; alumina; talc; titanium oxide; silicon nitride; and aluminum nitride. These inorganic fillers can be used alone or in combination of two or more.

[0119] Among them, from the viewpoint of excellent versatility, the inorganic filler preferably contains silica, and more preferably uses fused silica.

[0120] Regarding the size of the inorganic filler, from the viewpoint of improving the fluidity of the sealing resin composition and being able to fill the sealing resin composition without generating gaps between the semiconductor element or the like and the substrate, the content of the undersize portion when passing through a sieve with a mesh size of 20 μm is preferably 80% by mass or more, more preferably 90% by mass or more, and further preferably 100% by mass relative to the total amount of the inorganic filler. Furthermore, the upper limit of the content of the undersize portion when passing through the above-mentioned sieve with a mesh size of 20 μm is not limited and is 100% by mass or less.

[0121] From the viewpoint of improving the low hygroscopicity and low thermal expansion of the sealing material formed using the sealing resin composition and more effectively improving the moisture resistance reliability and reflow resistance of the obtained semiconductor package, when the total amount of the sealing resin composition is set to 100 mass%, the content of the inorganic filler in the sealing resin composition is preferably 50 mass% or more, more preferably 70 mass% or more, and further preferably 80 mass% or more.

[0122] In addition, from the viewpoint of more effectively improving the fluidity and filling properties of the sealing resin composition during molding, when the total amount of the sealing resin composition is set to 100 mass%, the content of the entire inorganic filler in the sealing resin composition is preferably 95 mass% or less, more preferably 93 mass% or less, and further preferably 90 mass% or less.

[0123] In the present embodiment, the sealing resin composition may contain components other than the epoxy resin and the inorganic filler.

[0124] For example, the sealing resin composition may further contain a curing agent.

[0125] (Curing agent)

[0126] The curing agent can be roughly divided into three types, for example, a polyaddition type curing agent, a catalyst type curing agent, and a condensation type curing agent, and one or more types of these can be used.

[0127] Examples of polyaddition curing agents include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and meta-xylylenediamine (MXDA); aromatic polyamines such as diaminodiphenylmethane (DDM), meta-phenylenediamine (MPDA), and diaminodiphenyl sulfone (DDS); polyamine compounds including dicyandiamide (DICY), organic acid dihydrazide, and the like; acid anhydrides including alicyclic acid anhydrides such as hexahydrophthalic anhydride (HHPA), methyltetrahydrophthalic anhydride (MTHPA), aromatic acid anhydrides such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), and benzophenonetetracarboxylic acid (BTDA); phenolic resin curing agents such as novolac-type phenolic resins and polyvinylphenol; polythiol compounds such as polysulfides, thioesters, and thioethers; isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; organic acids such as carboxylic acid-containing polyester resins, and the like.

[0128] Examples of catalyst-type curing agents include tertiary amine compounds such as dimethylbenzylamine (BDMA) and 2,4,6-tris(dimethylaminomethyl)phenol (DMP-30); imidazole compounds such as 2-methylimidazole and 2-ethyl-4-methylimidazole (EMI24); and Lewis acids such as BF3 coordination compounds.

[0129] Examples of the condensation type curing agent include phenol resins, urea resins such as methylol-containing urea resins, and melamine resins such as methylol-containing melamine resins.

[0130] Among them, from the viewpoint of improving the balance about flame resistance, moisture resistance, electrical properties, curability and storage stability, etc., preferably a phenolic resin curing agent. As the phenolic resin curing agent, all monomers, oligomers and polymers having more than two phenolic hydroxyl groups in one molecule can be used, and their molecular weight and molecular structure are not limited.

[0131] As the phenolic resin curing agent used in the curing agent, for example, biphenyl aralkyl type phenolic resin; phenol novolac resin, cresol novolac resin, bisphenol novolac resin and other phenolic varnish type phenolic resin; polyvinylphenol; phenol-hydroxybenzaldehyde resin, triphenylmethane type phenolic resin, formaldehyde-modified triphenylmethane type phenolic resin and other modified triphenylmethane type phenolic resin and other multifunctional phenolic resin; terpene modified phenolic resin, dicyclopentadiene modified phenolic resin and other modified phenolic resin; aralkyl type phenolic resin such as phenol aralkyl resin having phenylene skeleton and / or biphenylene skeleton, naphthol aralkyl resin having phenylene skeleton and / or biphenylene skeleton; bisphenol compounds such as bisphenol A and bisphenol F, etc., these can be used alone or in combination of two or more. Among them, from the viewpoint of improving heat resistance and filling property, it is more preferable to use multifunctional phenolic resin such as phenol-hydroxybenzaldehyde resin. From the same viewpoint, it is also preferred to use one or more selected from biphenyl aralkyl phenol resins and triphenylmethane phenol resins.

[0132] In the present embodiment, from the viewpoint of achieving excellent fluidity during molding and improving filling and moldability, when the total amount of the sealing resin composition is set to 100 mass %, the content of the curing agent in the sealing resin composition is preferably 1 mass % or more, more preferably 2 mass % or more, and further preferably 3 mass % or more.

[0133] In addition, with respect to semiconductor packages that use a cured product of a sealing resin composition as a sealing material, from the viewpoint of improving moisture-resistant reliability and reflow resistance, when the total amount of the sealing resin composition is set to 100% by mass, the content of the curing agent in the sealing resin composition is preferably 25% by mass or less, more preferably 15% by mass or less, and even more preferably 10% by mass or less.

[0134] In addition, the sealing resin composition may also contain components other than the above components, for example, one or more of various additives such as coupling agents, curing accelerators, fluidity imparting agents, mold release agents, ion trapping agents, low stress components, flame retardants, colorants, antioxidants, etc. may be appropriately matched. Regarding the content of these components, when the total amount of the sealing resin composition is set to 100% by mass, each can be set to, for example, about 0.1 to 5% by mass.

[0135] The coupling agent may contain, for example, one or more of the known coupling agents selected from various silane compounds such as epoxy silane, mercapto silane, amino silane such as secondary amino silane, alkyl silane, ureido silane, vinyl silane, methacrylate silane, titanium compounds, aluminum chelates, aluminum / zirconium compounds, etc.

[0136] The curing accelerator (catalyst) may contain, for example, a compound containing a phosphorus atom selected from organic phosphines, tetrasubstituted phosphonium compounds, phosphobetaine compounds, adducts of phosphine compounds and quinone compounds, adducts of phosphine compounds and silane compounds, etc.; 1,8-diazabicyclo[5.4.0]undec-7-ene, dimethylbenzylamine, 2-methylimidazole and other amidines or tertiary amines, quaternary salts of the above amidines or amines, etc., one or more of the compounds containing nitrogen atoms. Among them, from the viewpoint of improving curability, it is more preferable to contain a compound containing a phosphorus atom. In addition, from the viewpoint of improving the balance between moldability and curability, it is more preferable to contain a latent substance such as a tetrasubstituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, an adduct of a phosphonium compound and a silane compound.

[0137] A specific example of the fluidity-imparting agent is 2,3-dihydroxynaphthalene.

[0138] The release agent may contain one or more selected from, for example, natural waxes such as palm wax, synthetic waxes such as montanate wax, higher fatty acids such as zinc stearate and metal salts thereof, and paraffin.

[0139] A specific example of the ion scavenger is hydrotalcite.

[0140] Specific examples of the low-pressure component include silicone oil and silicone rubber.

[0141] Specific examples of the flame retardant include aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, and phosphazene.

[0142] Specific examples of the colorant include carbon black and red iron oxide.

[0143] Specific examples of the antioxidant include hindered phenol compounds, hindered amine compounds, and thioether compounds.

[0144] From the viewpoint of improving the heat resistance of the cured product, the glass transition temperature (Tg) of the cured product of the sealing resin composition is preferably 100° C. or higher, more preferably 110° C. or higher, and even more preferably 120° C. or higher.

[0145] The upper limit of Tg of the cured product is not limited, but is preferably 200°C or lower, more preferably 180°C or lower, and further preferably 160°C or lower from the viewpoint of improving the toughness of the cured product.

[0146] Here, the glass transition temperature of the cured product was measured using a thermal mechanical analysis (TMA) apparatus (TMA100 manufactured by Seiko Instruments Inc.) in a measurement temperature range of 0° C. to 320° C. and a temperature increase rate of 5° C. / min.

[0147] In the present embodiment, the sealing resin composition is preferably in the form of an ingot or granules. Specifically, a granular sealing resin composition may be a powdery resin composition. Here, the sealing resin composition being a powdery resin composition refers to the case of being in a powdery or granular form.

[0148] Next, a method for producing the sealing resin composition will be described.

[0149] In the present embodiment, the sealing resin composition can be obtained, for example, by mixing the above-mentioned components by a known method, and then melt-kneading using a mixer such as a roller, a kneader or an extruder, and then pulverizing after cooling. In addition, the obtained sealing resin composition can be appropriately adjusted in terms of dispersion or fluidity.

[0150] In this embodiment, by respectively using the photosensitive resin composition and the sealing resin composition of the above-mentioned structure and setting the size of the partition 113 and the top plate 115 to a specified size, it is possible to obtain a structure 100 that stably maintains the hollow portion 117 in the hollow package 103 and has excellent filling properties for narrow gaps such as between multiple bumps 123.

[0151] also, Figure 1 1 shows an example in which a hollow package 103 and a package 105 are mounted on a substrate 101. However, in this embodiment, the structure may be mounted with only a hollow package or may be mixed with a hollow package and an element without a hollow portion. Furthermore, when the structure includes a plurality of packages, the plurality of packages may be singulated by the following process.

[0152] Next, a method for manufacturing the hollow package 103 and the structure 100 including the hollow package 103 will be described. In the present embodiment, the method for manufacturing the hollow package 103 includes the following steps 1 and 2.

[0153] (Step 1) a step of providing one or more closed hollow portions 117 by forming a partition 113 and a top plate 115 made of at least one organic material on a substrate 109;

[0154] (Step 2) A step of compression-molding the sealing resin composition in the present embodiment described above at a low pressure of 0.1 MPa or more and less than 5.0 MPa to resin-seal the substrate 109 , the spacer 113 , and the top plate 115 .

[0155] Below, reference Figure 2 (a)~ Figure 2 (d) is further described in detail. Figure 2 (a)~ Figure 2 (d) is a cross-sectional view showing a manufacturing process of the structure 100 .

[0156] First, if Figure 2 As shown in (a), the component 111 is loaded on the substrate 109.

[0157] Then, if Figure 2 As shown in (b), on the element mounting surface of the substrate 109, a partition 113 is formed to be separated from the element 111 and surround the outer periphery of the element 111, a top plate 115 covering the upper part of the partition 113 is formed on the partition 113, and a hollow portion 117 is provided. However, as shown in reference Figure 3 (a)~ Figure 3 (e) will be described later. Depending on the situation, the element 111 can be loaded after the partition is formed, and finally the top plate 115 can be formed.

[0158] The spacers 113 and the top plate 115 having a predetermined planar shape can be formed by, for example, using the above-mentioned photosensitive resin composition and by the method described in International Publication No. 2012 / 008472.

[0159] Specifically, when a liquid photosensitive resin composition is used, the photosensitive resin composition is applied to the substrate 109 provided with the element 111, for example, with a thickness of 0.1 μm or more and 1000 μm or less, for example, using a spin coater, and heat-treated at 60° C. or more and 130° C. or less for 5 minutes or more and 60 minutes or less to remove the solvent, thereby forming a photosensitive resin composition layer. Then, a mask having a pattern corresponding to the planar shape of the partition 113 is placed, and ultraviolet rays are irradiated, for example, heat-treated at 50° C. or more and 130° C. or less for 1 minute or more and 50 minutes or less. Then, a developer is used, for example, at 15° C. or more and 50° C. or less, to develop the unexposed portion for 1 minute or more and 180 minutes or less to form a pattern.

[0160] For example, a permanent protective film is obtained by heat-treating the film at a temperature of 130°C to 200°C. As a developer, for example, an organic solvent such as γ-butyrolactone, triethylene glycol dimethyl ether, propylene glycol monomethyl ether acetate, or a mixture of these organic solvents and water can be used. For development, a developing device such as a stirring paddle type, a spray type, or a shower type can be used, and ultrasonic irradiation can also be performed appropriately.

[0161] In addition, when a dry film resist is used, for example, the covering film is removed and transferred to the substrate 109 by a hand roller, a laminator, etc., for example, at a temperature of more than 30°C and less than 100°C and a pressure of more than 0.05 MPa and less than 2 MPa, and exposed according to the liquid photosensitive resin composition. After exposure, it can be baked, developed, and heat treated.

[0162] The top plate 115 can be formed after the spacers 113 are formed by the method described above when using the dry film resist.

[0163] By using a film-like photosensitive resin composition (dry film resist), the steps of coating and drying on the substrate 109 can be omitted, so the manufacturing steps of the spacer 113 and the top plate 115 can be simplified.

[0164] After the top plate 115 is formed, a bump 119 such as a solder bump is formed at a predetermined position on the upper surface of the top plate 115, that is, on the back side of the bonding surface with the spacer 113. Figure 2 (b)).

[0165] Figure 2 (a) and Figure 2 (b) shows an example of mounting a plurality of components 111 on a substrate 109. In this case, Figure 2 As shown in (c), the substrate 109 is divided into individual pieces for each element 111, thereby obtaining a plurality of packages.

[0166] Next, the singulated package is flip-chip connected at a predetermined position on the substrate 101 through the bump 119. During the manufacture of the structure 100, the semiconductor element 121 ( Figure 2 (d)).

[0167] Then, the element mounting surface of the substrate 101 is sealed with the sealing resin composition of the present embodiment to form the sealing material 107. At this time, from the viewpoint of improving the molding resistance of the hollow package 103 and improving the filling property for the narrow gap between the bumps 123, etc., it is preferable to form the sealing material 107 by compression molding.

[0168] From the same viewpoint, the molding pressure during compression molding is preferably 0.1 MPa or more, more preferably 0.5 MPa or more, and is preferably less than 5.0 MPa, more preferably 3.0 MPa or less, further preferably 2.0 MPa or less, and even more preferably 1.0 MPa or less.

[0169] Through the above steps, a structure 100 having a hollow package 103 and a package 105 can be obtained. In this embodiment, by performing low-pressure molding using a compression molding method using a sealing resin composition containing components (A) and (B), the hollow portion 117 provided on the hollow package 103 can have excellent molding resistance, and even when the bumps 123 are arranged at a narrow pitch in the package 105, the gap filling characteristics of the bumps 123 can be excellent.

[0170] In the above description, the spacer 113 and the top plate 115 are formed after the element 111 is placed on the substrate 109, but the order of forming the components may be different. Figure 3 (a)~ Figure 3 (e) is a cross-sectional view showing another manufacturing step of the structure 110 .

[0171] Figure 3 (a)~ Figure 3 In the manufacturing process shown in (e) of FIG. 1 , first, a spacer 113 ( Figure 3 Then, the element 111 is mounted on the substrate 109 in such a manner that the periphery of the element 111 is surrounded by the partition 113 ( Figure 3 (b)).

[0172] Next, a top plate 115 is formed on the partition plate 113 to cover the upper portion of the partition plate 113, and a hollow portion 117 ( Figure 3 (c)).

[0173] These steps can be referred to, for example, Figure 2 (a) and Figure 2 (b) and proceed according to the above steps.

[0174] Then, according to the reference Figure 2 (b) and Figure 2 Each step (c) forms a bump 119 such as a solder bump ( Figure 3 (c)), and the substrate 109 is singulated for each element 111, thereby obtaining a plurality of packages ( Figure 3 (d)). Moreover, according to the reference Figure 2 In step (d), the singulated package is flip-chip connected to a predetermined position ( Figure 3(e)).

[0175] Through the above steps, the structure 100 including the hollow package 103 and the package 105 can be obtained, and the same effects as those described above can be obtained.

[0176] As mentioned above, although this invention was demonstrated based on embodiment, this invention is not limited to the said embodiment, The structure can be changed within the range which does not change the summary of this invention.

[0177] [Example]

[0178] Hereinafter, the present embodiment will be described in detail with reference to Examples. In addition, the present embodiment is not limited to the description of these Examples.

[0179] (Example 1)

[0180] The sealing resin composition was prepared using the formulation shown in Table 1, and the element was sealed using the cured product of the obtained composition. The filling characteristics and the mold resistance of the hollow portion at this time were evaluated.

[0181] First, the raw material components of the sealing resin composition used in the following examples are shown.

[0182] (Epoxy resin)

[0183] Epoxy resin 1: a mixed resin of a phenol aralkyl type resin containing a biphenylene skeleton (manufactured by Nippon Kayaku Co., Ltd., NC3000L) and a bisphenol A type epoxy resin (manufactured by Japan Epoxy Resin Co., Ltd., jER (registered trademark) YL6810)

[0184] Epoxy resin 2: Phenol aralkyl type resin containing biphenylene skeleton (manufactured by Nippon Kayaku Co., Ltd., NC3000L)

[0185] (Curing agent)

[0186] Curing agent 1: Phenol aralkyl type resin containing biphenylene skeleton (manufactured by MEIWA PLASTIC INDUSTRIES, LTD., MEH-7851SS)

[0187] (catalyst)

[0188] Catalyst 1: Tetraphenylphosphonium bis(naphthalene-2,3-dioxy)phenyl silicate and tetraphenylphosphonium-4,4'-sulfonyl diphenolate

[0189] (Inorganic filler)

[0190] Inorganic filler 1: fused spherical silica (TS-6021 manufactured by Micron, Inc.) The portion passing through a sieve with a mesh size of 20 μm: 100 mass %

[0191] (Preparation of Sealing Resin Composition)

[0192] The raw materials were kneaded using a twin-screw kneading extruder at 110° C. for 7 minutes according to the formulation described in Table 1. The obtained kneaded product was degassed, cooled, and then pulverized using a pulverizer to obtain a granular sealing resin composition.

[0193] (Physical Properties of Sealing Resin Composition)

[0194] (Tg)

[0195] The obtained sealing resin composition was compression molded in a mold using a compression molding machine (PMC1040 manufactured by TOWA Corporation) at a mold temperature of 175°C, a molding pressure of 9.8 MPa, and a curing time of 300 seconds to obtain a cured product having a length of 10 mm, a width of 4 mm, and a thickness of 4 mm.

[0196] The obtained cured product was post-cured at 175°C for 4 hours and then measured using a thermomechanical analyzer (TMA100 manufactured by Seiko Denshi Industries, Ltd.) at a measurement temperature range of 0°C to 320°C and a temperature increase rate of 5°C / min to calculate Tg.

[0197] (evaluate)

[0198] (Filling characteristics)

[0199] On a substrate (printed wiring substrate with a copper circuit), a semiconductor element with a thickness of 100 μm and a size of 5 mm×5 mm square is connected by a bump flip chip. The material of the bump is set to Cu, and the bump height is set to 50 μm, the bump diameter is set to 90 μm, and the spacing between the bumps is set to 90 μm. Six of the above-mentioned semiconductor elements are joined on one substrate, so that the surface loaded with the semiconductor elements faces downward, and is fixed to the upper mold by a substrate fixing mechanism. Next, after the resin granules composed of the sealing resin composition are supplied to the lower mold cavity, the cavity is decompressed, and a plate is formed by a compression molding machine (manufactured by TOWA Corporation) to obtain a molded product. The molding conditions at this time are set to a mold temperature of 150°C or 175°C, a molding pressure of 1.0 MPa or 2.0 MPa, and a curing time of 300 seconds.

[0200] The obtained molded product was not separated into individual pieces, but the filling property was evaluated directly using a microscope manufactured by KEYENCE. The six semiconductor elements were checked for filling defects such as unfilled areas and voids in the areas between bumps, and the number of elements with filling defects among the six elements was taken as the filling defect occurrence rate (%).

[0201] [Table 1]

[0202]

[0203] As can be seen from Table 1, the sealing resin composition obtained in Example 1 is excellent in filling property into a narrow gap.

[0204] (Molding resistance of hollow part)

[0205] A structure having a hollow portion was sealed with the sealing resin composition of Example 1, and the molding resistance of the hollow portion was evaluated.

[0206] As a negative photosensitive dry film resist, SU-8 3000CFDFR series (trade name, manufactured by Nippon Kayaku Co., Ltd., dry film resists of thicknesses of 20 μm (3020CF), 30 μm (3030CF), and 45 μm (3045CF) each containing epoxy resin and a photoacid generator) was used.

[0207] A structure provided with a hollow portion is formed according to the following steps. That is, on a silicon wafer, the cover film of the negative photosensitive dry film resist is peeled off, and laminated a specified number of times at a roller temperature of 70°C, an air pressure of 0.2MPa, and a speed of 0.5m / min to obtain a photosensitive resin composition layer of a specified thickness. The photosensitive resin composition layer is subjected to pattern exposure (soft contact, i-ray) using an i-ray exposure device (mask aligner: manufactured by Ushio Inc.). Then, a post-exposure bake is performed at 95°C for 4 minutes using a hot plate, and a development treatment is performed at 23°C for 5 minutes using propylene glycol monomethyl ether acetate (PGMEA) and an immersion method to obtain a cured resin pattern on the wafer. Then, a hard bake is performed at 180°C for 60 minutes using a warm air convection oven. The obtained resin pattern has a shape in which linear resins of a specified height and width are arranged in parallel at a specified interval, and it is used as a partition.

[0208] Next, on the wafer formed with the partitions, the cover film of the photosensitive dry film resist was peeled off and laminated a predetermined number of times at a roller temperature of 40°C, an air pressure of 0.1 MPa, and a speed of 1.0 m / min to obtain a photosensitive resin composition layer of a predetermined thickness. Then, pattern exposure, post-exposure baking, development treatment, and hard baking were performed according to the partition formation method to form a resin pattern covering the upper part between adjacent partitions with a predetermined width and thickness, and this was used as a top plate.

[0209] The dimensions of the bulkhead and top plate are shown below.

[0210] Thickness of separator (height of gap): 20 μm

[0211] Spacer interval (gap width): 10 to 500 μm (made in 10 μm increments)

[0212] Width of separator: 30μm

[0213] Top plate thickness: 20μm, 30μm or 45μm

[0214] Width of top plate: Add the sum of the widths of the two partitions (60 μm) to the spacing of the above partitions. 70 to 560 μm

[0215] A wafer having a structure composed of a top plate and a spacer was placed in a compression molding machine (manufactured by TOWA Corporation) and compression-molded using the sealing resin composition of Example 1 to obtain a sample. The compression molding conditions were set to a mold temperature of 175° C., a molding pressure of 1.0 MPa, 2.0 MPa, or 3.0 MPa, and a curing time of 120 seconds.

[0216] The hollow portion forming resistance of the samples obtained in Example 1 was evaluated. Specifically, the cross section of the hollow portion of each sample was observed with a scanning electron microscope, and the maximum displacement of the top plate (Maximum cap displacement: δmax) was measured as follows. The sample was considered acceptable if δmax was less than 5 μm.

[0217] δmax = height of the top plate surface on the partition - height of the top plate surface at the midpoint of the partition interval

[0218] Figure 4 This is a graph showing the relationship between the molding pressure (MPa) and the maximum value (μm) of the top plate width that is acceptable for each top plate thickness.

[0219] This application claims the benefit of priority based on Japanese patent application No. 2018-246180, filed on December 27, 2018, and all the disclosures thereof are incorporated herein by reference.

Claims

1. A hollow package, characterized in that: have: substrate; One or more elements selected from semiconductor elements, MEMS and electronic components mounted on the substrate; a partition plate provided on an upper portion of the substrate so as to surround the outer periphery of the element; and a top plate disposed in contact with the upper surface of the partition plate and covering the upper portion of the element, The hollow package is provided with one or more enclosed hollow parts covered by the substrate, the partition and the top plate, and the substrate, the partition and the top plate are sealed by a cured product of a sealing resin composition, The top plate and the partition plate are both made of organic material, and the organic material is a photosensitive dry film resist. The thickness of the top plate is not less than 10 μm and not more than 50 μm, The thickness of the separator is 5 μm or more and 30 μm or less, and the width of the separator is 5 μm or more and 200 μm or less, The longest width of the hollow portion in a cross section perpendicular to the device mounting surface of the substrate is 60 μm or more and 1000 μm or less, The sealing resin composition comprises: (A) an epoxy resin containing one or more selected from epoxy resins having two epoxy groups in the molecule and epoxy resins having three or more epoxy groups in the molecule; and (B) Inorganic filling materials.

2. The hollow package according to claim 1, characterized in that: The organic material is a negative photosensitive dry film resist.

3. The hollow package as claimed in claim 2, characterized in that: The organic material is the negative photosensitive dry film resist containing a photoacid generator and an epoxy resin.

4. The hollow package according to any one of claims 1 to 3, characterized in that: The (A) contains one or more selected from the group consisting of biphenyl aralkyl epoxy resins, triphenylmethane epoxy resins, biphenyl epoxy resins and bisphenol epoxy resins.

5. A method for manufacturing a hollow package, characterized in that: It includes the following process 1 and process 2, Step 1: a step of providing one or more closed hollow portions by forming a partition plate and a top plate made of at least one organic material on a substrate, Step 2: a step of compression-molding the sealing resin composition at a low pressure of 0.1 MPa or more and less than 5.0 MPa, and sealing the substrate, the spacer, and the top plate with resin, The step 1 includes the step of mounting the element on the substrate in such a manner that at least one element selected from a semiconductor element, a MEMS, and an electronic component is arranged in the hollow portion. The organic material is a photosensitive dry film resist, The sealing resin composition comprises: (A) an epoxy resin containing one or more selected from epoxy resins having two epoxy groups in the molecule and epoxy resins having three or more epoxy groups in the molecule; and (B) Inorganic filling materials.

6. The method for manufacturing a hollow package according to claim 5, wherein: The organic material is a negative photosensitive dry film resist.

7. The method for manufacturing a hollow package according to claim 6, wherein: The organic material is the negative photosensitive dry film resist containing a photoacid generator and an epoxy resin.

8. The method for manufacturing a hollow package according to any one of claims 5 to 7, characterized in that: The (A) contains one or more selected from the group consisting of biphenyl aralkyl epoxy resins, triphenylmethane epoxy resins, biphenyl epoxy resins and bisphenol epoxy resins.

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