Substrate processing device and substrate processing method

Abstract

The present invention provides a substrate processing device and a substrate processing method capable of obtaining a higher anti-etching film removal rate. On a turntable (21) in a housing (12), a processing surface (S1) of a substrate (11) is separated from an upper surface of a fixed plate (17) by a predetermined interval and is fixed in a posture with the processing surface (S1) facing downward. The substrate (11) rotates integrally with the turntable (21). During the rotation of the substrate (11), a gas-liquid two-phase fluid mixed with ozone gas and ozone water flows from a spray portion (16) disposed in the central portion of the fixed plate (17) to a flow path formed between the processing surface (S1) and the upper surface.

Description

Technical Field

[0001] The present invention relates to a substrate processing device such as a semiconductor wafer and a substrate processing method. Background Art

[0002] Generally, in the semiconductor wafer process, photosensitive resin or resist is widely used as a mask for etching or ion implantation to form a device structure. That is, after etching or ion implantation using the resist formed on the processing surface of the substrate as a mask, the resist is removed from the processing surface of the substrate.

[0003] As a method for removing the resist film, a method using a mixed solution of sulfuric acid and hydrogen peroxide (sulfuric acid hydrogen peroxide mixed solution) is widely used. In addition, a method using ozone (O3) water having little impact on the environment has been proposed (see Patent Document 1).

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. WO2010 / 140581

[0007] Patent Document 2: Japanese Patent Application Publication No. 2009-218548 Summary of the invention

[0008] Problems to be solved by the invention

[0009] The method of removing the resist film using ozone (O 3 ) water has little impact on the environment, but has a problem of low removal rate of the resist film and prolonged processing time for one substrate.

[0010] The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of achieving a high resist film removal rate.

[0011] Technical means to solve problems

[0012] The substrate processing device of the present invention includes: a rotating mechanism part, which is used to hold the substrate horizontally and rotate the held substrate around a vertical axis; a fixed plate, which is fixed at a position opposite to a processing surface of the substrate held by the rotating mechanism part at a distance on one surface of the fixed plate, and a flow path is formed between the fixed plate and the processing surface; and a spray part, which is arranged at a position opposite to the central part of the substrate, and supplies ozone gas and ozone water to the flow path while the substrate is rotated by the action of the rotating mechanism part, so that a gas-liquid two-phase fluid obtained by mixing the ozone gas and the ozone water flows in the flow path.

[0013] The substrate processing method of the present invention comprises: a rotation process, in which a processing surface of a substrate maintained horizontally is arranged relative to a surface of a fixed plate with a gap therebetween and the substrate is rotated around a vertical axis in a state in which a flow path is formed between the processing surface and the surface; and a gas-liquid two-phase fluid supply process, in which during the rotation process, ozone gas and ozone water are supplied to the flow path from a position relative to the central portion of the substrate, so that a gas-liquid two-phase fluid obtained by mixing ozone gas and ozone water flows in the flow path.

[0014] Effects of the Invention

[0015] According to the present invention, the processing surface of the substrate is spaced apart from and opposed to one surface of the fixed plate, a flow path is formed between the processing surface and one surface of the fixed plate, and during the rotation of the substrate, a gas-liquid two-phase fluid mixed with ozone gas and ozone water is made to flow through the flow path, thereby achieving a higher removal rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a cross-sectional view showing the structure of a substrate processing apparatus.

[0017] Figure 2 It is a cross-sectional view showing the structure of a mixer and a spouting portion.

[0018] Figure 3 It is an explanatory diagram showing an example of arrangement of the ejection holes.

[0019] Figure 4 It is an explanatory diagram showing a gas-liquid two-phase fluid in a flow path.

[0020] Figure 5 It is an explanatory diagram showing another example of the gas-liquid two-phase fluid in the flow path.

[0021] Figure 6 1 is a flowchart showing the steps of removing the resist film.

[0022] Figure 7 It is a graph showing the removal rate of the resist film using the gas-liquid two-phase fluid and the removal rate of the resist film using ozone water.

[0023] Figure 8 This is a cross-sectional view showing an example in which the mixer is a static mixer. DETAILED DESCRIPTION

[0024] Figure 1In the figure, the substrate processing device 10 is a device for removing the anti-etching film (not shown) formed on the substrate 11 by using a gas-liquid two-phase fluid of ozone gas and ozone water. The substrate 11 is, for example, a semiconductor substrate such as a silicon wafer. In this example, one surface of the substrate 11 on which various semiconductor elements and circuits are formed is a processing surface S1 to be processed, and the substrate processing device 10 is used to remove the anti-etching film formed on the processing surface S1. The substrate processing device 10 of this example performs the process of removing the anti-etching film in a state in which the processing surface S1 is facing downward, but the process of removing the anti-etching film can also be performed in a state in which the processing surface S1 is facing upward.

[0025] The substrate processing apparatus 10 includes a housing 12, a rotating mechanism 14, a loading mechanism 15, a discharge unit 16, a fixing plate 17, a supply unit 18, a halogen lamp heater 19, and a discharge unit 20. Each unit of the substrate processing apparatus 10 is centrally controlled by a control unit (not shown).

[0026] The housing 12 is a cylindrical shape with a bottom, and an upper opening 12a having a circular opening is provided at the upper portion. The fixing plate 17, the turntable 21 described later, etc. are accommodated in the housing 12, and the substrate 11 is also accommodated in the housing 12. The upper opening 12a is formed in a shape having a diameter larger than the substrate 11, and the substrate 11 is taken out of the housing 12 or placed in the housing 12 through the upper opening 12a. In addition, as described later, in this example, the upper opening 12a is an inlet for introducing external air into the housing 12.

[0027] The rotating mechanism 14 is a device for rotating the substrate 11 held horizontally around a vertical axis, and in this example, it is composed of a turntable 21, a drive shaft 22, an electric motor 23, a substrate holding portion 24, etc. The turntable 21 is disc-shaped and is accommodated in the housing 12. The turntable 21 is fixed to the upper end of the drive shaft 22, and is freely rotatable around the vertical rotation axis Z, and rotates while its upper surface is kept horizontal. The turntable 21 is coaxial with the drive shaft 22. The drive shaft 22 penetrates the bottom surface 12b of the housing 12 in the thickness direction (up and down direction) of the bottom surface 12b of the housing 12, and is supported by a bearing 25 provided at the opening of the bottom surface 12b so as to be freely rotatable. A pulley 26 is fixed to the lower part of the drive shaft 22. A belt 27 is hung between the pulley 26 and the pulley 23a installed on the rotating shaft of the electric motor 23. As a result, when the electric motor 23 is driven, the drive shaft 22 rotates integrally with the turntable 21. The rotation speed of the turntable 21 is adjusted by increasing or decreasing the speed of the electric motor 23 .

[0028] The substrate holding portion 24 for holding the substrate 11 is provided on the turntable 21. The substrate holding portion 24 is composed of a plurality of holding members 24a arranged at predetermined intervals in the circumferential direction on the peripheral edge of the turntable 21. Each holding member 24a rotates integrally with the turntable 21. Figure 1In the figure, only two holding members 24a are depicted, but in reality, for example, six holding members 24a are provided.

[0029] The retaining member 24a, for example, has a step formed at its front end, and the peripheral portion of the substrate 11 is placed on each step of each retaining member 24a. Thus, the substrate 11 is horizontally supported at a predetermined height by the substrate retaining member 24. The substrate 11 supported by the substrate retaining member 24 is supported to be spaced apart upward from the upper surface of the turntable 21. In addition, each retaining member 24a moves in the radial direction of the substrate 11, so that the substrate 11 is clamped by each retaining member 24a. In this way, the substrate 11 is held by the substrate retaining member 24, fixed coaxially with the turntable 21, and rotates integrally with the turntable 21. The structure of the above-mentioned substrate retaining member 24 is an example and is not limited thereto. For example, the substrate retaining member 24 can also be composed of a plurality of pins that abut against the peripheral portion on the processing surface S1 side of the substrate 11 to define the interval between the substrate 11 and the turntable 21, and a plurality of pins that clamp and fix the substrate 11 in the radial direction.

[0030] The drive shaft 22 is provided with a through hole 22a extending vertically therethrough. In addition, a through hole 21a connected to the through hole 22a is formed in the center of the turntable 21. A cylindrical fixed shaft 28 passes through the through hole 21a and the through hole 22a. The fixed shaft 28 is fixed to an external frame together with the housing 12. Therefore, the turntable 21 and the drive shaft 22 rotate around the fixed shaft 28.

[0031] A mixer 29 for supplying a gas-liquid two-phase fluid (hereinafter referred to as a gas-liquid two-phase fluid) is fixed to the upper end of the fixed shaft 28, and a fixed plate 17 is fixed to the mixer 29. A plurality of ejection holes 30 (see FIG. 1 ) forming an ejection portion 16 are formed on the upper surface of the mixer 29. Figure 2 ). In addition, the mixer 29 is connected to the supply portion 18 via the supply pipe portion 31, and the supply pipe portion 31 is composed of supply pipes 31a to 31d passing through the hollow portion 28a of the fixed shaft 28 (see Figure 2 ) structure. In addition, the fixing plate 17 can also be directly fixed to the fixing shaft 28.

[0032] The mixer 29 including the ejection unit 16 and the fixing plate 17 are arranged between the substrate 11 held by the substrate holding unit 24 and the turntable 21. As described later, the fixing plate 17 is fixed to a position where its upper surface is spaced apart from the processing surface S1 of the substrate 11 held by the substrate holding unit 24.

[0033] The loading mechanism 15 takes and places the substrate 11 through the upper opening 12a as described above. The loading mechanism 15 takes out the substrate 11 to be processed from the storage box (not shown) and moves the substrate 11 to a position supported by the substrate holding portion 24. The substrate 11 is placed in the storage box with the processing surface S1 facing upward. Therefore, after taking out the substrate 11 from the storage box, the loading mechanism 15 turns the substrate 11 upside down so that the processing surface S1 faces downward. In addition, after taking out the processed substrate 11 from the housing 12, the loading mechanism 15 turns the substrate 11 upside down so that the processing surface S1 faces upward, and then returns the substrate 11 to the storage box.

[0034] A halogen lamp heater 19 is disposed above the housing 12. The halogen lamp heater 19 is disposed in a posture to radiate infrared rays downward. The halogen lamp heater 19 is moved by a moving mechanism 32, such as Figure 1 As shown in FIG. 1 , the halogen lamp heater 19 moves horizontally between a heating position arranged above the upper opening 12a to heat the substrate 11 and a retreat position retreated from above the upper opening 12a to take the substrate 11 from the upper opening 12a. The halogen lamp heater 19 at the heating position is arranged at a height that forms a small gap with the peripheral edge of the upper opening 12a. Figure 1 In the figure, the gap between the halogen lamp heater 19 at the heating position and the periphery of the upper opening 12a is exaggerated for the convenience of illustration. In addition, in this example, the halogen lamp heater 19 is moved in the horizontal direction to the heating position and the retreat position, but in order not to hinder the placement and removal of the substrate 11, the position away from the upper opening 12a upward can also be used as the retreat position, and the halogen lamp heater 19 can be moved in the vertical direction by the moving mechanism 32.

[0035] When the substrate 11 is processed by the substrate processing device 10, the halogen lamp heater 19 is moved to the heating position by the moving mechanism 32. The halogen lamp heater 19 located at the heating position heats the substrate 11 by irradiating infrared rays to the back side S2 (the surface opposite to the processing surface S1) of the substrate 11 located directly below the halogen lamp heater 18 through the upper opening 12a. The halogen lamp heater 19 turns on the lamp and irradiates infrared rays when the substrate 11 is processed by the gas-liquid two-phase fluid. Since there is no obstacle between the halogen lamp heater 19 and the back side S2, the substrate 11 can be efficiently heated. By heating the substrate 11, the oxidative decomposition of the anti-etching film based on the gas-liquid two-phase fluid is promoted.

[0036] In addition, in this example, the halogen lamp heater 19 is used as the heater, but various other heaters may be used. In addition, if the halogen lamp heater 19 can be arranged upward from the upper opening 12a with a sufficient interval, the moving mechanism 32 may be omitted and the position of the halogen lamp heater 19 may be fixed.

[0037] The guide cylinder 34 is arranged in the housing 12. The guide cylinder 34 in this example is a cylindrical shape whose upper part is a conical shape whose diameter gradually decreases upward. The guide cylinder 34 is fixed to the housing 12, for example, and its axis is adjusted to be consistent with the rotation center of the turntable 21. In addition, the lower end of the guide cylinder 34 reaches the bottom surface 12b of the housing 12. The turntable 21 is arranged in the upper opening 34a of the guide cylinder 34. The inner diameter of the opening 34a is slightly larger than the outer diameter of the turntable 21, so that the gap between the turntable 21 and the guide cylinder 34 becomes smaller. A discharge path is formed between the guide cylinder 34 and the housing 12. In addition, by providing the guide cylinder 34, the lifting of particles caused by the rotation of the turntable 21 is prevented, the adhesion of particles to the substrate 11 is suppressed, and the processing liquid and its vaporized products are prevented from flowing to the mechanism parts such as the drive shaft 22 and the bearing 25.

[0038] The discharge portion 20 is composed of an upper opening 12a as the inlet, a discharge port 37 formed on the bottom surface 12b of the housing 12, a suction device 38, and the like. As the suction device 38, for example, a pump is used, which is connected to the discharge port 37 via a pipe 39. The discharge portion 20 generates a pressure difference that makes the pressure of the discharge port 37 smaller than that between the substrate 11 and the fixed plate 17 and smaller than that of the upper opening 12a by driving the suction device 38. Thus, various gases, processing liquids and their droplets flowing out from between the substrate 11 and the fixed plate 17, and foreign matter such as particles generated by the processing are efficiently guided to the discharge port 37 and discharged to the outside of the housing 12. A separation mechanism is provided on the suction device 38 to separate and discharge the gas and liquid sucked from the discharge port 37.

[0039] In addition, by utilizing the pressure difference, external air is sucked into the housing 12 from the upper opening 12a, thereby forming an air flow ( Figure 1 As a result, ozone gas, processing liquid, vaporized product of processing liquid, particles and other foreign matters are prevented from leaking to the outside of the housing 12 through the upper opening 12a, and various gases, processing liquid, particles and other foreign matters flowing out from between the substrate 11 and the fixing plate 17 are effectively guided to the exhaust port 37 and discharged to the outside of the housing 12.

[0040] From the viewpoint of guiding the gas, liquid, particles, etc. flowing out from between the substrate 11 and the fixing plate 17 to the discharge port 37 by using the airflow flowing from top to bottom, the inlet constituting the discharge portion 20 may be provided at a position higher than the processing surface S1 of the substrate 11 held by the substrate holding portion 24. In addition, from the viewpoint of guiding the gas, liquid, particles, etc. flowing out from between the substrate 11 and the fixing plate 17 to the discharge port 37, the discharge port 37 may be provided at a position lower than the upper surface of the fixing plate 17. In addition, considering the ozone water flowing onto the turntable 21, it is preferable to provide the discharge port 37 at a position lower than the upper surface of the turntable.

[0041] Therefore, for example, in the case of adopting a structure in which the upper opening 12a is airtightly blocked during processing, one or more openings are provided as inlets on the side of the housing 12 at a position higher than the processing surface S1 of the substrate 11 held by the substrate holding portion 24. Alternatively, a structure may be adopted in which external air is introduced into the housing 12 from an opening at one end of a tube penetrating the housing 12. In this case, the opening at one end of the tube may be located at a position higher than the processing surface S1 of the substrate 11 held by the substrate holding portion 24. Furthermore, from the viewpoint of guiding the gas, liquid, particles, etc. flowing out from between the substrate 11 and the fixing plate 17 to the exhaust port 37, for example, the exhaust port 37 may be provided at a position on the side of the housing 12 that is lower than the upper surface of the fixing plate 17 (or the turntable 21).

[0042] When the processing surface S1 of the substrate 11 is held facing upward for processing, the fixing plate 17 is disposed above the processing surface S1 of the substrate 11. In this case, the inlet constituting the discharge portion 20 is disposed at a position higher than the lower surface of the fixing plate 17, and the discharge port 37 is disposed at a position lower than the processing surface S1 of the held substrate 11.

[0043] When the upper opening 12 a is hermetically closed, the upper opening 12 a may be closed with, for example, quartz glass having a high infrared transmittance, so that the substrate 11 can be heated from the outside of the housing 12 using a halogen lamp heater 19 or the like.

[0044] Figure 2 In the embodiment, the mixer 29 is formed into a shape (e.g., a cylindrical shape) having a hollow portion 29a formed therein. As described above, the mixer 29 has a plurality of ejection holes 30 constituting the ejection portion 16 formed on the upper surface. Each ejection hole 30 is formed as a hole that penetrates the upper surface of the mixer 29 in the thickness direction. Figure 3 As shown in the example of FIG. 2 , the ejection holes 30 on the upper surface of the mixer 29 are arranged so that the gas-liquid two-phase fluid flows uniformly on the processing surface S1 of the substrate 11 .

[0045] The fixed plate 17 is a disk-shaped plate having a diameter slightly smaller than that of the substrate 11, and is arranged on the inner circumference of the holder 24a. The diameter of the fixed plate 17 can be appropriately changed according to the structure of the substrate holding portion 24 for holding the substrate 11, but is preferably the same size as the substrate 11 or larger than the substrate 11. A through hole 17a is formed in the central portion of the fixed plate 17. By fitting and fixing the mixer 29 in the through hole 17a, the fixed plate 17 is coaxially fixed to the fixed shaft 28 with the turntable 21. In addition, by fixing the fixed plate 17 and the mixer 29 in this way, the ejection portion 16 is arranged in the central portion of the fixed plate 17 arranged opposite to the central portion of the substrate 11. In addition, in this example, the mixer 29 and the fixed plate 17 are fixed in such a manner that the upper surface of the mixer 29 is at the same height as the upper surface S3 of the fixed plate 17. The upper surface S3 of the fixed plate 17 is flat.

[0046] In the vertical direction, the upper surface S3 of the fixed plate 17 and the processing surface S1 of the substrate 11 held by each retaining member 24a are arranged relative to each other with a gap D between them. As a result, a flow path 41 is formed between the upper surface S3 and the processing surface S1 for the gas-liquid two-phase fluid of ozone gas and ozone water to flow. The gap D is the height of the flow path 41, and the gap D can be adjusted, for example, by increasing or decreasing the position of the processing surface S1 of the substrate 11 supported by each retaining member 24a, that is, the height of the step portion of the retaining member 24a. The gap D is set to about 1 mm, for example. The gap D is preferably in the range of 0.5 mm to 3 mm, and more preferably in the range of 1 mm to 2 mm. If the gap D is greater than 0.5 mm, it is easy to process while avoiding contact between the substrate 11 and the fixed plate 17. If it is less than 3 mm, it is easy to obtain the required flow pattern of the gas-liquid two-phase fluid described later in the flow path 41. If it is 1 mm or more, the risk of the substrate 11 and the fixing plate 17 coming into contact can be significantly reduced, and if it is 2 mm or less, it is easy to form a high-speed flow of a desired flow pattern with a small amount of ozone water.

[0047] One end of the supply pipes 31a to 31d is connected to the lower part of the hollow part 29a of the mixer 29, respectively. The other end of the supply pipes 31a to 31d is connected to the supply part 18. The supply part 18 includes an ozone gas supply part 18a, an ozone water supply part 18b, a pure water supply part 18c, and a chemical solution supply part 18d. The ozone gas supply part 18a supplies ozone gas to the mixer 29 via the supply pipe 31a, and the ozone water supply part 18b supplies ozone water obtained by dissolving ozone in pure water to the mixer 29 via the supply pipe 31b. The supply of these ozone gas and ozone water is performed simultaneously. In addition, the pure water supply part 18c supplies pure water to the mixer 29 via the supply pipe 31c, and the chemical solution supply part 18d supplies a chemical solution to the mixer 29 via the supply pipe 31d. The chemical solution is a substance used to remove foreign matter such as particles on the treatment surface S1, for example, a mixed aqueous solution SC1 (StandardClean 1) of hydrogen peroxide and ammonia is used.

[0048] An adding section may also be provided for adding additives to the ozone water from the ozone water supply section 18b. Examples of additives added to the ozone water include ammonia (NH4OH), hydrogen peroxide (H2O2), isopropyl alcohol (IPA), and combinations thereof, which help increase hydroxyl (OH) radicals and further improve the removal rate of the resist film.

[0049] The mixer 29 mixes the supplied ozone gas and ozone water in the hollow portion 29a to generate a gas-liquid two-phase fluid. The gas-liquid two-phase fluid generated in the mixer 29 is ejected from each ejection hole 30 into the flow path 41. In addition, each ejection hole 30 ejects pure water into the flow path 41 by supplying pure water to the mixer 29, and ejects the chemical solution into the flow path 41 by supplying chemical solution to the mixer 29. The gas-liquid two-phase fluid, pure water, and chemical solution supplied from the ejection portion 16 flow toward the periphery while diffusing in the circumferential direction of the substrate 11.

[0050] In the substrate processing device 10, as described above, the gas-liquid two-phase fluid is caused to flow in the flow path 41, and each portion of the processing surface S1 of the substrate 11 is alternately exposed to the ozone gas and the ozone water, thereby obtaining a higher resist film removal rate than when only the ozone water is used. Therefore, the gas-liquid two-phase fluid in the flow path 41 flows as an intermittent flow in which the ozone gas (gas phase) and the ozone water (liquid phase) alternately flow on the processing surface S1 of the substrate 11. Figure 4 As shown in FIG. 1 , the flow of the gas-liquid two-phase fluid in the flow path 41 formed by the processing surface S1 of the substrate 11 and the upper surface S3 of the fixing plate 17 is formed in a state where large bubbles 46 of ozone gas and liquid portions 47 of ozone water flow alternately at least in the upper portion of the flow path 41. As an example of such a flow pattern of the gas-liquid two-phase fluid, a slug flow can be cited. In addition, as Figure 5 As shown, the flow of the gas-liquid two-phase fluid may also be an intermittent flow in which large bubbles 48 and liquid portions 49 diffuse over the entire height of the flow path 41 flow alternately. In order to form the gas-liquid two-phase fluid as described above, the ratio of the ozone gas flow rate and the ozone water flow rate and the total flow rate are adjusted according to the height (interval D) of the flow path 41.

[0051] Next, the function of the above structure will be described. In addition, the steps described below are only examples and are not intended to limit the processing steps. The suction device 38 is always driven and is in a state of suctioning the inside of the housing 12. The halogen lamp heater 19 is moved to the retreat position by the moving mechanism 32. Figure 6 As shown, the substrate 11 to be processed is taken out from the box by the loading mechanism 15 (step ST1). The substrate 11 is accommodated in the box with the processing surface S1 facing upward, so the loading mechanism 15 turns the taken-out substrate 11 180 degrees so that the processing surface S1 faces downward (step ST2).

[0052] The inverted substrate 11 is moved to the turntable 21 in the housing 12 through the upper opening 12a by the loading mechanism 15, and the periphery of the substrate 11 is placed on the step portion of each holding member 24a. After the loading mechanism 15 releases the substrate 11, each holding member 24a is actuated, and the substrate 11 is held by each holding member 24a (step ST3). Thus, the substrate 11 is fixed to the turntable 21 in a manner that the processing surface S1 faces downward and is spaced apart from the upper surface S3 of the fixing plate 17.

[0053] After the substrate 11 is fixed, the halogen lamp heater 19 is moved to the heating position by the moving mechanism 32. Thereafter, the electric motor 23 is driven, and the turntable 21 starts to rotate integrally with the substrate 11 (step ST4).

[0054] After the turntable 21 starts to rotate, the ozone gas supply unit 18a starts to supply ozone gas, and at the same time, the ozone water supply unit 18b starts to supply ozone water (step ST5). At this time, the ozone water is preheated to about 70°C by the ozone water supply unit 18b before supplying, for example. The ozone concentration in the ozone water is, for example, in the range of more than 100 ppm and less than 500 ppm, the supply amount is, for example, in the range of more than 2 L (liter) / minute and less than 20 L / minute, and the flow rate of the ozone gas is, for example, adjusted to less than 20 L / minute. In addition, the ranges of the ozone concentration in the above-mentioned ozone water, the supply amount of ozone water and ozone gas are only examples and are not limited to these ranges.

[0055] Furthermore, the halogen lamp heater 19 is turned on (step ST6). By turning on the halogen lamp heater 19, the substrate 11 is heated from the back surface S2 side to a predetermined temperature. At this time, the temperature of the substrate 11 is, for example, in the range of 30°C to 100°C.

[0056] The ozone gas from the ozone gas supply unit 18a and the ozone water from the ozone water supply unit 18b are supplied to the mixer 29 via the supply pipes 31a and 31b. Thus, the supplied ozone gas and ozone water are mixed in the hollow portion 29a of the mixer 29, and supplied as a gas-liquid two-phase fluid from each ejection hole 30 to the flow path 41 formed by the processing surface S1 of the substrate 11 and the upper surface S3 of the fixing plate 17. The gas-liquid two-phase fluid flows in the flow path 41, and as the substrate 11 rotates, the gas-liquid two-phase fluid flows toward the periphery of the substrate 11 while diffusing in the circumferential direction.

[0057] As described above, by making the gas-liquid two-phase fluid flow in the flow path 41, the gas-liquid two-phase fluid is supplied to the entire surface of the processing surface S1, and each part of the processing surface S1 is alternately and repeatedly exposed to the ozone gas and the ozone water. As a result, the anti-corrosion film is oxidatively decomposed and gradually removed. Since turbulence is generated near the surface of the substrate 11, the boundary layer becomes thinner, and the amount of ozone reaching the substrate 11 increases, it is estimated that the removal rate becomes higher. In addition, since the substrate 11 is heated by the halogen lamp heater 19, the oxidative decomposition of the anti-corrosion film based on ozone is promoted.

[0058] When the gas-liquid two-phase fluid reaches the periphery of the substrate 11, it is guided to the discharge port 37 due to the pressure difference and discharged. Therefore, the ozone gas and ozone water as the gas-liquid two-phase fluid will not leak from the upper opening 12a to the outside of the housing 12. In addition, the particles separated from the processing surface S1 are transported to the outside of the substrate 11 together with the gas-liquid two-phase fluid, and discharged from the discharge port 37 by the airflow from the upper opening 12a.

[0059] When the predetermined processing time has passed since the start of supply of the gas-liquid two-phase fluid (step ST7: Yes), the halogen lamp heater 19 is turned off (step ST8), and the supply of ozone gas and ozone water is stopped (step ST9). The predetermined processing time is set in advance to a time that can completely remove the resist film.

[0060] Next, the first pure water rinse process is performed (step ST10). Pure water is supplied from the pure water supply unit 18c to the mixer 29 via the supply pipe 31c, and the pure water is supplied to the flow path 41 from each ejection hole 30. Due to the rotation of the substrate 11, the pure water diffuses circumferentially on the processing surface S1 and flows toward the periphery of the substrate 11. In this way, pure water is supplied to the entire surface of the processing surface S1 and cleaned. The supply of pure water is stopped after a predetermined time. In addition, the first pure water rinse process can also be omitted.

[0061] Next, a chemical treatment is performed to remove the particles (step ST11). During the chemical treatment, the chemical solution from the chemical solution supply unit 18d is supplied to the flow path 41 via the supply pipe 31d, the mixer 29 and the ejection hole 30. Thus, the chemical solution is supplied to the processing surface S1, and the chemical solution diffuses circumferentially on the processing surface S1 while flowing toward the periphery of the substrate 11 due to the rotation of the substrate 11. In this way, the chemical solution is supplied to the entire surface of the processing surface S1, and the particles on the processing surface S1 are removed. The chemical solution is heated according to its type. For example, in the case where the chemical solution is SC1, SC1 is supplied after being heated to 40°C to 80°C, and the supply of the chemical solution is stopped at a processing time of 30 seconds to 60 seconds.

[0062] After the chemical treatment, the second pure water rinse process is performed (step ST12). As in the first pure water rinse process, pure water is supplied to the flow path 41 and the entire surface of the treatment surface S1 is cleaned. After a predetermined time, the supply of pure water is stopped.

[0063] After the pure water rinse process, the rotation speed of the turntable 21, that is, the rotation speed of the substrate 11, is increased to centrifugally dry the substrate 11 (step ST13). Thereby, the pure water attached to both surfaces of the substrate 11 is scattered by the centrifugal force, and the substrate 11 is dried.

[0064] In addition, during the chemical treatment, pure water rinsing treatment, and centrifugal drying, the chemical solution and pure water flowing out from the substrate 11 and the turntable 21, and the chemical solution and pure water adhering to the inner wall of the housing 12 and flowing down are attracted to the discharge port 37 and discharged. In addition, even if fine droplets of the chemical solution and pure water are generated, the droplets are guided to the discharge port 37 by the airflow from the upper opening 12a. Therefore, the droplets of the chemical solution and pure water do not leak out from the upper opening 12a.

[0065] After the centrifugal drying is completed, the electric motor 23 is stopped, and the rotation of the turntable 21 and the substrate 11 is stopped (step ST14). After the substrate 11 is released from the holding member 24a (step ST15), the substrate 11 is taken out through the upper opening 12a by the loading mechanism 15 (step ST16). The loading mechanism 15 turns the substrate 11 upside down so that the processing surface S1 faces upward (step ST17), and the substrate 11 is accommodated in the box (step ST18).

[0066] As described above, after the processing of one substrate 11 is completed, a new substrate 11 is processed in the same steps. As described above, the resist film is removed using a gas-liquid two-phase fluid, and the removal rate is high, so one substrate 11 can be processed in a short time.

[0067] The resist film removal rate measurement result (symbol G1) when the resist film is removed in the substrate processing apparatus 10 configured as described above is shown in FIG. Figure 7 In addition, Figure 7 , the measurement result of the removal rate of the resist film when using ozone water is also shown (symbol G2). In addition, the structure of the substrate processing device when removing the resist film with ozone water is the same as that of the substrate processing device 10, and only ozone water is flowed in the flow path 41 instead of the gas-liquid two-phase fluid. According to this result, it can be seen that by using the gas-liquid two-phase fluid to remove the resist film, a higher removal rate can be obtained.

[0068] In the above, a mixer with a hollow interior is used to mix ozone gas and ozone water, but the structure of the mixer is not limited thereto. For example, Figure 8 The mixer 51 shown in the figure has elements 52 and 53 for mixing and stirring the ozone gas and ozone water supplied via the supply pipes 31a and 31b in its hollow part 51a, and functions as a static mixer. Alternatively, the ozone gas and ozone water may be directly supplied to the flow path from the center of the fixed plate, and the ozone gas and ozone water may be mixed in the flow path.

[0069] In the above-mentioned example, a guide cylinder is provided in the housing, but a plurality of guide cylinders with different upper opening heights can also be configured to be arranged to make the rotation center of the turntable consistent with each axis and make the turntable lift in the mode that can rotate in each opening on the top of each guide cylinder. According to this structure, a plurality of paths of airflow are formed between the outermost guide cylinder and the housing and between the guide cylinder and the guide cylinder. Thus, according to the type of the gas or treatment liquid supplied, the height of the turntable is changed to process, thus, the flow path of the gas or treatment liquid flowing out between the turntable and the substrate can be changed, and they can be discharged to the outside of the housing respectively. In addition, about such structure, it is recorded in Japanese Patent Laid-Open 2012-209559 Gazette and Japanese Patent Laid-Open 2007-180268 Gazette.

[0070] Description of Reference Numerals

[0071] 10: Substrate processing equipment

[0072] 11: Substrate

[0073] 12: Shell

[0074] 14: Rotating mechanism

[0075] 16: Ejection

[0076] 17: Fixed plate

[0077] 18: Supply Department

[0078] 21: Turntable

[0079] 24: Substrate holding part

Claims

1. A substrate processing device, characterized in that: include: A rotating mechanism portion that holds the substrate horizontally with a processed surface of the substrate, which is a surface on which a circuit is formed, facing downward, and rotates the held substrate around a vertical axis; a fixing plate fixed at a position where one surface of the fixing plate is opposed to the processing surface of the substrate held by the rotating mechanism at a distance of 0.5 mm to 3 mm, and a flow path is formed between the fixing plate and the processing surface; and The mixer is fixed to the central part of the fixed plate, has a hollow portion inside, and has a spray portion consisting of a plurality of spray holes formed on the upper surface, and mixes ozone gas and ozone water in the hollow portion to generate a gas-liquid two-phase fluid. wherein the ozone gas is supplied to the mixer at a flow rate of 20 L / min or less, and the ozone water is supplied to the mixer at a flow rate of 2 L / min or more and 20 L / min or less, The ejection portion is arranged at a position opposite to the central portion of the substrate, and while the substrate is rotated by the action of the rotating mechanism portion, the gas-liquid two-phase fluid is caused to flow in the flow path in the form of a slug flow or an intermittent flow in which large bubbles diffused throughout the entire height range of the flow path and the liquid portion flow alternately.

2. The substrate processing apparatus according to claim 1, wherein: The one surface of the fixing plate is flat, and an upper surface of the mixer is at the same height as the one surface of the fixing plate.

3. The substrate processing apparatus according to claim 1, wherein: include: The heater is used to heat the substrate when the gas-liquid two-phase fluid flows in the flow path.

4. The substrate processing apparatus according to claim 1, wherein: The hollow portion is provided with an element for mixing and stirring the ozone gas and the ozone water.

5. A substrate processing method, characterized in that: have: a rotating step of rotating the substrate around a vertical axis while keeping the processed surface of the substrate held horizontally and the surface on which the circuit is formed facing downward and making the processed surface face one surface of a fixed plate with a gap of 0.5 mm to 3 mm, and forming a flow path between the processed surface and the one surface; and A gas-liquid two-phase fluid supplying step, during the rotation step, ozone gas is supplied at a flow rate of less than 20 L / min and ozone water is supplied at a flow rate of more than 2 L / min and less than 20 L / min to the flow path from a position opposite to the central portion of the substrate, so that the ozone gas and the ozone water are mixed to generate a gas-liquid two-phase fluid, and the gas-liquid two-phase fluid is made to flow in the flow path from a plurality of ejection holes in the form of a slug flow or an intermittent flow in which large bubbles diffused throughout the entire height range of the flow path and the liquid portion flow alternately.

6. The substrate processing method according to claim 5, characterized in that: have: The heating step heats the substrate during the gas-liquid two-phase fluid supplying step.

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