Display device and method of manufacturing the same

Abstract

A display device and a method for manufacturing the same are provided. The display device includes: a first substrate; a first light-emitting device, a second light-emitting device, and a third light-emitting device disposed on the first substrate, each of the first to third light-emitting devices including a first light-emitting layer; a second substrate disposed on the first substrate, the first to third light-emitting devices being between the first and second substrates, the second substrate including a first through hole, a second through hole, and a third through hole respectively overlapping the first to third light-emitting devices; a reflective layer on an inner surface of each of the first to third through holes; a first color filter layer in the first through hole; a second color filter layer and a second quantum dot layer in the second through hole; and a third color filter layer and a third quantum dot layer in the third through hole.

Description

[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2020-0030758, filed on March 12, 2020, which is hereby incorporated by reference for all purposes as if fully set forth herein. Technical Field

[0002] Exemplary embodiments of the invention relate generally to a display device and a method of manufacturing the same, and more particularly, to a display device and a method of manufacturing the same for reducing a defect rate of the display device and an amount of consumed material during manufacturing. Background Art

[0003] A display device includes multiple pixels. These pixels can emit light of different colors to achieve a full-color display. To this end, at least some of the pixels in the display device include a color conversion unit. Thus, first-color light generated by the light-emitting portions of some pixels is converted into second-color light upon passing through the corresponding color conversion unit, and the second-color light is then emitted externally.

[0004] The above information disclosed in this Background section is only for understanding the background of the inventive concept and therefore it may contain information that does not constitute the prior art. Summary of the Invention

[0005] The applicant has discovered that during the manufacturing process of forming the color conversion cell, an excessive amount of material for forming the color conversion cell of the display device may be used and result in a high defect rate of the display device.

[0006] Display devices having color filters and color conversion cells constructed in accordance with the principles of the invention and exemplary embodiments, as well as methods for manufacturing the same, can ensure low defect rates and reduce the amount of material consumed during the manufacturing process. These benefits can be achieved, for example, by forming the color filters and color conversion cells in through-holes of a separate upper substrate, which is then bonded to a lower substrate containing a display panel and light-emitting elements.

[0007] Additional features of the inventive concepts will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the inventive concepts.

[0008] According to one aspect of the invention, a display device includes: a first substrate; a first light-emitting device, a second light-emitting device, and a third light-emitting device, which are arranged on the first substrate, each of the first to third light-emitting devices including a first light-emitting layer; a second substrate, which is arranged on the first substrate, the first to third light-emitting devices between the first substrate and the second substrate, the second substrate including a first through hole, a second through hole, and a third through hole respectively overlapping the first to third light-emitting devices; a reflective layer on an inner surface of each of the first to third through holes; a first color filter layer in the first through hole; a second color filter layer and a second quantum dot layer in the second through hole; and a third color filter layer and a third quantum dot layer in the third through hole.

[0009] The first to third light-emitting devices may include: a first pixel electrode, a second pixel electrode and a third pixel electrode; and a counter electrode overlapping the first to third pixel electrodes, wherein the first light-emitting layer is arranged throughout the first to third pixel electrodes and is placed between the first to third pixel electrodes and the counter electrode.

[0010] The first light emitting layer may be configured to emit light of a first wavelength band, the second quantum dot layer may be configured to convert light of the first wavelength band into light of a second wavelength band, and the third quantum dot layer may be configured to convert light of the first wavelength band into light of a third wavelength band.

[0011] The reflective layer may cover a portion of the first surface of the second substrate outside the first to third through holes, the first surface of the second substrate facing the first substrate.

[0012] The second quantum dot layer may be between the second color filter layer and the second light emitting device, and the third quantum dot layer may be between the third color filter layer and the third light emitting device.

[0013] The first substrate may be a lower substrate, the second substrate may be an upper substrate, and the upper surfaces of the first color filter layer, the second color filter layer, and the third color filter layer may form a substantially continuous surface with the upper surface of the upper substrate, the upper surface of the upper substrate facing away from the lower substrate.

[0014] The display device may further include a first protective layer between the second color filter layer and the second quantum dot layer and between the third color filter layer and the third quantum dot layer.

[0015] The first protective layer may be integrally formed as a single entity over the entire surface of the second substrate.

[0016] The display apparatus may further include a light-transmitting layer in the first through hole, the light-transmitting layer being interposed between the first color filter layer and the first light-emitting device.

[0017] The first protection layer may be between the first color filter layer and the light transmission layer.

[0018] The display apparatus may further include a second protective layer between the second quantum dot layer and the second light emitting device and between the third quantum dot layer and the third light emitting device.

[0019] The second protective layer may be integrally formed as a single entity over substantially the entire surface of the second substrate.

[0020] The second protective layer may be in contact with the first protective layer on a portion of a lower surface of the second substrate outside the first to third through holes, the lower surface facing the first substrate.

[0021] An inner surface of each of the first to third through holes may be inclined with respect to a first surface of the second substrate, the first surface facing the first substrate.

[0022] A first cross-sectional area of ​​each of the first to third through holes taken along a first plane substantially parallel to the first surface of the second substrate may be smaller than a second cross-sectional area of ​​each of the first to third through holes taken along a second plane substantially parallel to the first surface of the second substrate, the second plane being closer to the first substrate than the first plane, and the first surface facing the first substrate.

[0023] The second substrate may include an opaque material.

[0024] The second substrate may include a black pigment.

[0025] The second substrate may be opaque.

[0026] According to another aspect of the invention, a method for manufacturing a display device includes the following steps: forming a layer of a first substrate on a carrier substrate; forming a first substrate by forming a first through hole, a second through hole and a third through hole in the layer of the first substrate; forming a reflective layer on the first substrate; removing the reflective layer on the carrier substrate in the first through hole to the third through hole; forming a first color filter layer in the first through hole; forming a second color filter layer in the second through hole; forming a third color filter layer in the third through hole; forming a first quantum dot layer on the second color filter layer in the second through hole; and forming a second quantum dot layer on the third color filter layer in the third through hole.

[0027] The method may further include the following steps: forming a first light-emitting device, a second light-emitting device, and a third light-emitting device on a second substrate, the first light-emitting device to the third light-emitting device including a first light-emitting layer; and aligning and combining the first substrate and the second substrate with each other, with the first light-emitting device to the third light-emitting device between the first substrate and the second substrate, wherein the first through holes to the third through holes may be overlapped with the first light-emitting device to the third light-emitting device, respectively.

[0028] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The accompanying drawings illustrate exemplary embodiments of the invention and together with the description serve to explain the inventive concept. The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification.

[0030] Figure 1 is a cross-sectional view of an exemplary embodiment of a display device constructed according to the principles of the invention.

[0031] Figures 2A to 9 It shows the manufacturing Figure 1 A cross-sectional view or plan view of a process of displaying a device.

[0032] Figure 10 is a cross-sectional view of another exemplary embodiment of a display device constructed according to the principles of the invention. DETAILED DESCRIPTION

[0033] In the following description, for the purpose of illustration, many specific details are set forth to provide a thorough understanding of the various exemplary embodiments or implementations of the invention. As used herein, "embodiment" and "implementation" are interchangeable words that are non-limiting examples of devices or methods that employ one or more of the inventive concepts disclosed herein. However, it is apparent that various exemplary embodiments can be practiced without these specific details or with one or more equivalent arrangements. In other cases, well-known structures and devices are shown in block diagram form to avoid unnecessary confusion of various exemplary embodiments. In addition, various exemplary embodiments can be different, but do not have to be exclusive. For example, without departing from the inventive concept, the specific shape, construction and characteristics of an exemplary embodiment can be used or implemented in another exemplary embodiment.

[0034] Unless otherwise stated, the exemplary embodiments shown are to be understood as providing exemplary features of different details of some ways in which the inventive concept can be implemented in practice. Therefore, unless otherwise stated, the features, components, modules, layers, films, panels, regions and / or aspects, etc. (hereinafter, individually or collectively referred to as "elements") of the various embodiments may be further combined, separated, interchanged and / or rearranged without departing from the inventive concept.

[0035] The use of cross hatching and / or shading is generally provided in the accompanying drawings to make the boundaries between adjacent elements clear. Thus, unless otherwise specified, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for the specific material, material properties, size, ratio, commonality between the elements shown and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the accompanying drawings, the size and relative size of the elements may be exaggerated for clarity and / or descriptive purposes. When the exemplary embodiments can be implemented differently, the specific process sequence can be performed in a different order than described. For example, two continuously described processes can be performed substantially simultaneously or in an order opposite to the described order. In addition, the same reference numerals represent the same elements.

[0036] When an element or layer is referred to as being "on" another element or layer, "connected to" or "bound to" another element or layer, the element or layer may be directly on, directly connected to or directly bound to the other element or layer, or there may be an intermediate element or intermediate layer. However, when an element or layer is referred to as being "directly on" another element or layer, "directly connected to" or "directly bound to" another element or layer, there are no intermediate elements or intermediate layers. For this purpose, the term "connected" may refer to a physical connection, an electrical connection and / or a fluid connection with or without an intermediate element. In addition, the D1 axis, the D2 axis and the D3 axis are not limited to the three axes of a rectangular coordinate system (such as the x-axis, the y-axis and the z-axis) and may be interpreted in a broader sense. For example, the D1 axis, the D2 axis and the D3 axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z, such as XYZ, XYY, YZ, and ZZ for example. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0037] Although the terms "first," "second," etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, the first element discussed below may be named the second element without departing from the disclosed teachings.

[0038] For descriptive purposes, spatially relative terms such as "under," "beneath," "beneath," "down," "over," "up," "above," "higher," "side" (e.g., as in "sidewall"), etc., may be used herein to describe the relationship of one element to another(s) element(s) as shown in the accompanying drawings. Spatially relative terms are intended to include different orientations of the device in use, operation, and / or manufacture in addition to the orientations depicted in the accompanying drawings. For example, if the device in the drawings is turned over, an element described as "under" or "beneath" other elements or features would then be positioned "over" the other elements or features. Thus, the exemplary term "under" can include both an above and a below orientation. Furthermore, the device can be positioned otherwise (e.g., rotated 90 degrees or at other orientations), and as such, the spatially relative descriptors used herein should be interpreted accordingly.

[0039] The terms used herein are for the purpose of describing specific embodiments and are not intended to be limiting. As used herein, unless the context clearly indicates otherwise, the singular forms "one", "one (kind / person)" and "said (the)" are also intended to include plural forms. In addition, when using the terms "comprise", "include" and / or their variations in this manual, the term descriptions include the features, integral bodies, steps, operations, elements, components and / or their groups stated, but do not exclude the presence or addition of one or more other features, integral bodies, steps, operations, elements, components and / or their groups. It should also be noted that, as used herein, the terms "substantially", "approximately" and other similar terms are used as approximate terms rather than as terms of degree, and so, they are used to explain the inherent deviations in measured values, calculated values ​​and / or provided values ​​that those of ordinary skill in the art will recognize.

[0040] Various exemplary embodiments are described herein with reference to cross-sectional views and / or exploded views that are schematic diagrams of idealized exemplary embodiments and / or intermediate structures. As such, variations in the shapes of the illustrations due to, for example, manufacturing techniques and / or tolerances are to be expected. Therefore, the exemplary embodiments disclosed herein should not be construed as limited to the specific illustrated shapes of the regions, but rather are to include deviations in shape due to, for example, manufacturing. In this manner, the regions illustrated in the accompanying drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device and, as such, are not necessarily intended to be limiting.

[0041] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure is a part. Terms (such as those defined in common dictionaries) should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and should not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0042] Figure 1 is a cross-sectional view of an exemplary embodiment of a display device constructed according to the principles of the invention. Figure 1 As shown in FIG, the display device includes first to third pixels PX1 to PX3. However, the display device may include more pixels. Figure 1 , the first pixel PX1 to the third pixel PX3 are adjacent to each other, but one or more exemplary embodiments are not limited thereto. For example, other elements such as wiring may be between the first pixel PX1 to the third pixel PX3. Therefore, the first pixel PX1 and the second pixel PX2 may not be adjacent to each other, for example. In addition, Figure 1 , cross sections of the first to third pixels PX1 to PX3 may not be taken along the same direction.

[0043] The display device includes a lower substrate 100. The lower substrate 100 may include glass, metal, polymer resin, etc. When the lower substrate 100 is flexible or bendable, the lower substrate 100 may include a polymer resin, such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, or cellulose acetate propionate. The lower substrate 100 may be modified in various ways. For example, the lower substrate 100 may have a multilayer structure including at least two layers and a barrier layer between the at least two layers. Each of the at least two layers may include a polymer resin, and the barrier layer may include an inorganic material, such as silicon oxide, silicon nitride, silicon oxynitride, etc.

[0044] The first pixel electrode 311, the second pixel electrode 321, and the third pixel electrode 331 are provided on the lower substrate 100. For example, a plurality of display devices are provided on the lower substrate 100. In addition to the display devices, the first to third thin film transistors 210, 220, and 230 electrically connected to the display devices may be on the lower substrate 100. Figure 1In the embodiment of the present invention, the display device is in the form of an organic light-emitting device (OLED) provided on a lower substrate 100, but any type of light-emitting device suitable for use as a display device in a display panel may be employed in exemplary embodiments of the present invention. The organic light-emitting device OLED is electrically connected to the first to third thin film transistors 210, 220, and 230 via the first to third pixel electrodes 311, 321, and 331.

[0045] exist Figure 1 In the embodiment of the present invention, the first thin film transistor 210 is in the first pixel PX1, the second thin film transistor 220 is in the second pixel PX2, and the third thin film transistor 230 is in the third pixel PX3. Furthermore, the first to third thin film transistors 210 to 230 are each connected to the pixel electrode of the display device in the corresponding pixel. Hereinafter, for ease of description, the first thin film transistor 210 and the display device connected to it will be described. This description can also be applied to the second and third thin film transistors 220 and 230, as well as the display devices connected to them. Specifically, the description of the second semiconductor layer 221, the second gate electrode 223, the second source electrode 225a and the second drain electrode 225b, and the second pixel electrode 321 of the second thin film transistor 220 will be omitted to avoid redundancy. Similarly, the description of the third semiconductor layer 231, the third gate electrode 233, the third source electrode 235a and the third drain electrode 235b, and the third pixel electrode 331 of the third thin film transistor 230 will be omitted to avoid redundancy.

[0046] The first thin film transistor 210 may include a first semiconductor layer 211, a first gate electrode 213, a first source electrode 215a, and a first drain electrode 215b, wherein the first semiconductor layer 211 may include amorphous silicon, polycrystalline silicon, an organic semiconductor material, or an oxide semiconductor material. The first gate electrode 213 may have a layered structure including various conductive materials, such as a Mo layer and an Al layer. Alternatively, the first gate electrode 213 may include TiN x The first source electrode 215a and the first drain electrode 215b may also have various layered structures including various conductive materials, and the layered structures are formed of, for example, a Ti layer, an Al layer, and / or a Cu layer.

[0047] In order to ensure the insulating properties between the first semiconductor layer 211 and the first gate electrode 213, a first gate insulating layer 121 including an inorganic material (such as silicon oxide, silicon nitride and / or silicon oxynitride) may be between the first semiconductor layer 211 and the first gate electrode 213. In addition, a first interlayer insulating layer 131 including an inorganic material (such as silicon oxide, silicon nitride and / or silicon oxynitride) may be on the first gate electrode 213. The first source electrode 215a and the first drain electrode 215b may be on the first interlayer insulating layer 131. The insulating layer including the inorganic material may be formed by a chemical vapor deposition (CVD) method or an atomic layer deposition (ALD) method. This also applies to the exemplary embodiments and modifications thereof to be described later.

[0048] A buffer layer 110 may be provided between the first thin film transistor 210 and the lower substrate 100. The buffer layer 110 may include an inorganic material such as silicon oxide, silicon nitride, and / or silicon oxynitride. The buffer layer 110 may improve the smoothness of the upper surface of the lower substrate 100 or may prevent or reduce the penetration of impurities from the lower substrate 100 into the first semiconductor layer 211 of the first thin film transistor 210.

[0049] In addition, the planarization layer 140 may be on the first thin film transistor 210. For example, when the organic light emitting device OLED is Figure 1 When the planarization layer 140 is on the first thin film transistor 210 as shown in FIG, the planarization layer 140 can planarize the upper portion of the protective layer (not shown) covering the first thin film transistor 210. The planarization layer 140 may include, for example, an organic material such as acryl, benzocyclobutene (BCB), hexamethyldisiloxane (HMDSO), etc. Figure 1 In the embodiment, the planarization layer 140 has a single-layer structure, but various modifications may be made. For example, the planarization layer 140 may have a multi-layer structure.

[0050] The display device may be disposed on the planarization layer 140 of the lower substrate 100. Figure 1 The organic light emitting device OLED shown in FIG can be used as a display device. In the first pixel PX1, the organic light emitting device OLED may include, for example, a first pixel electrode 311, an opposite electrode 305, and an intermediate layer 303 between the first pixel electrode 311 and the opposite electrode 305. For example, the intermediate layer 303 includes an emission layer. Figure 1As shown in FIG, the first pixel electrode 311 is electrically connected to the first thin film transistor 210 by contacting one of the first source electrode 215a and the first drain electrode 215b through an opening formed in the planarization layer 140. The second pixel PX2 includes a second pixel electrode 321, and the third pixel PX3 includes a third pixel electrode 331. Each of the first to third pixel electrodes 311 to 331 includes a light-transmitting conductive layer and a reflective layer, the light-transmitting conductive layer including a conductive oxide material such as ITO, In2O3, IZO, etc., and the reflective layer including a metal such as Al, Ag, etc. For example, the first to third pixel electrodes 311 to 331 can each have a three-layer structure including ITO / Ag / ITO.

[0051] The intermediate layer 303 including the emission layer may be integrally formed as a single entity over the first pixel electrode 311 to the third pixel electrode 331 (above the first pixel electrode 311 to the third pixel electrode 331), and the counter electrode 305 on the intermediate layer 303 may be integrally formed as a single entity over the first pixel electrode 311 to the third pixel electrode 331 (above the first pixel electrode 311 to the third pixel electrode 331). The counter electrode 305 may include a light-transmitting conductive layer including ITO, In2O3, IZO, or the like, and may include a semi-transmitting layer including a metal such as Al, Ag, or the like. For example, the counter electrode 305 may include a semi-transmitting layer including Mg, Ag, or the like.

[0052] The pixel defining layer 150 may be on the planarization layer 140. The pixel defining layer 150 includes an opening corresponding to each of the pixels (eg, an opening exposing at least a central portion of each of the first to third pixel electrodes 311 to 331), thereby defining the pixels. Figure 1 In the example of FIG, the pixel defining layer 150 increases the distance between the edge of each of the first pixel electrode 311 to the third pixel electrode 331 and the counter electrode 305 to prevent arcing from occurring at the edges of the first pixel electrode 311 to the third pixel electrode 331. The pixel defining layer 150 may include, for example, an organic material such as polyimide, hexamethyldisiloxane (HMDSO), or the like.

[0053] The intermediate layer 303 may include a low molecular weight organic material or a polymer material. When the intermediate layer 303 includes a low molecular weight material, the intermediate layer 303 may include a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL) and an electron injection layer (EIL) in a single layer or multilayer structure, and may be obtained by a vacuum deposition method. When the intermediate layer 303 includes a polymer material, the intermediate layer 303 may include an HTL and an EML. Here, the HTL may include PEDOT, and the EML may include a polyphenylenevinylene (PPV) or polyfluorene polymer material. The intermediate layer 303 may be arranged by a screen printing method, an inkjet printing method, a deposition method, a laser induced thermal imaging (LITI) method, etc. However, the intermediate layer 303 is not limited thereto, but may have various structures.

[0054] The intermediate layer 303 may include a layer integrally formed as a single entity over the first pixel electrode 311 to the third pixel electrode 331 (above the first pixel electrode 311 to the third pixel electrode 331) as described above, but alternatively, the intermediate layer 303 may include a layer patterned to correspond to each of the first pixel electrode 311 to the third pixel electrode 331. In either case, the intermediate layer 303 may include a first light-emitting layer. The first light-emitting layer may be integrally formed as a single entity over the first pixel electrode 311 to the third pixel electrode 331 (above the first pixel electrode 311 to the third pixel electrode 331), but alternatively, the first light-emitting layer may be patterned to correspond to each of the first pixel electrode 311 to the third pixel electrode 331. The first light-emitting layer may emit light in a first wavelength band, for example, light in a wavelength band from about 450 nm to about 495 nm.

[0055] The counter electrode 305 is on the intermediate layer 303 to correspond to the first to third pixel electrodes 311 to 331. The counter electrode 305 may be integrally formed as a single body throughout the plurality of organic light emitting devices OLED.

[0056] Because the organic light emitting device OLED is easily damaged by external moisture or oxygen, an encapsulation layer (not shown) may cover the organic light emitting device OLED to protect the organic light emitting device OLED. The encapsulation layer may include a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer.

[0057] The upper substrate 400 is arranged above the lower substrate 100, and the counter electrode 305 can be between the upper substrate 400 and the lower substrate 100. The upper substrate 400 may include a polymer resin. The upper substrate 400 may include, for example, a polymer resin (such as polyethersulfone, polyacrylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyarylate, polyimide, polycarbonate, cellulose acetate propionate, etc.). The upper substrate 400 may be modified in various ways. For example, the upper substrate 400 may have a multilayer structure including at least two layers and a barrier layer between the at least two layers. The at least two layers may include a polymer resin. The barrier layer may include an inorganic material between the at least two layers, such as silicon oxide, silicon nitride, silicon oxynitride, etc. The upper substrate 400 may be flexible or bendable.

[0058] The upper substrate 400 may include first to third through holes 410, 420, and 430, respectively corresponding to the first to third pixel electrodes 311 to 331. The first to third through holes 410 to 430 corresponding to the first to third pixel electrodes 311 to 331 indicate that when viewed from a direction perpendicular to the upper substrate 400 (the Z-axis direction), the first through hole 410 overlaps the first pixel electrode 311, the second through hole 420 overlaps the second pixel electrode 321, and the third through hole 430 overlaps the third pixel electrode 331.

[0059] The inner surface of each of the first through-holes 410 to the third through-holes 430 of the upper substrate 400 is inclined relative to the lower surface 400b of the upper substrate 400. The cross-sectional area of ​​each of the first through-holes 410 to the third through-holes 430 is defined as the cross-sectional area taken along an imaginary plane (XY plane) substantially parallel to the lower surface 400b of the upper substrate 400. The cross-sectional area of ​​each of the first through-holes 410 to the third through-holes 430 decreases in a direction from the lower surface 400b to the upper surface 400a of the upper substrate 400. For example, when a second imaginary plane substantially parallel to the lower surface 400b of the upper substrate 400 is closer to the lower surface 400b of the upper substrate 400 than the first imaginary plane substantially parallel to the lower surface 400b of the upper substrate 400, the first cross-sectional area of ​​each of the first through-holes 410 to the third through-holes 430 taken along the first imaginary plane is smaller than the second cross-sectional area of ​​each of the first through-holes 410 to the third through-holes 430 taken along the second imaginary plane.

[0060] The reflective layer 403 is in each of the first through hole 410 to the third through hole 430. In detail, the reflective layer 403 is on the inner surface of each of the first through hole 410 to the third through hole 430. The reflective layer 403 may include a metal having reflectivity such as Al, Ag, etc. Figure 1, the reflective layer 403 may be located not only in the first to third through holes 410 to 430 but also on the lower surface 400b of the upper substrate 400, the lower surface 400b facing the lower substrate 100. In detail, the reflective layer 403 may cover portions of the lower surface 400b of the upper substrate 400 outside the first to third through holes 410 to 430.

[0061] The first color filter layer 413 is in the first through-hole 410 . In addition, the second color filter layer 423 and the second quantum dot layer 425 are in the second through-hole 420 , and the third color filter layer 433 and the third quantum dot layer 435 are in the third through-hole 430 .

[0062] The first color filter layer 413 may transmit only light having a wavelength in the range of about 450 nm to about 495 nm, the second color filter layer 423 may transmit only light having a wavelength in the range of about 495 nm to about 570 nm, and the third color filter layer 433 may transmit only light having a wavelength in the range of about 630 nm to about 780 nm. The first to third color filter layers 413 to 433 may reduce external light reflection in a display device.

[0063] For example, when external light is incident on the first color filter layer 413, only light of a predetermined wavelength as described above can pass through the first color filter layer 413, while light of other wavelengths is absorbed by the first color filter layer 413. Therefore, of the external light incident on the display device, only light of a predetermined wavelength as described above can pass through the first color filter layer 413, and some of the light passing through the first color filter layer 413 is reflected by the counter electrode 305 or the first pixel electrode 311 below the first color filter layer 413 and emitted to the outside. Therefore, only some of the external light incident on the space where the first pixel PX1 is located can be reflected to the outside, and thus, external light reflection can be reduced. The above description can also be applied to the second color filter layer 423 and the third color filter layer 433.

[0064] The second quantum dot layer 425 can convert the light of the first wavelength band generated by the intermediate layer 303 on the second pixel electrode 321 into light of the second wavelength band. For example, when the intermediate layer 303 on the second pixel electrode 321 generates light with a wavelength in the range of about 450 nm to about 495 nm, the second quantum dot layer 425 can convert the light into light with a wavelength in the range of about 495 nm to about 570 nm. Therefore, the light with a wavelength in the range of about 495 nm to about 570 nm is emitted from the second pixel PX2 to the outside via the upper substrate 400.

[0065] The third quantum dot layer 435 can convert light of the first wavelength band generated by the intermediate layer 303 on the third pixel electrode 331 into light of the third wavelength band. For example, when light with a wavelength in the range of about 450 nm to about 495 nm is generated from the intermediate layer 303 of the third pixel electrode 331, the third quantum dot layer 435 can convert the light into light with a wavelength in the range of about 630 nm to about 780 nm. Therefore, light with a wavelength in the range of about 630 nm to about 780 nm is emitted from the third pixel PX3 to the outside via the upper substrate 400.

[0066] Each of the second quantum dot layer 425 and the third quantum dot layer 435 may have a structure in which quantum dots are dispersed in a resin. The quantum dots may include semiconductor materials such as cadmium sulfide (CdS), cadmium telluride (CdTe), zinc sulfide (ZnS), indium phosphide (InP), etc. Each of the quantum dots may have a size of several nanometers, and the wavelength of the light after conversion may vary depending on the size of each of the quantum dots. The second quantum dot layer 425 and the third quantum dot layer 435 may include any type of resin capable of transmitting light. For example, a polymer resin such as acrylic, benzocyclobutene (BCB), or hexamethyldisiloxane (HMDSO) may be used as a material for forming the second quantum dot layer 425 and the third quantum dot layer 435.

[0067] The first pixel PX1 emits light of the first wavelength generated by the intermediate layer 303 to the outside without converting the wavelength. Therefore, the first pixel PX1 does not include a quantum dot layer. As described above, since the quantum dot layer is not necessary in the first through hole 410, a light transmission layer (i.e., a transparent layer) 415 including a light-transmitting resin is provided in the first through hole 410. The light transmission layer 415 may include acrylic, benzocyclobutene (BCB), or hexamethyldisiloxane (HMDSO). Alternatively, Figure 1 Unlike the illustrated embodiment, the light transmitting layer 415 may not be present in the first through hole 410 .

[0068] In the display device shown, light of a first wavelength band is emitted from the first pixel PX1, light of a second wavelength band is emitted from the second pixel PX2, and light of a third wavelength band is emitted from the third pixel PX3. Therefore, the display device can display a full-color image.

[0069] During the manufacturing process, the first through holes 410 to the third through holes 430 are provided on the upper substrate 400, and then the first through holes 410 to the third through holes 430 are positioned in the first through holes 410 to the third through holes 430. Therefore, the mixing of the materials used during the process of forming the first through holes 413 to the third through holes 433 can be effectively prevented. For example, according to the related art, when forming the first color filter layer and forming the second color filter layer, the material for forming the first color filter layer and the material for forming the second color filter layer are mixed on the substrate in the display device. However, in the display device according to the exemplary embodiment shown, the first through holes 410 to the third through holes 430 are in the first through holes 410 to the third through holes 430, and therefore, the mixing of the materials used to form the first through holes 413 to the third color filter layer 433 can be effectively prevented.

[0070] In a display device according to the related art, it is conceivable to form a barrier layer on the substrate before forming the first color filter layer and the second color filter layer. Due to the barrier layer, the material used to form the first color filter layer and the material used to form the second color filter layer will not mix. However, in this case, in order to form the barrier layer to a sufficient height, the first barrier layer is formed and the second barrier layer must be formed on the first barrier layer. Therefore, the process will be complicated. In the display device according to the exemplary embodiment shown, the process of forming the barrier layer during the manufacturing process is avoided, so the manufacturing process can be simplified and the defect rate can be reduced.

[0071] According to the display device of the illustrated exemplary embodiment, as described above, the second quantum dot layer 425 and the third quantum dot layer 435 are in the second through-hole 420 and the third through-hole 430. Therefore, the above description regarding the first to third color filter layers 413 to 433 during the manufacturing process can also be applied to the second quantum dot layer 425 and the third quantum dot layer 435. That is, in the display device according to the illustrated exemplary embodiment, mixing of materials used to form the second quantum dot layer 425 and the third quantum dot layer 435 can be effectively prevented during the manufacturing process.

[0072] For reference, the second quantum dot layer 425 is located between the second color filter layer 423 and the counter electrode 305. Because the second color filter layer 423 transmits light of the second wavelength band, the light of the first wavelength band generated by the intermediate layer 303 needs to be converted into light of the second wavelength band by the second quantum dot layer 425 before entering the second color filter layer 423, which transmits light of the second wavelength band. Similarly, the third quantum dot layer 435 is located between the third color filter layer 433 and the counter electrode 305. Therefore, the upper surface 413a of the first color filter layer 413 in the direction opposite to the direction toward the lower substrate 100 (e.g., the negative Z-axis direction), the upper surface 423a of the second color filter layer 423 in the direction opposite to the direction toward the lower substrate 100 (e.g., the negative Z-axis direction), and the upper surface 433a of the third color filter layer 433 in the direction opposite to the direction toward the lower substrate 100 (e.g., the negative Z-axis direction) can form a continuous surface with the upper surface 400a of the upper substrate 400 in the direction opposite to the direction toward the lower substrate 100 (e.g., the negative Z-axis direction) (e.g., facing away from the lower substrate 100). For example, the upper surface 413a of the first color filter layer 413, the upper surface 423a of the second color filter layer 423, the upper surface 433a of the third color filter layer 433, and the upper surface 400a of the upper substrate 400 can be substantially coplanar.

[0073] Furthermore, it may be necessary to prevent damage to the second quantum dot layer 425 and the third quantum dot layer 435 during the manufacturing process or during use of the display device after manufacturing. For example, outgassing generated from the second color filter layer 423 may damage the quantum dots in the second quantum dot layer 425, preventing the quantum dots from converting light in the first wavelength band into light in the second wavelength band. Similarly, outgassing generated from the third color filter layer 433 may damage the quantum dots in the third quantum dot layer 435, preventing the quantum dots from converting light in the first wavelength band into light in the third wavelength band. Therefore, it may be necessary to prevent damage to the second quantum dot layer 425 and the third quantum dot layer 435 due to outgassing. To this end, a first protective layer 405 may be provided between the second color filter layer 423 and the second quantum dot layer 425, and between the third color filter layer 433 and the third quantum dot layer 435. The first protective layer 405 may include an inorganic material such as silicon oxide, silicon nitride, or silicon oxynitride, so that outgassing does not pass through the first protective layer 405. The first protective layer 405 may be integrally formed as a single body over the entire surface of the upper substrate 400. Thus, the first protective layer 405 is between the first color filter layer 413 and the light transmission layer 415 in the first through hole 410 of the upper substrate 400.

[0074] The first protective layer 405 includes an inorganic material and thus may have a shape corresponding to its lower portion when formed. Figure 1, the first protective layer 405 is flat on portions of the reflective layer 403 outside the first to third through holes 410 to 430 of the upper substrate 400, and is formed along the reflective layer 403 in the first to third through holes 410 to 430 to contact the first to third color filter layers 413 to 433. A process of forming the first protective layer 405 will be described later.

[0075] Furthermore, the intermediate layer 303 included in the organic light-emitting device (OLED) is susceptible to impurities such as external moisture or oxygen. Therefore, it is necessary to prevent outgassing generated by the second quantum dot layer 425 and the third quantum dot layer 435 from traveling toward the intermediate layer 303 during manufacturing or during use of the display device after manufacturing. To this end, a second protective layer 407 may be provided between the second quantum dot layer 425 and the counter electrode 305, and between the third quantum dot layer 435 and the counter electrode 305. The second protective layer 407 may include an inorganic material such as silicon oxide, silicon nitride, or silicon oxynitride, so that outgassing does not pass through the second protective layer 407. The second protective layer 407 may be integrally formed as a single, integral body across the entire surface of the upper substrate 400. Thus, the second protective layer 407 contacts the light-transmitting layer 415 in the first through-hole 410 of the upper substrate 400, contacts the second quantum dot layer 425 in the second through-hole 420, and contacts the third quantum dot layer 435 in the third through-hole 430. In addition, the second protective layer 407 contacts the first protective layer 405 on portions in the lower surface 400 b of the upper substrate 400 , the portions being outside the first to third through holes 410 to 430 .

[0076] Figures 2A to 9 It shows the manufacturing Figure 1 In detail, Figures 2A to 9 It shows the manufacturing Figure 1 sectional views or plan views of an exemplary process of an upper substrate 400, first to third color filter layers 413 to 433, a second quantum dot layer 425, a third quantum dot layer 435, a first protective layer 405, and a second protective layer 407 in a display device.

[0077] like Figure 2B and Figure 3 As shown in FIG, an upper substrate 400 including first to third through holes 410 to 430 is prepared. Here, Figure 2B Shown along as a plan view Figure 3 A cross-section of the display device taken along line II-II.

[0078] Reference Figure 2A , a layer 400_0 for forming an upper substrate 400 is prepared on the carrier substrate 10. In addition, referring to Figure 2B, forming the first through hole 410 to the third through hole 430 in the layer 400_0. For example, a material for forming polyimide is applied to the carrier substrate 10 by a slit coating method or the like to obtain the layer 400_0, and a process of exposing and developing a specific portion by using a photomask is performed to form the first through hole 410 to the third through hole 430 in the layer 400_0 on the carrier substrate 10. Thereafter, as Figure 2B and Figure 3 As shown in FIG, the material for forming polyimide is cured by UV exposure, heat treatment, etc. to obtain the upper substrate 400 including the first to third through holes 410 to 430. The carrier substrate 10 may include, for example, a glass substrate.

[0079] The upper substrate 400 may be modified in various ways. For example, the upper substrate 400 may include a polymer resin other than polyimide and may have a multilayer structure including at least two layers and a barrier layer between the at least two layers. The at least two layers may include a polymer resin. The barrier layer may include an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, etc.

[0080] When the material for forming the upper substrate 400, such as polyimide, has the same properties as those of the photoresist, the material is applied to the carrier substrate 10 as described above to form the layer 400_0, and thereafter, a process of exposing and developing specific portions by using a photomask is performed to form the first through holes 410 to the third through holes 430 in the layer 400_0 on the carrier substrate 10. However, when the material for forming the upper substrate 400 does not have the same properties as those of the photoresist, the layer 400_0 is formed on the carrier substrate 10 using the material for forming the upper substrate 400, and thereafter, the first through holes 410 to the third through holes 430 can be formed in the layer 400_0 by a wet etching method using the photoresist.

[0081] Because the first through holes 410 to the third through holes 430 are formed through processes such as exposure and development, either when the material used to form the upper substrate 400 has photoresist properties or when an additional photoresist is used, the inner surface of each of the first through holes 410 to the third through holes 430 is inclined relative to the lower surface 400b of the upper substrate 400. Therefore, the reflective layer 403 to be formed later can be arranged on the inner surface of each of the first through holes 410 to the third through holes 430 without causing defects. Here, the cross-sectional area of ​​each of the first through holes 410 to the third through holes 430, taken along a virtual plane (XY plane) substantially parallel to the lower surface 400b of the upper substrate 400, decreases as it approaches from the lower surface 400b of the upper substrate 400 toward the upper surface 400a.

[0082] The upper substrate 400 may be formed by another method. For example, a layer 400_0 is formed on the carrier substrate 10 using a material for forming the upper substrate 400. Then, a laser beam is irradiated to a specific portion of the layer 400_0 to obtain the upper substrate 400 including the first through holes 410 to the third through holes 430.

[0083] When the laser beam is irradiated, the laser beam is not irradiated to the layer 400_0 on the carrier substrate 10 by passing the laser beam through the carrier substrate 10, but is irradiated directly to the layer 400_0 on the carrier substrate 10. Figure 2B , a layer 400_0 for forming the upper substrate 400 is arranged on the surface of the carrier substrate 10, the surface being in the negative Z-axis direction, and a laser beam is irradiated in the positive Z-axis direction from a laser beam source located in the negative Z-axis direction relative to the layer 400_0. Then, the laser beam can be directly irradiated to the layer 400_0 on the carrier substrate 10. In this way, as Figure 2B and Figure 3 As shown in , the area of ​​the cross-section in each of the first to third through holes 410 to 430 can gradually decrease as approaching from the lower surface 400b of the upper substrate 400 toward the upper surface 400a, wherein the cross-section is cut along a virtual plane (XY plane) substantially parallel to the lower surface 400b of the upper substrate 400.

[0084] In addition, if Figure 4 As shown in FIG, a reflective layer 403 is formed on the inner surface of each of the first through hole 410 to the third through hole 430 in the upper substrate 400. For example, a metal layer is formed on the entire lower surface 400b of the upper substrate 400 by a sputtering method or the like. Here, the metal layer is also formed on the carrier substrate 10 in each of the first through hole 410 to the third through hole 430. Afterwards, the metal layer on the carrier substrate 10 is removed in each of the first through hole 410 to the third through hole 430 to obtain a reflective layer 403 as shown in FIG. Figure 4 The reflective layer 403 is shown in FIG.

[0085] The metal layer on the carrier substrate 10 can be removed in each of the first through holes 410 to the third through holes 430 by using a dry etching method using a photoresist. For example, a photoresist is deposited on the metal layer on the entire lower surface 400b of the upper substrate 400. Then, an exposure and development process is performed to remove only the photoresist on the metal layer on the carrier substrate 10 in each of the first through holes 410 to the third through holes 430. Thereafter, the metal layer on the carrier substrate 10 can be removed in each of the first through holes 410 to the third through holes 430 by using a dry etching method. Here, the photoresist remaining on the reflective layer 403 is also removed.

[0086] As described above, since the inner surface of each of the first to third through holes 410 to 430 is inclined relative to the lower surface 400 b of the upper substrate 400 , the reflective layer 403 may be formed on the inner surface of each of the first to third through holes 410 to 430 of the upper substrate 400 .

[0087] When the inner surface of each of the first to third through holes 410 to 430 is substantially perpendicular to the lower surface 400 b of the upper substrate 400 , a defect occurs in which the metal layer is not formed on the inner surface of each of the first to third through holes 410 to 430 when the metal layer is formed on the entire lower surface 400 b of the upper substrate 400 .

[0088] Afterwards, if Figure 5 As shown in FIG, the first color filter layer 413 in the first through hole 410, the second color filter layer 423 in the second through hole 420, and the third color filter layer 433 in the third through hole 430 are formed by an inkjet printing method. Since the color filter layers are formed by the inkjet printing method, the amount of material waste generated when forming the color filter layers can be reduced. In addition, since the first to third color filter layers 413 to 433 are respectively in the first to third through holes 410 to 430, mixing of materials used during the process of forming the first to third color filter layers 413 to 433 can be effectively prevented.

[0089] In addition, if Figure 6 As shown in , the first protective layer 405 is formed by using silicon oxide, silicon nitride or silicon oxynitride to correspond to the entire lower surface 400b of the upper substrate 400. Therefore, the first protective layer 405 can be in contact with the reflective layer 403 on the inner surface of the first through hole 410 to the third through hole 430 and the first color filter layer 413 to the third color filter layer 433. Because the reflective layer 403 is also on the portion outside the first through hole 410 to the third through hole 430 of the lower surface 400b of the upper substrate 400, the first protective layer 405 is also in contact with the reflective layer 403 on the corresponding portion. The first protective layer 405 can be formed by a CVD method. Here, in order not to damage the previously formed first color filter layer 413 to the third color filter layer 433, a low-temperature CVD method performed at a temperature of about 200°C or less can be used.

[0090] After forming the first protective layer 405, as shown in FIG. Figure 7As shown in FIG, second quantum dot layer 425 and third quantum dot layer 435 are formed in second through hole 420 and third through hole 430. Because the quantum dot layers are formed by inkjet printing, the amount of material waste generated when forming the quantum dot layers can be reduced. In addition, because second quantum dot layer 425 and third quantum dot layer 435 are in second through hole 420 and third through hole 430, mixing of materials used in the process of forming second quantum dot layer 425 and third quantum dot layer 435 can be effectively prevented. Optionally, light-transmitting layer 415 can be formed on first protective layer 405 in first through hole 410.

[0091] In addition, if Figure 8 As shown in , the second protective layer 407 is formed by using silicon oxide, silicon nitride, or silicon oxynitride to correspond to the entire lower surface 400b of the upper substrate 400. Therefore, the second protective layer 407 can be in contact with the first protective layer 405 and the second quantum dot layer 425 and the third quantum dot layer 435 on the outer sides of the first through-holes 410 to the third through-holes 430. The second protective layer 407 can be formed by a CVD method. Here, in order not to damage the previously formed first to third color filter layers 413 to 433 and / or the second quantum dot layer 425 and the third quantum dot layer 435, a low-temperature CVD method performed at a temperature of about 200°C or less can be used.

[0092] As described above, after forming the upper substrate 400, the first to third color filter layers 413 to 433, the second quantum dot layer 425, the third quantum dot layer 435, the first protective layer 405 and the second protective layer 407, the upper substrate 400 and the lower substrate 100 are placed as shown in FIG. Figure 9 . Prior to the above process, the first to third thin film transistors 210 to 230, the first to third pixel electrodes 311 to 331, the intermediate layer 303, and the counter electrode 305 are formed on the lower substrate 100 by a separate process. In addition, after the upper substrate 400 is bonded to the lower substrate 100, the carrier substrate 10 is removed from the upper substrate 400, and then, Figure 1 Alternatively, the carrier substrate 10 may be removed before the upper substrate 400 and the lower substrate 100 are bonded to each other, and then, the upper substrate 400 and the lower substrate 100 are bonded to each other.

[0093] The bonding of the lower substrate 100 and the upper substrate 400 may be achieved by a sealant applied to the outside of the display area to bond the lower substrate 100 and the upper substrate 400 to each other. Figure 1 and Figure 9, and then, the lower substrate 100 and the upper substrate 400 are bonded to each other via a filling material. In this case, the filling material is a light-transmitting filling material including a light-transmitting polymer resin such as polyimide, epoxy resin, etc.

[0094] In the above description, the reflective layer 403 is formed on the portion of the lower surface 400b of the upper substrate 400 outside the first through hole 410 to the third through hole 430 and on the inner surface of each of the first through hole 410 to the third through hole 430 in the upper substrate 400. However, one or more exemplary embodiments are not limited thereto. For example, as Figure 1 A cross-sectional view of another exemplary embodiment of a display device Figure 10 As shown in FIG, the reflective layer 403 may be only on the inner surface of each of the first through holes 410 to the third through holes 430 in the upper substrate 400, and may not be on the portion of the lower surface 400b of the upper substrate 400 outside the first through holes 410 to the third through holes 430. In this case, the first protective layer 405 is in contact with the lower surface 400b of the upper substrate 400 on the outer portion of the first through holes 410 to the third through holes 430.

[0095] In addition, the surface of the second color filter layer 423 in the second through hole 420 (the surface facing the second quantum dot layer 425) and the surface of the third color filter layer 433 in the third through hole 430 (the surface facing the third quantum dot layer 435) can be substantially flat so as to be substantially parallel to the upper surface 400a of the upper substrate 400. This is because the second color filter layer 423 and the third color filter layer 433 are formed by an inkjet printing method, and therefore the material used to form the second color filter layer 423 and the third color filter layer 433 is in a liquid state. During the manufacturing process, the liquid is solidified and / or fired so that the second color filter layer 423 and the third color filter layer 433 are in a solid state. Similarly, the surface of the first color filter layer 413 (the surface facing the counter electrode 305) is substantially flat so as to be substantially parallel to the upper surface 400a of the upper substrate 400.

[0096] A display device having an organic light emitting device as a display device has been described, but exemplary embodiments are not limited thereto. Figure 1In the structure shown in , the display device connected to the first to third thin film transistors 210, 220, and 230 may not include an organic light-emitting device, but may include other light-emitting devices. For example, instead of the first to third pixel electrodes 311, 321, and 331, the intermediate layer 303, and the counter electrode 305, the first light-emitting device may be connected to the first thin film transistor 210, the second light-emitting device may be connected to the second thin film transistor 220, and the third light-emitting device may be connected to the third thin film transistor 230. Each of the first to third light-emitting devices may include a first light-emitting layer. The first light-emitting layer may emit light in a first wavelength band, for example, light with a wavelength in the range of about 450 nm to about 495 nm.

[0097] In the display device according to the above exemplary embodiment, the first to third light-emitting devices in the display device include first to third pixel electrodes 311 to 331, counter electrodes 305 corresponding to the first to third pixel electrodes 311 to 331, and the first light-emitting layers in the first to third light-emitting devices are provided on the first to third pixel electrodes 311 to 331 so as to be between the first to third pixel electrodes 311 to 331 and the counter electrodes 305. According to another exemplary embodiment, the first to third light-emitting devices may include nano-LEDs. A nano-LED is a type of LED and may have a size ranging from several nanometers to tens of nanometers. A pixel of the display device may include one or more nano-LEDs having a smaller size.

[0098] In addition, in the display device according to the above exemplary embodiment and its modified example, the upper substrate 400 may include an opaque material, that is, the upper substrate 400 may be opaque. For example, the upper substrate 400 may include a black pigment such as carbon black or an opaque material. This can be achieved when the material for forming the upper substrate 400 applied to the carrier substrate 10 includes a black pigment or an opaque material. Alternatively, when the material for forming the upper substrate 400 is applied to form a layer, the layer may include particles containing a black pigment or an opaque material. In this case, the upper substrate 400 can serve as a black matrix, and therefore, various effects such as preventing the visibility of the displayed image from being degraded due to external light can be obtained.

[0099] According to the principles of the invention and one or more exemplary embodiments of the invention, a display device can have a low defect rate and consume a smaller amount of material during a manufacturing process. However, exemplary embodiments are not limited to the above effects.

[0100] Although certain exemplary embodiments and implementations have been described herein, other embodiments and modifications will be apparent from this description. Accordingly, the inventive concept is not limited to such embodiments, but rather to the broader scope of the appended claims and various obvious modifications and equivalent arrangements as will be apparent to those skilled in the art.

Claims

1. A display device, comprising: first base; A first light emitting device, a second light emitting device, and a third light emitting device are disposed on the first substrate, each of the first to third light emitting devices comprising a first light emitting layer; a second substrate disposed on the first substrate, the first to third light-emitting devices being between the first substrate and the second substrate, the second substrate comprising a first through hole, a second through hole, and a third through hole respectively overlapping the first to third light-emitting devices; a reflective layer on an inner surface of each of the first through holes to the third through holes; a first color filter layer in the first through hole; a second color filter layer and a second quantum dot layer in the second through hole; a third color filter layer and a third quantum dot layer in the third through hole; a first protective layer between the second color filter layer and the second quantum dot layer and between the third color filter layer and the third quantum dot layer; as well as a second protective layer between the second quantum dot layer and the second light-emitting device and between the third quantum dot layer and the third light-emitting device; The second protection layer contacts the first protection layer on a portion of a lower surface of the second substrate between the first through hole and the outside of the third through hole, and the lower surface faces the first substrate.

2. The display device according to claim 1, wherein The first to third light emitting devices include: a first pixel electrode, a second pixel electrode, and a third pixel electrode; and a counter electrode, overlapping the first pixel electrode to the third pixel electrode, The first light emitting layer is provided throughout the first pixel electrode to the third pixel electrode, and is placed between the first pixel electrode to the third pixel electrode and the counter electrode.

3. The display device according to claim 1, wherein The first light emitting layer is configured to emit light of a first wavelength band, the second quantum dot layer is configured to convert the light of the first wavelength band into light of a second wavelength band, and the third quantum dot layer is configured to convert the light of the first wavelength band into light of a third wavelength band. The display device according to claim 1 , wherein: The reflective layer covers a portion of the first surface of the second substrate outside the first through hole to the third through hole, and the first surface of the second substrate faces the first substrate.

5. The display device according to claim 1, wherein The second quantum dot layer is between the second color filter layer and the second light emitting device, and the third quantum dot layer is between the third color filter layer and the third light emitting device. The display device according to claim 5 , wherein: The first substrate is a lower substrate, the second substrate is an upper substrate, and the upper surfaces of the first color filter layer, the second color filter layer, and the third color filter layer form a continuous surface with the upper surface of the upper substrate, and the upper surface of the upper substrate faces away from the lower substrate.

7. The display device according to claim 1, wherein The first protective layer is integrally formed as a single entity over the entire surface of the second substrate. 8 . The display device according to claim 1 , further comprising a light-transmitting layer in the first through hole, the light-transmitting layer being interposed between the first color filter layer and the first light-emitting device.

9. The display device according to claim 8, wherein The first protection layer is between the first color filter layer and the light transmission layer.

10. The display device according to claim 1, wherein The second protective layer is integrally formed as a single entity over the entire surface of the second substrate.

11. The display device according to claim 1, wherein The inner surface of each of the first to third through holes is inclined with respect to a first surface of the second substrate, the first surface facing the first substrate.

12. The display device according to claim 1, wherein A first cross-sectional area of ​​each of the first to third through holes taken along a first plane parallel to the first surface of the second substrate is smaller than a second cross-sectional area of ​​each of the first to third through holes taken along a second plane parallel to the first surface of the second substrate, the second plane being closer to the first substrate than the first plane, and the first surface facing the first substrate.

13. The display device according to claim 1, wherein The second substrate includes an opaque material.

14. The display device according to claim 1, wherein The second substrate includes a black pigment.

15. The display device according to claim 1, wherein The second substrate is opaque.

16. A method for manufacturing a display device, the method comprising the following steps: forming a layer of a second substrate on a carrier substrate; forming the second substrate by forming a first through-hole, a second through-hole, and a third through-hole in the layer of the second substrate; forming a reflective layer on the second substrate; removing the reflective layer on the carrier substrate in the first through hole to the third through hole; forming a first color filter layer in the first through hole; forming a second color filter layer in the second through hole; forming a third color filter layer in the third through hole; forming a first protective layer to cover the first color filter layer, the second color filter layer, and the third color filter layer; forming a second quantum dot layer overlapping the second color filter layer on the first protective layer in the second through hole; forming a third quantum dot layer on the first protection layer in the third through hole and overlapping the third color filter layer; as well as forming a second protective layer on the second quantum dot layer, the third quantum dot layer and the first protective layer; The second protection layer contacts the first protection layer on a portion of the lower surface of the second substrate between the first through hole and the outside of the third through hole.

17. The method according to claim 16, further comprising the steps of: forming a first light emitting device, a second light emitting device, and a third light emitting device on a first substrate, wherein the first to third light emitting devices include a first light emitting layer; as well as aligning and bonding the first substrate and the second substrate to each other, with the first to third light emitting devices between the first substrate and the second substrate; The first through hole to the third through hole are overlapped with the first light emitting device to the third light emitting device respectively.

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