Substrate temperature control device, substrate processing device and control method

Abstract

Embodiments include a substrate temperature control device, a substrate processing device including the substrate temperature control device, and a method for controlling the device, which can control the temperature of the substrate in each area without increasing the volume of the device. The substrate temperature control device includes: a support plate for supporting the substrate; a plurality of heating units placed in different areas of the substrate and controlling the temperature of the substrate in each area; a power supply unit for providing power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit and including one or more transistor devices; and a controller for controlling the power provided to each heating unit by controlling the switch unit.

Description

[0001] This application is a divisional application of a patent application with application number 201710291951.2, application date April 28, 2017, and invention name “Substrate temperature control device, substrate processing device and control method”. Technical Field

[0002] The present disclosure relates to an apparatus for controlling the temperature of a substrate, a substrate processing apparatus including the substrate temperature control apparatus, and a method of controlling the apparatus. Background Art

[0003] In order to control the temperature of a substrate when manufacturing a semiconductor, a device for controlling the temperature of the substrate is required. Existing substrate temperature control devices have controlled various heating units through corresponding multiple controllers. The heating units control the temperature of the substrate according to various regions of the substrate.

[0004] However, in the case where a substrate including a plurality of zones requires more than several hundred heating units, and when a controller corresponding to the heating units is obtained, an apparatus at least thirty times larger than the existing apparatus is required. This goes against the current trend of reducing the size of the apparatus.

[0005] Therefore, there is a need for a technology for controlling the temperature of a substrate having a plurality of zones without increasing the size of the device. Summary of the invention

[0006] Embodiments include a substrate temperature control apparatus, a substrate processing apparatus including the substrate temperature control apparatus, and a method of controlling the apparatus, which can control the temperature of the substrate per region without increasing the volume of the apparatus.

[0007] The purpose of the present invention is not limited to the above description. Those skilled in the art will understand other purposes of the present invention from the following description.

[0008] An example embodiment of the present invention may provide a substrate temperature control device, comprising: a support plate for supporting a substrate; a plurality of heating units placed in different regions of the substrate and controlling the temperature of the substrate per region; a power supply unit for providing power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit and comprising one or more transistor devices; and a controller for controlling the power provided to each heating unit by controlling the switch unit.

[0009] In example embodiments, the transistor device may include a MOSFET device.

[0010] In example embodiments, the switch unit may include a plurality of MOSFET channels respectively corresponding to the plurality of heating units.

[0011] In an example implementation, the controller may selectively turn on the plurality of MOSFET channels.

[0012] In example embodiments, the substrate temperature control apparatus may further include a sensor unit for detecting temperature distribution information of the substrate.

[0013] In an example implementation, the controller may determine which MOSFET channel to turn on based on the temperature distribution information.

[0014] In an example embodiment, the substrate temperature control device may further include: a first filter connected between the power supply unit and the switch unit and blocking high-frequency power signals flowing into the power supply unit; and a second filter disposed between the switch unit and the controller and blocking high-frequency power signals flowing into the controller.

[0015] In example embodiments, the second filter may include a ferrite core.

[0016] In an example embodiment, the power supply unit may provide AC power.

[0017] In an example embodiment, the power supply unit may provide AC power below a predetermined frequency. The first filter and the second filter may block high frequency power signals above a predetermined frequency and may pass AC power signals below a predetermined frequency.

[0018] An example embodiment of the present inventive concept may provide a substrate processing device, comprising: a chamber for providing a substrate processing space therein; a substrate support assembly for supporting the substrate and being placed in the chamber; a gas supply unit for supplying gas in the chamber; a plasma generating unit for making the gas into a plasma state and comprising a high-frequency power supply for providing high-frequency power; and a substrate temperature control unit for controlling the temperature of the substrate, wherein the substrate temperature control unit may include: a plurality of heating units placed in different regions of the substrate and controlling the temperature of the substrate per region; a power supply unit for providing power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit and comprising one or more transistor devices; and a controller for controlling the power supplied to each heating unit by controlling the switch unit.

[0019] In example embodiments, the transistor device may include a MOSFET device.

[0020] In an example embodiment, the switch unit may include a plurality of MOSFET channels corresponding to the plurality of heating units, respectively. The controller may selectively turn on the plurality of MOSFET channels.

[0021] In example embodiments, the substrate temperature control unit may further include a sensor unit for detecting temperature distribution information of the substrate. The controller may determine which channel to open based on the temperature distribution information.

[0022] In an example embodiment, the substrate temperature control unit may further include: a first filter connected between the power supply unit and the switching unit and blocking high-frequency power signals flowing into the power supply unit; and a second filter disposed between the switching unit and the controller and blocking high-frequency power signals flowing into the controller.

[0023] In example embodiments, the second filter may include a ferrite core.

[0024] In an example embodiment, the power supply unit may provide AC power.

[0025] In an example embodiment, the power supply unit may provide AC power below a predetermined frequency. The first filter and the second filter may block high frequency power signals above a predetermined frequency and may pass AC power signals below a predetermined frequency.

[0026] Example embodiments of the inventive concepts may provide a method for controlling a substrate processing apparatus, including: detecting temperature distribution information of the substrate including a plurality of regions; and controlling the switching unit based on the temperature distribution information.

[0027] In example embodiments, controlling the switch unit based on the temperature distribution information may include: determining a region for supplying power based on the temperature distribution information; and turning on a MOSFET channel corresponding to the determined region of the substrate.

[0028] In an example embodiment, controlling the switching unit based on the temperature distribution information may include: determining an area for providing power based on the temperature distribution information; and applying different signals to the MOSFET gate corresponding to the determined area of ​​the substrate and the remaining MOSFET gates corresponding to the remaining determined areas.

[0029] Embodiments of the inventive concept may provide a substrate temperature control apparatus and may control the temperature of the substrate per region without increasing the volume of the apparatus.

[0030] The purpose of the present invention is not limited to the above description. Those skilled in the art will understand other effects of the present invention from the following description and the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 is an exemplary diagram illustrating a substrate processing apparatus according to an embodiment.

[0032] Figure 2 2 is a diagram for explaining a problem of a substrate temperature control device according to the related art.

[0033] Figure 3 is an exemplary diagram illustrating a substrate temperature control unit according to an embodiment.

[0034] Figure 4 and Figure 5 is a diagram for explaining a method for controlling the temperature of a substrate W having a plurality of regions according to an embodiment.

[0035] Figure 6 is a diagram for explaining the operation of a substrate temperature control unit according to an embodiment.

[0036] Figure 7 is an exemplary flow chart illustrating a method for controlling a substrate processing apparatus according to an embodiment. DETAILED DESCRIPTION

[0037] The advantages and features of the inventive concept and its implementation methods will be made apparent by the following embodiments described with reference to the accompanying drawings. However, the inventive concept can be implemented in different forms and should not be construed as being limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure will be thorough and complete and the scope of the invention will be fully communicated to those skilled in the art. In addition, the inventive concept is limited only by the scope of the claims.

[0038] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the inventive concept belongs. It should also be understood that those terms defined in commonly used dictionaries, for example, should be interpreted as having a meaning consistent with their meaning in the context of the prior art and / or this specification, and should not be interpreted in an idealized or overly formal sense, unless explicitly defined as such herein.

[0039] The terms used herein are only used for the purpose of describing specific embodiments and are not intended to limit the inventive concept. As used herein, the singular forms "one", "a", and "said" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the terms "include" and / or "comprise" when used in this specification are used to specify the existence of the claimed features, wholes, steps, operations, elements and / or parts, but do not exclude the existence or additivity of one or more other features, wholes, steps, operations, elements, parts or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the items listed in question.

[0040] Figure 1 is an exemplary diagram illustrating a substrate processing apparatus according to an embodiment.

[0041] refer to Figure 1 The substrate processing apparatus 10 processes the substrate W using plasma. For example, the substrate processing apparatus 10 may perform an etching process on the substrate W. The substrate processing apparatus 10 may include a chamber 620, a substrate support assembly 200, a showerhead 300, a gas supply unit 400, a baffle unit 500, and a plasma generating unit 600.

[0042] The chamber 620 may provide a space for performing a process for processing a substrate therein. The chamber 620 may have a processing space therein and may be provided in a sealed form. The chamber 620 may be assembled by a metal material. The chamber 620 may be assembled by an aluminum material. The chamber 620 may be grounded. The exhaust hole 102 may be formed on the bottom surface of the chamber 620. The exhaust hole 102 may be connected to an exhaust line 151. Reaction byproducts generated in the process steps and gases present in the internal space of the chamber may be discharged through the exhaust line 151. The internal space of the chamber 620 may be decompressed to a predetermined pressure by an exhaust process.

[0043] In an embodiment, a liner 130 may be provided in the chamber 620. The liner 130 may have a cylindrical shape, wherein the top end and the bottom end are open. The liner 130 may be provided to contact the inner side wall of the chamber 620. The liner 130 may protect the inner side wall of the chamber 620, thereby making it possible to prevent arc discharge of the inner side wall of the chamber 620. In addition, the liner 130 may prevent impurities generated during a process for processing a substrate from being deposited on the inner side wall of the chamber 620. Alternatively, the liner 130 may not be provided.

[0044] The substrate support assembly 200 may be located in the chamber 620. The substrate support assembly 200 may support the substrate W. The substrate support assembly 200 may include an electrostatic chuck 210 for holding the substrate W using an electrostatic force. On the other hand, the substrate support assembly 200 may support the substrate W by various methods such as mechanical clamping. The substrate support assembly 200 including the electrostatic chuck 210 may be described as follows.

[0045] The substrate support assembly 200 may include an electrostatic chuck 210, a bottom cover 250, and a plate 270. The substrate support assembly 200 may be installed in the chamber 620 away from a bottom surface of the chamber 620.

[0046] The electrostatic chuck 210 may include a dielectric plate 220, a body 230, and a focusing ring 240. The electrostatic chuck 210 may support a substrate W. The dielectric plate 220 may be located on the electrostatic chuck 210. The dielectric plate 220 may be a dielectric substance having a circular shape. The substrate W may be placed on an upper surface of the dielectric plate 220. The radius of the upper surface of the dielectric plate 220 may be smaller than the radius of the substrate W. Thus, a boundary area of ​​the substrate W may be located outside the dielectric plate 220.

[0047] The dielectric plate 220 may include a first electrode 223, a heating unit 225, and a first supply path 221. The first supply path 221 may be provided from the upper side of the dielectric plate 220. The first supply path 221 may include a plurality of paths spaced apart from each other, and serves as a path through which a heat transfer medium is supplied to the bottom surface of the substrate W.

[0048] The first electrode 223 may be electrically connected to the first power source 223a. The first power source 223a may include a direct current. The switch 223b may be installed between the first electrode 223 and the first power source 223a. The first electrode 223 may be electrically connected to the first power source 223a in response to activation of the switch 223b. When the switch 223b is turned on, a direct current may be applied to the first electrode 223. The electrostatic force generated by the current applied to the first electrode 223 may act between the first electrode 223 and the substrate W. The substrate may be held on the dielectric plate 220 by the electrostatic force.

[0049] The heating unit 225 may be located at the bottom of the first electrode 223. The heating unit 225 may be electrically connected to the second power source 225a. The heating unit 225 may generate heat by resisting the current from the second power source 225a. The heat may be transferred to the substrate W through the dielectric plate 220. The substrate W may be maintained at a predetermined temperature by the heat generated from the heating unit 225. The heating unit 225 may include a spiral coil.

[0050] The main body 230 may be located below the dielectric plate 220. The bottom surface of the dielectric plate 220 and the top surface of the main body 230 may be bonded by an adhesive 236. The main body 230 may be made of an aluminum material. The central area of ​​the top surface of the main body 230 may be higher than the boundary area. The central area of ​​the top surface of the main body 230 may correspond to the bottom surface of the dielectric plate 220 and may be bonded to the bottom surface of the dielectric plate 220. The first circulation path 231, the second circulation path 232, and the second supply path 233 may be formed in the main body 230.

[0051] The first circulation path 231 may be used as a path through which the heat transfer medium circulates. The first circulation path 231 may be formed in the body 230 in a spiral shape. Alternatively, the first circulation path 231 may include an annular path with different radii. The path may be arranged so that: the center of the path has the same height. The first circulation paths 231 may be connected to each other. The first circulation paths 231 may be formed at the same height.

[0052] The second circulation path 232 can be used as a path for the cooling fluid to circulate. The second circulation path 232 can be formed in the body 230 in a spiral shape. Alternatively, the second circulation path 232 may include an annular path with different radii. The path may be arranged so that: the center of the path has the same height. The second circulation paths 232 may be connected to each other. The second circulation path 232 may have a cross-sectional area greater than the first circulation path 231. The second circulation path 232 may be formed at the same height. The second circulation path 232 may be located below the first circulation path 231.

[0053] The second supply path 233 may extend upward from the first circulation path 231 and may be provided on the body 230. The number of the second supply paths 233 may correspond to the number of paths of the first supply path 221. The second supply path 233 may connect the first circulation path 231 with the first supply path 221.

[0054] The first circulation path 231 may be connected to the heat transfer medium storage unit 231a via a supply line 231b. The heat transfer medium storage unit 231a may store a heat transfer medium. The heat transfer medium may include an inert gas. In an embodiment, the heat transfer medium may include helium. The helium may be provided to the first circulation path 231 via the supply line 231b. In addition, the helium may be supplied to the bottom surface of the substrate W via the second supply path 233 and the first supply path 221. The helium may be a medium through which the heat transferred from the plasma to the substrate W is transferred to the electrostatic chuck 210.

[0055] The second circulation path 232 may be connected to the cooling fluid storage unit 232a via a cooling fluid supply line 232c. The cooling fluid storage unit 232a may store cooling fluid. The cooling fluid storage unit 232a may include a cooler 232b. The cooler 232b may reduce the temperature of the cooling fluid. On the other hand, the cooler 232b may be mounted on the cooling fluid supply line 232c. The cooling fluid supplied to the second circulation path 232 via the cooling fluid supply line 232c may circulate along the second circulation path 232, thereby making it possible to cool the main body 230. As it is cooled, the main body 230 may cool both the dielectric plate 220 and the substrate W so that the substrate W is maintained at a predetermined temperature.

[0056] The body 230 may include a metal plate. In an embodiment, the body 230 may be assembled by a metal plate.

[0057] The focus ring 240 may be arranged in a boundary region of the electrostatic chuck 210. The focus ring 240 may have a ring shape and be arranged along the periphery of the dielectric plate 220. The top surface of the focus ring 240 may be installed so that: the outer top surface 240a is higher than the inner top surface 240b. The inner top surface 240b of the focus ring 240 may be located at the same height as the top surface of the dielectric plate 220. The inner top surface 240b of the focus ring 240 may support a boundary region of the substrate W located outside the dielectric plate 220. The outer top surface 240a of the focus ring 240 may surround the boundary region of the substrate W. The focus ring 240 may control the electromagnetic field so that the density of the plasma may be evenly dispersed throughout the substrate W. Accordingly, the plasma may be evenly formed throughout the entire region of the substrate W, thereby evenly etching each region of the substrate W.

[0058] The bottom cover 250 may be located below the substrate support assembly 200. The bottom cover 250 may be installed to be spaced apart from the bottom surface of the chamber 620. The bottom cover 250 may include an inner space 255 whose top surface is open. The outer diameter of the bottom cover 250 may be equal to the outer diameter of the body 230. A left pin module (not shown) for moving the substrate W to return to the electrostatic chuck 210 from the external return element may be located in the inner space 255 of the bottom cover 250. The left pin module (not shown) may be placed to be spaced apart from the bottom cover 250. The bottom surface of the bottom cover 250 may be made of a metal material. Air may be provided to the inner space 255 of the bottom cover 250. Since air has a lower dielectric constant than an insulator, it may reduce the electromagnetic field within the substrate support assembly 200.

[0059] The bottom cover 250 may have a connection element 253. The connection element 253 may connect the outer side wall of the bottom cover 250 to the inner side wall of the chamber 620. The connection element 253 may include a plurality of connection elements spaced apart from the outer side wall of the bottom cover 250. The connection element 253 may support the substrate support assembly 200 in the chamber 620. In addition, the connection element 253 may be connected to the inner side wall of the chamber 620, thereby allowing the bottom cover 250 to be electrically grounded. A first power supply line 223c connected to the first power supply 223a, a second power supply line 225c connected to the second power supply 225a, a heat transfer medium supply line 231b connected to the heat transfer medium storage unit 231a, and a cooling fluid supply line 232c connected to the cooling fluid storage unit 232a may extend into the bottom cover 250 through the inner space 255 of the connection element 253.

[0060] The plate 270 may be located between the electrostatic chuck 210 and the bottom cover 250. The plate 270 may cover the upper surface of the bottom cover 250. The cross-sectional area of ​​the plate 270 may correspond to the body 230. The plate 270 may include an insulator. In an embodiment, the plate 270 may be provided with one or more. The plate 270 may increase the electrical distance between the body 230 and the bottom cover 250.

[0061] The shower head 300 may be placed on the top side of the substrate support assembly 200 in the chamber 620. The shower head 300 may be opposite to the substrate support assembly 200.

[0062] The showerhead 300 may include a gas dispersion plate 310 and a support portion 330. The gas dispersion plate 310 may be placed to be spaced apart from the upper surface of the chamber 620. A regular space may be formed between the gas dispersion plate 310 and the upper surface of the chamber 620. The gas dispersion plate 310 may be assembled in the form of a plate having a constant thickness. The bottom surface of the gas dispersion plate 310 may be polarized to prevent arc discharge generated by plasma. The cross-section of the gas dispersion plate 310 may have the same form and cross-sectional area as the substrate support assembly 200. The gas dispersion plate 310 may include a plurality of exhaust holes 311. The exhaust holes 311 may vertically penetrate the gas dispersion plate 310. The gas dispersion plate 310 may include a metal material.

[0063] The support part 330 may support the side end of the gas dispersion plate 310. The top end of the support part 330 may be connected to the upper surface of the chamber 620, and the bottom end of the support part 330 may be connected to the side end of the gas dispersion plate 310. The support part 330 may include a non-metal material.

[0064] The gas supply unit 400 may provide a process gas into the chamber 620. The gas supply unit 400 may include a gas supply nozzle 410, a gas supply line 420, and a gas storage unit 430. The gas supply nozzle 410 may be installed in a central area of ​​the chamber 620. An injection nozzle may be formed on a bottom surface of the gas supply nozzle 410. The injection nozzle may supply a process gas into the chamber 620. The gas supply line 420 may connect the gas supply nozzle 410 with the gas storage unit 430. The gas supply line 420 may provide a process gas stored in the gas storage unit 430 to the gas supply nozzle 410. A valve 421 may be installed on the gas supply line 420. The valve 421 may open or close the gas supply line 420 and adjust the amount of the process gas provided via the gas supply line 420.

[0065] The baffle unit 500 may be installed between the inner side wall of the chamber 620 and the substrate support assembly 200. The baffle 510 may be annular. A plurality of penetration holes 511 may be formed in the baffle 510. The process gas provided in the chamber 620 may be discharged to the exhaust hole 102 through the penetration holes 511 of the baffle 510. The flow rate of the process gas may be controlled according to the shapes of the baffle 510 and the penetration holes 511.

[0066] The plasma generating unit 600 may make the process gas in the chamber 620 into a plasma state. In an embodiment, the plasma generating unit 600 may be implemented in an ICP type. In this case, Figure 1 As shown, the plasma generating unit 600 may include: a high frequency power supply 610 for providing high frequency power; and a first coil 621 and a second coil 622 which are electrically connected to the high frequency power supply and receive high frequency signals.

[0067] The first coil 621 and the second coil 622 may be symmetrical about the substrate W. For example, the first coil 621 and the second coil 622 may be installed in the top side of the chamber 620. The first coil 621 has a smaller diameter than the second coil 622, so it may be placed inside the top side of the chamber 620, and the second coil 622 may be placed outside the top side of the chamber 620. The first coil 621 and the second coil 622 may receive a high frequency signal from the high frequency power supply 610 and induce a time-varying magnetic field into the chamber, thereby causing the process gas provided in the chamber 620 to enter a plasma state.

[0068] A process for processing a substrate using the described substrate processing apparatus can be described as follows.

[0069] When the substrate W is placed on the substrate support assembly 200, a direct current may be applied from the first power source 223a to the first electrode 223. The electrostatic force generated by the direct current to the first electrode 223 may act between the first electrode 223 and the substrate W. The electrostatic force may hold the substrate on the electrostatic chuck 210.

[0070] When the substrate W is held on the electrostatic chuck 210, a process gas may be provided in the chamber 620 through the gas supply nozzle 410. The process gas may be uniformly dispersed to the inner area of ​​the chamber 620 through the exhaust hole 311 of the shower head 300. The high frequency power generated on the high frequency power supply may be applied to the plasma source, and thus an electromagnetic force may be generated in the chamber 100. The electromagnetic force may cause the process gas between the substrate support assembly 200 and the shower head 300 to become a plasma state. The plasma may be provided to the substrate W, and the substrate W may be processed. The plasma may perform an etching process.

[0071] Figure 2 1 is a diagram for explaining the problems of the substrate temperature control device according to the prior art. Figure 2 As described in , when a heating unit and a controller corresponding to each substrate area are required, the volume of the device has increased. In addition, the filter required to block high-frequency power in the heating unit is expensive, and thus it is inefficient.

[0072] Figure 3 is a schematic diagram illustrating a substrate temperature control unit 700 according to an embodiment.

[0073] refer to Figure 3 The substrate temperature control unit 700 includes a support plate (also referred to as a substrate support assembly) 200 , a heating unit 225 , a power supply unit (also referred to as a second power supply) 225 a , a switch unit 710 , and a controller 720 .

[0074] The support plate 200 supports the substrate W. The plurality of heating units 225 are placed in different regions of the support plate 200 , and control the temperature of the substrate W.

[0075] The power supply unit 225a provides power to control the temperature of the substrate. In an embodiment, the power supply unit 225a may provide AC power.

[0076] The switch unit 710 is connected between the power supply unit 225a and the heating unit 225. In an embodiment, the switch unit 710 may include one or more transistor devices. The transistor device may be a MOSFET or a BJT (bipolar junction transistor). The switch unit 710 composed of a MOSFET is explained below.

[0077] The controller 720 controls the switch unit 710, thereby controlling each of the plurality of substrate regions. The switch unit 710 may include a plurality of MOSFET channels corresponding to the plurality of heating units, respectively. The controller 720 may selectively open the plurality of MOSFET channels.

[0078] In an embodiment, the substrate temperature control unit 700 may further include a sensor unit (not described) for detecting temperature distribution information of the substrate. The controller 720 may heat or cool each region according to the temperature distribution information. The controller 720 may open a MOSFET channel corresponding to a substrate region to be heated. The controller 720 may close a MOSFET channel corresponding to a substrate region to be cooled.

[0079] Compare Figure 2 and Figure 3 , the existing device requires a controller and a filter in each area, but according to an embodiment of the present concept, the number of the power supply unit 225a, the controller 720, and the first filter 730 can be reduced using the switch unit 710.

[0080] Reference again Figure 3 , the substrate temperature control unit 700 may include a first filter 730 and a second filter 740 .

[0081] The first filter 730 may be connected between the power supply unit 225a and the switch unit 710. To prevent coupling due to high frequency power required during a plasma process flowing into the power supply unit 225a, the first filter 730 may block a high frequency power signal flowing into the power supply unit 225a.

[0082] In an embodiment, the first filter 730 may be a band pass filter or a band stop filter. For example, the first filter 730 may include an adjustable capacitor or an adjustable inductor.

[0083] A second filter 740 may be provided between the switch unit 710 and the controller 720. The second filter 740 may also block high frequency power signals and prevent high frequency power from flowing into the controller 720.

[0084] In an implementation, the second filter 740 may include a ferrite core. The ferrite core may be installed around a wire connecting the switch unit 710 and the controller 720, whereby it may block high frequency power signals.

[0085] The first filter 730 and the second filter 740 block high-frequency power signals, but allow the AC power signal provided by the power supply unit 225a to pass through. According to an embodiment, the first filter 730 and the second filter 740 may block high-frequency power signals exceeding a predetermined frequency and allow the AC power signal below the predetermined frequency to pass through.

[0086] Figure 4 and Figure 5 is a diagram for explaining a method for controlling the temperature of a substrate W having a plurality of regions according to an embodiment.

[0087] Reference Figure 4 , the substrate W may include a first region A1, a second region A2, a third region A3, and a fourth region A4. When the error between each region and each predetermined target temperature depends on the temperature distribution of the substrate as A1 > A2 > A3 and the error of A3 is 0, the controller 720 may turn on the MOSFET channels corresponding to the first region and the second region and receive power. In addition, the controller 720 may extend the time for turning on the MOSFET channels in the first region with a larger error.

[0088] Reference Figure 5 , the substrate W may include a plurality of regions B1, B2, B3, B4, B5 divided along the circumference of the substrate W. When controlling the plurality of regions, each surface becomes larger as it is farther from the center (B1 < B2 < B3 < B4 < B4 < B5), and thus, the controller 720 may extend the time for turning on the MOSFET channels corresponding to each region.

[0089] Figure 6 is a diagram for explaining the operation of a substrate temperature control unit according to an embodiment.

[0090] Reference Figure 6 , the substrate temperature control unit may separately control the temperatures of a plurality of substrate regions H1, H2, H3, H4. The controller 720 may provide a signal to the gate of the MOSFET device and determine whether each substrate region will receive power from the power supply unit 225a or block the power supply unit 225a. Since the MOSFET can be quickly turned on / off, the controller 720 can efficiently control the temperature of each of the plurality of substrate regions.

[0091] Figure 7 is an exemplary flowchart showing a method 800 for controlling a substrate processing apparatus according to an embodiment.

[0092] Reference Figure 7, the substrate processing apparatus control method 800 includes: detecting temperature distribution information of a substrate including a plurality of regions (S810); determining which MOSFET channel to open based on the temperature distribution information (S820); and controlling the plurality of MOSFETs based on the determination of the controller (S830). The controller may selectively apply a signal to the MOSFET gate and control the temperature of the plurality of substrate regions per region.

[0093] The above-mentioned substrate temperature control method may be provided as a computer program and executed by an application, and stored in a computer-readable recording medium.

[0094] The computer-readable recording medium may be a volatile memory: SRAM (static RAM), DRAM (dynamic RAM), SDRAM (synchronous DRAM), or a non-volatile memory: ROM (read-only memory), PROM (programmable ROM), EPROM (electrically programmable ROM), EEPROM (electrically erasable programmable ROM), flash memory, PRAM (phase change RAM), MRAM (magnetic RAM), PRAM (resistive RAM), FRAM (ferroelectric RAM), or a floppy disk, or a hard disk, or an optical reader (e.g., CD-ROM, DVD), but is not limited thereto.

[0095] The foregoing detailed description may be only an example of an embodiment. In addition, the above content only shows and describes a preferred embodiment, and other embodiments may include various combinations, changes and environments. That is, it should be understood by those skilled in the art that substitutions, modifications and changes may be made in these embodiments without departing from the scope principles and spirits defined in the attached claims and their equivalents. In addition, it is not intended that the scope of the application be limited to these specific embodiments or their specific features or benefits. Instead, it is intended that the scope of the application be limited only by the attached claims and their equivalents.

Claims

1. A substrate temperature control device, the substrate temperature control device being used in a substrate processing device, the substrate processing device comprising a plasma generating unit, the plasma generating unit being used to make a supplied gas into a plasma state, and comprising a high-frequency power supply for providing high-frequency power and a plurality of coils electrically connected to the high-frequency power supply and receiving the high-frequency power to induce a time-varying magnetic field, the substrate temperature control device include: A support plate, used for supporting a substrate; A plurality of heating units are placed in different areas of the substrate and control the temperature of the substrate in each area; a power supply unit for providing power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit and comprising one or more transistor devices; as well as a controller for controlling the power supplied to each heating unit by controlling the switch unit, The substrate temperature control device further comprises: a first filter connected between the power supply unit and the switch unit, and blocking the high-frequency power signal caused by the time-varying magnetic field flowing into the power supply unit; and a second filter arranged between the switch unit and the controller, and blocking the high-frequency power signal caused by the time-varying magnetic field flowing into the controller, wherein the second filter comprises a ferrite core, and The transistor device includes a MOSFET device, the switch unit includes a plurality of MOSFET channels respectively corresponding to the plurality of heating units, the substrate temperature control device further includes a sensor unit for detecting temperature distribution information of the substrate, wherein the controller opens the MOSFET channel corresponding to the substrate area to be heated and closes the MOSFET channel corresponding to the substrate area to be cooled according to the temperature distribution information to control the temperature of the plurality of substrate areas per area, wherein the power supply unit provides AC power below a predetermined frequency, and the first filter and the second filter block high frequency power signals above a predetermined frequency and allow AC power signals below a predetermined frequency to pass through, wherein the substrate includes a plurality of regions divided along a circumference of the substrate, and The farther the heated area of ​​the substrate is from the center of the substrate, the longer the controller controls the opening time of the MOSFET channel.

2. A substrate processing device, include: a chamber for providing a substrate processing space therein; A substrate support assembly, used for supporting the substrate and placing it in the chamber; a gas supply unit, configured to supply gas into the chamber; a plasma generating unit for making the gas into a plasma state, and comprising a high frequency power supply for supplying high frequency power and a plurality of coils electrically connected to the high frequency power supply and receiving the high frequency power to induce a time-varying magnetic field; as well as A substrate temperature control unit, used to control the temperature of the substrate, Wherein, the substrate temperature control unit comprises: a plurality of heating units disposed in different regions of the substrate and controlling the temperature of the substrate per region; a power supply unit for providing power to control the temperature of the substrate; a switch unit connected between the plurality of heating units and the power supply unit and including one or more transistor devices; and a controller for controlling the power supplied to each heating unit by controlling the switch unit, The substrate temperature control device further comprises: a first filter connected between the power supply unit and the switch unit, and blocking the high-frequency power signal caused by the time-varying magnetic field flowing into the power supply unit; and a second filter arranged between the switch unit and the controller, and blocking the high-frequency power signal caused by the time-varying magnetic field flowing into the controller, wherein the second filter comprises a ferrite core, and The transistor device includes a MOSFET device, the switch unit includes a plurality of MOSFET channels respectively corresponding to the plurality of heating units, the substrate temperature control device further includes a sensor unit for detecting temperature distribution information of the substrate, wherein the controller opens the MOSFET channel corresponding to the substrate area to be heated and closes the MOSFET channel corresponding to the substrate area to be cooled according to the temperature distribution information to control the temperature of the plurality of substrate areas per area, wherein the power supply unit provides AC power below a predetermined frequency, and the first filter and the second filter block high frequency power signals above a predetermined frequency and allow AC power signals below a predetermined frequency to pass through, The substrate includes a plurality of regions divided along the circumference of the substrate, and The farther the heated area of ​​the substrate is from the center of the substrate, the longer the controller controls the opening time of the MOSFET channel.

3. A method for controlling the substrate processing apparatus according to claim 2, include: detecting temperature distribution information of the substrate including a plurality of regions; as well as The switching unit is controlled based on the temperature distribution information.

4. The method according to claim 3, in, Controlling the switch unit based on the temperature distribution information includes: determining a region for providing power based on the temperature distribution information; and A MOSFET channel corresponding to the determined area of ​​the substrate is turned on.

5. The method according to claim 3, in, Controlling the switch unit based on the temperature distribution information includes: determining a region for providing power based on the temperature distribution information; and Different signals are applied to the gates of the MOSFETs corresponding to the determined areas of the substrate and to the gates of the remaining MOSFETs corresponding to the remaining determined areas.

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