Method of manufacturing a display device and etching solution

Abstract

A method and etching solution for manufacturing a display device in a chamber in which a yttrium-containing material is coated on the inner surface are disclosed. The method includes the steps of: forming a first layer pattern on a substrate by dry etching; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing the second layer pattern by using the photoresist pattern as an etching mask; and performing an additional acid etching process by using an etching solution comprising at least one of hydrochloric acid, sulfuric acid, and nitric acid after dry etching to form the first layer pattern and before forming the photoresist pattern on the second layer material.

Description

[0001] This application claims priority to Korean Patent Application No. 10-2020-0046071, filed on April 16, 2020, with the Korean Intellectual Property Office, the entire contents of which are incorporated herein by reference. Technical Field

[0002] Exemplary embodiments of the present invention relate to a method of manufacturing a display device, and more specifically, to a method of manufacturing a display device including a process for removing yttrium-containing materials. Background Technology

[0003] Display devices are manufactured in a vacuum chamber using multiple processes, including dry etching and exposure processes. In the dry etching process, material removed from one area is re-deposited onto another area, which can cause defects in subsequent processes (e.g., in the exposure process).

[0004] As the pixel size of display devices decreases, the required precision in each process increases. Therefore, without addressing the aforementioned re-deposition problem, the defect rate will increase with existing conventional processes. Summary of the Invention

[0005] An exemplary embodiment of the present invention provides a method for manufacturing a display device in which defects caused by yttrium-containing materials do not occur.

[0006] As a method for manufacturing a display device in a chamber in which a material containing yttrium is coated on the inner surface, the method for manufacturing a display device according to an exemplary embodiment of the present invention includes the following steps: forming a first layer pattern on a substrate by dry etching; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing the second layer pattern by using the photoresist pattern as an etching mask; and performing an additional acid etching process by using an etching solution comprising at least one of hydrochloric acid, sulfuric acid, and nitric acid after the step of dry etching to form the first layer pattern and before the step of forming the photoresist pattern on the second layer material.

[0007] The step of forming a photoresist pattern on the second layer material may include depositing the photoresist material and completing the photoresist pattern by exposing the photoresist material.

[0008] An additional acid etching process can be performed before the step of completing the photoresist pattern by exposing the photoresist material.

[0009] An additional acid etching process can be performed between the step of depositing the photoresist material and the step of completing the photoresist pattern by exposing the photoresist material.

[0010] The step of forming a first layer pattern by dry etching may include the following steps: depositing a first layer material on a substrate; depositing a first photoresist on the first layer material; and exposing the first photoresist to complete the first photoresist pattern.

[0011] It may also include removing or cleaning any remaining first photoresist pattern on the first layer after completing the first layer pattern.

[0012] An additional acid etching process can be performed before the step of removing or cleaning the first photoresist pattern.

[0013] Additional acid etching processes can be performed together with the step of removing or cleaning the first photoresist pattern.

[0014] The first and second layer patterns can each be independently conductive, semiconductor, or insulating layers.

[0015] An additional acid etching process can remove the first yttrium compound generated by yttrium coated on the inner surface of the chamber.

[0016] The first yttrium compound could be Y₂O₃.

[0017] The carrier substrate attached to the substrate is disposed below the substrate, and a first yttrium compound can be formed on the rear or rear edge portion of the carrier substrate during dry etching.

[0018] The first yttrium compound can be converted into the second yttrium compound YF3 during the cleaning process.

[0019] The first layer pattern can be a semiconductor layer, the second layer pattern can be a gate conductive layer, and the manufacturing method can further include the following steps: forming a first gate insulating layer disposed between the semiconductor layer and the gate conductive layer; forming a second gate insulating layer covering the gate conductive layer; and forming a third layer pattern on the second gate insulating layer by using a third layer mask as a photomask, wherein an additional acid etching process can be further performed after the second layer patterning step and before the step of exposing with the third layer mask to form the third layer pattern.

[0020] All conductive layers, including those in the conductive layer of the display device, can be formed closer to the substrate than the anode by dry etching, and the anode can be formed by wet etching.

[0021] An etching solution according to an exemplary embodiment of the present invention comprises at least one of nitric acid with a weight percentage concentration of about 20% or less, sulfuric acid with a weight percentage concentration of about 20% or less, and hydrochloric acid with a weight percentage concentration of about 20% or less, wherein the etching solution is used to prevent defect formation by removing yttrium compounds after a dry etching process.

[0022] The weight percentage concentration of nitric acid can range from about 5% to about 10%.

[0023] The weight percentage concentration of sulfuric acid can range from about 2% to about 8%.

[0024] The etching solution may also include phosphoric acid or acetic acid, and the weight percentage concentration of phosphoric acid or acetic acid may be from about 10% to about 20%.

[0025] Yttrium compounds can be Y₂O₃ or YF₃.

[0026] A method for manufacturing a display device according to an exemplary embodiment of the present invention includes the following steps: providing a chamber in which an inner surface is coated with a material comprising yttrium; forming a first layer pattern on a substrate in the chamber by dry etching; depositing a second layer material on the first layer pattern; performing an acid etching process with an etching solution before or after depositing the second layer material, the etching solution comprising at least one of the following: nitric acid with a weight percentage concentration of about 20% or less; sulfuric acid with a weight percentage concentration of about 20% or less; and hydrochloric acid with a weight percentage concentration of about 20% or less; and performing a photolithography process on the second layer material, followed by a dry etching process or a wet etching process to form the second layer pattern.

[0027] According to an exemplary embodiment of the present invention, after a yttrium-containing material is formed on the side surface of a glass substrate during dry etching, even if the yttrium-containing material is formed to be more easily dispersed in a cleaning process, a cleaning solution containing acid is added in an additional etching process so that defect patterns such as short circuits caused by the yttrium-containing material are not formed. Attached Figure Description

[0028] The invention will be more clearly understood from the following description of exemplary embodiments in conjunction with the accompanying drawings, in which:

[0029] Figure 1 This is a flowchart illustrating a method for manufacturing a display device according to an exemplary embodiment of the present invention;

[0030] Figure 2 This is a diagram illustrating a process of forming a yttrium-containing material on the lower surface of a glass substrate according to an exemplary embodiment of the present invention;

[0031] Figure 3 This is a diagram illustrating whether or not yttrium-containing materials are removed, according to a comparative example and an exemplary embodiment of the present invention;

[0032] Figure 4 This is a diagram illustrating the removal of yttrium-containing materials according to an exemplary embodiment of the present invention;

[0033] Figures 5A to 5HThese are cross-sectional views showing a method for manufacturing a display device according to an exemplary embodiment of the present invention;

[0034] Figures 6A to 6D These are cross-sectional views showing a method for manufacturing a display device according to an exemplary embodiment of the present invention;

[0035] Figures 7A to 7D These are cross-sectional views showing a method for manufacturing a display device according to an exemplary embodiment of the present invention; and

[0036] Figures 8 to 11 Each of these is a flowchart illustrating a method for manufacturing a display device according to an exemplary embodiment of the present invention.

[0037] because Figures 1 to 11 The accompanying drawings are intended for illustrative purposes, and therefore the elements in the drawings need not be drawn to scale. For example, some elements may be enlarged or exaggerated for clarity. Detailed Implementation

[0038] The invention will be described more fully below with reference to the accompanying drawings, in which exemplary embodiments of the invention are illustrated. As those skilled in the art will recognize, the described exemplary embodiments may be modified in various ways without departing from the spirit or scope of the invention.

[0039] To clearly explain the invention, parts not directly related to the invention have been omitted, and the same reference numerals throughout the specification refer to the same or similar constituent elements.

[0040] It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, the element may be directly on the other element, or there may be intermediate elements present. Conversely, when an element is referred to as being "directly on" another element, there are no intermediate elements present. Furthermore, in the specification, the terms "on" or "above" indicate positioning on or below the target portion, and do not necessarily indicate positioning on the upper side of the target portion based on the direction of gravity.

[0041] Throughout the specification, the phrase "at least one of a, b, and c" means only a, only b, only c, both a and b, both a and c, both b and c, all of a, b, and c, or variations thereof. "At least one of A and B" is used herein to mean selecting only A, selecting only B, or selecting both A and B.

[0042] Unless explicitly stated otherwise, the word “including” and its variations shall be understood to mean that the stated elements are included, but not that any other elements are excluded.

[0043] In the instruction manual, the phrase "in a plan view" means when the target part is viewed from above, and the phrase "in a sectional view" means when the target part is viewed from the side as a section cut vertically.

[0044] As used herein, the term “about” includes the stated value and means within an acceptable range of deviation from the specific value, as determined by a person of ordinary skill in the art considering the measurement in question and the error associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, “about” may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.

[0045] In the following text, refer to Figure 1 A method for manufacturing a display device according to an exemplary embodiment of the present invention is described.

[0046] Figure 1 This is a flowchart illustrating a method for manufacturing a display device according to an exemplary embodiment of the present invention.

[0047] exist Figure 1 This description focuses only on a portion of the steps involved in manufacturing a display device, and primarily illustrates exemplary embodiments of the invention based on the steps of forming a first layer and forming a second layer covering the first layer. Both the first and second layer patterns can be conductive layers, semiconductor layers, or insulating layers.

[0048] First, a first layer of material is deposited on the substrate to form a first layer pattern (S10). Here, the first layer pattern can be one of various layers (e.g., conductive layer, semiconductor layer, and insulating layer) formed by dry etching.

[0049] A first photoresist material is deposited on a first layer of material (S20). Next, the deposited first photoresist material is exposed to complete a first photoresist pattern (S30). For example, the deposited first photoresist material can undergo a photolithography process including, for example, exposure, baking, and development processes to form the first photoresist pattern. In the exposure step, the deposited first photoresist material can be exposed by radiation such as light through the pattern on a photomask. The combination of the steps of depositing the first photoresist material (S20) and completing the first photoresist pattern (S30) is referred to as the first exposure process (S20 and S30).

[0050] The first photoresist pattern is used as an etching mask to dry etch the first layer material to complete the first layer pattern (S40). For example, the dry etching process used to complete the first layer pattern can be a reactive ion etching (RIE) process. Reactive ions can etch away the deposited first layer material not covered by the first photoresist pattern, while completely preserving the area covered by the first photoresist pattern to form the first layer pattern.

[0051] After the dry etching process, some or most of the first photoresist pattern may be exhausted. To prevent the first photoresist pattern from remaining on the completed first layer pattern, a process of removing or cleaning the first photoresist pattern is performed (S50). To remove the first photoresist pattern, a liquid such as a stripping agent can be used to remove the first photoresist pattern by wet processing. Alternatively, the photoresist can be removed while performing cleaning using a cleaning solution. According to an exemplary embodiment of the present invention, only the process of removing the photoresist pattern may be performed, only the cleaning process may be performed, or the cleaning process may be performed after removing the photoresist pattern.

[0052] To form a second layer pattern on the completed first layer pattern, a second layer material covering the first layer pattern is deposited (S60). Here, the second layer pattern can be one of various layers (e.g., a conductive layer, a semiconductor layer, and an insulating layer) according to exemplary embodiments of the present invention, and the second layer pattern can be formed thereon after the insulating layer covering the completed first layer pattern is placed. At this time, the step of depositing the second layer material can be performed after the insulating layer covering the completed first layer pattern is formed (S60).

[0053] A second photoresist material is deposited on the second layer of material (S70), and the second photoresist material is exposed to complete the second photoresist pattern (S80). For example, the deposited second photoresist material can undergo a photolithography process including, for example, exposure, baking, and development processes to form the second photoresist pattern. In the exposure step, the deposited second photoresist material can be exposed by radiation such as light through the pattern on a photomask. The sum of depositing the second photoresist material (S70) and completing the second photoresist pattern (S80) is referred to as the second exposure process (S70 and S80).

[0054] In an exemplary embodiment of the present invention, an additional acid etching process (S100) is performed after the step of completing the first layer pattern by dry etching (S40) and before the second exposure process (S70 and S80). That is, according to... Figure 1The exemplary embodiments of the present invention shown herein may include an additional acid etching process (S100) performed after the first layer pattern is completed by dry etching (S40), an additional acid etching process (S100) performed directly after the step of removing or cleaning the first photoresist pattern (S50), or an additional acid etching process (S100) performed after the deposition of the second layer material (S60). The etching solution used herein is an acid etching solution containing at least one of hydrochloric acid (HCl), sulfuric acid (H2SO4), and nitric acid (HNO3), and is used to remove compounds containing yttrium (Y). For example, after dry etching to form the first layer pattern (S40) and before depositing the second photoresist material on the second layer material (S70), the additional acid etching process (S100) may be performed using an etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid. Furthermore, according to exemplary embodiments of the present invention, the additional acid etching process (S100) may be performed together with the step of removing or cleaning the first photoresist pattern (S50). In this case, an acid etching solution (including at least one of hydrochloric acid, sulfuric acid, and nitric acid) used in the additional acid etching process (S100) can be used in conjunction with a stripping agent or a cleaning solution. Additionally, in an exemplary embodiment of the invention, an additional acid etching process can be performed between depositing the second photoresist material (S70) and completing the second photoresist pattern (S80).

[0055] After the second exposure process (S70 and S80), the completed second photoresist pattern is used as an etching mask to etch the second layer material, for example, by a dry etching process or a wet etching process, to complete the second layer pattern (S90). In this case, the dry etching of the second layer material can be performed in the same manner as shown in step S40, or the wet etching of the second layer material can be performed differently from step S40.

[0056] exist Figure 1 In step S10, the first layer of material can be deposited directly on the substrate or on another layer (conductive layer, semiconductor layer, or insulating layer). The substrate can be a glass substrate or a flexible substrate made of plastic or polyimide (PI) on a carrier substrate made of glass.

[0057] After completing the second layer pattern (S90), additional layers (conductive layer, semiconductor layer, insulating layer, electrode layer, encapsulation layer, etc.) can be formed to form a display device.

[0058] exist Figure 1In this configuration, an additional insulating layer may be disposed between the first and second pattern layers. In this case, the insulating layer may not include openings for forming electrical connections between the overlying and underlying conductive layers. For example, the additional insulating layer may be configured to prevent electrical connections between two semiconductor layers, between two conductive layers, or between a semiconductor layer and a conductive layer. When openings are formed in the insulating layer, the insulating layer may be the first pattern layer.

[0059] As in an exemplary embodiment of the invention, an additional acid etching process (S100) is performed after dry etching (S40) and before the next exposure process (second exposure processes S70 and S80) to remove the yttrium (Y)-containing compound, so that no defects are generated in the second layer pattern due to the yttrium compound included in the second photoresist pattern.

[0060] In the following text, reference will be made to Figure 2 This section describes in detail the use of materials such as compounds containing yttrium (Y) in the manufacturing process of display devices.

[0061] Figure 2 This is a diagram illustrating a process of forming a yttrium (Y)-containing material on the lower surface of a glass substrate according to an exemplary embodiment of the present invention.

[0062] Various deposition processes, etching processes, etc., for manufacturing display devices are performed in a chamber formed into a vacuum state. A material containing yttrium (Y) (e.g., yttrium (Y)) can be coated on the inner surface of the chamber to extend the chamber's lifespan and allow for long-term use. In this exemplary embodiment, the yttrium (Y)-containing material used during coating can also be a first yttrium compound (Y₂O₃), such as yttrium oxide (Y₂O₃).

[0063] The coated yttrium 1200 is shown in Figure 2 In (A) of the middle.

[0064] exist Figure 2In (A), a chamber is simply shown, comprising a support portion 1000 supporting a carrier substrate 500 and an exposed portion 1100 not covered by the carrier substrate 500 (hereinafter referred to as the exposed portion). Additionally, a process is performed to deposit and etch each layer on the upper surface of the carrier substrate 500 to form a display device; the carrier substrate 500 is formed of glass. According to an exemplary embodiment of the invention, to form a flexible display device, each layer can be formed on the flexible substrate after further forming a flexible substrate of plastic or polyimide (PI) material on the upper surface of the carrier substrate 500. In an exemplary embodiment of the invention, the carrier substrate 500 can be a rigid substrate and can be used as a flexible substrate of plastic or polyimide (PI) material carried thereon both inside and outside the chamber. Thereafter, the flexible substrate and the overlay layer can be separated from the carrier substrate 500 to form a flexible display device.

[0065] The inner surface of the chamber is entirely coated with a yttrium-containing material such as yttrium, therefore the upper surface of the exposed portion 1100 is coated with yttrium 1200 (or a first yttrium compound (Y2O3)). In dry etching processes ( Figure 2 During (A) of the process, when the upper surface of the carrier substrate 500 is etched, yttrium of the exposed portion 1100 is also sputtered, and a first yttrium compound (Y2O3) is deposited on the rear portion or the rear edge portion of the carrier substrate 500. For example, in Figure 1 In an exemplary embodiment, when the first photoresist pattern is used as an etching mask to dry etch the first layer material to complete the first layer pattern (S40), a first yttrium compound (Y2O3) is deposited on the rear part or the rear edge portion of the carrier substrate 500.

[0066] like Figure 2 As shown in (B), during a wet process such as a cleaning process, the first yttrium compound (Y₂O₃) deposited on the rear or rear edge portion of the carrier substrate 500 reacts with a cleaning solution (e.g., BOE (buffered oxide etchant)) and then becomes readily separable (or detachable) from the carrier substrate 500, simultaneously transforming into a second yttrium compound 1250 (YF₃) (e.g., yttrium fluoride (YF₃)). The BOE cleaning solution is a buffered hydrofluoric acid (HF) mixture. See more details. Figure 2 The chemical reaction shown in (B) performs cleaning simultaneously with the removal of the silicon oxide (SiO2) layer because the BOE cleaning solution contains HF and ammonium fluoride (NH4F). HF reacts with the first yttrium compound (Y2O3) to convert it into a second yttrium compound 1250 (YF3) and water (H2O). Consequently, the second yttrium compound 1250 (YF3) exhibits the property of being more easily separated from the support substrate 500 than the first yttrium compound (Y2O3).

[0067] The second yttrium compound 1250 (YF3) separates from the carrier substrate 500 and disperses in subsequent processes, causing defects in those processes. These defects can lead to incorrect formation of the photoresist pattern during the exposure process, or, in other cases, cause electrical connection (short circuit) between the two conductive layers when the defect is located in a portion of the formed conductive layer pattern that lacks a conductive layer.

[0068] Figure 2 The first yttrium compound (Y₂O₃) and the second yttrium compound 1250 (YF₃) are shown, but various yttrium compounds can be included in the process by changing the yttrium compound coated on the chamber or the cleaning solution used for cleaning. Therefore, it is desirable to have a process capable of removing various compounds containing yttrium (Y) to eliminate defects that may occur in subsequent processes.

[0069] like Figure 1 As shown, an additional acid etching process (S100) is performed until the next exposure process (second exposure processes S70 and S80) following dry etching (S40). Figure 1 In the dry etching step S40, a first yttrium compound (Y₂O₃) is deposited on the rear portion or the rear edge portion of the carrier substrate 500. The etching solution used at this time is an acid etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid, as described above. Figure 3 and Figure 4 Describe the effect of removing the compound layer containing yttrium (Y).

[0070] Figure 3 This is a diagram illustrating whether or not yttrium (Y)-containing materials are removed, according to a comparative example and exemplary embodiment of the present invention. Figure 4 This is a diagram illustrating the removal of yttrium (Y)-containing material according to an exemplary embodiment of the present invention.

[0071] first, Figure 3 Experimental results are shown on whether the yttrium compound layer (Y film) can be removed by using various acids.

[0072] Figure 3 The Y film shown represents the deposited second yttrium compound YF3, and Figure 3 These are experimental results based on the removal characteristics of the second yttrium compound, YF3.

[0073] Figure 3 This demonstrates whether the yttrium compound layer (Y film) is removed after wet etching for 120 seconds using an etching solution containing phosphoric acid (H3PO4), acetic acid (CH3COOH), hydrochloric acid (HCl), sulfuric acid (H2SO4), and nitric acid (HNO3), with each acid at a concentration of 5 wt%. That is, in Figure 3In this context, "initial" refers to the period before the additional acid etching process (S100), "5% 120 seconds" means after 120 seconds of wet etching with each acid used at a concentration of 5 wt%, and "SEM" means a SEM (scanning electron microscope) image taken after 120 seconds of wet etching with each acid used at a concentration of 5 wt%. "Removal X" means the Y film was not removed, and "Removal O" means the Y film was removed.

[0074] When the etching solution contains hydrochloric acid, sulfuric acid and / or nitric acid, it can be confirmed that the yttrium compound layer (Y film) is removed; however, when an etching solution containing only phosphoric acid or acetic acid is used, it can be confirmed that the yttrium compound layer (Y film) remains.

[0075] based on Figure 3 The results confirm that the etching solution used in the additional acid etching process (S100) should include at least one of hydrochloric acid, sulfuric acid, and nitric acid. When one of hydrochloric acid, sulfuric acid, and nitric acid is included, phosphoric acid or acetic acid may be additionally included.

[0076] like Figure 4 As shown, based on Figure 3 The experimental results, conducted while varying the weight percentage concentration (or wt% concentration, concentration (wt%)), are based on the results of experiments involving nitric acid, sulfuric acid, and nitric acid, including sulfuric acid, phosphoric acid, and acetic acid. Figure 4 In. That is, in Figure 4 Each of the etching solutions used in the experiments shown includes nitric acid.

[0077] Figure 4 The etching solutions used are of three types: the etching solution of the first exemplary embodiment has 7% wt% nitric acid and 5% wt% sulfuric acid; the etching solution of the second exemplary embodiment has 7.5% wt% nitric acid; and the etching solution of the third exemplary embodiment has 15% wt% phosphoric acid, 6.5% wt% nitric acid and 15% wt% acetic acid.

[0078] exist Figure 4 In the diagram, after showing the yttrium compound layer (Y film) disposed on the far left before etching, each exemplary embodiment with specific components is shown after etching the yttrium compound layer (Y film) under specific conditions.

[0079] First, the etching solution (7% wt% nitric acid and 5% wt% sulfuric acid) of the first exemplary embodiment was used to etch the yttrium compound layer (Y film) at 40°C for 52 seconds (s), and it can be confirmed that the yttrium compound layer (Y film) was removed.

[0080] In the second exemplary embodiment, the etching solution (7.5% wt% nitric acid) was used after etching the yttrium compound layer (Y film) at 40°C for 60 seconds (s), and it was confirmed that the yttrium compound layer (Y film) was removed.

[0081] The etching solution (15% wt% phosphoric acid, 6.5% wt% nitric acid and 15% wt% acetic acid) in the third exemplary embodiment was used to etch the yttrium compound layer (Y film) at 40°C for 60 seconds (s), and it can be confirmed that the yttrium compound layer (Y film) has been removed.

[0082] according to Figure 4 Experimental results show that, in the case of nitric acid, the yttrium compound layer (Y film) can be easily removed even when the concentration is only about 6% to about 8% by weight. If the nitric acid concentration is about 20% by weight or less, the yttrium compound can be sufficiently removed by etching; similarly, if the concentrations of sulfuric acid and hydrochloric acid by weight are less than about 20% corresponding to nitric acid, the yttrium compound can also be sufficiently removed by etching. For example, etching solutions of one or more of the aforementioned acids at the above-mentioned wt% concentrations can be used to prevent defect formation by removing the yttrium compound after a dry etching process.

[0083] based on Figure 4 In each exemplary embodiment, the etching solution may include about 5% to about 10% wt% nitric acid and about 2% to about 8% wt% sulfuric acid. Furthermore, according to an exemplary embodiment of the invention, the etching solution may include about 5% to about 10% wt% nitric acid, and further, according to an exemplary embodiment of the invention, in addition to about 5% to about 10% wt% nitric acid, it may include about 10% to about 20% wt% phosphoric acid and acetic acid, respectively.

[0084] In the following text, we will examine the details in more detail. Figure 1 The process is fully shown in the text.

[0085] First of all, Figures 5A to 5H The present invention is described in the figure below, wherein a conductive layer is used as a first layer pattern and a second layer pattern, and an insulating layer 250 is disposed therebetween. Figures 5A to 5H In accordance with an exemplary embodiment of the present invention, the first layer pattern or the second layer pattern may be a semiconductor layer. Figures 5A to 5H In accordance with an exemplary embodiment of the present invention, each of the first layer pattern and the second layer pattern may be a semiconductor layer.

[0086] Figures 5A to 5H These are cross-sectional views showing a method for manufacturing a display device according to an exemplary embodiment of the present invention.

[0087] first, Figure 5AThe following steps are illustrated: In this step, a first layer of material 210 is deposited on a substrate 100, then a first photoresist material 215 is deposited on the first layer of material 210, and the first photoresist material 215 is exposed using a first mask 220. For example, the first photoresist material 215 can be exposed to radiation (light) through the first mask 220.

[0088] Some areas of the first photoresist material 215 receive light upon exposure, causing a change in its properties. During development, the first photoresist material 215 in these areas may be removed or retained depending on the changed properties. For example, the first photoresist material 215 may be a positive tonephotoresist material that is removed after development, or a negative tonephotoresist material that is retained after development. Figure 5B This shows the situation after the first photoresist pattern 216 is completed by the developing process. Figure 5B In an exemplary embodiment, it can be confirmed that the exposed first photoresist material 215 is retained after the development process. For example, the first photoresist material 215 may be a negative photoresist material, such that the exposed portion is retained after the development process.

[0089] like Figure 5C As shown, the first layer pattern 200 is completed by dry etching the first layer material 210 using the first photoresist pattern 216 as an etching mask. At this time, the first photoresist pattern 216 is also dry etched and its height is reduced. Therefore, the remaining first photoresist 216' is disposed on the first layer pattern 200.

[0090] like Figure 5D As shown, if the remaining first photoresist 216' is removed using a stripping liquid as an etchant in a wet chemical etching process, only the completed first layer pattern 200 is retained. Alternatively, the remaining first photoresist 216' can be removed by a plasma ashing process as a dry etching process.

[0091] Next, as Figure 5E As shown, an insulating layer 250 is deposited on the completed first layer pattern 200. Next, as... Figure 5F As shown, a second layer of material 310 is deposited on the insulating layer 250. Here, the insulating layer 250 can be an inorganic insulating layer or an organic insulating layer. In the case of an inorganic insulating layer, the insulating layer 250 can include silicon oxide (SiO2) or silicon nitride (Si3N4). In addition, multiple layers can be formed by including layers containing silicon oxide (SiO2) and layers containing silicon nitride (Si3N4), respectively.

[0092] Next, as Figure 5G As shown, a second photoresist material 315 is deposited on the second layer material 310, and then the second photoresist material 315 is exposed using a second mask 320 as a photomask. For example, the second photoresist material 315 can be exposed with radiation (light) through the second mask 320. In this exemplary embodiment, the exposed area of ​​the second photoresist material 315 is retained to form a second photoresist pattern 316. For example, the second photoresist material 315 can be a negative photoresist material.

[0093] Next, as Figure 5H As shown, the second photoresist pattern 316 is used as an etching mask to etch the second layer material 310 to complete the second layer pattern 300.

[0094] In an exemplary embodiment of the present invention, Figure 5C After the process and in Figure 5G An additional acid etching process is performed before the exposure process. For example, after dry etching the first layer material 210 using the first photoresist pattern 216 as an etching mask and before depositing the second photoresist material 315 on the second layer material 310, an additional acid etching process can be performed. The time required to perform the additional acid etching process can be... Figure 5C After the process, in Figure 5E After the process or Figure 5F After the process. For example, in Figure 5C After the process, the remaining first photoresist 216' is wet etched and removed by a stripping agent, etc. At this time, the yttrium compound can be removed by adding an acid etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid. For example, the photoresist stripping process can be combined with an additional acid etching process so that the yttrium compound can be removed during the process of removing the remaining first photoresist 216'. Alternatively, the step of removing the remaining first photoresist 216' by using a stripping agent and the additional acid etching process can be performed separately.

[0095] With this additional acid etching process, even if yttrium compounds are formed at the rear or rear edge portion of the carrier substrate 500 disposed below the substrate 100 during dry etching, the yttrium compounds are removed and no defects caused by yttrium compounds occur in subsequent processes.

[0096] exist Figure 5H After the process, the remaining second photoresist pattern 316 can be removed by a stripping agent.

[0097] When etching the second layer material 310, in the case of dry etching, in order to remove defects caused by yttrium compounds in subsequent steps, it is possible to... Figure 5H Following the initial process, an additional acid etching process is performed to remove the yttrium compound using an etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid. Alternatively, the yttrium compound can be removed using a stripping agent containing an acid etching solution in which at least one of hydrochloric acid, sulfuric acid, and nitric acid is added. Figure 5H The remaining second photoresist pattern 316 after the process allows the yttrium compound to be removed simultaneously.

[0098] exist Figures 5A to 5H In this embodiment, the first layer pattern 200 is directly disposed on the substrate 100. However, according to an exemplary embodiment of the present invention, an additional layer or multiple additional layers may be disposed between the substrate 100 and the first layer pattern 200.

[0099] A carrier substrate 500 is disposed beneath the substrate 100, enabling movement of the substrate 100 and each layer formed on the substrate 100 both indoors and outdoors. Here, the carrier substrate 500 may be a glass material, and the substrate 100 used in the display device may be a glass material or a flexible material such as plastic or polyimide (PI). In exemplary embodiments of the invention, the carrier substrate 500 may be a rigid substrate, and the substrate 100 may be a flexible substrate. However, the invention is not limited thereto.

[0100] In the following text, refer to Figures 6A to 6D An exemplary embodiment of the present invention is described, wherein the second layer pattern 300 is an insulating layer, and the first layer pattern 200 may be a conductive layer or a semiconductor layer.

[0101] Figures 6A to 6D These are cross-sectional views showing a method for manufacturing a display device according to an exemplary embodiment of the present invention.

[0102] Figure 6A It shows that it is related to Figure 5D The steps are similar to those for forming the completed first layer pattern 200 on the substrate 100. Therefore, the process for forming the completed first layer pattern 200 can be compared with... Figures 5A to 5C The process is the same, and to keep it simple and avoid repetition, the process of forming the first layer pattern 200 is omitted.

[0103] Next, as Figure 6B As shown, an insulating layer 250 is formed to cover the first layer pattern 200. Here, the insulating layer 250 can be an inorganic insulating layer or an organic insulating layer. In the case of an inorganic insulating layer, the insulating layer 250 can include silicon oxide (SiO2) or silicon nitride (Si3N4). In addition, multiple layers can be formed by including layers containing silicon oxide (SiO2) and layers containing silicon nitride (Si3N4), respectively.

[0104] Next, as Figure 6C As shown, a photoresist material 255 for the insulating layer 250 is deposited and exposed using a mask 260. For example, the photoresist material 255 can be a negative photoresist material and can be exposed with radiation (light) through the mask 260.

[0105] Next, as Figure 6D As shown, the photoresist material 255 used for exposure of the insulating layer 250 is developed to form an insulating layer photoresist pattern 256, and the insulating layer 250 is etched using the insulating layer photoresist pattern 256 as an etching mask to form an opening 257. A portion of the first layer pattern 200 is exposed through the opening 257.

[0106] Subsequently, in subsequent processes, a conductive layer can be formed to contact the first layer pattern 200 through the opening 257.

[0107] In an exemplary embodiment of the present invention, after the first layer material 210 is dry-etched to form the first layer pattern 200 and in Figure 6C An additional acid etching process is performed before the main process. Figure 6C In the process, a photoresist material 255 is deposited, and then the photoresist material 255 is exposed to radiation (light) through a mask 260. Figure 6A In this process, since the photoresist is removed after dry etching, an additional acid etching process can be performed after or before the photoresist removal process, or it can be performed together with the photoresist removal process. Furthermore, as a next step... Figure 6B Before or after the process shown, i.e., before or after depositing the insulating layer 250, an additional acid etching process may be performed. In this case, the etching solution used includes at least one of hydrochloric acid, sulfuric acid, and nitric acid.

[0108] With this additional acid etching process, even if yttrium compounds are formed at the rear or rear edge portion of the carrier substrate 500 disposed below the substrate 100 during dry etching, the yttrium compounds are removed and no defects caused by yttrium compounds occur in subsequent processes.

[0109] exist Figure 6D After the process, the remaining photoresist pattern 256 is removed by a stripping agent using a stripping process.

[0110] exist Figures 6A to 6D The diagram shows a first layer pattern 200 directly disposed on the substrate 100. However, according to an exemplary embodiment of the present invention, additional layers or multiple additional layers may be disposed between the substrate 100 and the first layer pattern 200. A carrier substrate 500 may be disposed below the substrate 100.

[0111] In the following text, refer to Figures 7A to 7D An exemplary embodiment of the invention has been described, wherein a third layer is additionally formed in addition to the first and second layers. Figures 7A to 7D In this embodiment of the invention, the first layer pattern 200 is a semiconductor layer, and the second layer pattern 300 and the third layer pattern 400 are conductive layers.

[0112] Figures 7A to 7D These are cross-sectional views showing a method for manufacturing a display device according to an exemplary embodiment of the present invention.

[0113] Figure 7A It can be removed from it. Figure 5H The second photoresist pattern 316 step in the process. Therefore, after dry etching the first layer pattern 200, an additional acid etching process can be performed using an etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid.

[0114] Figure 7A The process of doping the first layer pattern 200 of a semiconductor layer using a second layer pattern 300 as an ion implantation mask is illustrated. For example, the doping process can be performed by ion implantation. Through the doping process, the first layer pattern 200, which is the semiconductor layer, is divided into doped regions (shaded areas) and undoped regions.

[0115] Next, as Figure 7B As shown, a second insulating layer 350 and a third layer material 410 are sequentially deposited. Here, the second insulating layer 350 can be an inorganic or organic insulating layer. In the case of an inorganic insulating layer, the second insulating layer 350 can include silicon oxide (SiO2) or silicon nitride (Si3N4). Furthermore, multiple layers can be formed by respectively including a layer containing silicon oxide (SiO2) and a layer containing silicon nitride (Si3N4). The third layer material 410 can be a conductor.

[0116] Next, as Figure 7C As shown, a third photoresist material 415 is deposited and exposed using a mask 420 for the third layer. For example, the third photoresist material 415 can be exposed with radiation (light) using the mask 420 for the third layer. Furthermore, for example, the third photoresist material 415 can be a negative photoresist material.

[0117] Next, as Figure 7D As shown, the exposed third photoresist material 415 is developed to form a third photoresist pattern 416, and then the third photoresist pattern 416 is used as an etching mask to etch the third layer material 410 to form a third layer pattern 400.

[0118] Reference Figure 7D The first layer pattern 200 and the second layer pattern 300 form a transistor. The second layer pattern 300 is the gate electrode. The undoped part of the first layer pattern 200 is the channel region, and the two doped parts are the source region and the drain region, respectively.

[0119] In addition, such as Figure 7D As shown, a capacitor can be formed in the area where the second layer pattern 300 and the third layer pattern 400 are superimposed.

[0120] In an exemplary embodiment of the present invention, after dry etching the second layer pattern 300 and in Figure 7C An additional acid etching process is performed before the main process. Figure 7C In the process, an exposure process is performed. For example, an additional acid etching process can be performed before depositing the third photoresist material 415. Because... Figure 7A This illustrates the removal of photoresist after dry etching. Therefore, an additional acid etching process can be performed after or before the photoresist removal process, or together with the photoresist removal process. Here, a doping process can be performed before or after the additional acid etching process. Furthermore, as... Figure 7A The subsequent steps of the process shown in the figure Figure 7B Before and after the process shown, i.e., before or after depositing the second insulating layer 350 or the third layer material 410, an additional acid etching process may be performed. The etching solution used in this case includes at least one of hydrochloric acid, sulfuric acid, and nitric acid.

[0121] With this additional acid etching process, even if yttrium compounds are formed at the rear or rear edge portion of the carrier substrate 500 disposed below the substrate 100 during dry etching, the yttrium compounds are removed and no defects caused by yttrium compounds occur in subsequent processes.

[0122] exist Figure 7D After the process, the remaining third photoresist pattern 416 is removed by a stripping agent in the stripping process.

[0123] exist Figures 7A to 7D In this embodiment, the first layer pattern 200 is directly disposed on the substrate 100. However, according to an exemplary embodiment of the present invention, an additional layer or multiple additional layers may be disposed between the substrate 100 and the first layer pattern 200. Furthermore, the carrier substrate 500 may be disposed below the substrate 100.

[0124] In the following description, the process sequence, which may include additional acid etching processes, is based on the overall process sequence of the emitting display device. The emitting display device emits light of different intensities and colors from each pixel, and this emitted light constitutes an image. Each pixel included in the emitting display device may include a light-emitting diode (LED) as a display element capable of emitting light of a specific color. In exemplary embodiments of the invention, the LED may include an organic light-emitting diode (OLED), which includes an organic material as an emitting layer. Optionally, the LED may include quantum dots and / or quantum rods as an emitting layer.

[0125] Figures 8 to 11 Each of these is a flowchart illustrating a method for manufacturing a display device according to an exemplary embodiment of the present invention.

[0126] first, Figure 8 The process sequence of the transmitting display device according to an exemplary embodiment of the present invention is shown, which can be executed... Figure 8 The process shown is followed by the formation of an emitter layer, a cathode, and an encapsulation layer.

[0127] Figure 8 The diagram illustrates each layer in the stacking order of a transmitter display device from bottom to top. The labels on the left indicate layers containing processes involving etching performed using a mask. Here, in the phrase "etching performed using a mask," the mask may refer to a photomask rather than an etching mask. In other words, "etching performed using a mask" can mean: first, a photoresist material is coated and baked; then, it is exposed through a mask that serves as a photomask; then baked again; and finally, it is developed to form a photoresist pattern; and then the photoresist pattern is used as an etching mask to perform the etching process. Figure 8 The emitting display device shown in the exemplary embodiment of the invention is an exemplary embodiment of the invention that uses a total of eight masks to form the pixel defining layer (PDL) and spacer (SPC). For example, an organic material can be deposited on the anode PXL and the organic material can be etched using the eighth mask to form the pixel defining layer (PDL) and spacer (SPC).

[0128] In the case of the emitting display device according to an exemplary embodiment of the present invention, at least one additional acid etching process may be included, and the steps to be included are determined by... Figure 8 The arrows indicate that additional acid etching processes may be added at the locations indicated by the arrows, and at least one of the locations indicated by the arrows should include an additional acid etching process to prevent defects caused by yttrium compounds formed on the rear or rear edge portions of the carrier substrate during the dry etching process. In this case, the etching solution used to remove the yttrium compounds includes at least one of hydrochloric acid, sulfuric acid, and nitric acid.

[0129] Dry etching occurs before the additional acid etching process is incorporated. Figure 8 An exemplary embodiment of the present invention is provided, wherein all etching processes, except for the anode PXL, are performed by dry etching. The etching process in forming the anode PXL can be a wet etching process.

[0130] The following describes in detail... Figure 8 The manufacturing sequence of the emission display device in an exemplary embodiment.

[0131] First, a buffer layer is integrally formed on the substrate. At this time, the substrate can be a flexible substrate such as plastic or polyimide (PI) and can be formed on the carrier substrate.

[0132] A semiconductor layer ACT is formed on a buffer layer, and dry etching is performed using a first mask. For example, a photoresist material can be deposited on the semiconductor layer ACT, and the photoresist material can be exposed to radiation (light) through the first mask, and then the photoresist material can be developed to form a photoresist pattern as an etching mask for the dry etching process. Here, according to an exemplary embodiment of the present invention, the semiconductor layer ACT may include polycrystalline semiconductors and / or oxide semiconductors.

[0133] Next, a first gate insulating layer GI1 is formed over the semiconductor layer ACT.

[0134] Then, a first gate conductive layer GAT1 is formed on the first gate insulating layer GI1, and the first gate conductive layer GAT1 is dry etched using a second mask. For example, a photoresist material can be deposited on the first gate conductive layer GAT1, and the photoresist material can be exposed with radiation (light) through the second mask, and then the photoresist material can be developed to form a photoresist pattern as an etching mask for the dry etching process.

[0135] When an exposure process follows a dry etching process, an additional acid etching process can be performed before the exposure process to remove yttrium compounds, preventing defects caused by yttrium compounds included in the photoresist pattern from forming in the layer beneath the photoresist pattern. The semiconductor layer ACT is dry etched, and an exposure process exists for dry etching the first gate conductive layer GAT1 using a second mask as a photomask, thereby performing an additional acid etching process before or after the step of forming the first gate insulating layer GI1. For example, the additional acid etching process can remove yttrium compounds formed at the rear or rear edge portions of the carrier substrate during the dry etching process forming the semiconductor layer ACT, thus preventing improper formation of the photoresist pattern during the exposure process for dry etching the first gate conductive layer GAT1. Figure 8In the diagram, the location of the additional acid etching process is indicated by an arrow and is shown pointing towards the middle of the layer representing the first gate insulating layer GI1. This indicates that the additional acid etching process can be performed before or after the step of forming the first gate insulating layer GI1.

[0136] After forming the first gate conductive layer GAT1 by dry etching, a second gate insulating layer GI2 is formed covering the first gate conductive layer GAT1.

[0137] Next, a second gate conductive layer GAT2 is formed on the second gate insulating layer GI2, and the second gate conductive layer GAT2 is dry etched using a third mask. For example, a photoresist material can be deposited on the second gate conductive layer GAT2, and the photoresist material can be exposed with radiation (light) through the third mask, and then the photoresist material can be developed to form a photoresist pattern as an etching mask for the dry etching process.

[0138] The first gate conductive layer GAT1 is dry etched, and there is an exposure process for dry etching the second gate conductive layer GAT2 by using a third mask as a photomask, thereby performing an additional acid etching process before or after the formation of the second gate insulating layer GI2.

[0139] After forming the second gate conductive layer GAT2 by dry etching, an interlayer insulating layer (ILD) is formed to cover the second gate conductive layer GAT2, and an opening is formed in the interlayer insulating layer ILD using a fourth mask. In this case, the opening is formed by dry etching. For example, a photoresist material can be deposited on the interlayer insulating layer ILD, and the photoresist material can be exposed with radiation (light) through the fourth mask, and then the photoresist material can be developed to form a photoresist pattern as an etching mask for the dry etching process. Here, the interlayer insulating layer ILD can be an inorganic insulating layer or an organic insulating layer. In the case of an inorganic insulating layer, the interlayer insulating layer ILD can include silicon oxide (SiO2) or silicon nitride (Si3N4). Furthermore, multiple layers can be formed by including layers containing silicon oxide (SiO2) and layers containing silicon nitride (Si3N4), respectively.

[0140] Since the second gate conductive layer GAT2 is dry etched, and there is an exposure process for dry etching the interlayer insulating layer (ILD) using a fourth mask as a photomask, an additional acid etching process can be performed after dry etching the second gate conductive layer GAT2 and before the exposure process using the fourth mask as a photomask. Figure 8The arrow indicating that no separate layer is formed between the second gate conductive layer GAT2 and the interlayer insulating layer ILD is shown at the boundary of the two layers, thus indicating that an additional acid etching process is performed. That is, when an arrow is placed at the boundary of the two layers, it indicates that an additional acid etching process is performed between the processes of the two layers.

[0141] After forming openings in the interlayer insulating layer (ILD), a data conductive layer (DAT) is formed by dry etching using a fifth mask. For example, a photoresist material can be deposited on the DAT, and the photoresist material can be exposed to radiation (light) through the fifth mask. The photoresist material is then developed to form a photoresist pattern as an etching mask for the dry etching process. Since the ILD is dry etched, and an exposure process exists for dry etching the DAT using the fifth mask as a photomask, an additional acid etching process can be performed after forming openings in the ILD and before performing the exposure process using the fifth mask as a photomask.

[0142] After forming the data conductive layer (DAT), an upper insulating layer (VIA) is formed, and an opening is formed in the upper insulating layer (VIA) using a sixth mask. In this case, the opening is formed by dry etching. For example, a photoresist material can be deposited on the upper insulating layer (VIA), and the photoresist material can be exposed with radiation (light) through the sixth mask, and then the photoresist material can be developed to form a photoresist pattern as an etching mask for the dry etching process. Here, the upper insulating layer (VIA) can be an inorganic insulating layer or an organic insulating layer. In the case of an inorganic insulating layer, the upper insulating layer (VIA) can include silicon oxide (SiO2) or silicon nitride (Si3N4). Furthermore, multiple layers can be formed by including layers containing silicon oxide (SiO2) and layers containing silicon nitride (Si3N4), respectively. The upper insulating layer (VIA) can be formed to be relatively thick, so that the upper layer has planar characteristics. Since the data conductive layer DAT is dry etched, and there is an exposure process for dry etching the insulating layer VIA using a sixth mask as a photomask, an additional acid etching process can be performed after the data conductive layer DAT is formed and before the exposure process is performed using the sixth mask as a photomask.

[0143] After forming an opening in the upper insulating layer VIA, the anode PXL is formed by wet etching using a seventh mask. For example, a photoresist material can be deposited on the anode PXL, and the photoresist material can be exposed with radiation (light) through the seventh mask, and then the photoresist material can be developed to form a photoresist pattern as an etching mask for the wet etching process. Since the upper insulating layer VIA is dry etched, and there is an exposure process for wet etching the anode PXL using the seventh mask as a photomask, an additional acid etching process can be performed after forming the opening in the upper insulating layer VIA and before performing the exposure process using the seventh mask as a photomask.

[0144] After forming the anode PXL, an organic material is deposited, and the organic material is etched using an eighth mask to form the pixel-defining layer (PDL) and spacer SPC. In this case, the formation of the PDL and SPC is performed by dry etching. For example, a photoresist material can be deposited on the organic material, and the photoresist material can be exposed with radiation (light) through the eighth mask, and then the photoresist material can be developed to form a photoresist pattern as an etching mask for the dry etching process. The PDL and SPC can have different heights, and a halftone mask can be used to form two layers (PDL and SPC) with different heights using a single eighth mask. In this case, the photoresist pattern forming the PDL can be exposed as a halftone area of ​​the eighth mask. Since the anode PXL is wet etched, no additional acid etching process is required before performing the exposure process using the eighth mask as a photomask for forming the PDL and SPC.

[0145] Figure 8 The exemplary embodiment illustrates that additional acid etching processes can be performed at various steps, but it is not necessary to perform additional acid etching processes at all stages. For example, at least once... Figure 8 The additional acid etching process shown may be sufficient. Whether to actually perform the additional acid etching process to prevent defects caused by yttrium compounds in the layer is determined by identifying layers in which defects are caused by yttrium compounds and performing the additional acid etching process before exposing those layers.

[0146] In the following text, refer to Figure 9 This describes an exemplary embodiment of the present invention in which an additional acid etching process is applied to an emitting display device according to an exemplary embodiment of the present invention.

[0147] Figure 9 The exemplary embodiment of the invention shown is wherein... Figure 8 The exemplary embodiments in this paper are compared to the exemplary embodiments of the present invention that use eleven masks. Figure 9 The process sequence of the transmitting display device according to an exemplary embodiment of the present invention is shown, which can be executed... Figure 9 The process shown is followed by the formation of the emitter layer, cathode, and encapsulation layer. Figure 8 Unlike in China, in Figure 9 In the exemplary embodiment of the present invention shown, the number of masks is increased by one due to the presence of the third gate conductive layer GAT3. In order to form an opening in the first interlayer insulating layer ILD1 disposed below the third gate conductive layer GAT3, the number of masks is increased by one. The pixel defining layer PDL and the spacer SPC are each formed through a mask. Therefore, this is an exemplary embodiment in which the total number of masks is increased by three.

[0148] Figure 9 The exemplary embodiment of the invention shown is an exemplary embodiment of the invention, wherein all steps prior to the formation of the anode PXL are performed by dry etching, and an additional acid etching process can be performed after dry etching and before the exposure process is performed using the next mask. For example, due to like Figure 8 As in the exemplary embodiment, since separate masks are not used to form openings in the first gate insulating layer GI1 and the second gate insulating layer GI2, additional acid etching processes can be performed before or after the deposition of the first gate insulating layer GI1, or before or after the deposition of the second gate insulating layer GI2. That is, since the semiconductor layer ACT is dry etched, and an exposure process exists for dry etching the first gate conductive layer GAT1 using a second mask as a photomask, additional acid etching processes can be performed before or after the formation of the first gate insulating layer GI1. Furthermore, since the first gate conductive layer GAT1 is dry etched, and an exposure process exists for dry etching the second gate conductive layer GAT2 using a third mask as a photomask, additional acid etching processes can be performed before or after the step of forming the second gate insulating layer GI2.

[0149] exist Figure 9 The process is described below. Figure 8 The process is not shown in the diagram (first interlayer insulating layer ILD1, third gate conductive layer GAT3).

[0150] After forming the second gate conductive layer GAT2 by dry etching using a third mask, a first interlayer insulating layer ILD1 covering the second gate conductive layer GAT2 is formed. An opening is formed in the first interlayer insulating layer ILD1 by using a fourth mask. In this case, the opening is formed by dry etching. For example, a photoresist material can be deposited on the first interlayer insulating layer ILD1, and the photoresist material can be exposed with radiation (light) through the fourth mask, and then the photoresist material can be developed to form a photoresist pattern as an etching mask for the dry etching process. Here, the first interlayer insulating layer ILD1 can be an inorganic insulating layer or an organic insulating layer. In the case of an inorganic insulating layer, the first interlayer insulating layer ILD1 can include silicon oxide (SiO2) or silicon nitride (Si3N4). Furthermore, multiple layers can be formed by respectively including a layer containing silicon oxide (SiO2) and a layer containing silicon nitride (Si3N4).

[0151] Since the second gate conductive layer GAT2 is dry etched, and there is an exposure process for dry etching the first interlayer insulating layer ILD1 using a fourth mask, an additional acid etching process can be performed after the dry etching of the second gate conductive layer GAT2 and before the exposure process is performed using the fourth mask as a photomask.

[0152] After an opening is formed in the first interlayer insulating layer ILD1, a third gate conductive layer GAT3 is formed by dry etching using a fifth mask. For example, a photoresist material can be deposited on the third gate conductive layer GAT3, and the photoresist material can be exposed by radiation (light) through the fifth mask. The photoresist material is then developed to form a photoresist pattern as an etching mask for the dry etching process. Since the first interlayer insulating layer ILD1 is dry etched, and there is an exposure process for dry etching the third gate conductive layer GAT3 using the fifth mask as a photomask, an additional acid etching process can be performed after the opening is formed in the first interlayer insulating layer ILD1 and before the exposure process is performed using the fifth mask as a photomask.

[0153] After forming the third gate conductive layer GAT3, a second interlayer insulating layer ILD2 is formed, and an opening is formed in the second interlayer insulating layer ILD2 using a sixth mask. In this case, the opening in the second interlayer insulating layer ILD2 is formed by dry etching. For example, a photoresist material can be deposited on the second interlayer insulating layer ILD2, and the photoresist material can be exposed with radiation (light) through the sixth mask, and then the photoresist material can be developed to form a photoresist pattern as an etching mask for the dry etching process. The second interlayer insulating layer ILD2 can be an inorganic insulating layer or an organic insulating layer. In the case of an inorganic insulating layer, the second interlayer insulating layer ILD2 can include silicon oxide (SiO2) or silicon nitride (Si3N4). Furthermore, multiple layers can be formed by including layers containing silicon oxide (SiO2) and layers containing silicon nitride (Si3N4), respectively. Compared with the first interlayer insulating layer ILD1, the second interlayer insulating layer ILD2 can be formed to be relatively thick. Since the third gate conductive layer GAT3 is dry etched, and there is an exposure process for dry etching the second interlayer insulating layer ILD2 using a sixth mask, an additional acid etching process can be performed after the third gate conductive layer GAT3 is formed and before the exposure process is performed using the sixth mask as a photomask.

[0154] After forming an opening in the second interlayer insulating layer ILD2, a data conductive layer DAT is formed by dry etching using a seventh mask. For example, a photoresist material can be deposited on the data conductive layer DAT, and the photoresist material can be exposed to radiation (light) through the seventh mask. The photoresist material is then developed to form a photoresist pattern as an etching mask for the dry etching process. Since the second interlayer insulating layer ILD2 is dry etched, and an exposure process exists for dry etching the data conductive layer DAT using the seventh mask, an additional acid etching process can be performed after forming the opening in the second interlayer insulating layer ILD2 and before performing the exposure process using the seventh mask as a photomask.

[0155] After forming the data conductive layer (DAT), an upper insulating layer (VIA) is formed, and an opening is formed in the upper insulating layer (VIA) using an eighth mask. For example, a photoresist material can be deposited on the upper insulating layer (VIA), and the photoresist material can be exposed to radiation (light) through the eighth mask. The photoresist material is then developed to form a photoresist pattern as an etching mask for dry etching processes. Here, the upper insulating layer (VIA) can be an inorganic insulating layer or an organic insulating layer. In the case of an inorganic insulating layer, the upper insulating layer (VIA) can include silicon oxide (SiO2) or silicon nitride (Si3N4). Furthermore, multiple layers can be formed, each including a layer containing silicon oxide (SiO2) and a layer containing silicon nitride (Si3N4). The upper insulating layer (VIA) can be formed to be relatively thick, resulting in a planar upper layer. Since the data conductive layer DAT is dry etched, and there is an exposure process for dry etching the insulating layer VIA using the eighth mask, an additional acid etching process can be performed after the data conductive layer DAT is formed and before the exposure process using the eighth mask as a photomask.

[0156] After forming an opening in the upper insulating layer VIA, the anode PXL is wet-etched using a ninth mask. For example, a photoresist material can be deposited on the anode PXL, and the photoresist material can be exposed to radiation (light) through the ninth mask, and then the photoresist material can be developed to form a photoresist pattern as an etching mask for the wet etching process.

[0157] Next, a pixel-defined layer (PDL) is formed using a tenth mask, and then a spacer (SPC) is formed using an eleventh mask.

[0158] exist Figure 9 In an exemplary embodiment, additional acid etching processes may be performed at various steps, but it is not necessary to perform additional acid etching processes at all steps. That is, at least once... Figure 9 The additional acid etching process shown may be sufficient. Whether to actually perform the additional acid etching process to prevent defects caused by yttrium compounds in the layer is determined by identifying layers in which defects are caused by yttrium compounds and performing the additional acid etching process before exposure processes in those layers.

[0159] In the following text, refer to Figure 10 The description includes exemplary embodiments of the invention, which involve applying an additional acid etching process to an emitting display device according to exemplary embodiments of the invention.

[0160] Figure 10 An exemplary embodiment of the invention is shown, further comprising a metal layer BML disposed between the substrate and the buffer layer. Subsequent processes following the formation of the buffer layer can be combined with… Figure 8 Exemplary embodiments and / or Figure 9 The process is the same as that in the exemplary embodiments.

[0161] according to Figure 10 Because a single mask is used to dry etch the metal layer BML, an additional acid etching process can be performed after the metal layer BML is formed. (See reference...) Figure 8 and Figure 9 In an exemplary embodiment, the buffer layer does not include a separate exposure process, and the semiconductor layer ACT disposed thereon includes an exposure process, but Figure 10 Exemplary embodiments may include additional acid etching processes before or after the formation of the buffer layer. For example, the additional acid etching process may remove yttrium compounds formed on the back or rear edge portions of the carrier substrate during the dry etching process that forms the metal layer BML, thereby preventing improper formation of photoresist patterns in subsequent processes after the formation of the buffer layer.

[0162] In the following text, refer to Figure 11 The description includes exemplary embodiments of the invention, which involve applying an additional acid etching process to an emitting display device according to exemplary embodiments of the invention. Figure 11 The process sequence of the transmitting display device according to an exemplary embodiment of the present invention is shown, which can be executed... Figure 11 The process shown is followed by the formation of an emitter layer, a cathode, and an encapsulation layer.

[0163] and Figure 8 and Figure 9 different, Figure 11 An exemplary embodiment includes two semiconductor layers (a first semiconductor layer ACT1 and a second semiconductor layer ACT2). One of the two semiconductor layers may be a semiconductor layer comprising a polycrystalline semiconductor, and the other may be a semiconductor layer comprising an oxide semiconductor. Figure 11 In an exemplary embodiment, the first semiconductor layer ACT1 is described as a polycrystalline semiconductor layer and the second semiconductor layer ACT2 is an oxide semiconductor layer.

[0164] In addition, Figure 11 In, with Figure 8 and Figure 9 Unlike other methods, the insulating layer, which is not etched using a separate mask, is not shown separately. However, since the insulating layer is disposed between conductive layers or between a conductive layer and a semiconductor layer, it can be etched using a separate mask. Figure 11 The location of the insulation layer can be easily identified.

[0165] according to Figure 11 A first semiconductor layer ACT1 is formed by dry etching using a first mask, and an insulating layer (first gate insulating layer) is deposited on the first semiconductor layer ACT1. The first semiconductor layer ACT1 may include a polycrystalline semiconductor.

[0166] Next, a first gate conductive layer GAT1 is formed by dry etching using a second mask, and an insulating layer (second gate insulating layer) is deposited on the first gate conductive layer GAT1.

[0167] Then, dry etching is performed using a third mask to form a second gate conductive layer GAT2, and an insulating layer (third gate insulating layer) is deposited on the second gate conductive layer GAT2.

[0168] Subsequently, a second semiconductor layer ACT2 is formed by dry etching using a fourth mask, and an insulating layer (fourth gate insulating layer) is deposited on the second semiconductor layer ACT2. The second semiconductor layer ACT2 may include an oxide semiconductor.

[0169] Subsequently, dry etching is performed using a fifth mask to form a third gate conductive layer GAT3. An insulating layer (first interlayer insulating layer) is then formed on the third gate conductive layer GAT3. Dry etching is then performed using two masks (a sixth mask and a seventh mask) to form openings in multiple insulating layers (the first interlayer insulating layer, the fourth gate insulating layer, the third gate insulating layer, the second gate insulating layer, and the first gate insulating layer), thereby forming first contact holes CNT1 and second contact holes CNT2. Some of the first contact holes CNT1 and some of the second contact holes CNT2 can be stacked on top of each other to form corresponding openings. Others of the first contact holes CNT1 do not stack with others of the second contact holes CNT2 and form openings separate from the second contact holes CNT2. When forming openings in multiple insulating layers, it may be necessary to form the openings deeply; therefore, two masks are used to form deep openings. However, if the openings can be formed using a single mask, they can be formed using a single mask.

[0170] Next, dry etching is performed using the eighth mask to form the data conductive layer DAT, an insulating layer VIA is deposited on the data conductive layer DAT, and the insulating layer VIA is dry etched using the ninth mask to form an opening.

[0171] Subsequently, the anode PXL is formed by wet etching using the tenth mask, and the pixel-defining layer PDL is formed on the anode PXL using the eleventh mask. The pixel-defining layer PDL can also be formed using a dry etching process.

[0172] exist Figure 11 In an exemplary embodiment, a wet etching process is applied to the layer of the anode PXL, and all underlying layers are dry etched. Therefore, an additional acid etching process can be performed after dry etching is performed using each mask and before the subsequent exposure process using the mask as a photomask.

[0173] Figure 11The exemplary embodiment illustrates that additional acid etching processes can be performed at various stages, but it is not necessary to perform additional acid etching processes at all steps. Figure 11 At least one of the possible additional acid etching processes shown may be sufficient. Whether to actually perform additional acid etching to prevent defects caused by yttrium compounds in the layer is determined by identifying layers in which defects are generated by yttrium compounds and performing additional acid etching processes before exposure processes are performed on those layers.

[0174] Figures 8 to 11 The invention primarily describes a method for manufacturing an emitting display device. However, similar processes are performed in liquid crystal displays with constant backlighting, except for the emitting layer; therefore, this invention can be applied to liquid crystal displays.

[0175] While the invention has been described in conjunction with exemplary embodiments now considered practical, it will be understood that the invention is not limited to the disclosed exemplary embodiments. Rather, the invention is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention as defined in the appended claims.

Claims

1. A method of manufacturing a display device in a chamber in which a material containing yttrium is coated on an inner surface, the method comprising the steps of: forming a first layer pattern on a substrate by dry etching; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etching mask; and wherein the step of forming the first layer pattern by the dry etching comprises the steps of: depositing a first layer material on the substrate; depositing a first photoresist on the first layer material; exposing the first photoresist to complete a first photoresist pattern; and after completing the first layer pattern, removing or cleaning the first photoresist pattern remaining on the first layer pattern, and wherein the additional acid etching process is performed after the step of the dry etching to form the first layer pattern and before the step of forming the photoresist pattern on the second layer material, by using an etching solution including at least one of hydrochloric acid, sulfuric acid, and nitric acid, wherein the additional acid etching process removes a first yttrium compound resulting from the yttrium coated on the inner surface of the chamber.

2. The method according to claim 1, wherein the step of forming the photoresist pattern on the second layer material comprises the steps of: depositing a photoresist material; and completing the photoresist pattern by exposing the photoresist material, wherein the additional acid etching process is performed before the step of completing the photoresist pattern by exposing the photoresist material, and wherein the additional acid etching process is performed between the step of depositing the photoresist material and the step of completing the photoresist pattern by exposing the photoresist material.

3. The method according to claim 1, wherein the additional acid etching process is performed before the step of removing or cleaning the first photoresist pattern, or the additional acid etching process is performed together with the step of removing or cleaning the first photoresist pattern.

4. The method according to claim 1, wherein the first layer pattern and the second layer pattern are each independently an electrically conductive layer, a semiconductor layer, or an insulating layer.

5. The method according to claim 1, wherein the first yttrium compound is Y2O3.

6. The method according to claim 5, wherein a carrier substrate attached to the substrate is disposed below the substrate, wherein the first yttrium compound is formed on a rear portion or an edge portion of the rear portion of the carrier substrate during the dry etching, and wherein the first yttrium compound is converted to a second yttrium compound YF3 in a cleaning process.

7. The method according to claim 1, wherein the first layer pattern is a semiconductor layer, the second layer pattern is a gate conductive layer, and the method further comprises the steps of: forming a first gate insulating layer disposed between the semiconductor layer and the gate conductive layer; forming a second gate insulating layer covering the gate conductive layer; and ​ ​ ​ ​ ​ ​ ​ wherein ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ forming a third layer pattern on the second gate insulating layer by using a third layer mask as a photomask, wherein the additional acid etching process is further performed after the step of completing the second layer pattern and before the step of exposing using the third layer mask to form the third layer pattern, wherein all of the conductive layers included in the conductive layers in the display device, which are formed closer to the substrate than the anode, are formed by the dry etching, and wherein the anode is formed by the wet etching.

8. The method of claim 1, wherein, The etching solution includes at least one of: a concentration of the nitric acid of 20% or less by weight percentage; a concentration of the sulfuric acid of 20% or less by weight percentage; and a concentration of the hydrochloric acid of 20% or less by weight percentage.

9. The method of claim 8, wherein, the concentration of the nitric acid is in a range of 5% to 10% by weight percentage, and the concentration of the sulfuric acid is in a range of 2% to 8% by weight percentage.

10. The method of claim 8, wherein, the etching solution further includes phosphoric acid or acetic acid, and a concentration of the phosphoric acid or the acetic acid is 10% to 20% by weight percentage.

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