Semiconductor substrate structure and method for forming the same

Abstract

The present invention discloses a semiconductor substrate structure and a method for forming the same. The semiconductor substrate structure includes: a capacitor having a plurality of input-output components extending in the same direction; a circuit layer located above the opposite ends of the plurality of input-output components, wherein the circuits in the circuit layer are in direct contact with and electrically connected to the plurality of input-output components to form a conductive path.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor substrate structure and a forming method thereof. Background Art

[0002] With the evolution of packaging technology, various packaging structures have been innovated, the overall package size has become smaller and smaller, the functions have become more and more, and the demand for passive components has also become higher and higher.

[0003] Most traditional passive components adopt the design of embedded passive components. Most of them are constructed layer by layer using the substrate, and then the location of the embedded passive components is removed by molding technology to form a cavity, and the passive components are placed in the cavity, and finally the holes are filled with sealing materials. This practice wastes engineering resources and also causes a loss in process yield. In addition, the current technology requires additional processes for embedded capacitors and inductors, making it impossible to reduce the thickness, and the electrical performance is also relatively poor. Summary of the invention

[0004] In view of the problems in the related art, the present invention provides a semiconductor substrate structure and a method for forming the same.

[0005] The technical solution of the present invention is achieved in this way:

[0006] According to one aspect of the present invention, there is provided a semiconductor substrate structure, comprising: a capacitor having a plurality of input-output components extending in the same direction; a circuit layer located above opposite ends of the plurality of input-output components, wherein circuits in the circuit layer are in direct contact with and electrically connected to the plurality of input-output components to form a conductive path.

[0007] In the above semiconductor substrate structure, the plurality of input and output components are a plurality of conductive pillars.

[0008] In the above semiconductor substrate structure, a plurality of input-output components penetrate the capacitor.

[0009] In the above semiconductor substrate structure, the circuit layer covers the capacitor.

[0010] In the above semiconductor substrate structure, the capacitor has a center line perpendicular to the extension direction of the plurality of input and output components, and the circuits in the circuit layer are symmetrically arranged with respect to the center line of the capacitor.

[0011] In the above semiconductor substrate structure, the conductive path is an inductor coil.

[0012] In the above semiconductor substrate structure, the capacitor includes a metal core layer, and a plurality of input and output components penetrate the metal core layer.

[0013] In the above semiconductor substrate structure, the capacitor further includes an electrode material layer covering opposite sides of the metal core layer.

[0014] The semiconductor substrate structure further includes a magnetic conductive layer disposed above the capacitor.

[0015] In the above semiconductor substrate structure, the capacitor further includes an additional input-output component, and the additional input-output component is a through hole.

[0016] According to one aspect of the present invention, a method for forming a semiconductor substrate structure is also provided, comprising: forming a capacitor having a plurality of input-output components; electroplating conductive circuits on both ends of the plurality of input-output components of the capacitor, the conductive circuits connecting the plurality of input-output components to form a conductive path passing through the capacitor.

[0017] In the above method, the capacitor is a film type capacitor.

[0018] In the above method, forming a capacitor includes: providing a metal core layer; and covering the metal core layer with electrode material layers on opposite sides.

[0019] In the above method, forming the capacitor includes forming a plurality of through holes passing through the core layer and the electrode material layer.

[0020] In the above method, forming the capacitor further comprises: forming a conductive pillar in the through hole to form a plurality of input and output components.

[0021] In the above method, the capacitor has a center line perpendicular to the extension direction of the plurality of input and output components, and the conductive lines are symmetrically arranged relative to the center line of the capacitor.

[0022] In the above method, the conductive path is an inductor coil.

[0023] In the above method, forming the capacitor includes: forming an additional input-output component, wherein the additional input-output component is a through hole.

[0024] The above method further includes: forming a magnetic conductive layer above the capacitor.

[0025] In the above method, after electroplating the conductive circuit, the method further includes: forming a redistribution layer above the conductive circuit. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 is a schematic structural diagram of a semiconductor substrate according to an embodiment of the present invention.

[0028] Figure 2A A schematic top view of a semiconductor substrate structure according to an embodiment of the present invention is shown.

[0029] Figure 2B 2 is a schematic diagram of a structure in which a conductive path is formed to form an inductor coil according to an embodiment of the present invention.

[0030] FIG. 3A to FIG. 3F is a flow chart of various stages of a method for forming a semiconductor substrate structure according to an embodiment of the present invention. DETAILED DESCRIPTION

[0031] The following will be combined with the accompanying drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.

[0032] Figure 1 Schematic diagram of the structure of a semiconductor substrate according to an embodiment of the present invention. Figure 1 The semiconductor substrate structure shown includes a capacitor 110. The capacitor 110 has a plurality of input-output components 112, and the plurality of input-output components 112 extend in the same direction (such as a vertical direction). In some embodiments, the plurality of input-output components 112 are a plurality of conductive pillars. In other embodiments, the input-output components 112 may also be any other applicable structure. Circuit layers 120 are also provided on the opposite ends of the plurality of input-output components 112, respectively. In some embodiments, the circuit layer 120 covers the capacitor 110. The circuits 122 in the circuit layer 120 are in direct contact with and electrically connected to the plurality of input-output components 112, and a conductive path may be formed through the circuits 122 in the circuit layer 120 and the plurality of input-output components 112. Therefore, the function of a passive component may be formed through the electrical connection between the circuits 122 in the circuit layer 120 and the plurality of input-output components 112.

[0033] Compared with the prior art that embeds a single packaged passive component in a substrate, the present invention utilizes the input-output components 112 and the circuit 122 in the substrate to form the function of the passive component in an integrated manner with direct contact and electrical connection, and there is no single packaged passive component in the substrate. The present invention completes the construction of the passive component during the process of manufacturing the substrate, and there is no need to embed the single packaged passive component in the substrate after the substrate is manufactured. Therefore, the process yield can be relatively high. Compared with the traditional embedded substrate, the present invention saves manufacturing processes, can save costs and increase production.

[0034] Figure 2A A schematic top view of a semiconductor substrate structure according to an embodiment of the present invention is shown. Figure 2B 1 is a schematic diagram of a structure of an inductor formed by a conductive path formed according to an embodiment of the present invention. In some embodiments, the conductive path formed by the electrical connection between the circuit 122 in the circuit layer 120 and the plurality of input and output components 112 may be an inductor 180 ( Figure 2B ) inductor coil. The circuit 122 in the circuit layer 120 at the upper end of the input-output component 112 connects the upper end of the adjacent input-output component 112, and the circuit 122 in the circuit layer 120 at the lower end of the input-output component 112 connects the lower end of the adjacent input-output component 112, so that the conductive path forms the inductor coil of the inductor 180.

[0035] For example, in the application of forming a filter by capacitors and inductors, by integrating capacitors and 3D inductors, better electrical performance can be achieved than conventional technologies in the case of the same package size. In addition, since the input and output components 112 of the capacitor 110 can be electrically connected by means of electroplating lines 122 to make the inductor coil required for the inductor 180, there are no other electrical connection elements (such as solder balls) between the input and output components 112, thus effectively improving the problem of poor electrical performance.

[0036] In some embodiments, the capacitor 110 may be a thin film capacitor. A plurality of input-output components 112 may pass through the capacitor 110. In the embodiment where the capacitor 110 is a thin film capacitor, since the capacitor itself needs to be fabricated with input-output components 112 passing through the capacitor 110, such input-output components 112 may also be used as part of the 3D inductor 180, which may further enhance the integration effect.

[0037] exist Figure 1 In the illustrated embodiment, the capacitor 110 further includes an additional input-output component 1121, which is a through hole. The additional input-output component 1121 can be used as a cathode of the capacitor 110. One of the input-output components 1122 can be used as an anode of the capacitor 110, and one of the input-output components 1122 can be shared by the capacitor 110 and the inductor 180.

[0038] In an embodiment where the capacitor 110 is a film capacitor, the capacitor 110 may include a metal core layer, and a plurality of input and output components 112 penetrate the metal core layer. The capacitor 110 also includes an electrode material layer covering the opposite side of the metal core layer. Since the capacitor 110 has a metal core layer, the inductance value of the 3D inductor 180 can be improved to a certain extent.

[0039] In some embodiments, the capacitor 110 has a center line 115 perpendicular to the extension direction of the plurality of input and output components 112, and the circuits 122 in the circuit layer 120 are symmetrically arranged relative to the center line 115 of the capacitor 110. Since the 3D inductor 180 is centered around the capacitor 110, the thickness of the substrate and the volume can be effectively utilized, and the size in the thickness direction can be greatly reduced. It should be understood that in other embodiments, any other suitable configuration can be made for the position components of the capacitor 110 and the inductor 180, and the present invention is not limited to this.

[0040] In some embodiments, a redistribution layer 130 is disposed on a side of the circuit layer 120 away from the capacitor 110. A magnetic conductive layer 140 may also be disposed on any side of the capacitor 110. In the illustrated embodiment, the magnetic conductive layer 140 is specifically disposed on the redistribution layer 130 on both sides of the capacitor 110. The inductance value of the inductor can be further increased by disposing the magnetic conductive layer 140.

[0041] FIG. 3A to FIG. 3F 1 is a flow chart of various stages of a method for forming a semiconductor substrate structure according to an embodiment of the present invention. Figure 3A As shown, the material for forming capacitor 110. In an embodiment where capacitor 110 is a film type capacitor, the material for capacitor 10 may be formed by providing a metal core layer and covering the electrode material layer on opposite sides of the metal core layer.

[0042] like Figure 3B As shown, a first dielectric layer 121 is formed on opposite sides of the capacitor 110. Then, as shown in FIG. Figure 3CAs shown, a plurality of input-output components 112 are formed through the material of the capacitor 110 and the first dielectric layer 121 to form a capacitor 110 having a plurality of input-output components 112. In some embodiments, the step of forming the input-output components 112 may include: forming a plurality of through holes through the core layer and the electrode material layer of the capacitor material and the first dielectric layer using a mechanical drilling process; forming conductive pillars in the through holes to form a plurality of input-output components 112. In some embodiments, during this step, an additional input-output component 1121 may also be formed, and the additional input-output component 1121 is a through hole. Among them, at least one of the input-output components 112 can be used as a cathode of the capacitor 110, and at least one of the input-output components 112 can be used as a cathode of the capacitor 110. In some embodiments, at least one of the input-output components 112 (such as Figure 1 The input-output components 1122) may be shared by the capacitor 110 and a subsequently formed inductor.

[0043] Continue to refer Figure 3C Conductive lines (also referred to as lines) 122 are plated on both ends of the plurality of input and output components 112 of the capacitor 110 and on the first dielectric layer 121. The first dielectric layer 121 and the lines 122 connect the plurality of input and output components 112 to form a conductive path passing through the capacitor 110.

[0044] like Figure 3D As shown, a second dielectric layer 131 and an additional line 139 located on the second dielectric layer 131 and interconnected with the line 122 through a through hole 138 in the second dielectric layer 131 are formed above the first dielectric layer 121 and the line 122. Figure 3E As shown, a third dielectric layer 132 and an additional circuit 139 located on the third dielectric layer 132 and interconnected with the circuit 139 in the second dielectric layer 131 through a through hole 138 in the third dielectric layer are formed over the second dielectric layer 131. Figure 3D and Figure 3E In the step shown in FIG. 1 , a fourth dielectric layer 133 and an additional circuit 139 located on the fourth dielectric layer 133 and interconnected with the circuit 139 in the third dielectric layer 132 through a through hole 138 in the fourth dielectric layer 133 are formed over the third dielectric layer 132 and the circuit. Until a redistribution layer 130 having a predetermined number of layers is formed, as shown in FIG. Figure 3F The redistribution layer 130 includes second to fourth dielectric layers 131 , 132 and 133 , and vias 133 located in the second to fourth dielectric layers 131 , 132 and 133 and lines 139 located on the second to fourth dielectric layers 131 , 132 and 133 . Figure 3FThe number of layers of the redistribution layer 130 shown is only exemplary, and the number of layers of the redistribution layer 130 may be configured in any appropriate manner according to actual applications.

[0045] Then, a magnetic conductive layer 140 is formed on any one side or both sides of the capacitor 110. Figure 1 The semiconductor substrate structure 100 shown in FIG. The formed semiconductor substrate structure may have the Figure 1 The beneficial effects discussed.

[0046] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor substrate structure, characterized in that: include: A capacitor having a plurality of input and output components extending in the same direction; A circuit layer is located above the opposite ends of the plurality of input and output components, wherein the circuits in the circuit layer are in direct contact with and electrically connected to the plurality of input and output components to form a conductive path, wherein the conductive path is an inductor coil of the inductor and surrounds the capacitor as the center. The capacitor is a film capacitor, and the plurality of input and output components in the inductor are input and output components that pass through the capacitor and are required by the capacitor itself. Among the multiple input-output components, the circuit in the circuit layer at the upper end of the input-output component is connected to the upper end of an adjacent input-output component, and the circuit in the circuit layer at the lower end of the input-output component is connected to the lower end of another adjacent input-output component, so that the conductive path constitutes the inductor coil.

2. The semiconductor substrate structure according to claim 1, characterized in that: The plurality of input and output components are a plurality of conductive pillars.

3. The semiconductor substrate structure according to claim 1, characterized in that: There is a first dielectric layer on the opposite side of the capacitor, and the plurality of input-output components pass through the first dielectric layer.

4. The semiconductor substrate structure according to claim 1, characterized in that: The circuit layer covers the capacitor.

5. The semiconductor substrate structure according to claim 1, characterized in that: The capacitor has a center line perpendicular to an extending direction of the plurality of input-output components, and the circuits in the circuit layer are symmetrically arranged with respect to the center line of the capacitor.

6. The semiconductor substrate structure according to claim 1, characterized in that: There are no solder balls between the input and output components.

7. The semiconductor substrate structure according to claim 1, characterized in that: The capacitor includes a metal core layer, and the plurality of input-output components penetrate through the metal core layer.

8. The semiconductor substrate structure according to claim 7, characterized in that: The capacitor also includes a layer of electrode material overlying opposite sides of the metal core layer.

9. The semiconductor substrate structure according to claim 1, characterized in that: It also includes a magnetic conductive layer, which is arranged above the capacitor.

10. The semiconductor substrate structure according to claim 1, characterized in that: The capacitor further includes an additional input-output component, wherein the additional input-output component is a through-hole.

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