Light curing method and device

Abstract

Some embodiments of the present disclosure provide a method and apparatus for photocuring. The method includes providing a semiconductor wafer into a cavity. The method also includes irradiating the semiconductor wafer with a light source. The method also includes supplying a gas into the cavity through a plurality of exhaust ports of non-width. In addition, the method includes removing the gas in the cavity through a plurality of exhaust ports, wherein the number of the exhaust ports is greater than the number of the exhaust ports. The method also includes removing the semiconductor wafer from the cavity.

Description

Technical Field

[0001] Some embodiments of the present disclosure relate to a semiconductor processing device and a method for processing a semiconductor, and more particularly to a photocuring device and a photocuring method for a semiconductor wafer. Background Art

[0002] As semiconductor technology advances, the demand for semiconductor components with higher performance and lower cost continues to grow. To meet these demands, the semiconductor industry continues to impose stringent requirements on component manufacturing yield and reliability. These requirements drive the need to further optimize the design and architecture of semiconductor component manufacturing systems. Summary of the invention

[0003] Some embodiments disclosed herein provide a photocuring device. The photocuring device includes a cavity. The photocuring device also includes a wafer seat, which is located in the cavity. The photocuring device also includes a gas guiding device, which is located in the cavity and is configured to provide a gas flow passing over the wafer seat. The gas guiding device has a first side and a second side. In addition, the gas guiding device includes: a first exhaust port and a second exhaust port, which are arranged on the first side of the gas guiding device, and the width of the first exhaust port is smaller than the width of the second exhaust port; and a plurality of exhaust ports, which are arranged on the second side of the gas guiding device. In addition, the photocuring device includes a gas supply source, and the first exhaust port and the second exhaust port are fluidly connected. The photocuring device also includes a gas exhaust device, and the exhaust port is fluidly connected.

[0004] Some embodiments of the present disclosure also provide a photocuring device. The photocuring device includes a cavity. The photocuring device also includes a wafer seat, which is located in the cavity. The photocuring device also includes a gas guide device, which is located in the cavity and is configured to provide a gas flow passing over the wafer seat. The gas guide device has a first side and a second side. In addition, the gas guide device includes: a plurality of exhaust ports, arranged on the first side of the gas guide device; and a plurality of suction ports, arranged on the second side of the gas guide device, wherein the number of suction ports is greater than the number of exhaust ports. In addition, the photocuring device includes a gas supply source, which is fluidically connected to the exhaust port. The photocuring device also includes a gas exhaust device, which is fluidically connected to the suction port.

[0005] Some embodiments of the present disclosure also provide a photocuring method. The method includes providing a semiconductor wafer into a cavity. The method also includes irradiating the semiconductor wafer with a light source. The method also includes supplying a gas into the cavity through multiple exhaust ports of non-width. In addition, the method includes removing the gas in the cavity through multiple exhaust ports, wherein the number of exhaust ports is greater than the number of exhaust ports. The method also includes removing the semiconductor wafer from the cavity. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The aspects of the present disclosure can be better understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard industry practice, various features are not drawn to scale. In fact, the size of each feature may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1 A schematic diagram showing a light curing device according to some embodiments of the present disclosure;

[0008] Figure 2 A top view showing a light curing device according to some embodiments of the present disclosure;

[0009] Figure 3 A side view showing an exhaust port of a gas guiding device according to some embodiments of the present disclosure;

[0010] Figure 4 A side view showing a gas extraction port of a gas guiding device according to some embodiments of the present disclosure;

[0011] Figure 5 A flow chart showing a light curing method according to some embodiments of the present disclosure;

[0012] Figure 6 A flow field simulation diagram showing a light curing device using some embodiments of the present disclosure;

[0013] Fig. 7A A side view showing an exhaust port of a gas guiding device according to some embodiments of the present disclosure;

[0014] Figure 7B A side view showing an exhaust port of a gas guiding device according to some embodiments of the present disclosure;

[0015] Figure 7C A side view showing an exhaust port of a gas guiding device according to some embodiments of the present disclosure;

[0016] Fig. 8A A side view showing a gas extraction port of a gas guiding device according to some embodiments of the present disclosure;

[0017] Figure 8B A side view showing a gas extraction port of a gas guiding device according to some embodiments of the present disclosure;

[0018] Figure 8C A side view showing a gas extraction port of a gas guiding device according to some embodiments of the present disclosure;

[0019] Fig.8D A side view showing a gas extraction port of a gas guiding device according to some embodiments of the present disclosure;

[0020] Fig. 8E A side view of a gas extraction port of a gas guiding device according to some embodiments of the present disclosure is shown.

[0021]

Explanation of symbols

[0022] 50:Semiconductor wafer

[0023] 100:Light curing equipment

[0024] 110: Cavity

[0025] 116: Wafer seat

[0026] 117: Heater

[0027] 118: Shaft

[0028] 120: Wafer channel

[0029] 130: Light source

[0030] 132: UV light unit

[0031] 133:Reflector

[0032] 140: Light penetrating element

[0033] 150: Gas system

[0034] 152: Gas supply source

[0035] 153: Intake pipe

[0036] 154: Gas Exhaust Device

[0037] 155: Exhaust pipe

[0038] 160: Gas guide device

[0039] 161: First side

[0040] 1611: First End

[0041] 1612: Second End

[0042] 162: Second side

[0043] 1621: First End

[0044] 1622: Second End

[0045] 163: First gas channel

[0046] 164: Second gas channel

[0047] 165: Air inlet

[0048] 166: Exhaust hole

[0049] 160a: Gas guide device

[0050] 161a: First side

[0051] 160b: Gas guide device

[0052] 161b: First side

[0053] 160c: Gas guide device

[0054] 161c: First side

[0055] 160d: Gas guide device

[0056] 162d: Second side

[0057] 1621d: First End

[0058] 1622d: Second end

[0059] 160e: Gas guide device

[0060] 162e: Second side

[0061] 160f: Gas guide device

[0062] 162f: Second side

[0063] 1621f: First end

[0064] 1622f: Second end

[0065] 160g: Gas guide device

[0066] 162g: Second side

[0067] 160h: Gas guide device

[0068] 162h: Second side

[0069] 1621h: First end

[0070] 1622h: Second end

[0071] 171: First exhaust port (exhaust port)

[0072] 172: Second exhaust port (exhaust port)

[0073] 173: Third exhaust port (exhaust port)

[0074] 171a: first exhaust port

[0075] 172a: Second exhaust port

[0076] 173a: Third exhaust port

[0077] 171b: first exhaust port

[0078] 172b: Second exhaust port

[0079] 173b: Third exhaust port

[0080] 171c: First exhaust port

[0081] 172c: Second exhaust port

[0082] 173c: Third exhaust port

[0083] 180: Air extraction port

[0084] 180d: Exhaust port

[0085] 180e: Air extraction port

[0086] 180f: Air extraction port

[0087] 180g: Air pump

[0088] 180h: Air extraction port

[0089] 90: Axis

[0090] C: Center

[0091] D: Circumferential direction

[0092] A1: Angle

[0093] A2: Angle

[0094] S10: Methods

[0095] S11: Operation

[0096] S12: Operation

[0097] S13: Operation

[0098] S14: Operation

[0099] S15: Operation

[0100] P1: Distance

[0101] P2: Distance

[0102] W1: Width

[0103] W2: Width

[0104] W3: Width

[0105] W4: Width

[0106] W5: Width

[0107] W6: Width DETAILED DESCRIPTION

[0108] The following disclosure provides many different embodiments or examples to implement the different features of the present disclosure. The following disclosure in this specification describes specific examples of various components and their arrangement in order to simplify the description of the invention. Of course, these specific examples are not intended to limit the present disclosure. For example, if the following disclosure in this specification describes forming a first feature on or above a second feature, it means that it includes an embodiment in which the first feature formed is in direct contact with the second feature, and also includes an embodiment in which an additional feature can be formed between the first feature and the second feature, so that the first feature and the second feature may not be in direct contact. In addition, different examples in the description of the present disclosure may use repeated reference symbols and / or words. These repeated symbols or words are for the purpose of simplification and clarity, and are not used to limit the relationship between the various embodiments and / or the described appearance structures.

[0109] Furthermore, in order to facilitate the description of the relationship between an element or feature component and another (plural) element or (plural) feature component in the accompanying drawings, spatially related terms may be used, such as "under...", "below", "lower", "above", "upper" and similar terms. It is understood that in addition to the orientations shown in the accompanying drawings, spatially related terms cover different orientations of the device in use or operation. The device may also be positioned otherwise (for example, rotated 90 degrees or located in other orientations), and the description of the spatially related terms used may be interpreted accordingly. It is understood that additional operating steps may be provided before, during and after the method, and in some method embodiments, some of the operating steps described may be replaced or omitted.

[0110] It should be noted that the embodiments discussed herein may not necessarily describe every component or feature that may be present in the structure. For example, one or more components may be omitted from the drawings, such as when the discussion of the component may be sufficient to convey the various aspects of the embodiment. Furthermore, the method embodiments discussed herein may be discussed in a particular order of proceeding, however, in other method embodiments, they may be proceeded in any reasonable order.

[0111] The manufacture of semiconductor devices involves many processes and technologies, and UV curing process is one of them. In terms of UV curing process, a wafer can be placed in a UV curing device for UV curing. During the curing process, the wafer is heated in the chamber of the UV curing device. Some substances in the wafer will be released and distributed in the chamber, and an airflow generating device can be placed in the chamber to remove these substances by generating an airflow. Some embodiments of the present disclosure provide a photocuring device, which includes a gas guide device with an optimized airflow flow field design, thereby improving the smoothness of the airflow through the cavity, thereby reducing wafer contamination and enhancing the efficiency of airflow removal.

[0112] Figure 1 A schematic diagram of a light curing device 100 according to some embodiments of the present disclosure is shown. Figure 2 A top view of a photocuring device 100 according to some embodiments of the present disclosure is shown. The photocuring device 100 has a cavity 110, and a light irradiation processing space is defined in the cavity 110. In some embodiments, the cavity 110 includes a wafer channel 120. The wafer channel 120 is connected to the side wall of the cavity 110 for the semiconductor wafer 50 to enter the cavity 110 or move out of the cavity 110. In some embodiments, the movement of the semiconductor wafer 50 relative to the cavity 110 can be performed by an automated material handling system (AMHS). The automated material handling system can load an unprocessed semiconductor wafer 50 into the cavity 110 through the same path as the processed semiconductor wafer 50 is unloaded from the cavity 110. Optionally, the path for loading the unprocessed semiconductor wafer 50 into the cavity 110 is different from the path for unloading the processed semiconductor wafer 50 from the cavity 110.

[0113] According to some embodiments, the semiconductor wafer 50 is made of silicon, germanium or other semiconductor materials. According to some embodiments, the semiconductor wafer 50 is made of a compound semiconductor, such as silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs) or indium phosphide (InP). According to some embodiments, the semiconductor wafer 50 is made of an alloy semiconductor, such as silicon germanium (SiGe), silicon germanium carbon (SiGeC), gallium arsenide phosphide (GaAsP) or gallium indium phosphide (GaInP). According to some embodiments, the semiconductor wafer 50 includes a crystal film layer. For example, the semiconductor wafer 50 has a crystal film layer covering a bulk semiconductor. According to some embodiments, the semiconductor wafer 50 may be a silicon-on-insulator (SOI) or a germanium-on-insulator (GOI) substrate.

[0114] The semiconductor wafer 50 may include a plurality of device elements. For example, the device elements formed on the semiconductor wafer 50 may include a transistor, such as a metal oxide semiconductor field effect transistor (MOSFET), a complementary metal oxide semiconductor (CMOS) transistor, a bipolar junction transistor (BJT), a high voltage transistor, a high frequency transistor, a p-channel and / or n-channel field-effect transistor (PFET) or a n-channel field-effect transistor (NFET), and / or other elements. The plurality of device elements on the semiconductor wafer 50 have been subjected to a plurality of processing steps, such as deposition, etching, ion implantation, photolithography, annealing, and / or other processes. In some embodiments, a film of a dielectric material is deposited on the surface of the semiconductor wafer 50 to be cured. For example, a low-k film may be deposited on the surface of the semiconductor wafer 50 by any suitable method (including CVD (chemical vapor deposition)) or spin coating).

[0115] According to some embodiments of the present disclosure, the photocuring apparatus 100 includes a wafer pedestal 116 disposed above the bottom of the chamber 110. The wafer pedestal 116 has a generally circular turntable that is configured and constructed to support the semiconductor wafer 50. The wafer pedestal 116 can hold the semiconductor wafer 50 on the wafer pedestal 116 by using electrostatic charge, mechanical clamps, vacuum clamps, or gravity.

[0116] In some embodiments, the wafer bed 116 includes a ceramic material. The wafer bed 116 is connected to a lifting mechanism (not shown) via a rotating shaft 118. The rotating shaft 118 can lower the wafer bed 116 to a transfer position to allow the semiconductor wafer 50 to enter the chamber 110 and be placed on the wafer bed 116. The rotating shaft 118 can raise the wafer bed 116 to a predetermined processing position. The rotating shaft 118 is connected to a rotating mechanism (not shown). The wafer bed 116 can be rotated by the rotating shaft 118, so that the semiconductor wafer 50 on the wafer bed 116 is uniformly exposed to the radiation light.

[0117] The wafer base 116 further includes a heater 117, so that the wafer base 116 and the semiconductor wafer 50 thereon can be heated to a predetermined temperature during the photocuring process. However, it is understood that the technology for heating the semiconductor wafer 50 is not limited to the use of the heater 117, and the semiconductor wafer 50 on the wafer base 116 can also be heated by applying optical technology (tungsten lamp, laser), thermal radiation technology, or by using a susceptor and radio frequency (RF) induction heating.

[0118] According to some embodiments of the present disclosure, the light curing device 100 further includes a light source 130. The light source 130 includes an ultraviolet light lamp unit 132 for emitting ultraviolet light wavelength radiation. The ultraviolet light lamp unit 132 includes a plurality of ultraviolet light lamp units 132 arranged in an array. The semiconductor wafer 50 is positioned in an optical line of sight of the ultraviolet light lamp unit 132 within the chamber 110 to receive ultraviolet light radiation for thin film curing. By irradiating the extreme ultraviolet light wavelength radiation, the thin film formed on the semiconductor wafer 50 can be cured and its composition can be optimized.

[0119] The light source 130 may use any suitable type of ultraviolet light lamp unit 132 or light source, including but not limited to mercury lamps and excimer lamps, mercury microwave arc lamps, pulsed xenon flash lamps, ultraviolet light emitting diode lamps. In some embodiments, the ultraviolet light lamp unit 132 is a longitudinally elongated tubular ultraviolet lamp that is spaced apart and arranged in parallel. The ultraviolet light lamp unit 132 may be powered by any suitable power source that can be used to supply energy to the lamp. The ultraviolet light lamp unit 132 may be selected to generate ultraviolet radiation having any suitable wavelength required for the processing requirements. For example, but not limited to, the wavelength of the ultraviolet radiation used may range between about 193 nm and 500 nm.

[0120] In some embodiments, the light source 130 further includes one or more reflectors, and the reflector 133 is used to guide and enhance the ultraviolet wavelength radiation irradiated on the semiconductor wafer 50. The reflector 133 can be placed in any suitable configuration to enhance the reflection of the ultraviolet wavelength radiation. The reflector 133 can be made of any suitable coated or uncoated metal with a reflective surface processing or coating (operable to reflect ultraviolet wavelength radiation). In an embodiment, the reflector 133 can be made of aluminum or an aluminum alloy, and the surface of the reflector 133 is treated by a surface treatment process (such as an aluminum anodizing process). In the aluminum anodizing process, aluminum oxide grows down to the inside and outside of the surface in equal amounts. The anodized aluminum layer is grown by passing a direct current through an electrolytic solution using an aluminum target (object), that is, the reflector 133 is used as an anode (positive electrode). The current releases hydrogen at the cathode (negative electrode) and releases oxygen on the surface of the reflector 133 as an aluminum anode, thereby producing a deposition of aluminum oxide. Alternating current and pulsed current are also possible, but are rarely used. The voltage required for various solutions ranges from 1 to 300 V DC, although most fall within the range of 15 to 21 V. Thicker coatings formed in sulfuric acid and organic acids generally require higher voltages. The anodizing current varies with the area of ​​aluminum being anodized, and generally ranges from 30 to 300 amps per square meter (2.8 to 28 amps per square foot).

[0121] According to some embodiments of the present disclosure, the light-curing device 100 further includes a light-penetrating element 140. The light-penetrating element 140 separates the cavity 110 and the light source 130. Therefore, the light-penetrating element 140 is placed and positioned above the semiconductor wafer 50 to operatively seal the cavity 110 from the external environment and the ultraviolet light lamp unit 132. The light-penetrating element 140 prevents the exhaust gas of the semiconductor wafer 50 from reaching and contaminating the ultraviolet light lamp unit 132. The light-penetrating element 140 is a transparent plate and operates to allow the ultraviolet light wavelength radiation of the ultraviolet light lamp unit 132 to project and pass through the light-penetrating element 140 and irradiate the semiconductor wafer 50 placed below the light-penetrating element 140. In some embodiments, the light-penetrating element 140 may be made of synthetic quartz. In some embodiments, the light-penetrating element 140 in the existing light-curing device 100 has a size sufficient to accommodate all lamp array areas.

[0122] According to some embodiments of the present disclosure, the photocuring device 100 further includes a gas system 150. The gas system 150 includes a gas supply source 152, a gas exhaust device 154, and a gas guide device 160. The gas supply source 152 supplies gas to the chamber 110 via an inlet pipe 153 and the gas guide device 160. In addition, the gas is exhausted from the chamber 110 through the gas guide device 160 and the exhaust pipe 155. In some embodiments, the exhaust pipe 155 is connected to a vacuum source (not shown) in the gas exhaust device 154, wherein the chamber 110 is operated at a pressure lower than atmospheric pressure. In various embodiments, by operating the gas exhaust device 154, the chamber 110 can be maintained in a vacuum, atmospheric, or positive pressure state.

[0123] The gas may be a cooling gas used to maintain the temperature in the chamber 110 at a desired level, which in some representative non-limiting embodiments may be below 450° C. The gas is also used as a purge gas to help remove various organic compounds or other species that are exhausted from the semiconductor wafer 50 or the chamber 110 during the photocuring process. In some embodiments, the gas is nitrogen (N2), helium (He), argon (Ar); however, other suitable inert or noble gases may be used.

[0124] Reference Figure 2 In some embodiments, the gas guiding device 160 has a ring-shaped structure and has a first side surface 161 and a second side surface 162. In one example, the first side surface 161 extends in the circumferential direction D of the gas guiding device 160 and has an angle A1 relative to the center of the gas guiding device 160. The angle A1 may be between 120 degrees and 170 degrees. The second side surface 162 is opposite to the first side surface 161. The second side surface 162 extends in the circumferential direction D of the gas guiding device 160 and has an angle A2 relative to the center C of the gas guiding device 160. The angle A2 may be between 120 degrees and 170 degrees. In one embodiment, an axis 90 passes through the first side surface 161 and the second side surface 162. The axis 90 may pass through the substantial centers of the first side surface 161 and the second side surface 162. In one embodiment, the axis 90 also passes through the center C of the gas guiding device 160. In one embodiment, the extending directions of the first side surface 161 and the second side surface 162 are perpendicular to the plane for supporting the semiconductor wafer (ie, the supporting surface of the wafer seat 116 ).

[0125] In one embodiment, a first gas channel 163 and a second gas channel 164 are formed in the gas guiding device 160. The first gas channel 163 is adjacent to the first side surface 161 and extends inside the gas guiding device 160 along the circumferential direction D of the gas guiding device 160. Two gas inlet holes 165 are formed on the top surface 1601 of the gas guiding device 160 and connected to the first gas channel 163. In one embodiment, the two gas inlet holes 165 are symmetrically arranged relative to the axis 90. Figure 1 ) enters the first gas channel 163 through the two gas inlet holes 165.

[0126] The second gas channel 164 is adjacent to the second side surface 162 and extends inside the gas guiding device 160 along the circumferential direction D of the gas guiding device 160. A gas extraction hole 166 is formed on the bottom surface of the gas guiding device 160 and is connected to the second gas channel 164. In one embodiment, the extension length of the second gas channel 164 in the circumferential direction D is greater than the extension length of the second side surface 162 in the circumferential direction D, and the gas extraction hole 166 is located between the first end 1621 of the second side surface 162 and the end 1641 of the second gas channel 164.

[0127] A plurality of exhaust ports (e.g., two first exhaust ports 171, two second exhaust ports 172, and two third exhaust ports 173) are formed on the first side surface 161 of the gas guiding device 160 and are fluidically connected to the first gas channel 163. The two first exhaust ports 171, the two second exhaust ports 172, and the two third exhaust ports 173 are arranged symmetrically about the axis 90. Specifically, as Figure 3 As shown, the two first exhaust ports 171 are disposed on opposite sides of the axis 90. In addition, along a direction away from the axis 90, one of the two first exhaust ports 171, one of the two second exhaust ports 172, and one of the two third exhaust ports 173 are spaced apart from each other and arranged in sequence.

[0128] Reference Figure 3, the width W1 of the first exhaust port 171 is smaller than the width W2 of the second exhaust port 172, and the width W2 of the second exhaust port 172 is smaller than the width W3 of the third exhaust port 173. In one embodiment, the width ratio between two adjacent exhaust ports is between about 0.80 and about 0.85. In one embodiment, the ratio of width W3 to width W2 is about 0.83, and the ratio of width W2 to width W1 is about 0.83. The present disclosure is not limited to this, and in other embodiments, the ratio of width W3 to width W2 is different from the ratio of width W2 to width W1. In a specific embodiment, width W1 is about 58.69 mm, width W2 is about 48.97 mm, and width W3 is about 41.54 mm. In one embodiment, the first exhaust port 171, the second exhaust port 172, and the third exhaust port 173 are spaced apart from each other by an equal distance P1. In addition, the first exhaust ports 171 located on both sides of the axis 90 are also spaced apart by the same distance P1. In one embodiment, the distance P1 is approximately 15.52 mm.

[0129] In one embodiment, the two third exhaust ports 173 are respectively disposed at the two ends of the first side surface 161. That is, the edges of the two third exhaust ports 173 away from the axis 90 are the first end 1611 and the second end 1612 of the first side surface 161. The angles of the edges of the two third exhaust ports 173 away from the axis 90 relative to the center C are also the same as Figure 2 The angle A1 ( Figure 2 ).

[0130] Reference Figure 2 , a plurality of gas extraction ports 180 are formed on the second side surface 162 of the gas guiding device 160 and are fluidically connected to the second gas channel 164. Specifically, as Figure 4 As shown, the second side surface 162 of the gas guiding device 160 has nine gas extraction ports 180. One of the nine gas extraction ports 180 is disposed on the axis 90. Four gas extraction ports 180 are disposed on two opposite sides of the axis 90, respectively.

[0131] Reference Figure 4In one embodiment, the nine air suction ports 180 have the same width. In other embodiments, some of the nine air suction ports 180 have widths different from those of the other air suction ports 180. For example, in one embodiment, the air suction ports 180 located on the axis 90 have a first width W4, the air suction ports 180 closest to both sides of the axis 90 have a second width W5, and the remaining air suction ports 180 have a third width W6. The third width W6 is greater than the second width W5, and the second width W5 is greater than the first width W4. In one embodiment, the first width is approximately 32 mm, the second width W5 is approximately 33 mm, and the third width W6 is approximately 34 mm. In one embodiment, the nine air suction ports 180 are spaced at an equal distance P2 from each other. In a specific embodiment, the distance P2 is approximately 9.5 mm.

[0132] In one embodiment, the two air inlets 180 farthest from the axis 90 are respectively disposed at the two ends of the second side surface 162. That is, the edges of the two air inlets 180 farthest from the axis 90 are the first end 1621 and the second end 1622 of the second side surface 162. The angles of the edges of the two air inlets 180 farthest from the axis 90 relative to the center C are also the same as Figure 2 The angle A2 ( Figure 2 ).

[0133] The two first exhaust ports 171 , the two second exhaust ports 172 , the two third exhaust ports 173 , and the suction port 180 may be small holes with flat openings. Therefore, the airflow generated by the two first exhaust ports 171 , the two second exhaust ports 172 , the two third exhaust ports 173 , and the suction port 180 may be laminar flow, thus forming a more uniform airflow in the cavity 110 .

[0134] In some embodiments, the gas guiding device 160 is formed in an integral manner. In a specific embodiment, the gas guiding device 160 may include an upper ring structure and a lower ring structure. After the upper ring structure and the lower ring structure are formed separately, they are directly combined by welding so that there is no relative displacement between the two. In this way, the displacement of the ring structure on the wall and the lower ring structure due to the difference in thermal stress can be prevented, thereby preventing the debris generated by the relative friction between the upper ring structure and the lower ring structure from falling into the chamber 110 and contaminating the semiconductor wafer 50.

[0135] In one embodiment, the gas guiding device 160 is made of a low thermal expansion coefficient material. The thermal expansion coefficient of the low thermal expansion coefficient material is about 1×10 -6 / ℃ to 1×10 -5 / ℃. For example, the low thermal expansion coefficient material may be ceramic, and the material of the ceramic may be aluminum oxide (Al2O3) (whose thermal expansion coefficient is about 8×10 -6 / ℃), silicon carbide (SiC) (its thermal expansion coefficient is about 4.1×10 -6 / ℃), zirconium dioxide (ZrO2) (its thermal expansion coefficient is about 9.5×10 -6 / ℃), silicon oxide (Si3O4) (its thermal expansion coefficient is about 2.0×10 -6 / ℃~4.1×10 -6 / ℃) or any combination thereof. It should be noted that the materials of the above-mentioned low thermal expansion coefficient materials are only illustrative and are not intended to limit the present disclosure. A person having ordinary knowledge in the field to which the present disclosure belongs can select a suitable low thermal expansion coefficient material according to actual needs. In the present embodiment, the ceramic not only has a low thermal expansion coefficient, but also has a low friction coefficient. Therefore, although the gas guide device 160 may generate friction relative to the side wall of the cavity 110 during the photocuring process, the friction will be too small to cause particles to be generated between the gas guide device 160 and the side wall of the cavity 110. In this way, wafer contamination can be avoided.

[0136] Figure 5 A flowchart of a light curing method S10 according to some embodiments of the present disclosure is shown. It is understood that additional operations may be provided in Figure 5 Before, during and after the operations shown. For other embodiments of the method, some of the operations described below may be replaced or reduced. The order of operations / processes may be interchangeable. The following embodiments may adopt the materials, configurations and dimensions described in the above embodiments, and their detailed description may be omitted.

[0137] The method S10 includes an operation S11 of providing a semiconductor wafer 50 into a chamber 110. In some embodiments, the semiconductor wafer 50 is moved into the chamber 110 onto a wafer bed 116 by a robot (not shown). After the semiconductor wafer 50 is placed on the wafer bed 116, the robot is moved out of the chamber 110.

[0138] The method S10 further includes an operation S12 of irradiating the semiconductor wafer 50 with a light source. The light source 130 may generate ultraviolet radiation having any suitable wavelength required by the processing requirements. For example, but not limited to, the wavelength of the ultraviolet radiation used may range from about 193 nm to 500 nm.

[0139] The method S10 further includes an operation S13 of supplying gas into the chamber 110 through exhaust ports of unequal width. In one embodiment, the photocuring apparatus 100 exhausts gas into the chamber 110 through two first exhaust ports 171, two second exhaust ports 172, and two third exhaust ports 173 on the gas guide device 160. The gas exhausted into the chamber 110 may be a cooling gas used to maintain the temperature in the chamber 110 at a desired level. Alternatively, the gas exhausted into the chamber 110 may be used as a purge gas to help remove various organic compounds or other species exhausted from the semiconductor wafer 50 or the chamber 110 during the photocuring process. In some embodiments, the gas is nitrogen (N2), helium (He), or argon (Ar); however, the present disclosure is not limited thereto, and other suitable inert or rare gases may be used as the gas.

[0140] The method S10 further includes an operation S14 of removing the gas in the chamber 110 through the exhaust port 180. In one embodiment, the light curing apparatus 100 exhausts the gas in the chamber 110 from the chamber 1110 through the nine exhaust ports 180 on the gas guide device 160. The substances exhausted from the chamber 110 through the exhaust ports 180 include the gas supplied to the chamber from the two first exhaust ports 171, the two second exhaust ports 172, and the two third exhaust ports 173, as well as the gas exhausted from the semiconductor wafer 50 during the light curing process, and the contamination particles that may contaminate the semiconductor wafer 50.

[0141] In one embodiment, due to the air extraction hole 166 ( Figure 2 ) is located between the first end 1621 of the second side 162 and the end 1641 of the second gas channel 164, so the gas flow rate through each gas extraction port 180 is not the same. In an exemplary embodiment, the gas flow rate through the gas extraction port 180 decreases in a direction away from the gas extraction hole 166. The gas flow rate through the gas extraction port 180 close to the first end 1621 of the second side 162 is approximately 20.38% of the total flow rate, while the gas flow rate through the gas extraction port 180 close to the second end 1622 of the second side 162 is approximately 4.24% of the total flow rate.

[0142] The method S10 further includes an operation S15, removing the semiconductor wafer 50 from the chamber 110. In some embodiments, the semiconductor wafer 50 is photocured in the chamber 110 for a predetermined time. After the predetermined time, the photocuring device 100 ends the execution of the operations S13 and S14, and removes the semiconductor wafer 50 from the chamber 110 through a robot arm (not shown). After being removed from the chamber 110, the semiconductor wafer 50 can be transferred to another semiconductor processing machine for additional processing, such as a photolithography process, an etching process, etc.

[0143] Figure 6A flow field simulation diagram showing the use of a light curing device according to some embodiments of the present disclosure. Figure 6 In the flow field simulation diagram, the airflow on both sides of the axis 90 is evenly distributed (the air field is symmetrical). In addition, the vortex occurring at the edge of the semiconductor wafer is minimized, and the airflow moves roughly in a direction parallel to the axis 90 without being affected by the air extraction holes 166 ( Figure 2 ) is offset from the axis 90 and causes uneven flow. Thus, substances (such as porogen) discharged from the semiconductor wafer can be efficiently discharged outside the chamber 110. On the other hand, since the airflow passes through the surface of the semiconductor wafer 50 evenly, the contaminant particles generated inside the chamber 110 are not easily deposited on the surface of the semiconductor wafer 50, and the production yield of the semiconductor wafer 50 is further improved.

[0144] Although the present disclosure has been disclosed in the above embodiments, it is not intended to limit the present disclosure. Anyone familiar with the art can make various changes and modifications without departing from the spirit and scope of the present disclosure. For example, the position and number of the exhaust port and the air extraction port of the gas guide device can be adjusted. The following examples illustrate various possible embodiments.

[0145] Fig. 7A , Figure 7B , Figure 7C A schematic diagram showing an exhaust port of a gas guiding device according to some embodiments of the present disclosure. Fig. 7A In an embodiment, the first side 161a of the gas guiding device 160a has two first exhaust ports 171a, two second exhaust ports 172a, and two third exhaust ports 173a. In a direction away from the axis 90, one of the two first exhaust ports 171a, one of the two second exhaust ports 172a, and one of the two third exhaust ports 173a are arranged in sequence. The width of the first exhaust port 171a is greater than the width of the second exhaust port 172a, and the width of the second exhaust port 172a is greater than the width of the third exhaust port 173a. In an embodiment, the first exhaust port 171a, the second exhaust port 172a, and the third exhaust port 173a are spaced at equal distances from each other. In addition, the first exhaust ports 171a located on both sides of the axis 90 are also spaced at the same distance.

[0146] exist Figure 7BIn an embodiment, the first side surface 161b of the gas guiding device 160b has a first exhaust port 171b, two second exhaust ports 172b, and two third exhaust ports 173b. The first exhaust port 171b is disposed relative to the axis 90, and one of the two second exhaust ports 172b and one of the two third exhaust ports 173b are arranged in sequence along a direction away from the axis 90. The width of the first exhaust port 171b is greater than the width of the second exhaust port 172b, and the width of the third exhaust port 173b is greater than the width of the second exhaust port 172b, and the width of the first exhaust port 171b is greater than the width of the third exhaust port 173b. In an embodiment, the first exhaust port 171b, the second exhaust port 172b, and the third exhaust port 173b are spaced at equal distances from each other.

[0147] exist Figure 7C In an embodiment, the first side surface 161c of the gas guiding device 160c has a first exhaust port 171c, two second exhaust ports 172c, and two third exhaust ports 173c. The first exhaust port 171c is disposed relative to the axis 90, and one of the two second exhaust ports 172c and one of the two third exhaust ports 173c are arranged in sequence along a direction away from the axis 90. The width of the first exhaust port 171c is greater than the width of the second exhaust port 172c, and the width of the second exhaust port 172c is greater than the third exhaust port 173c. In an embodiment, the first exhaust port 171c, the second exhaust port 172c, and the third exhaust port 173c are spaced equidistantly from each other.

[0148] Fig. 8A , Figure 8B , Figure 8C , Fig.8D , Fig. 8E A schematic diagram showing an exhaust port of a gas guiding device according to some embodiments of the present disclosure. Fig. 8A In an embodiment, the second side 162d of the gas guiding device 160d has 9 air suction ports 180d. The 9 air suction ports 180d may have the same width, but the air suction ports 180d are arranged at unequal distances from each other. Specifically, in one embodiment, the second side 162d extends from the first end 1621d to the second end 1622d along a circumferential direction D. The air suction ports 180d are also arranged along the circumferential direction D. The spacing between two adjacent air suction ports 180d close to the first end 1621d is greater than the spacing between two adjacent air suction ports 180d away from the first end 1621d. In one embodiment, the first end 1621d is adjacent to the air suction hole 166 ( Figure 2 )set up.

[0149] exist Figure 8BIn the embodiment of the present invention, the second side surface 162e of the gas guiding device 160e has six gas extraction ports 180e. The six gas extraction ports 180e may have the same width, and the gas extraction ports 180e are arranged at equal distances from each other.

[0150] exist Figure 8C In an embodiment, the second side 162f of the gas guiding device 160f has 6 air suction ports 180f. The 6 air suction ports 180f may have the same width, but the air suction ports 180f are arranged at unequal distances from each other. Specifically, in one embodiment, the second side 162f extends from the first end 1621f to the second end 1622f along a circumferential direction D. The air suction ports 180f are also arranged along the circumferential direction D. The spacing between two adjacent air suction ports 180f close to the first end 1621f is greater than the spacing between two adjacent air suction ports 180f away from the first end 1621f. In one embodiment, the first end 1621f is adjacent to the air suction hole 166 ( Figure 2 )set up.

[0151] exist Fig.8D In the embodiment of the present invention, the second side surface 162g of the gas guiding device 160g has three gas extraction ports 180g. The three gas extraction ports 180g may have the same width, and the gas extraction ports 180g are arranged at equal distances from each other.

[0152] exist Fig. 8E In an embodiment, the second side 162h of the gas guiding device 160h has three air suction ports 180h. The three air suction ports 180h may have the same width, but the air suction ports 180h are arranged at unequal distances from each other. Specifically, in one embodiment, the second side 162h extends from the first end 1621h to the second end 1622h along a circumferential direction D. The air suction ports 180h are also arranged along the circumferential direction D. The spacing between two adjacent air suction ports 180h close to the first end 1621h is greater than the spacing between two adjacent air suction ports 180h away from the first end 1621h. In one embodiment, the first end 1621h is adjacent to the air suction hole 166 ( Figure 2 )set up.

[0153] Some embodiments of the present disclosure supply gas to a chamber for implementing a photocuring process via a gas guide device that can provide symmetrical gas flow, so that the gas can stably and evenly pass over a wafer seat for supporting a semiconductor wafer, so that the gas released from the semiconductor wafer can be efficiently discharged from the chamber, and the probability of contamination particles contaminating the semiconductor wafer can also be reduced.

[0154] Some embodiments of the present disclosure provide a photocuring device. The photocuring device includes a cavity. The photocuring device also includes a wafer seat, which is located in the cavity. The photocuring device also includes a gas guiding device, which is located in the cavity and is configured to provide an airflow passing over the wafer seat. The gas guiding device has a first side and a second side. In addition, the gas guiding device includes: a first exhaust port and a second exhaust port, which are arranged on the first side of the gas guiding device, and the width of the first exhaust port is smaller than the width of the second exhaust port; and a plurality of exhaust ports, which are arranged on the second side of the gas guiding device. In addition, the photocuring device includes a gas supply source, which fluidly connects the first exhaust port and the second exhaust port. The photocuring device also includes a gas exhaust device, which fluidly connects the exhaust port. In the above embodiment, the gas guiding device includes two first exhaust ports and two second exhaust ports, and the two first exhaust ports and the two second exhaust ports are respectively arranged symmetrically relative to an axis. In the above embodiment, the light curing device further includes two third exhaust ports, which are arranged on the first side of the gas guiding device and are arranged symmetrically with respect to the axis, wherein one of the two first exhaust ports, one of the two second exhaust ports, and one of the two third exhaust ports are arranged in sequence in a direction away from the axis. In the above embodiment, the width of the two third exhaust ports is smaller than the width of the two second exhaust ports. In the above embodiment, the number of the exhaust ports is nine.

[0155] Some embodiments of the present disclosure also provide a photocuring device. The photocuring device includes a cavity. The photocuring device also includes a wafer seat, which is located in the cavity. The photocuring device also includes a gas guide device, which is located in the cavity and is configured to provide a gas flow passing over the wafer seat. The gas guide device has a first side and a second side. In addition, the gas guide device includes: a plurality of exhaust ports, which are arranged on the first side of the gas guide device; and a plurality of suction ports, which are arranged on the second side of the gas guide device, wherein the number of suction ports is greater than the number of exhaust ports. In addition, the photocuring device includes a gas supply source, which is fluidically connected to the exhaust ports. The photocuring device also includes a gas exhaust device, which is fluidically connected to the suction ports. In the above embodiment, the number of exhaust ports is six, and the number of suction ports is nine. In the above embodiment, an axis passes through the first side and the second side, and the exhaust ports and the suction ports are respectively arranged symmetrically on the first side and the second side relative to the axis.

[0156] Some embodiments disclosed herein also provide a photocuring method. The method includes providing a semiconductor wafer into a cavity. The method also includes irradiating the semiconductor wafer with a light source. The method also includes supplying a gas into the cavity through multiple exhaust ports of non-width. In addition, the method includes removing the gas in the cavity through multiple exhaust ports, wherein the number of exhaust ports is greater than the number of exhaust ports. The method also includes removing the semiconductor wafer from the cavity. In the above embodiment, the number of exhaust ports is six, and the number of exhaust ports is nine.

[0157] The features or examples of several embodiments are summarized above so that those skilled in the art can better understand the aspects of the present disclosure. Those skilled in the art should understand that the present disclosure can be easily used as a basis for designing or modifying other processes and structures to implement the same purposes and / or achieve the same advantages of the embodiments or examples introduced herein. Those skilled in the art should also recognize that such equivalent structures do not depart from the spirit and scope of the present disclosure, and various changes, substitutions and modifications herein can be made without departing from the spirit and scope of the present disclosure.

Claims

1. A light curing device, suitable for processing a semiconductor wafer, characterized in that: include: a cavity; a wafer seat, located in the cavity; A gas guiding device is located in the chamber and is configured to provide a gas flow through the top of the wafer seat, wherein the gas guiding device has a first side and a second side, and the gas guiding device includes: A first exhaust port and a second exhaust port are arranged on the first side surface of the gas guiding device, and the width of the first exhaust port is smaller than the width of the second exhaust port; A plurality of gas extraction ports are arranged on the second side surface of the gas guiding device, and the material of the gas guiding device is ceramic; a first gas channel fluidly connecting the first exhaust port and the second exhaust port on the first side; a second gas channel, fluidically connected to the plurality of gas extraction ports on the second side; a first air inlet located at a first end of the first air channel; a second gas inlet hole located at a second end of the first gas channel, the first end and the second end of the first gas channel being opposite to each other; and An air extraction hole located at a first end of the second gas channel; a gas supply source, fluidly connecting the first exhaust port and the second exhaust port through the first air inlet and the second air inlet; and A gas exhaust device is fluidically connected to the plurality of gas exhaust ports through the gas exhaust hole.

2. The light curing device according to claim 1, characterized in that: The gas guiding device comprises two first exhaust ports and two second exhaust ports, wherein the two first exhaust ports and the two second exhaust ports are respectively arranged symmetrically with respect to an axis.

3. The light curing device according to claim 2, characterized in that: It also includes two third exhaust ports, which are arranged on the first side of the gas guiding device and symmetrically arranged relative to the axis, wherein one of the two first exhaust ports, one of the two second exhaust ports and one of the two third exhaust ports are arranged in sequence along a direction away from the axis.

4. The light curing device according to claim 3, characterized in that: The width of the two third exhaust ports is smaller than the width of the two second exhaust ports.

5. The light curing device according to claim 1, characterized in that: The number of the air extraction ports is nine.

6. A light curing device, suitable for processing a semiconductor wafer, characterized in that: include: a cavity; a wafer seat, located in the cavity; A gas guiding device is located in the chamber and is configured to provide a gas flow through the top of the wafer seat, wherein the gas guiding device has a first side and a second side, and the gas guiding device includes: A plurality of exhaust ports arranged on the first side of the gas guiding device; A plurality of gas extraction ports are arranged on the second side surface of the gas guiding device, wherein the number of the gas extraction ports is greater than the number of the gas exhaust ports, and the material of the gas guiding device is ceramic; a first gas channel fluidly connected to the plurality of exhaust ports on the first side; a second gas channel, fluidically connected to the plurality of gas extraction ports on the second side; a first air inlet located at a first end of the first air channel; a second gas inlet hole located at a second end of the first gas channel, the first end and the second end of the first gas channel being opposite to each other; and An air extraction hole located at a first end of the second gas channel; a gas supply source, fluidly connected to the plurality of exhaust ports through the first gas inlet and the second gas inlet; and A gas exhaust device is fluidically connected to the plurality of gas exhaust ports through the gas exhaust hole.

7. The light curing device according to claim 6, characterized in that: The number of the exhaust ports is six, and the number of the air extraction ports is nine.

8. The light curing device according to claim 6, characterized in that: An axis passes through the first side surface and the second side surface, and the exhaust port and the suction port are respectively arranged symmetrically on the first side surface and the second side surface relative to the axis.

9. A photocuring method, characterized in that: include: Providing a semiconductor wafer into a chamber; irradiating the semiconductor wafer with a light source; Supplying a gas into the chamber through a plurality of exhaust ports of unequal widths, wherein the plurality of exhaust ports are on a first side surface of a ceramic gas guide device and are fluidly connected to a first gas channel, a first gas inlet hole is located at a first end of the first gas channel, a second gas inlet hole is located at a second end of the first gas channel, the first end and the second end of the first gas channel are opposite to each other, and the gas is supplied to the plurality of exhaust ports through the first gas inlet hole and the second gas inlet hole; Removing the gas in the cavity through a plurality of suction ports, wherein the number of the plurality of suction ports is greater than the number of the plurality of exhaust ports, the plurality of suction ports are on a second side of the ceramic gas guide device and fluidly connected to a second gas channel, a suction hole is located at a first end of the second gas channel, and the gas is removed from the cavity through the suction hole; and The semiconductor wafer is removed from the chamber.

10. The light curing method according to claim 9, characterized in that: The number of the plurality of exhaust ports is six, and the number of the plurality of air extraction ports is nine.

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