Mitigating thermal shock on adjacent stacked semiconductor devices

Abstract

The present application relates to mitigating thermal shock on adjacent stacked semiconductor devices. A semiconductor device assembly and associated methods are disclosed herein. The semiconductor device assembly includes (1) a substrate having a first side and a second side opposite the first side; (2) a first group of stacked semiconductor devices on the first side of the substrate; (3) a second group of stacked semiconductor devices adjacent to one side of the first group of stacked semiconductor devices; (4) a third group of stacked semiconductor devices adjacent to the opposite side of the first group of stacked semiconductor devices; and (5) a temperature regulating component on the second side and aligned with the second group of stacked semiconductor devices. The temperature regulating component is positioned to absorb thermal energy and thereby thermally isolate the second group of stacked semiconductor devices from the first group of stacked semiconductor devices.

Description

Technical Field

[0001] The present technology relates to apparatus and methods for eliminating or at least mitigating thermal impact of thermal processes on stacked semiconductor devices. More specifically, some embodiments of the present technology relate to apparatus and methods for mitigating thermal impact on adjacent stacked semiconductor devices generated during a thermal bonding process. Background Art

[0002] Packaged and stacked semiconductor dies including memory chips, microprocessor chips, logic chips, and imager chips typically include semiconductor dies mounted on a substrate and encapsulated in a plastic protective covering. Individual semiconductor dies may include functional features, such as memory cells, processor circuits, imager devices, and other circuit systems, as well as bonding pads electrically connected to the functional features. Semiconductor manufacturers continue to reduce the size of die packages to accommodate space constraints of electronic devices. One method for increasing the processing power of semiconductor packages is to stack multiple semiconductor dies vertically on top of each other in a single package. Multiple semiconductor dies can be connected using a thermal bonding process, which includes (i) positioning a film between two of the semiconductor dies, and (ii) thermally curing the film. Summary of the invention

[0003] In one aspect, the present application provides a semiconductor device assembly comprising: a substrate having a first side and a second side opposite to the first side; a first group of stacked semiconductor devices located on the first side of the substrate; a second group of stacked semiconductor devices adjacent to the first group of stacked semiconductor devices; and wherein a temperature regulating component is located on the second side of the substrate and at least partially aligned with the second group of stacked semiconductor devices, and wherein the temperature regulating component is configured to absorb at least a portion of thermal energy applied to the first group of stacked semiconductor devices and thereby inhibit the thermal energy from heating the second group of stacked semiconductor devices.

[0004] On the other hand, the present application further provides a method for managing thermal energy, comprising: applying thermal energy from a separate thermal component to a first group of stacked semiconductor devices in a semiconductor device assembly; and absorbing at least a portion of the thermal energy generated by the thermal component through a temperature regulating component of the semiconductor device assembly, so as to suppress the portion of the thermal energy from increasing the temperature of the second group of stacked semiconductor devices.

[0005] On the other hand, the present application further provides a semiconductor device assembly, comprising: a substrate having a first side and a second side opposite to the first side; a first group of stacked semiconductor devices, which are located on the first side of the substrate; a second group of stacked semiconductor devices, which are adjacent to one side of the first group of stacked semiconductor devices; a third group of stacked semiconductor devices, which are adjacent to the opposite side of the first group of stacked semiconductor devices; and a temperature regulating component, which is located on the second side of the substrate and is at least partially aligned with the second group of stacked semiconductor devices, and the temperature regulating component is positioned relative to the second group of stacked semiconductor devices to absorb at least a portion of the thermal energy and thereby thermally isolate the second group of stacked semiconductor devices from the first group of stacked semiconductor devices. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Many aspects of the present technology may be better understood with reference to the following drawings. The components in the drawings are not necessarily drawn to scale. Instead, emphasis is placed on illustrating the principles of the present technology.

[0007] Figure 1A is a schematic cross-sectional view of a semiconductor device assembly according to an embodiment of the present technology.

[0008] Figure 1B is a schematic bottom view of a semiconductor device assembly according to an embodiment of the present technology.

[0009] Figures 2A to 2C is a schematic bottom view of a semiconductor device packaging assembly according to an embodiment of the present technology.

[0010] Figure 3 is a schematic isometric view of a temperature regulation assembly according to an embodiment of the present technology.

[0011] Figure 4A and 4B is a schematic cross-sectional view of a semiconductor device packaging assembly according to an embodiment of the present technology.

[0012] Figure 5 is a block diagram illustrating a system incorporating a semiconductor assembly according to an embodiment of the present technology.

[0013] Figure 6 is a flow chart illustrating a method according to an embodiment of the present technology. DETAILED DESCRIPTION

[0014] Specific details of several embodiments of stacked semiconductor die packages and methods of manufacturing such die packages are described below. The term "semiconductor device" generally refers to a solid-state device that includes one or more semiconductor materials. The semiconductor device may include, for example, a semiconductor substrate, a wafer, or a die separated from a wafer or substrate. Throughout the disclosure, semiconductor dies are generally described in the context of semiconductor devices, but are not limited thereto.

[0015] The term "semiconductor device package" may refer to an arrangement having one or more semiconductor devices incorporated into a common package. A semiconductor device package may include a housing or shell that partially or completely encapsulates at least one semiconductor device. A semiconductor device package may also include an interposer substrate that carries one or more semiconductor devices and is attached to or otherwise incorporated into the shell. The term "semiconductor device assembly" may refer to an assembly including a plurality of stacked semiconductor devices. As used herein, the terms "vertical," "lateral," "upper," and "lower" may refer to the relative orientation or position of features in a semiconductor device or package in view of the orientation shown in the figures. However, these terms should be broadly interpreted to include semiconductor devices having other orientations, such as inverted or tilted orientations.

[0016] When using thermal energy to cure two adjacent semiconductor device packages that are close to each other, the thermal energy applied to the first package can adversely affect the second package. For example, the excess thermal energy can further harden or otherwise impact the film of the second film so that it cannot properly deform and / or adhere to the connecting semiconductor die. The present technology provides a solution to this problem.

[0017] Figure 1A 1 is a schematic cross-sectional view of a semiconductor device assembly 100 according to an embodiment of the present technology. The semiconductor device assembly 100 includes a base substrate 101, a first group of stacked semiconductor devices 103, and a second group of stacked semiconductor devices 105. The first and second groups of semiconductor devices 103, 105 are adjacent to each other and are carried by the base substrate 101. The semiconductor device assembly 100 may also include more than two semiconductor device packages. The first and second groups of stacked semiconductor devices 103, 105 will be encapsulated or covered by a suitable material (e.g., a dielectric material, epoxy resin, etc.). The encapsulated first and second groups of stacked semiconductor devices 103, 105 may be referred to as first and second semiconductor device packages, respectively.

[0018] The first group of stacked semiconductor devices 103 respectively includes a plurality of semiconductor devices 1031 and a plurality of curable layers 1033 between or on the semiconductor devices 1031. Figure 1AIn the illustrated embodiment, the first set of stacked semiconductor devices 103 includes eight semiconductor devices 1031 and eight curable layers 1033 . However, it should be understood that the first set of stacked semiconductor devices 103 may have a different number of semiconductor devices 1031 and curable layers 1033 .

[0019] The second group of stacked semiconductor devices 105 may further include a plurality of semiconductor devices 1051 and a plurality of curable layers 1053 between or on the semiconductor devices 1031 , respectively. Figure 1A The embodiment of the second group of stacked semiconductor devices 105 shown in has eight semiconductor devices 1051 and eight curable layers 1053 , but in other embodiments, the second group of stacked semiconductor devices 105 may include a different number of semiconductor devices 1051 and curable layers 1053 .

[0020] The curable layers 1033, 1053 may include a die attach material for bonding the semiconductor devices 1031, 1051 to each other or to the base substrate 101. The curable layers 1033, 1053 may be a non-conductive film (NCF), a non-conductive paste (NCP), etc. The curable layers 1033, 1053 may also include a thermosensitive or temperature-sensitive material so that the stiffness or flexibility of the curable layers 1033, 1053 may be manipulated by adjusting the temperature or heat energy.

[0021] Curable layer 1033 may be cured by applying thermal energy from thermal assembly 109 of bonding head 107. In some embodiments, thermal assembly 109 may be an external assembly attached to bonding head 107. Figure 1A As shown, the heat generated by the thermal component 109 flows through the first semiconductor die package 103 to the base substrate 101 along the direction D1, thereby curing the curable layer 1033. A portion of the thermal energy may also flow to the second group of stacked semiconductor devices 105, as shown in the direction D2, and then flow upward to one or more of the curable layers 1053, as shown in the direction D3. This may adversely affect one or more of the curable layers 1053.

[0022] The semiconductor device assembly 100 of the present technology can be manufactured by using a temperature regulating component 111, which is configured to inhibit or prevent the thermal energy generated by the thermal component 109 from reaching the curable layer 1053 of the second group of stacked semiconductor devices 105. The temperature regulating component 111 is thus configured to thermally isolate the second group of stacked semiconductor devices 105 from the first group of stacked semiconductor devices 103 at least partially. Figure 1AAs shown in FIG. 1 , the temperature regulating component 111 may be adjacent to the base substrate 101 and opposite to the second group of stacked semiconductor devices 105. The temperature regulating component 111 may be located in an area A1 defined by the side 103a of the first group of stacked semiconductor devices 103 and the second side 105b of the second group of stacked semiconductor devices 105. For example, Figure 1A As shown, the temperature regulating component 111 is positioned so that the edge 111a of the temperature regulating component 111 is aligned with the first side 105a of the second group of stacked semiconductor devices 105. In some embodiments, the temperature regulating component 111 can be shaped or formed to cover a majority of the area A1. For example, in various embodiments, the majority can mean greater than 90%, 75%, or 50%.

[0023] The temperature regulating component 111 may also or alternatively be in the region A2 and / or the region A3. When the temperature regulating component 111 is in the region A2, the temperature regulating component 111 absorbs heat transferred from both sides of the second group of stacked semiconductor devices 105 through the base substrate 101. When the temperature regulating component 111 is in the region A3, the temperature regulating component 111 absorbs excess heat directly from directly below the first group of stacked semiconductor devices 103.

[0024] The temperature regulating component 111 may be a cooling unit or a heat sink configured to absorb thermal energy from the thermal component 109 to maintain the temperature of the base substrate 101 within a desired range. The temperature regulating component 111 may be, for example, a "passive" cooling unit that only absorbs thermal energy transferred to it and cools by conduction and convection to the environment. Alternatively, the temperature regulating component 111 may be an "active" cooling unit that actively cools other components (e.g., the second group of stacked semiconductor devices 105). In these embodiments, the temperature regulating component 111 may be a thermoelectric component, such as a thermoelectric cooler, a Peltier device, a solid-state refrigerator, etc.

[0025] Figure 1B yes Figure 1A Schematic bottom view of semiconductor device assembly 100 is shown. The second group of stacked semiconductor devices 105 has a first lateral dimension X1 and a second lateral dimension Y1. The first group of stacked semiconductor devices 103 generally has the same lateral dimensions as the second group of stacked semiconductor devices 105. The temperature regulating component 111 has a first lateral dimension X2 and a second lateral dimension Y2. Figure 1B In the illustrated embodiment, the first lateral dimension X2 of the temperature regulating component 111 is smaller than the first lateral dimension X1 of the second group of stacked semiconductor devices 105, and the second lateral dimension Y2 of the temperature regulating component 111 is larger than the second lateral dimension Y1 of the second group of stacked semiconductor devices 105. The temperature regulating component 111 may have a linear shape, such as a square, a rectangle (such as Figure 1B shown) etc.

[0026] Figures 2A to 2C FIG. 1 is a schematic bottom view of a semiconductor device packaging assembly 100 according to an embodiment of the present technology. Figure 2A In the illustrated embodiment, the first lateral dimension X2 of the temperature regulating component 111 is larger than the first lateral dimension X1 of the second group of stacked semiconductor devices 105, and the second lateral dimension Y2 of the temperature regulating component 111 is also larger than the second lateral dimension Y1 of the second group of stacked semiconductor devices 105. Figure 2B In the illustrated embodiment, the first lateral dimension X2 of the temperature regulating component 111 is greater than the first lateral dimension X1 of the second group of stacked semiconductor devices 105, and the second lateral dimension Y2 of the temperature regulating component 111 is substantially the same as the second lateral dimension Y1 of the second group of stacked semiconductor devices 105. Figure 2C In the embodiment described in , the first lateral dimension X2 of the temperature regulating component 111 is substantially the same as the first lateral dimension X1 of the second group of stacked semiconductor devices 105, and the second lateral dimension Y2 of the temperature regulating component 111 is also substantially the same as the second lateral dimension Y1 of the second group of stacked semiconductor devices 105.

[0027] Figure 3 is a schematic isometric view of a temperature regulating component 311 according to an embodiment of the present technology. The temperature regulating component 311 is a rectangular ring. As shown, the temperature regulating component 311 has a first outer dimension X3 and a second outer dimension Y3. The temperature regulating component 311 also has a first inner dimension X4 and a second inner dimension Y4. The first outer dimension X3 is greater than the first inner dimension X4. The second outer dimension Y3 is greater than the second inner dimension Y4. In various embodiments, the difference between the first outer dimension X3 and the first inner dimension X4 (or the difference between the second outer dimension Y3 and the second inner dimension Y4) may vary depending on factors such as the size of the second group of stacked semiconductor devices 105, the target temperature for curing the curable layer 1033 of the first group of stacked semiconductor devices 103, the material type of the curable layers 1033, 1053, the distance or gap between the first and second groups of semiconductor devices 103, 105, etc.

[0028] Figure 4A4 is a schematic cross-sectional view of a semiconductor device assembly 400 according to an embodiment of the present technology. The semiconductor device assembly 400 includes a base substrate 401, a first group of stacked semiconductor devices 403, a second group of stacked semiconductor devices 405, and a third group of stacked semiconductor devices 406. The second and third groups of stacked semiconductor devices 405 and 406 are on opposite sides of the first group of stacked semiconductor devices 403. The semiconductor device packages 403, 405, and 406 are attached to a front side 401a of the base substrate 401, and the base substrate 401 has a back side 401b. In some embodiments, the semiconductor device assembly 400 may include more than three semiconductor device packages.

[0029] like Figure 4A As shown, the thermal assembly 409 of the bonding head 407 is used to heat the first group of stacked semiconductor devices 403 to bond together the semiconductor devices 4031 in the first group of stacked semiconductor devices 403. The semiconductor devices 4031 can be bonded by curing the films 4033 respectively attached to the semiconductor devices 4031. The heat generated by the thermal assembly 409 flows toward the base substrate 401, as shown in the direction D4.

[0030] The semiconductor device assembly 400 also has a cooling unit 411 attached to the back side 401b of the base substrate 401. The back side cooling unit 411 is configured to suppress or prevent the heat generated by the thermal component 409 from being transferred to the second group of stacked semiconductor devices 405 or the third group of stacked semiconductor devices 406 via the base substrate 401. In some embodiments, the back side cooling unit 411 may be formed with a recess 413, which may effectively prevent the back side cooling unit 411 from absorbing too much heat from the base substrate 401. This may be useful because absorbing too much heat may affect the curing process of the cured film 4033. With this arrangement, the curing process of the film 4033 of the first group of stacked semiconductor devices 403 (e.g., particularly the lowest one in FIG. 4) is not affected by the back side cooling unit 411.

[0031] In some embodiments, the back cooling unit 411 may be shaped or formed according to the shape, material and / or characteristics of the base substrate 401. The size of the recess 413 may be determined, for example, based on the thermal conductivity of the base substrate 401 and the load provided by the thermal component 409. For example, in an embodiment where the base substrate 401 has a relatively high thermal conductivity, the size of the recess 413 may be relatively small. Conversely, when the base substrate 401 has a relatively low thermal conductivity, the size of the recess 413 may be relatively large. Figure 4AAs shown, the recess 413 can have a lateral dimension from the side surface 4055 of the second group of stacked semiconductor devices 405 to the side surface 4065 of the third group of stacked semiconductor devices 406. In some embodiments, the recess 413 can have a lateral dimension that is the same as the lateral dimension of the first group of stacked semiconductor devices 403 (e.g., from the first side surface 4035 to the second side surface 4037 opposite the first side surface 4035). In some embodiments, the recess 413 can have a lateral dimension that is the same as the lateral dimension of the first group of stacked semiconductor devices 403 (e.g., from the first side surface 4035 to the second side surface 4037 opposite the first side surface 4035). Figure 4A The lateral dimensions are shown to be somewhere between the lateral dimensions of the first set of stacked semiconductor devices 403 .

[0032] Figure 4B Another structure is shown, in which Figure 4B The base substrate 401 in the semiconductor device assembly 400 is carried by the chuck stage 402, and the back side cooling unit 411 is attached to the chuck stage 402. Therefore, the back side cooling unit 411 is not Figure 4A ) is a feature of the chuck stage 402. In such embodiments, the backside cooling unit 411 can absorb heat generated by the thermal component 409 and inhibit or otherwise prevent such heat from being transferred to the second group of stacked semiconductor devices 405 or the third group of stacked semiconductor devices 406 via the base substrate 401 and the chuck stage 402.

[0033] Figure 5 is a block diagram showing a system incorporating a semiconductor assembly according to an embodiment of the present technology. Figures 1A to 4B Any of the semiconductor devices of the described features may be incorporated into any of a myriad of larger and / or more complex systems, representative examples of which are Figure 5 Schematically shown in FIG. 5 is a system 500. The system 500 may include a processor 501, a memory 503 (e.g., SRAM, DRAM, flash memory, and / or other storage devices), an input / output device 505, and / or other subsystems or components 507. The semiconductor assemblies, devices, and device packages described above with reference to FIGS. 1 to 4 may be included in Figure 5500. The resulting system 500 can be configured to perform any of a variety of appropriate computing, processing, storage, sensing, imaging and / or other functions. Therefore, representative examples of system 500 include, but are not limited to, computers and / or other data processors, such as desktop computers, laptop computers, Internet appliances, handheld devices (e.g., palmtop computers, wearable computers, cellular or mobile phones, personal digital assistants, music players, etc.), tablet computers, multi-processor systems, processor-based or programmable consumer electronics, network computers, and microcomputers. Other representative examples of system 500 include lights, cameras, vehicles, etc. With respect to these and other examples, system 500 can be housed in a single unit, or distributed over multiple interconnected units, for example, via a communication network. Therefore, components of system 500 can include any of local and / or remote memory storage devices and various suitable computer-readable media.

[0034] Figure 6 6 is a flow chart illustrating a method 600 for managing thermal energy in a semiconductor device assembly according to an embodiment of the present technology. At block 601, the method 600 begins by positioning a thermal component adjacent to a first group of stacked semiconductor devices of the semiconductor device assembly. At block 603, the method 600 continues with providing a temperature regulating component relative to the thermal component and adjacent to a second group of stacked semiconductor devices of the semiconductor device assembly. At block 605, the method 600 continues with absorbing at least a portion of the thermal energy generated by the thermal component via the temperature regulating component such that the temperature of the second group of stacked semiconductor devices is maintained within a desired range (e.g., increased by no more than 1 to 5 degrees Celsius).

[0035] For example, method 600 may include transferring at least a portion of the thermal energy generated by the thermal component to the first group of stacked semiconductor devices, such that the temperature of the first group of stacked semiconductor devices increases. In some embodiments, method 600 includes measuring the temperature of the first and / or second group of stacked semiconductor devices, and adjusting the temperature of the temperature regulating component or the temperature of the thermal component in response to a change in the measured temperature. For example, when the temperature of the first group of stacked semiconductor devices (e.g., 103 or 403) has been at a temperature sufficient to cure the curable layer or film for a sufficient time, or when the temperature of the first and / or second group of stacked semiconductor devices exceeds a corresponding threshold temperature, the thermal energy is reduced.

[0036] In some embodiments, a method for managing thermal energy according to the present technology may include: (1) applying thermal energy from a separate thermal component to a first group of stacked semiconductor devices of a semiconductor device assembly; and (2) absorbing at least a portion of the thermal energy generated by the thermal component through a temperature regulating component of the semiconductor device assembly. With this arrangement, this portion of thermal energy can be inhibited from increasing the temperature of the second group of stacked semiconductor devices. In other words, the second group of stacked semiconductor devices can be at least partially thermally isolated from the first group of stacked semiconductor devices. In some embodiments, the method may further include measuring the temperature of the first and / or second group of stacked semiconductor devices. In some embodiments, the method may further include adjusting the temperature of the temperature regulating component in response to a change in the measured temperature. In some embodiments, the method may further include adjusting the temperature of the thermal component in response to a change in the measured temperature.

[0037] The present disclosure is not intended to be exhaustive or limit the present technology to the precise form disclosed herein. Although specific embodiments are disclosed herein for illustrative purposes, various equivalent modifications are possible without departing from the present technology, as will be appreciated by those skilled in the relevant art. In some cases, well-known structures and functions are not shown or described in detail to avoid unnecessarily obscuring the description of the embodiments of the present technology. Although the steps of the method can be presented in a particular order here, alternative embodiments can perform the steps in a different order. Similarly, certain aspects of the present technology disclosed in the context of a specific embodiment can be combined or eliminated in other embodiments. In addition, although the advantages associated with certain embodiments of the present technology have been disclosed in the context of those embodiments, other embodiments may also exhibit these advantages, and not all embodiments must exhibit these advantages or other advantages disclosed herein that fall within the scope of the present technology. Therefore, the present disclosure and associated technology may include other embodiments that are not explicitly shown or described herein.

[0038] Throughout this disclosure, unless the context clearly indicates otherwise, the singular terms "one", "a kind of" and "the" include plural indicators. Similarly, unless the word "or" is explicitly limited to only represent a single item exclusive with other items when referring to a list of two or more items, the use of "or" in such a list will be interpreted as including any single item in (a) the list, all items in (b) the list, or any combination of items in (c) the list. In addition, the term "including" is used throughout the text to represent at least including the features, so that any larger number of the same features and / or additional types of other features are not excluded. References to "an embodiment", "some embodiments" or similar expressions here mean that the specific features, structures, operations or characteristics described in conjunction with the embodiments may be included in at least one embodiment of the present technology. Therefore, the appearance of such phrases or expressions herein does not necessarily refer to the same embodiment. In addition, various specific features, structures, operations or characteristics can be combined in any suitable manner in one or more embodiments.

[0039] From the foregoing, it will be appreciated that specific embodiments of the technology have been described herein for purposes of illustration, but that various modifications may be made without departing from the scope of the invention.The technology is not to be limited, except in the appended claims.

Claims

1. A semiconductor device assembly comprising: a substrate having a first side and a second side opposite the first side; a first set of stacked semiconductor devices on the first side of the substrate; as well as a second group of stacked semiconductor devices adjacent to the first group of stacked semiconductor devices; wherein a tool is configured to bond the semiconductor device assembly, the tool comprising a bonding head configured to apply thermal energy to the first set of stacked semiconductor devices from a side of the first set of stacked semiconductor devices opposite the substrate, wherein the tool further comprises a temperature regulating assembly configured to contact the second side of the substrate in an area at least partially vertically aligned with the second set of stacked semiconductor devices and not contact the second side of the substrate in any area vertically aligned with the first set of stacked semiconductor devices, and The temperature regulating component is configured to absorb at least a portion of the thermal energy applied to the first group of stacked semiconductor devices and thereby inhibit the thermal energy from heating the second group of stacked semiconductor devices.

2. The semiconductor device assembly of claim 1, wherein the temperature regulating component is positioned relative to the first group of stacked semiconductor devices and the second group of stacked semiconductor devices to at least partially thermally isolate the second group of stacked semiconductor devices from the first group of stacked semiconductor devices. The semiconductor device assembly according to claim 1 , wherein the temperature regulating component has a groove. 4 . The semiconductor device assembly of claim 3 , wherein the recess is adjacent to the first set of stacked semiconductor devices. The semiconductor device assembly of claim 1 , wherein the temperature regulating component is a ring.

6. The semiconductor device assembly of claim 1, wherein the first set of stacked semiconductor devices has a first lateral dimension, and wherein the temperature regulating component has a second lateral dimension that is greater than the first lateral dimension.

7. The semiconductor device assembly of claim 1, wherein the temperature regulating component has an edge, and wherein the second set of stacked semiconductor devices has a side, and wherein the edge of the temperature regulating component is aligned with the side of the second set of stacked semiconductor devices.

8. The semiconductor device assembly of claim 1, wherein the first set of stacked semiconductor devices has a first side, and wherein the second set of stacked semiconductor devices has a second side, and wherein the first side and the second side define a region.

9. The semiconductor device assembly of claim 8, wherein the temperature regulating component is in the region.

10. The semiconductor device assembly of claim 1, wherein the temperature regulation component is an active cooling unit.

11. The semiconductor device assembly of claim 1, wherein the temperature regulation component is a passive cooling unit. 12 . The semiconductor device assembly according to claim 1 , wherein the temperature regulating component has a rectangular ring shape.

13. The semiconductor device assembly of claim 1, wherein the temperature regulation component is positioned to absorb the portion of the thermal energy.

14. A semiconductor device assembly comprising: a substrate having a first side and a second side opposite the first side; a first set of stacked semiconductor devices on the first side of the substrate; a second group of stacked semiconductor devices adjacent to one side of the first group of stacked semiconductor devices; as well as a third group of stacked semiconductor devices adjacent to an opposite side of the first group of stacked semiconductor devices; wherein a tool is configured to bond the semiconductor device assembly, the tool comprising a bonding head configured to apply thermal energy to the first set of stacked semiconductor devices from a side of the first set of stacked semiconductor devices opposite the substrate, and The tool further includes a temperature regulating component configured to contact the second side of the substrate in an area at least partially vertically aligned with the second group of stacked semiconductor devices and not contact the second side of the substrate in any area vertically aligned with the first group of stacked semiconductor devices, the temperature regulating component configured to be positioned relative to the second group of stacked semiconductor devices to absorb at least a portion of the thermal energy and thereby at least partially thermally isolate the second group of stacked semiconductor devices from the first group of stacked semiconductor devices.

15. The semiconductor device assembly according to claim 14, wherein the temperature regulating component has a groove, and The recess is aligned with the first set of stacked semiconductor devices.

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