Vehicle lighting

Abstract

Provided is a vehicle lamp that can be miniaturized at low cost and can reduce the number of components. The vehicle lamp comprises: a light emitting portion (3) for emitting light; and a lens (2) including a plurality of surfaces and allowing light from the light emitting portion (3) to directly enter and causing the emitted light emitted through each surface to overlap to form a predetermined light distribution pattern, wherein the light emitting portion (3) comprises: a first semiconductor light source disposed at or near the focus of the lens (2) and forming at least a portion of a low beam light distribution pattern on the lens (2); and a second semiconductor light source disposed below the first semiconductor light source and forming an upper light distribution pattern on the lens (2).

Description

Technical Field

[0001] The invention relates to a vehicle lamp. Background Art

[0002] Conventionally, a vehicle lamp is used that directly inputs light from a semiconductor light source into a lens and emits the directly input light from the lens. Among such vehicle lamps, a vehicle lamp that forms a low beam and a high beam has been proposed (for example, see Patent Documents 1 to 3).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2008-084876

[0006] Patent Document 2: Japanese Patent Application Publication No. 2009-193953

[0007] Patent Document 3: Japanese Patent Application Publication No. 2014-154356 Summary of the invention

[0008] Problems to be solved by the invention

[0009] The prior art described in Patent Document 1 realizes the miniaturization of the lamp by providing a light source for a high beam and a light source for a low beam in one light-emitting portion. However, in order to clearly form a predetermined light distribution pattern, a lampshade is provided between the light-emitting portion and the lens, for example. Therefore, the weight of the lamp itself increases and the number of components increases. As for the prior art described in Patent Document 2, since the lampshade is provided, the weight of the lamp itself increases and the number of components increases. In addition, in the prior art described in Patent Document 3, a lamp unit for a high beam, a lamp unit for a low beam, and a lamp unit for diffuse light distribution are provided in one vehicle lamp, each lamp unit has a different light-emitting portion, and a plurality of light sources are arranged in each light-emitting portion. Therefore, the predetermined light distribution pattern can be formed relatively clearly by using the plurality of light sources in each light-emitting portion, but as a whole, the weight increase and the increase in the number of components cannot be avoided. Therefore, the prior art described in Patent Documents 1 to 3 cannot realize the miniaturization of the lamp itself and cannot achieve the reduction of the number of components.

[0010] The present disclosure is a solution proposed in view of such a situation, and can realize miniaturization of the lamp itself and reduction in the number of components.

[0011] Solutions to Solve Problems

[0012] A vehicle lamp as one embodiment of the present invention comprises: a light-emitting portion that emits light; and a lens including a plurality of surfaces, so that light from the light-emitting portion is directly incident and the emitted light emitted through each of the surfaces overlaps to form a predetermined light distribution pattern, the light-emitting portion comprises: a first semiconductor-type light source, which is arranged at or near the focus of the lens, so that the lens forms at least a part of the light distribution pattern for a low beam; and a second semiconductor-type light source, which is arranged below the first semiconductor-type light source, so that the lens forms an upper light distribution pattern.

[0013] Effects of the Invention

[0014] According to one aspect of the present disclosure, it is possible to achieve miniaturization of the lamp itself and reduction in the number of components. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a perspective view of the vehicle lamp according to the first embodiment to which the present disclosure is applied.

[0016] Figure 2 It is an exploded perspective view of the vehicle lamp according to the first embodiment to which the present disclosure is applied.

[0017] Figure 3 This is a diagram showing an example of front view of the light emitting unit 3 according to the first embodiment of the present disclosure.

[0018] Figure 4 This is a diagram showing an example of front view of the incident surface 21 of the lens 2 as viewed from the light emitting unit 3 according to the first embodiment of the present disclosure.

[0019] Figure 5 Embodiment 1 of the present disclosure is applied Figure 4 A-A line cross-sectional view.

[0020] Figure 6 This is a diagram showing an example of a low-beam light distribution pattern LP including an oblique cutoff line CL formed by a surface S1 (oblique cutoff line forming region) according to the first embodiment to which the present disclosure is applied.

[0021] Figure 7 This is a diagram showing an example of expressing, by isophotinometers, a low-beam light distribution pattern LP formed by the lens 2 when the first semiconductor-type light source 31 according to the first embodiment of the present disclosure is turned on.

[0022] Figure 8 This is a diagram showing an example of an upward light distribution pattern UP formed by the lens 2 when the second semiconductor-type light source 32 according to the first embodiment of the present disclosure is turned on, expressed by isophot lines.

[0023] Fig. 9This is a diagram showing an example of expressing, by isophot lines, a high-beam light distribution pattern HP formed by the lens 2 when both the first semiconductor-type light source 31 and the second semiconductor-type light source 32 according to Embodiment 1 of the present disclosure are turned on.

[0024] Fig.10 It is a perspective view of the first lamp unit 8a and the second lamp unit 8b according to the second embodiment to which the present disclosure is applied.

[0025] Fig.11 This is a diagram showing an example of expressing the focusing light distribution pattern SP, the upward light distribution pattern UP2, and the diffusing light distribution pattern WP respectively formed by the first lamp unit 8a and the second lamp unit 8b according to the second embodiment to which the present disclosure is applied, using isophot lines.

[0026] Fig.12 This is a diagram showing another example of the front view of the light emitting section 3 according to the first embodiment of the present disclosure. DETAILED DESCRIPTION

[0027] Hereinafter, an embodiment of a vehicle lamp to which the present disclosure is applied will be described in detail based on the drawings. In addition, the present disclosure is not limited to the embodiment.

[0028] Implementation method 1.

[0029] (Schematic structure)

[0030] Figure 1 It is a perspective view of the vehicle lamp according to the first embodiment to which the present disclosure is applied. Figure 2 : This is an exploded stereoscopic view of a vehicle lamp to which embodiment 1 of the present disclosure is applied. The vehicle lamp is, for example, arranged on the left and right sides of the front of a vehicle not shown in the figure, and has the same structure on the left and right sides, and functions as a headlight. The vehicle lamp includes a frame 1, a lens 2, a light-emitting portion 3, a substrate 4, and a heat sink 6. The heat sink 6 is composed of a metal component or a resin component with high thermal conductivity, and the substrate 4 carrying the light-emitting portion 3 is mounted via a grease 5 that improves the heat dissipation performance. The substrate 4 is provided with an unillustrated electrical connector for power supply, etc., and various controls such as lighting and extinguishing are performed while power is supplied to the light-emitting portion 3 that emits light. In addition, the frame 1 functions as a bracket for the lens 2, but the description of the threaded fixing holes and the boss holes, etc., can be easily understood by those skilled in the art, so their description is omitted.

[0031] (Main structure)

[0032] Hereinafter, the light emitting unit 3 will be described in detail. Figure 3: This is a diagram showing an example of a front view of the light emitting unit 3 according to Embodiment 1 of the present disclosure. The light emitting unit 3 includes a first semiconductor-type light source 31 and a second semiconductor-type light source 32, each of which is composed of a package sealed by a sealing resin component not shown. The first semiconductor-type light source 31 and the second semiconductor-type light source 32 are, for example, self-luminous semiconductor-type light sources such as LED or OLED (organic EL) or LD (semiconductor laser, laser diode or diode laser), and each has a planar rectangular shape (planar rectangular shape). In addition, the shape of the first semiconductor-type light source 31 and the second semiconductor-type light source 32 may also be a square. In addition, Figure 3 The X-axis shown is a horizontal axis in the left-right direction passing through the center O of the light-emitting surface of the light-emitting unit 3 . Figure 3 The Y axis shown is a vertical axis in the up-down direction passing through the center O of the light emitting surface of the light emitting unit 3 .

[0033] The first semiconductor light source 31 is configured with its long side along the X-axis and its short side along the Y-axis, with the center of the first semiconductor light source 31 as the center O. The second semiconductor light source 32 is configured below the first semiconductor light source 31, with its long side along the X-axis and its short side along the Y-axis. Figure 3 In one example, the light emitting area of ​​the second semiconductor-type light source 32 is smaller than that of the first semiconductor-type light source 31. In addition, the light emitting area of ​​the second semiconductor-type light source 32 may be the same as that of the first semiconductor-type light source 31. In addition, the brightness of the second semiconductor-type light source 32 is the same as or higher than that of the first semiconductor-type light source 31. In addition, Figure 3 In one example, assuming left-side traffic, the second semiconductor-type light source 32 is arranged on the right side of the center O of the first semiconductor-type light source 31 in front view as viewed from the front side of the vehicle lamp.

[0034] Figure 4 1 is a diagram showing an example of front view of the incident surface 21 of the lens 2 as viewed from the light emitting unit 3 according to the first embodiment of the present disclosure. Figure 4As shown, the incident surface 21 of the lens 2 includes a plurality of surfaces S1 to S8. Among the plurality of surfaces S1 to S8, the surface S1 is a part of the upper portion of the lens 2, formed on the right side, and functions as an inclined cutoff line forming region. The function of the inclined cutoff line forming region will be described in detail later. The surface S3 is formed at a position symmetrical to the surface S1 with respect to the Y axis, and has a surface area substantially the same as that of the surface S1. The surface S2 is formed between the surface S1 and the surface S3. The surface S6 is formed at a position symmetrical to the surface S1 with respect to the X axis, and has a surface area substantially the same as that of the surface S1. The surface S4 is formed at a position symmetrical to the surface S3 with respect to the X axis, and has a surface area substantially the same as that of the surface S3. The surface S8 is formed at a position substantially symmetrical to the surface S2 with respect to the X axis. The surface S5 is formed at a position lower than the surface S4. The surface S7 is formed between the surface S2 and the surface S8, and the line passing through the center coincides with the center O.

[0035] Figure 5 Embodiment 1 of the present disclosure is applied Figure 4 A-A line cross-sectional view. Figure 6 : is a diagram showing an example of a low-beam light distribution pattern LP including an oblique cutoff line CL formed by a surface S1 (oblique cutoff line forming region) according to the first embodiment to which the present disclosure is applied. Figure 5 In order to clearly indicate the direction of light emitted from the light emitting unit 3, the hatching of the cross section of the lens 2 is intentionally omitted. Figure 6 In the following figures, the symbols "VU-VD" represent the vertical lines in the upper and lower parts, and the symbols "HL-HR" represent the horizontal lines in the left and right parts.

[0036] Figure 5 The Z axis shown is a normal line (perpendicular line) passing through the center O of the first semiconductor-type light source 31, that is, Figure 3 , Figure 4 The X-axis and Figures 3 to 5 The axis in the front-to-back direction (reference optical axis) is orthogonal to the Y axis shown in the figure. That is, the first semiconductor-type light source 31 is configured so that the center O of the first semiconductor-type light source 31 faces the front side of the reference optical axis as the Z axis. In this way, X, Y, and Z constitute an orthogonal coordinate system (X-Y-Z orthogonal coordinate system). Therefore, the center of the orthogonal coordinate system is made consistent with the center O of the first semiconductor-type light source 31. Figure 5 As shown, the center O of the first semiconductor light source 31 is located at or near the focus F of the lens 2 and is located on or near the reference optical axis serving as the Z axis. Therefore, the first semiconductor light source 31 is disposed at or near the focus F of the lens 2.

[0037] In addition, as described above, the second semiconductor-type light source 32 is arranged below the first semiconductor-type light source 31. The first semiconductor-type light source 31 is arranged at the focal point F of the lens 2 or near the focal point F. Therefore, the second semiconductor-type light source 32 is arranged below the focal point F of the lens 2 or near the focal point F, and is therefore arranged at a position farther from the focal point F of the lens 2 than the first semiconductor-type light source 31.

[0038] In addition, as described above, the center O of the light emitting surface of the first semiconductor-type light source 31 is located on or near the reference optical axis as the Z axis. Therefore, it can also be said that the first semiconductor-type light source 31 is arranged on or near the reference optical axis as the Z axis. On the other hand, the second semiconductor-type light source 32 is arranged on or below the reference optical axis as the Z axis, and is therefore arranged at a position farther from the reference optical axis as the Z axis than the first semiconductor-type light source 31.

[0039] The lens 2 includes an exit surface 22 in addition to the incident surface 21. On the incident surface 21 side, the surface S1 and the surface S6 are convex toward the first semiconductor-type light source 31. Although not shown in the figure, the surface S3 and the surface S4 are also convex toward the first semiconductor-type light source 31. The lens 2 allows the light from the light-emitting section 3 to directly enter from the incident surface 21, and the exit light is emitted from the exit surface 22. The surface S1 is formed above the reference optical axis, forming a Figure 6 The oblique cutoff line CL of the low beam light distribution pattern LP is shown in FIG. The surface S1 forms a plurality of projection images PI by the light reaching the surface S1. Therefore, according to the surface shape of the surface S1, as shown in FIG. Figure 6 As shown in FIG. 1 , the projection images PI of the surface S1 are overlapped one by one, thereby forming an oblique cutoff line CL of the low beam light distribution pattern LP. Therefore, the lens 2 forms a predetermined light distribution pattern including the oblique cutoff line CL. In particular, the projection image PI of the surface S1 is as shown in FIG. Figure 5As shown in the optical paths LP1 and LP2 shown in the figure, the light is focused near the oblique cutoff line CL. As a result, the light distribution near the oblique cutoff line CL is formed into a hot zone with a higher luminance than other parts of the low-beam light distribution pattern LP. In addition, since such a hot zone is formed, the surface S1 also functions as a hot zone forming area. In addition, compared with the light emitted from the first semiconductor-type light source 31, the distance from the light emitted from the second semiconductor-type light source 32 to the lens 2 is longer, so compared with the projection image PI of the light emitted from the lens 2 using the light emitted from the first semiconductor-type light source 31, the projection image of the light emitted from the lens 2 using the light emitted from the second semiconductor-type light source 32 can be made smaller. As a result, the luminance near the center (near the intersection of the H line and the V line) can be increased, so it is easy to form a high-beam light distribution pattern HP with excellent far-field visual confirmation. In addition, when the first semiconductor-type light source 31 and the second semiconductor-type light source 32 are the same size, the brightness (light beam) of the first semiconductor-type light source 31 is less than the brightness (light beam) of the second semiconductor-type light source 32. In addition, when the first semiconductor-type light source 31 is larger than the second semiconductor-type light source 32, the brightness (light beam) of the first semiconductor-type light source 31 is ≤ the brightness (light beam) of the second semiconductor-type light source 32. That is, at least the second semiconductor-type light source 32 emitting the high beam emits stronger light. The reason for this is that the light distribution pattern HP for the high beam described later needs to be brighter than the light distribution pattern LP for the low beam.

[0040] (effect)

[0041] Next, the operation of the vehicle lamp in this embodiment will be described. Figure 7 1 is a diagram showing an example of a low-beam light distribution pattern LP formed by the lens 2 when the first semiconductor-type light source 31 of Embodiment 1 of the present disclosure is turned on, represented by isophotastics. The first semiconductor-type light source 31 forms a low-beam light distribution pattern LP on the lens 2. Specifically, the substrate 4 controls the second semiconductor-type light source 32 to be in an off state, and controls the first semiconductor-type light source 31 to be in a turned-on state. Thus, the light-emitting unit 3 emits the light emitted from the first semiconductor-type light source 31 toward the lens 2. The light emitted from the first semiconductor-type light source 31 is refracted from the incident surface 21 of the lens 2 into the lens 2. At this time, the incident light is light-distributed and controlled in the incident surface 21. The incident light that has been light-distributed is refracted and emitted to the outside from the exit surface 22 of the lens 2. At this time, the emitted light is light-distributed and controlled in the exit surface 22. The emitted light is irradiated forward as the low-beam light distribution pattern LP. Here, part of the light emitted from the first semiconductor-type light source 31 enters from the surface S1 and is emitted from the upper portion of the emission surface 22 .

[0042] Figure 8This is a diagram showing an example of an upper light distribution pattern UP formed by the lens 2 when the second semiconductor-type light source 32 of Embodiment 1 of the present disclosure is turned on, expressed by isopoptotic lines. The light-emitting area of ​​the second semiconductor-type light source 32 is smaller than the light-emitting area of ​​the first semiconductor-type light source 31, so that the projection image PI can be made smaller. Therefore, it overlaps the central part of the high-beam light distribution pattern HP described later, which can contribute to the maximum light intensity of the central part.

[0043] Fig. 9 This is a diagram showing an example of a high-beam light distribution pattern HP formed by the lens 2 when both the first semiconductor-type light source 31 and the second semiconductor-type light source 32 of Embodiment 1 of the present disclosure are turned on, represented by isopoptotic lines. The high-beam light distribution pattern HP is a pattern synthesized from a plurality of light distribution patterns. Specifically, the substrate 4 controls the first semiconductor-type light source 31 to be turned on, and the second semiconductor-type light source 32 is also controlled to be turned on. Therefore, the light emitting unit 3 emits the light emitted from the first semiconductor-type light source 31 and the light emitted from the second semiconductor-type light source 32 toward the lens 2. The lens 2 irradiates Figure 7 The low beam light distribution pattern LP and Figure 8 The upper light distribution pattern UP shown in the figure. Figure 7 The low beam light distribution pattern LP and Figure 8 The upper light distribution pattern UP shown in the figure forms Fig. 9 The high beam light distribution pattern HP is shown. Figure 8 The upper light distribution pattern UP shown is located at Figure 7 That is, the second semiconductor-type light source 32 forms an upward light distribution pattern UP that irradiates light upward from the low-beam light distribution pattern LP on the lens 2 .

[0044] (Effect)

[0045] The effect of the vehicle lamp in the present embodiment is described below. Compared with the light emitted from the first semiconductor-type light source 31, the distance from the light emitted from the second semiconductor-type light source 32 to the lens 2 is longer, so the projection image PI of the light emitted from the lens 2 using the light emitted from the first semiconductor-type light source 31 can be made smaller. Therefore, the luminous intensity near the center (near the intersection of the H line and the V line) can be increased, so it is easy to form a high-beam light distribution pattern HP with excellent visual confirmation from a distance. Therefore, as a whole, it is possible to avoid an increase in weight and the number of components, so that the lamp itself can be miniaturized and the number of components can be reduced.

[0046] In addition, as an aside, when the vehicle is loaded, Figure 3As shown, when the second semiconductor light source 32 is observed from the front side of the vehicle lamp, it is arranged below the first semiconductor light source 31 and to the right of the center O of the first semiconductor light source 31, thereby clearly forming an oblique cut-off line CL in the low beam distribution and forming a high-beam distribution pattern HP with high luminosity near the center in the high beam distribution.

[0047] Specifically, when the light from the arranged light source is irradiated, the lens type light distribution forms a predetermined light distribution pattern in the direction of vertical and horizontal inversion. Figure 3 In the illustrated vehicle lamp mounting state, the second semiconductor-type light source 32 is located at the lower left, and therefore moves to the upper right position as a light distribution pattern for illumination.

[0048] In other words, in Fig. 9 In the case of comparative observation, the originally predetermined light distribution pattern is located at the lower left of the intersection of the H line and the V line, but due to the up-down and left-right inversion, the light source image of the second semiconductor-type light source 32 is irradiated in a manner such that the center of the light source image is located near the upper right of the intersection of the H line and the V line. Therefore, in the low beam, the first semiconductor-type light source 31 is located at the focus F of the lens 2, so that an appropriate low beam light distribution can be formed, and in the high beam, since the second semiconductor-type light source 32 is deviated to the lower left than the center O of the first semiconductor-type light source 31 in the state of being mounted on the vehicle lamp, the optimal light distribution can be formed as the high beam light distribution, and a light distribution suitable for two functions can be formed in one lens 2.

[0049] In the first embodiment, the lens 2 forms a surface S1 for forming an oblique cutoff line CL of the low-beam light distribution pattern LP. Therefore, the oblique cutoff line CL is formed by the surface S1, so that the light intensity near the oblique cutoff line CL can be improved. Therefore, the glare of the low-beam light distribution pattern LP can be reliably prevented, and the low-beam light distribution pattern LP suitable for vehicle driving can be provided.

[0050] In the first embodiment, the vicinity of the oblique cutoff line CL is the hot zone, but the hot zone is not limited to the vicinity of the oblique cutoff line CL and can be appropriately changed.

[0051] In addition, in Embodiment 1, the light emitting area of ​​the second semiconductor-type light source 32 is the same as or smaller than that of the first semiconductor-type light source 31. The projection image PI projected onto the low-beam light distribution pattern LP is determined based on the positional relationship between the lens 2 and the first semiconductor-type light source 31. Therefore, even if the second semiconductor-type light source 32 and the first semiconductor-type light source 31 have the same light emitting area, the projection image of the high beam and the projection image PI of the low beam can be made different in size. Therefore, it is particularly obvious that the high beam and the low beam can be realized at a low cost. In addition, in the case where the light emitting area of ​​the second semiconductor-type light source 32 is smaller than that of the first semiconductor-type light source 31, the projection image of the light emitted from the second semiconductor-type light source 32 can be made smaller, and the luminosity near the center (near the intersection of the H line and the V line) can be increased, so that the high beam light distribution pattern HP with excellent far-field visual confirmation can be easily formed.

[0052] Implementation method 2.

[0053] In the second embodiment, description of the same configuration and function as in the first embodiment is omitted. In the second embodiment, a case where a member having a different configuration of the lens 2 is used adjacent to the above-described vehicle lamp will be described. Fig.10 1 is a perspective view of a first lamp unit 8a and a second lamp unit 8b according to Embodiment 2 of the present disclosure. The structure and function of the first lamp unit 8a are the same as those of the vehicle lamp described in Embodiment 1. Fig.11 This is a diagram showing an example of expressing the focusing light distribution pattern SP, the upward light distribution pattern UP2, and the diffusing light distribution pattern WP respectively formed by the first lamp unit 8a and the second lamp unit 8b according to the second embodiment to which the present disclosure is applied, using isophot lines. Fig.11 (a) shows an example of expressing the light distribution pattern SP for focusing by isophotinometers. Fig.11 (b) shows an example of an upper light distribution pattern UP2 for high beam expressed by isophotinometer lines. Fig.11 (c) An example of expressing the diffusion light distribution pattern WP by isophotinometers.

[0054] (Schematic structure)

[0055] The lens 2a of the first lamp unit 8a is fixed by the frame 1a. In the first lamp unit 8a, the first semiconductor light source 31 is turned on to form Fig.11 The light distribution pattern SP for focusing shown in (a) is formed by lighting the second semiconductor-type light source 32. Fig.11 (b) The upper light distribution pattern UP2 is shown. The lens 2b of the second lamp unit 8b is fixed by the frame 1b. The second lamp unit 8b is always lit in the low beam mode, and the second lamp unit 8b is always lit in the high beam mode, thereby forming Fig.11(c) shows the diffusion light distribution pattern WP. Therefore, the high beam is formed by combining the focusing light distribution pattern SP, the upper light distribution pattern UP2 and the diffusion light distribution pattern WP.

[0056] (Effect)

[0057] The first lamp unit 8a shares the function of forming the focusing light distribution pattern SP, and the second lamp unit 8b shares the function of forming the diffusion light distribution pattern WP, so that the lamp can be divided into focusing and diffusion.

[0058] As mentioned above, the vehicle lamp to which the present disclosure is applied has been described based on the embodiment, but the present disclosure is not limited thereto and may be modified within the scope not departing from the gist of the present disclosure.

[0059] In addition, for example, the second semiconductor-type light source 32 is arranged on the right side of the center O of the light-emitting surface of the light-emitting portion 3 when viewed from the front side of the vehicle lamp due to the assumption of left-side traffic, but the present invention is not particularly limited to this. For example, the second semiconductor-type light source 32 may be arranged on the left side of the center O of the light-emitting surface of the light-emitting portion 3 when the vehicle lamp is viewed from the front side due to the assumption of left-side traffic.

[0060] For example, the configuration in which the surface S1 functions as the inclined cutoff line forming region assuming left-side traffic has been described, is not particularly limited thereto. For example, the surface S3 may function as the inclined cutoff line forming region when assuming right-side traffic has been assumed.

[0061] Fig.12 This is a diagram showing another example of the front view of the light emitting section 3 according to the first embodiment of the present disclosure. Figure 3 The light emitting unit 3 shown in the figure is composed of a package formed by sealing the first semiconductor type light source 31 and the second semiconductor type light source 32 with a sealing resin component, but it is not limited to this. Fig.12 As shown, the first semiconductor-type light source 31 and the second semiconductor-type light source 32 are both formed by a single package. Thus, when the first semiconductor-type light source 31 and the second semiconductor-type light source 32 are mounted on the substrate 4, the positional relationship between the two can be maintained.

[0062] Explanation of symbols

[0063] 1, 1a, 1b—frame, 2, 2a, 2b—lens, 21—incident surface, 22—exit surface, 3—light emitting portion, 31—first semiconductor-type light source, 32—second semiconductor-type light source, 4—substrate, 5—grease, 6—heat sink, 8a—first lamp unit, 8b—second lamp unit, S1—surface (inclined cutoff line forming area), S2~S8—surface, CL—inclined cutoff line, PI—projected image, O—center, F—focus, LP—light distribution pattern for low beam, UP, UP2—upper light distribution pattern, HP—light distribution pattern for high beam, SP—light distribution pattern for focusing, WP—light distribution pattern for diffusion.

Claims

1. A vehicle lamp, characterized in that: have: a light emitting portion that emits light; as well as a lens having an incident surface into which the light from the light emitting unit directly enters, which includes a plurality of surfaces when viewed from the front of the light emitting unit, and a lens that overlaps the emitted lights emitted from the plurality of surfaces to form a predetermined light distribution pattern, The light emitting unit includes: a first semiconductor-type light source disposed at or near the focal point of the lens so that the lens forms at least a portion of a low-beam light distribution pattern; as well as a second semiconductor light source that causes the lens to form an upward light distribution pattern that irradiates light upward from the low-beam light distribution pattern; The center of the first semiconductor-type light source is located at or near the focus. The second semiconductor-type light source is arranged below the first semiconductor-type light source, and its center is offset from the center of the first semiconductor-type light source in a horizontal direction in a vehicle-mounted state. A distance that the light emitted from the second semiconductor-type light source reaches the lens is longer than a distance that the light emitted from the first semiconductor-type light source reaches the lens.

2. The vehicle lamp according to claim 1, characterized in that: A light emitting area of ​​the second semiconductor-type light source is the same as or smaller than a light emitting area of ​​the first semiconductor-type light source.

3. The vehicle lamp according to claim 1, characterized in that: have: A first lamp unit having the light emitting portion and the lens; and The second lamp unit forms a diffusion light distribution pattern different from the light distribution pattern of the first lamp unit.

4. The vehicle lamp according to claim 1, characterized in that: For the above lens, A portion of each of the plurality of surfaces located at an upper portion of the lens is configured as an oblique cutoff line forming region for forming an oblique cutoff line of the light distribution pattern.

5. The vehicle lamp according to claim 1, characterized in that: For the above lens, A portion of each of the plurality of surfaces is configured as a hotspot forming region for forming a hotspot having a higher luminance than other regions in the light distribution pattern.

Images