Method for producing a plurality of components, component and component composite consisting of components

Abstract

A component assembly (100) is proposed, which is composed of a plurality of components (10), a modified sacrificial layer (4) and a common intermediate carrier (90), wherein the components each have a semiconductor body (2) having an active region (23), wherein the semiconductor bodies are arranged on the intermediate carrier and are laterally spaced apart from one another by separating trenches (4T). The sacrificial layer is arranged between the intermediate carrier and the semiconductor bodies in a vertical direction, wherein the sacrificial layer has a plurality of retaining elements (3) between the semiconductor bodies and the common intermediate carrier, and wherein the semiconductor bodies are mechanically connected to the intermediate carrier only via the retaining elements. The retaining elements are surrounded by cavities (4H) in a lateral direction. The semiconductor bodies are designed to be detachable from the intermediate carrier, wherein the retaining elements release the semiconductor bodies from the intermediate carrier under mechanical load or by irradiation or by etching. Furthermore, a component (10) having a semiconductor body (2) detached from such a component assembly (100) and a method for producing a plurality of such components are proposed.

Description

Technical Field

[0001] A method for producing a plurality of components, in particular a transferable and thus printable component, is proposed. In addition, a component and a component composite consisting of a plurality of components are proposed. Background Art

[0002] When transferring components, preferably structures are required, by means of which the components are arranged on the intermediate carrier and stably held therein before they are removed from the intermediate carrier in a targeted and secure manner, for example by means of adhesive stamping, and applied to the mounting surface. For this purpose, anchoring structures can be formed, which temporarily fix the components to the intermediate carrier. It has been found that the formation of such anchoring structures and the reliable detachment of the components from the intermediate carrier are associated with great effort and require great care. Therefore, the installation of a large number of components is both time-consuming and cost-intensive. Summary of the invention

[0003] One object is to provide a reliable and cost-effective method for producing a plurality of components or for producing a component assembly consisting of components, which can be quickly and simply mounted on a predetermined target surface. Another object is to provide such a component assembly or a component separated from a component assembly.

[0004] The object is achieved by a component assembly, a component and a method for producing a plurality of components according to embodiments of the present invention. Other embodiments and improvements of the method or the component assembly or the component are the subject of other embodiments.

[0005] According to at least one embodiment of the method for manufacturing a plurality of components, in particular components for optoelectronic devices, a semiconductor structure is provided on an intermediate carrier. In particular, a sacrificial layer is arranged between the semiconductor structure and the intermediate carrier in a vertical direction. For example, the semiconductor structure is based on a III-V or III-VI compound semiconductor material. The semiconductor structure can have a first semiconductor layer of a first carrier type and a second semiconductor layer of a second carrier type. In particular, the semiconductor structure has an optically active region, which is arranged between the first semiconductor layer and the second semiconductor layer and is, for example, established for generating or detecting electromagnetic radiation. The semiconductor structure can be divided into a plurality of laterally spaced semiconductor bodies, each of which has a sub-region of the optically active region of the first semiconductor layer, the second semiconductor layer and the semiconductor structure.

[0006] The intermediate carrier can be a growth substrate on which the semiconductor structure is epitaxially grown. The semiconductor structure and the sacrificial layer can be based on the same semiconductor material system. For example, the sacrificial layer is a buffer layer between the semiconductor structure and the intermediate carrier, wherein the semiconductor structure, the sacrificial layer and the intermediate carrier can be based on the same III-V or III-VI compound semiconductor material. If the semiconductor structure, the sacrificial layer and the intermediate carrier are based on the same III-V compound semiconductor material, then the semiconductor structure, the sacrificial layer and the intermediate carrier have the same element from the third main group, such as B, Al, Ga or In, and the same element from the fifth main group, such as N, P or As.

[0007] The term "III-V compound semiconductor material" includes in particular groups of binary, ternary or quaternary compounds, which contain at least one element from the third main group and at least one element from the fifth main group, for example nitride compound semiconductors or phosphide compound semiconductors. Such binary, ternary or quaternary compounds can also have dopants and additional components. For example, the intermediate carrier is a GaAs growth substrate and the sacrificial layer is an AlGaAs layer. The semiconductor structure can be a layer sequence composed of GaAs compound semiconductor material, in particular composed of a binary, ternary or quaternary GaAs compound.

[0008] It is possible that the intermediate carrier is different from the growth substrate. For example, the intermediate carrier is composed of a compound semiconductor material, ie silicon, germanium, ceramic, glass or of plastic. In this case, the sacrificial layer can also be a semiconductor layer or can also be different from a semiconductor layer.

[0009] According to at least one embodiment of the method, a plurality of separation trenches are formed through the semiconductor structure to form a plurality of laterally spaced apart semiconductor bodies, wherein the semiconductor bodies each have a sub-region of an active area of ​​the semiconductor structure. In particular, the separation trenches extend through the semiconductor structure in a vertical direction. In the separation trenches, the sacrificial layer can be exposed, partially removed or completely removed. By forming the separation trenches, the sacrificial layer can form a plurality of retaining elements. If the sacrificial layer in the separation trenches has been completely removed, the surface of the intermediate carrier can be partially exposed.

[0010] A transverse direction is understood to be a direction which extends in particular parallel to a main extension plane of the intermediate carrier and / or the component. For example, the transverse direction extends parallel to the sacrificial layer. A vertical direction is understood to be a direction which is oriented in particular perpendicular to a main extension plane of the intermediate carrier and / or the component. The vertical direction and the transverse direction are approximately orthogonal to one another.

[0011] According to at least one embodiment of the method, the sacrificial layer is partially removed so that a cavity is formed between the intermediate carrier and the semiconductor body in the vertical direction. The cavity can be directly connected to the separation trench. In a top view of the intermediate carrier, the cavity can be at least partially or completely covered by the semiconductor body. For example, the cavity is produced by means of an etching method. The etchant required for this purpose can be transported into the separation trench or transported into another introduction channel to achieve lateral local etching of the sacrificial layer. In particular, the remaining sub-region of the sacrificial layer forms a retaining element, which further promotes the mechanical connection between the intermediate carrier and the semiconductor body. It is feasible that each laterally spaced semiconductor body is mechanically connected to the intermediate carrier only by a retaining element. In a top view of the intermediate carrier, the semiconductor body can overlap not only with the retaining element but also with the cavity.

[0012] It is also possible that the cavity is formed only by the separating trenches. In this case, the cavity is located next to the semiconductor body and has no overlap with the semiconductor body in a plan view.

[0013] In a top view, each individual semiconductor body can partially or completely cover a single holding element or a plurality of holding elements. It is also possible that in a top view of the intermediate carrier, a plurality of adjacent semiconductor bodies cover a common holding element. In this case, the common holding element can partially or completely cover at least one separating trench. The laterally spaced semiconductor bodies are mechanically connected to one another via a common holding element.

[0014] The semiconductor bodies each have a main surface facing the intermediate carrier, which is partially covered by one or more holding elements and partially not covered by one or more holding elements. For example, up to 30%, 40%, 50%, 60%, 70% or up to 80% of the main surface of the semiconductor body is covered by one or more holding elements. On the other hand, at least 10%, 20%, 30% or at least 33% of the main surface of the semiconductor body can be covered by one or more holding elements.

[0015] According to at least one embodiment of the method, the remaining sacrificial layer is modified. For example, the retaining element is oxidized. Due to the oxidation, the resulting change in the porosity or structure of the material of the retaining element leads to a reduction in the mechanical adhesion between the semiconductor body and the intermediate carrier. Under mechanical load, the retaining element mechanically breaks or detaches from the semiconductor body or from the intermediate carrier, whereby the semiconductor body is released from the intermediate carrier. The semiconductor body can thus be designed to be detachable from the intermediate carrier, wherein the retaining element releases the semiconductor body from the intermediate carrier under mechanical load. In this case, the interface between the two layers opens or the material of the retaining structure itself breaks.

[0016] The holding element can thus be formed from a porous material. The porosity of the material of the holding element can be between 1% and 50%, for example between 1% and 40%, between 1% and 30%, between 1% and 20%, between 1% and 10% or between 10% and 50%, between 15% and 50% or between 20% and 50%, inclusive. In case of doubt, porosity is understood to mean the average porosity, which is the ratio of the cavity volume to the total volume of the relevant holding element or the relevant sacrificial layer. Furthermore, the adhesion can be reduced by a modification, in particular oxidation, which does not produce porosity, but rather changes the lattice structure of the semiconductor material, for example from a crystalline semiconductor material to an amorphous, polycrystalline or glassy material.

[0017] It is also possible to modify the holding element or the material of the holding element by chemical, mechanical or crystallographic changes. In other words, the modification of the holding element can be a crystallographic and / or chemical modification, which can be produced, for example, by temperature changes, pressure changes, the use of solvents and / or by other chemical or mechanical influences.

[0018] In at least one embodiment of the method for manufacturing a plurality of components, the components each have a semiconductor body having an active region, a semiconductor structure being provided on an intermediate carrier, wherein a sacrificial layer is arranged in the vertical direction between the semiconductor structure and the intermediate carrier. A plurality of separation trenches are formed through the semiconductor structure to form a plurality of laterally spaced semiconductor bodies. The sacrificial layer in particular forms a retaining element. In order to reduce the mechanical adhesion between the semiconductor body and the intermediate carrier, the retaining element is modified, in particular oxidized, so that the semiconductor body is configured to be detachable from the intermediate carrier. For example, the retaining element is capable of releasing the semiconductor body from the intermediate carrier under mechanical load. It is also feasible to detach the semiconductor body from the intermediate carrier by irradiating or etching the retaining element.

[0019] According to at least one embodiment of the method, after forming the separation trenches, the sacrificial layer is partially removed so that a cavity is formed in the vertical direction between the intermediate carrier and the semiconductor body, wherein the remaining subregion of the sacrificial layer forms the holding element. In a plan view of the intermediate carrier, the semiconductor body can overlap both the holding element and the cavity.

[0020] According to at least one embodiment of the method, after modification, for example after oxidation, the holding element is mechanically connected to the intermediate carrier only via the modified, in particular oxidized, holding element, wherein the component can be detached from the intermediate carrier and thus is designed to be transferable. The semiconductor body can be detached from the intermediate carrier under mechanical load by irradiating or etching the holding element.

[0021] According to at least one embodiment of the method, the semiconductor bodies are removed from the intermediate carrier individually or in groups, in particular by means of one or more dies. Under the mechanical load of the one or more dies, the holding element releases the semiconductor body from the intermediate carrier. In this case, the holding element can be mechanically broken or detached from the intermediate carrier or from the semiconductor body. It is possible that residues or remaining parts of the holding element remain on the one or more semiconductor bodies. Before being detached from the one or more dies, the semiconductor body can be fixed on the one or more carriers.

[0022] According to at least one embodiment of the method, the semiconductor bodies are removed from the intermediate carrier individually or in groups. In order to release the semiconductor bodies from the intermediate carrier, an absorber layer can be irradiated, wherein the absorber layer is in particular part of the holding element. For example, the absorber layer is embedded centrally in the holding element. Alternatively, the absorber layer can be arranged toward the intermediate carrier or toward the semiconductor bodies. The absorber layer can be an outer layer of the holding element, which delimits the holding element in the vertical direction.

[0023] The absorption layer can be decomposed by irradiation, whereby the semiconductor body is detached from the intermediate carrier. For example, the absorption layer is irradiated with laser or UV light. In particular, the absorption layer, in particular the material of the absorption layer, has a band gap that is smaller than the photon energy of the absorbed light. The band gap of the absorption layer can be smaller than the band gap of the intermediate carrier.

[0024] The absorber layer can be an outer layer of the holding element facing the intermediate carrier. The absorber layer can also be an outer layer of the holding element facing the semiconductor body. It is also possible that the absorber layer is an inner layer of the holding element. The absorber layer can be completely embedded in the corresponding holding element.

[0025] According to at least one embodiment of the method, the intermediate carrier is a growth substrate, wherein the sacrificial layer is a semiconductor layer applied epitaxially on the intermediate carrier. The growth substrate can be formed from a semiconductor material. The semiconductor structure is in particular a semiconductor layer sequence composed of semiconductor layers applied on the sacrificial layer.

[0026] According to at least one embodiment of the method, the semiconductor structure is a layer sequence applied epitaxially on a growth substrate, wherein the semiconductor structure and the sacrificial layer are arranged in a vertical direction between the growth substrate and the intermediate carrier. The sacrificial layer can be a semiconductor layer applied epitaxially on the semiconductor structure. Alternatively, it is possible that the sacrificial layer is a fixing layer, in particular different from the semiconductor layer. The growth substrate can be removed in a subsequent method step, in particular after the semiconductor structure has been fixed on the intermediate carrier. The intermediate carrier is in particular different from the growth substrate and can be formed from a material different from the semiconductor material.

[0027] A component assembly consisting of a plurality of components and a common intermediate carrier is proposed, wherein a sacrificial layer is arranged in the vertical direction between the common intermediate carrier and the semiconductor body of the component. In particular, the sacrificial layer has a plurality of laterally spaced sub-regions, which form holding elements between the intermediate carrier and the semiconductor body. The above method is particularly suitable for producing the component assembly described here. Therefore, the features described in conjunction with the component and the component assembly can also be used for the method, and vice versa.

[0028] In at least one embodiment of the component composite, the component composite comprises a plurality of components, a modified, in particular oxidized sacrificial layer and a common intermediate carrier. The components each have a semiconductor body having an active region, wherein the semiconductor bodies are arranged on the intermediate carrier and are laterally spaced apart from each other by separation trenches. The sacrificial layer is arranged between the intermediate carrier and the semiconductor body in the vertical direction, wherein the sacrificial layer has a plurality of modified, in particular oxidized retaining elements between the semiconductor body and the common intermediate carrier. Preferably, the semiconductor body is mechanically connected to the intermediate carrier only via the retaining element. The retaining element is surrounded by the cavity in the lateral direction. For example, in a top view of the intermediate carrier, the semiconductor body overlaps not only with the retaining element but also with the cavity. The semiconductor body is configured to be detachable from the intermediate carrier, wherein the retaining element releases the semiconductor body from the intermediate carrier, in particular under mechanical load or by irradiation or by etching.

[0029] Before the components can be removed from the intermediate carrier individually or in groups in a targeted and safe manner for further processing steps, the components are arranged and held sufficiently stably on the intermediate carrier by means of a holding element. The components can thus be transferred individually or in groups and thus be designed to be printable. The components or the semiconductor bodies of the components can thus be removed individually or in groups, for example by breaking and / or by detaching the holding element from the intermediate carrier. In the same production process, for example in the same so-called "pick and place" process, the semiconductor bodies can be transferred to the target mounting surface, for example by means of one or more dies, and mechanically fixed thereto and / or electrically contacted.

[0030] The target mounting surface can be a printed circuit board or a carrier of an electronic device. Such components can be used as light sources in general lighting devices or in the headlights of motor vehicles. It is also conceivable that these components are used in electronic devices, mobile phones, touch panels, laser printers, cameras, recognition cameras, facial recognition cameras, displays or systems composed of LEDs, sensors, laser diodes and / or detectors.

[0031] According to at least one embodiment of the method or the component assembly, the holding element is arranged only below the semiconductor body. In a top view of the intermediate carrier, the semiconductor body can completely cover the holding element. Each of the holding elements can be associated with a single semiconductor body in a one-to-one correspondence, and vice versa. It is also possible that a plurality of holding elements are associated with the same semiconductor body and are completely covered by it in a top view. When transferring a single semiconductor body, adjacent semiconductor bodies can remain out of contact with the process, so that the transfer process can be carried out particularly precisely.

[0032] According to at least one embodiment of the method or the component assembly, at least one of the holding elements is arranged in the separation trench both below and beside the semiconductor body. The holding element can be associated with a plurality of semiconductor bodies at the same time and can thus be covered by a plurality of semiconductor bodies at the same time. It is possible that a plurality of such holding elements are associated with the same semiconductor body. In this case, the semiconductor body can partially cover a plurality of holding elements in a top view. Adjacent semiconductor bodies can share a common holding element or a plurality of common holding elements.

[0033] According to at least one embodiment of the method or the component assembly, the retaining element is designed to be breakable or detachable when the component is removed under mechanical load. In other words, the retaining element is designed so that it breaks or tears apart when the associated component or the associated semiconductor body is removed. In particular, the mechanical breakage occurs within a layer of the same material. If the retaining element is designed to be detachable, the detachment of the retaining element occurs in particular at the interface between two layers of different materials, for example at the interface between a sacrificial layer or two sublayers of the retaining element, or at the interface between the retaining element and the component or at the interface between the retaining element and the intermediate carrier.

[0034] According to at least one embodiment of the method or the component assembly, the sacrificial layer is a semiconductor layer containing aluminum. The modification, in particular the oxidation, of such a semiconductor layer can be carried out in a particularly simple manner.

[0035] According to at least one embodiment of the method or the component assembly, the semiconductor body is based on GaAs or GaP, wherein the sacrificial layer is a GaAs or GaP layer containing aluminum. The sacrificial layer can be an AlGaAs layer or an AlGaP layer. The semiconductor body can have a semiconductor layer containing indium.

[0036] According to at least one embodiment of the method or the component composite, the sacrificial layer has a plurality of sublayers, for example at least two sublayers, wherein the sublayers have different modification rates. It is possible that the sublayers are based on the same material system, wherein the sublayers have different concentrations of aluminum or different doping.

[0037] According to at least one embodiment of the method or the component composite, the sacrificial layer has a first sublayer and a second sublayer arranged between the first sublayer and the semiconductor body. The corresponding holding element can therefore also have a first sublayer and a second sublayer. The first sublayer and the second sublayer can have different material compositions and / or different aluminum contents.

[0038] Preferably, the first sublayer has a lower modification rate or oxidation rate than the second sublayer. During modification, the second sublayer can be completely modified, while the first sublayer is modified only in its outer region. For example, during oxidation, the second sublayer can be completely oxidized, while the first sublayer is oxidized only in its outer region. The retaining element is therefore configured to be breakable or detachable, especially in the region of the second sublayer. More precisely, after the component or semiconductor body is separated from the intermediate carrier, the first sublayer remains on the intermediate carrier, so that the separated semiconductor body does not have the first sublayer, especially no residue of the first sublayer. By using at least two sublayers with different modification rates, especially oxidation rates, it is possible to form a desired fracture site in a predetermined region of the retaining element or sacrificial layer in a targeted manner. Depending on the application, it is also conceivable that the second sublayer has a lower modification rate than the first sublayer, for example a lower oxidation rate.

[0039] According to at least one embodiment of the method or the component composite, the first sublayer and the second sublayer are based on the same material system, wherein the first sublayer has a lower concentration of aluminum than the second sublayer, or vice versa. It is also possible that one sublayer contains aluminum and the other sublayer does not contain aluminum. It is also possible that the different modification rates or oxidation rates are produced by different doping, for example by different degrees of P-type doping or N-type doping, or by P-type doping and N-type doping.

[0040] In accordance with at least one embodiment of the method or the component assembly, a contact layer and a further contact layer are associated with each semiconductor body, wherein the contact layer and the further contact layer are provided for electrically contacting the associated semiconductor body.

[0041] The contact layer can be arranged on the first main surface of the semiconductor body next to the holding element and partially covers the first main surface. For example, the contact layer is set up to electrically contact the first semiconductor layer of the semiconductor body. Another contact layer can be arranged on the second main surface of the semiconductor body facing away from the first main surface and completely covers the second main surface. Another contact layer can be set up to electrically contact the second semiconductor layer of the semiconductor body. The first semiconductor layer and the second semiconductor layer can be configured as n-type conduction or p-type conduction, or vice versa.

[0042] According to at least one embodiment of the method or the component assembly, the contact layer and / or the further contact layer is formed by a transparent conductive oxide (TCO), for example by indium tin oxide (ITO). The contact layer and the further contact layer are arranged in particular on opposite sides of the semiconductor body. For example, the main surface of the semiconductor body or the component facing away from the holding element is formed as a radiation passage surface. The main surface can be covered by the transparent conductive contact layer, in particular completely covered.

[0043] According to at least one embodiment of the method or the component assembly, each semiconductor body is associated with a contact layer and a further contact layer, wherein the contact layer and the further contact layer are arranged on the same side of the associated semiconductor body and are designed to electrically contact the semiconductor body. In particular, one of the contact layers is electrically conductively connected to a via, wherein the via extends in a vertical direction through the active region to electrically contact the semiconductor layer of the semiconductor body.

[0044] The contact layer and the further contact layer are in particular arranged on the back side of the semiconductor body or component. The component can be configured as a surface-mountable component. The front side of the semiconductor body or component facing away from the back side can be configured as a radiation passage surface. It is possible that the radiation passage surface can be covered with a protective layer, in particular completely covered. The protective layer can be configured to be electrically insulating. However, it is possible that the protective layer can be formed from a transparent conductive material and in this case additionally serve as a current spreading layer for the semiconductor layer.

[0045] A component is provided, which is produced, in particular, according to the method described herein. In particular, the component comprises a semiconductor body which is detached from an intermediate carrier of a component assembly. The component may comprise remnants or residual parts of one or more retaining elements. Features described in conjunction with the method and the component assembly may be used for the component, and vice versa.

[0046] In at least one embodiment of the component, the component comprises a semiconductor body, which is in particular separated from the component assembly described here. The active region is designed to generate or detect electromagnetic radiation. The semiconductor body has a main surface, which is partially covered by the residue or remaining part of the holding element. The residue or remaining part of the holding element is in particular formed by a modified, in particular oxidized material and has a reflective or scattering effect on the electromagnetic radiation to be emitted or detected during operation of the component.

[0047] According to at least one embodiment of the component, the component comprises a carrier and a connecting layer, wherein the semiconductor body is fixed to the carrier by the connecting layer. In particular, the residue or remaining part of the holding element is at least partially embedded in the connecting layer. The connecting layer can be an adhesion promoter layer, for example an adhesive layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0048] Further preferred embodiments and developments of the component, component assembly and method are described below in conjunction with Figures 1A to 5C The following are the results of the described embodiments.

[0049] Figure 1A , 1B , 1C, 1D, 1E, 1F, 1G and 1H are schematic diagrams showing a process sequence for manufacturing a component composite or a component,

[0050] Figure 2A , 2B 2C and 2D show schematic diagrams of different embodiments of component composites, and

[0051] Figure 3A , 3B , 3C, 4A, 4B, 4C, 5A, 5B and 5C show schematic diagrams of different method steps of further exemplary embodiments of a method for producing a component assembly or a component.

[0052] Identical, similar or identically acting elements are provided with the same reference numerals in the figures. The figures are schematic diagrams and are therefore not necessarily drawn to scale. Rather, relatively small elements and in particular layer thicknesses may be shown exaggeratedly for the sake of clarity. DETAILED DESCRIPTION

[0053] exist Figure 1A Schematically, method steps for producing a component composite 100 or for producing a plurality of components 10 are shown in FIG.

[0054] according to Figure 1A , a semiconductor structure 20 is provided on an intermediate carrier 90, in particular on a growth substrate 9. In particular, the intermediate carrier 90 is a III-V or II-VI semiconductor substrate. For example, the intermediate carrier consists of gallium arsenide or is based on gallium arsenide. The semiconductor structure 20 has a first semiconductor layer 21, a second semiconductor layer 22 and an active region 23 arranged between the semiconductor layers 21 and 22. The active region 23 is in particular designed to emit or detect electromagnetic radiation.

[0055] The semiconductor structure 20 can be based on a III-V or III-VI semiconductor compound material. For example, the semiconductor structure 20 is based on gallium nitride. The first semiconductor layer 21 is particularly arranged on the n-type side. For example, the first semiconductor layer 21 is configured as n-type conduction or n-type doping. The second semiconductor layer 22 is particularly arranged on the p-type side and can be configured as p-type conduction or p-type doping. The active area 23 is particularly a pn junction area. In contrast, it is feasible that the first semiconductor layer 21 is configured as p-type conduction or p-type doping and the second semiconductor layer 22 is configured as n-type conduction or n-type doping.

[0056] according to Figure 1A The sacrificial layer 4 is arranged in the vertical direction between the semiconductor structure 20 and the intermediate carrier 90. The sacrificial layer 4 serves in particular as a buffer layer and can be a semiconductor layer applied epitaxially on the growth substrate 9. For example, the sacrificial layer 4 is an aluminum-containing GaAs or GaP layer.

[0057] The sacrificial layer 4 in particular adjoins a main surface 2R of the semiconductor structure 20, wherein the main surface 2R is the back side of the semiconductor structure 20 facing the intermediate carrier 90 and can be formed by the surface of the first semiconductor layer 21. The semiconductor structure 20 has a further main surface 2V facing away from the back side, which faces away from the intermediate carrier 90 and can be formed by the surface of the second semiconductor layer 22. The further main surface 2V forms the front side 2V of the semiconductor structure 20.

[0058] The contact layer 62 is arranged on the front side 2V of the semiconductor structure 20. The contact layer 62 is part of the contact structure 6 and is particularly provided for electrically contacting the second semiconductor layer 22. For example, the contact layer 62 is formed by a transparent conductive material. The component composite 100 has a front side 10V, which is particularly formed by the exposed surface of the contact layer 62. The components 10 produced from the component composite 100 can each have a front side 10V, which is particularly formed as a radiation passage surface, for example, as a radiation entrance surface or a radiation exit surface.

[0059] according to Figure 1B , the semiconductor structure 20 is divided into a plurality of semiconductor bodies 2. Here, a plurality of separation trenches 4T can be produced along the vertical direction through the contact layer 62 and the semiconductor structure 20. For this purpose, a mask 7 formed of a photostructurable material, for example, can be used. By appropriately exposing the photostructurable material, an opening of the mask 7 can be formed, which exposes the position of the separation trench 4T. In order to form the separation trench 4T, the material of the semiconductor structure 20 and / or the contact layer 62 is locally stripped, for example by means of an etching process, such as a plasma etching process. When the separation trench 4T is produced, the sacrificial layer 4 can be exposed or at least partially or completely removed in the region of the separation trench 4T.

[0060] exist Figure 1BThe separation trenches 4T shown in each case have a cross section that decreases as the distance from the intermediate carrier 90 decreases. The divided semiconductor body 2 therefore has a side surface 2S formed obliquely to the main surfaces 2V and 2R. The semiconductor body 2 can form the body of a light-emitting diode (LED). The LED is, for example, a μLED. The component 10 or the semiconductor body has a lateral extension, which is, for example, between 1 μm and 30 μm, including boundary values. The lateral extension can also be between 1 μm and 5 mm, including boundary values, for example, between 10 μm and 5 mm, including boundary values, between 300 μm and 5 mm, including boundary values, between 300 μm and 3 mm, including boundary values, or between 100 μm and 1 mm, including boundary values.

[0061] Although the singulated semiconductor bodies 2 are spatially spaced apart from one another in a lateral direction, they continue to be mechanically connected to the intermediate carrier 9 via the sacrificial layer 4, in particular via a structured sacrificial layer 4. After singulation, the semiconductor bodies 2 are mechanically connected to the intermediate carrier 90, in particular only via the sacrificial layer 4.

[0062] After singulation, the semiconductor body 2 has a rear main surface 2R, which can continue to be completely covered by the sacrificial layer 4. In a subsequent method step, a cavity 4H can be formed between the semiconductor body 2 and the intermediate carrier 90, for example by means of an etching method, for example by means of a wet-chemical etching method. In this case, the sacrificial layer 4 can be removed in places, so that Figure 1B The rear main surface 2R forming the rear side 10R of the component 10 is only partially covered by the sacrificial layer 4. The semiconductor body 2 is thus partially detached from the intermediate carrier 90. The remaining regions of the sacrificial layer 4 form a plurality of holding elements 3 which effect a mechanical connection between the semiconductor body 2 and the intermediate carrier 90.

[0063] and Figure 1B Alternatively, it is possible for the cavity 4H to be formed only by the separating trenches 4T. In this case, the holding elements 3 can each completely cover the rear main surface 2R of the associated semiconductor body 2 or, except for manufacturing tolerances, completely cover the rear main surface.

[0064] The holding element 3 can be designed in the form of a holding column which, in a plan view onto the intermediate carrier 90, is completely covered by the semiconductor body ( Figure 1B ). It is possible that each semiconductor body 2 can have a single holding element 3 or a plurality of holding elements 3. The separation trench 4T can be free of holding elements 3 or of material of the sacrificial layer 4. Alternatively, it is possible that the holding element 3 can be located locally below the semiconductor body 2 and locally in the separation trench ( Figure 2B , 2C and 2D).

[0065] according to Figure 1C , the holding element 3 is modified, in particular oxidized. The adhesion between the semiconductor body 2 and the intermediate carrier 90 is reduced by the modification. This is in particular due to a deterioration in the material quality, for example due to a deterioration in the crystal quality of the holding element 3. In particular, pores are formed in the holding element 3 by the modification. The holding element 3 thus becomes more porous and is more likely to mechanically break or detach from the semiconductor body 2 or the intermediate carrier 90.

[0066] according to Figure 1D , forming a further contact layer 61, which is part of the contact structure 6 and is in particular provided for electrically contacting the first semiconductor layer 21. In particular, completely similar to the contact layer 62, the further contact layer 61 can be applied to the semiconductor body 2 by means of a deposition method. In a top view, the further contact layer 61 can completely cover the mask 7, the semiconductor body 2, the side surface 2S of the semiconductor body 2 and the exposed surface of the intermediate carrier 90. The semiconductor body 2 can be temporarily electrically short-circuited. In particular, the further contact layer 61 adjoins the first semiconductor layer 21 and forms an electrical contact with the first semiconductor layer 21. The back side 2R of the respective semiconductor body 2 is partially covered by the further contact layer 61 and partially covered by one or more holding elements 3. In particular, the holding element 3 can be surrounded by the further contact layer 61 in the lateral direction. The holding element 3 can be laterally spaced apart from the further contact layer 61.

[0067] according to Figure 1E , the mask 7 is removed. The further contact layer 61 is removed on the side surface 2S. The temporary electrical short circuit is thereby eliminated. The semiconductor body 2 can be electrically contacted from the outside via the contact layer 62 and the further contact layer 61 .

[0068] exist Figure 1F Schematically shown in FIG: Individual components 10 or individual semiconductor bodies 2 can be selectively separated from the intermediate carrier 90, for example, by means of adhesive stamps 7S. However, the components 10 or semiconductor bodies 2 can be separated from the intermediate carrier 9 individually or in groups by means of one or more stamps 7S and applied to the target surface in the same method step and mechanically fixed there and electrically contacted. In this case, the semiconductor bodies 2 are selectively removed by local mechanical breaking or by detaching the holding element 3 from the intermediate carrier 90.

[0069] according to Figure 1G, the separated semiconductor body 2 can be mechanically fixed on the carrier 1 by means of a connecting layer 8, for example. The residue 3R or remaining part 3R of the holding element 3 can be at least partially embedded in the connecting layer 8. The carrier 1 can have a connecting layer 11, which is electrically conductively connected to the contact layer 61. The contact layer 61 and the connecting layer 11 can be surrounded by a connecting layer 81. The connecting layer 81 can be an adhesion promoter layer, for example an adhesive layer. It is also possible that the connecting layer 81 is a solder layer or a conductive adhesive layer.

[0070] The carrier 1 has a further connection layer 12. Figure 1H After the die 7S is removed, an electrical connection 13, for example in the form of a bonding wire or a planar contact, can be formed between the connection layer 12 and the contact layer 62. The connection layers 11 and 12 can be formed as conductor tracks on the connection surface or carrier 1. The carrier 1 with the connection layers 11 and 12 can be a printed circuit board or a Si-based board.

[0071] according to Figure 1H , the component 10 thus comprises a semiconductor body 2 on a carrier 1, wherein the semiconductor body 2 is mechanically fixed to the carrier 1 by means of a connecting layer 8. The front side 10V of the component 10 is formed by the exposed surface of the contact layer 62. The rear side 10R of the component 10 is formed by the exposed surface of the carrier 1. The contact layer 61 and the residue 3R of the holding element only partially cover the rear main surface 2R of the semiconductor body 2. Figure 1H Alternatively, it is possible for a plurality of such semiconductor bodies 2 to be arranged on the carrier 1 .

[0072] The semiconductor body 2 has a side surface 2S which forms an acute angle with the main surface 2R on the rear side, the acute angle being, for example, between 20° and 80°, for example, between 30° and 70°, including limit values, or between 30° and 60°. Correspondingly, the side surface 2S forms an obtuse angle with the main surface 2V on the front side, the obtuse angle being, for example, between 110° and 170°, for example, between 120° and 160°, including limit values, or between 120° and 150°. In contrast, it is possible that the side surface 2S forms a right angle or a substantially right angle with the main surfaces 2V and 2R.

[0073] exist Figure 2A The cross-sectional view and the top view are shown in Figure 1E A portion of the embodiment shown in FIG. Figure 2A , the holding element 3 is arranged centrally below the semiconductor body 2. In particular, each semiconductor body 2 is associated with a single holding element and vice versa. In a top view of the intermediate carrier 90, the semiconductor body 2 completely covers the holding element 3 associated therewith.

[0074] exist Figure 2B , 2CFurther exemplary arrangements of the holding elements 3 are schematically shown in 2D. Furthermore, these figures show an introduction channel 4K which is provided in particular for introducing an etching agent in order to produce the cavity 4H.

[0075] Figure 2B , 2C 2D, a plurality of semiconductor bodies 2 or a plurality of components 10 share a common holding element 3. The common holding element 3 is located partially in the separation trenches 4T and partially below the semiconductor bodies 2 of the components 10. In this case, the common holding element can laterally bridge one or more separation trenches 4T.

[0076] according to Figure 2B , four adjacent semiconductor bodies 2 or components 10 share a common holding element 3 which is located in the corner regions of the semiconductor bodies 2 or components 10 and at the intersections of the separation trenches 4T. The common holding element 3 only partially covers the separation trenches 4T.

[0077] according to Figure 2C , semiconductor bodies 2 or components 10 of two adjacent rows share a common holding element 3, which extends along a separation trench 4T between the semiconductor bodies 2 of two adjacent rows and can completely cover the separation trench 4T in a top view. Further separation trenches between the semiconductor bodies 2 can be partially covered by the common holding element. Figure 2C In the embodiment shown in FIG. 4 , the introduction channel 4K is located in the separation trench 4T and extends along a row of semiconductor bodies 2 or components 10 .

[0078] exist Figure 2D The embodiment shown in substantially corresponds to the embodiment shown in Figure 2B The embodiment shown in FIG. Figure 2B The introduction channel in the Figure 2D The introduction channels in are located in the intersections of the separating trenches 4T. Two or four adjacent components 10 can share a common holding element 3. The common holding element 3 is located in particular in the intersections of the separating trenches 4T.

[0079] exist Figure 3A The embodiment shown in substantially corresponds to the embodiment shown in Figure 1A 100 or a plurality of components 10. In contrast, the sacrificial layer 4 has a first sublayer 41 and a second sublayer 42. The second sublayer 42 is located between the first sublayer 41 and the semiconductor structure 20 in the vertical direction. In particular, the sublayers 41 and 42 are formed of different materials or have different material compositions, so that the sublayers 41 and 42 have different modification rates, in particular different oxidation rates. For example, the sublayers 41 and 42 have different concentrations of aluminum.

[0080] exist Figure 3B The embodiment shown in substantially corresponds to the embodiment shown in Figure 1B The embodiment shown in , differs in that the retaining element 3 has a first partial layer 41 and a second partial layer 42 respectively.

[0081] exist Figure 3C The embodiment shown in substantially corresponds to the embodiment shown in Figure 1E 1 and 2. An embodiment of a method step for producing a component assembly 100 or a plurality of components 10 is shown in FIG. 1. The difference is that the holding element 3 has a first sublayer 41, which is only partially modified or oxidized. The holding element 3 has a second sublayer 42, which is in particular completely modified or completely oxidized. In this case, the break position is expected to be located in the second sublayer 42 or at the interface between the second sublayer 42 and the semiconductor body 2 or at the interface between the second sublayer 42 and the first sublayer 41.

[0082] exist Figure 4A The embodiment shown in substantially corresponds to the embodiment shown in Figure 1A 100 or a plurality of components 10. The difference is that the semiconductor structure 20 is located between the growth substrate 9 and the sacrificial layer 4 in the vertical direction. The sacrificial layer 4 can be a semiconductor layer applied epitaxially on the semiconductor structure 20. It is also possible that the sacrificial layer 4 is different from the semiconductor layer. For example, the sacrificial layer 4 can be an adhesion promoter layer between the semiconductor structure 20 and the intermediate carrier 90, for example Figure 4B As shown in .

[0083] according to Figure 4C , the growth substrate 9 is removed from the semiconductor structure 20. Figures 1A to 1H The method steps provide further subsequent method steps for producing the component composite 100 or a plurality of components 10 .

[0084] exist Figure 5A , 5B The embodiment shown in 5C substantially corresponds to the embodiment shown in Figure 4A , 4B 4C shows an exemplary embodiment of several method steps for producing a component composite 100 or a plurality of components 10. The difference is that a contact structure 6 is formed on the semiconductor structure 20 before the sacrificial layer 4 is formed.

[0085] The contact structure 6 includes in particular a contact layer 62 for electrically contacting the semiconductor layer 22. In addition, the contact structure 6 includes a plurality of vias 60, which extend through the semiconductor layer 22 and the active region 23 into the semiconductor layer 21. The contact structure 6 also has a plurality of contact layers 61, each of which is electrically conductively connected to one or more vias 60. The contact layer 61 and the vias 60 are provided for electrically contacting the semiconductor layer 21.

[0086] The insulating structure 5 ensures that the contact layer 61 and the via 60 are electrically insulated from the active area 23, the semiconductor layer 22 and the further contact layer 62, and the insulating structure 5 is located locally in and on the semiconductor structure 20. In particular, the contact layer 61, the further contact layer 62 and the insulating layer 5 are located at least locally on the same side of the semiconductor structure.

[0087] Able to Figure 1B , 1C The method steps of 1 and 1G provide further subsequent method steps for producing the component composite 100 or the plurality of components 10. Figure 1C , Figure 1G and Figure 1H Compared with the embodiment shown in Figures 5A to 5C The produced component 10 or component assembly 100 has a contact structure 6 which is accessible, in particular, only at the rear side 2R of the semiconductor body 2 .

[0088] By means of the method described here, many intermediate steps can be dispensed with, for example intermediate steps for fixing, electrical contacting or temporary storage of the semiconductor body. In addition, the semiconductor body can be applied directly to a mounting surface of a carrier, in particular a printed circuit board, so that no further intermediate carrier is required between the carrier and the semiconductor body. This can reduce internal mechanical stresses. The semiconductor body can also be designed to be smaller and thinner, because, for example, masks and sacrificial layers can be adjusted accordingly in a simplified manner. The coupling-out of radiation via the side surfaces of the semiconductor body can also be increased. In addition, there is the possibility that the growth substrate can be reused.

[0089] This patent application claims the priority of German patent application DE102019108701.5, the disclosure content of which is incorporated herein by reference.

[0090] The present invention is not limited to these embodiments due to the description of the present invention based on the embodiments. Rather, the present invention includes any new features and any combination of features, which in particular includes any combination of features in the claims, even if the feature or the combination itself is not explicitly given in the claims or embodiments.

[0091] Reference numerals list

[0092] 100 component composite parts

[0093] 10 components

[0094] 10R component back side

[0095] 10V component front side / radiation through surface

[0096] 1 Carrier

[0097] 11 Connection Layer

[0098] 12 Connection Layer

[0099] 13 Electrical connection

[0100] 2 Semiconductor body

[0101] 20Semiconductor structure

[0102] 21First semiconductor layer

[0103] 22 Second semiconductor layer

[0104] 23 Active Area

[0105] First main surface of 2R semiconductor body

[0106] Side view of 2S semiconductor body

[0107] Second main surface of 2V semiconductor body

[0108] 3. Holding element

[0109] 3R Retention Components

[0110] 4 Sacrificial layer

[0111] 41 The first sublayer of the sacrificial layer

[0112] 42 The second sublayer of the sacrificial layer

[0113] 4K Incoming Channel

[0114] 4T separation trench

[0115] 4H Cavity

[0116] 5Insulation structure

[0117] 6Contact structure

[0118] 61 contact layer

[0119] 60 vias

[0120] 62 contact layer

[0121] 7 Mask

[0122] 7S die

[0123] 8 connection layers

[0124] 9 Growth substrate

[0125] 90 intermediate carrier

Claims

1. A method for producing a plurality of components (10), each of which comprises a semiconductor body (2) having an optically active region (23), the method comprising the following steps: - providing a semiconductor structure (20) on an intermediate carrier (90), wherein a sacrificial layer (4) is arranged between the semiconductor structure and the intermediate carrier in a vertical direction; - forming a plurality of separation trenches (4T) through the semiconductor structure to form a plurality of laterally spaced apart semiconductor bodies, wherein the sacrificial layer forms a holding element (3), by removing the sacrificial layer after forming the separation trenches (4T) so that a cavity (4H) is formed in the vertical direction between the intermediate carrier (90) and the semiconductor body (2), wherein a remaining sub-region of the sacrificial layer forms the holding element (3); and - modifying the holding element in order to reduce the mechanical adhesion between the semiconductor body and the intermediate carrier, so that the semiconductor body is designed to be detachable from the intermediate carrier, In this case, in a plan view of the intermediate carrier, the semiconductor body overlaps both the holding element and the cavity.

2. The method according to claim 1, The sacrificial layer (4) and the semiconductor structure (20) are based on the same semiconductor material system.

3. The method according to claim 1 or 2, The modification is carried out by oxidation, chemical change, mechanical change or crystallographic change of the retaining element (3).

4. The method according to claim 1 or 2, in, After the modification of the holding element (3), the semiconductor body (2) is mechanically connected to the intermediate carrier (90) only via the modified holding element, wherein the component is designed to be detachable from the intermediate carrier and thus to be transferable, and The semiconductor body is detached from the intermediate carrier under mechanical load by irradiating or etching the holding element.

5. The method according to claim 1 or 2, The semiconductor bodies (2) are removed from the intermediate carrier (90) individually or in groups by means of one or more dies, wherein - the holding element (3) releases the semiconductor body from the intermediate carrier under the mechanical load of the one or more dies, and The semiconductor body is fixed to a carrier (1) or to a plurality of carriers (1) before being removed by the one or more dies.

6. The method according to claim 1 or 2, in - removing the semiconductor bodies (2) individually or in groups from the intermediate carrier (90), and - in order to detach the semiconductor body from the intermediate carrier, irradiating an absorber layer, wherein the absorber layer is part of the holding element (3), and - embedded centrally in the retaining element (3), or - arranged towards the intermediate carrier (90) or towards the semiconductor body.

7. The method according to claim 1 or 2, The intermediate carrier (90) is a growth substrate and the sacrificial layer (4) is a semiconductor layer applied epitaxially on the intermediate carrier.

8. The method according to claim 1 or 2, The semiconductor structure (20) is a layer sequence applied epitaxially on a growth substrate (9), the semiconductor structure and the sacrificial layer (4) are arranged in a vertical direction between the growth substrate and the intermediate carrier (90), and the growth substrate is removed after the semiconductor structure is fixed to the intermediate carrier.

9. A component composite (100) consisting of a plurality of components (10), a modified sacrificial layer (4) and a common intermediate carrier (90), wherein the components each have a semiconductor body (2) having an active region (23), wherein the semiconductor bodies are arranged on the intermediate carrier and are laterally spaced apart from one another by separating trenches (4T), the sacrificial layer is arranged in the vertical direction between the intermediate carrier and the semiconductor body, wherein the intermediate carrier (90) is a growth substrate on which a semiconductor structure (20) is epitaxially grown, wherein separation trenches (4T) are formed through the semiconductor structure (20) to form semiconductor bodies (2) that are laterally spaced apart from one another, wherein the sacrificial layer has a plurality of holding elements (3) between the semiconductor bodies and the common intermediate carrier, and wherein the semiconductor bodies are mechanically connected to the intermediate carrier only via the holding elements, - the retaining element is surrounded in transverse direction by a cavity (4H), and The semiconductor body is designed to be detachable from the intermediate carrier, wherein the holding element releases the semiconductor body from the intermediate carrier under mechanical load or by irradiation or by etching.

10. The component composite (100) according to claim 9, The holding element (3) is arranged only below the semiconductor body (2) and the semiconductor body completely covers the holding element in a plan view of the intermediate carrier (90).

11. The component composite (100) according to claim 9, At least one of the holding elements (3) is arranged in a separating trench (4T) both below and beside the semiconductor body (2), wherein the at least one holding element is simultaneously associated with a plurality of semiconductor bodies and is thus simultaneously covered by a plurality of semiconductor bodies.

12. The component composite (100) according to any one of claims 9 to 11, The retaining element (3) is designed to break or detach when the component (10) is removed under mechanical load.

13. The component composite (100) according to any one of claims 9 to 11, The semiconductor body (2) is based on GaAs or GaP and the sacrificial layer (4) is an aluminum-containing GaAs or GaP layer.

14. The component composite (100) according to any one of claims 9 to 11, The sacrificial layer (4) comprises a plurality of sub-layers (41, 42), wherein the sub-layers have different modification rates.

15. The component composite (100) according to claim 14, The sublayers (41, 42) are based on the same material system, wherein The sub-layers have different concentrations of aluminum or different doping.

16. The component composite (100) according to any one of claims 9 to 11, A contact layer (61) and a further contact layer (62) are associated with each semiconductor body (2), wherein the contact layer and the further contact layer are designed to make electrical contact with the associated semiconductor body, The contact layer is arranged next to the holding element (3) on the first main surface (2R) of the semiconductor body and partially covers the first main surface, and The further contact layer is arranged on a second main area (2V) of the semiconductor body remote from the first main area and completely covers the second main area.

17. The component composite (100) according to claim 16, The contact layer (61) and / or the further contact layer (62) are formed of a transparent conductive oxide.

18. The component composite (100) according to any one of claims 9 to 11, A contact layer (61) and a further contact layer (62) are associated with each semiconductor body (2), wherein the contact layer and the further contact layer are arranged on the same side of the associated semiconductor body and are designed for electrically contacting the semiconductor body, - one of the contact layers is electrically conductively connected to the via (60), and The via extends through the active area (23) in a vertical direction to electrically contact the semiconductor layer (21) of the semiconductor body.

19. A component (10) comprising a semiconductor body (2) which has been detached from a component assembly (100) according to any one of claims 9 to 18, wherein - an active region (23) designed to generate or detect electromagnetic radiation, The semiconductor body (2) has a main surface (2R) which is covered in places by residues of the holding element (3), and The residues of the holding element are formed from the modified material and have a reflective or scattering effect on electromagnetic radiation to be emitted or detected during operation of the component.

20. The component (10) according to claim 19, The component comprises a carrier (1) and a connecting layer (8), wherein the semiconductor body (2) is fixed to the carrier by the connecting layer and residues of the holding element (3) are at least partially embedded in the connecting layer.

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