Wave frequency energy emitting device

Abstract

The present application relates to a kind of wave frequency energy emission devices, the device includes: electromagnetic modulation layer, for modulating preset frequency and power electric signal pulse, and change magnetic field is generated according to the electric signal pulse;Energy conversion layer is arranged in the magnetic field range of the change magnetic field, and the energy conversion layer is used to convert the magnetic field energy of the change magnetic field into vibration energy wave;The energy conversion layer is composed of one or two kinds of strain materials, and the expansion rate and response time of each strain material are different;The vibration energy wave is used to cause the resonance inside target object, to change the state of the target object.The present application utilizes the characteristics that the energy conversion layer generates expansion with the change of electromagnetic field, causes vibration, thereby converts into high-frequency vibration wave, thereby improves the efficiency and effect of energy output.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of wave frequency energy emitting devices, in particular to a wave frequency energy emitting device. BACKGROUND

[0002] At present, in the field of wave frequency energy implantation and wave frequency energy loading cabin, there are many innovative technologies, and the wave frequency energy emitter is the core technology in these fields. However, how to generate vibration energy and how to control the vibration frequency of wave frequency energy have not been fundamentally and economically solved. The existing wave frequency energy emitting devices usually generate wave frequency energy through high-power electromagnetic wave, microwave emitting head, temperature heating, ultrasonic wave and laser irradiation. These devices are very large in size, have high energy consumption, are very expensive, and the generated vibration energy frequency is also low, which is not obvious in effect. SUMMARY

[0003] In order to overcome the shortcomings of the prior art, the purpose of the present application is to provide a wave frequency energy emitting device which can be applied to the fields of health, environmental protection and agriculture to solve the problem of wave frequency energy emitting source. The present application utilizes the characteristics of phase change material or rare earth magnetostrictive material that generates expansion and deformation with the change of electromagnetic field, thereby causing vibration and converting into high-frequency vibration wave to improve the efficiency and effect of energy output.

[0004] To achieve the above purpose, the present application provides the following scheme:

[0005] A wave frequency energy emitting device comprises:

[0006] An electromagnetic modulation layer for modulating an electrical signal pulse of a preset frequency and power and generating a changing magnetic field according to the electrical signal pulse;

[0007] An energy conversion layer arranged in a magnetic field range of the changing magnetic field, the energy conversion layer being used for converting magnetic field energy of the changing magnetic field into vibration energy wave; the energy conversion layer is composed of one or two strain materials, the expansion rate and response time of each strain material being different; the vibration energy wave is used for causing resonance inside a target object to change the state of the target object.

[0008] Preferably, the strain materials are phase change material and magnetostrictive material; the phase change material and the magnetostrictive material are arranged in sequence and are connected with the electromagnetic modulation layer and the magnetostrictive material respectively; the phase change material and the magnetostrictive material are both used for generating micro-displacement according to the changing magnetic field and generating the vibration energy wave.

[0009] Preferably, the electromagnetic modulation layer comprises:

[0010] A signal controller is configured to generate the electrical signal pulse with a preset frequency and a preset power.

[0011] An electromagnetic conversion layer is connected with the signal controller and the energy conversion layer respectively, and is configured to generate the changing magnetic field according to the electrical signal pulse.

[0012] Preferably, the phase change material and the magnetostrictive material in the energy conversion layer are rare earth metal alloys; the electromagnetic conversion layer comprises a primary coil and at least one core coil, and the core coil and the primary coil are both connected with the signal generation layer.

[0013] Each of the core coils is wound around an iron core; the iron core is made of the phase change material and the magnetostrictive material.

[0014] The primary coil is wound outside the core coil, and the primary coil is surrounded by a cylindrical shell made of the phase change material and the magnetostrictive material.

[0015] Preferably, the atomic arrangement structure of the rare earth metal alloy is controlled by a preset bias electric field during the preparation of the rare earth metal alloy from the phase change material and the magnetostrictive material.

[0016] Preferably, the phase change material and the magnetostrictive material in the energy conversion layer are made into a film shape; the electromagnetic conversion layer is a flexible coil and a magnetic coating on a metal base; the metal base is connected with the output end of the signal controller, and the metal base is configured to generate the changing magnetic field.

[0017] The metal base is connected with the energy conversion layer composed of the phase change material and the magnetostrictive material.

[0018] Preferably, the signal controller further comprises:

[0019] An energy superposition layer, the energy superposition layer comprises a plurality of phase change material layers and a plurality of magnetostrictive material layers, a first layer of the energy superposition layer is a phase change material layer; the phase change material layer and the magnetostrictive material layer are sequentially and alternately arranged, the first layer of the energy superposition layer is connected with the film shape, and the energy superposition layer is configured to amplify the vibration energy wave generated by the film shape.

[0020] Preferably, the electromagnetic modulation layer is integrated into an integrated circuit chip; the integrated circuit chip is additionally provided with the energy conversion layer, and the electromagnetic modulation layer and the energy conversion layer are packaged according to a preset chip structure.

[0021] Preferably, the encapsulation structure of the electromagnetic conversion layer and the energy conversion layer comprises a cylindrical, hemispherical, spherical, annular, bipyramidal, cubic, octahedral, dodecahedral or icosahedral solid structure.

[0022] Preferably, the electromagnetic conversion layer and the energy conversion layer constitute a single emitter; a plurality of different sizes of the emitter are arranged in a multi-layer three-dimensional nested structure by sequentially three-dimensional nesting.

[0023] Preferably, the number of the emitter is three layers of nesting; the radius ratio between the three layers of the three-dimensional nested structure of the wave frequency energy emitter is the golden section ratio; the golden section ratio is 1:1.618:2.618.

[0024] According to the specific embodiments provided by the present application, the following technical effects are disclosed.

[0025] The present application provides a wave frequency energy emitter, comprising: an electromagnetic modulation layer for modulating an electrical signal pulse of a preset frequency and power, and generating a changing magnetic field according to the electrical signal pulse; an energy conversion layer arranged in a magnetic field range of the changing magnetic field, the energy conversion layer being used for converting magnetic field energy of the changing magnetic field into a vibration energy wave; the energy conversion layer is composed of one or two strain materials, and the expansion rate and response time of each strain material are different; the vibration energy wave is used for causing resonance inside a target object to change a state of the target object. The present application utilizes the characteristics that the energy conversion layer expands and shrinks with the change of the electromagnetic field, thereby causing deformation, triggering vibration, and converting into a high-frequency vibration wave, thereby improving the efficiency and effect of energy output. BRIEF DESCRIPTION OF DRAWINGS

[0026] In order to more clearly illustrate the technical solutions of the embodiments of the present application or the prior art, the drawings needed in the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0027] Figure 1 The first device structure schematic diagram in the embodiments provided by the present application;

[0028] Figure 2 The second device structure schematic diagram in the embodiments provided by the present application;

[0029] Figure 3 The double-core vibration schematic diagram in the embodiments provided by the present application;

[0030] Figure 4The three core vibration schematic diagram in the embodiment provided by the present application;

[0031] Figure 5 The first transmitter structure schematic diagram in the embodiment provided by the present application;

[0032] Figure 6 The second transmitter structure schematic diagram in the embodiment provided by the present application;

[0033] Figure 7 The transmitter basic principle schematic diagram in the embodiment provided by the present application;

[0034] Figure 8 The cylindrical structure schematic diagram in the embodiment provided by the present application;

[0035] Figure 9 The hemispherical structure schematic diagram in the embodiment provided by the present application;

[0036] Figure 10 The spherical structure schematic diagram in the embodiment provided by the present application;

[0037] Figure 11 The regular octahedron structure schematic diagram in the embodiment provided by the present application;

[0038] Figure 12 The regular dodecahedron structure schematic diagram in the embodiment provided by the present application;

[0039] Figure 13 The regular icosahedron structure schematic diagram in the embodiment provided by the present application;

[0040] Figure 14 The double cone structure schematic diagram in the embodiment provided by the present application;

[0041] Figure 15 The cylindrical device preparation flowchart in the embodiment provided by the present application.

[0042] Symbol explanation:

[0043] 1 - electromagnetic modulation layer; 2 - phase change material layer, 3 - magnetostrictive material layer, 4 - chip packaging structure, 5 - core vibration core, 6 - annular magnetic field eddy current, 7 - shell, 8 - iron core, 9 - primary coil, 10 - core coil. DETAILED DESCRIPTION

[0044] With reference to the drawings of the embodiments of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments of the present application, all the other embodiments obtained by a person of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0045] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are they necessarily mutually exclusive or alternative embodiments. It is explicitly contemplated that embodiments described herein can be combined with other embodiments.

[0046] The terms "first", "second", "third", and "fourth" and the like in the description and in the claims of the present application and the drawings referred to herein are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. Moreover, the terms "include", "have", and "contain" and any variations thereof are intended to cover a non-exclusive inclusion. For example, a process, method, product, or apparatus that comprises a list of steps, processes, methods, or the like is not necessarily limited to the listed steps, processes, methods, or the like, but can optionally include additional or alternative steps, processes, methods, or the like.

[0047] The purpose of the present application is to provide a wave frequency energy emitting device, which utilizes a phase change material layer or a rare earth magnetostrictive material layer to generate expansion and deformation with the change of electromagnetic field, thereby causing vibration and converting into high-frequency vibration waves, so as to further improve the efficiency and effect of energy output.

[0048] The present application utilizes certain phase change materials or rare earth magnetostrictive materials to generate expansion and deformation with the change of electromagnetic field, thereby causing vibration and converting into high-frequency vibration waves. The phase change material is a material capable of being excited by light or electricity to transform between crystalline and amorphous states, and the volume change is relatively obvious. The rare earth magnetostrictive material is a super magnetostrictive material containing rare earth elements, which has a higher expansion amount than ordinary magnetostrictive materials and can generate deformation at a lower magnetic field strength and respond to the change of magnetic field at an extremely fast speed. The present application utilizes the characteristics of the above-mentioned materials in the field of wave frequency energy emission.

[0049] Figure 1 The first device structure schematic diagram provided in the embodiments of the present application is shown in FIG. 1, and a wave frequency energy emitting device in the embodiments of the present application comprises: Figure 1 as shown in FIG. 1, the wave frequency energy emitting device comprises:

[0050] An electromagnetic modulation layer 1 is configured to modulate preset frequency and power of an electric signal pulse and generate a changing magnetic field according to the electric signal pulse;

[0051] An energy conversion layer is arranged in a magnetic field range of the changing magnetic field, and the energy conversion layer is configured to convert magnetic field energy of the changing magnetic field into a vibration energy wave; the energy conversion layer is composed of one or two strain materials, and each of the strain materials has different expansion rates and response times; the vibration energy wave is configured to cause resonance inside a target object to change a state of the target object.

[0052] Optionally, the electromagnetic modulation layer 1 can be an integrated circuit with a chip structure capable of generating a high-frequency changing magnetic field.

[0053] Preferably, the strain materials are phase change materials and magnetostrictive materials; the phase change materials and the magnetostrictive materials are arranged in a stack, and the phase change materials are connected to the electromagnetic modulation layer and the magnetostrictive materials respectively; the phase change materials and the magnetostrictive materials are configured to generate micro-displacement according to the changing magnetic field and generate the vibration energy wave.

[0054] Further, Figure 1 The coil or the integrated circuit layer can be arranged below, the phase change material layer 2 (the phase change material layer is made of phase change materials) can be arranged in the middle, and the magnetostrictive material layer 3 (the magnetostrictive material layer is made of magnetostrictive materials) can be arranged above. The integrated circuit is responsible for generating and controlling the electric signal and forming the changing magnetic field. The phase change material layer 2 deforms according to the changing magnetic field, is responsible for generating high-frequency vibration, and the magnetostrictive material layer is responsible for generating the energy vibration wave.

[0055] The vibration energy wave in the embodiment diffuses to the surrounding, and if the vibration frequency and the vibration energy wave of the matter in the environment are close or the same, resonance inside the object is caused. The resonance energy can intensify the vibration amplitude of atoms and molecules inside the matter, the energy is stronger, and even the internal structure is changed and becomes more ordered. Therefore, some changes occur in the physical properties of the matter.

[0056] Preferably, the electromagnetic modulation layer 1 is integrated into an integrated circuit chip; the energy conversion layer is additionally arranged on the integrated circuit chip, and the electromagnetic modulation layer 1 and the energy conversion layer are packaged according to a preset chip structure.

[0057] Specifically, the signal generation layer can be a waveform generator, a sound wave decoder, a light wave pulse generator, a magnetic field generator, or the like, that is, the electromagnetic modulation layer 1 is a device capable of forming a rapidly changing magnetic field.

[0058] Preferably, the electromagnetic modulation layer 1 includes:

[0059] a signal controller configured to generate the electrical signal pulse with a preset frequency and a preset power;

[0060] an electromagnetic conversion layer connected with the signal controller and the energy conversion layer respectively, and configured to generate the changing magnetic field according to the electrical signal pulse.

[0061] Optionally, the signal controller comprises the following forms:

[0062] a pulse signal generator, a power amplifier, an audio decoding chip, etc. can adjust the frequency and the power.

[0063] Specifically, the electromagnetic conversion layer comprises the following forms:

[0064] an electromagnetic induction coil, an electromagnetic oscillator, a piezoelectric sensor, a piezoelectric film, a magnetic coating, etc., mainly used to generate a changing magnetic field.

[0065] The frequency and the power of the device in the embodiment can be realized by software control, circuit design, power adjustment, phase change material, proportion and content of rare earth magnetostrictive material, and film thickness.

[0066] Preferably, the energy conversion layer comprises the following forms:

[0067] a rare earth alloy composed of magnetostrictive material and phase change material, a film composed of magnetostrictive material and phase change material, a chip encapsulated by layering magnetostrictive material and phase change material, etc. The energy conversion layer is used to convert magnetic energy into vibration wave.

[0068] Specifically, the integrated circuit on the wafer in the embodiment generates a high-frequency changing magnetic field, and then different phase change materials and magnetostrictive materials are layered and coated or plated, and processed. Through the superposition of multiple layers, better results can be achieved.

[0069] Preferably, the phase change material and the magnetostrictive material in the energy conversion layer can be made into a film shape; the electromagnetic conversion layer is a flexible coil and a magnetic coating of a metal substrate; the metal substrate is connected with the output end of the signal controller, and the metal substrate is used to generate the changing magnetic field.

[0070] The metal substrate is connected with the energy conversion layer composed of the phase change material and the magnetostrictive material.

[0071] Preferably, it further comprises:

[0072] An energy superposition layer includes multiple phase change material layers and multiple magnetostrictive material layers. The first layer of the energy superposition layer is a phase change material layer. The phase change material layers and the magnetostrictive material layers are stacked in a cross manner. The first layer of the energy superposition layer is bonded and connected to the thin film. The energy superposition layer is used to amplify the energy of the vibration energy wave generated by the thin film.

[0073] Furthermore, the core phase change material and rare earth magnetostrictive material can be in thin film form, or a mixture of resin and rare earth magnetostrictive powder, or an alloy smelted through directional crystallization, or a mixture of rare earth shrinkage powder and magnetic powder. To ensure effectiveness, the radial shrinkage rate should be above 200 PPM.

[0074] Furthermore, the device provided in this embodiment can be in 10 -6 ~10 -12 Response time is within seconds. A high-frequency generator is used, producing wavelengths in the micrometer range.

[0075] Preferably, the wavelength generated by the device provided in this embodiment is in the range of 4-100μm. In addition, it can also change the signal frequency as needed to generate vibration waves of other frequencies.

[0076] Figure 2 This is a schematic diagram of the second device structure provided in the embodiments of the present invention. This embodiment can be extended to include, for example... Figure 2 The multi-layered structure shown generates more frequency energy resonance through superposition.

[0077] As an alternative implementation, in conjunction with current chip manufacturing technology, the electromagnetic modulation layer 1 and the energy conversion layer can be fabricated into a chip capable of generating pulse frequencies, the frequency of which can be set by software.

[0078] Furthermore, the signals generated by the chip can be input into an electromagnetic coil or a thin metal film to produce a rapidly changing magnetic field.

[0079] Figure 3 and Figure 4 These are schematic diagrams of dual-core vibration and tri-core vibration provided in the embodiments of the present invention, as shown below. Figure 3 and Figure 4 As shown, the chip packaging structure 4 in this embodiment can be equipped with two or more vibration sources (energy conversion layers), namely the core vibration core 5, which can propagate further simply through its own resonance. Alternatively, by adding more vibration centers, resonance at the same frequency can be induced, allowing the vibration waves to travel further. The integration with the chip can also be accelerated using a ring-shaped magnetic field eddy current 6.

[0080] Figure 5 andFigure 6 The first transmitter structure schematic diagram and the second transmitter structure schematic diagram in the embodiment provided by the present application are respectively as shown in Figure 5 and Figure 6 The phase change material and the magnetostrictive material in the energy conversion layer are rare earth metal alloys; the electromagnetic conversion layer comprises a primary coil 9 and at least one core coil 10, and the core coil 10 and the primary coil 9 are connected with the signal controller;

[0081] One of the core coils 10 is wound around one iron core 8; the iron core 8 is made by laminating the phase change material and the magnetostrictive material;

[0082] The primary coil 9 is wound outside the core coil 10, and the primary coil 9 is surrounded by a cylindrical shell 7, and the shell 7 is made of the phase change material and the magnetostrictive material.

[0083] Specifically, Figure 5 The primary coil 9 in the embodiment is wound around two core coils 10, the core coils 10 are continuously wound, and the two iron cores 8 are connected to form two same-frequency cores; Figure 6 The primary coil 9 in the embodiment is wound around three core coils 10, the core coils 10 are continuously wound, and the three iron cores 8 are connected to form three same-frequency cores.

[0084] Figure 7 The transmitter basic principle schematic diagram in the embodiment provided by the present application is as shown in Figure 7 The transmitter in the embodiment sends specific electric signals to integrated circuits or electromagnetic coils through frequency control and power control on preset signals, so as to generate a changing magnetic field, the rare earth magnetostrictive material generates vibration waves (vibration energy waves) according to the changing magnetic field, and the same-frequency resonance is performed through multiple cores to realize the effect of diffusion and propagation.

[0085] Preferably, the phase change material layer 2 and the magnetostrictive material layer 3 are prepared by spin coating, vacuum evaporation or magnetron sputtering; the coating thickness of the phase change material layer 2 or the magnetostrictive material layer 3 is less than 20 μm.

[0086] Further, the thickness of the coating can be 10 nm to 20 μm.

[0087] Specifically, the phase change material layer 2 and the magnetostrictive material layer 3 can be further made into a film and attached to various components and devices (the electromagnetic modulation layer 1) generating a rapidly changing magnetic field, so that the volume and size of the components and devices are shrunk to generate micro-displacement and vibration, and continuously emit wave frequency energy.

[0088] The phase change material and magnetostrictive material are prepared by spin coating or vacuum evaporation, magnetron sputtering, and are layered and spin coated or plated, so as to achieve fine application.

[0089] Preferably, during preparation of the rare earth metal alloy from the phase change material and the magnetostrictive material, the atomic arrangement structure of the rare earth metal alloy is controlled by a preset bias electric field.

[0090] Specifically, during the process of preparing a thin film by spin coating or vacuum evaporation, magnetron sputtering, in order to achieve the maximum, ordered stretching amount and ensure the consistency of the stretching direction and displacement direction, an additional bias electric field is arranged to make the magnetic moments of the surface coating atoms arranged uniformly and combined more closely.

[0091] Further, the vibration energy wave in the embodiment spreads radially outward with the magnetic field, and the more intense and faster the change of the magnetic field is, the stronger the vibration energy is. The higher the content of the electromagnetic coil or the magnetostrictive material of the metal film is, the more the amount is used, and the stronger the vibration is.

[0092] Please refer to Figures 8 to 14 , for example Figures 8 to 14 As shown in any of the accompanying drawings, the packaging structure of the electromagnetic modulation layer 1 and the energy conversion layer is a columnar, hemispherical, spherical, annular, bipyramidal, cubic, octahedral, dodecahedral or icosahedral structure. E, k y and k x are three symmetry axes of the bipyramidal structure, respectively.

[0093] Specifically, in addition to the circular shape or the form of chip packaging, the solid forms of columnar, hemispherical, spherical, annular, bipyramidal, cubic, octahedral, dodecahedral or icosahedral can also be used. Preferably, a three-layer structure can be used, and the radii of the three layers should preferably satisfy the golden section ratio of 0.618, which is more conducive to exciting energy in space, i.e., the same configuration is composed of three layers.

[0094] Optionally, the benefits of the three-layer magnetostrictive structure are obvious. During the process of the vibration wave spreading outward from the center, resonance is generated again with the second layer and the third layer, and is strengthened, so that it is propagated farther with smaller power consumption and emits a farther distance.

[0095] Specifically, the benefits of the hemispherical or three-dimensional magnetostrictive structure are that the generated vibration wave is spherical diffusion, while the bipyramidal, octahedral, dodecahedral or icosahedral structure is more conducive to the continuous oscillation of the vibration wave inside and the generation of higher frequency oscillation, and is more likely to excite space oscillation.

[0096] Preferably, the raw materials of the phase change material layer 2 and the magnetostrictive material layer 3 are mixed slurry; the mixed slurry includes phase change material and rare earth shrinkage material powder.

[0097] Preferably, further comprising:

[0098] Magnetic field vortex, arranged around the energy conversion layer, for amplifying the energy of the vibration energy wave;

[0099] Rotary device, respectively connected with the electromagnetic modulation layer 1 and the energy conversion layer, for driving the electromagnetic modulation layer 1 and the energy conversion layer to rotate, for superimposing kinetic energy and the energy of the vibration energy wave;

[0100] Sound wave generating device, connected with the energy conversion layer, for generating sound waves or infrasound waves, and superimposing the sound waves or the infrasound waves with the vibration energy wave.

[0101] Specifically, the embodiment utilizes the micro annular changing magnetic field vortex to accelerate the vibration energy wave, further improves the energy, and diffuses the energy wave to a farther place.

[0102] Further, the embodiment utilizes the rotary device to drive the transmitter or the transmitting chip to rotate as a whole by mechanical rotation, which makes the vibration energy wave superimposed on greater kinetic energy.

[0103] Further, the embodiment utilizes the sound wave generating device to superimpose the vibration energy wave on the sound wave and the infrasound wave, thereby having greater kinetic energy.

[0104] Figure 15 The preparation process diagram of the cylindrical device in the embodiment provided by the application is shown in the figure, and the preparation process of the cylindrical wave frequency energy transmitter of the wave frequency energy transmitter is provided, and the specific steps are as follows: Figure 15

[0105] 1、Prepare a vacuum induction melting directional solidification furnace, add Tb-Dy-Fe terbium dysprosium iron or Ga-Fe iron powder in the crucible, and also add Sm and Co. The ratio of Tb-Dy-Fe-Sm-Co is 3:7:20:1:1, and the ratio of Ga-Fe-Sm-Co is 20:80:3:3.

[0106] 2, pre-evacuate to 10Pa, add argon gas protection in the melting chamber, and keep the vacuum degree below 10Pa. Start the high-frequency induction heating crucible to 1700 degrees, and keep for 60-120 minutes.

[0107] ​3. The molten metal in the crucible is poured into a double-layered hollow rod (two hollow rings, as shown in the figure). The directional solidification control system is activated to perform pull-down directional solidification, with the pull-down speed controlled within 1-5 cm / min to form directional crystal solidification. Simultaneously, during the pull-down process, the unsolidified area is kept heated at 1600 degrees Celsius using a longitudinal high-frequency induction coil.

[0108] 4. After the hollow rod has been solidified, let it cool naturally to room temperature. Open the melting furnace, clean the inside and outside of the hollow rod and the crucible of impurities, add the phase change material Ga2Sb5Te3 powder (the fineness of which should be within 20 micrometers) to the crucible, and seal the vacuum induction melting furnace.

[0109] 5. Pre-evacuate to 10 Pa, add argon gas to the melting chamber for protection, and maintain the vacuum level below 10 Pa. Start the high-frequency induction heating crucible to 1000 degrees Celsius and maintain it for 30-60 minutes.

[0110] 6. Pour the molten metal from the crucible into the innermost (first layer) cavity of the hollow rod. Activate the directional solidification control system to perform directional solidification of the rod mold. Control the pulling speed to within 3-5 cm / min to facilitate directional crystal solidification. Simultaneously, during the pulling process, use a longitudinal high-frequency induction coil to maintain heating in the unsolidified area at a temperature of 700 degrees Celsius.

[0111] 7. After the directionally solidified rod is naturally cooled to room temperature, it is machined and cut into cylindrical shapes with a thickness of 3-6 cm, and then ground and polished.

[0112] 8. Inside the cut second annular cavity, insert a multi-turn coil with an impedance of less than 50 ohms and then cast it with insulating glue.

[0113] 9. When a high-frequency pulsed current with an adjustable frequency is applied to the coil, a rapidly changing magnetic field is generated. The phase change material, magnetostrictive material located in the iron core, and the magnetostrictive material located in the outer ring will undergo slight deformation due to the changing magnetic field, causing vibration and generating wave frequency vibration energy. Because the phase change material and the magnetostrictive material have different expansion rates, a large stress will be generated inside the material. This stress will further cause changes in the magnetic field, thus continuing the vibration.

[0114] Furthermore, because the two materials have different elongation rates, their response times also differ slightly, with response times around 10. -6 ~10 -12 Within a second, this will produce a multi-wave superposition effect. The wave frequency generated by the wave frequency energy transmitter will couple out an energy wave within a frequency spectrum range based on the frequency of the input pulse frequency generator and the characteristics of the material.

[0115] Optionally, the vibration energy wave will be used in the health field, environmental protection field, agricultural field, to solve the problem of wave frequency energy emission source.

[0116] Further, two or more wave frequency energy emitters can be made to allow the vibration wave to transmit further.

[0117] The preparation process of the wave frequency energy emission device with a chip structure is also provided in the embodiment, and the specific steps are as follows:

[0118] 1. Prepare a small amount of high-quality phase change material and rare earth shrinkage material powder, and the fineness of the material should be below 20 microns, and the shrinkage rate should be above 200PPM.

[0119] 2. The above-mentioned materials are repeatedly subjected to directional treatment in a high-strength magnetic field of 1-2T for more than 48 hours to make the materials pre-stretch and shrink.

[0120] 3. Mix the material with nano-scale pure iron powder, magnetic powder, resin or other colloids, and fully stir them uniformly in a weight ratio of 2-3:6:2:9. Apply them on the chip circuit protected by insulation, and the application thickness should be below 20 microns. In this embodiment, the application is divided into three layers, and the radius ratio of the three layers should preferably comply with the golden ratio of 0.618:1:1.618.

[0121] 4. Dry the applied chip in a vacuum chamber by heating, and apply a high-strength bias electric field to make it directional in a more orderly environment.

[0122] 5. Power the chip to generate a changing magnetic field, and detect whether the stretch coefficient of the applied layer meets the expected 200PPM or above.

[0123] 6. Set the chip working program, compile the frequency change program and adjust the power size, so that the chip works at the required frequency and power, and detect the working radius of the wave frequency energy chip at different power and frequency, and the influence on the material.

[0124] 7. Protectively package the chip, and test the working stability in low and high temperature environments.

[0125] Preferably, the packaging structure of the electromagnetic conversion layer and the energy conversion layer includes a cylindrical, hemispherical, spherical, annular, bipyramidal, cubic, octahedral, dodecahedral or icosahedral solid structure.

[0126] Preferably, the electromagnetic conversion layer and the energy conversion layer constitute an emission monomer; and a plurality of different sizes of the emission monomers constitute the wave frequency energy emission device with a multi-layer stereoscopic nested structure by means of sequential stereoscopic nesting.

[0127] Preferably, the number of the emission monomers is 3; the radius ratio between the three layers of the three-dimensional nested structure of the wave frequency energy emission device is the golden section ratio; and the golden section ratio is 1:1.618:2.618.

[0128] Specifically, in addition to the chip form, the mixed paste can also be applied to the surface of any coil, circuit board or entity of a changing magnetic field (with an insulating layer for isolation), such as the surface of a cylinder, a hemisphere, a sphere, a double cone, a regular octahedron, a regular dodecahedron, and a regular icosahedron.

[0129] Further, if the chip is not prepared, any signal generator capable of generating a changing magnetic field can be connected to the coated film to obtain a partial wave frequency energy emission effect. For example, the signal generator can be a wave generator, an acoustic wave decoder, an optical wave pulse generator, or a magnetic field generator.

[0130] The embodiment also provides a preparation process of the wave frequency energy emission device with a film metal structure, and the specific steps are as follows:

[0131] 1. A flexible substrate film of polyethylene terephthalate (PET) is prepared, and a metal layer with a thickness of 50 nm-1 um is plated on the film by using a magnetron sputtering or vacuum evaporation method. The metal can be copper, nickel, zinc, or aluminum. During the entire plating process, the surface atoms are arranged uniformly in an electron bias environment.

[0132] 2. A phase change material Ga2Sb5Te3 is plated on the metal coating, and the main components are gallium, antimony, and tellurium, with a composition ratio of 2:5:3. During the entire plating process, the surface atoms are arranged uniformly in an electron bias environment.

[0133] 3. After the above process is completed, a magnetostrictive material is plated again, with a thickness of 50 nm-1 um, and the main components are terbium, dysprosium, and iron, or iron and gallium. The ratio of TbDyFe is 3:7:20, and the ratio of FeGa is 80:20. In order to improve the material performance, a proper amount of samarium Sm and cobalt Co can also be added. During the entire plating process, the surface atoms are arranged uniformly in an electron bias environment.

[0134] 4. The process 2 and the process 3 are repeated 2-3 times, and after the completion, the material is taken out and placed in a 1-2 T (tesla) high-intensity pulsed magnetic field NS directional magnetic field for directional treatment for more than 48 hours, so that the material is pre-stretched and contracted to produce uniform stretching and contraction.

[0135] 5. The bottom metal layer of the film can be connected to a pulse frequency generator to generate wave frequency energy vibration. For example, the signal generator can be a wave generator, an acoustic wave decoder, an optical wave pulse generator, or a magnetic field generator.

[0136] 6. Set the pulse frequency generator working program, program frequency change program and adjust the power size, so that the chip works at the required frequency and power, and detect the working radius of the wave energy chip at different power and frequency, and the influence on the material.

[0137] The beneficial effects of the present application are as follows:

[0138] (1) The present application can cause high shrinkage rate by low intensity magnetic field change, the vibration wave conversion efficiency is high, and the required energy consumption is extremely small.

[0139] (2) The device provided by the present application can greatly improve the vibration frequency compared with the traditional transducer, has good energy output effect, and fast response time.

[0140] (3) The device provided by the present application has the characteristics of miniaturization, and is more widely used in the market. A small amount of phase change material and rare earth thin film material or coating can realize the output of high-frequency vibration wave, and the cost is low, and the economic benefit is more obvious.

[0141] (4) The frequency and power of the device provided by the present application can be set by software or hardware according to the needs, and the output of wavelength above microns can be generated, and specific signals can be output when specific vibration frequencies are required.

[0142] (5) The device provided by the present application has more diversified structure forms, and different structure forms are fully utilized to enhance the resonance effect, such as using multiple or three magnetic shrinkage layers in the chip, using three-layer magnetic shrinkage vibration structure in the transmitter field, and using double cone, regular octahedron, regular dodecahedron, regular icosahedron and other structures to more easily obtain high energy structure.

[0143] (6) The device provided by the present application can better adapt to various application scenarios and various climate conditions, and continuously and stably provide energy output.

[0144] Each embodiment in the specification is described in a progressive manner, and each embodiment focuses on the difference from other embodiments, and the same or similar parts between each embodiment can be referred to each other.

[0145] The principles and implementation modes of the present application are described by applying specific examples in this paper, and the above embodiment description is only used to help understand the method and core idea of the present application; at the same time, for those skilled in the art, according to the idea of the present application, the specific implementation mode and application range will be changed. In view of the above, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A wave frequency energy emitting device, characterized in that, The application relates to a wave frequency energy emitting device, which comprises the following parts: An electromagnetic modulation layer for modulating preset frequency and power electric signal pulses and generating a changeable magnetic field according to the electric signal pulses, the electromagnetic modulation layer comprising a signal controller for generating the electric signal pulses with preset frequency and preset power and an electromagnetic conversion layer connected with the signal controller and an energy conversion layer respectively and used for generating the changeable magnetic field according to the electric signal pulses; the electromagnetic modulation layer is integrated into an integrated circuit chip; An energy conversion layer arranged in a magnetic field range of the changeable magnetic field, the energy conversion layer being used for converting magnetic field energy of the changeable magnetic field into vibration energy waves; the energy conversion layer is composed of two kinds of strain materials, the stretchability and response time of each strain material being different; the vibration energy waves are used for causing resonance in a target object to change the state of the target object, the strain materials comprising phase change materials and magnetostrictive materials, the phase change materials and the magnetostrictive materials in the energy conversion layer being made into film shapes; the energy conversion layer is additionally arranged on the integrated circuit chip, and the electromagnetic modulation layer and the energy conversion layer are packaged according to a preset chip structure; The phase change materials and the magnetostrictive materials are arranged in a stacking mode, and the phase change materials are connected with the electromagnetic modulation layer and the magnetostrictive materials respectively; the phase change materials and the magnetostrictive materials are used for generating micro-displacement according to the changeable magnetic field and generating the vibration energy waves; The electromagnetic conversion layer and the energy conversion layer constitute an emitting monomer; a plurality of emitting monomers with different sizes are arranged in a three-dimensional nested mode to form a multi-layer three-dimensional nested structure of the wave frequency energy emitting device; The number of the emitting monomers is three layers of nesting; the radius ratio between the three-layer three-dimensional nested structures of the wave frequency energy emitting device is a golden section ratio; the golden section ratio is 1:1.618:2.618; An energy superposition layer, the energy superposition layer comprising a plurality of phase change material layers and a plurality of magnetostrictive material layers, a first layer of the energy superposition layer being a phase change material layer; the phase change material layers and the magnetostrictive material layers are arranged in a cross-stacking mode, the first layer of the energy superposition layer being connected with the film shape, and the energy superposition layer being used for amplifying the energy of the vibration energy waves generated by the film shape; Further comprising: A rotating device connected with the electromagnetic modulation layer and the energy conversion layer respectively and used for driving the electromagnetic modulation layer and the energy conversion layer to rotate and superimposing kinetic energy and the energy of the vibration energy waves.

2. The wave energy transmitting device according to claim 1, characterized in that The phase change materials and the magnetostrictive materials in the energy conversion layer constitute rare earth metal alloys; the electromagnetic conversion layer comprises a primary coil and at least one core coil, and the core coil and the primary coil are connected with the signal generation layer; Each of the at least one core coil is wound around an iron core; the iron core is made by layering the phase change materials and the magnetostrictive materials. The core coil is externally wound with the primary coil, and the primary coil is externally surrounded by a cylindrical shell made of the phase change material and the magnetostrictive material.

3. The wave energy transmitting device according to claim 1, characterized in that The electromagnetic conversion layer is a flexible coil of a metal base and a magnetic coating layer; the metal base is connected with an output end of the signal controller, and the metal base is used for generating the changing magnetic field. The metal base is connected with the energy conversion layer composed of the phase change material and the magnetostrictive material.

4. The wave energy transmitting device according to claim 1, characterized in that The packaging structure of the electromagnetic conversion layer and the energy conversion layer includes a three-dimensional structure of a column, a semi-sphere, a sphere, a ring, a double cone, a cube, a regular octahedron, a regular dodecahedron or a regular icosahedron.

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