Rotating substrate support

Abstract

An apparatus for processing a substrate may include: a reaction chamber; a substrate support disposed within the reaction chamber and provided with a support surface for supporting the substrate; and a motor for providing rotational motion, wherein the motor is controlled and configured to generate bidirectional rotational motion between the reaction chamber and the substrate support around an axis perpendicular to the support surface.

Description

Technical Field

[0001] The present invention relates generally to substrate processing apparatus and, more particularly, to a substrate support that facilitates more uniform processing on surfaces within a reaction chamber on a substrate. Background Art

[0002] Integrated circuits consist of multiple layers of materials deposited by a variety of techniques, including chemical vapor deposition (CVD), atomic layer deposition (ALD), plasma enhanced CVD (PECVD), and plasma enhanced ALD (PEALD). Therefore, depositing materials on a semiconductor substrate is a critical step in the process of manufacturing integrated circuits. It is important to achieve a uniform treatment on the substrate surface, but treatment results often vary for a variety of reasons.

[0003] Figure 1 The results of film deposition using a PECVD device and the film thickness distribution on the substrate are shown. Due to various reasons, such as temperature distribution, gas exhaust direction and / or non-uniform electric field strength due to electrode parallelism deviation, the film thickness variation may occur within a range of about 17 nm on a layer of about 170 nm.

[0004] To alleviate this problem, a rotating substrate support may be applied. However, designing such a rotating substrate support may be difficult.

[0005] Any discussion set forth in this section (including discussion of problems and solutions) has been included in the present disclosure merely to provide a context for the present disclosure and should not be considered as an admission that any or all of the discussions were known or otherwise constituted prior art at the time the present invention was made. Summary of the invention

[0006] This summary is provided to introduce some concepts in a simplified form. These concepts are further described in detail in the detailed description of the example embodiments disclosed below. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0007] In some embodiments, an apparatus for processing a substrate is provided. The apparatus disclosed herein can allow for adjustable material deposition and / or processing on a substrate, for example to achieve more uniform material deposition and / or processing on a substrate.

[0008] In various embodiments, an apparatus for processing a substrate may include: a reaction chamber; a substrate support disposed in the reaction chamber and provided with a support surface to support the substrate; and a motor providing a rotational motion, wherein the motor is controlled and configured to generate a bidirectional rotational motion between the reaction chamber and the substrate support around an axis perpendicular to the support surface. In various embodiments, the motor may be controlled and configured to generate a rotational motion of about n times (where n=1, 2, 3...). In various embodiments, n may be 1. In various embodiments, the motor may be controlled and configured to change the direction of rotation when the rotational motion reaches about n times (where n=1, 2, 3...). In various embodiments, the motor may be controlled and configured to change the direction of rotation from a first rotational direction to an opposite second rotational direction, and vice versa, when the rotational motion reaches about n times (where n=1, 2, 3...).

[0009] In various embodiments, the apparatus may further include a controller operably connected to the motor to control the bidirectional rotational motion generated by the motor. In various embodiments, the apparatus may further include a rotation angle measuring device operably connected to the controller to measure the rotation angle between the reaction chamber and the substrate support.

[0010] In various embodiments, the substrate support may be provided with an electrical device, and the electrical device may be connected to a station in the apparatus by a wire, and the wire may be constructed and arranged to allow a rotational movement between the reaction chamber and the substrate support n times or so (where n=1, 2, 3...). In various embodiments, the electrical device may be an electrode of a plasma generator, and the wire may be an RF wire. In various embodiments, the electrical device may be a temperature sensor (e.g., a thermocouple) for measuring temperature, and the wire may be a temperature signal wire. In various embodiments, the electrical device may be a heater for heating the substrate, and the wire may be a power supply wire for the heater. In various embodiments, the wire may include a coiled cord to allow a rotational movement between the reaction chamber and the substrate support n times or so (where n=1, 2, 3...).

[0011] In various embodiments, the substrate support may be connected to a rotatable shaft, and the motor may rotate the shaft. In various embodiments, the rotatable shaft may extend through a hole in a wall of the reaction chamber, and the motor may be located outside the reaction chamber, and a seal arm may be disposed around the rotating shaft to seal the reaction chamber. In various embodiments, the substrate support may be supported on the shaft.

[0012] In various embodiments, a method of forming a film on a substrate supported by a substrate support may include: providing a substrate in a reaction chamber; supplying a gas to the substrate; rotating the substrate support about n times (where n=1, 2, 3...) in a first rotation direction; rotating the substrate support about n times (where n=1, 2, 3...) in an opposite second rotation direction; and stopping supplying the gas to the substrate. In various embodiments, forming the film may be performed by plasma enhanced atomic layer deposition (PEALD) or plasma enhanced chemical vapor deposition (PECVD).

[0013] In various embodiments, in a method of controlling an apparatus for processing a substrate, the apparatus may include: a reaction chamber; a substrate support disposed within the reaction chamber to support the substrate; and a motor for providing rotation between the substrate support and the reaction chamber, wherein controlling the apparatus includes controlling the number of rotations in a first rotational direction to be substantially equal to the number of rotations in an opposite second rotational direction.

[0014] These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the attached figures; the invention is not limited to any particular embodiment disclosed. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] A more complete understanding of exemplary embodiments of the present disclosure may be obtained by referring to the detailed description and claims when considered in conjunction with the following illustrative drawings.

[0016] Figure 1 The results of film deposition using a PECVD device and the film thickness distribution are shown;

[0017] Figure 2 is a schematic diagram of an exemplary reactor apparatus;

[0018] Figure 3 is a schematic diagram of an exemplary curly rope;

[0019] Figure 4A is a schematic diagram of a conventional reaction chamber having a rotating substrate support;

[0020] Figure 4B is a schematic diagram of an exemplary reaction chamber having a rotating substrate support; and

[0021] Figure 5 is a timing diagram according to an exemplary embodiment of the present disclosure.

[0022] It should be understood that the elements in the drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the size of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the illustrated embodiments of the present disclosure. DETAILED DESCRIPTION

[0023] Although certain embodiments and examples are disclosed below, those skilled in the art will appreciate that the disclosure extends beyond the specifically disclosed embodiments and / or uses of the disclosure and obvious modifications and equivalents thereof. Therefore, it is intended that the scope of the disclosure should not be limited by the specific embodiments described herein.

[0024] The illustrations presented herein are not meant to be actual views of any particular material, apparatus, structure, or device, but are merely representations used to describe embodiments of the present disclosure.

[0025] As used herein, the term "substrate" may refer to any underlying material that may be used, or material on which a device, circuit, or film may be formed.

[0026] As used herein, the term "atomic layer deposition" (ALD) may refer to a vapor deposition process in which a deposition cycle, preferably a plurality of consecutive deposition cycles, is performed in a processing chamber. Typically, during each cycle, a precursor is chemically adsorbed to a deposition surface (e.g., a substrate surface or a previously deposited underlying surface, such as material from a previous ALD cycle) to form a monolayer or sub-monolayer that is not easily reactive with another precursor (i.e., a self-limiting reaction). Thereafter, if desired, a reactant (e.g., another precursor or a reactive gas) may be subsequently introduced into the processing chamber for converting the chemically adsorbed precursor to the desired material on the deposition surface. Typically, the reactant is capable of further reacting with the precursor. In addition, after the chemically adsorbed precursor is converted, a purge step may also be utilized during each cycle to remove excess precursor from the processing chamber and / or to remove excess reactant and / or reaction byproducts from the processing chamber. In addition, the term "atomic layer deposition" as used herein is also meant to include processes designated by related terms, such as "chemical vapor atomic layer deposition", "atomic layer epitaxy" (ALE), molecular beam epitaxy (MBE), gas source MBE or organometallic MBE, and chemical beam epitaxy when performed with alternating pulses of precursor components, reactive gases and purge gases (e.g., inert carrier gases).

[0027] As used herein, the term "chemical vapor deposition" (CVD) may refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce the desired deposit.

[0028] As used herein, the terms "film" and "thin film" may refer to any continuous or non-continuous structure and material deposited by the methods disclosed herein. For example, "film" and "thin film" may include 2D materials, nanorods, nanotubes or nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers or clusters of atoms and / or molecules. "Film" and "thin film" may include materials or layers with pinholes, but still at least partially continuous.

[0029] Reactor equipment for ALD, CVD, etc. can be used in a variety of applications, including depositing and etching materials on substrate surfaces. Figure 2 , the reactor device 50 may include a reaction chamber 4 and a substrate support 5 (susceptor) disposed in the reaction chamber 4. The substrate support 5 may be provided with a support surface 6 to support the substrate. A motor 8 may provide a rotational motion, wherein the motor 8 is controlled and configured to generate a bidirectional rotational motion between the reaction chamber 4 and the substrate support 5 around an axis perpendicular to the support surface 6.

[0030] The motor 8 can be controlled and configured to generate a rotational movement of about n times (where n=1, 2, 3...). When the rotational movement reaches about n times (where n=1, 2, 3...), the motor 8 can be controlled and configured to change the rotational direction. When the rotational movement reaches about n times (where n=1, 2, 3...), the motor 5 can be controlled and configured to change the rotational direction from a first rotational direction to an opposite second rotational direction, and vice versa.

[0031] The apparatus 50 may further include a controller 130 operatively connected to the motor 8 for controlling the bidirectional rotational motion generated by the motor 8. The apparatus 50 may include a rotation angle measuring device 70, such as an encoder, operatively connected to the controller 130 to measure the rotation angle between the reaction chamber 4 and the substrate support 5.

[0032] The substrate support 5 may be provided with an electrical device, and the electrical device may be connected to a station in the apparatus 50 with a wire, and the wire is constructed and arranged to allow a rotational movement between the reaction chamber 4 and the substrate support 5 about n times (where n=1, 2, 3...). The electrical device may be an electrode 80 of a plasma generator, and the wire is an RF wire 12. The electrical device may be a temperature sensor (e.g., a thermocouple) for measuring temperature, and the wire may be a temperature signal wire 15. The electrical device may be a heater 9 for heating the substrate, and the wire may be a power supply wire 17 for the heater 9.

[0033] Reference Figure 3 , the wire may comprise a coiled cord to allow for n or so rotational movements between the reaction chamber 4 and the substrate support 5 (where n=1, 2, 3 . . . ).

[0034] The substrate support 5 can be connected to the rotatable shaft 7, and the motor 8 rotates the shaft 7. The rotatable shaft 7 can extend through a hole in the wall of the reaction chamber 4, and the motor 8 can be located outside the reaction chamber 4, and a magnetic seal 48 can be provided around the rotatable shaft 7 to seal the reaction chamber 4.

[0035] The substrate support 5 may also include a tool frame 40 connected to the motor 8. The flange 42 may be connected to the frame 40 by bolts 44. The flange 42 may be movably coupled to the rotatable shaft 7 by suitable means such as bearings 46. A bellows 49 is coupled between the bottom of the reaction chamber 4 and the magnetic seal 48.

[0036] The reaction chamber 4 may include a reaction space (ie, an upper chamber), which may be configured to process one or more substrates, and / or a lower chamber space 114 (ie, a lower chamber). The lower chamber space 114 may be configured to load and unload substrates from the reaction chamber.

[0037] The reaction space 112 and the lower chamber space 114 may be separated by the substrate support 5. The reaction space 112 and the lower chamber space 114 may be substantially fluidly separated or isolated from each other. For example, the substrate support 5 may fluidly separate the reaction space 112 and the lower chamber space 114 by forming at least a partial seal (i.e., at least restricting fluid flow) between the substrate support 6 and the chamber sidewall 111 of the reaction chamber 4 disposed near the substrate support outer edge of the substrate support 5.

[0038] The substrate and substrate support 5 can move relative to each other. For example, one or more lift pins (not shown) can be configured to allow the substrate to be separated from the substrate support 5 and allow the substrate to be placed in contact with the substrate support 5 (i.e., supported by the substrate support 5). The substrate support 5 can be moved up or down, for example, by a substrate support elevator, so that the substrate support 5 moves relative to the substrate. In various embodiments, the lift pins can be moved up or down, for example, by a lift pin elevator / platform, so that the substrate moves relative to the substrate support 5. The substrate support 5 and / or the lift pins can be fixed, while the other is movable. The substrate support 5 and / or the lift pins can be configured to move relative to the other.

[0039] During substrate processing (e.g., during PEALD, PECVD, etc.), when electrons travel from a distribution system (e.g., a showerhead) to the substrate support 5, an electric field may be formed around the substrate support 5 and the support surface 6. The electric field around different portions of the substrate support 5 or the support surface 6 may be different, resulting in different processing results on different portions of the substrate corresponding to different adjacent electric fields. In addition, the temperature distribution and exhaust direction may be different, resulting in different processing results.

[0040] Also refer to Figures 4 and Figure 5, a method for processing a substrate in a reaction chamber is shown. It should also be understood that embodiments of the present disclosure can be used in reaction chambers configured for a variety of deposition processes, including but not limited to PEALD, PECVD, metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and physical vapor deposition (PVD). Embodiments of the present disclosure can also be used in reaction chambers configured to process a substrate with a reactive precursor, which can also include etching processes such as reactive ion etching (RIE), inductively coupled plasma etching (ICP), and electron cyclotron resonance etching (ECR).

[0041] In order to avoid differences in processing results and line entanglement, the motor 8 may be controlled and configured to produce a bidirectional rotational motion within a specified angle, preferably about 180 degrees. Figure 5 An exemplary method is shown. The method includes the following steps: providing a substrate in a reaction chamber 4; supplying a gas to the substrate; rotating the substrate support 5n times or so (where n=1, 2, 3...) in a first rotation direction; rotating the substrate support 5n times or so (where n=1, 2, 3...) in an opposite second rotation direction; and stopping supplying the gas to the substrate.

[0042] During step 102 of providing a substrate in reaction chamber 4, a substrate is provided into reaction chamber 4. Reaction chamber 4 may form part of a cyclic deposition reactor, such as a PEALD reactor or a PECVD reactor. The various steps of the methods described herein may be performed in a single reaction chamber, or may be performed in multiple reaction chambers, such as reaction chambers of a combined tool.

[0043] During step 104, gas is supplied into the reaction chamber 4. Gas may refer to a material that is gaseous at normal temperature and pressure, a vaporized solid, and / or a vaporized liquid, and may be composed of a single gas or a gas mixture, depending on the situation. The gas may be a process gas, i.e., a gas introduced through a gas distribution component (such as a showerhead, other gas distribution devices, etc.) may be used.

[0044] During step 106, the substrate support 5 is rotated from the initial position to 180 degrees. The rotation may be gradual or periodic, preferably gradual, to improve uniformity of film thickness. During step 108, the substrate support 5 is reversely rotated from 180 degrees to -180 degrees. During step 110, the substrate support 5 is reversely rotated from -180 degrees to the initial position. During step 112, the gas is stopped and the process is complete.

[0045] Therefore, the bidirectional rotational motion can improve, i.e. reduce, the film thickness non-uniformity. In addition, as shown in FIG4 , the wire will not be damaged due to the rotation.

[0046] The exemplary embodiments disclosed above do not limit the scope of the present invention, because these embodiments are merely examples of embodiments of the present invention. Any equivalent embodiments are within the scope of the present invention. In fact, various modifications of the present invention, such as alternative useful combinations of the described elements, in addition to those shown and described herein, can become apparent to those skilled in the art from the description. Such modifications and embodiments are also intended to fall within the scope of the appended claims.

Claims

1. An apparatus for processing a substrate, comprising: Reaction chamber; A substrate support disposed in the reaction chamber and provided with a support surface for supporting the substrate; as well as a motor providing rotational motion, wherein the motor is controlled and configured to produce bidirectional rotational motion between the reaction chamber and the substrate support about an axis perpendicular to the support surface, The substrate support is provided with an electrical device and the electrical device is connected to a station in the apparatus by a line, the line comprising a coiled rope and constructed and arranged to allow a rotational movement between the reaction chamber and the substrate support n times or so, where n=1, 2, 3, ...

2. The device according to claim 1, wherein The motor is controlled and configured to generate n or so rotational motions, where n=1, 2, 3, . . . .

3. The device according to claim 2, wherein: n is 1.

4. The device according to claim 2, wherein: The motor is controlled and configured to change the direction of rotation when the rotation movement reaches about n times, where n=1, 2, 3...

5. The device according to claim 4, wherein: The motor is controlled and configured to change the rotation direction from a first rotation direction to an opposite second rotation direction, or vice versa, when the rotation movement reaches about n times, where n=1, 2, 3, . . . . .

6. The device according to claim 1, wherein: The apparatus includes a controller connected to the motor to control the bi-directional rotational motion produced by the motor.

7. The device according to claim 6, wherein: The apparatus includes a rotation angle measuring device connected to the controller to measure a rotation angle between the reaction chamber and the substrate support.

8. The device according to claim 1, wherein: The electrical device is an electrode of a plasma generator and the wire is an RF wire.

9. The device according to claim 1, wherein: The electrical device is a temperature sensor that measures temperature, and the wire is a temperature signal wire.

10. The device according to claim 7, wherein: The electric device is a heater that heats a substrate, and the wire is a power supply wire for the heater.

11. The device according to claim 1, wherein: The substrate support is connected to a rotatable shaft, and the motor rotates the shaft.

12. The device according to claim 11, wherein The rotatable shaft protrudes through a hole in the wall of the reaction chamber, and the motor is located outside the reaction chamber, and a seal is provided around the rotatable shaft to seal the reaction chamber.

13. The device according to claim 11, wherein: The substrate support is supported on the shaft.

Images