Semiconductor devices

Abstract

A semiconductor device comprises a substrate, a first light shielding layer, a light-transmitting layer, at least a second light shielding layer and a light-concentrating structure. The substrate has a photoelectric conversion element. The first light shielding layer is disposed above the substrate and has a first hole corresponding to the photoelectric conversion element. The light-transmitting layer is disposed above the first light shielding layer. The second light shielding layer is disposed in the light-transmitting layer and has a second hole corresponding to the first hole. The light-concentrating structure is disposed above the light-transmitting layer and corresponds to the second hole. The orthographic projection of the second hole on the bottom surface of the substrate has a long symmetry axis and a short symmetry axis, and the short symmetry axis is perpendicular to the long symmetry axis.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to a semiconductor device, and more particularly to a semiconductor device for receiving / collecting oblique light. Background Art

[0002] Semiconductor devices can be used in various applications. For example, in recent years, semiconductor devices with photoelectric conversion elements are often used as biometric devices, such as fingerprint recognition devices, facial recognition devices, iris recognition devices, etc. Biometric devices can use people's inherent physical characteristics (e.g., fingerprints, facial features, irises, etc.) to verify their identity, and are often used in portable devices (e.g., mobile phones, tablets, laptops, etc.). This application of biometric devices brings users a safe and convenient user experience.

[0003] However, existing biometric devices are not satisfactory in all aspects. For example, the user may easily see the reflection of the photoelectric conversion element in the biometric device. The tilt system used in the biometric device (i.e., the biometric device is designed to receive / collect tilted light) can solve the above problem, but it may also cause crosstalk. Summary of the invention

[0004] In some embodiments of the present disclosure, a semiconductor device includes at least one light shielding layer disposed in a light-transmitting layer, wherein the light shielding layer has a hole. The hole has a long symmetry axis and a short symmetry axis, which can be used to receive / collect oblique light and prevent crosstalk, thereby improving the quality of image signals from a photoelectric conversion element of the semiconductor device.

[0005] According to some embodiments of the present disclosure, a semiconductor device is provided. The semiconductor device includes a substrate having a photoelectric conversion element. The semiconductor device also includes a first light-shielding layer, which is disposed above the substrate and has a first hole corresponding to the photoelectric conversion element. The semiconductor device also includes a light-transmitting layer, which is disposed above the first light-shielding layer. The semiconductor device includes at least one second light-shielding layer, which is disposed in the light-transmitting layer and has a second hole corresponding to the first hole. The semiconductor device also includes a light-focusing structure, which is disposed above the light-transmitting layer and corresponds to the second hole. The orthographic projection of the second hole on the bottom surface of the substrate has a long symmetry axis and a short symmetry axis, and the short symmetry axis is perpendicular to the long symmetry axis.

[0006] In some embodiments, the short symmetry axis is parallel to a line connecting a center of an orthographic projection of the first hole on the bottom surface of the substrate and a center of an orthographic projection of the light-focusing structure on the bottom surface of the substrate.

[0007] In some embodiments, the short symmetry axis overlaps with a line connecting a center of an orthographic projection of the first hole on the bottom surface of the substrate and a center of an orthographic projection of the light-focusing structure on the bottom surface of the substrate.

[0008] In some embodiments, the orthographic projection of the light-concentrating structure on the bottom surface of the substrate is a circle.

[0009] In some embodiments, an orthographic projection of the second hole on the bottom surface of the substrate is an ellipse.

[0010] In some embodiments, the major symmetry axis is a major axis of an orthographic projection of the second hole on the bottom surface of the substrate, and the minor symmetry axis is a minor axis of an orthographic projection of the second hole on the bottom surface of the substrate.

[0011] In some embodiments, an orthographic projection of the second hole on the bottom surface of the substrate is a rectangle.

[0012] In some embodiments, the orthographic projection of the light-concentrating structure on the bottom surface of the substrate is a square.

[0013] In some embodiments, the orthographic projection of the light-focusing structure on the bottom surface of the substrate is a square, and the orthographic projection of the second hole on the bottom surface of the substrate is a rectangle.

[0014] In some embodiments, an orthographic projection of the second hole on the bottom surface of the substrate is a polygon.

[0015] In some embodiments, the semiconductor device further includes a third light shielding layer, which is disposed above the light-transmitting layer and has a third hole corresponding to the second hole.

[0016] In some embodiments, the light-focusing structure covers the third hole.

[0017] In some embodiments, the third hole has the same shape as the light-focusing structure.

[0018] In some embodiments, the distance between the first light shielding layer and the at least one second light shielding layer is different from the distance between the at least one second light shielding layer and the third light shielding layer.

[0019] In some embodiments, the material of the first light shielding layer includes metal.

[0020] In some embodiments, the material of the at least one second light shielding layer includes photoresist, ink, molding compound, solder mask material, epoxy resin, or a combination thereof.

[0021] In some embodiments, the light-focusing structure includes a micro-lens structure, a micro-pyramid structure, a micro-trapezoidal structure, or a refractive index gradient structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The following will be described in detail with reference to the accompanying drawings. It should be noted that the various characteristic components are not drawn to scale and are only used for illustration. In fact, the size of the components may be enlarged or reduced to clearly show the technical features of the embodiments of the present disclosure.

[0023] Figure 1 A partial cross-sectional view of a semiconductor device according to an embodiment of the present disclosure is shown.

[0024] Figure 2 A schematic diagram showing an orthographic projection of a first hole on the bottom surface of a substrate, an orthographic projection of a second hole on the bottom surface of the substrate, and an orthographic projection of a focusing structure on the bottom surface of the substrate according to an embodiment of the present disclosure.

[0025] Figure 3 A schematic diagram showing an orthographic projection of a first hole on the bottom surface of a substrate, an orthographic projection of a second hole on the bottom surface of the substrate, and an orthographic projection of a focusing structure on the bottom surface of the substrate according to another embodiment of the present disclosure.

[0026] Figure 4 A schematic diagram showing an orthographic projection of a first hole on the bottom surface of a substrate, an orthographic projection of a second hole on the bottom surface of the substrate, and an orthographic projection of a focusing structure on the bottom surface of the substrate according to another embodiment of the present disclosure.

[0027] Figure 5 A schematic diagram showing an orthographic projection of a second hole on the bottom surface of a substrate according to an embodiment of the present disclosure.

[0028] Figure 6 A partial cross-sectional view of a semiconductor device according to an embodiment of the present disclosure is shown.

[0029] The reference numerals are as follows:

[0030] 100,102:Semiconductor devices

[0031] 10:Substrate

[0032] 10B: Bottom surface

[0033] 12: Photoelectric conversion element

[0034] 21: First light shielding layer

[0035] 21A: First hole

[0036] 21C: Cross-sectional area of ​​the first hole

[0037] 21P,21'P: Orthographic projection

[0038] 23: Second light shielding layer

[0039] 23A: Second hole

[0040] 23C: Cross-sectional area of ​​the second hole

[0041] 23L, 23'L, 23"L: long axis of symmetry

[0042] 23P, 23'P, 23"P: Orthographic projection

[0043] 23S, 23'S, 23"S: short symmetry axis

[0044] 25: The third shading layer

[0045] 25A: The third hole

[0046] 30: light-transmitting layer

[0047] 40: Focusing structure

[0048] 40P,40'P: Orthographic projection

[0049] D1: The distance between the first shading layer and the second shading layer

[0050] D2: The distance between the second shading layer and the third shading layer

[0051] L: Connection DETAILED DESCRIPTION

[0052] The following disclosure provides many different embodiments or examples to implement the different features of the present invention. The following disclosure describes specific examples of various components and their arrangement to simplify the description. Of course, these specific examples are not intended to be limiting. For example, if the present disclosure describes an embodiment in which a first characteristic component is formed on or above a second characteristic component, it means that it may include an embodiment in which the first characteristic component and the second characteristic component are in direct contact, and may also include an embodiment in which an additional characteristic component is formed between the first characteristic component and the second characteristic component, so that the first characteristic component and the second characteristic component may not be in direct contact.

[0053] It should be understood that additional operating steps may be implemented before, during or after the method, and in other embodiments of the method, some operating steps may be replaced or omitted.

[0054] In addition, spatially related terms such as "below", "below", "lower", "above", "above", "higher" and similar terms may be used. These spatially related terms are used to facilitate the description of the relationship between one (some) elements or features and another (some) elements or features in the drawings. These spatially related terms include different orientations of the device in use or operation, as well as the orientations described in the drawings. When the device is turned to a different orientation (rotated 90 degrees or other orientations), the spatially related adjectives used therein will also be interpreted according to the turned orientation.

[0055] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meanings as those commonly understood by those skilled in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined in the embodiments of the present disclosure.

[0056] The different embodiments disclosed below may repeatedly use the same reference symbols and / or marks. These repetitions are for the purpose of simplicity and clarity, and are not intended to limit the specific relationship between the different embodiments and / or structures discussed.

[0057] The semiconductor device in the embodiment of the present disclosure can be used as a biometric identification device, such as a fingerprint identification device, but the present disclosure is not limited thereto. The semiconductor device shown in the embodiment of the present disclosure can also be applied to other suitable devices according to requirements.

[0058] Figure 1 FIG. 1 is a partial cross-sectional view of a semiconductor device 100 according to an embodiment of the present disclosure. Figure 1 Some components of the semiconductor device 100 may be omitted.

[0059] Reference Figure 1 , the semiconductor device 100 includes a substrate 10. In some embodiments, the material of the substrate 10 may include an elemental semiconductor (e.g., silicon or germanium), a compound semiconductor (e.g., silicon carbide (SiC), gallium arsenide (GaAs), indium arsenide (InAs), or indium phosphide (InP)), an alloy semiconductor (e.g., silicon germanium (SiGe), silicon germanium carbide (SiGeC), gallium arsenic phosphide (GaAsP), or gallium indium phosphide (GaInP)), other suitable semiconductors, or a combination thereof, but the embodiments of the present disclosure are not limited thereto.

[0060] In some embodiments, the substrate 10 may be a semiconductor-on-insulator substrate. For example, the substrate 10 may be a silicon-on-insulator substrate or a germanium-on-insulator substrate, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the substrate 10 may be a semiconductor wafer (e.g., a silicon wafer or other suitable semiconductor wafer). In some embodiments, the substrate 10 may include various conductive features, such as conductive lines or vias. For example, the conductive features may be formed of aluminum (Al), copper (Cu), tungsten (W), their respective alloys, other suitable conductive materials, or combinations thereof, but the embodiments of the present disclosure are not limited thereto.

[0061] like Figure 1 As shown, the substrate 10 may have a plurality of photoelectric conversion elements 12. In some embodiments, the photoelectric conversion element 12 may be formed by a process such as an ion implantation process and / or a diffusion process. For example, the photoelectric conversion element 12 may be configured to form a transistor, a photodiode, a PIN diode and / or a light emitting diode, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the photoelectric conversion element 12 may form an array structure, but the embodiments of the present disclosure are not limited thereto.

[0062] Reference Figure 1 The semiconductor device 100 includes a first light shielding layer 21, and the first light shielding layer 21 is disposed above the substrate 10. Figure 1 As shown, the first light shielding layer 21 may have a plurality of first holes 21A corresponding to the photoelectric conversion element. In some embodiments, the material of the first light shielding layer 21 may include metal, such as tungsten (W), copper (Cu), silver (Ag), etc., but the embodiments of the present disclosure are not limited thereto. In some other embodiments, the material of the first light shielding layer 21 may include photoresist (e.g., black photoresist or other suitable non-transparent photoresist), ink (e.g., black ink or other suitable non-transparent ink), molding compound (e.g., black molding compound or other suitable non-transparent molding compound), solder mask (e.g., black solder mask or other suitable non-transparent solder mask), (black) epoxy resin polymer, other suitable materials or a combination of the foregoing materials. In some embodiments, the material of the first light shielding layer 21 may include photocurable material, thermosetting material or a combination of the foregoing materials, but the embodiments of the present disclosure are not limited thereto.

[0063] In some embodiments, the material of the first light shielding layer 21 may be formed on the substrate 10 by a deposition process, such as a deposition process physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), molecular beam epitaxy (MBE), liquid phase epitaxy (LPE), other similar technologies or a combination thereof, but the embodiments of the present disclosure are not limited thereto. Then, the material of the first light shielding layer 21 may be patterned to form a Figure 1 In more detail, some parts of the material of the first light shielding layer 21 may be removed during the patterning process to form the first hole 21A. In some embodiments, the patterning process may include soft baking, mask aligning, exposure,

[0064] The invention may include exposure, post-exposure baking, developing, rinsing, drying, other suitable processes or combinations thereof, but the embodiments of the present disclosure are not limited thereto.

[0065] Reference Figure 1 The semiconductor device 100 includes a light-transmitting layer 30, and the light-transmitting layer 30 is disposed above the first light-shielding layer 21. Figure 1 As shown, the light-transmitting layer 30 may also be filled in the first hole 21A of the first light-shielding layer 21 and disposed above the photoelectric conversion element 12. In some embodiments, the material of the light-transmitting layer 30 may include transparent photoresist, polyimide, epoxy resin, other suitable materials, or a combination thereof, but the embodiments of the present disclosure are not limited thereto. In some embodiments, the material of the light-transmitting layer 30 may include a photocurable material, a thermosetting material, or a combination thereof. For example, a spin-on coating process may be performed to coat the material of the light-transmitting layer 30 above the first light-shielding layer 21 and the photoelectric conversion element 12 (filled in the first hole 21A of the first light-shielding layer 21) to form the light-transmitting layer 30, but the embodiments of the present disclosure are not limited thereto.

[0066] Reference Figure 1 , the semiconductor device 100 includes at least one second light shielding layer 23, and the second light shielding layer 23 is disposed in the light-transmitting layer 30. Figure 1As shown, the second light shielding layer 23 has a plurality of second holes 23A corresponding to the first holes 21A and the photoelectric conversion element 12. In some embodiments, the cross-sectional area 23C of the second holes 23A of the second light shielding layer 23 is different from the cross-sectional area 21C of the first holes 21A of the first light shielding layer 21. For example, the cross-sectional area 23C of the second holes 23A of the second light shielding layer 23 may be greater than the cross-sectional area 21C of the first holes 21A of the first light shielding layer 21, but the embodiments of the present disclosure are not limited thereto.

[0067] In some other embodiments, the material of the second light shielding layer 23 may include photoresist (e.g., black photoresist or other suitable non-transparent photoresist), ink (e.g., black ink or other suitable non-transparent ink), molding compound (e.g., black molding compound or other suitable non-transparent molding compound), solder mask (e.g., black solder mask or other suitable non-transparent solder mask), (black) epoxy polymer, other suitable materials or a combination of the foregoing materials. In some embodiments, the material of the second light shielding layer 23 may include photocurable material, thermal curable material or a combination of the foregoing materials, but the embodiments of the present disclosure are not limited thereto.

[0068] In some embodiments, a portion of the light-transmitting layer 30 is formed before forming the second light-shielding layer 23. Then, the material of the second light-shielding layer 23 can be deposited and patterned on this portion of the light-transmitting layer 30 through a deposition process and a patterning process. Examples of the deposition process and the patterning process are as described above and are not repeated here. Then, another portion of the light-transmitting layer 30 is formed above the second light-shielding layer 23 and filled in the second hole 23A, so that the second light-shielding layer 23 can be disposed in the light-transmitting layer 30, but the embodiments of the present disclosure are not limited thereto.

[0069] Reference Figure 1 , the semiconductor device 100 includes a plurality of light-concentrating structures 40, and the light-concentrating structures 40 are disposed above the light-transmitting layer 30. Figure 1 As shown, the focusing structure 40 may correspond to the second hole 23A, the first hole 21A and the photoelectric conversion element 12. In some embodiments, the focusing structure 40 may include a micro-lens structure, but the embodiments of the present disclosure are not limited thereto. In some other embodiments, the focusing structure 40 may include a micro-pyramid structure, a micro-trapezoidal structure or a gradient-index structure.

[0070] In some embodiments, the semiconductor device 100 can be referred to as an inclined system. That is, the semiconductor device 100 can be used to receive / collect inclined light (e.g., light with an incident angle between 30 degrees and 50 degrees), so that the reflection of the photoelectric conversion element 12 in the semiconductor device (biometric recognition device) 100 is not easily visible to the user.

[0071] Furthermore, the shape of the second hole 23A of the second light shielding layer 23 in the semiconductor device 100 may be different from that of a general hole in a conventional semiconductor device (biometric recognition device). In some embodiments of the present disclosure, the second hole 23A may have a long symmetry axis and a short symmetry axis, wherein the short symmetry axis is perpendicular to the long symmetry axis. Figure 2 Describe in more detail.

[0072] Figure 2 A schematic diagram showing an orthographic projection 21P of a first hole 21A on the bottom surface 10B of a substrate 10, an orthographic projection 23P of a second hole 23A on the bottom surface 10B of a substrate 10, and an orthographic projection 40P of a light-condensing structure 40 on the bottom surface 10B of a substrate 10 according to an embodiment of the present disclosure is shown. Figure 1 and Figure 2 In some embodiments, the orthographic projection 23P of the second hole 23A on the bottom surface 10B of the substrate 10 has a long symmetry axis 23L and a short symmetry axis 23S, and the short symmetry axis 23S is perpendicular to the long symmetry axis 23L. Figure 2 As shown, the orthographic projection 23P of the second hole 23A on the bottom surface 10B of the substrate 10 is an ellipse, but the embodiment of the disclosure is not limited thereto.

[0073] Furthermore, in some embodiments, the short symmetry axis 23S is parallel to a line L connecting the center of the orthographic projection 21P of the first hole 21A on the bottom surface 10B of the substrate 10 and the center of the orthographic projection 40P of the light-condensing structure 40 on the bottom surface 10B of the substrate 10. In more detail, the short symmetry axis 23S of the orthographic projection 23P of the second hole 23A on the bottom surface 10B of the substrate 10 may overlap with the line L. In other words, an extension line of the short symmetry axis 23S may pass through the center of the orthographic projection 21P of the first hole 21A on the bottom surface 10B of the substrate 10 and the center of the orthographic projection 40P of the light-condensing structure 40 on the bottom surface 10B of the substrate 10.

[0074] like Figure 2As shown, in some embodiments, the orthographic projection 40P of the light-concentrating structure 40 on the bottom surface 10B of the substrate 10 is circular, the orthographic projection 23P of the second hole 23A on the bottom surface 10B of the substrate 10 is elliptical, and the orthographic projection 21P of the first hole 21A on the bottom surface 10B of the substrate 10 is circular. In other words, the long symmetry axis 23L is the long axis of the orthographic projection 23P of the second hole 23A, and the short symmetry axis 23S is the short axis of the orthographic projection 23P of the second hole 23A, but the embodiments of the present disclosure are not limited thereto.

[0075] Figure 3 A schematic diagram showing an orthographic projection 21'P of a first hole 21A on the bottom surface 10B of a substrate 10, an orthographic projection 23'P of a second hole 23A on the bottom surface 10B of a substrate 10, and an orthographic projection 40'P of a light-condensing structure 40 on the bottom surface 10B of a substrate 10 according to another embodiment of the present disclosure is shown. Figure 1 and Figure 3 In some embodiments, the orthographic projection 23 ′P of the second hole 23A on the bottom surface 10B of the substrate 10 has a long symmetry axis 23 ′L and a short symmetry axis 23 ′S, and the short symmetry axis 23 ′S is perpendicular to the long symmetry axis 23 ′L.

[0076] like Figure 3 As shown, in some embodiments, the orthographic projection 40'P of the focusing structure 40 on the bottom surface 10B of the substrate 10 is a square, the orthographic projection 23'P of the second hole 23A on the bottom surface 10B of the substrate 10 is a rectangle, and the orthographic projection 21'P of the first hole 21A on the bottom surface 10B of the substrate 10 is a square, but the embodiments of the present disclosure are not limited to this.

[0077] Although in the aforementioned embodiment, the orthographic projection of the light-condensing structure 40 on the bottom surface 10B of the substrate 10 and the orthographic projection of the first hole 21A on the bottom surface 10B of the substrate 10 have the same shape, the embodiment of the present disclosure is not limited thereto. Figure 4 A schematic diagram showing an orthographic projection 21 ′P of a first hole 21A on the bottom surface 10B of a substrate 10 , an orthographic projection 23 ′P of a second hole 23A on the bottom surface 10B of the substrate 10 , and an orthographic projection 40P of a light-condensing structure 40 on the bottom surface 10B of the substrate 10 according to another embodiment of the present disclosure.

[0078] like Figure 4 As shown, in some embodiments, the orthographic projection 40P of the focusing structure 40 on the bottom surface 10B of the substrate 10 is circular, the orthographic projection 23'P of the second hole 23A on the bottom surface 10B of the substrate 10 is rectangular, and the orthographic projection 21'P of the first hole 21A on the bottom surface 10B of the substrate 10 is square, but the embodiments of the present disclosure are not limited to this.

[0079] In some other embodiments, the second hole 23A of the second light shielding layer 23 in the semiconductor device 100 may also have other shapes. Figure 5 FIG. 2 is a schematic diagram showing an orthographic projection 23″P of a second hole 23A on the bottom surface 10B of a substrate 10 according to an embodiment of the present disclosure. Figure 1 and Figure 5 In some embodiments, the orthographic projection 23"P of the second hole 23A on the bottom surface 10B of the substrate 10 has a long symmetry axis 23"L and a short symmetry axis 23"S, and the short symmetry axis 23"S is perpendicular to the long symmetry axis 23"L.

[0080] like Figure 5 As shown, the orthographic projection 23 ″P of the second hole 23A on the bottom surface 10B of the substrate 10 is a polygon, but the embodiment of the present disclosure is not limited thereto.

[0081] Since the second hole 23A of the second light-shielding layer 23 in the embodiment of the present disclosure (or the orthographic projection of the second hole 23A on the bottom surface 10B of the substrate 10) has a long symmetry axis and a short symmetry axis, and the short symmetry axis is perpendicular to the long symmetry axis, it can be used to receive / collect oblique light and prevent crosstalk, thereby improving the quality of the image signal from the photoelectric conversion element 12 of the semiconductor device 100.

[0082] Figure 6 FIG. 1 is a partial cross-sectional view of a semiconductor device 102 according to an embodiment of the present disclosure. Figure 6 Some components of the semiconductor device 102 may be omitted.

[0083] Reference Figure 6 , the semiconductor device 102 may have Figure 1 The structure is similar to the semiconductor device 100 shown in FIG. The difference is that Figure 6 The semiconductor device 102 shown may further include a third light shielding layer 25, and the third light shielding layer 25 is disposed above the light-transmitting layer 30. Figure 6 As shown, the third light shielding layer 25 may have a plurality of third holes 25A corresponding to the second hole 23A, the first hole 21A and the photoelectric conversion element 12 .

[0084] In some embodiments, the material of the third light shielding layer 25 may be similar to that of the second light shielding layer 23 , and the method of forming the third light shielding layer 25 and the third hole 25A may be similar to that of the second light shielding layer 23 and the second hole 23A, which will not be repeated here.

[0085] like Figure 6As shown, in some embodiments, the light focusing structure 40 may cover the third hole 25A of the third light shielding layer 25. For example, the third hole 25A may have the same shape as the light focusing structure 40, but the embodiments of the present disclosure are not limited thereto.

[0086] In some embodiments, the distance D1 between the first light shielding layer 21 and the second light shielding layer 23 may be different from the distance D2 between the second light shielding layer 23 and the third light shielding layer 25, but the embodiments of the present disclosure are not limited thereto. In some other embodiments, the distance D1 between the first light shielding layer 21 and the second light shielding layer 23 may be equal to the distance D2 between the second light shielding layer 23 and the third light shielding layer 25, which may be adjusted according to actual needs.

[0087] Similarly, in Figure 6 In the illustrated embodiment, the second hole 23A of the second light shielding layer 23 in the semiconductor device 102 may have a long symmetry axis and a short symmetry axis, wherein the short symmetry axis is perpendicular to the long symmetry axis. In other words, the orthographic projection of the second hole 23A on the bottom surface 10B of the substrate 10 may be as shown in FIG. Figure 2 The orthographic projection 23P shown, Figure 3 and Figure 4 The orthographic projection 23'P shown or Figure 5 The orthographic projection 23"P is shown, but the embodiment of the present disclosure is not limited thereto.

[0088] In summary, since the holes (or the orthographic projection of the holes on the bottom surface of the substrate) of the intermediate light-shielding layer (for example, the second light-shielding layer 23) in the embodiment of the present disclosure have a long symmetry axis and a short symmetry axis, and the short symmetry axis is perpendicular to the long symmetry axis, it can be used to receive / collect oblique light and prevent crosstalk, thereby improving the quality of the image signal from the photoelectric conversion element of the semiconductor device.

[0089] The above summarizes the components of several embodiments so that technicians in the technical field to which the present disclosure belongs can better understand the viewpoints of the embodiments of the present disclosure. It should be understood by technicians in the technical field to which the present disclosure belongs that they can design or modify other processes and structures based on the embodiments of the present disclosure to achieve the same purposes and / or advantages as the embodiments introduced herein. It should also be understood by technicians in the technical field to which the present disclosure belongs that such equivalent structures do not deviate from the spirit and scope of the present disclosure, and they can make various changes, substitutions and replacements without violating the spirit and scope of the present disclosure. Therefore, the scope of protection of the present disclosure shall be determined by the attached claims. In addition, although the present disclosure has been disclosed as above with several preferred embodiments, it is not intended to limit the present disclosure.

[0090] References throughout this specification to features, advantages, or similar language do not imply that all features and advantages that may be realized using the present disclosure should or may be realized in any single embodiment of the present disclosure. Conversely, language referring to features and advantages is understood to mean that a particular feature, advantage, or characteristic described in conjunction with an embodiment is included in at least one embodiment of the present disclosure. Thus, discussions of features and advantages and similar language throughout this specification may, but do not necessarily, represent the same embodiment.

[0091] Furthermore, in one or more embodiments, the described features, advantages, and characteristics of the present disclosure may be combined in any suitable manner. Based on the description herein, those skilled in the relevant art will appreciate that the present disclosure may be implemented without one or more specific features or advantages of a particular embodiment. In other cases, additional features and advantages may be identified in certain embodiments, which may not be present in all embodiments of the present disclosure.

Claims

1. A semiconductor device comprising: a substrate having a photoelectric conversion element; A first light shielding layer is disposed above the substrate and has a first hole corresponding to the photoelectric conversion element; a light-transmitting layer, disposed above the first light-shielding layer; At least one second light shielding layer, disposed in the light-transmitting layer and having a second hole corresponding to the first hole; as well as A light-concentrating structure is disposed above the light-transmitting layer and corresponds to the second hole; wherein the orthographic projection of the second hole on the bottom surface of the substrate has a long symmetry axis and a short symmetry axis, and the short symmetry axis is perpendicular to the long symmetry axis; wherein the short symmetry axis is parallel to a line connecting the center of the orthographic projection of the first hole on the bottom surface of the substrate and the center of the orthographic projection of the light-focusing structure on the bottom surface of the substrate; It also includes a third light shielding layer, which is arranged above the light-transmitting layer and has a third hole corresponding to the second hole. The distance between the first light shielding layer and the second light shielding layer is equal to the distance between the second light shielding layer and the third light shielding layer. 2 . The semiconductor device as claimed in claim 1 , wherein the short symmetry axis overlaps with a line connecting a center of an orthographic projection of the first hole on the bottom surface of the substrate and a center of an orthographic projection of the light-focusing structure on the bottom surface of the substrate.

3. The semiconductor device as claimed in claim 2, wherein the orthographic projection of the focusing structure on the bottom surface of the substrate is a circle, the orthographic projection of the second hole on the bottom surface of the substrate is an ellipse, the major symmetry axis is a major axis of the orthographic projection of the second hole on the bottom surface of the substrate, and the minor symmetry axis is a minor axis of the orthographic projection of the second hole on the bottom surface of the substrate. 4 . The semiconductor device as claimed in claim 2 , wherein the orthographic projection of the light-concentrating structure on the bottom surface of the substrate is a circle, and the orthographic projection of the second hole on the bottom surface of the substrate is a rectangle. 5 . The semiconductor device as claimed in claim 2 , wherein an orthographic projection of the light-concentrating structure on the bottom surface of the substrate is a square, and an orthographic projection of the second hole on the bottom surface of the substrate is a rectangle. The semiconductor device as claimed in claim 1 , wherein an orthographic projection of the second hole on the bottom surface of the substrate is a polygon. 7 . The semiconductor device as claimed in claim 1 , wherein the light-concentrating structure covers the third hole, and the third hole has the same shape as the light-concentrating structure.

8. A semiconductor device as described in claim 1, wherein the material of the first light-shielding layer includes metal, the material of the at least one second light-shielding layer includes photoresist, ink, molding compound, solder mask, epoxy resin or a combination of the foregoing materials, and the focusing structure includes a microlens structure, a micro-cone structure, a micro-trapezoidal structure or a refractive index gradient structure.

Images