Light sensor structure

Abstract

The present application discloses a light sensor structure, including a substrate, a light sensing component, a peripheral wall and a first reflective material layer. The substrate includes a plurality of metal pads. The light sensing component is disposed on the substrate and electrically connected to the plurality of metal pads. The peripheral wall is disposed on the substrate, and the peripheral wall and the substrate form a receiving space. The metal pad and the light sensing component are located in the receiving space. The first reflective material layer is disposed in the receiving space, and the first reflective material layer surrounds the light sensing component.

Description

Technical Field

[0001] The present application relates to a light sensor structure, and in particular to a high-efficiency light sensor structure. Background Art

[0002] First of all, light sensors are sensing components that can sense light or other electromagnetic energy, and their uses are quite extensive. Generally speaking, commercially available ultraviolet disinfection equipment uses UV light sensors to detect ultraviolet rays (UV). Since the intensity of UV light determines the efficiency of sterilization, the sensed UV light intensity can remind users whether the product needs to be replaced.

[0003] The main factors for evaluating the performance of a light sensor are photocurrent and response time. However, it is difficult for current UV light sensors to take both into account. In other words, the performance of current light sensor structures may be sufficient photocurrent but too slow response time, or short response time but insufficient photocurrent.

[0004] Therefore, how to improve the structural design to take into account both the photocurrent and the response time to overcome the above-mentioned defects has become one of the important issues to be solved in this field. Summary of the invention

[0005] The technical problem to be solved by the present application is to provide a light sensor structure in view of the deficiencies of the prior art, including a substrate, a light sensing component, a peripheral wall and a first reflective material layer. The substrate includes a plurality of metal pads. The light sensing component is arranged on the substrate and electrically connected to the plurality of metal pads. The peripheral wall is connected to the substrate, and the peripheral wall and the substrate form a receiving space, and the metal pad and the light sensing component are located in the receiving space. The first reflective material layer is arranged in the receiving space, and the first reflective material layer surrounds the light sensing component.

[0006] Optionally, the light sensing component is disposed on one of the plurality of metal pads.

[0007] Optionally, the light sensing component is a Schottky diode or a photoresistor.

[0008] Optionally, the upper surface of the optical sensing component is coated with a thin film, and the thin film is silicone or fluoropolymer.

[0009] Optionally, the refractive index of the film is smaller than the refractive index of the light sensing component.

[0010] Optionally, the first reflective material layer is inclined upward from the light sensing component toward the outer peripheral wall.

[0011] Optionally, the first reflective material layer is silicone or fluoropolymer.

[0012] Optionally, the first reflective material layer contains a doping material, and the doping material includes one or more of the following group: polytetrafluoroethylene, perfluoroethylene propylene copolymer, perfluoroalkyl compound, ethylene-tetrafluoroethylene copolymer and zirconium dioxide.

[0013] Optionally, the weight percentage of the doping material in the first reflective material layer is 30% to 70%.

[0014] Optionally, the light sensing component rotates along the surface of the substrate at a rotation angle.

[0015] Optionally, the rotation angle is between 40 and 50 degrees.

[0016] Optionally, the light sensor structure further includes: a base layer, which is disposed in the accommodating space and surrounds the light sensing component, and the base layer is located below the first reflective material layer.

[0017] Optionally, the base layer is selected from the following group: silicone, fluoropolymer, polytetrafluoroethylene, perfluoroethylene-propylene copolymer, perfluoroalkyl compound, ethylene-tetrafluoroethylene copolymer and any combination thereof.

[0018] Optionally, a contact surface between the base layer and the first reflective material layer is not higher than an upper surface of the light sensing component.

[0019] Optionally, the optical sensor structure further includes: a lens assembly, which is stacked on the outer wall.

[0020] Optionally, the lens component is a plano-convex lens, and a convex surface of the plano-convex lens faces the light sensing component.

[0021] Optionally, the lens component is a convex-concave lens, and a convex surface of the convex-concave lens faces the light sensing component.

[0022] Optionally, a surface of the lens component facing away from the light sensing component is coated with an anti-reflection layer.

[0023] Optionally, the anti-reflection layer includes tantalum pentoxide and silicon dioxide stacked on each other or hafnium dioxide and silicon dioxide stacked on each other.

[0024] Optionally, the light sensor structure further includes: a resistor component, the resistor component is electrically connected to the light sensing component.

[0025] Optionally, the first reflective material layer covers the resistor component.

[0026] Optionally, the resistor component is disposed on the substrate and connected in parallel with the light sensing component.

[0027] Optionally, the resistor component is disposed on the substrate, and the light sensing component is stacked on the resistor component, and the resistor component and the light sensing component are connected in parallel.

[0028] One of the beneficial effects of the present application is that the light sensor structure provided by the present application can increase the amount of light incident on the light sensing component in the light sensor structure through the technical solution of "a first reflective material layer is set in the accommodating space, and the first reflective material layer surrounds the light sensing component", thereby increasing the photocurrent generated by the light sensing component.

[0029] To further understand the features and technical contents of the present application, please refer to the following detailed description and drawings of the present application. However, the drawings provided are only for reference and illustration and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 FIG. 1 is a schematic diagram of a light sensor structure according to a first embodiment of the present application.

[0031] Figure 2 FIG. 1 is a schematic diagram of a light sensor structure according to a second embodiment of the present application.

[0032] Figure 3A FIG. 1 is a schematic top view of a light sensor structure according to a first embodiment of the present application.

[0033] Figure 3B FIG. 1 is a schematic top view of a light sensor structure according to a third embodiment of the present application.

[0034] Figure 4 FIG. 4 is a schematic diagram of a light sensor structure according to a fourth embodiment of the present application.

[0035] Figure 5 FIG. 1 is a schematic diagram of a light sensor structure according to a fifth embodiment of the present application.

[0036] Figure 6 FIG. 1 is a schematic diagram of a light sensor structure according to a sixth embodiment of the present application.

[0037] Figure 7 FIG. 1 is a schematic diagram of a light sensor structure according to a seventh embodiment of the present application. DETAILED DESCRIPTION

[0038] The following is an explanation of the implementation of the "light sensor structure" disclosed in this application through specific embodiments. Those skilled in the art can understand the advantages and effects of this application from the contents disclosed in this specification. This application can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this application. In addition, the drawings of this application are only simple schematic illustrations and are not depicted according to actual dimensions. It is stated in advance. The following implementation methods will further explain the relevant technical contents of this application in detail, but the disclosed contents are not intended to limit the scope of protection of this application.

[0039] It should be understood that, although the terms "first", "second", "third", etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are mainly used to distinguish one element from another element. In addition, the term "or" used herein may include any one or more combinations of the associated listed items depending on the actual situation.

[0040] First embodiment

[0041] First, see Figure 1 As shown, the first embodiment of the present application provides a light sensor structure M, which mainly includes: a substrate 1, a light sensing component 2, an outer peripheral wall 3 and a first reflective material layer 5.

[0042] The substrate 1 includes a plurality of metal pads 10, which are located on one side of the substrate 1 and are electrically connected to an external electrode Z2 located on the other side of the plurality of metal pads 10 through a conductive column Z1. The substrate 1 may be, for example, a PCB board, but the present application is not limited thereto. The light sensing component 2 is disposed on the substrate 1 and is electrically connected to the plurality of metal pads 10. The plurality of metal pads 10 have different polarities, such as anode or cathode. For example, the light sensing component 2 is disposed on one of the plurality of metal pads 10, that is, the light sensing component 2 may be fixed on one of the metal pads 10 of the substrate 1 by conductive silver glue, and then the wires are connected to the anode metal pad 10 and the cathode metal pad 10 by a wire bonding process. The light sensor structure M is a sensor that converts a light signal into a telecommunication signal using the light sensing component 2. In the present application, the light sensing component 2 may be a Schottky diode or a photoresistor, but the present application is not limited thereto.

[0043] Continue reading Figure 1 , the peripheral wall 3 is connected to the substrate 1, and the peripheral wall 3 and the substrate 1 form a containing space 4, and a plurality of metal pads 10 and the light sensing component 2 are located in the containing space 4. The first reflective material layer 5 is also disposed in the containing space 4. It should be noted that, although the figures shown in the present application are plan views, in fact, the light sensor structure M provided in the present application is a three-dimensional structure. Therefore, the first reflective material layer 5 actually surrounds the light sensing component 2. Preferably, the upper surface 20 of the light sensing component 2 is not covered by the first reflective material layer 5, but is completely exposed in the containing space 4. However, in other embodiments not shown, the first reflective material layer 5 will cover part of the upper surface 20 of the light sensing component 2. Such forms all fall within the scope of the present application.

[0044] In addition, the optical sensor structure M of the present application further includes a lens assembly 7, which is stacked on the peripheral wall 3. Deep ultraviolet light (Deep UV) is incident into the interior of the optical sensor structure M through the lens assembly 7 and is received by the optical sensing component 2. It should be noted that for short-wavelength deep ultraviolet light (Deep UV), when it is incident into the interior of the optical sensor structure M from the external environment, it is mainly received by the upper surface 20 of the optical sensing component 2.

[0045] Continue reading Figure 1 , the first reverse side material layer 5 is not only arranged around the light sensing component 2, but also the first reverse side material layer 5 is inclined upward from the light sensing component 2 toward the outer peripheral wall 3. For example, the matrix of the first reflective material layer 5 is silicone (Silicone) or fluoropolymer (Fluoropolymer). However, the present application is not limited to the above examples. The first reflective material layer 5 surrounds the light sensing component 2 to form a reflective structure (Reflection Around Chip). When the external light L enters the accommodating space 4, in addition to directly entering the upper surface 20 of the light sensing component 2, other light L that cannot directly enter the light sensing component 2 will be reflected by the first reflective material layer 5 (such as Figure 1 The light sensor structure M provided by the present application can increase the amount of light incident on the light sensor component 2 by the reflection of the first reflective material layer 5, thereby increasing the generated photocurrent.

[0046] Furthermore, the first reflective material layer 5 includes a doping material 50. For example, the doping material 50 is selected from one or more of the following groups: polytetrafluoroethylene (PTFE), fluorinated ethylene propylene (FEP), polyfluoroalkoxy (PFA), ethylene-tetrafluoroethylene (ETFE) and zirconium dioxide. However, the present application is not limited to the above examples.

[0047] In the present application, the weight percentage of the doping material 50 in the first reflective material layer 5 is 30% to 50%. However, different doping materials 50 may have different weight percentages in the first reflective material layer 5. Preferably, the weight percentage of the doping material 50 in the first reflective material layer 5 is 30% to 70%.

[0048] Second embodiment

[0049] See also Figure 2 As shown, the difference between the second embodiment and the first embodiment is that the optical sensor structure M provided in the second embodiment of the present application further includes a base layer 6, and other component structures of the optical sensor structure M provided in the second embodiment are similar to those of the aforementioned first embodiment, which will not be repeated here.

[0050] As described above, the optical sensor structure M includes a substrate 1, an optical sensing component 2, a peripheral wall 3, a first reflective material layer 5, a base layer 6 and a lens component 7. The substrate 1 includes a plurality of metal pads 10. The optical sensing component 2 is disposed on the substrate 1 and is electrically connected to the plurality of metal pads 10. The peripheral wall 3 is connected to the substrate 1, and the peripheral wall 3 and the substrate 1 form a receiving space 4. The plurality of metal pads 10 and the optical sensing component 2 are located in the receiving space 4, and the first reflective material layer 5 is also located in the receiving space 4. The first reflective material layer 5 surrounds the optical sensing component 2, and the upper surface 20 of the optical sensing component 2 is not covered by the first reflective material layer 5, but is exposed in the receiving space 4. The lens component 7 is stacked on the peripheral wall 3. The base layer 6 is disposed in the receiving space 4 and surrounds the optical sensing component 2, and the base layer 6 is located below the first reflective material layer 5. In other words, the base layer 6 is located between the first reflective material layer 5 and the substrate 1. In addition, it should be noted that the contact surface S between the base layer 6 and the first reflective material layer 5 is not higher than the upper surface 20 of the light sensing component 2 .

[0051] The base layer 6 is located between the first reflective material layer 5 and the substrate 1. The base layer 6 is mainly used to support the first reflective material layer 5 to prevent the doping material 50 inside the first reflective material layer 5 from sinking when the first reflective material layer 5 is solidified. The constituent material of the base layer 6 can be the same as the constituent material of the first reflective material layer 5, or can be different from the constituent material of the first reflective material layer 5. For example, the base layer 6 is selected from the following group: silicone, fluoropolymer, polytetrafluoroethylene, perfluoroethylene propylene copolymer, polyfluoroalkoxy, ethylene-tetra-fluoroethylene copolymer, and any combination thereof. However, the present application is not limited to the above examples.

[0052] Third embodiment

[0053] See also Figure 1 , Figure 3A and Figure 3BAs shown, the difference between the third embodiment and the aforementioned first embodiment lies in that, in the light sensor structure M provided in the third embodiment of the present application, the light sensing component 2 is rotated along the surface of the substrate 1 by a rotation angle Ө, and the other component structures of the light sensor structure M provided in the second embodiment are similar to those of the aforementioned embodiment and are not described again herein.

[0054] As described above, the optical sensor structure M includes a substrate 1, an optical sensing component 2, a peripheral wall 3 and a first reflective material layer 5. The substrate 1 includes a plurality of metal pads 10. The optical sensing component 2 is disposed on the substrate 1 and is electrically connected to the plurality of metal pads 10. The peripheral wall 3 is connected to the substrate 1, and the peripheral wall 3 and the substrate 1 form a receiving space 4. The plurality of metal pads 10 and the optical sensing component 2 are located in the receiving space 4, and the first reflective material layer 5 is also disposed in the receiving space 4. The first reflective material layer 5 surrounds the optical sensing component 2, and the upper surface 20 of the optical sensing component 2 is not covered by the first reflective material layer 5, but is exposed in the receiving space 4.

[0055] As a comparison, Figure 3A is a schematic top view of the optical sensor structure of the first embodiment, Figure 3B FIG. 1 is a top view of a light sensor structure according to a third embodiment of the present application. Figure 3B It can be seen that in the optical sensor structure M of the third embodiment of the present application, the optical sensing component 2 is rotated along the surface of the substrate 1 by a rotation angle Ө. For example, an axis A is defined in the center of the substrate 1, and another axis B is defined in the middle of the optical sensing component 2, and the axis A and the axis B are separated by an angle Ө (i.e., the rotation angle Ө). In the first embodiment, the axis A and the axis B overlap each other, and the rotation angle Ө is 0 degrees, that is, the optical sensing component 2 does not rotate relative to the substrate 1. In the third embodiment, the angle Ө between the axis A and the axis B can be between 40 and 50 degrees, that is, the optical sensing component 2 rotates 40 to 50 degrees relative to the substrate 1.

[0056] In another preferred embodiment of the present application, the rotation angle Ө can be 45 degrees. Compared with the first embodiment in which the light sensing component 2 does not rotate relative to the substrate 1, when the rotation angle Ө of the light sensing component 2 in the third embodiment is 45 degrees, the light current that the light sensing component 2 in the third embodiment can receive can be further increased by more than 2% compared with the light sensing component 2 in the first embodiment.

[0057] Fourth embodiment

[0058] See also Figure 4As shown, the difference between the fourth embodiment and the aforementioned first embodiment is that the structure of the lens component 7 of the optical sensor structure M provided in the fourth embodiment of the present application is different. In the aforementioned first embodiment, the lens component 7 of the optical sensor structure M is a plane mirror, but in the fourth embodiment, the lens component 7 of the optical sensor structure M is a plano-convex lens. Therefore, one surface 71 of the lens component 7 is a convex surface, and the other surface 72 is a plane. In this embodiment, the surface 71 (convex surface) of the lens component 7 faces the optical sensing component 2, and the surface 72 (plane) faces away from the optical sensing component 2. Thereby, the lens component 7 can reduce the total reflection angle of the light incident on the interior of the optical sensing structure M, and can enhance the focusing effect, that is, increase the amount of light directly incident on the upper surface 21 of the optical sensing component 2, thereby enhancing the generated photocurrent.

[0059] Based on the above, the optical sensor structure M provided in the fourth embodiment of the present application includes a substrate 1, an optical sensing component 2, a peripheral wall 3, a first reflective material layer 5 and a lens component 7 (a plano-convex lens). The substrate 1 includes a plurality of metal pads 10. The optical sensing component 2 is disposed on the substrate 1 and is electrically connected to the plurality of metal pads 10. The peripheral wall 3 is connected to the substrate 1, and the peripheral wall 3 and the substrate 1 form a receiving space 4. The plurality of metal pads 10 and the optical sensing component 2 are located in the receiving space 4, and the first reflective material layer 5 is also disposed in the receiving space 4. The first reflective material layer 5 surrounds the optical sensing component 2, and the upper surface 20 of the optical sensing component 2 is not covered by the first reflective material layer 5, but is exposed in the receiving space 4. The lens component 7 is stacked on the peripheral wall 3.

[0060] In addition, in the lens component 7, a surface 71 facing the light sensing component 2 and a surface 72 facing away from the light sensing component 2 are coated with an anti-reflection layer 8 respectively. The anti-reflection layer 8 can be an anti-reflection coating (ARC). The anti-reflection coating is a surface optical coating that can increase the transmittance by reducing the reflection of light. In other words, the anti-reflection coating reduces the scattered light generated by the lens component 7. For example, the composition material of the anti-reflection film includes a combination of tantalum pentoxide and silicon dioxide or a combination of hafnium dioxide and silicon dioxide. Furthermore, the components of the aforementioned combination of the anti-reflection film are stacked on each other to form.

[0061] When external light passes through the lens assembly 7 and enters the accommodation space 4, some of the light will be totally reflected and will not enter the accommodation space 4. Therefore, the anti-reflection layer 8 can reduce the total reflection generated when the light passes through the lens assembly 7, and increase the amount of light incident to the accommodation space 4 when passing through the lens assembly 7. In other words, the anti-reflection layer 8 can reduce the total reflection angle of the external incident light. Once the part of the external light incident to the accommodation space 4 when passing through the lens assembly 7 is increased, the internal light sensing component 2 can generate more photocurrent.

[0062] Fifth embodiment

[0063] See also Figure 5 As shown, the difference between the fifth embodiment and the aforementioned first embodiment and fourth embodiment is that the optical sensor structure M provided in the fifth embodiment of the present application has a different structure of the lens component 7. In this embodiment, the lens component 7 is a convex-concave lens. Therefore, one surface 71 of the lens component 7 is a convex surface, and the other surface 72 is a concave surface. The surface 71 (convex surface) of the convex-concave lens faces the optical sensing component 2, and the surface 72 (concave surface) faces away from the optical sensing component 2, and the surface 71 (convex surface) and the surface 72 (concave surface) are respectively coated with a layer of anti-reflection layer 8.

[0064] When the external light passes through the lens assembly 7 and enters the accommodation space 4, some of the light will be totally reflected and will not enter the accommodation space 4. Therefore, the convex-concave lens can reduce the total reflection portion of the external light passing through the lens assembly 7, and increase the portion of the light entering the accommodation space 4 when passing through the lens assembly 7. In other words, the convex-concave lens can reduce the total reflection angle of the external incident light. Once the portion of the external light passing through the lens assembly 7 and entering the accommodation space 4 is increased, the internal light sensing component 2 can generate more photocurrent.

[0065] For example, the material of the lens assembly 7 includes quartz, fluoropolymer or sapphire. In addition to the plane mirror, plano-convex lens and convex-concave lens mentioned above, the shape of the lens assembly 7 can also be a spherical lens (dome lens) or a Fresnel lens. In other words, the present application is not limited to the material and shape of the lens assembly 7. The above example is only one possible embodiment and is not intended to limit the present application.

[0066] For example, the optical sensor structure M of the fifth embodiment of the present application includes a substrate 1, an optical sensing component 2, a peripheral wall 3, a first reflective material layer 5, a base layer 6 and a lens component 7 (convex-concave lens). The substrate 1 includes a plurality of metal pads 10. The optical sensing component 2 is disposed on the substrate 1 and is electrically connected to the plurality of metal pads 10. The peripheral wall 3 is connected to the substrate 1, and the peripheral wall 3 and the substrate 1 form a receiving space 4. The plurality of metal pads 10 and the optical sensing component 2 are located in the receiving space 4, and the first reflective material layer 5 is also disposed in the receiving space 4. The first reflective material layer 5 surrounds the optical sensing component 2, and the upper surface 20 of the optical sensing component 2 is not covered by the first reflective material layer 5, but is exposed in the receiving space 4. The lens component 7 is stacked on the peripheral wall 3. The base layer 6 is disposed in the receiving space 4 and surrounds the optical sensing component 2, and the base layer 6 is located below the first reflective material layer 5. In the lens component 7, a surface 71 facing the optical sensing component 2 and a surface 72 facing away from the optical sensing component 2 are coated with an anti-reflection layer 8.

[0067] In addition, a thin film 21 is coated on the upper surface 20 of the optical sensing component 2, and the thin film 21 is silicone or fluoropolymer. It is worth mentioning that the refractive index of the thin film 21 is smaller than the refractive index of the optical sensing component 2, and the refractive index of the thin film 21 is greater than the refractive index of air (n=1). When light is incident on the upper surface 20 of the optical sensing component 2, the light will first pass through the air and the thin film 21 in sequence before contacting the upper surface 20 of the optical sensing component 2. In other words, the light will have different refractive index gradients on the path of incident on the upper surface 20 of the optical sensing component 2. In this way, the total reflection of the light can be reduced, the amount of light incident on the upper surface 20 of the optical sensing component 2 can be increased, and the generated photocurrent can be improved.

[0068] Sixth embodiment

[0069] See also Figure 6 As shown, the sixth embodiment is different from the first embodiment in that the optical sensor structure M provided in the sixth embodiment of the present application further includes a resistor component 9. The other component structures of the optical sensor structure M provided in the sixth embodiment are similar to those of the previous embodiment and will not be described again.

[0070] Based on the above, the optical sensor structure M of the sixth embodiment of the present application includes a substrate 1, an optical sensing component 2, a peripheral wall 3, a first reflective material layer 5, a lens component 7 and a resistor component 9. The substrate 1 includes a plurality of metal pads 10. The optical sensing component 2 is disposed on the substrate 1 and is electrically connected to the plurality of metal pads 10. The peripheral wall 3 is connected to the substrate 1, and the peripheral wall 3 and the substrate 1 form a receiving space 4. The plurality of metal pads 10 and the optical sensing component 2 are located in the receiving space 4, and the first reflective material layer 5 is also disposed in the receiving space 4. The first reflective material layer 5 surrounds the optical sensing component 2, and the upper surface 20 of the optical sensing component 2 is not covered by the first reflective material layer 5, but is exposed in the receiving space 4. The lens component 7 is stacked on the peripheral wall 3. The resistor component 9 is disposed on the substrate 1 and is electrically connected to the optical sensing component 2, and the first reflective material layer 5 covers the resistor component 9. It is worth mentioning that the resistor component 9 is connected in parallel with the optical sensing component 2 to form a parallel resistor.

[0071] Seventh embodiment

[0072] See also Figure 7 As shown, the difference between the seventh embodiment and the sixth embodiment is that the light sensing element 2 of the light sensor structure M provided in the seventh embodiment of the present application is stacked on the resistor element 9. The other component structures of the light sensor structure M provided in the seventh embodiment are similar to those of the previous embodiments and will not be repeated here.

[0073] Based on the above, the optical sensor structure M of the seventh embodiment of the present application includes a substrate 1, an optical sensing component 2, a peripheral wall 3, a first reflective material layer 5, a lens component 7 and a resistor component 9. The substrate 1 includes a plurality of metal pads 10. The optical sensing component 2 is disposed on the substrate 1 and is electrically connected to the plurality of metal pads 10. The peripheral wall 3 is connected to the substrate 1, and the peripheral wall 3 and the substrate 1 form a receiving space 4. The plurality of metal pads 10 and the optical sensing component 2 are located in the receiving space 4, and the first reflective material layer 5 is also disposed in the receiving space 4. The first reflective material layer 5 surrounds the optical sensing component 2, and the upper surface 20 of the optical sensing component 2 is not covered by the first reflective material layer 5, but is exposed in the receiving space 4. The lens component 7 is stacked on the peripheral wall 3. The resistor component 9 is disposed on the substrate 1, and the optical sensing component 2 is stacked on the resistor component 9. The resistor component 9 is electrically connected to the optical sensing component 2 and is connected in parallel with the optical sensing component 2 to form a parallel resistor. The first reflective material layer 5 covers the resistor component 9.

[0074] In the sixth and seventh embodiments, the resistor component 9 can reduce the response time of the optical sensor structure M, especially the rise time (Tr) in the response time. The response time is the sum of Tr (Time Rising) and Tf (Time Falling), Tr represents the time required for the photocurrent generated by the optical sensor structure M to rise from 10% to 90%, and Tf represents the time required for the photocurrent to fall from 90% to 10%. In this embodiment, after adding the parallel resistor (resistor component 9), the rise time (Tr) can be shortened, that is, the overall response speed of the optical sensor structure M can be faster. In one of the preferred embodiments of the present application, the parallel resistor (resistor component 9) is in the range of 100K~10M ohms. As shown in Table 1 below, Table 1 shows the percentage (%) of the rise time Tr with the addition of parallel resistors of different sizes to the rise time Tr without the addition of parallel resistors. It can be seen from Table 1 that the shortening ratio of the rise time (Tr) under different values ​​of the parallel resistor (resistor component 9), in one of the best embodiments of the present application, the parallel resistor (resistor component 9) is 1M ohm. When the parallel resistance is 1M ohm, the rise time (Tr) can be reduced by about 30%.

[0075] Table 1

[0076]

[0077] In addition, it should be noted that the above-mentioned embodiments are only used to illustrate different implementation modes of the present application, and are not used to limit the present application. Therefore, the various component structures described in the embodiments can also be adjusted and matched.

[0078] For example, in another embodiment not shown in the drawings of the present application, the optical sensor structure M includes a substrate 1, an optical sensing component 2, a peripheral wall 3, a first reflective material layer 5, a base layer 6, a lens component 7 and a resistor component 9. The substrate 1 includes a plurality of metal pads 10. The optical sensing component 2 is disposed on the substrate 1 and is electrically connected to the plurality of metal pads 10. The peripheral wall 3 is connected to the substrate 1, and the peripheral wall 3 and the substrate 1 form a receiving space 4. The plurality of metal pads 10 and the optical sensing component 2 are located in the receiving space 4, and the first reflective material layer 5 is also disposed in the receiving space 4. The first reflective material layer 5 surrounds the optical sensing component 2, and the upper surface 20 of the optical sensing component 2 is not covered by the first reflective material layer 5, but is exposed in the receiving space 4. The lens component 7 is stacked on the peripheral wall 3. The base layer 6 is disposed in the receiving space 4 and surrounds the optical sensing component 2, and the base layer 6 is located below the first reflective material layer 5. A surface 72 of the lens component 7 facing away from the optical sensing component 2 is coated with an anti-reflection layer 8. A thin film 21 is coated on the upper surface 20 of the optical sensing element 2 .

[0079] However, the above example is only one feasible implementation example and is not intended to limit the present application.

[0080] Advantageous Effects of Embodiments

[0081] One of the beneficial effects of the present application is that the light sensor structure M provided by the present application can increase the amount of light incident on the light sensing component 2 in the light sensor structure M through the technical solution of "a first reflective material layer is set in the accommodating space, and the first reflective material layer surrounds the light sensing component", thereby increasing the photocurrent generated by the light sensing component 2.

[0082] Furthermore, the optical sensor structure M provided in the present application can further reduce the response time and improve the response speed of the optical sensor structure M by setting a resistor component 9 in parallel with the optical sensing component 2 to form a parallel resistor.

[0083] The contents disclosed above are only preferred feasible embodiments of the present application, and are not intended to limit the protection scope of the claims of the present application. Therefore, all equivalent technical changes made using the contents of the present application specification and drawings are included in the protection scope of the claims of the present application.

Claims

1. A light sensor structure, characterized in that: The optical sensor structure comprises: a substrate including a plurality of metal pads; a light sensing component, disposed on the substrate and electrically connected to the plurality of metal pads, the light sensing component being used to sense deep ultraviolet light; an outer peripheral wall connected to the substrate, wherein the outer peripheral wall and the substrate form a containing space, and the metal pad and the light sensing component are located in the containing space; and a first reflective material layer disposed in the accommodating space, wherein the first reflective material layer comprises a doping material, wherein the doping material comprises one or more of the following groups: polytetrafluoroethylene, perfluoroethylene-propylene copolymer, perfluoroalkyl compound, and ethylene-tetrafluoroethylene copolymer; The first reflective material layer surrounds the light sensing component and directly contacts the side surface of the light sensing component, and the first reflective material layer is inclined upward from the light sensing component toward the outer peripheral wall.

2. The optical sensor structure according to claim 1, characterized in that: The light sensing component is a Schottky diode or a photoresistor.

3. The optical sensor structure according to claim 1, characterized in that: The upper surface of the optical sensing component is coated with a thin film, and the refractive index of the thin film is smaller than the refractive index of the optical sensing component.

4. The optical sensor structure according to claim 3, characterized in that: The film is silicone or fluoropolymer.

5. The optical sensor structure according to claim 1, characterized in that: The first reflective material layer includes silicone or fluoropolymer.

6. The optical sensor structure according to claim 1, characterized in that: The weight percentage of the doping material in the first reflective material layer is 30% to 70%.

7. The optical sensor structure according to claim 1, characterized in that: The optical sensing component rotates along the surface of the substrate by a rotation angle.

8. The optical sensor structure according to claim 7, characterized in that: The rotation angle is between 40 and 50 degrees.

9. The optical sensor structure according to claim 1, characterized in that: The optical sensor structure further includes a base layer, which is disposed in the accommodating space and surrounds the optical sensing component, and the base layer is located below the first reflective material layer.

10. The optical sensor structure according to claim 9, characterized in that: The base layer is selected from the following group: silicone, fluoropolymer, polytetrafluoroethylene, perfluoroethylene-propylene copolymer, perfluoroalkyl compound, ethylene-tetrafluoroethylene copolymer and any combination thereof.

11. The optical sensor structure according to claim 9, characterized in that: The contact surface between the base layer and the first reflective material layer is not higher than the upper surface of the light sensing component.

12. The optical sensor structure according to claim 1, characterized in that: The optical sensor structure further includes: a lens assembly, which is stacked on the outer wall.

13. The optical sensor structure according to claim 12, characterized in that: The lens assembly is coated with an antireflection layer.

14. The optical sensor structure according to claim 1, characterized in that: The optical sensor structure further includes: a resistor component, which is electrically connected to the optical sensing component.

15. The optical sensor structure according to claim 14, characterized in that: The first reflective material layer covers the resistor component.

16. The optical sensor structure according to claim 15, characterized in that: The resistor component is disposed on the substrate and is connected in parallel with the light sensing component.

17. The optical sensor structure according to claim 14, characterized in that: The resistor component is disposed on the substrate, and the light sensing component is stacked on the resistor component, and the resistor component and the light sensing component are connected in parallel.

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