Light emitting diode structure and manufacturing method thereof

Abstract

The present invention provides a light-emitting diode structure and a method for manufacturing the light-emitting diode structure. The light-emitting diode structure includes a semiconductor stack layer. The semiconductor stack layer includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is configured on the first-type semiconductor layer, and the second-type semiconductor layer is configured on the active layer. The sidewall of any side of the semiconductor stack layer includes a rough surface.

Description

Technical Field

[0001] The invention relates to a photoelectric element and a manufacturing method thereof, and in particular to a light emitting diode structure and a manufacturing method thereof. Background Art

[0002] In a general LED manufacturing process, the epitaxial layer is etched into multiple independent LED structures by photolithography. However, the photolithography process (such as dry etching process) will produce lattice defects on the sidewalls of the semiconductor stack layer of the LED, causing electrons and holes to recombine at the aforementioned defects when the LED is in use, resulting in edge leakage, which is the so-called side wall effect.

[0003] When the size of the LED chip is large, the sidewall effect has little effect on the luminous efficiency, because the ratio of the sidewall area of ​​the LED chip to the area of ​​the light-emitting layer is relatively small. However, for micro-light-emitting diode (micro-LED) chips, since the area of ​​the light-emitting layer is very small, the ratio of the sidewall area of ​​the micro-light-emitting diode chip to the area of ​​the light-emitting layer becomes larger, and the sidewall effect becomes significant, which greatly affects the luminous efficiency of the micro-light-emitting diode chip. Summary of the invention

[0004] The present invention is directed to a light emitting diode structure having better light emitting efficiency.

[0005] The present invention is directed to a method for manufacturing a light emitting diode structure, which can effectively improve the light emitting efficiency of the light emitting diode structure.

[0006] An embodiment of the present invention provides a light emitting diode structure, including a semiconductor stack layer. The semiconductor stack layer includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is disposed on the first-type semiconductor layer, and the second-type semiconductor layer is disposed on the active layer. The sidewall of any side of the semiconductor stack layer includes a rough surface.

[0007] The sidewall of the semiconductor stack layer has a plurality of oblique edges on a longitudinal section perpendicular to the active layer, the absolute value of the slope of each of the plurality of oblique edges relative to the active layer is less than 1.8, and the plurality of oblique edges have a variety of different slopes.

[0008] One embodiment of the present invention provides a method for manufacturing a light-emitting diode structure, comprising: growing a semiconductor stack layer on a first substrate, wherein the semiconductor stack layer is divided into a first part and a second part, and includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer sequentially grown on the first substrate; and providing a force application means to physically disconnect the first part and the second part from each other, wherein the first part includes a plurality of light-emitting diode structures separated from each other.

[0009] In the light-emitting diode structure of the embodiment of the present invention, the sidewall on either side of the semiconductor stack layer includes a rough surface, that is, the sidewall includes a portion that is not generated by etching, that is, the rough surface is generated by the disconnection of the semiconductor stack layer. In this way, the sidewall effect caused by etching can be effectively avoided, so the luminous efficiency and brightness of the light-emitting diode structure can be effectively improved. In the manufacturing method of the light-emitting diode structure of the embodiment of the present invention, a force is used to physically disconnect the first part and the second part of the semiconductor stack layer, wherein the first part includes a plurality of light-emitting diode structures separated from each other. Therefore, the sidewall of the light-emitting diode structure includes a portion that is not generated by etching, that is, a portion generated by disconnection. In this way, the sidewall effect caused by etching can be effectively avoided, so the luminous efficiency and brightness of the light-emitting diode structure can be effectively improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figures 1A to 1D is a cross-sectional schematic diagram for illustrating the process of a method for manufacturing a light emitting diode structure according to an embodiment of the present invention;

[0011] Figure 1E for Figure 1D Another variation of the embodiment;

[0012] Figure 2A Reason Figures 1A to 1D The light emitting diode structure is manufactured by the steps of:

[0013] Figure 2B for Figure 2A A light emitting diode structure of another variation of the embodiment;

[0014] FIG. 3A to FIG. 3D is a cross-sectional schematic diagram for illustrating the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention;

[0015] Figure 4 Reason FIG. 3A to FIG. 3D The light emitting diode structure is manufactured by the steps of:

[0016] FIG. 5A to FIG. 5C is a cross-sectional schematic diagram for illustrating the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention;

[0017] FIG. 6A to FIG. 6B is a cross-sectional schematic diagram for illustrating the process of a method for manufacturing a light emitting diode structure according to yet another embodiment of the present invention;

[0018] Figure 7 is a cross-sectional schematic diagram of a light emitting diode structure according to an embodiment of the present invention;

[0019] FIG. 8A to FIG. 8C is a cross-sectional schematic diagram for illustrating the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention;

[0020] 9A to 9C is a cross-sectional schematic diagram for illustrating the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention;

[0021] Fig.10 To show Fig. 9A A cross-sectional schematic diagram of another variation of a step of a method for manufacturing a light emitting diode structure. DETAILED DESCRIPTION

[0022] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0023] Figures 1A to 1D FIG. 1 is a cross-sectional diagram showing the process of a method for manufacturing a light emitting diode structure according to an embodiment of the present invention. Figures 1A to 1D The method for manufacturing the light emitting diode structure of this embodiment includes the following steps. First, please refer to Figure 1A , a semiconductor stack layer 200 is grown on the first substrate 110, wherein the semiconductor stack layer 200 includes a first-type semiconductor layer 210, an active layer 220, and a second-type semiconductor layer 230 sequentially grown on the first substrate 110. In the present embodiment, the first-type semiconductor layer 210 is, for example, an N-type semiconductor layer, and the second-type semiconductor layer 230 is, for example, a P-type semiconductor layer. However, in other embodiments, the first-type semiconductor layer 210 may be a P-type semiconductor layer, and the second-type semiconductor layer 230 may be an N-type semiconductor layer. The active layer 220 is a light-emitting layer, which is, for example, a quantum well layer or a multiple quantum well layer. In addition, an electrode 120 may also be formed on the second-type semiconductor layer 230.

[0024] The first semiconductor layer 210, the active layer 220 and the second semiconductor layer 230 can be made of GaN-based semiconductor materials, GaAs-based semiconductor materials or other appropriate semiconductor layer materials, and the corresponding materials are selected depending on the requirements of the light emission wavelength of the active layer 220. The first substrate 110 can be a sapphire substrate, a GaN substrate, a GaAs substrate or a substrate of other appropriate materials.

[0025] Next, in this embodiment, please refer to Figure 1B The semiconductor stack layer 200 is divided into a first portion P1 and a second portion P2. The patterned adhesive 130 is used to pattern the first portion P1 or the second portion P2 (in Figure 1B The first portion P1 is taken as an example in the figure) and is pasted on the second substrate 310, and the semiconductor stack layer 200 is located between the first substrate 110 and the second substrate 310. Then, a patterned shielding layer 50 is formed below the second portion P2 of the semiconductor stack layer 200, and a laser 60 is irradiated through the opening 52 of the patterned shielding layer 50 at the junction of the first portion P1 and the first substrate 110 to reduce the bonding force between the first portion P1 and the first substrate 110, that is, a laser lift-off process is performed to form a gap G at the junction of the first portion P1 and the first substrate 110, as shown in FIG. Figure 1C Shown.

[0026] Afterwards, please refer to Figure 1D Since the bonding force between the first portion P1 and the first substrate 110 is weakened or the two are completely separated, and the contact area between the first portion P1 and the second portion P2 is smaller than the longitudinal section area of ​​the second portion P2, a force application means (such as tension or pressure) can be provided to apply to the first portion P1 and the second portion P2. At this time, the stress will be concentrated at the junction between the two, so that the first portion P1 and the second portion P2 are physically disconnected from each other (at Figure 1D In an example, a pulling force is used, wherein the first portion P1 includes a plurality of light emitting diode structures 100 separated from each other. In this embodiment, for example, the second substrate 310 is moved away from the first substrate 110 to separate the first portion P1 from the second portion P2.

[0027] exist Figures 1A to 1DIn the process, the sidewall of the light-emitting diode structure 100 is not produced by etching (such as dry etching), but by using a force means (tension or pressure) to disconnect the first part P1 and the second part P2 of the semiconductor stack layer 200 from each other. In this way, the sidewall effect caused by etching can be effectively avoided, so the non-luminescent recombination or leakage of electrons and holes in the light-emitting diode structure 100 can be effectively suppressed, so that the luminous efficiency and brightness of the light-emitting diode structure 100 can be effectively improved. In addition, the remaining second part P2 can also be used in subsequent processes to produce other light-emitting diode structures, so as to achieve the effect of fully utilizing materials and maximize the utilization of the wafer area without causing waste of materials like when using an etching process. The first part P1 can continue to undergo other processes to add electrodes electrically connected to the first-type semiconductor layer 210, thereby completing the light-emitting diode element. In addition, the patterned adhesive 130 is used to graphically define the first portion P1 and the second portion P2. When the first portion P1 and the second portion P2 are disconnected from each other in a subsequent process, a chip can be obtained. Therefore, such a process has relatively simple steps.

[0028] Figure 2A Reason Figures 1A to 1D The steps to manufacture the completed light-emitting diode structure. Please refer to Figure 2A The light emitting diode structure 100 of this embodiment is Figures 1A to 1D The light emitting diode structure 100 manufactured by the steps includes a semiconductor stack layer 200. The semiconductor stack layer 200 includes a first-type semiconductor layer 210, an active layer 220 and a second-type semiconductor layer 230. The active layer 220 is configured on the first-type semiconductor layer 210, and the second-type semiconductor layer 230 is configured on the active layer 220. Among them, the side wall S1 on any side of the semiconductor stack layer 200 includes a rough surface RF, and this side wall S1 is a physical section. The physical section refers to a section that is not formed by etching, but a section formed by disconnecting the first part P1 and the second part P2 from each other by applying force (such as tension or pressure). For example, the side wall S1 on any side of the semiconductor stack layer 200 is perpendicular to the longitudinal section of the active layer 220 (for example, Figure 2A) has multiple sections of hypotenuse 202, and the absolute value of the slope of each section of the multiple hypotenuse 202 relative to the active layer 220 is less than 1.8, preferably less than 1.5, and more preferably less than 1.2. The absolute value of the slope of the hypotenuse 202 is, for example, a value obtained by dividing the height of the hypotenuse 202 in the z direction by the width of the hypotenuse 202 in the x direction. In another direction, the absolute value of the slope of the hypotenuse 202 is, for example, a value obtained by dividing the height of the hypotenuse 202 in the z direction by the width of the hypotenuse 202 in the y direction. In the present embodiment, the z direction is a direction perpendicular to the active layer 220, and the x direction and the y direction are, for example, two directions parallel to the active layer 220, wherein the x direction may be perpendicular to the y direction. In addition, the multiple sections of the hypotenuse 202 have a variety of different slopes, and may have positive slopes and negative slopes. The LED structure 100 has the characteristics of multiple oblique edges 202 that meet the above conditions, and the multiple oblique edges 202 are the natural result of the first portion P1 and the second portion P2 being disconnected from each other, that is, the multiple oblique edges 202 are not generated by etching (such as dry etching). In this embodiment, the multiple oblique edges 202 can be sawtooth-shaped.

[0029] In the present embodiment, the maximum width of the active layer of the light-emitting diode structure 100 (for example, the maximum width perpendicular to the z direction) is less than or equal to 50 microns (micron, μm), for example, 30 μm. That is, the light-emitting diode structure 100 can be a micro-light-emitting diode (micro-LED), and the suppression of the sidewall effect in the present embodiment can significantly improve the luminous efficiency and brightness of the micro-light-emitting diode. In the present embodiment, the root mean square roughness of the portion of the sidewall S1 of the semiconductor stack layer 200 having multiple bevels 202 can be between 150 nanometers (nanometer, nm) and 3 μm. In the current micro-light-emitting diode manufacturing process, most of them use graphic etching to define the boundary of the chip, and the root mean square roughness of the sidewall formed by the above process is usually less than 5nm. That is, through the manufacturing method of the light-emitting diode structure of the present embodiment, the sidewall S1 of the semiconductor stack layer 200 manufactured has a significantly rougher characteristic. In addition, in the present embodiment, each cross section of the semiconductor stack layer 200 is parallel to the active layer 220. In addition, in the present embodiment, the cross section with the largest cross-sectional area is not located at the topmost and bottommost of the semiconductor stack layer 200. The above features are natural results generated by the disconnection of the first portion P1 and the second portion P2.

[0030] exist Figure 1D and Figure 2A In the embodiment, the light emitting diode structure 100 is a vertical light emitting diode, but the present invention is not limited thereto. Figure 1E and Figure 2BAs shown, the LED structure 100b is a horizontal LED, that is, the two electrodes 122 and 124 are disposed on the same side of the semiconductor stack layer 200, wherein the electrode 122 is electrically connected to the first semiconductor layer 210, and the electrode 124 is electrically connected to the second semiconductor layer 230. The LED structure 100b can also be used as a flip-chip packaged LED in subsequent processes.

[0031] FIG. 3A to FIG. 3D FIG. 1 is a cross-sectional schematic diagram showing the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention. FIG. 3A to FIG. 3D The manufacturing method of the light emitting diode structure of this embodiment is Figures 1A to 1D The manufacturing method of the light emitting diode structure is similar to that of the embodiment, and the difference between the two is as follows. In the manufacturing method of the light emitting diode structure of the present embodiment, please first refer to Figure 3A Before the first portion P1 and the second portion P2 of the semiconductor stack layer 200 are disconnected from each other by applying a force (such as a pulling force or a pressing force), the first portion P1 or the second portion P2 is etched so that the longitudinal cross-sectional area of ​​the first portion P1 and the longitudinal cross-sectional area of ​​the second portion P2 are different from each other, and an etched sidewall E1 is formed in the semiconductor stack layer 300. For example, at least one of a portion of the first-type semiconductor layer 210 and a portion of the second-type semiconductor layer 230 of the second portion P2 can be selectively etched first ( Figure 3A The selective etching is performed by, for example, first selectively etching a portion of the second-type semiconductor layer 230 of the second portion P2. The selective etching is performed by, for example, photolithography, or dry etching, that is, a mask process is used to only etch the top of the second-type semiconductor layer 230 of the second portion P2, but the first portion P1 is not etched. The etched sidewall E1 is located at least one of the first-type semiconductor layer 210 and the second-type semiconductor layer 230 ( Figure 3A Take the second-type semiconductor layer 230 as an example).

[0032] In this embodiment, after selectively etching at least one of the first-type semiconductor layer 210 and the second-type semiconductor layer 230 of the second portion P2, an etched sidewall E1 is formed in the first portion P1. The etched sidewall E1 has a straight edge 204 on a longitudinal section perpendicular to the active layer 220. The absolute value of the slope of the straight edge 204 relative to the active layer 220 is greater than or equal to 3. Figure 3A The absolute value of the slope is, for example, infinite, that is, the straight edge 204 is perpendicular to the active layer 220 .

[0033] Then, if Figure 3B As shown, the first portion P1 of the semiconductor stack layer 200 is adhered to the second substrate 310 by using the patterned adhesive 130 , and a patterned shielding layer 50 is formed under the second portion P2 of the semiconductor stack layer 200 .

[0034] Preferably, if Figure 3C As shown, the laser 60 can also irradiate the junction between the first part P1 and the first substrate 110 through the opening 52 of the patterned shielding layer 50 to reduce the bonding force between the first part P1 and the first substrate 110, that is, perform a laser lift-off process to form a gap G at the junction of the first part P1 and the first substrate 110, thereby further reducing the contact area between the first part P1 and the second part P2.

[0035] Afterwards, if Figure 3D As shown, a force means (such as tension or pressure) is used to disconnect the first portion P1 and the second portion P2 of the semiconductor stack layer 200 from each other (at Figure 3D In an example, a pulling force is used, for example, the second substrate 310 is moved away from the first substrate 110 to separate the first portion P1 from the second portion P2. The first portion P1 thus formed includes a plurality of light emitting diode structures 100a separated from each other.

[0036] Figure 4 Reason FIG. 3A to FIG. 3D The steps to manufacture the completed light-emitting diode structure. Please refer to Figure 4 The light emitting diode structure 100a of this embodiment is FIG. 3A to FIG. 3D The light emitting diode structure 100a is manufactured by the steps of Figure 2A The light emitting diode structure 100a of the present embodiment is similar to the light emitting diode structure 100, and the differences between the two are as follows. In the light emitting diode structure 100a of the present embodiment, the sidewall S1a of the semiconductor stack layer 100a further has a straight edge 204 on a longitudinal section perpendicular to the active layer 220, and the absolute value of the slope of the straight edge 204 relative to the active layer 220 is greater than or equal to 3 ( Figure 4 The straight edge 204 is located on at least one of the sidewall of the first semiconductor layer 210 away from the active layer 220 and the sidewall of the second semiconductor layer 230 away from the active layer 220 (in Figure 4In the example, the straight edge 204 is located at the part of the side wall of the second-type semiconductor layer 230 away from the active layer 220. In addition, in the present embodiment, the multi-segment oblique edge 202 is at least located on the side wall of the active layer 220. That is to say, the side wall effect of the existing etching process mainly occurs on the side wall of the active layer, while the multi-segment oblique edge 202 of the present embodiment is at least located on the side wall of the active layer 220, so the side wall of the active layer 220 is still generated by the disconnection of the first part P1 and the second part P2 from each other, rather than being generated by etching, so the occurrence of the side wall effect can be effectively suppressed. Although the part of the side wall of the second-type semiconductor layer 230 away from the active layer is generated by the etching process, it is far away from the active layer 220 and is unlikely to enhance the side wall effect. Therefore, the semiconductor stack layer 100a still has a high luminous efficiency and brightness. In addition, since a part of the second-type semiconductor layer 230 of the second part P2 is etched in advance, it will be easier to disconnect the first part P1 and the second part P2 of the semiconductor stack layer 200 from each other by applying force means (such as tension or pressure). In this embodiment, the root mean square roughness of the straight edges 204 is smaller than the root mean square roughness of the oblique edges 202 .

[0037] In the present embodiment, the sidewalls of the first portion P1 (i.e., the light-emitting diode structure 100a) on either side of the disconnection have multiple oblique edges 202 on a longitudinal section perpendicular to the active layer 220, and the absolute value of the slope of each segment of the multiple oblique edges 202 relative to the active layer 220 is less than 1.8, preferably less than 1.5, and more preferably less than 1.2. In addition, the multiple oblique edges 202 have a variety of different slopes, such as positive slopes and negative slopes. In addition, the root mean square roughness of the sidewalls of the first portion P1 (i.e., the light-emitting diode structure 100a) at the disconnection is between 150nm and 3μm.

[0038] FIG. 5A to FIG. 5C FIG. 1 is a cross-sectional diagram showing the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention. FIG. 5A to FIG. 5C The manufacturing method of the light emitting diode structure of this embodiment is similar to that of 3A to Figure 3D The differences between the two are as follows. Figure 5A In this embodiment, the second portion P2 is adhered to the second substrate 310 by using the patterned adhesive 130, so that the semiconductor stack layer 200 is located between the first substrate 110 and the second substrate 310. In addition, in this embodiment, a patterned shielding layer 50 is formed under the first portion P1 of the semiconductor stack layer 200.

[0039] Next, please refer to Figure 5B, a laser 60 is used to irradiate the boundary between the second portion P2 and the first substrate 110 through the opening 52 of the patterned shielding layer 50 to reduce the bonding force between the second portion P2 and the first substrate 110, that is, a laser lift-off process is performed to form a gap G at the boundary between the second portion P2 and the first substrate 110.

[0040] Then, please refer to Figure 5C , using a force means (such as tension or pressure) to disconnect the first portion P1 and the second portion P2 of the semiconductor stack layer 200 from each other (at Figure 5C In an example, a pulling force is used, for example, to move the second substrate 310 away from the first substrate 110 to separate the first portion P1 from the second portion P2. The first portion P1 thus formed includes a plurality of light-emitting diode structures 100a separated from each other. In this embodiment, the plurality of light-emitting diode structures 100a remain on the first substrate 110.

[0041] FIG. 6A to FIG. 6B FIG. 1 is a cross-sectional schematic diagram for illustrating the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention. FIG. 3A to FIG. 3D The manufacturing method of the light emitting diode structure is similar to that of the embodiment, and the difference between the two is as follows. In this embodiment, after selectively etching the second type semiconductor layer 230 of the second portion P2, the second type semiconductor layer 230 is turned over. Figure 3A The first substrate 110 is formed by attaching the second type semiconductor layer 230 and the electrode 120 to the second substrate 310 using the adhesive 130', and then removing the first substrate 110. After that, the first type semiconductor layer 210 of the second portion P2 is selectively etched to form an etched sidewall E2 in the first portion P1. The etched sidewall E2 has a straight edge 206 on a longitudinal section perpendicular to the active layer 220. The absolute value of the slope of the straight edge 206 relative to the active layer 220 is greater than or equal to 3. Fig. 6A The absolute value of the slope is, for example, infinite, that is, the straight edge 206 is perpendicular to the active layer 220 .

[0042] Then, the first portion P1 of the semiconductor stack layer 200 is adhered to the third substrate 410 using the patterned adhesive 140. Figure 6B As shown, the third substrate 410 is moved away from the second substrate 310 to disconnect the first portion P1 from the second portion P2. In this way, the first portion P1 (i.e., the light emitting diode structure) formed has both etched sidewalls E1 and E2, that is, has both straight edges 204 and 206. In another embodiment, Fig. 6A In the previous steps, the second-type semiconductor layer 230 of the second portion P2 may not be selectively etched. Figure 6BThe light emitting diode structure formed after that has the etched sidewall E2 but not the etched sidewall E1, and has the straight edge 206 but not the straight edge 204, which is similar to Figure 7 The light emitting diode structure shown.

[0043] FIG. 8A to FIG. 8C FIG. 1 is a cross-sectional schematic diagram showing the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention. FIG. 8A to FIG. 8C The manufacturing method of the light emitting diode structure of this embodiment is similar to Figures 1A to 1D The manufacturing method of the light emitting diode structure of the embodiment is as follows. Figure 1A The semiconductor stack layer 200 is transferred from the first substrate 110 to the second substrate 310, such as Fig. 8A Specifically, the second-type semiconductor layer 230 and the electrode 120 can be attached to the second substrate 310 using the adhesive 150, and then the first substrate 110 can be removed, for example, by using a laser lift-off method. Figure 8B As shown, the semiconductor stack layer 200 is adhered to the third substrate 410 using the patterned adhesive 160, and the second substrate 310 is removed. In this embodiment, for example, the first portion P1 of the semiconductor stack layer 200 is adhered to the third substrate 410 using the patterned adhesive 160. However, in another embodiment, the second portion P2 of the semiconductor stack layer 200 may also be adhered to the third substrate 410 using the patterned adhesive 160.

[0044] Afterwards, if Figure 8C In this embodiment, the step of disconnecting the first portion P1 and the second portion P2 of the semiconductor stack layer 200 from each other by applying a force (such as pulling or pressing) includes providing a force (such as applying pulling or pressing) to the semiconductor stack layer 200 from a side of the semiconductor stack layer 200 away from the third substrate 410, so as to disconnect the first portion P1 and the second portion P2 from each other, wherein the position where the force (such as applying pulling or pressing) is provided is staggered with the pattern of the patterned adhesive 160. In this embodiment, a patterned substrate 510 may be provided, and the patterned substrate 510 has a plurality of patterned protrusions 512 staggered with the pattern of the patterned adhesive 160, and Figure 8CThe step further includes providing force-applying means (such as applying tension or pressure) to the patterned protrusions 512. Alternatively, in another embodiment, providing force-applying means (such as applying tension or pressure) to the semiconductor stack layer 200 is performed by applying pressure using liquid pressure. For example, in this embodiment, the patterned protrusions 512 of the patterned substrate 510 can be used to apply pressure to the second portion P2, or the second portion P2 can be applied using liquid pressure to disconnect the first portion P1 and the second portion P2 from each other. In this embodiment, the position of the patterned protrusions 512 corresponds to the position of the second portion P2, so that the first portion P1 and the second portion P2 can be disconnected from each other by applying pressure to the second portion P2 by the patterned protrusions 512. In another embodiment, when the second portion P2 of the semiconductor stack layer 200 is adhered to the third substrate 410 using the patterned adhesive 160, the position of the patterned protrusions 512 can correspond to the position of the first portion P1, and the first portion P1 and the second portion P2 can be disconnected from each other by applying pressure to the first portion P1 by the patterned protrusions 512.

[0045] In this embodiment, the patterned protrusions 512 are integrally formed with the patterned substrate 510 . However, in other embodiments, the patterned protrusions 512 may be glue coated on the patterned substrate 510 .

[0046] 9A to 9C FIG. 1 is a cross-sectional diagram showing the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention. 9A to 9C The manufacturing method of the light emitting diode structure of this embodiment is similar to Figures 1A to 1D The manufacturing method of the light emitting diode structure of the embodiment is as follows. In the manufacturing method of the light emitting diode structure of the embodiment, first, as Fig. 9A As shown, firstly, the patterned glue 130 is used to Figure 1A The first portion P1 of the semiconductor stack layer 200 is adhered to the second substrate 310. Then, the Figure 1A The first substrate 110 is removed by, for example, a laser lift-off process.

[0047] In this embodiment, at least one of a portion of the first-type semiconductor layer 210 and a portion of the second-type semiconductor layer 230 of the second portion P2 may be selectively etched first, and then Fig. 9A Taking the selective etching of part of the first-type semiconductor layer 210 in the second portion P2 as an example, the etching sidewall E2 and the straight edge 206 are formed in the first portion P1. Fig. 9A When the first portion P1 is attached to the second substrate 310, a portion of the second-type semiconductor layer 230 of the second portion P2 may also be etched. However, in other embodiments, the step of selectively etching the second portion P2 may not be performed. Alternatively, in another embodiment, as Fig.10 As shown, at least one of the first type semiconductor layer 210 and the second type semiconductor layer 230 of the first portion P1 may be selectively etched first, and then Fig.10 In the figure, the selective etching of the first portion P1 of the first-type semiconductor layer 210 is taken as an example.

[0048] Then, if Fig. 9B As shown, the second portion P2 is adhered to the third substrate 410 using the patterned adhesive 140. Fig. 9C , the second substrate 310 is moved away from the third substrate 410, so that the first portion P1 and the second portion P2 are disconnected from each other by a pulling force, so that the first portion P1 can form a light emitting diode structure.

[0049] In summary, in the light-emitting diode structure of the embodiment of the present invention, the sidewall on any side of the semiconductor stack layer includes a rough surface. In one embodiment, the sidewall on any side of the semiconductor stack layer has multiple oblique edges on a longitudinal section perpendicular to the active layer, and the absolute value of the slope of each segment of the multiple oblique edges relative to the active layer is less than 1.8. In other words, the sidewall includes a portion not generated by etching, that is, the multiple oblique edges are generated by the disconnection of the semiconductor stack layer. In this way, the sidewall effect caused by etching can be effectively avoided, so the non-luminescent recombination or leakage of electrons and holes in the light-emitting diode structure can be effectively suppressed, so that the luminous efficiency and brightness of the light-emitting diode structure can be effectively improved. In the method for manufacturing the light-emitting diode structure of the embodiment of the present invention, a force application means (such as using tension or pressure) is provided to disconnect the first part and the second part of the semiconductor stack layer from each other, wherein the first part includes a plurality of light-emitting diode structures separated from each other. Therefore, the sidewall of the light-emitting diode structure includes a portion not generated by etching, that is, a portion generated by disconnection. In this way, the sidewall effect caused by etching can be effectively avoided, so the luminous efficiency and brightness of the light-emitting diode structure can be effectively improved.

[0050] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode structure, characterized in that: include: Semiconductor stack layers, including: A first type semiconductor layer; an active layer, disposed on the first-type semiconductor layer; and A second type semiconductor layer is disposed on the active layer; The sidewall of any side of the semiconductor stack layer includes a rough surface, the sidewall of the semiconductor stack layer has a plurality of oblique edges on a longitudinal section perpendicular to the active layer, the absolute value of the slope of each of the plurality of oblique edges relative to the active layer is less than 1.8, and the plurality of oblique edges have a plurality of different slopes, wherein the light emitting diode structure is manufactured by a method for manufacturing a light emitting diode structure, and the method for manufacturing a light emitting diode structure includes: A semiconductor stacking layer in process of growing on a first substrate, wherein the semiconductor stacking layer in process is divided into a first portion and a second portion, and comprises a first-type semiconductor layer in process, an active layer in process, and a second-type semiconductor layer in process sequentially grown on the first substrate; Providing a force applying means to physically separate the first portion and the second portion from each other to form the rough surface, wherein the first portion includes a plurality of the light emitting diode structures separated from each other; Before providing the force applying means to disconnect the first part and the second part from each other, the first part or the second part is adhered to a second substrate using a patterned adhesive, and the semiconductor stacking layer in the process is located between the first substrate and the second substrate; and The second substrate is moved relative to the first substrate in a direction away from or close to each other, so that the first portion is separated from the second portion to form the semiconductor stacking layer.

2. The light emitting diode structure according to claim 1, characterized in that: The plurality of oblique edges are at least located on the side wall of the active layer.

3. The light emitting diode structure according to claim 1, characterized in that: The sidewall of the semiconductor stack layer is a physical section.

4. The light emitting diode structure according to claim 1, characterized in that: The side wall of the semiconductor stack layer also has a straight edge on a longitudinal section perpendicular to the active layer, the absolute value of the slope of the straight edge relative to the active layer is greater than or equal to 3, and the straight edge is located on at least one of a portion of the side wall of the first-type semiconductor layer away from the active layer and a portion of the side wall of the second-type semiconductor layer away from the active layer.

5. The light emitting diode structure according to claim 4, characterized in that: The root mean square roughness of the side wall at the straight edge is smaller than the root mean square roughness of the side wall at the plurality of inclined edges.

6. The light emitting diode structure according to claim 1, characterized in that: The root mean square roughness of the portion of the sidewall of the semiconductor stack layer having the multiple beveled edges is between 150 nm and 3 μm.

7. The light emitting diode structure according to claim 1, characterized in that: A cross section of the semiconductor stack layer having a maximum cross-sectional area is not located at the topmost and bottommost of the semiconductor stack layer.

8. A method for manufacturing a light emitting diode structure, characterized in that: include: Growing a semiconductor stack layer on a first substrate, wherein the semiconductor stack layer is divided into a first portion and a second portion, and comprises a first-type semiconductor layer, an active layer, and a second-type semiconductor layer sequentially grown on the first substrate; Providing a force application means to physically disconnect the first part and the second part from each other, wherein the first part includes a plurality of light emitting diode structures separated from each other; Before providing the force applying means to disconnect the first part and the second part from each other, the first part or the second part is adhered to the second substrate by using a patterned adhesive, and the semiconductor stack layer is located between the first substrate and the second substrate; as well as The second substrate is moved relative to the first substrate in a direction away from or close to each other, so that the first part is separated from the second part.

9. The method for manufacturing a light emitting diode structure according to claim 8, characterized in that: The force applying means is provided by applying tension or pressure.

10. The method for manufacturing a light emitting diode structure according to claim 8, characterized in that: The sidewall of the first portion on either side of the break has multiple oblique edges on a longitudinal section perpendicular to the active layer, the absolute value of the slope of each segment of the multiple oblique edges relative to the active layer is less than 1.8, and the multiple oblique edges have multiple different slopes.

11. The method for manufacturing a light emitting diode structure according to claim 10, characterized in that: The root mean square roughness of the sidewall of the first portion at the disconnection position is between 150 nm and 3 μm.

12. The method for manufacturing a light emitting diode structure according to claim 8, characterized in that: Also includes: Before providing the force applying means to disconnect the first portion and the second portion from each other, the first portion or the second portion is etched to form an etched sidewall in the semiconductor stack layer.

13. The method for manufacturing a light emitting diode structure according to claim 8, characterized in that: Also includes: Before providing the force applying means to disconnect the first part and the second part from each other, a boundary between the first part and the first substrate or a boundary between the second part and the first substrate is irradiated with a laser to reduce the bonding force between the first part and the first substrate or reduce the bonding force between the second part and the first substrate.

14. The method for manufacturing a light emitting diode structure according to claim 8, characterized in that: Also includes: Before providing the force applying means to disconnect the first portion and the second portion from each other, the first portion or the second portion is etched so that a longitudinal cross-sectional area of ​​the first portion and a longitudinal cross-sectional area of ​​the second portion are different from each other.

15. The method for manufacturing a light emitting diode structure according to claim 12, characterized in that: The etching sidewall is located in at least one of the first-type semiconductor layer and the second-type semiconductor layer, and the etching sidewall has a straight edge on a longitudinal section perpendicular to the active layer, and an absolute value of a slope of the straight edge relative to the active layer is greater than or equal to 3.

16. A method for manufacturing a light emitting diode structure, characterized in that: include: Growing a semiconductor stack layer on a first substrate, wherein the semiconductor stack layer is divided into a first portion and a second portion, and comprises a first-type semiconductor layer, an active layer, and a second-type semiconductor layer sequentially grown on the first substrate; Providing a force application means to physically disconnect the first part and the second part from each other, wherein the first part includes a plurality of light emitting diode structures separated from each other; Before providing the force applying means to disconnect the first portion and the second portion from each other, transferring the semiconductor stack layer from the first substrate to a second substrate; Adhere the semiconductor stack layer to the third substrate using a patterned adhesive, and remove the second substrate; as well as Applying the force applying means to the semiconductor stack layer from a side of the semiconductor stack layer away from the third substrate, so as to disconnect the first portion and the second portion from each other; The position where the force applying means is applied is staggered with the pattern of the patterned adhesive material.

17. The method for manufacturing a light emitting diode structure according to claim 16, characterized in that: Also includes: Providing a patterned substrate, wherein the patterned substrate has a plurality of patterned protrusions staggered with the pattern of the patterned adhesive; as well as The force applying means is applied to the plurality of patterned protrusions.

18. The method for manufacturing a light emitting diode structure according to claim 16, characterized in that: The force applying means uses liquid pressure to apply pressure to the semiconductor stack layer.

19. The method for manufacturing a light emitting diode structure according to claim 17, characterized in that: The plurality of patterned protrusions are integrally formed with the patterned substrate, or the plurality of patterned protrusions are adhesive material coated on the patterned substrate.

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