Apparatus and method for implanting particles into a substrate

Abstract

The device for implanting particles into a substrate (12) comprises a particle source (2) and a particle accelerator (4) for generating an ion beam (10) comprising positively charged ions. The device further comprises a substrate holder (30) and an energy filter (20) which is arranged between the particle accelerator (4) and the substrate holder (30). The energy filter (20) is a microstructured film having a predetermined structural profile and is used to set the dopant depth profile and / or defect depth profile generated by the implantation process in the substrate (12). The device further comprises a passive braking element (22) for the ion beam (10), which is arranged between the particle accelerator (4) and the substrate holder (30) and is spaced apart from the energy filter (20).

Description

Technical Field

[0001] The present invention relates to an apparatus and a method for implanting particles into a substrate. Background Art

[0002] In order to change the material properties of semiconductor materials, such as conductivity or carrier lifetime, high-energy ion beams are used. The typical primary energy of the ions is above 500 keV, and typical semiconductor materials are silicon, silicon carbide, gallium arsenide, cadmium telluride, zinc selenide, gallium nitride, etc. However, with the help of high-energy ion beams, the properties of non-semiconductor materials such as quartz glass, lithium niobate, potassium titanyl phosphate or plastics such as PMMA can also be changed.

[0003] In recent years, a new high-energy implantation process has been created on the market, the so-called energy-filtered implantation. In the commercially oriented microengineering production process, the idea is to use ion implantation (masked or unmasked) to produce doping or point defects in semiconductor or non-semiconductor materials with a predetermined depth distribution in the depth range from a few nanometers to tens of micrometers. So-called energy filters for ion implantation are used to achieve this doping depth distribution.

[0004] In such systems, ions produced in special ion sources are brought to the required primary energy by means of complex high-energy accelerators. These systems are usually very complex and take up a lot of space. This leads to high costs when constructing the required buildings and high purchase prices for the accelerator machines. It is also complicated and often difficult to reproducibly adjust the energy value of each type of ion beam.

[0005] Furthermore, in the electrostatic tandem accelerators or series accelerators used so far for high-energy wafer implantation, negative ions must also be implanted on the low-energy side. This limits the available current for certain elements, such as aluminum. Summary of the invention

[0006] The object of the present invention is to propose a device and a method for implanting particles into a substrate which are particularly compact and reliable.

[0007] According to one aspect of the invention, an apparatus for implanting particles into a substrate comprises a particle source and a particle accelerator for generating an ion beam of positively charged ions, and a substrate support. In addition, the apparatus comprises an energy filter, which is arranged between the particle accelerator and the substrate support, wherein the energy filter is a microstructured film with a predetermined structural profile, which is used to set the dopant depth profile and / or defect depth profile generated by the implantation in the substrate. The apparatus also comprises at least one passive braking element for the ion beam, wherein the at least one braking element is arranged between the particle accelerator and the substrate support and spaced apart from the energy filter.

[0008] With the arrangement, energy can be effectively extracted from the ion beam to obtain a desired energy for implanting particles into a substrate.

[0009] In a preferred embodiment, the passive braking element is a flat membrane.

[0010] The thickness of the flat film is preferably between 0.5 μm and 100 μm, more preferably between 2 μm and 30 μm, and particularly preferably between 4 μm and 15 μm.

[0011] The material of the flat membrane is preferably selected from one of the following materials: silicon, tungsten, carbon, titanium. These materials are particularly suitable for obtaining high energy dissipation and for obtaining a membrane with high mechanical stability. Composite materials, for example composite materials containing lead for obtaining high braking efficiency, or multilayer materials consisting of multiple layers with similar thermal expansion characteristics are also conceivable.

[0012] In a preferred embodiment, the passive braking element is arranged between the particle accelerator and the energy filter. In this way, it is ensured that only the energy-reduced ion beam impinges on the energy filter so that only the maximum required power is consumed in the energy filter. The distance between the passive braking element and the energy filter is preferably between 0.5 cm and 50 cm, more preferably between 0.7 cm and 10 cm, and particularly preferably between 1 cm and 2 cm.

[0013] Preferably, the passive braking element is supported pivotably or slidably. In this way, the passive braking element can be moved into the ion beam or out of the ion beam at any desired time. In particular, when a plurality of passive braking elements are present, a desired energy reduction of the ion beam can be adjusted in a simple manner.

[0014] According to another aspect of the present invention, a method for injecting particles into a substrate, using the above-mentioned device, comprises the following steps:

[0015] Producing an ion beam of positively charged ions using an ion source and a particle accelerator; and

[0016] A substrate held by the substrate holder is irradiated with the ion beam with the at least one passive braking element and the energy filter inserted.

[0017] It is particularly preferred in the method that, due to the configuration of the particle accelerator, it can only provide a fixed energy per nucleon for each ion type. It is also possible that, due to the configuration of the particle accelerator, it can only provide ions in the energy range of 1MeV to 50MeV, wherein, due to the configuration of the particle accelerator, less than ten, preferably no more than five ion beams with settable energies are possible. Then, by appropriately selecting the number of the brake elements, and appropriately selecting the characteristics of the brake elements, such as material and / or thickness, the energy of the ion beam shot onto the substrate can be changed, wherein the ion beam passes through the brake elements after leaving the particle accelerator. Through this configuration, the manufacturing costs and size of the particle accelerator can be reduced to a minimum. In addition, for all required ion beam energies, the setting of the ion beam energy can be achieved in a particularly reproducible and reliable manner by means of the above-mentioned selection. In addition, the problems usually encountered when the ion beam energy can be freely changed in a particle accelerator, such as the high control engineering expenditure, are also eliminated.

[0018] Furthermore, in a preferred embodiment, a plurality of copies of at least one brake element are provided and these identical brake elements are introduced alternately, preferably in a rotating manner, into the ion beam. In this way, the radiation exposure and heating of each individual identical brake element can be reduced. An advantageous way of achieving this is to mount the identical brake elements on identical supports and to rotate the supports in a plane perpendicular to the ion beam.

[0019] Further, a plurality of identical energy filters can also be provided, which are introduced into the path of the ion beam, wherein the energy filter and the brake element are preferably driven by the same rotating mechanism. This can reduce the radiation exposure and heating of each energy filter. The brackets of the brake element and the energy filter are located in at least two planes arranged successively along the ion beam direction, wherein the brake element is preferably arranged in the first plane and the energy filter is arranged in the second plane. The brake element thus rotates in the first plane and the energy filter rotates in the second plane.

[0020] The above-mentioned alternating use of the same braking element and possible energy filter also enables the use of a high-frequency linear accelerator or cyclotron as a particle accelerator, which generates a pulsed ion beam with an energy of 0.3 MeV / nucleon to 3.0 MeV / nucleon. Due to the alternating use, the individual braking elements and / or energy filters can also allow ion beams with such high-energy pulses to pass through without being damaged or overheated. Preferably, the alternating moments and durations of the braking elements and / or energy filters are matched to the timing and pulse duty cycle of the pulsed ion beam. However, it is also conceivable to use a continuous ion beam in the same energy range.

[0021] According to another aspect of the present invention, a method for implanting particles into a substrate comprises the steps of:

[0022] - providing an apparatus having a particle source and a particle accelerator, a substrate holder, and an energy filter arranged between the particle accelerator and the substrate holder, wherein the energy filter is a microstructured film with a predetermined structure profile for setting a dopant depth profile and / or a defect depth profile in the substrate generated by implantation;

[0023] - generating an ion beam of positively charged ions by means of a particle source and a particle accelerator; and

[0024] - irradiating the substrate held by the substrate holder with the ion beam under the condition that the energy filter is inserted.

[0025] In this embodiment, the particle accelerator is a high-frequency linear accelerator or a cyclotron, which generates a pulsed or continuous ion beam with an energy of 0.3-3.0 MeV / nucleon, preferably 0.5-3.0 MeV / nucleon, more preferably 1.0-2.0 MeV / nucleon, and particularly preferably 1.3-1.7 MeV / nucleon. The total energy of the ion beam is preferably between 1 MeV and 50 MeV, particularly preferably between 4 MeV and 40 MeV.

[0026] Preferably, the particle accelerator, due to its configuration, is preferably only able to provide a fixed energy per nucleon for each ion type. It is also possible that the particle accelerator, due to its configuration, is only able to provide ions in the energy range of 1-50 MeV, wherein due to the configuration of the particle accelerator, fewer than ten ion beams with settable energies are possible (before striking the brake element or energy filter). In this way, the complex work involved in fine-tuning a plethora of different energies of the ion beam is eliminated, which results in better reproducibility and significantly reduced costs.

[0027] In a preferred embodiment, the duty cycle of the pulsed ion beam is in the range of 1:20 to 1:5, preferably in the range of 1:12 to 1:8.

[0028] Particularly preferably, the energy of the ion beam impinging on the substrate is varied by suitable selection of the number of brake elements, through which the ion beam passes after leaving the particle accelerator, and of the properties of the brake elements, such as their material and / or thickness. As a result, the energy of the ion beam can be reduced to a desired target value in a particularly precise and reproducible manner.

[0029] Preferably, the ion beam expands before impinging on one or more brake elements. This increases the effective area impinged by the ion beam and reduces the impact current density. The measures can be used together with the above-mentioned variation of energy by appropriately selecting the number, material and / or thickness of the brake elements.

[0030] It is also preferred to provide multiple copies of at least one brake element and to have these identical copies enter the beam alternately and / or to provide multiple identical energy filters and to have these energy filters enter the beam alternately, thereby reducing radiation exposure and heating of the individual energy filters and / or brake elements.

[0031] In a preferred embodiment, the particle source provides positively charged ions, thereby making it simple to provide the desired current level for most ion types. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a schematic cross-sectional view of an apparatus for injecting particles into a substrate according to the present invention;

[0033] Figure 2 is a schematic diagram of the working mode of the energy filter, wherein the energy filter is Figure 1 Used in devices;

[0034] Figure 3 are schematic diagrams of different doping profiles that can be produced with the aid of energy filters of different structures;

[0035] Figure 4 is a schematic cross-sectional view of an alternative embodiment of an apparatus for implanting particles into a substrate according to the present invention; and

[0036] Figure 5 is a schematic cross-sectional view of another alternative embodiment of an apparatus for implanting particles into a substrate according to the present invention. DETAILED DESCRIPTION

[0037] exist Figure 1 The device for implanting particles into a substrate shown in FIG. 1 comprises a particle source 2, a particle accelerator 4 and a terminal station 6 with an irradiation chamber 8. A high vacuum usually prevails in the irradiation chamber 8. In the irradiation chamber 8, a substrate 12 to be doped is mounted in a substrate holder 30.

[0038] The material of the substrate 12 is preferably silicon carbide (SiC). However, other semiconductor materials are also conceivable, such as silicon, gallium arsenide, cadmium telluride, zinc selenide, gallium nitride, etc. Also conceivable as the material of the substrate 12 are non-semiconductor materials, such as quartz glass, lithium niobate, potassium titanyl phosphate or even plastics such as PMMA. The substrate 12 is preferably designed as a wafer.

[0039] Preferably positively charged ions are generated in a particle source 2, the desired ion type is selected by an analysis magnet 3, and the positively charged ions are subsequently accelerated by a particle accelerator 4, thereby forming an accelerated ion beam 10. The ions of the ion beam 10 are preferably aluminum, nitrogen, hydrogen, helium, boron, phosphorus, carbon, arsenic or vanadium ions.

[0040] The particle accelerator 4 is preferably a high-frequency linear accelerator, wherein the ions are accelerated by means of a high-frequency field. Optionally, the particle accelerator 4 can also be configured as a cyclotron or as an electrostatic accelerator, such as a tandem accelerator, a tandem accelerator or a single-ended electrostatic accelerator. In an embodiment as an electrostatic tandem accelerator, negative ions are first generated in the particle source 2, then the negative ions are accelerated, the charge is reversed on the high-voltage terminal, and finally accelerated again in a manner similar to that described above.

[0041] Particularly preferably, the particle accelerator 4 is configured as a high-frequency linear accelerator or cyclotron of simple design, which can only accelerate the ion beam 10 to a fixed energy per nucleon. Due to the configuration of the particle accelerator, the control unit of the high-frequency linear accelerator or cyclotron cannot change the energy per nucleon, but instead the control unit is only used to control the parameters required for the operation of the system. It is also conceivable that due to the design of the accelerator, only less than ten, preferably no more than five, ion beams 10 with settable energies are possible. As a result, the complexity of the control technology in the particle accelerator 4 is significantly reduced compared to ion beams with freely variable energies provided by the particle accelerator.

[0042] Due to its configuration, the high-frequency linear accelerator or cyclotron preferably provides a pulsed ion beam 10 consisting of positively charged ions having an energy of 0.3-3.0 MeV / nucleon, preferably 0.5-3.0 MeV / nucleon, more preferably 1.0-2.0 MeV / nucleon, and particularly preferably 1.3-1.7 MeV / nucleon. The ion beam 10 generated in this way can be described by the duty cycle of the ion beam within the time window. For example, the duty cycle (on:off) of the ion beam 10 can be between 1:20 and 1:5, preferably between 1:12 and 1:8.

[0043] By way of example, a pulse duty cycle of 1:10 is used. Since in this case only a 10% time window is available for effective irradiation, in such a pulsed ion beam, if the goal is to achieve an average ion current of 10 μA, a current intensity of 100 μA must be provided within the pulse.

[0044] The frequency of the pulses of the ion beam 10 is between 1 Hz and 2 kHz, preferably between 3 Hz and 500 Hz and particularly preferably between 7 Hz and 200 Hz.

[0045] The ion beam 10 may also be continuous at the same energy.

[0046] The high-energy ion beam 10 is usually formed in an ion mirror 14 before entering the end station 6 and then introduced into the irradiation chamber 8. Here, the energy of the ion beam 10 is dispersed by an energy filter 20 and the ion beam 10 impinges on the substrate 12 to be irradiated.

[0047] As from Figure 4 and 5 As can be seen from the figure, the substrate holder 30 does not have to be stationary, but rather the substrate holder 30 can optionally be provided with a unit for sliding the substrate 12 in the xy direction (in a plane perpendicular to the paper). Furthermore, a wafer tray can also be considered, on which the substrate 12 to be implanted is mounted, and which rotates during implantation. A movement of the substrate holder 30 in the beam direction (z direction) is also possible. Furthermore, the substrate holder 30 can optionally be provided with a heater or a cooler.

[0048] The basic principle of the energy filter 20 is Figure 2 . The energy of the monoenergetic ion beam 10 is modified as a function of the entry point when it passes through the energy filter 20, which is configured as a microstructured film. The resulting energy distribution of the ions of the ion beam 10 leads to a change in the depth distribution of the implanted substance in the matrix of the substrate 12. E1 represents the energy of the first ion, E2 represents the energy of the second ion, c represents the doping concentration, and d represents the depth in the substrate 12. In the right-hand graph, a standard Gaussian distribution is identified with the reference symbol A, which is the distribution produced without using the energy filter 20. The rectangular distribution is shown by way of example with the reference symbol B, which can be obtained when using the energy filter 20.

[0049] exist Figure 3 The layout or three-dimensional structure of the energy filter 20 shown in FIG. 1 shows the basic possibility of generating a plurality of doping depth profiles or defect depth profiles with the aid of the energy filter 20, c also representing the doping concentration and d in turn representing the depth in the substrate 12. Filter structure profiles can in principle be combined with one another in order to obtain new filter structure profiles and thus new dopant depth profiles or defect depth profiles.

[0050] Such an energy filter 20 is usually made of silicon. The energy filter has a thickness between 3 μm and 200 μm, preferably between 5 μm and 50 μm, and particularly preferably between 7 μm and 20 μm. The energy filter can be mounted in a filter frame (not shown). The filter frame is mounted on the filter holder 16 (see Figure 4 ) to allow easy substitution.

[0051] According to one aspect of the invention, at least one passive braking element 22 is arranged in the beam of the ion beam 10. The braking element 22 is arranged between the particle accelerator 4 and the substrate holder 30 and is arranged at a distance from the energy filter 20.

[0052] Preferably, the passive braking element 22 comprises a flat film made of one of the following materials: silicon, tungsten, carbon, titanium. Material selection criteria include, for example, the manufacturability of the film, the braking properties of the material, the heat capacity or heat radiation capability of the material and the possible risk of contaminating the substrate 12.

[0053] The thickness of the flat film is between 0.5 μm and 100 μm, preferably between 2 μm and 30 μm, and more preferably between 4 μm and 15 μm.

[0054] Each brake element 22 can be mounted in a frame (not shown). The frame can be mounted on the bracket 18 (see Figure 4 ) for easy replacement.

[0055] exist Figure 1 , exactly one passive braking element 22 is shown, which is arranged between the particle accelerator 4 and the energy filter 20 and preferably within the irradiation chamber 8 .

[0056] Figure 4 Show Figure 1 FIG. 1 is a partial diagram of an alternative embodiment of a device in FIG. 1 . The same elements are represented by the same reference numerals. No further explanation is required. Figure 1 The descriptions made apply to the same components, combined Figure 1 The statements made also apply to Figure 4 Parts not shown.

[0057] In particular, as described above, when using a particle accelerator 4 that provides a pulsed ion beam 10 , the ion beam 10 is preferably expanded in a beam expander 24 before striking the braking element 22 or the energy filter 20 .

[0058] exist Figure 4 In the embodiment shown in FIG. 1 , a plurality of passive brake elements 22 are provided. As shown, the brake elements 22 can be arranged in the beam direction before or after the energy filter 20 and are usually mounted in the support 18 .

[0059] Each brake element 22 is spaced apart from an adjacent brake element 22 or from the energy filter 20. The spacing between two adjacent brake elements 22 or between a brake element 22 and an energy filter 20 is typically between 0.5 cm and 50 cm, preferably between 0.7 cm and 10 cm, and more preferably between 1 cm and 2 cm.

[0060] Each passive brake element 22 can be supported such that it can be moved in a direction perpendicular to the beam, as shown at the first and last brake element 22. In the case of movable brake elements 22, the support 18 is not shown for the sake of simplicity.

[0061] In this way, even if the energy of the ion beam 10 provided by the particle accelerator 4 is fixed, the energy of the ion beam 10 incident on the substrate 12 can be varied, for example, by varying the number of brake elements 22 through which the ion beam 10 passes after leaving the particle accelerator 4. Alternatively or additionally, the energy of the ion beam 10 incident on the substrate 12 can be varied by appropriately selecting the properties of a brake element 22 or a plurality of brake elements 22, such as material and / or thickness.

[0062] To be precise, all of the above parameters must be set in such a way that the braking performance of all braking elements 22 and energy filter 20 in the beam reduces the energy of ion beam 10 to the desired energy for the application in question (depth of dopant distribution or defect distribution in substrate 12). Thus, the selection and configuration of braking elements 22 together with energy filter 20 decisively determine the primary energy of ion beam 10 for the respective application based on a fixed per-nucleon energy from the accelerator.

[0063] It is also possible that the passive brake element 28, which is preferably designed as a flat membrane layer, is connected integrally to the energy filter 20. Since the energy filter 20 is usually made of silicon, the brake element 28 is preferably also made of silicon. In this way, distortion effects due to different thermal expansion behaviors of different materials can be avoided. However, embodiments of a combination of energy filter 20 and brake element 28 are also conceivable, in which different materials are provided for the energy filter 20 and the brake element 28. In these cases, the energy filter 20 and the brake element 28 do not need to form an integral structure, although a mechanically strong connection with good thermal conductivity must be provided between the energy filter 20 and the brake element 28.

[0064] Figure 5 The embodiments in several aspects correspond to Figure 4 The added device can rotate one or more brake elements 22 and / or one or more energy filters 20.

[0065] In this case, at least one brake element 22 and / or at least one energy filter 20 is mounted on a shaft 34, which is rotatably supported and driven by the rotation mechanism 32. As a result, the corresponding brake element 22 and / or the corresponding energy filter 20 can be moved into or out of the beam. As a drive component of the rotation mechanism 32, a servomotor is particularly suitable.

[0066] It is particularly preferred in this embodiment that, as shown, multiple copies of the brake element 22, preferably identical copies, are provided and that these brake elements 22 are rotated alternately into the path of the ion beam 10. Additionally or alternatively, there may also be multiple, preferably identical, energy filters 20, which are alternately introduced into the path of the ion beam 10. The energy filters 20 and the holders 16, 18 of the brake elements 22 may also be configured as a single integral unit.

[0067] When a pulsed ion beam 10 is used, the movement of the energy filter 20 and / or the passive braking element 22 is advantageously matched to the periodic temporal structure of the ion beam 10. This ensures that the ion pulses always strike the active region of the energy filter 20 or the braking element 22 and prevents the ion pulses from always striking the same locations of the energy filter 20 or the braking element 22. This matching can be achieved by a rotational movement per pulse or per several pulses, for example per 10 to 20 pulses.

[0068] In general, the matching of the pulsed ion beam 10 and the rotating energy filter 20 and / or brake element 22 should result in the energy filter 20 and / or brake element 22 being substantially uniformly irradiated, the energy input being distributed as evenly as possible, and avoiding dead time due to unintentional irradiation of auxiliary or retaining structures by the energy filter 20 or brake element 22.

[0069] A rotational movement is necessary in the case of very high ion currents and very large differences in energy on the accelerator side and on the substrate side of the ion beam 10. In these cases, the brake element 22 and / or the energy filter 20 are heated very strongly. It is therefore necessary to increase the effective surface area on the accelerator side that is struck by the ion beam 10 and / or to reduce the impact current density.

[0070] For the power dissipated in the brake element 22 or in the energy filter 20 , the following applies:

[0071] Dissipated power (energy converted to heat in the element) = beam power minus transmitted power (power remaining after passing through the element).

[0072] When the dissipated power value is higher than 3W / cm 2 , preferably higher than 2W / cm 2In the case of , it is advisable to use the same brake elements 22 or the same energy filters 20 alternately.

[0073] In related embodiments, linear movements of the energy filter 20 and / or the brake element 22 instead of rotational movements are also contemplated.

[0074] According to one aspect of the invention, the device is considered to use a structured energy filter 20 together with an unstructured braking element 22 for energy variation. This concept can be used to greatly simplify the particle accelerator 4, because the particle accelerator can be constructed in such a way that, for example, it only needs to provide a fixed energy per nucleon. The target energy of the ion beam 10 required for a specific application is then set by subtracting the necessary amount of energy from the energy of the primary beam.

[0075] In each of the above-described embodiments, the number of brake elements 22 may vary, as may their spatial arrangement and characteristics, such as material and thickness. There must be at least one brake element 22, which may be arranged before or after the energy filter 20 in the direction of the ion beam. A specific single brake element 22 selected from the embodiments described above may also be used alone or in any combination with other brake elements 22 in other embodiments.

[0076] When there are multiple brake elements 22 , each brake element 22 may have different characteristics, or each brake element 22 may all have the same configuration.

[0077] The braking element 22 and / or the energy filter 20 can also be movable in the beam direction, either individually or relative to one another or together as a whole group.

[0078] In all embodiments, the brake element 22 and the energy filter 20 can also be arranged in a separate vacuum chamber which can be closed by a valve and is arranged inside the irradiation chamber 8 or is directly connected to the irradiation chamber.

Claims

1. An apparatus for implanting particles into a substrate (12), comprising: A particle source (2) and a particle accelerator (4) for generating an ion beam (10) of positively charged ions; A substrate support (30); An energy filter (20) is arranged between the particle accelerator (4) and the substrate holder (30), wherein the energy filter (20) is a microstructured film with a predetermined structural profile, and is used to set the dopant depth distribution and / or defect depth distribution generated by implantation in the substrate (12); as well as at least one passive braking element (22) for the ion beam (10), the passive braking element (22) being arranged between the particle accelerator (4) and the substrate holder (30) and spaced apart from the energy filter (20); Wherein, the particle accelerator (4) is a high-frequency linear accelerator or a cyclotron accelerator; wherein the particle accelerator (4) is configured to provide only a fixed energy per nucleon for each ion type, or The particle accelerator (4) is configured to provide only ions in the energy range of 1 MeV to 50 MeV, wherein the particle accelerator (4) has a configuration according to which only fewer than ten ion beams (10) with settable energies are possible.

2. The device according to claim 1, characterized in that The at least one passive braking element (22) comprises a flat membrane.

3. The device according to claim 2, wherein: The thickness of the flat film is between 2 μm and 30 μm.

4. The device according to claim 2, wherein: The material of the flat film is selected from one of the following materials: silicon, tungsten, carbon, and titanium.

5. The device according to claim 1, wherein: The at least one passive braking element (22) is arranged between the particle accelerator (4) and the energy filter (20).

6. The device according to claim 1, wherein: The at least one passive brake element (22) is pivotably or slidably supported.

7. The device according to claim 1, wherein: The particle accelerator (4) generates a pulsed or continuous ion beam (10) having an energy of 1.0 MeV / nucleon to 2.0 MeV / nucleon.

8. The device according to claim 1, wherein: The energy filter (20) and the support (16, 18) of the at least one passive braking element (22) are configured as a single integral unit.

9. The device according to claim 1, wherein: The at least one passive braking element (22) and the energy filter (20) are arranged in a separate vacuum chamber configured to be blocked by a plurality of valves, wherein the vacuum chamber is arranged within an irradiation chamber (8), the substrate holder (30) and the substrate (12) are arranged within the irradiation chamber (8), or the vacuum chamber is directly connected to the irradiation chamber (8).

10. The device according to claim 1, wherein: At least one passive braking element (22) is arranged after the energy filter (20) in the direction of the ion beam.

11. A method for implanting particles into a substrate (12), comprising the steps of: A device is provided, the device comprising: Particle source (2) and particle accelerator (4), a substrate holder (30), and An energy filter (20) is arranged between the particle accelerator (4) and the substrate holder (30), wherein the energy filter (20) is a microstructured film with a predetermined structural profile for setting a dopant depth profile and / or a defect depth profile generated by implantation in the substrate (12), at least one passive braking element (22), which is arranged between the particle accelerator (4) and the substrate holder (30) and is spaced apart from the energy filter (20); generating an ion beam (10) of positively charged ions by a particle source (2) and a particle accelerator (4); and irradiating the substrate (12) held by the substrate holder (30) with the ion beam (10) under the condition that the energy filter (20) is inserted; Wherein, the particle accelerator (4) is a high-frequency linear accelerator or a cyclotron accelerator, which generates a pulsed or continuous ion beam (10) with an energy of 0.3 MeV / nucleon to 3.0 MeV / nucleon; wherein the particle accelerator (4) is configured to provide only a fixed energy per nucleon for each ion type, or wherein the particle accelerator (4) is configured to provide only ions in the energy range of 1 MeV to 50 MeV, wherein the particle accelerator (4) has a configuration according to which only fewer than ten ion beams (10) of settable energies are possible; The energy of the ion beam (10) incident on the substrate (12) is varied by appropriately selecting the number of the at least one passive braking element (22) and appropriately selecting the material and / or thickness of the at least one passive braking element (22), wherein the ion beam (10) passes through the passive braking element after leaving the particle accelerator (4).

12. The method according to claim 11, wherein: The pulse duty cycle of the pulsed ion beam (10) is in the range of 1:20 to 1:

5.

13. The method according to claim 11, wherein: The ion beam (10) is expanded before impinging on the at least one passive braking element (22).

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