An etching device for diode production and processing and its use method

Abstract

The present invention discloses an etching device for diode production and processing and a method for using the same. The device comprises an adjustment mechanism and an electrostatic mechanism. The electrostatic mechanism, which receives the outer ring of an inner cylinder, spirally rotates around a transmission mechanism and utilizes an external contact member to contact a dial arrangement shaft. Static electricity is generated by friction between the two. Since the annular array of the external contact member is opened, it becomes a quasi-circular shape, and the static electricity generated thereby forms a quasi-circular electric field. The diameter of the quasi-circular electrostatic field generated is larger than the diameter of the etching substrate, so that the diode on the etching substrate can be limited. The generated electrostatic field is attracted by an outwardly extending horizontal bar, so that the edge height of the generated electrostatic field is increased, and the overall electrostatic field becomes quasi-inverted funnel-shaped, so that substances generated by chemical reactions during wet etching are adsorbed, and impurities in a closed container can be blocked, so that the diode on the etching substrate is reduced in contact with impurities.

Description

Technical Field

[0001] The present invention relates to the technical field of diode production, and in particular to an etching device for diode production and processing and a method for using the same. Background Art

[0002] Diodes are one of the earliest semiconductor devices and are widely used. In particular, they are used in various electronic circuits. By rationally connecting diodes with components such as resistors, capacitors, and inductors, they form circuits with diverse functions. These can achieve a variety of functions, including rectifying AC power, detecting modulated signals, limiting and clamping, and stabilizing power supply voltages.

[0003] Patent No. CN201910049595.2 discloses an etching device for diode production and processing, including a casing, a pump casing, a storage tank, a protective casing and a water-cooling pipe. The protective casing is located on the top of the casing, and a track B is integrally formed on the top surface of the casing. The protective casing is mounted on the track B through a slider. A fixing plate A is fixed to the top surface of the protective casing. The top side of the protective casing connected to the fixing plate A is connected to the side of the protective casing by a hinge. A handle is provided on the side of the protective casing away from the pump casing, and one end of the handle is threadedly connected to a connecting rod. The end of the connecting rod away from the handle is connected to a fixing plate C, and the fixing plate C is fixed to the upper surface of the fixing plate B. This invention solves the advantages of strong practicality and ease of use, solves the problems of low efficiency and weak heat dissipation, but cannot use the electrostatic field to adsorb substances generated by chemical reactions during wet etching, and can block impurities in closed containers.

[0004] Patent No. CN201921378453.2 discloses an etching device for diode production and processing, including an upper electrode plate, a lower electrode plate and a plasma. The plasma is arranged on the lower surface of the upper electrode plate. An etching gun is arranged on the outside of the upper electrode plate and the plasma. The etching gun is a cylindrical hollow cavity. The upper side wall of the etching gun is provided with an air intake fan, the lower end of the etching gun is provided with an air jet, and the outer side wall of the lower end of the etching gun is plugged with a protective cover. This patent solves the problem of reducing diode contact impurities on the etched substrate.

[0005] To this end, we propose an etching device for diode production and processing and a method of using the same to solve the above problems. Summary of the Invention

[0006] The purpose of the present invention is to address the shortcomings of the prior art. The electrostatic field generated is attracted by an outwardly extending horizontal bar, so that the edge height of the generated electrostatic field is increased, and the overall electrostatic field becomes an inverted funnel shape, thereby adsorbing substances generated by chemical reactions during wet etching, and being able to block impurities in a sealed container, thereby reducing the contact of impurities with the diode on the etched substrate. An etching device for diode production and processing and a method of use thereof are proposed.

[0007] In order to achieve the above-mentioned purpose, the present invention adopts the following technical solutions: an etching device for diode production and processing, including an adjustment mechanism and an electrostatic mechanism, the adjustment mechanism includes a mounting plate, a mounting vertical cylinder, a rotating shaft, a serial outer cylinder, a connector, a connecting cylinder, an outward-extending crossbar, a receiving inner cylinder and a transmission mechanism, the lower end of the mounting plate is equipped with a mounting vertical cylinder, the inner cavity of the mounting vertical cylinder is penetrated by a rotating shaft, the outer ring of the other end of the rotating shaft is sleeved with a serial outer cylinder, the two ends of the serial outer cylinder are connected to the inner end face of the connecting cylinder through a connecting member, the outer end face of the connecting cylinder is provided with an outward-extending crossbar, the upper end of the connecting cylinder is equipped with a receiving inner cylinder, the mounting vertical cylinder is provided with a plurality of connecting members, and the connecting members are provided with a plurality of connecting members. The outer ring is equipped with a transmission mechanism, and the outer ring of the inner cylinder is sleeved with an electrostatic mechanism. The electrostatic mechanism includes a limiting outer cylinder, an edge cavity, an edge opening cavity and a contact mechanism. Edge cavities are opened at both ends of the limiting outer cylinder, and an edge opening cavity is set between the edge cavities. The inner cavity of the edge opening cavity is laterally provided with a contact mechanism. The mounting plate is hung on the top of the inner cavity of the sealed container, and an external motor is installed in the inner cavity of the vertical cylinder so that it can rotate with the top of the rotating shaft, so that the series outer cylinders rotate in the same direction under the drive of the rotating shaft, thereby driving the connecting cylinder at the outer end of the connecting piece to rotate, and the electrostatic mechanism of the outer ring of the inner cylinder spirally rotates around the transmission mechanism.

[0008] Preferably, the transmission mechanism includes an inner series ring, a rotating disk, an outer contact piece and a transparent cavity. The outer ring of the inner series ring is equipped with a rotating disk. The outer ring annular array of the rotating disk is provided with an outer contact piece. The side end of the outer contact piece is provided with a transparent cavity.

[0009] Preferably, the contact mechanism includes a horizontal mounting tube, a central through cavity, a double-eared cross rod and a toggle arrangement shaft. The inner cavity of the horizontal mounting tube is provided with a central through cavity, double-eared cross rods are installed at both ends of the horizontal mounting tube, and the outer ends of the double-eared cross rods are arranged with toggle arrangement shafts.

[0010] Preferably, the toggle arrangement shaft includes an internal connection mechanism, a connection block, a movable connection block and a contact rod. A connection block is provided at the side end of the internal connection mechanism, and the other end of the connection block is movably connected to the contact rod through the movable connection block.

[0011] Preferably, the movable connecting block is a component made of synthetic rubber material.

[0012] Preferably, the external contact piece is provided with a width such that it can make transverse contact with the contact rod.

[0013] Preferably, the central through cavity and the inner cavity of the double-ear cross bar penetrate each other.

[0014] Preferably, the inner cavity wall of the inner series ring fits with the outer end wall of the mounting vertical cylinder, and the opening height of the rotating disk does not exceed the opening height of the edge cavity.

[0015] Preferably, the outwardly extending cross bar is a component made of an alloy material, and the generated electrostatic field is attracted by the outwardly extending cross bar, so that the edge height of the generated electrostatic field is increased, and the overall electrostatic field becomes an inverted funnel shape, which adsorbs substances generated by chemical reactions during wet etching and can block impurities in the sealed container, thereby reducing the contact of the diode on the etched substrate with impurities.

[0016] Another technical solution proposed by the present invention is to provide a method for using an etching device for diode production and processing, comprising the following steps:

[0017] S1: Place the entire device in a sealed container, decompose argon gas into argon ions, and the argon ions are accelerated by the anode electric field to react chemically with the sample surface;

[0018] S2: Hang the mounting plate on the top of the inner cavity of the sealed container, install an external motor in the inner cavity of the vertical cylinder, and make it rotate with the top of the rotating shaft, so that the series outer cylinders rotate in the same direction driven by the rotating shaft, thereby driving the connecting cylinder at the outer end of the connecting piece to rotate, and the electrostatic mechanism connected to the outer ring of the inner cylinder rotates spirally around the transmission mechanism;

[0019] S3: Using the external contact to contact the toggle arrangement shaft, the friction between the two generates static electricity. Because the annular array of the external contact is opened, it becomes a circular shape, and the static electricity generated forms a circular electric field. The diameter of the generated circular electrostatic field is larger than the diameter of the etching substrate, so that it can limit the diode on the etching substrate.

[0020] S4: The generated electrostatic field attracts it through the extended horizontal rod, so that the edge height of the generated electrostatic field is increased, and the overall electrostatic field becomes an inverted funnel shape, which adsorbs the substances generated by the chemical reaction during wet etching and can block impurities in the closed container, so that the diode on the etched substrate is exposed to less impurities.

[0021] Compared with the prior art, the present invention has the following beneficial effects:

[0022] 1. The present invention proposes an etching device for diode production and processing and a method for using the same. The entire device is placed in a sealed container, argon gas is decomposed into argon ions, and the argon ions are accelerated by the anode electric field to chemically react with the sample surface. The mounting plate is hung on the top of the inner cavity of the sealed container, and an external motor is installed in the inner cavity of the vertical cylinder so that it can rotate with the top of the rotating shaft. The series outer cylinders rotate in the same direction driven by the rotating shaft, thereby driving the connecting cylinder at the outer end of the connecting piece to rotate. The electrostatic mechanism receiving the outer ring of the inner cylinder rotates spirally around the transmission mechanism, and the external contact piece is used to contact the dial arrangement shaft. The friction between the two generates static electricity. Since the annular array of the external contact piece is opened, it becomes a quasi-circular shape, and the static electricity generated thereby forms a quasi-circular electric field.

[0023] 2. The present invention proposes an etching device for diode production and processing and a method for using the same. The diameter of the circular electrostatic field generated is larger than the diameter of the etching substrate, so that the diode on the etching substrate can be limited. The generated electrostatic field attracts the outer cross bar, so that the edge height of the generated electrostatic field is increased, and the overall electrostatic field becomes an inverted funnel shape, which adsorbs substances generated by chemical reactions during wet etching and can block impurities in the sealed container, thereby reducing the contact of the diode on the etching substrate with impurities. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 This is an overall structural diagram of an etching device for diode production and processing proposed by the present invention;

[0025] Figure 2 To adjust the schematic diagram of the mechanism structure;

[0026] Figure 3 Schematic diagram of the transmission mechanism structure;

[0027] Figure 4 Schematic diagram of the electrostatic mechanism structure;

[0028] Figure 5 Schematic diagram of the contact mechanism structure;

[0029] Figure 6 This is a schematic diagram of the toggle arrangement axis structure.

[0030] In the figure: 1. Adjustment mechanism; 11. Mounting plate; 12. Mounting vertical cylinder; 13. Rotating shaft; 14. Series outer cylinder; 15. Connecting piece; 16. Connecting cylinder; 17. Outwardly extending horizontal bar; 18. Receiving inner cylinder; 19. Transmission mechanism; 191. Inner series ring; 192. Rotating plate; 193. External contact piece; 194. Through cavity; 2. Electrostatic mechanism; 21. Position-limiting outer cylinder; 22. Edge cavity; 23. Edge opening cavity; 24. Contact mechanism; 241. Horizontal mounting cylinder; 242. Middle through cavity; 243. Double-ear horizontal bar; 244. Toggle arrangement axis; 2441. Inner connecting mechanism; 2442. Connecting block; 2443. Movable connecting block; 2444. Contact rod. DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0032] Example 1

[0033] Reference Figure 1-4, an etching device for diode production and processing, including an adjustment mechanism 1 and an electrostatic mechanism 2, the adjustment mechanism 1 includes a mounting plate 11, a mounting vertical cylinder 12, a rotating shaft 13, a serial outer cylinder 14, a connecting piece 15, a connecting cylinder 16, an outward extending crossbar 17, a receiving inner cylinder 18 and a transmission mechanism 19, the lower end of the mounting plate 11 is mounted with a mounting vertical cylinder 12, the inner cavity of the mounting vertical cylinder 12 is penetrated by a rotating shaft 13, the outer ring of the other end of the rotating shaft 13 is sleeved with a serial outer cylinder 14, the serial The two ends of the outer cylinder 14 are connected to the inner end surface of the connecting cylinder 16 through the connecting piece 15. The outer end surface of the connecting cylinder 16 is provided with an outward extending cross bar 17. The upper end of the connecting cylinder 16 is provided with a receiving inner cylinder 18. The outer ring of the vertical cylinder 12 is provided with a transmission mechanism 19. The outer ring of the receiving inner cylinder 18 is sleeved with an electrostatic mechanism 2. The electrostatic mechanism 2 includes a limiting outer cylinder 21, an edge cavity 22, an edge opening cavity 23 and a contact mechanism 24. Both ends of the limiting outer cylinder 21 are provided with an edge cavity 22. The edge cavity 22 is provided with a contact mechanism 24. An edge opening 23 is provided between the edges, and a contact mechanism 24 is provided laterally in the inner cavity of the edge opening 23. The mounting plate 11 is hung on the top of the inner cavity of the sealed container, and an external motor is installed in the inner cavity of the vertical cylinder 12 so that it can rotate with the top of the rotating shaft 13, so that the series outer cylinder 14 rotates in the same direction under the drive of the rotating shaft 13, thereby driving the connecting cylinder 16 at the outer end of the connecting member 15 to rotate, and the electrostatic mechanism 2 on the outer ring of the inner cylinder 18 surrounds the transmission mechanism 19 to rotate. The transmission mechanism 19 rotates spirally, and includes an inner series ring 191, a rotating disk 192, an outer contact piece 193 and a transparent cavity 194. The outer ring of the inner series ring 191 is equipped with a rotating disk 192, and the outer ring annular array of the rotating disk 192 is provided with an outer contact piece 193. The side end of the outer contact piece 193 is provided with a transparent cavity 194. The inner cavity wall of the inner series ring 191 is in contact with the outer end wall of the mounting vertical cylinder 12, and the opening height of the rotating disk 192 does not exceed the opening height of the edge cavity 22.

[0034] Example 2

[0035] Reference Figure 5 and 6, an etching device for diode production and processing, the contact mechanism 24 includes a horizontal mounting cylinder 241, a middle through cavity 242, a double-eared cross bar 243 and a toggle arrangement shaft 244, the inner cavity of the horizontal mounting cylinder 241 is provided with a middle through cavity 242, and the two ends of the horizontal mounting cylinder 241 are provided with double-eared cross bars 243, and the outer ends of the double-eared cross bars 243 are provided with toggle arrangement shafts 244. The external contact member 193 is used to contact the toggle arrangement shaft 244, and the friction between the two generates static electricity. Because the annular array of the external contact member 193 is opened, it becomes a circular shape, so the static electricity generated forms a circular electric field, and the circular static electricity generated The field diameter is larger than the diameter of the etching substrate, so that it can limit the diode on the etching substrate. The middle through cavity 242 and the inner cavity of the double-ear cross bar 243 are penetrated. The arrangement axis 244 includes an internal connection mechanism 2441, a connection block 2442, a movable connection block 2443 and a contact rod 2444. The side end of the internal connection mechanism 2441 is provided with a connection block 2442, and the other end of the connection block 2442 is movably connected to the contact rod 2444 through the movable connection block 2443. The movable connection block 2443 is a component made of synthetic rubber material. The width of the external contact piece 193 is set so that it can be in horizontal contact with the contact rod 2444.

[0036] Example 3

[0037] Reference Figure 1-6 A method for using an etching device for diode production and processing, wherein the outwardly extending crossbar 17 is a component made of an alloy material. The generated electrostatic field is attracted by the outwardly extending crossbar 17, so that the edge height of the generated electrostatic field is increased, and the overall electrostatic field becomes an inverted funnel shape, which adsorbs substances generated by chemical reactions during wet etching and can block impurities in a closed container, thereby reducing the contact of impurities with the diode on the etched substrate.

[0038] In order to better demonstrate a method for using an etching device for producing and processing a diode, this embodiment now proposes a method for using an etching device for producing and processing a diode, including the following steps:

[0039] S1: Place the entire device in a sealed container, decompose argon gas into argon ions, and the argon ions are accelerated by the anode electric field to react chemically with the sample surface;

[0040] S2: Hang the mounting plate 11 on the top of the inner cavity of the sealed container, install an external motor in the inner cavity of the vertical cylinder 12, and make it rotate with the top of the rotating shaft 13, so that the series outer cylinder 14 rotates in the same direction under the drive of the rotating shaft 13, thereby driving the connecting cylinder 16 at the outer end of the connecting member 15 to rotate, and the electrostatic mechanism 2 on the outer ring of the inner cylinder 18 rotates spirally around the transmission mechanism 19;

[0041] S3: The external contact member 193 is brought into contact with the shifting arrangement shaft 244, and the friction between the two generates static electricity. Since the annular array of the external contact member 193 is opened, it forms a quasi-circular shape, and the static electricity generated thereby forms a quasi-circular electric field. The diameter of the quasi-circular electrostatic field is larger than the diameter of the etching substrate, so that the diode on the etching substrate can be limited.

[0042] S4: The generated electrostatic field attracts it through the extended cross bar 17, so that the edge height of the generated electrostatic field is increased, and the overall electrostatic field becomes an inverted funnel shape, which adsorbs the substances generated by the chemical reaction during wet etching and can block impurities in the sealed container, so that the diode on the etched substrate is exposed to less impurities.

[0043] Working principle: Place the whole device in a sealed container, decompose argon gas into argon ions, which react chemically with the sample surface through the acceleration of the anode electric field, hang the mounting plate 11 on the top of the inner cavity of the sealed container, install an external motor in the inner cavity of the vertical cylinder 12, so that it can rotate with the top of the rotating shaft 13, so that the series outer cylinder 14 rotates in the same direction under the drive of the rotating shaft 13, thereby driving the connecting cylinder 16 at the outer end of the connecting member 15 to rotate, and the electrostatic mechanism 2 on the outer ring of the inner cylinder 18 rotates spirally around the transmission mechanism 19, and the external contact member 193 is used to rotate with the dial arrangement shaft 244. When the two are in contact, static electricity is generated by friction between them. Since the annular array of the external contact member 193 is opened, it becomes a quasi-circular shape, and the static electricity generated thereby forms a quasi-circular electric field. The diameter of the quasi-circular electrostatic field generated is larger than the diameter of the etching substrate, so that it can limit the diode on the etching substrate. The generated electrostatic field is attracted by the outwardly extending cross bar 17, so that the edge height of the generated electrostatic field is increased, and the overall electrostatic field becomes an inverted funnel shape, which adsorbs the substances generated by the chemical reaction during wet etching, and can block impurities in the sealed container, so that the diode on the etching substrate is less exposed to impurities.

[0044] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus.

[0045] While embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions, and variations may be made to these embodiments without departing from the principles and spirit of the invention, and that the scope of the invention is defined by the appended claims and their equivalents.

Claims

1. An etching device for diode production and processing, comprising an adjustment mechanism (1) and an electrostatic mechanism (2), characterized in that: The adjustment mechanism (1) comprises a mounting plate (11), a mounting vertical cylinder (12), a rotating shaft (13), a serial outer cylinder (14), a connecting piece (15), a connecting cylinder (16), an outward-extending crossbar (17), a receiving inner cylinder (18) and a transmission mechanism (19); the mounting vertical cylinder (12) is mounted on the lower end of the mounting plate (11); the rotating shaft (13) is provided through the inner cavity of the mounting vertical cylinder (12); the outer ring of the other end of the rotating shaft (13) is sleeved with the serial outer cylinder (14); the two ends of the serial outer cylinder (14) are connected to the inner end surface of the connecting cylinder (16) through the connecting piece (15); the outer end surface of the connecting cylinder (16) is provided with an outward-extending crossbar (17); the upper end of the connecting cylinder (16) is mounted with the receiving inner cylinder (18); and the outer ring of the mounting vertical cylinder (12) is provided with a transmission mechanism (19); The transmission mechanism (19) comprises an inner series ring (191), a rotating disk (192), an outer contact piece (193) and a transparent cavity (194); the outer ring of the inner series ring (191) is mounted with a rotating disk (192); the outer ring of the rotating disk (192) is provided with an annular array of outer contacts (193); and the side end of the outer contact piece (193) is provided with a transparent cavity (194); The outer ring of the receiving inner cylinder (18) is sleeved with an electrostatic mechanism (2), and the electrostatic mechanism (2) comprises a limiting outer cylinder (21), an edge cavity (22), an edge opening cavity (23) and a contact mechanism (24). The limiting outer cylinder (21) is provided with an edge cavity (22) at both ends, an edge opening cavity (23) is provided between the edge cavities (22), and a contact mechanism (24) is provided laterally in the inner cavity of the edge opening cavity (23); The contact mechanism (24) comprises a transverse mounting cylinder (241), a central through cavity (242), a double-eared cross bar (243) and a toggle arrangement shaft (244); the inner cavity of the transverse mounting cylinder (241) is provided with the central through cavity (242); both ends of the transverse mounting cylinder (241) are provided with double-eared cross bars (243); and the outer ends of the double-eared cross bars (243) are provided with the toggle arrangement shaft (244).

2. The etching device for diode production and processing according to claim 1, characterized in that: The shifting arrangement shaft (244) comprises an inner connecting mechanism (2441), a connecting block (2442), a movable connecting block (2443) and a contact rod (2444); a connecting block (2442) is provided at a side end of the inner connecting mechanism (2441); and the other end of the connecting block (2442) is movably connected to the contact rod (2444) via the movable connecting block (2443).

3. The etching device for diode production and processing according to claim 2, characterized in that: The movable connecting block (2443) is a component made of synthetic rubber material.

4. The etching device for diode production and processing according to claim 1, characterized in that: The outer contact member (193) is provided with a width such that it can laterally contact the contact rod (2444).

5. The etching device for diode production and processing according to claim 1, characterized in that: The central through cavity (242) and the inner cavity of the double-ear crossbar (243) are interpenetrating.

6. The etching device for diode production and processing according to claim 1, characterized in that: The inner cavity wall of the inner series ring (191) is in contact with the outer end wall of the mounting vertical cylinder (12), and the opening height of the rotating disk (192) does not exceed the opening height of the edge cavity (22).

7. The etching device for diode production and processing according to claim 1, characterized in that: The outwardly extending crossbar (17) is a component made of an alloy material.

8. A method for using the etching device for diode production and processing according to any one of claims 1 to 7, characterized in that: The following steps are involved: S1: Place the entire device in a sealed container, decompose argon gas into argon ions, and the argon ions are accelerated by the anode electric field to react chemically with the sample surface; S2: Hang the mounting plate (11) on the top of the inner cavity of the sealed container, install an external motor in the inner cavity of the vertical cylinder (12), and make it rotate with the top of the rotating shaft (13), so that the series outer cylinder (14) rotates in the same direction under the drive of the rotating shaft (13), thereby driving the connecting cylinder (16) at the outer end of the connecting member (15) to rotate, and the electrostatic mechanism (2) on the outer ring of the inner cylinder (18) rotates spirally around the transmission mechanism (19); S3: The external contact member (193) is brought into contact with the shifting arrangement shaft (244), and static electricity is generated by friction between the two. Since the annular array of the external contact member (193) is opened, it becomes a quasi-circular shape, and the static electricity generated thereby forms a quasi-circular electric field. The diameter of the quasi-circular electrostatic field generated is larger than the diameter of the etching substrate, so that the diode on the etching substrate can be limited. S4: The generated electrostatic field attracts it through the extended cross bar (17), so that the edge height of the generated electrostatic field is increased, and the overall electrostatic field becomes an inverted funnel shape, which adsorbs the substances generated by the chemical reaction during wet etching and can block impurities in the closed container, so that the diode on the etching substrate is exposed to less impurities.

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