Thermal processing unit, substrate processing apparatus, thermal processing method, and storage medium

Abstract

This invention provides a heat treatment unit, a substrate processing apparatus, a heat treatment method, and a storage medium capable of simultaneously achieving both high-efficiency recovery of sublimation products and heat treatment under low-oxygen conditions. The heat treatment unit includes: a heating section that supports and heats a substrate coated with a film; a chamber having a peripheral wall and a cover, the peripheral wall surrounding the heating section, and the cover covering the heating section with a gap between the cover and the peripheral wall, thus forming a processing space on the heating section; a housing that houses the heating section and the chamber; a first gas supply section that supplies a first gas with an oxygen concentration lower than atmospheric pressure to the processing space; an exhaust section that exhausts gas from the processing space at a rate greater than the supply of the first gas; a second gas supply section that supplies a second gas with an oxygen concentration lower than atmospheric pressure to the gap between the peripheral wall and the cover; and a third gas supply section that supplies a third gas with an oxygen concentration lower than atmospheric pressure to the outside of the chamber within the housing.

Description

Technical Field

[0001] This invention relates to a heat treatment unit, a substrate processing apparatus, a heat treatment method, and a storage medium. Background Technology

[0002] Patent Document 1 discloses a substrate heating device, comprising: a heating plate for placing and heating a substrate; and a gas supply unit for supplying a low-oxygen atmosphere forming gas from one end of a processing space to the other end when the substrate is heated, the low-oxygen atmosphere forming gas being used to make the processing space a low-oxygen atmosphere.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: International Publication No. 2020 / 022069 Summary of the Invention

[0006] The technical problem that the invention aims to solve

[0007] The present invention provides a heat treatment unit, a substrate processing apparatus, a heat treatment method, and a storage medium capable of simultaneously achieving both high-efficiency recovery of sublimation products and heat treatment under low-oxygen conditions.

[0008] Means for solving technical problems

[0009] A heat treatment unit according to one aspect of the present invention includes: a heating section for supporting a substrate with a coating and heating the substrate; a chamber having a peripheral wall and a cover, the peripheral wall surrounding the heating section and the cover covering the heating section to form a processing space on the heating section by forming a gap between the cover and the peripheral wall; a housing for housing the heating section and the chamber; a first gas supply section for supplying a first gas with an oxygen concentration lower than that of the atmosphere to the processing space; an exhaust section for exhausting the processing space with an exhaust volume greater than that of the first gas; a second gas supply section for supplying a second gas with an oxygen concentration lower than that of the atmosphere to the gap between the peripheral wall and the cover; and a third gas supply section for supplying a third gas with an oxygen concentration lower than that of the atmosphere to the processing space inside the housing.

[0010] Invention Effects

[0011] Using this invention, a heat treatment unit, substrate processing apparatus, heat treatment method, and storage medium can be provided that can simultaneously achieve both high-efficiency recovery of sublimation products and heat treatment under low-oxygen conditions. Attached Figure Description

[0012] Figure 1 This is a schematic diagram illustrating an example of a substrate processing system.

[0013] Figure 2 This is a schematic diagram illustrating an example of a coating and developing apparatus.

[0014] Figure 3 This is a side view schematically representing an example of a heat treatment unit.

[0015] Figure 4 This is a side view schematically showing an example of a heat treatment section.

[0016] Figure 5 This is a plan view schematically representing an example of the cover of a chamber.

[0017] Figure 6 This is an enlarged schematic diagram of a portion of an example of a heat treatment section.

[0018] Figure 7 This is a plan view schematically showing a portion of the heating treatment section and an example of the gas supply section.

[0019] Figure 8 This is a side view schematically showing an example of a pin exhaust section.

[0020] Figure 9 This is a block diagram representing an example of the hardware structure of a control device.

[0021] Figure 10 This is a flowchart illustrating an example of a heat treatment method.

[0022] Figure 11 This is a flowchart illustrating an example of heat treatment.

[0023] Figure 12 (a) and (b) are schematic diagrams used to illustrate an example of a heat treatment method.

[0024] Figure 13 (a) and (b) are schematic diagrams used to illustrate an example of heat treatment.

[0025] Figure 14 (a) and (b) are schematic diagrams used to illustrate an example of heat treatment.

[0026] Figure 15 (a) is a schematic diagram used to illustrate an example of heat treatment. Figure 15 (b) is a schematic diagram used to illustrate an example of cooling treatment.

[0027] Explanation of reference numerals in the attached figures

[0028] 2… Coating-developing apparatus, U2… Heat treatment unit, W… Workpiece, 52… Heating section, 52a… Through hole, 60… Workpiece lifting section, 62… Support pin, 64… Lifting drive section, 70… Chamber, 72… Peripheral wall section, 74… Cover section, S… Processing space, g1, g2… Gap, 80… First gas supply section, 82… Head, 82a… Discharge hole, 90… Second gas supply section, 100… Third gas supply section, 110… First row Air section, 120… peripheral exhaust section, 130… central exhaust section, 140… peripheral exhaust section, 150… second exhaust section, 152… independent exhaust path, 152a… first area, 152b… second area, 154… common exhaust path, 162… first exhaust path forming part, 164… bellows, 166… second exhaust path forming part, 168… bottom, 168a… connecting hole, 170… sealing component, 200… control device. Detailed Implementation

[0029] The following describes various exemplary implementation methods.

[0030] An exemplary embodiment of the heat treatment unit includes: a heating section for supporting and heating a substrate coated with a film; a chamber having a peripheral wall and a cover, the peripheral wall surrounding the heating section and the cover covering the heating section to form a processing space on the heating section by forming a gap between the cover and the peripheral wall; a housing for housing the heating section and the chamber; a first gas supply section for supplying a first gas with an oxygen concentration lower than atmospheric pressure to the processing space; an exhaust section for exhausting the processing space at an exhaust volume greater than the supply volume of the first gas; a second gas supply section for supplying a second gas with an oxygen concentration lower than atmospheric pressure to the gap between the peripheral wall and the cover; and a third gas supply section for supplying a third gas with an oxygen concentration lower than atmospheric pressure to the outside of the chamber within the housing.

[0031] In this heat treatment unit, the exhaust volume of the exhaust section is greater than the supply volume of the first gas, thus enabling exhaust to create a negative pressure in the processing space. This allows for the efficient recovery of sublimation products generated during substrate heating from the coating process. Furthermore, a gap is formed between the peripheral wall and the cover, allowing gas to be introduced into the processing space from outside, eliminating the negative pressure. Specifically, a second gas supplied from the second gas supply section to the gap between the peripheral wall and the cover can be introduced into the processing space. Even when a larger volume of gas than the second gas supply is introduced into the processing space, the second gas from the second gas supply section and gas from outside the chamber, which is maintained in a low-oxygen state by the third gas supply section, are also introduced into the processing space. Therefore, the processing space can be maintained in a low-oxygen state. Thus, both efficient recovery of sublimation products and heat treatment under a low-oxygen state can be achieved simultaneously.

[0032] Alternatively, the venting section may have: an outer peripheral venting section for venting the processing space from an outer peripheral region outside the periphery of the substrate supported by the heated section; and a central venting section for venting the processing space from a central region inside the periphery of the substrate supported by the heated section. In the initial stage of the coating process on the substrate, which involves heating and curing, venting from the processing space has a significant impact on the film thickness; however, in the later stage of the curing process, the impact of venting from the processing space on the film thickness is smaller. In the above structure, venting from the outer peripheral region in the initial stage of the curing process can suppress the impact on the film thickness caused by venting from the processing space. Furthermore, in the later stage of the curing process, where the impact of venting from the processing space on the film thickness is less significant, venting from the central region can efficiently recover sublimates. Therefore, sublimates can be recovered efficiently, and the in-plane uniformity of the film thickness can be improved.

[0033] Alternatively, the first gas supply section may have a head with a plurality of discharge holes distributed on the surface of the head opposite the substrate supported by the heated section, allowing the first gas to be supplied to the substrate on the heated section through the plurality of discharge holes. In this case, the effect on film thickness caused by the first gas from the first gas supply section can be homogenized. Therefore, the in-plane uniformity of film thickness can be improved.

[0034] Alternatively, the peripheral wall portion can be configured such that a gap is formed between the peripheral wall portion and the heating portion. Alternatively, the exhaust portion can have a peripheral exhaust portion for venting exhaust gas from the gap between the peripheral wall portion and the heating portion into the processing space. In this case, the increase in oxygen concentration in the processing space due to gas present in the gap between the heating portion and the peripheral wall portion can be suppressed, enabling more reliable heat treatment under low-oxygen conditions.

[0035] Alternatively, at least a portion of the exhaust path included in the peripheral exhaust section and at least a portion of the gas supply path included in the second gas supply section may be arranged close to each other. In this case, the temperature rise of the second gas supplied via the gas supply path of the second gas supply section can suppress the temperature drop of the processing space caused by the second gas from the second gas supply section being drawn into the processing space.

[0036] Alternatively, the heat treatment unit may further include: a substrate lifting section having multiple support pins inserted into multiple through holes penetrating the heating section in a vertical direction, and a lifting drive section for lifting the multiple support pins; and a pin venting section for venting the processing space from the multiple through holes. In this case, when the substrate is separated from the heating section, the increase in oxygen concentration in the processing space due to gas from the through holes into which the support pins are inserted can be suppressed, enabling more reliable heat treatment under low-oxygen conditions.

[0037] Alternatively, the pin exhaust section may include: multiple independent exhaust paths connected to multiple through holes below the heating section; and a common exhaust path connected to the multiple independent exhaust paths. In this case, compared to the case where an exhaust space connected to multiple through holes is provided below the heating section to exhaust from multiple through holes, space-saving of the pin exhaust section can be achieved.

[0038] Alternatively, one of the multiple independent exhaust paths may include: a first region extending downward from a corresponding through-hole among the multiple through-holes; and a second region extending in a direction intersecting the extension direction of the first region. Alternatively, the pin exhaust portion may include: a first exhaust path forming portion for forming the first region; and a second exhaust path forming portion for forming the second region. Alternatively, one of the multiple support pins may be disposed in the first region along the extension direction of the first region in an independent exhaust path and inserted into a connecting hole provided at the bottom of the second exhaust path forming portion. Alternatively, the first exhaust path forming portion may include a bellows capable of extending and retracting along the extension direction of the first region. Alternatively, the pin exhaust portion may include a sealing member movable relative to the connecting hole, disposed in a manner that closes the connecting hole. In this case, by utilizing the bellows to absorb the contraction or expansion of the exhaust path forming portion caused by the temperature rise of the heating element, and by using the sealing member to close the connecting hole connected to the lower end of the independent exhaust path, it is possible to prevent gases that are not low-oxygen from flowing into the processing space via the independent exhaust path.

[0039] Alternatively, the coating can be formed by applying a treatment solution to the surface of a substrate. In this case, sublimations generated due to the temperature rise of the coating can be recovered efficiently, and the properties of the coating can be improved by heat treatment under low oxygen conditions.

[0040] An exemplary embodiment of the substrate processing apparatus includes: the aforementioned heat treatment unit; and a control unit for controlling the heat treatment unit. The control unit is capable of controlling the heat treatment unit to switch the heat treatment unit from a first state to a second state. In the first state, the heat treatment unit exhausts the processing space with an exhaust volume less than the sum of the supply volume of the first gas and the supply volume of the second gas. In the second state, the heat treatment unit exhausts the processing space with an exhaust volume greater than the sum of the supply volume of the first gas and the supply volume of the second gas.

[0041] It takes time for the oxygen concentration in the area outside the processing space and gap within the housing to reach the same level as that inside the processing space. However, if substrate heating begins after the standby period until a sufficiently low oxygen concentration is reached in the area outside the processing space and gap, the efficiency of substrate processing decreases. In the above structure, in the first state, the processing space can be vented at a rate that prevents gas other than the second gas from the second gas supply unit from entering the processing space. Furthermore, in the second state after switching from the first state, gas that has reached a sufficiently low oxygen level can be introduced into the processing space from the area outside the gap and processing space. Therefore, the efficiency of substrate processing, including processes involving heating the substrate under low oxygen conditions, can be improved.

[0042] Alternatively, the venting section may have: an outer peripheral venting section for venting the processing space from an outer peripheral region outside the periphery of the substrate supported by the heated section; and a central venting section for venting the processing space from a central region inside the periphery of the substrate supported by the heated section. Alternatively, the control unit may control the venting section such that, in a first state, at least the outer peripheral venting section vents the processing space, and in a second state, at least the central venting section vents the processing space. In this case, during the initial stage of the curing process of the coating on the substrate, venting the processing space from the outer peripheral region in the first state can suppress the influence of venting on the film thickness. On the other hand, during the later stage of the curing process where the influence of venting on the film thickness is less, venting from the central region in the second state can efficiently recover sublimates. Therefore, sublimates can be recovered efficiently, and the in-plane uniformity of the film thickness can be improved.

[0043] An exemplary embodiment of the heat treatment method includes: a heating step in which a substrate with a coating is heated in a processing space using a heating unit, wherein the processing space is formed by a chamber on the heating unit, the chamber having a peripheral wall portion and a cover portion, the peripheral wall portion surrounding the heating unit, and the cover portion being disposed such that a gap is formed between the cover portion and the peripheral wall portion; a first gas supply step in which a first gas with an oxygen concentration lower than atmospheric pressure is supplied to the processing space; an exhaust step in which the processing space is exhausted with an exhaust volume greater than the first gas supply volume; a second gas supply step in which a second gas with an oxygen concentration lower than atmospheric pressure is supplied to the gap between the peripheral wall portion and the cover portion; and a third gas supply step in which a third gas with an oxygen concentration lower than atmospheric pressure is supplied to the outside of the chamber within a housing housing the heating unit and the chamber. In this heat treatment method, similar to the heat treatment unit described above, both highly efficient recovery of sublimation and heat treatment under low-oxygen conditions can be achieved simultaneously.

[0044] An exemplary embodiment of the storage medium is a computer-readable storage medium that stores a program for causing the device to perform the heat treatment method described above.

[0045] Hereinafter, one embodiment will be described with reference to the accompanying drawings. In the following description, the same reference numerals will be used to denote the same elements or elements having the same function, and repeated descriptions will be omitted.

[0046] Figure 1 The substrate processing system 1 shown is a system for forming a photosensitive coating on a workpiece W, exposing the photosensitive coating, and developing the photosensitive coating. The workpiece W, the object of processing, is, for example, a substrate, or a substrate that has been formed into a film or circuit through a prescribed process. As an example, the substrate included in the workpiece W is a silicon-containing wafer. The workpiece W (substrate) can be formed in a circular shape. The workpiece W, the object of processing, can also be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or an intermediate obtained by performing a prescribed process on these substrates. The photosensitive coating is, for example, a resist film.

[0047] The substrate processing system 1 includes a coating-developing apparatus 2 and an exposure apparatus 3. The coating-developing apparatus 2 is used to coat the surface of the workpiece W with a photoresist (solution) to form a photoresist film before the exposure process in the exposure apparatus 3, and to develop the photoresist film after the exposure process. The exposure apparatus 3 is used to expose the photoresist film (photosensitive coating) formed on the workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates the exposed portion of the photoresist film with energy rays using methods such as immersion exposure.

[0048] [Substrate Processing Device]

[0049] The structure of the coating-developing apparatus 2 will now be described as an example of a substrate processing apparatus. Figure 1 and Figure 2 As shown, the coating-developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 200 (control unit).

[0050] The carrier block 4 is capable of importing workpiece W into and exporting workpiece W from the coating-developing apparatus 2. For example, the carrier block 4 can support multiple carriers C for workpiece W and includes a built-in conveyor A1 with a transfer arm. The carriers C can accommodate, for example, multiple circular workpieces W. The conveyor A1 can remove workpiece W from the carriers C and transfer it to the processing block 5, and can receive workpiece W from the processing block 5 and return it to the carriers C. The processing block 5 has processing modules 11, 12, 13, and 14.

[0051] Processing module 11 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveying device A3 for conveying workpiece W to these units. Processing module 11 can form a lower layer film on the surface of workpiece W using the liquid treatment unit U1 and the heat treatment unit U2. For example, a SOC (Spin On Carbon) film can be used as the lower layer film. The liquid treatment unit U1 is used to apply a processing liquid for lower layer film formation onto the workpiece W. The heat treatment unit U2 is used to perform various heat treatments associated with the formation of the lower layer film. For example, the heat treatment unit U2 can heat-treat the coating film (coating) formed by applying the SOC film forming processing liquid to the surface of the workpiece W. By heating the coating film with the SOC film forming processing liquid, the coating film can be cured through a cross-linking reaction within the coating film. Thus, an SOC film is formed on the surface of the workpiece W.

[0052] Processing module 12 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveying device A3 for conveying workpiece W to these units. Processing module 12 can form a resist film on a lower film using the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 is used to form a coating of the resist film on the surface of the workpiece W by applying a treatment liquid for resist film formation onto the lower film. The heat treatment unit U2 is used to perform various heat treatments associated with the formation of the resist film.

[0053] Processing module 13 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveying device A3 for conveying workpiece W to these units. Processing module 13 is capable of forming an upper film on a resist film using the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 is used to apply a treatment liquid for upper film formation onto the resist film. The heat treatment unit U2 is used to perform various heat treatments associated with the formation of the upper film.

[0054] Processing module 14 includes a liquid treatment unit U1, a heat treatment unit U2, and a conveying device A3 for conveying workpiece W to these units. Processing module 14 can perform development treatment of the photoresist film that has undergone exposure treatment and heat treatment associated with the development treatment using the liquid treatment unit U1 and the heat treatment unit U2. The liquid treatment unit U1 is used to apply a developer solution to the surface of the exposed workpiece W, and then clean it with a rinsing solution, thereby performing the development treatment of the photoresist film. The heat treatment unit U2 is used to perform various heat treatments associated with the development treatment. Specific examples of heat treatment include post-exposure bake (PEB) and post-bake (PB).

[0055] A shelf unit U8 is provided on the side of the carrier block 4 within processing block 5. The shelf unit U8 is divided into multiple small compartments arranged in the vertical direction. A conveying device A7, including a lifting arm, is provided near the shelf unit U8. The conveying device A7 is used to lift and lower the workpiece W between the compartments of the shelf unit U8.

[0056] A shelf unit U9 is provided on the interface block 6 side within processing block 5. The shelf unit U9 is divided into multiple small compartments arranged in the vertical direction.

[0057] Interface block 6 is used for the transfer of workpiece W between interface block 6 and exposure device 3. For example, interface block 6 has a built-in conveyor A8 including a transfer arm, which is connected to exposure device 3. Conveyor A8 can transfer workpiece W arranged on shelf unit U9 to exposure device 3. Conveyor A8 can receive workpiece W from exposure device 3 and return it to shelf unit U9.

[0058] The control device 200 controls the coating-developing device 2 to perform coating-developing processing, for example, according to the following process. First, the control device 200 controls the conveying device A1 to transport the workpiece W in the carrier C to the shelf unit U8, and controls the conveying device A7 to place the workpiece W into the chamber for the processing module 11.

[0059] Next, the control device 200 controls the conveying device A3 to transport the workpiece W from the shelf unit U8 to the liquid treatment unit U1 and the heat treatment unit U2 within the processing module 11. Furthermore, the control device 200 controls the liquid treatment unit U1 and the heat treatment unit U2 to form a lower film (e.g., a SOC film) on the surface of the workpiece W. Afterward, the control device 200 controls the conveying device A3 to return the workpiece W with the lower film formed to the shelf unit U8, and controls the conveying device A7 to place the workpiece W into a chamber for the processing module 12.

[0060] Next, the control device 200 controls the conveying device A3 to transport the workpiece W from the shelf unit U8 to the liquid treatment unit U1 and the heat treatment unit U2 within the processing module 12. Furthermore, the control device 200 controls the liquid treatment unit U1 and the heat treatment unit U2 to form a resist film on the surface of the workpiece W. Afterward, the control device 200 controls the conveying device A3 to return the workpiece W to the shelf unit U8, and controls the conveying device A7 to place the workpiece W into the chamber of the processing module 13.

[0061] Next, the control device 200 controls the conveying device A3 to transport the workpiece W from the shelf unit U8 to the respective units within the processing module 13. Additionally, the control device 200 controls the liquid treatment unit U1 and the heat treatment unit U2 to form an upper film on the resist film of the workpiece W. Afterward, the control device 200 controls the conveying device A3 to transport the workpiece W to the shelf unit U9.

[0062] Next, the control device 200 controls the conveying device A8 to send the workpiece W from the shelf unit U9 to the exposure device 3. After that, the control device 200 controls the conveying device A8 to receive the workpiece W that has undergone exposure treatment from the exposure device 3 and place it in the chamber of the processing module 14 of the shelf unit U9.

[0063] Next, the control device 200 controls the conveying device A3 to transport the workpiece W from the shelf unit U9 to the respective units within the processing module 14, and controls the liquid treatment unit U1 and the heat treatment unit U2 to perform a developing process on the resist film of the workpiece W. Afterwards, the control device 200 controls the conveying device A3 to return the workpiece W to the shelf unit U8, and controls the conveying devices A7 and A1 to return the workpiece W to the carrier C. Through the above steps, the coating-developing process for one workpiece W is completed. After the coating-developing process, an etching process can be performed on the surface of the workpiece W using a lower layer film such as the SOC film as a mask. The control device 200 performs the coating-developing process on multiple workpieces W in the same manner as described above using the coating-developing device 2.

[0064] The specific structure of the substrate processing apparatus is not limited to the structure of the coating-developing apparatus 2 illustrated above. The substrate processing apparatus can have any structure as long as it includes a heat treatment unit for heat treatment of the coating of the processing solution and a control device for controlling the heat treatment unit.

[0065] (Heat Treatment Unit)

[0066] Next, refer to Figures 3-8 A detailed description of an example of the heat treatment unit U2 of the processing module 11 will be provided. Figure 3 The heat treatment unit U2 shown can be set up in an atmospheric atmosphere. The heat treatment unit U2 is configured to perform heat treatment on the workpiece W in a low-oxygen atmosphere surrounding the workpiece W. In this invention, "low-oxygen atmosphere (state)" refers to an atmosphere (state) with an oxygen concentration lower than that of the atmosphere.

[0067] In one example, heat treatment unit U2 heat-treats workpiece W under a low-oxygen environment with an oxygen concentration of 400 ppm or less. The oxygen concentration in the atmosphere surrounding workpiece W during heat treatment in heat treatment unit U2 can be 200 ppm or less, 100 ppm or less, or 50 ppm or less. For example, by heat-treating the coating (coating film) of the processing liquid used to form the SOC film under a low-oxygen atmosphere, the density of the SOC film cured by heat treatment is improved, and the resistance (difficulty of etching) in the etching process after coating-development treatment is increased.

[0068] Depend on Figure 3 The heat treatment performed by the heat treatment unit U2 shown includes: a heating treatment that applies heat to the workpiece W (coating) to be treated; and a cooling treatment that cools the workpiece W (coating) after the heating treatment. The heat treatment unit U2 includes, for example, a receiving section 20; a cooling treatment section 30; a heating treatment section 50; and a conveying section 190 for conveying the workpiece W between the cooling treatment section 30 and the heating treatment section 50.

[0069] The housing 20 is used to house the components of the heat treatment unit U2. The housing 20 includes, for example, a housing 22, a base plate 24, a shutter 26, and a shutter drive 28. The housing 22 is a container for housing a portion of the cooling treatment unit 30, a portion of the heating treatment unit 50, and the conveying unit 190. The housing 22 is, for example, formed in a cuboid shape. The bottom wall of the housing 22 can be placed on a horizontal surface (e.g., the bottom surface) within the processing module 11. When viewed from above, the housing 22 may have a rectangular shape.

[0070] The base plate 24 divides the space formed by the housing 22 into an upper region V1 and a lower region V2 arranged vertically. Heating and cooling processes are performed in the upper region V1, while drive devices for driving various components are housed in the lower region V2. The base plate 24 can be a cooling plate with heat insulation (e.g., a water-cooled plate). In one example, the base plate 24 is made of metal and has internal cooling channels for the flow of cooling water.

[0071] When viewed from above, a feed inlet 22a for feeding and unloading workpiece W is formed on the side wall at one end along the length direction of the housing 22. A gate 26 is configured to open and close this feed inlet 22a. A gate drive unit 28 can move the gate 26 vertically using a power source such as an electric motor. The gate drive unit 28 can move the gate 26 between a position where the feed inlet 22a is closed and a position where the feed inlet 22a is not closed.

[0072] The cooling treatment unit 30 performs a cooling process on the workpiece W in the upper region V1. The cooling treatment unit 30 is disposed within the housing 22 along its length at a position closer to the feed inlet 22a than the side wall opposite to the side wall where the feed inlet 22a is located. Figure 3 In the example shown, the feed inlet 22a, cooling treatment unit 30, and heating treatment unit 50 are arranged sequentially along the length direction. The cooling treatment unit 30 includes, for example, a cooling plate 32, a workpiece lifting unit 34, and a gas supply unit 40.

[0073] The cooling plate 32 is a plate that holds and cools the workpiece W after it has been heated by the heat treatment unit 50. The cooling plate 32 may be formed in a generally circular plate shape. The cooling plate 32 is made of metals with high thermal conductivity, such as aluminum, silver, or copper. A cooling flow path is provided inside the cooling plate 32 for the flow of cooling water or cooling gas to lower the temperature of the workpiece W.

[0074] The workpiece lifting unit 34 is used to lift the workpiece W above the cooling plate 32. For example, the workpiece lifting unit 34 lifts the workpiece W between a processing position and a handover position. The processing position is the position where the workpiece W is placed on the support surface 32a (upper surface of the cooling plate 32) of the cooling plate 32, and the handover position is the position where the workpiece W is handed over to the conveyor unit 190, etc., above the cooling plate 32 at a distance. The workpiece lifting unit 34 has a plurality of (e.g., 3) support pins 36 and a lifting drive unit 38.

[0075] Support pins 36 are used to support workpiece W from below. Support pins 36 are inserted into through holes formed in the cooling plate 32 and are configured to extend in the vertical direction. Multiple support pins 36 are arranged at equal intervals around the center of the cooling plate 32. A lifting drive unit 38 can raise and lower the multiple support pins 36 using a power source such as an electric motor or a lifting cylinder. For example, the lifting drive unit 38 raises the support pins 36 so that the upper ends of the support pins 36 protrude upwards from the support surface 32a of the cooling plate 32, thereby raising the workpiece W to the junction position. Alternatively, the lifting drive unit 38 lowers the support pins 36 so that the upper ends of the support pins 36 are located below the support surface 32a, thereby lowering the workpiece W to the processing position (placing the workpiece W on the support surface 32a of the cooling plate 32). The lifting drive unit 38 is provided on the base plate 24.

[0076] In order to maintain a low-oxygen state in the space surrounding the cooling plate 32 during the cooling process of workpiece W, the gas supply unit 40 supplies a gas with an oxygen concentration lower than that of the atmosphere to the space surrounding the cooling plate 32. For example, the gas supply unit 40 supplies a gas with an oxygen concentration lower than that of the atmosphere (a low-oxygen gas) to the support surface 32a of the cooling plate 32. The low-oxygen gas supplied by the gas supply unit 40 can be any type of gas as long as its oxygen concentration is lower than that of the atmosphere. As a specific example of a low-oxygen gas supplied by the gas supply unit 40, an inert gas (e.g., nitrogen) can be given. The gas supply unit 40 includes, for example, a head 42, a supply path 44, a gas source 46, and a switching valve 48.

[0077] The head 42 is positioned above the cooling plate 32 and is capable of discharging low-oxygen gas from above onto the cooling plate 32 (the workpiece W on the cooling plate 32). For example, the head 42 can discharge gas from above onto approximately the entire surface of the support surface 32a of the cooling plate 32. A horizontally extending discharge space is formed within the head 42, and a plurality of discharge holes 42a are formed on the lower surface of the head 42 (the surface opposite the cooling plate 32), penetrating between the discharge space and the space outside the head 42. The plurality of discharge holes 42a can be distributed on the lower surface of the head 42.

[0078] The heat treatment unit 50 is used to heat the workpiece W in the upper region V1. The heat treatment unit 50 is arranged side by side with the cooling treatment unit 30 along the length of the housing 22. The heat treatment unit 50 includes, for example, a heating unit 52, a workpiece lifting unit 60 (substrate lifting unit), and a chamber 70.

[0079] The heating section 52 is used to support the workpiece W with the coating formed thereon and to heat it. Specifically, as follows: Figure 4 As shown, the heating element 52 supports the back side Wb of a workpiece W on which a coating film of processing liquid is formed on the front side Wa, and heats the supported workpiece W. The heating element 52 is disposed within the housing 22 (within the upper region V1). The heating element 52 includes, for example, a hot plate 54, a heat insulation plate 56, and a supporting bottom wall 58. The supporting bottom wall 58, the heat insulation plate 56, and the hot plate 54 are stacked sequentially from bottom to top.

[0080] The hot plate 54 has a support surface 54a for placing the workpiece W and is capable of transferring heat to the supported workpiece W. A heater 54b is disposed inside the hot plate 54. The hot plate 54 is made of a metal with high thermal conductivity, such as aluminum, silver, or copper. The hot plate 54 is formed in a circular plate shape and is arranged horizontally with the support surface 54a (upper surface). The diameter of the hot plate 54 is larger than the diameter of the workpiece W.

[0081] The heat insulation plate 56 supports the back side of the hot plate 54 opposite to the supporting surface 54a, blocking heat from the hot plate 54 from being transferred downwards. The heat insulation plate 56, like the hot plate 54, is circular, and its diameter is the same as that of the hot plate 54. The supporting bottom wall 58 is also circular, and its diameter is larger than that of the hot plate 54 (heat insulation plate 56). The supporting bottom wall 58 supports both the hot plate 54 and the heat insulation plate 56. The supporting bottom wall 58 is spaced apart above the base plate 24. Alternatively, the supporting bottom wall 58 can be connected (fixed) to the base plate 24 via a fixing member (not shown).

[0082] The workpiece lifting unit 60 is used to lift and lower the workpiece W above the hot plate 54. For example, the workpiece lifting unit 60 lifts and lowers the workpiece W between a processing position and a transfer position. The processing position is where the workpiece W is placed on the support surface 54a of the hot plate 54, and the transfer position is where the workpiece W is transferred between the workpiece W and the conveying unit 190, spaced apart from the hot plate 54. Figure 3 As shown, the workpiece lifting part 60 has multiple (e.g., 3) support pins 62 and a lifting drive part 64.

[0083] Support pin 62 is a pin used to support workpiece W from below. Multiple support pins 62 are formed to extend in the vertical direction. For example... Figure 4 As shown, multiple support pins 62 are respectively inserted into multiple through holes 52a provided in the heating section 52. That is, each support pin 62 is inserted into a corresponding through hole 52a among the multiple through holes 52a. The through holes 52a are formed such that they penetrate the heating plate 54, the heat insulation plate 56, and the support bottom wall 58 respectively in the vertical direction. The multiple support pins 62 (multiple through holes 52a) are arranged at equal intervals around each other in the circumferential direction around the center CP of the heating plate 54 (see also...). Figure 7 ).

[0084] Figure 3 The lifting drive unit 64 shown can use a power source such as an electric motor or a lifting cylinder to raise and lower multiple support pins 62. For example, the lifting drive unit 64 raises the support pins 62 so that the upper end of the support pin 62 protrudes upwards from the support surface 54a of the heat plate 54, thereby raising the workpiece W to the junction position. Alternatively, the lifting drive unit 64 lowers the support pins 62 so that the upper end of the support pin 62 is located below the support surface 54a, thereby lowering the workpiece W to the processing position (so that the workpiece W is placed on the support surface 54a of the heat plate 54). The lifting drive unit 64 is disposed in the lower region V2, below the base plate 24. Each support pin 62 is also inserted into a through hole provided on the base plate 24.

[0085] like Figure 4As shown, the chamber 70 covers the periphery and top of the heating part 52 (particularly the hot plate 54). The chamber 70 has a peripheral wall portion 72 and a cover portion 74. The peripheral wall portion 72 surrounds the periphery (side) of the heating part 52. The peripheral wall portion 72 extends upward from the periphery of the supporting bottom wall 58 of the heating part 52, forming an annular shape. The height (vertical length) of the peripheral wall portion 72 can be greater than the combined height of the hot plate 54 and the heat insulation plate 56. The side surfaces (circumferential surfaces) of the hot plate 54 and the heat insulation plate 56 are opposite to the peripheral wall portion 72. The peripheral wall portion 72 is configured such that a gap g1 is formed between the peripheral wall portion 72 and the heating part 52 (more specifically, the hot plate 54 and the heat insulation plate 56). The gap g1 (the space between the peripheral wall portion 72 and the heating part 52) ​​is formed in an annular shape to surround the entire circumference of the hot plate 54 (see also). Figure 7 ).

[0086] The cover 74 covers the heating part 52 (more specifically, the workpiece W supported by the hot plate 54) with a gap g2 formed between the cover 74 and the peripheral wall 72. Because the cover 74 does not contact the peripheral wall 72, the generation of foreign matter associated with contact between these parts can be prevented. The cover 74 covers the workpiece W on the hot plate 54, thereby forming a processing space S for heating above the hot plate 54. The processing space S is a space that is enclosed to the extent that the coating formed on the workpiece W can be sufficiently heated, with a portion of it connected to the outside space via the aforementioned gap g2. The cover 74 is provided within the housing 22 in a manner that allows it to move in the vertical direction.

[0087] like Figure 3 As shown, the heat treatment unit 50 includes a lifting drive unit 68 for moving the cover 74 in the vertical direction. The lifting drive unit 68 is disposed in the lower region V2, and can move the cover 74 in the vertical direction using a power source such as an electric motor. By lowering the cover 74 to near the peripheral wall 72 using the lifting drive unit 68, a processing space S can be formed using the cover 74. By raising the cover 74 (away from the peripheral wall 72) using the lifting drive unit 68 to a degree where the workpiece W cannot be sufficiently heated, the space above the hot plate 54 can be opened to the upper region V1.

[0088] like Figure 4 As shown, the cover 74 includes, for example, a top plate 76 and a side wall 78. The top plate 76 is formed as a circular plate with the same diameter as the supporting bottom wall 58. The top plate 76 is arranged opposite to the supporting surface 54a of the hot plate 54 in the vertical direction. That is, the top plate 76 covers the supporting surface 54a from above. The side wall 78 is an annular member formed extending downward from the outer edge of the top plate 76, and is arranged opposite to the peripheral wall portion 72 in the vertical direction. The annular side wall 78 surrounds the supporting surface 54a of the hot plate 54.

[0089] With the cover 74 close to the peripheral wall 72, a gap g2 is formed between the lower end of the side wall 78 and the upper end of the peripheral wall 72. The gap g2 (the space between the side wall 78 and the peripheral wall 72) is formed in an annular shape to surround the hot plate 54 (processing space S). The gap g2 is connected to the processing space S, and the spacing of the inner ends g21 of the gap g2 near the processing space S is narrower than the spacing of the outer ends g22 away from the processing space S (see reference). Figure 6 ).

[0090] In order to maintain the processing space S in a low-oxygen atmosphere during the heat treatment of workpiece W, the heat treatment unit 50 also includes a gas supply unit for supplying low-oxygen gas. Specifically, the heat treatment unit 50 also includes a first gas supply unit 80, a second gas supply unit 90, and a third gas supply unit 100.

[0091] Figure 4 The first gas supply unit 80 shown is used to supply a gas with an oxygen concentration lower than that of the atmosphere to the processing space S. The low-oxygen gas supplied by the first gas supply unit 80 (hereinafter referred to as the "first gas") can be any type of gas as long as its oxygen concentration is lower than that of the atmosphere. A specific example of the first gas is an inert gas (e.g., nitrogen). When the processing space S is formed, by continuously supplying the first gas from the first gas supply unit 80, the processing space S becomes a low-oxygen state. The first gas supply unit 80, for example, has a head 82, a supply path 84, a gas source 86, and a switching valve 88.

[0092] The head 82 forms part of the cover 74 (top plate 76). The head 82 is capable of discharging gas from above onto the workpiece W on the hot plate 54 within the processing space S in the chamber 70. For example, the head 82 is capable of discharging a first gas onto approximately the entire front surface Wa of the workpiece W. A discharge space extending in a horizontal plane is formed within the head 82, and a plurality of discharge holes 82a are formed on the lower surface of the top plate 76 (the surface of the head 82 opposite to the workpiece W on the hot plate 54) that penetrate between the discharge space and the processing space S.

[0093] Figure 5 Indicates viewing from below Figure 4 A schematic diagram of the illustrated cover 74. (See diagram below.) Figure 5 As shown, a plurality of discharge holes 82a are distributed on the lower surface of the top plate 76. The plurality of discharge holes 82a are distributed at a substantially uniform density in the portion of the lower surface of the top plate 76 opposite to the workpiece W on the hot plate 54 (hereinafter referred to as the "opposite portion"). The plurality of discharge holes 82a are dispersedly arranged in the opposite portion.

[0094] The opening areas of the multiple discharge holes 82a can be approximately the same. When the opening areas of the multiple discharge holes 82a are approximately the same, the multiple discharge holes 82a can be distributed in a manner where the proportion of the opening area of ​​the discharge holes 82a per unit area of ​​the relative portions is uniform. Viewed from below, the shape of the discharge holes 82a can be circular or elliptical. The multiple discharge holes 82a can be distributed in a manner where the interval between adjacent discharge holes 82a is approximately constant. As an example, when the multiple discharge holes 82a are arranged in a two-dimensional arrangement along both the transverse and longitudinal directions, the interval between adjacent discharge holes 82a in the transverse direction can be uniform, and the interval between adjacent discharge holes 82a in the longitudinal direction can also be uniform.

[0095] Return to Figure 4 Multiple discharge ports 82a are connected to the supply path 84 via a discharge space. A gas source 86, serving as the supply source of the first gas, can supply the first gas to the discharge space via the supply path 84. A switching valve 88 is provided on the supply path 84 to switch the on / off state of the supply path 84. When the switching valve 88 is in the open state, the first gas is supplied (discharged) from the multiple discharge ports 82a; when the switching valve 88 is in the closed state, the supply of the first gas from the multiple discharge ports 82a stops.

[0096] Figure 6 This illustrates an example of a second gas supply unit 90. The second gas supply unit 90 supplies a gas with an oxygen concentration lower than atmospheric pressure to the gap g2 between the peripheral wall portion 72 and the cover portion 74. The low-oxygen gas supplied by the second gas supply unit 90 (hereinafter referred to as the "second gas") can be any type of gas as long as its oxygen concentration is lower than atmospheric pressure. A specific example of the second gas is an inert gas (e.g., nitrogen). The second gas supplied from the second gas supply unit 90 to the gap g2 flows into the processing space S via the inner end g21 of the gap g2, or flows into the area outside the chamber 70 (located within the upper region V1 and outside the processing space S and the gap g2) via the outer end g22 of the gap g2. When, as described above, the opening of end g21 is smaller than the opening of end g22, the second gas supplied to the gap g2 flows more easily into the area outside the chamber 70 compared to the processing space S. The second gas supply unit 90 includes, for example, a gas discharge unit 92, a supply path 94, a gas source 96, and a switching valve 98.

[0097] A gas discharge section 92 is provided at the upper end of the peripheral wall portion 72, enabling the discharge of a second gas from the interior of the peripheral wall portion 72 into the gap g2. The gas discharge section 92 includes a plurality of discharge holes 92a and a supply path 92b (gas supply path). The plurality of discharge holes 92a are provided on the upper end face of the peripheral wall portion 72. The plurality of discharge holes 92a are arranged at predetermined intervals along the circumference of the center CP of the heating plate 54 (see reference). Figure 7The supply path 92b is located inside the upper end of the peripheral wall portion 72 and is formed in a ring shape extending circumferentially along the center CP of the heating plate 54. The supply path 92b is connected to the gap g2 via a plurality of discharge holes 92a. The second gas supplied to the supply path 92b is discharged to the gap g2 through the plurality of discharge holes 92a.

[0098] The supply path 92b inside the peripheral wall portion 72 is connected to the supply path 94 extending to the outside of the peripheral wall portion 72. The gas source 96, serving as the supply source of the second gas, can supply the second gas to multiple discharge ports 92a via the supply paths 94 and 92b. A switching valve 98 is provided on the supply path 94 to switch the on / off state of the supply path 94. When the switching valve 98 is in the open state, the second gas is supplied (discharged) from the multiple discharge ports 92a; when the switching valve 98 is in the closed state, the supply of the second gas from the multiple discharge ports 92a stops.

[0099] Figure 3 or Figure 7 The third gas supply unit 100 shown is used to supply a gas with an oxygen concentration lower than atmospheric pressure to the area outside the processing space S within the housing 22. Specifically, the third gas supply unit 100 supplies a low-oxygen gas to the space outside the chamber 70 in the upper region V1 (outside the processing space S and the gap g2). The low-oxygen gas supplied by the third gas supply unit 100 (hereinafter referred to as the "third gas") can be any type of gas as long as its oxygen concentration is lower than atmospheric pressure. As a specific example of the third gas, an inert gas (e.g., nitrogen) can be given. The third gas supply unit 100 supplies the third gas such that the periphery of the chamber 70 in the upper region V1 is filled with the third gas (the periphery of the chamber 70 becomes a low-oxygen state). The third gas supply unit 100 includes, for example, a head 102, a supply path 104, a gas source 106, and a switching valve 108.

[0100] The head 102 is disposed above the chamber 70 (cover 74). The head 102 is positioned between the chamber 70 and the cooling treatment section 30 in the direction in which the heat treatment section 50 and the cooling treatment section 30 are arranged. Figure 7 As shown, the head 102 is formed in a rod shape, extending in a direction orthogonal to both the direction in which the heat treatment section 50 and the cooling treatment section 30 are arranged and the vertical direction. The cross-section of the head 102 orthogonal to the extending direction is quadrilateral (e.g., square). A discharge space extending in its extending direction is formed within the head 102. On one side of the head 102 (the side of the head 102 opposite to the side facing the cooling treatment section 30), a plurality of discharge holes 102a are formed, penetrating between the discharge space and the upper region V1. The plurality of discharge holes 102a are arranged at predetermined intervals along the extending direction of the head 102.

[0101] Multiple discharge ports 102a are connected to the supply path 104 via discharge spaces within the head 102. A gas source 106, serving as the supply source of the third gas, can supply the third gas to the discharge spaces within the head 102 via the supply path 104. A switching valve 108 is provided on the supply path 104 to switch the on / off state of the supply path 104. When the switching valve 108 is in the open state, the third gas is supplied (discharged) from the multiple discharge ports 102a; when the switching valve 108 is in the closed state, the supply of the third gas from the multiple discharge ports 102a is stopped.

[0102] As mentioned above, in Figure 3 In the illustrated heat treatment unit U2, a gas supply unit 40 is provided to create a low-oxygen environment around the workpiece W during cooling treatment, and a first gas supply unit 80, a second gas supply unit 90, and a third gas supply unit 100 are provided to create a low-oxygen environment around the workpiece W during heat treatment. The first gas, the second gas, the third gas, and the low-oxygen gas from the gas supply unit 40 (hereinafter referred to as the "fourth gas") can be gases of the same type. When using gases of the same type, the concentrations of the main component of the low-oxygen gas (e.g., nitrogen) can be the same or different. When using gases of the same type with the same concentration of the main component, the four gas supply units can share a single gas source.

[0103] To recover sublimations generated during the heat treatment of workpiece W, or to maintain a low-oxygen environment in the processing space S, the heat treatment unit 50 also includes an exhaust unit for venting the processing space S. Specifically, as... Figure 4 As shown, the heat treatment unit 50 also includes a first exhaust unit 110 and a second exhaust unit 150.

[0104] The first exhaust section 110 (exhaust section) is used to exhaust the gas present in the processing space S to the outside of the processing space S (outside the housing 22). The first exhaust section 110 is configured to exhaust the processing space S with an exhaust volume (gas discharged per unit time) that is greater than the supply volume (supply volume per unit time) of the first gas from the first gas supply section 80. The first exhaust section 110 has, for example, an outer peripheral exhaust section 120, a central exhaust section 130, and a peripheral exhaust section 140.

[0105] The peripheral exhaust section 120 is used to exhaust gas from the outer peripheral region of the workpiece W supported by the heated section 52 (hot plate 54) to the processing space S. The peripheral exhaust section 120 includes, for example, multiple exhaust holes 122, an exhaust path 124, and a switching valve 126. The multiple exhaust holes 122 are provided on the outside of the first gas supply section 80, and the peripheral exhaust section 120 can exhaust gas from the processing space S from above the processing space S to outside the housing 22 via the multiple exhaust holes 122 and the exhaust path 124. Figure 5 As illustrated, a plurality of vent holes 122 are provided on the outer side of the head 82 of the first gas supply section 80.

[0106] Multiple vents 122 are provided within the top plate 76 of the cover 74, each opening on the outer periphery of the lower surface of the top plate 76 (i.e., the outer periphery of the upper surface in the processing space S). The multiple vents 122 are arranged in a ring around the outer side of the head 82. Viewed from above, the multiple vents 122 are located on the outer side of the periphery Wc of the workpiece W on the hot plate 54. In other words, viewed from above, the multiple vents 122 do not overlap with the workpiece W on the hot plate 54. The shape of the vents 122 within the top plate 76 is not particularly limited.

[0107] An exhaust pump is installed on the exhaust path 124, which uses suction to discharge gas from the processing space S to the outside of the housing 22 through multiple exhaust holes 122. A switching valve 126 is installed on the exhaust path 124 to switch the on / off state of the exhaust path 124. When the switching valve 126 is in the open state, gas is discharged from the processing space S through the multiple exhaust holes 122; when the switching valve 126 is in the closed state, the discharge of gas from the processing space S through the multiple exhaust holes 122 is stopped.

[0108] The central exhaust section 130 is used to exhaust gas upward from a central region located inside the periphery Wc of the workpiece W supported by the heated section 52, within the processing space S. Viewed from above, the outer edge of this central region is, for example, defined by a circle with a radius approximately half that of the workpiece W. However, the central region is not limited to this; for example, it can be configured to exhaust gas from a position approximately half that of the workpiece W, outside the radius of the central exhaust section 130. The central exhaust section 130 includes, for example, an exhaust port 132, an exhaust path 134, and a switching valve 136.

[0109] An exhaust port 132 is located at the head 82 of the first gas supply section 80, and the center CP of the hot plate 54 is located within the exhaust port 132. This can be as follows: Figure 5As illustrated, the center of the vent 132 is approximately aligned with the center CP of the hot plate 54. Alternatively, in the central region, the center of the vent 132 may be off-center relative to the center CP of the hot plate 54. Furthermore, the central vent portion 130 may have multiple vents in the head 82, in addition to a single vent 132, located in a region opposite to the aforementioned central region, in addition to a single vent 132. The multiple vents (e.g., four vents) may be arranged at equal intervals along the circumference of the center CP.

[0110] The vent 132 is provided in the head 82 in such a way that it opens into the processing space S. Specifically, the vent 132 is provided in the top plate 76 containing the head 82, and opens in the center of the lower surface of the top plate 76. The shape of the vent 132 in the top plate 76 containing the head 82 is not particularly limited. As an example, the shape of the vent 132 when viewed from above is circular or elliptical. The size (diameter) of the vent 132 can be larger than the size (diameter) of the discharge hole 82a of the first gas supply section 80, or larger than the vent 132 of the outer peripheral vent section 120. The central vent section 130 can discharge the gas in the processing space S from the top of the processing space S to outside the housing 22 through the vent 132 and the exhaust path 134 in the central region of the processing space S.

[0111] An exhaust pump is installed on the exhaust path 134, which can use the suction of the exhaust pump to discharge the gas in the processing space S to the outside of the housing 22 through the exhaust port 132. A switching valve 136 is installed on the exhaust path 134 to switch the on / off state of the exhaust path 134. When the switching valve 136 is in the open state, the gas in the processing space S is discharged from the exhaust port 132; when the switching valve 136 is in the closed state, the discharge of gas in the processing space S through the exhaust port 132 is stopped.

[0112] The peripheral exhaust section 140 is used to exhaust gas from the gap g1 between the peripheral wall section 72 and the heating section 52 (hot plate 54) into the processing space S. The peripheral exhaust section 140 can exhaust gas from the upper end of the gap g1 (the end at the opening of the processing space S). Figure 6 As shown, the peripheral exhaust section 140 has, for example, exhaust paths 142 and 144 and a switching valve 146.

[0113] The exhaust path 142 is provided inside the peripheral wall portion 72 and is formed in a ring shape extending circumferentially along the center CP of the heating plate 54. The gap g1 and the exhaust path 142 are connected by a plurality of exhaust holes 142a opening in the gap g1. The plurality of exhaust holes 142a are provided on the inner circumferential surface of the peripheral wall portion 72 and arranged at predetermined intervals along the circumferential direction. Inside the peripheral wall portion 72, the exhaust path 142 is disposed below the supply path 92b of the second gas supply portion 90. The supply path 92b and the exhaust path 142 can be arranged close to each other. For example, the supply path 92b and the exhaust path 142 are arranged to raise the temperature of the second gas supplied to the gap g2 via the supply path 92b and the exhaust hole 92a by the exhaust through the exhaust path 142.

[0114] The exhaust path 142 inside the peripheral wall portion 72 is connected to the exhaust path 144 extending outside the peripheral wall portion 72. An exhaust pump is provided on the exhaust path 144, which can use the suction of the exhaust pump to discharge the gas in the processing space S through the gap g1 and the exhaust paths 142 and 144 to the outside of the housing 22. A switching valve 146 is provided on the exhaust path 144. When the switching valve 146 is in the open state, the gas in the processing space S is discharged from the gap g1; when the switching valve 146 is in the closed state, the discharge of the gas in the processing space S through the gap g1 is stopped.

[0115] The first exhaust section 110 illustrated above is configured such that the total exhaust volume of the outer peripheral exhaust section 120 and the peripheral exhaust section 140 is greater than the supply volume of the first gas from the first gas supply section 80, and less than the total supply volume of the first gas and the supply volume of the second gas from the second gas supply section 90. Furthermore, the first exhaust section 110 is configured such that the total exhaust volume of the outer peripheral exhaust section 120, the central exhaust section 130, and the peripheral exhaust section 140 is greater than the total supply volume of the first gas and the second gas.

[0116] like Figure 4 As shown, the second venting section 150 (pin venting section) is configured to vent air from the processing space S through multiple through holes 52a, wherein multiple through holes 52a allow multiple support pins 62 for raising and lowering the workpiece W to be inserted. During the heating of the workpiece W, the workpiece W is placed on the support surface 54a of the hot plate 54, thus the multiple through holes 52a are closed by the workpiece W. Therefore, when the workpiece W is positioned above the support surface 54a at a distance, the second venting section 150 can be used to vent air from the processing space S. The second venting section 150, for example, has multiple independent venting paths 152, a common venting path 154, and a switching valve 156.

[0117] Multiple independent exhaust paths 152 are disposed below the heating section 52 (supporting bottom wall 58) and are connected to multiple through holes 52a respectively. One of the multiple independent exhaust paths 152 is connected to one of the multiple through holes 52a (the corresponding through hole 52a). A common exhaust path 154 is connected to the multiple independent exhaust paths 152. The gas discharged from the second exhaust section 150 flows out of the housing 22 after merging through the multiple independent exhaust paths 152 and the common exhaust path 154.

[0118] An exhaust pump is installed on the common exhaust path 154, which can use the suction of the exhaust pump to discharge the gas in the processing space S through multiple through holes 52a to the outside of the housing 22. A switching valve 156 is installed on the common exhaust path 154 to switch the on / off state of the common exhaust path 154. When the workpiece W is not placed on the support surface 54a of the hot plate 54, when the switching valve 156 is in the open state, the gas in the processing space S is discharged from the multiple through holes 52a; when the switching valve 156 is in the closed state, the discharge of gas in the processing space S through the multiple through holes 52a stops.

[0119] Here, refer to Figure 8 An example of an exhaust path forming section used to form an independent exhaust path 152 will be described. For example... Figure 8 As shown, the independent exhaust path 152 includes: a first region 152a, which is connected to a corresponding through hole 52a and extends downward (e.g., vertically downward) from the through hole 52a; and a second region 152b, which is connected to the first region 152a and extends in a direction intersecting the extending direction of the first region 152a (e.g., horizontally). Additionally, the second exhaust portion 150 includes: a first exhaust path forming portion 162 for forming the first region 152a; and a second exhaust path forming portion 166 for forming the second region 152b.

[0120] The first exhaust path forming portion 162 is formed in a cylindrical shape (e.g., a cylindrical shape) and extends in the vertical direction. The upper end of the first exhaust path forming portion 162 is connected (fixed) to the lower surface of the support base wall 58. Viewed from the vertical direction, the first exhaust path forming portion 162 is arranged to surround the outer edge of the corresponding through hole 52a. A portion of the first exhaust path forming portion 162 (e.g., the middle portion in the vertical direction) includes a bellows 164 that is telescopic along the extension direction of the first region 152a. By including the bellows 164 in the first exhaust path forming portion 162, the first exhaust path forming portion 162 can telescopic in the vertical direction, and the tightness between the support base wall 58 and the upper end of the first exhaust path forming portion 162 can be maintained. One end of the second exhaust path forming portion 166 is connected to the lower end of the first exhaust path forming portion 162.

[0121] The second exhaust path forming portion 166 is formed in a cylindrical shape (e.g., a square tube shape) and extends horizontally. The second exhaust path forming portion 166 is disposed on a base plate 24 that separates the upper region V1 and the lower region V2. The second exhaust path forming portion 166 includes a bottom portion 168 opposite to (or in contact with) the base plate 24. At one end of the second exhaust path forming portion 166 (the portion connected to the first exhaust path forming portion 162), a connecting hole 168a is formed in the bottom portion 168. The connecting hole 168a is disposed at a position overlapping with the through hole 52a and the through hole 24a of the base plate 24. A support pin 62 is inserted into the connecting hole 168a and the through hole 24a, in addition to being inserted into the through hole 52a. Furthermore, the support pin 62 is disposed within the first region 152a along the extending direction of the first region 152a.

[0122] The connecting hole 168a is, for example, circular, and the size (diameter) of the opening of the connecting hole 168a is larger than the diameter of the support pin 62. When the size of the opening of the connecting hole 168a is larger than the diameter of the support pin 62, the support pin 62 can be displaced in the horizontal direction. For example, the size of the opening of the connecting hole 168a is set to be about 1.5 to 3 times the diameter of the support pin 62. The size of the through hole 24a connecting the upper region V1 and the lower region V2 is larger than the size of the connecting hole 168a. In the structure of the exhaust path forming part described above, a gap is generated between the support pin 62 and the inner circumferential surface of the connecting hole 168a, so gas flows from the lower region V2 into the independent exhaust path 152.

[0123] To prevent gas from flowing in from the lower region V2, the second exhaust portion 150 also includes a sealing member 170 for closing the connection hole 168a. The sealing member 170 is disposed on the bottom 168 in such a way that it covers the connection hole 168a from above around the support pin 62. The sealing member 170 is formed, for example, in a circular or polygonal shape when viewed from above, and has an insertion hole 170a for the support pin 62 to be inserted into approximately its center. The insertion hole 170a is set to be smaller than the diameter of the connection hole 168a and slightly larger than the diameter of the support pin 62.

[0124] The sealing member 170 is movable relative to the connecting hole 168a, moving together with the horizontal displacement of the support pin 62. The outer diameter (width) of the sealing member 170 is larger than that of the connecting hole 168a, and is configured to cover the connecting hole 168a even if the support pin 62 is displaced horizontally within the connecting hole 168a. Furthermore, a limiting portion for restricting the vertical movement of the sealing member 170 can be provided at the end of the sealing member 170 disposed in the second exhaust path forming portion 166, and a portion of the bottom 168 (the portion where the connecting hole 168a is located) can be positioned higher than the other portions.

[0125] Return to Figure 3 A conveying section 190 for conveying workpiece W between the cooling treatment section 30 and the heating treatment section 50, for example, has a holding arm 192 and a horizontal drive section 194. The holding arm 192 is disposed in the upper region V1 at a position above the cooling plate 32 and the heating section 52 for horizontally holding the workpiece W. The holding arm 192 is configured to allow the workpiece W to be transferred between multiple support pins 36 or multiple support pins 62.

[0126] The horizontal drive unit 194 is disposed in the lower region V2 and can move the holding arm 192 along the direction in which the cooling treatment unit 30 and the heating treatment unit 50 are arranged using a power source such as an electric motor. The horizontal drive unit 194 can move the holding arm 192 between a position where the holding arm 192 is disposed vertically above the cooling plate 32 and a position where the holding arm 192 is disposed vertically above the heating unit 52 (hot plate 54).

[0127] (Control device)

[0128] The control device 200 controls the coating-developing apparatus 2, which includes the heat treatment unit U2. For example... Figure 2 As shown, the control device 200 functionally comprises a storage unit 202 and a control unit 204. The storage unit 202 stores programs for operating each component of the coating-developing apparatus 2, including the heat treatment unit U2. The storage unit 202 also stores various data (e.g., information related to indication signals for operating the heat treatment unit U2) and information from sensors installed in each component. The storage unit 202 can be, for example, a semiconductor memory, an optical recording disk, a magnetic recording disk, or a photomagnetic recording disk. The program may also be contained in an external storage device separate from the storage unit 202 or intangible media such as signal transmission media. Alternatively, the program may be installed from these other media into the storage unit 202, and the storage unit 202 may store the program. The control unit 204 controls the operation of each component of the coating-developing apparatus 2 based on the program read from the storage unit 202.

[0129] The control device 200 comprises one or more control computers. For example, the control device 200 has... Figure 9The circuit 210 shown is a computer-readable storage medium, such as a hard disk. The storage medium stores a program for causing the control device 200 to execute the heat treatment method described later. The storage medium can be a non-volatile semiconductor memory, a hard disk, or an optical disk. The memory 214 temporarily stores the program loaded from the storage medium of the storage unit 216 and the calculation results of the processor 212. The processor 212 and the memory 214 cooperate to execute the program, thereby constituting the functional modules described above. The timer 222 measures elapsed time, for example, by counting reference pulses of a certain period. The input / output port 218 performs electrical signal input / output with the heat treatment unit U2 according to instructions from the processor 212.

[0130] The hardware structure of the control device 200 is not necessarily limited to functional modules composed of programs. For example, the functional modules of the control device 200 can also be composed of dedicated logic circuits or ASICs (Application Specific Integrated Circuits) integrated from them.

[0131] [Substrate Processing Methods]

[0132] Next, refer to Figures 10-15 The heat treatment method performed in the heat treatment unit U2, which is an example of a substrate processing method, will be described. Figure 10 This is a flowchart illustrating an example of a heat treatment method for a workpiece W. First, with the supply of low-oxygen gas and the exhaust from the exhaust unit stopped, the control unit 204 of the control device 200 controls the conveying device A3 and the heat treatment unit U2, causing the workpiece W to be processed to be fed into the heat treatment unit U2 (step S11). For example, the control unit 204 controls the conveying device A3 and the workpiece lifting unit 34, causing the workpiece W to be transferred from the conveying device A3 to the multiple support pins 36 of the cooling treatment unit 30. Then, the control unit 204 uses the gate drive unit 28 to move the gate 26 to close the inlet 22a, thereby sealing the heat treatment unit U2.

[0133] Next, the control unit 204 controls multiple gas supply units to begin supplying low-oxygen gas into the heat treatment unit U2 (step S12). Specifically, the control unit 204 switches the on / off valve 48 of the gas supply unit 40, the on / off valve 88 of the first gas supply unit 80, the on / off valve 98 of the second gas supply unit 90, and the on / off valve 108 of the third gas supply unit 100 from the closed state to the open state. Thus, as... Figure 12As shown in (a), low-oxygen gas Gd is supplied to the upper region V1 of the heat treatment unit U2, and the oxygen concentration in the heat treatment unit U2 (upper region V1) begins to decrease.

[0134] Next, the control unit 204 controls the first exhaust section 110 and the second exhaust section 150, causing exhaust to begin from various exhaust sections other than the central exhaust section 130 of the first exhaust section 110 (step S13). Specifically, the control unit 204 switches the switch valve 126 of the peripheral exhaust section 120, the switch valve 146 of the peripheral exhaust section 140, and the switch valve 156 of the second exhaust section 150 from the closed state to the open state. As a result, the processing space S can be vented from the exhaust port 122, the gap g1, and the multiple through holes 52a of the peripheral exhaust section 120.

[0135] Next, the control unit 204 controls the workpiece lifting unit 34 of the cooling treatment unit 30, the workpiece lifting unit 60 of the heating treatment unit 50, and the conveying unit 190, so that the workpiece W to be processed is conveyed from the cooling treatment unit 30 to the heating treatment unit 50 (step S14). Specifically, as Figure 12 As shown in (b), when the cover 74 is open (the processing space S is not formed), the control unit 204 controls the workpiece lifting unit 60 and the conveying unit 190 to place the workpiece W on the heating unit 52 (the support surface 54a of the hot plate 54).

[0136] Next, the control unit 204 controls the heat treatment unit 50 to perform heat treatment on the workpiece W, which is to be processed (step S15). In addition, the heat treatment unit 50 is pre-controlled so that the temperature of the hot plate 54 is suitable for heat treatment. Figure 11 Here is an example of the heating process in step S15. In the heating process of step S15, for example, the control unit 204 uses the lifting drive unit 68 to move the cover 74 downwards, thereby forming a processing space S for heating above the hot plate 54 (step S21). Figure 13 As shown in (a), the cover 74 descends to form a processing space S, thereby enabling the workpiece W to be heated.

[0137] The processing space S is narrower than the area outside chamber 70 in the upper region V1. Before the heat treatment begins, the upper region V1 is supplied with a low-oxygen gas. Therefore, immediately after the processing space S is formed, it becomes a low-oxygen state to the extent that the coating on the workpiece W can achieve the desired etch resistance. Furthermore, immediately after the processing space S is formed, in order to make the processing space S sufficiently low-oxygen, the gas in the processing space S can be replaced with gas while the cover 74 is temporarily closed before the workpiece W is fed into the heat treatment section 50. After the cover 74 is lowered, the workpiece W is placed on the hot plate 54, and thus, the processing space S is substantially vented using the outer peripheral vent 120 and the peripheral vent 140.

[0138] Next, the control unit 204 remains on standby until a predetermined first heating time has elapsed since the descent of the cover 74 ends (step S22). The first heating time is pre-stored in the storage unit 202. The first heating time is set to the degree to which the coating on the workpiece W has cured to a predetermined level, for example, it is pre-set to be about several tens of seconds. By executing step S22, the venting by the outer peripheral venting unit 120 and the peripheral venting unit 140, the supply of the first gas from the first gas supply unit 80 to the processing space S, and the supply of the second gas from the second gas supply unit 90 to the gap g2 continue for the first heating time.

[0139] During the execution of step S22, the total exhaust volume of the peripheral exhaust section 120 and the peripheral exhaust section 140 (the exhaust volume of the first exhaust section 110) is greater than the supply volume of the first gas from the first gas supply section 80, and less than the total supply volume of the second gas from the second gas supply section 90 and the supply volume of the first gas (hereinafter referred to as the "first state"). In this first state, the exhaust volume of the first exhaust section 110 is greater than the supply volume of the first gas; therefore, assuming the processing space S is a closed space, the processing space S becomes a negative pressure state. In the chamber 70 of the present invention, the processing space S is connected to the outside of the processing space S via a gap g2; therefore, gas flows into the processing space S through the gap g2 to eliminate the negative pressure state within the processing space S. In this state, the exhaust volume of the first exhaust section 110 is less than the sum of the supply volumes of the first gas and the second gas. Therefore, a portion of the second gas supplied from the second gas supply section 90 flows into the processing space S through the inner end g21 of the gap g2, and the remaining portion flows out of the chamber 70 through the outer end g22 of the gap g2. Thus, as... Figure 13 As shown in (a), gas is released from gap g2 into the space outside chamber 70, preventing gas from flowing into processing space S from outside chamber 70. Furthermore, during the execution of steps S21 and S22, a third gas is supplied from the third gas supply unit 100 to the periphery of chamber 70.

[0140] Next, the control unit 204 controls the first exhaust unit 110 so that, while continuously venting using the outer peripheral exhaust unit 120 and the peripheral exhaust unit 140, venting begins from the central exhaust unit 130 into the processing space S (step S23). Specifically, the control unit 204 switches the switch valve 136 of the central exhaust unit 130 from the closed state to the open state. The workpiece W is placed on the hot plate 54, therefore, venting is substantially performed into the processing space S using the outer peripheral exhaust unit 120, the central exhaust unit 130, and the peripheral exhaust unit 140.

[0141] Next, the control unit 204 stands by until a predetermined second heating time has elapsed since the exhaust from the central exhaust unit 130 begins (step S24). The second heating time is pre-stored in the storage unit 202. The second heating time is set to the degree to which the coating on the workpiece W cures to the desired level during the heat treatment, for example, it is pre-set to be about several tens of seconds. The second heating time can be longer than the first heating time; in one example, it is set to be about 2 to 5 times the first heating time. By executing steps S23 and S24, the exhaust from the outer peripheral exhaust unit 120, the central exhaust unit 130, and the peripheral exhaust unit 140, the supply of the first gas from the first gas supply unit 80 to the processing space S, and the supply of the second gas from the second gas supply unit 90 to the gap g2 continue for the second heating time.

[0142] During the execution of step S24, the total exhaust volume of the outer peripheral exhaust section 120, the central exhaust section 130, and the peripheral exhaust section 140 (the exhaust volume of the first exhaust section 110) becomes greater than the total supply volume of the first gas and the supply volume of the second gas (hereinafter referred to as the "second state"). In this case, approximately all of the second gas from the second gas supply section 90 flows into the processing space S, such as... Figure 13 As shown in (b), the gas flows further from outside the chamber 70 into the processing space S through the gap g2.

[0143] Through the execution of steps S21 to S24 described above, the control unit 204 switches the exhaust state of the processing space S from a first state to a second state. In the first state, the processing space S is vented with an exhaust volume less than the sum of the supply volumes of the first gas and the second gas. In the second state, the processing space S is vented with an exhaust volume greater than the sum of the supply volumes of the first gas and the second gas. Furthermore, the control unit 204 controls the first exhaust section 110 so that in the first state, at least the peripheral exhaust section 120 vents the processing space S, and in the second state, at least the central exhaust section 130 vents the processing space S.

[0144] Next, as Figure 14As shown in (a), the control unit 204 controls the workpiece lifting unit 60 to raise the workpiece W to an intermediate position while maintaining the processing space S (while maintaining the state where the cover 74 is lowered) (step S25). Then, after raising the workpiece W to the intermediate position, the control unit 204 stands by until a predetermined recovery time has elapsed (step S26). The recovery time is pre-stored in the storage unit 202. The recovery time is set to a degree that sufficiently reduces the generation of sublimation from the coating on the workpiece W due to the temperature drop of the workpiece W after being heated by the hot plate 54. In one example, the recovery time is set to about a few seconds to tens of seconds. The intermediate position is set to a degree that allows for efficient recovery of sublimation from the workpiece W using the peripheral exhaust unit 120 and the central exhaust unit 130.

[0145] The aforementioned intermediate position is, for example, set to the position (height position) between the junction of the workpiece W and the multiple support pins 62 of the conveying section 190 and the workpiece lifting section 60 when the cover 74 is open, and the support surface 54a of the hot plate 54. With the processing space S formed, the workpiece W is raised away from the hot plate 54 and connected to the processing space S by inserting multiple through holes 52a through which the multiple support pins 62 are inserted. Exhaust is continuously performed through the multiple through holes 52a using the second exhaust section 150, thus further venting the processing space S through the multiple through holes 52a.

[0146] Next, the control unit 204 controls the first exhaust unit 110 to stop the exhaust of the central exhaust unit 130 (step S27). For example, the control unit 204 stops the discharge of gas from the exhaust port 132 of the central exhaust unit 130 by switching the switch valve 136 of the central exhaust unit 130 from the open state to the closed state.

[0147] Next, as Figure 14 As shown in (b), the control unit 204 uses the lifting drive unit 68 to raise the cover 74, so that the space on the hot plate 54 opens to the upper region V1 while the workpiece W is held in the middle position by multiple support pins 62 (step S28). Next, as... Figure 15 As shown in (a), the control unit 204 uses the workpiece lifting unit 60 to raise the workpiece W to the handover position between the workpiece W and the conveying unit 190 (step S29). Through the above steps, the heating treatment in step S15 is completed.

[0148] Return to Figure 10 After executing step S15, the control unit 204 controls the workpiece lifting unit 34 of the cooling treatment unit 30, the workpiece lifting unit 60 of the heating treatment unit 50, and the conveying unit 190, so that the workpiece W to be processed is conveyed from the heating treatment unit 50 to the cooling treatment unit 30 (step S16). Specifically, as Figure 15As shown in (b), the control unit 204 controls the workpiece lifting unit 34 and the conveying unit 190, etc., so that the workpiece W that has undergone heat treatment is placed on the cooling plate 32 (the support surface of the cooling plate 32).

[0149] Next, the control unit 204 remains on standby until a predetermined cooling time has elapsed since the workpiece W was placed on the cooling plate 32 (step S17). The cooling time is pre-stored in the storage unit 202 and is set to allow the workpiece W, which has undergone heat treatment, to be cooled to a desired temperature. Through the execution of steps S16 and S17, the workpiece W is cooled. The space surrounding the cooling plate 32 is created as a low-oxygen environment by the supply of a fourth gas from the gas supply unit 40; therefore, cooling treatment can be performed under low-oxygen conditions.

[0150] Next, the control unit 204 controls multiple gas supply units to stop the supply of low-oxygen gas in the heat treatment unit U2 (step S18). Specifically, the control unit 204 switches the on / off valve 48 of the gas supply unit 40, the on / off valve 88 of the first gas supply unit 80, the on / off valve 98 of the second gas supply unit 90, and the on / off valve 108 of the third gas supply unit 100 from the open state to the closed state.

[0151] The control unit 204 controls the conveying device A3 and the heat treatment unit U2, so that the workpiece W, which has undergone heat treatment (heat treatment and cooling treatment), is sent out from the heat treatment unit U2 (step S19). For example, after the control unit 204 moves the gate 26 using the gate drive unit 28 to open the feed inlet 22a, it controls the conveying device A3 and the workpiece lifting unit 34 to transfer the workpiece W from the multiple support pins 36 of the cooling treatment unit 30 to the conveying device A3.

[0152] Through the above steps, the series of heat treatments for one workpiece W is completed. The control unit 204 can sequentially perform the same processing as steps S11 to S19 on multiple subsequent workpieces W. For the second and subsequent workpieces W, the processing in step S13 can be omitted.

[0153] [Effects of the Implementation Method]

[0154] The heat treatment unit U2 of the above-described embodiment includes: a heating section 52 for supporting a workpiece W with a coating and heating the workpiece W; a chamber 70 having a peripheral wall 72 and a cover 74, the peripheral wall 72 surrounding the heating section 52, and the cover 74 covering the heating section 52 with a gap g2 formed between the cover 74 and the peripheral wall 72, thereby forming a processing space S on the heating section 52; a housing 22 for housing the heating section 52 and the chamber 70; a first gas supply section 80 for supplying a first gas with an oxygen concentration lower than that of the atmosphere to the processing space; an exhaust section (first exhaust section 110) for exhausting the processing space with an exhaust volume greater than that of the first gas; a second gas supply section 90 for supplying a second gas with an oxygen concentration lower than that of the atmosphere to the gap g2 between the peripheral wall 72 and the cover 74; and a third gas supply section 100 for supplying a third gas with an oxygen concentration lower than that of the atmosphere to the outside of the chamber 70 within the housing 22.

[0155] In this heat treatment unit U2, the exhaust volume of the first exhaust section 110 is greater than the supply volume of the first gas, thus enabling exhaust to create a negative pressure in the processing space S. This allows for efficient recovery of sublimation products generated during the heating of the workpiece W from the coating process. Furthermore, a gap g2 is formed between the peripheral wall portion 72 and the cover portion 74, allowing gas to be introduced from outside the processing space S to eliminate the negative pressure state. Specifically, the second gas supplied from the second gas supply section 90 to the gap g2 between the peripheral wall portion 72 and the cover portion 74 can be introduced into the processing space S. Even when a larger volume of gas than the second gas supply is introduced into the processing space S, the second gas from the second gas supply section 90 and gas from outside the chamber 70, which is in a low-oxygen state due to the third gas supply section 100, are also introduced into the processing space S. Therefore, even if gas flows into the processing space S from the outside, the processing space S can be maintained in a low-oxygen state. Therefore, it is possible to simultaneously achieve both high-efficiency recovery of sublimation products and heat treatment under low-oxygen conditions.

[0156] As a method for heat-treating the coating of workpiece W under low-oxygen conditions, it is advisable to ensure that the amount of low-oxygen gas supplied to the processing space is greater than the amount of gas discharged from the processing space, so as not to introduce gas from outside the chamber into the processing space. However, in this method, when the processing space is formed, sublimation may leak out of the chamber through the gap between the peripheral portion and the cover portion. In addition, if the processing space is opened due to insufficient recovery of sublimation within the processing space, sublimation may leak out of the chamber. In the structure of the present invention, the exhaust volume of the first exhaust portion 110 is greater than the supply volume of the first gas, thus enabling efficient recovery of sublimation. Furthermore, by supplying a second gas to the gap g2 between the peripheral wall portion 72 and the cover portion 74 and supplying a third gas to the outside of the processing space S, the processing space S can be maintained in a low-oxygen state, and leakage of sublimation out of the chamber 70 through the gap g2 can be prevented.

[0157] In the above embodiment, the first venting section 110 includes: an outer peripheral venting section 120 for venting the processing space S from an outer peripheral region outside the periphery Wc of the workpiece W supported by the heated section 52; and a central venting section 130 for venting the processing space S from a central region inside the periphery Wc of the workpiece W supported by the heated section 52. In the initial stage of the curing process of the coating formed on the front surface Wa of the workpiece W, the venting of the processing space S has a significant impact on the film thickness; in the later stage of the curing process, the venting of the processing space S has a smaller impact on the film thickness. In the above structure of the present invention, by switching the operation of the first venting section 110, venting can be performed from the outer peripheral region in the initial stage of the curing process, suppressing the impact on the film thickness caused by the venting of the processing space S. Furthermore, in the later stage of the curing process, where the impact of the venting of the processing space S on the film thickness is less significant, venting can be performed from the central region, enabling efficient recovery of sublimation. Therefore, efficient recovery of sublimation is possible, and the in-plane uniformity of the film thickness is improved.

[0158] In the above embodiment, the first gas supply unit 80 has a head 82, on which a plurality of discharge holes 82a are formed, distributed on the surface of the head 82 opposite to the workpiece W supported by the heated unit 52. A first gas can be supplied to the workpiece W on the heated unit 52 through the plurality of discharge holes 82a. In this case, the first gas can be uniformly supplied to the front surface Wa of the workpiece W from the first gas supply unit 80, thus homogenizing the effect of the first gas on the film thickness. Therefore, the in-plane uniformity of the film thickness can be improved.

[0159] In the above embodiment, the peripheral wall portion 72 is arranged such that a gap g1 is formed between the peripheral wall portion 72 and the heating portion 52. The first exhaust portion 110 has a peripheral exhaust portion 140, which is used to exhaust gas from the gap g1 between the peripheral wall portion 72 and the heating portion 52 into the processing space S. In this case, the increase in oxygen concentration in the processing space S due to the gas present in the gap g1 between the heating portion 52 and the peripheral wall portion 72 can be suppressed, and heat treatment can be performed more reliably under low oxygen conditions.

[0160] In the above embodiment, at least a portion of the exhaust path 142 included in the peripheral exhaust section 140 and at least a portion of the gas supply path (supply path 92b) included in the second gas supply section 90 are arranged close to each other. In this case, the temperature rise of the second gas supplied via the gas supply path (supply path 92b) of the second gas supply section 90 can be prevented from causing the temperature of the processing space S to drop due to the second gas from the second gas supply section 90 being drawn into the processing space S.

[0161] The heat treatment unit U2 of the above embodiment further includes: a workpiece lifting section 60, which has a plurality of support pins 62 respectively inserted into a plurality of through holes 52a extending through the heating section 52 in the vertical direction, and a lifting drive section 64 for lifting the plurality of support pins 62; and a pin venting section (second venting section 150) for venting the processing space S from the plurality of through holes 52a. In this case, when the workpiece W is separated from the heating section 52, the increase in oxygen concentration in the processing space S caused by gas from the through holes 52a in which the support pins 62 are inserted can be suppressed, and heat treatment can be performed more reliably in a low-oxygen state.

[0162] In the above embodiment, the pin exhaust section (second exhaust section 150) includes: multiple independent exhaust paths 152 connected to multiple through holes 52a below the heating section 52; and a common exhaust path 154 connected to the multiple independent exhaust paths 152. In this case, compared to the case where an exhaust space connected to multiple through holes 52a is provided below the heating section 52 to exhaust air from the multiple through holes 52a, space saving of the pin exhaust section can be achieved.

[0163] In the above embodiment, one of the plurality of independent exhaust paths 152 includes: a first region 152a extending downward from a corresponding through hole 52a among the plurality of through holes 52a; and a second region 152b extending in a direction intersecting the extending direction of the first region 152a. The second exhaust portion 150 includes: a first exhaust path forming portion 162 for forming the first region 152a; and a second exhaust path forming portion 166 for forming the second region 152b. One of the plurality of support pins 62 is disposed within the first region 152a in the aforementioned independent exhaust path 152 along the extending direction of the first region 152a, and is inserted into a connecting hole 168a provided in the bottom 168 of the second exhaust path forming portion 166. The first exhaust path forming portion 162 includes a bellows 164 capable of extending and retracting along the extending direction of the first region 152a. The second exhaust section 150 includes a sealing member 170 that is movable relative to the connection hole 168a and is configured to close the connection hole 168a. In this case, by utilizing the bellows to absorb the contraction or expansion of the exhaust path forming section caused by the temperature rise of the heating section 52, the first region can be sealed more reliably. In addition, by closing the connection hole 168a provided at the bottom with the sealing member 170 that is movable relative to the connection hole 168a, the support pin 62 can move within the connection hole 168a, and the inflow of non-low-oxygen gases into the processing space S through the connection hole 168a can be prevented.

[0164] In the above embodiment, the coating is formed by applying a treatment liquid to the front side Wa of the workpiece W. In this case, sublimation products generated due to the temperature rise of the coating can be recovered efficiently, and the properties of the coating (e.g., etch resistance) can be improved by heat treatment under low oxygen conditions.

[0165] The coating-developing apparatus 2 of the above-described embodiment includes: a heat treatment unit U2; and a control device 200 for controlling the heat treatment unit U2. The control device 200 is capable of controlling the heat treatment unit U2 to switch from a first state to a second state, wherein, in the first state, the processing space S is vented with an exhaust volume less than the sum of the supply volume of the first gas and the supply volume of the second gas, and in the second state, the processing space S is vented with an exhaust volume greater than the sum of the supply volume of the first gas and the supply volume of the second gas.

[0166] It takes time for the oxygen concentration in the area outside the processing space S and gap g2 within the housing 22 to reach a level similar to that inside the processing space S. However, if heating is started after the standby period until a sufficiently low oxygen concentration is reached in the area outside the processing space S and gap g2, the efficiency (productivity) of the substrate processing decreases. In the above-described structure of the present invention, in the first state, the processing space S can be vented at a rate that prevents gas other than the second gas from the second gas supply unit 90 from entering the processing space S. Furthermore, in the second state after switching from the first state, gas that has reached a sufficiently low oxygen state can be introduced into the processing space S from the area outside the gap g2 and processing space S. Therefore, the efficiency of substrate processing, including heating under low oxygen conditions, can be improved.

[0167] In the above embodiment, the control device 200 controls the first venting section 110 such that, in the first state, at least the peripheral venting section 120 vents the processing space S, and in the second state, at least the central venting section 130 vents the processing space S. In the initial stage of the process where the coating on the front surface Wa of the workpiece W cures with heating, the venting of the processing space S has a significant impact on the film thickness; in the later stage of the curing process, the impact of venting on the film thickness is small. In the above structure of the present invention, in the initial stage of the curing process, by venting the processing space S from the peripheral region in the first state, the impact of venting on the film thickness can be suppressed. On the other hand, in the later stage of the curing process where the impact of venting on the film thickness is smaller, venting the processing space S from the central region in the second state allows for efficient recovery of sublimation. Therefore, sublimation can be recovered efficiently, and the in-plane uniformity of the film thickness can be improved.

[0168] [Variation Example]

[0169] The disclosure in this specification should be considered illustrative rather than restrictive in all respects. Various omissions, substitutions, and modifications may be made to the foregoing examples without departing from the scope and spirit of the claims.

[0170] The structure of the first exhaust section 110 is not limited to the examples described above. The first exhaust section 110 can have any structure as long as it can exhaust air from the processing space S while the workpiece W is mounted on the hot plate 54. For example, the first exhaust section 110 may not have at least one of the outer peripheral exhaust section 120, the center exhaust section 130, and the peripheral exhaust section 140. The heat treatment section 50 may also not include the second exhaust section 150.

[0171] In the example above, in the second state after switching from the first state, exhaust is performed on the processing space S from the peripheral exhaust section 120, the central exhaust section 130, and the peripheral exhaust section 140. However, the exhaust method in the second state is not limited to this. Alternatively, in the second state, exhaust from the central exhaust section 130 may be performed instead of exhaust from at least one of the peripheral exhaust section 120 and the peripheral exhaust section 140.

[0172] The structure of the second gas supply unit 90 is not limited to the example described above. Alternatively, the second gas supply unit 90 may replace the gas discharge unit located inside the peripheral wall portion 72, or supply the second gas from a gas discharge unit located inside the side wall 78 of the cover portion 74 to the gap g2, in addition to the gas discharge unit located inside the peripheral wall portion 72. In the example described above, the gap g2 is formed between the upper end of the peripheral wall portion 72 and the lower end of the side wall 78, but it is also possible that the side wall 78 covers the side of the peripheral wall portion 72, and the gap g2 is formed between the inner peripheral surface of the side wall 78 and the outer peripheral surface of the peripheral wall portion 72.

Claims

1. A heat treatment unit, characterized in that, include: A heating section is used to support a substrate with a coating and to heat the substrate; A chamber having a peripheral wall and a cover, the peripheral wall surrounding the heating part and the cover covering the heating part to form a processing space on the heating part by forming a gap between the cover and the peripheral wall; A housing for accommodating the heating element and the chamber; The first gas supply unit is used to supply the processing space with a first gas whose oxygen concentration is lower than that of the atmosphere. An exhaust section is used to exhaust the processing space with an exhaust volume greater than the supply volume of the first gas. A second gas supply unit is used to supply a second gas with an oxygen concentration lower than atmospheric oxygen to the gap between the peripheral wall portion and the cover portion; and The third gas supply unit is used to supply a third gas with an oxygen concentration lower than that of the atmosphere to the outside of the chamber inside the housing.

2. The heat treatment unit as described in claim 1, characterized in that: The exhaust section has: An outer peripheral exhaust section for venting exhaust from an outer peripheral region outside the periphery of the substrate supported by the heating section into the processing space; and A central exhaust section is used to exhaust air from a central region inside the periphery of the substrate supported by the heating section into the processing space.

3. The heat treatment unit as described in claim 1 or 2, characterized in that: The first gas supply unit has a head, on which a plurality of discharge holes are formed, distributed on the surface of the head opposite to the substrate supported by the heating unit, and the first gas can be supplied from the plurality of discharge holes to the substrate on the heating unit.

4. The heat treatment unit as described in claim 1 or 2, characterized in that: The peripheral wall portion is configured such that a gap is formed between the peripheral wall portion and the heating portion. The exhaust section has a peripheral exhaust section for venting the processing space from the gap between the peripheral wall section and the heating section.

5. The heat treatment unit as described in claim 4, characterized in that: At least a portion of the exhaust path included in the peripheral exhaust section and at least a portion of the gas supply path included in the second gas supply section are configured to be close to each other.

6. The heat treatment unit as described in claim 1 or 2, characterized in that, Also includes: The substrate lifting unit has multiple support pins that are respectively inserted into multiple through holes that pass through the heating unit in the vertical direction, and a lifting drive unit for lifting the multiple support pins. and A venting section is provided for venting the processing space through the plurality of through holes.

7. The heat treatment unit as described in claim 6, characterized in that: The exhaust section includes: multiple independent exhaust paths connected to the multiple through holes below the heating section; and a common exhaust path connected to the multiple independent exhaust paths.

8. The heat treatment unit as described in claim 7, characterized in that: One of the plurality of independent exhaust paths includes: a first region extending downward from a corresponding through-hole among the plurality of through-holes; and a second region extending in a direction intersecting the extending direction of the first region. The exhaust portion includes: a first exhaust path forming portion for forming the first region; and a second exhaust path forming portion for forming the second region. One of the plurality of support pins is disposed within the first region along the extension direction of the first region in the independent exhaust path, and is inserted into a connecting hole provided at the bottom of the second exhaust path forming portion. The first exhaust path forming section includes a bellows that can extend and retract along the extension direction of the first region. The venting portion includes a sealing member that is movable relative to the connection hole and is configured to close the connection hole.

9. The heat treatment unit as described in claim 1 or 2, characterized in that: The coating is formed by applying a treatment liquid to the surface of the substrate.

10. A substrate processing apparatus, characterized in that, include: The heat treatment unit as described in claim 1; and Control unit for controlling the heat treatment unit The control unit can control the heat treatment unit to switch the heat treatment unit from a first state to a second state, wherein in the first state, the processing space is vented with an exhaust volume less than the sum of the supply volume of the first gas and the supply volume of the second gas, and in the second state, the processing space is vented with an exhaust volume greater than the sum of the supply volume of the first gas and the supply volume of the second gas.

11. The substrate processing apparatus as claimed in claim 10, characterized in that: The exhaust section includes: an outer peripheral exhaust section for exhausting air from an outer peripheral region outside the periphery of the substrate supported by the heating section into the processing space; and a central exhaust section for exhausting air from a central region inside the periphery of the substrate supported by the heating section into the processing space. The control unit is capable of controlling the exhaust section so that, in the first state, at least the peripheral exhaust section exhausts the processing space, and in the second state, at least the central exhaust section exhausts the processing space.

12. A heat treatment method, characterized in that, include: In the heating step, a substrate with a coating is heated in a processing space using a heating unit, wherein the processing space is formed by a chamber on the heating unit, the chamber having a peripheral wall portion and a cover portion, the peripheral wall portion surrounding the periphery of the heating unit, and the cover portion being configured such that a gap is formed between the cover portion and the peripheral wall portion; The first gas supply step involves supplying a first gas with an oxygen concentration lower than that of the atmosphere to the processing space. The exhaust step involves venting the processing space with an exhaust volume greater than the supply volume of the first gas. The second gas supply step involves supplying a second gas with an oxygen concentration lower than atmospheric oxygen into the gap between the peripheral wall and the cover; and In the third gas supply step, a third gas with an oxygen concentration lower than that of the atmosphere is supplied to the outside of the chamber within the housing that houses the heating element and the chamber.

13. A computer-readable storage medium, characterized in that: The device contains a program for performing the heat treatment method of claim 12.

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