A material receiving box, multi-wire saw device and cutting process thereof

By adding an overflow baffle in the material receiving box, the interior of the shell is divided into an overflow chamber and an immersion chamber, which solves the problems of line marks and poor thermal conductivity during silicon wafer cutting, and achieves better cutting effect and cleaning convenience.

CN113858462BActive Publication Date: 2025-10-17JINGAO SOLAR CO LTD
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Patent Information

Application Number
CN202111226165.7
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-10-21
Publication Date
2025-10-17
Estimated Expiration
2041-10-21

AI Technical Summary

Technical Problem

The existing splicing box has the problems of easy generation of line marks on the surface of the silicon wafer, poor thermal conductivity and difficulty in cleaning during the silicon wafer cutting process.

Method used

An overflow baffle is added to the material receiving box to divide the interior of the shell into an overflow chamber and an immersion chamber. The cutting fluid enters the overflow chamber through the overflow baffle and is discharged from the overflow outlet. The cut crystalline silicon is partially immersed in the immersion chamber, which improves heat conduction and reduces the cutting temperature.

Benefits of technology

It effectively improves the heat conduction of silicon wafers during the cutting process, reduces the cutting temperature and the generation of line marks, and simplifies the silicon wafer cleaning process.

✦ Generated by Eureka AI based on patent content.

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Abstract

The application discloses a kind of material receiving box, multi-wire cutting equipment and its cutting process.The specific embodiment includes, material receiving box, comprising: shell, overflow baffle and overflow outlet being arranged in at least one side of shell, wherein, the opposite side of shell bottom in shell is provided with open; Overflow baffle is fixed to at least one end in the inside of shell, and the height of overflow baffle is lower than the height of shell;Overflow baffle is divided into soaking cavity and overflow cavity for shell;Soaking cavity is used to accept cutting liquid and cut silicon wafer;Overflow cavity is communicated with overflow outlet, for cutting liquid overflowed from soaking cavity is discharged through overflow outlet.By increasing overflow baffle in material receiving box, the outflow speed of cutting liquid can be controlled during cutting process, the cut crystalline silicon can be partially soaked in cutting liquid, effectively improve the heat conduction of silicon wafer during cutting process, and reduce the cutting temperature of cutting place.
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Description

TECHNICAL FIELD

[0001] The present application belongs to the field of crystalline silicon processing, and particularly relates to a material receiving box, a multi-wire cutting device and a cutting process thereof. BACKGROUND

[0002] In the production process of photovoltaic modules, it is inevitable to cut silicon rods to obtain silicon wafers required by photovoltaic modules. At present, when a multi-wire cutting device is used to cut silicon rods, a material receiving box is generally required to receive the material.

[0003] In the existing material receiving box, the shell is usually a simple hollow rectangular structure, and a sewage discharge structure is arranged on both sides of the bottom of the shell. During the material receiving process, the cutting liquid used to cool the silicon wafers is directly discharged through the sewage discharge structure on both sides of the bottom, so that the existing material receiving box has the problems of easy generation of line marks on the surface of the silicon wafers, poor heat conduction performance and difficult cleaning of the silicon wafers during use. SUMMARY

[0004] Therefore, the present application aims to provide a material receiving box, a multi-wire cutting device and a cutting process thereof, which can make part of the cutting liquid enter the overflow cavity through the overflow baffle and be discharged from the overflow cavity, so that the cut crystalline silicon can be partially soaked in the cutting liquid, effectively improve the heat conduction of the silicon wafers during the cutting process, reduce the cutting temperature at the cutting position, and reduce the probability of line marks.

[0005] In order to solve the above technical problems, the present application provides the following technical solutions:

[0006] In a first aspect, the present application provides a material receiving box, which comprises a shell, an overflow baffle and an overflow outlet arranged on at least one side of the shell, wherein one side of the shell opposite to the bottom of the shell is provided with an opening; the overflow baffle is fixed to at least one end inside the shell, and the height of the overflow baffle is lower than the height of the shell; the overflow baffle divides the shell into a soaking cavity and an overflow cavity; the soaking cavity is used to receive cutting liquid and cutting silicon wafers; and the overflow cavity is connected to the overflow outlet and used to discharge the cutting liquid and the cutting silicon wafers overflowing from the soaking cavity through the overflow outlet.

[0007] In a second aspect, the present application provides a multi-wire cutting device, which comprises a workbench, a left main roller, a lower main roller, a right main roller, a cutting liquid spray pipe and a wire net, and the above-mentioned material receiving box; the left main roller and the right main roller are symmetrically arranged on both sides of the workbench, and the lower main roller is arranged below the workbench; the wire net is sleeved on the outer side of the left main roller, the lower main roller and the right main roller; the cutting liquid spray pipe is arranged on at least one side of the workbench and used to spray cutting liquid onto the wire net; and the material receiving box is arranged below the workbench and above the lower main roller, and the open end of the material receiving box faces the workbench.

[0008] In a third aspect, the present application provides a cutting process of a multi-wire saw device, comprising:

[0009] Step (a), cutting the to-be-cut silicon, the wire net brings the cutting liquid into the cutting area, and the cutting liquid flowing out of the cutting area flows into the soaking cavity;

[0010] Step (b), adjusting the flow of the cutting liquid sprayed by the cutting liquid spray pipe, so that part of the cutting liquid flowing out of the cutting area flows out of the sewage discharge structure at the bottom of the soaking cavity, part of the cutting liquid overflows to the overflow cavity, and flows out of the overflow outlet.

[0011] The embodiment of the above application has the following advantages or beneficial effects: the material receiving box provided by the embodiment of the present application separates the inner part of the shell into an overflow cavity and a soaking cavity by adding an overflow baffle, the cutting liquid can overflow to the overflow cavity through the overflow baffle, so that the cut silicon can be soaked in the cutting liquid in the soaking cavity at all times during the cutting process, effectively improving the heat conduction of the silicon wafer during the cutting process and reducing the cutting temperature at the cutting position. The multi-wire saw device provided by the embodiment of the present application can realize that the cut silicon can be soaked in the cutting liquid in the soaking cavity at all times, and the cutting effect is better. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a schematic diagram of a multi-wire saw device of the prior art;

[0013] Figure 2 is a schematic diagram of a conventional material receiving box of the prior art;

[0014] Figure 3 is a schematic diagram of a multi-wire saw device according to an embodiment of the present application;

[0015] Figure 4 is a cross-sectional view of the end part of a material receiving box according to another embodiment of the present application;

[0016] Figure 5 is a schematic diagram of a sewage discharge adjusting plate at the bottom of a material receiving box according to an embodiment of the present application;

[0017] Figure 6 is a schematic diagram of a multi-wire saw device according to an embodiment of the present application;

[0018] Figure 7 is a flowchart of a cutting process of a multi-wire saw device according to an embodiment of the present application.

[0019] The reference signs are as follows:

[0020] 10 - shell

[0021] 20 - overflow baffle 21 - soaking cavity 22 - overflow cavity 221 - low liquid level sensor

[0022] 30 - blowdown structure 31 - blowdown inlet 32 - blowdown channel 33 - blowdown outlet 34 - blowdown adjusting plate 35 - partition plate

[0023] 40 - overflow outlet 50 - ultrasonic transducer 60 - sound intensity tester 70 - workbench 80 - left main roller 90 - lower main roller 100 - right main roller 110 - cutting fluid spray pipe 120 - wire net 130 - detachable filter net 140 - mounting bracket DETAILED DESCRIPTION

[0024] The exemplary embodiments of the present application will be described hereinafter with reference to the accompanying drawings, in which various specific details are set forth in order to provide a thorough understanding of the embodiments of the present application. It will be apparent to one of ordinary skill in the art, however, that the embodiments of the present application can be practiced without such specific details. In other instances, well-known structures and functions have not been described in detail in order to not obscure the understanding of this description. It is also noted that, as used herein, "and / or" includes any and all combinations of one or more of the associated listed items.

[0025] The current multi-wire cutting device uses a traditional receiving box to receive the material, as shown in Figure 1 The traditional receiving box is arranged at the middle position of the left main roller, the right main roller and the lower main roller, and the structure of the receiving box and the flow direction of the cutting fluid are shown in Figure 2 As shown in Figure 1 and Figure 2 , the traditional receiving box is a hollow cuboid structure, and a blowdown outlet is arranged at the bottom of both ends. After the cutting fluid enters the existing receiving box, the cutting silicon wafer does not directly contact the cutting fluid in the receiving box. With the increase of the cutting time and the length of the cutting area, the heat conduction gradually becomes poor due to the fact that the cutting silicon wafer does not directly contact the cutting fluid in the receiving box. In addition, the silicon wafers are attracted to each other due to the surface tension of the liquid, and the probability of generating line marks is high. At the same time, the silicon wafers are heated under the action of cutting heat, and the residual silicon powder tends to dry, which easily causes the silicon wafers to be dirty and brings difficulties to the cleaning of the silicon wafers. Therefore, although the traditional receiving box can also achieve the purpose of timely blowdown, it cannot increase heat exchange during the cutting of the silicon wafer, and the cutting effect is not good.

[0026] According to a first aspect of the embodiments of the present application, a receiving box is provided. Wherein, Figure 3 and Figure 4 respectively show the front view of the receiving box provided by the embodiments of the present application. As shown in Figure 3 and Figure 4 , the receiving box can include a shell 10, an overflow baffle 20 and an overflow outlet 40 arranged on at least one side of the shell 10.

[0027] The shell 10 is open on the side opposite to the bottom of the shell 10 to receive the cutting liquid flowing from the to-be-cut silicon wafer. The overflow baffle 20 is fixed to at least one end of the interior of the shell 10, and the height of the overflow baffle 20 is lower than the height of the shell 10. The overflow baffle 20 divides the shell 10 into an immersion cavity 21 and an overflow cavity 22. The overflow cavity 22 is connected to an overflow outlet 40 for discharging the cutting liquid overflowing from the immersion cavity 21 through the overflow outlet 40. The immersion cavity 21 is used to receive the cutting liquid and the cut silicon wafer.

[0028] The length of the immersion cavity 21 is greater than the length of the to-be-cut silicon wafer, and the width of the shell 10 is greater than the width of the to-be-cut silicon wafer, so that the cut silicon wafer can be immersed in the immersion cavity 21.

[0029] It is worth noting that in the present application, the shell is a cuboid structure, at least one side of the shell is at least one side of the cuboid, and at most four sides. The side opposite to the short side of the cuboid in the shell is referred to as one end of the shell, and at most only two ends. The overflow baffle 20 is fixed to at least one end of the interior of the shell, which can ensure the dispersion of the fluid while saving materials and simplifying the structure. If the overflow baffle 20 is arranged on the four sides of the shell, although the overflow is more sufficient, it will increase the distance between the lower main roller 8 and the left main roller 7 and the right main roller 9 as shown in the figure, which will affect the cutting effect. Figure 6

[0030] The height of the overflow baffle 20 is lower than the height of the shell 10, so that the cutting liquid in the immersion cavity 21 can overflow to the overflow cavity 22 when reaching the height of the overflow baffle 20, and will not directly overflow from the shell, which ensures that the cutting liquid will not be spilled on the outside wire net 120.

[0031] In an alternative embodiment, the receiving box further comprises a sewage discharge structure 30 arranged at the bottom of the shell 10. The sewage discharge structure 30 is connected to the immersion cavity 21, and is used to discharge the cutting liquid from the bottom of the shell 10.

[0032] Further, the immersion cavity 21 and the overflow cavity 22 are connected to different discharge channels, which can facilitate different post-processing steps. Since the cut silicon powder will settle at the bottom of the immersion cavity 21, the cutting liquid flowing out of the sewage discharge structure 30 connected to the immersion cavity 21 has a high concentration of silicon and a high content of impurities, which needs to be treated according to the sewage discharge standard in actual application. The cutting liquid flowing out of the overflow outlet 40 connected to the overflow cavity 22 has a low concentration of silicon and generally does not need to be subjected to subsequent post-processing steps.

[0033] ​In an alternative embodiment, the pollution discharge structure 30 comprises a pollution discharge inlet 31 arranged at the bottom of the shell 10, a pollution discharge channel 32, and a pollution discharge outlet 33 arranged at one or both ends of the shell, and the pollution discharge channel extends to one end or both ends of the bottom of the shell where the pollution discharge outlet 33 is arranged, as shown in Figure 4 and Figure 5 . The pollution discharge inlet 31 is arranged at the bottom of the shell 10 to smoothly discharge the waste cutting liquid containing silicon powder into the pollution discharge channel 32, and then the pollution discharge channel 32 discharges to the pollution discharge outlet 33. In a further preferred embodiment, the pollution discharge inlet 31 can be composed of multiple pollution discharge holes, and the number and arrangement of the pollution discharge holes are set according to actual needs. For example, the pollution discharge inlet 31 can be arranged as two rows of pollution discharge holes to better discharge the waste cutting liquid.

[0034] The cross section of the pollution discharge channel 32 can be of various shapes. In an alternative embodiment, as shown in Figure 5 , the cross section of the pollution discharge channel 32 is triangular, that is, two inclined baffles are arranged inside the shell 10 on the bottom surface of the shell 10, and the bottom surface of the shell 10 and the inclined baffles form the above-mentioned triangular cross section of the pollution discharge channel, that is, the bottom of the soaking cavity 21 is inclined. The pollution discharge inlet 31 is arranged on the inclined surface of the pollution discharge channel 32. Arranging the pollution discharge inlet 31 on the inclined surface can effectively prevent the deposited silicon powder from accumulating at the bottom of the soaking cavity 21, and the silicon powder can be smoothly discharged to the pollution discharge channel 32 during the process of sliding down the inclined surface.

[0035] In an alternative embodiment, the pollution discharge structure 30 further comprises a pollution discharge adjusting plate 34 covering the pollution discharge inlet 31, and the pollution discharge adjusting plate 34 is detachably connected to the bottom of the shell to adjust the flow rate of the cutting liquid entering the pollution discharge inlet 31.

[0036] The concentration of silicon powder in the soaking area increases due to cutting, and in order to reduce the concentration of silicon powder in the soaking area, in an alternative embodiment, the pollution discharge adjusting plate 34 comprises multiple pollution discharge flow holes corresponding to the pollution discharge inlet 31. In the case where multiple pollution discharge holes are arranged on the pollution discharge inlet 31, when the pollution discharge flow holes of the pollution discharge adjusting plate 34 are directly opposite the pollution discharge inlet 31, the pollution discharge flow is the largest, and when the pollution discharge flow holes of the pollution discharge adjusting plate 34 are misaligned with the pollution discharge inlet 31, the pollution discharge flow changes with the distance of misalignment, thereby achieving the purpose of controlling the pollution discharge flow, as shown in Figure 5The waste adjusting plate 34 is connected with the waste inlet 31 by bolt and nut, and in a preferred embodiment, the adjusting slot type hole and the pressing bolt are selected to achieve the effect that the waste flow hole of the waste adjusting plate 34 is overlapped with the waste inlet 31 by changing the position of the bolt in the adjusting slot type hole. By controlling the waste flow, the present application can ensure that the cutting liquid in the soaking cavity is always in the state of overflow, that is, the to-be-cut silicon can be always soaked in the cutting liquid to achieve the heat exchange purpose.

[0037] In the embodiment of the present application, the overflow outlet 40 and the waste outlet 33 are arranged at the end of the shell 10, and the cross section of the end of the shell 10 is a herringbone structure. In a preferred embodiment, the overflow outlet 40 and the waste outlet 33 are arranged on the two sides of the herringbone structure, that is, the cutting liquid overflowed and the cutting liquid flowed out of the waste outlet flow out of the two ends of the shell 10. In another preferred embodiment, the overflow outlet 40 and the waste outlet 33 are arranged on the two sides of the herringbone structure, and a partition plate 35 is arranged between the overflow outlet 40 and the waste outlet 33, as shown in Figure 2 The arrow direction is the flow direction of the cutting liquid.

[0038] The thickness of the cavity of the overflow outlet 40 and the waste outlet 33 can be set according to the actual flow requirement, and in an optional embodiment, the thickness of the cavity of the overflow outlet 40 and the waste outlet 33 is 5-10 mm, which can ensure the smooth flow of the cutting liquid and save the use area of the whole shell 10, thereby avoiding the waste of cost.

[0039] In an optional embodiment, for the case that the number of the overflow baffles 20 is two, the two overflow baffles 20 are arranged at the two ends of the shell 10, and the two overflow baffles 20 divide the overflow cavities 22 at the two ends of the shell, as shown in Figure 2 The overflow cavities at the two ends can ensure that the overflowed cutting liquid does not fall on the wire mesh 120. In a further preferred embodiment, the height difference between the overflow baffle 20 and the shell 10 is in the range of 10-20 mm (for example, 11 mm, 12 mm, 13 mm, 14 mm, 15 mm, 16 mm, 17 mm, 18 mm, 19 mm, etc.). If the height of the overflow baffle 20 is too low, the height of the soaking cavity 21 will be limited, so that the cut silicon cannot achieve the purpose of soaking and heat exchange. If the height of the overflow baffle 20 is too high, the height difference between the overflow baffle 20 and the shell 10 is too small, which can easily cause the overflowed cutting liquid to directly flow out of the shell 10 and fall on the wire mesh 120. Therefore, the height difference between the overflow baffle 20 and the shell 10 needs to be in the range of 10-20 mm.

[0040] In an alternative embodiment of the present application, a detachable filter screen 130 is arranged above the blowdown adjusting plate 34, and the aperture of the detachable filter screen 130 is 50-300 mesh. The filter screen can intercept impurities with large particles, and is arranged to be detachable, so as to facilitate regular removal and cleaning of debris.

[0041] In an alternative embodiment, one or more ultrasonic transducers 50 are arranged below at least one side of the bottom of the shell 10, which function is to increase the energy exchange between the cutting liquid and the cut silicon by means of ultrasonic waves. In a preferred embodiment, the ultrasonic transducers 50 are arranged at an angle of 45° with the horizontal direction. Since the cut silicon is in the form of vertical slices, if the ultrasonic transducers are arranged vertically below, the ultrasonic area is limited to the lower side of the silicon, and therefore, by arranging the ultrasonic transducers 50 at an angle of 45° with the horizontal direction, the area of the ultrasonic waves can be maximized, while covering the side and bottom surfaces of the silicon.

[0042] In the present application, the ultrasonic frequency and number of the ultrasonic transducers 50 can be determined according to the actual length of the shell 10, and in a preferred embodiment, the number of the ultrasonic transducers 50 is 5-10, and the ultrasonic frequency of the ultrasonic transducers 50 is 28-40 KHz.

[0043] In actual application, it is difficult to avoid a small amount of cutting liquid from spilling out of the shell 10, and therefore, in an alternative embodiment, a transparent outer shell can be arranged outside the ultrasonic transducers 50, so as to protect the continuous and stable operation of the ultrasonic transducers 50, and facilitate observation of the working condition of the ultrasonic transducers 50, so as to facilitate timely maintenance when problems occur.

[0044] In an alternative embodiment, in order to cooperate with the ultrasonic transducers 50, the present application is provided with a sound intensity tester 60 between the ultrasonic transducers 50 and the shell 10, which monitors the sound intensity of the ultrasonic transducers 50. By means of an online sound intensity tester, the number of working ultrasonic transducers is adjusted by PLC, and when the sound intensity is too high, the number of working ultrasonic transducers 50 is reduced.

[0045] It is worth noting that since heat is generated during the operation of the ultrasonic transducers 50, in a preferred embodiment, a low liquid level sensor 221 is further arranged inside the overflow chamber 22, which is used to monitor the liquid level inside the overflow chamber 22, i.e. the fluid condition inside the overflow chamber 22 can be determined by the low liquid level sensor 221. Redundant measures are taken, and when the liquid level of the overflow cutting liquid is lower than the liquid level of the low liquid level sensor 221, the transducer does not work.

[0046] In the present invention, a PLC control system controls the sound intensity meter 60 and ultrasonic transducer 50. Because the PLC control system incorporates microelectronics and computer technologies in addition to traditional controllers, it boasts high versatility, ease of use, wide adaptability, high reliability, strong anti-interference capabilities, and simple programming. The PLC control system can rationally control the number of ultrasonic transducers 50 activated when the sound intensity meter 60 detects that the ultrasonic transducer 50's sound intensity exceeds a set value, ensuring low noise and stable operation of the entire system.

[0047] In an alternative embodiment, the material receiving box of the present invention is made of carbon steel or stainless steel, and is fully welded or partially bolted with gaskets. Cables for the ultrasonic transducer 5 and low-level sensor 221 are connected to the receiving box using a penetrating seal, typically near the end, to avoid affecting the operation of the main rollers and wire mesh 120.

[0048] The technical solutions provided by the above-mentioned embodiments divide the interior of the shell into an overflow chamber and an immersion chamber by adding an overflow baffle in the material receiving box, so that during the cutting process, the cut crystalline silicon part can always be immersed in the cutting liquid in the immersion chamber, effectively improving the heat conduction of the silicon wafer during the cutting process and reducing the cutting temperature at the cutting point.

[0049] According to a second aspect of an embodiment of the present invention, a multi-wire cutting device is provided.

[0050] The multi-wire cutting device provided by the embodiment of the present invention is as follows: Figure 6 As shown, it includes: a workbench 70, a left main roller 80, a lower main roller 90, a right main roller 100, a cutting fluid nozzle 110 and a wire mesh 120 and the above-mentioned material receiving box; the material receiving box is arranged below the workbench 70 and above the lower main roller 90, and the open end of the material receiving box faces the workbench 70.

[0051] The left and right main rollers 80 and 100 are symmetrically arranged on either side of the workbench 70, with the lower main roller 90 positioned below the workbench 70. A wire mesh 120 is looped around the left, lower, and right main rollers 80, 90, and 100. The three main rollers work in unison, driving the wire mesh 120 to rotate, thereby cutting the silicon crystals.

[0052] Among them, the cutting fluid nozzle 110 is arranged on at least one side of the workbench 70, and is used to spray cutting fluid onto the wire mesh 120. In an optional embodiment, the cutting fluid nozzle 110 is symmetrically arranged on both sides of the workbench 70, and the setting distance should not be too far away from the workbench 70, so that the cutting fluid sprayed from the cutting fluid nozzle 110 can be brought into the cutting area by the wire mesh 120 in time. Placing the cutting fluid nozzle 110 on both sides of the workbench 70 can increase the spraying area of ​​the cutting fluid and help reduce the cutting temperature in the cutting area. In a further preferred embodiment, the distance between the cutting fluid nozzle 110 and the wire mesh 120 is 4 to 6 mm, the distance between the cutting fluid nozzle 110 and the silicon crystal to be cut is 30 to 50 mm, and the distance between the upper edge of the material receiving box and the wire mesh 120 is 30 to 40 mm.

[0053] In an optional embodiment, mounting brackets 140 are provided at both ends of the outer side of the housing 10. Figure 3 As shown, the entire receiving box is installed on the workbench 70.

[0054] like Figure 7 The flowchart of the third aspect of the present invention provides a process for preparing a multi-wire cutting heat dissipation component. The process for preparing the multi-wire cutting heat dissipation component may include the following steps:

[0055] Step S701: cutting the crystalline silicon to be cut, the wire mesh 120 brings the cutting liquid into the cutting area, and the cutting liquid flowing out of the cutting area flows into the immersion chamber 21;

[0056] In this step, the cutting fluid is sprayed onto the wire mesh 120 by the cutting fluid nozzle 110. When the wire mesh 120 moves toward the direction of the cut silicon, the cutting fluid sprayed on the wire mesh 120 will be brought into the cutting area. A portion of the cutting fluid falls into the immersion chamber 21 of the receiving box under the action of gravity in the gap between the silicon slices, and the other portion of the cutting fluid flows along the side of the silicon to be cut to the two ends of the silicon to be cut, and then flows into the immersion chamber 21 of the receiving box from the two ends.

[0057] Step S702: Adjust the cutting fluid flow rate sprayed from the cutting fluid nozzle 110 so that part of the cutting fluid flowing out of the cutting area flows out from the sewage discharge structure 30 at the bottom of the immersion chamber 21, and part overflows into the overflow chamber 22 and flows out from the overflow outlet 40; wherein, the ultrasonic transducer 50 and the sound intensity tester 60 are controlled by the PLC control system.

[0058] In this step, as the cutting liquid continuously flows into the immersion chamber 21 of the receiving box, it immerses the cut silicon crystals and is discharged from the overflow chambers 21 at both ends. When the cutting liquid in the receiving box submerges the low liquid level sensor 221, the ultrasonic transducer 50 and the acoustic energy detector 6 are turned on. The PLC control system controls the number of ultrasonic transducers 50 turned on based on the detection value of the acoustic energy detector 6.

[0059] In an alternative embodiment, after the cutting is completed, the ultrasonic transducer 50 and the acoustic energy detector 6 are closed at the same time, and the cutting fluid spray pipe 110 is closed. After the cutting fluid in the soaking cavity 21 is completely drained through the drain outlet 33, the filter screen is cleaned and replaced for the next use.

[0060] If the flow rate is found to be inappropriate during the cutting process, in an alternative embodiment, the device needs to be closed, and the cutting fluid is completely drained from the drain outlet 33 at the bottom of the soaking cavity 21, the covering area of the drain flow holes on the drain adjusting plate 34 and the drain inlet 31 is changed, and the cutting operation is re-performed.

[0061] In an alternative embodiment, the cutting fluid spray pipe 110 can have the following relationship between the cutting fluid injection flow rate, the drain flow rate of the drain structure 30, and the overflow flow rate of the overflow cavity 22: the drain flow rate is 20% to 30% (for example, 22%, 24%, 25%, 26%, 28%, etc.) of the injection flow rate, and the overflow flow rate is 70% to 80% (for example, 72%, 74%, 75%, 76%, 78%, etc.) of the injection flow rate.

[0062] The following is described with a specific embodiment.

[0063] The cutting fluid injection flow rate of the cutting fluid spray pipe 110 is 200 liters / minute, the drain flow rate of the drain structure 30 is 50 liters / minute, a total of 50 drain flow holes are provided on the drain adjusting plate 34, the drain flow hole diameter is 8 mm, and the corresponding offset between the drain flow hole and the drain inlet 31 is set to 6.05 mm; the overflow flow rate to the overflow cavity 22 is 150 liters / minute, at this time, the buffer amount of the overflow cavity 22 does not exceed 0.48 liters, and the total capacity of the overflow cavity 22 is 2.4 liters.

[0064] The present application provides the following technical solutions:

[0065] Technical solution 1. A receiving box, characterized in that it comprises a shell 10, an overflow baffle 20, and an overflow outlet 40 provided on at least one side of the shell 10, wherein,

[0066] One side of the shell 10 opposite to the bottom of the shell 10 is provided as an open structure;

[0067] The overflow baffle 20 is fixed to at least one end inside the shell 10, and the height of the overflow baffle 20 is lower than the height of the shell 10;

[0068] The overflow baffle 20 divides the shell 10 into a soaking cavity 21 and an overflow cavity 22,

[0069] The soaking cavity 21 is used to receive cutting fluid and cut silicon wafers;

[0070] The overflow cavity 22 is communicated with the overflow outlet 40, and is used for discharging the cutting liquid overflowing from the soaking cavity 21 through the overflow outlet 40.

[0071] Technical solution 2. The material receiving box according to technical solution 1, characterized in that the material receiving box further comprises a sewage discharge structure 30 arranged at the bottom of the shell 10.

[0072] The sewage discharge structure 30 is communicated with the soaking cavity 21, and is used for discharging the cutting liquid from the bottom of the shell 10.

[0073] Technical solution 3. The material receiving box according to technical solution 2, characterized in that the sewage discharge structure 30 comprises a sewage discharge inlet 31, a sewage discharge channel 32 and a sewage discharge outlet 33 arranged at the bottom of the shell 10.

[0074] Technical solution 4. The material receiving box according to technical solution 3, characterized in that the sewage discharge structure 30 further comprises a sewage discharge adjusting plate 34 covering the sewage discharge inlet 31.

[0075] The sewage discharge adjusting plate 34 is detachably connected to the bottom of the shell, and is used for adjusting the flow of the cutting liquid entering the sewage discharge inlet 31.

[0076] Technical solution 5. The material receiving box according to technical solution 3, characterized in that the overflow outlet 40 and the sewage discharge outlet 33 are arranged at the end of the shell 10.

[0077] Technical solution 6. The material receiving box according to technical solution 5, characterized in that the cross section of the end of the shell 10 is a herringbone structure.

[0078] The overflow outlet 40 and the sewage discharge outlet 33 are arranged on the two sides of the herringbone structure, respectively.

[0079] Alternatively,

[0080] The overflow outlet 40 and the sewage discharge outlet 33 are arranged on the two sides of the herringbone structure, respectively.

[0081] Technical solution 7. The material receiving box according to any one of technical solutions 1 to 6, characterized in that,

[0082] For the case that the number of the overflow baffles 20 is two,

[0083] The two overflow baffles 20 are arranged at the two ends of the shell 10, respectively.

[0084] The two overflow baffles 20 separate the overflow cavities 22 at the two ends of the shell.

[0085] The overflow cavity 22 is located at the same end as the overflow outlet 40.

[0086] Technical solution 8. The material receiving box according to technical solution 1, characterized in that,

[0087] The height difference between the overflow baffle 20 and the shell 10 is in the range of 10-20 mm.

[0088] Technical solution 9. The material receiving box according to technical solution 4, characterized in that, the pollution discharge adjusting plate 34 comprises a plurality of pollution discharge flow holes, wherein,

[0089] The plurality of pollution discharge flow holes correspond to the pollution discharge inlet 31.

[0090] Technical solution 10. The material receiving box according to technical solution 1, characterized in that,

[0091] A detachable filter screen 130 is arranged above the pollution discharge adjusting plate 34, and the aperture of the detachable filter screen 130 is 50-300 mesh.

[0092] Technical solution 11. The material receiving box according to technical solution 1, characterized in that,

[0093] One or more ultrasonic transducers 50 are arranged below at least one side of the bottom of the shell 10.

[0094] Technical solution 12. The material receiving box according to technical solution 1, characterized in that,

[0095] A low liquid level sensor 221 is arranged inside the overflow cavity 22 to monitor the liquid level inside the overflow cavity 22.

[0096] Technical solution 13. The material receiving box according to technical solution 11, characterized in that,

[0097] The arrangement direction of the ultrasonic transducer 50 is at an angle of 45° with the horizontal direction;

[0098] And / or,

[0099] The number of the ultrasonic transducers 50 is 5-10;

[0100] And / or,

[0101] The ultrasonic frequency of the ultrasonic transducer 50 is 28-40 KHz.

[0102] Technical solution 14. The material receiving box according to technical solution 13, characterized in that,

[0103] An acoustic intensity tester 60 is arranged between the ultrasonic transducer 50 and the shell 10, wherein the acoustic intensity tester 60 and the ultrasonic transducer 50 are controlled by a PLC control system; the acoustic intensity tester 60 is used for monitoring the acoustic intensity of the ultrasonic transducer 50.

[0104] Technical solution 15. A multi-wire cutting device, characterized in that it comprises a workbench 70, a left main roller 80, a lower main roller 90, a right main roller 100, a cutting fluid spray pipe 110, a wire mesh 120, and the receiving box of any one of technical solutions 1-13.

[0105] The left main roller 80 and the right main roller 100 are symmetrically arranged on both sides of the workbench 70, and the lower main roller 90 is arranged below the workbench 70.

[0106] The wire mesh 120 is sleeved on the outer side of the left main roller 80, the lower main roller 90, and the right main roller 100.

[0107] The cutting fluid spray pipe 110 is arranged on at least one side of the workbench 70, and is used for spraying cutting fluid on the wire mesh 120.

[0108] The receiving box is arranged below the workbench 70 and above the lower main roller 90, and the open end of the receiving box faces the workbench 70.

[0109] Technical solution 16. A cutting process of the multi-wire cutting device of technical solution 15, characterized in that it comprises:

[0110] Step (a), cutting the to-be-cut silicon, the wire mesh 120 brings cutting fluid into the cutting area, and the cutting fluid flowing out of the cutting area flows into the soaking cavity 21;

[0111] Step (b), adjusting the flow of cutting fluid sprayed by the cutting fluid spray pipe 110, so that part of the cutting fluid flowing out of the cutting area flows out of the sewage structure 30 at the bottom of the soaking cavity 21, and part of the cutting fluid overflows to the overflow cavity 22 and flows out from the overflow outlet 40.

[0112] The above steps are provided only to help understand the method, structure and core idea of the present application. For those skilled in the art in this technical field, without departing from the principles of the present application, the present application can be improved and modified in several ways, and these improvements and modifications also belong to the scope of protection of the claims of the present application.

Claims

1. A material receiving box, characterized in that: include: A shell (10), an overflow baffle (20), an overflow outlet (40) provided on at least one side of the shell (10), and a sewage discharge structure (30) provided at the bottom of the shell (10), wherein: In the shell (10), a surface opposite to the bottom of the shell (10) is open; The overflow baffle (20) is fixed to at least one end inside the shell (10), and the height of the overflow baffle (20) is lower than the height of the shell (10); The overflow baffle (20) separates the housing (10) into an immersion chamber (21) and an overflow chamber (22). The immersion chamber (21) is used to receive cutting liquid and cut silicon wafers; The overflow chamber (22) is connected to the overflow outlet (40) and is used to discharge the cutting liquid overflowing from the soaking chamber (21) through the overflow outlet (40); The sewage discharge structure (30) is connected to the soaking chamber (21), and the sewage discharge structure (30) is used to discharge the cutting liquid from the bottom of the shell (10); the sewage discharge structure (30) comprises: a sewage discharge inlet (31) arranged at the bottom of the shell (10), and a sewage discharge regulating plate (34) covering the sewage discharge inlet (31); the sewage discharge regulating plate (34) is detachably connected to the bottom of the shell, and is used to regulate the flow rate of the cutting liquid entering the sewage discharge inlet (31); the bottom of the soaking chamber (21) is an inclined surface, and the sewage discharge inlet (31) is arranged on the inclined surface.

2. The material receiving box according to claim 1, characterized in that: The sewage discharge structure (30) comprises a sewage discharge channel (32) and a sewage discharge outlet (33).

3. The material receiving box according to claim 2, characterized in that: The overflow outlet (40) and the sewage outlet (33) are arranged at the end of the shell (10).

4. The material receiving box according to claim 3, characterized in that: The cross-section of the end portion of the shell (10) is a herringbone structure; The overflow outlet (40) and the sewage outlet (33) are respectively arranged on both sides of the herringbone structure; or, The overflow outlet (40) and the sewage outlet (33) are provided on both sides of the herringbone structure, and a partition plate (35) is provided between the overflow outlet (40) and the sewage outlet (33).

5. The material receiving box according to any one of claims 1 to 4, characterized in that: For the case where there are two overflow baffles (20), The two overflow baffles (20) are respectively arranged at two ends of the shell (10); The two overflow baffles (20) separate an overflow cavity (22) at both ends of the shell; The overflow chamber (22) and the overflow outlet (40) connected thereto are located at the same end.

6. The material receiving box according to claim 1, characterized in that: The height difference between the overflow baffle (20) and the housing (10) is within the range of 10 to 20 mm.

7. The material receiving box according to claim 1, characterized in that: The sewage discharge regulating plate (34) includes a plurality of sewage discharge flow holes, wherein: The plurality of sewage discharge flow holes correspond to the sewage discharge inlet (31).

8. The material receiving box according to claim 1, characterized in that: A detachable filter screen (130) is provided above the sewage discharge regulating plate (34), and the aperture of the detachable filter screen (130) is 50-300 meshes.

9. The material receiving box according to claim 1, characterized in that: One or more ultrasonic transducers (50) are provided below at least one side of the bottom of the housing (10).

10. The material receiving box according to claim 1, characterized in that: A low liquid level sensor (221) is provided inside the overflow chamber (22) for monitoring the liquid level inside the overflow chamber (22).

11. The material receiving box according to claim 9, characterized in that: The ultrasonic transducer (50) is arranged at an angle of 45° to the horizontal direction; and / or, The number of the ultrasonic transducers (50) is 5 to 10; and / or, The ultrasonic transducer (50) has an ultrasonic frequency of 28-40 kHz.

12. The material receiving box according to claim 11, characterized in that: A sound intensity tester (60) is provided between the ultrasonic transducer (50) and the housing (10), wherein the sound intensity tester (60) and the ultrasonic transducer (50) are both controlled by a PLC control system; the sound intensity tester (60) is used to monitor the sound intensity of the ultrasonic transducer (50).

13. A multi-wire cutting device, characterized in that: include: A workbench (70), a left main roller (80), a lower main roller (90), a right main roller (100), a cutting fluid nozzle (110), a wire mesh (120), and a material receiving box according to any one of claims 1 to 12; The left main roller (80) and the right main roller (100) are symmetrically arranged on both sides of the workbench (70), and the lower main roller (90) is arranged below the workbench (70); The wire mesh (120) is wrapped around the outer sides of the left main roller (80), the lower main roller (90) and the right main roller (100); The cutting fluid nozzle (110) is provided on at least one side of the workbench (70) and is used to spray cutting fluid onto the wire mesh (120); The material receiving box is arranged below the workbench (70) and above the lower main roller (90), and the open end of the material receiving box faces the workbench (70).

14. A cutting process of the multi-wire cutting equipment according to claim 13, characterized in that: include: Step (a), cutting the crystalline silicon to be cut, the wire mesh (120) brings the cutting liquid into the cutting area, and the cutting liquid flowing out of the cutting area flows into the immersion chamber (21); Step (b), adjusting the flow rate of the cutting fluid sprayed from the cutting fluid nozzle (110) so that a portion of the cutting fluid flowing out of the cutting area flows out from the drainage structure (30) at the bottom of the immersion chamber (21), and a portion overflows into the overflow chamber (22) and flows out from the overflow outlet (40).

Citation Information

Patent Citations

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