A SiC-based AlScN template for high-frequency and high-performance SAW devices and a preparation method thereof

Abstract

The present invention discloses a silicon carbide-based AlScN template for high-frequency and high-performance SAW devices. The silicon carbide-based AlScN template is a multi-layer structure, with single-crystal silicon carbide as the substrate, and a SiO<subgt;2< / subgt; layer, a metal passivation layer, an AlN seed layer, a low-concentration Sc-doped AlScN layer, and a high-concentration Sc-doped AlScN layer are sequentially grown on the polished surface of the silicon carbide. By using the preparation method of the present invention, an AlScN thin film with high crystal quality, high phase velocity, low surface roughness, high temperature stability, and high Sc concentration can be prepared. The silicon carbide substrate provides a relatively high phase velocity; the SiO<subgt;2< / subgt; layer compensates for the disadvantage of poor temperature stability of the high-concentration Sc-doped AlScN thin film; the AlN seed layer has a small lattice mismatch with AlScN and improves the crystal quality; the low-concentration Sc-doped AlScN layer avoids the premature precipitation of Sc elements and reduces the lattice mismatch; the high-concentration Sc-doped AlScN layer provides good piezoelectric properties. The use of this multi-layer structure can be better applied to bulk acoustic wave and surface acoustic wave device-based applications.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor material preparation, and particularly relates to an aluminum scandium nitride template structure and a preparation method thereof. Background Art

[0002] With the development of 5G communication technology, the addition of new 5G frequency bands, the increase in the number of original frequency bands, and the in-depth application of MIMO and CA technologies, the demand for filters is increasing, and the requirements for the preparation of radio frequency front-ends are also increasing day by day. Therefore, materials with higher piezoelectric properties are needed to prepare filter devices SAW / BAW.

[0003] The core of preparing high-performance radio frequency filters lies in the characteristics and crystallization quality of the piezoelectric material of the filter substrate. Compared with traditional piezoelectric materials such as ZnO, PZT, LT / LN, etc., AlN thin film materials are one of the ideal piezoelectric materials for 5G high-performance FBAR / BAW radio frequency filters due to their excellent physical properties such as high resistivity, high thermal conductivity, high stability, and high acoustic wave transmission rate, and have been maturely applied in the industrial field. For example, the acoustic wave velocity of AlN thin film materials with a certain preferred orientation is relatively high (the longitudinal wave velocity can reach 11000 m / s, and the transverse wave velocity is about 6000 m / s), which makes AlN thin films currently the first choice for the preparation of GHz high-frequency resonant devices, filter devices, etc. However, although it has obvious performance advantages compared with traditional piezoelectric materials such as ZnO, PZT, LT / LN, etc., AlN thin films also have their inherent disadvantages, that is, the piezoelectric coefficient of AlN thin films grown along the c-axis direction is small (d33 = 5 - 6 pm / V), which makes the application of SAW devices based on AlN thin films (especially in the high-frequency band) encounter bottlenecks. To solve this bottleneck of AlN thin film materials and at the same time retain other excellent characteristics, an effective method is to dope it to improve its piezoelectric performance. Currently, the piezoelectric performance of the material is effectively improved by doping a high content of Sc element, thereby improving the electromechanical coupling coefficient of the filter device. However, since the mixing entropy of the ternary nitride alloy is positive due to the incorporation of a high Sc concentration, the thin film is in a metastable state, resulting in a tendency for the material itself to phase separate. Therefore, the preparation conditions of high-doped Sc content and high-quality AlScN thin films are extremely sensitive, which has become an important problem restricting the large-scale manufacturing of AlScN thin film materials and their large-scale industrial applications downstream. After doping with a high concentration of Sc element (>30 at%), the phase velocity of the material will decrease sharply, resulting in a decrease in the frequency of the filter device. At the same time, abnormal nucleation is likely to occur on the surface of the thin film, the crystallization quality drops sharply, the surface roughness deteriorates severely, and the temperature stability decreases, making it difficult to prepare high-frequency and high-performance SAW / BAW devices. Summary of the Invention

[0004] Based on the above-mentioned technical problems currently existing in Sc-doped AlN templates, the present invention intends to provide a multi-layered AlScN template structure with silicon carbide as the substrate and its preparation method to solve the problems of a sharp decrease in material phase velocity, abnormal nucleation, large surface roughness, and low temperature stability after AlN is doped with high Sc concentration.

[0005] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions.

[0006] The present invention provides a silicon carbide-based AlScN template for high-frequency, high-performance SAW devices. The silicon carbide-based AlScN template is a multi-layer structure with silicon carbide as the substrate. On the polished surface of the silicon carbide, a SiO2 layer, a metal passivation layer, an AlN seed layer, a low-concentration Sc-doped AlScN layer, and a high-concentration Sc-doped AlScN layer are sequentially grown. The SiO2 layer has a thickness of 10-1000nm, the metal passivation layer has a thickness of 5-1000nm; the AlN seed layer has a thickness of 10-5000nm; the low-concentration Sc-doped AlScN layer has a thickness of 10-5000nm, and the chemical formula is Al 1-x Sc x N, where x≤0.3; the thickness of the high-concentration Sc-doped AlScN layer is 10-5000nm, and the chemical formula is Al 1-y Sc y N, where 0.3≤y≤0.6.

[0007] Furthermore, the frequency temperature coefficient of the silicon carbide-based AlScN template is lower than -14.73 ppm / K, and the phase velocity reaches above 5500 m / s.

[0008] The present invention also provides a method for preparing the above-mentioned silicon carbide-based AlScN template, comprising the following steps:

[0009] 1) Prepare a silicon carbide substrate. The silicon carbide substrate is a single-sided polished single crystal with a roughness of less than 0.3 nm. Using silicon carbide as a substrate material can provide a higher phase velocity.

[0010] 2) Pre-treatment of the silicon carbide substrate surface: ion bombardment is used to remove surface oxides and contaminants;

[0011] 3) A SiO2 layer is prepared on the surface of the pretreated SiC substrate; the SiO2 layer has good temperature stability, can enhance the temperature stability of the SiC-based AlScN template, and reduce the temperature frequency coefficient.

[0012] 4) Prepare a metal buffer layer on the SiO2 layer. The metal buffer layer effectively passivates the SiO2 film, effectively preventing the formation of amorphous SiNx with the SiO2 during the subsequent growth of the AlN seed layer. The metal buffer layer can be a metal Al layer or a metal tungsten layer.

[0013] 5) Prepare an AlN seed layer on the metal buffer layer; the AlN seed layer can compensate for the lack of phase velocity of AlScN, and at the same time has a smaller lattice mismatch with AlScN, improving the crystallization quality of the AlScN layer, reducing abnormal nucleation, lowering the surface roughness, and improving piezoelectric and other properties.

[0014] 6) Prepare an Al 1-x Sc x N layer with a low Sc concentration on the AlN seed layer, where x ≤ 0.3; by first growing a layer of AlScN with a low Sc concentration on the AlN seed layer, compared with directly forming an AlScN layer with a high Sc concentration on the seed layer, it can avoid the premature precipitation of Sc elements, reduce the valence band potential barrier difference between the last barrier layer and it, that is, reduce the lattice mismatch between the two, avoid introducing large strain and polarization fields, reduce the potential barrier peak formed by the valence band of the electron blocking layer, and reduce the hindrance to hole injection.

[0015] 7) Prepare an Al 1-x Sc x N layer with a high Sc concentration on the Al 1-y Sc y N layer, where 0.3 ≤ y ≤ 0.6. Improve the piezoelectric properties of the AlScN template based on silicon carbide.

[0016] Further, in the above step 5) of growing the AlN seed layer, the MOCVD method or the magnetron sputtering method is used.

[0017] Further, in the above steps 6) and 7) of preparing the Al 1-x Sc x N layer with a low Sc concentration or the Al 1-y Sc y N layer with a high Sc concentration, the magnetron sputtering method is used.

[0018] Preferably, in step 6), the magnetron sputtering method is used, and the preparation process is as follows: the nitrogen flow rate is 5 - 400 sccm, the argon flow rate is 5 - 400 sccm, the total gas pressure in the chamber is 0.1 - 10 pa, the sputtering power is 0.1 - 15 KW, and the temperature is 30 - 1000 °C;

[0019] Preferably, in step 7), the magnetron sputtering method is used, and the preparation process is as follows: the nitrogen flow rate is 5 - 400 sccm, the argon flow rate is 5 - 200 sccm, the total gas pressure in the chamber is 0.1 - 5 pa, the sputtering power is 0.1 - 15 KW, and the temperature is 30 - 600 °C.

[0020] The beneficial effects of the present invention are as follows:

[0021] Using the preparation method of the present invention, AlScN thin films with high crystal quality, high phase velocity, low surface roughness, high temperature stability, and high Sc concentration can be prepared. Compared with traditional Si substrates, using a silicon carbide substrate can reduce the adverse effects caused by lattice mismatch and can provide a relatively high phase velocity at the same time. Using a SiO2 layer can compensate for the drawback of poor temperature stability of the high-Sc-concentration AlScN thin film. Growing an Al layer on the SiO2 thin film can effectively passivate the SiO2 thin film and prevent the formation of amorphous SiN x , and at the same time provide a buffer layer for the next growth of AlN. Growing an AlN seed layer on the Al layer has a smaller lattice mismatch with AlScN, can improve the crystal quality, can effectively inhibit the generation of abnormal nucleation, and can at the same time compensate for the loss of the phase velocity of the AlScN thin film. First grow a low-Sc-concentration Al 1-X Sc X N layer on the AlN seed layer to avoid the premature precipitation of Sc elements, reduce the valence band barrier difference between the last barrier layer and it, that is, reduce the lattice mismatch between the two, avoid introducing large strain and polarization fields, reduce the barrier peak formed by the valence band of the electron blocking layer, and reduce the hindrance to hole injection. Finally, grow a high-Sc-concentration Al 1-y Sc y N layer to improve the piezoelectric performance of the multilayer structure. The template prepared by using this multilayer structure can be better applied to applications based on bulk acoustic wave and surface acoustic wave devices, such as sensors, actuators, and surface acoustic wave-based microfluidics, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 is a schematic diagram of the preparation process of the silicon carbide-based Al 1-x Sc x N template of the present invention.

[0023] Figure 2 is a structural flowchart of the preparation of the silicon carbide-based Al 1-x Sc x N template of the present invention.

[0024] Figure 3 is the X-ray 002 diffraction rocking curve graph (left) of the silicon carbide-based AlScN template of Example 1 of the present invention, and its atomic force microscope topography graph (right).

[0025] Figure 4 is the X-ray 002 diffraction rocking curve graph (left) of the silicon carbide-based AlScN template with a conventional structure of Comparative Example 1, and its atomic force microscope topography graph (right). DETAILED DESCRIPTION OF THE INVENTION

[0026] To further understand the present invention, the preferred embodiments of the present invention will be described below in conjunction with examples. However, it should be understood that these descriptions are only for further explaining the features and advantages of the present invention, rather than limiting the claims of the present invention.

[0027] Example 1

[0028] A silicon carbide-based AlScN template structure and preparation method for high-frequency and high-performance SAW devices mainly include: preparation of a silicon carbide substrate 1 (S1), surface pretreatment of the substrate (S2), growth of a SiO2 layer 2 (S3), growth of an Al layer 3 (S4), growth of an AlN seed layer 4 (S5), growth of an Al 1-x Sc x N low Sc concentration layer 5 (S6), growth of an Al 1-x Sc x N high Sc concentration layer 6 (S7). As Figure 1 2 shown, they are respectively a schematic diagram of the preparation process of the silicon carbide-based AlScN template and a schematic diagram of the preparation process of the silicon carbide-based AlScN template in this embodiment. Below, the silicon carbide-based AlScN template structure and preparation method of this embodiment will be described in detail with reference to the accompanying drawings.

[0029] 1) Prepare the silicon carbide substrate 1 (S1). The crystal orientation of the silicon carbide substrate 1 is (0001), the crystal form is 4H, the conduction type is semi-insulating, the polished substrate wafer has an EPI-ready polished surface that has been cleaned by RCA, the roughness is less than 0.3 nm, and the back surface is of the grinding grade with a roughness of 1 ± 0.2 μm.

[0030] 2) Pretreat the surface of the silicon carbide substrate 1 (S2). The ion bombardment technology is adopted, and the pretreatment conditions are: the radio frequency power is 20W, the argon gas flow range is 300 sccm, and the duration is 60 s. Through ion bombardment pretreatment, the oxide impurities on the surface of the substrate material can be removed, and with the accumulation of bombardment energy, the activity and migration ability of the adsorbed atoms are enhanced.

[0031] 3) Grow the SiO2 layer 2 (S3). Prepare a 100-nm SiO2 layer to make up for the temperature stability of the device.

[0032] 4) Grow the aluminum metal layer 3 (S4). A 10-nm Al layer is prepared by magnetron sputtering technology, which can effectively passivate the SiO2 film and effectively prevent the formation of amorphous SiN x

[0033] ​​5) Grow the AlN seed layer 4 (S5). Using magnetron sputtering, the reaction chamber pressure is 0.1 Pa, the nitrogen flow rate is 100 sccm, the argon flow rate is 10 sccm, the sputtering power is 1 KW, the temperature is 300 °C, and the film thickness is 500 nm. The AlN seed layer can make up for the lack of AlScN phase velocity. At the same time, it has a smaller lattice mismatch with AlScN, improves the crystallization quality, and reduces abnormal nucleation.

[0034] 6) Grow the Al 0.9 Sc 0.1 N low Sc concentration layer 5 (S6). Using magnetron sputtering (Sputter), the Sc element content in the AlSc alloy target is 15 at%, the reaction chamber pressure is 0.1 Pa, the nitrogen flow rate is 100 sccm, the argon flow rate is 10 sccm, the sputtering power is 3 KW, the temperature is 250 °C, and the film thickness is 300 nm. The low Sc concentration layer avoids the premature precipitation of Sc elements, reduces the valence band potential barrier difference between the last barrier layer and the upper high-concentration AlScN layer, that is, reduces the lattice mismatch between the two, avoids introducing large strain and polarization fields, reduces the potential barrier peak formed by the valence band of the electron blocking layer, and reduces the hindrance to hole injection;

[0035] 7) Grow the Al 0.57 Sc 0.43 N high Sc concentration layer 6 (S7). Using magnetron sputtering (Sputter), the Sc element content in the AlSc alloy target is 43 ± 1 at%, the reaction chamber pressure is 0.1 Pa, the nitrogen flow rate is 100 sccm, the argon flow rate is 10 sccm, the sputtering power is 4 KW, the temperature is 200 °C, and the film thickness is 1000 nm. The silicon carbide-based AlScN template of this embodiment is obtained.

[0036] Example 2

[0037] Still, as Figure 1 、 2 , the structure and preparation method of the silicon carbide-based AlScN template of this embodiment will be described in detail with reference to the accompanying drawings.

[0038] 1) Prepare the silicon carbide substrate material 1 (S1). The silicon carbide substrate 1 is a standard specification polished substrate wafer for production. The surface is an EPI-ready polished surface cleaned by RCA, with a roughness less than 0.3 nm, and the back is a grinding grade with a roughness of 1 ± 0.2 μm.

[0039] 2) Pretreat the surface of the substrate 1 (S2). The pretreatment conditions are: the radio frequency power is 20 W, the argon flow rate range is 300 sccm, and the duration is 60 s. Using the pretreatment technology, the oxide impurities on the surface of the substrate material can be removed, the bombardment energy is accumulated, and the activity and migration ability of the adsorbed atoms are enhanced.

[0040] 3) Grow the SiO2 layer 2 (S3). Prepare a 100 nm SiO2 layer to compensate for temperature stability.

[0041] 4) Grow the tungsten metal layer 3 (S4). Prepare a 200 nm tungsten metal layer using magnetron sputtering technology, which can effectively passivate the SiO2 thin film and effectively prevent the formation of amorphous SiN x .

[0042] 5) Grow the AlN seed layer 4 (S5). Use MOCVD technology to grow an AlN buffer layer, using trimethylaluminum and ammonia as raw materials for preparing the AlN thin film, with a film thickness of 500 nm. The AlN seed layer can compensate for the lack of phase velocity of AlScN, and at the same time has a smaller lattice mismatch with AlScN, improving the crystallization quality and reducing abnormal nucleation.

[0043] 6) Grow the Al 0.8 Sc 0.2 N low Sc concentration layer 5 (S6). Use magnetron sputtering (Sputter), with the Sc element content in the AlSc alloy target being 20 ± 1 at%, the reaction chamber pressure being 0.1 pa, the nitrogen flow rate being 90 sccm, the argon flow rate being 15 sccm, the sputtering power being 3 KW, the temperature being 250 °C, and the film thickness being 500 nm. The low Sc concentration layer avoids the premature precipitation of Sc elements, reduces the valence band potential barrier difference between the last barrier layer and it, that is, reduces the lattice mismatch between the two, avoids introducing large strain and polarization fields, reduces the potential barrier peak formed by the valence band of the electron blocking layer, and reduces the hindrance to hole injection;

[0044] 7) Grow the Al 0.68 Sc 0.32 N high Sc concentration layer 6 (S7). Use magnetron sputtering (Sputter), with the Sc element content in the AlSc alloy target being 32 ± 1 at%, the reaction chamber pressure being 0.1 pa, the nitrogen flow rate being 100 sccm, the argon flow rate being 6 sccm, the sputtering power being 4 KW, the temperature being 200 °C, and the film thickness being 500 nm. The silicon carbide-based AlScN template of this embodiment is obtained.

[0045] Comparative Example 1

[0046] This comparative example uses a conventional structure AlScN template prepared by a conventional method, and the high-concentration AlScN layer is directly deposited on a silicon carbide substrate, and the steps are as follows:

[0047] 1) Follow step 1) of Example 1 to prepare a silicon carbide substrate: The silicon carbide substrate is a standard - specification single - crystal, polished wafer. The surface is an EPI - ready polished surface cleaned by RCA, with a roughness less than 0.3 nm, and the back is at the grinding level with a roughness of 1 ± 0.2 μm.

[0048] 2) Follow step 2) of Example 1 to pre - treat the surface of the silicon carbide substrate 1: Use the ion bombardment technique. The pre - treatment conditions are: radio - frequency power is 20 W, the argon gas flow rate range is 300 sccm, and the duration is 60 s. Through ion - bombardment pre - treatment, oxide impurities on the surface of the substrate material can be removed, and with the accumulation of bombardment energy, the activity and migration ability of adsorbed atoms are enhanced.

[0049] 3) Follow step 7) of Example 1 to grow Al 0.57 Sc 0.43 N high - Sc - concentration layer. Use the magnetron sputtering method (Sputter). The reaction chamber pressure is 0.1 Pa, the nitrogen gas flow rate is 100 sccm, the argon gas flow rate is 10 sccm, the sputtering power is 4 KW, the temperature is 200 °C, and the film thickness is 1000 nm.

[0050] Perform various performance tests on the silicon carbide - based AlScN templates fabricated in each example and comparative example. Test its crystallization quality through the rocking curve and test its surface roughness using an atomic force microscope. As shown in Figure 3 and Figure 4 , they are respectively the rocking - curve test chart and atomic - force - microscope test chart of the silicon carbide - based AlScN templates prepared in Example 1 and Comparative Example 1. From the test results in the figures, it can be seen that the HRXRD full - width at half - maximum @(002) of the silicon carbide - based AlScN template prepared in Example 1 is 1.4°, and the surface roughness RMS value is 2 - 3 nm; the HRXRD full - width at half - maximum @(002) of the silicon carbide - based AlScN template prepared in Comparative Example 1 is 2.5°, and the surface roughness RMS value is 8 - 10 nm. Although the silicon carbide substrates and process parameters such as the process for fabricating the AlScN layer on the surface layer in Example 1 and Comparative Example 1 are exactly the same, obviously, in Example 1, due to the addition of the AlN seed layer and the AlScN transition layer with low - concentration Sc, finally, a high - doped Sc - concentration Al 1-x Sc x N thin - film layer has high crystallization quality and few abnormal nucleations, which can effectively improve the electromechanical coupling coefficient. The specific test data are listed in Table 1.

[0051] The piezoelectric properties, phase velocity, and frequency temperature coefficient of the silicon carbide-based AlScN templates fabricated in each of the examples and comparative examples were also tested. The test data are also shown in Table 1. The test results show that the silicon carbide-based AlScN template of the present invention can effectively increase the phase velocity. For example, the phase velocity in Comparative Example was 3600 m / s, which was increased to 5500 m / s in Example 1 and 5700 m / s in Example 2, meeting the requirements of high-frequency SAW devices. At the same time, as can be seen from the data in the table, the frequency temperature coefficient of the Al 1-x Sc x N thin film layer is low. For example, the frequency temperature coefficient in Example 2 was reduced to -13.51 ppm / K, improving the temperature stability compared to the role of the SiO2 layer in Comparative Example 1. The silicon carbide-based AlScN template structure and preparation method of the present invention provide a solution for high-frequency, high-performance, and high electromechanical coupling coefficient SAW devices.

[0052] Table 1: Comparison of performance parameters of AlScN templates fabricated in each example and comparative example

[0053]

[0054] The description of the above embodiments is only used to help understand the method and its core idea of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

Claims

1. A silicon carbide-based AlScN template for high-frequency and high-performance SAW devices, characterized in that: The silicon carbide-based AlScN template is a multi-layer structure. Using single-crystal silicon carbide as the substrate, a SiO2 layer, a metal passivation layer, an AlN seed layer, a low-concentration Sc-doped AlScN layer, and a high-concentration Sc-doped AlScN layer are sequentially grown on the polished surface of the silicon carbide. Wherein: The chemical formula of the low-concentration Sc-doped AlScN layer is Al 1-x Sc x N, where x ≤ 0.3; The chemical formula of the high-concentration Sc-doped AlScN layer is Al 1-y Sc y N, where 0.3 ≤ y ≤ 0.

6.

2. The silicon carbide-based AlScN template for high-frequency and high-performance SAW devices according to claim 1, wherein: The thickness of the SiO2 layer is 10 - 1000 nm, the thickness of the metal passivation layer is 5 - 1000 nm; the thickness of the AlN seed layer is 10 - 5000 nm; the thickness of the low-concentration Sc-doped AlScN layer is 10 - 5000 nm; the thickness of the high-concentration Sc-doped AlScN layer is 10 - 5000 nm.

3. The silicon carbide-based AlScN template for high-frequency and high-performance SAW devices according to claim 1, wherein: The frequency temperature coefficient of the silicon carbide-based AlScN template is lower than -14.73 ppm / K, and the phase velocity reaches more than 5500 m / s.

4. A method for preparing a silicon carbide-based AlScN template for a high-frequency and high-performance SAW device according to any one of claims 1-3, characterized in that, It includes the following steps: 1) Prepare a silicon carbide substrate; the silicon carbide substrate uses a single-sided polished single crystal wafer. 2) Pretreat the surface of the silicon carbide substrate. 3) Prepare a SiO2 layer on the surface of the pretreated silicon carbide substrate. 4) Prepare a metal layer on the SiO2 layer. 5) Prepare an AlN seed layer on the metal layer. 6) Prepare an Al 1-x Sc x N layer with a low Sc concentration on the AlN seed layer, where x ≤ 0.3; 1-x Sc x N layer, where x ≤ 0.3; 7) On the Al layer with low Sc concentration 1-x Sc x prepare an Al layer with high Sc concentration 1-y Sc y N layer, where 0.3 ≤ y ≤ 0.

6.

5. The preparation method of the silicon carbide-based AlScN template for a high-frequency and high-performance SAW device according to claim 4, characterized in that: In step 2), the ion bombardment method is used to remove the oxides and contaminants on the surface of the silicon carbide substrate.

6. The preparation method of a silicon carbide-based AlScN template for a high-frequency and high-performance SAW device according to claim 4, characterized in that: In step 5), the MOCVD method or the magnetron sputtering method is used to grow the AlN seed layer.

7. The preparation method of the silicon carbide-based AlScN template for high-frequency and high-performance SAW devices according to claim 4, characterized in that: In step 6) or step 7), the magnetron sputtering method is used.

8. The preparation method of a silicon carbide-based AlScN template for a high-frequency and high-performance SAW device according to claim 7, characterized in that: In step 6), the preparation process using the magnetron sputtering method is: the nitrogen flow rate is 5 - 400 sccm, the argon flow rate is 5 - 400 sccm, the total gas pressure in the chamber is 0.1 - 10 pa, the sputtering power is 0.1 - 15 KW, and the temperature is 30 - 1000 °C.

9. The preparation method of the silicon carbide-based AlScN template for high-frequency and high-performance SAW devices according to claim 7, characterized in that: In step 7), the preparation process using the magnetron sputtering method is: the nitrogen flow rate is 5 - 400 sccm, the argon flow rate is 5 - 200 sccm, the total gas pressure in the chamber is 0.1 - 5 pa, the sputtering power is 0.1 - 15 KW, and the temperature is 30 - 600 °C.

10. The preparation method of a silicon carbide-based AlScN template for a high-frequency and high-performance SAW device according to claim 4, characterized in that: The metal layer is a metal Al layer or a metal tungsten layer.

Images