Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium

Abstract

This invention provides a technique for adapting to environmental changes at each substrate mounting surface in an apparatus configured with multiple substrate mounting surfaces. To address the aforementioned issues, a substrate processing apparatus is provided, comprising: a processing container for processing substrates; a gas supply unit for supplying gas to the processing container; multiple substrate mounting surfaces disposed within the processing container; a gas supply unit having multiple distribution pipes corresponding to the substrate mounting surfaces; a detection unit for detecting the gas supply amount of the distribution pipes or information about components corresponding to the substrate mounting surfaces; a determination unit for determining a state level based on the detected information; a selection unit for selecting the substrate mounting surface as the destination for moving the substrate according to the state level; and a control unit for controlling each component.

Description

Technical Field

[0001] This disclosure relates to a method for manufacturing a semiconductor device, a substrate processing apparatus, and a recording medium. Background Technology

[0002] Substrate processing apparatuses include those that process multiple substrates simultaneously to improve production efficiency. For example, there is an apparatus in which multiple substrate mounting surfaces are arranged in a processing chamber, and substrates are processed while each substrate mounting surface is loaded with a substrate (Patent Document 1).

[0003] Existing technical documents

[0004] Patent Document 1: JP 2012-222024 Summary of the Invention

[0005] When processing substrates, the environment of the processing chamber sometimes changes over time.

[0006] In apparatuses with multiple substrate mounting surfaces, the environment sometimes changes depending on each substrate mounting surface. This change in environment refers to variations that occur during continuous substrate processing, such as the deterioration of components corresponding to their respective substrate mounting surfaces. Furthermore, if the substrate processing involves film formation, this refers to the thickness of the film deposited on or around the substrate mounting surface.

[0007] Therefore, this disclosure provides a technique that can cope with changes in the environment of each substrate mounting surface in an apparatus of the type that is configured with multiple substrate mounting surfaces.

[0008] One aspect of this disclosure provides a technology comprising: a processing container for processing a substrate; a gas supply unit for supplying gas to the processing container; a plurality of substrate mounting surfaces disposed within the processing container; a gas supply unit having a plurality of distribution pipes corresponding to the substrate mounting surfaces; a detection unit for detecting the gas supply amount of the distribution pipes or information about components corresponding to the substrate mounting surfaces; a determination unit for determining a state level based on the detected information; a selection unit for selecting the substrate mounting surface as the destination for moving the substrate according to the state level; and a control unit for controlling each component.

[0009] Invention Effects

[0010] According to the technology disclosed herein, it is possible to provide a technology that can also cope with changes in the environment of each substrate mounting surface in an apparatus in which the substrate mounting surface is configured in a circumferential shape. Attached Figure Description

[0011] Figure 1 This is an explanatory diagram illustrating the substrate processing apparatus of the first embodiment.

[0012] Figure 2 This is an explanatory diagram illustrating the substrate processing apparatus of the first embodiment.

[0013] Figure 3 This is an explanatory diagram illustrating the substrate processing apparatus of the first embodiment.

[0014] Figure 4 This is an explanatory diagram illustrating the substrate processing apparatus of the first embodiment.

[0015] Figure 5 This is an explanatory diagram illustrating the supply section of the first embodiment.

[0016] Figure 6 This is an explanatory diagram illustrating the controller of the first embodiment.

[0017] Figure 7 This is an explanatory diagram illustrating the action information table of the first embodiment.

[0018] Figure 8 This is an explanatory diagram illustrating the state level table of the first embodiment.

[0019] Figure 9 This is an explanatory diagram illustrating the processing flow of the substrate according to the first embodiment.

[0020] Figure 10 This is an explanatory diagram illustrating the state level table of the second embodiment.

[0021] The reference numerals in the attached figures are explained as follows:

[0022] 100 Substrate Processing Apparatus

[0023] 201 Processing Room

[0024] 211 Substrate mounting surface

[0025] 300 Gas Supply Department

[0026] 400 controller

[0027] 410 CPU

[0028] 412 Judgment Department

[0029] 413 Selection Department

[0030] 414 Main Control Unit Detailed Implementation

[0031] (First Implementation)

[0032] The first embodiment of this disclosure will now be described.

[0033] First, use Figures 1-5This describes the substrate processing apparatus 100 in this embodiment. Figure 1 In this context, the bottom of the diagram is represented as the front, and the top of the diagram is represented as the back.

[0034] (Substrate processing apparatus)

[0035] like Figure 1 As shown, the substrate processing apparatus 100 consists of an IO unit (loading port) 110, an atmospheric transport unit 120, a vacuum lock unit 130, a vacuum transport unit 140, and a substrate processing unit 150.

[0036] (Atmospheric transport room, I / O station)

[0037] An I / O platform (loading port) 110 is provided in front of the substrate processing apparatus 100. Multiple boxes 111 are mounted on the I / O platform 110. The boxes 111 serve as carriers for transporting substrates such as silicon (Si) substrates, and are configured such that multiple unprocessed product substrates (PS) with formed circuits or processed product substrates (PS) and dummy substrates (DS) are each stored horizontally within the boxes 111. Furthermore, in the following description, when only substrate S is represented, sometimes one or both of the product substrates (PS) and dummy substrates (DS) may be included.

[0038] The box 111 has a cover, which is opened and closed by a box opener (not shown). The box opener opens and closes the cover of the box 111 placed on the IO table 110, opening / closing the substrate inlet / outlet 128, thereby enabling the substrate S to be moved in and out relative to the box 111. The box 111 is supplied and discharged relative to the IO table 110 by an AMHS (Automated Material Handling Systems, not shown).

[0039] The I / O stage 110 is adjacent to the atmospheric transport unit 120. The atmospheric transport unit 120 is connected to the vacuum lock unit 130 (described later) on a different surface from the I / O stage 110.

[0040] An atmospheric transport robot 122 with a movable base plate S is provided inside the atmospheric transport section 120. The atmospheric transport robot 122 is configured to move up and down via a lifting mechanism provided in the atmospheric transport section 120, and is configured to move back and forth in the left and right directions via a linear actuation mechanism.

[0041] A substrate loading / unloading outlet 129 is provided behind the atmospheric transport section 120 for moving the substrate S into and out of the vacuum lock section 130. The substrate loading / unloading outlet 129 is opened / closed by a gate valve to allow the substrate S to enter and exit.

[0042] (Vacuum Lock)

[0043] The vacuum lock section 130 has a standby section 135 that supports the substrate S. The standby section 135 supports the substrate S that is transported from the atmospheric transport section or the substrate S that is transported from the vacuum transport section 140.

[0044] A substrate loading / unloading outlet 131 is provided between the vacuum lock section 130 and the vacuum transport section 140. A gate valve (not shown) is provided near the substrate loading / unloading outlet 131 in a manner that can isolate the vacuum lock section 130 and the vacuum transport section 140.

[0045] (Vacuum Transport Department)

[0046] A vacuum transport robot 142 for transporting substrate S is provided in the vacuum transport section 140. The vacuum transport robot 142 transports substrate S between the vacuum lock section 130 and the substrate processing section 150. The vacuum transport robot 142 has at least a finger section 143, an arm section 144, and a base 145. In addition, the vacuum transport robot 142 has a robot control section 146 for controlling the rotation or extension of the arm section 144, etc.

[0047] The substrate S is supported on the finger portion 143, and the arm portion 144 is rotated, extended, or moved between the vacuum lock portion 130 and the substrate processing portion 150 under the control of the robotic arm control portion 146.

[0048] Similarly, a substrate loading / unloading outlet 141 is provided between the vacuum transport section 140 and the substrate processing section 150. A gate valve (not shown) is provided near the substrate loading / unloading outlet 141 in a manner that can isolate the vacuum transport section 140 and the substrate processing section 150.

[0049] (Substrate Processing Department)

[0050] Next, the specific structure of the substrate processing unit 150 will be explained.

[0051] like Figure 1 , 2 As shown, the substrate processing unit 150 includes a processing container 202. The processing container 202 is also referred to as a processing module. The processing container 202 is, for example, configured as a flat, polygonal, sealed container. Furthermore, the processing container 202 is made of a metal material such as aluminum (Al) or stainless steel (SUS). A processing chamber 201 for processing the substrate S is formed within the processing container 202. The processing chamber 201 is composed of a spray head 230, a base 210, etc., as described later.

[0052] A substrate loading / unloading outlet 141 adjacent to the gate valve 208 is provided on the side of the processing container 202, and the substrate S moves between the vacuum transport units 140 via the substrate loading / unloading outlet 141.

[0053] A base 210 for heating the substrate S is disposed in the processing chamber 201. Multiple bases 210 are arranged radially along the processing container 202, centered on axis 221 (described later). The base 210 is also referred to as a substrate support. Figure 1 This describes the configuration of base 210. Furthermore, the longitudinal section view in B-B' is equivalent to... Figure 2 .

[0054] At least four base stations 210 are provided. Specifically, base stations 210a, 210b, 210c, and 210d are arranged clockwise from the position opposite to the substrate loading / unloading outlet 141.

[0055] Each of the bases 210 has a substrate mounting surface 211 (substrate mounting surface 211a to substrate mounting surface 211d) for mounting the substrate S, and a recess 215 (recess 215a to recess 215d) including the substrate mounting surface 211. That is, multiple substrate mounting surfaces 211 are arranged radially in the processing container 202.

[0056] The base 210 is part of the convex structure constituting the recess 215 and has a surface 214 (surface 214a to surface 214d) opposite to the gas supply section. Since the substrate S is not mounted on the surface 214, it can be expressed as a non-substrate mounting surface in contrast to the substrate mounting surface.

[0057] The base 210 also has heaters 213 (213a to 213d) that serve as a heating source. On the base 210, through holes are provided at positions corresponding to the lifting pins 207 for the lifting pins 207 to pass through.

[0058] The base 210 is supported by shafts 217 (shafts 217a to 217b). Shafts 217 extend through the bottom 204 of the processing container 202.

[0059] The diameter of the substrate mounting surface 211 is configured to be slightly larger than the diameter of the substrate S. Therefore, when the substrate S is mounted, there is a gap that does not support the substrate S.

[0060] A lifting pin 207 is provided through the bottom 204. The lifting pin 207 is positioned to pass through the through hole provided in the base 210. The front end of the lifting pin 207 supports the substrate S when the substrate is moved in / out.

[0061] A lifting pin support portion 212 (212a to 212d) is provided at the lower end of the lifting pin 207. A substrate lifting portion 216 (216a to 216d) is provided in each lifting pin support portion 212. The substrate lifting portion 216 causes the lifting pin 207 to move up and down. The lifting pin support portion 212 and the substrate lifting portion 216 are provided correspondingly to their respective bases 210a to 210d.

[0062] Spray heads 230 (230a to 230d) serving as gas dispersion mechanisms are respectively provided on the cover 203 of the processing container 202 and opposite to their respective substrate mounting surfaces 211. Viewed from above, they appear as... Figure 4 The configuration includes multiple spray heads 230.

[0063] like Figure 4 As shown, each spray head 230 is provided with a gas inlet hole 231. Specifically, spray head 230a has a gas inlet hole 231a, spray head 230b has a gas inlet hole 231b, spray head 230c has a gas inlet hole 231c, and spray head 230d has a gas inlet hole 231d. The gas inlet holes 231a, 231b, 231c, and 231d are connected to the common gas supply pipe 311 described later. Furthermore, Figure 4 The longitudinal section diagram of line A-A' in the middle and Figure 2 quite.

[0064] The space between each spray head 230 and the substrate S is referred to as the processing space 209. Furthermore, the structure constituting the processing space 209 is referred to as the processing chamber 201. In this embodiment, the structure constituting the processing space 209a, and having at least the spray head 230a and the base 210a, is referred to as the processing chamber 201a. The structure constituting the processing space 209b, and having at least the spray head 230b and the base 210b, is referred to as the processing chamber 201b. The structure constituting the processing space 209c, and having at least the spray head 230c and the base 210c, is referred to as the processing chamber 201c. The structure constituting the processing space 209d, and having at least the spray head 230d and the base 210d, is referred to as the processing chamber 201d.

[0065] Furthermore, this description indicates that the processing chamber 201 has at least a spray head 230 and a base 210, but it is only necessary for the structure to form the processing space 209 of the processing substrate S. Of course, depending on the device structure, it is not limited to the structure of the spray head 230, etc. The same applies to other processing chambers.

[0066] like Figure 1 As shown, bases 210 are arranged around shaft 221. A rotating arm 222 is provided on shaft 221. The rotating arm 222 has multiple arms 223 and a fixing part 224 that fixes each arm 223 to shaft 221. The fixing part 224 is fixed to shaft 221. The arms 223 are arranged radially around the fixing part 224.

[0067] The shaft 221 is configured to penetrate the bottom 204 of the processing container 202, and a lifting and rotating part 225 is provided on the outside of the processing container 202, on the side opposite to the rotating arm 222. The lifting and rotating part 225 causes the shaft 221 to be raised, lowered, or rotated. The lifting and rotating part 225 enables independent raising and lowering of the shaft 221 from each base 210. The rotation direction, for example, is along... Figure 1 The direction of the arrow in the image rotates.

[0068] Multiple claws 226 protruding in the rotation direction of the rotating arm 222 are provided at the front end of the arm 223. The claws 226 form the back side of the support substrate S.

[0069] When the rotating arm 222 picks up the substrate S from the base 210, from Figure 2 The state of the lifting pin 207 causes it to rise, and thus the shaft 221 rises. At this time, as... Figure 3 As shown, the rotating arm 222 is positioned higher than the substrate mounting surface 211. Furthermore, on the substrate mounting surface 211, the lifting pin 207 supports the product substrate PS at a position higher than the rotating arm 222. The claw 226 is positioned below the substrate S by rotating the rotating arm 222. Subsequently, the substrate S is moved onto the claw 226 by lowering the lifting pin 207.

[0070] When moving the substrate S from the rotary arm 222 to the base 210, the lifting pin 207 and the rotary arm 222 are controlled in reverse order. Furthermore, during the substrate processing described later, the rotary arm 222... Figure 2 As shown, it is in standby mode below the processing container 202.

[0071] The shaft 221, arm 223, and fixing part 224 are collectively referred to as the substrate rotation part 220. The substrate rotation part 220 may also include a rotation lifting part 225. The substrate rotation part 220 is also called a substrate transport part. Alternatively, a combination of one or all of the substrate lifting part and the rotating plate lifting part may be collectively referred to as a lifting part.

[0072] (Gas exhaust system)

[0073] A gas exhaust system 260 is described, which exhausts ambient gas from the processing container 202. The gas exhaust systems 260 are arranged in a manner corresponding to their respective processing spaces 209 (209a to 209d). For example, processing space 209a corresponds to gas exhaust system 260a, processing space 209b corresponds to gas exhaust system 260b, processing space 209c corresponds to gas exhaust system 260c, and processing space 209d corresponds to gas exhaust system 260d.

[0074] The gas discharge system 260 has a discharge pipe 262 (262a-262d) communicating with discharge ports 261 (261a-261d), and also has an APC (Auto Pressure Controller) 266 (266a-266d) provided in the discharge pipe 262. The APC 266 has a valve core (not shown) capable of adjusting the opening degree, and adjusts the conductivity of the discharge pipe 262 according to the instruction from the controller 400. In addition, a valve 267 (267a-267d) is provided in the discharge pipe 262 upstream of the APC 266.

[0075] The discharge pipe 262, valve 267, and APC 266 are collectively referred to as the gas discharge system 260.

[0076] The discharge pipe 262, pressure motor 268, valve 267, and APC 266 are collectively referred to as the discharge section. A DP (Dry Pump) 269 is provided downstream of the discharge pipe 262. The DP 269 discharges the ambient gas from the treatment chamber 201 via the discharge pipe 262. In this embodiment, a DP 269 is provided for each gas discharge system 260, but it is not limited to this and can be shared by all gas discharge systems.

[0077] Figure 2 The α shown signifies the electrical connection of each component and sensor 270. Specifically, each heater 213 or gas exhaust system 260 is electrically connected to sensor 270.

[0078] Sensor 270 detects the status of each component. For example, it detects the operating time or number of cycles of heater 213, and the operating time or number of cycles of valve 267 or APC 266. Furthermore, for ease of explanation, details related to... Figure 3 The record relates to sensor 270.

[0079] (Gas Supply Department)

[0080] Next, use Figure 5 Gas supply unit 300 will be described. Here, the gas supply unit 300, which is connected to the gas inlet hole 231 (231a to 231d), will be described.

[0081] Each gas inlet 231 is configured to communicate with the distribution pipes 305 (305a to 305d). Each distribution pipe 305 is connected to the common gas supply pipe 301 via the manifold 306.

[0082] Spray heads 320 (320a-320d) are connected to distribution pipes 305 (305a-305d). That is, each distribution pipe 305 is configured to correspond to the mounting surface 211 of each substrate. Valves 302 (302a-302d) and mass flow controllers 303 (303a-303d) are provided on each distribution pipe 305 (305a-305d). Flow meters 307 (307a-307d) are connected to each mass flow controller 303 (303a-303d). The gas supply to each processing chamber 201 is determined using the flow rate and measurement time measured by the flow meters 307.

[0083] The gas supply from the distribution pipe 305 is measured by the flow meter 307. The gas supply to each process 201 is regulated using valves 302 and mass flow controllers (MFC) 303. A first gas supply pipe 311 and a second gas supply pipe 321 are connected to the common gas supply pipe 301.

[0084] The common gas supply system 330 mainly consists of a distribution pipe 305, a manifold 306, a valve 302, and a mass flow controller 203. The common gas supply system may also include a flow meter 307.

[0085] The first gas supply pipe 311 is provided with a first gas source 312, a mass flow controller 313 as a flow controller (flow control unit), and a valve 314 as an on / off valve in sequence from the upstream direction.

[0086] The first gas source 312 is a first gas source containing a first element (also called a "gas containing the first element"). The gas containing the first element is a raw material gas, i.e., a process gas. Here, the first element is silicon (Si). That is, the gas containing the first element is a silicon-containing gas. Specifically, as the silicon-containing gas, dichlorosilane (also called SiH2Cl2.DCS) or hexachlorosilane (also called Si2Cl6.HCDS) gas is used.

[0087] The first gas supply system 310 (also known as the silicon-containing gas supply system) is mainly composed of a first gas supply pipe 311, a mass flow controller 313, and a valve 314.

[0088] The second gas supply pipe 321 is provided with a second gas source 322, a mass flow controller 323, and a valve 324 as an on / off valve in sequence from the upstream direction.

[0089] The second gas source 322 is a second gas source containing a second element (hereinafter also referred to as "gas containing a second element"). The gas containing a second element is a type of process gas. Alternatively, the gas containing a second element can also be considered a reactant gas.

[0090] Here, the gas containing the second element contains a second element different from the first element. The second element is, for example, oxygen (O). In this embodiment, the gas containing the second element is, for example, an oxygen-containing gas. Specifically, ozone (O3) gas is used as the oxygen-containing gas.

[0091] The second gas supply system 320 (also known as the reaction gas supply system) is mainly composed of the second gas supply pipe 321, the mass flow controller 323, and the valve 324.

[0092] Furthermore, one or a combination of the common gas supply system 330, the first gas supply system 310, the second gas supply system 330, is referred to as the gas supply unit 300.

[0093] Figure 5 The α shown signifies the electrical connection of each component and sensor 270. Specifically, the valves or mass flow controllers of the common gas supply system 330, the first gas supply system 310, and the second gas supply system 330 are electrically connected together. Furthermore, the flow meter 307 can be electrically connected to the sensor 270.

[0094] Sensor 270 detects the status of each component. For example, it detects the operating time or number of cycles of the mass flow controller, and the operating time or number of cycles of the valve. When a flow meter 307 is connected, it detects the flow rate of each distribution pipe 303.

[0095] The flow meter 307 and sensor 270 are collectively referred to as the detection unit. Alternatively, either the flow meter 307 or the sensor 270 can be referred to as the detection unit.

[0096] (Controller)

[0097] Next, the controller 400 will be described. The controller 400 is also called a control unit. The substrate processing apparatus 100 has a controller 400 that controls the operation of various parts of the substrate processing apparatus 100. The controller 400 is as follows... Figure 6 As shown, it includes at least an arithmetic unit (CPU) 410, a temporary storage unit (RAM) 420, a storage unit 430, and an I / O port 440. The controller 400 is connected to each component of the board processing apparatus 100 via the I / O port 440.

[0098] The arithmetic unit 410 includes a transceiver instruction unit 411, a judgment unit 412, a selection unit 413, and a main control unit 414. The transceiver instruction unit 411 controls the transmission and reception of signals within the substrate processing apparatus 100 and between the substrate processing apparatus 100 and surrounding devices. The judgment unit 412 determines the state of the base station 210. The selection unit 413 selects the base station 210 as the destination for transporting the substrate S.

[0099] The main control unit 414 retrieves programs or processes from the storage unit 430 according to instructions from the host device 460 or the user, and controls the actions of each component, such as the robot control unit 146, based on their contents. The storage unit 430 includes a process information storage unit 431 for storing process information, an action information storage unit 432 for storing action information, and a status level storage unit 434 for storing status information. The action information storage unit 432 and the status level storage unit 434 will be described later.

[0100] The controller 400 can be configured as a dedicated computer or a general-purpose computer. For example, by preparing an external storage device (e.g., a magnetic disk such as a magnetic tape, floppy disk, or hard disk; an optical disk such as a CD or DVD; an optical disk such as an MO; a USB flash drive; or a memory card) 452 storing the aforementioned program, and installing the program on a general-purpose computer using the external storage device 452, the controller 400 of this embodiment can be configured. Furthermore, the means for supplying the program to the computer are not limited to supplying it via the external storage device 452. For example, communication means such as a network or dedicated line can be used to receive information from the host device 460 via the receiving unit 454, or the program can be supplied without using the external storage device 452. Additionally, an input / output device 451 such as a keyboard or touch panel can be used to instruct the controller 400.

[0101] The storage unit 430 or the external storage device 452 is configured as a computer-readable recording medium. Hereinafter, these will be collectively referred to as recording media only. Furthermore, when the term "recording medium" is used in this specification, it may include only the storage unit 430, only the external storage device 452, or both.

[0102] Next, use Figure 7 Description of motion information storage unit 432. Motion information storage unit 432 has... Figure 7 The operation information table 433 is shown. Operation information table 433 is a table that establishes a relationship between the operation of each base station 210 and the substrate processing apparatus 100. (A) records the processing time information of each base station 210 and the gas supply amount per unit time in each distribution pipe 305. (B) records the operating time of components (e.g., heater 213) in each base station 210.

[0103] The Processing Time (PT) information in (A) refers to the cumulative time for supplying the processing gas. The Processing Time (PT) information is reset after cleaning or replacement of the recess 215 or surface 214, such as the base 210, to a clean state.

[0104] The gas supply information displays the amount of gas supplied per unit time. The gas supply is detected by the time controlled by the main control unit 414 or by the gas supply detected by the flow detector 307, and this data is entered into the table.

[0105] (B) refers to the operation information of the components corresponding to each base station 210. This also refers to the operation information of the components corresponding to each substrate mounting surface 211. Operation information includes, for example, the operation time OT. Components include heater 213, heater control system components, gas supply system components, and gas exhaust system components. When using plasma, a plasma control system component may be included. The operation time is reset when maintenance is performed, such as replacing any components.

[0106] As a heater control system component, it includes a temperature gauge for measuring the temperature of heater 213 or a power supply line for powering the heater. As a plasma control system component, it includes electrodes or power supply lines. As a gas supply system component, it includes... Figure 5 The valves shown are 302 or MFC303, etc. As components of the gas exhaust system, there are APC266, valve 267, etc.

[0107] Information about these components can be calculated from data detected by sensor 270, or the controller 400 can measure the operating time of each component and record the data.

[0108] Next, use Figure 8 Description of status level storage section 434.

[0109] Status level storage unit 434 has Figure 8 The state level table 435 is shown. State level table 435 is a table that establishes the association between the state of base station 210 and its state level. The state of base station 210 shows the state of each base station 210 calculated from the operation information table 433, and its state level. The information of base station 210 refers to, for example, information about the membrane attached to base station 210 or operational information of components.

[0110] The information about the film is, for example, the film thickness Th of the film formed on the upper surface 214. If the film thickness is too thick, the film becomes easy to peel off, which may have an adverse effect on the substrate processing. Therefore, film thickness management is performed. The film thickness information is calculated for each substrate 210 based on the processing time information and gas supply information in the operation information table 433(A).

[0111] Furthermore, regarding the condition of components, for example, consider the operating time of heater 213. Since the performance of heater 213 deteriorates due to operating time, there is concern that the desired processing may not be possible.

[0112] The state of each base station 210 is, for example, information calculated from the information in the operation information table 433. In this embodiment, the film thickness is calculated from the operation information table 433(A). The film thickness information is obtained by using the product of the processing time and the gas supply amount recorded in the operation information table 433.

[0113] In addition, information from motion information table 433(B) is extracted based on the component's operating time.

[0114] State level table 435 has levels corresponding to the states. Figure 8 In this context, represents the best state (Level 1) and the worst state (Level 3). In other words, it can also be expressed as Level 1 being the highest level and Level 3 being the lowest level.

[0115] In the state level table 435(A), level 1 shows the state where the film thickness Th is less than the threshold A1, which is the thinnest state. On the other hand, level 3 shows the state where the film thickness Th is greater than the threshold B1, which is the thickest state. Furthermore, A1 < B1. A thinner film thickness is a better state, and a thicker film thickness is a worse state.

[0116] In the status level table 435(B), it is shown that in level 1, the operating time OT is less than the threshold A2, which is the shortest operating time. On the other hand, it is shown that in level 3, the operating time OT is greater than the threshold B2, which is the longest operating time. In addition, A2 < B2. Since the longer the operating time, the more likely the components are to deteriorate, the shorter the operating time, the better the state, and the longer the operating time, the worse the state.

[0117] The action that reflects the information in the action information table 433 to the state level table 435 is performed by the judgment unit 412.

[0118] Here, the example given is the operating time of a component, but it is not limited to this; it can also refer to the performance of the component. For example, if it is heater 213, it can be the performance compared to the performance at the start of operation. The performance compared to the performance at the start of operation means, for example, if the performance at the start of operation is set to 100%, the performance is 80%, 60%, etc.

[0119] (Substrate processing method)

[0120] Next, use Figure 9 The substrate processing method will be explained. In this embodiment, the process of processing the substrate is described by supplying processing gas to the product substrate PS. For example, the process of supplying Si-containing gas and oxygen-containing gas to each substrate to form a SiO film will be described as an example.

[0121] In this embodiment, an example of processing four product substrates (PS) within the processing container 202 is described.

[0122] First, the reasons for the different states of each substrate mounting surface 211 will be explained. The states vary depending on the substrate mounting surface, for example, the deviation in the processing accuracy of the recess 215, the performance deviation of the heating components, gas supply system components, gas exhaust system components, and the deviation in the time until deterioration.

[0123] Of course, each component has the performance to maintain the desired processing quality relative to the product substrate PS. However, due to deviations in processing accuracy, component performance, and component degradation time, repeated processing can lead to significant deviations, such as thinning of the film on high-performance substrates and thickening of the film on low-performance substrates.

[0124] If the film thickness increases, there is a concern that it may lead to film peeling, which would adversely affect the quality of the product substrate PS. In the processing of the product substrate PS, to minimize the impact of particles formed due to film peeling, it is preferable to use a high-performance substrate 210 for processing.

[0125] Therefore, in this embodiment, even if performance deviations occur in components around the mounting surfaces of each substrate, high-quality processing is performed, and a high-performance base 210 is selected. A detailed description will follow.

[0126] (S102)

[0127] This describes the substrate loading process S102, in which the product substrate PS is loaded into the processing container 202.

[0128] In the substrate processing apparatus 100, the rotary arm 222 is raised, and the claw 226 is positioned above the base 210a and rotated. The vacuum handling robot 142 moves the arm 144 to transfer the product substrate PS onto the claw 226.

[0129] After transferring the product substrate PS, the rotary arm 222 is rotated, and the product substrate PS is transferred to the claw 226, which is not supporting the product substrate PS, using the same action. Then, after each claw 226 is positioned on the base 210, the lifting pin 217 is raised, and the substrate is transferred from the claw 226 to the lifting pin 217. After transferring the product substrate PS, the rotary arm 222 is lowered between the base 210, and the lifting pin 217 is lowered, transferring the product substrate PS to each substrate mounting surface 211.

[0130] After the product substrate PS is placed on the substrate placement surface 211, the gate valve 208 is closed to seal the processing container 202. This moves the product substrate PS to the processing space 209.

[0131] When the product substrate PS is placed on each substrate mounting surface 211, power is supplied to each heater 213 to control the surface temperature of the product substrate PS to a predetermined temperature. The temperature of the product substrate PS is, for example, above room temperature and below 800°C, preferably above room temperature and below 700°C. At this time, the controller 400 extracts a control value based on the temperature information detected by the sensor 270 and adjusts the temperature of the heater 213 by controlling the degree of power supply of the heater 213.

[0132] (S104)

[0133] Next, the gas supply process S104 will be described.

[0134] After maintaining the product substrate PS, which is moved to each processing space 209, at a predetermined temperature, the supply unit 300 is controlled to simultaneously supply silicon-containing gas and oxygen-containing gas to the processing space 209a. At the same time, gas is discharged from the discharge system 260.

[0135] In the processing space 209, silicon-containing gas reacts with oxygen-containing gas to form a silicon oxide film as an insulating film 102 on the product substrate PS. At the same time, a film is also formed on the structure around the substrate mounting surface 211, such as on the upper surface 214.

[0136] Furthermore, this paper describes the simultaneous supply of Si-containing gas and oxygen-containing gas, but it is not limited to this. Si-containing gas and oxygen-containing gas can also be supplied alternately and independently, or they can be supplied in a manner that allows for a partial overlap of alternation.

[0137] The gas supply will be stopped after the specified time has elapsed.

[0138] During the gas supply process S104, the main control unit 414 records the information in the action information table 433(A).

[0139] (S106)

[0140] Next, the substrate removal process S106 will be described. After the gas supply process S104, the processed product substrate PS is removed from the processing container 202. During removal, the product substrate PS is removed in the reverse order of the substrate loading process S102.

[0141] (S108)

[0142] Next, the judgment S108 will be explained.

[0143] Here, it is determined whether a specified number of product substrates (PS) have been processed. The specified number of substrates refers to, for example, the batch number. If the specified number of substrates has been processed, it is determined to be yes and the processing ends; if the specified number of substrates has not been processed, it is determined to be no and the process proceeds to S110.

[0144] The main control unit 414 records the status of each base station 210 in the action information table 433(B) until it determines that the specified number of sheets have been processed.

[0145] (S110)

[0146] Next, the status level determination process S110 will be explained.

[0147] Here, the determination unit 412 determines the state of the base station 210. The determination unit 412 determines the state of each base station 210 based on the information in the motion information table 433. Specifically, it determines the state level based on the content of motion information table (A) or (B).

[0148] For example, if the information in the action information table 433(A) is used to determine the state level, the film thickness Th on each stage 210 is calculated based on the processing time and gas supply. Then, it is compared with the contents of the state level table 435(A).

[0149] For example, if the film thickness Th is lower than A1, the state level is determined to be level 1. If the film thickness Th is higher than A1 but lower than B1, it is determined to be level 2. If the film thickness Th is higher than B1, it is determined to be level 3.

[0150] Level 1 indicates that the film thickness formed on the substrate 210 does not affect the substrate processing, for example, it does not affect the film thickness formed on the product substrate PS. Level 2 indicates that although it does not affect the substrate processing, if the film were slightly thicker, it would affect the film quality. Level 3 indicates that it has an adverse effect on the substrate processing.

[0151] In addition, based on the information in the action information table 433(B), the component operating time (OT) of each base station 210 is extracted to determine the status level.

[0152] For example, if the component's operating time OT is lower than time A2, the status level is determined to be level 1. If the component's operating time OT is higher than A2 but lower than B2, it is determined to be level 2. If the component's operating time OT is higher than B2, it is determined to be level 3.

[0153] Level 1 is the time during which the operating time of the components associated with the base 210 does not affect the substrate processing. For example, this is the time during which the heater 213 does not deteriorate. Level 2 is the time during which, although it does not affect the substrate processing, the components may fail to perform as expected if the operating time becomes longer, thus affecting the substrate processing. Level 3 is the time during which the substrate processing will be adversely affected and deterioration will occur.

[0154] In the presence of a level 3 base station 210, the main control unit 414 notifies the information via the input / output device 451. The notification content is a message urging the replacement of deteriorated components, cleaning of the base station, and replacement of the base station.

[0155] (S112)

[0156] Next, the substrate support selection process S112 will be explained.

[0157] Here, the selection unit 413 selects the base station 210 as the destination for the movement of the product substrate PS based on the information of each base station 210 and the status level table 435.

[0158] The selection unit 413 is selected as the destination for moving the product substrate PS to be processed thereafter, and the substrate 210 with good condition, i.e., the substrate 210 with a high condition level, is selected. Based on film thickness, the substrate 210 with good condition is selected by referring to the information in the condition level table (A). Based on component operating time, the substrate 210 with good condition is selected by referring to the information in the condition level table (B).

[0159] Specifically, the selection unit 413 preferentially selects the level 1 base station 210. Regarding the level 2 base station 210, if the level 1 base station 210 cannot be selected, the level 2 base station is selected. The level 3 base station 210, which is considered to have an adverse effect on substrate processing, is not selected. That is, the movement of the substrate S towards the substrate mounting surface 211 of the level 3 base station 210 is stopped.

[0160] After the selection unit 413 selects the destination of the product substrate PS, the main control unit 414 places the product substrate PS on the substrate placement surface 211 of the base 210, which is the selected target, in the substrate loading process S102.

[0161] Therefore, the product substrate PS is preferentially placed on the substrate mounting surface 211 of the high-performance base 210.

[0162] (Second Implementation)

[0163] Next, the second embodiment will be described. In the second embodiment, the configuration of the substrate processing apparatus 100 is the same as in the first embodiment, but the contents of the state level table 435 are different. Regarding the substrate processing method, Figure 9 The substrate loading process S102 to the condition level determination process S110 are the same, but the substrate support selection process S112 is different. Here, we will focus on the substrate support selection process S112.

[0164] (S112)

[0165] The substrate support selection process S112 in this embodiment will be explained. First, the method of using the dummy substrate DS will be explained.

[0166] In the processing of the substrate processing apparatus 100, dummy substrates DS are sometimes used and utilized. For example, the number of product substrates PS processed is not a multiple of the number of base stations 210. In the case of processing 110 product substrates PS and having 4 base stations 210, 4 product substrates PS are processed 27 times together in the processing container 202. In this case, 2 substrates remain at the end.

[0167] The remaining two substrates are placed on the substrate 210 and processed. However, in this case, gas is also supplied to the substrate mounting surface 211, which is not currently holding a substrate. As a result, a film forms on the substrate mounting surface 211. In this state, considering the processing of the next batch of product substrates PS, the film formed on the substrate mounting surface 211 may peel off when the product substrate PS is placed on the substrate. Sometimes, the peeled film adheres to the product substrate PS, affecting the performance of the product substrate PS.

[0168] Therefore, the dummy substrate DS is placed on the substrate mounting surface 211 where the product substrate PS is not mounted. As a result, gas does not reach the substrate mounting surface 211, and thus no film is formed on the substrate mounting surface 211.

[0169] In this embodiment, a method for selecting the moving destination of the product substrate PS and the dummy substrate DS is described.

[0170] use Figure 10 The state level table 435' in this embodiment is explained. The state level table 435' is a replacement for the state level table 435 in the first embodiment.

[0171] A level corresponding to the state is set for state level table 435'. Figure 1 The diagram shows that Level 1 (Level 1-1, Level 1-2) is a good state compared to other levels, while Level 3 is the worst state.

[0172] Level 1-1 is a better state than Level 1-2. For example, as shown in State Level Table 435'(A), Level 1-1 is a state where the film thickness Th is less than the threshold A3, representing the thinnest film. Level 1-2 is a state where the film thickness Th is above the threshold A3 and less than the threshold B3. Level 2 is the same as Level 2 in State Level Table 435, representing a state where it does not affect substrate processing, but a slight increase in film thickness would have an impact. In the case of Level 3, a state where the film thickness Th is above the threshold C3 is shown, representing the thickest film.

[0173] Additionally, as shown in State Level Table 435'(B), in Level 1-1, the operating time OT is less than the threshold A4, representing the shortest operating time. In Level 1-2, the operating time OT is above the threshold A4 and less than the threshold B4. Level 2 is the same as Level 2 in State Level Table 435, representing a state where it does not affect the substrate processing, but would have an impact if the film becomes slightly thicker. In the case of Level 3, the operating time OT is above the threshold C4, representing the longest operating time.

[0174] The selection unit 413 determines the state of each base station 210 according to the state level table 435. In this embodiment, the product substrate PS is moved to a base station 210 with a higher state level (e.g., a base station of level 1). Furthermore, the dummy substrate DS is moved to the remaining base stations 210. For example, the dummy substrate DS is moved to a base station 21 with a lower state level than the base station 210 on which the product substrate PS is placed.

[0175] For example, when moving two product substrates PS and two dummy substrates DS, and when there are bases 210 of level 1 and level 2, the product substrate PS is moved to the base of level 1.

[0176] In addition, when moving one product substrate PS and three dummy substrates DS, and when there are bases 210 of level 1 and level 2, the product substrate PS is moved to the highest level base among the bases of level 1, namely the base of level 1-1.

[0177] This section describes an example where the product substrate PS is preferentially moved to the high-state stage 210. Since the product substrate PS requires increased production yield, it is preferable to move it to a stage where the desired processing can be performed. On the other hand, in the case of the dummy substrate DS, unlike the product substrate PS, no semiconductor devices are manufactured, and it is not a problem even if particles adhere to the dummy substrate DS. Therefore, it is acceptable to move it to a stage of state 2. In this case, it is preferable to move the product substrate PS to the high-state stage 210.

[0178] Next, a specific example will be explained. When the information is film thickness Th, the selection unit 413 refers to the information in the operation information table 433 and the status level table 435'(A) and selects the base station 210 with a higher status level. For example, the base station 210 with a status level of 1-1 is selected. The main control unit 414 moves the product substrate PS to the selected base station 210.

[0179] Furthermore, when the information is the component's operating time OT, the selection unit 413 refers to the information in the operation information table 433 and the status level table 435'(B) and selects the base station 210 with a higher status level. For example, the base station 210 with a status level of 1-1 is selected. The main control unit 414 moves the product board PS to the selected base station 210.

[0180] Therefore, the product substrate PS is preferentially placed on the highest performance base 210.

[0181] (Third implementation method)

[0182] Next, the third implementation method will be described.

[0183] In the first embodiment, the processing time or component operation time of the action information table is reset when maintaining each base station 210 or component. However, in this embodiment, the reset is not performed. Instead, these accumulated times are measured to find the processing tendency of each base station 210.

[0184] As described above, there are deviations in the substrate processing of each substrate 210, but if the processing is repeated, the deviations will become more significant, thereby making it possible to identify the substrate processing tendencies in each substrate 210. For example, if the processing of substrate 210c is of higher quality than that of substrate 210d, then substrate 210c tends to have a thinner film thickness compared to substrate 210d.

[0185] These tendencies arise because there are deviations between the base 210 and the outlet 261 or spray head 230 in terms of their positional relationship, or the construction of the recess 215 of the base 210. Although it is desirable to ideally eliminate these deviations, it is difficult to do so in reality due to issues such as machining accuracy or component precision.

[0186] Therefore, in this embodiment, the tendency of each base station 210 to process the substrate is clarified by using the cumulative time recording action information table 433. Similar to Embodiment 1, the selection unit 413 also selects the base station 210 of the substrate S's moving destination based on the information in the action information table 433 and the status level table 435.

[0187] Therefore, it is possible to prioritize the selection of substrate 210 with good basic performance, thereby ensuring that a substrate capable of high-quality substrate processing is always selected.

[0188] Furthermore, it has been explained that in this embodiment, cumulative time is used to identify tendencies, but this is not a limitation. This embodiment can be implemented in conjunction with the management of post-maintenance processing time or component operating time as in the first embodiment.

[0189] (Other implementation methods)

[0190] Other implementation methods are described below.

[0191] In this embodiment, the selection unit 413 refers to the state level table 435 (or state level table 435'), but is not limited to this; it may select only the information from the action information table 433. For example, if the film thickness is almost directly proportional to the processing time, it may select the base station 210 with a shorter processing time by using only the processing time in the action information table 433(A).

[0192] Alternatively, if the component operating time is used for judgment, the moving destination of the product substrate PS in the action information table 433(B) can be determined using only the component operating time information, and the base station 210 with a shorter component operating time can be selected.

[0193] In this embodiment, a substrate processing method is described using silicon-containing gas and oxygen-containing gas as examples, but it is not limited to this. For example, a metal-containing gas may be used instead of silicon-containing gas and nitrogen-containing gas, or silicon.

[0194] In addition, if it is a device for generating plasma for each base, the components around the substrate mounting surface can be, for example, electrodes or wiring for plasma generation.

Claims

1. A method of manufacturing a semiconductor device, characterized by, Comprising: a process of supplying a gas to a processing container via a distribution pipe in a state where a substrate is placed on a substrate placement surface provided in a plurality of the processing container; a process of detecting, for each component corresponding to the substrate placement surface, information on a component corresponding to the substrate placement surface and deteriorated due to substrate processing, and operating information of the component or information on performance of the component compared with performance at the start of operation of the component, for each substrate placement surface; a process of judging a state level of each of the substrate placement surfaces based on the detected information; and a process of selecting the substrate placement surface as a movement destination of the substrate to be next moved into the processing container according to the state level.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the state level includes a film thickness of a film formed on a non-substrate placement surface in a substrate support portion having the substrate placement surface.

3. The method for manufacturing a semiconductor device according to claim 2, wherein the film thickness is calculated from a supply amount and a processing time of the gas supplied to the non-substrate placement surface.

4. The method for manufacturing a semiconductor device according to claim 2, wherein in a case where it is judged that the film thickness is equal to or more than a threshold value, notification is made to clean the non-substrate placement surface.

5. The method for manufacturing a semiconductor device according to claim 2, wherein after it is judged that the film thickness is equal to or more than a threshold value, a message is notified to promote replacement of the component.

6. The method for manufacturing a semiconductor device according to claim 2, wherein the substrate placement surface is provided in a substrate support portion, after it is judged that the film thickness is equal to or more than a threshold value, a message is notified to promote replacement of the substrate placement portion.

7. The method for manufacturing a semiconductor device according to claim 1, wherein a flow meter is provided in each of the distribution pipes, the flow meter measures a gas supply amount of the distribution pipe.

8. The method for manufacturing a semiconductor device according to claim 1, wherein the state is a state of a component corresponding to the substrate placement surface, the state level is set in terms of an operating time of the component.

9. The method for manufacturing a semiconductor device according to claim 8, wherein the operating time is a cumulative value of a time during which the component is operated.

10. The method for manufacturing a semiconductor device according to claim 8, wherein the operating time is a cumulative value of a time during which the component is operated, and the cumulative operating time is reset after maintenance of the component is performed.

11. The method for manufacturing a semiconductor device according to claim 1, wherein the state is a state of a component corresponding to the substrate placement surface, the state level is set in terms of a number of operations of the component.

12. The method for manufacturing a semiconductor device according to claim 1, wherein the substrate placement surface is provided in a substrate support portion, the component is a heater provided in the substrate support portion.

13. The method of manufacturing a semiconductor device according to Claim 1, wherein the component is a component that constitutes the exhaust section. Further comprising an exhaust section that exhausts ambient gas of the processing vessel, The component is a component that constitutes the exhaust section.

14. The method of manufacturing a semiconductor device according to Claim 1, wherein in the selecting step, the substrate is selected so as to be moved to the substrate placement surface of the higher state level with priority.

15. The method of manufacturing a semiconductor device according to Claim 1, wherein the substrate is either a product substrate or a dummy substrate, In the selecting step, the product substrate is moved to the substrate placement surface of the higher state level, and the dummy substrate is moved to the substrate placement surface of the lower state level than the substrate placement surface to which the product substrate is moved.

16. The method of manufacturing a semiconductor device according to Claim 1, wherein a tendency of the state level of each of the substrate placement surfaces is recorded, and in the selecting step, the substrate is moved to the substrate placement surface of the highest state level.

17. The method of manufacturing a semiconductor device according to Claim 16, wherein in a case where the substrate cannot be moved to the substrate placement surface of the highest state level, the substrate is moved to the substrate placement surface of the next level.

18. The method of manufacturing a semiconductor device according to Claim 1, wherein in the selecting step, the substrate is not moved to the substrate placement surface of the state level that is judged to have an adverse effect on substrate processing. Further comprising: a processing vessel that processes a substrate; a gas supply section that supplies gas to the processing vessel; a plurality of substrate placement surfaces disposed in the processing vessel; a gas supply section having a plurality of distribution pipes corresponding to the substrate placement surfaces; 19. A substrate processing apparatus, characterized by comprising: a detection section that detects, for each component corresponding to the substrate placement surfaces, respectively, information on a component that corresponds to the substrate placement surfaces, respectively, and deteriorates due to substrate processing, and that has a performance deviation for each substrate placement surface, or information on performance performance that compares a performance at the start of operation of the component; a judging section that judges a state level of each of the substrate placement surfaces based on the detected information; a selecting section that selects, based on the state level, the substrate placement surface as a movement destination of the substrate; and a control section configured to control each of the components.

20. A recording medium that stores a program, wherein a substrate processing apparatus is caused by a computer to execute the following steps: a step of supplying gas to a processing vessel via a distribution pipe in a state where a substrate is placed on a substrate placement surface disposed in the processing vessel; ​ ​ ​ ​ ​ ​ detecting, for each of the components corresponding to the substrate placement surfaces respectively, information on the operation of the components corresponding to the substrate placement surfaces respectively and deteriorated due to substrate processing and having a performance deviation for each of the substrate placement surfaces, or information on performance of the components at the start of operation compared with performance at the start of operation of the components; judging a state level of each of the substrate placement surfaces based on the detected information; selecting the substrate placement surface as a moving destination of the substrate to be carried into the processing container next, according to the state level.

21. A substrate processing method, comprising: comprise: a process of supplying a gas to a processing container via a distribution pipe in a state where a substrate is placed on a substrate placement surface provided in the processing container in plural; a process of detecting, for each of the components corresponding to the substrate placement surfaces respectively, information on the operation of the components corresponding to the substrate placement surfaces respectively and deteriorated due to substrate processing and having a performance deviation for each of the substrate placement surfaces, or information on performance of the components at the start of operation compared with performance at the start of operation of the components; a process of judging a state level of each of the substrate placement surfaces based on the detected information; and a process of selecting the substrate placement surface as a moving destination of the substrate to be carried into the processing container next, according to the state level.

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