Vacuum processing device and control method of vacuum processing device

Abstract

The present invention provides a vacuum processing device and a control method for the vacuum processing device. The deviation of the position and inclination of the loading platform caused by the deformation of the processing container is improved. The vacuum processing device comprises: a processing container, which can maintain the interior thereof in a vacuum atmosphere; a loading platform, which is arranged in the processing container and is used to load a substrate; a supporting member, which penetrates a hole in the bottom of the processing container and supports the loading platform from below; a base member, which engages with the end of the supporting member located outside the processing container, and the base member can move integrally with the loading platform; and a plurality of actuators, which are arranged in parallel between the bottom of the processing container and the base member, and the plurality of actuators move the base member relative to the bottom of the processing container, thereby adjusting the position and inclination of the loading platform.

Description

Technical Field

[0001] The present disclosure relates to a vacuum processing apparatus and a control method for the vacuum processing apparatus. Background Art

[0002] Patent Document 1 discloses a structure in which an adjustment plate for adjusting the inclination of a mounting table for mounting a substrate is disposed below the bottom of a processing container, and the bottom of the processing container and the adjustment plate are fastened together with bolts.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 2001-230307 Summary of the Invention

[0006] Problems to be solved by the invention

[0007] The present disclosure provides a technology capable of improving the deviation of the position and inclination of a mounting table caused by deformation of a processing container.

[0008] Solutions for solving problems

[0009] A vacuum processing device of a technical solution disclosed herein comprises: a processing container, which is capable of maintaining a vacuum atmosphere inside; a loading platform, which is arranged in the processing container and is used to load a substrate; a supporting member, which penetrates a hole in the bottom of the processing container and supports the loading platform from below; a base member, which engages with the end of the supporting member located outside the processing container, and the base member is capable of moving integrally with the loading platform; and a plurality of actuators, which are arranged in an array between the bottom of the processing container and the base member, and the plurality of actuators cause the base member to move relative to the bottom of the processing container, thereby adjusting the position and inclination of the loading platform.

[0010] Effects of the Invention

[0011] According to the present disclosure, it is possible to improve the deviation in position and inclination of the mounting table caused by deformation of the processing container. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a schematic plan view showing an example of the structure of the vacuum processing system according to the embodiment.

[0013] Figure 2 It is an exploded perspective view showing an example of the structure of the vacuum processing apparatus according to the embodiment.

[0014] Figure 3 It is a plan view schematically showing the internal structure of the vacuum processing apparatus according to the embodiment.

[0015] Figure 4 It is a schematic cross-sectional view showing an example of the structure of the vacuum processing apparatus according to the embodiment.

[0016] Figure 5 It is a diagram showing an example of the configuration of the rotation drive mechanism and the adjustment mechanism according to the embodiment.

[0017] Figure 6 Yes Figure 5 A diagram showing an example of the structure of an absorption mechanism.

[0018] Figure 7 This is a flowchart showing Example 1 of the flow of a method for controlling a vacuum processing apparatus according to an embodiment.

[0019] Figure 8 This is a flowchart showing a second example of the flow of the method for controlling the vacuum processing apparatus according to the embodiment.

[0020] Figure 9 This is a flowchart showing Example 3 of the flow of the method for controlling the vacuum processing apparatus according to the embodiment.

[0021] Figure 10 This is a flowchart showing Example 4 of the flow of the method for controlling the vacuum processing apparatus according to the embodiment.

[0022] Figure 11 This is a flowchart showing Example 5 of the flow of the method for controlling the vacuum processing apparatus according to the embodiment. DETAILED DESCRIPTION

[0023] Hereinafter, embodiments of the vacuum processing apparatus and the control method of the vacuum processing apparatus disclosed in the present application will be described in detail with reference to the accompanying drawings. Note that the disclosed vacuum processing apparatus and the control method of the vacuum processing apparatus are not limited to the following embodiments.

[0024] When the pressure inside a processing container of a vacuum processing apparatus is switched from atmospheric pressure to a vacuum state, the processing container deforms due to the pressure difference. Furthermore, the processing container can also deform due to temperature changes. When the processing container deforms, the stress generated by the deformation of the processing container is transmitted to the loading platform, causing the loading platform's position and inclination to deviate from the desired position and inclination. For example, as shown in Patent Document 1, a structure in which an adjustment plate is disposed below the bottom of the processing container can be made movable using bolts to improve the deviation of the loading platform's inclination caused by the deformation of the processing container. However, it is difficult to improve the deviation of the loading platform's position. Therefore, a technology is desired to improve the deviation of the loading platform's position and inclination caused by the deformation of the processing container.

[0025] (Implementation Method)

[0026] [Structure of vacuum processing system]

[0027] Figure 1 1 is a schematic top view showing an example of the structure of a vacuum processing system according to an embodiment. The vacuum processing system 1 includes an inlet and outlet port 11, an inlet and outlet module 12, a vacuum transport module 13, and a vacuum processing device 2. Figure 1 In the description, the X direction is defined as the left-right direction, the Y direction is defined as the front-back direction, the Z direction is defined as the top-bottom direction (height direction), and the inlet / outlet port 11 is defined as the front side of the front-back direction. The inlet / outlet ports 11 are connected to the front side of the inlet / outlet module 12 so as to face each other in the front-back direction, and the vacuum transfer module 13 is connected to the back side of the inlet / outlet module 12 so as to face each other in the front-back direction.

[0028] A carrier C, a transport container for accommodating substrates to be processed, is placed on the inlet / outlet port 11. The substrate is a circular wafer W, for example, with a diameter of 300 mm. The inlet / outlet module 12 is used to transfer wafers W between the carrier C and the vacuum transfer module 13. The inlet / outlet module 12 includes an atmospheric transfer chamber 121, which uses a transfer mechanism 120 to transfer wafers W to and from the carrier C under atmospheric pressure, and a load lock chamber 122, which switches the atmosphere in which the wafers W are placed between atmospheric pressure and a vacuum atmosphere.

[0029] The vacuum transfer module 13 has a vacuum transfer chamber 14 in which a vacuum atmosphere is formed. A substrate transfer mechanism 15 is arranged inside the vacuum transfer chamber 14. The vacuum transfer chamber 14 is formed into a rectangle having long sides in the front-to-back direction when viewed from above. The side walls of the four side walls of the vacuum transfer chamber 14, which are located on the long sides of the rectangle facing each other, are each connected to a plurality of (for example, three) vacuum processing devices 2. In addition, the side walls of the four side walls of the vacuum transfer chamber 14, which are located on the short sides near the front, are connected to a load lock chamber 122 provided in the loading and unloading module 12. Gate valves G are arranged between the atmospheric pressure transfer chamber 121 and the load lock chamber 122, between the load lock chamber 122 and the vacuum transfer module 13, and between the vacuum transfer module 13 and the vacuum processing device 2. The gate valves G are used to open and close the loading and unloading ports of the wafers W provided in the modules connected to each other.

[0030] The substrate conveyor mechanism 15 transports wafers W between the loading / unloading module 12 and the vacuum processing apparatus 2 in a vacuum atmosphere. The substrate conveyor mechanism 15 includes a multi-jointed arm and a substrate holder 16 for holding the wafers W. The vacuum processing apparatus 2 performs substrate processing on multiple (e.g., four) wafers W in a batch using a process gas in a vacuum atmosphere. Therefore, the substrate holder 16 of the substrate conveyor mechanism 15 is configured to hold, for example, four wafers W, allowing for the batch transfer of four wafers W to the vacuum processing apparatus 2.

[0031] Specifically, the substrate transport mechanism 15 includes, for example, a base 151, a horizontally extending first arm 152, a horizontally extending second arm 153, and a substrate holder 16. The base of the first arm 152 is provided on the base 151, and the first arm 152 rotates about a vertical rotation axis on the base 151. The base of the second arm 153 is provided on the top of the first arm 152, and the second arm 153 rotates about a vertical rotation axis on the top of the first arm 152. The substrate holder 16 includes a first substrate holder 161, a second substrate holder 162, and a connecting portion 163. The first and second substrate holders 161 and 162 are configured as two elongated scrapers extending horizontally side by side. The connecting portion 163 extends horizontally, perpendicular to the direction in which the first and second substrate-holding portions 161, 162 extend. This connecting portion 163 connects the base ends of the first and second substrate-holding portions 161, 162. The longitudinal center of the connecting portion 163 is located at the top end of the second arm 153, and the connecting portion 163 rotates about a vertical rotation axis at the top end of the second arm 153. The first and second substrate-holding portions 161, 162 will be described later.

[0032] The vacuum processing system 1 includes a control unit 8. The control unit 8 is, for example, a computer including a processor, a storage unit, an input device, a display device, and the like. The control unit 8 controls various components of the vacuum processing system 1. The control unit 8 can use the input device to input commands, etc., so that the operator can manage the vacuum processing system 1. In addition, the control unit 8 can use the display device to visually display the operating status of the vacuum processing system 1. In addition, the storage unit of the control unit 8 stores control programs and process data for controlling various processes performed by the vacuum processing system 1 using the processor. The processor of the control unit 8 executes the control program and controls various components of the vacuum processing system 1 according to the process data, so that the vacuum processing system 1 performs the desired substrate processing.

[0033] [Structure of Vacuum Processing Device]

[0034] Next, refer to Figures 2 to 4 An example in which the vacuum processing apparatus 2 is applied to a film forming apparatus for performing a plasma CVD (Chemical Vapor Deposition) process on a wafer W will be described. Figure 2 It is an exploded perspective view showing an example of the structure of the vacuum processing apparatus 2 according to the embodiment. Figure 3 It is a plan view schematically showing the internal structure of the vacuum processing apparatus 2 according to the embodiment.

[0035] The six vacuum processing devices 2 are constructed similarly to each other, and the wafer W can be processed in parallel between the vacuum processing devices 2. The vacuum processing device 2 includes a processing container (vacuum container) 20 that is rectangular when viewed from above. The processing container 20 is constructed so as to be able to maintain a vacuum atmosphere inside. The processing container 20 is constructed so as to close the open portion of a container body 202 having a concave opening on the upper surface using a top member 201. The processing container 20 has, for example, a side wall portion 203 surrounding the processing container 20. The side wall portion 203 connected to the vacuum transfer chamber 14 among the four side wall portions 203 is formed so as to extend in the front-to-back direction ( Figure 2 Two feeding and discharging ports 21 are formed in a manner arranged in the Y' direction. The feeding and discharging ports 21 are opened and closed by a gate valve G.

[0036] like Figure 2 and Figure 3 As shown in FIG. 1 , inside the processing container 20, a first conveying space T1 and a second conveying space T2 extending horizontally from each of the carrying-in and carrying-out ports 21 and used for conveying wafers W are provided at adjacent positions. In addition, inside the processing container 20, between the first conveying space T1 and the second conveying space T2, a plurality of wafers W are conveyed along the extending direction ( Figure 2An intermediate wall portion 3 is provided in the X' direction in the first conveying space T1. Two processing spaces S1 and S2 are arranged along the extension direction in the first conveying space T1, and two processing spaces S3 and S4 are arranged along the extension direction in the second conveying space T2. Therefore, in the processing container 20, when viewed from the top surface, a total of four processing spaces S1 to S4 are arranged in a 2×2 matrix. The horizontal direction mentioned here also includes the following situation: due to the influence of tolerances during manufacturing, etc., it is slightly tilted relative to the extension direction within a range that does not cause contact between devices during the transfer of wafers W.

[0037] Figure 4 1 is a schematic cross-sectional view showing an example of the structure of the vacuum processing apparatus 2 according to the embodiment. Figure 4 The cross section is equivalent to Figure 3 The cross section of the vacuum processing apparatus 2 taken along line AA is shown. The four processing spaces S1 to S4 are configured similarly to one another and are formed between a mounting table 22 on which wafers W are mounted and a gas supply unit 4 disposed opposite the mounting table 22. In other words, within the processing container 20, a mounting table 22 and a gas supply unit 4 are provided for each of the four processing spaces S1 to S4. Figure 4 1 and 2. The processing space S1 of the first transport space T1 and the processing space S4 of the second transport space T2 are shown in FIG.

[0038] The loading platform 22 also serves as a lower electrode, for example, is formed into a flat cylindrical shape consisting of metal or aluminum nitride (AlN) embedded with a metal mesh electrode. The loading platform 22 is supported from below by a supporting member 23. The supporting member 23 is formed into a cylindrical shape, extending vertically downward and passing through the bottom 27 of the processing container 20. The lower end of the supporting member 23 is located outside the processing container 20 and is connected to the rotary drive mechanism 600. The supporting member 23 is rotated by the rotary drive mechanism 600. The loading platform 22 is configured to rotate as the supporting member 23 rotates. In addition, an adjustment mechanism 700 for adjusting the position and inclination of the loading platform 22 is provided at the lower end of the supporting member 23. The loading platform 22 is configured to be able to be raised and lowered between the processing position and the handover position by means of the supporting member 23 using the adjustment mechanism 700. Figure 4 In the figure, the mounting table 22 at the processing position is depicted by a solid line, and the mounting table 22 at the transfer position is depicted by a dashed line. The processing position refers to the position at which substrate processing (e.g., film formation) is performed, and the transfer position refers to the position at which wafer W is transferred to and from the substrate conveyance mechanism 15. The rotation drive mechanism 600 and the adjustment mechanism 700 will be described later.

[0039] A heater 24 is embedded in the mounting table 22. The heater 24 heats each wafer W mounted on the mounting table 22 to, for example, approximately 60° C. to 600° C. The mounting table 22 is connected to a ground potential.

[0040] The mounting platform 22 is also provided with a plurality (e.g., three) of pin through-holes 26a, each of which houses a lift pin 26. The pin through-holes 26a extend from the mounting surface (top surface) of the mounting platform 22 to the back surface (bottom surface) thereof. The lift pins 26 are inserted into the pin through-holes 26a so as to be slidable. The upper ends of the lift pins 26 are suspended from the mounting surface of the pin through-holes 26a. Specifically, the upper ends of the lift pins 26 have a diameter larger than that of the pin through-holes 26a. A recessed portion is formed at the upper ends of the pin through-holes 26a. This recessed portion has a larger diameter and thickness than the upper ends of the lift pins 26 and is capable of accommodating the upper ends of the lift pins 26. Consequently, the upper ends of the lift pins 26 are secured to the mounting platform 22 and suspended from the mounting surface of the pin through-holes 26a. In addition, the lower ends of the lift pins 26 protrude from the rear surface of the mounting table 22 toward the bottom 27 of the processing container 20 .

[0041] like Figure 4 As shown, when the mounting table 22 is raised to the processing position, the upper ends of the lift pins 26 are received in the recessed portions of the pin through-holes 26a on the mounting side. From this position, when the mounting table 22 is lowered to the transfer position and the lift pins 26 are raised by the lifting mechanism (not shown), the upper ends of the lift pins 26 protrude from the mounting surface of the mounting table 22.

[0042] Here, the first substrate holder 161 and the second substrate holder 162 are described. The first substrate holder 161 is configured to hold a wafer W at a position corresponding to each of the configuration positions of the processing spaces S1 and S2 within the first transport space T1 when the first substrate holder 161 enters the first transport space T1. The positions corresponding to each of the configuration positions of the processing spaces S1 and S2 within the first transport space T1 are positions set so that the wafer W is delivered to the two stages 22 provided in the processing spaces S1 and S2 of the first transport space T1. Furthermore, the second substrate holder 162 is configured to hold a wafer W at a position corresponding to each of the configuration positions of the processing spaces S3 and S4 within the second transport space T2 when the second substrate holder 162 enters the second transport space T2. The positions corresponding to the respective arrangement positions of the processing spaces S3 and S4 in the second transport space T2 are positions set so as to deliver the wafer W to the two mounting tables 22 provided in the processing spaces S3 and S4 in the second transport space T2.

[0043] For example, the width of each of the first substrate holding portion 161 and the second substrate holding portion 162 is formed smaller than the diameter of the wafer W. The first substrate holding portion 161 and the second substrate holding portion 162 each support the back surface of the wafer W at a distance from each other at the distal end side and the proximal end side. For example, the center portion of the wafer W supported by the distal ends of the first substrate holding portion 161 and the second substrate holding portion 162 is supported by the distal ends of the first substrate holding portion 161 and the second substrate holding portion 162.

[0044] In this manner, the substrate transport mechanism 15 , the lift pins 26 , and the mounting tables 22 cooperate to simultaneously transfer, for example, four wafers W in a batch between the substrate transport mechanism 15 and the mounting tables 22 .

[0045] The gas supply unit 4 is disposed above the mounting table 22 on the top member 201 of the processing container 20 via a guide member 34 formed of an insulating member. The gas supply unit 4 functions as an upper electrode. The gas supply unit 4 includes a lid 42; a shower plate 43 disposed opposite the mounting surface of the mounting table 22, forming an opposing surface; and a gas flow chamber 44 formed between the lid 42 and the shower plate 43. A gas supply pipe 51 is connected to the lid 42, and the shower plate 43 has gas ejection holes 45 arranged vertically and horizontally, extending through the thickness of the shower plate 43, for example. Gas is ejected toward the mounting table 22 in a shower-like manner.

[0046] Each gas supply unit 4 is connected to a gas supply system 50 via a gas supply pipe 51. The gas supply system 50 includes, for example, supply sources of reaction gas (film forming gas), purge gas, and cleaning gas, piping, valves V, and a flow rate adjustment unit M.

[0047] A high-frequency power supply 41 is connected to the shower plate 43 via a matching box 40. The shower plate 43 functions as an upper electrode facing the mounting table 22. When high-frequency power is applied between the shower plate 43, which serves as the upper electrode, and the mounting table 22, which serves as the lower electrode, the gas (reactive gas in this example) supplied from the shower plate 43 to the processing space S1 can be converted into plasma by capacitive coupling.

[0048] Next, the exhaust path and the combined exhaust path formed in the intermediate wall portion 3 will be described. Figure 3 and Figure 4 As shown, the middle wall 3 includes exhaust paths 31, each provided for each of the four processing spaces S1 to S4, and a combined exhaust path 32, where these exhaust paths 31 merge. The combined exhaust path 32 extends vertically within the middle wall 3. The middle wall 3 includes a wall body 311 disposed on the container body 202 side and an exhaust path forming member 312 disposed on the top member 201 side. The exhaust paths 31 are provided within the exhaust path forming member 312.

[0049] In addition, an exhaust port 33 is formed on the wall surface of the intermediate wall portion 3 located outside the processing spaces S1 to S4 for each processing space S1 to S4. Each exhaust path 31 is formed in the intermediate wall portion 3 in such a manner as to connect the exhaust port 33 and the merging exhaust path 32. Each exhaust path 31 extends horizontally in the intermediate wall portion 3, bends downward, and extends in the vertical direction to connect with the merging exhaust path 32. For example, the cross section of the exhaust path 31 is formed in a circular shape (see FIG. 1 ). Figure 3 ), the downstream end of each exhaust path 31 is connected to the upstream end of the merged exhaust path 32, and the upstream side of each exhaust path 31 is opened to the outside of each processing space S1~S4 as an exhaust port 33.

[0050] A guide member 34 for exhaust is provided around each processing space S1 to S4 in a manner that surrounds each processing space S1 to S4. The guide member 34 is, for example, an annular body provided in the area around the mounting table 22 located at the processing position so as to surround the mounting table 22 with a gap therebetween. The guide member 34 is configured to form a flow path 35 that is annular in a plan view inside, and the flow path 35 is, for example, rectangular in longitudinal section. Figure 3 , the processing spaces S1 to S4 , the guide member 34 , the exhaust path 31 , and the merged exhaust path 32 are schematically shown.

[0051] like Figure 4 As shown, the guide member 34 is formed into a U-shaped longitudinal cross-section, for example, with the opening of the U facing downward. The guide member 34 is embedded in a recess 204 formed on the intermediate wall 3 and side wall 203 sides of the container body 202, and forms a flow path 35 between the guide member 34 and the members constituting the intermediate wall 3 and side wall 203.

[0052] Guide member 34 embedded in recess 204 forms slit exhaust ports 36 that open toward processing spaces S1-S4. Slit exhaust ports 36 are thus formed along the circumference of each processing space S1-S4. Exhaust port 33 is connected to flow path 35, allowing processing gas exhausted from slit exhaust ports 36 to flow toward exhaust port 33.

[0053] Focus on the group of two processing spaces S1 and S2 arranged along the extending direction of the first conveying space T1 and the group of two processing spaces S3 and S4 arranged along the extending direction of the second conveying space T2. Figure 3 As shown, the group of processing spaces S1 - S2 and the group of processing spaces S3 - S4 are arranged in 180° rotational symmetry around the merged exhaust path 32 when viewed from the top side.

[0054] As a result, the flow paths of the process gas from each of the processing spaces S1 to S4 through the slit exhaust port 36, the flow path 35 of the guide member 34, the exhaust port 33, and the exhaust path 31 to the merging exhaust path 32 are formed with 180° rotational symmetry around the merging exhaust path 32. Furthermore, if we ignore the positional relationship with the first transfer space T1, the second transfer space T2, and the intermediate wall 3 and focus only on the flow paths of the process gas, it can also be said that these flow paths are formed with 90° rotational symmetry around the merging exhaust path 32 when viewed from the top surface.

[0055] The combined exhaust path 32 is connected to the exhaust pipe 61 via the combined exhaust port 205 formed at the bottom 27 of the processing container 20. The exhaust pipe 61 is connected to the vacuum pump 62 constituting the vacuum exhaust mechanism via the valve mechanism 7. For example, one vacuum pump 62 is provided for each processing container 20 (see Figure 1 ), the exhaust pipes 61 on the downstream side of each vacuum pump 62 merge and are connected to, for example, a factory exhaust system.

[0056] The valve mechanism 7 is used to open and close the flow path of the process gas formed in the exhaust pipe 61. The valve mechanism 7 includes, for example, a housing 71 and an opening and closing portion 72. A first opening 73 connected to the exhaust pipe 61 on the upstream side is formed on the upper surface of the housing 71, and a second opening 74 connected to the exhaust pipe 61 on the downstream side is formed on the side surface of the housing 71.

[0057] The opening and closing portion 72 includes, for example, an opening and closing valve 721 formed to a size capable of closing the first opening 73 and a lifting mechanism 722 provided outside the housing 71 for lifting the opening and closing valve 721 in the housing 71. The opening and closing valve 721 is configured to Figure 4 The closed position indicated by the dotted line is Figure 4 The on-off valve 721 can be raised and lowered freely between the open position indicated by the solid line. In the closed position, the on-off valve 721 blocks the first opening 73. In the open position, the on-off valve 721 is retracted to a position below the first opening 73 and the second opening 74. When the on-off valve 721 is in the closed position, the downstream end of the merging exhaust port 205 is blocked, stopping exhaust from within the processing vessel 20. Alternatively, when the on-off valve 721 is in the open position, the downstream end of the merging exhaust port 205 is opened, allowing exhaust from the processing vessel 20.

[0058] Next, refer to Figure 2 and Figure 4, the supply system of the processing gas is described by taking the case of using two reaction gases as an example. A gas supply pipe 51 is connected to the approximate center of the upper surface of each gas supply part 4. The gas supply pipe 51 is connected to the first reaction gas supply source and the purge gas supply source 55 via the first common gas supply path 521 using the first gas supply pipe 511. In addition, the gas supply pipe 51 is connected to the second reaction gas supply source and the purge gas supply source 55 via the second common gas supply path 522 using the second gas supply pipe 512. In addition, in Figure 4 For convenience, the first common gas supply path 521 and the second common gas supply path 522 are collectively referred to as gas supply path 52. Furthermore, the first reactive gas supply source and the second reactive gas supply source are collectively referred to as reactive gas supply source 54. Furthermore, the first gas supply pipe 511 and the second gas supply pipe 512 are collectively referred to as gas supply pipe 510. Valve V2 and flow control unit M2 are used for reactive gas supply, while valve V3 and flow control unit M3 are used for purge gas supply.

[0059] In addition, the gas supply pipe 51 is connected to the cleaning gas supply source 53 via the remote plasma unit (RPU) 531 using the cleaning gas supply path 532. The cleaning gas supply path 532 is branched into 4 systems on the downstream side of the RPU531, and each is connected to the gas supply pipe 51. A valve V1 and a flow adjustment unit M1 are provided on the upstream side of the RPU531 in the cleaning gas supply path 532. In addition, valves V11 to V14 are provided for each branched branch pipe on the downstream side of the RPU531, and the corresponding valves V11 to V14 are opened during cleaning. In addition, in Figure 4 For convenience, only valves V11 and V14 are shown. Taking the example of forming an insulating oxide film (SiO2) by CVD, tetraethoxysilane (TEOS) and oxygen (O2) are used as the reaction gases, and an inert gas such as nitrogen (N2) is used as the purge gas. When TEOS and O2 are used as the reaction gases, TEOS is supplied from a first reaction gas supply source 541, and O2 is supplied from a second reaction gas supply source 542. Furthermore, nitrogen trifluoride (NF3) is used as the purge gas.

[0060] From the perspective of the process gas distributed from the common gas supply path 52, the process gas paths from the gas supply pipes 51 to the gas supply unit 4 are formed so that the electrical conductivities are consistent with each other. Figure 2As shown, the downstream side of the first common gas supply path 521 branches into two systems, and the branched gas supply path further branches into two systems, forming a branched first gas supply pipe 511. The first gas supply pipe 511 is connected to the gas supply pipe 51 downstream of the cleaning gas valves V11 to V14. Furthermore, the downstream side of the second common gas supply path 522 branches into two systems, and the branched gas supply path further branches into two systems, forming a branched second gas supply pipe 512. The second gas supply pipe 512 is connected to the gas supply pipe 51 downstream of the cleaning gas valves V11 to V14.

[0061] The length and inner diameter of each first gas supply pipe 511 from the upstream end (the end connected to the first common gas supply path 521) to the downstream end (the end connected to the gas supply unit 4 or the gas supply pipe 51) are made uniform across all first gas supply pipes 511. Furthermore, the length and inner diameter of each second gas supply pipe 512 from the upstream end (the end connected to the second common gas supply path 522) to the downstream end are made uniform across all second gas supply pipes 512. This ensures that, from the perspective of the process gas distributed from the first common gas supply path 521, the electrical conductivity of each process gas path, from the first gas supply pipe 511, the gas supply unit 4, the processing spaces S1 to S4, and the exhaust path 31 to the combined exhaust path 32, is uniform. In addition, from the perspective of the processing gas distributed from the second common gas supply path 522, the various processing gas paths through the second gas supply pipe 512, the gas supply unit 4, the processing spaces S1 to S4 and the exhaust path 31 to the merged exhaust path 32 are formed to have the same electrical conductivity.

[0062] The vacuum processing apparatus 2 is connected to the control unit 8 of the vacuum processing system 1. The control unit 8 controls the various components of the vacuum processing apparatus 2. The control unit 8 can use an input device to input commands, etc., so that the operator can manage the vacuum processing apparatus 2. In addition, the control unit 8 can use a display device to visually display the operating status of the vacuum processing apparatus 2. In addition, the storage unit of the control unit 8 stores control programs and process data for controlling various processes performed by the vacuum processing apparatus 2 using a processor. The processor of the control unit 8 executes the control program and controls the various components of the vacuum processing apparatus 2 according to the process data, so that the vacuum processing apparatus 2 performs the desired process. For example, the control unit 8 controls the various components of the vacuum processing apparatus 2 so that it performs substrate processing such as etching processing and film forming processing on a substrate introduced into the vacuum processing apparatus 2.

[0063] [Structure of the Rotational Drive Mechanism and Adjustment Mechanism]

[0064] Figure 5This diagram illustrates an example of the structure of the rotational drive mechanism 600 and adjustment mechanism 700 according to an embodiment. A hole 27a is formed in the bottom 27 of the processing chamber 20, corresponding to the position supporting the stage 22. The support member 23, which supports the stage 22 from below, is inserted into the hole 27a. Furthermore, the rotational drive mechanism 600 is connected to the lower end 23a of the support member 23, which is located outside the processing chamber 20.

[0065] The rotation drive mechanism 600 includes a rotation shaft 610 , a motor 620 , and a vacuum seal 630 .

[0066] The rotating shaft 610 is connected to the lower end portion 23a of the support member 23 and is configured to rotate integrally with the support member 23. A slip ring 621 is provided at the lower end portion of the rotating shaft 610. The slip ring 621 has an electrode and is electrically connected to various wirings for supplying power to components around the mounting table 22. For example, the slip ring 621 is electrically connected to wiring for supplying power to the heater 24 embedded in the mounting table 22. In addition, for example, when an electrostatic chuck for electrostatically adsorbing the wafer W is provided on the mounting table 22, the slip ring 621 is electrically connected to wiring for applying a DC voltage to the electrostatic chuck.

[0067] Motor 620 is connected to rotating shaft 610 to rotate rotating shaft 610. When rotating shaft 610 rotates, stage 22 rotates via support member 23. As rotating shaft 610 rotates, slip ring 621 also rotates along with rotating shaft 610, while maintaining electrical connection between slip ring 621 and various wiring used to supply power to components surrounding stage 22.

[0068] The vacuum seal 630 is, for example, a magnetic fluid seal, and is provided around the rotating shaft 610 , and can maintain the rotation of the rotating shaft 610 while hermetically sealing the rotating shaft 610 .

[0069] Furthermore, an adjustment mechanism 700 is engaged with the lower end portion 23 a of the support member 23 via a vacuum seal 630 .

[0070] The adjustment mechanism 700 includes a base member 710 , a plurality of (eg, six) actuators 720 , an absorbing mechanism 730 , and a bellows 740 .

[0071] The base member 710 is configured to engage with the lower end portion 23a of the support member 23, located outside the processing chamber 20, via the vacuum seal 630, and is movable integrally with the stage 22. For example, a hole 711 having a diameter larger than the diameter of the lower end portion 23a of the support member 23 is formed in the base member 710. The support member 23 passes through the hole 711, and the lower end portion 23a is connected to the rotating shaft 610. The vacuum seal 630 is provided around the rotating shaft 610 connected to the lower end portion 23a of the support member 23, and the base member 710 is fixed to the upper surface of the vacuum seal 630. Thus, the base member 710 is connected to the stage 22 via the vacuum seal 630, the rotating shaft 610, the support member 23, and the like, and is movable integrally with the stage 22.

[0072] A plurality of actuators 720 are arranged in parallel between the bottom 27 of the processing container 20 and the base member 710, and move the base member 710 relative to the bottom 27 of the processing container 20, thereby adjusting the position and inclination of the mounting table 22. The plurality of actuators 720 are extendable and retractable, and are connected to the base member 710 in a rotatable and slidable manner via a universal joint, and are also connected to the bottom 27 side of the processing container 20 in a rotatable and slidable manner via a universal joint. The base member 710 and the plurality of actuators 720 form a parallel linkage mechanism, which can move the base member 710 to, for example, Figure 5 The base member 710 moves in the direction of the X' axis, the direction of the Y' axis, and the direction of rotation around the X' axis, the direction of rotation around the Y' axis, and the direction of rotation around the Z' axis. The moving coordinate system of the parallel linkage mechanism formed by the base member 710 and the plurality of actuators 720 is pre-adjusted to be consistent with the coordinate system of the processing container 20. The bottom 27 of the processing container and the base member 710 are connected by a parallel linkage mechanism, so that the plurality of actuators 720 can move the base member 710 relative to the bottom 27 of the processing container 20. In this way, the position and inclination of the mounting table 22 can be adjusted. For example, the plurality of actuators 720 move the base member 710 in a direction orthogonal to the outer wall surface of the bottom 27 of the processing container 20 (for example, Figure 5 The position of the stage 22 is adjusted by moving the base member 710 in the Z′-axis direction. For example, the plurality of actuators 720 move the base member 710 in the direction along the outer wall surface of the bottom 27 of the processing container 20 (for example, Figure 5 The base member 710 is moved in the X'-axis direction and the Y'-axis direction of the processing container 20 to adjust the position of the mounting table 22. In addition, for example, the plurality of actuators 720 adjust the position of the mounting table 22 by making the base member 710 face the outer wall of the bottom 27 of the processing container 20 in a predetermined direction (for example, Figure 5 The inclination of the mounting table 22 is adjusted by tilting the mounting table 22 in the direction of rotation about the X′ axis and the direction of rotation about the Y′ axis).

[0073] Furthermore, by using various detection devices to detect the position and inclination of the base member 710, the position and inclination of the mounting table 22 adjusted by the plurality of actuators 720 can be determined. Examples of the detection devices include linear encoders, gyro sensors, triaxial acceleration sensors, and laser trackers.

[0074] Furthermore, in vacuum processing apparatus 2, when the pressure inside processing container 20 is switched from atmospheric pressure to a vacuum state, processing container 20 deforms due to the pressure differential. Furthermore, heat from substrate processing within processing container 20 is transferred, causing the temperature to change, which in turn causes the processing container 20 to deform. Deformation of processing container 20 can cause stress generated by the deformation of processing container 20 to be transferred to mounting table 22, potentially causing changes in the position and inclination of mounting table 22.

[0075] Therefore, in the vacuum processing apparatus 2 of this embodiment, a plurality of actuators 720 are disposed between the bottom 27 of the processing container 20 and a base member 710 that is movable integrally with the mounting table 22. The plurality of actuators 720 adjust the position and inclination of the mounting table 22 by moving the base member 710 relative to the bottom 27. Thus, even if the position and inclination of the mounting table 22 change due to deformation of the processing container 20, the position and inclination of the mounting table 22 can be adjusted to their original positions and inclinations. As a result, the vacuum processing apparatus 2 of this embodiment can mitigate deviations in the position and inclination of the mounting table 22 caused by deformation of the processing container 20, thereby improving the in-plane uniformity of substrate processing, such as film deposition processing.

[0076] The absorption mechanism 730 is provided on the bottom 27 of the processing container 20 to absorb deformation of the bottom of the processing container 20. The absorption mechanism 730 includes a hole 731 that communicates with the interior of the processing container 20 via the hole 27a in the bottom 27 of the processing container 20. The plurality of actuators 720 are not directly connected to the bottom 27 of the processing container 20, but are instead connected to the absorption mechanism 730. Therefore, even if the bottom 27 of the processing container 20 deforms, the stress generated by the deformation is absorbed by the absorption mechanism 730 and not transmitted to the plurality of actuators 720. This can prevent a decrease in the accuracy of adjusting the position and inclination of the stage 22. The absorption mechanism 730 will be described in detail later.

[0077] The bellows 740 is provided so as to surround the supporting member 23. The upper end of the bellows 740 passes through the hole 731 formed in the absorption mechanism 730 and is connected to the bottom 27 of the processing container 20, and the lower end of the bellows 740 is connected to the base member. Thus, the bellows 740 hermetically seals the space between the bottom 27 of the processing container 20 and the base member 710. The bellows 740 is configured to be able to expand and contract according to the movement of the base member 710. For example, when the base member 710 is moved in a direction perpendicular to the outer wall surface of the bottom 27 of the processing container 20 (for example, Figure 5 When the bellows 740 moves in the Z′-axis direction, the bellows 740 expands and contracts in the Z′-axis direction. In addition, for example, when the base member 710 moves in the direction along the outer wall surface of the bottom 27 of the processing container 20 (for example, Figure 5 When the bellows 740 moves in the X'-axis direction and the Y'-axis direction, the bellows 740 expands and contracts in the X'-axis direction and the Y'-axis direction. In addition, for example, when the base member 710 moves relative to the outer wall surface of the bottom 27 of the processing container 20 in a predetermined direction (for example, Figure 5 When the base member 710 moves in the directions of rotation about the X' axis and the Y' axis, the bellows 740 expands and contracts in the directions of rotation about the X' axis and the Y' axis. The vacuum processing apparatus 2 is configured such that, even when the base member 710 moves, the bellows 740 expands and contracts, preventing atmospheric air from flowing into the processing container 20 through the space between the bottom 27 of the processing container 20 and the base member 710, the hole 731, and the hole 27a.

[0078] Here, refer to Figure 6 An example of the structure of the absorption mechanism 730 will be described. Figure 6 Yes Figure 5 FIG. 7 is a diagram showing an example of the structure of the absorption mechanism 730. The absorption mechanism 730 includes a plate member 732 and a rod member 733.

[0079] The plate member 732 is formed in a circular plate shape and is disposed below the bottom 27 of the processing container 20. From the perspective of blocking the transmission of heat and vibration from the processing container 20, the plate member 732 is disposed with a gap from the outer wall surface of the bottom 27 of the processing container 20.

[0080] One end of the rod member 733 is rotatably and slidably connected to the bottom 27 of the processing container 20, and the other end of the rod member 733 is rotatably and slidably connected to the plate member 732. Specifically, a recess 27b is formed on the outer wall of the bottom 27 of the processing container 20, and a spherical bearing 27c is mounted in this recess 27b for free rotation and sliding. One end 733a of the rod member 733 is rotatably and slidably connected to the bottom 27 of the processing container 20 by being coupled to the spherical bearing 27c. Furthermore, a recess 732a is formed on the upper surface of the plate member 732 at a position corresponding to the recess 27b, and a spherical bearing 732b is mounted in this recess 732a for free rotation and sliding. The other end 733b of the rod member 733 is rotatably and slidably connected to the plate member 732 by being coupled to the spherical bearing 732b. The lever member 733 rotates in a direction corresponding to the deformation of the bottom 27 of the processing container 20, thereby suppressing the deformation from being transmitted to the plate member 732. Figure 6 When the rod member 733 is deformed in the direction of the arrow, the rod member 733 receives the stress of the deformation of the bottom 27, but the rod member 733 moves together with the bottom 27. Figure 6 The plate member 732 is rotated in the direction of the arrow, thereby suppressing the transmission of deformation to the plate member 732. The plurality of actuators 720 are connected to the plate member 732. Thus, the stress generated by the deformation of the bottom 27 of the processing container 20 is not transmitted to the plurality of actuators 720 via the plate member 732, thereby suppressing a decrease in the accuracy of adjusting the position and inclination of the mounting table 22.

[0081] The rod members 733 are arranged at multiple locations along the circumference of the plate member 732. For example, three rod members 733 are provided at equal intervals along the circumference of the plate member 732 at multiple locations inside the edge of the plate member 732. Alternatively, four or more rod members 733 may be provided at equal intervals along the circumference of the plate member 732.

[0082] [Specific Example of Flow of Method for Controlling Vacuum Processing Apparatus]

[0083] Next, a specific example of the flow of the method for controlling the vacuum processing apparatus 2 according to the embodiment will be described. Figure 7 This is a flowchart showing Example 1 of the flow of a method for controlling the vacuum processing apparatus 2 according to the embodiment.

[0084] The control unit 8 controls the substrate transfer mechanism 15 to transfer the wafer W toward the vacuum processing apparatus 2 (step S101 ).

[0085] The control unit 8 calculates the deviation amount of the wafer W when it is transported by the substrate transport mechanism 15 as the correction amount of the position of the wafer W (step S102). For example, the calculation of the correction amount of the position of the wafer W is performed by detecting the deviation amount between the wafer W and the target position of the transport performed by the substrate transport mechanism 15 using a position detection sensor set at an arbitrary position on the transport path of the wafer W. The position detection sensor is, for example, provided in a vacuum transport chamber 14 in which the substrate transport mechanism 15 is configured. In addition, the position detection sensor can also be provided at the feed-in and feed-out port 21 of the vacuum processing device 2. In addition, the target position refers to the loading position of the wafer W on the loading table 22, for example, the position where the center of the loading table 22 is aligned with the center of the wafer W.

[0086] The control unit 8 controls the plurality of actuators 720 to move the base member 710 from a predetermined reference position by the correction amount calculated in step S102 (step S103). The reference position is, for example, a position where the center of the mounting table 22 is aligned with the center of the processing container 20. As the base member 710 moves, the mounting table 22 also moves from the reference position by the correction amount.

[0087] When the substrate conveying mechanism 15 arrives at the vacuum processing apparatus 2, the control unit 8 controls the substrate conveying mechanism 15 to convey the wafer W to the upper portion of the target position in the processing container 20. Then, the control unit 8 transfers the wafer W between the mounting table 22 and the substrate conveying mechanism 15 (step S104). At this stage, the center of the mounting table 22 is aligned with the center of the wafer W. In addition, the transfer of the wafer W in step S104 can be performed using the method described later. Figure 8 way to achieve it.

[0088] The control unit 8 controls the plurality of actuators 720 to move the base member 710 toward the reference position (step S105). As the base member 710 moves, the mounting table 22 also moves toward the reference position. At this stage, the center of the mounting table 22, the center of the wafer W, and the center of the processing container 20 are aligned.

[0089] In this manner, in vacuum processing apparatus 2, instead of moving substrate transfer mechanism 15 by the calibration amount, base member 710 and mounting table 22 are moved integrally by the calibration amount to transfer wafers W. This reduces the transfer load on substrate transfer mechanism 15. Consequently, the overall productivity of vacuum processing system 1 can be improved.

[0090] In addition, Figure 7In the process, steps S103 to S105 are executed in parallel for each of the four processing spaces S1 to S4 within the processing container 20. Thus, if the substrate transfer mechanism 15 transfers the four wafers W to the four processing spaces S1 to S4 within the processing container 20 in batches, the wafers W can be transferred in batches between the mounting table 22 and the substrate transfer mechanism 15 (step S104). As a result, the overall productivity of the vacuum processing system 1 can be further improved.

[0091] Figure 8 This is a flowchart showing a second example of the flow of the method for controlling the vacuum processing apparatus 2 according to the embodiment. Figure 8 The control method shown is suitable for example for Figure 7 The wafer W is delivered in step S104. In the initial stage, the mounting table 22 is located at the processing position.

[0092] The control unit 8 controls the plurality of actuators 720 so that the base member 710 and the mounting table 22 move downward (ie, Figure 5 The mounting table 22 is moved in the negative direction of the Z′ axis (step S201).

[0093] The controller 8 causes the lower ends of the lift pins 26 to contact the bottom 27 of the processing container 20 as the mounting table 22 moves downward, thereby causing the upper ends of the lift pins 26 to protrude from the mounting surface of the mounting table 22 (step S202). At this stage, the mounting table 22 has been lowered from the processing position to the transfer position.

[0094] The control unit 8 controls the plurality of actuators 720 so that the base member 710 and the mounting table 22 move upward (ie, Figure 5 The mounting table 22 is moved in the positive direction of the Z′ axis (step S203). As a result, the mounting table 22 starts to rise.

[0095] As the mounting table 22 moves upward, the controller 8 separates the lower ends of the lift pins 26 from the bottom 27 of the processing container 20, thereby retracting the upper ends of the lift pins 26 into the mounting surface of the pin through-holes 26a (step S204). At this stage, the mounting table 22 is raised to the processing position.

[0096] In this manner, in the vacuum processing apparatus 2, the projection and retraction of the lift pins 26 can be achieved by raising and lowering the base member 710. Therefore, the lift pin drive mechanism for driving the lift pins 26 can be omitted, and the number of components within the processing container 20 can be reduced. In this case, within the processing container 20, substrate processing of the wafer W may be performed by generating plasma. In this case, the components within the processing container 20 are consumed by the plasma, and particles generated by the consumed components may degrade the processing characteristics of the wafer W. In contrast, in the vacuum processing apparatus 2, the number of components within the processing container 20 can be reduced by eliminating the lift pin drive mechanism, thereby reducing the risk of particle generation. Furthermore, there is no need to separately provide a lifting mechanism for the mounting table 22; instead, the mounting table 22 can be raised and lowered using the adjustment mechanism 700.

[0097] Figure 9 This is a flowchart showing Example 3 of the flow of a control method for the vacuum processing apparatus 2 according to the embodiment. In the following description, a film thickness sensor is disposed around the shower plate 43. The film thickness sensor is configured to detect the film thickness of the wafer W within a predetermined detection range in a non-contact manner.

[0098] The control unit 8 controls the plurality of actuators 720 to move the base member 710 until the wafer W placed on the mounting table 22 is within the detection range of the film thickness sensor (step S301). For example, the control unit 8 controls the plurality of actuators 720 to tilt the base member 710 until the wafer W placed on the mounting table 22 is within the detection range of the film thickness sensor.

[0099] In this manner, in vacuum processing apparatus 2, wafer W placed on mounting table 22 can be moved into the detection range of the film thickness sensor. Therefore, even when the film thickness sensor is disposed around shower plate 43 facing mounting table 22, vacuum processing apparatus 2 can perform real-time film thickness detection during substrate processing.

[0100] Figure 10 4 is a flowchart showing a fourth example of a flow of a method for controlling the vacuum processing apparatus 2 according to the embodiment. Figure 10 The control method shown uses a distance measurement substrate that can measure the distance (hereinafter referred to as "gap") between the mounting table 22 and the shower plate 43 at multiple locations within the mounting surface of the mounting table 22. The distance measurement substrate has a wireless communication function that transmits the gaps measured at multiple locations within the mounting surface of the mounting table 22 as measurement results to the control unit 8.

[0101] The control unit 8 places the distance measurement substrate on the mounting table 22 (step S401). The control unit 8 instructs the distance measurement substrate to measure the gap. The distance measurement substrate transmits the gaps measured at multiple positions around the mounting table 22 as measurement results to the control unit 8.

[0102] Based on the measurement results of the distance measurement substrate, the control unit 8 controls the plurality of actuators 720 to move the base member 710 to positions where the distances (ie, gaps) between the plurality of positions on the mounting surface of the mounting table 22 are within a predetermined range (step S402 ).

[0103] Thus, in vacuum processing apparatus 2, the gap can be made uniform at multiple locations within the mounting surface of mounting table 22 without opening processing container 20. As a result, vacuum processing apparatus 2 can improve the in-plane uniformity of substrate processing on wafer W while maintaining the vacuum state of processing container 20.

[0104] Figure 11 This is a flowchart showing Example 5 of the flow of the control method of the vacuum processing apparatus 2 according to the embodiment.

[0105] The control unit 8 obtains measurement data, which is obtained by measuring each substrate processing performed in the processing container 20, and represents the position and inclination of the carrier 22 corresponding to the state of the wafer W that meets the specified conditions (step S501). For example, the control unit 8 obtains the measurement data by reading the measurement data from the storage unit of the control unit 8. The state of the wafer W refers to, for example, a numerical value representing the film quality of the film formed on the wafer W using substrate processing. In addition, when the measurement data is stored in other devices, the control unit 8 can also obtain the measurement data from other devices via the network. In addition, the control unit 8 can also obtain the measurement data by generating the measurement data using machine learning, which is based on the position and inclination of the carrier 22 corresponding to the state of the wafer W processed by each substrate.

[0106] The control unit 8 performs substrate processing in the processing container 20 (step S502 ).

[0107] The control unit 8 determines whether the time to switch the substrate process being executed has arrived (step S503). If the time to switch has not arrived (step S503: No), the control unit 8 continues the substrate process being executed.

[0108] If the time for switching has arrived (step S503: Yes), the control unit 8 determines whether all substrate processes have been completed (step S504). If all substrate processes have not been completed (step S504: No), the control unit 8 controls the plurality of actuators 720 based on the measurement data acquired in step S501 (step S505). Specifically, the control unit 8 refers to the measurement data to determine the position and inclination of the stage 22 corresponding to the next substrate process to be switched. The control unit 8 then controls the plurality of actuators 720 to move the base member 710 so that the position and inclination of the stage 22 attain the determined position and inclination. After moving the base member 710, the control unit 8 returns the process to step S502 and executes the next substrate process to be switched within the processing container 20.

[0109] In addition, when the execution of all substrate processes has been completed (step S504 : Yes), the control unit 8 ends the process.

[0110] In this manner, vacuum processing apparatus 2 can dynamically adjust the position and inclination of mounting table 22 for each substrate process. As a result, vacuum processing apparatus 2 can achieve optimal processing results for each substrate process while continuously performing substrate processes.

[0111] (Effects of the embodiment)

[0112] As described above, the vacuum processing apparatus 2 of the embodiment includes a processing container 20, a mounting table 22, a support member 23, a base member 710, and a plurality of actuators 720. The processing container 20 is configured to maintain a vacuum atmosphere within its interior. The mounting table 22 is disposed within the processing container 20 and is used to mount a wafer W (substrate). The support member 23 extends through a hole in the bottom 27 of the processing container 20 and supports the mounting table 22 from below. The base member 710 is configured to engage with the end of the support member 23 located outside the processing container 20 and to be movable integrally with the mounting table 22. The plurality of actuators 720 are arranged in a mutually aligned manner between the bottom 27 of the processing container 20 and the base member 710. The plurality of actuators 720 move the base member 710 relative to the bottom 27 of the processing container 20, thereby adjusting the position and inclination of the mounting table 22. Thus, the vacuum processing apparatus 2 can improve deviations in the position and inclination of the mounting table 22 caused by deformation of the processing container 20.

[0113] Furthermore, the base member 710 and the plurality of actuators 720 form a parallel linkage mechanism capable of moving the base member 710 in the directions of multiple axes and in rotational directions about each axis. The base member 710 and the plurality of actuators 720 are coupled to the bottom 27 of the processing container 20 and the base member 710 via this parallel linkage mechanism. Thus, the vacuum processing apparatus 2 utilizes the operation of the parallel linkage mechanism to move the base member 710 relative to the bottom 27 of the processing container 20, thereby reducing deviations in the position and inclination of the mounting table 22.

[0114] Furthermore, the plurality of actuators 720 adjust the position of the mounting table 22 by moving the base member 710 in a direction perpendicular to the outer wall surface of the bottom 27 of the processing container 20. Thus, the vacuum processing apparatus 2 can improve positional deviation of the mounting table 22 in a direction perpendicular to the outer wall surface of the bottom 27 of the processing container 20.

[0115] Furthermore, the plurality of actuators 720 adjust the position of the mounting table 22 by moving the base member 710 in a direction along the outer wall surface of the bottom 27 of the processing container 20. Thus, the vacuum processing apparatus 2 can improve positional deviation of the mounting table 22 in a direction along the outer wall surface of the bottom 27 of the processing container 20.

[0116] Furthermore, the plurality of actuators 720 adjust the inclination of the mounting table 22 by tilting the base member 710 relative to the outer wall surface of the bottom 27 of the processing container 20. Thus, the vacuum processing apparatus 2 can improve the deviation of the inclination of the mounting table 22 relative to the bottom 27 of the processing container 20.

[0117] The vacuum processing apparatus 2 also includes a bellows 740 (expandable member) disposed around the support member 23 to airtightly seal the space between the bottom 27 of the processing container 20 and the base member 710. The bellows 740 is capable of expanding and contracting in response to the movement of the base member 710. Thus, the vacuum processing apparatus 2 can prevent atmospheric air from flowing into the processing container 20 even when the base member 710 moves.

[0118] The vacuum processing apparatus 2 further includes an absorption mechanism 730 that absorbs deformation of the bottom 27 of the processing container 20. Multiple actuators are connected to the absorption mechanism 730. Thus, stress generated by deformation of the bottom 27 of the processing container 20 is absorbed by the absorption mechanism 730 and not transmitted to the multiple actuators 720. Therefore, the vacuum processing apparatus 2 can suppress a decrease in the accuracy of adjusting the position and inclination of the mounting table 22.

[0119] The absorption mechanism 730 includes a plate member 732 and a rod member 733. One end of the rod member 733 is rotatably and slidably connected to the bottom 27 of the processing container 20, and the other end of the rod member 733 is rotatably and slidably connected to the plate member 732. The rod member 733 rotates in a direction corresponding to the deformation of the bottom 27 of the processing container 20, thereby suppressing the transmission of deformation to the plate member 732. The plurality of actuators 720 are connected to the plate member 732. As a result, the stress generated by the deformation of the bottom 27 of the processing container 20 is absorbed by the plate member 732 and not transmitted to the plurality of actuators 720. Therefore, the vacuum processing apparatus 2 can suppress a decrease in the accuracy of adjusting the position and inclination of the mounting table 22.

[0120] Furthermore, the plate member 732 is disposed at a distance from the outer wall surface of the bottom 27 of the processing container 20 . This allows the vacuum processing apparatus 2 to block the transmission of heat and vibration from the processing container 20 to the plate member 732 .

[0121] Furthermore, the control method of the vacuum processing apparatus 2 according to the embodiment includes the following steps: calculating the deviation of a wafer W (substrate) when being conveyed by a substrate conveying mechanism 15 (conveyance mechanism) as a correction amount for the position of the wafer W; controlling a plurality of actuators 720 to move a base member 710 from a predetermined reference position by the correction amount; transferring the wafer W between the substrate conveying mechanism 15 and the mounting table 22 that moves with the base member 710; and, after transferring the wafer W, controlling the plurality of actuators 720 to move the base member 710 back to the reference position. Thus, the vacuum processing apparatus 2 can improve the overall productivity of the vacuum processing system 1.

[0122] Furthermore, a pin through-hole 26a is formed in the mounting table 22. This pin through-hole 26a extends through the mounting surface and the back surface opposite the mounting surface of the mounting table 22. The vacuum processing apparatus 2 further includes a lift pin 26 slidably inserted into the pin through-hole 26a. The upper end of the lift pin 26 is suspended from the side of the pin through-hole 26a that is closer to the mounting surface of the mounting table 22, and the lower end of the lift pin 26 protrudes from the back surface of the mounting table 22 toward the bottom 27 of the processing container 20. The control method of the vacuum processing apparatus 2 of the embodiment may also include the following steps: controlling the plurality of actuators 720 to move the base member 710 downwardly along with the mounting table 22; causing the lower ends of the lift pins 26 to abut against the bottom 27 of the processing container 20 as the mounting table 22 moves downwardly, thereby causing the upper ends of the lift pins 26 to protrude from the mounting surface of the mounting table 22; controlling the plurality of actuators 720 to move the base member 710 upwardly along with the mounting table 22; and causing the lower ends of the lift pins 26 to separate from the bottom 27 of the processing container 20 as the mounting table 22 moves upwardly, thereby causing the upper ends of the lift pins 26 to be retracted into the pin through-holes 26a on the mounting surface of the mounting table 22. Thus, the vacuum processing apparatus 2 can reduce the number of components within the processing container 20 by reducing the number of lift pin driving mechanisms, thereby reducing the risk of particle generation.

[0123] The vacuum processing apparatus 2 further includes a shower plate 43 (upper electrode) disposed within the processing chamber 20 opposite the mounting table 22, and a film thickness sensor disposed around the shower plate 43, capable of non-contactly detecting the film thickness of wafers W within a predetermined detection range. The control method for the vacuum processing apparatus 2 of the embodiment may further include controlling the plurality of actuators 720 to move the base member 710 until the wafer W mounted on the mounting table 22 is within the detection range of the film thickness sensor. Thus, even when the film thickness sensor is disposed around the shower plate 43 opposite the mounting table 22, the vacuum processing apparatus 2 can perform real-time film thickness detection during substrate processing.

[0124] Furthermore, the control method for vacuum processing apparatus 2 according to the embodiment includes the following steps: placing a distance measurement substrate on stage 22, capable of measuring the distance between stage 22 and shower plate 43 (upper electrode) at multiple locations within the mounting surface of stage 22; and controlling multiple actuators 720 based on the measurement results of the distance measurement substrate to move base member 710 to a position where the distances at the multiple locations within the mounting surface of stage 22 are within a predetermined range. Thus, vacuum processing apparatus 2 can improve the in-plane uniformity of substrate processing performed on wafers W while maintaining the vacuum state of processing chamber 20.

[0125] The control method of the vacuum processing apparatus 2 according to the embodiment includes the following steps: acquiring measurement data, obtained for each substrate process performed within the processing container 20, indicating the position and tilt of the mounting table 22 corresponding to the state of the wafer W (substrate) meeting predetermined conditions; sequentially performing substrate processes within the processing container 20; and controlling the plurality of actuators 720 based on the measurement data at the time of each substrate process switch. Thus, by continuously and sequentially performing substrate processes, the vacuum processing apparatus 2 can achieve optimal processing results for each substrate process.

[0126] The above embodiments have been described, but it should be understood that the embodiments disclosed this time are illustrative in all respects and are not restrictive. The above embodiments may be omitted, replaced, or modified in various forms without departing from the scope of the claims and their gist.

[0127] For example, in the above embodiment, the vacuum processing apparatus 2 is described as an apparatus that performs plasma CVD processing as substrate processing. However, the disclosed technology can be applied to any apparatus that performs other substrate processing such as plasma etching.

[0128] In the above embodiment, the plurality of actuators 720 are connected to the base member 710 via universal joints in a manner that allows rotation and sliding, and the plurality of actuators 720 are connected to the bottom 27 side (i.e., the bottom 27 side) of the processing container 20 via universal joints in a manner that allows rotation and sliding. Figure 5 The description above uses the example of a case where the actuator 720 is connected to the vacuum seal 630 (e.g., the suction mechanism 730). However, the disclosed technology is not limited to this. The suction mechanism 730 can be omitted, and one end of the actuator 720 can be rotatably and slidably connected to the bottom 27 of the processing container 20 via a universal joint. Alternatively, the base member 710 can be omitted, and the other end of the actuator 720 can be rotatably and slidably connected to a portion of the vacuum seal 630 via a universal joint. In this case, the vacuum seal 630 functions as the base member.

Claims

1. A vacuum processing device, wherein: The vacuum processing device has: a processing container capable of maintaining a vacuum atmosphere therein; a mounting table, which is provided in the processing container and is used to mount a substrate; a supporting member penetrating the hole in the bottom of the processing container to support the mounting table from below; a base member engaged with a portion of the support member located outside the processing container, the base member being movable integrally with the mounting table; as well as a plurality of actuators arranged in parallel between the bottom of the processing container and the base member, the plurality of actuators moving the base member relative to the bottom of the processing container to adjust the position and inclination of the mounting table; The vacuum processing device further comprises an absorption mechanism for absorbing deformation of the bottom of the processing container. The plurality of actuators are connected to the absorption mechanism, Wherein, the absorption mechanism comprises: a plate member; and a rod member having one end connected to the bottom of the processing container and the other end connected to the plate member, wherein the rod member suppresses transmission of the deformation to the plate member; The plurality of actuators are coupled to the plate member, wherein the one end of the rod member is connected to the bottom of the processing container in a rotatable and slidable manner, and / or the other end of the rod member is connected to the plate member in a rotatable and slidable manner, The lever member rotates in a direction corresponding to the deformation of the bottom of the processing container.

2. The vacuum processing apparatus according to claim 1, wherein The base member and the plurality of actuators form a parallel link mechanism capable of moving the base member in directions of a plurality of axes and in rotational directions around the axes. The bottom of the processing container and the base member are connected by the parallel link mechanism.

3. The vacuum processing apparatus according to claim 1 or 2, wherein: The plurality of actuators adjust the position of the mounting table by moving the base member in a direction perpendicular to an outer wall surface of the bottom of the processing container.

4. The vacuum processing apparatus according to claim 1 or 2, wherein: The plurality of actuators adjust the position of the mounting table by moving the base member in a direction along the outer wall surface of the bottom of the processing container.

5. The vacuum processing apparatus according to claim 1 or 2, wherein: The plurality of actuators adjust the inclination of the mounting table by tilting the base member relative to an outer wall surface of the bottom of the processing container.

6. The vacuum processing apparatus according to claim 1 or 2, wherein: The vacuum processing apparatus further includes a telescopic member provided around the support member to airtightly seal the space between the bottom of the processing container and the base member, the telescopic member being capable of extending and contracting in response to movement of the base member.

7. The vacuum processing apparatus according to claim 1, wherein: The plate member is disposed with a gap therebetween from an outer wall surface of the bottom portion of the processing container.

8. A method for controlling a vacuum processing device, the vacuum processing device comprising: a processing container capable of maintaining a vacuum atmosphere therein; a mounting table, which is provided in the processing container and is used to mount a substrate; a supporting member penetrating the hole in the bottom of the processing container to support the mounting table from below; a base member engaged with a portion of the support member located outside the processing container, the base member being movable integrally with the mounting table; as well as a plurality of actuators arranged in parallel between the bottom of the processing container and the base member, the plurality of actuators moving the base member relative to the bottom of the processing container to adjust the position and inclination of the mounting table; The vacuum processing device further comprises an absorption mechanism for absorbing deformation of the bottom of the processing container. The plurality of actuators are connected to the absorption mechanism, Wherein, the absorption mechanism comprises: a plate member; and a rod member having one end connected to the bottom of the processing container and the other end connected to the plate member, wherein the rod member suppresses transmission of the deformation to the plate member; The plurality of actuators are coupled to the plate member, wherein the one end of the rod member is connected to the bottom of the processing container in a rotatable and slidable manner, and / or the other end of the rod member is connected to the plate member in a rotatable and slidable manner, The lever member rotates in a direction corresponding to the deformation of the bottom of the processing container. The control method of the vacuum processing device includes the following steps: calculating a deviation amount between the substrate and a target position when the substrate is transported by the transport mechanism as a correction amount for the position of the substrate; controlling the plurality of actuators so as to move the base member from a predetermined reference position by the correction amount; The substrate is transferred between the transport mechanism and the mounting table that moves together with the base member; and After the substrate is transferred, the plurality of actuators are controlled to move the base member to the reference position.

9. A method for controlling a vacuum processing device, the vacuum processing device comprising: a processing container capable of maintaining a vacuum atmosphere therein; a mounting table, which is provided in the processing container and is used to mount a substrate; a supporting member penetrating the hole in the bottom of the processing container to support the mounting table from below; a base member engaged with a portion of the support member located outside the processing container, the base member being movable integrally with the mounting table; as well as a plurality of actuators arranged in parallel between the bottom of the processing container and the base member, the plurality of actuators moving the base member relative to the bottom of the processing container to adjust the position and inclination of the mounting table; The vacuum processing device further comprises an absorption mechanism for absorbing deformation of the bottom of the processing container. The plurality of actuators are connected to the absorption mechanism, Wherein, the absorption mechanism has: a plate member; and a rod member having one end connected to the bottom of the processing container and the other end connected to the plate member, wherein the rod member suppresses transmission of the deformation to the plate member; The plurality of actuators are coupled to the plate member, wherein the one end of the rod member is connected to the bottom of the processing container in a rotatable and slidable manner, and / or the other end of the rod member is connected to the plate member in a rotatable and slidable manner, The lever member rotates in a direction corresponding to the deformation of the bottom of the processing container. Wherein, the vacuum processing device further comprises: an upper electrode disposed in the processing container so as to face the mounting table; and a film thickness sensor disposed around the upper electrode and capable of detecting the film thickness of the substrate within a predetermined detection range in a non-contact manner; The control method of the vacuum processing device includes the following steps: performing substrate processing on the substrate placed on the mounting table; controlling the plurality of actuators to move the base member until the substrate placed on the mounting table moves into a detection range of the film thickness sensor; The film thickness of the substrate is detected.

10. A method for controlling a vacuum processing device, the vacuum processing device comprising: a processing container capable of maintaining a vacuum atmosphere therein; a mounting table, which is provided in the processing container and is used to mount a substrate; a supporting member penetrating the hole in the bottom of the processing container to support the mounting table from below; a base member engaged with a portion of the support member located outside the processing container, the base member being movable integrally with the mounting table; as well as a plurality of actuators arranged in parallel between the bottom of the processing container and the base member, the plurality of actuators moving the base member relative to the bottom of the processing container to adjust the position and inclination of the mounting table; The vacuum processing device further comprises an absorption mechanism for absorbing deformation of the bottom of the processing container. The plurality of actuators are connected to the absorption mechanism, Wherein, the absorption mechanism has: a plate member; and a rod member having one end connected to the bottom of the processing container and the other end connected to the plate member, wherein the rod member suppresses transmission of the deformation to the plate member; The plurality of actuators are coupled to the plate member, wherein the one end of the rod member is connected to the bottom of the processing container in a rotatable and slidable manner, and / or the other end of the rod member is connected to the plate member in a rotatable and slidable manner, The lever member rotates in a direction corresponding to the deformation of the bottom of the processing container. The vacuum processing device further includes an upper electrode, which is arranged in the processing container to face the mounting table. The control method of the vacuum processing device includes the following steps: a distance measurement substrate is disposed on the mounting table, the distance measurement substrate being capable of measuring the distance between the mounting table and the upper electrode at a plurality of positions within a mounting surface of the mounting table; and Based on the measurement result of the distance measurement substrate, the plurality of actuators are controlled so that the base member is moved to a position where the distance is within a predetermined range at a plurality of positions on the mounting surface of the mounting table.

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