Apparatus and method for enhanced microelectronic device handling

Abstract

This patent application relates to apparatuses and methods for enhanced microelectronic device handling. An apparatus includes a pick arm having a pick surface configured for receiving a microelectronic device thereon, a drive for moving the pick arm and reorienting the pick surface in X, Y, and Z planes and about a horizontal and a vertical rotational axis, and a sensor device carried by the pick arm and configured to detect at least one of at least one magnitude of force or at least one location of force exerted between the pick surface and a structure with which the pick surface is in contact or between a structure and a microelectronic device carried on the pick surface. Related methods are also disclosed.

Description

[0001] CLAIM

[0002] This application claims the benefit of the filing date of U.S. Patent Application No. 16 / 930,144, “APPARATUS AND METHODS FOR ENHANCED MICROELECTRONIC DEVICE HANDLING,” filed July 15, 2020. TECHNICAL FIELD

[0003] Embodiments disclosed herein relate to apparatuses and methods for enhanced handling of microelectronic devices. More particularly, embodiments disclosed herein relate to methods and apparatuses for reducing the likelihood of damage to such devices during physical manipulation of the microelectronic devices. BACKGROUND

[0004] As the performance of electronic devices and systems increases, there is an associated demand to boost the performance of microelectronic components of such systems while maintaining or even shrinking the form factor (i.e., length, width, and height) of the microelectronic devices or assemblies. Such demands are often, but not exclusively, associated with mobile devices and high performance devices. To maintain or reduce the footprint and height of component assemblies in the form of microelectronic devices (e.g., semiconductor dies), three-dimensional (3D) assemblies of stacked components equipped with so-called through-silicon vias (TSVs) for vertical electrical (i.e., signal, power, ground / bias) communication between the stacked components have become more common, incorporating a reduction in component thickness along with the adoption of pre-fabricated dielectric films in the interconnects (i.e., spaces between the stacked components) to reduce interconnect thickness while increasing interconnect uniformity. Such dielectric films include, for example, so-called non-conductive films (NCFs) and wafer-level underfill (WLUF), such terms often used interchangeably. While effectively reducing the height of 3D microelectronic device assemblies, reducing the thickness of microelectronic devices such as semiconductor dies to approximately 50 pm or less increases the vulnerability of the devices and susceptibility to cracking under stress— particularly compressive (i.e., impact) and bending stress experienced during handling, such as during pick-and-place operations. Reducing interconnect thickness can also exacerbate the vulnerability of such ultra-thin microelectronic devices, as the thin dielectric material in the interconnects (e.g., NCFs) can no longer provide any cushioning effect or ability to accommodate particulate contaminants in the interconnects when, for example, the devices are stacked on another device to form a 3D assembly. Non-limiting examples of microelectronic device assemblies that include stacked microelectronic devices that can suffer from stress-induced cracking include assemblies of semiconductor memory dies, alone or in combination with other die functionality (e.g., logic), including so-called high-bandwidth memory (HBMx), hybrid memory cube (HMC), and chip-to-wafer (C2W) assemblies.

[0005] Accordingly, the present inventors have recognized that there is a need for enhanced apparatus and methods for handling microelectronic devices, including but not limited to, guided pick-and-place operations, including removal of microelectronic devices from a source and transport of the microelectronic devices for placement in an assembly. SUMMARY

[0006] Embodiments of the present disclosure include an apparatus for handling microelectronic devices, the apparatus comprising: a pick arm having a pick surface configured for receiving a microelectronic device thereon; a drive for moving the pick arm and reorienting the pick surface in X, Y, and Z planes and about a horizontal and a vertical rotational axis; and a sensor device carried by the pick arm and configured to detect at least one of at least one magnitude of force or at least one location of force exerted between the pick surface and a structure in contact with the pick surface or between a microelectronic device carried on the pick surface and a microelectronic device.

[0007] Embodiments of the present disclosure include a method comprising: moving a pick arm of a pick-and-place apparatus toward a singulated microelectronic device; initiating contact of the microelectronic device with a pick surface of the pick arm; and sensing, with a sensor device carried by the pick arm, at least one of one or more forces or one or more locations of force exerted between the pick surface and the contacted microelectronic device.

[0008] Embodiments of the present disclosure include an apparatus for handling microelectronic devices, the apparatus comprising: a bond head comprising a bond end having a bond end surface for receiving a microelectronic device thereon; and a sensor device comprising a plurality of sensors carried by the bond head and configured to detect at least one of at least one magnitude of force or at least one location of force exerted between the bond end surface and a microelectronic device in contact with the bond end surface, between a microelectronic device carried by the bond end surface and another microelectronic device, or between the bond end surface and a stack of microelectronic devices. BRIEF DESCRIPTION OF DRAWINGS

[0009] IN THE DRAWINGS Figure 1 is a photomicrograph showing a plurality of stacked semiconductor dies having cracks;

[0010] Figure 2 is a magnified photomicrograph showing crack intrusion by underfill material in a bond wire;

[0011] Figure 3 is a top view photograph of a semiconductor wafer map indicating cracked semiconductor dies as dark rectangles;

[0012] Figure 4is a schematic illustration of die cracking due to silicon particles in the wire when silicon particles of a size greater than the wire thickness are inserted between two stacked semiconductor dies;

[0013] Figure 5 is a schematic illustration of a wire between two adjacent stacked semiconductor dies on the left and an enlarged view of the circled post-to-pad arrangement on the left showing post non-wetting and resulting disconnection due to the presence of extraneous organic material O on the post-to-pad interface;

[0014] Figures 6A to 6D schematically depicts an example pick operation using a pick arm and pusher of a pick-and-place apparatus to remove a semiconductor die from a dicing tape;

[0015] Figure 7A and 7B schematically depicts an example semiconductor die transfer operation from a pick arm to a bond head's bond end;

[0016] Figure 8 schematically depicts a conventional pick arm in proximity to a semiconductor die on a dicing tape during a pick operation;

[0017] Figure 9A schematically depicts an embodiment of a pick arm equipped with a force sensor arrangement according to embodiments of the disclosure, the pick arm contacting a semiconductor die on a dicing tape, and Figure 9B is a schematic top view of a force sensor arrangement configured as an array of individual force sensors;

[0018] Figure 10A schematically illustrates another embodiment of a microelectronic device carried by a pick arm equipped with multiple force sensors contacting a bond end of a bond head in a non-parallel manner, and Figure 10B is a schematic top view of a force sensor arrangement configured as an array of individual force sensors;

[0019] Figures 11A to 11C schematically illustrates a top view of other arrangements of individual force sensors suitable for disposition in a pick arm according to embodiments of the disclosure;

[0020] Figure 12 is a schematic side view of a pick arm equipped with an acoustic crack sensor aligned with singulated microelectronic devices to be removed from a dicing tape by the pick arm;

[0021] Figure 13 is a flowchart of a method according to embodiments of the disclosure; and

[0022] Figure 14 is a schematic illustration of an example pick-and-place apparatus in conjunction with a thermal compression bonding apparatus, depicting removal of microelectronic devices from a dicing tape and transfer to a bond end of a bond head for stacking on a substrate. DETAILED DESCRIPTION

[0023] Embodiments of the present disclosure relate to methods and apparatus that enhance handling of microelectronic devices by reducing the magnitude and inconsistent application of stresses applied to such microelectronic devices during handling, e.g., during pick-and-place operations involving removal of microelectronic devices from a group of such devices by a pick arm and transfer of the removed devices to a bonding end of a bond head for placement on a substrate or stacked with other devices.

[0024] The following description provides specific details, such as material, compositions, methods, techniques, etc., in order to provide a thorough understanding of embodiments of the present disclosure. However, a person of ordinary skill in the art will understand and appreciate that the present disclosure can be practiced without necessarily being limited to these details. In some instances, well-known methods, procedures, components, and networks have not been described in detail in order to avoid unnecessarily obscuring aspects of the present disclosure.

[0025] The drawings presented herein are for illustrative purposes only and are not intended to be a precise view of any particular material, component, structure, device, or system. It is contemplated that the shapes depicted in the drawings will vary from, for example, manufacturing techniques and / or tolerances. Therefore, embodiments described herein are not to be understood as limited to the particular shapes or regions as illustrated but include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as box-shaped can have rough and / or nonlinear features, and a region illustrated or described as circular can include some rough and / or linear features. Moreover, acute angles between illustrated surfaces can be rounded, and vice versa. Thus, the regions illustrated in the drawings are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and do not limit the scope of the present claims. The various drawings are not necessarily drawn to scale.

[0026] Embodiments can be described in terms of processes outlined in flowcharts, flow diagrams, structural diagrams, or block diagrams. Although a flowchart can describe operations as a sequential process, many of the operations can be performed in parallel, concurrently, or substantially concurrently. In addition, the order of the operations can be re-arranged. A process can correspond to a method, a thread, a function, a procedure, a subroutine, a subroutine, other structure, or combinations thereof. Moreover, the methods disclosed herein can be implemented in hardware, software, or both. If implemented in software, the functions can be stored on or transmitted over as one or more instructions or code on a computer-readable medium. Computer-readable media include both computer storage media and communication media including any medium that facilitates transfer of a computer program from one place to another. In this specification and for convenience, identical or similar reference numerals can be used to identify common and identical or similar elements across the various figures.

[0027] According to the background art, when a pusher under the film carrying the dies moves the dies upward to meet a pick arm of a pick-and-place device, microelectronic devices such as semiconductor dies can crack when the pick arm contacts the picked dies supported from a film frame (i.e., a dicing tape). Additionally, when the picked dies are transferred by the pick arm to a receiving assembly, such as a bonding end of a bond head used in a thermal compression bonding device, the contact on the dies from the movement of the pick arm toward the bonding end can cause cracking. In either case, an impact can result from an incorrect excess travel of the pick arm toward the die or bonding end or an angular misalignment (i.e., not coplanar, not parallel orientation) of a pick surface of the pick arm relative to a die surface or a bonding end surface such that the two surfaces are not parallel when the pick arm approaches the die or bonding end. If excess travel occurs, the amount of pick surface contacting the die or die contacting the bonding end surface can initiate cracking. If misalignment occurs, the point contact of an edge of the pick arm with the die surface or the die surface with the bonding end surface causes an increase in force per unit area on the die by orders of magnitude, which initiates cracking.

[0028] In order to better highlight the problems mentioned above, Figure 14An example of a pick-and-place apparatus 100 is illustrated schematically in connection with an example of a thermal compression bonding apparatus 200, depicting removal of microelectronic devices (e.g., semiconductor dies) S from singulated semiconductor wafers W on a dicing tape 102, with active surfaces A of the semiconductor dies facing upward and conductive elements (not shown) protruding from the active surfaces A in the NCF. Next, transfer to bonding tips 204 of bonding heads 202 of the thermal compression bonding apparatus 200 is effected for re-orientation and stacking in a “flip-chip” manner on a substrate (e.g., a target semiconductor wafer including an array of die locations), with the active surfaces A of the semiconductor dies S facing downward toward the substrate. The pick-and-place apparatus 100 includes a pick arm 104, movable in X, Y, and Z directions and rotatable about a lateral axis LA and about a longitudinal axis LO, by way of drive motors 120X, 120Y, 120Z equipped with linear encoders and drive motors 120LA and 120LO equipped with rotary encoders, controlled by a programmed controller 122 including one or more microprocessors 124 in communication with a memory 126 storing operating programs and in closed loop communication with an optical sensor system 128 to align the pick arm 104 with semiconductor dies S to be removed from the dicing tape 102 by the pick arm 104 for transfer to the bonding tip surfaces 206. Suppliers of such apparatuses include, but are not limited to, ASM International of Almere, The Netherlands and Shinkawa, Ltd. Of Tokyo, Japan.

[0029] As Figure 14As shown in the middle, the semiconductor dies S singulated from the semiconductor wafer W are supported on and adhered to the dicing tape 102. As is conventional, the dicing tape 102, which can be a polymeric film coated with a UV release adhesive and supported along the periphery by a so-called film frame 103, supports the semiconductor wafer W during a so-called "singulation" operation in which individual semiconductor die locations on the wafer are separated, for example, by a diamond-coated dicing saw, after which the dicing tape 102 is stretched to separate the singulated semiconductor dies S for removal from the dicing tape 102. At this point, the semiconductor dies S are ready to be picked from the dicing tape 102, and the pick arm 104 of the pick-and-place apparatus 100 is suspended above and optically aligned with the location of a semiconductor die S using the optical sensor system 128. At this point, the pick arm 104 has been quickly moved to a position vertically above and in alignment with the semiconductor die S on the lateral X, Y plane, with the pick surface 106 parallel to the active surface A. Once aligned over the semiconductor die S, the pick arm 104 is quickly lowered vertically until a predetermined, preprogrammed standoff distance, for example, on the order of 100 pm and up to about 500 pm, is reached between the pick surface 106 of the pick arm 104 and the active surface A of the semiconductor die S, after which the travel of the pick arm 104 is significantly slowed, enabling "soft touch" travel to contact the NCF on the active surface A. Between the time the pick arm 104 slows and comes into contact with the active surface A, the pusher 108 is moved upward against the dicing tape 102, as shown by the vertical arrow E, and moves in synchronization with the pick arm 104, and presents the semiconductor die S to the pick surface 106, which is equipped with vacuum ports 110 that are in selective communication with a vacuum source 110VS and are actuated to pull the semiconductor die S upward and away from the dicing tape 102. Ideally, the pick arm 104 and the pusher 108 move in unison to minimize, i.e., substantially eliminate, contact forces between the pick surface 106 and the pusher 108, and at the same time substantially prevent any gaps between the pick arm 104 and the NCF on the active surface A. However, the pick arm 104 can overtravel, and thus the pick surface 106 can press the semiconductor die S too hard, inducing stress microcracks or even cracks due to at least one of the applied impact and excess force. Whether or not overtravel occurs, the semiconductor die S is subsequently removed for further handling and transfer by the pick arm 104 to the bond pad surface 206 of the bond pad 204 for placement on a substrate or another semiconductor die S.

[0030] Referring again to Figure 14to the bonding head 202 of the thermal compression bonding apparatus 200. The pick-up arm 104 carrying the semiconductor die S through the active surface A has been raised, moved in the X, Y, and Z directions, and rotated about the lateral axis LA and the longitudinal axis LO as needed to present the backside surface B of the semiconductor die S to the bonding end surface of the bonding end 204 of the bonding head 202 of the thermal compression bonding apparatus 200. As with the pick-up operation, the pick-up arm 104 is moved quickly until a preprogrammed standoff distance, e.g., about 100 pm, between the backside surface B and the bonding end surface 206 is achieved, after which the pick-up arm is moved slowly toward the bonding end 204, but not in contact therewith, the bonding end being at an elevated temperature provided by the resistive heater 208. The remaining standoff distance substantially thermally isolates the semiconductor die S from the bonding end, otherwise this can cause the NCF to become tacky and stick to the pick-up surface 106, or begin to cure prematurely before being stacked on a target substrate or another semiconductor die, compromising bond line integrity. Additionally, even when the apparatus is properly calibrated, as with the pick-up operation, the pick-up surface 106 can not be perfectly coplanar with the bonding end surface 206, which can result in the backside surface B of the semiconductor die S coming into contact with the bonding end surface 206 without the standoff distance. When the backside surface B is moved into close proximity, e.g., less than about 150 pm to about 200 pm, with the bonding end surface 206, the vacuum port 210 in the bonding end surface is actuated and the vacuum port 110 in the pick-up surface 106 is de-actuated to transfer the semiconductor die S through its backside B to the bonding end surface 206 in a contactless manner in response to the air pressure differential. In some cases, the vacuum in the pick-up surface 106 to the vacuum port 110 is reversed to a small positive pressure in a blow-off procedure, and the semiconductor die S is "puffed" against the bonding end surface 206 for non-contact transfer. In an ideal situation, the pick-up surface 106 has been properly calibrated to be coplanar with the bonding end surface 206 at the desired distance when maneuvered into proximity with the bonding head 202, so that the transfer of the semiconductor die S is achieved with no contact force distributed on the backside surface B of the semiconductor die S at worst. However, over repeated use, the movement of the pick-up arm 104, the bonding end 204, or both can fail to calibrate, as a result of which the pick-up surface 106, and thus the backside surface B of the semiconductor die S, is presented at an acute angle to the bonding end surface 206, resulting in edge contact of the backside surface B with the bonding end surface 206, causing edge cracking on the backside surface B. Figure 7B With respect to the vertical distance D shown and described, variations in the coplanarity of the pick-up surface 106 to the bonding end surface 206 can cause the edges of the backside surface B of the semiconductor die S to come into inadvertent contact with the bonding end surface 206 without the standoff distance. When the backside surface B is moved into close proximity, e.g., less than about 150 pm to about 200 pm, with the bonding end surface 206, the vacuum port 210 in the bonding end surface is actuated and the vacuum port 110 in the pick-up surface 106 is de-actuated to transfer the semiconductor die S through its backside B to the bonding end surface 206 in a contactless manner in response to the air pressure differential. In some cases, the vacuum in the pick-up surface 106 to the vacuum port 110 is reversed to a small positive pressure in a blow-off procedure, and the semiconductor die S is "puffed" against the bonding end surface 206 for non-contact transfer. In an ideal situation, the pick-up surface 106 has been properly calibrated to be coplanar with the bonding end surface 206 at the desired distance when maneuvered into proximity with the bonding head 202, so that the transfer of the semiconductor die S is achieved with no contact force distributed on the backside surface B of the semiconductor die S at worst. However, over repeated use, the movement of the pick-up arm 104, the bonding end 204, or both can fail to calibrate, as a result of which the pick-up surface 106, and thus the backside surface B of the semiconductor die S, is presented at an acute angle to the bonding end surface 206, resulting in edge contact of the backside surface B with the bonding end surface 206, causing edge cracking on the backside surface B.

[0031] While die microcracks and cracking have always been a problem, as noted above, they are exacerbated by the continued reduction in die and bonding wire thickness. In terms of reduced yield, significant examples of die cracking due to handling issues become apparent as die thicknesses reach approximately 60 μm to approximately 65 μm, further increasing in both number and severity as die thicknesses have reached approximately 50 μm, and are expected to be further aggravated as die thicknesses reach approximately 30 μm or less in response to industry demands for increasingly more microelectronic devices stacked at given form factor heights.

[0032] To further aid the reader's understanding of the embodiments of this disclosure, the term "NCF" is used in practice and for convenience. An NCF-formed dielectric film is adhered to the functional surface of a bulk semiconductor substrate, which is generally in the form of a wafer, such as a silicon wafer on which integrated circuits have been fabricated. While supported on a dicing tape on a film frame, the wafer is subsequently diced, for example, by diamond-coated dicing blades along so-called "tracks" between adjacent semiconductor die locations on the wafer to provide individual semiconductor dies, each semiconductor die having an NCF on its functional surface. Although the NCF may be laminated to a protective film during transport and handling, once the NCF is laminated to the functional surface of the wafer, the protective film is peeled off before the wafer dicing to individual semiconductor dies occurs, thus exposing the currently uncovered exposed surface of the NCF to contamination during dicing and during subsequent die handling of adjacent dies, thereby resulting in residual contaminants on the NCF from dicing.

[0033] It has been found that contaminant particles generated during the single-step process and incidentally deposited on the exposed surfaces of NCF can cause a significant reduction in wafer yield. These particles can be inorganic, such as silicon debris, or organic, such as NCF residue, dicing tape residue, or particulate matter from other sources within the cleanroom environment. Silicon particles can cause die cracking, for example, when the particle size exceeds the bonding wire thickness, while organic particles, if located on conductive pillars such as solder caps or conductive elements of under-bump metallization (UBM) for solder bumps, can cause solder unwetting, thereby impairing electrical connectivity between stacked dies.

[0034] The picture Figure 1 These are micrographs showing multiple stacked semiconductor dies with cracks. Figure 2 These are magnified micrographs showing crack intrusion caused by the adhesive material in the bonding line, and Figure 3 It is a photograph of a wafer image in which a cracked semiconductor die is indicated by a dark rectangle. Figure 4 This is a schematic diagram of a die crack caused by silicon particles in the bonding wire when silicon particles larger than the thickness of the bonding wire are inserted between two stacked semiconductor dies. Figure 5The left side is a schematic of two adjacent bondwires between stacked semiconductor dies, and the right side is an enlarged view of the circled post-to-pad arrangement on the left, showing post non-wetting and resulting disconnection due to the presence of extraneous organic material O on the post-to-pad interface.

[0035] It has been determined that the aforementioned types of particulate contamination on the exposed NCF surface cause a significant reduction in die yield, particularly where blade dicing (i.e., singulation) processes are used, which can generate a considerable number of particulate debris. Notably, the yield of dies contaminated with NCF progressively gets worse starting after wafer debonding from the carrier wafer, after dicing of the wafer (i.e., post-dicing), after lamination of the wafer onto the film frame supporting the dicing tape, and during post-dicing handling. If a 60 pm contaminant particle size is used as a baseline to determine damaged dies (i.e., die kill), the yield progressively decreases from almost 100% after debonding to almost 90% after dicing, with about half of the dies of the wafer being damaged by silicon (i.e., solid portion) particles and about half by organic (i.e., transparent portion) particles. However, if a 20 pm contaminant particle size is used as a baseline, the yield plummets from over 95% after debonding to less than 75% after dicing, again, with about half of the dies of the wafer being damaged by silicon (i.e., solid portion) particles and about half by organic (i.e., transparent portion) particles. Since NCFs of common thickness are about 15 pm, and NCFs of thickness about 10 pm are contemplated for use, it can be readily appreciated that even small contaminant particles of about 15 pm or less in size can significantly increase die kill. In addition, as the industry moves toward less than about 5 pm so-called “zero bondwire thickness” using plasma treated silicon oxide or organic material bonding stacks of extremely thin (e.g., about 30 pm) adjacent microelectronic devices that are electrically connected by aligned Cu-to-Cu conductive elements of the adjacent microelectronic devices, even small contaminant particles on the surface of the microelectronic devices (e.g., the active surface of a semiconductor die) can significantly reduce the yield of these fragile devices.

[0036] The significance of the contaminant to yield loss during pick-and-place operations can be described as facilitating stress concentration on the surface of the semiconductor die by, for example, limiting the contact of the surface of the pick arm to one or more contaminant particles that are larger (e.g., in diameter) than the thickness of the NCF and the height of the conductive elements, such as copper posts that protrude from the active surface and within the NCF on the active surface of the die. Thus, instead of spreading the pick arm contact force over the entire NCF and conductive elements and reducing the force per unit area on the active surface of the die, all of the force can be concentrated in just a few discrete points on the active surface where the contaminant particles are located and protrude above the NCF.

[0037] Additionally, pickup arm non-particulate contamination due to NCF residue remaining on the pickup surface can cause force distribution issues during removal of the semiconductor die from the dicing tape, as dicing tape residue can accumulate on the backside of the semiconductor die when it is transferred from the pickup arm to the bond end.

[0038] Reference is now made to the drawings, Figures 6A to 6D , and further to Figure 14 to illustrate, in schematic form, an example pick operation using the pick arm and pusher of the handling apparatus 100 to remove a semiconductor die S configured with an active surface A having conductive elements (e.g., metal pillars) for stacking and thermocompression bonding from a dicing tape. Reference is made to Figure 6A , a microelectronic device in the form of a semiconductor die S is supported on and adhered to the dicing tape 102 of the handling apparatus 100. As is conventional, the dicing tape 102 supports singulated semiconductor dies S for removal from the dicing tape 102. The pick arm 104 of the handling apparatus 100 is suspended above and in optical alignment with the location of the semiconductor die S. As previously described, the pick arm 104 is movable in the X, Y and Z directions and rotatable about the lateral and longitudinal axes by encoder-equipped drive motors controlled by a programmed controller. Once aligned over the semiconductor die S, the pick arm 104 is rapidly lowered vertically, as shown in Figure 6B , until a predetermined preprogrammed standoff distance, e.g., 100 pm as depicted, is achieved between the pickup surface 106 of the pick arm 104 and the active surface A of the semiconductor die S, after which the travel of the pick arm 104 is significantly slowed to achieve a“soft touch” travel to contact the NCF on the active surface A. Between the time the pick arm 104 slows and comes into contact with the active surface A, the pusher 108 is moved upward against the dicing tape 102 as shown by the vertical arrow E in synchronization with the pick arm 104, and presents the semiconductor die S to the pickup surface 106 equipped with vacuum ports 110 that are actuated to pull the semiconductor die S upward and away from the dicing tape 102. Ideally, due to the synchronization, the contact force of the pick arm 104 is minimized to no more than about 50 to 150 grams of contact force and desirably much less. However, due to a failure of the pick arm 104 and / or pusher 108 to calibrate, or incorrect or mismatched encoder values controlling the motion as shown in the 6C drawing, the pick arm 104 can overtravel, and thus the pickup surface 106 can overpress the semiconductor die S, inducing stress microcracks or even cracks C due to at least one of the applied impact and excess force, the damaged semiconductor die S is then removed from the dicing tape 102 by the pick arm 104 for further handling as shown in Figure 6DSimilarly, if the pick-up surface 106 is not parallel to the active surface A, or misaligned with the semiconductor die S rotation, edge contact of the pick-up surface 106 with the active surface A can occur. A lack of co-planarity of the pick-up surface 106 to the active surface A by as little as about 20 pm can result in damage to the semiconductor die S. Furthermore, the presence of contaminants on the active surface A in the form of inorganic or organic particles from the singulation process or NCF residue on the pick-up surface 106 from a previous device pick-up can result in localized damage forces on the active surface A. Unfortunately, cracks and micro-cracks C are not easily detectable during handling of the semiconductor die, and their presence can not be evident until assembly with other semiconductor dies, and subsequent normal force application by a bond head during thermal compression bonding of the die stack can also exacerbate micro-cracks into cracked dies, as Figure 1 illustrated in FIG. 6.

[0039] Referring now to the Figure 7A and 7B and further to Figure 14 an example transfer operation from the pick-up arm 104 to the bond head 202 of the thermal compression bonding apparatus 200 is illustrated in schematic form. As Figure 7A illustrated in FIG. 6, the pick-up arm 104 carrying the semiconductor die S by the active surface A has been moved in the X, Y, and Z directions as needed and rotated about the lateral and longitudinal axes to present the backside surface B to the bond end surface 206 of the bond end 204 of the bond head 202 of the thermal compression bonding apparatus 200. The pick-up arm 104 is moved rapidly until a pre-programmed standoff distance, after which the pick-up arm 104 is moved more gently toward the bond end 204 but not in contact therewith. When the backside surface B is in close proximity to the bond end surface 206, vacuum ports 210 in the bond end surface are actuated and vacuum ports 110 in the pick-up surface 106 are de-actuated to transfer the semiconductor die S to the bond end 204 in a non-contact manner in response to a pressure differential, while the semiconductor die S is thermally isolated from the bond end 204 for as long as possible. As previously described, the vacuum in the vacuum ports 110 in the pick-up surface 106 can be reversed to a small positive pressure, and the semiconductor die S "puffs up" against the bond end surface 206 for non-contact transfer. As Figure 7A illustrated in FIG. 6, in the ideal case, the pick-up surface 106 has been properly aligned to be parallel with the bond end surface 206 when maneuvered into proximity with the bond head 202, such that transfer of the semiconductor die S is achieved with no contact forces distributed on the backside surface B of the semiconductor die S. However, as Figure 7BAs depicted in the middle, during reuse, movement of the pick arm 104 can fail to calibrate, with the result that the pick surface 106, and thus the backside surface of the semiconductor die S, presents at an acute angle (i.e., is “tilted”) to the bond pad surface 206, resulting in edge contact EC of the backside surface B with the edge of the bond pad surface 206, causing edge cracking on the backside surface B. If the pick surface 106 is rotationally oriented to match the bond pad surface 206, the edge contact EC can be along a line, or if rotationally misaligned and tilted in a plane perpendicular to the longitudinal axis LO, the edge contact can include a point contact of a corner of the backside surface B of the semiconductor die S. It has been found that a slight angular displacement D of the edge of the backside surface B from parallel between the backside surface B and the bond pad surface 206 of about 75 pm can cause micro-cracking or cracking in the semiconductor die S from such edge contact. Similarly, the presence of contaminants on the active surface A in the form of inorganic or organic particles from singulation processes or NCF residue on the pick surface 106 from prior device picks can cause a concentration of damaging forces on the active surface A and edge contact on the backside surface B from non-parallel orientation of the backside surface B.

[0040] Reference is now made to Figure 8illustrates an example pick arm 104 approaching a semiconductor die S on a dicing tape 102. As shown, the pick arm 104 can be equipped with a die-specific tooling 112 configured to accommodate a semiconductor die of a certain size and shape to be picked from a particular wafer, a vacuum port 110 of the tooling 112 leading to a pick surface 106 is operably coupled to a vacuum line (not shown) that extends to the pick arm 104 and through the pick arm to a vacuum source (not shown). As can be seen, ideally, the vacuum port 110 can be placed directly over an active surface A of the semiconductor die S to draw the NCF-covered active surface A into contact with the pick surface 106. Conventionally, no proximity sensing is performed to control and stop the pick arm 104 travel toward the semiconductor die S, nor is there any mechanism to control or sense non-parallel orientation of the pick surface 106 to the active surface A of the semiconductor die. Thus, despite periodic calibration of pick arm movement, for picking of tens of semiconductor dies for a given wafer, micro-cracking of the dies due to pick arm over-travel and over-pressing or angular misalignment can go undetected. As previously noted, the magnitude of micro-cracking, and further tendency to swell and expand, the resulting larger cracks damage can not manifest until the defective dies are stacked and bonded in an assembly. Even if the assembly passes testing, the damage can induce infant mortality of the assembly containing, for example, a stack (e.g., eight, twelve, sixteen, thirty-two) of DRAM semiconductor dies. As noted above, cracking can also be induced by the presence of a particulate contaminant P on the NCF on the active surface A of the semiconductor die S, especially when the size (e.g., diameter) of the particulate contaminant P is greater than the thickness of the NCF. In such cases, even if the pick surface 106 is parallel to the active surface A and the movement of the pick arm 104 is properly calibrated and within tolerance, the presence of such particulate contaminant P can create one or more locations of point contact and force concentration between the pick surface 106 and the active surface A to the NCF N of the semiconductor die S, even if the pick surface 106 is not in physical contact with the active surface A, concentrating the movement force of the pick arm 104 causing damage to the integrated circuitry of the active surface A. Similar problems can occur if conductive elements (e.g., metal pillars) protruding from the active surface A have uneven heights.

[0041] Reference is now made to Figure 9A illustrates an embodiment of a pick arm 104' equipped with a force sensor arrangement 114, including a single force sensor 114s that can also be described as a sensor element, the pick arm contacting a semiconductor die S on a dicing tape 102. Figure 9B is illustratively a force sensor arrangement 114 configured as an array 116 of individual force sensors 114i carried by the pick arm 104', the array can also be described as an array of sensor elements. In Figure 9AIn, with Figure 8 Common components share the same reference numerals. However, except... Figure 8 In addition to the components of the pickup arm 104', the pickup arm 104' also includes a force sensor device 114 carried by the pickup arm 104' and, by way of example, inserted between the pickup arm 104' and the tooling 112. As indicated, the force sensor device 114 may include, for example... Figure 9A The single force sensor 114s depicted in the text or such Figure 9B The array 116 of individual force sensors 114i is depicted in the figure.

[0042] If a single force sensor 114s is used, then the force sensor 114s ( Figure 9A) can be, for example, a spring-loaded sensor configured to estimate force from spring constant and displacement, or a load cell. An example of the latter is the FS19 compression load cell provided by StrainSense Limited of Milton Keynes, United Kingdom. Such load cell methods allow detection of over-pressing of the pick-up arm 104', whether due to uniform but overly firm contact of the pick-up surface 106 with the NCF on the active surface of the semiconductor die S, or due to point contact of the pick-up surface 106 with a particulate contaminant P having a size greater than the thickness of the NCF (not shown). Thus, an over-pressing signal generated by the force sensor 114s can be used to signal the controller 122 of the pick-and-place apparatus to divert the picked die for inspection, remediation and re-qualification if possible, or rejection rather than transfer to the bonding end 204 for stacking and thermocompression bonding. However, if the pick-up surface 106 with a single force sensor 114s is not parallel to the active surface A of the semiconductor die S, misleading readings can result. Similarly, depending on the type of force sensor used, the presence of a particulate contaminant P can result in false force readings or reading failure. However, to overcome such issues and detect excessive travel and over-pressing as well as impacts from angular misalignment of the pick-up arm, the non-directional piezoelectric shock sensor design disclosed in U.S. Patent 5,811,910 can be used as the force sensor 114s. Another suitable force sensor configuration is the capacitive MEMS force sensor formed on a silicon membrane disclosed in U.S. Patent 8,984,966. Another force sensor configuration that provides three-axis force sensing in a single force sensor is the three-axis MEMS piezoelectric load sensor disclosed in U.S. Patent 9,261,423. Yet another mechanism described in the context of sensing position of a piezoelectric actuator in U.S. Patent 9,791,491 can be adapted to sense the position of the pick-up arm pick-up surface and thus its linear and angular displacement and corresponding load. Other suitable force sensors are available from TE Connectivity of Berwyn, PA and Futek Advanced Sensor Technology of Irvine, CA.

[0043] The array 116 of individual force sensors 114i or other arrangements provide the ability for more sophisticated identification and qualification of artifact events indicative of potential damage to the semiconductor die S. As disclosed in U.S. Patent 9,362,481, individual force sensors 114i can be fabricated as separate elements and combined, or as individual segments of larger material in a single structure, which describes the use of piezoelectric polymer films that can be selectively metalized at discrete areas to produce an array of sensors, with each discrete area acting as a separate sensor. In addition, the above-referenced U.S. Patent 9,261,423 discloses the use of a combination of, for example, four, of the tri-axial MEMS piezoelectric load sensors in a rectangular configuration and operating in parallel. Further, the load sensors can be fabricated in an array or in a spaced-apart “constellation” configuration. Such an arrangement can detect loads (i.e., forces and moments) in six axes. Yet further, U.S. Patent 9,902,611 discloses a MEMS force sensor using multiple piezoresistive sensor elements.

[0044] Referring now to Figure 10A and 10B , another embodiment of a semiconductor die S carried by a pick-up arm 104" equipped with multiple force sensors contacting the bond head 202 in a non-planar manner is schematically illustrated, and Figure 10B is a schematically illustrated response of the array 116 of force sensors 114i of the pick-up arm 104" to the non-planar contact.

[0045] As previously in Figure 7BAs depicted in FIG. 1, the pick-up arm 104 is equipped with a force sensor 114i that is configured to detect the force F applied by the pick-up arm 104 to the pick-up surface 106. The force sensor 114i is configured to generate a signal indicative of the force F applied by the pick-up arm 104 to the pick-up surface 106. The signal generated by the force sensor 114i is transmitted to the controller 122 of the pick-and-place machine 100. The controller 122 is configured to receive the signal generated by the force sensor 114i and to determine whether the force F applied by the pick-up arm 104 to the pick-up surface 106 is within a predetermined range of acceptable forces. If the force F is within the predetermined range of acceptable forces, the pick-up arm 104 is allowed to continue its movement. If the force F is outside the predetermined range of acceptable forces, the pick-up arm 104 is stopped and the semiconductor die S is transferred for inspection, requalification, and, if possible, remediation, or discarded.

[0046] Reference is now made to Figures 11A to 11C , illustrating further exemplary arrangements of force sensors including a plurality of individual force sensors 114i for a pick-up arm. As Figure 11A depicted in FIG. 2, one contemplated force sensor arrangement positions four individual force sensors 114i at the corners of the sensor device, providing the ability to detect and signal an over-press condition as well as a non-planar (i.e., non-flat) orientation of the pick-up surface or the presence of contaminants on a substantial portion of the microelectronic device surface. Figure 11B depicted in FIG. 3, another contemplated arrangement positions a central individual force sensor 114i and a frame of surrounding individual force sensors 114i. Figure 11C depicted in FIG. 4, another contemplated arrangement positions a central individual force sensor 114i and a frame of surrounding individual force sensors 114i.

[0047] In any of the foregoing embodiments, one or more signals indicative of one or more forces, one or more locations of forces, or both, applied by the pick-up arm 104' or 104" directly or through a microelectronic device carried on the pick-up surface 106 can be generated by the sensor device 114 carried by the pick-up arm, transmitted to the controller 122 of the pick-and-place machine (see Figure 14and processed by the microprocessor 124 of the controller 122 to determine if damage to the microelectronic device is likely to have occurred. If so, the controller 122 stops the pick arm 104' or 104" from potentially further damaging movement and transfers the microelectronic device from its intended first destination (e.g., a bond pad of a thermal compression bonding apparatus) to a second destination for inspection, requalification, remediation if possible, or disposal prior to or after an attempt to transfer to the bond pad 204.

[0048] Referring now to Figure 12 , an embodiment of a pick arm 104"' equipped with one or more acoustic sensors 140 is schematically illustrated. As shown, the die-specific tooling 112 can optionally incorporate a sound-transmitting medium (e.g., acoustic gel) or waveguide 142 aligned with each of the acoustic sensors 140 to facilitate transmission of sounds indicative of cracking of a semiconductor die and isolate the acoustic sensors 140 from artifacts associated with the vacuum of a pick operation. U.S. Patent 3,924,456 US and U.S. Patent Publication 2014 / 0208850 Al disclose acoustic sensors that can be incorporated into the pick arm 104"' to detect initiation of cracking during pick up and transfer of a microelectronic device to another apparatus.

[0049] As Figure 13 depicted by the flowchart of FIG. 1, embodiments of the present disclosure can be implemented in their broadest sense by a method 300 including the acts of picking up a microelectronic device from a support by a pick arm of a pick and place apparatus 302, sensing at least one of one or more forces and one or more locations of the forces exerted by a pick surface of the pick arm on the microelectronic device 304, generating one or more signals representative of at least one of a force value and a location of contact between the pick surface and the microelectronic device 306, transferring the microelectronic device to a bond pad surface of a bond pad 308, sensing at least one of one or more forces and one or more locations of the forces exerted by the microelectronic device on the bond pad surface 310, and generating one or more signals representative of at least one of a force value and a location of contact between the microelectronic device and the bond pad surface 312.

[0050] To further elaborate on the operation of embodiments of the present disclosure, the use of sensor devices including one or more sensors carried by a pick arm of a pick and place apparatus provides many opportunities to determine the likelihood of damage to each microelectronic device as it is handled (e.g., from picking up the device from a cut tape on a film frame to transferring the microelectronic device to a bond pad surface of a thermal compression bonding apparatus for placement on a target substrate by the bond pad or another device in a stack of devices).

[0051] In particular, the presence of a sensor device configured in accordance with embodiments of the present disclosure and in communication with a controller of a pick-and-place apparatus allows the controller to stop movement of the pick arm and pick surface toward a surface of a structure or of a microelectronic device carried by the pick arm toward another microelectronic device after the sensor device generates one or more signals indicative of a magnitude and location of a force applied to the microelectronic device associated with pick arm movement, and optionally, to cause the pick arm to move the microelectronic device to a second destination rather than a first intended destination for inspection, requalification, remediation, or abandonment in the event that force-induced microcracking or cracking of the device renders the device unrepairable. This capability significantly reduces the potential number of microelectronic devices picked from a wafer that are damaged as a result of pick or transfer operations due to pick arm overtravel and overpressing, non-parallel orientation of a pick surface of the pick arm or a surface of a microelectronic device carried by the pick arm and a facing surface of another structure, or rotational misalignment of the pick surface and a microelectronic device being picked or of a microelectronic device carried by the pick arm and a surface of a landing. In addition, contaminants on a surface of a microelectronic device (i.e., NCF), on a pick surface, or on a landing surface can result in point contact and force concentration. Similarly, contamination in the form of NCF residue adhered to a pick surface or a landing surface can result in misalignment (i.e., non-parallel orientation) between facing surfaces, causing damaging edge contact of a microelectronic device.

[0052] By way of non-limiting example only, one or more conditions during operation of the pick arm can be sensed by the sensor device sensing one or more forces, positions, or both associated with movement of the pick arm, in connection with contact between the surfaces, one or more signals generated by the sensor device in response to the sensed conditions. The pick-and-place apparatus controller determines a likelihood of device damage in response to the signals, such that operation of the pick arm can be stopped, a cause or causes of the problem determined, and pick-and-place operations with respect to other microelectronic devices resumed and the potentially damaged microelectronic device inspected, requalified, remediated, or discarded after the problem or problems are resolved. Such conditions include a contact force between the pick surface and the microelectronic device during a pick operation exceeding a threshold magnitude, a single point of contact between the pick surface and the microelectronic device, a number of points of contact between the pick surface and the microelectronic device being at or below a certain number, the points of contact between the pick surface and the microelectronic device being along a line, less than about 90% of the surface area of the pick surface being in contact with the microelectronic device, a non-parallel orientation of the pick surface relative to the facing microelectronic device surface being above a threshold acute angle, or a rotational misalignment of the pick arm relative to the microelectronic device. Such conditions also include a contact force between the bond head surface and the microelectronic device surface during transfer of the microelectronic device from the pick arm to the bond head exceeding a threshold magnitude, a single point of contact between the bond head surface and the microelectronic device surface, a number of points of contact between the bond head surface and the microelectronic device surface being at or below a certain number, the points of contact between the bond head surface and the microelectronic device surface being along a line, less than about 90% of the surface area of the microelectronic device surface being in contact with the bond head surface, a non-parallel orientation of the microelectronic device surface relative to the bond head surface being above a threshold acute angle, or a rotational misalignment of the pick arm and thus the microelectronic device carried thereby relative to the bond head surface.

[0053] As a further elaboration of the scope of the embodiments with respect to the present disclosure, while the incorporation of force sensor devices and force sensors have been discussed and illustrated in the context of application to pick arms, the present disclosure is not so limited. For example, other arrangements of individual force sensors 114i or similar force sensor devices in the form of array 116 can be carried by the bond head's bond head (see Figure 10A) to detect the magnitude and location of forces experienced by microelectronic devices carried by the bond tip surface during placement (e.g., stacking) on another microelectronic device or substrate or during application of force by the bond head to effect inter-engagement of stacked microelectronic devices. Such applications can be particularly suitable for, but not limited to, hybrid bonding of stacks of semiconductor dies. Such bonding techniques can be used to achieve near zero bond line thickness and utilize inorganic (e.g., silicon oxide) or organic dielectric material in the bond line between adjacent dies to bond discrete conductive (e.g., copper) elements in the bond line for conductive paths between components. Hybrid bonding operations can be performed with low bond head force and at or near ambient temperature, and incorporation of a force sensor arrangement can be used to detect excessive force, uneven application of force, or both during hybrid bonding operations to identify potentially defective multi-die devices for further inspection, remediation, or rejection.

[0054] As used herein, the terms "comprises," "comprising," "includes," "including," "has," "having," "contains," "containing," "characterized by," and grammatical equivalents thereof are inclusive or open-ended terms that do not exclude additional, unrecited elements or method acts, and also encompass "consisting of" and "consisting essentially of" and grammatical equivalents thereof.

[0055] As used herein, the term "may" with respect to a material, structure, feature, or method act indicates that such material, structure, feature, or method act is contemplated, and preferred that the term be interpreted "may" over the more restrictive term "will" or "must" to avoid any implication of a limitation on other compatible materials, structures, features, and methods that can be used along with or alternatively to the one described herein.

[0056] As used herein, the terms "longitudinal," "vertical," "lateral," and "horizontal" refer to the principal plane of a substrate (e.g., base material, base structure, base configuration, etc.) in or on which one or more structures and / or features are formed, and are not necessarily defined by the earth's gravitational field. A "lateral" or "horizontal" direction is a direction substantially parallel to the principal plane of the substrate, while a "longitudinal" or "vertical" direction is a direction substantially perpendicular to the principal plane of the substrate. The principal plane of the substrate is defined by a surface of the substrate having a relatively large area compared to other surfaces of the substrate.

[0057] As used herein, spatially relative terms, such as "beneath", "below", "lower", "bottom", "above", "upper", "top", "front", "rear", "left", "right", and the like, can be used for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. Unless otherwise specified, the spatially relative terms are intended to encompass different orientations of the materials in addition to the orientation depicted in the drawings. For example, if a material in the figures is inverted, then an element described as being on or over of other element or feature would then be oriented under the other element or feature. Thus, the term "on" can encompass both a right orientation and a reverse orientation depending on the context in which it is used. The materials can be otherwise oriented (e.g., rotated 90 degrees, inverted, flipped) and the spatially relative descriptions used herein interpreted accordingly.

[0058] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0059] As used herein, the terms "configured" and "configuration" refer to the size, shape, material composition, orientation, and arrangement of one or more of the structures and the devices that facilitate operation of the one or more of the structures and the devices in a predetermined manner.

[0060] As used herein, the term "substantially" with respect to a given parameter, property, or condition means and includes the degree of such given parameter, property, or condition that one of ordinary skill in the art would understand as meeting acceptable tolerances. For example, depending on the particular parameter, property, or condition that is substantially met, the parameter, property, or condition can be at least 90.0% met, at least 95.0% met, at least 99.0% met, or even at least 99.9% met.

[0061] As used herein, "about" or "approximately" with respect to a numerical value of a particular parameter includes the numerical value and a degree of variation in the numerical value that one of ordinary skill in the art would understand as being within acceptable tolerances of the particular parameter. For example, "about" or "approximately" with respect to a numerical value can include additional numerical values that are within a range of 90.0% to 110.0% of the numerical value, such as within a range of 95.0% to 105.0% of the numerical value, within a range of 97.5% to 102.5% of the numerical value, within a range of 99.0% to 101.0% of the numerical value, within a range of 99.5% to 100.5% of the numerical value, or within a range of 99.9% to 100.1% of the numerical value.

[0062] As used herein, unless otherwise indicated, the terms "layer" and "film" mean and include a level, sheet, or coating of material residing on a structure, which can be continuous or discontinuous between portions of material, and which can be conformal or non-conformal.

[0063] As used herein, the term "substrate" means and includes a base material or construction on which additional materials are formed. The substrate can be a semiconductor substrate, a base semiconductor layer on a support structure, a metal electrode, a semiconductor substrate on which one or more materials, layers, structures, or regions are formed. Materials on a semiconductor substrate can include, but are not limited to, semiconductive materials, insulating materials, conductive materials, etc. The substrate can be a conventional silicon substrate, or other bulk substrate including a layer of semiconductive material. As used herein, the term "bulk substrate" means and includes not only silicon wafers, but also silicon-on-insulator ("SOI") substrates, such as sapphire-on-silicon ("SOS") substrates and glass-on-silicon ("SOG") substrates, silicon epitaxial layers on base semiconductor foundations, and other semiconductor or optoelectronic materials, such as silicon germanium, germanium, gallium arsenide, gallium nitride, and indium phosphide. The substrate can be doped or undoped. The term "substrate" also means and includes organic substrates, such as substrates having multiple metal layers in trace form and interposed with dielectric layers, such as resin-glass woven polymers. For example, a conventional BGA package includes multiple dies on one side of an organic substrate and an encapsulant, such as epoxy molding compound (EMC), and an array of solder balls on the other side.

[0064] As used herein, the term "microelectronic device" means and includes, by way of non-limiting example, a semiconductor die; a die that exhibits functionality by activities other than semiconductivity; a microelectromechanical system (MEMS) device; a substrate including multiple dies, including conventional wafers as well as other bulk substrates as noted above; and a partial wafer and substrate segment including more than one die location.

[0065] As used herein, the term "memory device" means and includes, by way of non-limiting example, semiconductor and other microelectronic devices that exhibit memory functionality but do not exclude other functionality unless otherwise clearly indicated by the context in which this term is used. In other words, and by way of example only, the term "memory device" means and includes not only conventional memory in the form of DRAM, NAND, etc., but also, by way of example only, an application specific integrated circuit (ASIC) such as a system on a chip (SoC), a microelectronic device that combines logic and memory, or a graphics processing unit (GPU) that incorporates memory.

[0066] As used herein, unless otherwise explicitly stated, the terms "metal" and "metallic material" mean and include elemental metals, metal alloys, and combinations (e.g., layers) of different and adjacent metals or metal alloys.

[0067] SUMMARY

[0068] Embodiments of the disclosure include an apparatus for handling microelectronic devices, the apparatus comprising: a pick arm having a pick surface configured for receiving a microelectronic device thereon; a drive for moving the pick arm and reorienting the pick surface in X, Y, and Z planes and about a horizontal and a vertical rotation axis; and a sensor device carried by the pick arm and configured to detect at least one of at least one magnitude of force or at least one location of force exerted between the pick surface and a structure in contact with the pick surface or between a microelectronic device carried on the pick surface and a microelectronic device.

[0069] Embodiments of the disclosure include a method comprising: moving a pick arm of a pick-and-place apparatus toward a singulated microelectronic device; initiating contact of the microelectronic device with a pick surface of the pick arm; and sensing at least one of one or more forces or one or more locations of force exerted between the pick surface and the contacted microelectronic device with a sensor device carried by the pick arm.

[0070] Embodiments of the disclosure include an apparatus for handling microelectronic devices, the apparatus comprising: a bond head comprising a bond end having a bond end surface for receiving a microelectronic device thereon; and a sensor device comprising a plurality of sensors carried by the bond head and configured to detect at least one of at least one magnitude of force or at least one location of force exerted between the bond end surface and a microelectronic device in contact with the bond end surface, between a microelectronic device carried by the bond end surface and another microelectronic device, or between the bond end surface and a stack of microelectronic devices.

[0071] While certain illustrative embodiments have been described in connection with the accompanying drawings, it will be apparent to those skilled in the art that embodiments encompassed by the disclosure are not limited to those embodiments explicitly shown and described herein. Indeed, various additions, deletions and modifications to the described embodiments can be made without departing from the scope of embodiments encompassed by the disclosure as set forth in the claims including legal equivalents, as such. In addition, features of one disclosed embodiment can be combined with features of one or more other disclosed embodiments, and still be encompassed within the scope of the disclosure.

Claims

1. An apparatus for handling microelectronic devices, comprising: a pick-up arm having a pick-up surface configured for receiving a microelectronic device thereon; drive means for moving the pick-up arm and re-orienting the pick-up surface in X, Y and Z planes and about a horizontal and a vertical rotational axis; a sensor device carried by the pick-up arm and configured to detect at least one of at least one magnitude of force or at least one location of force exerted between the pick-up surface and a structure in contact with the pick-up surface or between a structure and a microelectronic device carried on the pick-up surface; and a controller programmed to control the drive means to move the pick-up arm and re-orient the pick-up surface, the controller configured to re-orient the microelectronic device carried on the pick-up surface in response to the sensor device detecting at least one of at least one magnitude of force or at least one location of force exerted between the structure and the microelectronic device.

2. The apparatus of claim 1, wherein the sensor device comprises a single sensor element.

3. The apparatus of claim 2, wherein the single sensor element comprises a load cell, a non-directional piezoelectric impact sensor, a capacitive MEMS force sensor, a tri-axial MEMS piezoelectric force sensor, or a piezoelectric actuator adapted to sense position.

4. The apparatus of claim 1, wherein the sensor device comprises a plurality of sensor elements.

5. The apparatus of claim 4, wherein the plurality of sensor elements are fabricated as individual elements and combined, or fabricated as individual segments in a single structure.

6. The apparatus of claim 5, wherein the plurality of sensor elements comprise selectively metallized piezoelectric polymer film, a plurality of tri-axial MEMS piezoelectric load sensors, or a plurality of piezoresistive sensor elements.

7. The apparatus of any of claims 4, 5 or 6, wherein the plurality of sensor elements are configured as an array of rows and columns of sensor elements.

8. The apparatus of any of claims 1 to 6, wherein the sensor device is configured to generate a signal representative of the at least one magnitude of force, and the apparatus is configured to communicate the signal to the controller.

9. The apparatus of claim 8, wherein the controller is programmed to stop movement of the pick-up arm toward a structure in response to the signal representing a force magnitude at or above a threshold value.

10. The apparatus of claim 9, wherein the threshold force magnitude is preselected and programmed to the controller.

11. The apparatus of claim 9, wherein the controller is programmed to move the pick-up arm in response to a representative signal to transfer the microelectronic device from a first intended destination to a second destination.

12. The apparatus of any of claims 1 to 6, wherein the sensor device is configured to generate a signal representative of the at least one location of force exerted, and the apparatus is configured to communicate the signal to the controller.

13. The apparatus of claim 12 wherein the controller is programmed to stop intended movement of the pick arm toward a structure in response to the signals representing force applied at a single point of contact, at or below a predetermined number of points of contact, a plurality of points of contact arranged in a line, contact across less than 90% of a surface area of the pick surface, a non-parallel orientation of the pick surface relative to a facing structure surface, or a rotational misalignment of the pick surface with a facing structure surface.

14. The apparatus of claim 13 wherein the controller is programmed to cause the pick arm to transfer the microelectronic device from a first intended destination to a second destination in response to representative signals.

15. The apparatus of any of claims 1-6 wherein the sensor device is configured to generate signals representing the at least one magnitude of applied force and the at least one location of applied force, and the apparatus is configured to communicate the signals to the controller.

16. The apparatus of claim 15 wherein the controller is programmed to stop intended movement of the pick arm toward a structure in response to one or more of: a signal representing a magnitude of applied force at or above a threshold magnitude or a signal representing force applied at a single point of contact, at or below a predetermined number of points of contact, a plurality of points of contact arranged in a line, contact across less than 90% of a surface area of the pick surface, a non-parallel orientation of the pick surface relative to a facing structure surface above a threshold acute angle, or a rotational misalignment of the pick surface with a facing structure surface.

17. The apparatus of claim 15 wherein the controller is programmed to determine a location of a non-parallel orientation of the pick surface to a structure surface contacted by the pick surface or a microelectronic device carried by the pick surface from at least some of the representative signals in response to the signals.

18. The apparatus of claim 17 wherein the controller is programmed to stop intended movement of the pick arm toward the structure upon determining that the non-parallel orientation is above a threshold acute angle.

19. The apparatus of any of claims 1-6 wherein the pick arm includes a tooling carrying the pick surface, the tooling specific to a size and shape of microelectronic device to be handled by the pick arm.

20. The apparatus of claim 19 wherein the sensor device is positioned between the tooling and a portion of the pick arm operably coupled to the drive member.

21. The apparatus of claim 20 further comprising a vacuum port open to the pick surface and selectively operably coupled to a vacuum source.

22. The apparatus of any of claims 1-6 further comprising a vacuum port open to the pick surface and selectively operably coupled to a vacuum source.

23. The apparatus of any one of claims 1-6, further comprising one or more acoustic sensors carried by the pick arm, the one or more acoustic sensors configured and positioned to detect acoustic emissions associated with contact between a microelectronic device and at least one of the pick surface or a microelectronic device carried on the pick surface and a bond pad surface.

24. A method comprising: moving a pick arm of a pick-and-place apparatus toward a singulated microelectronic device; initiating contact between the microelectronic device and a pick surface of the pick arm; and sensing, by a sensor device carried by the pick arm, at least one of one or more forces or one or more locations of forces exerted between the pick surface and the contacted microelectronic device, generating, by the sensor device, one or more signals representative of the at least one of one or more forces or one or more locations of forces exerted between the pick surface and the contacted microelectronic device; sending the one or more signals to a controller configured to control movement of the pick arm; determining, by the controller from the one or more signals, whether at least one of the following conditions exists: a contact force between the pick surface and the microelectronic device exceeds a threshold magnitude; a single point of contact between the pick surface and the microelectronic device; a number of points of contact between the pick surface and the microelectronic device is at or below a certain number; a number of points of contact between the pick surface and the microelectronic device is along a line; less than 90% of a surface area of the pick surface is in contact with the microelectronic device; a non-parallel orientation of the pick surface relative to a surface of the facing microelectronic device is above a threshold acute angle; or a rotational misalignment of the pick surface and the microelectronic device; receiving the microelectronic device on the pick surface; reorienting the pick surface to face a bond pad surface of a thermal compression bonding apparatus bonding head; moving the pick arm to a position in which a surface of the microelectronic device is proximate to and faces the bond pad surface; transferring the microelectronic device from the pick surface to the bond pad surface; and sensing, by the sensor device, at least one of one or more forces or one or more locations of forces exerted between the surface of the microelectronic device and the bond pad surface.

25. The method of claim 24, further comprising, in response to a determination that the at least one of the conditions exists, the controller stopping movement of the pick arm toward the microelectronic device.

26. The method of claim 24, further comprising the sensor device generating one or more signals representative of the at least one of one or more forces or one or more locations of forces exerted between the surface of the microelectronic device and the bond pad surface; sending the one or more signals to a controller configured to control movement of the pick arm; determining, by the controller from the one or more signals, whether at least one of the following conditions exists: ​ ​ ​ a contact force between the bonding end surface and the microelectronic device surface exceeds a threshold magnitude; a single point of contact between the bonding end surface and the microelectronic device surface; a number of points of contact between the bonding end surface and the microelectronic device surface is at or below a certain number; a number of points of contact between the bonding end surface and the microelectronic device surface is along a line; less than 90% of a surface area of the microelectronic device surface is in contact with the bonding end surface; a non-parallel orientation of the microelectronic device surface relative to the bonding end surface is above a threshold acute angle; or a rotational misalignment of the microelectronic device relative to the bonding end surface.

27. The method of claim 26, further comprising, in response to a determination that the at least one of the conditions exists, the controller stopping movement of the pick arm toward the microelectronic device.

28. The method of claim 24, further comprising sensing acoustic emissions associated with contact of the pick surface of the pick arm and the microelectronic device or engagement of the microelectronic device carried by the pick surface and an engagement end surface of an engagement end of a bond head.

29. An apparatus for handling microelectronic devices, comprising: a bond head including an engagement end having an engagement end surface for receiving a microelectronic device thereon; a sensor device including a plurality of sensors carried by the bond head and configured to detect at least one of at least one magnitude of force or at least one location of force exerted between the bond head and a microelectronic device contacting the engagement end surface, a microelectronic device carried by the engagement end surface and another microelectronic device, or the engagement end and a stack of microelectronic devices; and a controller configured to direct movement of the bond head, the controller programmed to stop intended movement of the bond head in response to a signal generated by the sensor device and to cause the bond head to transfer the microelectronic device from a first intended destination to a second destination.

30. The apparatus of claim 29, wherein the controller is configured to re-orient the microelectronic device carried on the engagement end surface in response to the sensor device detecting at least one of at least one magnitude of force or at least one location of force exerted between a structure and the microelectronic device.

31. The apparatus of claim 29, wherein the plurality of sensors of the sensor device includes four individual force sensors located at respective corners of the sensor device.

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