Multi-tool parameter set calibration and offset measurement system and method

Abstract

A multi-tool parameter set calibration and offset measurement method used in semiconductor device manufacturing includes using at least a first reference offset metrology tool, using a first measurement parameter set to measure offsets between at least two layers on a wafer of a batch of wafers, thereby generating a first offset data set; transferring the first parameter set and the data set to a calibrated measurement parameter set generator (CSMPG), the CSMPG processing the first parameter set and the data set, thereby generating a calibrated measurement parameter set, transferring the calibrated measurement parameter set from the CSMPG to calibrate at least one initially uncalibrated offset metrology tool based on the calibrated measurement parameter set. Thereafter, using at least the initially uncalibrated offset metrology tool, using the calibrated measurement parameter set for the measurement to measure offsets between at least two layers of at least one wafer.

Description

[0001] Cross-reference of related applications

[0002] This application claims priority to U.S. Provisional Patent Application No. 62 / 864,296, filed June 20, 2019, entitled “Approach for Tool-to-Tool Matching Calibration,” the disclosure of which is incorporated herein by reference and its priority is claimed herein. Technical Field

[0003] This invention generally relates to offset measurement in semiconductor device manufacturing. Background Technology

[0004] Various methods and systems for offset measurement in semiconductor device manufacturing are known. Summary of the Invention

[0005] This invention seeks to provide an improved method and system for offset measurement in semiconductor device manufacturing.

[0006] Therefore, according to a preferred embodiment of the present invention, a multi-tool parameter set calibration and offset measurement method for use in semiconductor device manufacturing is provided, comprising: using at least one first reference offset metrology tool, using a first measurement parameter set to measure the offset between at least two layers on a wafer selected from a batch of wafers, thereby generating a first offset dataset; and transmitting the first measurement parameter set and the first offset dataset to a calibrated measurement parameter set generator (CSMPG). The method further comprises: processing the first offset parameter set and the first offset dataset using the CSMPG to generate a calibrated measurement parameter set; and transmitting the calibrated measurement parameter set from the CSMPG to at least one initially uncalibrated offset metrology tool. The method further comprises: calibrating the at least one initially uncalibrated offset metrology tool based on the calibrated measurement parameter set; and subsequently using the at least one initially uncalibrated offset metrology tool to measure the offset between at least two layers on at least one wafer selected from the batch of wafers, the initially uncalibrated offset metrology tool using the calibrated measurement parameter set for the measurement.

[0007] According to a preferred embodiment of the invention, calibrating the at least one initially uncalibrated offset measurement tool includes calibrating a plurality of initially uncalibrated offset measurement tools.

[0008] According to a preferred embodiment of the present invention, the method further includes, before generating the calibrated measurement parameter set, using a second reference offset metrology tool, using the second measurement parameter set to measure the offset between the at least two layers on a wafer selected from the batch of wafers, thereby generating a second offset dataset; and transferring the second measurement parameter set and the second offset dataset from the second offset metrology tool to the calibrated measurement parameter set generator (CSMPG); and processing the second offset parameter set and the second offset dataset using the CSMPG, thereby generating the calibrated measurement parameter set.

[0009] According to a preferred embodiment of the present invention, processing the first offset parameter set and the first offset dataset includes using the CSMPG algorithm (CSMPGA).

[0010] According to a preferred embodiment of the present invention, the CSMPGA includes a machine learning algorithm. According to a preferred embodiment of the present invention, the machine learning algorithm includes at least one of the following: neural network analysis, principal component analysis, support vector machine, decision tree, and Gaussian process.

[0011] According to a preferred embodiment of the present invention, the CSMPGA includes a regression analysis algorithm.

[0012] According to a preferred embodiment of the invention, the at least first reference offset metrology tool and the at least one initially uncalibrated offset metrology tool comprise a scattering measurement offset metrology tool. According to a preferred embodiment of the invention, the first set of measurement parameters comprises at least one of the following: linear position of the wafer stage for offset measurement, azimuth orientation of the wafer stage for offset measurement, elevation orientation of the wafer stage for offset measurement, axis along which the offset is measured, region of interest of the metrology target, polarization of light for offset measurement, wavelength of light for offset measurement, bandwidth of the wavelength of light for offset measurement, intensity of light for offset measurement, depth of focus for offset measurement, apodizer for offset measurement, and optical device channel for offset measurement. According to a preferred embodiment of the invention, the first offset dataset comprises offset values. According to a preferred embodiment of the invention, the first offset dataset comprises one or more quality metrics selected from the group consisting of: accuracy flag, tool-induced shift (TIS), Qmerit, focus sensitivity, pupil 3σ, normalized pupil 3σ (MEB), throughput, and accuracy.

[0013] According to a preferred embodiment of the present invention, the at least first reference offset metrology tool and the initially uncalibrated offset metrology tool are imaging offset metrology tools. According to a preferred embodiment of the present invention, the first set of measurement parameters includes at least one of the following: linear position of the wafer stage for offset measurement, azimuth orientation of the wafer stage for offset measurement, elevation orientation of the wafer stage for offset measurement, axis along which the offset is measured, region of interest of the metrology target, numerical aperture for offset measurement, polarization of light for offset measurement, wavelength of light for offset measurement, bandwidth of the wavelength of light for offset measurement, intensity of light for offset measurement, depth of focus for offset measurement, and camera for offset measurement. According to a preferred embodiment of the present invention, the offset dataset includes offset values. According to a preferred embodiment of the present invention, the offset dataset includes one or more quality metrics selected from the group consisting of: accuracy flags, tool-induced shift (TIS), Qmerit, focus sensitivity, contrast accuracy, throughput, and accuracy.

[0014] According to a preferred embodiment of the present invention, the calibrated measurement parameter set includes at least one of the following: linear position of the wafer stage for offset measurement, azimuth orientation of the wafer stage for offset measurement, elevation orientation of the wafer stage for offset measurement, axis along which the offset is measured, region of interest of the measurement target, numerical aperture for offset measurement, polarization of light for offset measurement, wavelength of light for offset measurement, bandwidth of wavelength of light for offset measurement, intensity of light for offset measurement, depth of focus for offset measurement, camera for offset measurement, polarization of light for offset measurement, apodizer for offset measurement, and optical device channel for offset measurement.

[0015] According to another preferred embodiment of the present invention, a multi-tool parameter set calibration and offset measurement system for use in semiconductor device manufacturing is also provided, comprising: at least one first reference offset metrology tool operable to use a first measurement parameter set to measure the offset between at least two layers on a wafer selected from a batch of wafers, thereby generating a first offset dataset; at least one first initially uncalibrated offset metrology tool operable to measure the offset between at least two layers on a wafer selected from the batch of wafers; and a calibrated measurement parameter set generator (CSMPG) operable to: receive the first measurement parameter set and the first offset dataset from the at least one first reference offset metrology tool; process the first measurement parameter set and the first offset dataset to generate a calibrated measurement parameter set; and transmit the calibrated measurement parameter set from the CSMPG to the at least one initially uncalibrated offset metrology tool to facilitate calibration of the at least one initially uncalibrated offset metrology tool. Attached Figure Description

[0016] The invention will be more fully understood and appreciated from the following detailed description obtained in conjunction with the drawings, wherein:

[0017] Figure 1 This is a simplified schematic illustration of the Multi-Tool Parameter Set Calibration and Offset Measurement System (MTPSCMMS); and

[0018] Figure 2A and 2B Together is an explanation of Figure 1 A simplified flowchart of the Multi-Tool Parameter Set Calibration and Offset Measurement Method (MTPSCMMM) used by MTPSCMMS. Detailed Implementation

[0019] Please note that the following text is for reference only. Figures 1 to 2B The described system and method are used to measure the offset between layers of a wafer on which a semiconductor device is formed, and are used as a part of the semiconductor device manufacturing process. (Refer to the following...) Figures 1 to 2B The described system and method measure offsets used to adjust manufacturing processes (e.g., photolithography) during semiconductor device fabrication to improve offsets between various layers of the manufactured semiconductor device.

[0020] For reference Figure 1 , Figure 1 This is a simplified illustrative description of the Multi-Tool Parameter Set Calibration and Offset Measurement System (MTPSCMMS) 100. Figure 1 As seen, the MTPSCMMS 100 includes at least one (e.g., two or more) reference offset metrology tool 102 and at least one (e.g., two or more) initially uncalibrated offset metrology tool 104. Each of the at least one reference offset metrology tool 102 is operable to measure the offset between at least two layers formed on wafer 112 using a corresponding set of measurement parameters. Wafer 112 preferably includes multiple semiconductor devices and is selected from a batch of wafers 120. The at least one reference offset metrology tool 102 thereby generates a corresponding offset dataset. It should be noted that each or any of the at least one reference offset metrology tool 102 and each or any of the initially uncalibrated offset metrology tools 104 measures the offset at a single site or multiple sites on wafer 112.

[0021] In embodiments of this application, the MTPSCMMS 100 is operable to use a first reference offset metrology tool 102 to measure the offset between at least two layers formed on wafer 112 using a first set of measurement parameters to generate a first offset dataset. The MTPSCMMS 100 is operable to: (1) process the first set of measurement parameters and the first offset dataset from the first reference offset metrology tool 102; (2) generate a calibrated set of measurement parameters based on the first set of measurement parameters and the first offset dataset from the first reference offset metrology tool 102; and (3) calibrate at least one initially uncalibrated offset metrology tool 104 (e.g., multiple initially uncalibrated offset metrology tools 104) using the calibrated set of measurement parameters.

[0022] Once at least one initially uncalibrated offset measurement tool 104 is calibrated, the initially uncalibrated offset measurement tool 104 can use the calibrated measurement parameter set to measure the offset between at least two layers formed on the wafer 112.

[0023] It should be noted that the MTPSCMMS 100 is operable to use any number of reference offset measurement tools 102 to measure the offset between at least two layers formed on the wafer 112, each reference offset measurement tool 102 using a corresponding set of measurement parameters to generate a corresponding offset dataset.

[0024] It should be understood that each of the various reference offset measurement tools 102 and each of the initially uncalibrated offset measurement tools 104 can measure the offset between at least two layers of the same wafer 112 or different wafer 112 from the batch wafer 120.

[0025] In one embodiment of the invention, each of the wafers 112 in the batch of wafers 120 undergoes the same manufacturing steps and includes a semiconductor device that is intended to be the same as the corresponding semiconductor device on all other wafers 112 in the batch of wafers 120.

[0026] In another embodiment of the invention, at least one wafer 112 in the batch of wafers 120 is intentionally manufactured differently from the other wafers 112 in the batch of wafers 120, typically as a design of experiment (DOE) wafer, which is manufactured using parameters that are intentionally different from the other wafers 112 in the batch of wafers 120.

[0027] The reference offset metrology tool 102 and the initially uncalibrated offset metrology tool 104 can be any suitable offset metrology tool. Preferably, all offset metrology tools 102 and 104 in the MTPSCMMS 100 belong to a single category of offset metrology tools. Examples of offset metrology tool categories include, in particular, scattering measurement offset metrology tools, imaging offset metrology tools, and electron beam offset metrology tools.

[0028] Typical scattering measurement offset measurement instruments that can be used as offset measurement tools 102 and 104 are commercially available from KLA Corporation of Milpitas, CA, USA. TM 100. Typical imaging migration measurement tools that can be used as migration measurement tools 102 and 104 are the Archer, commercially available from KLA Corporation of Milpitas, California, USA. TM 750. A typical electron beam offset metrology tool that can be used as offset metrology tool 102 and 104 is the commercially available eDR7380 from KLA Corporation of Milpitas, California, USA. TM .

[0029] It should be noted that although all offset measurement tools 102 and 104 of MTPSCMMS 100 belong to a single category of offset measurement tools, each of the offset measurement tools 102 and 104 of MTPSCMMS 100 need not be the same model of offset measurement tool.

[0030] For example, in an embodiment where offset measurement tools 102 and 104 belong to the category of imaging offset measurement tools, the offset measurement tools 102 and 104 may be Archer. TM 750 and the other of the offset measurement tools 102 and 104 can be Archer TM 600 or any other suitable imaging offset measurement tool.

[0031] Similarly, in embodiments where offset measurement tools 102 and 104 belong to the category of scattering measurement offset measurement tools, one of offset measurement tools 102 and 104 may be an ATL. TM 100 and the other of offset measurement tools 102 and 104 may be ATL TM 150 or any other suitable scattering measurement offset metrology tool.

[0032] Similarly, in embodiments where offset measurement tools 102 and 104 belong to the category of electron beam offset measurement tools, one of offset measurement tools 102 and 104 may be an eDR7380. TM Furthermore, the other of the offset measurement tools 102 and 104 can be an eDR7280. TM Or any other suitable electron beam deflection measurement tool.

[0033] It should be understood that the MTPSCMMS 100 may include more than one (e.g., more than two) reference offset metrology tools 102 and more than one (e.g., more than two) initially uncalibrated offset metrology tools 104. Preferably, all offset metrology tools 102 and 104 in the MTPSCMMS 100 belong to the same category, such as all scattering measurement offset metrology tools, all imaging offset metrology tools, or all electron beam offset metrology tools.

[0034] MTPSCMMS 100 further includes a calibrated measurement parameter set generator (CSMPG) 132. A first reference offset metrology tool 102 uses the first measurement parameter set to measure the offset between at least two layers on wafer 112, thereby generating a first offset dataset. The first reference offset metrology tool 102 transmits the first measurement parameter set and the first offset dataset to the CSMPG 132. The first offset dataset generated by the first reference offset metrology tool 102 specifically includes offset values ​​and quality measures.

[0035] The offset value preferably includes the magnitude and direction of the offset between at least two layers of wafer 112 at one or more locations on wafer 112. Quality metrics may include, in particular, accuracy flags, tool-induced shift (TIS), Qmerit, focus sensitivity, throughput, and precision. If the reference offset metrology tool 102 is embodied as an imaging or electron beam offset metrology tool, the quality metric set may also include, for example, contrast accuracy. If the reference offset metrology tool 102 is embodied as a scattering measurement offset metrology tool, the quality metric set may also include, for example, pupil 3σ, normalized pupil 3σ (MEB), and any additional suitable pupil data quality metrics.

[0036] CSMPG 132 is operable to: receive a first set of measurement parameters and a first offset dataset generated by the first reference offset metrology tool 102 from the first reference offset metrology tool 102; process the first set of measurement parameters and the first offset dataset generated by the first reference offset metrology tool 102; and generate a calibrated set of measurement parameters by processing the first set of measurement parameters and the first offset dataset generated by the first reference offset metrology tool 102. CSMPG 132 is operable to then transmit the calibrated set of measurement parameters to at least one initially uncalibrated offset metrology tool 104 (e.g., multiple initially uncalibrated offset metrology tools 104) to facilitate calibration of at least one initially uncalibrated offset metrology tool 104 (e.g., multiple initially uncalibrated offset metrology tools 104) using the calibrated set of measurement parameters generated by CSMPG 132.

[0037] For some applications of the present invention, at least one second and / or additional reference offset metrology tool 102 is operable to use a second and / or (a plurality of) additional measurement parameter sets to measure the offset between at least two layers on wafer 112 selected from batch wafer 120, to generate a second and / or additional offset dataset. CSMPG 132 is operable to: (a) receive respective first and second and / or additional measurement parameter sets and respective first and second and / or additional offset datasets generated by the first and at least second and / or additional reference offset metrology tool 102; (b) process the respective first and second and / or additional measurement parameter sets and the respective first and second and / or additional offset datasets generated by the first and at least second and / or additional reference offset metrology tool 102; and (c) generate a calibrated measurement parameter set by processing the respective first and second and / or additional measurement parameter sets and the respective first and second and / or additional offset datasets generated by the first and at least second and / or additional reference offset metrology tool 102. CSMPG 132 then transmits the calibrated measurement parameter set to at least one initially uncalibrated offset metrology tool 104 (e.g., multiple initially uncalibrated offset metrology tools 104) to facilitate calibration of at least one initially uncalibrated offset metrology tool 104 (e.g., multiple initially uncalibrated offset metrology tools 104) using the calibrated measurement parameter set generated by CSMPG 132.

[0038] In both embodiments of the invention where CSMPG 132 receives only a set of measurement parameters and an offset dataset from a first reference offset metrology tool 102, and embodiments where CSMPG 132 receives corresponding sets of measurement parameters and corresponding offset datasets from multiple reference offset metrology tools 102, CSMPG 132 processes one or more sets of measurement parameters and one or more offset datasets to produce a calibrated set of measurement parameters for at least one initially uncalibrated offset metrology tool 104. Preferably, CSMPG uses the CSMPG algorithm (CSMPGA) to process one or more sets of measurement parameters and one or more offset datasets.

[0039] CSMPGA can be any suitable algorithm, especially machine learning algorithms or regression analysis algorithms. Suitable machine learning algorithms can be, for example, neural network analysis, principal component analysis, support vector machines, decision trees, or Gaussian processes.

[0040] Preferably, as part of the CSMPGA, the CSMPG 132 models the expected offset dataset for various sets of measurement parameters. The CSMPG 132 compares the expected offset datasets generated by the CSMPGA with each other, and the CSMPG 132 identifies any set of measurement parameters associated with a particularly desired expected offset dataset as a calibrated set of measurement parameters. The particularly desired expected offset dataset may be an expected offset dataset having at least one of a particularly desired offset value and a particularly desired quality metric.

[0041] The set of measurement parameters transmitted from (a number of) reference offset metrology tools 102 to CSMPG 132 and the set of calibrated measurement parameters transmitted from CSMPG 132 to any of the initially uncalibrated offset metrology tools 104 may in particular include: the linear position of the wafer stage for offset measurement, the azimuth orientation of the wafer stage for offset measurement, the elevation orientation of the wafer stage for offset measurement, the axis along which the offset is measured, the region of interest of the metrology target, the numerical aperture for offset measurement, the polarization of light for offset measurement, the wavelength of light for offset measurement, the bandwidth of the wavelength of light for offset measurement, the intensity of light for offset measurement, the depth of focus for offset measurement, the apodizer for offset measurement, the optical device channel for offset measurement, and the camera for offset measurement.

[0042] For reference Figure 2A and 2B , Figure 2A and 2B This is a simplified flowchart illustrating the Multi-Tool Parameter Set Calibration and Offset Measurement Method (MTPSCMMS 100) 200 used by MTPSCMMS 100. (See attached diagram.) Figure 2A As seen in the first step 202, the first reference offset measurement tool 102 uses a first set of measurement parameters to measure the offset between at least two layers on wafer 112 selected from batch wafer 120.

[0043] In the next step 204, a decision is made on whether to use an additional (e.g., second) reference offset measurement tool 102 to measure the same wafer 112 or additional wafer 112 selected from the batch wafer 120, the additional (e.g., second) reference offset measurement tool 102 using a second set of measurement parameters to measure the offset between at least two layers on the wafer 112 selected from the batch wafer 120 in order to generate a second offset dataset.

[0044] Next, in the next step 206, if an additional (e.g., second) reference offset measurement tool 102 will be used to measure the same wafer 112 or an additional wafer 112 selected from the batch wafer 120, then the additional (e.g., second) reference offset measurement tool 102 is used to measure the wafer 112 using an additional set of measurement parameters. MTPSCMMM 200 then returns to step 204.

[0045] If the same wafer 112 or an additional wafer 112 selected from batch wafer 120 is to be measured without using an additional reference offset metrology tool 102, then in the next step 208, CSMPG 132 (a) receives a set of measurement parameters and an offset dataset from step 202 and optionally from step 206 (which is preferably transferred from the first reference offset metrology tool 102 and from any additional (e.g., second) reference offset metrology tool 102 to CSMPG 132); (b) processes the transferred set of measurement parameters and the offset dataset; and (c) generates a calibrated set of measurement parameters through the processing.

[0046] The set of measurement parameters used in steps 202 and 206 may specifically include: the linear position of the wafer stage for offset measurement, the azimuth orientation of the wafer stage for offset measurement, the elevation orientation of the wafer stage for offset measurement, the axis along which the offset is measured, the region of interest of the measurement target, the numerical aperture for offset measurement, the polarization of light for offset measurement, the wavelength of light for offset measurement, the bandwidth of the wavelength of light for offset measurement, the intensity of light for offset measurement, the depth of focus for offset measurement, the apodizer for offset measurement, the optical device channel for offset measurement, and the camera for offset measurement.

[0047] The offset dataset(s) generated in steps 202 and 206 may, in particular, include offset values ​​and quality metrics. The offset values ​​preferably include the magnitude and direction of the offset between at least two layers of wafer 112 at one or more locations on wafer 112. Quality metrics may, in particular, include accuracy flags, tool-induced shift (TIS), Qmerit, focus sensitivity, throughput, and accuracy. If the reference offset metrology tool 102 is embodied as an imaging or electron beam offset metrology tool, the quality metric set may also include, for example, contrast accuracy. If the reference offset metrology tool 102 is embodied as a scattering measurement offset metrology tool, the quality metric set may also include, for example, pupil 3σ, normalized pupil 3σ (MEB), and any additional suitable pupil data quality metrics.

[0048] Preferably, in step 208, CSMPG 132 uses the CSMPG algorithm (CSMPGA) to generate a calibrated set of measurement parameters, wherein the CSMPGA can be any suitable algorithm, particularly, for example, a regression analysis algorithm or the CSMPG machine learning algorithm (CSMPGMLA). CSMPGMLA can be any suitable algorithm, particularly, for example, neural network analysis, principal component analysis, support vector machine, decision tree, and Gaussian process.

[0049] Preferably, as part of the CSMPGA, the CSMPG 132 models the expected offset dataset for various sets of measurement parameters. The CSMPG 132 compares the expected offset datasets generated by the CSMPGA with each other, and the CSMPG 132 identifies any set of measurement parameters associated with a particularly desired expected offset dataset as a calibrated set of measurement parameters. The particularly desired expected offset dataset may be an expected offset dataset having at least one of a particularly desired offset value and a particularly desired quality metric.

[0050] In the next step 214, the calibrated measurement parameter set generated in step 208 is transferred to one or more initially uncalibrated offset metrology tools 104 in the MTPSCMMS 100. In step 214, one or more initially uncalibrated offset metrology tools 104 are calibrated according to and based on the calibrated measurement parameter set generated in step 208.

[0051] The calibrated set of measurement parameters transmitted from CSMPG 132 to any of the initially uncalibrated offset metrology tools 104 in steps 208, 214, 216, and 218 may specifically include: the linear position of the wafer stage for offset measurement, the azimuth orientation of the wafer stage for offset measurement, the elevation orientation of the wafer stage for offset measurement, the axis along which the offset is measured, the region of interest of the metrology target, the numerical aperture for offset measurement, the polarization of light for offset measurement, the wavelength of light for offset measurement, the bandwidth of the wavelength of light for offset measurement, the intensity of light for offset measurement, the depth of focus for offset measurement, the apodizer for offset measurement, the optical path for offset measurement, and the camera for offset measurement.

[0052] In the next step 218, MTPSCMMM 200 uses at least one of the initially uncalibrated offset measurement tools 104 used in steps 214 and 216 to measure the offset between at least two layers of at least one wafer 112 from the batch wafer 120 using the corresponding calibrated measurement parameter set generated in step 208.

[0053] Those skilled in the art will understand that this invention is not limited to what has been specifically shown and described above. The scope of this invention includes all the features described above, as well as combinations and sub-combinations of modifications thereof (all of which are not found in the prior art).

Claims

1. A multi-tool parameter set calibration and overlay measurement method for use in semiconductor device manufacturing, comprising: using at least a first reference overlay metrology tool, using a first measurement parameter set to measure overlay between at least two layers on a wafer selected from a batch of wafers, thereby producing a first overlay dataset; transmitting the first measurement parameter set and the first overlay dataset to a calibrated measurement parameter set generator (CSMPG); processing the first measurement parameter set and the first overlay dataset using the CSMPG, thereby producing a calibrated measurement parameter set, the processing the first measurement parameter set and the first overlay dataset using the CSMPG comprising: modeling expected overlay datasets based on the first measurement parameter set and the first overlay dataset; comparing the modeled expected overlay datasets to one another; and identifying any measurement parameter set associated with an expected overlay dataset that meets a predetermined criterion as the calibrated measurement parameter set; wherein the calibrated measurement parameter set comprises at least one of: linear position of a wafer stage in overlay measurement; azimuthal orientation of a wafer stage in overlay measurement; elevation orientation of a wafer stage in overlay measurement; axis along which overlay is measured; region of interest of a metrology target; numerical aperture used in overlay measurement; polarization of light used in overlay measurement; wavelength of light used in overlay measurement; bandwidth of wavelength of light used in overlay measurement; intensity of light used in overlay measurement; focal depth used in overlay measurement; camera used in overlay measurement; apodizer used in overlay measurement; and optics channel used in overlay measurement; transmitting the calibrated measurement parameter set from the CSMPG to at least one initially uncalibrated overlay metrology tool; calibrating the at least one initially uncalibrated overlay metrology tool based on the calibrated measurement parameter set; and thereafter using the at least one initially uncalibrated overlay metrology tool to measure overlay between at least two layers of at least one wafer selected from the batch of wafers, the initially uncalibrated overlay metrology tool using the calibrated measurement parameter set for the measurement.

2. The multi-tool parameter set calibration and overlay measurement method of claim 1, and wherein the calibrating the at least one initially uncalibrated overlay metrology tool comprises calibrating a plurality of initially uncalibrated overlay metrology tools.

3. The multi-tool parameter set calibration and overlay measurement method of claim 1, wherein: the method further comprises, prior to the producing the calibrated measurement parameter set: using a second reference overlay metrology tool, using a second measurement parameter set to measure overlay between the at least two layers on a wafer selected from the batch of wafers, thereby producing a second overlay dataset; and transmitting the second measurement parameter set and the second overlay dataset from the second reference overlay metrology tool to the CSMPG; and processing the second measurement parameter set and the second overlay dataset using the CSMPG, thereby producing the calibrated measurement parameter set.

4. The multi-tool parameter set calibration and overlay measurement method of claim 1, and wherein said processing said first measurement parameter set and said first overlay data set comprises using a CSMPG algorithm (CSMPGA).

5. The multi-tool parameter set calibration and overlay measurement method of claim 4, and wherein said CSMPGA comprises a machine learning algorithm, and wherein said machine learning algorithm comprises at least one of: a neural network analysis; a principal component analysis; a support vector machine; a decision tree; or a Gaussian process.

6. The multi-tool parameter set calibration and overlay measurement method of claim 4, and wherein said CSMPGA comprises a regression analysis algorithm.

7. The multi-tool parameter set calibration and overlay measurement method of claim 1, and wherein said at least first reference overlay metrology tool and said at least one initially uncalibrated overlay metrology tool comprises a scatterometry overlay metrology tool, and wherein said first measurement parameter set comprises at least one of: said linear position of said wafer stage in said overlay measurement; said azimuthal orientation of said wafer stage in said overlay measurement; said elevation angle orientation of said wafer stage in said overlay measurement; said axis along which overlay is measured; said region of interest of said metrology target; said polarization of light used in said overlay measurement; said wavelength of light used in said overlay measurement; said bandwidth of wavelengths of light used in said overlay measurement; said intensity of light used in said overlay measurement; said depth of focus used in said overlay measurement; said apodizer used in said overlay measurement; or said optics channel used in said overlay measurement.

8. The multi-tool parameter set calibration and overlay measurement method of claim 7, and wherein said first overlay data set comprises an overlay value.

9. The multi-tool parameter set calibration and overlay measurement method of claim 7, and wherein said first overlay data set comprises one or more quality metrics selected from the group consisting of: an accuracy flag, a tool induced shift (TIS), a Qmerit, a focus sensitivity, a pupil 3σ, a normalized pupil 3σ (MEB), throughput, and precision.

10. The multi-tool parameter set calibration and overlay measurement method of claim 1, and wherein said at least first reference overlay metrology tool and said at least one initially uncalibrated overlay metrology tool comprises an imaging overlay metrology tool, and wherein said first measurement parameter set comprises at least one of: said linear position of said wafer stage in said overlay measurement; said azimuthal orientation of said wafer stage in said overlay measurement; said elevation angle orientation of said wafer stage in said overlay measurement; said axis along which overlay is measured; said region of interest of said metrology target; said numerical aperture used in said overlay measurement; said polarization of light used in said overlay measurement; said wavelength of light used in said overlay measurement; said bandwidth of wavelengths of light used in said overlay measurement; said intensity of light used in said overlay measurement; ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ the depth of focus used in the offset measurement; and the camera used in the offset measurement.

11. The multi-tool parameter set calibration and offset measurement method of claim 10 and wherein the first offset data set comprises offset values.

12. The multi-tool parameter set calibration and offset measurement method of claim 10 and wherein the first offset data set comprises one or more quality metrics selected from the group consisting of: an accuracy flag, a tool induced shift (TIS), a Qmerit, a focus sensitivity, a contrast precision, a throughput, and a precision.

13. A multi-tool parameter set calibration and offset measurement system used in semiconductor device manufacturing, comprising: at least a first reference offset metrology tool operable to measure an offset between at least two layers on a wafer using a first measurement parameter set, the wafer selected from a batch of wafers, thereby producing a first offset data set; at least one initially uncalibrated offset metrology tool operable to measure an offset between at least two layers on a wafer selected from the batch of wafers; and a calibrated measurement parameter set generator (CSMPG) operable to: receive the first measurement parameter set and the first offset data set from the at least first reference offset metrology tool; process the first measurement parameter set and the first offset data set, thereby producing a calibrated measurement parameter set, the processing the first measurement parameter set and the first offset data set comprising: modeling expected offset data sets based on the first measurement parameter set and the first offset data set; comparing the modeled expected offset data sets to each other; and identifying any measurement parameter set associated with an expected offset data set that meets a predetermined criteria as the calibrated measurement parameter set; wherein the calibrated measurement parameter set comprises at least one of: a linear position of a wafer stage used in offset measurement; an azimuthal orientation of a wafer stage used in offset measurement; an elevation orientation of a wafer stage used in offset measurement; an axis along which an offset is measured; a region of interest of a metrology target; a numerical aperture used in offset measurement; a polarization of light used in offset measurement; a wavelength of light used in offset measurement; a bandwidth of a wavelength of light used in offset measurement; an intensity of light used in offset measurement; a depth of focus used in the offset measurement; a camera used in the offset measurement; a variator used in the offset measurement; and an optical train channel used in the offset measurement; and communicating the calibrated measurement parameter set from the CSMPG to the at least one initially uncalibrated offset metrology tool to facilitate calibrating the at least one initially uncalibrated offset metrology tool.

14. The multi-tool parameter set calibration and offset measurement system of claim 13 and wherein the at least one initially uncalibrated offset metrology tool comprises a plurality of initially uncalibrated offset metrology tools and wherein the calibrated measurement parameter set generator (CSMPG) is configured to communicate the calibrated measurement parameter set to the plurality of initially uncalibrated offset metrology tools so as to calibrate the plurality of initially uncalibrated offset metrology tools.

15. The multiple tool parameter set calibration and overlay measurement system of claim 13, and further comprising a second reference overlay metrology tool operable to measure an overlay between at least two layers on a wafer selected from the batch of wafers using a second measurement parameter set, thereby generating a second overlay data set, and wherein the CSMPG is operable to: receive the second measurement parameter set and the second overlay data set from the second reference overlay metrology tool; and process the second measurement parameter set and the second overlay data set, thereby generating the calibrated measurement parameter set.

16. The multiple tool parameter set calibration and overlay measurement system of claim 13, and wherein the CSMPG is configured to generate the calibrated measurement parameter set by using a CSMPG algorithm (CSMPGA).

17. The multiple tool parameter set calibration and overlay measurement system of claim 16, and wherein the CSMPGA comprises a machine learning algorithm and wherein the machine learning algorithm comprises at least one of: a neural network analysis; a principal component analysis; a support vector machine; a decision tree; or a Gaussian process.

18. The multiple tool parameter set calibration and overlay measurement system of claim 16, and wherein the CSMPGA comprises a regression analysis algorithm.

19. The multiple tool parameter set calibration and overlay measurement system of claim 13, and wherein the at least first reference overlay metrology tool and the at least one initially uncalibrated overlay metrology tool comprise scatterometry overlay metrology tools, and wherein the first measurement parameter set comprises at least one of: the linear position of the wafer stage used in the overlay measurement; the azimuthal orientation of the wafer stage used in the overlay measurement; the elevation angle orientation of the wafer stage used in the overlay measurement; the axis along which overlay is measured; the region of interest of the metrology target; the polarization of light used in the overlay measurement; the wavelength of light used in the overlay measurement; the bandwidth of wavelengths of light used in the overlay measurement; the intensity of light used in the overlay measurement; the depth of focus used in the overlay measurement; the apodizer used in the overlay measurement; or the optics channel used in the overlay measurement.

20. The multiple tool parameter set calibration and overlay measurement system of claim 19, and wherein the first overlay data set comprises an overlay value.

21. The multiple tool parameter set calibration and overlay measurement system of claim 19, and wherein the first overlay data set comprises one or more quality metrics selected from the group consisting of: an accuracy flag, a tool induced shift (TIS), a Qmerit, a focus sensitivity, a pupil 3σ, a normalized pupil 3σ (MEB), a throughput, and a precision. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 22. The multi-tool parameter set calibration and overlay measurement system of claim 13, and wherein the at least first reference overlay metrology tool and the at least one initially uncalibrated overlay metrology tool comprise imaging overlay metrology tools, and wherein the first measurement parameter set comprises at least one of: the linear position of the wafer stage in the overlay measurement; the azimuthal orientation of the wafer stage in the overlay measurement; the elevation angle orientation of the wafer stage in the overlay measurement; the axis along which overlay is measured; the region of interest of a metrology target; the numerical aperture used in the overlay measurement; the polarization of light used in the overlay measurement; the wavelength of light used in the overlay measurement; the bandwidth of wavelengths of light used in the overlay measurement; the intensity of light used in the overlay measurement; the depth of focus used in the overlay measurement; or the camera used in the overlay measurement.

23. The multi-tool parameter set calibration and overlay measurement system of claim 22, and wherein the first overlay data set comprises overlay values.

24. The multi-tool parameter set calibration and overlay measurement system of claim 22, and wherein the first overlay data set comprises one or more quality metrics selected from the group consisting of: an accuracy flag, a tool induced shift (TIS), a Qmerit, a focus sensitivity, a contrast precision, a throughput, and a precision.

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