A distributed ion trap system

Through the design of the distributed ion trap system, the problem of scale difficulty of quantum computing system is solved, the system is simplified installation and performance stability is improved, and it is suitable for ultra-low temperature quantum computers.

CN113962396BActive Publication Date: 2025-06-24QUDOOR TECH INC +1
View PDF 3 Cites 0 Cited by

Patent Information

Application Number
CN202111490352.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-12-08
Publication Date
2025-06-24
Estimated Expiration
2041-12-08

AI Technical Summary

Technical Problem

Quantum computing systems that use ion trap technology have problems of difficulty in scale, including the limited number of trapped ions in a single ion trap, increased control complexity, reduced stability and difficult implementation of dual quantum logic gates.

Method used

It provides a distributed ion trap system, which installs ion traps and atomic generators through a polygonal cylinder shell, integrates DC filtering circuits and radio frequency resonance circuits, adopts an integrated laser sputtering atom generator, and provides standard electrical interfaces and rich laser path windows.

Benefits of technology

It realizes a plug-and-play ion trap system, simplifies the installation and use process, improves the safety, reliability and performance stability of the system, and is suitable for use in ultra-low temperature distributed ion trap quantum computers.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN113962396B_ABST
    Figure CN113962396B_ABST
Patent Text Reader

Abstract

The present invention belongs to the technical field of quantum computing, and provides a distributed ion trap system, comprising: a housing, the housing being a polygonal cylinder, with an upper cover plate and a mounting plate respectively installed at both ends of the housing; an ion trap is installed inside the housing, and an atomic generator is installed on the housing; the atomic generator generates atoms that enter the ion trap for confinement, several laser windows are arranged on the side surface of the housing, and laser window sheets are assembled on the laser windows. A set of plug-and-play ion trap system is provided, which adopts an integrated laser sputtering atomic generator and is particularly suitable for application in an ultra-low temperature ion trap system; the circuit is integrally designed, and the ion trap device does not need to add too many peripheral circuits, making the system safer and more reliable; rich laser path windows are provided, and the ion trap bracket is optimized in design, greatly increasing the angle of laser entering the trap.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present invention belongs to the technical field of quantum computing, and particularly relates to a distributed ion trap system. Background Art

[0002] In the field of quantum computing, the ion trap technology based on trapped ions is the mainstream technology for realizing quantum computing. It uses ions cooled to the ground state as quantum bits, and manipulates and reads the quantum bits through lasers. In order to improve the trapping stability of ions and extend the coherence time of quantum bits, the ion trap is often placed in an ultra-high vacuum chamber. In order to further reduce the collision of gas molecules with the trapped ions, the ion trap is cooled to the liquid helium temperature range by cryogenic technology, which has been applied in the industry. The ion trap in the liquid helium temperature range can, on the one hand, further improve the vacuum degree of the vacuum chamber and reduce the residual gas molecules, and on the other hand, can reduce the heating of the ion crystal, increase the duration of the ion crystal, and thus extend the coherence time of the quantum bit, greatly improving the fidelity of the quantum logic gate.

[0003] The quantum computing system using ion trap technology has the problem of great difficulty in scaling up, which is mainly reflected in: 1. The number of ions trapped by a single ion trap is limited, generally less than 100, so the number of quantum bits of a single ion trap is not large. 2. After the number of ions trapped by the ion trap increases, the control complexity of the ion trap increases, and the trapping stability of the ions decreases, resulting in an increase in the error rate of the system. 3. The trapped ions in the linear ion trap are linearly arranged, and the implementation of two-qubit logic gates can only rely on adjacent ions, and it is difficult to implement two-qubit logic gates for any two ions.

[0004] The distributed ion trap quantum computer is one of the main paths to realize the scaling up of ion trap quantum computers. The distributed ion trap quantum computer connects several independently operating ion trap modules through photon interconnection technology, and realizes the interconnection calculation of multiple ion traps through photon entanglement of the calculation results of each ion trap. In theory, the number of quantum bits of quantum computing can be infinitely expanded to realize the scaling up of quantum computers.

[0005] Therefore, there is an urgent need for a distributed ion trap system to solve the problem of great difficulty in scaling up of the quantum computing system using ion trap technology. Summary of the Invention

[0006] In order to solve the above technical problems, the present invention provides a distributed ion trap system, including: a housing, the housing is a polygonal cylinder, and upper covers and mounting plates are respectively installed at both ends of the housing; an ion trap is installed inside the housing, and an atomic generator is installed on the housing; the atomic generator generates atoms and traps them in the ion trap, and several laser windows are arranged on the side of the housing, and laser window sheets are assembled on the laser windows.

[0007] Optionally, the ion trap includes a bracket and a plurality of blades. The blades are fixedly mounted on the bracket and form a trapping channel. A signal source inputs into the blades to form a trapping electric field, and the trapping channel traps atoms.

[0008] Optionally, the bracket has a bottom plate, and a plurality of tool holders are arranged on the bottom plate. The blades are mounted on the tool holders; a plurality of circuits are arranged on the tool holders, the circuits are electrically connected to the blades, and the signal source inputs into the blades through the circuits.

[0009] Optionally, the tool holder is formed with a rectangular through slot for fitting and mounting the blade.

[0010] Optionally, an inlet hole for the trap is arranged on the tool holder, and the emission port of the atomic generator is directly opposite to the inlet hole for the trap.

[0011] Optionally, the signal source includes a direct current (DC) signal and a radio frequency (RF) signal. The housing is equipped with a first connector and a second connector. The blades are divided into a first blade and a second blade. The first connector is connected to a DC filter board to input the DC signal into the first blade, and the second connector is connected to an RF resonance board to input the RF signal into the second blade.

[0012] Optionally, both the bottom plate and the tool holder are made of ceramic.

[0013] Optionally, the mounting plate is connected to a heat conducting plate, and the heat conducting plate contacts a cold source.

[0014] Optionally, the upper cover plate is provided with an objective window. The objective window extends towards the mounting plate side to form a boss, and an objective window glass is assembled on the objective window.

[0015] Optionally, the housing, the upper cover plate and the mounting plate are made of non-magnetic metal.

[0016] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0017] 1. A plug-and-play ion trap system is provided, which can be directly applied to a cryogenic distributed ion trap quantum computer with only simple installation.

[0018] 2. The DC filter circuit and the RF resonance circuit around the ion trap device are integrally designed, and the ion trap device does not need to add too many peripheral circuits, making the system safer and more reliable.

[0019] 3. An integrated laser sputtering atomic generator is adopted, and atomic generation can be achieved only by connecting a single laser optical fiber, which is particularly suitable for application in a cryogenic ion trap system.

[0020] 4. Standard electrical interfaces are provided, which are convenient for installation and use.

[0021] 5. Provide a rich laser path window and optimize the design of the ion trap bracket, greatly increasing the angle of laser entering the trap.

[0022] 6. Provide a concave objective lens window, which can improve the efficiency of ion fluorescence collection, and then improve the efficiency of ion detection, manipulation and reading. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the overall structure of the distributed ion trap system of the present invention;

[0024] Figure 2 It is an exploded schematic diagram of the overall structure of the distributed ion trap system of the present invention;

[0025] Figure 3 It is a front view schematic diagram of the distributed ion trap system of the present invention;

[0026] Figure 4 It is Figure 3 partial view in the direction of A-A of ;

[0027] Figure 5 It is Figure 3 partial view in the direction of B-B of ;

[0028] Figure 6 It is a three-dimensional structure schematic diagram of the ion trap of the present invention;

[0029] Figure 7 It is a left view schematic diagram of the ion trap of the present invention;

[0030] Figure 8 It is a three-dimensional structure schematic diagram of the tool holder of the present invention;

[0031] Figure 9 It is a front view schematic diagram of the tool holder of the present invention;

[0032] Figure 10 It is a three-dimensional structure schematic diagram of the shielding case of the present invention;

[0033] Figure 11 It is an exploded schematic diagram of the shielding case of the present invention;

[0034] Figure 12 It is a front view schematic diagram of the shielding case of the present invention;

[0035] Figure 13 It is Figure 12 partial sectional view in the direction of A-A of ;

[0036] Figure 14 It is a rear view schematic diagram of the shielding case of the present invention;

[0037] Figure 15Schematic diagram of the overall structure of the atomic generator of the present invention;

[0038] Figure 16 is Figure 15 A-A cross-sectional schematic view of.

[0039] Illustration:

[0040] 10. Ion trap; 20. Atomic generator; 30. DC filter board; 40. RF resonance board; 50. Through slot; 60. Temperature sensor;

[0041] 12. First connector; 13. Second connector; 21. Fiber optic coupler; 22. Collimator; 23. Laser focusing lens; 24. Laser mirror; 25. Atomic target; 26. Laser passage tube; 27. Atomic ejection tube;

[0042] 100. Housing; 101. Upper cover plate; 102. Mounting plate; 103. Laser window; 104. Laser window plate; 105. Heat conducting plate; 106. Objective lens window; 107. Objective lens window plate; 108. Boss; 109. First through hole; 110. Second through hole; 111. Third through hole;

[0043] 200. Bottom plate; 201. Tool holder; 202. Circuit; 203. Frame; 204. Column; 205. Rectangular through slot; 206. Blade; 207. Inlet hole into the trap; 208. First circuit; 209. Second circuit; 210. Inclined plane; 211. Fourth through hole; 212. Trapping channel; 213. First blade; 214. Second blade. Detailed implementation manners

[0044] In order to make the objectives, technical solutions and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0045] In the description of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the accompanying drawings. It is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be construed as a limitation to the present invention.

[0046] In addition, in the description of the present invention, unless otherwise clearly defined and limited, terms such as "installation", "connection", and "coupling" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can also be the communication inside two components. It can be a wireless connection or a wired connection. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0047] In addition, the technical features involved in different embodiments of the present invention described hereinafter can be combined with each other as long as they do not conflict with each other.

[0048] For example Figures 1 - 16 , an embodiment of the present invention provides a distributed ion trap system, including: a housing 100, the housing 100 is a polygonal cylinder, and an upper cover plate 101 and a mounting plate 102 are respectively installed at both ends of the housing 100; an ion trap 10 is installed inside the housing 100 by being fastened to the mounting plate 102 with bolts, and an atom generator 20 is installed on one side surface of the housing 100; the atom generator 20 can generate atoms, and the atoms enter the ion trap 10 through an inlet hole 207. The ion trap 10 is energized to generate a trapping electric field to ionize and trap the atoms in a trapping channel 212. A plurality of laser windows 103 are further provided on the side surface of the housing 100, and laser window sheets 104 are assembled on the laser windows 103. Laser can enter the ion trap 10 through the laser window sheets 104 to manipulate the trapped ions. Specifically,

[0049] For example Figure 11 as shown, the housing 100 is a symmetric hollow cylinder in the shape of an octagon. The housing 100 is made of oxygen-free copper, stainless steel, or other non-magnetic metals. Preferably, the housing 100 is made of oxygen-free copper, which is beneficial to the processing and forming of the housing 100 and heat conduction, and also prevents the housing 100 from being magnetized after the ion trap device is energized, which affects the calculation results of the quantum computer. The lower side of the housing 100 is tightly installed on the mounting plate 102, and the upper side of the housing 100 is assembled with the upper cover plate 101 to form a closed shielding shell to meet the operating environment of the ion trap device.

[0050] Furthermore, the mounting plate 102 can be made of oxygen-free copper, stainless steel, or other non-magnetic metals, and has good heat conduction performance. Preferably, the mounting plate 102 is made of oxygen-free copper, which is conducive to transferring the heat of the ion trap device to the bottom heat conduction plate 105 for cooling; at the same time, it can also prevent the mounting plate 102 from being magnetized after the ion trap device is powered on, which may affect the calculation results of the quantum computer. The mounting plate 102 is connected to the heat conduction plate 105, and the heat conduction plate 105 contacts the cold source. The heat conduction plate 105 can be made of oxygen-free copper and has good heat transfer effect. The heat conduction plate 105 quickly conducts the heat generated by the housing 100 or other components inside the housing 100, and cools it through the cold source, so that the ion trap device is in an ideal working state. Among them, the cold source can be air cooling, liquid nitrogen cooling, or other forms of cold source.

[0051] Furthermore, the upper cover plate 101 can be made of oxygen-free copper, stainless steel, or other non-magnetic metals. Preferably, the mounting plate 102 is made of oxygen-free copper, which is conducive to conducting heat to the housing 100 and also prevents the upper cover plate 101 from being magnetized after the ion trap device is powered on, which may affect the calculation results of the quantum computer. The upper cover plate 101 is provided with an objective lens window 106, and the objective lens window 106 is assembled with an objective lens window piece 107, and the objective lens window piece 107 is made of a fused quartz window piece. The objective lens window 106 is used to observe the working conditions of the ion trap 10 inside the housing 100 and provides a channel for the laser to enter the ion trap 10 axially from the ion trap device. Specifically, the objective lens window 106 forms a convex platform 108 on one side of the upper cover plate 101, and the protruding direction of the convex platform 108 faces the mounting plate 102. Such a design can make the objective lens window 106 closer to the ion trap 10 inside the housing 100, so as to minimize the focal length of the fluorescence collection objective lens, which is conducive to improving the ion fluorescence collection efficiency, and further improving the efficiency of ion detection, manipulation, and reading.

[0052] Furthermore, an anti-reflection film (not shown in the figure) can be attached to the objective lens window 106. Preferably, the anti-reflection film is selected according to the wavelength of the transmitted laser, which can improve the passing rate of the laser and ensure the application effect of the ion trap device.

[0053] Furthermore, the housing 100 is formed with four sides of relatively large area and four sides of relatively small area. Symmetric laser windows 103 are provided on the four sides of relatively large area and two of the sides of relatively small area, and all the laser windows 103 are equipped with laser window plates 104, with the laser windows 103 corresponding to the opposite sides. The laser windows 103 on the four sides of relatively large area are used as optical path channels for Doppler cooling laser, state detection laser, and two-photon Raman transition laser. The center of the laser window plate 104 is aligned with the center of the trapping channel 212 of the ion trap 10, ensuring that each laser beam can directly reach the center of the trapping channel 212 of the ion trap 10. The laser windows 103 on the sides of relatively small area are used as optical path channels for Doppler cooling laser and atomic ionization laser. The center of the laser window plate 104 is aligned with the center of the trapping channel 212 of the ion trap 10, ensuring that each laser beam can directly reach the center of the trapping channel 212 of the ion trap 10. The laser windows 103 provide multiple channels for the laser to enter the ion trap device, greatly increasing the angle of the laser entering the trap.

[0054] Furthermore, the laser window plate 104 can be made of fused quartz and attached with an antireflection film (not shown) consistent with the objective window 106. The antireflection film is preferably selected according to the wavelength of the transmitted laser, which can improve the passing rate of the laser and ensure the use effect of the ion trap device.

[0055] Furthermore, on the other two sides of the smaller sides of the housing 100, a first through hole 109 is provided on one side for installing the first connector 12; a second through hole 110 and a third through hole 111 are provided on the other side. The second through hole 110 is for installing the second connector 13, and the third through hole 111 is for installing the atomic generator 20. Specifically, the first connector 12 is a DC connector for a micro D-sub current DC signal, and the second connector 13 is an RF connector for a SAM RF signal. The DC connector is used to input a DC signal to the internal DC filter board, and the RF connector is used to input an RF signal for ion trapping to the internal RF resonance board 40. The upper connectors integrated in the housing 100 can make the overall ion trap device more intensive and integrated, which is beneficial to the operation safety of the ion trap device and improve its operation stability.

[0056] Furthermore, as Figure 15 and Figure 16As shown, the atomic generator 20 is an integrated laser sputtering atomic generator 20, which includes an optical fiber coupler 21, a collimator 22, a laser focusing lens 23, a laser mirror 24, an atomic target 25, a laser passage tube 26, and an atomic ejection tube 27. The optical fiber coupler 21 and the collimator 22 are of an integrated structure and are fixed to one end of the laser passage tube 26. After the sputtering laser enters the laser passage tube 26 through the optical fiber coupler 21 and the collimator 22, it is focused by the focusing lens and then projected onto the laser mirror 24. The reflected laser enters the atomic ejection tube 27 through a small hole provided between the laser passage tube 26 and the atomic ejection tube 27 and hits the atomic target 25 located inside the atomic ejection tube 27. The atomic target 25 emits an atomic beam under laser irradiation. An atomic ejection micro-hole is provided at the end of the atomic ejection tube 27, and the micro-hole is aligned with the center of the ion trap 10. Atomic beams in all directions are directionally filtered inside the atomic ejection tube 27, and only the atomic beam aligned with the center direction of the ion trap 10 can eject from the micro-hole and pass through the trap entrance hole 207 on the bracket of the ion trap 10 and enter the trapping channel 212 at the center of the ion trap 10.

[0057] In some embodiments, as Figure 6 shown, the ion trap 10 includes a bracket and several blades 206. The blades 206 can be firmly installed on the bracket by bolts. After the blades 206 are enclosed, a trapping channel 212 is formed. When a signal source is input to the blades 206, a trapping electric field can be formed. The trapping electric field ionizes the atoms and traps them in the trapping channel 212, thereby realizing the ion trapping function.

[0058] Furthermore, the bracket includes a bottom plate 200. Several tool holders 201 are provided on the bottom plate 200, and several blades 206 are installed on the tool holders 201; several circuits 202 are arranged on the tool holders 201. The circuits 202 are electrically connected to the blades 206, and the signal source is input to the circuits 202.

[0059] Furthermore, the bottom plate 200 has a rectangular plate structure and is made of an insulating material. Preferably, the insulating material is ceramic. Two tool holders 201 that correspond to each other are provided on the upper surface of the bottom plate 200. The tool holders 201 are also made of an insulating material. Preferably, the insulating material is ceramic. The tool holders 201 can be integrally formed with the bottom plate 200, which can reduce the production process, save production costs, and improve production efficiency.

[0060] Further, the blade 206 can be made of a highly thermally conductive ceramic. Generally, highly thermally conductive ceramic materials are mainly oxides, nitrides, carbides, borides, etc., such as AlN, BeO, Si3N4, SiC, BN, etc. The main function is to provide insulation and heat conduction. Preferably, the blade 206 is made of beryllium oxide ceramic. A conductor layer (not shown) is plated on the surface of the blade 206 to form a signal source path. Preferably, the conductor layer is plated with gold material, and using gold material can ensure the stability of the ion trap device.

[0061] Further, as Figure 8 shown, one side of the tool holder 201 is formed into a C-shaped frame 203, and the other side is a column 204. Among them, a rectangular through groove 205 is opened on the back side of the C-shaped frame 203 of the tool holder 201. The rectangular through groove 205 is provided for the blade 206 to pass through the frame 203 for installation; an inlet trap hole 207 is provided on the column 204 side of the tool holder 201. The inlet trap hole 207 is a channel for the atoms generated by the atomic generator 20 to enter the ion trap 10. The tool holder 201 of the C-shaped frame 203 increases the laser incident angle range of 45 degrees while ensuring reliable fixation of the blade 206.

[0062] Further, two circuits 202 are arranged on the outer side of the tool holder 201 connecting the bottom plate 200. Among them, the first circuit 208 leads from the bottom plate 200 to the lower inner side of the C-shaped frame 203 of the tool holder 201, and the second circuit 209 leads from the bottom plate 200 through the column 204 side of the tool holder 201 to the upper inner side of the C-shaped frame 203. Similarly, the tool holder 201 on the corresponding side has the same circuit 202 arrangement, and the only difference is that the two circuits 202 are in a swapped form, that is, the second circuit 209 leads from the bottom plate 200 to the lower inner side of the C-shaped frame 203 of the tool holder 201, and the first circuit 208 leads from the bottom plate 200 through the column 204 side of the tool holder 201 to the upper inner side of the C-shaped frame 203. The intensive circuit setting can reduce the external circuit of the ion trap device and improve the safety and reliability of the ion trap device.

[0063] Further, two symmetric inclined surfaces 210 are formed on both the upper and lower inner sides of the C-shaped frame 203 of the tool holder 201. Two fourth through holes 211 are machined on the inclined surfaces 210. The tool holder 201 on the corresponding side also has the same inclined surfaces 210 and fourth through holes 211. The blade 206 can pass through the rectangular through groove 205 and then be installed with bolts through the fourth through holes 211. The cutting edge faces the tool holder 201 on the corresponding side. After the four blades 206 are enclosed, a trapping channel 212 is formed. After the blade 206 is connected to the signal source, the blade 206 forms a trapping electric field to trap ions in the trapping channel 212.

[0064] Furthermore, the blade 206 can be divided into a first blade 213 and a second blade 214, and the signal source is divided into a radio frequency signal and a direct current signal. The first blade 213 inputs the direct current signal through the first connector 12, and the second blade 214 inputs the radio frequency signal through the second connector 13, which can meet the implementation of the ion trap device. In fact, the structures of the two groups of blades 206 can be exactly the same. In this way, the interchangeability between various spare parts will be higher, which is more conducive to the large-scale production of the ion trap device.

[0065] In some embodiments, the first connector 12 is connected to a DC filter board 30, and the second connector 13 is connected to a radio frequency resonance board 40. Both the DC filter board 30 and the radio frequency resonance board 40 can be fixedly installed on the upper side of the mounting board 102 (i.e., inside the housing 100) by bolts, and the DC filter board 30 is connected to the first blade 213 to input the direct current signal into the first blade 213, and the radio frequency resonance board 40 is connected to the second blade 214 to input the radio frequency signal into the second blade 214.

[0066] In some embodiments, the blade 206 is segmented by micro-machining technology to form micro-slots. Each blade 206 is divided into 5 segments, so that each blade 206 forms 5 electrodes, and each electrode is independent. The 5 electrodes on the first blade 213 are simultaneously connected to the DC filter board 30 through the first circuit 208 arranged on the tool holder 201, and one of the 5 electrodes on the second blade 214 is connected to the radio frequency resonance board 40 through the second circuit 209 arranged on the tool holder 201. Ion trapping is achieved by adjusting the magnitude and frequency of the input signal.

[0067] In some embodiments, 4 through slots 50 are equally arranged on the cutting edge sides of both the first blade 213 and the second blade 214. The function of the through slots 50 is that when the ion trap device is powered on, the position of the through slots 50 can make a more stable voltage be formed between the pole pieces, so as to form a stable trapping electric field in the trapping channel 212 to trap ions, which can further improve the trapping efficiency of the ion trap device.

[0068] Furthermore, the DC filter board 30 is a printed circuit board, which integrates 10-way DC filter circuits and can filter the input DC signal to eliminate harmonics and interference signals in the DC signal. The input end of the DC filter board 30 is connected to the first connector 12, and the output end is welded to the DC signal circuit welding point on the tool holder 201 and finally connected to the electrode on the first blade 213. This simplifies the circuit connection and prevents problems such as short circuits and open circuits caused by messy wiring.

[0069] Furthermore, the RF resonant plate 40 is a printed circuit board, and a RF resonant circuit is provided, which can perform narrow-band pass filtering on the RF signal, and at the same time, impedance matching is performed between the RF signal source and the ion trap 10, so as to ensure that the RF signal can be absorbed by the electrode of the ion trap 10 to the maximum extent, and eliminate the reflected signal. The input end of the RF resonant plate 40 is connected to the second connector 13, and the output end is connected to the RF signal circuit welding point on the tool holder 201. The circuit connection is simplified to prevent problems such as short circuit and open circuit caused by messy wiring.

[0070] In some embodiments, the distributed ion trap system is equipped with a temperature sensor 60, which is a thermistor fixed on the mounting plate 102 and located inside the housing 100. The temperature sensor 60 has two working modes: first, the temperature detection mode, the resistance of the thermistor itself changes with the temperature, a low-voltage power supply is loaded to both ends of the thermistor, and the resistance value can be obtained by measuring the current value, and then the temperature of the measuring point can be calculated; second, the heater mode, a large current is loaded to both ends of the resistor, which can produce an Ohm effect, convert electrical energy into thermal energy, and heat the ion trap 10. The heater mode can be used to control the temperature of the ion trap 10 to adjust the working temperature of the ion trap 10 to a more ideal state.

[0071] In some embodiments, the distributed ion trap system of the present invention is applied to a distributed ion trap quantum computer. The distributed ion trap system can be installed in a low-temperature vacuum chamber in a closed space. The heat conductive plate 105 is directly connected to the low-temperature cold source to form a cold screen, which can effectively condense and adsorb the residual gas in the vacuum chamber to form an ultra-high vacuum around the ion trap device. In addition, a radiation shielding layer can be set in the low-temperature vacuum chamber to form a double radiation shielding layer together with the radiation shielding shell of the distributed ion trap system, thereby increasing the duration of the ion crystal, extending the coherence time of the quantum bit, greatly improving the fidelity of the quantum logic gate, and improving the performance stability and working accuracy of the ion trap system.

[0072] The above-mentioned embodiments are only preferred embodiments of the present invention and cannot be used to limit the scope of protection of the present invention. Any non-substantial changes and substitutions made by technicians in this field on the basis of the present invention shall fall within the scope of protection required by the present invention.

Claims

1. A distributed ion trap system, characterized in that, Comprising: A polygonal cylindrical shell, with an upper cover plate and a mounting plate installed at its two ends respectively. A plurality of laser windows are provided on the side surface of the shell, and laser window plates are assembled on the laser windows; An ion trap, installed inside the shell; and An atomic generator, installed on the shell, including a fiber optic coupler, a collimator, a laser focusing lens, a laser mirror, an atomic target, a laser passage tube, and an atomic injection tube. Wherein, The fiber optic coupler and the collimator are integrally fixed at the inlet end of the laser passage tube, and are used to collimate the sputtering laser and introduce it into the laser passage tube; The laser focusing lens and the laser mirror are arranged inside the laser passage tube, and a small hole is provided between the laser passage tube and the atomic injection tube, which is used to focus and reflect the introduced sputtering laser, and the reflected sputtering laser enters the atomic injection tube through the small hole; The atomic target is arranged inside the atomic injection tube, and an atomic injection micro-hole aligned with the center of the ion trap is provided at the end of the atomic injection tube, which is used to eject an atomic beam towards the center of the ion trap, and the atomic beam passes through the trap inlet hole on the ion trap support and enters the trapping channel at the center of the ion trap. Wherein, the sputtering laser entering the atomic injection tube through the small hole hits the atomic target, and the atomic target emits atomic beams in all directions under the irradiation of the sputtering laser. The emitted atomic beams are directionally filtered through the atomic injection micro-hole in the atomic injection tube, so that the atomic beam aligned with the center of the ion trap is ejected from the atomic injection micro-hole.

2. The distributed ion trap system according to claim 1, wherein The ion trap includes a support and a plurality of blades. The blades are firmly installed on the support and form a trapping channel. A signal source inputs into the blades to form a trapping electric field, and the trapping channel traps atoms.

3. The distributed ion trap system according to claim 2, characterized in that, The support has a bottom plate, and a plurality of tool holders are provided on the bottom plate, and the blades are installed on the tool holders; a plurality of circuits are arranged on the tool holders, and the circuits are conducted with the blades, and the signal source inputs into the blades through the circuits.

4. The distributed ion trap system according to claim 3, wherein The tool holder forms a rectangular through slot, and the through slot is used to cooperate with the installation of the blade.

5. The distributed ion trap system according to claim 3, wherein A trap inlet hole is provided on the tool holder, and the emission port of the atomic generator is directly opposite to the trap inlet hole.

6. The distributed ion trap system according to claim 3, wherein The signal source includes a direct current signal and a radio frequency signal. The shell is installed with a first connector and a second connector. The blades are divided into a first blade and a second blade. The first connector connects a DC filter board to input the direct current signal into the first blade, and the second connector connects a radio frequency resonance board to input the radio frequency signal into the second blade.

7. The distributed ion trap system according to claim 3, wherein Both the bottom plate and the tool holder are made of ceramic.

8. The distributed ion trap system according to claim 1, characterized in that, The mounting plate is connected to a heat conducting plate, and the heat conducting plate contacts a cold source.

9. The distributed ion trap system according to claim 1, wherein The upper cover plate is provided with an objective window, and the objective window extends towards the mounting plate side to form a boss, and an objective window plate is assembled on the objective window.

10. The distributed ion trap system according to claim 1, wherein The shell, the upper cover plate and the mounting plate are made of non-magnetic metal.

Citation Information

Patent Citations

  • Ion trap system

    CN113345617A

  • Ion loading system and method

    CN113421687A

  • Distributed ion trap system

    CN216286754U