Semiconductor device and method of manufacturing the same, three-dimensional integrated circuit

Abstract

The application relates to the technical field of semiconductors, and discloses a semiconductor device, a preparation method thereof and a three-dimensional integrated circuit. The semiconductor device comprises a substrate and a TSV structure; the substrate is provided with a groove; the TSV structure is arranged on the substrate, a first end of the TSV structure is exposed in the groove, and the distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove. The first end of the TSV structure is exposed, which facilitates heat dissipation; the distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove, that is, the first end of the TSV structure is recessed in the groove, and does not affect other structures.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more particularly to a semiconductor device, a method for fabricating the semiconductor device, and a three-dimensional integrated circuit including the semiconductor device. Background Technology

[0002] Currently, with the development of technology, 3D integrated circuits can achieve high transmission speeds and chip-level miniaturization packaging, meeting the trend of lightweight and thin portable electronic products, and are receiving increasing attention. However, their application range is limited due to the poor heat dissipation effect of their multi-chip packages.

[0003] Therefore, it is necessary to study a new semiconductor device and a method for fabricating the semiconductor device, as well as a three-dimensional integrated circuit including the semiconductor device.

[0004] The information disclosed in the background section is only for enhancing the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0005] The purpose of this invention is to overcome the shortcomings of the poor heat dissipation effect of the prior art and to provide a semiconductor device, a method for manufacturing the semiconductor device, and a three-dimensional integrated circuit including the semiconductor device.

[0006] Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention.

[0007] According to one aspect of this disclosure, a semiconductor device is provided, comprising:

[0008] A substrate having grooves provided thereon;

[0009] A TSV structure is disposed on the substrate, with the first end of the TSV structure exposed in the groove, and the distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove.

[0010] In one exemplary embodiment of this disclosure, the substrate includes:

[0011] A substrate having a first groove thereon, with the first end exposed within the first groove;

[0012] A first insulating layer is disposed on the substrate, and a first blind hole concentric with the first groove is provided on the first insulating layer. The first blind hole exposes at least a portion of the first end of the TSV structure exposed on the substrate to the first insulating layer.

[0013] In one exemplary embodiment of this disclosure, the substrate includes:

[0014] A substrate, wherein the first end of the TSV structure is exposed on the substrate;

[0015] A first insulating layer is disposed on the substrate, and a first blind via is provided on the first insulating layer, the first blind via exposing at least a portion of the first end of the TSV structure exposed on the substrate to the first insulating layer.

[0016] In one exemplary embodiment of this disclosure, the semiconductor device further includes:

[0017] A thermally conductive layer assembly is disposed within the first blind hole. The thermally conductive layer assembly is in contact with at least the end face of the first end of the TSV structure. The thickness of the thermally conductive layer assembly decreases as the distance from the end face of the first end increases.

[0018] A heat dissipation layer assembly is connected to the heat conduction layer assembly and extends away from the TSV structure.

[0019] In one exemplary embodiment of this disclosure, the first end of the TSV structure exposed on the substrate is exposed to the first insulating layer;

[0020] The thermally conductive layer assembly includes:

[0021] The first heat-conducting layer is configured as a bottomed cylindrical shape and is sleeved on the first end;

[0022] The second thermal conductive layer is configured as a bottomed cylindrical shape and is sleeved on the side of the first thermal conductive layer away from the TSV structure.

[0023] A third thermally conductive layer is disposed on the side of a portion of the second thermally conductive layer away from the TSV structure;

[0024] The heat dissipation layer assembly includes:

[0025] The first heat dissipation layer is connected to the edge of the cylinder wall of the first heat-conducting layer and is located on the side of the first insulating layer away from the substrate.

[0026] The second insulating layer is located on the side of the first heat dissipation layer closest to the TSV structure;

[0027] The second heat dissipation layer is connected to the edge of the cylinder wall of the second heat-conducting layer and is located on the side of the second insulating layer away from the substrate.

[0028] The third insulating layer is located on the side of the second heat dissipation layer closest to the TSV structure;

[0029] The third heat dissipation layer is connected to the edge of the third thermally conductive layer and is located on the side of the third insulating layer away from the substrate.

[0030] In one exemplary embodiment of this disclosure, the end face of the TSV structure exposed at the first end of the substrate is exposed to the first insulating layer;

[0031] The thermally conductive layer assembly includes:

[0032] A thermally conductive layer is in contact with the end face of the first end of the TSV structure;

[0033] The heat dissipation layer assembly includes:

[0034] A heat dissipation layer is connected to the edge of the heat-conducting layer and is located on the side of the first insulating layer closer to the TSV structure.

[0035] In one exemplary embodiment of this disclosure, the semiconductor device further includes:

[0036] Multiple heat sinks, each heat sink being configured as a bottomed cylindrical shape having a bottom wall and side walls, the bottom wall being connected to the end of the heat dissipation layer assembly away from the TSV structure, and the side walls extending away from the TSV structure.

[0037] In one exemplary embodiment of this disclosure, at least one of the heat sinks is connected between two adjacent heat dissipation layer groups of the TSV structure.

[0038] In one exemplary embodiment of this disclosure, the semiconductor device further includes:

[0039] A dielectric layer is disposed on the side of the heat dissipation layer group away from the TSV structure;

[0040] A metallic barrier layer is disposed on the side of the dielectric layer away from the TSV structure.

[0041] According to one aspect of this disclosure, a three-dimensional integrated circuit is provided, comprising:

[0042] The semiconductor device described in any of the above.

[0043] According to one aspect of this disclosure, a method for fabricating a semiconductor device is provided, comprising:

[0044] A substrate is provided, on which a TSV structure is disposed;

[0045] The substrate is patterned to form a groove, so that the first end of the TSV structure is exposed in the groove, and the distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove.

[0046] In one exemplary embodiment of this disclosure, a substrate is provided, and patterning the substrate to form grooves includes:

[0047] A substrate is provided, wherein a first groove is provided on the substrate, and the first end is exposed in the first groove;

[0048] A first insulating material layer is formed on the substrate, and the first insulating material layer is patterned to form a first insulating layer and a first blind hole concentric with the first groove, the first blind hole exposing at least a portion of the first end of the TSV structure exposed on the substrate to the first insulating layer.

[0049] In one exemplary embodiment of this disclosure, the preparation method further includes:

[0050] A substrate is provided, and the substrate is patterned to form grooves, including:

[0051] A substrate is provided, wherein a first end of the TSV structure is exposed on the substrate.

[0052] A first insulating material layer is formed on the substrate and at the first end of the TSV structure, and the first insulating material layer is patterned to form a first insulating layer and a first blind via, wherein the first blind via exposes at least a portion of the first end of the TSV structure exposed on the substrate to the first insulating layer.

[0053] In one exemplary embodiment of this disclosure, the preparation method further includes:

[0054] A thermally conductive layer group and a heat dissipation layer group are formed. The thermally conductive layer group is located within the first blind hole. The thermally conductive layer group is in contact with at least the end face of the first end of the TSV structure. The thickness of the thermally conductive layer group decreases as the distance from the end face of the first end increases. The heat dissipation layer group is connected to the thermally conductive layer group and extends away from the TSV structure.

[0055] In one exemplary embodiment of this disclosure, the first end of the TSV structure exposed on the substrate is exposed to the first insulating layer; a thermally conductive layer group and a heat dissipation layer group are formed, including:

[0056] A first thermally conductive material layer is formed at the first end of the TSV structure and on the side of the first insulating layer away from the substrate. The first thermally conductive material layer is patterned to form a first thermally conductive layer and a first heat dissipation layer. The first thermally conductive layer is formed as a bottomed cylindrical shape and is sleeved on the first end. The first heat dissipation layer is connected to the edge of the cylindrical wall of the first thermally conductive layer and is located on the side of the first insulating layer away from the substrate.

[0057] A second insulating material layer is formed on the side of the first thermally conductive layer, the first heat dissipation layer, and the first insulating layer away from the substrate. The second insulating material layer is patterned to form a second blind hole and a second insulating layer. The orthographic projection of the second blind hole on the substrate at least partially overlaps with the orthographic projection of the first thermally conductive layer on the substrate, so that at least part of the first thermally conductive layer is exposed.

[0058] A second thermally conductive material layer is formed on the side of the second insulating layer and the first thermally conductive layer away from the substrate. The second thermally conductive material layer is patterned to form a second thermally conductive layer and a second heat dissipation layer. The second thermally conductive layer is formed as a bottomed cylindrical shape and is sleeved on the side of the first thermally conductive layer away from the TSV structure. The second heat dissipation layer is connected to the edge of the cylindrical wall of the second thermally conductive layer and is located on the side of the second insulating layer away from the substrate.

[0059] A third insulating material layer is formed on the side of the second thermal conductive layer, the second heat dissipation layer and the second insulating layer away from the substrate, and the third insulating material layer is patterned to form a third blind hole and a third insulating layer. The orthographic projection of the third blind hole on the substrate overlaps at least partially with the orthographic projection of the second thermal conductive layer on the substrate, so that at least part of the second thermal conductive layer is exposed.

[0060] A third thermally conductive material layer is formed on the side of the third insulating layer and the second thermally conductive layer away from the substrate. The third thermally conductive material layer is patterned to form a third thermally conductive layer and a third heat dissipation layer. The third thermally conductive layer is disposed on a portion of the second thermally conductive layer on the side away from the TSV structure. The third heat dissipation layer is connected to the edge of the third thermally conductive layer and is located on the side of the third insulating layer away from the substrate.

[0061] In one exemplary embodiment of this disclosure, the end face of the TSV structure exposed at the first end of the substrate is exposed to the first insulating layer; a thermally conductive layer group and a heat dissipation layer group are formed, including:

[0062] A thermally conductive material layer is formed on the end face of the first insulating layer and the first end of the TSV structure, and the thermally conductive material layer is patterned to form a thermally conductive layer and a heat dissipation layer. The thermally conductive layer is in contact with the end face of the first end of the TSV structure, and the heat dissipation layer is connected to the edge of the thermally conductive layer and is located on the side of the first insulating layer away from the substrate.

[0063] In one exemplary embodiment of this disclosure, the preparation method further includes:

[0064] A fourth insulating material layer is formed on the side of the heat dissipation layer group away from the TSV structure, and the fourth insulating material layer is patterned to form a fourth insulating layer and a plurality of fourth blind holes;

[0065] A fourth thermally conductive material layer is formed on the side of the fourth insulating layer and the plurality of fourth blind holes away from the TSV structure, and the fourth thermally conductive material layer is patterned to form a plurality of heat sinks. Each heat sink is a bottomed cylindrical shape with a bottom wall and a side wall. The bottom wall is connected to the end of the heat dissipation layer group away from the TSV structure, and the side wall extends away from the TSV structure.

[0066] In one exemplary embodiment of this disclosure, at least one of the heat sinks is connected between two adjacent heat dissipation layer groups of the TSV structure.

[0067] In one exemplary embodiment of this disclosure, the preparation method further includes:

[0068] A dielectric layer is formed on the side of the heat dissipation layer group away from the TSV structure;

[0069] A metallic barrier layer is formed on the side of the dielectric layer away from the TSV structure.

[0070] As can be seen from the above technical solution, the present invention possesses at least one of the following advantages and positive effects:

[0071] The semiconductor device of the present invention has a groove on a substrate, and the first end of the TSV structure is exposed in the groove. The distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove. On the one hand, the exposed first end of the TSV structure facilitates heat dissipation; on the other hand, the distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove, that is, the first end of the TSV structure is recessed in the groove and will not affect other structures. Attached Figure Description

[0072] The above and other features and advantages of the present invention will become more apparent from a detailed description of exemplary embodiments thereof with reference to the accompanying drawings.

[0073] Figure 1 This is a schematic diagram of the structure of a semiconductor device in related technologies;

[0074] Figure 2 yes Figure 1 A schematic diagram of stress simulation on the substrate.

[0075] Figure 3 This is a schematic diagram of the structure of a first exemplary embodiment of the semiconductor device of the present invention;

[0076] Figure 4This is a schematic diagram of the structure of a second exemplary embodiment of the semiconductor device of the present invention;

[0077] Figure 5 This is a schematic diagram of the structure of a third exemplary embodiment of the semiconductor device of the present invention;

[0078] Figure 6 This is a schematic diagram of the structure of a fourth exemplary embodiment of the semiconductor device of the present invention;

[0079] Figure 7 This is a schematic diagram of the structure of a fifth exemplary embodiment of the semiconductor device of the present invention;

[0080] Figure 8 This is a schematic diagram of the structure of a sixth exemplary embodiment of the semiconductor device of the present invention;

[0081] Figure 9 This is a schematic diagram of the structure of the semiconductor device according to the seventh exemplary embodiment of the present invention;

[0082] Figure 10 This is a schematic diagram of the structure of the semiconductor device of the present invention in the eighth exemplary embodiment;

[0083] Figure 11 This is a schematic diagram of the structure of the ninth exemplary embodiment of the semiconductor device of the present invention;

[0084] Figure 12 This is a schematic flowchart of an example embodiment of the method for fabricating a semiconductor device according to the present invention;

[0085] Figures 13-20 This is a schematic diagram of the structure of each step in an exemplary embodiment of the method for fabricating a semiconductor device according to the present invention;

[0086] Figures 21-26 This is a schematic diagram of the structure of each step in another exemplary embodiment of the method for fabricating the semiconductor device of the present invention;

[0087] Figures 27-32 This is a schematic diagram of the structure of each step in another exemplary embodiment of the method for fabricating the semiconductor device of the present invention.

[0088] The annotations for the main components in the diagram are explained below:

[0089] 1. Substrate; 11. First groove;

[0090] 21. First insulating material layer; 22. Second insulating material layer; 24. Fourth insulating material layer;

[0091] 31. First insulating layer; 32. Second insulating layer; 33. Third insulating layer; 34. Fourth insulating layer;

[0092] 41. First blind hole; 42. Second blind hole; 44. Fourth blind hole;

[0093] 51. First thermally conductive material layer; 52. Second thermally conductive material layer; 54. Fourth thermally conductive material layer; 55. Thermally conductive material layer;

[0094] 61. First thermally conductive layer; 62. Second thermally conductive layer; 63. Third thermally conductive layer; 64. Thermally conductive layer;

[0095] 71. First heat dissipation layer; 72. Second heat dissipation layer; 73. Third heat dissipation layer; 74. Heat dissipation layer;

[0096] 8. Dielectric layer; 9. Metal barrier layer; 10. TSV structure; 12. Heat sink; 13. Dummy TSV structure. Detailed Implementation

[0097] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that the invention will be thorough and complete, and the concept of the exemplary embodiments will be fully conveyed to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and therefore their detailed description will be omitted.

[0098] Reference Figure 1 The schematic diagram of the semiconductor device in the related technology shown illustrates that, in order to enhance the heat dissipation effect of the multi-chip package, some products use dummy TSV structures 13 on the substrate 1 as an auxiliary. The substrate 1 is made of silicon, and heat is conducted through the columnar metal of the dummy TSV structures 13. However, the simple dummy TSV structures 13 do not have a significant heat dissipation effect at the ends. (Refer to...) Figure 2 shown Figure 1 The diagram shows a stress simulation of the substrate 1, with the numbers representing the stress at various points on the substrate 1. Since the coefficient of thermal expansion of the metal of the dummy TSV structure 13 is much greater than that of the substrate 1, poor heat dissipation efficiency of the chip may cause the dummy TSV structure 13 to expand thermally, thus applying stress to the substrate 1, which in turn causes deformation of the substrate 1 and the overall structure, and causes the device characteristics to drift.

[0099] This exemplary implementation first provides a semiconductor device, referring to... Figure 3 As shown, the semiconductor device may include a substrate and a TSV structure 10, which is also a dummy TSV structure 13. The TSV structure 10 mentioned below is also a dummy TSV structure 13. A groove is provided on the substrate. The TSV structure 10 is disposed on the substrate, and the first end of the TSV structure 10 is exposed in the groove, and the distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove.

[0100] In this example embodiment, the substrate can be a substrate 1 made of silicon. A first groove 11 is provided on the substrate 1, and the first end of the TSV structure 10 is exposed in the first groove 11, that is, the distance between the end face of the first end of the TSV structure 10 and the bottom wall of the first groove 11 is less than the depth of the first groove 11, so that the first end is recessed in the substrate 1.

[0101] In other exemplary embodiments of the present invention, reference is made to Figure 4 As shown, the substrate may include a substrate 1 and a first insulating layer 31; the substrate 1 may be a silicon substrate. A first groove 11 is formed on the substrate 1, and the first end of the TSV structure 10 is exposed in the first groove 11, that is, the distance between the end face of the first end of the TSV structure 10 and the bottom wall of the first groove 11 is less than the depth of the first groove 11, so that the first end is recessed in the substrate 1. The first insulating layer 31 is disposed on the substrate 1, and a first blind hole 41 concentric with the first groove 11 is formed on the first insulating layer 31. The first end of the TSV structure 10 exposed on the substrate 1 protrudes beyond the bottom wall of the first blind hole 41, that is, a portion of the first end of the TSV structure 10 is exposed in the first insulating layer 31, so that the bottom of the first blind hole 41 forms an annular shape. The distance between the end face of the first end of the TSV structure 10 and the bottom wall of the first blind hole 41 is less than the depth of the first blind hole 41.

[0102] Additionally, in other exemplary embodiments of the present invention, reference is made to... Figure 5 As shown, the substrate may include a substrate 1 and a first insulating layer 31. The substrate 1 may be a silicon substrate. The first end of the TSV structure 10 protrudes beyond the substrate 1, meaning that the first end of the TSV structure 10 is exposed on the substrate 1 because it protrudes beyond the substrate 1. The first insulating layer 31 is disposed on the substrate 1, and a first blind via 41 is provided on the first insulating layer 31. The first blind via 41 exposes the portion of the first end of the TSV structure 10 exposed on the substrate 1 to the first insulating layer 31. In this example embodiment, the thickness of the first insulating layer 31 is greater than that of the substrate 1. Figure 4 The thickness of the first insulating layer 31 is greater than the height of the first end of the TSV structure 10 exposed on the substrate 1, so that the distance between the end face of the exposed first end of the TSV structure 10 and the bottom wall of the first blind hole 41 is less than the depth of the first blind hole 41.

[0103] The first end of the TSV structure 10 is exposed to facilitate heat dissipation; the distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove, that is, the first end of the TSV structure 10 is recessed in the groove and will not affect other structures.

[0104] In another example embodiment, the semiconductor device may further include a thermally conductive layer group and a heat dissipation layer group; the thermally conductive layer group is disposed within the first blind via 41, and the thermally conductive layer group is in contact with at least the end face of the first end of the TSV structure 10, and the thickness of the thermally conductive layer group decreases as the distance from the end face of the first end increases; the heat dissipation layer group is connected to the thermally conductive layer group and extends away from the TSV structure 10.

[0105] For example, the heat-conducting layer group can be configured as three layers, namely the first heat-conducting layer 61, the second heat-conducting layer 62 and the third heat-conducting layer 63; the heat dissipation layer group is also configured as three layers, namely the first heat dissipation layer 71, the second heat dissipation layer 72 and the third heat dissipation layer 73; an insulating layer is provided between adjacent heat-conducting layers and heat dissipation layers.

[0106] Reference Figure 6 and Figure 7 As shown, specifically: the first thermally conductive layer 61 can be configured as a bottomed cylindrical shape, and the depth of the first thermally conductive layer 61 is the same as the length of the TSV structure 10 exposed above the first insulating layer 31. The first thermally conductive layer 61 is sleeved on the first end of the TSV structure 10, that is, the end of the TSV structure 10 exposed above the first insulating layer 31. The bottom wall of the first thermally conductive layer 61 contacts the end face of the first end of the TSV structure 10, and the side wall of the first thermally conductive layer 61 contacts the side surface of the TSV structure 10. The first thermally conductive layer 61 completely covers the portion of the TSV structure 10 exposed above the first insulating layer 31.

[0107] The first heat dissipation layer 71 is connected to the edge of the cylindrical wall of the first heat-conducting layer 61. The first heat dissipation layer 71 can be configured as a cylindrical shape with a ring, that is, the first heat dissipation layer 71 may include a first heat dissipation ring and a first heat dissipation cylinder. The first heat dissipation ring is located on the bottom wall of the first blind hole 41, the inner ring surface of the first heat dissipation ring is connected to the edge of the cylindrical wall of the first heat-conducting layer 61, and the outer ring surface of the first heat dissipation ring is connected to the first heat dissipation cylinder. The first heat dissipation cylinder is located on the side of the first insulating layer 31 away from the substrate 1. The first heat dissipation cylinder extends away from the TSV structure 10.

[0108] A second insulating layer 32 is provided on the side of the first heat dissipation layer 71 near the TSV structure 10. The second insulating layer 32 does not completely cover the first heat-conducting layer 61, but only covers the end of the first heat-conducting layer 61 that is connected to the first heat dissipation layer 71. Of course, if the first heat dissipation ring is wide, the second insulating layer 32 may not be connected to the first heat-conducting layer 61 at all. The second insulating layer 32 may also be provided on the side of the first insulating layer 31 outside the first blind hole 41 away from the substrate 1.

[0109] A second thermally conductive layer 62 is disposed on the side of the first thermally conductive layer 61 away from the TSV structure 10. The second thermally conductive layer 62 is also configured as a bottomed cylindrical shape, and its depth is the same as the length of the first thermally conductive layer 61 exposed in the second insulating layer 32. The second thermally conductive layer 62 is fitted onto a portion of one end of the first thermally conductive layer 61, that is, the end of the first thermally conductive layer 61 exposed in the second insulating layer 32. The bottom wall of the second thermally conductive layer 62 contacts the bottom wall of the first thermally conductive layer 61, and the sidewalls of the second thermally conductive layer 62 contact the sidewalls of the first thermally conductive layer 61. The second thermally conductive layer 62 completely covers the portion of the first thermally conductive layer 61 exposed in the second insulating layer 32.

[0110] The second heat dissipation layer 72 is connected to the edge of the cylindrical wall of the second heat-conducting layer 62. The second heat dissipation layer 72 can be cylindrical, that is, the cylindrical wall of the second heat dissipation layer 72 is connected to the cylindrical wall of the second heat-conducting layer 62, and the second heat dissipation layer 72 is located on the side of the second insulating layer 32 closer to the TSV structure 10. The second heat dissipation layer 72 extends away from the TSV structure 10.

[0111] A third insulating layer 33 is provided on the side of the second heat dissipation layer 72 closest to the TSV structure 10. That is, the third insulating layer 33 does not completely cover the second heat-conducting layer 62, but only covers the end of the second heat-conducting layer 62 connected to the second heat dissipation layer 72, leaving the bottom wall of the second heat-conducting layer 62 exposed to the third insulating layer 33. Of course, if the first heat dissipation ring is relatively wide, only part of the sidewalls and bottom wall of the second heat-conducting layer 62 may be exposed to the third insulating layer 33. The third insulating layer 33 can also be provided on the side of the second insulating layer 32 outside the first blind hole 41 away from the substrate 1.

[0112] A third thermally conductive layer 63 is provided on the side of the second thermally conductive layer 62 away from the TSV structure 10. The third thermally conductive layer 63 is in sheet form and contacts the bottom wall of the second thermally conductive layer 62. The third thermally conductive layer 63 completely covers the portion of the second thermally conductive layer 62 exposed to the third insulating layer 33.

[0113] The third heat dissipation layer 73 can be configured as a cylinder. The third heat dissipation layer 73 is connected to the edge of the third heat conduction layer 63 and is located on the side of the third insulating layer 33 away from the substrate 1. The third heat dissipation layer 73 extends away from the TSV structure 10, that is, the edge of the third heat dissipation layer 73 near the TSV structure 10 is connected to the edge of the third heat conduction layer 63.

[0114] The multi-layered heat-conducting layer group makes the heat-conducting layer thickest at the first end face of the TSV structure 10, and the thickness of the heat-conducting layer is thicker closer to the first end face of the TSV structure 10, which accelerates the heat conduction effect and improves the heat dissipation capacity of the more peripheral areas of the TSV structure 10.

[0115] Additionally, refer to Figure 8 As shown, in this example embodiment, the end face of the first end of the TSV structure 10 is exposed to the first insulating layer 31; that is, the depth of the first blind hole 41 on the first insulating layer 31 is greater than that of the first blind hole 41. Figure 6 and Figure 7 The first blind hole 41 in the example embodiment shown has a small depth. Figure 8 In the illustrated embodiment, only one thermally conductive layer 64 and one heat-dissipating layer 74 are provided, namely, thermally conductive layer 64 and heat-dissipating layer 74. Specifically, the thermally conductive layer 64 is sheet-shaped and contacts the end face of the first end of the TSV structure 10 exposed in the first insulating layer 31; the heat-dissipating layer 74 is connected to the edge of the thermally conductive layer 64 and is located on the side of the first insulating layer 31 closer to the TSV structure 10. The heat-dissipating layer 74 can be cylindrical and extends away from the TSV structure 10, that is, the edge of the heat-dissipating layer 74 close to the TSV structure 10 is connected to the edge of the thermally conductive layer 64.

[0116] The materials of the first thermally conductive layer 61, the second thermally conductive layer 62, the third thermally conductive layer 63, the thermally conductive layer 64, the first heat dissipation layer 71, the second heat dissipation layer 72, the third heat dissipation layer 73, and the heat dissipation layer 74 can be tungsten, aluminum, copper, gold, silver, or semiconductor metal materials and combinations thereof, or other non-metallic semiconductor materials and combinations thereof with excellent thermal conductivity; and their materials can be the same or different.

[0117] The first insulating layer 31, the second insulating layer 32, and the third insulating layer 33 can be made of insulating materials with excellent thermal conductivity, or insulating materials mixed with thermally conductive metal or metal oxide particles; and their materials can be the same or different.

[0118] It should be noted that the structure of the heat conduction layer group and the heat dissipation layer group is not limited to the above description. For example, the heat conduction layer group and the heat dissipation layer group can be set to two layers, or they can be set to four, five or more layers.

[0119] Please continue to refer to Figure 6 As shown, the semiconductor device may further include four heat sinks 12, each heat sink 12 being configured as a bottomed cylindrical shape with a bottom wall and side walls. The bottom wall is connected to the end of the heat dissipation layer assembly away from the TSV structure 10, and the side walls extend away from the TSV structure 10. The heat sinks 12 increase the heat dissipation area, thereby enhancing the heat dissipation effect. Of course, the number of heat sinks 12 can be set as needed.

[0120] Reference Figure 9As shown, at least one heat sink 12 is connected between the heat dissipation layer groups of two adjacent TSV structures 10. That is, one heat sink 12 is connected to the first heat dissipation layer 71 of one TSV structure 10, and also to the first heat dissipation layer 71 of the adjacent TSV structure 10. By connecting the heat dissipation layer groups of two adjacent TSV structures 10 through the heat sink 12, the heat dissipation uniformity of the TSV structure 10 is increased.

[0121] Reference Figure 10 and Figure 11 As shown, the first thermally conductive material layer 51 on the first insulating layer 31 outside the first blind hole 41 may not be removed, and the first thermally conductive layer 61 may still be formed on the first insulating layer 31 outside the first blind hole 41; the second thermally conductive material layer 52 on the second insulating layer 32 outside the second blind hole 42 may not be removed, and the second thermally conductive layer 62 may still be formed on the second insulating layer 32 outside the second blind hole 42; the third thermally conductive material layer on the third insulating layer 33 outside the third blind hole may not be removed, and the third thermally conductive layer 63 may still be formed on the third insulating layer 33 outside the third blind hole.

[0122] The semiconductor device may further include a dielectric layer 8 and a metal barrier layer 9; the dielectric layer 8 is disposed on the side of the heat dissipation layer assembly away from the TSV structure 10; the metal barrier layer 9 is disposed on the side of the dielectric layer 8 away from the TSV structure 10. The dielectric layer 8 and the metal barrier layer 9 prevent the risk of additional leakage current and metal contamination. The metal barrier layer 9 is made of Ti, TiN, Ta, TaN, Cu, or a copper alloy.

[0123] Furthermore, this exemplary embodiment also provides a three-dimensional integrated circuit, which may include the semiconductor device described in any of the above embodiments. The specific structure of the semiconductor device has been described in detail above, and therefore will not be repeated here.

[0124] Compared with the prior art, the beneficial effects of the three-dimensional integrated circuit provided in the embodiments of the present invention are the same as the beneficial effects of the semiconductor device provided in the above embodiments, and will not be repeated here.

[0125] Furthermore, this exemplary embodiment also provides a method for fabricating a semiconductor device, referring to... Figure 12 As shown, the method for fabricating this semiconductor device may include the following steps:

[0126] Step S10: A substrate is provided, on which a TSV structure 10 is disposed.

[0127] Step S20: The substrate is patterned to form a groove, so that the first end of the TSV structure 10 is exposed in the groove, and the distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove.

[0128] The following provides a detailed explanation of each step in the fabrication process of a semiconductor device.

[0129] In this example implementation, refer to Figure 3 As shown, a substrate 1 is provided, on which a first groove 11 is formed. The first end of the TSV structure 10 is exposed in the first groove 11, and the distance between the end face of the first end of the TSV structure 10 and the bottom wall of the first groove 11 is less than the depth of the first groove 11.

[0130] Reference Figure 13 As shown, a first insulating material layer 21 is formed on the substrate 1, and the first insulating material layer 21 fills the first groove 11 on the substrate 1. (Refer to...) Figure 4 As shown, the first insulating material layer 21 is then patterned to form a first insulating layer 31 and a first blind hole 41 concentric with the first groove 11. The first blind hole 41 exposes a portion of the first end of the TSV structure 10 to the first insulating layer 31. The first insulating layer 31 covers the groove wall of the first groove 11 and the substrate 1.

[0131] In some other exemplary embodiments of the present invention, the preparation method may further include: forming a thermally conductive layer group and a heat dissipation layer group, wherein the thermally conductive layer group is in the first blind hole 41, the thermally conductive layer group is in contact with at least the end face of the first end of the TSV structure 10, the thickness of the thermally conductive layer group decreases as the distance from the end face of the first end increases, and the heat dissipation layer group is connected to the thermally conductive layer group and extends away from the TSV structure 10.

[0132] Specifically: Refer to Figure 14 As shown, a first thermally conductive material layer 51 is formed at the first end of the TSV structure 10 and on the side of the first insulating layer 31 away from the substrate through processes such as evaporation and sputtering. (Refer to...) Figure 15 As shown, a first thermally conductive layer 61 and a first heat dissipation layer 71 are formed on the first insulating layer 31 outside the first blind hole 41 by patterning the first thermally conductive material layer 51. The first thermally conductive layer 61 is formed into a bottomed cylindrical shape and is fitted onto the first end of the TSV structure 10. The first heat dissipation layer 71 is formed into a cylindrical shape and is connected to the edge of the cylindrical wall of the first thermally conductive layer 61, and the first heat dissipation layer 71 is located on the side of the first insulating layer 31 closer to the TSV structure 10. The specific structures of the first thermally conductive layer 61 and the first heat dissipation layer 71 have been described in detail above, so they will not be repeated here. Then, a second insulating material layer 22 is formed on the side of the first thermally conductive layer 61, the first heat dissipation layer 71 and the first insulating layer 31 away from the substrate 1 by a planarization process.

[0133] Reference Figure 16As shown, the second insulating material layer 22 is patterned to form a second blind hole and a second insulating layer 32. The orthographic projection of the second blind hole on the substrate 1 at least partially overlaps with the orthographic projection of the first thermally conductive layer 61 on the substrate 1, so that at least part of the first thermally conductive layer 61 is exposed. That is, the second blind hole 42 is coaxially arranged with the first blind hole 41, and the second insulating layer 32 completely covers the first heat dissipation layer 71, only covering the end of the first thermally conductive layer 61 that is connected to the first heat dissipation layer 71.

[0134] Reference Figure 17 As shown, a second thermally conductive material layer 52 is formed on the side of the second insulating layer 32 and the first thermally conductive layer 61 away from the substrate 1 by processes such as evaporation and sputtering.

[0135] Reference Figure 18 As shown, the second thermally conductive material layer 52 is patterned to remove the second blind hole 42 on the second insulating layer 32 to form a second thermally conductive layer 62 and a second heat dissipation layer 72. The second thermally conductive layer 62 is formed into a bottomed cylindrical shape and is fitted onto the side of the first thermally conductive layer 61 away from the TSV structure 10. The second heat dissipation layer 72 is connected to the edge of the cylindrical wall of the second thermally conductive layer 62 and is located on the side of the second insulating layer 32 away from the substrate. The specific structures of the second thermally conductive layer 62 and the second heat dissipation layer 72 have been described in detail above, and therefore will not be repeated here.

[0136] A third insulating material layer is formed on the side of the second thermally conductive layer 62, the second heat dissipation layer 72, and the second insulating layer 32 away from the substrate 1 through a planarization process. The third insulating material layer is then patterned to form a third blind via and a third insulating layer 33. The orthographic projection of the third blind via on the substrate 1 at least partially overlaps with the orthographic projection of the second thermally conductive layer 62 on the substrate, thereby exposing at least a portion of the second thermally conductive layer 62. That is, the third blind via is coaxially arranged with the first blind via 41, and the third insulating layer 33 completely covers the second heat dissipation layer 72, except for the end of the second thermally conductive layer 62 that is connected to the second heat dissipation layer 72.

[0137] A third thermally conductive material layer is formed on the side of the third insulating layer 33 and the second thermally conductive layer 62 away from the substrate 1 by processes such as evaporation and sputtering. The third thermally conductive material layer is then patterned to remove the second thermally conductive material layer 52 on the third insulating layer 33, except for the third blind via, to form a third thermally conductive layer 63 and a third heat dissipation layer 73. The third thermally conductive layer 63 is located on the side of the second thermally conductive layer 62 away from the TSV structure 10, and the third heat dissipation layer 73 is connected to the edge of the third thermally conductive layer 63 and is located on the side of the third insulating layer 33 away from the substrate. The specific structures of the third thermally conductive layer 63 and the third heat dissipation layer 73 have been described in detail above, and therefore will not be repeated here.

[0138] A fourth insulating material layer 24 is formed on the side of the heat dissipation layer group away from the TSV structure 10 by a planarization process. The fourth insulating material layer 24 completely covers the third thermal conductive layer 63 and the third heat dissipation layer 73.

[0139] Reference Figure 19 As shown, the fourth insulating material layer 24 is patterned to form the fourth insulating layer 34. During the patterning process of the fourth insulating material layer 24, the etching time is relatively long, which causes the second insulating layer 32, the third insulating layer 33 and part of the first insulating layer 31 to also be etched to form multiple fourth blind holes 44. The ends of the first heat dissipation layer 71, the second heat dissipation layer 72 and the third heat dissipation layer 73 that are away from the TSV structure 10 are exposed outside the bottom wall of the fourth blind hole 44.

[0140] Reference Figure 20 As shown, a fourth thermally conductive material layer 54 is formed on the side of the fourth blind hole 44 away from the TSV structure 10 through processes such as evaporation and sputtering. (Refer to...) Figure 6 As shown, the fourth thermally conductive material layer 54 is patterned to remove the fourth blind hole 44, forming multiple heat sinks 12. Each heat sink 12 is a bottomed cylindrical shape with a bottom wall and side walls. The bottom wall is connected to the end of the heat dissipation layer group away from the TSV structure 10, and the side walls extend away from the TSV structure 10. A dielectric layer 8 is formed on the side of the heat dissipation layer group away from the TSV structure 10; a metal barrier layer 9 is formed on the side of the dielectric layer 8 away from the TSV structure 10.

[0141] Reference Figure 9 As shown, a heat sink 12 can also be placed between two adjacent TSV structures 10, so that the heat sink 12 is connected between the heat dissipation layer groups of the two adjacent TSV structures 10.

[0142] Additionally, it should be noted that the structure of the substrate is not limited to the above description; for example, referring to... Figure 21 As shown, one side of the substrate 1 is a plane, and the first end of the TSV structure 10 protrudes from this plane and is exposed outside the substrate 1. (Refer to...) Figure 22 As shown, a first insulating material layer 21 is formed on the substrate 1 and at the first end of the TSV structure 10 through a planarization process. The thickness of the first insulating material layer 21 is greater than the height at which the first end of the TSV structure 10 protrudes from the substrate 1, and the first insulating material layer 21 completely covers the first end of the TSV structure 10. (Refer to...) Figure 8 As shown, the first insulating material layer 21 is patterned to form the first blind hole 41 and the first insulating layer 31.

[0143] The subsequent methods for forming the heat-conducting layer group and the heat-dissipating layer group are the same as those for forming the heat-dissipating layer group. Figures 14-18 The methods of the example implementation shown can be the same, and will be described below with reference to the accompanying drawings.

[0144] Reference Figure 23 As shown, a first thermally conductive material layer 51 is formed on the side of the first insulating layer 31 and the TSV structure 10 away from the substrate 1. (Refer to...) Figure 24 As shown, a first thermally conductive layer 61 and a first heat-dissipating layer 71 are formed by patterning the first thermally conductive material layer 51. The first thermally conductive layer 61 is formed as a bottomed cylindrical shape and is fitted onto one end of the TSV structure 10. The first heat-dissipating layer 71 is formed as a cylindrical shape and is connected to the edge of the cylindrical wall of the first thermally conductive layer 61, and is located on the side of the first insulating layer 31 closest to the TSV structure 10. Then, a second insulating material layer 22 is formed on the side of the first thermally conductive layer 61, the first heat-dissipating layer 71, and the first insulating layer 31 away from the substrate 1. (Refer to...) Figure 25 As shown, the second insulating material layer 22 is patterned to form a second blind hole 42 and a second insulating layer 32. The orthographic projection of the second blind hole 42 on the substrate 1 at least partially overlaps with the orthographic projection of the first thermally conductive layer 61 on the substrate 1, thereby exposing at least a portion of the first thermally conductive layer 61. (Refer to...) Figure 26 As shown, a second thermally conductive material layer 52 is formed on the side of the second insulating layer 32 and the first thermally conductive layer 61 away from the substrate 1.

[0145] Reference Figure 7 As shown, the second thermally conductive material layer 52 is patterned to form a second thermally conductive layer 62 and a second heat dissipation layer 72. The second thermally conductive layer 62 is formed into a bottomed cylindrical shape and is sleeved on the side of the first thermally conductive layer 61 away from the TSV structure 10. The second heat dissipation layer 72 is connected to the edge of the cylindrical wall of the second thermally conductive layer 62 and is located on the side of the second insulating layer 32 away from the substrate 1. A third insulating material layer is formed on the side of the second thermally conductive layer 62, the second heat dissipation layer 72, and the second insulating layer 32 away from the substrate 1. The third insulating material layer is patterned to form a third blind hole and a third insulating layer 33. The orthographic projection of the third blind hole on the substrate 1 at least partially overlaps with the orthographic projection of the second thermally conductive layer 62 on the substrate 1, so that at least part of the second thermally conductive layer 62 is exposed. A third thermally conductive material layer is formed on the side of the third insulating layer 33 and the second thermally conductive layer 62 away from the substrate 1. The third thermally conductive material layer is patterned to form a third thermally conductive layer 63 and a third heat dissipation layer 73. The third thermally conductive layer 63 is disposed on the side of the second thermally conductive layer 62 away from the TSV structure 10. The third heat dissipation layer 73 is connected to the edge of the third thermally conductive layer 63 and is located on the side of the third insulating layer 33 away from the substrate 1.

[0146] The above describes a method for fabricating a semiconductor device with three thermally conductive layers and three heat-dissipating layers. Alternatively, a single thermally conductive layer 64 and a single heat-dissipating layer 74 can also be provided. (Refer to...) Figure 27As shown, the length of the first end of the TSV structure 10 protruding from the substrate 1 is shorter than the length of the protruding substrate 1 in the above example embodiment. (Refer to...) Figure 28 As shown, a first insulating material layer 21 is formed on the substrate 1 and at the first end of the TSV structure 10. (Refer to...) Figure 29 As shown, the first insulating material layer 21 is patterned to form a first blind via 41, so that the end face of the TSV structure 10 exposed to the substrate 1 is exposed to the first insulating layer 31. (Refer to...) Figure 30 As shown, a thermally conductive material layer 55 is formed on the end face of the first insulating layer 31 and the first end of the TSV structure 10. (Refer to...) Figure 31 As shown, the thermally conductive material layer 55 is patterned to form a thermally conductive layer 64 and a heat dissipation layer 74. The thermally conductive layer 64 is in contact with the end face of the first end of the TSV structure 10, and the heat dissipation layer 74 is connected to the edge of the thermally conductive layer and located on the side of the first insulating layer 31 away from the substrate 1. (Refer to...) Figure 32 As shown, a dielectric layer 8 is formed on the side of the first insulating layer 31, the thermally conductive layer and the heat dissipation layer 74 away from the substrate 1.

[0147] The features, structures, or characteristics described above can be combined in any suitable manner in one or more embodiments, and the features discussed in the various embodiments are interchangeable where possible. In the above description, numerous specific details are provided to give a full understanding of embodiments of the invention. However, those skilled in the art will recognize that the technical solutions of the invention can be practiced without one or more of the specific details described, or other methods, components, materials, etc., can be employed. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring various aspects of the invention.

[0148] Although relative terms such as "up" and "down" are used in this specification to describe the relative relationship of one component of an icon to another, these terms are used only for convenience, such as according to the orientation of the examples shown in the accompanying drawings. It is understood that if the device of the icon is flipped so that it is upside down, the component described as "up" will become the component described as "down". Other relative terms such as "high", "low", "top", and "bottom" have similar meanings. When a structure is "up" of another structure, it may mean that the structure is integrally formed on the other structure, or that the structure is "directly" mounted on the other structure, or that the structure is "indirectly" mounted on the other structure through another structure.

[0149] In this specification, the terms “a,” “an,” “the,” “the,” and “at least one” are used to indicate the presence of one or more elements / components / etc.; the terms “comprising,” “including,” and “having” are used to indicate an open-ended inclusion and to mean that there may be other elements / components / etc. in addition to the listed elements / components / etc.; the terms “first,” “second,” and “third,” etc., are used only as markings and are not a limitation on the number of objects.

[0150] It should be understood that the application of this invention is not limited to the detailed structure and arrangement of the components presented in this specification. The invention can have other embodiments and can be implemented and performed in various ways. The foregoing variations and modifications fall within the scope of this invention. It should be understood that the invention disclosed and defined in this specification extends to all alternative combinations of two or more individual features mentioned or apparent in the text and / or drawings. All these different combinations constitute multiple alternative aspects of the invention. The embodiments described in this specification illustrate the best known mode for carrying out the invention and will enable those skilled in the art to utilize the invention.

Claims

1. A semiconductor device, characterized in that, include: A substrate having grooves provided thereon; A TSV structure is disposed on the substrate, with the first end of the TSV structure exposed in the groove, and the distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove. The substrate includes: A substrate having the groove thereon, with the first end exposed inside the groove; A first insulating layer is disposed on the substrate, and a first blind hole concentric with the groove is provided on the first insulating layer. The first blind hole exposes at least a portion of the first end of the TSV structure exposed on the substrate to the first insulating layer. The semiconductor device further includes: A thermally conductive layer group is disposed in the first blind hole. The thermally conductive layer group is in contact with at least the end face of the first end of the TSV structure. Along the direction perpendicular to the end face, the thickness of each thermally conductive layer in the thermally conductive layer group decreases as the distance from the end face of the first end increases. A heat dissipation layer assembly is connected to the heat conduction layer assembly and extends away from the TSV structure; Multiple heat sinks, each heat sink being configured as a bottomed cylindrical shape having a bottom wall and side walls, the bottom wall being connected to the end of the heat dissipation layer group away from the TSV structure, and the side walls extending away from the TSV structure.

2. The semiconductor device according to claim 1, characterized in that, The TSV structure is exposed at the first end of the substrate and exposed at the first insulating layer; The thermally conductive layer assembly includes: The first heat-conducting layer is configured as a bottomed cylindrical shape and is sleeved on the first end; The second thermal conductive layer is configured as a bottomed cylindrical shape and is sleeved on the side of the first thermal conductive layer away from the TSV structure. A third thermally conductive layer is disposed on the side of a portion of the second thermally conductive layer away from the TSV structure; The heat dissipation layer assembly includes: The first heat dissipation layer is connected to the edge of the cylinder wall of the first heat-conducting layer and is located on the side of the first insulating layer away from the substrate. The second insulating layer is located on the side of the first heat dissipation layer closest to the TSV structure; The second heat dissipation layer is connected to the edge of the cylinder wall of the second heat-conducting layer and is located on the side of the second insulating layer away from the substrate. The third insulating layer is located on the side of the second heat dissipation layer closest to the TSV structure; The third heat dissipation layer is connected to the edge of the third thermally conductive layer and is located on the side of the third insulating layer away from the substrate.

3. The semiconductor device according to claim 1, characterized in that, At least one of the heat sinks is connected between two adjacent heat dissipation layer groups of the TSV structure.

4. The semiconductor device according to claim 1, characterized in that, The semiconductor device further includes: A dielectric layer is disposed on the side of the heat dissipation layer group away from the TSV structure; A metallic barrier layer is disposed on the side of the dielectric layer away from the TSV structure.

5. A three-dimensional integrated circuit, characterized in that, include: The semiconductor device according to any one of claims 1 to 4.

6. A method for fabricating a semiconductor device, characterized in that, include: A substrate is provided, on which a TSV structure is disposed; The substrate is patterned to form a groove, so that the first end of the TSV structure is exposed in the groove, and the distance between the end face of the first end and the bottom wall of the groove is less than the depth of the groove. The provision of a substrate, wherein patterning the substrate to form grooves includes: A substrate is provided, wherein the groove is provided on the substrate, and the first end is exposed in the groove; A first insulating material layer is formed on the substrate, and the first insulating material layer is patterned to form a first insulating layer and a first blind hole concentric with the groove. The first blind hole exposes at least a portion of the first end of the TSV structure exposed on the substrate to the first insulating layer. The preparation method further includes: A thermally conductive layer group and a heat dissipation layer group are formed. The thermally conductive layer group is located within the first blind hole. The thermally conductive layer group is in contact with at least the end face of the first end of the TSV structure. Along the direction perpendicular to the end face, the thickness of each thermally conductive layer in the thermally conductive layer group decreases as the distance from the end face of the first end increases. The heat dissipation layer group is connected to the thermally conductive layer group and extends away from the TSV structure. A fourth insulating material layer is formed on the side of the heat dissipation layer group away from the TSV structure, and the fourth insulating material layer is patterned to form a fourth insulating layer and a plurality of fourth blind holes; A fourth thermally conductive material layer is formed on the side of the fourth insulating layer and the plurality of fourth blind holes away from the TSV structure, and the fourth thermally conductive material layer is patterned to form a plurality of heat sinks. Each heat sink is a bottomed cylindrical shape with a bottom wall and a side wall. The bottom wall is connected to the end of the heat dissipation layer group away from the TSV structure, and the side wall extends away from the TSV structure.

7. The method for fabricating a semiconductor device according to claim 6, characterized in that, The TSV structure is exposed at the first end of the substrate and exposed at the first insulating layer; Forming a thermally conductive layer assembly and a heat dissipation layer assembly, including: A first thermally conductive material layer is formed at the first end of the TSV structure and on the side of the first insulating layer away from the substrate. The first thermally conductive material layer is patterned to form a first thermally conductive layer and a first heat dissipation layer. The first thermally conductive layer is formed as a bottomed cylindrical shape and is sleeved on the first end. The first heat dissipation layer is connected to the edge of the cylindrical wall of the first thermally conductive layer and is located on the side of the first insulating layer away from the substrate. A second insulating material layer is formed on the side of the first thermally conductive layer, the first heat dissipation layer, and the first insulating layer away from the substrate. The second insulating material layer is patterned to form a second blind hole and a second insulating layer. The orthographic projection of the second blind hole on the substrate at least partially overlaps with the orthographic projection of the first thermally conductive layer on the substrate, so that at least part of the first thermally conductive layer is exposed. A second thermally conductive material layer is formed on the side of the second insulating layer and the first thermally conductive layer away from the substrate. The second thermally conductive material layer is patterned to form a second thermally conductive layer and a second heat dissipation layer. The second thermally conductive layer is formed as a bottomed cylindrical shape and is sleeved on the side of the first thermally conductive layer away from the TSV structure. The second heat dissipation layer is connected to the edge of the cylindrical wall of the second thermally conductive layer and is located on the side of the second insulating layer away from the substrate. A third insulating material layer is formed on the side of the second thermal conductive layer, the second heat dissipation layer and the second insulating layer away from the substrate, and the third insulating material layer is patterned to form a third blind hole and a third insulating layer. The orthographic projection of the third blind hole on the substrate overlaps at least partially with the orthographic projection of the second thermal conductive layer on the substrate, so that at least part of the second thermal conductive layer is exposed. A third thermally conductive material layer is formed on the side of the third insulating layer and the second thermally conductive layer away from the substrate. The third thermally conductive material layer is patterned to form a third thermally conductive layer and a third heat dissipation layer. The third thermally conductive layer is disposed on a portion of the second thermally conductive layer on the side away from the TSV structure. The third heat dissipation layer is connected to the edge of the third thermally conductive layer and is located on the side of the third insulating layer away from the substrate.

8. The method for fabricating a semiconductor device according to claim 6, characterized in that, At least one of the heat sinks is connected between two adjacent heat dissipation layer groups of the TSV structure.

9. The method for fabricating a semiconductor device according to claim 6, characterized in that, The preparation method further includes: A dielectric layer is formed on the side of the heat dissipation layer group away from the TSV structure; A metallic barrier layer is formed on the side of the dielectric layer away from the TSV structure.

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