A texture recognition substrate, and its repair method and device

Abstract

The present invention provides a texture recognition substrate, a repair method, and a device therefor. The texture recognition substrate comprises: a base substrate and a plurality of texture sensing units arranged in an array on the base substrate; each texture sensing unit comprises a photosensitive collector, at least one repair controller, and a reverse bias voltage line; the reverse bias voltage line is located on a side of the photosensitive collector facing away from the base substrate and is coupled to one end of the photosensitive collector; the repair controller is coupled in parallel to a target segment of the reverse bias voltage line; the repair controller is configured to couple opposite ends of the target segment when the target segment is disconnected. This improves texture recognition accuracy.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a texture recognition substrate, and a repair method and device thereof. Background Art

[0002] Existing in-display fingerprint recognition technologies that combine optical sensing with displays typically use a display backplane coupled with an amorphous silicon PIN device. In bright sunlight, such as outdoors on a sunny day, stray light from natural light can easily saturate the photosensitive device, making it unable to distinguish the signal differences between the valleys and ridges of a fingerprint, thus interfering with normal fingerprint recognition.

[0003] Reducing the thickness of the I layer of the photosensitive device can reduce its external quantum efficiency (EQE), thereby ensuring that the photosensitive device structure is less likely to saturate under strong light, thereby achieving the purpose of distinguishing between bright and dark states. However, as the thickness of the I layer decreases, the non-uniformity of the film becomes more obvious, and the impact on the device becomes more serious. How to improve the accuracy of texture recognition has become an urgent technical problem to be solved. Summary of the Invention

[0004] The present invention provides a texture recognition substrate, and a repair method and device thereof, for improving texture recognition accuracy.

[0005] In a first aspect, an embodiment of the present invention provides a texture recognition substrate, comprising:

[0006] A base substrate and a plurality of texture sensing units arranged in an array on the base substrate;

[0007] Each of the texture sensing units includes a photosensor, at least one repair controller and a reverse bias voltage line;

[0008] The reverse bias voltage line is located on a side of the photosensitive collector away from the substrate and is coupled to one end of the photosensitive collector, and the repair controller is coupled in parallel to a target segment of the reverse bias voltage line;

[0009] The repair controller is used to couple the two opposite ends of the target segment when the target segment is disconnected.

[0010] In one possible implementation, the repair controller includes a repair transistor, a gate of the repair transistor is coupled to the repair control terminal, a first electrode of the repair transistor is coupled to the first terminal of the target segment, and a second electrode of the repair transistor is coupled to the second terminal of the target segment.

[0011] In a possible implementation, the texture sensing unit further includes a switch controller coupled to the other end of the photosensitive collector, and the switch controller and the repair controller are both located between the substrate and the photosensitive collector.

[0012] In a possible implementation, the switch controller includes a switch transistor, a gate of the switch transistor is coupled to the collection control terminal, a first electrode of the switch transistor is coupled to the first electrode of the photosensitive collector, and a second electrode of the switch transistor is coupled to the signal readout terminal.

[0013] In a possible implementation, there are at least two repair controllers, and the width-to-length ratios of the repair transistors are equal and greater than the width-to-length ratio of the switch transistor.

[0014] In a possible implementation, the orthographic projection of each repair transistor on the base substrate does not overlap with the orthographic projection of the switch transistor on the base substrate.

[0015] In a second aspect, an embodiment of the present invention provides a pattern recognition device, comprising:

[0016] A texture recognition substrate as described in any one of the above items.

[0017] In a third aspect, an embodiment of the present invention provides a method for repairing a texture recognition substrate as described in any one of the above items, comprising:

[0018] During the testing phase, a test current value flowing through the photosensitive collector is obtained;

[0019] If it is determined that the test current value is greater than the preset current value, disconnecting the target segment;

[0020] The at least one repair controller is controlled to be turned on to couple the opposite ends of the target segment.

[0021] In a possible implementation, there are at least two repair controllers, and the method further includes:

[0022] The repair controllers are controlled to be turned on alternately.

[0023] In a possible implementation, the durations of the alternating conduction of the repair controllers are the same.

[0024] The beneficial effects of the present invention are as follows:

[0025] An embodiment of the present invention provides a texture recognition substrate, a repair method and a device thereof, wherein the texture recognition substrate includes a base substrate and a plurality of texture sensing units arranged in an array on the base substrate, each texture sensing unit includes a photosensitive collector, at least one repair controller and a reverse bias voltage line, the reverse bias voltage line is located on the side of the photosensitive collector away from the base substrate and is coupled to one end of the photosensitive collector, the repair controller is coupled in parallel with a target segment in the reverse bias voltage line; the repair controller is used to couple the opposite ends of the target segment when the target segment is disconnected; that is, when the target segment in parallel with the repair controller is disconnected, the repair controller can The opposite ends of the section are coupled together, so that the repair controller can divide the reverse bias voltage loaded on both ends of the photosensitive collector, so that the reverse bias voltage loaded on both ends of the photosensitive collector is less than the preset voltage value; even for the photosensitive collector with a thinner I layer, when the current is too large, the reverse bias voltage loaded on both ends of the photosensitive collector can be reduced through the voltage division effect of the repair controller, so that the response current flowing through the photosensitive collector with a thinner I layer is roughly equivalent to the response current of the photosensitive collector with a normal thickness of the I layer, effectively avoiding the photosensitive collector with a thinner I layer from having a high order of magnitude current response under the same reverse bias voltage, thereby improving the texture recognition accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 Schematic diagram of the volt-ampere characteristic curve of a PIN device with conventional I layer thickness in the related art;

[0027] Figure 2 Schematic diagram of the volt-ampere characteristic curve of a PIN device when the thickness of the I layer is reduced in the related art;

[0028] Figure 3 A schematic diagram of a top view of a texture recognition substrate provided by an embodiment of the present invention;

[0029] Figure 4 A schematic diagram of a circuit structure of a texture sensing unit in a texture recognition substrate provided by an embodiment of the present invention;

[0030] Figure 5 A schematic diagram of a circuit structure of a texture sensing unit in a texture recognition substrate provided by an embodiment of the present invention;

[0031] Figure 6 A schematic diagram of a circuit structure of a texture sensing unit in a texture recognition substrate provided by an embodiment of the present invention;

[0032] Figure 7 To follow Figure 3 A schematic diagram of one of the cross-sectional structures in the direction indicated by MM;

[0033] Figure 8A schematic diagram of one structure of a texture recognition device provided by an embodiment of the present invention;

[0034] Figure 9 A flow chart of a method for repairing a texture recognition substrate provided by an embodiment of the present invention.

[0035] Figure 10 This is a timing diagram of signals loaded when there are two repair controllers in a repair method for a texture recognition substrate provided by an embodiment of the present invention.

[0036] Description of reference numerals:

[0037] 1-substrate; 2-texture sensing unit; 3-photosensitive collector; 4-repair controller; 5-reverse bias voltage line; 50-target segment; RT-repair transistor; rg-repair control terminal; 6-switch controller; T-switch transistor; g-sampling control terminal; rd-signal readout terminal; 10-texture recognition substrate. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. And in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. Based on the described embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0039] Unless otherwise defined, technical or scientific terms used in this invention should have the same general meaning as those with ordinary skills in the field to which this invention belongs. The terms "first," "second," and so on in the description, claims, and drawings of this invention are used to distinguish different objects, not to describe a specific order. In addition, the terms "include" or "comprising" and similar words mean that the elements or objects preceding the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0040] It should be noted that the sizes and shapes of the figures in the accompanying drawings do not reflect the actual scale and are only for the purpose of illustrating the present invention. The same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions.

[0041] In related technologies, the EQE of a PIN device structure is often reduced by reducing the thickness of the I layer to avoid saturation of the PIN device under strong light, thereby distinguishing the signal difference between the valleys and ridges of the fingerprint.

[0042] However, as the thickness of the I layer decreases, the non-uniformity of the film becomes more obvious and the impact on the device becomes more serious; for example, the thickness uniformity of the process film deposition is The conventional I layer thickness is The effect of film uniformity on the device is very small, but thinning to After that, the film thickness fluctuation reaches 10%, and the impact on the device will be seriously amplified. Figure 1 and Figure 2 As shown, Figure 1 Schematic diagram of the volt-ampere characteristic curve of the device with conventional I layer thickness, Figure 2 This is a schematic diagram of the volt-ampere characteristic curve of the device when the thickness of the I layer is reduced. Figure 2 The diagram on the right is an enlarged diagram of the dotted box in the diagram on the left. Specifically, as the thickness of the I layer decreases, the voltage range where the device reverse current is stable is severely reduced. According to the capacitance formula: Where A represents the area of the PN junction in the device; α j represents the impurity concentration gradient in the device, ε represents the dielectric constant, V D It is the contact potential difference of the PN junction in the device, and V represents the external voltage applied to the device (i.e., reverse bias voltage). In order to ensure that the sensor still has a high capacitance storage capacity, a larger reverse bias voltage is required. This reverse bias voltage is generally set to be slightly smaller than the current mutation voltage. Due to the uneven thickness of the I layer, the mutation voltage of the thinner one is smaller. For example, in actual products, for the same reverse bias voltage of -3.0v, the relatively thin I layer device reaches the mutation voltage at -2.9v, and at -3.0v it will generate a very large current value. The current at this position may increase by orders of magnitude with the change of reverse bias voltage, and it is very easy to have a response with a very high current value, resulting in a bright spot with no difference between the bright and dark states, resulting in more bad points in fingerprint recognition.

[0043] In view of this, an embodiment of the present invention provides a texture recognition substrate, and a repair method and device thereof, for improving texture recognition accuracy.

[0044] Combine Figure 3 and Figure 4 As shown, Figure 3 This is a schematic diagram of a top view of a texture recognition substrate provided by an embodiment of the present invention. Figure 4 This is a schematic diagram of a circuit structure of any texture sensing unit in the texture recognition substrate. The texture recognition substrate includes:

[0045] A base substrate 1 and a plurality of texture sensing units 2 arranged in an array on the base substrate 1;

[0046] Each of the texture sensing units 2 includes a photosensitive collector 3, at least one repair controller 4 and a reverse bias voltage line 5;

[0047] The reverse bias voltage line 5 is located on a side of the photosensitive collector 3 away from the substrate 1 and is coupled to one end of the photosensitive collector 3 . The repair controller 4 is coupled in parallel to a target segment 50 of the reverse bias voltage line 5 .

[0048] The repair controller 4 is configured to couple two opposite ends of the target segment 50 when the target segment 50 is disconnected.

[0049] In a specific implementation, the base substrate 1 in the texture recognition substrate can be a rigid substrate or a flexible substrate, which is not limited here. A plurality of texture sensing units 2 arranged in an array on the base substrate 1 can be provided according to actual application needs, which is not limited here.

[0050] Each texture sensing unit 2 includes a photosensor 3, at least one repair controller 4, and a reverse bias voltage line 5. The photosensor 3 can be used to collect texture data and typically implements a PIN. The at least one repair controller 4 can be one or more, depending on actual application needs and is not limited here.

[0051] The reverse bias voltage line 5 is located on the side of the photosensitive collector 3 away from the substrate 1 and is coupled to one end of the photosensitive collector 3. Through the reverse bias voltage line 5, a reverse bias voltage signal can be applied to the corresponding photosensitive collector 3 to reverse bias the photosensitive collector 3 and realize the pattern recognition function, which can be the recognition of patterns such as fingerprints, palm prints, and vein patterns, which are not limited here.

[0052] Moreover, when the target segment 50 is disconnected, the corresponding repair controller 4 can be coupled to the opposite ends of the target end. In this way, the repair controller 4 can divide the reverse bias voltage loaded on both ends of the photosensitive collector 3, so that the reverse bias voltage value loaded on both ends of the photosensitive collector 3 is smaller than the voltage value when the target segment 50 is not disconnected; even if the photosensitive collector 3 is a device with a thinner I layer, when the current is too large, the reverse bias voltage loaded on both ends of the photosensitive collector 3 can be reduced through the voltage dividing effect of the repair controller 4, so that the response current flowing through the photosensitive collector 3 with a thinner I layer when the target segment 50 is disconnected is roughly equivalent to the response current of the photosensitive collector 3 with a normal I layer thickness, effectively avoiding the photosensitive collector 3 with a thinner I layer from having a high order of magnitude current response under the same reverse bias voltage, thereby improving the texture recognition accuracy. In addition, when the response current of the thinner photosensitive collector 3 of layer I is roughly equivalent to the response current of the photosensitive collector 3 of layer I with normal thickness, the target segment 50 is not disconnected. Since at least one repair controller 4 is connected in parallel with the target segment 50, the target segment 50 short-circuits at least one repair controller 4. In this way, at least one repair controller 4 will not affect the current current response of the photosensitive collector 3, thereby taking into account the texture recognition under normal conditions.

[0053] It should be noted that when the photosensitive collector 3 is in the reverse bias state without reverse breakdown, the reverse bias voltage changes and the current value changes only very slightly. Adding the repair controller 4 to play the role of voltage division can effectively avoid the photosensitive collector 3 with a thinner layer I from having a high order of magnitude current response under the same reverse bias voltage. At the same time, it can also ensure that after the voltage is divided, the response current value is close to that of the photosensitive collector 3 with normal thickness, so that normal fingerprint recognition can be performed without the occurrence of bad pixels that are always bright.

[0054] In the embodiment of the present invention, Figure 5 The figure shows a schematic diagram of one circuit structure of the texture sensing unit 2. The repair controller 4 includes a repair transistor RT. The gate of the repair transistor RT is coupled to the repair control terminal rg, the first electrode of the repair transistor RT is coupled to the first end of the target segment 50, and the second electrode of the repair transistor RT is coupled to the second end of the target segment 50. In this way, by applying a corresponding repair control signal to the repair control terminal rg, the on / off control of the repair transistor RT can be achieved, thereby controlling whether the corresponding texture sensing unit 2 is repaired. Figure 5 The circuit structure diagram when there are two repair transistors RT is shown, but it is not limited to two repair transistors RT.

[0055] In the embodiment of the present invention, Figure 6The diagram below shows one circuit structure of a texture sensing unit 2. The texture sensing unit 2 also includes a switch controller 6 coupled to the other end of the light collector 3. Both the switch controller 6 and the repair controller 4 are located between the substrate 1 and the light collector 3. This allows the light collector 3 to collect data by controlling the on and off states of the switch controller 6. Furthermore, the switch controller 6 and the repair controller 4 are both located between the substrate 1 and the light collector 3, ensuring that the switch controller 6 and the repair controller 4 effectively control the light collector 3 while also ensuring that the light collector 3 collects texture data.

[0056] Still combined Figure 6 As shown, the switch controller 6 includes a switching transistor T. The gate of the switching transistor T is coupled to the acquisition control terminal, the first electrode of the switching transistor T is coupled to the first electrode of the light-sensitive collector 3, and the second electrode of the switching transistor T is coupled to the signal readout terminal rd. Thus, by applying a corresponding acquisition control signal to the acquisition control terminal g, the switching transistor T can be turned on and off, thereby controlling whether the corresponding texture sensing unit 2 collects data.

[0057] It should be noted that when the reverse bias voltage line 5 is in the on state, regardless of whether the repair controller 4 is on or not, as long as the switch controller 6 is in the on state, when the reverse bias voltage is loaded to the photosensitive collector 3 through the reverse bias voltage line 5, the texture data collected by the photosensitive collector 3 can be read through the signal readout terminal rd.

[0058] In an embodiment of the present invention, there are at least two repair controllers 4, and the width-to-length ratios of the repair transistors RT are equal and greater than the width-to-length ratio of the switch transistor T. In this way, the resistance values of the repair transistors RT are equal, and the resistance value of each repair transistor RT is greater than the resistance value of the switch transistor T. The "equal" here does not mean completely equal, but can be approximately equal or roughly equal. In this way, when a target segment 50 coupled in parallel with the repair transistor RT in the reverse bias voltage line 5 is disconnected, and when the repair transistor RT and the switch transistor T are both turned on, the repair transistor RT can effectively reduce the voltage applied to the photosensitive collector 3, playing a good voltage divider role, thereby ensuring the repair function of the repair controller 4.

[0059] In the embodiment of the present invention, Figure 7 Shown along Figure 3 In one of the cross-sectional structural diagrams in the direction shown in MM, the orthographic projections of each repair transistor RT on the base substrate 1 and the orthographic projections of the switch transistor T on the base substrate 1 do not overlap with each other. Figure 7The diagram illustrates a case where the repair controller 4 includes a repair transistor RT, but the actual implementation is not limited to this. In a specific implementation, the orthographic projection of each repair transistor RT on the substrate 1 does not overlap with the orthographic projection of the switch transistor T on the substrate 1. In actual processing, at least part of the film layers of the repair transistor RT and the switch transistor T can be fabricated on the same layer, thereby simplifying the fabrication process.

[0060] Still combined Figure 7 As shown, the switch controller 6 may include: a buffer layer (Buffer) provided on the substrate 1, an active layer (P-Si) provided on the buffer layer (Buffer), a gate insulating layer (GI) covering the active layer (P-Si), a gate electrode (Gate) provided on the gate insulating layer (GI), an interlayer insulating layer (ILD) covering the gate electrode (Gate), a via hole provided on the interlayer insulating layer (ILD) and the gate insulating layer (GI), the via hole exposing the active layer (P-Si), a gate electrode (Gate) provided on the interlayer insulating layer (ILD), and a gate electrode (Gate) provided on the gate insulating layer (GI). A first source-drain electrode (SD1) is connected to the active layer (P-Si) through vias, and sequentially covers the first passivation layer (PVX1), the first planar layer (PLN1), and the second passivation layer (PVX2) of the aforementioned structure. Vias are provided in the first passivation layer (PVX1), the first planar layer (PLN1), and the second passivation layer (PVX2), exposing the first source-drain electrode (SD1). A second source-drain electrode (SD2) disposed on the second passivation layer (PVX2) is connected to the first source-drain electrode (SD1) through the vias. A photosensitive collector 3 is disposed on the side of the second source-drain electrode (SD2) facing away from the substrate 1. The second source-drain electrode (SD2) can form the negative electrode of the photosensitive collector 3.

[0061] Still combined Figure 7 As shown, a positive electrode of the photosensitive collector 3 is also provided on the side of the photosensitive collector 3 facing away from the base substrate 1; the texture recognition substrate also includes a protective layer covering the positive electrode of the photosensitive collector 3, through which damage to the photosensitive collector 3, the repair controller 4 and the switch controller 6 by subsequent processes is effectively avoided; in addition, a via is provided in the portion of the protective layer directly above the photosensitive collector 3, through which the positive electrode of the photosensitive collector 3 is exposed, and the positive projection area of the via on the base substrate 1 can be slightly smaller than the photosensitive area of the photosensitive collector 3, so as to reserve space for the reverse bias voltage line 5 coupled to the positive electrode of the photosensitive collector 3.

[0062] It should be noted that the relevant membrane layers of the repair controller 4 are the same as those of the switch controller 6, which will not be described here. Figure 7As shown. Among them, the buffer layer (Buffer), gate insulating layer (GI), interlayer insulating layer (ILD), first passivation layer (PVX1), second passivation layer (PVX2) and protective layer (Cover) can be made of any one or more of silicon oxide (SiOx), silicon nitride (SiNx) and silicon oxynitride (SiON), and can be a single layer, a multilayer or a composite layer. The active layer (P-Si) thin film can be made of amorphous indium gallium zinc oxide material (a-IGZO), zinc oxynitride (ZnON), indium zinc tin oxide (IZTO), amorphous silicon (a-Si), polycrystalline silicon (p-Si), sexithiophene or polythiophene, that is, the embodiment of the present invention is applicable to transistors manufactured based on oxide technology, silicon technology or organic technology.

[0063] Still combined Figure 7 As shown, the texture recognition substrate also includes a second flat layer (PLN2) covering the positive electrode of the photosensitive collector 3, and an adhesion layer (PAS) covering the second flat layer (PLN2). The reverse bias voltage line 5 is arranged on the side of the adhesion layer (PAS) away from the base substrate 1. The reverse bias voltage line 5 is coupled to the positive electrode of the photosensitive collector 3 through a via penetrating the relevant film layer. The structural stability between the reverse bias voltage line 5 and the second flat layer (PLN2) is ensured by the adhesion layer (PAS); a light shielding layer (LS) is also provided between the buffer layer (Buffer) and the base substrate 1. The light shielding layer (LS) can be made of a metal layer such as molybdenum. The positive projection of the active layer on the base substrate 1 completely falls within the area of the positive projection of the light shielding layer (LS) on the base substrate 1. The light shielding layer (LS) effectively avoids the interference of external ambient light on the repair controller 4 and the switch controller 6, thereby ensuring the performance of the texture recognition substrate. In addition, for other structures in the texture recognition substrate, reference can be made to the design in the relevant technology and will not be described in detail here. In addition, Figure 7 The arrow x in the middle indicates one of the positions where the target segment 50 in the reverse bias voltage line 5 is disconnected.

[0064] It should be noted that the repair transistor RT and the switching transistor T can be a thin film transistor (TFT) or a metal oxide semiconductor field effect transistor (MOS), which is not limited here. The repair transistor RT and the switching transistor T can be an N-type transistor or a P-type transistor, which is not limited here. The first pole and the second pole of the repair transistor RT can be interchangeable in function according to the type of the repair transistor RT and the signal at the signal end; for example, the first pole can be the source and the corresponding second pole can be the drain; for another example, the first pole can be the drain and the corresponding second pole can be the source, which is not limited here. Similarly, the first pole and the second pole of the repair transistor RT can be set accordingly according to its type and the signal at the signal end, which will not be described in detail here.

[0065] Based on the same inventive concept, Figure 8 As shown, an embodiment of the present invention further provides a texture recognition device, which includes a texture recognition substrate 10 as described in any of the above items. While combining the texture recognition function of the texture recognition substrate with the display function, at least part of the film layers in the repair controller 4 and the switch controller 6 can be manufactured on the same layer as the film layers related to the display function, thereby ensuring that the texture recognition device has both the texture recognition function and the display function. In this case, the texture recognition substrate can include a plurality of sub-pixels arranged in an array, and at least one texture sensing unit 2 is disposed in a light-transmitting area between two adjacent sub-pixels. The texture recognition substrate can include a light-emitting functional layer and a drive circuit layer. When the drive circuit layer located in the display area is manufactured, the repair controller 4 and the switch controller 6 can be manufactured on the same layer, thereby simplifying the manufacturing process and reducing the manufacturing cost. The light-emitting functional layer can include an anode, a pixel defining layer, an organic light-emitting layer, and a cathode. The drive circuit layer can include transistors and storage capacitors that constitute the pixel drive circuit. The relevant film layers of the light-emitting functional layer and the drive circuit layer can be referred to the description in the relevant art and will not be described in detail here.

[0066] In addition, the principle of solving the problem of the texture recognition device is similar to that of the aforementioned texture recognition substrate. Therefore, the implementation of the texture recognition device can refer to the implementation of the aforementioned texture recognition substrate, and the repeated parts will not be repeated.

[0067] In specific implementations, the pattern recognition device provided by the embodiments of the present invention can be a mobile phone, or any product or component with a display function, such as a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, or a navigation system. The other essential components of the pattern recognition device are well understood by those skilled in the art and are not detailed here, nor should they be construed as limitations of the present invention.

[0068] Based on the same inventive concept, Figure 9 As shown, an embodiment of the present invention further provides a method for repairing a texture recognition substrate, comprising:

[0069] S101: In a testing phase, obtaining a test current value flowing through the photosensitive collector;

[0070] S102: If it is determined that the test current value is greater than the preset current value, disconnecting the target segment;

[0071] S103: Control the at least one repair controller to be turned on to couple two opposite ends of the target segment.

[0072] In the specific implementation process, the specific structure of the texture recognition substrate in the repair method can refer to the description of the relevant parts above, and will not be repeated here. The specific implementation process of steps S101 to S103 is as follows:

[0073] First, after fabricating a texture recognition substrate, a light response test is performed on the texture recognition substrate. During this test phase, a test current value flowing through the photosensitive collector 3 is obtained. The test current value is then checked to see if it is greater than a preset current value, where the preset current value is a numerical current value pre-set based on actual needs. If the test current value is determined to be greater than the preset current value, the target segment 50 is disconnected. The target segment 50 can be determined by locating a pixel location where the test current value is greater than the preset current value, then determining the target segment 50 where the reverse bias voltage line 5 is located at the pixel location. This target segment 50 can be disconnected using a laser cutting repair process. After disconnecting the target segment 50, at least one repair controller 4 can be controlled to conduct, coupling opposite ends of the target end. This ensures that the reverse bias voltage is continuously supplied to the texture collector while at least one repair controller 4 divides the voltage, thereby reducing the reverse bias voltage applied to the texture collector. This prevents the photosensitive collector 3 from experiencing a high-magnitude current response under the same reverse bias voltage, thereby ensuring relatively uniform texture recognition accuracy for the texture recognition substrate.

[0074] In an embodiment of the present invention, there are at least two repair controllers 4, and the method further includes:

[0075] The repair controllers are controlled to be turned on alternately.

[0076] In the specific implementation process, Figure 5 When there are two repair controllers 4 shown in FIG. 1 , the repair control terminals of the two repair controllers 4 can be loaded with the following commands: Figure 10The reverse pulse signal of the same frequency as shown can control the alternating conduction of the two repair controllers 4. Of course, the number of repair controllers 4 can also be set other than two. In order to realize the texture recognition function of the texture sensing unit 2, it is necessary to continuously input a reverse bias voltage to the reverse bias voltage line 5. By having multiple repair controllers 4 alternately turned on, the pressure on a single repair controller 4 is reduced. Compared with only one repair controller 4, the reliability issues caused by the long-term operation of a single repair controller 4 are avoided, thereby improving the performance of the texture recognition substrate.

[0077] In the embodiment of the present invention, the duration of the alternating conduction of each repair controller 4 is the same, so as to effectively reduce the pressure on a single repair controller 4 and ensure that the texture recognition substrate has a relatively stable texture recognition function.

[0078] The embodiment of the present invention provides a texture recognition substrate, a repair method and a device thereof, wherein the texture recognition substrate includes a base substrate 1 and a plurality of texture sensing units 2 arranged in an array on the base substrate 1, each texture sensing unit 2 includes a photosensitive collector 3, at least one repair controller 4 and a reverse bias voltage line 5, the reverse bias voltage line 5 is located on the side of the photosensitive collector 3 away from the base substrate 1 and is coupled to one end of the photosensitive collector 3, the repair controller 4 is coupled in parallel with a target segment 50 in the reverse bias voltage line 5; the repair controller 4 is used to couple the opposite ends of the target segment 50 when the target segment 50 is disconnected; that is, when the target segment 50 connected in parallel with the repair controller 4 is disconnected, the repair controller 4 is connected in parallel with the target segment 50. The device 4 can couple the opposite ends of the target segment 50, so that the repair controller 4 can divide the reverse bias voltage loaded on both ends of the photosensitive collector 3, so that the reverse bias voltage loaded on both ends of the photosensitive collector 3 is less than the preset voltage value; even for the photosensitive collector 3 with a thinner I layer, when the current is too large, the reverse bias voltage loaded on both ends of the photosensitive collector 3 can be reduced through the voltage division effect of the repair controller, so that the response current flowing through the photosensitive collector 3 with a thinner I layer is roughly equivalent to the response current of the photosensitive collector 3 with a normal thickness of the I layer, effectively avoiding the photosensitive collector 3 with a thinner I layer from having a high order of magnitude current response under the same reverse bias voltage, thereby improving the texture recognition accuracy.

[0079] Although the preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0080] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A texture recognition substrate, characterized in that: include: A base substrate and a plurality of texture sensing units arranged in an array on the base substrate; Each of the texture sensing units includes a photosensor, at least one repair controller and a reverse bias voltage line; The reverse bias voltage line is located on a side of the photosensitive collector away from the substrate and is coupled to one end of the photosensitive collector, and the repair controller is coupled in parallel to a target segment of the reverse bias voltage line; The repair controller is used to couple the opposite ends of the target segment when the target segment is disconnected, and divide the reverse bias voltage loaded on the two ends of the photosensitive collector so that the reverse bias voltage value loaded on the two ends of the photosensitive collector is less than a preset voltage value.

2. The texture recognition substrate according to claim 1, wherein: The repair controller includes a repair transistor, a gate of the repair transistor is coupled to the repair control terminal, a first electrode of the repair transistor is coupled to the first terminal of the target segment, and a second electrode of the repair transistor is coupled to the second terminal of the target segment.

3. The texture recognition substrate according to claim 2, wherein: The texture sensing unit further includes a switch controller coupled to the other end of the photosensitive collector, and the switch controller and the repair controller are both located between the substrate and the photosensitive collector.

4. The texture recognition substrate according to claim 3, wherein: The switch controller includes a switch transistor, a gate of the switch transistor is coupled to the collection control terminal, a first electrode of the switch transistor is coupled to the first electrode of the photosensitive collector, and a second electrode of the switch transistor is coupled to the signal readout terminal.

5. The texture recognition substrate according to claim 4, wherein: There are at least two repair controllers, and the width-to-length ratios of the repair transistors are equal and greater than the width-to-length ratio of the switch transistor.

6. The texture recognition substrate according to claim 4, wherein: The orthographic projection of each repair transistor on the base substrate does not overlap with the orthographic projection of the switch transistor on the base substrate.

7. A texture recognition device, characterized in that: include: The texture recognition substrate according to any one of claims 1 to 6.

8. A method for repairing a texture recognition substrate according to any one of claims 1 to 6, characterized in that: include: During the testing phase, a test current value flowing through the photosensitive collector is obtained; If it is determined that the test current value is greater than the preset current value, disconnecting the target segment; The at least one repair controller is controlled to be turned on to couple the opposite ends of the target segment.

9. The repair method according to claim 8, wherein: There are at least two repair controllers, and the method further includes: The repair controllers are controlled to be turned on alternately.

10. The repair method according to claim 9, wherein: The durations of the alternating conduction of the repair controllers are the same.

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