A display panel

Abstract

The embodiment of the present application provides a display panel, which includes an array substrate, an insulating layer, and an electrode layer, and an adhesive layer and a laser absorption layer are further provided in the film layer structure of the display panel. The adhesive layer is provided on the surface of the sub-electrode layer close to the side of the panel insulating layer, and the laser absorption layer is provided on any film layer between the array substrate and the electrode layer of the panel, and the adhesive layer is provided to improve the adhesion between the sub-electrode layer and the insulating layer, and the laser absorption layer is provided to effectively absorb or reflect high-energy laser light, so as to prevent the thin film transistor device at the bottom from being affected when the film layer is etched, and effectively improve the performance and reliability of the display panel.

Description

Technical Field

[0001] The present invention relates to the technical field of display panel manufacturing, and in particular to a display panel. Background Art

[0002] With the continuous improvement of display panel manufacturing technology and manufacturing process, people have higher and higher requirements on the performance of the manufactured display panels and devices.

[0003] Display panels are widely used in various consumer electronic products such as mobile phones and televisions due to their advantages of high image quality, power saving, light and thin body, and wide range of applications, becoming the mainstream device in display devices. Among them, the display panel is composed of multiple film layers and devices. Therefore, in the preparation process, ensuring the performance of each film layer and device will be conducive to improving the comprehensive performance of the display panel. However, in the preparation process of existing display panels, overlapping the electrodes of the sub-board with the motherboard is one of the most important links in the entire process. At present, the commonly used splicing method is to use a laser to ablate the buffer layer above the patterned electrode layer and realize the laser drilling process. However, in the process of ablating the buffer layer with a laser, the electrode layer is prone to tearing and other problems between the insulating layer of the panel, and the higher laser energy can easily penetrate into the bottom film layer, which in turn affects the performance of the thin film transistor device and causes the display panel to have poor quality problems, which is not conducive to the improvement and improvement of the comprehensive performance of the display panel.

[0004] To sum up, in the existing display panel preparation process, when using laser to etch and ablate the buffer film layer, tearing problems are likely to occur between the electrode layer and the isolation layer of the panel, and the higher laser energy is likely to penetrate into the bottom film layer and affect the performance of the thin film transistor, which is not conducive to improving the overall performance of the display panel. Summary of the invention

[0005] The embodiment of the present invention provides a display panel to effectively improve the comprehensive performance of the display panel and prevent tearing between the electrode layer and the insulating layer of the panel during the preparation of the display panel, thereby preventing quality problems such as degradation of the performance of the display panel.

[0006] To solve the above technical problems, the technical methods provided by the embodiments of the present invention are as follows:

[0007] According to a first aspect of an embodiment of the present invention, a display panel is provided, the display panel comprising:

[0008] An array substrate;

[0009] an insulating layer, wherein the insulating layer is disposed on the array substrate;

[0010] an electrode layer, the electrode layer being disposed on the insulating layer; and

[0011] A laser absorption layer is provided on any film layer between the array substrate and the electrode layer, and a through hole is provided on the laser absorption layer, and the through hole is provided in a region corresponding to the electrode layer.

[0012] According to an embodiment of the present invention, the display panel further includes an adhesive layer, and the adhesive layer is disposed on a surface of the electrode layer close to a side of the insulating layer.

[0013] According to an embodiment of the present invention, the display panel further includes a buffer layer, the buffer layer is disposed on the array substrate, the laser absorption layer is disposed on the buffer layer, and the insulation layer is disposed on the laser absorption layer.

[0014] According to one embodiment of the present invention, the isolation layer includes a first isolation layer and a second isolation layer, the first isolation layer is arranged on the array substrate, the second isolation layer is arranged on the first isolation layer, and the laser absorption layer is arranged between the first isolation layer and the second isolation layer.

[0015] According to an embodiment of the present invention, the laser absorption layer is an ultraviolet band absorption film layer.

[0016] According to an embodiment of the present invention, the electrode layer includes a sub-electrode layer and a connecting electrode connected to the sub-electrode layer, the sub-electrode layer is arranged on the insulating layer, and the connecting electrode is connected to the array substrate through a via hole.

[0017] According to an embodiment of the present invention, a through hole structure is provided on the laser absorption layer, the connecting electrode is inserted into the through hole, and the connecting electrode does not contact the inner wall of the through hole of the laser absorption layer.

[0018] According to an embodiment of the present invention, the adhesion layer is patterned, and a chemical bond of a cross-linking structure is formed between the surface of the adhesion layer and the insulating layer.

[0019] According to an embodiment of the present invention, the material of the adhesion layer includes titanium, and the material of the insulation layer includes SiOx.

[0020] According to one embodiment of the present invention, the structural formula of the chemical bond of the cross-linked structure is:

[0021]

[0022] In summary, the beneficial effects of the embodiments of the present invention are:

[0023] An embodiment of the present invention provides a display panel. In order to improve the performance and reliability of the display panel, in the embodiment of the present application, when preparing and forming the display panel, an adhesion layer and a laser absorption layer are provided in the film layer structure of the display panel. The adhesion layer is provided on the surface of the sub-electrode layer close to the side of the panel insulation layer, and the laser absorption layer is provided on any film layer between the array substrate and the electrode layer of the panel, and the adhesion layer is provided to improve the adhesion between the sub-electrode layer and the insulation layer, and the laser absorption layer is provided to effectively absorb high-energy lasers, so as to prevent the thin film transistor device at the bottom from being affected when the film layer is etched, and effectively improve the performance and reliability of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] The technical solutions and other beneficial effects of the present invention will be more apparent by describing in detail the specific embodiments of the present invention in conjunction with the accompanying drawings.

[0025] Figure 1 A schematic diagram showing defective areas and problems that are prone to occur during the preparation process of a display panel provided in the prior art;

[0026] Figure 2 A schematic diagram of the film layer structure of a display panel provided in an embodiment of the present application;

[0027] Figure 3 A graph showing the thickness of the laser absorption layer and the reflectivity of light provided in an embodiment of the present application;

[0028] Figure 4 A schematic top view of a laser absorption layer provided in an embodiment of the present application;

[0029] Figure 5 Another schematic top view of the laser absorption layer provided in the embodiment of the present application

[0030] Figure 6 A schematic diagram of the structure of another display panel provided in an embodiment of the present application. DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0032] In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features.

[0033] With the continuous development of display panel manufacturing technology, people have higher and higher requirements on the display performance and panel quality of display panels. Not only do they hope that the overall thickness of the display panel will become smaller and smaller, but they also hope that the display panel will have higher quality and reliability.

[0034] like Figure 1 As shown, Figure 1 The present invention is a schematic diagram of the display panel provided in the prior art that is prone to bad areas and problems during the preparation process. Specifically, the display panel includes an array substrate 100, an insulating layer 103 and a buffer layer 104. Among them, the insulating layer 103 is arranged on the array substrate 100, and the buffer layer 104 is arranged on the insulating layer 103. At the same time, the display panel also includes an electrode layer 105, and the electrode layer 105 is arranged on the insulating layer 103 to achieve the functions of fixing the electrode layer 105. In the preparation process of the display panel, after the buffer layer 104 is prepared, it is necessary to etch at the position corresponding to the electrode layer 105 to form a through hole 106 structure.

[0035] In the existing process, when forming the through hole 106, it is generally prepared by a laser drilling process. However, during the laser drilling process, the electrode plate of the electrode layer 105 is easily torn from the insulating layer 103 when heated and during the drilling process. At the same time, during the laser drilling process, since the laser has high energy, the high energy can easily penetrate the film layer and be transferred to the array substrate, so that a high heat is generated in the array substrate area 102 opposite to the through hole 106. The heat will affect the thin film transistor in the array substrate area 102, thereby reducing the performance of the thin film transistor.

[0036] The embodiments of the present application provide a novel display panel to effectively improve the problems of the electrode layer in the panel being easily torn from the insulating layer and the thin film transistor being easily affected by high temperature.

[0037] like Figure 2 As shown, Figure 2 A schematic diagram of the film structure of a display panel provided in an embodiment of the present application. The display panel includes an array substrate 200, an insulating layer, and a first buffer layer 204. In the embodiment of the present application, the insulating layer is described by taking the first insulating layer 201 and the second insulating layer 203 as examples. Among them, the first insulating layer 201 is arranged on the array substrate 200, the second insulating layer 203 is arranged above the first insulating layer 201, and at the same time, the first buffer layer 204 is arranged on the second insulating layer 203, and in the embodiment of the present application, a plurality of through holes 20 are also arranged on the buffer layer 204, and the plurality of through holes 20 can be arranged at intervals on the first buffer layer 204.

[0038] In the embodiment of the present application, the display panel further includes a laser absorption layer 202. When the laser absorption layer 202 is provided, the laser absorption layer 202 can be provided on the array substrate 200. Specifically, the laser absorption layer 202 is provided at the film layer position between the first insulating layer 201 and the second insulating layer 202, so that the first insulating layer 201, the laser absorption layer 202 and the second insulating layer 202 form a composite laminated structure. When strong light such as laser from the outside is irradiated, it needs to penetrate the above-mentioned film layers in sequence before further reaching the array substrate 200.

[0039] Specifically, when setting the laser absorption layer 202, the material of the laser absorption layer 202 can be an absorption film layer with an ultraviolet band. When the light waves in the ultraviolet band generated by the outside world are irradiated onto the laser absorption layer 202, the laser absorption layer 202 can effectively or mostly absorb the above light, thereby effectively preventing the strong light from affecting the devices in the underlying array substrate 200.

[0040] Preferably, the material of the laser absorption layer 202 may be an aluminum layer, such as Figure 3 As shown, Figure 3 The graph of the thickness of the laser absorption layer and the reflectivity of the light provided in the embodiment of the present application is shown in FIG. 1 , where Curve 1 is a light wave with a wavelength of 170 nm, and Curve 2 is a light wave with a wavelength of 210 nm.

[0041] According to the reflection between the aluminum layer and light waves of different wavelengths, it can be seen that as the thickness of the aluminum layer increases, the reflectivity of the laser absorption layer 202 to light gradually increases. When the thickness of the laser absorption layer 202 increases to a certain value, the reflectivity of the laser absorption layer 202 to light tends to be stable and does not continue to increase. That is, when the thickness of the laser absorption layer 202 is greater than 60nm, the reflectivity changes very little.

[0042] At the same time, combined with the above curve graph, and according to the light attenuation formula I = I0*exp(-a*d), where I0 is the initial light intensity, a is the absorption coefficient determined by the material, and d is the light penetration thickness, it can be seen that when the film thickness is increased, the laser energy reaching the array substrate 200 will be further reduced. Therefore, in the embodiment of the present application, the influence of strong light on the thin film transistor device can be effectively reduced by providing a laser absorption layer and an isolation layer.

[0043] In the embodiment of the present application, when the laser absorption layer 202 is set as an aluminum layer, the thickness of the aluminum layer is preferably 40nm-60nm. At this time, it has a good reflection effect on light and ensures that the display panel has a thinner thickness.

[0044] At the same time, in order to ensure the blocking effect on strong light, in the embodiment of the present application, when setting the first isolation layer 201 and the second isolation layer 203, the material of the first isolation layer 201 and the second isolation layer 203 can be selected from at least one or more composite film layers of SiOx, a-Si, and SiNx materials, thereby effectively ensuring the blocking effect of the above-mentioned film layers on strong light and ensuring the performance of the array substrate.

[0045] Furthermore, the laser absorption layer 202 in the embodiment of the present application may also be a laser blocking layer. Since laser processing is often used in the preparation process of the display panel, the laser blocking layer can effectively absorb high-energy lasers during laser processing, thereby reducing the impact of the laser on the array substrate 200, thereby effectively improving the performance and reliability of the display panel. Preferably, when the laser absorption layer 202 is provided, the laser absorption layer 202 may also be a material with a high absorption coefficient or a material such as a metal with a high specific heat capacity, a small thermal expansion coefficient, and high reflectivity.

[0046] Furthermore, when preparing the above-mentioned film layer, it can be prepared by plasma vapor deposition method, first preparing a first insulation layer 201, then depositing and forming a laser absorption layer 202 on the first insulation layer 201, and finally depositing and forming a second insulation layer 203 on the laser absorption layer 202.

[0047] Preferably, in the embodiment of the present application, the display panel further includes an electrode layer 21. The electrode layer 21 includes a sub-electrode layer 206 and a connecting electrode 205. The sub-electrode layer 206 is disposed on the second insulating layer 203, and the buffer layer 204 covers the sub-electrode layer 206. When the sub-electrode layer 206 is disposed, the sub-electrode layer 206 is disposed at a region corresponding to the through hole 20, and at least a portion of the sub-electrode layer 206 is exposed in the through hole 20 to achieve connection between subsequent devices.

[0048] Specifically, the sub-electrode layer 206 is connected to one end of the connecting electrode 205, and the other end of the connecting electrode 205 is connected to the array substrate 200. When the connecting electrode 205 is provided, a via hole 22 is provided in the corresponding film layer, and then the connecting electrode 205 is provided in the via hole 22, so as to realize the connection between the sub-electrode layer 206 and the array substrate 200, and then realize the transmission of the thin film transistor signal in the array substrate.

[0049] Among them, the via 22 can be correspondingly arranged in the lower area corresponding to the sub-electrode layer 206 to facilitate etching and setting of the connecting electrode 205. In the embodiment of the present application, the via 22 passes through the first isolation layer 201 and the second isolation layer 203 and extends to the surface of the array substrate 200.

[0050] In the embodiment of the present application, in order to effectively prevent the influence of high-intensity light on the performance of the film layer, the display panel further includes an adhesive layer 207. The adhesive layer 207 is arranged on the second insulating layer 203, and the adhesive layer 207 is arranged between the sub-electrode layer 206 and the second insulating layer 203, that is, the surface of the sub-electrode layer 206 close to the second insulating layer 203. In order to ensure the adhesion effect of the adhesive layer 207, the projection of the adhesive layer 207 on the surface of the second insulating layer 203 can be greater than or equal to the projection of the sub-electrode layer 206 on the surface of the second insulating layer 203, thereby increasing the bonding area between the adhesive layer 207 and the sub-electrode layer 206 and the second insulating layer 203. When the film layer is subjected to etching and other processes, it is ensured that the sub-electrode layer 206 and the second insulating layer 203 still have a high bonding performance, thereby preventing the sub-electrode layer 206 from tearing and other problems.

[0051] Specifically, when the adhesion layer 207 is provided, the material of the adhesion layer 207 can be selected from inorganic, organic and composite materials with high bonding strength. In the embodiment of the present application, the material of the adhesion layer 207 is described by taking titanium metal as an example.

[0052] In the embodiment of the present application, the material of the second insulating layer 203 is SiOx material, and the material of the adhesion layer 207 is Ti. Dense TiO2 is formed on the surface of the adhesion layer 207. When the adhesion layer 207 is attached to the second insulating layer 203, a chemical bond of a cross-linking structure is formed between the adhesion layer 207 and the second insulating layer 203. Due to the formation of the chemical bond of the cross-linking structure, the adhesion between the sub-electrode layer 206 and the second insulating layer 203 is effectively enhanced, thereby avoiding the problem of tearing of the sub-electrode layer 206.

[0053] In the embodiment of the present application, the structural formula of the chemical bond of the cross-linking structure formed between the adhesion layer 207 and the second insulating layer 203 is:

[0054]

[0055] Therefore, the TiO2 and SiO2 substrates in the embodiment of the present application are anchored by Ti-O-Si cross-linking bonds. As shown in the above chemical structure model, the existence of this chemical bond makes the materials have a stronger bonding force, thereby improving the bonding performance between the two film layers.

[0056] In the embodiment of the present application, since the connecting electrode 205 is connected to the sub-electrode layer 206 , a through hole is provided at a corresponding position when the adhesion layer 207 is provided to achieve electrical connection between the connecting electrode 205 and the sub-electrode layer 206 .

[0057] Further, such as Figure 4 , Figure 5 As shown, Figure 4-Figure 5 Schematic diagram of a top view of the laser absorption layer 202 provided in the embodiment of the present application. In the embodiment of the present application, it is necessary to set a via hole 22 in the film layer, and set a connecting electrode 205 in the via hole 22. Therefore, the laser absorption layer 202 in the embodiment of the present application needs to be patterned. When patterning, the laser absorption layer 202 can be set to a circular, polygonal or other shape in the area corresponding to the via hole 22, such as Figure 4 , Figure 5 Examples in .

[0058] In the embodiment of the present application, since the laser absorption layer 202 is set as an aluminum layer, there is a gap 401 between the laser absorption layer 202 and the connection electrode 205, that is, the connection electrode 205 and the inner wall of the via hole 22 do not contact each other, thereby ensuring the normal operation of the display panel.

[0059] like Figure 6 As shown, Figure 6 Schematic diagram of another display panel provided in an embodiment of the present application. Further, the display panel in the embodiment of the present application further includes a second buffer layer 601. The second buffer layer 601 is disposed on the array substrate 200. In this case, the second buffer layer 601 can be disposed as an inorganic film layer. At the same time, after the second buffer layer 601 is disposed, Figure 1 The film layer structures shown in the figure are arranged to effectively avoid the influence of high-intensity light from the outside on the thin film transistor devices in the array substrate.

[0060] Furthermore, when the second buffer layer 601 is provided, the position of the laser absorption layer 202 can also be changed. In this case, the laser absorption layer 202 is not limited to being provided between the first insulating layer, but can be provided on any film layer between the array substrate 200 and the sub-electrode layer 206. If the laser absorption layer 202 is provided on the second buffer layer 601, when the high-intensity light from the outside sequentially passes through each film layer and reaches the laser absorption layer 202, the laser absorption layer 202 can still effectively absorb or reflect the high-intensity light, thereby effectively protecting the thin film transistor device in the bottom array substrate 200.

[0061] A display panel provided in an embodiment of the present invention is introduced in detail above. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present invention. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A display panel, characterized in that: include: An array substrate; an insulating layer, wherein the insulating layer is disposed on the array substrate; an electrode layer, wherein the electrode layer is disposed on the insulating layer; as well as, a laser absorption layer, wherein the laser absorption layer is disposed on any film layer between the array substrate and the electrode layer, and the laser absorption layer is provided with a through hole, and the through hole is disposed in a region corresponding to the electrode layer; The display panel further comprises an adhesive layer, wherein the adhesive layer is arranged on a surface of the electrode layer close to a side of the insulating layer; The adhesion layer is patterned, and a chemical bond with a cross-linking structure is formed between the surface of the adhesion layer and the insulating layer; The structural formula of the chemical bond of the cross-linked structure is:

2. The display panel according to claim 1, characterized in that: The display panel further includes a buffer layer, wherein the buffer layer is disposed on the array substrate, the laser absorption layer is disposed on the buffer layer, and the insulating layer is disposed on the laser absorption layer.

3. The display panel according to claim 1, characterized in that: The insulating layer includes a first insulating layer and a second insulating layer, the first insulating layer is arranged on the array substrate, the second insulating layer is arranged on the first insulating layer, and the laser absorption layer is arranged between the first insulating layer and the second insulating layer.

4. The display panel according to claim 1, characterized in that: The laser absorption layer is an ultraviolet band absorption film layer.

5. The display panel according to claim 1, characterized in that: The electrode layer includes a sub-electrode layer and a connecting electrode connected to the sub-electrode layer. The sub-electrode layer is arranged on the insulating layer. The connecting electrode is connected to the array substrate through a via hole.

6. The display panel according to claim 5, characterized in that: The connection electrode is inserted into the through hole, and the connection electrode does not contact the inner wall of the through hole of the laser absorption layer.

7. The display panel according to claim 1, characterized in that: The material of the adhesion layer includes titanium, and the material of the insulation layer includes SiOx.

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