Semiconductor device and method for manufacturing semiconductor device

Abstract

A semiconductor device includes a semiconductor element (30), an input lead, a plurality of first drive leads (60) formed of a metal sheet in a strip shape as viewed in a thickness direction (Z) and connecting a source electrode of the semiconductor element (30) and the input lead. The first drive lead (60) has at least a metal plate (60A) connected to the semiconductor element (30) and a metal plate (60B) laminated to the metal plate (60A). The metal plate (60A) has a first connection portion (61A) connected to the semiconductor element (30), and the metal plate (60B) has a first connection portion (61B) connected to the first connection portion (61A). The first connection portions (61A, 61B) are laminated in the thickness direction (Z).

Description

Technical Field

[0001] This invention relates to a semiconductor device and a method for manufacturing a semiconductor device. Background Technology

[0002] For example, semiconductor devices are known to connect a driving electrode of a semiconductor element and a conductive component, which is disposed outside the semiconductor element and serves as a conductor, via a wire-like thread. Since a large current is supplied to the semiconductor device, a structure has been proposed that uses a strip-like terminal to connect the driving electrode and the conductive component instead of a wire (see, for example, Patent Document 1).

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-87741 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] However, even with a structure that connects the drive electrode and the conductive component via terminals, it is difficult to supply a large current to the semiconductor device when the contact area between the drive electrode and the terminal is small, or when the terminal itself is thin and has a small width.

[0008] The purpose of this invention is to provide a semiconductor device capable of increasing the allowable current and a method for manufacturing the semiconductor device.

[0009] Solution for solving the problem

[0010] A semiconductor device for solving the above-mentioned problems includes a semiconductor element, a driving conductor, and a plurality of driving connection members. The semiconductor element has a main surface on which a driving electrode is formed. The driving conductor has a driving connection surface facing the same direction as the main surface of the element. The plurality of driving connection members connect the driving electrode and the driving conductor, and are formed from a thin strip that is strip-shaped when viewed from a first direction perpendicular to the main surface of the semiconductor element. The plurality of driving connection members have at least a first connection member connected to the semiconductor element and a second connection member connected to the first connection member. The first connection member has a first element-side connection portion connected to the driving electrode. The second connection member has a second element-side connection portion connected to the first element-side connection portion. The first element-side connection portion and the second element-side connection portion are stacked in the first direction.

[0011] According to this structure, the cross-sectional area of ​​the drive connection member is increased when the first element-side connection portion and the second element-side connection portion are stacked, by means of a planar section cut along the first direction and in a direction orthogonal to the first direction. Therefore, the upper limit of the current that can flow from the semiconductor element into the drive connection member, i.e., the allowable current, can be increased.

[0012] A method for manufacturing a semiconductor device that solves the above-mentioned problems includes a semiconductor element having a main surface on which a driving electrode is formed, a driving conductor having a driving connection surface oriented in the same direction as the main surface of the element, and a plurality of driving connection members connecting the driving electrode and the driving conductor and formed from a thin plate that is strip-shaped when viewed from a first direction perpendicular to the main surface of the semiconductor element. The method includes the following steps: a connection member preparation step, which prepares at least a first connection member to be connected to the semiconductor element and a second connection member to be connected to the first connection member as the plurality of driving connection members; a driving electrode connection step, which connects the first element-side connection portion of the first connection member to the driving electrode by laser processing; and a first stacking connection step, which connects the second element-side connection portion of the second connection member to the first element-side connection portion by laser processing in a state in which the second element-side connection portion of the second connection member is stacked on the first element-side connection portion in the first direction.

[0013] According to this structure, the cross-sectional area of ​​the drive connection member is increased by using a stacked structure of the first element-side connection portion and the second element-side connection portion, where the plane is cut along the first direction and in a direction orthogonal to the first direction. Therefore, it is possible to increase the upper limit of the current that can flow from the semiconductor element into the drive connection member, i.e., the allowable current.

[0014] Furthermore, since the first element-side connection is joined to the drive electrode via laser processing, the load applied to the drive electrode is smaller compared to, for example, joining the first element-side connection to the drive electrode via ultrasonic welding. Additionally, the contact area between the first element-side connection and the drive electrode is larger compared to, for example, joining the first element-side connection to the drive electrode via ultrasonic welding. Therefore, the allowable current from the semiconductor element to the drive connection member can be increased.

[0015] Invention Effects

[0016] According to the above-described semiconductor device and its manufacturing method, the allowable current can be increased. Attached Figure Description

[0017] Figure 1 This is a perspective view of the semiconductor device according to the first embodiment.

[0018] Figure 2 From Figure 1 A three-dimensional view of a semiconductor device in the state of having the sealing resin removed.

[0019] Figure 3 yes Figure 1 A top view of a semiconductor device.

[0020] Figure 4 It is about Figure 3 The semiconductor device is shown in a top view with double-dotted lines indicating the semiconductor device sealed with resin.

[0021] Figure 5 yes Figure 4 Enlarged view of the semiconductor element and its surroundings.

[0022] Figure 6 yes Figure 1 A side view of a semiconductor device.

[0023] Figure 7 yes Figure 1 A bottom view of a semiconductor device.

[0024] Figure 8 It is about Figure 1 semiconductor devices from and Figure 6 Side views viewed from different directions.

[0025] Figure 9 It is about Figure 1 semiconductor devices from and Figure 6 as well as Figure 8 Side views viewed from different directions.

[0026] Figure 10 (a) is along Figure 4 (a) is a cross-sectional view along line 10-10, and (b) is an enlarged view of the semiconductor element.

[0027] Figure 11 (a) is along Figure 4 (a) is a cross-sectional view along line 11-11, and (b) is an enlarged view of the semiconductor element.

[0028] Figure 12 yes Figure 1 A three-dimensional view of the first driving lead in a semiconductor device.

[0029] Figure 13 yes Figure 12 An exploded 3D view of the first driving lead wire.

[0030] Figure 14 This is a top view showing the bonding structure between the first driving lead and the semiconductor element.

[0031] Figure 15 It is along Figure 14 A sectional view along line 15-15.

[0032] Figure 16 This is a top view showing the connection structure between the first drive lead and the input lead.

[0033] Figure 17 It is along Figure 16 A sectional view along line 17-17.

[0034] Figure 18 yes Figure 1 A three-dimensional view of the second driving lead in a semiconductor device.

[0035] Figure 19 yes Figure 18 An exploded 3D view of the second drive lead wire.

[0036] Figure 20 This is a top view showing the bonding structure between the second drive lead and the semiconductor element.

[0037] Figure 21 It is along Figure 20 A sectional view along line 21-21.

[0038] Figure 22 This is a top view showing the connection structure between the second drive lead and the conductive component.

[0039] Figure 23 It is along Figure 22 A sectional view along line 23-23.

[0040] Figure 24 This is a flowchart of a method for manufacturing a semiconductor device according to the first embodiment.

[0041] Figure 25 This is an explanatory diagram illustrating an example of the third bonding process in a semiconductor device manufacturing method.

[0042] Figure 26 This is an explanatory diagram illustrating an example of the third bonding process in a semiconductor device manufacturing method.

[0043] Figure 27 This is an explanatory diagram illustrating an example of the third bonding process in a semiconductor device manufacturing method.

[0044] Figure 28 This is a perspective view showing the connection structure between the semiconductor element and the drive lead in the semiconductor device of the first comparative example.

[0045] Figure 29 This is a perspective view showing the connection structure between the semiconductor element and the drive lead in the semiconductor device of the second comparative example.

[0046] Figure 30 This is a perspective view of the semiconductor device in the second embodiment, showing the semiconductor device in a state where the sealing resin has been removed from the semiconductor device.

[0047] Figure 31 This is a top view of the semiconductor device of the second embodiment, with the sealing resin indicated by double-dotted lines.

[0048] Figure 32 (a) is along Figure 31 (a) is a cross-sectional view along line 32-32, and (b) is an enlarged view of the semiconductor element and its surroundings.

[0049] Figure 33 This is a perspective view of the semiconductor device according to the third embodiment.

[0050] Figure 34 This is a perspective view of a semiconductor device according to the fourth embodiment, showing the state of a semiconductor device from which sealing resin, input leads, output leads, control leads, and detection leads are removed.

[0051] Figure 35 It is along Figure 34 A sectional view along line 35-35.

[0052] Figure 36 This is a perspective view of a semiconductor device according to the fifth embodiment, in which the sealing resin is indicated by a double-dotted line.

[0053] Figure 37 It is along Figure 36 A sectional view along line 37-37.

[0054] Figure 38 This is a top view showing the connection structure between the second drive lead and the semiconductor element in a modified semiconductor device.

[0055] Figure 39A This is a top view of the second connection portion of the first drive lead in a modified semiconductor device.

[0056] Figure 39B It is along Figure 39A A sectional view along line 39B-39B.

[0057] Figure 40A This is a top view of the second connection portion of the first drive lead in a modified semiconductor device.

[0058] Figure 40B It is along Figure 40A A sectional view along line 40B-40B.

[0059] Figure 41AThis is a top view of the second connection portion of the first drive lead in a modified semiconductor device.

[0060] Figure 41B It is along Figure 41A A sectional view along line 41B-41B.

[0061] Figure 41C It is along Figure 41A A sectional view of line 41C-41C.

[0062] Figure 42 This is a cross-sectional view showing the connection structure between the second driving lead and the semiconductor element and conductive component in a modified semiconductor device.

[0063] Figure 43 This is a cross-sectional view showing the connection structure between the second driving lead and the semiconductor element and conductive component in a modified semiconductor device.

[0064] Figure 44 This is a cross-sectional view showing the connection structure between the second driving lead and the semiconductor element in a modified semiconductor device.

[0065] Figure 45 This is a cross-sectional view showing the connection structure between the second driving lead and the semiconductor element in a modified semiconductor device.

[0066] Figure 46 This is a cross-sectional view showing the bonding structure of the second driving lead, semiconductor element, and conductive component in a modified semiconductor device. Detailed Implementation

[0067] Hereinafter, embodiments of a semiconductor device and a method for manufacturing a semiconductor device will be described with reference to the accompanying drawings. The embodiments shown below are illustrative of structures and methods for embodying technical concepts, and are not intended to limit the materials, shapes, structures, arrangements, dimensions, etc., of each structural component to the following content. Various modifications can be added to the following embodiments.

[0068] [First Implementation Method]

[0069] (Structure of a semiconductor device)

[0070] Reference Figures 1 to 23 The structure of the semiconductor device 1A according to the first embodiment will be described. Furthermore, for ease of explanation, in Figure 2 In the semiconductor device 1A, the sealing resin 10 is omitted. Figure 4 as well as Figure 5 The sealant 10 is indicated by a double-dotted line.

[0071] like Figure 1 as well as Figure 2 As shown, the semiconductor device 1A includes a sealing resin 10 serving as a frame, a plurality of leads 20 having portions protruding from the sealing resin 10, a plurality of semiconductor elements 30 electrically connected to the plurality of leads 20, and a support substrate 40 supporting the plurality of leads 20 and the plurality of semiconductor elements 30. The semiconductor device 1A, for example, has a half-bridge type switching circuit. In the following description, for ease of explanation, mutually orthogonal directions are defined as the horizontal direction X, the vertical direction Y, and the thickness direction Z. The horizontal direction X, for example, in the semiconductor device 1A, represents the direction in which the input leads 21, 22 and the output lead 23, described later, are arranged. The vertical direction Y represents the direction orthogonal to the horizontal direction X when viewed from the thickness direction of the semiconductor device 1A (hereinafter referred to as "top view").

[0072] like Figure 1 As shown, the sealing resin 10 is formed in a generally flat plate shape. Figure 3 As shown, the sealing resin 10 has a rectangular shape when viewed from above. In this embodiment, the sealing resin 10 has a rectangular shape with the horizontal direction X as the long side and the vertical direction Y as the short side. Furthermore, the shape of the sealing resin 10 can be arbitrarily changed. For example, the sealing resin 10 can be a square. Additionally, a thermosetting resin can be used as the material for the sealing resin 10. In this embodiment, a black epoxy resin can be used as the material for the sealing resin 10.

[0073] like Figure 1 As shown, the sealing resin 10 has a resin top surface 15 and a resin back surface 16 facing opposite sides in the thickness direction Z, and a first resin side surface 11, a second resin side surface 12, a third resin side surface 13, and a fourth resin side surface 14 formed between the resin top surface 15 and the resin back surface 16 in the thickness direction Z. In this embodiment, the first resin side surface 11 and the second resin side surface 12 face opposite sides in the transverse direction X. The first resin side surface 11 and the second resin side surface 12 extend along the longitudinal direction Y. The third resin side surface 13 and the fourth resin side surface 14 face opposite sides in the longitudinal direction Y. The third resin side surface 13 and the fourth resin side surface 14 extend along the transverse direction X. In top view, the first resin side surface 11 and the second resin side surface 12 are the short sides of the sealing resin 10, and the third resin side surface 13 and the fourth resin side surface 14 are the long sides of the sealing resin 10.

[0074] like Figure 6 as well as Figure 7As shown, grooves 17 and 18 are formed on the resin back side 16 side of the sealing resin 10, recessed from the resin back side 16 in the thickness direction Z. Grooves 17 are provided at their ends on the first resin side side 11 side of the sealing resin 10 in the transverse direction X. Three grooves 17 are provided spaced apart from each other in the transverse direction X. Grooves 18 are provided at their ends on the second resin side side 12 side of the sealing resin 10 in the transverse direction X. Three grooves 18 are provided spaced apart from each other in the transverse direction X. Grooves 17 and 18 extend along the longitudinal direction Y. In one example, grooves 17 and 18 are formed from the third resin side side 13 to the fourth resin side side 14 of the sealing resin 10. Furthermore, the number of grooves 17 and the number of grooves 18 can be arbitrarily changed. Alternatively, at least one of the grooves 17 and 18 can be omitted from the sealing resin 10.

[0075] like Figure 1 as well as Figure 2 As shown, the plurality of leads 20 in this embodiment have two input leads 21, 22, an output lead 23, a pair of control leads 24A, 24B, a pair of detection leads 25A, 25B, a plurality of simulation leads 26, and a pair of side leads 27A, 27B. Figure 9 As shown, input leads 21 and 22 protrude from the first resin side 11 of the sealing resin 10. Side lead 27A protrudes from the first resin side 11. Figure 6 as well as Figure 8 As shown, output lead 23 protrudes from the second resin side 12 of the sealing resin 10. Side lead 27B protrudes from the second resin side 12. Figure 3 as well as Figure 4 As shown, a pair of control leads 24A and 24B, a pair of detection leads 25A and 25B, and multiple simulated leads 26 protrude from the third resin side 13 of the sealing resin 10.

[0076] Furthermore, the positions of the pair of control leads 24A and 24B, the pair of detection leads 25A and 25B, and the plurality of simulated leads 26 protruding from the resin side of the sealing resin 10 can be arbitrarily changed. For example, a portion of the pair of control leads 24A and 24B, the pair of detection leads 25A and 25B, and the plurality of simulated leads 26 can protrude from the third resin side 13, while the remainder protrudes from the fourth resin side 14.

[0077] like Figure 2 as well as Figure 4As shown, the semiconductor device 1A includes multiple semiconductor elements 30 as switching elements constituting a switching circuit. The multiple semiconductor elements 30 are sealed with sealing resin 10. Each semiconductor element 30 is constructed using a semiconductor material with SiC (silicon carbide) as its main component. Furthermore, the semiconductor material is not limited to SiC and can be Si (silicon), GaAs (gallium arsenide), or GaN (gallium nitride), etc. In this embodiment, each semiconductor element 30 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). Furthermore, the multiple semiconductor elements 30 are not limited to MOSFETs and can be field-effect transistors including MISFET (Metal-Insulator-Semiconductor FET), bipolar transistors such as IGBT (Insulated Gate Bipolar Transistor), IC chips such as LSI, etc. In this embodiment, each semiconductor element 30 is a single element and is an n-channel MOSFET. Each semiconductor element 30 is a high-speed switching element capable of responding to drive signals with frequencies above 1 kHz and below several hundred kHz. Preferably, the semiconductor element 30 is a high-speed switching element capable of responding to drive signals with frequencies above 1 kHz and below 100 kHz. In this embodiment, the semiconductor element 30 performs high-speed switching according to a drive signal with a frequency of 100 kHz.

[0078] In this embodiment, the plurality of semiconductor elements 30 can be distinguished into four first semiconductor elements 30U constituting the upper branch of the switching circuit and four second semiconductor elements 30L constituting the lower branch of the switching circuit. The semiconductor device 1A of this embodiment has a structure in which four switching branches composed of first semiconductor elements 30U and second semiconductor elements 30L connected in series are connected in parallel. Furthermore, the number of semiconductor elements 30 can be arbitrarily changed according to the performance requirements of the semiconductor device 1A.

[0079] The detailed structure of the plurality of semiconductor elements 30 will be described below. Since the plurality of semiconductor elements 30 have identical structures, the structure of the predetermined semiconductor elements 30 will be described, and the structures of the remaining semiconductor elements 30 will be indicated by the same symbol for elements with the same structure, and their descriptions will be omitted.

[0080] like Figure 2 As shown, the semiconductor element 30 is formed in a plate shape. Figure 5As shown, the semiconductor element 30 is square in shape when viewed from above. Furthermore, the shape of the semiconductor element 30 when viewed from above can be arbitrarily changed. For example, the shape of the semiconductor element 30 when viewed from above can be a rectangle with one of the horizontal direction X and the vertical direction Y being the longer side, and the other of the horizontal direction X and the vertical direction Y being the shorter side.

[0081] like Figure 10 As shown in (b), the semiconductor element 30 has a main surface 31 and a back surface 32 that face opposite each other in the thickness direction Z. Figure 5 as well as Figure 10 As shown in (b), a source electrode 33 serving as a main-side driving electrode (driving electrode) and a gate electrode 34 serving as a control electrode are provided on the main surface 31 of the device, and a drain electrode 35 serving as a back-side driving electrode is provided on the back surface 32 of the device. A gate voltage for driving the semiconductor device 30 is applied to the gate electrode 34. When the gate voltage applied to the gate electrode 34 is above a critical value, a drain current flows through the drain electrode 35 and a source current flows through the source electrode 33.

[0082] like Figure 5 As shown, in top view, the area where the active electrode 33 is formed is larger than the area where the gate electrode 34 is formed. The source electrode 33 is formed on a large portion of the main surface 31 of the device. The gate electrode 34 is disposed within the recess 33a formed in the source electrode 33. Figure 10 As shown, the drain electrode 35 is formed integrally on the back side 32 of the component.

[0083] like Figure 5 As shown, an insulating film 36 is disposed on the source electrode 33 and the gate electrode 34. The insulating film 36 has electrical insulation properties. In top view, the insulating film 36 surrounds the source electrode 33 and the gate electrode 34. The insulating film 36 has a structure in which layers such as SiO2 (silicon dioxide), SiN4 (silicon nitride), and polycresol are sequentially stacked from the main surface 31 of the device. Furthermore, instead of the polycresol layer, the insulating film 36 can be a polyimide layer.

[0084] like Figure 4 As shown, each semiconductor element 30 is electrically connected to a pair of input leads 21, 22, an output lead 23, a pair of control leads 24A, 24B, and a pair of detection leads 25A, 25B. In this embodiment, each semiconductor element 30 is not electrically connected to the plurality of simulated leads 26. The input leads 21 are electrically connected to the drain electrode 35 of each first semiconductor element 30U (see reference). Figure 11 (b)), the input lead 22 is electrically connected to the source electrode 33 of each second semiconductor element 30L (refer to...). Figure 5 The output lead 23 is electrically connected to the source electrode 33 of each first semiconductor element 30U (see reference). Figure 5) and the drain electrode 35 of each second semiconductor element 30L (refer to Figure 10 ).like Figure 5 As shown, control lead 24A is electrically connected to the gate electrode 34 of each first semiconductor element 30U, and control lead 24B is electrically connected to the gate electrode 34 of each second semiconductor element 30L. Detection lead 25A is electrically connected to the source electrode 33 of each first semiconductor element 30U, and detection lead 25B is electrically connected to the source electrode 33 of each second semiconductor element 30L. The following describes the configuration structure of each semiconductor element 30 and each lead, as well as the detailed structure of each lead.

[0085] like Figure 4 As shown, the semiconductor device 1A includes a support substrate 40. Each semiconductor element 30, a pair of input leads 21 and 22, an output lead 23, and a pair of side leads 27A and 27B are mounted on the support substrate 40. A pair of control leads 24A, a pair of detection leads 25A and 25B, and a plurality of simulated leads 26 are not mounted on the support substrate 40. The pair of control leads 24A, the pair of detection leads 25A and 25B, and the plurality of simulated leads 26 are located beside the support substrate 40 in the longitudinal direction Y.

[0086] The support substrate 40 includes an insulating substrate 41, a pair of conductive components 42A and 42B, a pair of insulating layers 43A and 43B, a pair of gate layers 44A and 44B (as an example of a control conductor), and a pair of detection layers 45A and 45B. The support substrate 40 is structured by sequentially stacking the insulating substrate 41, the pair of conductive components 42A and 42B, and the pair of insulating layers 43A and 43B. The gate layer 44A and the detection layer 45A are stacked on the insulating layer 43A, and the gate layer 44B and the detection layer 45B are stacked on the insulating layer 43B.

[0087] The insulating substrate 41 has electrical insulation properties. The insulating substrate 41 is, for example, a ceramic with excellent thermal conductivity. Examples of such ceramics include AlN (aluminum nitride), SiN (silicon nitride), and Al2O3 (aluminum oxide). In this embodiment, the insulating substrate 41, viewed from above, has a rectangular shape with the longitudinal direction Y being the long side direction and the transverse direction X being the short side direction. Figure 10 As shown, the insulating substrate 41 has a substrate main surface 41a and a substrate back surface 41b that face opposite sides in the thickness direction Z. A pair of conductive members 42A and 42B are disposed on the substrate main surface 41a. The substrate main surface 41a, together with the pair of conductive members 42A and 42B, a pair of insulating layers 43A and 43B, a pair of gate layers 44A and 44B, and a pair of detection layers 45A and 45B, are sealed with sealing resin 10. Figure 7As shown, the back surface 41b of the substrate is exposed from the sealing resin 10. A heat dissipation device (not shown) is connected to the back surface 41b of the substrate. The back surface 41b of the substrate is disposed in the transverse direction between grooves 17 and 18 of the sealing resin 10. According to this structure, the surface distance between the input leads 21, 22 and the back surface 41b of the substrate increases through groove 17, and the surface distance between the output lead 23 and the back surface 41b of the substrate increases through groove 18. Therefore, the insulation withstand voltage of the semiconductor device 1A is improved. Furthermore, the structure of the insulating substrate 41 is not limited to the above structure and can be arbitrarily modified. In one example, the insulating substrate 41 is configured as two separate units corresponding to the conductive components 42A, 42B.

[0088] A pair of conductive components 42A and 42B are metal plates. The metal plates are made of Cu (copper) or a Cu alloy. The pair of conductive components 42A and 42B, together with multiple leads 20, form multiple conductive paths to the semiconductor element 30. The pair of conductive components 42A and 42B are disposed separately in the longitudinal direction Y on the substrate main surface 41a of the insulating substrate 41. The pair of conductive components 42A and 42B are bonded to the substrate main surface 41a by a bonding material such as silver paste or solder. The bonding material can be either a conductive material such as silver paste or solder, or an insulating material. In this embodiment, the thickness (Z dimension) of the pair of conductive components 42A and 42B is greater than the thickness (Z dimension) of the insulating substrate 41. In addition, the thickness (Z dimension) of the pair of conductive components 42A and 42B is greater than the thickness (Z dimension) of the semiconductor element 30, the input leads 21 and 22, and the output lead 23. The thickness of the pair of conductive components 42A and 42B is, for example, 0.4 mm to 3 mm. Furthermore, the surfaces of the pair of conductive components 42A and 42B can be covered with silver plating. The pair of conductive components 42A and 42B have the same shape. Viewed from above, each of the pair of conductive components 42A and 42B has a rectangular shape with the longitudinal direction Y as the long side and the transverse direction X as the short side.

[0089] like Figure 4 as well as Figure 10As shown, conductive component 42A is disposed in the transverse direction X near the first resin side 11 of the sealing resin 10, closer to conductive component 42B. Conductive component 42A is electrically connected to four first semiconductor elements 30U, input leads 21, and side leads 27A. Conductive component 42A has a main surface 42sa and a back surface 42ra facing opposite sides in the thickness direction Z. The main surface 42sa faces the same direction as the substrate main surface 41a of the insulating substrate 41 in the thickness direction Z. Additionally, the main surface 42sa faces the same direction as the element main surface 31 of the first semiconductor elements 30U in the thickness direction Z. Four first semiconductor elements 30U and the input leads 21 are disposed on the main surface 42sa. The back surface 42ra faces the same direction as the substrate back surface 41b of the insulating substrate 41 in the thickness direction Z. The back surface 42ra faces the same direction as the element back surface 32 of the first semiconductor elements 30U in the thickness direction Z. The back surface 42ra is connected to the substrate main surface 41a of the insulating substrate 41 via a bonding member. Four first semiconductor elements 30U are arranged separately in the longitudinal direction Y while aligned in the transverse direction X. The four first semiconductor elements 30U are disposed in the portion of the conductive member 42A near the conductive member 42B in the transverse direction X. An input lead 21 is disposed at the end of the conductive member 42A on the first resin side 11 side in the transverse direction X, and at the center of the conductive member 42A in the longitudinal direction Y. A side lead 27A is disposed at the end of the conductive member 42A on the first resin side 11 side in the transverse direction X, and at the end of the conductive member 42A on the third resin side 13 side in the longitudinal direction Y.

[0090] Conductive component 42B is disposed in the transverse direction X near the second resin side 12 of the sealing resin 10, closer to the conductive component 42A. Conductive component 42B is electrically connected to four second semiconductor elements 30L, output leads 23, and side leads 27B. Conductive component 42B has a main surface 42sb and a back surface 42rb facing opposite sides in the thickness direction Z. The main surface 42sb faces the same direction in the thickness direction Z as the substrate main surface 41a of the insulating substrate 41. Additionally, the main surface 42sb faces the same direction in the thickness direction Z as the element main surface 31 of the second semiconductor elements 30L. The back surface 42rb faces the same direction in the thickness direction Z as the substrate back surface 41b of the insulating substrate 41. The back surface 42rb faces the same direction in the thickness direction Z as the element back surface 32 of the second semiconductor elements 30L. Four second semiconductor elements 30L and output leads 23 are disposed on the main surface 42sb. The back side 42rb is connected to the substrate main surface 41a of the insulating substrate 41 via a bonding member. Four second semiconductor elements 31 are arranged separately in the longitudinal direction Y, aligned along the transverse direction X. Four second semiconductor elements 30L are disposed in the transverse direction X in the portion of the conductive member 42B near the conductive member 42A. Viewed from the transverse direction X, the four second semiconductor elements 30L are respectively disposed offset from the four first semiconductor elements 30U. Figure 4 As shown, four second semiconductor elements 30L and four first semiconductor elements 30U are alternately arranged in the longitudinal direction Y. Output lead 23 is disposed at the end of the second resin side 12 of the sealing resin 10 in the transverse direction X, and at the center of the conductive member 42B in the longitudinal direction Y. Side lead 27B is disposed at the end of the second resin side 12 of the conductive member 42B in the transverse direction X, and at the end of the third resin side 13 of the sealing resin 10 in the longitudinal direction Y.

[0091] A pair of insulating layers 43A and 43B are electrically insulating. The materials constituting the pair of insulating layers 43A and 43B are, for example, glass epoxy resin. The pair of insulating layers 43A and 43B are disposed away from the ground in the transverse direction X. Viewed from above, the pair of insulating layers 43A and 43B are respectively strips extending in the longitudinal direction Y.

[0092] The insulating layer 43A is bonded to the main surface 42sa of the conductive component 42A. Viewed from the transverse direction X, the insulating layer 43A is arranged to coincide with the four first semiconductor elements 30U, the input lead 21, and the side lead 27A. The insulating layer 43A is positioned in the transverse direction X near the first resin side surface 11 of the sealing resin 10, closer to the four first semiconductor elements 30U. Specifically, the insulating layer 43A is positioned in the transverse direction X near the first resin side surface 11 of the four first semiconductor elements 30U and adjacent to each of the first semiconductor elements 30U. Furthermore, the insulating layer 43A is positioned in the transverse direction X near the four first semiconductor elements 30U, closer to the input lead 21.

[0093] The insulating layer 43B is bonded to the main surface 42sb of the conductive component 42B. Viewed from the transverse direction X, the insulating layer 43B is arranged to coincide with the four second semiconductor elements 30L, the output lead 23, and the side lead 27B. The insulating layer 43B is disposed in the transverse direction X near the second resin side surface 12 of the sealing resin 10, closer to the four second semiconductor elements 30L. Specifically, the insulating layer 43B is disposed in the transverse direction X near the second resin side surface 12 of the four second semiconductor elements 30L and adjacent to each of the second semiconductor elements 30L. Furthermore, the insulating layer 43B is disposed in the transverse direction X near the four second semiconductor elements 30L, closer to the output lead 23.

[0094] A pair of gate layers 44A and 44B are conductive. The material constituting the pair of gate layers 44A and 44B is, for example, Cu. The shapes of the pair of gate layers 44A and 44B, viewed from above, are, for example, strips extending along the longitudinal direction Y.

[0095] A gate layer 44A is disposed on an insulating layer 43A. The gate layer 44A is disposed in the portion of the insulating layer 43A near the first resin side 11 in the transverse direction X. The gate layer 44A is connected to the gate electrode 34 of each first semiconductor element 30U (see reference 1) via a first control wire 51, which is an example of a control connection member described later. Figure 5 The gate layer 44A is connected to the control lead 24A via the first connection wire 53, which will be described later.

[0096] A gate layer 44B is disposed on an insulating layer 43B. The gate layer 44B is disposed in the portion of the insulating layer 43B in the lateral direction X, near the second resin side 12. The gate layer 44B is connected to the gate electrode 34 of each second semiconductor element 30L (see reference 1) via a second control wire 52, which is an example of a control connection member described later. Figure 5 The gate layer 44B is connected to the control lead 24B via the second connection wire 57, which will be described later.

[0097] A pair of detection layers 45A and 45B are conductive. The material constituting the pair of detection layers 45A and 45B is, for example, Cu. Viewed from above, the pair of detection layers 45A and 45B are, for example, strips extending along the longitudinal direction Y. In this embodiment, the size of the transverse direction X of the pair of detection layers 45A and 45B is equal to the size of the transverse direction X of the pair of gate layers 44A and 44B, and the size of the longitudinal direction Y of the pair of detection layers 45A and 45B is equal to the size of the longitudinal direction Y of the pair of gate layers 44A and 44B.

[0098] The detection layer 45A is disposed together with the gate layer 44A on the insulating layer 43A. The detection layer 45A is disposed such that it is separated from and adjacent to the gate layer 44A in the transverse direction X. In this embodiment, the detection layer 45A is disposed such that it is four times closer to the gate layer 44A than the first semiconductor element 30U in the transverse direction X. Furthermore, the placement of the detection layer 45A in the transverse direction X can be arbitrarily changed. For example, the detection layer 45A may be located closer to the first resin side 11 than the gate layer 44A in the transverse direction X. The detection layer 45A is connected to the source electrode 33 of each first semiconductor element 30U through the first detection wire 55 described later. In addition, the detection layer 45A is connected to the detection lead 25A through the first connection wire 54 described later.

[0099] The detection layer 45B is disposed on the insulating layer 43B together with the gate electrode 44B. The detection layer 45B is disposed such that it is separated from the gate electrode 44B and adjacent to the gate layer 44B in the lateral direction X. In this embodiment, the detection layer 45B is disposed such that it is four second semiconductor elements 30L closer to the gate layer 44B in the lateral direction X. Furthermore, the placement of the detection layer 45B in the lateral direction X can be arbitrarily changed. For example, the detection layer 45B may be closer to the output lead 23 in the lateral direction X than the gate layer 44B. The detection layer 45B is connected to the source electrode 33 of each first semiconductor element 30U through the second detection wire 56 described later. In addition, the detection layer 45B is connected to the detection lead 25B through the second connection wire 58 described later.

[0100] like Figure 10As shown, input leads 21 and 22 are metal plates. The metal plates are made of materials such as Cu or Cu alloys. In this embodiment, the thickness (dimension in the thickness direction Z) of input leads 21 and 22 is 0.8 mm, but is not limited to this. Input leads 21 and 22 are respectively arranged close to the first resin side 11 of the sealing resin 10. A power supply voltage is applied to input leads 21 and 22 respectively. In this embodiment, a first power supply voltage is applied to input lead 21, and a second power supply voltage lower than the first power supply voltage is applied to input lead 22. Thus, input lead 21 is the positive terminal (P terminal), and input lead 22 is the negative terminal (N terminal). In the thickness direction Z, input leads 21 and 22 are arranged to overlap each other. Input leads 21 and 22 are arranged apart in the thickness direction Z.

[0101] like Figure 4 As shown, the input lead 21 is formed as a flat plate extending in the transverse direction X. The input lead 21 has a pad portion 21a and a terminal portion 21b. In this embodiment, the pad portion 21a and the terminal portion 21b are integrally formed as a single component.

[0102] The pad portion 21a is the portion of the input lead 21 covered by the sealing resin 10. Multiple comb-like teeth 21c are provided on the end of the sealing resin 10 on the second resin side 12 side in the pad portion 21a. Each comb-like tooth 21c is conductively engaged with the main surface 42sa of the conductive member 42A. This engagement method can be laser welding using a laser, ultrasonic bonding, or bonding using a conductive bonding element. In this embodiment, each comb-like tooth 21c is disposed at the end of the sealing resin 10 on the first resin side 11 side in the main surface 42sa of the conductive member 42A, and at its center in the longitudinal direction Y. Multiple through holes (not shown) are provided in the portion of the pad portion 21a near the first resin side 11 of the sealing resin 10. Each through hole penetrates the pad portion 21a in the thickness direction Z. A portion of the sealing resin 10 enters each through hole. Therefore, the sealing resin 10 is difficult to separate from the input lead 21.

[0103] Terminal portion 21b is the part of the input lead 21 that protrudes from the first resin side 11 of the sealing resin 10. Viewed from above, terminal portion 21b has a rectangular shape with the long side in the horizontal direction X and the short side in the vertical direction Y.

[0104] The input lead 22 has a pad portion 22a and a terminal portion 22b. In this embodiment, the pad portion 22a and the terminal portion 22b are integrally formed as a single component.

[0105] The pad portion 22a is the portion of the input lead 22 covered by the sealing resin 10. The pad portion 22a can be divided into a plurality of (four in this embodiment) extension portions 22c, which serve as an example of a drive conductor, a connecting portion 22d connecting the plurality of extension portions 22c, and an intermediate portion 22e serving as the portion between the connecting portion 22d and the terminal portion 22b. The plurality of extension portions 22c and the connecting portion 22d are arranged in a manner close to the fourth resin side surface 14 of the sealing resin 10 in the longitudinal direction Y.

[0106] like Figure 4 as well as Figure 10 As shown in (a), a plurality of extension portions 22c are provided according to the number of second semiconductor elements 30L. The plurality of extension portions 22c are arranged apart in the longitudinal direction Y. The shape of the extension portions 22c in top view is a strip extending in the transverse direction X. Each extension portion 22c has a main surface 22cs, which is an example of a driving connection surface, facing in the thickness direction Z in the same direction as the main surface 31 of the semiconductor element 30, and a back surface 22cr, which faces in the thickness direction Z in the same direction as the back surface 32 of the semiconductor element 30. The front end of each extension portion 22c is supported by a support base 29. In this embodiment, the support base 29 is provided according to the number of extension portions 22c. A plurality of support bases 29 are arranged in the transverse direction X at the ends of the conductive members 42B side of the conductive members 42A. The plurality of support bases 29 are arranged apart in the longitudinal direction Y. Each support base 29, for example, has electrical insulation. The constituent material of each support base 29 is, for example, ceramic. Each support base 29 is bonded to the main surface 42sa of the conductive member 42A. Furthermore, each support 29 engages with the back surface 22cr of the extension 22c. The multiple support 29s are arranged in a state where they are aligned with each other in the transverse direction X and separated from each other in the longitudinal direction Y. The thickness (in the thickness direction Z) of each support 29 is approximately equal to the sum of the thickness (in the thickness direction Z) of the input lead 21 and the thickness (in the thickness direction Z) of the insulating member 28. The front end of the extension 22c is engaged with each support 29. Thus, each support 29 stabilizes the posture of the input lead 22.

[0107] In a top view, the multiple extensions 22c are arranged to align with the multiple second semiconductor elements 30L in the longitudinal direction Y. In other words, when viewed in the transverse direction X, the multiple extensions 22c are arranged to coincide with the multiple second semiconductor elements 30L. Furthermore, the leading edge of the multiple extensions 22c is separated from the second semiconductor elements 30L in the transverse direction X.

[0108] The connecting portion 22d is connected to the end of the first resin side surface 11 of the plurality of extension portions 22c in the transverse direction X. The connecting portion 22d, viewed from above, is rectangular in shape with the longitudinal direction Y as the longer side and the transverse direction X as the shorter side. The middle portion 22e is continuous with the end of the first resin side surface 11 of the connecting portion 22d in the transverse direction X and continuous with the central portion of the connecting portion 22d in the longitudinal direction Y. The middle portion 22e, viewed from above, is rectangular in shape with the transverse direction X as the longer side and the longitudinal direction Y as the shorter side. A plurality of through holes 22f are provided on the middle portion 22e. Each of the through holes 22f penetrates the middle portion 22e in the thickness direction Z. A portion of the sealing resin 10 enters each through hole 22f. Therefore, the sealing resin 10 is difficult to separate from the input lead 22.

[0109] Terminal portion 22b is the part of the input lead 22 that protrudes from the first resin side 11 of the sealing resin 10. Viewed from above, terminal portion 22b has a rectangular shape with the longer side in the horizontal direction (X) and the shorter side in the vertical direction (Y). The dimensions of terminal portion 22b viewed from above are the same as those of terminal portion 21b viewed from above.

[0110] In the thickness direction Z, an insulating member 28, which electrically insulates input leads 21 and 22, is located between input leads 21 and 22. Input leads 21 and 22 are joined to the insulating member 28, for example, by a connector. The connector can be either a conductive or insulating material. The insulating member 28 is made of, for example, insulating paper. Viewed from above, the insulating member 28 is rectangular with the longer side in the horizontal direction X and the shorter side in the vertical direction Y. In the thickness direction Z, the insulating member 28 coincides with the pad portion 21a and the terminal portion 21b of the input lead 21. In the thickness direction Z, the insulating member 28 coincides with the connecting portion 22d, the intermediate portion 22e, and the terminal portion 22b of the input lead 22. Thus, a portion of the insulating member 28 is covered by the sealing resin 10. The size of the insulating member 28 in the vertical direction Y is larger than the size of the terminal portions 21b and 22b of the input leads 21 and 22 in the vertical direction Y. Figure 4 As shown, in top view, the insulating member 28 protrudes from both sides of the terminal portions 21b and 22b in the longitudinal direction Y. Furthermore, the insulating member 28 protrudes beyond the front end of the terminal portions 21b and 22b in the transverse direction X.

[0111] Output lead 23 is a metal plate. The metal plate is made of materials such as Cu or Cu alloy. Output lead 23 is disposed near the second resin side 12 of the sealing resin 10. Alternating current (voltage) converted by multiple semiconductor elements 30 is output from output lead 23.

[0112] The output lead 23 is formed as a flat plate extending in the lateral direction X. The output lead 23 has the same shape as the input lead 21. The output lead 23 has a pad portion 23a and a terminal portion 23b. In this embodiment, the pad portion 23a and the terminal portion 23b are integrally formed as a single component.

[0113] The pad portion 23a is the part of the output lead 23 covered by the sealing resin 10. Multiple comb-like teeth 23c are provided at the end of the sealing resin 10 on the first resin side 11 side of the pad portion 23a. Each comb-like tooth 23c is conductively engaged with the main surface 42sb of the conductive component 42B (described later). This engagement method can be laser welding using a laser, ultrasonic bonding, or bonding using a conductive bonding element. Multiple through holes 23d are provided on the portion of the pad portion 23a adjacent to the second resin side 12 of the sealing resin 10. Each through hole 23d penetrates the pad portion 23a in the thickness direction Z. A portion of the sealing resin 10 enters each through hole 23d. Therefore, the sealing resin 10 is difficult to separate from the output lead 23.

[0114] Terminal portion 23b is the part of the output lead 23 that protrudes from the second resin side 12 of the sealing resin 10. Viewed from above, terminal portion 23b has a rectangular shape with the longer side in the horizontal direction X and the shorter side in the vertical direction Y. Terminal portion 23b extends toward the input lead 21 on the opposite side to terminal portion 23b.

[0115] like Figure 5 As shown, in top view, a pair of control leads 24A and 24B, a pair of detection leads 25A and 25B, and multiple simulated leads 26 are arranged along the horizontal direction X. More specifically, in top view, the control leads 24A, detection leads 25A, and three simulated leads 26 are located beside the conductive component 42A of the support substrate 40 in the vertical direction Y. In top view, the control leads 24B, detection leads 25B, and three simulated leads 26 are located beside the conductive component 42B of the support substrate 40 in the vertical direction Y. The horizontal X-direction spacing of a set of leads consisting of control leads 24A, detection leads 25A, and three simulated leads 26, and the horizontal X-direction spacing of a set of leads consisting of control leads 24B, detection leads 25B, and three simulated leads 26, is larger than the horizontal X-direction spacing of adjacent leads in the control leads 24A, detection leads 25A, and three simulated leads 26 within the same set of leads, as well as the horizontal X-direction spacing of adjacent leads in the control leads 24B, detection leads 25B, and three simulated leads 26 within the same set of leads. Furthermore, in this embodiment, a pair of control leads 24A, 24B, a pair of detection leads 25A, 25B, and multiple simulated leads 26 are formed from the same lead frame.

[0116] In top view, control lead 24A is arranged on the side of the first semiconductor element 30U in the lateral direction X, relative to gate layer 44A and detection layer 45A. Viewed in the longitudinal direction Y, control lead 24A is arranged to coincide with the plurality of first semiconductor elements 30U. A gate voltage for driving the plurality of first semiconductor elements 30U is applied to control lead 24A. Control lead 24B is arranged on the side of the second semiconductor element 30L in the lateral direction X, relative to gate layer 44B and detection layer 45B. Viewed in the longitudinal direction Y, control lead 24B is arranged to coincide with the plurality of second semiconductor elements 30L. A gate voltage for driving the plurality of second semiconductor elements 30L is applied to control lead 24B.

[0117] A pair of control leads 24A and 24B each have a pad portion 24a and a terminal portion 24b. The shapes of the pair of control leads 24A and 24B are identical. In this embodiment, the pair of control leads 24A and 24B are single components formed integrally from the pad portion 24a and the terminal portion 24b.

[0118] The pad portion 24a is the portion of the pair of control leads 24A and 24B covered by the sealing resin 10. Thus, the pair of control leads 24A and 24B are supported by the sealing resin 10. Furthermore, silver plating can be applied to the surface of the pad portion 24a, for example. A through hole 24c is provided in the pad portion 24a. The through hole 24c penetrates the pad portion 24a in the thickness direction Z. A portion of the sealing resin 10 enters the through hole 24c. Therefore, the sealing resin 10 is difficult to separate from the pair of control leads 24A and 24B. The terminal portion 24b is the portion of the pair of control leads 24A and 24B that protrudes from the sealing resin 10. Viewed from the transverse direction X, the terminal portion 24b is L-shaped (see reference). Figure 1 as well as Figure 2 ).

[0119] The control lead 24A and the gate layer 44A are connected by a first connecting wire 53. Specifically, the end of the first connecting wire 53 connected to the gate layer 44A is connected in the longitudinal direction Y to the end of the gate layer 44A on the side of the control lead 24A. The end of the first connecting wire 53 connected to the control lead 24A is connected to the pad portion 24a of the control lead 24A.

[0120] The control lead 24B and the gate layer 44B are connected by a second connecting wire 57. Specifically, the end of the second connecting wire 57 connected to the gate layer 44B side is connected in the longitudinal direction Y to the end of the control lead 24B side of the gate layer 44B. The end of the second connecting wire 57 connected to the control lead 24B is connected to the pad portion 24a of the control lead 24B.

[0121] Detection lead 25A is located next to control lead 24A in the transverse direction X. In top view, detection lead 25A is configured such that it is positioned closer to the first semiconductor element 30U in the transverse direction X than detection layer 45A, and partially overlaps with the insulating layer 43A side of the first semiconductor element 30U in the transverse direction X when viewed in the longitudinal direction Y. Detection lead 25A detects the voltage (voltage corresponding to the source current) applied to the source electrodes 33 of the plurality of first semiconductor elements 30U. Detection lead 25B is located next to control lead 24B in the transverse direction X. Detection lead 25B is configured such that it is positioned closer to the second semiconductor element 30L in the transverse direction X than detection layer 45B, and partially overlaps with the insulating layer 43B side of the second semiconductor element 30L in the transverse direction X when viewed in the longitudinal direction Y. Detection lead 25B detects the voltage (voltage corresponding to the source current) applied to the source electrodes 33 of the plurality of second semiconductor elements 30L.

[0122] Each pair of detection leads 25A and 25B has a pad portion 25a and a terminal portion 25b. The pair of detection leads 25A and 25B have the same shape as each other and the same shape as the pair of control leads 24A and 24B. In this embodiment, the pad portion 25a and the terminal portion 25b are integrally formed as a single component.

[0123] The pad portion 25a is the portion of the pair of detection leads 25A and 25B covered by the sealing resin 10. Thus, the pair of detection leads 25A and 25B are supported by the sealing resin 10. Furthermore, silver plating can be applied to the surface of the pad portion 25a. A through hole 25c is provided in the pad portion 25a. The through hole 25c penetrates the pad portion 25a in the thickness direction Z. A portion of the sealing resin 10 enters the through hole 25c. Therefore, the sealing resin 10 is difficult to separate from the pair of detection leads 25A and 25B. The terminal portion 25b is the portion of the pair of detection leads 25A and 25B that protrudes from the sealing resin 10. The terminal portion 25b is the same as the terminal portion 24b, and is L-shaped when viewed in the transverse direction X (see reference). Figure 1 as well as Figure 2 ).

[0124] The detection lead 25A and the detection layer 45A are connected by a first connecting wire 54. Specifically, the end of the first connecting wire 54 connected to the detection layer 45A is connected in the longitudinal direction Y to the end of the detection lead 25A in the detection layer 45A. The end of the first connecting wire 54 connected to the detection lead 25A is connected to the pad portion 25a of the detection lead 25A.

[0125] The detection lead 25B is connected to the detection layer 45B via a second connecting wire 58. Specifically, the end of the second connecting wire 58 connected to the detection layer 45B is connected in the longitudinal direction Y to the end of the detection lead 25B in the detection layer 45B. The end of the second connecting wire 58 connected to the detection lead 25B is also connected to the pad portion 25a of the detection lead 25B.

[0126] like Figure 5 As shown, three simulated leads 26 are located in the transverse direction X next to the control lead 24A on the side opposite to the detection lead 25A. The three simulated leads 26 are arranged apart from each other in the transverse direction X. Two of the three simulated leads 26 on the control lead 24A side are arranged to coincide with the insulating layer 43A when viewed from the longitudinal direction Y. The remaining simulated lead 26 is located in the transverse direction X on the first resin side 11 closer to the sealing resin 10 than the insulating layer 43A (see reference). Figure 4 Configure it in the way of ).

[0127] The other three simulated leads 26 are located in the transverse direction X next to the control lead 24B on the opposite side of the detection lead 25B. These other three simulated leads 26 are arranged apart from each other in the transverse direction X. Two of these other three simulated leads 26 on the control lead 24B side are arranged to coincide with the insulating layer 43B when viewed from the longitudinal direction Y. The remaining simulated lead 26 is located in the transverse direction X on the second resin side 12, closer to the sealing resin 10 than the insulating layer 43B (see reference). Figure 4 Configure it in the way of ).

[0128] Each of the multiple simulated leads 26 has a pad portion 26a and a terminal portion 26b. The multiple simulated leads 26 have the same shape as each other and the same shape as a pair of control leads 24A and 24B. In this embodiment, the pad portion 26a and the terminal portion 26b are integrally formed as a single component.

[0129] The pad portion 26a is the portion of the plurality of simulated leads 26 covered by the sealing resin 10. Thus, the plurality of simulated leads 26 are supported by the sealing resin 10. Furthermore, a process such as silver plating can be applied to the surface of the pad portion 26a. Through holes 26c are provided in the pad portion 26a. Each through hole 26c penetrates the pad portion 26a in the thickness direction Z. A portion of the sealing resin 10 enters each through hole 26c. Therefore, the sealing resin 10 is difficult to separate from the plurality of simulated leads 26. The terminal portion 26b is the portion of the plurality of simulated leads 26 that protrudes from the sealing resin 10. The terminal portion 26b is the same as the terminal portion 24b, and is L-shaped when viewed in the transverse direction X (see reference). Figure 1 as well as Figure 2In this embodiment, the six simulated leads 26 are not connected via connecting components such as wires, conductive components 42A and 42B, gate layers 44A and 44B, or detection layers 45A and 45B. Furthermore, at least one of the six simulated leads 26 can be omitted.

[0130] Next, the connection structure between the first semiconductor element 30U and the input lead 22, and the connection structure between the second semiconductor element 30L and the conductive component 42B will be explained.

[0131] like Figure 4 As shown, the semiconductor device 1A includes multiple first driving leads 60 connecting multiple second semiconductor elements 30L and input leads 22, and multiple driving leads 70 connecting multiple first semiconductor elements 30U and conductive components 42B. The multiple first driving leads 60 and multiple second driving leads 70 are examples of multiple driving connection components. Furthermore, the first driving leads 60 are examples of second driving connection components connected to the driving electrodes of the second semiconductor elements, and the second driving leads 70 are examples of first driving connection components connected to the driving electrodes of the first semiconductor elements. The multiple first driving leads 60 and multiple second driving leads 70 are each sealed with sealing resin 10. The number of first driving leads 60 is determined by the number of second semiconductor elements 30L. In this embodiment, since there are four second semiconductor elements 30L, the semiconductor device 1A includes four first driving leads 60. The number of second driving leads 70 is determined by the number of first semiconductor elements 30U. In this embodiment, since there are four first semiconductor elements 30U, the semiconductor device 1A has four second driving leads 70.

[0132] like Figure 5 As shown, the first driving lead 60 is connected to the source electrode 33 of the second semiconductor element 30L and the extension 22c of the input lead 22. That is, the first driving lead 60 connects the source electrode 33 and the input lead 22 of the second semiconductor element 30L. The shape of the first driving lead 60, viewed from above, is a strip extending in the transverse direction X. The first driving lead 60 has a structure in which multiple thin metal plates are stacked in the thickness direction Z. In this embodiment, as... Figure 5 , Figure 12 as well as Figure 13As shown, the first driving lead 60 is a structure in which three thin metal plates, namely metal plates 60A, 60B, and 60C, are stacked sequentially in the thickness direction Z. Metal plates 60A, 60B, and 60C are made of the same metal material. An example of the material constituting metal plates 60A, 60B, and 60C is Cu (copper). Furthermore, the number of metal plates constituting the first driving lead 60 can be arbitrarily changed. In one example, the number of metal plates constituting the first driving lead 60 is set according to the allowable current of the second semiconductor element 30L. The thickness (dimension in the thickness direction Z) of metal plates 60A, 60B, and 60C are 0.05 mm to 0.2 mm, respectively. In this embodiment, metal plates 60A, 60B, and 60C with a thickness of 0.05 mm are used.

[0133] like Figure 5 As shown, the first driving lead 60 has a first connecting portion 61 that is connected to the source electrode 33 of the second semiconductor element 30L, a second connecting portion 62 that is connected to the main surface 22cs of the extension portion 22c of the input lead 22, and a connecting portion 63 that connects the first connecting portion 61 and the second connecting portion 62. Furthermore, since the first driving lead 60 is constructed using metal plates 60A to 60C, each of the metal plates 60A to 60C has a first connecting portion 61, a second connecting portion 62, and a connecting portion 63. Therefore, the first connecting portion 61, the second connecting portion 62, and the connecting portion 63 of each of the metal plates 60A to 60C are distinguished by the letter sequence A to C after the symbol. In this embodiment, as... Figure 12 as well as Figure 13 As shown, metal plate 60A is a single component integrally formed with first connecting portion 61A, second connecting portion 62A, and connecting portion 63A. Metal plate 60B is a single component integrally formed with first connecting portion 61B, second connecting portion 62B, and connecting portion 63B. Metal plate 60C is a single component integrally formed with first connecting portion 61C, second connecting portion 62C, and connecting portion 63C. Connecting portion 63A is an example of a first connecting portion, connecting portion 63B is an example of a second connecting portion, and connecting portion 63C is an example of a third connecting portion. The first connecting portion 61 is constructed by sequentially stacking first connecting portion 61A, first connecting portion 61B, and first connecting portion 61C in the thickness direction. The second connecting portion 62 is constructed by sequentially stacking first connecting portion 62A, first connecting portion 62B, and second connecting portion 62C in the thickness direction.

[0134] like Figure 14 as well as Figure 15As shown, the first connecting portion 61A of the metal plate 60A is bonded to the source electrode 33 of the second semiconductor element 30L. Therefore, the metal plate 60A is an example of a first metal plate connected to the semiconductor element, and the first connecting portion 61A is an example of a first element-side connecting portion of the first metal plate. The first connecting portion 61A contacts the source electrode 33 on its front surface. The shape of the first connecting portion 61A in top view is a rectangle with the long side in the horizontal direction X and the short side in the vertical direction Y. The first connecting portion 61A is bonded to a large portion of the source electrode 33. In one example, the first connecting portion 61A is bonded to an area of ​​more than 50% and less than 100% of the area of ​​the source electrode 33 in top view. Preferably, the first connecting portion 61A is bonded to an area of ​​more than 60% and less than 100% of the area of ​​the source electrode 33 in top view. In this embodiment, the first connecting portion 61A contacts an area of ​​more than 60% and less than 70% of the area of ​​the source electrode 33 in top view.

[0135] Furthermore, the size of the area where the first connecting portion 61A is joined to the source electrode 33 can be arbitrarily changed. In one example, the first connecting portion 61A joins an area of ​​more than 70% and less than 100% of the area of ​​the source electrode 33 in a top view. In another example, the first connecting portion 61A joins an area of ​​more than 80% and less than 100% of the area of ​​the source electrode 33 in a top view.

[0136] like Figure 14 as well as Figure 15As shown, the first connecting portion 61B of the metal plate 60B is stacked on top of the first connecting portion 61A in the thickness direction Z. Therefore, the metal plate 60B is an example of a second metal plate connected to the first metal plate, and the first connecting portion 61B is an example of a second element-side connecting portion of the second metal plate. The first connecting portion 60B contacts the first connecting portion 61A on its generally flat surface. The shape of the first connecting portion 61B in top view is a rectangle with the long side in the transverse direction X and the short side in the longitudinal direction Y. The leading edge of the first connecting portion 61B is offset from the leading edge of the first connecting portion 61A in the transverse direction X. Specifically, the leading edge of the first connecting portion 61B is located on the side closer to the extension 22c of the input lead 22 in the transverse direction X than the leading edge of the first connecting portion 61A. Therefore, in top view, the size of the first connecting portion 61B in the transverse direction X is smaller than the size of the first connecting portion 61A in the transverse direction X. Furthermore, in top view, the width (width dimension) of the longitudinal direction Y of the first connecting portion 61B is equal to the width (width dimension) of the longitudinal direction Y of the first connecting portion 61A. The thickness (width in the thickness direction Z) of the first connecting portion 61B is equal to the thickness (width in the thickness direction Z) of the first connecting portion 61A. Here, as long as the difference between the width (width) of the longitudinal direction Y of the first connecting portion 61B and the width (width) of the first connecting portion 61A is within 5% of the width (width) of the first connecting portion 61A, it can be said that the width (width) of the longitudinal direction Y of the first connecting portion 61B is equal to the thickness of the first connecting portion 61A. Moreover, in the transverse direction X, the leading edge of the first connecting portion 61B can be aligned with the leading edge of the first connecting portion 61A.

[0137] The first connecting portion 61C of the metal plate 60C is stacked on top of the first connecting portion 61B in the thickness direction Z. Therefore, the metal plate 60C is an example of a third metal plate stacked on a second metal plate, and the first connecting portion 61C is an example of a third element-side connecting portion of the third metal plate. The first connecting portion 61C contacts the first connecting portion 61B on its generally flat surface. In plan view, the first connecting portion 61C has a rectangular shape with the long side in the transverse direction X and the short side in the longitudinal direction Y. The leading edge of the first connecting portion 61C is offset from the leading edge of the first connecting portion 61B in the transverse direction X. Specifically, the leading edge of the first connecting portion 61C is located in the transverse direction X on the side closer to the extension 22c of the input lead 22 than the leading edge of the first connecting portion 61B. Therefore, in plan view, the size of the transverse direction X of the first connecting portion 61C is smaller than the size of the transverse direction X of the first connecting portion 61B. In this embodiment, the offset of the front edge of the first connecting portion 61C relative to the front edge of the first connecting portion 61B is greater than the offset of the front edge of the first connecting portion 61B relative to the front edge of the first connecting portion 61A. Furthermore, in top view, the magnitude (width) of the longitudinal direction Y of the first connecting portion 61B is equal to the magnitude (width) of the longitudinal direction Y of the first connecting portion 61B. The thickness (magnitude of the thickness direction Z) of the first connecting portion 61C is equal to the thickness (magnitude of the thickness direction Z) of the first connecting portion 61B. Here, if the difference between the magnitude of the longitudinal direction Y of the first connecting portion 61C and the magnitude of the longitudinal direction Y of the first connecting portion 61B is, for example, within 5% of the magnitude of the longitudinal direction Y of the first connecting portion 61B, then the magnitude of the longitudinal direction Y of the first connecting portion 61C can be said to be equal to the magnitude of the longitudinal direction Y of the first connecting portion 61B. Furthermore, if the difference between the thickness of the first connecting portion 61C and the thickness of the first connecting portion 61B is, for example, within 5% of the thickness of the first connecting portion 61B, then the thickness of the first connecting portion 61C can be said to be equal to the thickness of the first connecting portion 61B. Moreover, in the transverse direction X, the leading edge of the first connecting portion 61C can be aligned with the leading edge of the first connecting portion 61B.

[0138] The first connecting portion 61A is joined to the source electrode 33 by laser welding, which is an example of laser processing using a laser. The first connecting portion 61B is joined to the first connecting portion 61A by laser welding. The first connecting portion 61C is joined to the first connecting portion 61B by laser welding.

[0139] More specifically, three laser bonding portions 64A, 64B, and 64C are formed on the first connecting portion 61A. The laser bonding portions 64A, 64B, and 64C are bonded to the source electrode 33 of the second semiconductor element 30L. Therefore, the laser bonding portions 64A, 64B, and 64C are examples of first element-side bonding portions of the first element-side connecting portion. The laser bonding portions 64A, 64B, and 64C are formed in the portion of the first connecting portion 61A that is separated in the lateral direction X. In top view, the laser bonding portions 64A, 64B, and 64C extend along the longitudinal direction Y. In this embodiment, the magnitudes of the longitudinal direction Y of the laser bonding portions 64A, 64B, and 64C are equal. Here, as long as the maximum deviation of the longitudinal direction Y of laser joint 64A, the longitudinal direction Y of laser joint 64B, and the longitudinal direction Y of laser joint 64C is, for example, within 5% of the longitudinal direction Y of laser joint 64A, it can be said that the longitudinal direction Y of laser joints 64A, 64B, and 64C are equal to each other.

[0140] Laser-bonded portion 64A is formed in a portion of the first connecting portion 61A closer to its front end than laser-bonded portions 64B and 64C. In one example, laser-bonded portion 64A, viewed from the thickness direction Z, is formed in the portion of the first connecting portion 61A that coincides with the front end of the first connecting portion 61B. More specifically, laser-bonded portion 64A is formed in the portion of the first connecting portion 61A adjacent to the front edge of the first connecting portion 61B in the transverse direction X. Laser-bonded portion 64B is formed in the portion of the first connecting portion 61A closer to its base end than laser-bonded portion 64A and closer to its front end than laser-bonded portion 64C. Laser-bonded portion 64C is formed in the central portion of the first connecting portion 61A in the transverse direction X. Figure 15 As shown, in this embodiment, the distance PA1 between laser junctions 64A and 64B, and the distance PA2 between laser junctions 64B and 64C, are equal. Here, if the difference between distance PA1 and distance PA2 is within 5% of distance PA1, then distances PA1 and PA2 can be considered equal. Furthermore, distances PA1 and PA2 can be arbitrarily changed. In one example, distance PA2 can be larger than distance PA1.

[0141] like Figure 14 as well as Figure 15As shown, two laser bonding portions 64D and 64E are formed on the first connecting portion 61B. Laser bonding portions 64D and 64E are bonded to the first connecting portion 61A. Therefore, laser bonding portions 64D and 64E are examples of second element-side bonding portions of the second element-side connecting portion. Laser bonding portions 64D and 64E are formed in the portion of the first connecting portion 61B that is separated in the lateral direction X. In top view, laser bonding portions 64D and 64E extend along the longitudinal direction Y. In this embodiment, the magnitudes of the longitudinal direction Y of laser bonding portions 64D and 64E are equal. Furthermore, the magnitudes of the longitudinal direction Y of laser bonding portions 64D and 64E are equal to the magnitudes of the longitudinal direction Y of laser bonding portions 64A, 64B, and 64C.

[0142] Here, if the difference between the magnitude of the longitudinal direction Y of laser joint 64D and the magnitude of the longitudinal direction Y of laser joint 64E is within 5% of the magnitude of the longitudinal direction Y of laser joint 64D, then the magnitudes of the longitudinal direction Y of laser joints 64D and 64E can be said to be equal. Furthermore, if the maximum deviation between the magnitudes of the longitudinal direction Y of laser joint 64D, laser joint 64A, laser joint 64B, and laser joint 64C is, for example, within 5% of the magnitude of the longitudinal direction Y of laser joint 64A, then it can be said that the magnitude of the longitudinal direction Y of laser joint 64D is equal to the magnitudes of the longitudinal direction Y of laser joints 64A, 64B, and 64C. If the maximum deviation of the longitudinal direction Y of laser joint 64E, laser joint 64A, laser joint 64B, and laser joint 64C is, for example, within 5% of the longitudinal direction Y of laser joint 64A, then it can be said that the longitudinal direction Y of laser joint 64E is equal to the longitudinal direction Y of laser joints 64A, 64B, and 64C.

[0143] Laser-bonded portion 64D is formed in a portion of the first connecting portion 61B closer to its front end than laser-bonded portion 64E. In one example, when viewed from the thickness direction Z, laser-bonded portion 64D is formed in the portion of the first connecting portion 61B that overlaps with the front end of the first connecting portion 61C. More specifically, laser-bonded portion 64D is formed in the portion of the first connecting portion 61B adjacent to the front edge of the first connecting portion 61C in the transverse direction X. Furthermore, when viewed from the thickness direction Z, laser-bonded portion 64D is located between laser-bonded portions 64A and 64B in the transverse direction X. Laser-bonded portion 64E is formed in the portion of the first connecting portion 61B closer to its front end than the central portion in the transverse direction X of the first connecting portion 61B. When viewed from the thickness direction Z, laser-bonded portion 64E is located between laser-bonded portions 64B and 64C in the transverse direction X. Thus, when viewed from the thickness direction Z, the laser-bonded portions 64D and 64E are offset from the laser-bonded portions 64A, 64B, and 64C in a manner that does not coincide with them. Furthermore, as... Figure 15 As shown, in this embodiment, the distance PB between the laser-bonded portions 64D and 64E is equal to the distances PA1 and PA2. Here, if the difference between the distance PB and the distance PA1 or PA2 is, for example, within 5% of the distance PA1, it can be said that the distance PB is equal to the distances PA1 and PA2. Furthermore, the distance PB can be arbitrarily changed. In one example, the distance PB can be larger than the distances PA1 and PA2.

[0144] like Figure 14 as well as Figure 15 As shown, a laser bonding portion 64F is formed on the first connecting portion 61C. The laser bonding portion 64F bonds to the first connecting portion 61B. Therefore, the laser bonding portion 64F is an example of a third element-side bonding portion. The laser bonding portion 64F extends along the longitudinal direction Y. In this embodiment, the magnitude of the longitudinal direction Y of the laser bonding portion 64F is equal to the magnitude of the longitudinal direction Y of the laser bonding portions 64A, 64B, and 64C. Here, if the maximum deviation of the magnitude of the longitudinal direction Y of the laser bonding portion 64F, the magnitude of the longitudinal direction Y of the laser bonding portion 64A, the magnitude of the longitudinal direction Y of the laser bonding portion 64B, and the magnitude of the longitudinal direction Y of the laser bonding portion 64C is, for example, within 5% of the magnitude of the longitudinal direction Y of the laser bonding portion 64A, then it can be said that the magnitude of the longitudinal direction Y of the laser bonding portion 64F is equal to the magnitude of the longitudinal direction Y of the laser bonding portions 64A, 64B, and 64C.

[0145] The laser-bonded portion 64F is formed in the portion of the first connecting portion 61C that is closer to the front end than the central portion in the transverse direction X of the first connecting portion 60C. The laser-bonded portion 64F is located between the laser-bonded portions 64D and 64E in the transverse direction X. Thus, when viewed from the thickness direction Z, the laser-bonded portion 64F is offset from the laser-bonded portions 64D and 64E. Furthermore, when viewed from the thickness direction Z, the laser-bonded portion 64F is positioned to coincide with the laser-bonded portion 64B.

[0146] Thus, in the first connection portion 61 of the first drive lead 60, the laser bonding portions formed on adjacent metal plates in the stacking direction of the metal plates are arranged in a way that they do not overlap in the thickness direction. On the other hand, in the first connection portion 61 of the first drive lead 60, the laser bonding portions formed on metal plates separated in the stacking direction of the metal plates are arranged in a way that they overlap in the thickness direction.

[0147] In this embodiment, such as Figure 15 As shown, in a top view, three laser-jointed portions 64A, 64B, 64C, two laser-jointed portions 64D, 64E, and one laser-jointed portion 64F are formed at equal intervals in the transverse direction X.

[0148] In addition, such as Figure 15 As shown in the enlarged view, a recess 64x is formed at the end of the laser-bonded portion 64B on the metal plate 60B side in the thickness direction Z. In a cross-sectional view cut along a plane in the transverse direction X and the thickness direction Z, the recess 64x is curved. Through this recess 64x, the laser-bonded portion 64B does not contact the metal plate 60B. Furthermore, the other laser-bonded portions 64A and 64C of the metal plate 60A, and the laser-bonded portions 64E and 64F of the metal plate 60B, also have recesses 64x, similar to those in the laser-bonded portion 64B. Therefore, the other laser-bonded portions 64A and 64C of the metal plate 60A do not contact the metal plate 60B. Additionally, the laser-bonded portions 64E and 64F do not contact the metal plate 60C.

[0149] like Figure 16As shown, the second connecting portion 62A of the metal plate 60A is joined to the main surface 22cs of the extension portion 22c of the input lead 22. Therefore, the second connecting portion 62A is an example of the first conductor-side connecting portion of the first metal plate. The second connecting portion 62A contacts the main surface 22cs of the extension portion 22c on its entire surface. In top view, the shape of the second connecting portion 62A is a rectangle with the long side in the horizontal direction X and the short side in the vertical direction Y. In this embodiment, the size (width) of the vertical direction Y of the second connecting portion 62A is slightly smaller than the size (width) of the vertical direction Y of the extension portion 22c. Furthermore, the size of the vertical direction Y of the second connecting portion 62A can be equal to the size of the vertical direction Y of the extension portion 22c. In this embodiment, the size of the horizontal direction X of the second connecting portion 62A is equal to the size of the horizontal direction X of the first connecting portion 61A, and the size of the vertical direction Y of the second connecting portion 62A is equal to the size of the vertical direction Y of the first connecting portion 61A. Here, if the difference between the lateral X-direction of the second connecting portion 62A and the lateral X-direction of the first connecting portion 61A is, for example, within 5% of the lateral X-direction of the first connecting portion 61A, then it can be said that the lateral X-direction of the second connecting portion 62A is equal to the lateral X-direction of the first connecting portion 61A. Similarly, if the difference between the longitudinal Y-direction of the second connecting portion 62A and the longitudinal Y-direction of the first connecting portion 61A is, for example, 5% of the longitudinal Y-direction of the first connecting portion 61A, then it can be said that the longitudinal Y-direction of the second connecting portion 62A is equal to the longitudinal Y-direction of the first connecting portion 61A.

[0150] like Figure 16 as well as Figure 17As shown, the second connecting portion 62B of the metal plate 60B is stacked on top of the second connecting portion 62A in the thickness direction Z. The second connecting portion 62B contacts the second connecting portion 62A on its almost entire surface. Therefore, the second connecting portion 62B is an example of a second conductor-side connecting portion of the second metal plate. The shape of the second connecting portion 62B in top view is a rectangle with the long side in the transverse direction X and the short side in the longitudinal direction Y. The leading edge of the second connecting portion 62B is offset from the leading edge of the second connecting portion 62A in the transverse direction X. Specifically, the leading edge of the second connecting portion 62B is located closer to the second semiconductor element 30L in the transverse direction X than the leading edge of the second connecting portion 62A. Therefore, in top view, the size of the transverse direction X of the second connecting portion 62B is smaller than the size of the transverse direction X of the second connecting portion 62A. Furthermore, in top view, the size (width) of the longitudinal direction Y of the second connecting portion 62B is equal to the size (width) of the longitudinal direction Y of the second connecting portion 62A. The thickness (size of the thickness direction Z) of the second connecting portion 62B is equal to the thickness (size of the thickness direction Z) of the second connecting portion 62A. Here, if the difference between the size of the longitudinal direction Y of the second connecting portion 62B and the size of the longitudinal direction Y of the second connecting portion 62A is, for example, within 5% of the size of the longitudinal direction Y of the second connecting portion 62A, it can be said that the size of the longitudinal direction Y of the second connecting portion 62B is equal to the size of the longitudinal direction Y of the second connecting portion 62A. Furthermore, if the difference between the thickness of the second connecting portion 62B and the thickness of the second connecting portion 62A is, for example, within 5% of the thickness of the second connecting portion 62A, it can be said that the thickness of the second connecting portion 62B is equal to the thickness of the second connecting portion 62A. In this embodiment, the size of the transverse direction X of the second connecting portion 62B is equal to the size of the transverse direction X of the first connecting portion 61B, and the size of the longitudinal direction Y of the second connecting portion 62B is equal to the size of the longitudinal direction Y of the first connecting portion 61B. Here, if the difference between the lateral X-direction of the second connecting portion 62B and the lateral X-direction of the first connecting portion 61B is, for example, within 5% of the lateral X-direction of the first connecting portion 61B, then it can be said that the lateral X-direction of the second connecting portion 62B is equal to the lateral X-direction of the first connecting portion 61B. Furthermore, if the difference between the longitudinal Y-direction of the second connecting portion 62B and the longitudinal Y-direction of the first connecting portion 61B is, for example, within 5% of the longitudinal Y-direction of the first connecting portion 61B, then it can be said that the longitudinal Y-direction of the second connecting portion 62B is equal to the longitudinal Y-direction of the first connecting portion 61B. Moreover, in the lateral X-direction, the leading edge of the second connecting portion 62B can be aligned with the leading edge of the second connecting portion 62A.

[0151] The second connecting portion 62C of the metal plate 60C is stacked on top of the second connecting portion 62B in the thickness direction Z. The second connecting portion 62C contacts the second connecting portion 62B on its almost entire surface. Therefore, the second connecting portion 62C is an example of a third conductor-side connecting portion of the third metal plate. The shape of the second connecting portion 62C in top view is a rectangle with the long side in the transverse direction X and the short side in the longitudinal direction Y. The leading edge of the second connecting portion 62C is offset from the leading edge of the second connecting portion 62B in the transverse direction X. Specifically, the leading edge of the second connecting portion 62C is located closer to the second semiconductor element 30L in the transverse direction X than the leading edge of the second connecting portion 62B. Therefore, in top view, the size of the transverse direction X of the second connecting portion 62C is smaller than the size of the transverse direction X of the second connecting portion 62B. In this embodiment, the offset of the leading edge of the first connecting portion 61C relative to the leading edge of the first connecting portion 61B is larger than the offset of the leading edge of the first connecting portion 61B relative to the leading edge of the first connecting portion 61A. Furthermore, in a top view, the width dimension (Y-axis dimension) of the second connecting portion 62B in the longitudinal direction is equal to the width dimension (Y-axis dimension) of the second connecting portion 62B. The thickness (Z-axis dimension) of the second connecting portion 62C is equal to the thickness (Z-axis dimension) of the second connecting portion 62B. Here, if the difference between the width dimension (Y-axis dimension) of the second connecting portion 62C and the width dimension (Y-axis dimension) of the second connecting portion 62B is, for example, within 5% of the width dimension (Y-axis dimension) of the second connecting portion 62B, it can be said that the width dimension (Y-axis dimension) of the second connecting portion 62C is equal to the width dimension (Y-axis dimension) of the second connecting portion 62B. Similarly, if the difference between the thickness of the second connecting portion 62C and the thickness of the second connecting portion 62B is, for example, within 5% of the thickness of the second connecting portion 62B, it can be said that the thickness of the second connecting portion 62C is equal to the thickness of the second connecting portion 62B. In this embodiment, the lateral X dimension of the second connecting portion 62C is equal to the lateral X dimension of the first connecting portion 61C, and the longitudinal Y dimension of the second connecting portion 62C is equal to the longitudinal Y dimension of the first connecting portion 61C. Here, if the difference between the lateral X dimension of the second connecting portion 62C and the lateral X dimension of the first connecting portion 61C is, for example, within 5% of the lateral X dimension of the first connecting portion 61C, it can be said that the lateral X dimension of the second connecting portion 61C is equal to the lateral X dimension of the first connecting portion 61C. Furthermore, if the difference between the longitudinal Y dimension of the second connecting portion 62C and the longitudinal Y dimension of the first connecting portion 61C is, for example, within 5% of the longitudinal Y dimension of the first connecting portion 61C, it can be said that the longitudinal Y dimension of the second connecting portion 62C is equal to the longitudinal Y dimension of the first connecting portion 61C. Moreover, in the lateral X direction, the leading edge of the second connecting portion 62C can be aligned with the leading edge of the second connecting portion 62B.

[0152] The second connecting portion 62A is laser-welded to the front end of the extension portion 22c of the input lead 22. The second connecting portion 62B is laser-welded to the second connecting portion 62A. The second connecting portion 62C is laser-welded to the second connecting portion 62B.

[0153] To be more specific, such as Figure 16 as well as Figure 17 As shown, three laser bonding portions 65A, 65B, and 65C are formed on the second connecting portion 62A. Laser bonding portions 65A, 65B, and 65C are bonded to the main surface 22cs of the extension portion 22c. Therefore, laser bonding portions 65A, 65B, and 65C are examples of bonding portions on the first conductor side. Laser bonding portions 65A, 65B, and 65C are formed in the laterally dispersing portion of the second connecting portion 62A. In top view, laser bonding portions 65A, 65B, and 65C extend along the longitudinal direction Y. In this embodiment, the magnitudes of the longitudinal direction Y of laser bonding portions 65A, 65B, and 65C are equal. Here, if the maximum deviation of the magnitude of the longitudinal direction Y of laser joint 65A, the magnitude of the longitudinal direction Y of laser joint 65B, and the magnitude of the longitudinal direction Y of laser joint 65C is, for example, within 5% of the magnitude of the longitudinal direction Y of laser joint 65A, it can be said that the magnitudes of the longitudinal direction Y of laser joints 65A, 65B, and 65C are equal. Furthermore, in this embodiment, the magnitudes of the longitudinal direction Y of laser joints 65A, 65B, and 65C are equal to the magnitudes of the longitudinal direction Y of laser joints 64A, 64B, and 64C, respectively. Here, if the difference between the magnitude of the longitudinal direction Y of laser joint 65A and the magnitude of the longitudinal direction Y of laser joint 64A is, for example, within 5% of the magnitude of the longitudinal direction Y of laser joint 64A, it can be said that the magnitude of the longitudinal direction Y of laser joint 65A is equal to the magnitude of the longitudinal direction Y of laser joint 64A. The relationship between the longitudinal direction Y of laser joint 65B and laser joint 64B, and the relationship between the longitudinal direction Y of laser joint 65C and laser joint 64C, are the same as the relationship between the longitudinal direction Y of laser joint 65A and laser joint 64A mentioned above.

[0154] Laser bonding portion 65A is formed in a portion of the second connecting portion 62A closer to the front end than laser bonding portions 65B and 65C. In one example, when viewed from the thickness direction Z, laser bonding portion 65A is formed in a portion of the second connecting portion 62A that overlaps with the front end of the second connecting portion 62B. More specifically, laser bonding portion 65A is formed in a portion of the second connecting portion 62A adjacent to the front edge of the second connecting portion 62B in the transverse direction X. Laser bonding portion 65B is formed in the second connecting portion 62A in a portion closer to the base end than laser bonding portion 65A and closer to the front end than laser bonding portion 65C. Laser bonding portion 65C is formed in the central portion of the second connecting portion 62A in the transverse direction X. In this embodiment, as... Figure 17 As shown, the distance PC1 between laser junctions 65A and 65B, and the distance PC2 between laser junctions 65B and 65C, are equal. Here, if the difference between distance PC1 and distance PC2 is, for example, within 5% of distance PC1, then distance PC1 and distance PC2 can be said to be equal. In this embodiment, distance PC1 and PA1 between laser junctions 64A and 64B (refer to...) Figure 15 The spacing PC2 is equal to the spacing PA2 between the laser-bonded portion 64B and the laser-bonded portion 64C (refer to...). Figure 15 If the difference between spacing PC1 and spacing PA1 is, for example, within 5% of spacing PA1, then spacing PC1 and spacing PA1 can be said to be equal. Similarly, if the difference between spacing PC2 and spacing PA2 is, for example, within 5% of spacing PA2, then spacing PC2 and spacing PA2 can be said to be equal.

[0155] like Figure 16 as well as Figure 17 As shown, two laser bonding portions 65D and 65E are formed on the second connecting portion 62B. Laser bonding portions 65D and 65E are bonded to the second connecting portion 62A. Therefore, laser bonding portions 65D and 65E are examples of bonding portions on the second conductor side. Laser bonding portions 65D and 65E are formed in the portion of the second bonding portion 62B that is separated in the lateral direction X. In top view, laser bonding portions 65D and 65E extend along the longitudinal direction Y. In this embodiment, the magnitudes of the longitudinal direction Y of laser bonding portions 65D and 65E are equal. Furthermore, the magnitudes of the longitudinal direction Y of laser bonding portions 65D and 65E are equal to the magnitudes of the longitudinal direction Y of laser bonding portions 65A, 65B, and 65C.

[0156] Here, if the difference between the magnitude of the longitudinal direction Y of laser joint 65D and the magnitude of the longitudinal direction Y of laser joint 65E is, for example, within 5% of the magnitude of the longitudinal direction Y of laser joint 65D, then it can be said that the magnitudes of the longitudinal direction Y of laser joints 65D and 65E are equal. Furthermore, if the maximum deviation between the magnitudes of the longitudinal direction Y of laser joint 65D, laser joint 65A, laser joint 65B, and laser joint 65C is, for example, within 5% of the magnitude of the longitudinal direction Y of laser joint 65A, then it can be said that the magnitude of the longitudinal direction Y of laser joint 65D is equal to the magnitudes of the longitudinal direction Y of laser joints 65A, 65B, and 65C. Furthermore, if the maximum deviation of the longitudinal direction Y of laser joint 65E, the longitudinal direction Y of laser joint 65A, the longitudinal direction Y of laser joint 65B, and the longitudinal direction Y of laser joint 65C is, for example, within 5% of the longitudinal direction Y of laser joint 65A, then it can be said that the longitudinal direction Y of laser joint 65E is equal to the longitudinal direction Y of laser joints 65A, 65B, and 65C.

[0157] Furthermore, in this embodiment, the size of the longitudinal direction Y of the laser bonding portion 65D is the same as that of the laser bonding portion 64D of the first connecting portion 61B (also referencing...). Figure 14 The magnitude of the longitudinal direction Y of the laser-bonded portion 64E is equal to that of the laser-bonded portion 64E of the first connecting portion 61B (also refer to...). Figure 14 The magnitudes of the longitudinal direction Y of the laser joint 65D and the laser joint 64D are equal. Here, if the difference between the magnitude of the longitudinal direction Y of the laser joint 64D and the laser joint 64D is, for example, within 5% of the magnitude of the longitudinal direction Y of the laser joint 64D, then it can be said that the magnitude of the longitudinal direction Y of the laser joint 65D is equal to the magnitude of the longitudinal direction Y of the laser joint 64D. Similarly, if the difference between the magnitude of the longitudinal direction Y of the laser joint 65E and the laser joint 64E is, for example, within 5% of the magnitude of the longitudinal direction Y of the laser joint 64E, then it can be said that the magnitude of the longitudinal direction Y of the laser joint 65E is equal to the magnitude of the longitudinal direction Y of the laser joint 64E.

[0158] Laser-bonded portion 65D is formed in the second connecting portion 62B at a portion closer to the front end than laser-bonded portion 65E. In one example, when viewed from the thickness direction Z, laser-bonded portion 65D is formed in the portion of the second connecting portion 62B that overlaps with the front end of the second connecting portion 62C. More specifically, laser-bonded portion 65D is formed in the portion of the second connecting portion 62B adjacent to the front edge of the second connecting portion 62C in the transverse direction. Furthermore, when viewed from the thickness direction Z, laser-bonded portion 65D is located between laser-bonded portions 65A and 65B in the transverse direction X. Laser-bonded portion 65E is formed in the second connecting portion 62B at a portion closer to the front end than the central portion in the transverse direction X of the second connecting portion 62B. When viewed from the thickness direction Z, laser-bonded portion 65E is located between laser-bonded portions 65B and 65C in the transverse direction X. Thus, laser-bonded portions 65D and 65E are arranged in a manner that does not overlap with laser-bonded portions 65A, 65B, and 65C when viewed from the thickness direction Z. In addition, such as Figure 17 As shown, in this embodiment, the distance PD between laser bonding portions 65D and 65E is equal to the distances PC1 and PC2. Here, if the difference between distance PD and distance PC1 or PC2 is, for example, within 5% of distance PC1, it can be said that distance PD is equal to distances PC1 and PC2. Furthermore, in this embodiment, the distance PD is equal to the distance PB between laser bonding portions 64D and 64E of the first connecting portion 61B. Here, if the difference between distance PD and distance PB is, for example, within 5% of distance PB, it can be said that distance PD is equal to distance PB.

[0159] like Figure 16 as well as Figure 17 As shown, a laser bonding portion 65F is formed on the second connecting portion 62C. The laser bonding portion 65F bonds to the second connecting portion 62B. Therefore, the laser bonding portion 65F is an example of a third conductor-side bonding portion. The laser bonding portion 65F extends along the longitudinal direction Y. In this embodiment, the magnitude of the longitudinal direction Y of the laser bonding portion 65F is equal to the magnitude of the longitudinal direction Y of the laser bonding portions 65A, 65B, and 65C. Here, if the maximum deviation of the magnitude of the longitudinal direction Y of the laser bonding portion 65F, the magnitude of the longitudinal direction Y of the laser bonding portion 65A, the magnitude of the longitudinal direction Y of the laser bonding portion 65B, and the magnitude of the longitudinal direction Y of the laser bonding portion 65C is, for example, within 5% of the magnitude of the longitudinal direction Y of the laser bonding portion 65A, it can be said that the magnitude of the longitudinal direction Y of the laser bonding portion 65F is equal to the magnitude of the longitudinal direction Y of the laser bonding portions 65A, 65B, and 65C. Furthermore, in this embodiment, the magnitude of the longitudinal direction Y of the laser bonding portion 65F is equal to the magnitude of the laser bonding portion 64F of the second connecting portion 62C (also refer to...). Figure 14The magnitudes of the longitudinal direction Y of the laser junction 65F and the laser junction 64F are equal. Here, if the difference between the magnitude of the longitudinal direction Y of the laser junction 65F and the laser junction 64F is, for example, within 5% of the magnitude of the longitudinal direction Y of the laser junction 64F, it can be said that the magnitude of the longitudinal direction Y of the laser junction 65F and the laser junction 64F are equal.

[0160] The laser-bonded portion 65F is formed in the second connecting portion 62C, closer to the front end than the central portion in the transverse direction X of the second connecting portion 62C. The laser-bonded portion 65F is located between the laser-bonded portions 65D and 65E in the transverse direction X. Thus, when viewed from the thickness direction Z, the laser-bonded portion 65F is offset from the laser-bonded portions 65D and 65E. Furthermore, when viewed from the thickness direction Z, the laser-bonded portion 65F is positioned to coincide with the laser-bonded portion 65B.

[0161] Thus, in the second connection portion 62 of the first drive lead 60, the laser bonding portions formed on adjacent metal plates in the metal plate stacking direction are offset in a manner that they do not overlap in the thickness direction. On the other hand, in the second connection portion 62 of the first drive lead 60, the laser bonding portions formed on metal plates that are separated in the metal plate stacking direction are arranged in a manner that they overlap in the thickness direction.

[0162] In this embodiment, such as Figure 17 As shown, in a top view, three laser-jointed portions 65A, 65B, 65C, two laser-jointed portions 65D, 65E, and one laser-jointed portion 65F are formed at equal intervals in the transverse direction X.

[0163] In addition, such as Figure 17 As shown in the enlarged view, a recess 65x is formed on the end of the laser-bonded portion 65B on the metal plate 60B side in the thickness direction Z. The recess 65x is curved in shape in the cross-sectional view taken along a plane in the transverse direction X and the thickness direction Z. Through this recess 65x, the laser-bonded portion 65B does not contact the metal plate 60B. Furthermore, the other laser-bonded portions 65A and 65C of the metal plate 60A, and the laser-bonded portions 65D and 65E of the metal plate 60B, also have recesses 65x in the same manner as the laser-bonded portion 65B. Therefore, the other laser-bonded portions 65A and 65C of the metal plate 60A do not contact the metal plate 60B. Additionally, the laser-bonded portions 65D and 65E do not contact the metal plate 60C.

[0164] like Figure 12 as well as Figure 13 As shown, in the side view of the metal plate 60A viewed from the longitudinal direction Y, the shape of the connecting portion 63A of the metal plate 60A is oriented towards the supporting substrate 40 (see reference). Figure 10(a)) A rectangular concave opening. The connecting portion 63A can be divided into a first vertical portion 66A, a second vertical portion 67A, and a horizontal portion 68A. The first vertical portion 66A and the second vertical portion 67A are arranged apart in the transverse direction X. The horizontal portion 68A connects the first vertical portion 66A and the second vertical portion 67A in the transverse direction X. The first vertical portion 66A extends from the base end of the first connecting portion 61A in the thickness direction Z. The second vertical portion 67A extends from the base end of the second connecting portion 62A in the thickness direction Z. The thickness direction Z of the first vertical portion 66A is larger than that of the second vertical portion 67A. The horizontal portion 68A connects the end of the first vertical portion 66A opposite to the first connecting portion 61A in the thickness direction Z, and the end of the second vertical portion 67A opposite to the second connecting portion 62A in the thickness direction Z. Therefore, in the thickness direction Z, the horizontal portion 68A is disposed closer to the top resin surface 15 of the sealing resin 10 than the input lead 22 (see reference). Figure 10 (a)).

[0165] The connecting portion 63B of metal plate 60B is stacked on the connecting portion 63A of metal plate 60A. More specifically, the shape of the connecting portion 63B in the side view of metal plate 60B viewed from the longitudinal direction Y is the same as that of the connecting portion 63A, which is a rectangular concave shape. The connecting portion 63B can be divided into a first vertical portion 66B, a second vertical portion 67B, and a horizontal portion 68B. The first vertical portion 66B is stacked on the first vertical portion 66A in the transverse direction X. The first vertical portion 66B contacts the first vertical portion 66A on its entire surface. The second vertical portion 67B is stacked on the second vertical portion 67A in the transverse direction X. The second vertical portion 67B contacts the second vertical portion 67A on its entire surface. The horizontal portion 68B is stacked on the horizontal portion 68A in the thickness direction Z. The horizontal portion 68B contacts the horizontal portion 68A on its entire surface.

[0166] The connecting portion 63C of metal plate 60C is stacked on the connecting portion 63B of metal plate 60B. More specifically, the shape of the connecting portion 63C in the side view of metal plate 60C viewed from the longitudinal direction Y is the same as that of the connecting portion 63A, which is a rectangular concave shape. The connecting portion 63C can be divided into a first vertical portion 66C, a second vertical portion 67C, and a horizontal portion 68C. The first vertical portion 66C is stacked on the first vertical portion 66B in the transverse direction X. The first vertical portion 66C contacts the first vertical portion 66B on its entire surface. The second vertical portion 67C is stacked on the second vertical portion 67B in the transverse direction X. The second vertical portion 67C contacts the second vertical portion 67B on its entire surface. The horizontal portion 68C is stacked on the horizontal portion 68B in the thickness direction Z. The horizontal portion 68C contacts the horizontal portion 68B on its entire surface.

[0167] like Figure 5As shown, the second driving lead 70 is connected to the source electrode 33 of the first semiconductor element 30U and the end of the conductive member 42A side of the main surface 42sb of the conductive member 42B in the transverse direction X. Thus, the conductive member 42B is an example of a driving conductor, and the main surface 42sb of the conductive member 42B is an example of a driving connection surface of the driving conductor.

[0168] The second drive lead 70, viewed from above, is a strip extending in the transverse direction X. The second drive lead 70 has a structure in which multiple thin metal plates are stacked in the thickness direction Z. In this embodiment, as... Figure 18 as well as Figure 19 As shown, the second driving lead 70 is a structure in which three thin metal plates, namely metal plates 70A, 70B, and 70C, are stacked sequentially in the thickness direction Z. Metal plates 70A, 70B, and 70C are made of the same metal material. An example of the material constituting metal plates 70A, 70B, and 70C is Cu (copper). Furthermore, the number of metal plates constituting the second driving lead 70 can be arbitrarily changed. In one example, the number of metal plates constituting the second driving lead 70 is set according to the allowable current of the first semiconductor element 30U. The thicknesses (dimensions in the thickness direction Z) of metal plates 70A, 70B, and 70C are respectively the same as those of metal plates 60A, 60B, and 60C (refer to...). Figure 12 as well as Figure 13 The thickness is the same, ranging from 0.05mm to 0.2mm. In this embodiment, 0.05mm thick metal plates 70A, 70B, and 70C are used.

[0169] The second driving lead 70 has a first connection portion 71 that is connected to the source electrode 33 of the first semiconductor element 30U, a second connection portion 72 that is connected to the conductive member 42B, and a connection portion 73 that connects the first connection portion 71 and the second connection portion 72. Furthermore, since the second driving lead 70 is constructed by stacking metal plates 70A to 70C, each of the metal plates 70A to 70C has a first connection portion 71, a second connection portion 72, and a connection portion 73. Therefore, the first connection portion 71, the second connection portion 72, and the connection portion 73 of each of the metal plates 70A to 70C are distinguished by the letter sequence A to C after the symbol. In this embodiment, the metal plate 70A is a single component integrally formed of the first connection portion 71A, the second connection portion 72A, and the connection portion 73A. The metal plate 70B is a single component integrally formed of the first connection portion 71B, the second connection portion 72B, and the connection portion 73B. The metal plate 70C is a single component integrally formed with the first connecting portion 71C, the second connecting portion 72C, and the connecting portion 73C. The first connecting portion 71 is formed by stacking the first connecting portions 71A, 71B, and 71C in the thickness direction Z. The second connecting portion 72 is formed by stacking the second connecting portions 72A, 72B, and 72C in the thickness direction Z.

[0170] like Figure 20 as well as Figure 21 As shown, the structure of the first connection portion 71 of the second drive lead 70 is similar to that of the second connection portion 62 of the first drive lead 60 (see reference). Figure 16 as well as Figure 17 The structures of the first connecting portion 71A of metal plate 70A and the second connecting portion 62A of metal plate 60A are identical. More specifically, the structure of the first connecting portion 71B of metal plate 70B is identical to the structure of the second connecting portion 62B of metal plate 60B, and the structure of the first connecting portion 71C of metal plate 70C is identical to the structure of the second connecting portion 62C of metal plate 60C. Furthermore, the stacking method of the first connecting portions 71A, 71B, and 71C is identical to the stacking method of the second connecting portions 62A, 62B, and 62C.

[0171] The first connecting portion 71A is laser-welded to the source electrode 33 of the first semiconductor element 30U. The first connecting portion 71B is laser-welded to the first connecting portion 71A. The first connecting portion 71C is laser-welded to the first connecting portion 71B. Laser-bonded portions 74A, 74B, and 74C are formed on the first connecting portion 71A in the same manner as the second connecting portion 62A. The shape, size, and arrangement of each laser-bonded portion 74A, 74B, and 74C are the same as those of the laser-bonded portions 65A, 65B, and 65C formed on the second connecting portion 62A. Laser-bonded portions 74D and 74E are formed on the first connecting portion 71B in the same manner as the second connecting portion 62B. The shape, size, and arrangement of each laser-bonded portion 74D and 74E are the same as those of the laser-bonded portions 65D and 65E formed on the second connecting portion 65B. A laser-bonded portion 74F is formed on the first connecting portion 71C in the same manner as the second connecting portion 62C. The shape, size, and arrangement of the laser-bonded portion 74F are the same as those of the laser-bonded portion 65F on the second connecting portion 62C. A recess 65x (refer to) is formed on each of the laser-bonded portions 74A to 74F. Figure 17 Similarly, a recess 74x is formed.

[0172] like Figure 22 as well as Figure 23 As shown, the structure of the second connection portion 72 of the second drive lead 70 is the same as that of the first connection portion 61 of the first drive 60 (see reference). Figure 14 as well as Figure 15 The structures of the second connecting portion 72A of metal plate 70A and the first connecting portion 61A of metal plate 60A are identical. More specifically, the structure of the second connecting portion 72B of metal plate 70B is identical to the structure of the first connecting portion 61B of metal plate 60B, and the structure of the second connecting portion 72C of metal plate 70C is identical to the structure of the first connecting portion 61C of metal plate 60C. Furthermore, the stacking method of the second connecting portions 72A, 72B, and 72C is the same as the stacking method of the first connecting portions 61A, 61B, and 61C.

[0173] The second connecting portion 72A is joined to the main surface sb of the conductive component 42B by laser welding. The second connecting portion 72B is joined to the second connecting portion 72A by laser welding. The second connecting portion 72C is joined to the second connecting portion 72B by laser welding. Laser-bonded portions 75A, 75B, and 75C are formed on the second connecting portion 72A in the same manner as the first connecting portion 61A. The shape, size, and arrangement of each laser-bonded portion 75A, 75B, and 75C are the same as those of the laser-bonded portions 64A, 64B, and 64C formed on the first connecting portion 61A. Laser-bonded portions 75D and 75E are formed on the second connecting portion 72B in the same manner as the first connecting portion 61B. The shape, size, and arrangement of each laser-bonded portion 75D and 75E are the same as those of the laser-bonded portions 64D and 64E formed on the first connecting portion 61B. A laser bonding portion 75F is formed on the second connecting portion 72C in the same manner as the first connecting portion 61C. The shape, size, and arrangement of the laser bonding portion 75F are the same as those of the laser bonding portion 64F formed on the first connecting portion 61C. A recess 64x (refer to) is formed on each of the laser bonding portions 75A to 75F. Figure 15 Similarly, a recess of 75x is formed.

[0174] like Figure 18 as well as Figure 19 As shown, the shape of the connecting portion 73 of the second driving lead 70 in the side view of the second driving lead 70 viewed from the longitudinal direction Y is different from the shape of the connecting portion 63 of the second driving lead 70 in the side view of the first driving lead 60 viewed from the longitudinal direction Y. Specifically, the shape of the connecting portion 73 in the above side view is the same as that of the connecting portion 63, and it is formed as a rectangular concave shape that opens into the support substrate 40. On the other hand, since the distance in the thickness direction Z between the main surface 42sb of the first semiconductor element 30U and the conductive member 42B is smaller than the distance in the thickness direction Z between the extension portion 22c of the input lead 22 and the second semiconductor element 30L, the depth of the concave shape of the connecting portion 73 is shallower than the depth of the concave shape of the connecting portion 63.

[0175] The shape of the connecting portion 73A of the metal plate 70A in the side view of the metal plate 70A viewed from the longitudinal direction Y is towards the supporting substrate 40 (see reference). Figure 11(a) A rectangular concave opening. The connecting portion 63A of the metal plate 70A can be divided into a first vertical portion 76A, a second vertical portion 77A, and a horizontal portion 78A. The first vertical portion 76A and the second vertical portion 77A are arranged apart in the transverse direction X. The horizontal portion 78A connects the first vertical portion 76A and the second vertical portion 77A in the transverse direction X. The first vertical portion 76A extends from the base end of the second connecting portion 72A in the thickness direction Z. The second vertical portion 77A extends from the base end of the first connecting portion 71A in the thickness direction Z. The thickness direction Z of the first vertical portion 76A is larger than the thickness direction Z of the second vertical portion 77A. In this embodiment, the thickness direction Z of the first vertical portion 76A is smaller than the thickness direction Z of the first vertical portion 66A of the metal plate 60A of the first driving lead 60. The thickness direction Z of the second vertical portion 77A is equal to the thickness direction Z of the second vertical portion 67A of the metal plate 60A. The horizontal portion 78A connects to the end of the first vertical portion 76A in the thickness direction Z opposite to the second connecting portion 72A, and to the end of the second vertical portion 77A in the thickness direction Z opposite to the first connecting portion 71A. The length of the horizontal portion 78A in the transverse direction X is equal to the length of the horizontal portion 68A in the transverse direction X of the metal plate 60A. Here, if the difference between the magnitude of the thickness direction Z of the second vertical portion 77A and the magnitude of the thickness direction Z of the second vertical portion 67A is, for example, within 5% of the magnitude of the thickness direction Z of the second vertical portion 67A, it can be said that the magnitude of the thickness direction Z of the second vertical portion 77A is equal to the magnitude of the thickness direction Z of the second vertical portion 67A. Furthermore, if the difference between the length of the horizontal portion X of the horizontal portion 78A and the length of the horizontal portion X of the horizontal portion 68A is, for example, within 5% of the length of the horizontal portion X of the horizontal portion 68A, it can be said that the length of the horizontal portion X of the horizontal portion 78A is equal to the length of the horizontal portion X of the horizontal portion 68A.

[0176] The connecting portion 73B of metal plate 70B is stacked on the connecting portion 73A of metal plate 70A. More specifically, the shape of the connecting portion 73B in the side view of metal plate 70B viewed from the longitudinal direction Y is the same as that of the connecting portion 73A, which is a rectangular concave shape. The connecting portion 73B can be divided into a first vertical portion 76B, a second vertical portion 77B, and a horizontal portion 78B. The first vertical portion 76B is stacked on the first vertical portion 76A in the transverse direction X. The first vertical portion 76B contacts the first vertical portion 76A on its entire surface. The second vertical portion 77B is stacked on the second vertical portion 77A in the transverse direction X. The second vertical portion 77B contacts the second vertical portion 77A on its entire surface. The horizontal portion 78B is stacked on the horizontal portion 78A in the thickness direction Z. The horizontal portion 78B contacts the horizontal portion 78A on its entire surface.

[0177] The connecting portion 73C of metal plate 70C is stacked on the connecting portion 73B of metal plate 70B. More specifically, the shape of the connecting portion 73C in the side view of metal plate 70C viewed from the longitudinal direction Y is the same as that of the connecting portion 73A, which is a rectangular concave shape. The connecting portion 73C can be divided into a first vertical portion 76C, a second vertical portion 77C, and a horizontal portion 78C. The first vertical portion 76C is stacked on the first vertical portion 76B in the transverse direction X. The first vertical portion 76C contacts the first vertical portion 76B on its entire surface. The second vertical portion 77C is stacked on the second vertical portion 77B in the transverse direction X. The second vertical portion 77C contacts the second vertical portion 77B on its entire surface. The horizontal portion 78C is stacked on the horizontal portion 78B in the thickness direction Z. The horizontal portion 78C contacts the horizontal portion 78B on its entire surface.

[0178] Thus, metal plate 70A is an example of a first metal plate connected to a semiconductor element, first connecting portion 71A is an example of a first element-side connecting portion of the first metal plate, second connecting portion 72A is an example of a first conductor-side connecting portion of the first metal plate, and connecting portion 73A is an example of a first connecting portion. Laser bonding portions 74A, 74B, and 74C formed on the first connecting portion 71A are examples of first element-side bonding portions of the first element-side connecting portion, and laser bonding portions 75A, 75B, and 75C formed on the second connecting portion 72A are examples of first conductor-side bonding portions of the first conductor-side connecting portion.

[0179] Metal plate 70B is an example of a second metal plate stacked on the first metal plate. First connecting portion 71B is an example of a second element-side connecting portion connected to the first element-side connecting portion. Second connecting portion 72B is an example of a second conductor-side connecting portion of the second metal plate. Connecting portion 73B is an example of a second connecting portion. Laser bonding portions 74D and 74E formed on the first connecting portion 71B are examples of second element-side bonding portions of the second element-side connecting portion. Laser bonding portions 75D and 75E formed on the second connecting portion 72B are examples of second conductor-side bonding portions of the second conductor-side connecting portion.

[0180] Metal plate 70C is an example of a third metal plate stacked on the second metal plate. First connecting portion 71C is an example of a third element-side connecting portion of the third metal plate. Second connecting portion 72C is an example of a third conductor-side connecting portion of the third metal plate. Connecting portion 73C is an example of a third connecting portion. Laser bonding portion 74F formed in first connecting portion 71C is an example of a third element-side bonding portion of the third element-side connecting portion. Laser bonding portion 75F formed in second connecting portion 72C is an example of a third conductor-side bonding portion of the third conductor-side connecting portion.

[0181] (Manufacturing method)

[0182] Secondly, refer to Figures 24-27The manufacturing method of the semiconductor device 1A according to this embodiment will be described. In the following description, the constituent elements of the semiconductor device 1A are indicated by the reference numerals. Figures 1 to 23 The various components of the semiconductor device 1A.

[0183] like Figure 24 As shown, the manufacturing method of semiconductor device 1A includes a support substrate preparation step (step S1), a component mounting step (step S2), a bonding step (step S3), a wire forming step (step S4), and a sealing step (step S5). In this embodiment, semiconductor device 1A is manufactured by performing the support substrate preparation step, the component mounting step, the bonding step, the wire forming step, and the sealing step in that order.

[0184] In the support substrate preparation process, support substrate 40 is prepared (refer to...). Figure 2 Specifically, conductive components 42A and 42B are first bonded to each other on the insulating substrate 41, separating them from each other. A pair of insulating layers 43A and 43B, and a plurality of support bases 29 are then bonded to the conductive components 42A and 42B. Furthermore, a pair of gate layers 44A and 44B, and a pair of detection layers 45A and 45B are bonded to the pair of insulating layers 43A and 43B.

[0185] In the component mounting process, a first semiconductor element 30U is mounted on conductive component 42A, and a second semiconductor element 30L is mounted on conductive component 42B. Specifically, silver paste is applied to the mounting area of ​​the first semiconductor element 30U in conductive component 42A, and silver paste is applied to the mounting area of ​​the second semiconductor element 30L in conductive component 42B. As a coating method, screen printing using a mask can be used. Furthermore, the back surface 32 of the first semiconductor element 30U is bonded to the mounting area of ​​the first semiconductor element 30U in conductive component 42A, and the back surface 32 of the second semiconductor element 30L is bonded to the mounting area of ​​the second semiconductor element 30L in conductive component 42B. Moreover, for the mounting of the first semiconductor element 30U and the second semiconductor element 30L, conductive bonding components such as solder can be used instead of silver paste.

[0186] The joining process includes a first joining process (step S31), a second joining process (step S32), and a third joining process (step S33).

[0187] The first bonding process is the bonding of input leads 21 and 22 and output leads 23 onto the support substrate 40. In this embodiment, firstly, input leads 21 are bonded onto the main surface 42sa of the conductive member 42A. Examples of bonding methods include ultrasonic welding and laser welding. Next, an insulating member 28 is mounted on the input leads 21. Then, input leads 22 are mounted on the insulating member 28. Thus, the insulating member 28 is held between the input leads 21 and 22 in the thickness direction Z. Furthermore, multiple extensions 22c of the input leads 22 are respectively mounted on the support base 29. Next, output leads 23 are bonded onto the conductive member 42B. Examples of bonding methods include ultrasonic welding and laser welding. Furthermore, the order of bonding input leads 21 and 22 onto the conductive member 42A and bonding output leads 23 onto the conductive member 42B can be arbitrarily changed.

[0188] The second bonding process includes a first process of preparing a lead frame for forming a pair of control leads 24A, 24B, a pair of detection leads 25A, 25B, a plurality of simulation leads 26, and a pair of side leads 27A, 27B, and a second process of bonding the side leads 27A, 27B on the support substrate 40.

[0189] In the first step, a lead frame is prepared to connect a pair of control leads 24A and 24B, a pair of detection leads 25A and 25B, multiple simulation leads 26, and a pair of side leads 27A and 27B. Within the lead frame, the terminal portions 24b, 25b, and 26b of each lead 24A, 24B, 25A, 25B, and 26 are formed before being bent into an L-shape.

[0190] In the second step, the side lead 27A connected to the lead frame is joined on the main surface 42sa of the conductive member 42A, and the side lead 27B connected to the lead frame is joined on the main surface 42sb of the conductive member 42B. Examples of joining methods include ultrasonic welding and laser welding.

[0191] The third bonding process involves bonding multiple first driving leads 60 to multiple first semiconductor elements 30U and multiple extensions 22c of the input lead 22, and bonding multiple second driving leads 70 to multiple second semiconductor elements 30L and conductive components 42B. The bonding methods for the first driving leads 60 to the first semiconductor elements 30U, the bonding methods for the first driving leads 60 to the extensions 22c, the bonding methods for the second driving leads 70 to the second semiconductor elements 30L, and the bonding methods for the second driving leads 70 to the conductive components 42B are identical. Therefore, the bonding method for the first driving leads 60 to the first semiconductor elements 30U will be described in detail, while descriptions of other bonding processes will be omitted.

[0192] like Figures 25-27 As shown, the bonding device 200 is used to bond the first driving lead 60 to the source electrode 33 of the first semiconductor element 30U. The bonding device 200 includes a lead supply section 210 for supplying a metal plate and a laser irradiation section 220 for performing laser welding. In this embodiment, the laser irradiation section 220 is provided inside the lead supply section 210. The lead supply section 210 and the laser irradiation section 220 are configured to be independent and movable in the horizontal direction X, the vertical direction Y, and the thickness direction Z.

[0193] The third bonding process in the first drive lead 60 sequentially passes through the drive electrode connection process, the first connection part formation process, and the conductor connection process to form the metal plate 60A.

[0194] Figure 25 This indicates the drive electrode connection process. The drive electrode connection process is the process of connecting the first connection portion 61A of the metal plate 60A of the first drive lead 60 to the source electrode 33 of the first semiconductor element 30U.

[0195] like Figure 25As shown, the lead supply section 210 supplies a metal strip material 230 to the source electrode 33 of the first semiconductor element 30U and moves in the transverse direction X. The strip material 230 is, for example, Cu (copper). The laser irradiation section 220 irradiates the strip material 230 placed on the source electrode 33 from the side opposite to the source electrode 33 side in the thickness direction Z. The laser scans the strip material 230 in the longitudinal direction Y, irradiating it linearly. As a result, laser bonding portions 64A, 64B, and 64C are formed, bonding the source electrode 33 and the strip material 230. In detail, the lead supply section 210 moves in the transverse direction X such that a strip material 230 of transverse direction X length capable of forming the laser bonding portion 64A is placed on the source electrode 33. After the lead supply section 210 stops moving in the transverse direction X, the laser irradiation section 220 irradiates the strip material 230 on the source electrode 33 with a laser. As a result, the laser bonding portion 64A is formed. Next, the lead supply section 210 supplies the strip material 230 in the lateral direction X such that the length of the strip material 230 on the source electrode 33 in the lateral direction X is such that it can form the laser bond 64B, and moves it in the lateral direction X. After stopping the movement of the lead supply section 210 in the lateral direction X, the laser irradiation section 220 irradiates the strip material 230 on the source electrode 33 with laser light. Thus, the laser bond 64B is formed. Next, the lead supply section 210 supplies the strip material 230 in the lateral direction X such that the length of the strip material 230 on the source electrode 33 in the lateral direction X is such that it can form the laser bond 64C, and moves it in the lateral direction X. After stopping the movement of the lead supply section 210 in the lateral direction X, the laser irradiation section 220 irradiates the strip material 230 on the source electrode 33 with laser light. Thus, the laser bond 64C is formed. After the above processes, a first connecting portion 61A of the metal plate 60A is formed on the source electrode 33, and the first connecting portion 61A is joined to the source electrode 33.

[0196] In the first connecting portion forming process, the connecting portion 63A of the metal plate 60A is formed. Specifically, the lead supply unit 210 moves in a manner that supplies the strip material 230 and moves away from the first semiconductor element 30U in the thickness direction Z. This forms the first vertical portion 66A of the metal plate 60A. Furthermore, the lead supply unit 210 moves in a manner that supplies the strip material 230 and moves away from the first semiconductor element 30U in the horizontal direction X. This forms the horizontal portion 68A of the metal plate 60A. Finally, the lead supply unit 210 supplies the strip material 230 and moves towards the extension portion 22c in the thickness direction Z. This forms the second vertical portion 67A of the metal plate 60A.

[0197] The conductor connection process involves connecting the second connection portion 62A of the metal plate 60A to the main surface 22cs of the extension portion 22c of the input lead 22, which serves as a driving conductor. Specifically, the lead supply unit 210 supplies lead material 230 and moves in the lateral direction X. Therefore, a strip material 230 is placed on the main surface 22cs of the extension portion 22c. Furthermore, the laser irradiation unit 220 irradiates the strip material 230 placed on the extension portion 22c with a laser. The bonding device 200, similar to the first connection portion 61A, forms laser bonding portions 65A, 65B, and 65C on the strip material 230 by repeatedly supplying the strip material 230 to the extension portion 22c and bonding it with the laser. Then, the lead supply unit 210 cuts the strip material 230. Thus, the second connection portion 62A of the metal plate 60A is formed. That is, the metal plate 60A is bonded to the source electrode 33 of the second semiconductor element 30L and the main surface 22cs of the extension portion 22c of the input lead 22.

[0198] Secondly, in the third bonding process of the first drive lead 60, the metal plate 60A is formed sequentially through a first element-side lamination process, a second connection formation process, and a first conductor-side lamination process. That is, the conductor connection process is performed after the drive electrode connection process and before the first element-side lamination process.

[0199] Figure 26 This indicates the first component side stacking process. The first component side stacking process is a process in which the first connection portion 61B of the metal plate 60B of the first drive lead 60 is stacked on the first connection portion 61A of the metal plate 60A and connected to the first connection portion 61A.

[0200] like Figure 26As shown, the lead supply unit 210 supplies strip material 230 to the first connecting portion 61A of the metal plate 60A and moves in the lateral direction X. The laser irradiation unit 220 irradiates the strip material 230 placed on the first connecting portion 61A with a laser in the thickness direction Z from the side opposite to the first connecting portion 61A. The laser scans the strip material 230 in the longitudinal direction Y and irradiates it in a straight line. As a result, laser bonding portions 64D and 64E are formed, which join the first connecting portion 61A and the strip material 230. In detail, the lead supply unit 210 first supplies the strip material 230 to a position offset in the lateral direction X relative to the leading edge of the first connecting portion 61A and moves in the lateral direction X. Furthermore, the lead supply unit 210 stops moving in the lateral direction X when it has moved on the strip material 230 to a length in the lateral direction X that allows the laser bonding portion 64D to be formed. Furthermore, the laser irradiation unit 220 irradiates the strip material 230 on the first connecting portion 61A with a laser. This forms the laser-bonded portion 64D. Next, the lead supply unit 210 supplies the strip material 230 in the transverse direction X such that the length of the strip material 230 on the first connecting portion 61A in the transverse direction X is the length that can form the laser-bonded portion 64E, and moves it in the transverse direction X. After the lead supply unit 210 stops moving in the transverse direction X, the laser irradiation unit 220 irradiates the strip material 230 on the first connecting portion 61A with a laser. This forms the laser-bonded portion 64E. After the above processes, a first connecting portion 61B of the metal plate 60B is formed on the first connecting portion 61A, and the first connecting portion 61B is bonded to the first connecting portion 61A.

[0201] The second connecting portion forming process is the process of forming the connecting portion 63B of the metal plate 60B. Specifically, the lead supply unit 210 supplies the strip material 230 in such a way that it contacts the first vertical portion 66A of the metal plate 60A in the horizontal direction X, and moves away from the first semiconductor element 30U in the thickness direction Z. This forms the first vertical portion 66B of the metal plate 60B. Furthermore, the lead supply unit 210 supplies the strip material 230 in such a way that it contacts the horizontal portion 68A of the metal plate 60A in the thickness direction Z, and moves away from the first semiconductor element 30U in the horizontal direction X. This forms the horizontal portion 68C of the metal plate 60B. Finally, the lead supply unit 210 supplies the strip material 230 in such a way that it contacts the second vertical portion 67A of the metal plate 60A in the horizontal direction X, and moves towards the extension portion 22c in the thickness direction Z. This forms the second vertical portion 67B of the metal plate 60B.

[0202] The first conductor-side lamination process is a process in which the second connection portion 62B of the metal plate 60B, on which the first driving lead 60 is laminated, is connected to the second connection portion 62A. Specifically, the lead supply unit 210 supplies lead material 230 and moves in the lateral direction X. As a result, the strip material 230 is placed on the second connection portion 62A. Furthermore, the laser irradiation unit 220 irradiates the strip material 230 placed on the second connection portion 62A with a laser. The bonding device 200 is the same as that for the second connection portion 62A, and by repeatedly supplying the strip material 230 to the second connection portion 62A and bonding it with the laser, laser bonding portions 65D and 65E are formed on the strip material 230. Furthermore, the lead supply unit 210 cuts the strip material 230. As a result, the second connection portion 62B of the metal plate 60B is formed. That is, metal plate 60B is stacked on metal plate 60A and is joined with the first connecting portion 61A and the second connecting portion 62A of metal plate 60A.

[0203] Secondly, in the third bonding process of the first drive lead 60, the metal plate 60A is formed sequentially through the second element-side lamination process, the third connection formation process, and the second conductor-side lamination process. That is, the first conductor-side lamination process is performed after the first element-side lamination process and before the second element-side lamination process.

[0204] Figure 27 This indicates the second element-side stacking process. The second element-side stacking process is a process in which the first connecting portion 61C of the metal plate 60C with the first driving lead 60 is stacked on the first connecting portion 61B of the metal plate 60B and connected to the first connecting portion 61B.

[0205] like Figure 27As shown, the lead supply unit 210 supplies strip material 230 to the first connecting portion 61B of the metal plate 60B and moves in the lateral direction X. The laser irradiation unit 220 irradiates the strip material 230 placed on the first connecting portion 61B from the side opposite to the first connecting portion 61B in the thickness direction Z. The laser scans the strip material 230 in the longitudinal direction Y and irradiates it in a straight line. As a result, a laser bonding portion 64F is formed that joins the first connecting portion 61B and the strip material 230. In detail, the lead supply unit 210 first supplies the strip material 230 to a position offset in the lateral direction X relative to the leading edge of the first connecting portion 61B and moves in the lateral direction X. Furthermore, the lead supply unit 210 stops moving in the lateral direction X when it has moved on the strip material 230 to a length in the lateral direction X that allows the laser bonding portion 64F to be formed on the strip material 230. Furthermore, the laser irradiation unit 220 irradiates the strip material 230 on the first connecting portion 61B with a laser. This forms the laser-bonded portion 64F. Next, the lead supply unit 210 supplies the strip material 230 in the transverse direction X before the length of the strip material 230 in the first connecting portion 61A in the transverse direction X becomes the same as the length of the first connecting portion 61C in the transverse direction X, and moves it in the transverse direction X. This forms the first connecting portion 61C of the metal plate 60C.

[0206] The third connecting part forming process is the process of forming the connecting part 63C of the metal plate 60C. Specifically, the lead supply unit 210 supplies the strip material 230 in such a way that it contacts the first vertical part 66B of the metal plate 60B in the horizontal direction X, and moves away from the first semiconductor element 30U in the thickness direction Z. This forms the first vertical part 66C of the metal plate 60C. Furthermore, the lead supply unit 210 supplies the strip material 230 in such a way that it contacts the horizontal part 68B of the metal plate 60B in the thickness direction Z, and moves away from the first semiconductor element 30U in the horizontal direction X. This forms the horizontal part 68C of the metal plate 60C. Finally, the lead supply unit 210 supplies the strip material 230 in such a way that it contacts the second vertical part 67B of the metal plate 60B in the horizontal direction X, and moves towards the extension part 22c in the thickness direction Z. This forms the second vertical part 67C of the metal plate 60C.

[0207] The second conductor-side lamination process is a process in which the second connection portion 62C of the metal plate 60C, on which the first driving lead 60 is laminated, is connected to the second connection portion 62B of the metal plate 60B. Specifically, the lead supply unit 210 supplies the strip material 230 and moves it in the lateral direction X. As a result, the strip material 230 is placed on the second connection portion 62B. Furthermore, the laser irradiation unit 220 irradiates the strip material 230 placed on the second connection portion 62B with a laser. As a result, a laser bonding portion 65F is formed on the strip material 230. Furthermore, the lead supply unit 210 supplies the strip material 230 in the lateral direction X before the length of the strip material 230 in the lateral direction X on the second connection portion 62B becomes the length of the second connection portion X in the lateral direction X, and moves it in the lateral direction X. Then, the strip material 230 is cut. As a result, the second connection portion 62C of the metal plate 60C is formed. That is, metal plate 60C is stacked on metal plate 60B and joined with the first connecting portion 61B and the second connecting portion 62B of metal plate 60B. After the above process, the first driving lead 60 is formed.

[0208] In the third bonding process, the second driving lead 70 is formed in the same manner as the first driving lead 60. In summary, a metal plate 70A is formed by the bonding apparatus 200 to bond the source electrode 33 of the first semiconductor element 30U to the main surface 42sb of the conductive member 42B. Next, a metal plate 70B is formed on the metal plate 70A, with a first connecting portion 71A and a second connecting portion 72A respectively bonded to the metal plate 70A. Finally, a metal plate 70C is formed on the metal plate 70B, with the first connecting portion 71B and the second connecting portion 72B respectively bonded to the metal plate 70B.

[0209] The wire forming process involves connecting the gate layers 44A and 44B, the detection layers 45A and 45B, multiple semiconductor elements 30, control leads 24A and 24B, and detection leads 25A and 25B to the wires 51-58. In other words, the connection process is the process of forming the wires 51-58. The wires 51-58 are formed by wire bonding.

[0210] In the wire forming process, firstly, multiple first control wires 51 are formed to connect the gate electrodes 34 of multiple first semiconductor elements 30U to the gate layer 44A, and multiple second control wires 52 are formed to connect the gate electrodes 34 of multiple second semiconductor elements 30L to the gate layer 44B. Next, multiple first detection wires 55 are formed to connect the source electrodes 33 of multiple first semiconductor elements 30U to the detection layer 45, and multiple second detection wires 56 are formed to connect the source electrodes 33 of multiple second semiconductor elements 30L to the detection layer 45B. Next, first connection wires 53 are formed to connect the gate layer 44A to the control lead 24A, and second connection wires 57 are formed to connect the gate layer 44B to the control lead 24B. Finally, first connection wires 54 are formed to connect the detection layer 45A to the detection lead 25A, and second connection wires 58 are formed to connect the detection layer 45B to the detection lead 25B. Furthermore, the formation order of each wire 51 to 58 is not limited to the above order and can be arbitrarily changed.

[0211] In the sealing process, for example, a sealing resin 10 is formed by transfer molding using black epoxy resin. In this embodiment, the sealing resin 10 is formed to cover a portion of the input leads 21, 22, a portion of the output lead 23, a portion of a pair of control leads 24A, 24B, a portion of a pair of detection leads 25A, 25B, a portion of a plurality of simulated leads 26, a plurality of semiconductor elements 30, the portion of the insulating substrate 41 in the support substrate 40 excluding the substrate back surface 41b, each wire 51 to 58, a plurality of first drive leads 60, and a plurality of second drive leads 70. The terminal portions 21b, 22b of the input leads 21, 22, the terminal portion 23b of the output lead 23, the terminal portion 24b of the control leads 24A, 24B, the terminal portion 25b of the detection leads 25A, 25B, the terminal portion 26b of the plurality of simulated leads 26, and the substrate back surface 41b of the insulating substrate 41.

[0212] Then, the semiconductor device 1A is manufactured by cutting off unwanted portions of multiple leads 20 from the lead frame and bending control leads 24A, 24B, detection leads 25A, 25B, and multiple simulation leads 26. Furthermore, the above manufacturing method is one example of a semiconductor device manufacturing method, but is not limited thereto, and the order can be appropriately changed.

[0213] (effect)

[0214] The function of the semiconductor device 1A in this embodiment will be explained.

[0215] In recent years, development has been carried out on semiconductor devices such as SiC that can supply high current.

[0216] On the other hand, it's difficult to say that the components of a semiconductor device as a whole, excluding the semiconductor elements, are equally suited to high current applications. There is particularly room for improvement in the high current applications of the connection lines between the semiconductor elements and the terminals.

[0217] Figure 28 as well as Figure 29 This is a comparative example of a semiconductor device structure that has room for improvement in terms of such high current. Figure 28 This shows the bonding structure between the three drive leads 310 and the semiconductor element 30 in the semiconductor device 300 of the first comparative example. Figure 29 This illustrates the bonding structure between the four drive leads 410 and the semiconductor element 30 in the semiconductor device 400 of the second comparative example.

[0218] like Figure 28 As shown, the driving lead 310 in the semiconductor device 300 is bonded to the source electrode 33 of the semiconductor element 30. The driving lead 310 has a pair of first driving leads 311 and 312 and a second driving lead 313. The first driving leads 311, 312 and the second driving lead 313 are each formed from a metal plate. Viewed from above, the first driving leads 311, 312 and the second driving lead 313 are strips extending in the transverse direction X. The pair of first driving leads 311 and 312 are arranged adjacent to each other in the longitudinal direction Y. The second driving lead 313 is arranged to coincide with the first driving lead 312 when viewed from the thickness direction Z. The second driving lead 313 is located on the semiconductor element 30 side in the thickness direction Z compared to the first driving lead 312.

[0219] The first driving leads 311, 312 and the second driving lead 313 are ultrasonically welded to the source electrode 33. The transverse X lengths of the component-side connection portions 311A ​​of the first driving lead 311, 312, and 313A of the first driving lead 311, 312, and 313A of the second driving lead 313 are all shorter than the transverse X length of the first connection portion 61 of the first driving lead 60 in this embodiment. Therefore, in top view, the proportion of the area occupied by the component-side connection portions 311A, 312A, and 313A of the first driving leads 311, 312 and 313A relative to the area of ​​the source electrode 33 is small.

[0220] To solve this problem, such as Figure 29 As shown, a drive lead 410 in the semiconductor device 400 is coupled at multiple locations relative to the source electrode 33 of the semiconductor element 30. For example... Figure 29As shown, each drive lead 410 has four component-side connection portions 411, 412, 413, and 414 that are separated from each other in the transverse direction X. However, in each drive lead 410, the portions between component-side connection portions 411 and 412 in the transverse direction X, the portions between component-side connection portions 412 and 413 in the transverse direction X, and the portions between component-side connection portions 413 and 414 in the transverse direction X are respectively separated from the source electrode 33 in the thickness direction Z. These portions separated from the source electrode 33 in the thickness direction Z are necessary because of the vibration of the metal plate constituting each drive lead 410 in the transverse direction X during ultrasonic welding. Therefore, in top view, the proportion of the area of ​​the element-side connection portions 411 to 414 relative to the area of ​​the source electrode 33 is larger than the proportion of the area of ​​the element-side connection portions 311A, 312A, and 313A of the first driving leads 311 and 312 and the second driving leads 313 relative to the area of ​​the source electrode 33, but there is still room for improvement.

[0221] Furthermore, when the drive leads 310 and 410 are joined to the source electrode 33 by ultrasonic welding, the load applied to the source electrode 33 increases. The component-side connections 311A-313A and 411-414, joined to the source electrode 33 by ultrasonic welding, appear convex and concave in a side view of the drive leads 310 and 410 viewed from the longitudinal direction X. This is because, during ultrasonic welding, the metal plate assembly is deformed and pressed against the source electrode 33 while vibration is applied. As a result, it is difficult for the component-side connections 311A-313A and 411-414 to form a structure in which metal plates are stacked in the thickness direction Z. Even if the component-side connections 311A-313A and 411-414 can be stacked in the thickness direction Z, the contact area between adjacent metal plates in the thickness direction Z of the component-side connections 311A-313A and 411-414 becomes smaller.

[0222] In view of this, in this embodiment, the first driving lead 60 is joined to the source electrode 33 of the first semiconductor element 30U by laser welding, and the second driving lead 70 is joined to the source electrode 33 of the second semiconductor element 30L by laser welding. Therefore, the first connection portion 61 of the first driving lead 60 can be joined to the source electrode 33 while its approximately entire surface is in contact with the source electrode 33. Thus, the area of ​​the first connection portion 61 (61A) relative to the area of ​​the source electrode 33 can be increased. Furthermore, compared to joining by ultrasonic welding, the mechanical load on the source electrode 33 is smaller when joined by laser welding. Therefore, the source electrode 33 is less susceptible to adverse effects caused by the mechanical load on the source electrode 33.

[0223] (Effect)

[0224] The semiconductor device 1A according to this embodiment can achieve the following effects.

[0225] (1-1) The first driving lead 60 has a metal plate 60A connected to the second semiconductor element 30L, and a metal plate 60B stacked on the metal plate 60A. The metal plate 60A has a first connection portion 61A connected to the source electrode 33 of the second semiconductor element 30L, and the metal plate 60B has a first connection portion 61B connected to the first connection portion 61A. The first connection portions 61A and 61B are stacked in the thickness direction Z. According to this structure, the bonding area of ​​the source electrode 33 in the first connection portion 61 of the first driving lead 60 can be increased, and the cross-sectional area of ​​the first connection portion 61 of the first driving lead 60 cut by planes along the thickness direction Z and the longitudinal direction Y can be increased. Therefore, the upper limit (allowable current) of the current flowing into the first driving lead 60 from the source electrode 33 of the second semiconductor element 30L can be increased.

[0226] The second driving lead 70 has a metal plate 70A connected to the first semiconductor element 30U, and a metal plate 70B stacked on the metal plate 70A. The metal plate 70A has a first connection portion 71A connected to the source electrode 33 of the first semiconductor element 30U, and the metal plate 70B has a first connection portion 71B connected to the first connection portion 71A. The first connection portions 71A and 71B are stacked in the thickness direction Z. With this structure, the cross-sectional area of ​​the first connection portion 71 of the second driving lead 70 can be increased, and the cross-sectional area of ​​the first connection portion 71 of the second driving lead 70 can be increased by cutting it with a plane along the thickness direction Z and the longitudinal direction Y. Therefore, the upper limit (allowable current) of the current flowing into the second driving lead 70 from the source electrode 33 of the first semiconductor element 30U can be increased.

[0227] (1-2) The first driving lead 60 has a metal plate 60C stacked on the metal plate 60B. The metal plate 60C has a first connection portion 61C connected to the first connection portion 61B of the metal plate 60B. The first connection portion 61B and the first connection portion 61C are stacked in the thickness direction. According to this structure, the cross-sectional area of ​​the first connection portion 61 of the first driving lead 60 can be further increased by cutting it with a plane along the thickness direction Z and the longitudinal direction Y. Therefore, the allowable current from the source electrode 33 of the second semiconductor element 30L to the first driving lead 60 can be further increased.

[0228] The second drive lead 70 has a metal plate 70C stacked on the metal plate 70B. The metal plate 70C has a first connection portion 71C connected to the first connection portion 71B of the metal plate 70B. The first connection portion 71B and the first connection portion 71C are stacked in the thickness direction Z. According to this structure, the cross-sectional area of ​​the first connection portion 71 of the second drive lead 70 can be further increased by cutting a plane along the thickness direction Z and the longitudinal direction Y. Therefore, the allowable current from the source electrode 33 of the first semiconductor element 30U to the second drive lead 70 can be further increased.

[0229] (1-3) The laser bonding portions 64A, 64B, and 64C formed on the first connecting portion 61A of the first driving lead 60 are offset from the laser bonding portions 64D and 64E formed on the first connecting portion 61B when viewed from the thickness direction Z. According to this structure, since the portions of the first connecting portions 61A and 61B adjacent to each other in the thickness direction Z, excluding the laser bonding portions 64A to 64E, are formed as flat surfaces, the contact area between the first connecting portion 61A and the first connecting portion 61B is increased. Therefore, current can flow smoothly from the metal plate 60A to the metal plate 60B.

[0230] The laser bonding portions 74A, 74B, and 74C formed on the first connecting portion 71A of the second drive lead 70 are arranged offset from the laser bonding portions 74D and 74E formed on the first connecting portion 71B when viewed from the thickness direction Z. According to this structure, since the portions of the first connecting portions 71A and 71B of the metal plates 70A and 70B other than the laser bonding portions 74A to 74E are formed as flat surfaces in the thickness direction Z, the contact area between the first connecting portion 71A and the first connecting portion 71B is increased. Therefore, current can flow smoothly from the metal plate 70A to the metal plate 70B.

[0231] (1-4) The laser-bonded portion 64F formed on the first connecting portion 61C of the first driving lead 60, when viewed from the thickness direction Z, is disposed offset from the laser-bonded portions 64D and 64E formed on the first connecting portion 61B. According to this structure, since the portion of the first connecting portion 61B of the metal plate 60B other than the laser-bonded portions 64D and 64E is formed as a flat surface, the first connecting portions 61B and 61C are joined to each other via the laser-bonded portion 64F when the flat surface of the first connecting portion 61B of the metal plate 60B is in contact with the first connecting portion 61C of the metal plate 60C. Therefore, it becomes easier to join the first connecting portions 61B and 61C.

[0232] The laser-bonded portion 74F formed on the first connecting portion 71C of the second drive lead 70, when viewed from the thickness direction Z, is offset from the laser-bonded portions 74D and 74E formed on the first connecting portion 71B. According to this structure, since the portion of the first connecting portion 71B of the metal plate 70B other than the laser-bonded portions 74D and 74E is formed as a flat surface, the first connecting portions 71B and 71C are joined to each other via the laser-bonded portion 74F when the flat surface of the first connecting portion 71B of the metal plate 70B is in contact with the first connecting portion 71C of the metal plate 70C. Therefore, it becomes easier to join the first connecting portions 71B and 71C.

[0233] (1-5) When viewed from the thickness direction Z, the laser bonding portion 64F of the first connecting portion 61C of the first driving lead 60 coincides with the laser bonding portion 64B of the first connecting portion 61A. According to this structure, when viewed from the thickness direction Z, the laser bonding portion 64B is offset from the laser bonding portions 64D and 64E of the first connecting portion 61B. Therefore, since the position of the laser bonding portion 64F coincides with the position of the laser bonding portion 64B, it is difficult for the laser bonding portion 64F to coincide with the laser bonding portion 64D and 64E.

[0234] When viewed from the thickness direction Z, the laser bonding portion 74F of the first connecting portion 71C of the second drive lead 70 coincides with the laser bonding portion 74B of the first connecting portion 71A. According to this structure, since the laser bonding portion 74B is offset from the laser bonding portions 74D and 74E of the first connecting portion 71B when viewed from the thickness direction Z, it is difficult for the laser bonding portion 74F to coincide with the position of the laser bonding portion 74B.

[0235] (1-6) The number of laser-bonded portions 64D and 64E in the first connecting portion 61B of metal plate 60B is less than the number of laser-bonded portions 64A, 64B, and 64C in the first connecting portion 61A of metal plate 60A, and the number of laser-bonded portions 64F in the first connecting portion 61C of metal plate 60C is less than the number of laser-bonded portions 64D and 64E in the first connecting portion 61B. According to this structure, since the number of laser-bonded portions is reduced, the time required to form the laser-bonded portions is reduced. Therefore, the time required for the third bonding process can be reduced.

[0236] The number of laser-bonded portions 74D and 74E in the first connecting portion 71B of metal plate 70B is less than the number of laser-bonded portions 74A, 74B, and 74C in the first connecting portion 71A of metal plate 70A, and the number of laser-bonded portions 74F in the first connecting portion 71C of metal plate 70C is less than the number of laser-bonded portions 74D and 74E in the first connecting portion 71B. According to this structure, since the number of laser-bonded portions is reduced, the time required to form the laser-bonded portions is reduced. Therefore, the time required for the third bonding process is reduced.

[0237] (1-7) The metal plate 60A of the first drive lead 60 has a second connecting portion 62A connected to the main surface 22cs of the extension 22c of the input lead 22, and the metal plate 60B has a second connecting portion 62B connected to the second connecting portion 62A. The second connecting portions 62A and 62B are stacked in the thickness direction Z. According to this structure, the bonding area of ​​the main surface 22cs of the extension 22c in the second connecting portion 62 of the first drive lead 60 can be increased, and the cross-sectional area of ​​the second connecting portion 62 of the first drive lead 60 cut by planes along the thickness direction Z and the longitudinal direction Y can be increased. Therefore, the upper limit (allowable current) of the current flowing into the extension 22c from the first drive lead 60 can be increased.

[0238] The metal plate 70A of the second drive lead 70 has a second connecting portion 72A connected to the main surface 42sb of the conductive member 42B, and the metal plate 70B has a second connecting portion 72B connected to the second connecting portion 72A. The second connecting portions 72A and 72B are stacked in the thickness direction Z. According to this structure, the cross-sectional area of ​​the second connecting portion 72 of the second drive lead 70 can be increased, and the cross-sectional area of ​​the second connecting portion 72 is increased by cutting it with a plane along the thickness direction Z and the longitudinal direction Y. Therefore, the upper limit (allowable current) of the current that can flow from the second drive lead 70 into the conductive member 42B can be increased.

[0239] (1-8) The metal plate 60C of the first drive lead 60 has a second connection portion 62C connected to the second connection portion 62B of the metal plate 60B. The second connection portions 62B and 62C are stacked in the thickness direction Z. According to this structure, the cross-sectional area of ​​the second connection portion 62 of the first drive lead 60 is further increased by cutting it with a plane along the thickness direction Z and the longitudinal direction Y. Therefore, the allowable current from the first drive lead 60 to the extension portion 22c can be further increased.

[0240] The metal plate 70C of the second drive lead 70 has a second connection portion 72C connected to the second connection portion 72B of the metal plate 70B. The second connection portions 72B and 72C are stacked in the thickness direction Z. According to this structure, the cross-sectional area of ​​the second connection portion 72 of the second drive lead 70 is further increased by cutting it with a plane along the thickness direction Z and the longitudinal direction Y. Therefore, the allowable current from the second drive lead 70 to the conductive member 42B can be further increased.

[0241] (1-9) The laser bonding portions 65A, 65B, and 65C formed on the second connecting portion 62A of the first driving lead 60 are arranged offset from the laser bonding portions 65D and 65E formed on the second connecting portion 62B when viewed from the thickness direction Z. According to this structure, since the portions of the second connecting portions 62A and 62B of adjacent metal plates 60A and 60B other than the laser bonding portions 65A to 65E are formed as flat surfaces in the thickness direction Z, the contact area between the second connecting portions 62A and 62B is increased. Therefore, current can flow smoothly from metal plate 60A to metal plate 60B.

[0242] The laser bonding portions 75A, 75B, and 75C formed on the second connection portion 72A of the second drive lead 70 are arranged offset from the laser bonding portions 75D and 75E formed on the second connection portion 72B when viewed from the thickness direction Z. According to this structure, since the portions of the second connection portions 72A and 72B adjacent to each other on the metal plates 70A and 70B in the thickness direction Z, other than the laser bonding portions 75A to 75E, are formed as flat surfaces, the contact area between the second connection portion 72A and the second connection portion 72B is increased. Therefore, current can flow smoothly from the metal plate 70A to the metal plate 70B.

[0243] (1-10) The laser-bonded portion 64F formed on the second connecting portion 62C of the first driving lead 60, when viewed from the thickness direction Z, is disposed offset from the laser-bonded portions 65D and 65E formed on the second connecting portion 62B. According to this structure, since the portion of the second connecting portion 62B of the metal plate 60B other than the laser-bonded portions 65D and 65E is formed as a flat surface, the second connecting portions 62B and 62C are connected to each other via the laser-bonded portion 65F when the flat surface of the second connecting portion 62B of the metal plate 60B is in contact with the second connecting portion 62C of the metal plate 60C. Therefore, it becomes easier to join the second connecting portions 62B and 62C.

[0244] The laser-bonded portion 75F formed on the second connecting portion 72C of the second drive lead 70, when viewed from the thickness direction Z, is offset from the laser-bonded portions 75D and 75E formed on the second connecting portion 72B. According to this structure, since the portion of the second connecting portion 72B of the metal plate 70B other than the laser-bonded portions 75D and 75E is formed as a flat surface, the second connecting portions 72B and 72C are joined together by the laser-bonded portion 75F when the flat surface of the second connecting portion 72B of the metal plate 70B is in contact with the second connecting portion 72C of the metal plate 70C. Therefore, it becomes easier to join the second connecting portions 72B and 72C.

[0245] (1-11) When viewed from the thickness direction Z, the laser bonding portion 65F of the second connecting portion 62C of the first driving lead 60 coincides with the laser bonding portion 65B of the second connecting portion 62A. According to this structure, when viewed from the thickness direction Z, the laser bonding portion 65B is offset from the laser bonding portions 65D and 65E of the second connecting portion 62B. Therefore, since the position of the laser bonding portion 65F coincides with the position of the laser bonding portion 65B, it is difficult for the laser bonding portion 65F to coincide with the laser bonding portions 65D and 65E.

[0246] When viewed from the thickness direction Z, the laser bonding portion 75F of the second connection portion 72C of the second drive lead 70 coincides with the laser bonding portion 75B of the second connection portion 72A. According to this structure, since the laser bonding portion 75B is offset from the laser bonding portions 75D and 75E of the second connection portion 72B when viewed from the thickness direction Z, it is difficult for the laser bonding portion 75F to coincide with the laser bonding portions 75D and 75E.

[0247] (1-12) The number of laser-joined portions 65D and 65E in the second connecting portion 62B of metal plate 60B is less than the number of laser-joined portions 65A, 65B, and 65C in the second connecting portion 62A of metal plate 60A, and the number of laser-joined portions 65F in the second connecting portion 62C of metal plate 60C is less than the number of laser-joined portions 65D and 65E in the second connecting portion 62B. According to this structure, since the number of laser-joined portions is reduced, the time required to form the laser-joined portions is reduced. Therefore, the time required for the third joining process can be reduced.

[0248] The number of laser-bonded portions 75D and 75E in the second connecting portion 72B of metal plate 70B is less than the number of laser-bonded portions 75A, 75B, and 75C in the second connecting portion 72A of metal plate 70A, and the number of laser-bonded portions 75F in the second connecting portion 72C of metal plate 70C is less than the number of laser-bonded portions 75D and 75E in the second connecting portion 72B. According to this structure, since the number of laser-bonded portions is reduced, the time required to form the laser-bonded portions is reduced. Therefore, the time required for the third bonding process can be reduced.

[0249] (1-13) The connecting portion 63A of metal plate 60A and the connecting portion 63B of metal plate 60B are stacked. Therefore, since the connecting portion 63A and the connecting portion 63B are in contact, for example, during the sealing process, it is difficult for a portion of the sealing resin 10 to enter between the connecting portion 63A and the connecting portion 63B. Therefore, deformation caused by the difference in the coefficients of thermal expansion between the sealing resin 10 and the metal plates 60A and 60B, resulting in separation between the metal plates 60A and 60B, can be suppressed. Therefore, it is possible to suppress the decrease in the reliability of the first drive lead 60.

[0250] Furthermore, the connecting portion 63B of metal plate 60B and the connecting portion 63C of metal plate 60C are stacked. Therefore, since the connecting portion 63B and the connecting portion 63C are in contact, for example, during a sealing process, it is difficult for a portion of the sealing resin 10 to enter between the connecting portion 63B and the connecting portion 63C. Therefore, deformation that could occur due to the difference in the coefficients of thermal expansion between the sealing resin 10 and the metal plates 60B and 60C, causing them to separate, can be suppressed. Therefore, a decrease in the reliability of the first drive lead 60 can be suppressed.

[0251] The connecting portion 73A of metal plate 70A and the connecting portion 73B of metal plate 70B are stacked. Therefore, since the connecting portion 73A and the connecting portion 73B are in contact, for example, during the sealing process, it is difficult for a portion of the sealing resin 10 to enter between the connecting portion 73A and the connecting portion 73B. Therefore, deformation caused by the difference in the coefficients of thermal expansion between the sealing resin 10 and the metal plates 70A and 70B, resulting in separation between the metal plates 70A and 70B, can be suppressed. Therefore, a decrease in the reliability of the second drive lead 70 can be suppressed.

[0252] Furthermore, the connecting portion 73B of metal plate 70B and the connecting portion 73C of metal plate 70C are stacked. Therefore, since the connecting portion 73B and the connecting portion 73C are in contact, for example, during the sealing process, it is difficult for a portion of the sealing resin 10 to enter between the connecting portion 73B and the connecting portion 73C. Therefore, deformation caused by the difference in the coefficients of thermal expansion between the sealing resin 10 and the metal plates 70B and 70C, resulting in separation between the metal plates 70B and 70C, can be suppressed. Therefore, a decrease in the reliability of the second drive lead 70 can be suppressed.

[0253] (1-14) The first connecting portion 61A of the metal plate 60A is joined to the source electrode 33 of the second semiconductor element 30L by laser processing (laser welding). According to this structure, for example, compared to the case where the first connecting portion 61A is joined to the source electrode 33 by ultrasonic welding, the load applied to the source electrode 33 is smaller when the first connecting portion 61A is joined to the source electrode 33. Therefore, the reduction in the reliability of the second semiconductor element 30L can be reduced.

[0254] Furthermore, compared to the case where the first connection portion 61A is joined to the source electrode 33 by ultrasonic welding, for example, the contact area between the source electrode 33 of the second semiconductor element 30L and the first connection portion 61A is increased. Therefore, the allowable current from the source electrode 33 of the second semiconductor element 30L to the first drive lead 60 can be increased.

[0255] The first connecting portion 71A of the metal plate 70A is joined to the source electrode 33 of the first semiconductor element 30U by laser processing (laser welding). According to this structure, for example, compared to the case where the first connecting portion 71A is joined to the source electrode 33 by ultrasonic welding, the load applied to the source electrode 33 is smaller when the first connecting portion 71A is joined to the source electrode 33. Therefore, it is possible to suppress the reduction in the reliability of the first semiconductor element 30U.

[0256] Furthermore, compared to the case where the first connection portion 71A is joined to the source electrode 33 by ultrasonic welding, for example, the contact area between the source electrode 33 of the first semiconductor element 30U and the first connection portion 71A is increased. Therefore, the allowable current from the source electrode 33 of the first semiconductor element 30U to the second drive lead 70 can be increased.

[0257] (1-15) The first connecting portion 61B of the metal plate 60B is joined to the first connecting portion 61A by laser processing (laser welding). According to this structure, when the first connecting portion 61B is joined to the first connecting portion 61A, the load applied to the source electrode 33 of the second semiconductor element 30L through the first connecting portion 61A is small. Therefore, it is possible to suppress the reduction in the reliability of the second semiconductor element 30L.

[0258] Furthermore, compared to the case where the first connecting portion 61B is joined to the first connecting portion 61A by ultrasonic welding, the contact area between the first connecting portion 61A and the first connecting portion 61B is increased. Therefore, current can flow smoothly from the first connecting portion 61A to the first connecting portion 61B.

[0259] The first connecting portion 71B of the metal plate 70B is joined to the first connecting portion 71A by laser processing (laser welding). According to this structure, when the first connecting portion 71B is joined to the first connecting portion 71A, the load applied to the source electrode 33 of the first semiconductor element 30U through the first connecting portion 71A is small. Therefore, it is possible to suppress the reduction in the reliability of the first semiconductor element 30U.

[0260] Furthermore, compared to the case where the first connecting portion 71B is joined to the first connecting portion 71A by ultrasonic welding, the contact area between the first connecting portion 71A and the first connecting portion 71B is increased. Therefore, current can flow smoothly from the first connecting portion 71A to the first connecting portion 71B.

[0261] (1-16) The first connecting portion 61C of the metal plate 60C is joined to the first connecting portion 61B by laser processing (laser welding). According to this structure, when the first connecting portion 61C is joined to the first connecting portion 61B, the load applied to the source electrode 33 of the second semiconductor element 30L through the first connecting portions 61A and 61B is small. Therefore, it is possible to suppress the reduction in the reliability of the second semiconductor element 30L.

[0262] Furthermore, compared to the case where the first connecting portion 61C is joined to the first connecting portion 61B by ultrasonic welding, the contact area between the first connecting portion 61B and the first connecting portion 61C is increased. Therefore, current can flow smoothly from the first connecting portion 61B to the first connecting portion 61C.

[0263] The first connecting portion 71C of the metal plate 70B is joined to the first connecting portion 71B by laser processing (laser welding). According to this structure, when the first connecting portion 71C is joined to the first connecting portion 71B, the load applied to the source electrode 33 of the first semiconductor element 30U through the first connecting portions 71A and 71B is small. Therefore, it is possible to suppress the reduction in reliability of the first semiconductor element 30U.

[0264] Furthermore, compared to the case where the first connecting portion 71C is joined to the first connecting portion 71B by ultrasonic welding, the contact area between the first connecting portion 71B and the first connecting portion 71C is increased. Therefore, current can flow smoothly from the first connecting portion 71B to the first connecting portion 71C.

[0265] (1-17) The second connecting portion 62A of the metal plate 60A is joined to the main surface cs of the extension portion 22c of the input lead 22 by laser processing (laser welding). According to this structure, for example, compared to the case where the second connecting portion 62A is joined to the main surface 22cs of the extension portion 22c by ultrasonic welding, the contact area between the main surface 22cs of the extension portion 22c and the second connecting portion 62A is increased. Therefore, the allowable current from the first drive lead 60 to the input lead 22 can be increased.

[0266] The second connecting portion 72A of the metal plate 70A is joined to the main surface 42sb of the conductive component 42B by laser processing (laser welding). According to this structure, compared to the case where the second connecting portion 72A is joined to the main surface 42sb of the conductive component 42B by ultrasonic welding, the contact area between the main surface 42sb of the conductive component 42B and the second connecting portion 72A is increased. Therefore, the allowable current flow from the second drive lead 70 to the conductive component 42B can be increased.

[0267] (1-18) The second connecting portion 62B of the metal plate 60B is joined to the second connecting portion 62A by laser processing (laser welding). According to this structure, for example, compared to the case where the second connecting portion 62B is joined to the second connecting portion 62A by ultrasonic welding, the contact area between the second connecting portion 62A and the second connecting portion 62B is increased. Therefore, current can flow smoothly from the second connecting portion 62B to the second connecting portion 62A.

[0268] The second connecting portion 72B of the metal plate 70B is joined to the second connecting portion 72A by laser processing (laser welding). According to this structure, compared to the case where the second connecting portion 72B is joined to the second connecting portion 72A by ultrasonic welding, the contact area between the second connecting portion 72A and the second connecting portion 72B is increased. Therefore, current can flow smoothly from the second connecting portion 72B to the second connecting portion 72A.

[0269] (1-19) The second connecting portion 62C of the metal plate 60C is joined to the second connecting portion 62B by laser processing (laser welding). According to this structure, for example, compared to the case where the second connecting portion 62C is joined to the second connecting portion 62B by ultrasonic welding, the contact area between the second connecting portion 62B and the second connecting portion 62C is increased. Therefore, current can flow smoothly from the second connecting portion 62C to the second connecting portion 62B.

[0270] The second connecting portion 72C of the metal plate 70B is joined to the second connecting portion 72B by laser processing (laser welding). According to this structure, compared to the case where the second connecting portion 72C is joined to the second connecting portion 72B by ultrasonic welding, the contact area between the second connecting portion 72B and the second connecting portion 72C is increased. Therefore, current can flow smoothly from the second connecting portion 72C to the second connecting portion 72B.

[0271] (1-20) Detection layers 45A and 45B are disposed in the lateral direction X closer to the semiconductor element 30 than the gate layers 44A and 44B. According to this structure, since the distance between the source electrode 33 of the semiconductor element 30 and the detection layers 45A and 45B can be shortened, the first detection wire 55 and the second detection wire 56 can be shortened respectively. Therefore, the inductance caused by the first detection wire 55 and the second detection wire 56 can be reduced.

[0272] [Second Implementation]

[0273] Reference Figures 30-32 The semiconductor device 1B of the second embodiment will be described. In this embodiment, compared with the semiconductor device 1A of the first embodiment, the structure of the input lead 22 and the first driving lead 60 are different. In the following description, the same symbols are used for the constituent elements common to the semiconductor device 1A of the first embodiment, and their descriptions are omitted.

[0274] like Figure 30 as well as Figure 31 As shown, the input lead 22 is the same as in the first embodiment, having a pad portion 22a, a terminal portion 22b, multiple extension portions 22c, a connecting portion 22d, and an intermediate portion 22e. Compared with the input lead 22 of the first embodiment, the input lead 22 of this embodiment differs in the shape of the multiple extension portions 22c.

[0275] like Figure 32 As shown in (a), multiple extensions 22c extend in the transverse direction X toward the second semiconductor element 30L beyond the support 29. Each extension 22c, viewed from the thickness direction Z, is formed to coincide with the source electrode 33 of the second semiconductor element 30L. Figure 32As shown in (b), each extension 22c has a connecting portion 22g extending in the thickness direction Z at its front end opposite the second semiconductor element 30L. The connecting portion 22g is integrally formed with each extension 22c. The connecting portion 22g eliminates the height difference between the extension 22c and the second semiconductor element 30L in the thickness direction Z. The connecting portion 22g is connected to the source electrode 33 of the second semiconductor element 30L. Thus, since the input lead 22 is directly connected to the second semiconductor element 30L, the first drive lead 60 is not required. Furthermore, the connecting portion 22g can be formed as a separate entity from the extension 22c.

[0276] In the manufacturing method of semiconductor device 1B of this embodiment, compared with the manufacturing method of semiconductor device 1A of the first embodiment, the bonding method of input lead 22 in the first bonding process and the omitting of the bonding process of source electrode 33 and extension portion 22c of second semiconductor element 30L by first drive lead 60 in the third bonding process are different.

[0277] In the first bonding process, firstly, the input lead 21 is bonded to the main surface 42sa of the conductive member 42A. Examples of bonding methods include ultrasonic welding and laser welding. Next, an insulating member 28 is mounted on the input lead 21. Then, the input lead 22 is mounted on the insulating member 28. Thus, the insulating member 28 is held between the input lead 21 and the input lead 22 in the thickness direction Z. Furthermore, multiple extensions 22c of the input lead 22 are respectively mounted on the support base 29. Additionally, a connecting portion 22g provided at the front end of each extension 22c is mounted on the source electrode 33 of the second semiconductor element 30L. And, for example, the connecting portion 22g is bonded to the source electrode 33 by ultrasonic welding. Furthermore, if the connecting portion 22g and the extension 22c are formed as separate entities, for example, after the connecting portion 22g is bonded to the source electrode 33 of the second semiconductor element 30L, the connecting portion 22g is bonded to the extension 22c. Furthermore, the order of this bonding can be arbitrarily changed. After the connecting portion 22g is joined to the extension portion 22c, the connecting portion 22g can be joined to the source electrode 33.

[0278] In addition to the effects of the first embodiment, the semiconductor device 1B according to this embodiment also has the following effects.

[0279] (2-1) Since the multiple extensions 22c of the input lead 22 are directly bonded to the source electrode 33 of the second semiconductor element 30L, that is, since the first drive lead 60 is omitted, the number of components in the semiconductor device 1B is reduced. In addition, since the time required for bonding the extensions 22c to the source electrode 33 of the second semiconductor element 30L is less than the time required for bonding the first drive lead 60 to the source electrode 33 of the second semiconductor element 30L, the time required for the third bonding process can be reduced.

[0280] [Third Implementation Method]

[0281] Reference Figure 33 The semiconductor device 1C according to the third embodiment will be described. In the semiconductor device 1C of this embodiment, the shape of the sealing resin 10 is different from that of the semiconductor device 1A of the first embodiment. In the following description, the same reference numerals are used to denote the same constituent elements as those in the semiconductor device 1A, and there are cases where their descriptions are omitted.

[0282] like Figure 33 As shown, compared to the sealing resin 10 of the first embodiment, the sealing resin 10C of this embodiment extends from both ends in the longitudinal direction Y to the transverse direction X. The length LX1 of the sealing resin 10C in the transverse direction X is longer than the length LX2 of the front end of the connecting insulating member 28 and the front end of the output lead 23 in the transverse direction X. Thus, the sealing resin 10C covers the terminal portion 21b of the input lead 21. Figure 33 It is configured in such a way that a portion of the input lead 22 terminal 22b and a portion of the insulating member 28 are omitted from the figure.

[0283] A first recess 19A is provided on the sealing resin 10C, exposing a portion of the input leads 21 and 22 and a portion of the insulating component 28, and a second recess 19B is provided, exposing a portion of the output lead 23. The first recess 19A and the second recess 19B are formed such that they penetrate the sealing resin 10C in the thickness direction Z. The portion of the first recess 19A provided in the sealing resin 10C on the first resin side 11 side is recessed from the first resin side 11 to the second resin side 12 in the transverse direction X. The portion of the second recess 19B provided in the sealing resin 10C on the second resin side 12 side is recessed from the second resin side 12 to the first resin side 11 in the transverse direction X.

[0284] According to this embodiment, in addition to the effects of the first embodiment, the following effects can also be obtained.

[0285] (3-1) By covering a portion of the terminal portion 21b of the input lead 21, a portion of the terminal portion 22b of the input lead 22, and a portion of the insulating member 28 with the sealing resin 10C, the terminal portions 21b and 22b and the insulating member 28 protruding from the sealing resin 10 of the semiconductor device 1A can be protected.

[0286] [Fourth Implementation Method]

[0287] Reference Figure 34 as well as Figure 35 The semiconductor device 1D according to the fourth embodiment will be described. In this embodiment, the structure of the support substrate differs from that of the semiconductor device 1A in the first embodiment. In the following description, the same symbols are used for the same constituent elements as in the semiconductor device 1A, and some descriptions may be omitted.

[0288] The support substrate 40D in this embodiment is, for example, a structure called a DBC (Direct Bonded Copper) substrate. Alternatively, a structure called a DBA (Direct Bonded Aluminum) substrate can be used instead of a DBC. At least a portion of the support substrate 40D is covered by a sealing resin 10 (not shown). The support substrate 40D includes an insulating substrate 46, a main surface metal layer 47, and a back surface metal layer 48.

[0289] The insulating substrate 46 is electrically insulating. The insulating substrate 46 is made of the same material as the insulating substrate 41, which is ceramic. Furthermore, the insulating substrate 46 can be made of a thin sheet of insulating resin. The insulating substrate 46 is covered by a sealing resin 10 (not shown). The insulating substrate 46 has a main substrate surface 46a and a back substrate surface 46b that face opposite sides in the thickness direction Z.

[0290] The main surface metal layer 47 is formed to cover a portion of the main surface 46a of the substrate. The main surface metal layer 47 is made of copper. Furthermore, if the supporting substrate 40D is a DBA, the main surface metal layer 47 is made of aluminum. The main surface metal layer 47 is covered by a sealing resin 10 (not shown). The main surface metal layer 47 is patterned, for example, by etching, including a plurality of mutually spaced patterned electrodes 47A to 47E.

[0291] The patterned electrode 47A, viewed from above, is L-shaped. Multiple first semiconductor elements 30U are bonded to the patterned electrode 47A via a conductive process such as silver paste. The patterned electrode 47A is connected to the drain electrode 35, which serves as the back-side electrode of each first semiconductor element 30U. A P-terminal (corresponding to the input lead 21) (not shown) is connected to the patterned electrode 47A. A portion of this P-terminal is exposed by the sealing resin 10 (not shown).

[0292] The patterned electrode 47B, viewed from above, is L-shaped. It is arranged adjacent to the patterned electrode 47A in the longitudinal direction Y. The orientation of the L-shape of the patterned electrode 47B is opposite to that of the L-shape of the patterned electrode 47A. Multiple second semiconductor elements 30L are bonded to the patterned electrode 47B via a conductive connection, such as silver paste. The patterned electrode 47B is connected to the drain electrode 35, which serves as the back-side electrode of each second semiconductor element 30L. An output terminal (corresponding to output lead 23) (not shown) is connected to the patterned electrode 47B. A portion of this output terminal is exposed by the sealing resin 10 (not shown).

[0293] The patterned electrode 47C, viewed from above, is roughly T-shaped. It is positioned opposite to and adjacent to the patterned electrode 47B in the longitudinal direction Y, as opposed to the patterned electrode 47A. An N-terminal (corresponding to input lead 22) (not shown) is connected to the patterned electrode 47C. A portion of this N-terminal is exposed from the sealing resin 10 (not shown).

[0294] A pair of patterned electrodes 47D are disposed at both ends of the support substrate 40D in the longitudinal direction Y. Viewed from above, each patterned electrode 47D is shaped as a generally straight line extending in the transverse direction X. One patterned electrode 47D is positioned in the longitudinal direction Y, opposite to patterned electrode 47B and adjacent to patterned electrode 47A. The other patterned electrode 47D is positioned in the longitudinal direction Y, opposite to patterned electrode 47B and adjacent to patterned electrode 47C. One patterned electrode 47D is connected to the gate electrode 34 of each first semiconductor element 30U via a first control wire (not shown). The other patterned electrode 47D is connected to the gate electrode 34 of each second semiconductor element 30L via a second control wire (not shown). Gate terminals (not shown) (corresponding to control leads 24A and 24B) are connected to the pair of patterned electrodes 47D respectively. A portion of the gate terminal is exposed from the sealing resin 10 (not shown).

[0295] A pair of patterned electrodes 47E are disposed at both ends of the support substrate 40D in the longitudinal direction Y. Viewed from above, each patterned electrode 47E is a straight line extending in the transverse direction X. One patterned electrode 47E is positioned in the longitudinal direction Y such that it is opposite to and adjacent to patterned electrode 47A relative to patterned electrode 47D. The other patterned electrode 47E is positioned in the longitudinal direction Y such that it is opposite to and adjacent to patterned electrode 47C relative to another patterned electrode 47D. One patterned electrode 47E is connected to the source electrode 33 of each first semiconductor element 30U via a first detection wire (not shown). The other patterned electrode 47E is connected to the source electrode 33 of each second semiconductor element 30L via a second detection wire (not shown). Detection terminals (not shown) (corresponding to detection leads 25A and 25B) are connected to the pair of patterned electrodes 47E respectively. A portion of the detection terminals is exposed from the sealing resin 10 (not shown).

[0296] The back metal layer 48 is formed in such a way that it covers at least a portion of the back surface 46b of the insulating substrate 46. The back metal layer 48 is made of copper. Furthermore, when the supporting substrate 40D is DBA, the back metal layer 48 is made of aluminum. The back metal layer 48 can be covered by a sealing resin 10 (not shown), or it can be exposed from the sealing resin 10 on its surface facing the thickness direction Z.

[0297] The semiconductor device 1D includes a plurality of first driving leads 80 and a plurality of second driving leads 90. The first driving leads 80 connect the source electrode 33 and the pattern electrode 47B of the first semiconductor element 30U. Therefore, the pattern electrode 47B is an example of a driving conductor. The number of first driving leads 80 is determined according to the number of first semiconductor elements 30U. The second driving leads 90 connect the source electrode 33 and the pattern electrode 47C of the second semiconductor element 30L. Therefore, the pattern electrode 47C is an example of a driving conductor. The number of second driving leads 90 is determined according to the number of second semiconductor elements 30L.

[0298] like Figure 34 as well as Figure 35As shown, the structures of the first driving lead 80 and the second driving lead 90 are the same as those of the first driving lead 60 and the second driving lead 70 in the first embodiment. Specifically, the first driving lead 80 is constructed by stacking metal plates 80A, 80B, and 80C in the thickness direction Z, and has a first connecting portion 81, a second connecting portion 82, and a connecting portion 83. The second driving lead 90 is constructed by stacking metal plates 90A, 90B, and 90C in the thickness direction Z, and has a first connecting portion 91, a second connecting portion 92, and a connecting portion 93. Furthermore, in this embodiment, in a side view viewed from the transverse direction X, the shapes of the first driving lead 80 and the second driving lead 90 are identical. Moreover, the shapes of the first driving lead 80 and the second driving lead 90 in the side view can be arbitrarily changed. For example, the shapes of the first driving lead 80 and the second driving lead 90 in the side view can be different.

[0299] The first connection portion 81 of the first drive lead 80 is joined to the source electrode 33 of the first semiconductor element 30U by laser welding. The joining structure of the first connection portion 81 with the source electrode 33 of the first semiconductor element 30U is the same as the joining structure of the first connection portion 71 of the second drive lead 70 with the source electrode 33 of the second semiconductor element 30L. In addition, the joining structure of the metal plates 80A and 80B in the first connection portion 81 by laser welding is the same as the joining structure of the metal plates 70A and 70B in the first connection portion 71 by laser welding, and the joining structure of the metal plates 70B and 70C in the first connection portion 71 by laser welding.

[0300] The second connection portion 82 of the first driving lead 80 is joined to the patterned electrode 47B by laser welding. The joining structure of the second connection portion 82 with the patterned electrode 47B is the same as the joining structure of the second connection portion 72 of the second driving lead 70 with the conductive component 42B. In addition, the joining structure of metal plates 80A and 80B by laser welding, and the joining structure of metal plates 80B and 80C by laser welding in the second connection portion 82 are the same as the joining structure of metal plates 70A and 70B by laser welding, and the joining structure of metal plates 70B and 70C by laser welding in the second connection portion 72.

[0301] The shape of the connecting portion 83 of the first drive lead 80 in the side view of the first drive lead 80 viewed from the horizontal direction X is the same as the shape of the connecting portion 73 of the second drive lead 70 in the side view of the second drive lead 70 viewed from the longitudinal direction Y.

[0302] The first connection portion 91 of the second driving lead 90 is joined to the source electrode 33 of the second semiconductor element 30L by laser welding. The joining structure of the first connection portion 91 with the source electrode 33 of the second semiconductor element 30L is the same as the joining structure of the first connection portion 81 of the first driving lead 80 with the source electrode 33 of the first semiconductor element 30U. In addition, the joining structure of metal plates 90A and 90B by laser welding, and the joining structure of metal plates 90B and 90C by laser welding in the first connection portion 91 are the same as the joining structure of metal plates 80A and 80B by laser welding, and the joining structure of metal plates 80B and 80C by laser welding in the first connection portion 81.

[0303] The second connection portion 92 of the second drive lead 90 is joined to the pattern electrode 47C by laser welding. The joining structure of the second connection portion 92 with the pattern electrode 47C is the same as the joining structure of the second connection portion 82 of the first drive lead 80 with the pattern electrode 47B. In addition, the joining structure of metal plates 90A and 90B by laser welding, and the connection structure of metal plates 90B and 90C by laser welding in the second connection portion 92 are the same as the joining structure of metal plates 80A and 80B by laser welding, and the joining structure of metal plates 80B and 80C by laser welding in the second connection portion 82.

[0304] The shape of the connecting portion 93 of the second drive lead 90 viewed from the side in the horizontal direction X is the same as the shape of the connecting portion 83 of the first drive lead 80 viewed from the side in the horizontal direction X. Furthermore, the semiconductor device 1D according to this embodiment can achieve the same effects as the first embodiment.

[0305] Furthermore, metal plates 80A and 90A are examples of first metal plates respectively connected to semiconductor elements; first connecting portions 81A and 91A are examples of first element-side connecting portions of the first metal plates; second connecting portions 82A and 92A are examples of first conductor-side connecting portions of the first metal plates; and connecting portions 83A and 93A are examples of first connecting portions. Laser bonding portions formed on the first connecting portions 81A and 91A are examples of first element-side bonding portions of the first element-side connecting portions; and laser bonding portions formed on the second connecting portions 82A and 92A are examples of first conductor-side bonding portions of the first semiconductor-side connecting portions.

[0306] Metal plates 80B and 90B are examples of second metal plates stacked on the first metal plate. First connecting portions 81B and 91B are examples of second element-side connecting portions connected to the first element-side connecting portion. Second connecting portions 82B and 92B are examples of second conductor-side connecting portions of the second metal plate. Connecting portions 83B and 93B are examples of second connecting portions. Laser-bonded portions formed on the first connecting portions 81B and 91B are examples of second element-side bonding portions of the second element-side connecting portion. Laser-bonded portions formed on the second connecting portions 82B and 92B are examples of second conductor-side bonding portions of the second conductor-side connecting portion.

[0307] Metal plates 80C and 90C are examples of third metal plates stacked on the second metal plate. First connecting portions 81C and 91C are examples of third element-side connecting portions of the third metal plate. Second connecting portions 82C and 92C are examples of third conductor-side connecting portions of the third metal plate. Connecting portions 83C and 93C are examples of third connecting portions. Laser-bonded portions formed on the first connecting portions 81C and 91C are examples of third element-side bonding portions of the third element-side connecting portions, and laser-bonded portions formed on the second connecting portions 82C and 92C are examples of third conductor-side bonding portions of the third conductor-side connecting portions.

[0308] In the manufacturing method of the semiconductor device 1D of this embodiment, the third bonding step is different from the third bonding step of the semiconductor device 1A of the first embodiment. In the third bonding step of the manufacturing method of the semiconductor device 1D, after bonding the metal plate 80A to the source electrode 33 and pattern electrode 47B of the first semiconductor element 30U, the metal plate 90A is bonded to the source electrode 33 and pattern electrode 47C of the second semiconductor element 30L. Next, after bonding the metal plate 80B to the metal plate 80A, the metal plate 90B is bonded to the metal plate 90A. Finally, after bonding the metal plate 80C to the metal plate 80B, the metal plate 90C is bonded to the metal plate 90B. In this embodiment, by repeating the above steps three times, three first driving leads 80 and two driving leads 90 are formed. Furthermore, the third bonding step of the manufacturing method of the semiconductor device 1D of this embodiment can be the same as the third bonding step of the manufacturing method of the semiconductor device 1A of the first embodiment.

[0309] [Fifth Implementation]

[0310] Reference Figure 36 as well as Figure 37The semiconductor device 1E according to the fifth embodiment will be described. In this embodiment, the semiconductor device 1E differs from the semiconductor device 1A of the first embodiment in that it includes a discrete semiconductor with a semiconductor element 30. Furthermore, in this embodiment, the semiconductor element 30 is not limited to a switching element such as a MOSFET, but can be various semiconductor elements such as a diode. In the following description, the same reference numerals are used for the same constituent elements as in semiconductor device 1A, and some descriptions may be omitted. For convenience, in… Figure 36 In the middle, the sealant 10E is indicated by a double-dotted line.

[0311] The semiconductor device 1E of this embodiment includes a leadframe 100, also known as a leadframe structure. The material of the leadframe 100 is not particularly limited, and for example, it can be copper or a copper alloy. The leadframe 100 has a chip pad portion 110 and a plurality of terminal portions 120.

[0312] like Figure 36 as well as Figure 37 As shown, the chip pad 110 is the portion on which the semiconductor element 30 is mounted. In this embodiment, a semiconductor element 30 is mounted on the chip pad 110. The semiconductor element 30 is bonded to the chip pad 110, for example, by silver paste. The drain electrode 35, which serves as the back-side electrode of the semiconductor element 30, is connected to the chip pad 110. The semiconductor element 30 in this embodiment also has a detection electrode 37 formed on the main surface 31 of the element. In one example, the detection electrode 37 is formed in the region surrounded by the gate electrode 34 and the source electrode 33.

[0313] The plurality of terminal portions 120 include a drive terminal portion 120A, a control terminal portion 120B, and a detection terminal portion 120C. The drive terminal portion 120A is a terminal through which the source electrode current of the semiconductor element 30 flows. The control terminal portion 120B is a terminal for applying a gate voltage to the gate electrode 34 of the semiconductor element 30. The detection terminal portion 120C is, for example, a terminal for detecting the temperature of the semiconductor element 30.

[0314] The drive terminal portion 120A includes a pad portion 121 and a plurality of terminal portions 122. In this embodiment, the drive terminal portion 120A is a single component integrally formed with the pad portion 121 and the plurality of terminal portions 122. The shape of the pad portion 121, viewed from above, is approximately rectangular in the horizontal direction X (long side direction) and the vertical direction Y (short side direction). In the thickness direction Z, the pad portion 121 is disposed on the resin top surface 15 side of the sealing resin 10, which is closer to the chip pad portion 110. Furthermore, the pad portion 121 is disposed on the side of the source electrode 33 of the semiconductor element 30, which is closer to the resin top surface 15 of the sealing resin 10. The plurality of terminal portions 122 are arranged at equal intervals in the horizontal direction X.

[0315] The control terminal portion 120B includes a pad portion 123 and a terminal portion 124. In this embodiment, the control terminal portion 120B is a single component in which the pad portion 123 and the terminal portion 124 are integrally formed. The pad portion 123 is arranged with a gap in the transverse direction X, aligned with the pad portion 121 of the drive terminal portion 120A in the thickness direction Z. The control terminal portion 120B is connected to the gate electrode 34 via a control wire 131. The control wire 131 is connected to the pad portion 123 of the control terminal portion 120B and the gate electrode 34, respectively, for example, via lead bonding.

[0316] The detection terminal portion 120C includes a pad portion 125 and a terminal portion 126. In this embodiment, the detection terminal portion 120C is a single component in which the pad portion 125 and the terminal portion 126 are integrally formed. The pad portion 125 is arranged with a gap in the transverse direction X, aligned with the pad portion 123 of the control terminal portion 120B in the thickness direction Z. In this embodiment, the shape of the detection terminal portion 120C is the same as the shape of the control terminal portion 120B. The detection terminal portion 120C is connected to the detection electrode 37 via a detection wire 132. The detection wire 132 is connected to the pad portion 125 of the detection terminal portion 120C and the detection electrode 37, respectively, for example, by lead bonding.

[0317] The sealing resin 10E seals a portion of the chip pad 110, the semiconductor element 30, portions of each terminal portion 120, the control wire 131, and the detection wire 132. The sealing resin 10E uses the same material as the sealing resin 10 constituting the first embodiment. In one example, the material constituting the sealing resin 10E is a black epoxy resin.

[0318] like Figure 37 As shown, the back surface 111 of the chip pad portion 110 is exposed from the sealing resin 10E. In addition, the terminal portion 122 of the drive terminal portion 120A, the terminal portion 124 of the control terminal portion 120B, and the terminal portion 126 of the detection terminal portion 120C protrude from the sealing resin 10E in the longitudinal direction Y.

[0319] The semiconductor device 1E includes a drive lead 140. The drive lead 140 connects the drive terminal portion 120A and the source electrode 33. Therefore, the drive terminal portion 120A is an example of a drive conductor. The drive lead 140 is sealed with a sealing resin 10E.

[0320] like Figure 37 As shown, the structure of the drive lead 140 is the same as that of the second drive lead 70 in the first embodiment. That is, the drive lead 140 is constructed by stacking metal plates 140A, 140B, and 140C in the thickness direction Z, and has a first connecting portion 141, a second connecting portion 142, and a connecting portion 143.

[0321] The first connection portion 141 of the drive lead 140 is joined to the source electrode 33 of the semiconductor element 30 by laser welding. The joining structure of the first connection portion 141 to the source electrode 33 of the semiconductor element 30 is the same as the joining structure of the first connection portion 71 of the second drive lead 70 to the source electrode 33 of the second semiconductor element 30L. In addition, the joining structure of metal plates 140A and 140B by laser welding, and the joining structure of metal plates 140B and 140C by laser welding in the first connection portion 141 are the same as the joining structure of metal plates 70A and 70B by laser welding, and the joining structure of metal plates 70B and 70C by laser welding in the first connection portion 71.

[0322] The second connection portion 142 of the drive lead 140 is joined to the pad portion 121 of the drive terminal portion 120A by laser welding. The joining structure of the second connection portion 142 with the pad portion 121 is the same as the joining structure of the second connection portion 72 of the second drive lead 70 with the conductive member 42B. In addition, the joining structure of the metal plates 140A and 140B by laser welding, and the joining structure of the metal plates 140B and 140C by laser welding in the second connection portion 142 are the same as the joining structure of the metal plates 70A and 70B by laser welding, and the joining structure of the metal plates 70B and 70C by laser welding in the second connection portion 72.

[0323] The shape of the connecting portion 143 of the drive lead 140 in a side view taken from the horizontal direction is approximately the same as the shape of the connecting portion 73 of the second drive lead 70 in a side view taken from the vertical direction Y. Furthermore, the semiconductor device 1E according to this embodiment can achieve the same effects as the semiconductor device 1A of the first embodiment.

[0324] Furthermore, metal plate 140A is an example of a first metal plate connected to a semiconductor element; first connecting portion 141 of metal plate 140A is an example of a first element-side connecting portion of the first metal plate; second connecting portion 142 of metal plate 140A is an example of a first conductor-side connecting portion of the first metal plate; and connecting portion 143 of metal plate 140A is an example of a first connecting portion. The laser bonding portion formed on the first connecting portion 141 of metal plate 140A is an example of a first element-side bonding portion of the first element-side connecting portion; and the laser bonding portion formed on the second connecting portion 142 of metal plate 140A is an example of a first conductor-side bonding portion of the first conductor-side connecting portion.

[0325] Metal plate 140B is an example of a second metal plate stacked on a first metal plate. The first connecting portion 141 of metal plate 140B is an example of a second element-side connecting portion connected to the first element-side connecting portion. The second connecting portion 142 of metal plate 140B is an example of a second conductor-side connecting portion of the second metal plate. The connecting portion 143 of metal plate 140B is an example of a second connecting portion. The laser-bonded portion formed on the first connecting portion 141 of metal plate 140B is an example of a second element-side bonding portion of the second element-side connecting portion. The laser-bonded portion formed on the second connecting portion 142 of metal plate 140B is an example of a second conductor-side bonding portion of the second conductor-side connecting portion.

[0326] Metal plate 140C is an example of a third metal plate stacked on a second metal plate. The first connecting portion 141 of metal plate 140C is an example of a third element-side connecting portion of the third metal plate. The second connecting portion 142 of metal plate 140C is an example of a third conductor-side connecting portion of the third metal plate. The connecting portion 143 of metal plate 140C is an example of a third connecting portion. The laser-bonded portion formed on the first connecting portion 141 of metal plate 140C is an example of a third element-side bonding portion of the third element-side connecting portion. The laser-bonded portion formed on the second connecting portion 142 of metal plate 140C is an example of a third conductor-side bonding portion of the third conductor-side connecting portion.

[0327] [Common variations in all implementation methods]

[0328] The above embodiments are illustrative of ways to obtain the semiconductor device and the method of manufacturing the semiconductor device of this disclosure, and are not intended to limit the methods. The semiconductor device and the method of manufacturing the semiconductor device of this disclosure are obtained in ways different from those exemplified in the above embodiments. One example is a method of replacing or modifying a part of the structure of the above embodiments, or adding a new structure to the above embodiments. In the following modification examples, the parts common to the above embodiments are marked with the same symbols as in the above embodiments, and their descriptions are omitted.

[0329] In the above embodiments, the number of driving leads (first driving leads 60, 80, second driving leads 70, 90, and driving leads 40) bonded to the source electrode 33 of the semiconductor element 30 can be arbitrarily changed. For example, if a semiconductor element 30 with a larger size than the semiconductor element 30 of the first embodiment is used, and on the other hand, the driving leads are formed by a strip material 230 with the same size as the strip material 230 of the first embodiment, multiple driving leads (multiple driving connection members) can be connected to the source electrode 33 of the semiconductor element 30. In this case, the multiple driving leads (multiple driving connection members) are arranged in a longitudinal direction Y. As an example, in Figure 38The example shows a structure in which two second driving leads 70 are connected to the source electrode 33 of the second semiconductor element 30L.

[0330] like Figure 38 As shown, the first connection portions 71 of two second drive leads 70 are laser-welded onto the source electrode 33. The bonding structure of each first connection portion 71 to the source electrode 33 is the same as the bonding structure of the first connection portion 71 of the second drive lead 70 to the source electrode 33 in the first embodiment. Furthermore, Figure 38 The laser-welded joining structure of the metal plates 70A and 70B of each first connecting portion 71, and the laser-welded joining structure of the metal plates 70B and 70C of each first connecting portion 71, are the same as the laser-welded joining structure of the metal plates 70A and 70B of the first connecting portion 71 of the second driving lead in the first embodiment, and the laser-welded joining structure of the metal plates 70B and 70C of each second driving lead. According to this structure, since two second driving leads 70 are formed using a common strip material 230, the third joining process can be simplified compared to the case where two second driving leads 70 are formed using different individual strip materials.

[0331] In the above embodiments, the size of the longitudinal direction Y of the laser junction in the first connecting portion and the second connecting portion of the driving leads (first driving leads 60, 80, second driving leads 70, 90 and driving leads 140) can be arbitrarily changed.

[0332] In the above embodiments, the leading edge edges of the plurality of metal plates constituting the first connecting portion of the drive leads (first drive leads 60, 80, second drive leads 70, 90, and drive leads 140) can be aligned when viewed from the thickness direction Z. Furthermore, the leading edge edges of the plurality of metal plates constituting the second connecting portion of the drive leads (first drive leads 60, 80, second drive leads 70, 90, and drive leads 140) can be aligned when viewed from the thickness direction Z.

[0333] In the above embodiments, the lead supply unit 210 and the laser irradiation unit 220 can be configured as separate entities. In this case, the lead supply unit 210 and the laser irradiation unit 220 can move independently. Therefore, the degree of freedom in the top view of the shape of the laser joint formed by the laser irradiation unit 220 can be increased.

[0334] In the above embodiments, the shape of the laser junction in plan view of the driving leads (first driving leads 60, 80, second driving leads 70, 90, and driving lead 140) can be arbitrarily changed. Here, for example, the shape of the laser junction will be described using the second connecting portion 62 of the first driving lead 60.

[0335] (A) such as Figure 39A As shown, the laser-bonded portion 65X formed on the second connecting portion 62A of metal plate 60A, the laser-bonded portion 65Y formed on the second connecting portion 62B of metal plate 60B, and the laser-bonded portion 65Z formed on the second connecting portion 62C of metal plate 60C are concentric circles formed by laser welding. The diameter of laser-bonded portion 65X is larger than the diameters of laser-bonded portions 65Y and 65Z. The diameter of laser-bonded portion 65Y is larger than the diameter of laser-bonded portion 65Z.

[0336] like Figure 39B As shown, the laser-bonded portion 65X of the second connecting portion 62A of the metal plate 60A, when viewed from the thickness direction Z, is offset from the laser-bonded portion 65Y of the second connecting portion 62B of the metal plate 60B. The laser-bonded portion 65Y, when viewed from the thickness direction Z, is offset from the laser-bonded portion 65Z of the second connecting portion 62C of the metal plate 60C.

[0337] Furthermore, the diameters of the laser-joined portion 65X, the laser-joined portion 65Y, and the laser-joined portion 65Z can be arbitrarily changed. In one example, the diameter of the laser-joined portion 65Z can be larger than the diameter of the laser-joined portion 65Y.

[0338] Furthermore, the number of laser-joined portions formed in each of the second connecting portions 62A can be arbitrarily changed. In one example, a laser-joined portion concentric with the laser-joined portion 65X and having the same diameter as the laser-joined portion 65Z can be added to the second connecting portion 62A. Alternatively, the diameter of the laser-joined portion 65X in the second connecting portion 62A can be changed to be the same as the diameter of the laser-joined portion 65Z. In these cases, when viewed from the thickness direction Z, the laser-joined portion 65X coincides with the laser-joined portion 65Z.

[0339] (B) such as Figure 40AAs shown, the laser-bonded portion 65X formed on the second connecting portion 62A of metal plate 60A, the laser-bonded portion 65Y formed on the second connecting portion 62B of metal plate 60B, and the laser-bonded portion 65Z formed on the second connecting portion 62C of metal plate 60C are formed into similar rectangular frames by laser welding. The lateral X and longitudinal Y dimensions of laser-bonded portion 65X are larger than those of laser-bonded portion 65Y and laser-bonded portion 65Z, respectively. The lateral X and longitudinal Y dimensions of laser-bonded portion 65Y are larger than those of laser-bonded portion 65Z. Therefore, in top view, laser-bonded portion 65X is formed to surround the laser-bonded portions 65Y and 65Z. In top view, laser-bonded portion 65Y is formed to surround the laser-bonded portion 65Z.

[0340] like Figure 40B As shown, the laser-bonded portion 65X of the second connecting portion 62A of the metal plate 60A, when viewed from the thickness direction Z, is offset from the laser-bonded portion 65Y of the second connecting portion 62B of the metal plate 60B. Similarly, the laser-bonded portion 65Y, when viewed from the thickness direction Z, is offset from the laser-bonded portion 65Z of the second connecting portion 62C of the metal plate 60C.

[0341] Furthermore, the dimensions of the laser junction 65X in the horizontal direction (X) and the vertical direction (Y) can be arbitrarily changed. Similarly, the dimensions of the laser junction 65Y in the horizontal direction (X) and the vertical direction (Y) can be arbitrarily changed. Additionally, the dimensions of the laser junction 65Z in the horizontal direction (X) and the vertical direction (Y) can be arbitrarily changed. In one example, the dimensions of the laser junction 65Z in the horizontal direction (X) and the vertical direction (Y) can be larger than those of the laser junction 65Y. In this case, in top view, the laser junction 65Z is formed to surround the laser junction 65Y.

[0342] Furthermore, the number of laser-bonded portions formed in each of the second connecting portions 62A can be arbitrarily changed. In one example, a laser-bonded portion with the same size in the transverse X and longitudinal Y directions as the laser-bonded portion 65Z can be added to the second connecting portion 62A. This laser-bonded portion is formed to coincide with the laser-bonded portion 65X when viewed from the thickness direction Z. Alternatively, a laser-bonded portion with the same size in the transverse X and longitudinal Y directions as the laser-bonded portion 65Z can be formed as the laser-bonded portion 65X in the second connecting portion 62A. In these cases, the laser-bonded portion 65X coincides with the laser-bonded portion 65Z when viewed from the thickness direction Z.

[0343] (C) As shown in Figure 41(A), the laser-bonded portion 65X formed on the second connecting portion 62A of the metal plate 60A, the laser-bonded portion 65Y formed on the second connecting portion 62B of the metal plate 60B, and the laser-bonded portion 65Z formed on the second connecting portion 62C of the metal plate 60C extend in the transverse direction X, respectively.

[0344] like Figure 41B As shown, three laser-joined portions 65X are formed on the second connecting portion 62A. Two laser-joined portions 65Y are formed on the second connecting portion 62B. One laser-joined portion 65Z is formed on the second connecting portion 62C. Viewed from the thickness direction Z, the three laser-joined portions 65X are offset from each other, not coinciding with the two laser-joined portions 65Y. Viewed from the thickness direction Z, the two laser-joined portions 65Y are offset from each other, not coinciding with the laser-joined portion 65Z. Viewed from the thickness direction Z, the laser-joined portion 65Z coincides with the central laser-joined portion 65X in the longitudinal direction Y of the three laser-joined portions 65X.

[0345] like Figure 41A as well as Figure 41C As shown, the size of the transverse direction X of the laser-bonded portion 65Z is smaller than the size of the transverse direction X of the laser-bonded portion 65X. Furthermore, the size of the transverse direction X of the laser-bonded portion 65Z is smaller than the size of the transverse direction X of the laser-bonded portion 65Y. Additionally, the size of the transverse direction X of the laser-bonded portion 65Y is equal to the size of the transverse direction X of the laser-bonded portion 65X. Here, if the difference between the size of the transverse direction X of the laser-bonded portion 65Y and the size of the transverse direction X of the laser-bonded portion 65X is, for example, within 5% of the size of the transverse direction X of the laser-bonded portion 65X, it can be said that the size of the transverse direction X of the laser-bonded portion 65Y is equal to the size of the transverse direction X of the laser-bonded portion 65X.

[0346] Furthermore, the size of the transverse direction X of the three laser-jointed portions 65X can be arbitrarily changed. Additionally, the size of the transverse direction X of the two laser-jointed portions 65Y can be arbitrarily changed. Furthermore, the size of the transverse direction X of the laser-jointed portion 65Z can be arbitrarily changed. In one example, the size of the transverse direction X of the laser-jointed portion 65Z can be larger than the size of the transverse direction X of the laser-jointed portion 65Y. Furthermore, the size of the transverse direction X of the laser-jointed portion 65Y can be different from each other. Furthermore, the size of the transverse direction X of the three laser-jointed portions 65X can be different from each other.

[0347] Furthermore, the number of laser-jointed portions 65X, 65Y, and 65Z can be arbitrarily changed. In one example, the laser-jointed portion 65X at the center of the transverse direction X of the three laser-jointed portions 65X can be omitted. In another example, the number of laser-jointed portions 65Z can be the same as the number of laser-jointed portions 65X. In this case, for example, when viewed from the thickness direction Z, the laser-jointed portions 65Z coincide with the laser-jointed portions 65X. Thus, each laser-jointed portion 65Z is offset from the two laser-jointed portions 65Y when viewed from the thickness direction Z.

[0348] In the above embodiments, the shape of the connecting portion of the drive leads (first drive leads 60, 80, second drive leads 70, 90, and drive lead 140) can be arbitrarily changed. In one example, the shape of the connecting portion of the drive lead in a side view can be curved. Figure 42 The following is an example of the structure of the second drive lead 70 in a modified example. The connecting portion 73 of the second drive lead 70 is bent such that its central portion in the transverse direction X is furthest from the support substrate 40 in the thickness direction Z. The connecting portion 73 gradually moves away from the support substrate 40 in the thickness direction Z as it moves toward its central portion in the transverse direction X.

[0349] In the above embodiments, regarding each metal plate constituting the drive leads (first drive leads 60, 80, second drive leads 70, 90, and drive lead 140), a gap can be formed between the connecting portions of adjacent metal plates. Figure 43 In China, regarding Figure 42 In a modified example, the connecting portion 73 of the second drive lead 70 is shown to have a structure in which a gap G1 is formed between the connecting portion 73A of the metal plate 70A and the connecting portion 73B of the metal plate 70B, and a gap G2 is formed between the connecting portion 73B of the metal plate 70B and the connecting portion 73C of the metal plate 70C. Figure 43 In the middle, the gap G1 gradually increases towards the center of the transverse direction X of the connecting parts 73A and 73B. The gap G2 gradually increases towards the center of the transverse direction X of the connecting parts 73B and 73C.

[0350] Figure 43 The connection portion of the drive lead shown is formed in a non-contact manner with the connection portion of the adjacent metal plates, but it is not limited to this. For example, the connection portion of the drive lead (first drive lead 60, 80, second drive lead 70, 90, and drive lead 140) may be in a state where the connection portion of the adjacent metal plates is in partial contact.

[0351] In the above embodiments, the spacing between adjacent laser junctions in the horizontal direction X in the first connecting portion 61 of the first driving lead 60, the spacing between adjacent laser junctions in the horizontal direction X in the second connecting portion 62, the spacing between adjacent laser junctions in the horizontal direction X in the first connecting portion 71 of the second driving lead 70, and the spacing between adjacent laser junctions in the horizontal direction X in the second connecting portion 72 can be arbitrarily changed.

[0352] In one example, such as Figure 44 As shown, the distance PC1 between the laser junction 74A and the laser junction 74B, and the distance PC2 between the laser junction 74B and the laser junction 74C in the first connection portion 71A of the second driving lead 70 are respectively greater than the distances PC1 and PC2 of the second driving lead 70 in the first embodiment (see reference). Figure 21 The laser bonding portion 64A is formed at the front end of the first connecting portion 71A in the transverse direction X, the laser bonding portion 64B is formed at the center of the first connecting portion 71A in the transverse direction X, and the laser bonding portion 64C is formed at the base end of the first connecting portion 71A in the transverse direction X. Furthermore, the distance PD between the laser bonding portions 74D and 74E in the first connecting portion 71B is greater than the distance PD of the second driving lead 70 in the first embodiment (see reference). Figure 21 Large. In addition, the laser junction 74F is formed at the center of the first connecting portion 71C in the transverse direction X.

[0353] In the above embodiments, the number of laser joints in the first connecting portion 61 of the first driving lead 60, the number of laser joints in the second connecting portion 62, the number of laser joints in the first connecting portion 71 of the second driving lead 70, and the number of laser joints in the second connecting portion 72 can be arbitrarily changed.

[0354] In one example, such as Figure 45 As shown, five laser bonding portions 74A, 74B, 74C, 74G, and 74H are formed on the first connecting portion 71A. Laser bonding portions 74G and 74H are formed in the transverse direction X at a base end (near the connecting portion 73A) of laser bonding portions 74A, 74B, and 74C in the first connecting portion 71A. In the transverse direction X, laser bonding portion 74G is adjacent to laser bonding portion 74C. In the transverse direction X, laser bonding portion 74H is adjacent to laser bonding portion 74G. In the transverse direction X, laser bonding portions 74A, 74B, 74C, 74G, and 74H are formed on the first connecting portion 71A at equal intervals.

[0355] Four laser-bonded portions 74D, 74E, 74I, and 74J are formed on the first connecting portion 71B. Laser-bonded portions 74I and 74J are formed in the transverse direction X at a base end (near the connecting portion 73B) of laser-bonded portions 74D and 74E in the first connecting portion 71B. In the transverse direction X, laser-bonded portion 74I is adjacent to laser-bonded portion 74E. In the transverse direction X, laser-bonded portion 74J is adjacent to laser-bonded portion 74I. In the transverse direction X, laser-bonded portions 74D, 74E, 74I, and 74J are formed at equal intervals in the first connecting portion 71B. In the thickness direction Z, laser-bonded portions 74D, 74E, 74I, and 74J are offset from laser-bonded portions 74A, 74B, 74C, 74G, and 74H. Laser-bonded portion 74I is located between laser-bonded portions 74C and 74G in the transverse direction X. The laser-bonded portion 74J is located between the laser-bonded portions 74G and 74H in the transverse X direction.

[0356] Three laser-bonded portions 74F, 74K, and 74L are formed on the first connecting portion 71C. Laser-bonded portions 74K and 74L are formed in the transverse direction X at a position closer to the base (near the connecting portion 73C) than laser-bonded portion 74F in the first connecting portion 71C. In the transverse direction X, laser-bonded portion 74K is adjacent to laser-bonded portion 74F. In the transverse direction X, laser-bonded portions 74L are adjacent to laser-bonded portion 74K. In the transverse direction X, laser-bonded portions 74F, 74K, and 74L are formed at equal intervals in the first connecting portion 71C. In the thickness direction Z, laser-bonded portions 74F, 74K, and 74L are offset from laser-bonded portions 74D, 74E, 74I, and 74J. Laser-bonded portion 74K is located between laser-bonded portions 74E and 74I in the transverse direction X. The laser-bonded portion 74L is located between the laser-bonded portions 74I and 74J in the transverse X direction. In addition, in the thickness Z direction, the laser-bonded portion 74K coincides with the laser-bonded portion 74C of the first connecting portion 71A, and the laser-bonded portion 74L coincides with the laser-bonded portion 74G of the first connecting portion 71A.

[0357] In the above embodiments, the number of metal plates constituting the drive leads (first drive leads 60, 80, second drive leads 70, 90, and drive lead 140) can be arbitrarily changed. As an example, in Figure 46 In, it means from Figure 42 In the modified example, the structure of metal plates 70B and 70C is omitted in the second driving lead 70. That is, in Figure 46 In the middle, it represents the structure of the second drive lead 70 for the unlaminated metal plate.

[0358] like Figure 46As shown, the second driving lead 70 is constructed from a metal plate 70A. Therefore, the first connecting portion 71 of the second driving lead 70 is constructed from the first connecting portion 71A of the metal plate 70A, the second connecting portion 72 of the second driving lead 70 is constructed from the second connecting portion 72A of the metal plate 70A, and the connecting portion 73 of the second driving lead 70 is constructed from the connecting portion 73A of the metal plate 70A. The first connecting portion 71 (71A) is laser-bonded to the source electrode 33 of the second semiconductor element 30L. Laser-bonded portions 74A, 74B, and 74C are formed on the first connecting portion 71 (71A). The second connecting portion 72 (72A) is laser-bonded to the conductive component 42B. Laser-bonded portions 75A, 75B, and 75C are formed on the second connecting portion 72 (72A).

[0359] In the above embodiments, the structure of the second connection portion of the drive leads (first drive leads 60, 80, second drive leads 70, 90, and drive lead 140) can be arbitrarily changed. For example, the second connection portion may not be a laminated structure of metal plates.

[0360] [Postscript]

[0361] The following describes the technical ideas that can be grasped from the above embodiments and variations.

[0362] (Note 1) A semiconductor device includes a semiconductor element having a main surface on which a driving electrode is formed, a driving conductor having a driving connection surface oriented in the same direction as the main surface of the element, and a driving connection member connecting the driving electrode and the driving conductor and being formed by a strip of metal sheet viewed from a first direction perpendicular to the main surface of the semiconductor element. The driving connection member has an element-side connection portion connected to the driving electrode, and the element-side connection portion has an element-side connection portion that is joined to the driving electrode by laser processing.

[0363] (Note 2) According to the semiconductor device described in Note 1, the drive connection member has a conductor-side connection portion connected to the drive conductor, and the conductor-side connection portion has a conductor-side joint portion that is joined to the drive conductor by laser processing.

[0364] Symbol Explanation

[0365] 1A, 1B, 1C, 1D, 1E—Semiconductor devices; 10, 10C, 10E—Sealing resin; 22—Input lead (driving conductor); 22c—Extension; 22cs—Main surface (driving connection surface); 30—Semiconductor element; 30U—First semiconductor element; 30L—Second semiconductor element; 31—Element main surface; 32—Element back surface; 33—Source electrode (driving electrode); 34—Gate electrode (control electrode); 42B—Conductive component (driving conductor); 42sb—Main surface (driving connection surface); 44A—Gate layer (connection conductor); 44B—Gate layer (connection conductor); 45A—Detection layer (connection conductor); 45B—Detection layer (connection conductor) 51—First control wire, 52—Second control wire, 53—First connecting wire, 54—Second connecting wire, 55—First detection wire, 56—Second detection wire, 57—First connecting wire, 58—Second connecting wire, 60—First drive lead wire (drive connecting component, second drive connecting component), 60A—Metal plate (first metal plate), 60B—Metal plate (second metal plate), 60C—Metal plate (third metal plate), 61—First connecting part, 61A—First connecting part (first component side connecting part), 61B—First connecting part (second component side connecting part), 61C—First connecting part (third component side connecting part), 62—Second connecting part, 62A— Second connecting part (first conductor side connecting part), 62B—second connecting part (second conductor side connecting part), 62C—second connecting part (third conductor side connecting part), 63—connecting part, 63A—connecting part (first connecting part), 63B—connecting part (second connecting part), 63C—connecting part (third connecting part), 64A, 64B, 64C—laser bonding part (first element side bonding part), 64D, 64E—laser bonding part (second element side bonding part), 64F—laser bonding part (third element side bonding part), 65A, 65B, 65C—laser bonding part (first conductor side bonding part), 65D, 65E—laser bonding part (second conductor side bonding part), 65F—laser bonding part (third element side bonding part) 70—Second drive lead (drive connection member, first drive connection member), 70A—Metal plate (first metal plate), 70B—Metal plate (second metal plate), 70C—Metal plate (third metal plate), 71—First connecting part, 71A—First connecting part (first component side connecting part), 71B—First connecting part (second component side connecting part), 71C—First connecting part (third component side connecting part), 72—Second connecting part, 72A—Second connecting part (first conductor side connecting part), 72B—Second connecting part (second conductor side connecting part), 72C—Second connecting part (third conductor side connecting part), 73—Connecting part, 73A—Connecting part (first connecting part).73B—Connecting part (second connecting part), 73C—Connecting part (third connecting part), 74A, 74B, 74C—Laser bonding part (first element side bonding part), 74D, 74E—Laser bonding part (second element side bonding part), 75F—Laser bonding part (third element side bonding part), 75A, 75B, 75C—Laser bonding part (first conductor side bonding part), 75D, 75E—Laser bonding part (second conductor side bonding part), 75F—Laser bonding part (third conductor side bonding part), 80—First drive lead (drive connecting member), 80A—Metal plate (first metal plate), 80B—Metal plate (second metal plate), 80C—Metal plate (third metal plate), 81—First connecting part, 81A—First connecting part (first component side joint), 81B—First connecting part (second component side joint), 81C—First connecting part (third component side joint), 82—Second connecting part, 82A—Second connecting part (first conductor side joint), 82B—Second connecting part (second conductor side joint), 82C—Second connecting part (third conductor side joint), 83—Connecting part, 83A— 83B—Connecting part (first connecting part), 83C—Connecting part (second connecting part), 83C—Connecting part (third connecting part), 90—Second drive lead wire (drive connecting member), 90A—Metal plate (first metal plate), 90B—Metal plate (second metal plate), 90C—Metal plate (third metal plate), 91—First connecting part, 91A—First connecting part (first component side joint), 91B—First connecting part (second component side joint), 91C—First connecting part (third component side joint), 92—Second connecting part, 92A—Second connecting part (first lead wire) 92B—Second connecting part (second conductor side joint), 92C—Second connecting part (third conductor side joint), 93—Connecting part, 93A—Connecting part (first connecting part), 93B—Connecting part (second connecting part), 93C—Connecting part (third connecting part), 140—Drive lead (drive connecting member), 140A—Metal plate (first metal plate), 140B—Metal plate (second metal plate), 140C—Metal plate (third metal plate), 141—First connecting part, 142—Second connecting part, 143—Connecting part.

Claims

1. A semiconductor device characterized by comprising: a semiconductor element having an element main surface on which a first electrode is formed on a surface; a first conductor having a connection surface directed in the same direction as the element main surface of the semiconductor element; and a first connection member connecting the first electrode and the first conductor, formed of a plurality of metal thin plates that are strip-shaped as viewed from a first direction that is perpendicular to the element main surface of the semiconductor element, the first connection member has at least a first metal plate connected to the semiconductor element and a second metal plate laminated to the first metal plate, the first metal plate has a first element-side connection portion connected to the first electrode, the second metal plate has a second element-side connection portion connected to the first element-side connection portion, the first element-side connection portion and the second element-side connection portion are laminated in the first direction, a first element-side joining portion joined to the first electrode by laser processing is formed on the first element-side connection portion, a second element-side joining portion joined to the first element-side connection portion by laser processing is formed on the second element-side connection portion, the second element-side joining portion is disposed so as to deviate from the first element-side joining portion as viewed from the first direction.

2. The semiconductor device according to claim 1, characterized in that the first connection member includes a third metal plate laminated to the second metal plate, the third metal plate has a third element-side connection portion laminated to the second element-side connection portion in the first direction.

3. The semiconductor device according to claim 2, characterized in that a third element-side joining portion joined to the second element-side connection portion by laser processing is formed on the third element-side connection portion.

4. The semiconductor device according to claim 3, characterized in that the second element-side joining portion and the third element-side joining portion are disposed so as to deviate from each other as viewed from the first direction.

5. The semiconductor device according to claim 4, characterized in that the first element-side joining portion and the third element-side joining portion coincide with each other as viewed from the first direction.

6. The semiconductor device according to claim 3, characterized in that the number of the first element-side joining portions is less than the number of the second element-side joining portions, the number of the third element-side joining portions is less than the number of the second element-side joining portions.

7. The semiconductor device according to claim 1, characterized in that the laminated first element-side connection portion and the second element-side connection portion deviate from each other in a direction in which the first connection member extends as viewed from the first direction.

8. The semiconductor device according to claim 1, characterized in that the plurality of metal thin plates of the first connection member are of the same material, and the widths of the plurality of metal thin plates are equal to each other as viewed from the first direction.

9. The semiconductor device according to claim 1, characterized in that the first metal plate has a first conductor-side connection portion connected to the connection surface of the first conductor, ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ The second metal plate has a second conductor-side connecting portion connected to the first conductor-side connecting portion, The first conductor-side connecting portion and the second conductor-side connecting portion are stacked in the first direction.

10. The semiconductor device according to claim 9, wherein A first conductor-side joining portion joined to the connecting surface of the first conductor by laser processing is formed on the first conductor-side connecting portion, A second conductor-side joining portion joined to the first conductor-side connecting portion by laser processing is formed on the second conductor-side connecting portion.

11. The semiconductor device according to claim 10, wherein The first conductor-side joining portion and the second conductor-side joining portion are disposed apart from each other in a manner not to coincide with each other as viewed in the first direction.

12. The semiconductor device according to claim 9, wherein The plurality of first connecting members include a third metal plate stacked on the second metal plate, The third metal plate has a third conductor-side connecting portion stacked on the second conductor-side connecting portion in the first direction.

13. The semiconductor device according to claim 12, wherein A third conductor-side joining portion joined to the second conductor-side connecting portion by laser processing is formed on the third conductor-side connecting portion.

14. The semiconductor device according to claim 13, wherein A second conductor-side joining portion joined to the first conductor-side connecting portion by laser processing is formed on the second conductor-side connecting portion, The second conductor-side joining portion and the third conductor-side joining portion are disposed apart from each other in a manner not to coincide with each other as viewed in the first direction.

15. The semiconductor device according to claim 14, wherein A first conductor-side joining portion joined to the connecting surface of the first conductor by laser processing is formed on the first conductor-side connecting portion, The first conductor-side joining portion and the third conductor-side joining portion coincide with each other as viewed in the first direction.

16. The semiconductor device according to claim 13, wherein A first conductor-side joining portion joined to the connecting surface of the first conductor by laser processing is formed on the first conductor-side connecting portion, A second conductor-side joining portion joined to the first conductor-side connecting portion by laser processing is formed on the second conductor-side connecting portion, The number of the first conductor-side joining portions is smaller than the number of the second conductor-side joining portions, The number of the third conductor-side joining portions is smaller than the number of the second conductor-side joining portions.

17. The semiconductor device according to claim 9, wherein The first metal plate has a first linking portion linking the first element-side connecting portion and the first conductor-side connecting portion, The second metal plate has a second linking portion linking the second element-side connecting portion and the second conductor-side connecting portion, The first linking portion and the second linking portion are stacked.

18. The semiconductor device according to claim 17, wherein The first connecting member includes a third metal plate laminated to the second metal plate, The third metal plate has a third element-side connecting portion connected to the second element-side connecting portion, a third conductor-side connecting portion connected to the second conductor-side connecting portion, and a third connecting portion connecting the third element-side connecting portion and the third conductor-side connecting portion, The second connecting portion and the third connecting portion are laminated.

19. The semiconductor device according to claim 1, wherein The semiconductor element is a MOSFET.

20. The semiconductor device according to claim 1, wherein A sealing resin that seals the semiconductor element is further provided.

21. The semiconductor device according to claim 1, wherein A control electrode is formed on the element main surface of the semiconductor element, The semiconductor device further includes a control conductor and a control connecting member that connects the control electrode and the control conductor, The control connecting member is formed of a wire.

22. The semiconductor device according to claim 1, wherein The semiconductor element includes a first semiconductor element and a second semiconductor element connected in series by the first connecting member, The first connecting member includes a second connecting portion connected to a first electrode of the first semiconductor element and a third connecting portion connected to a first electrode of the second semiconductor element.

23. The semiconductor device according to claim 22, wherein The semiconductor element includes a plurality of the first semiconductor elements and a plurality of the second semiconductor elements, The first connecting member includes a plurality of the second connecting portions and a plurality of the third connecting portions.

24. The semiconductor device according to any one of claims 1 to 23, wherein A plurality of the first connecting members are connected to the first electrode of one of the semiconductor elements, The plurality of the first connecting members are arranged in a direction along the element main surface as viewed in the first direction.

25. A manufacturing method of a semiconductor device that includes: a semiconductor element having an element main surface on which a first electrode is formed; a first conductor having a connecting surface that faces in the same direction as the element main surface; and a first connecting member that connects the first electrode and the first conductor and is formed of a thin plate that is belt-shaped as viewed in a first direction that is perpendicular to the element main surface of the semiconductor element, the manufacturing method of the semiconductor device characterized by including: a first electrode connecting process of forming a first element-side connecting portion by connecting a first metal plate that is the first connecting member to the first electrode of the semiconductor element; and a first element-side lamination process of forming a second element-side connecting portion by connecting a second metal plate that is the first connecting member to the first element-side connecting portion in a state of being laminated to the first element-side connecting portion in the first direction by laser processing, The first electrode connecting process of forming a first element-side connecting portion by connecting a first metal plate that is the first connecting member to the first electrode of the semiconductor element; and The first electrode connecting process of forming a first element-side connecting portion by connecting a first metal plate that is the first connecting member to the first electrode of the semiconductor element; and The first electrode connecting process of forming a first element-side connecting portion by connecting a first metal plate that is the first connecting member to the first electrode of the semiconductor element; and ​ ​ ​ ​ A second element side joining portion joined to the first element side joining portion by laser processing is formed on the second element side connecting portion, The second element side joining portion is disposed so as not to coincide with the first element side joining portion when viewed in the first direction.

26. The method of manufacturing a semiconductor device according to claim 25, wherein A second element side layering process of joining a third metal plate as the first connecting member to the second element side connecting portion by laser processing in a state of being layered on the second element side connecting portion in the first direction is further provided.

27. The method of manufacturing a semiconductor device according to claim 26, wherein A conductor connecting process of forming a first conductor side connecting portion by laser processing of joining the first metal plate to the first conductor after the first electrode connecting process and before the first element side layering process is further provided.

28. The method of manufacturing a semiconductor device according to claim 27, wherein A first conductor side layering process of forming a second conductor side connecting portion by laser processing of joining the second metal plate to the first conductor side connecting portion in a state of being layered on the first conductor side connecting portion in the first direction after the first element side layering process and before the second element side layering process is further provided.

29. The method of manufacturing a semiconductor device according to claim 28, wherein A second conductor side layering process of forming a third conductor side connecting portion by laser processing of joining the third metal plate to the second conductor side connecting portion in a state of being layered on the second conductor side connecting portion in the first direction after the second element side layering process is further provided.

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