Substrate processing method, computer-readable storage medium, and substrate processing apparatus

Abstract

Provided is a substrate processing method, a computer-readable storage medium, and a substrate processing apparatus that can achieve uniformity of development processing in the plane of a substrate. The substrate processing method includes: performing first development processing in which a nozzle having one end surface and a spray outlet opened in the end surface is disposed so that the end surface faces a surface of a substrate, the nozzle is moved while the end surface is in contact with a development liquid on the surface of the substrate and the development liquid is sprayed from the spray outlet at a first flow rate while the substrate is rotated; and performing second development processing after the first development processing, in which the substrate is rotated and the development liquid is sprayed from the spray outlet at a second flow rate that is greater than the first flow rate while the end surface is in contact with the development liquid on the surface of the substrate at a position that faces the center of the surface of the substrate.

Description

Technical Field

[0001] This disclosure relates to a substrate processing method, a computer-readable storage medium, and a substrate processing apparatus. Background Technology

[0002] Patent Document 1 discloses a substrate processing method comprising the following steps: a reservoir formation step, wherein a reservoir of diluted developer diluted with pure water is formed at the center of the substrate; a liquid film formation step is performed after the reservoir formation step, wherein the substrate is rotated at a first rotational speed to spread the reservoir of diluted developer across the entire surface of the substrate to form a liquid film of diluted developer; and a developer supply step is performed after the liquid film formation step, wherein while the substrate is rotated at a second rotational speed slower than the first rotational speed, developer is supplied from a nozzle having a liquid contact surface to form a reservoir of developer between the substrate and the liquid contact surface, and the nozzle is moved radially through the center of the substrate to supply developer onto the substrate.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2016-111345 Summary of the Invention

[0006] The problem the invention aims to solve

[0007] This disclosure provides a substrate processing method, a computer-readable storage medium, and a substrate processing apparatus that effectively homogenizes the development process within the substrate surface.

[0008] Solution for solving the problem

[0009] One aspect of this disclosure relates to a substrate processing method comprising: performing a first developing process, wherein a nozzle having an end face and an outlet opening at the end face is arranged such that the end face faces the surface of the substrate, and while rotating the substrate, developing liquid is ejected from the outlet at a first flow rate, and the nozzle is moved while the end face contacts the developing liquid on the surface of the substrate; and performing a second developing process after the first developing process, wherein while rotating the substrate, developing liquid is ejected from the outlet at a second flow rate greater than the first flow rate while the end face contacts the developing liquid on the surface of the substrate at a position facing the center of the surface of the substrate.

[0010] The effects of the invention

[0011] According to this disclosure, a substrate processing method, a computer-readable storage medium, and a substrate processing apparatus are provided for effectively homogenizing the development process within the substrate surface. Attached Figure Description

[0012] Figure 1 This is a perspective view schematically illustrating an example of a substrate processing system.

[0013] Figure 2 This is a side view schematically illustrating an example of a coating and developing apparatus.

[0014] Figure 3 This is a schematic diagram illustrating an example of a developing unit.

[0015] Figure 4 This is a perspective view showing an example of a nozzle that ejects developer.

[0016] Figure 5 This is a block diagram illustrating an example of the functional structure of a control device.

[0017] Figure 6 This is a block diagram illustrating an example of the hardware structure of a control device.

[0018] Figure 7 This is a flowchart illustrating an example of pattern formation processing.

[0019] Figure 8 This is a flowchart illustrating an example of a series of processes, including pre-wetting.

[0020] Figure 9 This is a schematic diagram illustrating an example of pre-wetting treatment.

[0021] Figure 10 This is a flowchart illustrating an example of a series of processes including a first developing process.

[0022] Figure 11 (a)~ Figure 11 (d) is a schematic diagram illustrating an example of the first developing process.

[0023] Figure 12 This is a flowchart illustrating an example of a series of processes including a second developing process.

[0024] Figure 13 This is a schematic diagram illustrating an example of the second developing process.

[0025] Figure 14 This is a flowchart illustrating an example of a series of processes including a first rinsing process.

[0026] Figure 15 (a)~ Figure 15(c) is a schematic diagram illustrating an example of the first rinsing process.

[0027] Figure 16 This is a flowchart illustrating an example of a series of processes including a third development process.

[0028] Figure 17 This is a schematic diagram illustrating an example of the third development process.

[0029] Figure 18 This is a flowchart illustrating an example of a series of processes including a second developing process.

[0030] Explanation of reference numerals in the attached figures

[0031] 2: Coating and developing apparatus; 30: Rotating holding part; 40: Developing solution supply part; 42: Nozzle; 42a: End face; 42b: Spray outlet; 52: Nozzle drive part; U3: Developing unit; W: Workpiece; Wa: Surface; Wb: Outer periphery. Detailed Implementation

[0032] Hereinafter, an embodiment will be described with reference to the accompanying drawings. In the description, the same reference numerals are used to mark the same elements or elements having the same function, and repeated descriptions are omitted.

[0033] [Substrate Processing System]

[0034] Figure 1 The substrate processing system 1 shown is a system for forming a photosensitive coating on a workpiece W, exposing the photosensitive coating, and developing the photosensitive coating. The workpiece W, the object of processing, is, for example, a substrate, or a substrate that has been formed with a film or circuitry through a predetermined process. As an example, the substrate included in the workpiece W is a silicon-containing wafer. The workpiece W (substrate) can be formed in a circular shape. The workpiece W, the object of processing, can be a glass substrate, a mask substrate, an FPD (Flat Panel Display), or an intermediate obtained by performing a predetermined process on these substrates. The photosensitive coating is, for example, a resist film.

[0035] The substrate processing system 1 includes a coating and developing apparatus 2 and an exposure apparatus 3. The exposure apparatus 3 is an apparatus for exposing a resist film (photosensitive coating) formed on a workpiece W (substrate). Specifically, the exposure apparatus 3 irradiates the exposed portion of the resist film with energy rays using methods such as immersion exposure. Before exposure treatment by the exposure apparatus 3, the coating and developing apparatus 2 coats the surface of the workpiece W with a resist (solution) to form a resist film, and after exposure treatment, the resist film is developed.

[0036] The structure of the coating and developing apparatus 2, which is an example of a substrate processing apparatus, will be described below. Figure 1 and Figure 2 As shown, the coating and developing apparatus 2 includes a carrier block 4, a processing block 5, an interface block 6, and a control device 100 (control unit).

[0037] The carrier block 4 guides workpieces W into and out of the coating and developing apparatus 2. For example, the carrier block 4 can support multiple carriers C for workpieces W, and the carrier block 4 has a built-in conveying device A1 including a transfer arm. The carriers C, for example, hold multiple circular workpieces W. The conveying device A1 removes workpieces W from the carriers C and transfers them to the processing block 5, which receives the workpieces W and returns them to the carriers C. The processing block 5 has processing modules 11, 12, 13, and 14.

[0038] Processing module 11 includes a coating unit U1, a heat treatment unit U2, and a conveying device A3 for transporting workpiece W to these units. Processing module 11 forms a lower film on the surface of workpiece W using the coating unit U1 and the heat treatment unit U2. The coating unit U1 coats the workpiece W with a processing liquid for forming the lower film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the lower film.

[0039] Processing module 12 includes a coating unit U1, a heat treatment unit U2, and a conveying device A3 for transporting workpiece W to these units. Processing module 12 forms a resist film on a lower film using the coating unit U1 and the heat treatment unit U2. The coating unit U1 coats the lower film with a treatment solution for forming the resist film. The treatment solution for forming the resist film can be a resist solution with medium to high viscosity. The viscosity of the treatment solution for forming the resist film can be 50 cP to 1000 cP, 100 cP to 800 cP, or 200 cP to 600 cP. The heat treatment unit U2 performs various heat treatments accompanying the formation of the resist film. The thickness of the resist film can be 5 μm to 30 μm, 6 μm to 25 μm, or 7 μm to 20 μm.

[0040] Processing module 13 includes a coating unit U1, a heat treatment unit U2, and a conveying device A3 for transporting workpiece W to these units. Processing module 13 forms an upper film on the resist film using the coating unit U1 and the heat treatment unit U2. The coating unit U1 coats the resist film with a processing solution for forming the upper film. The heat treatment unit U2 performs various heat treatments accompanying the formation of the upper film.

[0041] Processing module 14 includes a developing unit U3, a heat treatment unit U4, and a conveying device A3 for transporting workpiece W to these units. Processing module 14 performs the development of the exposed resist film and the accompanying heat treatment via the developing unit U3 and heat treatment unit U4. The developing unit U3 applies a developing solution to the surface of the exposed workpiece W and then washes it away with a rinsing solution, thereby forming a resist pattern (developing the resist film). The heat treatment unit U4 performs various heat treatments accompanying the development. Specific examples of heat treatment include pre-development heat treatment (PEB: Post-Exposure Bake) and post-development heat treatment (PB: Post-Bake).

[0042] A frame unit U10 is provided on the side of the support block 4 within the processing block 5. The frame unit U10 is divided into multiple layers arranged in the vertical direction. A conveying device A7, including a lifting arm, is provided near the frame unit U10. The conveying device A7 causes the workpiece W to move up and down between the layers of the frame unit U10.

[0043] A frame unit U11 is provided on the side of the interface block 6 within the processing block 5. The frame unit U11 is divided into multiple layers arranged in the vertical direction.

[0044] The interface block 6 and the exposure device 3 exchange workpiece W. For example, the interface block 6 has a built-in conveying device A8 including a transfer arm, and the interface block 6 is connected to the exposure device 3. The conveying device A8 transfers the workpiece W, which is arranged in the rack unit U11, to the exposure device 3. The conveying device A8 removes the workpiece W from the exposure device 3 and returns it to the rack unit U11.

[0045] The control device 100 controls the coating and developing apparatus 2 to perform the coating and developing process, for example, as follows. First, the control device 100 controls the conveying device A1 to convey the workpiece W in the carrier C to the rack unit U10, and controls the conveying device A7 to place the workpiece W in the layer for the processing module 11.

[0046] Next, the control device 100 controls the conveying device A3 to convey the workpiece W from the rack unit U10 to the coating unit U1 and heat treatment unit U2 within the processing module 11. Additionally, the control device 100 controls the coating unit U1 and heat treatment unit U2 to form a lower film on the surface of the workpiece W. Afterward, the control device 100 controls the conveying device A3 to return the workpiece W with the lower film formed to the rack unit U10, and controls the conveying device A7 to place the workpiece W in a compartment for the processing module 12.

[0047] Next, the control device 100 controls the conveying device A3 to transport the workpiece W from the rack unit U10 to the coating unit U1 and heat treatment unit U2 within the processing module 12. Additionally, the control device 100 controls the coating unit U1 and heat treatment unit U2 to form a resist film on the surface of the workpiece W. Afterward, the control device 100 controls the conveying device A3 to return the workpiece W to the rack unit U10 and controls the conveying device A7 to place the workpiece W in the grid used in the processing module 13.

[0048] Next, the control device 100 controls the conveying device A3 to convey the workpiece W from the rack unit U10 to the respective units within the processing module 13. Additionally, the control device 100 controls the coating unit U1 and the heat treatment unit U2 to form an upper film on the resist film of the workpiece W. Afterward, the control device 100 controls the conveying device A3 to convey the workpiece W to the rack unit U11.

[0049] Next, the control device 100 controls the conveying device A8 to deliver the workpiece W from the rack unit U11 to the exposure device 3. Afterward, the control device 100 controls the conveying device A8 to receive the workpiece W that has undergone exposure treatment from the exposure device 3 and place the workpiece W in the layer used by the processing module 14 in the rack unit U11.

[0050] Next, the control device 100 controls the conveying device A3 to transport the workpiece W from the rack unit U11 to the respective units within the processing module 14, and controls the developing unit U3 and the heat treatment unit U4 to develop the resist film on the workpiece W. Afterwards, the control device 100 controls the conveying device A3 to return the workpiece W to the rack unit U10, and controls the conveying devices A7 and A1 to return the workpiece W to the carrier C. Through this process, the coating and developing process is completed.

[0051] Furthermore, the specific structure of the substrate processing apparatus is not limited to the structure of the coating and developing apparatus 2 illustrated above. The substrate processing apparatus can be any structure that includes a developing unit U3 and a control device 100 capable of controlling the developing unit U3.

[0052] (Developing unit)

[0053] Next, refer to Figure 3 and Figure 4 Let's illustrate an example of the developing unit U3 in detail. For example... Figure 3 As shown, the developing unit U3 includes, for example, a rotation holding part 30, a developing solution supply part 40 (liquid supply part) and a rinsing solution supply part 60.

[0054] A rotating holding part 30 holds the workpiece W and rotates it. The rotating holding part 30 includes, for example, a holding part 32 and a rotating drive part 34. The holding part 32 supports the back side of the workpiece W with its surface Wa facing upwards, for example, by vacuum adsorption. The rotating drive part 34 rotates the holding part 32 about a vertical rotation axis Ax, for example, using a power source such as an electric motor. Thus, the workpiece W rotates about the rotation axis Ax. The holding part 32 can hold the workpiece W such that its center is approximately aligned with the rotation axis Ax.

[0055] The developer supply unit 40 supplies developer to the surface Wa of the workpiece W held by the holding unit 32. The developer is a processing solution used to remove the portion of the resist film to be removed after exposure. The portion of the resist film to be removed is the portion soluble in the developer after exposure. When the developer is positive, the portion exposed during the exposure process is soluble in the developer. When the developer is negative, the portion not exposed during the exposure process is soluble in the developer. Specific examples of positive developers include alkaline solutions. Specific examples of negative developers include organic solvents. The developer supply unit 40 includes, for example, a nozzle 42, a tank 44, a pump 46, a valve 48, and a nozzle drive unit 52 (drive unit).

[0056] Nozzle 42 sprays developing solution toward surface Wa of workpiece W. For example... Figure 4 As shown, the nozzle 42 includes an end face 42a and an outlet 42b. The end face 42a faces the surface Wa of the workpiece W held by the holding part 32. The outlet 42b is disposed on the end face 42a (opened on the end face 42a). The nozzle 42 may have a circular end face 42a, and the outlet 42b may be opened at the center of the end face 42a. As an example, the center of the end face 42a and the center of the outlet 42b are approximately aligned.

[0057] The area of ​​end face 42a is smaller than the area of ​​surface Wa of workpiece W. The area of ​​end face 42a is, for example, 1% to 15% of the area of ​​surface Wa of workpiece W, or possibly 1% to 11% or 1% to 3%. Nozzle 42 can be made of resin material such as PTFE. Furthermore, nozzle 42 can include multiple nozzle outlets 42b distributed on end face 42a. The shape (outline) of nozzle outlet 42b can be circular, elliptical, polygonal, or slit-like. The area (opening area) of nozzle outlet 42b can be approximately 0.3% to 5% of the area of ​​end face 42a.

[0058] return Figure 3Nozzle 42 is connected to tank 44 via conduit 54. Tank 44 is used to contain developer. Pump 46 and valve 48 are provided on conduit 54. Pump 46, for example, is a bellows pump, used to pressurize and deliver developer from tank 44 to nozzle 42. Valve 48, for example, is a pneumatic valve, used to adjust the opening within conduit 54. By controlling valve 48, it is possible to switch between a state where developer is ejected from nozzle 42 and a state where developer is not ejected from nozzle 42. In addition, by controlling at least one of pump 46 and valve 48, the ejection flow rate (ejection flow rate per unit time) of developer ejected from nozzle 42 can be adjusted.

[0059] The nozzle drive unit 52 adjusts the position of the nozzle 42. More specifically, the nozzle drive unit 52 moves the nozzle 42 across the top of the workpiece W with its end face 42a facing downwards, and raises and lowers the nozzle 42. For example, the nozzle drive unit 52 has a mechanism for moving the nozzle 42 along the surface Wa of the workpiece W using a power source such as an electric motor, and a mechanism for raising and lowering the nozzle 42 using a power source such as an electric motor. When moving the nozzle 42 along the surface Wa of the workpiece W, the nozzle drive unit 52 moves the nozzle 42 along a path passing through the rotation axis Ax of the workpiece W. The nozzle drive unit 52 can move the nozzle 42 along a straight path or along a curved path.

[0060] The rinsing fluid supply unit 60 supplies a rinsing fluid, different from the developing fluid, to the surface Wa of the workpiece W held by the holding unit 32. The rinsing fluid is used to rinse away the developing fluid. Alternatively, the rinsing fluid can also be used as a pre-wetting fluid supplied to the surface Wa before the developing fluid is supplied. The rinsing fluid may be, for example, pure water or DIW (Deionized Water). The rinsing fluid supply unit 60 includes, for example, a nozzle 62, a tank 64, a pump 66, a valve 68, and a nozzle drive unit 72.

[0061] Nozzle 62 sprays rinsing fluid toward surface Wa of workpiece W. Nozzle 62 is connected to tank 64 via pipe 74. Tank 64 is used to contain the rinsing fluid. Pump 66 and valve 68 are provided on pipe 74. Pump 66, such as a bellows pump, is used to pressurize and deliver rinsing fluid from tank 64 to nozzle 62. Valve 68, such as a pneumatic valve, is used to regulate the opening within pipe 74. By controlling valve 68, it is possible to switch between a state where rinsing fluid is sprayed from nozzle 62 and a state where rinsing fluid is not sprayed from nozzle 62. In addition, by controlling at least one of pump 66 and valve 68, the spray flow rate of rinsing fluid sprayed from nozzle 62 can also be adjusted.

[0062] The nozzle drive unit 72 moves the nozzle 62, for example, by a power source such as an electric motor. Specifically, the nozzle drive unit 72 moves the nozzle 62 along the surface Wa of the workpiece W with the nozzle outlet facing downwards.

[0063] (Control device)

[0064] Next, refer to Figure 5 and Figure 6 To illustrate one example of the control device 100, the control device 100 controls the coating and developing apparatus 2, which includes the developing unit U3. For example... Figure 5 As shown, the control device 100 includes, for example, a pre-wetting control unit 102, a first developing control unit 104, a second developing control unit 106, a first rinsing control unit 112, a third developing control unit 114, a second rinsing control unit 116, and a nozzle switching control unit 117 as functional structures (hereinafter referred to as "functional modules"). The processing performed by each functional module is equivalent to the processing performed by the control device 100.

[0065] The pre-wetting control unit 102 causes the developing unit U3 to perform a pre-wetting process. The pre-wetting process includes: rotating the holding part 32 holding the workpiece W by the rotation drive unit 34; and supplying rinsing liquid to the surface Wa of the workpiece W by the rinsing liquid supply unit 60 while rotating the workpiece W by the rotation holding part 30.

[0066] The first developing control unit 104 causes the developing unit U3 to perform a first developing process. The first developing process involves arranging the nozzle 42 with its end face 42a facing the surface Wa of the workpiece W. While rotating the workpiece W via the rotation holding unit 30, the nozzle 42 is moved via the nozzle drive unit 52 while the end face 42a contacts the developing solution on the surface Wa of the workpiece W. The first flow rate is predetermined; for example, it can be 100 ml / min to 700 ml / min, 200 ml / min to 600 ml / min, or 300 ml / min to 500 ml / min. The rotational speed of the workpiece W during the first developing process is, for example, 300 rpm to 1000 rpm.

[0067] In the first developing process, the end face 42a comes into contact with the developing solution that has been ejected from the nozzle 42 and supplied to the surface Wa during the execution of the first developing process, as well as the rinsing solution supplied during the pre-wetting process. Hereinafter, the state in which the end face 42a of the nozzle 42 is in contact with the processing liquid containing the developing solution on the surface Wa of the workpiece W is referred to as the "liquid contact state". In the first developing process, the following actions are performed in parallel: while rotating the workpiece W, developing solution is ejected at a first flow rate from the ejection outlet 42b of the nozzle 42 facing the surface Wa of the workpiece W; and while maintaining the liquid contact state, the nozzle 42 is moved along the surface Wa.

[0068] While rotating the workpiece W and ejecting developer solution from the nozzle 42b at a first flow rate, the first developing control unit 104 can reciprocate the nozzle 42 radially along the workpiece W via the nozzle drive unit 52 while maintaining liquid contact. For example, the first developing control unit 104 reciprocates the nozzle 42 between a position facing the center (rotation axis Ax) of the surface Wa of the workpiece W and a position facing the outer periphery Wb of the workpiece W via the nozzle drive unit 52. When the nozzle 42 faces the center of the workpiece W, the position of either the end face 42a or the nozzle 42b overlaps with the center of the workpiece W when viewed from vertically. When the nozzle 42 faces the outer periphery Wb of the workpiece W, the position of either the end face 42a or the nozzle 42b overlaps with the outer periphery Wb of the workpiece W when viewed from vertically. In one example, viewed from vertically above, the first developing control unit 104 causes the workpiece W to reciprocate between a position where the nozzle 42b overlaps with the center of the workpiece W and a position where the nozzle 42b overlaps with the outer periphery Wb of the workpiece W via the nozzle drive unit 52.

[0069] In the first developing process, the first developing control unit 104 can also cause the developing unit U3 to perform a sweep-out process, and after the sweep-out process, cause the developing unit U3 to perform a sweep-in process. The sweep-out process is as follows: while rotating the workpiece W by the rotating holding unit 30 and spraying the developing liquid from the nozzle outlet 42b at a first flow rate, while bringing the end face 42a into contact with the developing liquid on the surface Wa of the workpiece W, the nozzle drive unit 52 moves the nozzle 42 from the center of the workpiece W toward the outer periphery Wb of the workpiece W. In one example, while maintaining the liquid contact state, the first developing control unit 104 moves the nozzle 42 from a position where the nozzle outlet 42b faces the center of the workpiece W to a position where the nozzle outlet 42b faces the outer periphery Wb by the nozzle drive unit 52.

[0070] The sweep-in process is as follows: while rotating the workpiece W via the rotation holding unit 30 and ejecting developer from the nozzle outlet 42b at a first flow rate, the nozzle 42 is moved from the outer periphery Wb of the workpiece W toward the center of the workpiece W via the nozzle drive unit 52 while contacting the end face 42a with the developer on the surface Wa of the workpiece W. In one example, while maintaining the liquid contact state, the first development control unit 104 moves the nozzle 42 from a position where the nozzle outlet 42b faces the outer periphery Wb of the workpiece W to a position where the nozzle outlet 42b faces the center of the workpiece W via the nozzle drive unit 52. Between the sweep-out process and the sweep-in process, the first development control unit 104 can use the nozzle drive unit 52 to stop the nozzle 42 at a position facing the outer periphery Wb of the workpiece W for a predetermined time while in liquid contact state, ejecting developer from the nozzle outlet 42b at a first flow rate.

[0071] After the first developing process, the second developing control unit 106 causes the developing unit U3 to perform a second developing process. The second developing process involves rotating the workpiece W via the rotating holding unit 30, and then ejecting developing solution from the nozzle 42b at a predetermined second flow rate while the end face 42a is in contact with the developing solution on the surface Wa of the workpiece W at a position facing the center of the surface Wa of the workpiece W. The second flow rate is preset to a value greater than the first flow rate. For example, the second flow rate can be 300 ml / min to 900 ml / min, 400 ml / min to 800 ml / min, or 500 ml / min to 700 ml / min.

[0072] The second developing control unit 106 can cause the developing unit U3 to continuously perform a second developing process by ejecting developing solution at a second flow rate for a predetermined time (the state of ejecting developing solution at a second flow rate can be maintained for a predetermined time by the developing solution supply unit 40). The predetermined time for continuously performing the second developing process is, for example, 5 seconds to 20 seconds. The rotational speed of the workpiece W in the second developing process is, for example, 100 rpm to 1000 rpm.

[0073] With the nozzle 42 positioned facing the center of the surface Wa of the workpiece W during the first developing process, the second developing control unit 106 can increase the flow rate of the developing liquid ejected from the nozzle 42 from a first flow rate to a second flow rate, causing the developing unit U3 to begin the second developing process. With the nozzle 42 stopped at the position where it was positioned at the end of the sweep-in process of the first developing process via the nozzle drive unit 52, the second developing control unit 106 can directly increase the flow rate to the second flow rate to begin the second developing process. Alternatively, the nozzle 42 can be moved by the nozzle drive unit 52 to a position different from the position of the nozzle 42 at the end of the sweep-in process of the first developing process within the region where the nozzle 42 faces the center of the surface Wa of the workpiece W, and the second developing control unit 106 can increase the flow rate to the second flow rate to begin the second developing process.

[0074] After the second developing process, the first rinsing control unit 112 causes the developing unit U3 to perform a first rinsing process. The first rinsing process involves supplying rinsing fluid to the surface Wa of the workpiece W via the rinsing fluid supply unit 60 while rotating the workpiece W via the rotating holding unit 30. After performing the first rinsing process, the first rinsing control unit 112 can continue to rotate the workpiece W via the rotating holding unit 30 to remove the rinsing fluid from the surface Wa of the workpiece W, even when the supply of rinsing fluid via the rinsing fluid supply unit 60 has stopped.

[0075] In the first rinsing process, the flow rate (flow rate per unit time) of the rinsing fluid ejected from nozzle 62 (or other nozzles) toward surface Wa is set to a predetermined third flow rate. This third flow rate is, for example, set to a value equal to or greater than the flow rate of the developing fluid ejected in the second developing process. In one example, the third flow rate is 500 ml / min to 1500 ml / min. The rotational speed of the workpiece W in the first rinsing process can be set to a value equal to or greater than the rotational speed of the workpiece W in the second developing process. In one example, the rotational speed of the workpiece W in the first rinsing process is 100 rpm to 1500 rpm. In one example, the execution time of the first rinsing process is 3 seconds to 15 seconds.

[0076] After the second developing process (e.g., after the first rinsing process), the third developing control unit 114 causes the developing unit U3 to perform a third developing process. The third developing process involves supplying developing solution from the nozzle 42 to the surface Wa of the workpiece W to form a reservoir of developing solution, and controlling the rotating holding unit 30 to hold the reservoir on the surface Wa of the workpiece W. For example, in the third developing process, the third developing control unit 114 causes the developing unit U3 to perform the same process as the sweep-out process of the first developing process (hereinafter referred to as the "sweep-out process in the third developing process") to form a reservoir of developing solution on the surface Wa of the workpiece W. In the sweep-out process of the third developing process, the third developing control unit 114 can, in the same manner as the first developing process, cause the nozzle 42 to eject developing solution at a first flow rate. The third developing control unit 114 causes the rotating holding unit 30 to perform a deceleration process that reduces the rotational speed of the workpiece W in parallel with the sweep-out process of the third developing process.

[0077] In the deceleration process, the third developing control unit 114 controls the rotation holding unit 30 to reduce the rotation of the workpiece W from a speed (e.g., 200 rpm to 400 rpm) to a different speed (e.g., 5 rpm to 20 rpm). The deceleration process may include controlling the rotation holding unit 30 to gradually decrease the rotational speed of the workpiece W as the center (ejection outlet 42b) of the end face 42a of the nozzle 42 approaches the outer periphery Wb of the workpiece W. In this case, gradually decreasing the rotational speed may also include a staged decrease in multiple phases. Alternatively, the third developing control unit 114 may control the rotation holding unit 30 to gradually decrease the deceleration of the rotation of the workpiece W as the center of the end face 42a approaches the outer periphery Wb of the workpiece W. By performing the deceleration control in parallel with the sweeping process in the third developing process, excessive development that could occur in the central portion of the workpiece W is suppressed during the formation of the developer reservoir, and damage to the reservoir at the outer periphery of the workpiece W is suppressed.

[0078] The third development control unit 114 can rotate the workpiece W at a low speed (e.g., a speed below the speed at which the deceleration process is completed) via the rotation holding unit 30, or it can stop the workpiece W from rotating via the rotation holding unit 30, so as to hold the liquid reservoir of the developer on the surface Wa of the workpiece W. For example, after the liquid reservoir of the developer is formed, the third development control unit 114 performs the following sweeping operation (sweeping operation in the third development process) in the same way as the first development process: while rotating the workpiece W via the rotation holding unit 30, while bringing the end face 42a into contact with the developer on the surface Wa of the workpiece W, the nozzle 42 is moved from the outer periphery Wb of the workpiece W toward the center of the workpiece W via the nozzle drive unit 52. Afterwards, the third development control unit 114 controls the development unit U3 to keep the workpiece W in a stopped state for a predetermined time (so that the development unit U3 performs static development). During the static development period, the third development control unit 114 can either stop the developer supply unit 40 from ejecting developer from the nozzle 42, or allow the developer supply unit 40 to continue ejecting developer at a predetermined flow rate set to be suitable for removing dissolved products and replacing developer.

[0079] After the third developing process, the second rinsing control unit 116 causes the developing unit U3 to perform a second rinsing process. The second rinsing control unit 116, for example, causes the developing unit U3 to perform the second rinsing process in the same way as the first rinsing process described above. The spray flow rate of the rinsing fluid and the rotational speed of the workpiece W in the second rinsing process can be the same as or different from those in the first rinsing process. After performing the second rinsing process, the second rinsing control unit 116 can also, even with the rinsing fluid supply stopped by the rinsing fluid supply unit 60, continue to rotate the workpiece W by rotating the holding unit 30 to remove the rinsing fluid from the surface Wa of the workpiece W (drying the workpiece W).

[0080] Before and after each of the aforementioned first, second, and third developing processes, the nozzle switching control unit 117 controls the nozzle drive unit 52 to perform at least one of nozzle 42 configuration and retraction. For example, after the second developing process or after the aforementioned static developing process in the third developing process, the nozzle switching control unit 117 controls the nozzle drive unit 52 to raise the nozzle 42 from a state where the end face 42a of the nozzle 42 is in contact with the developing solution on the surface Wa of the workpiece W to above the surface Wa of the workpiece W. Furthermore, the nozzle switching control unit 117 controls the nozzle drive unit 52 to retract the raised nozzle 42 beyond the workpiece W. Before and after each of the aforementioned pre-wetting process, first rinsing process, and second rinsing process, the nozzle switching control unit 117 controls the nozzle drive unit 72 to perform at least one of nozzle 62 configuration and retraction.

[0081] When the nozzle 42 rises above the surface Wa of the workpiece W, the nozzle switching control unit 117 can control the nozzle drive unit 52 to perform multiple retraction actions to retract the nozzle 42. Each retraction action includes rising the nozzle 42 by a predetermined amount and stopping the nozzle 42 after the rise. By performing multiple retraction actions, the nozzle 42 is raised in stages (including nozzle actions with multiple rising steps). The nozzle switching control unit 117 can control the nozzle drive unit 52 to make the rising speed of the nozzle 42 different between the multiple rising steps, so that no liquid adhering to the end face 42a remains.

[0082] Sometimes a standby section (not shown) is provided on the outside of the cup surrounding the holding portion 32 for holding the workpiece W. This standby section has the function of keeping the nozzle 42 in standby mode inside the standby section and cleaning the end face 42a with cleaning fluid when the nozzle 42 is not being used for processing. In this case, when the nozzle 42 is moved from inside the standby section to outside the standby section to move the nozzle 42 upwards in the cup at the start of liquid processing, the nozzle switching control unit 117 can control the nozzle drive unit 52 in the same way as described above, so that the nozzle operation includes multiple upward steps. As a result, it is possible to prevent liquid from adhering to the end face 42a of the nozzle 42 inside the standby section.

[0083] The control device 100 comprises one or more control computers. For example, the control device 100 has... Figure 6 The circuit 120 shown has one or more processors 122, a memory 124, a storage device 126, an input / output port 128, and a timer 132. The storage device 126 may be a computer-readable storage medium, such as a hard disk. The storage medium stores a program for causing the control device 100 to execute the substrate processing method described later. The storage medium may be a removable medium such as a non-volatile semiconductor memory, a magnetic disk, or an optical disk. The memory 124 temporarily stores the program downloaded from the storage medium of the storage device 126 and the calculation results of the processor 122.

[0084] The processor 122 and memory 124 cooperate to execute the above program. The input / output port 128 inputs and outputs electrical signals to and from the rotation holding unit 30, the developer supply unit 40, and the rinsing solution supply unit 60, according to instructions from the processor 122. The timer 132 measures elapsed time, for example, by counting reference pulses of a fixed period. Furthermore, the hardware structure of the control device 100 can be constructed from dedicated logic circuits or an ASIC (Application Specific Integrated Circuit) integrating such logic circuits.

[0085] [Substrate Processing Method]

[0086] Next, refer to Figure 7 To illustrate, we will describe a pattern formation process performed in the developing unit U3 as an example of a substrate processing method. Figure 7 This is a flowchart illustrating an example of a pattern-forming process performed on a workpiece W.

[0087] With the workpiece W to be processed positioned in the developing unit U3 (rotation holding section 30), the control device 100 first executes step S01. In step S01, for example, the pre-wetting control unit 102 causes the developing unit U3 to perform the pre-wetting process described above. When the workpiece W is rotated by the rotation holding section 30, the pre-wetting control unit 102 supplies rinsing fluid to the surface Wa of the workpiece W through the rinsing fluid supply unit 60. Specific examples of the pre-wetting process will be described later.

[0088] Next, the control device 100 executes step S02. In step S02, for example, the first developing control unit 104 causes the developing unit U3 to perform the first developing process described above. When the workpiece W is rotated by the rotating holding unit 30, the first developing control unit 104, while spraying the developing liquid with the nozzle 42 (ejection outlet 42b) toward the surface Wa of the workpiece W at the first flow rate, moves the nozzle 42 by the nozzle drive unit 52 while the end face 42a of the nozzle 42 contacts the processing liquid on the surface Wa of the workpiece W. Specific examples of the first developing process will be described later.

[0089] Next, the control device 100 executes step S03. In step S03, for example, the second development control unit 106 causes the development unit U3 to perform the second development process described above. When the workpiece W is rotated by the rotation holding unit 30, the second development control unit 106, with the end face 42a of the nozzle 42 positioned opposite the center of the surface Wa of the workpiece W in contact with the developing liquid on the surface Wa of the workpiece W, causes the developing liquid to be ejected from the nozzle outlet 42b at a second flow rate. Specific examples of the second development process will be described later.

[0090] Next, the control device 100 executes step S04. In step S04, for example, the first rinsing control unit 112 causes the developing unit U3 to perform a first rinsing process. When the workpiece W is rotated by the rotating holding unit 30, the first rinsing control unit 112 can supply rinsing fluid to the surface Wa of the workpiece W through the rinsing fluid supply unit 60. Specific examples of the first rinsing process will be described later.

[0091] Next, the control device 100 executes step S05. In step S05, for example, the third developing control unit 114 causes the developing unit U3 to perform a third developing process. The third developing control unit 114 causes the nozzle 42 to supply developing solution to the surface Wa of the workpiece W to form a reservoir of developing solution, and controls the rotating holding unit 30 to hold the reservoir of developing solution on the surface Wa of the workpiece W. Specific examples of the third developing process will be described later.

[0092] Next, the control device 100 executes step S06. In step S06, for example, the second rinsing control unit 116 causes the developing unit U3 to perform a second rinsing process. The second rinsing control unit 116 causes the developing unit U3 to perform the second rinsing process in the same way as the first rinsing process in step S04. Through the above steps, the pattern formation process for a workpiece W is completed. Hereinafter, these steps will be described in terms of the processing before and after each of the steps S01 to S05 described above.

[0093] (Pre-wetting treatment)

[0094] Figure 8 This is a flowchart illustrating an example of a series of processes including the pre-wetting treatment in step S01 and the treatments before and after the pre-wetting treatment. First, with the workpiece W, the object of processing, held in the rotating holding unit 30, the control device 100 executes steps S11 and S12. In step S11, for example, the control device 100 starts rotating the workpiece W via the rotating holding unit 30. In subsequent steps, the workpiece W continues to rotate until the control device 100 stops rotating the workpiece W via the rotating holding unit 30. In step S12, for example, the nozzle switching control unit 117 controls the nozzle drive unit 72 to position the nozzle 62 of the rinsing fluid supply unit 60 facing the center (rotation axis Ax) of the surface Wa of the workpiece W.

[0095] Next, the control device 100 executes step S13. In step S13, for example, the pre-wetting control unit 102 causes the nozzle 62 to start supplying rinsing fluid to the surface Wa of the workpiece W via the rinsing fluid supply unit 60. The pre-wetting control unit 102 can switch the valve 68 of the rinsing fluid supply unit 60 from a closed state to an open state, thereby causing the rinsing fluid supply unit 60 to start supplying rinsing fluid. As a result, the nozzle 62 starts spraying rinsing fluid (pre-wetting fluid) onto the surface Wa of the workpiece W, which is rotating via the rotating holding unit 30, thus initiating the pre-wetting process.

[0096] Next, the control device 100 executes step S14. In step S14, for example, the pre-wetting control unit 102 stands by from the start of supplying rinsing fluid in step S13 until the pre-wetting time has elapsed. The pre-wetting time is preset to a level that allows the desired amount of rinsing fluid to be supplied to the surface Wa.

[0097] Next, the control device 100 executes step S15. In step S15, for example, the pre-wetting control unit 102 stops the nozzle 62 from supplying rinsing fluid to the surface Wa of the workpiece W via the rinsing fluid supply unit 60. The pre-wetting control unit 102 can switch the valve 68 of the rinsing fluid supply unit 60 from the open state to the closed state, thereby stopping the rinsing fluid supply unit 60 from supplying rinsing fluid (or it can stop the nozzle 62 from spraying rinsing fluid). By executing the above steps S13 to S15 (pre-wetting treatment), as Figure 9 As shown, while the workpiece W rotates around the rotation axis Ax, rinsing fluid is supplied to the surface Wa of the workpiece W, forming a liquid film RF of rinsing fluid on the surface Wa.

[0098] Next, the control device 100 executes step S16. In step S16, for example, the nozzle switching control unit 117 controls the nozzle drive unit 72 to retract the nozzle 62 from the center of the surface Wa of the workpiece W to outside the workpiece W. Through the above steps, a series of processes, including the pre-wetting treatment, are completed.

[0099] (First developing process)

[0100] Figure 10 This is a flowchart illustrating an example of a series of processes including the first developing process (step S02) and the processes preceding and following the first developing process. After executing step S16 described above, the control device 100 executes steps S21 and S22. In step S21, for example, the control device 100 controls the rotation holding unit 30 to adjust the rotational speed of the workpiece W to the set value in the first developing process. In step S22, for example, the nozzle switching control unit 117 controls the nozzle drive unit 52 to position the nozzle 42 of the developer supply unit 40 facing the center (rotation axis Ax) of the surface Wa of the workpiece W. The nozzle switching control unit 117 may also control the nozzle drive unit 72 to position the nozzle 42 so that its outlet 42b faces the center of the surface Wa of the workpiece W.

[0101] Next, the control device 100 executes step S23. In step S23, for example, the first developing control unit 104 causes the developing unit U3 to begin ejecting developing solution from the nozzle 42 and moving the nozzle toward the outer periphery Wb of the workpiece W. This initiates the aforementioned sweeping process. Figure 11As shown in (a), the first developing control unit 104 causes the nozzle 42 facing the center of the workpiece W to start ejecting developing solution from the nozzle outlet 42b via the developing solution supply unit 40, and causes the nozzle 42 to start moving from the center of the workpiece W toward the outer periphery Wb via the nozzle drive unit 52. The first developing control unit 104 can switch the valve 48 of the developing solution supply unit 40 from a closed state to an open state, thereby causing the developing solution to start being ejected from the nozzle outlet 42b. The first developing control unit 104 controls the pump 46 or the valve 48 to make the ejection flow rate from the nozzle outlet 42b a first flow rate.

[0102] Next, the control device 100 executes step S24. In step S24, for example, the first developing control unit 104 stands by until the nozzle 42 moves to a position where the nozzle outlet 42b faces the outer periphery Wb. The first developing control unit 104 determines, for example, whether the nozzle 42 has moved to the position facing the outer periphery Wb based on the rotation angle of the motor included in the nozzle drive unit 52. Thus, as Figure 11 As shown in (b), the nozzle 42, which sprays developer at a first flow rate, moves from the center of the rotating workpiece W toward the outer periphery Wb while in contact with the developer on the surface Wa of the workpiece W.

[0103] Next, the control device 100 executes step S25. In step S25, for example, the first developing control unit 104 stops the movement of the nozzle 42 via the nozzle drive unit 52. Thus, the sweeping process ends. In the above steps S23 to S25 (sweeping process), while controlling the developing solution supply unit 40 to make the nozzle 42 spray developing solution at a first flow rate, the first developing control unit 104 maintains the liquid contact state of the nozzle 42 and moves the nozzle 42 from the center of the workpiece W toward the outer periphery Wb of the workpiece W via the nozzle drive unit 52.

[0104] Next, the control device 100 executes step S26. In step S26, for example, the first developing control unit 104 remains in standby mode from stopping the movement of the nozzle 42 in step S25 until a predetermined adjustment time has elapsed. With the nozzle outlet 42b facing the outer periphery Wb of the workpiece W, the first developing control unit 104 controls the developing solution supply unit 40 to spray developing solution from the nozzle 42 at a first flow rate until the adjustment time has elapsed. The adjustment time is preset according to the desired development progress of the outer periphery of the workpiece W in the first developing process.

[0105] Next, the control device 100 executes step S27. In step S27, for example, the first developing control unit 104 causes the nozzle 42 to begin moving toward the center of the workpiece W via the developing unit U3. This initiates the aforementioned sweeping process. While the first developing control unit 104 continues to eject developing solution at a first flow rate from the nozzle 42 outlet 42b, which is in contact with the developing solution reservoir DF, the nozzle driving unit 52 causes the nozzle 42 to begin moving from the outer periphery Wb of the workpiece W toward the center.

[0106] Next, the control device 100 executes step S28. In step S28, for example, the first developing control unit 104 stands by until the nozzle 42 moves to a position (rotation axis Ax) where the nozzle outlet 42b faces the center of the workpiece W. The first developing control unit 104 determines, for example, whether the nozzle 42 has moved to a position facing the center of the workpiece W based on the rotation angle of the motor included in the nozzle drive unit 52. Thus, as Figure 11 As shown in (d), the nozzle 42, which sprays developer at a first flow rate, moves from the outer periphery Wb of the rotating workpiece W toward the center while in contact with the developer on the surface Wa of the workpiece W.

[0107] Next, the control device 100 executes step S29. In step S29, for example, the first developing control unit 104 stops the nozzle 42 from moving via the nozzle drive unit 52. Thus, the scanning process ends. In steps S27 to S29 (scanning process) above, while controlling the developer supply unit 40 to eject developer from the nozzle 42 at a first flow rate, the first developing control unit 104 maintains the liquid contact state of the nozzle 42 and moves the nozzle 42 from the outer periphery Wb of the workpiece W towards the center via the nozzle drive unit 52. Through these steps, a series of processes including the first developing process ends.

[0108] (Second development process)

[0109] Figure 12 This is a flowchart illustrating an example of a series of processes including the second developing process (step S03) and the processes before and after the second developing process. After executing step S29 described above, the control device 100 executes step S31. In step S31, for example, the control device 100 controls the rotation holding unit 30 to adjust the rotational speed of the workpiece W to the set value in the second developing process.

[0110] Next, the control device 100 executes step S32. In step S32, for example, as... Figure 13As shown, the second developing control unit 106, while maintaining the nozzle drive unit 52 in a state where the nozzle outlet 42b faces the center of the workpiece W at the end of the sweeping process in step S29, controls the developing liquid supply unit 40 to increase the ejection flow rate from the nozzle outlet 42b from a first flow rate to a second flow rate. The second developing control unit 106 can control the valve 48 to increase the opening degree of the valve 48 of the developing liquid supply unit 40, or it can control the pump 46 to increase the pressure at which the pump 46 pressurizes and delivers the developing liquid, thereby increasing the ejection flow rate to the second flow rate. By increasing the ejection flow rate of the developing liquid from the nozzle outlet 42b to the second flow rate, the second developing process is initiated.

[0111] Next, the control device 100 executes step S33. In step S33, for example, the second development control unit 106 stands still from the start of the second development process in step S32 until the center ejection time has elapsed. The center ejection time is preset to a degree that allows sufficient progress in the development of the resist film through the development process, which includes the second development process, the first development process in step S02, and the third development process in step S05, which will be described in detail later.

[0112] Next, the control device 100 executes step S34. In step S34, for example, the second developing control unit 106 controls the developing solution supply unit 40 to stop the nozzle 42 from ejecting developing solution. The second developing control unit 106 switches the valve 48 of the developing solution supply unit 40 from an open state to a closed state, thereby stopping the ejection of developing solution from the nozzle 42 outlet 42b. In the above steps S32 to S34 (second developing process), the second developing control unit 106 maintains the nozzle 42 in liquid contact with the center of the surface Wa of the workpiece W while controlling the developing solution supply unit 40 to eject developing solution from the nozzle 42 at a second flow rate.

[0113] Next, the control device 100 executes step S35. In step S35, for example, the nozzle switching control unit 117 controls the nozzle drive unit 52 to retract the nozzle 42 from the center of the surface Wa of the workpiece W to outside the workpiece W. At this time, a reservoir DF of developer is formed on the surface Wa of the workpiece W. Through the above steps, a series of processes including the second developing process is completed. Furthermore, when the nozzle 42 is retracted in step S35, the nozzle switching control unit 117 can control the nozzle drive unit 52 to make the nozzle 42 perform the above-mentioned multiple retraction actions in stages.

[0114] (First rinse treatment)

[0115] Figure 14This is a flowchart illustrating an example of a series of processes including the first rinsing process (step S04) and the processes preceding and following the first rinsing process. After executing step S35 described above, the control device 100 executes steps S41 and S42. In step S41, for example, the control device 100 controls the rotation holding unit 30 to adjust the rotational speed of the workpiece W to the set value in the first rinsing process. In step S42, for example, the nozzle switching control unit 117 controls the nozzle drive unit 72 to position the nozzle 62 of the rinsing fluid supply unit 60 facing the center (rotation axis Ax) of the surface Wa of the workpiece W.

[0116] Next, the control device 100 executes steps S43 and S44. In step S43, for example... Figure 15 As shown in (a), the first flushing control unit 112 controls the flushing fluid supply unit 60 to cause the nozzle 62, disposed on the rotating shaft Ax, to begin supplying flushing fluid to the surface Wa of the workpiece W. The first flushing control unit 112 can switch the valve 68 of the flushing fluid supply unit 60 from a closed state to an open state, thereby causing the nozzle 62 to begin spraying flushing fluid. The first flushing control unit 112 can control the pump 66 or the valve 68 to make the spray flow rate of the flushing fluid sprayed from the nozzle 62 a third flow rate. In step S44, for example, the first flushing control unit 112 stands by from the start of spraying flushing fluid in step S43 until the flushing time has elapsed. The flushing time is preset, for example, as shown in the figure. Figure 15 As shown in (b), it is set to the extent that the reservoir DF of the developer on the surface Wa of the workpiece W can be replaced with a liquid film RF of the rinsing fluid.

[0117] Next, the control device 100 executes step S45. In step S45, for example, the first rinsing control unit 112 controls the rinsing fluid supply unit 60 to stop the nozzle 62 from supplying rinsing fluid to the surface Wa of the workpiece W. The first rinsing control unit 112 can switch the valve 68 of the rinsing fluid supply unit 60 from an open state to a closed state, thereby stopping the nozzle 62 from spraying rinsing fluid. In the above steps S42 to S44 (first rinsing process), the second rinsing control unit 116 supplies rinsing fluid to the surface Wa of the workpiece W by spraying rinsing fluid at a third flow rate toward the rotating surface Wa of the workpiece W by the nozzle 62.

[0118] Next, the control device 100 executes steps S46 and S47. In step S46, for example, the nozzle switching control unit 117 controls the nozzle drive unit 72 to retract the nozzle 62 from the center of the workpiece W to outside the workpiece W. In step S47, for example, the control device 100 enters standby mode from the point where the rinsing fluid supply was stopped in step S45 until the spin-drying time has elapsed. The spin-drying time is preset, for example, as shown in the example... Figure 15As shown in (c), it is configured to displace at least a portion of the rinsing fluid on the surface Wa of the workpiece W beyond the workpiece W. Furthermore, the control device 100 can control the rotational holding unit 30 to increase the rotational speed of the workpiece W after the rinsing fluid supply stops compared to the rotational speed during the first rinsing process. Through these steps, a series of processes, including the first rinsing process, is completed.

[0119] (Third developing process)

[0120] Figure 16 This is a flowchart illustrating an example of a series of processes including the third developing process (step S05) and the processes preceding and following the third developing process. After executing step S47 described above, the control device 100 executes steps S51 and S52. In step S51, for example, the control device 100 controls the rotation holding unit 30 to adjust the rotational speed of the workpiece W to a set value in the third developing process. In step S52, for example, the nozzle switching control unit 117 controls the nozzle drive unit 52 to position the nozzle 42 at a position facing the center (rotation axis Ax) of the surface Wa of the workpiece W, opposite the nozzle outlet 42b of the developer supply unit 40.

[0121] Next, the control device 100 executes step S53. In step S53, for example, the third developing control unit 114 causes the developing unit U3 to begin ejecting developer from the nozzle 42, moving the nozzle 42 toward the outer periphery Wb, and decelerating the rotational speed of the workpiece W. The third developing control unit 114 causes the developer supply unit 40 to start ejecting developer from the nozzle outlet 42b, and causes the nozzle 42 to start moving from the center of the workpiece W toward the outer periphery Wb via the nozzle drive unit 52. The third developing control unit 114 can switch the valve 48 of the developer supply unit 40 from a closed state to an open state, thereby causing the nozzle 42 to start ejecting developer. The third developing control unit 114 can control the developer supply unit 40 to make the ejection flow rate of the developer ejected from the nozzle 42 a first flow rate.

[0122] Next, the control device 100 executes step S54. In step S54, for example, the third developing control unit 114 stands by until the nozzle 42 moves to a position where the nozzle outlet 42b faces the outer periphery Wb. The third developing control unit 114 determines, for example, whether the nozzle 42 has moved to a position facing the outer periphery Wb based on the rotation angle of the motor included in the nozzle drive unit 52. Thus, the nozzle 42, which is in contact with the developing liquid formed on the surface Wa of the workpiece W by the developing liquid ejected in this process, continues to eject the developing liquid while moving from the center of the rotating workpiece W toward the outer periphery Wb (performing the sweeping process in the third developing process). At this time, the third developing control unit 114 can control the rotation holding unit 30 so that the rotational speed of the workpiece W gradually decreases as the center of the end face 42a (the nozzle outlet 42b) of the nozzle 42 approaches the outer periphery Wb of the workpiece W.

[0123] Next, the control device 100 executes step S55. In step S55, for example, the third developing control unit 114 stops the nozzle 42 from spraying developing solution and stops the movement of the nozzle 42 by means of the developing solution supply unit 40, and causes the rotation holding unit 30 to decelerate the rotation of the workpiece W. The third developing control unit 114 switches the valve 48 from the open state to the closed state, thereby stopping the nozzle 42 from spraying developing solution.

[0124] Next, the control device 100 executes steps S56 and S57. In step S56, for example, the nozzle switching control unit 117 controls the nozzle drive unit 52 to retract the nozzle 42, which is stopped at a position facing the outer periphery Wb of the workpiece W, away from the workpiece W. Furthermore, when the nozzle 42 is retracted in step S56, the nozzle switching control unit 117 can control the nozzle drive unit 52 to perform the aforementioned multiple retraction actions that cause the nozzle 42 to rise in stages. In step S57, for example, the third developing control unit 114 controls the rotation holding unit 30 to stop the workpiece W from rotating.

[0125] Next, the control device 100 executes step S58. In step S58, for example, the third developing control unit 114 enters standby mode after stopping the ejection of developing solution in step S55, until the developing time has elapsed. In this case, such as Figure 17 As shown, the state in which the developer reservoir DF is formed on the surface Wa of the workpiece W is maintained by stopping the workpiece W from rotating. Alternatively, the third development control unit 114 may maintain the state in which the developer reservoir DF is formed by keeping the workpiece W in a low-speed rotation (e.g., the rotational speed at the end of the deceleration control in step S56) without stopping the workpiece W's rotation, thereby maintaining the development unit U3 in this state. The development time is preset to a level that allows sufficient progress in the development of the resist film. In step S58, after the development time has elapsed, the series of processes, including the third development process, ends.

[0126] (Modified Example)

[0127] The above-described pattern formation process and its constituent steps are examples and can be modified appropriately. For instance, some of the steps (processes) can be omitted, or the steps can be performed in a different order. Furthermore, any two or more of the steps described above can be combined, or some steps can be modified or deleted. Alternatively, additional steps can be performed in addition to those described above.

[0128] Alternatively, the second developing control unit 106 may cause the developing unit U3 to intermittently perform the second developing process, with periods when the flow rate of the developing liquid ejected from the nozzle 42 is smaller than the second flow rate. During these periods, the control device 100 may control the developing liquid supply unit 40 to cause the nozzle 42 to eject the developing liquid at a flow rate smaller than the second flow rate. Alternatively, the control device 100 may control the developing liquid supply unit 40 to prevent the nozzle 42 from ejecting the developing liquid (stop ejection). In this way, the periods when the flow rate is smaller than the second flow rate include periods when the developing liquid is ejected at a flow rate smaller than the second flow rate and periods when the developing liquid is not ejected. During these periods, the control device 100 may use the rotation holding unit 30 to maintain the rotation of the workpiece W at the same speed as during the second developing process.

[0129] When the second development process is performed intermittently, the second development control unit 106 may also control the rotation holding unit 30 so that the rotational speed of the workpiece W in the second development process is greater than the rotational speed of the workpiece W during the period when the ejection flow rate is less than the second flow rate between the intermittently performed second development processes. Alternatively, by making the rotational speed in the second development process greater than the rotational speed during the period when the ejection flow rate is less than the second flow rate, the removal of dissolved products and the degree of development progress can be promoted.

[0130] Alternatively, the nozzle 42 in the second developing process may be positioned at a higher height than the nozzle 42 in other developing processes such as the first and third developing processes when ejecting developer at a second flow rate. For example, before the second developing process begins, the control device 100 may control the nozzle drive unit 52 after the first developing process has ended, causing the nozzle 42 to move upward. In this case, the portion of developer on the surface Wa of the end face 42a that contacts the workpiece W in the second developing process is smaller than the portion that contacts the developer in the first developing process. In this state, compared to the state where the surface Wa of the end face 42a, which contacts the workpiece W, is almost entirely in contact with the developer, even if the flow rate of the developer is reduced, the liquid reservoir below the nozzle 42b is smaller. Therefore, it is assumed that the flow of the developer is more easily changed (smoothly changed), thus reducing the possibility of pressure drops in the developer, such as bubbling, and momentary liquid interruptions.

[0131] The second development control unit 106 can change the rotation direction of the workpiece W during the second development process. Specifically, the second development control unit 106 can control the rotation holding unit 30 to alternately rotate the workpiece W in one rotational direction (forward rotation: for example, clockwise) and in the opposite rotational direction (reverse rotation: for example, counterclockwise). In this way, by rotating the workpiece W in both forward and reverse directions during the second development process, the flow of developer at various locations on the surface Wa of the workpiece W changes during forward and reverse rotation. Therefore, dissolved products can be efficiently removed from the surface Wa of the workpiece W, where a pattern is being formed through development. Furthermore, because the flow of developer on the surface Wa changes, uneven development progress in localized areas within the surface can be suppressed. During the second development process, the second development control unit 106 can control the rotation holding unit 30 to repeat the forward rotation and the reverse rotation of the workpiece W multiple times.

[0132] The control device 100 can also cause the developing unit U3 to perform a spin-drying process that throws the developing solution away from the workpiece W, replacing the first rinsing process in step S04, or cause the spin-drying process to be performed in addition to the first rinsing process (before the first rinsing process). In this case, such as Figure 5As shown, the control device 100 may also include a spin-drying control unit 118 as a functional module for causing the developing unit U3 to perform spin-drying processing. The spin-drying process is as follows: with the nozzle 42 stopped ejecting developing solution by the developing solution supply unit 40, the workpiece W is rotated by the rotating holding unit 30 to throw the developing solution on the surface Wa of the workpiece W out of the workpiece W. The rotation speed and rotation time in the spin-drying process are set to a degree that can throw the developing solution out of the workpiece W (discharge the developing solution on the surface Wa), and in one example, they are set to the same degree as the rotation speed and developing solution ejection time in the second developing process in step S03.

[0133] Figure 18 This is a flowchart illustrating the case where a second developing process is performed intermittently, followed by a spin-drying process. The control device 100 first executes step S71. In step S71, for example, the second developing control unit 106 starts ejecting developer at a second flow rate from the nozzle 42 via the developer supply unit 40. This initiates the second developing process. Next, the control device 100 executes step S72. In step S72, for example, the second developing control unit 106 remains on standby from the start of the second developing process in step S71 until a predetermined developer ejection time (ON time) has elapsed. Thus, the second developing process (in the state of ejecting developer at a second flow rate) continues until the developer ejection time has elapsed.

[0134] Next, the control device 100 executes steps S73 and S74. In step S73, for example, the second developing control unit 106 stops the nozzle 42 from ejecting developing solution via the developing solution supply unit 40. This temporarily interrupts the second developing process. In step S74, for example, the control device 100 enters standby mode from the point where developing solution ejection stops in step S73 until a predetermined developing solution stop time (OFF time) has elapsed. Thus, the state of not performing the second developing process (state of stopped developing solution ejection) continues until the developing solution stop time has elapsed.

[0135] Next, the control device 100 executes step S75. In step S75, for example, the control device 100 determines whether the total time of the execution period of the second developing process exceeds a predetermined central ejection time. If, in step S75, the total time of the execution period of the second processing does not exceed the central ejection time, the control device 100 repeats steps S71 to S75. The central ejection time used in step S75 is set to allow the second developing process to be executed intermittently multiple times. For example, the developer ejection time and developer stop time are set based on a balance between the progress of the developer and the conservation of the developer.

[0136] In step S75, if the total time of the second developing process (which is determined to be performed multiple times) exceeds the central ejection time, the control device 100 executes step S76. In step S76, for example, the spin-drying control unit 118 enters standby mode from the point in step S75 when it is determined that the central ejection time has exceeded, until a predetermined spin-drying time has elapsed. Thus, during the spin-drying time, without developer being ejected from the nozzle 42, the workpiece W is rotated by the rotating holding unit 30 to spin the developer on the surface Wa of the workpiece W away from the workpiece W. Furthermore, before executing step S76, the spin-drying control unit 118 can control the rotating holding unit 30 to a set value for the rotational speed of the workpiece W during the spin-drying process. Through these steps, a series of processes, including the intermittently performed second developing process and spin-drying process, is completed.

[0137] In the first developing process, the control device 100 may also prevent the developing unit U3 from performing a scan-out process and instead cause the developing unit U3 to perform a scan-in process. Alternatively, the control device 100 may cause the developing unit U3 to perform a scan-out process after performing a scan-in process. The control device 100 may also cause the developing unit U3 to perform multiple scan-in processes and multiple scan-out processes. The number of times the scan-in process is performed and the number of times the scan-out process is performed can be different.

[0138] The control device 100 may also omit the first rinsing process (or spin-drying process). For example, the control device 100 may omit the first rinsing process based on the viscosity (thickness of the resist film) of the processing liquid used to form the resist film. The control device 100 may also determine whether to perform the second developing process and the first rinsing process based on type information indicating the type (viscosity) of the processing liquid used to form the resist film or the thickness of the resist film. For example, the control device 100 may determine whether to perform the second developing process and the first rinsing process in three stages based on the type information. In one example, if the viscosity or film thickness indicated by the type information is less than a first threshold, the control device 100 may not cause the developing unit U3 to perform the second developing process and the first rinsing process. If the viscosity or film thickness indicated by the type information is greater than the first threshold and less than a second threshold, the control device 100 may cause the developing unit U3 to perform the second developing process but not the first rinsing process. The second threshold is set to a value greater than the first threshold. If the viscosity or film thickness indicated by the type information is greater than the second threshold, the control device 100 can cause the developing unit U3 to perform a second developing process and a first rinsing process. Alternatively, instead of the control device 100, the operator can preset whether to perform the second developing process and the first rinsing process based on the type information.

[0139] [Effects of the Implementation Method]

[0140] The substrate processing method described above includes: performing a first developing process, in which a nozzle 42 having an end face 42a and an outlet 42b opened on the end face 42a is arranged such that the end face 42a faces the surface Wa of the workpiece W, and while rotating the workpiece W, the nozzle 42 is moved while the outlet 42b ejects developing liquid from a first flow rate, and the end face 42a contacts the developing liquid on the surface Wa of the workpiece W; and performing a second developing process after the first developing process, in which while rotating the workpiece W, the developing liquid is ejected from the outlet 42b at a second flow rate greater than the first flow rate while the end face 42a contacts the developing liquid on the surface Wa of the workpiece W at a position facing the center of the surface Wa of the workpiece W.

[0141] Regarding the film thickness distribution of the coating to which the developing process is performed using the developing solution, there is a tendency for the film thickness in the central portion to be greater than that in the outer periphery of the workpiece W. Therefore, sometimes the degree of development in the film thickness direction of the central portion of the workpiece W is insufficient compared to the degree of development in the outer periphery. Furthermore, even if the degree of development in the central and outer periphery is homogenized, the degree of development in the central portion, where the film thickness is greater, is sometimes insufficient. To address this, in the aforementioned substrate processing method and coating developing apparatus 2, the developing solution is sprayed onto the vicinity of the center of the surface Wa of the workpiece W after the first developing process. As a result, in the second developing process, the development in the central portion progresses more than in the outer periphery, thus reducing the difference in the development progress between the central and outer periphery of the workpiece W, and eliminating insufficient development in the central portion. Therefore, homogenization of the developing process within the surface of the workpiece W is effective. Furthermore, by spraying the developing solution at a second flow rate greater than the first flow rate in the first developing process, the development progress can be accelerated, thereby enabling the rapid removal of dissolved products generated during development.

[0142] The first developing process may include: while rotating the workpiece W and ejecting developer from the nozzle 42b at a first flow rate, moving the nozzle 42 from the outer periphery Wb of the workpiece W toward the center of the workpiece W while bringing the end face 42a into contact with the developer on the surface Wa of the workpiece W. In the above-described substrate processing method, with the nozzle 42 positioned facing the center of the surface Wa of the workpiece W during the first developing process, the flow rate of the developer ejected from the nozzle 42b can be increased from the first flow rate to a second flow rate to begin the second developing process. In this case, the time from the first developing process to the second developing process can be shortened, thus improving the efficiency of the developing process.

[0143] The first developing process may further include: before moving the nozzle 42, which ejects developer at a first flow rate, from the outer periphery Wb of the workpiece W toward the center of the workpiece W, while rotating the workpiece W and ejecting developer at the first flow rate from the nozzle 42b, moving the nozzle 42 from the center of the workpiece W toward the outer periphery Wb of the workpiece W while bringing the end face 42a into contact with the developer on the surface Wa of the workpiece W. In this case, the surface Wa of the workpiece W is coated with developer at least twice in the first developing process. The contact angle of the developer with respect to the surface Wa of the workpiece W decreases with the first coating, thus facilitating the extended coating of developer in the second coating.

[0144] In the above-described substrate processing method, the second developing process can be performed intermittently during periods when the flow rate of the developing solution ejected from the nozzle 42b is smaller than the second flow rate. In this case, the amount of developing solution used can be reduced, and the dissolved products can be discharged outside the workpiece W between the second developing processes.

[0145] The rotational speed of the workpiece W during the second developing process can be greater than that during the period when the ejection flow rate of the developer is less than the second flow rate between intermittently performed second developing processes. In this case, the removal of dissolved products can be promoted and the progress of developing can be adjusted.

[0146] The rotation of the workpiece W in the second development process can include rotating the workpiece W in one direction and rotating it in the opposite direction. In this case, the flow of the developer at various locations on the surface Wa of the workpiece W changes, thus enabling efficient removal of dissolved products from the surface Wa of the workpiece W from which the pattern is initially formed during development. Furthermore, because the flow of the developer on the surface Wa changes, uneven development progress in localized areas within the surface can be suppressed.

[0147] The substrate processing method described above may further include: after the second development process, with the developer spraying out of the nozzle 42b stopped, rotating the workpiece W to fling the developer on the surface Wa of the workpiece W out of the workpiece W. In this case, the dissolved products generated on the surface Wa of the workpiece W during the second development process can be removed more reliably.

[0148] The above-described substrate processing method may further include: after a second development process, supplying a rinsing solution to the surface Wa of the workpiece W while rotating the workpiece W; and performing a third development process after rinsing with the rinsing solution, in which developing solution is supplied from a nozzle 42 to the surface Wa of the workpiece W to form a reservoir of developing solution, and the reservoir of developing solution is held on the surface Wa of the workpiece W. In this case, the dissolved products generated on the surface Wa of the workpiece W during the second development process can be removed more reliably by rinsing with the rinsing solution before the third development process.

[0149] The supply of rinsing fluid may include spraying rinsing fluid from nozzle 62 toward surface Wa of workpiece W at a third flow rate greater than the second flow rate. In this case, dissolved products generated on surface Wa of workpiece W during the second developing process can be removed rapidly.

[0150] The rotational speed of the workpiece W during the rinsing process can be higher than that of the workpiece W during the second developing process. In this case, the dissolved products generated on the surface Wa of the workpiece W during the second developing process can be removed quickly.

[0151] The substrate processing method described above may further include: after the second developing process, performing multiple retraction actions to retract the nozzle 42 while the ejection of the developing solution has stopped. Each retraction action may include raising the nozzle 42 and then stopping the nozzle 42 after raising it. In this case, by performing multiple retraction actions, the developing solution adhering to the end face 42a of the nozzle 42 can be removed, thereby reducing the possibility of the developing solution falling from the end face 42a when the nozzle 42 is retracted away from the workpiece W.

[0152] When the processing solution used to form the resist film is a resist with a viscosity of medium or higher, the film thickness distribution tends to be higher in the center than at the periphery. Furthermore, when using a resist with a viscosity of medium or higher, the thickness of the resist film increases (for example, to 5 μm or more). In the second development process, the developing solution is sprayed while the workpiece W is rotated, thus enabling development not only in the center of the workpiece W but also at the periphery. Therefore, even for film thicknesses that cannot be adequately developed by the third development process alone, the overall development of the film can be improved by performing the second development process. Therefore, the above-described substrate processing method and coating and developing apparatus 2 are more useful when using a resist with a viscosity of medium or higher.

Claims

1. A substrate processing method, comprising: A first developing process is performed, in which a nozzle having an end face and an outlet opening on the end face is arranged such that the end face faces the surface of the substrate. While rotating the substrate, the nozzle is moved while the end face contacts the developing liquid on the surface of the substrate. as well as After the first development process, a second development process is performed. In the second development process, while the substrate is rotated, the developing liquid is ejected from the nozzle at a second flow rate greater than the first flow rate, with the end face in contact with the developing liquid on the surface of the substrate at a position facing the center of the surface of the substrate.

2. The substrate processing method according to claim 1, characterized in that, The first developing process includes: while rotating the substrate and ejecting the developing solution from the nozzle at the first flow rate, moving the nozzle from the outer periphery of the substrate toward the center of the substrate while bringing the end face into contact with the developing solution on the surface of the substrate. With the nozzle positioned opposite the center of the substrate surface during the first developing process, the flow rate of the developing solution ejected from the nozzle is increased from the first flow rate to the second flow rate, and the second developing process begins.

3. The substrate processing method according to claim 2, characterized in that, The first developing process further includes: before moving the nozzle that ejects the developing liquid at the first flow rate from the outer periphery of the substrate toward the center of the substrate, while rotating the substrate and ejecting the developing liquid from the nozzle outlet at the first flow rate, moving the nozzle from the center of the substrate toward the outer periphery of the substrate while contacting the end face with the developing liquid on the surface of the substrate.

4. The substrate processing method according to claim 1, characterized in that, The second developing process is performed intermittently, with periods in which the flow rate of the developing solution ejected from the nozzle is smaller than the second flow rate.

5. The substrate processing method according to claim 4, characterized in that, The rotational speed of the substrate during the second developing process is greater than the rotational speed of the substrate during the period between intermittently performed second developing processes when the ejection flow rate of the developing solution is less than the second flow rate.

6. The substrate processing method according to claim 1, characterized in that, The second developing process of rotating the substrate includes rotating the substrate in one direction and rotating the substrate in the opposite direction.

7. The substrate processing method according to any one of claims 1 to 6, characterized in that, Also includes: After the second developing process, with the developer solution stopped being ejected from the nozzle, the substrate is rotated to fling the developer solution on the surface of the substrate off the substrate.

8. The substrate processing method according to any one of claims 1 to 6, characterized in that, Also includes: After the second development process, the substrate is rotated while rinsing liquid is supplied to the surface of the substrate; as well as After the rinsing solution is supplied, a third developing process is performed, in which the developing solution is supplied from the nozzle to the surface of the substrate to form a reservoir of the developing solution, and the reservoir of the developing solution is held on the surface of the substrate.

9. The substrate processing method according to claim 8, characterized in that, The flushing fluid is supplied by spraying the flushing fluid from other nozzles toward the surface of the substrate at a third flow rate greater than the second flow rate.

10. The substrate processing method according to claim 8, characterized in that, The rotational speed of the substrate during the supply of the rinsing solution is greater than or equal to the rotational speed of the substrate during the second developing process.

11. The substrate processing method according to any one of claims 1 to 6, characterized in that, Also includes: After the second developing process, while the ejection of the developing solution has stopped, multiple retraction actions are performed to retract the nozzle. Each of the multiple retreat actions includes raising the nozzle and then stopping the nozzle after raising it.

12. A computer-readable storage medium storing a program for causing a device to perform the substrate processing method according to any one of claims 1 to 11.

13. A substrate processing apparatus comprising: A rotating holding part that holds the substrate and rotates the substrate; A liquid supply unit has a nozzle and a drive unit. The nozzle includes an end face facing the surface of the substrate held by the rotating holding unit and an outlet for ejecting developer solution from the end face. The drive unit moves the nozzle along the surface of the substrate. The control unit controls the rotating holding unit and the liquid supply unit. in, The control unit performs the following processes in sequence: In the first developing process, while the substrate is rotated by the rotating holding part and the developing solution is ejected from the ejection port at a first flow rate, the nozzle is moved by the driving part while the end face is brought into contact with the developing solution on the surface of the substrate; and In the second developing process, after the first developing process, while rotating the substrate via the rotating holding part, the developing liquid is ejected from the nozzle at a second flow rate greater than the first flow rate, with the end face in contact with the developing liquid on the surface of the substrate at a position facing the center of the surface of the substrate.

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