Display substrate, manufacturing method thereof and display device

Abstract

A display substrate, a manufacturing method thereof, and a display device are provided. The display substrate includes a substrate, the substrate including at least a pixel area and an aperture area; a plurality of sub-pixels disposed on the substrate, the plurality of sub-pixels located in the pixel area; an aperture located in the aperture area; a first blocking dam disposed between the sub-pixel and the aperture and at least partially surrounding the aperture; an organic material layer, a projection of the organic material layer on the substrate falling in the pixel area, the organic material layer including at least one film layer; and a filling structure, at least a portion of the filling structure being disposed between the aperture and the first blocking dam, wherein the filling structure and the at least one film layer of the organic material layer are located in the same layer, and the filling structure and the at least one film layer of the organic material layer include the same material.

Description

[0001] Cross-reference to related applications

[0002] This application claims the benefit of Chinese Patent Application No. 202010463370.4, filed with the Chinese Patent Office on May 27, 2020, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to the field of display technology, and more specifically to a method for manufacturing a display substrate, a display substrate, and a display device. Background Technology

[0004] Flexible display devices are display devices formed based on flexible substrate materials. Due to their characteristics such as rollability, wide viewing angles, and portability, flexible display devices are increasingly widely used in various display products. Furthermore, with the rapid development of full-screen smartphones, mobile phone and panel manufacturers are actively researching screen hole-punch technology to place essential smartphone components such as cameras, speakers, and sensors under the screen, achieving true full-screen display. Therefore, the manufacturing process for forming holes in flexible display devices has become one of the important research topics for researchers in the display technology field.

[0005] The information disclosed in this section is only for understanding the background of the inventive concept of this disclosure, and therefore may include information that does not constitute prior art. Summary of the Invention

[0006] In one aspect, a display substrate is provided, comprising:

[0007] A substrate, the substrate comprising at least a pixel region and an opening region;

[0008] A plurality of sub-pixels are disposed on the substrate, and the plurality of sub-pixels are located in the pixel region;

[0009] An opening, wherein the opening is located in the opening area;

[0010] A first barrier dam is disposed between the sub-pixel and the opening, and at least partially surrounds the opening;

[0011] A second barrier dam is disposed on the side of the first barrier dam away from the opening;

[0012] An organic material layer, wherein the orthographic projection of the organic material layer on the substrate falls into the pixel region, the organic material layer comprising at least one film layer; and

[0013] A filling structure, at least a portion of which is disposed between the opening and the first barrier dam.

[0014] Wherein, at least one film layer of the filling structure and the organic material layer are located in the same layer, and the filling structure and at least one film layer of the organic material layer comprise the same material;

[0015] The width of the orthographic projection of the first barrier dam on the substrate is smaller than the width of the orthographic projection of the second barrier dam on the substrate.

[0016] According to some exemplary embodiments, the filling structure includes a single filling film layer, the organic material layer includes a planarization layer; and the filling film layer and the planarization layer are located in the same layer, and the filling film layer and the planarization layer include the same material.

[0017] According to some exemplary embodiments, the filling structure includes a first filling film layer and a second filling film layer, the organic material layer includes a planarization layer and a pixel defining layer; the first filling film layer and the planarization layer are located in the same layer, and the first filling film layer and the planarization layer include the same material; and the second filling film layer and the pixel defining layer are located in the same layer, and the second filling film layer and the pixel defining layer include the same material.

[0018] According to some exemplary embodiments, the display substrate includes a plurality of first barrier dams, wherein the orthographic projection of the first barrier dam closest to the opening on the substrate does not overlap with the orthographic projection of the filling structure on the substrate.

[0019] According to some exemplary embodiments, the display substrate includes a plurality of first barrier dams, wherein the orthographic projection of the first barrier dam closest to the opening on the substrate partially overlaps with the orthographic projection of the filling structure on the substrate.

[0020] According to some exemplary embodiments, the display substrate includes a plurality of first barrier dams, and the orthographic projection of the filling structure on the substrate covers the orthographic projection of the first barrier dam closest to the opening among the plurality of first barrier dams on the substrate.

[0021] According to some exemplary embodiments, the display substrate further includes a functional film layer disposed on the side of the organic material layer near the substrate, the functional film layer comprising:

[0022] A first conductive layer disposed on the substrate;

[0023] A gate insulating layer disposed on the side of the first conductive layer away from the substrate.

[0024] A second conductive layer is disposed on the side of the gate insulating layer away from the substrate.

[0025] An interlayer dielectric layer disposed on the side of the second conductive layer away from the substrate;

[0026] A third conductive layer is disposed on the side of the interlayer dielectric layer away from the substrate; and

[0027] A passivation layer disposed on the side of the third conductive layer away from the substrate.

[0028] According to some exemplary embodiments, the first barrier dam includes a stacked structure comprising a portion of each of the first conductive layer, the gate insulating layer, the second conductive layer, the interlayer dielectric layer, the third conductive layer, and the passivation layer; and the passivation layer includes a first portion located at the first barrier dam, the third conductive layer includes a first portion located at the first barrier dam, and the orthographic projection of the first portion of the passivation layer on the substrate falls within the orthographic projection of the first portion of the third conductive layer on the substrate.

[0029] According to some exemplary embodiments, the orthographic projection of the filling structure on the substrate covers the orthographic projection of a first portion of the passivation layer on the substrate.

[0030] According to some exemplary embodiments, the orthographic projection of the filling structure on the substrate partially overlaps with the orthographic projection of the first barrier dam on the substrate, and the area of ​​the overlapping portion is half the area of ​​the orthographic projection of the first barrier dam on the substrate.

[0031] According to some exemplary embodiments, the filling structure includes a first filling portion and a second filling portion, the second filling portion being closer to the first barrier dam than the first filling portion; the first filling portion includes a first surface away from the substrate, the second filling portion includes a second surface away from the substrate; and the vertical distance between the first surface and the substrate is greater than the vertical distance between the second surface and the substrate.

[0032] According to some exemplary embodiments, the first barrier dam includes a top surface away from the substrate and a side surface facing the opening, the passivation layer partially covering the top surface of the first barrier dam and the passivation layer covering the side surface of the first barrier dam.

[0033] According to some exemplary embodiments, the area of ​​the portion of the passivation layer covering the top surface of the first barrier dam projected onto the substrate is 3 / 10 to 7 / 10 of the area of ​​the first portion of the third conductive layer projected onto the substrate.

[0034] According to some exemplary embodiments, the orthographic projections of the first barrier dams other than the first barrier dam closest to the opening on the substrate are spaced apart from the orthographic projections of the filling structure on the substrate.

[0035] According to some exemplary embodiments, the display substrate further includes a third barrier dam disposed on the side of the second barrier dam away from the opening, and the width of the orthographic projection of the third barrier dam on the substrate is greater than the width of the orthographic projection of the second barrier dam on the substrate.

[0036] According to some exemplary embodiments, the display substrate further includes a fourth blocking dam disposed on the side of the third blocking dam away from the opening, and the width of the orthographic projection of the fourth blocking dam on the substrate is substantially equal to the width of the orthographic projection of the first blocking dam on the substrate.

[0037] According to some exemplary embodiments, the display substrate further includes a functional film layer disposed on the side of the organic material layer near the substrate, the functional film layer comprising:

[0038] A barrier layer disposed on the substrate;

[0039] A buffer layer is disposed on the side of the barrier layer away from the substrate.

[0040] A first gate insulating layer is disposed on the side of the buffer layer away from the substrate.

[0041] A first conductive layer disposed on the side of the first gate insulating layer away from the substrate.

[0042] A second gate insulating layer is disposed on the side of the first conductive layer away from the substrate.

[0043] A second conductive layer disposed on the side of the second gate insulating layer away from the substrate.

[0044] An interlayer dielectric layer disposed on the side of the second conductive layer away from the substrate; and

[0045] A third conductive layer is disposed on the side of the interlayer dielectric layer away from the substrate.

[0046] According to some exemplary embodiments, the filling structure further includes a portion located in at least one of the barrier layer and the buffer layer.

[0047] According to some exemplary embodiments, the first barrier dam includes at least a stacked structure consisting of a portion of each of the barrier layer, the buffer layer, and the third conductive layer; and / or, the second barrier dam includes at least a stacked structure consisting of a portion of each of the planarization layer and the pixel defining layer; and / or, the third barrier dam includes at least a stacked structure consisting of a portion of each of the planarization layer and the pixel defining layer; and / or, the fourth barrier dam includes at least a stacked structure consisting of a portion of each of the barrier layer, the buffer layer, and the third conductive layer.

[0048] According to some exemplary embodiments, the cross-section of each of the first and second blocking dams is trapezoidal, the cross-section being perpendicular to the surface of the substrate on which the first and second blocking dams are disposed, and the cross-section extending along a first direction from the opening region to the pixel region; the minimum width of the first blocking dam is 1 / 4 to 3 / 8 of the minimum width of the second blocking dam, and the maximum width of the first blocking dam is 3 / 10 to 2 / 5 of the maximum width of the second blocking dam.

[0049] According to some exemplary embodiments, the cross-section of each of the first and third blocking dams is trapezoidal, the cross-section being perpendicular to the surface of the substrate on which the first and third blocking dams are disposed, and the cross-section extending along a first direction from the opening region to the pixel region; the minimum width of the first blocking dam is 1 / 16 to 3 / 16 of the minimum width of the third blocking dam, and the maximum width of the first blocking dam is 3 / 20 to 1 / 5 of the maximum width of the third blocking dam.

[0050] According to some exemplary embodiments, the material of the organic material layer includes at least one selected from polymethyl methacrylate, polycarbonate, polystyrene, epoxy resin, polyimide, and polyethylene.

[0051] According to some exemplary embodiments, the substrate is a flexible substrate, and the display substrate further includes a back film disposed on the surface of the substrate away from the organic material layer.

[0052] In another aspect, a display device is provided, comprising a display substrate as described above.

[0053] In another aspect, a method for manufacturing a display substrate is provided, comprising the following steps:

[0054] A substrate is provided, the substrate comprising at least a pixel region and a diced region;

[0055] A functional film layer is formed on the substrate, the functional film layer including at least an inorganic material layer, a portion of the inorganic material layer having its orthographic projection on the substrate falling into the pixel region, and another portion of the inorganic material layer having its orthographic projection on the substrate covering the cutting region;

[0056] At least a portion of the inorganic material layer located in the cutting area is removed to form a groove in the cutting area of ​​the substrate.

[0057] An organic material layer is formed on the substrate.

[0058] A back film is attached to the surface of the substrate away from the functional film layer and the organic material layer; and

[0059] A cutting process is performed to form an opening, wherein the cutting line is located in the cutting area.

[0060] The step of forming an organic material layer on the substrate includes:

[0061] An organic material layer is formed on the side of the functional film layer away from the substrate, such that a portion of the organic material layer is projected onto the substrate and falls into the pixel area, while another portion of the organic material layer is projected onto the substrate and covers the cut area, thereby forming a filling structure that fills the groove.

[0062] According to some exemplary embodiments, the organic material layer includes a planarization layer.

[0063] According to some exemplary embodiments, the organic material layer includes a planarization layer and a pixel defining layer.

[0064] According to some exemplary embodiments, the manufacturing method further includes: forming a first barrier dam on the substrate, wherein the first barrier dam surrounds the cutting region.

[0065] According to some exemplary embodiments, the orthographic projection of the filling structure on the substrate does not overlap with the orthographic projection of the first blocking dam on the substrate.

[0066] According to some exemplary embodiments, the orthographic projection of the filling structure on the substrate partially overlaps with the orthographic projection of the first blocking dam on the substrate.

[0067] According to some exemplary embodiments, the orthographic projection of the filling structure on the substrate covers the orthographic projection of the first blocking dam on the substrate.

[0068] According to some exemplary embodiments, in the step of attaching a back film to the surface of the substrate on the side away from the organic material layer, pressure is applied to attach the substrate and the back film such that the portion of the substrate located in the cut region and the portion of the substrate located in the pixel region are both attached to the back film.

[0069] According to some exemplary embodiments, the step of forming a functional film layer on the substrate includes: sequentially forming a barrier layer, a buffer layer, a first conductive layer, a gate insulating layer, a second conductive layer, an interlayer dielectric layer, a third conductive layer, and a passivation layer on the substrate; and the inorganic material layer includes at least one of the barrier layer, the buffer layer, the gate insulating layer, and the interlayer dielectric layer.

[0070] According to some exemplary embodiments, in the step of forming an organic material layer on the side of the functional film layer away from the substrate, the surface of the planarization layer away from the substrate includes a first planarization layer surface portion and a second planarization layer surface portion. The orthographic projection of the first planarization layer surface portion on the substrate at least partially overlaps with the orthographic projection of the cut region on the substrate. The orthographic projection of the second planarization layer surface portion on the substrate at least partially overlaps with the orthographic projection of the first barrier dam on the substrate. The vertical distance d1 between the first planarization layer surface portions at a first position and the reference plane is less than the vertical distance d2 between the first planarization layer surface portions at a second position and the reference plane. The vertical distance d2 is less than the vertical distance d3 between the second planarization layer surface portion and the reference plane. The reference plane is the surface of the interlayer dielectric layer away from the substrate. The orthographic projection of the first position on the substrate falls within the orthographic projection of the cut region on the substrate. The orthographic projection of the second position on the substrate falls within the orthographic projection of the adjacent portion of the cut region and the first barrier dam on the substrate. The orthographic projection of the third position on the substrate falls within the orthographic projection of the first barrier dam on the substrate.

[0071] According to some exemplary embodiments, in the step of removing at least a portion of the inorganic material layer located in the cutting region, the portion of the inorganic material layer located in the cutting region is removed by an etching process.

[0072] According to some exemplary embodiments, the step of performing a cutting process to form an opening includes: performing a laser cutting process such that the trajectory of a laser projected onto the substrate falls into the groove to form an opening through the back film, the substrate, the functional film layer and the filling structure.

[0073] According to some exemplary embodiments, the slope angle of the surface portion of the first planarization layer is in the range of 10 to 18 degrees.

[0074] According to some exemplary embodiments, the difference between the vertical distance d2 and the vertical distance d1 is in the range of 100 to 300 nanometers.

[0075] According to some exemplary embodiments, the difference between the vertical distance d3 and the vertical distance d2 is in the range of 150 to 500 nanometers. Attached Figure Description

[0076] The features and advantages of this disclosure will become more apparent from a detailed description of exemplary embodiments with reference to the accompanying drawings.

[0077] Figure 1 A plan view of a display substrate according to an exemplary embodiment of the present disclosure is shown;

[0078] Figure 2 This is a flowchart of a method for manufacturing a display substrate according to some exemplary embodiments of the present disclosure;

[0079] Figures 3A-3F These are cross-sectional views of the display substrate after some steps of the manufacturing method of the display substrate according to some exemplary embodiments of this disclosure have been performed. These cross-sectional views are along... Figure 1 A cross-sectional view taken from line AA' in the middle;

[0080] Figure 4A and Figure 4B Schematic diagrams of the backing film application process in the comparative embodiments are shown respectively;

[0081] Figure 5 This is a flowchart of a method for manufacturing a display substrate according to some exemplary embodiments of the present disclosure;

[0082] Figures 6A-6E , Figure 7 and Figures 9-10 These are cross-sectional views of the display substrate after some steps of the manufacturing method of the display substrate according to some exemplary embodiments of this disclosure have been performed. These cross-sectional views are along... Figure 1 A cross-sectional view taken from line AA' in the middle;

[0083] Figure 8 yes Figure 7 A magnified view of part I in the image;

[0084] Figure 11 This is a plan view of a portion of a display substrate around an opening, according to some exemplary embodiments of the present disclosure;

[0085] Figure 12 The display substrate is along some exemplary embodiments of the present disclosure. Figure 11 A cross-sectional view taken from line BB' in the middle;

[0086] Figure 13 The display substrate is along some other exemplary embodiments of the present disclosure. Figure 11 A cross-sectional view taken from line BB' in the middle;

[0087] Figure 14A and Figure 14B These are other exemplary embodiments of the display substrate described in this disclosure. Figure 11 The cross-sectional view taken from line BB' in the diagram is for clarity. Figure 14A and Figure 14B Only the structure located on one side of the opening is shown;

[0088] Figure 15A and Figure 15B These are plan views of the openings and multiple first barrier dams included in a display substrate according to some exemplary embodiments of the present disclosure;

[0089] Figure 16 This is a partial plan view of a display substrate around an opening according to some exemplary embodiments of the present disclosure;

[0090] Figure 17 The display substrate is along some exemplary embodiments of the present disclosure. Figure 16 A cross-sectional view taken from line CC' in the diagram;

[0091] Figure 18 yes Figure 17 A magnified view of part I;

[0092] Figure 19 yes Figure 17 A magnified view of part II;

[0093] Figure 20 yes Figure 17 A magnified view of part III;

[0094] Figure 21 This is a FIB (Focused Ion Beam) pattern of a display substrate according to some exemplary embodiments of the present disclosure;

[0095] Figure 22 This is a FIB (Focused Ion Beam) pattern of a display substrate according to some exemplary embodiments of the present disclosure; and

[0096] Figure 23 This is a schematic diagram of the structure of a display device according to some exemplary embodiments of the present disclosure. Detailed Implementation

[0097] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are within the protection scope of this disclosure.

[0098] It should be noted that, for clarity and / or descriptive purposes, the dimensions and relative dimensions of components may be enlarged in the accompanying drawings. Therefore, the dimensions and relative dimensions of the individual components are not necessarily limited to those shown in the drawings. In the specification and accompanying drawings, the same or similar reference numerals indicate the same or similar parts.

[0099] When an element is described as being "on" another element, "connected to" another element, or "attached to" another element, the element may be directly on, directly connected to, or directly attached to the other element, or there may be intermediate elements. However, when an element is described as being "directly on" another element, "directly connected to" another element, or "directly attached to" another element, there are no intermediate elements. Other terms and / or expressions used to describe relationships between elements should be interpreted in a similar manner, such as "between" versus "directly between," "adjacent" versus "directly adjacent," or "on" versus "directly on," etc. Furthermore, the term "connection" can refer to a physical connection, an electrical connection, a communication connection, and / or a fluid connection. Moreover, the X-axis, Y-axis, and Z-axis are not limited to the three axes of a Cartesian coordinate system and can be interpreted in a broader sense. For example, the X-axis, Y-axis, and Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purposes of this disclosure, “at least one of X, Y, and Z” and “at least one selected from the group consisting of X, Y, and Z” can be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z such as XYZ, XYY, YZ, and ZZ. As used herein, the term “and / or” includes any and all combinations of one or more of the listed related items.

[0100] It should be noted that although the terms "first," "second," etc., may be used herein to describe various components, members, elements, regions, layers, and / or parts, these components, members, elements, regions, layers, and / or parts should not be limited by these terms. Rather, these terms are used to distinguish one component, member, element, region, layer, and / or part from another. Thus, for example, the first component, first member, first element, first region, first layer, and / or first part discussed below may be referred to as a second component, second member, second element, second region, second layer, and / or second part without departing from the teachings of this disclosure.

[0101] For ease of description, spatial relation terms, such as “above,” “below,” “left,” “right,” etc., may be used herein to describe the relationship between one element or feature and another element or feature as shown in the figure. It should be understood that spatial relation terms are intended to cover other orientations of the device in use or operation besides those described in the figure. For example, if the device in the figure were inverted, an element described as “below” or “under” other elements or features would be oriented “above” or “on top” other elements or features.

[0102] In this document, unless otherwise specified, the terms “basically,” “substantially,” “about,” “approximately,” “approximately,” and other similar terms are used as terms of approximation rather than as terms of degree, and they are intended to account for inherent deviations in measured or calculated values ​​that would be recognized by one of ordinary skill in the art. Taking into account actual process errors, measurement problems, and errors associated with the measurement of a particular quantity (i.e., limitations of the measurement system), as used herein, “basically,” “substantially,” “about,” “approximately,” and “approximately” include stated values ​​and indicate that a particular value is within an acceptable range of deviation for one of ordinary skill in the art. For example, “basically,” “substantially,” “about,” “approximately,” and “approximately” may indicate within one or more standard deviations, or within ±10% or ±5% of the stated value.

[0103] In this document, unless otherwise stated, the term "same layer" means that two layers, parts, components, elements or portions can be formed by the same patterning process, and that the two layers, parts, components, elements or portions are generally formed of the same material.

[0104] In this article, unless otherwise stated, the term "patterning process" generally includes steps such as photoresist coating, exposure, development, etching, and photoresist stripping. The term "one-step patterning process" refers to the process of forming patterned layers, components, and parts using a single photomask.

[0105] This disclosure provides a display substrate and a method for manufacturing the same. The display substrate includes: a substrate including at least a pixel region and an opening region; a plurality of sub-pixels disposed on the substrate, the plurality of sub-pixels being located in the pixel region; an opening located in the opening region; a first barrier dam disposed between the sub-pixels and the opening, and at least partially surrounding the opening; an organic material layer whose orthographic projection on the substrate falls into the pixel region, the organic material layer including at least one film layer; and a filling structure, at least a portion of the filling structure being disposed between the opening and the first barrier dam, wherein the filling structure and at least one film layer of the organic material layer are located in the same layer, and the filling structure and at least one film layer of the organic material layer include the same material. The method for manufacturing the display substrate includes the following steps: providing a substrate, the substrate including at least a pixel region and a dicing region; forming a functional film layer on the substrate, the functional film layer including at least an inorganic material layer, a portion of the inorganic material layer having its orthographic projection on the substrate falling into the pixel region, and another portion of the inorganic material layer having its orthographic projection on the substrate covering the dicing region; removing at least a portion of the inorganic material layer located in the dicing region to form a groove in the dicing region of the substrate; forming an organic material layer on the substrate; attaching a back film to the surface of the substrate on the side away from the functional film layer and the organic material layer; and performing a dicing process to form an opening, wherein the dicing process has a dicing line located in the dicing region, wherein the step of forming the organic material layer on the substrate includes: forming an organic material layer on the side of the functional film layer away from the substrate, such that a portion of the organic material layer has its orthographic projection on the substrate falling into the pixel region, and another portion of the organic material layer having its orthographic projection on the substrate covering the dicing region, thereby forming a filling structure that fills the groove.

[0106] In the above-mentioned display substrate and its manufacturing method, by filling the groove with the organic material layer, it can be ensured that no air bubbles are generated during the application of the back film. Therefore, during the cutting process, the phenomenon of cutting cracks in the film layer in the pixel area and / or separation of the film layer in the pixel area is avoided, thereby improving the product yield.

[0107] Figure 1 A plan view of a display substrate according to an exemplary embodiment of the present disclosure is shown. For example, the display substrate may be an electroluminescent display substrate, such as an OLED display substrate. As another example, the display substrate may be a flexible display substrate.

[0108] like Figure 1As shown, the display substrate includes a display area AA and at least one opening 10 located in the display area AA. Figure 1 The illustration uses two openings 10 as an example. It should be understood that the embodiments disclosed herein are not limited to this. In other embodiments, fewer (e.g., one) or more openings 10 may be provided.

[0109] It should be noted that the "opening" mentioned in this document refers to an area on the display substrate used to mount hardware structures. For ease of explanation, it is referred to as an opening, but the opening includes, but is not limited to, the following forms: through holes, grooves, openings, etc. Optionally, the hardware structure may include one or more of the following structures: a front-facing camera, a home button, an earpiece, or a speaker. The specific mounting method of the hardware structure is not particularly limited in the embodiments disclosed herein. In addition, the shape of the opening can be determined according to the shape of the hardware structure to be mounted. For example, the cross-section of the opening in the direction parallel to the substrate of the display substrate may have one or more of the following shapes: circular, elliptical, rectangular, rounded rectangle, square, rhombus, trapezoid, etc.

[0110] In the embodiments of this disclosure, by setting an opening in the display area and installing hardware structures such as cameras in the opening, functions such as under-display cameras can be realized, thereby increasing the screen ratio and achieving a full-screen effect.

[0111] For example, to form the aforementioned opening 10, a through-hole in the display substrate can be formed using a cutting process such as laser cutting. During laser cutting, a laser beam needs to be projected onto the display substrate; in some embodiments, the laser also needs to move relative to the display substrate, and the trajectory of the laser beam projected onto the display substrate forms a cutting line or kerf. It should be understood that the cutting line or kerf can run along the outer periphery 10S of the opening 10 (e.g., ...). Figure 1 (As shown) extension.

[0112] It should be noted that, for ease of description, in this article, the area where the opening 10 is located can be referred to as the opening area, the display area AA excluding the opening 10 can be referred to as the pixel area, and the area where the cutting line or cutting channel is located can be referred to as the cutting area. (Refer to...) Figure 1 The pixel region may have multiple sub-pixels SP, for example, the sub-pixels SP may include red sub-pixels, green sub-pixels and blue sub-pixels.

[0113] Figure 2 This is a flowchart illustrating a method for manufacturing a display substrate according to some exemplary embodiments of the present disclosure. Figures 3A-3F These are cross-sectional views of the display substrate after some steps of the manufacturing method of the display substrate according to some exemplary embodiments of this disclosure have been performed. These cross-sectional views are along... Figure 1 The cross-sectional view taken from line AA' in the diagram. (Refer to reference...) Figure 2 as well as Figures 3A-3F The manufacturing method may include steps S101 to S105.

[0114] Reference Figure 3A In step S101, a functional film layer is formed on the substrate 1.

[0115] Prior to step S101, the manufacturing method may include the step of providing a substrate 1.

[0116] For example, the substrate 1 may be a flexible substrate, and the materials constituting the flexible substrate include, but are not limited to, polyimide (PI), polyethylene terephthalate (PET), polycarbonate, polyethylene, polyacrylate, polyetherimide, or polyethersulfone.

[0117] Combined with reference Figure 1 and Figure 3A The substrate 1 may include a display area AA, which may include a pixel area A1 and an opening area H1 for forming an opening. As described above, a cutting area C1 is formed on the outer periphery of the opening area H1, and the cutting line or cutting path is located in the cutting area C1. It should be understood that the orthographic projection of the cutting area C1 onto the substrate 1 is a closed shape, for example, a circle (or annulus).

[0118] In some exemplary embodiments, such as Figure 3A As shown, the functional film layer may include at least an inorganic material layer 2. This inorganic material layer 2 covers the display area AA, that is, it covers the pixel area A1, the opening area H1, and the cutting area C1. In other words, the orthographic projection of a portion of the inorganic material layer 2 onto the substrate 1 falls into the pixel area A1, and the orthographic projection of another portion of the inorganic material layer 2 onto the substrate 1 covers the cutting area C1.

[0119] It should be noted that the inorganic material layer 2 may include a single inorganic material layer composed of inorganic insulating material, but the embodiments of this disclosure are not limited thereto. The inorganic material layer 2 may also include a stack of multiple inorganic material layers composed of inorganic insulating material.

[0120] Reference Figure 3B In step S102, at least a portion of the inorganic material layer 2 located in the cutting region C1 is removed. This forms a groove 80 at the cutting region C1 of the substrate 1.

[0121] It should be understood that the orthographic projection of the groove 80 onto the substrate 1 is a closed shape, such as a circle, a rectangle, or the like. The area enclosed by the groove 80 is the opening to be formed.

[0122] For example, the portion of the inorganic material layer 2 located in the cutting region C1 can be removed by an etching process.

[0123] The inventors discovered that inorganic materials (especially inorganic insulating materials) typically have poor flexibility, making them prone to cracking during cutting. In the embodiments of this disclosure, a portion of the inorganic material layer located in the cutting area is removed. This reduces the risk of cracking in the inorganic material layer during subsequent cutting to form openings and prevents cracks from extending along the inorganic material layer towards the pixel area. Therefore, the risk of film layer cracking in the pixel area can be reduced or avoided, thereby improving product yield.

[0124] Reference Figure 3C In step S103, an organic material layer 3 is formed on the substrate 1, and at least a portion of the organic material layer 3 fills the groove 80.

[0125] For example, the organic material layer 3 covers the display area AA, that is, it covers the pixel area A1 and the opening area H1. For example, the organic material layer 3 covers the pixel area A1 and the cutting area C1. That is, a portion of the organic material layer 3 is projected onto the substrate 1 and falls into the pixel area A1, while another portion of the organic material layer 3 is projected onto the substrate 1 and covers the cutting area C1.

[0126] It should be noted that, Figure 3C The diagram schematically shows that the organic material layer 3 extends continuously over the pixel region A1 and the aperture region H1. However, this should not be construed as a limitation on the embodiments of this disclosure. It should be understood that the portion of the organic material layer 3 in the pixel region A1 and the portion of the organic material layer 3 in the aperture region H1 may be disconnected.

[0127] In embodiments of this disclosure, the organic material layer 3 is filled in the groove 80, such that the surface of the organic material layer 3 away from the substrate 1 includes a first surface portion 31 located in the dicing region C1 and a second surface portion 32 located in the pixel region A1. The first surface portion 31 and the second surface portion 32 can be substantially flush, that is, the vertical distance between the first surface portion 31 and the substrate 1 is substantially equal to the vertical distance between the second surface portion 32 and the substrate 1. It should be understood that the second surface portion 32 here should be understood as a portion of the upper surface of the film layer located at the top of the pixel region A1.

[0128] In this way, by filling the cutting area C1 with the organic material layer 3, the thickness difference of the film layer between the cutting area and the pixel area caused by the groove 80 can be filled, which is beneficial to the subsequent processing technology.

[0129] Reference Figure 3D In step S104, a back film 4 is attached to the surface of the substrate 1 away from the organic material layer 3.

[0130] For example, the back film 4 may include, but is not limited to, polyimide (PI) material to enhance the strength of the substrate 1, thereby providing better support for the various film layers on the substrate 1.

[0131] Figure 4A and Figure 4B Schematic diagrams illustrating the backing film application process in the comparative embodiments are shown respectively. Figure 4A and Figure 4B In the illustrated embodiment, after the groove 80' is formed, the groove 80' is not filled with an organic material layer, that is, the above step S103 is not performed.

[0132] Reference Figure 4A The substrate 1' with groove 80' and the back film 4 are attached. It should be understood that the groove 80' makes the thickness of the film layer (e.g., inorganic material layer 2) in the cut area C1 of the substrate 1' less than the thickness of the film layer (e.g., inorganic material layer 2) in the pixel area A1 of the substrate 1', that is, the film layer in the cut area C1 of the substrate 1' is thinner.

[0133] Reference Figure 4B During the bonding process, a certain bonding pressure needs to be applied to ensure that the substrate 1' and the back film 4 are well bonded together. Under this bonding pressure, the thinner part of the film (i.e., in the cutting area C1) will move away from the back film 4, thereby generating bubbles P4 in the cutting area C1.

[0134] During the subsequent laser cutting process, when the laser acts on the cutting area C1, the temperature of the cutting area C1 will rise sharply, and the air in the bubble P4 will also expand rapidly, causing the film layer in the pixel area to produce cutting cracks, and / or causing the film layers in the pixel area to separate from each other, thus seriously affecting the product yield.

[0135] Return to reference Figure 3DThe groove 80 is filled with an organic material layer 3. The thickness of each film layer in the cutting area C1 of the substrate 1 is relatively large. This avoids the generation of air bubbles in the cutting area C1 during the bonding process of the substrate 1 and the back film 4. Since no air bubbles are generated during the bonding process of the back film, the phenomenon of cutting cracks in the film layers in the pixel area and / or separation of the film layers in the pixel area is avoided, thereby improving the product yield.

[0136] Combined with reference Figure 3E and Figure 3F In step S105, the opening 10 is formed by a cutting process.

[0137] For example, the opening 10 can be formed using a laser cutting process. (See reference...) Figure 3E Laser L is projected onto the cutting area C1. To form a circular opening 10, reference is used. Figure 1 and Figure 3E The cutting area C1 can be circular, and the laser L can move relative to the substrate 1 to form a circular trace corresponding to the cutting area C1. In this way, an opening 10 can be formed that penetrates the back film 4, the substrate 1, and the film layers thereon, such as... Figure 3F As shown.

[0138] Since no air bubbles are generated during the application of the backing film, the phenomenon of cutting cracks and / or separation of film layers in the pixel area is avoided during the cutting process, thereby improving product yield.

[0139] The embodiments of this disclosure will now be described in detail using an organic light-emitting diode (OLED) flexible display substrate as an example. It should be understood that the electroluminescent devices in the embodiments of this disclosure are not limited to OLED devices; they may include other types of electroluminescent devices, such as QLED devices.

[0140] Figure 5 This is a flowchart of a method for manufacturing a display substrate according to some exemplary embodiments of the present disclosure. Figures 6A-6E , Figure 7 and Figures 9-10 These are cross-sectional views of the display substrate after some steps of the manufacturing method of the display substrate according to some exemplary embodiments of this disclosure have been performed. These cross-sectional views are along... Figure 1 The cross-sectional view taken from line AA' in the diagram. Figure 8 yes Figure 7 A magnified view of part I in the image. (Refer to reference.) Figure 5 as well as Figures 6A-6E , Figure 7 and Figures 9-10 The manufacturing method may include steps S201 to S205.

[0141] Reference Figure 6A In step S201, a functional film layer is formed on the substrate 1.

[0142] For example, the functional film layer may include a barrier layer 21 and a buffer layer 22. Each of the barrier layer 21 and the buffer layer 22 may include an inorganic insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, or other silicon oxides, silicon nitrides, or silicon oxynitrides, or an insulating material including a metallic element, such as aluminum oxide or titanium nitride. For example, the barrier layer 21 and the buffer layer 22 may be formed using processes such as chemical vapor deposition.

[0143] For example, the functional film layer may further include a driving circuit layer, which includes thin-film transistors for driving the light-emitting device to emit light.

[0144] Here, taking a top-gate TFT as an example, the embodiments of this disclosure will be further described in detail. (Refer to...) Figure 6A The driving circuit layer may include: an active layer ACT disposed on a substrate 1; a gate insulating layer 23 disposed on the side of the active layer ACT away from the substrate 1; a gate G disposed on the side of the gate insulating layer 23 away from the substrate 1; an interlayer dielectric layer 24 disposed on the side of the gate G away from the substrate 1 and covering the gate G; and a first conductive layer disposed on the side of the interlayer dielectric layer 24 away from the substrate 1. The first conductive layer may include the source S and drain D of a thin-film transistor and conductive plugs SH and DH formed in vias in the interlayer dielectric layer 24. The source S and drain D of the thin-film transistor are electrically connected to the active layer ACT through their respective conductive plugs SH and DH.

[0145] Each of the gate insulating layer 23 and the interlayer dielectric layer 24 may include an inorganic insulating material, such as silicon oxide, silicon nitride, silicon oxynitride, or silicon oxide, or an insulating material including a metallic element, such as aluminum oxide or titanium nitride.

[0146] Thus, in some exemplary embodiments, the inorganic material layer 2 of the functional film layer may include at least one of a barrier layer 21, a buffer layer 22, a gate insulating layer 23, and an interlayer dielectric layer 24. For example, the inorganic material layer 2 may include all four of the following: barrier layer 21, buffer layer 22, gate insulating layer 23, and interlayer dielectric layer 24; or, the inorganic material layer 2 may include both the gate insulating layer 23 and the interlayer dielectric layer 24. That is, a portion of the orthographic projection of each of the barrier layer 21, buffer layer 22, gate insulating layer 23, and interlayer dielectric layer 24 onto the substrate 1 falls into the pixel region A1, and another portion of the orthographic projection onto the substrate 1 covers the cut region C1.

[0147] For example, the functional film layer includes: a first conductive layer 61 disposed on the substrate 1; a gate insulating layer 23 disposed on the side of the first conductive layer away from the substrate; a second conductive layer 62 disposed on the side of the gate insulating layer away from the substrate; an interlayer dielectric layer 24 disposed on the side of the second conductive layer away from the substrate; and a third conductive layer 63 disposed on the side of the interlayer dielectric layer away from the substrate. The gate G of the thin-film transistor can be located in the first conductive layer 61, that is, the first conductive layer 61 and the gate G can be formed of the same material and through the same patterning process. The source S and drain D of the thin-film transistor can be located in the third conductive layer 63, that is, the third conductive layer 63, the source S, and the drain D can be formed of the same material and through the same patterning process. It should be understood that the second conductive layer 62 can be formed of the gate conductive material.

[0148] In step S201, while forming the functional film layer, a first barrier dam 40 can be formed on the substrate 1. For example, the first barrier dam 40 surrounds the cut region C1 or the opening region H1. For example, the first barrier dam 40 can be disposed around the circumference of the cut region C1 or the opening region H1, that is, it completely surrounds the cut region C1 or the opening region H1. However, the embodiments of this disclosure are not limited to this, and the first barrier dam 40 can partially surround the cut region C1 or the opening region H1. That is, in the embodiments of this disclosure, the first barrier dam 40 can at least partially surround the cut region C1 or the opening region H1.

[0149] For example, the first barrier dam 40 includes a stacked structure consisting of a portion of each of the first conductive layer 61, the gate insulating layer 23, the second conductive layer 62, the interlayer dielectric layer 24, and the third conductive layer 63.

[0150] Reference Figure 6B In step S202, at least a portion of the inorganic material layer 2 located in the cutting region C1 is removed. This forms a groove 80 at the cutting region C1 of the substrate 1.

[0151] For example, the portion of the inorganic material layer 2 located in the cutting region C1 can be removed by an etching process.

[0152] exist Figure 6B In the illustrated embodiment, a portion of each of the gate insulating layer 23 and the interlayer dielectric layer 24 located in the cut region C1 can be removed by an etching process to form a groove 80. However, the embodiments of this disclosure are not limited to this; for example, a portion of each of the barrier layer 21, the buffer layer 22, the gate insulating layer 23, and the interlayer dielectric layer 24 located in the cut region C1 can be removed by an etching process to form a groove 80.

[0153] It should be noted that in the above embodiments, the first conductive layer including the source S and drain D of the thin-film transistor is formed in step S201, that is, before the formation of the groove 80. However, the embodiments of this disclosure are not limited to this, and the above-mentioned first conductive layer including the source S and drain D of the thin-film transistor can also be formed after step S202, that is, after the formation of the groove 80.

[0154] Reference Figure 6C In step S203, an organic material layer 3 is formed on the substrate 1, and at least a portion of the organic material layer 3 fills the groove 80.

[0155] In some exemplary embodiments of this disclosure, the organic material layer 3 may include a planarization layer 33. Specifically, in step S203, a planarization layer 33 is formed on the side of the first conductive layer away from the substrate 1. The planarization layer 33 covers the pixel region A1, the aperture region H1, and the cut region C1. That is, the orthographic projection of a portion of the planarization layer 33 onto the substrate 1 falls into the pixel region A1, and the orthographic projection of another portion of the planarization layer 33 onto the substrate 1 covers the cut region C1. Thus, the portion of the planarization layer 33 located in the pixel region A1 can planarize the film structure in the pixel region A1, and the portion of the planarization layer 33 located in the aperture region H1 can form a filling structure 50'.

[0156] In some exemplary embodiments of this disclosure, reference is made to Figure 7 The organic material layer 3 may include a planarization layer 33 and a pixel definition layer 34.

[0157] Specifically, in step S201, the first barrier dam 40 formed may include a stacked structure consisting of a portion of each of the first conductive layer 61, the gate insulating layer 23, the second conductive layer 62, the interlayer dielectric layer 24, the third conductive layer 63, and the passivation layer 64.

[0158] In step S203, a planarization layer 33 and a pixel defining layer 34 are formed on the side of the first conductive layer away from the substrate 1. The planarization layer 33 and the pixel defining layer 34 cover the pixel region A1, the aperture region H1, and the cut region C1. That is, a portion of each of the planarization layer 33 and the pixel defining layer 34 is projected onto the substrate 1 into the pixel region A1, and another portion of each of the planarization layer 33 and the pixel defining layer 34 is projected onto the substrate 1 into the cut region C1. Thus, the portions of the planarization layer 33 and the pixel defining layer 34 located in the pixel region A1 can planarize the film structure in the pixel region A1, and the portions of the planarization layer 33 and the pixel defining layer 34 located in the aperture region H1 can form a filling structure 50'.

[0159] Figure 8 for Figure 7 A magnified view of part I in the image. (Refer to reference.) Figure 7 and Figure 8 The inventors discovered through research that, in step S203, after forming a planarization layer 33 on the side of the first conductive layer away from the substrate 1, a portion of the planarization layer 33 fills the groove 80, and the planarization layer 33 is away from the surface of the substrate 1. Figure 8 The upper surface (in the image) may be a downwardly sloping surface or a downwardly concave curved surface. For example, refer to... Figure 8 For a certain model of product manufactured in actual process, the vertical distance d1 between the first surface portion 331 at the first position and the reference plane is approximately 1256 nanometers, the vertical distance d2 between the first surface portion 331 at the second position and the reference plane is approximately 1415 nanometers, and the vertical distance d3 between the second surface portion 332 and the reference plane is approximately 1598 nanometers. For example, the reference plane can be the upper surface of the interlayer dielectric layer 24 or the passivation layer 64. In an exemplary embodiment, the reference plane can be the upper surface of the interlayer dielectric layer 24 (i.e., the surface away from the substrate 1), the first surface portion 331 and the second surface portion 332 are respectively a part of the upper surface of the planarization layer 33, wherein the first surface portion 331 is the part of the upper surface of the planarization layer 33 near the cutting region C1, and the second surface portion 332 is the part of the upper surface of the planarization layer 33 near the first barrier dam 40. For example, the orthographic projection of the first surface portion 331 on the substrate 1 at least partially overlaps with the orthographic projection of the cutting region C1 on the substrate 1, and the orthographic projection of the second surface portion 332 on the substrate 1 at least partially overlaps with the orthographic projection of the first barrier dam 40 on the substrate 1. For example, the orthographic projection of the first surface portion 331 on the substrate 1 falls within the orthographic projection of the cutting region C1 on the substrate 1, and the orthographic projection of the second surface portion 332 on the substrate 1 falls within the orthographic projection of the first barrier dam 40 on the substrate 1. (Refer to...) Figure 8 The first position can be located in the cutting area C1, the second position can be located at the adjacent portion of the cutting area C1 and the first blocking dam 40, and the third position can be located in the area where the first blocking dam 40 is located. That is, the orthographic projection of the first position on the substrate 1 falls within the orthographic projection of the cutting area C1 on the substrate 1, the orthographic projection of the second position on the substrate 1 falls within the orthographic projection of the adjacent portion of the cutting area C1 and the first blocking dam 40 on the substrate 1, and the orthographic projection of the third position on the substrate 1 falls within the orthographic projection of the first blocking dam 40 on the substrate 1. Figure 8As shown, the first surface portion 331 is formed as a downwardly sloping surface or a downwardly concave arcuate surface. For example, the slope angle of the first surface portion 331 can be in the range of 10 to 18 degrees. Optionally, the vertical distance d1 is smaller than the vertical distance d2. For example, the difference between the vertical distance d2 and the vertical distance d1 can be in the range of 100 to 300 nanometers. Optionally, the vertical distance d2 is smaller than the vertical distance d3. For example, the difference between the vertical distance d3 and the vertical distance d2 can be in the range of 150 to 500 nanometers. Thus, the flatness of the upper surface of the planarization layer 33 located in the cutting region C1 needs to be further improved.

[0160] In the embodiments of this disclosure, in step S203, a pixel defining layer 34 is further formed on the planarization layer 33, such that the orthographic projection of a portion of the pixel defining layer 34 onto the substrate 1 falls into the pixel region A1, and the orthographic projection of another portion of the pixel defining layer 34 onto the substrate 1 covers the cutting region C1. This arrangement further improves the flatness of the upper surface of the filling structure 50', thereby further ensuring that the risk of air bubbles being generated in the cutting region during the subsequent back film attachment process is avoided. In other words, by providing a stacked structure of multiple organic material layers in the cutting region, the generation of air bubbles can be further guaranteed, thereby improving product yield.

[0161] In exemplary embodiments of this disclosure, the planarization layer 33 and the pixel defining layer 34 are both made of organic materials, such as at least one of polymethyl methacrylate, polycarbonate, polystyrene, epoxy resin, polyimide, and polyethylene.

[0162] Optionally, in embodiments of this disclosure, the manufacturing method may further include the steps of forming various film layers and encapsulation structures of an OLED device. For example, the various film layers of the OLED device may include an anode layer, a light-emitting material layer, and a cathode layer, and the encapsulation structure may include a stacked structure formed by an inorganic encapsulation layer, an organic encapsulation layer, and an inorganic encapsulation layer. The anode layer may be formed on the planarization layer before the pixel defining layer is formed, and the light-emitting material layer, the cathode layer, and the encapsulation structure may be formed after the pixel defining layer is formed. Embodiments of this disclosure are not limited thereto, and known processes for forming various film layers and encapsulation structures of OLED devices can be used in embodiments of this disclosure.

[0163] Reference Figure 6D and Figure 9 In step S204, a back film 4 is attached to the surface of the substrate 1 away from the organic material layer 3.

[0164] For example, the back film 4 may include, but is not limited to, polyimide (PI) material to enhance the strength of the substrate 1, thereby providing better support for the various film layers on the substrate 1.

[0165] Reference Figure 6D and Figure 9 The groove 80 is filled with an organic material layer 3 comprising either a planarization layer 33 or both a planarization layer 33 and a pixel defining layer 34, resulting in a larger thickness of each film layer in the cutting area C1 of the substrate 1. This avoids the formation of air bubbles in the cutting area C1 during the bonding process between the substrate 1 and the back film 4. Since no air bubbles are generated during the bonding process, cutting cracks and / or separation of film layers in the pixel area are avoided, thereby improving product yield.

[0166] Reference Figure 6E and Figure 10 In step S205, an opening is formed by a cutting process.

[0167] For example, in conjunction with reference Figure 1 The opening 10 can be formed using laser cutting technology. (Refer to...) Figure 6E and Figure 10 Laser L is projected onto the cutting area C1. To form a circular opening 10, reference is used. Figure 1 The cutting area C1 can be circular, and the laser L can move relative to the substrate 1 to form a circular trace. Figure 6E The dashed line corresponding to the laser L schematically represents a portion of the cutting trace, and this circular trace corresponds to the cutting area C1. In this way, an opening 10 can be formed that penetrates the back film 4, the substrate 1, and the films thereon. It should be understood that a portion of the filling structure 50' located outside the cutting trace is retained, forming a structure surrounding the opening 10.

[0168] It should be noted that, in the embodiments of this disclosure, the “outer side” of the cutting trace can refer to the side of the cutting trace that is close to the pixel region A1.

[0169] Since no air bubbles are generated during the application of the backing film, the phenomenon of cutting cracks and / or separation of film layers in the pixel area is avoided during the cutting process, thereby improving product yield.

[0170] It should be noted that some steps in the above method can be executed individually or in combination, and can be executed in parallel or sequentially, and are not limited to the specific order of operations shown in the figure.

[0171] Some exemplary embodiments of this disclosure also provide a display substrate, see reference 1 Figure 1The diagram schematically illustrates a plan view of the display substrate, which is manufactured according to the manufacturing method described in any of the above embodiments. For example, the display substrate may be an OLED display substrate.

[0172] Figure 11 This is a plan view of a display substrate around an opening, according to some exemplary embodiments of the present disclosure. Figure 12 The display substrate is along some exemplary embodiments of the present disclosure. Figure 11 The cross-sectional view taken from line BB' in the diagram. Figure 13 The display substrate is along some other exemplary embodiments of the present disclosure. Figure 11 The cross-sectional view taken from line BB' in the diagram.

[0173] Combined with reference Figure 1 , Figures 10 to 13 The display substrate 100 may include: a substrate 1, the substrate including at least a pixel region A1 and an opening region H1; a plurality of sub-pixels SP disposed on the substrate 1, the plurality of sub-pixels SP being located in the pixel region A1; an opening 10 located in the opening region H1; a first barrier dam 40 disposed between the sub-pixel SP and the opening 10, and surrounding the opening 10; an organic material layer 3, the orthographic projection of the organic material layer 3 on the substrate 1 falling into the pixel region A1; and a filling structure 50, at least a portion of the filling structure 50 being disposed between the opening 10 and the first barrier dam 40.

[0174] As described above, the filling structure 50 and the organic material layer 3 can be formed using the same patterning process. Thus, as... Figure 12 As shown, the filling structure 50 and the organic material layer 3 are located in the same layer, and the filling structure 50 and the organic material layer 3 comprise the same material.

[0175] It should be noted that the display substrate 100 may include a plurality of first barrier dams 40 located between the sub-pixel SP and the opening 10. (Refer to...) Figure 15A and Figure 15B The diagram schematically illustrates some exemplary embodiments of the opening 10 and a plurality of first barrier dams 40. As described above, the orthographic projection of the opening 10 onto the substrate can have various shapes, including but not limited to circles, ellipses, rectangles, rounded rectangles, squares, rhombuses, trapezoids, etc. For example, in Figure 15A In this design, the orthographic projection of the opening 10 onto the substrate is rectangular, and multiple (e.g., three) first blocking dams 40 are provided. Optionally, the multiple first blocking dams 40 may completely surround the opening 10. Figure 15BThe device includes two openings 10. One opening has a rectangular orthographic projection on the substrate, and the other opening has a circular orthographic projection on the substrate. The combined orthographic projection of the two openings on the substrate is racetrack-like. Multiple (e.g., two) first blocking dams 40 are provided. Optionally, the multiple first blocking dams 40 may surround the combined two openings.

[0176] Optionally, except for the first barrier closest to the opening 10, the other first barrier dams are not covered with organic material; that is, the other first barrier dams are not covered by either the organic material layer 3 or the filling structure 50. In this way, the organic material layer 3 and the filling structure 50 are separated along the radial direction of the opening 10.

[0177] It should be noted that in this article, the terms "radial" or "radial direction" can refer to the direction from the center of the aperture to the sub-pixel SP. For example, when the aperture is circular, the center of the aperture can be the center of the circle; when the aperture is rectangular, the center of the aperture can be the intersection of the two diagonals.

[0178] Optionally, refer to Figure 12 The filling structure 50 includes a single filling film layer, and the organic material layer 3 includes a planarization layer 33. The filling film layer 50 and the planarization layer 33 are located in the same layer, and the filling film layer 50 and the planarization layer 33 comprise the same material. That is, the filling film layer 50 and the planarization layer 33 are formed by the same patterning process.

[0179] Optionally, refer to Figure 13 The filling structure 50 includes a first filling film layer 501 and a second filling film layer 502, and the organic material layer includes a planarization layer 33 and a pixel defining layer 34. The first filling film layer 501 and the planarization layer 33 are located on the same layer, and both are made of the same material. That is, the first filling film layer 501 and the planarization layer 33 are formed using the same patterning process. The second filling film layer 502 and the pixel defining layer 34 are located on the same layer, and both are made of the same material. That is, the second filling film layer 502 and the pixel defining layer 34 are formed using the same patterning process.

[0180] For example, the display substrate 100 further includes a functional film layer 6 disposed on the side of the organic material layer 3 near the substrate 1. For example, the functional film layer 6 may include: a first conductive layer 61 disposed on the substrate 1; a gate insulating layer 23 disposed on the side of the first conductive layer 61 away from the substrate 1; a second conductive layer 62 disposed on the side of the gate insulating layer 23 away from the substrate 1; an interlayer dielectric layer 24 disposed on the side of the second conductive layer 62 away from the substrate 1; a third conductive layer 63 disposed on the side of the interlayer dielectric layer 24 away from the substrate 1; and a passivation layer 64 disposed on the side of the third conductive layer 63 away from the substrate 1.

[0181] Combined with reference Figure 10 , Figure 12 and Figure 13 The gate G of the thin-film transistor can be located in the first conductive layer 61, that is, the first conductive layer 61 can be formed of the conductive material forming the gate G. The source S and drain D of the thin-film transistor can be located in the third conductive layer 63, that is, the third conductive layer 63 can be formed of the conductive material forming the source S and drain D. It should be noted that the second conductive layer 62 can also be formed of the gate conductive material.

[0182] For example, in Figure 12 In the illustrated embodiment, the first barrier dam 40 comprises a stacked structure consisting of a portion of each of the first conductive layer 61, the gate insulating layer 23, the second conductive layer 62, the interlayer dielectric layer 24, and the third conductive layer 63. Figure 13 In the illustrated embodiment, the first barrier dam 40 comprises a stacked structure consisting of a portion of each of the first conductive layer 61, the gate insulating layer 23, the second conductive layer 62, the interlayer dielectric layer 24, the third conductive layer 63, and the passivation layer 64. By providing the first barrier dam, cracks generated during the cutting process to form an opening can be prevented from extending to components in the pixel area, thereby avoiding impact on components in the pixel area.

[0183] Optionally, the first barrier dam 40 has a trapezoidal cross-section parallel to the radial direction of the opening. Specifically, the orthographic projection of the portion of the passivation layer 64 constituting the first barrier dam 40 on the substrate 1 falls within the orthographic projection of the portion of the third conductive layer 63 constituting the first barrier dam 40 on the substrate 1; the orthographic projection of the portion of the third conductive layer 63 constituting the first barrier dam 40 on the substrate 1 falls within the orthographic projection of the portion of the interlayer dielectric layer 24 constituting the first barrier dam 40 on the substrate 1; the orthographic projection of the portion of the interlayer dielectric layer 24 constituting the first barrier dam 40 on the substrate 1 falls within the orthographic projection of the portion of the second conductive layer 62 constituting the first barrier dam 40 on the substrate 1; the orthographic projection of the portion of the second conductive layer 62 constituting the first barrier dam 40 on the substrate 1 falls within the orthographic projection of the portion of the gate insulating layer 23 constituting the first barrier dam 40 on the substrate 1; and the orthographic projection of the portion of the gate insulating layer 23 constituting the first barrier dam 40 on the substrate 1 falls within the orthographic projection of the portion of the first conductive layer 61 constituting the first barrier dam 40 on the substrate 1.

[0184] Optionally, such as Figure 12 As shown, the orthographic projection of the filling structure 50 on the substrate 1 does not overlap with the orthographic projection of the first barrier dam 40 on the substrate 1. That is, the filling structure 50 terminates at the side of the first barrier dam 40 near the opening 10.

[0185] Optionally, such as Figure 13 As shown, the passivation layer 64 includes a side portion 641 located on the first barrier dam 40, that is, the orthographic projection of the side portion 641 on the substrate 1 falls within the orthographic projection of the first barrier dam 40 on the substrate 1. Optionally, the orthographic projection of the side portion 641 on the substrate 1 is located approximately at the middle position of the orthographic projection of the first barrier dam 40 on the substrate 1.

[0186] The orthographic projection of the filling structure 50 on the substrate 1 partially overlaps with the orthographic projection of the first barrier dam 40 on the substrate 1. For example, the filling structure 50 includes a side portion 531 near the first barrier dam 40, the orthographic projection of the side portion 531 on the substrate 1 falling within the orthographic projection of the first barrier dam 40 on the substrate 1, and the orthographic projection of the side portion 531 on the substrate 1 being located at the middle position of the orthographic projection of the first barrier dam 40 on the substrate 1. That is, the filling structure 50 terminates at the middle position of the upper surface of the first barrier dam 40.

[0187] In the illustrated embodiment, the orthographic projection of the filling structure 50 on the substrate 1 covers the orthographic projection of the portion of the passivation layer 64 constituting the first barrier dam 40 on the substrate 1.

[0188] Optionally, due to limitations in actual processing technology, the orthographic projection of the filling structure 50 on the substrate 1 can cover the orthographic projection of the first blocking dam 40 on the substrate 1, such as... Figure 14A As shown. That is, the filling structure 50 can extend to the side of the first barrier dam 40 away from the hole 10.

[0189] It should be noted that, in Figures 12 to 14B In the embodiment shown, the filling structure 50 is disconnected from the organic material layer 3 located in the pixel region A1 in the radial direction along the opening 10, and the filling structure 50 and the organic material layer 3 located in the pixel region A1 are made of the same material and formed by the same patterning process.

[0190] like Figures 12 to 14B As shown, the filling structure 50 may include a first filling portion 51 and a second filling portion 52, wherein the second filling portion 52 is closer to the first barrier dam 40 than the first filling portion 51. For example, in Figure 12 In the illustrated embodiment, the first filling portion 51 is the portion of the filling structure 50 near the opening 10, and the second filling portion 52 is the portion of the filling structure 50 near the first barrier dam 40. Figure 13 and Figure 14A In the embodiment shown, the first filling portion 50 is the portion of the filling structure 50 near the opening 10, and the second filling portion 52 is the portion of the filling structure 50 that overlaps with the first barrier dam 40.

[0191] The first filling portion 51 includes a first surface remote from the substrate 1, and the second filling portion 52 includes a second surface remote from the substrate 1. The vertical distance between the first surface and the substrate 1 is greater than the vertical distance between the second surface and the substrate 1.

[0192] Optionally, such as Figure 14B As shown, the first barrier dam 40 includes a top surface away from the substrate and a side surface 401 facing the opening. The passivation layer 64 partially covers the top surface of the first barrier dam, and the passivation layer 64 also covers the side surface of the first barrier dam. For example, the portion of the passivation layer 64 covering the top surface of the first barrier dam (which may be referred to as the first portion of the passivation layer 64) Figure 14B The area of ​​the orthographic projection of the third conductive layer 63 (represented by reference numeral 642 in the figure) onto the substrate 1 is the first portion of the third conductive layer 63 (i.e., the portion located at the first barrier dam 40, in...). Figure 14BThe area of ​​the first barrier dam 40 (denoted by reference numeral 632 in the accompanying drawings) is 3 / 10 to 7 / 10 of the area projected onto the substrate 1, for example, 2 / 5 to 3 / 5. This arrangement allows the first barrier dam 40 to more effectively prevent crack propagation.

[0193] like Figure 14B As shown, the passivation layer 64 also includes a portion that does not cover the first barrier dam 40 (which may be referred to as the second portion of the passivation layer 64, in...). Figure 14B (Referring to 643 in the accompanying drawings), the orthographic projection of this portion 643 on the substrate 1 overlaps with the orthographic projection of the filling structure 50 on the substrate 1, for example, this portion is covered by the filling structure 50.

[0194] Figure 16 This is a partial plan view of a display substrate around an opening according to some exemplary embodiments of the present disclosure. Figure 17 The display substrate is along some exemplary embodiments of the present disclosure. Figure 16 The cross-sectional view taken from line CC' in the diagram. Figure 18 yes Figure 17 A magnified view of part I. Figure 19 yes Figure 17 A magnified view of part II. Figure 20 yes Figure 17 A magnified view of part III.

[0195] It should be noted that, Figure 16 and Figure 17 Only the structure located on the side with the opening is shown. It should also be noted that the following description focuses on... Figures 16 to 20 The similarities between the various embodiments described above are as described above and will not be repeated here.

[0196] Reference Figures 16 to 20 The display substrate 100 may include a plurality of first blocking dams 40, second blocking dams 60, third blocking dams 70 and a plurality of fourth blocking dams 90 located between the sub-pixel SP and the opening 10. The plurality of first blocking dams 40, second blocking dams 60, third blocking dams 70 and the plurality of fourth blocking dams 90 are arranged sequentially along the direction from the opening 10 to the sub-pixel SP.

[0197] For example, the display substrate 100 may include seven first barrier dams 40, one second barrier dam 60, one third barrier dam 70, and four fourth barrier dams 90. It should be understood that the number of barrier dams described above should not be construed as a limitation on the embodiments of this disclosure, and the display substrate may include various other numbers of barrier dams.

[0198] Continue to refer to Figures 16 to 20The display substrate 100 may include functional film layers disposed on the substrate 1. For example, the functional film layers may include: a barrier layer 21 disposed on the substrate 1; a buffer layer 22 disposed on the side of the barrier layer 21 away from the substrate 1; a first gate insulating layer 231 disposed on the side of the buffer layer away from the substrate 1; a first conductive layer 61 disposed on the side of the first gate insulating layer 231 away from the substrate 1; a second gate insulating layer 232 disposed on the side of the first conductive layer 61 away from the substrate 1; a second conductive layer 62 disposed on the side of the second gate insulating layer 232 away from the substrate 1; an interlayer dielectric layer 24 disposed on the side of the second conductive layer 62 away from the substrate 1; and a third conductive layer 63 disposed on the side of the interlayer dielectric layer 24 away from the substrate 1.

[0199] Combined with reference Figure 10 , Figure 12 and Figure 13 The gate G of the thin-film transistor can be located in the first conductive layer 61, that is, the first conductive layer 61 can be formed of the conductive material forming the gate G. The source S and drain D of the thin-film transistor can be located in the third conductive layer 63, that is, the third conductive layer 63 can be formed of the conductive material forming the source S and drain D. It should be noted that the second conductive layer 62 can also be formed of the gate conductive material.

[0200] Continue to refer to Figures 16 to 20 The display substrate 100 may include an organic material layer 3 disposed on the side of the functional film layer away from the substrate 1. For example, the organic material layer 3 may include at least one layer selected from a planarization layer 33 and a pixel defining layer 34.

[0201] exist Figures 16 to 20 In the illustrated embodiment, the first barrier dam 40 includes at least a portion of each of the barrier layer 21, buffer layer 22, and third conductive layer 62, forming a stacked structure. For example, the first barrier dam 40 includes a portion of each of the barrier layer 21, buffer layer 22, first gate insulating layer 231, first conductive layer 61, second gate insulating layer 232, second conductive layer 62, interlayer dielectric layer 24, and third conductive layer 63, forming a stacked structure.

[0202] The second barrier dam 60 includes at least a portion of each of the planarization layer 33 and the pixel defining layer 34 forming a stacked structure. For example, the second barrier dam 60 includes a portion of each of the barrier layer 21, the buffer layer 22, the first gate insulating layer 231, the second gate insulating layer 232, the interlayer dielectric layer 24, the planarization layer 33, and the pixel defining layer 34 forming a stacked structure.

[0203] The third barrier dam 70 includes at least a portion of each of the planarization layer 33 and the pixel defining layer 34 forming a stacked structure. For example, the third barrier dam 70 includes a portion of each of the barrier layer 21, the buffer layer 22, the first gate insulating layer 231, the second gate insulating layer 232, the interlayer dielectric layer 24, the planarization layer 33, and the pixel defining layer 34 forming a stacked structure.

[0204] The fourth barrier dam 90 includes at least a portion of each of the barrier layer 21, buffer layer 22, and third conductive layer 62, forming a stacked structure. For example, the fourth barrier dam 90 includes a portion of each of the barrier layer 21, buffer layer 22, first gate insulating layer 231, second gate insulating layer 232, interlayer dielectric layer 24, and third conductive layer 63, forming a stacked structure.

[0205] Furthermore, the display substrate 100 may also include a filling structure 50. For example, the filling structure 50 includes a first filling film layer 501 and a second filling film layer 502, and the organic material layer includes a planarization layer 33 and a pixel defining layer 34. The first filling film layer 501 and the planarization layer 33 are located in the same layer, and the first filling film layer 501 and the planarization layer 33 comprise the same material. That is, the first filling film layer 501 and the planarization layer 33 are formed using the same patterning process. The second filling film layer 502 and the pixel defining layer 34 are located in the same layer, and the second filling film layer 502 and the pixel defining layer 34 comprise the same material. That is, the second filling film layer 502 and the pixel defining layer 34 are formed using the same patterning process.

[0206] Reference Figure 17 Except for the first barrier dam 40 closest to the opening 10, the other first barrier dams 40 are not covered with organic material; that is, the other first barrier dams 40 are not covered by either the organic material layer 3 or the filling structure 50. Specifically, the orthographic projections of the other first barrier dams (excluding the one closest to the opening) on ​​the substrate are spaced apart from the orthographic projections of the filling structure 50 on the substrate. Thus, the organic material layer 3 and the filling structure 50 are separated along the radial direction of the opening 10.

[0207] The orthographic projection of the filling structure 50 on the substrate 1 partially overlaps with the orthographic projection of the first barrier 40 closest to the opening 10 on the substrate 1. For example, the filling structure 50 terminates at the middle position of the upper surface of the first barrier 40 closest to the opening 10.

[0208] Optionally, the orthographic projection of the filling structure 50 on the substrate 1 overlaps with the orthographic projection of the first barrier dam 40 on the substrate 1, and the area of ​​the overlapping portion is approximately half the area of ​​the orthographic projection of the first barrier dam 40 on the substrate 1, for example, in the range of 2 / 5 to 3 / 5. This arrangement can improve the flatness of the filling structure.

[0209] The orthographic projection of the first barrier dam 40 onto the substrate 1 along the radial direction of the opening 10 is smaller than the orthographic projection of each of the second barrier dam 60 and the third barrier dam 70 onto the substrate 1 along the radial direction of the opening 10. The orthographic projection of the first barrier dam 40 onto the substrate 1 along the radial direction of the opening 10 is substantially equal to the orthographic projection of the fourth barrier dam 90 onto the substrate 1 along the radial direction of the opening 10. (Refer to...) Figures 17 to 20 The width of the first barrier 40 is less than the width of each of the second barrier 60 and the third barrier 70, and the width of the first barrier 40 is approximately equal to the width of the fourth barrier 90.

[0210] It should be noted that, unless otherwise stated, the width of the barrier dam in this document refers to the dimension of the barrier dam's orthographic projection onto the substrate along the radial direction of the opening.

[0211] For example, the orthographic projection of each of the first barrier dam 40 and the fourth barrier dam 90 onto the substrate 1 along the radial direction of the opening 10 has a size (i.e., width) of approximately 5 to 7 micrometers, the orthographic projection of the second barrier dam 60 onto the substrate 1 along the radial direction of the opening 10 has a size (i.e., width) of approximately 16 to 20 micrometers, and the orthographic projection of the third barrier dam 70 onto the substrate 1 along the radial direction of the opening 10 has a size (i.e., width) of approximately 40 micrometers.

[0212] Optionally, a plurality of first barrier dams 40 are arranged at equal intervals along the radial direction of the opening 10. The width of the portion of the first barrier dam 40 located in the third conductive layer 63 is greater than the width of the portion of the first barrier dam 40 located in the second conductive layer 62, and the width of the portion of the first barrier dam 40 located in the second conductive layer 62 is greater than the width of the portion of the first barrier dam 40 located in the first conductive layer 61.

[0213] For example, the width of the portion of the first barrier dam 40 located in the third conductive layer 63 is about 5 micrometers, the width of the portion of the first barrier dam 40 located in the second conductive layer 62 is about 6 micrometers, and the width of the portion of the first barrier dam 40 located in the first conductive layer 61 is about 7 micrometers.

[0214] For example, the spacing between portions of the third conductive layer 63 of two adjacent first barrier dams 40 is about 7 micrometers.

[0215] Optionally, a plurality of fourth barrier dams 90 are arranged at equal intervals along the radial direction of the opening 10. The spacing between two adjacent fourth barrier dams 90 is smaller than the spacing between two adjacent first barrier dams 40.

[0216] For example, the width of the portion of the fourth barrier dam 90 located in the third conductive layer 63 is about 5 micrometers.

[0217] For example, the spacing between portions of the third conductive layer 63 of two adjacent fourth barrier dams 90 is about 9 micrometers, and the spacing between portions of the first gate insulating layer 231 of two adjacent fourth barrier dams 90 is about 5 micrometers.

[0218] For example, the width of the portion of the second barrier dam 60 located in the pixel defining layer 34 is about 16 micrometers, and the width of the portion of the second barrier dam 60 located in the planarization layer 33 is about 20 micrometers.

[0219] For example, the width of the portion of the third barrier dam 70 located in the pixel defining layer 34 is about 40 micrometers, and the width of the portion of the third barrier dam 70 located in the planarization layer 33 is about 40 micrometers.

[0220] For example, the distance between the portion of the second barrier dam 60 located in the planarization layer 33 and the portion of the third barrier dam 70 located in the planarization layer 33 is about 20 micrometers.

[0221] In some exemplary embodiments of this disclosure, the cross-section of each of the first barrier dam 40 and the second barrier dam 60 is trapezoidal, and the cross-section is perpendicular to the surface of the substrate on which the first barrier dam and the second barrier dam are disposed (i.e., Figure 6A The cross-section extends along a first direction (i.e., the radial direction mentioned above); the minimum width of the first barrier dam 40 is 1 / 4 to 3 / 8 of the minimum width of the second barrier dam 60, and the maximum width of the first barrier dam 40 is 3 / 10 to 2 / 5 of the maximum width of the second barrier dam 60. This arrangement allows the first and second barrier dams to cooperate with each other, more effectively preventing crack propagation.

[0222] Each of the first and third barrier dams has a trapezoidal cross-section, which is perpendicular to the surface of the substrate where the first and third barrier dams are located, and extends along the first direction. The minimum width of the first barrier dam 40 is 1 / 16 to 3 / 16 of the minimum width of the third barrier dam 70, and the maximum width of the first barrier dam 40 is 3 / 20 to 1 / 5 of the maximum width of the third barrier dam 70. This arrangement allows the first and third barrier dams to cooperate with each other, more effectively preventing crack propagation.

[0223] Figure 21 This is a FIB (Focused Ion Beam) pattern of a display substrate according to some exemplary embodiments of the present disclosure, such as... Figure 21 As shown, the filling structure 50 includes two film layers 501 and 502. As described above, the two film layers 501 and 502 correspond to the planarization layer and the pixel definition layer, respectively. Figure 22 This is a FIB (Focused Ion Beam) pattern of a display substrate according to some exemplary embodiments of the present disclosure, such as... Figure 22 As shown, the filling structure 50 includes a film layer, which, as described above, corresponds to the planarization layer.

[0224] For example, the materials of the organic material layer and the filling structure 50 include at least one selected from polymethyl methacrylate, polycarbonate, polystyrene, epoxy resin, polyimide, and polyethylene.

[0225] Optionally, the display substrate 100 further includes a back film 4 disposed on the surface of the substrate 1 away from the organic material layer 3. For example, the back film 4 may include, but is not limited to, a polyimide (PI) material to enhance the strength of the substrate 1, thereby providing better support for the various film layers on the substrate 1.

[0226] Some exemplary embodiments disclosed herein also provide a display device 200. Figure 23 This is a schematic diagram of the structure of a display device provided according to some exemplary embodiments of the present disclosure. Figure 23 As shown, the display device includes a display substrate provided according to the above embodiment.

[0227] It should be understood that the display substrate and the display device also have the same technical effects as the beneficial effects of the above manufacturing method, as can be seen in the above description.

[0228] The display device can be any product or component with display functionality. For example, it can be a smartphone, mobile phone, navigation device, television (TV), car audio system, laptop, tablet computer, portable multimedia player (PMP), personal digital assistant (PDA), etc. The display device can also be a pocket-sized portable communication terminal configured with wireless communication capabilities. Furthermore, the display device can be a flexible device or flexible display device.

[0229] While some embodiments of the overall technical concept of this disclosure have been shown and described, those skilled in the art will understand that changes may be made to these embodiments without departing from the principles and spirit of the overall technical concept, the scope of which is defined by the claims and their equivalents.

Claims

1. A display substrate, comprising: A substrate, the substrate comprising at least a pixel region and an opening region; A plurality of sub-pixels are disposed on the substrate, and the plurality of sub-pixels are located in the pixel region; An opening, wherein the opening is located in the opening area; A first barrier dam is disposed between the sub-pixel and the opening, and at least partially surrounds the opening; A second barrier dam is disposed on the side of the first barrier dam away from the opening; An organic material layer, wherein the orthographic projection of the organic material layer on the substrate falls into the pixel region, and the organic material layer includes at least one film layer; and A filling structure, at least a portion of which is disposed between the opening and the first barrier dam. Wherein, at least one film layer of the filling structure and the organic material layer are located in the same layer, and the filling structure and at least one film layer of the organic material layer comprise the same material; The width of the orthographic projection of the first barrier dam on the substrate is smaller than the width of the orthographic projection of the second barrier dam on the substrate. The display substrate further includes a functional film layer disposed on the side of the organic material layer near the substrate, the functional film layer comprising: A first conductive layer disposed on the substrate; A gate insulating layer disposed on the side of the first conductive layer away from the substrate. A second conductive layer is disposed on the side of the gate insulating layer away from the substrate. An interlayer dielectric layer disposed on the side of the second conductive layer away from the substrate; A third conductive layer is disposed on the side of the interlayer dielectric layer away from the substrate; and A passivation layer disposed on the side of the third conductive layer away from the substrate. The first barrier dam includes a stacked structure comprising a portion of each of the first conductive layer, the gate insulating layer, the second conductive layer, the interlayer dielectric layer, the third conductive layer, and the passivation layer; and The passivation layer includes a first portion located at the first barrier dam, and the third conductive layer includes a first portion located at the first barrier dam. The orthographic projection of the first portion of the passivation layer on the substrate falls within the orthographic projection of the first portion of the third conductive layer on the substrate.

2. The display substrate according to claim 1, wherein, The filling structure includes a single filling film layer, and the organic material layer includes a planarization layer; and The filling film layer and the planarization layer are located in the same layer, and the filling film layer and the planarization layer comprise the same material.

3. The display substrate according to claim 1, wherein, The filling structure includes a first filling film layer and a second filling film layer, and the organic material layer includes a planarization layer and a pixel delimitation layer; The first filling film layer and the planarization layer are located in the same layer, and the first filling film layer and the planarization layer comprise the same material; and The second filling film layer and the pixel defining layer are located in the same layer, and the second filling film layer and the pixel defining layer comprise the same material.

4. The display substrate according to any one of claims 1 to 3, wherein, The display substrate includes a plurality of first barrier dams, wherein the orthographic projection of the first barrier dam closest to the opening on the substrate does not overlap with the orthographic projection of the filling structure on the substrate.

5. The display substrate according to any one of claims 1 to 3, wherein, The display substrate includes a plurality of first barrier dams, wherein the orthographic projection of the first barrier dam closest to the opening on the substrate partially overlaps with the orthographic projection of the filling structure on the substrate.

6. The display substrate according to any one of claims 1 to 3, wherein, The display substrate includes a plurality of first barrier dams, and the orthographic projection of the filling structure on the substrate covers the orthographic projection of the first barrier dam closest to the opening among the plurality of first barrier dams on the substrate.

7. The display substrate according to claim 1, wherein, The orthographic projection of the filling structure onto the substrate covers the orthographic projection of the first portion of the passivation layer onto the substrate.

8. The display substrate according to claim 7, wherein, The orthographic projection of the filling structure on the substrate partially overlaps with the orthographic projection of the first blocking dam on the substrate, and the area of ​​the overlapping portion is 2 / 5 to 3 / 5 of the area of ​​the orthographic projection of the first blocking dam on the substrate.

9. The display substrate according to any one of claims 1-3 and 7-8, wherein, The filling structure includes a first filling portion and a second filling portion, wherein the second filling portion is closer to the first barrier dam than the first filling portion; The first filling portion includes a first surface remote from the substrate, and the second filling portion includes a second surface remote from the substrate; as well as The vertical distance between the first surface and the substrate is greater than the vertical distance between the second surface and the substrate.

10. The display substrate according to claim 8, wherein, The first barrier dam includes a top surface away from the substrate and a side surface facing the opening, the passivation layer partially covering the top surface of the first barrier dam and the passivation layer covering the side surface of the first barrier dam.

11. The display substrate according to claim 10, wherein, The area of ​​the portion of the passivation layer covering the top surface of the first barrier dam projected onto the substrate is 3 / 10 to 7 / 10 of the area of ​​the first portion of the third conductive layer projected onto the substrate.

12. The display substrate according to claim 4, wherein, The orthographic projections of the first barrier dams, except for the first barrier dam closest to the opening, on the substrate are spaced apart from the orthographic projections of the filling structure on the substrate.

13. The display substrate according to claim 5, wherein, The orthographic projections of the first barrier dams, except for the first barrier dam closest to the opening, on the substrate are spaced apart from the orthographic projections of the filling structure on the substrate.

14. The display substrate according to claim 6, wherein, The orthographic projections of the first barrier dams, except for the first barrier dam closest to the opening, on the substrate are spaced apart from the orthographic projections of the filling structure on the substrate.

15. The display substrate according to any one of claims 1-3 and 7-8, wherein, The display substrate further includes a third barrier dam, which is disposed on the side of the second barrier dam away from the opening, and the width of the orthographic projection of the third barrier dam on the substrate is greater than the width of the orthographic projection of the second barrier dam on the substrate.

16. The display substrate according to claim 15, wherein, The display substrate further includes a fourth blocking dam, which is disposed on the side of the third blocking dam away from the opening, and the width of the orthographic projection of the fourth blocking dam on the substrate is substantially equal to the width of the orthographic projection of the first blocking dam on the substrate.

17. The display substrate according to claim 16, wherein, The functional membrane layer includes: A barrier layer disposed on the substrate; A buffer layer is disposed on the side of the barrier layer away from the substrate. A first gate insulating layer is disposed on the side of the buffer layer away from the substrate. A first conductive layer disposed on the side of the first gate insulating layer away from the substrate. A second gate insulating layer is disposed on the side of the first conductive layer away from the substrate. A second conductive layer is disposed on the side of the second gate insulating layer away from the substrate.

18. The display substrate according to claim 17, wherein, The filling structure also includes a portion located in at least one of the barrier layer and the buffer layer.

19. The display substrate according to claim 18, wherein, The first barrier dam comprises at least a stacked structure consisting of a portion of each of the barrier layer, the buffer layer, and the third conductive layer; and / or, The organic material layer includes a planarization layer and a pixel-defining layer, and the second barrier dam includes at least a stacked structure comprising a portion of each of the planarization layer and the pixel-defining layer; and / or, The organic material layer includes a planarization layer and a pixel-defining layer, and the third barrier dam includes at least a stacked structure consisting of a portion of each of the planarization layer and the pixel-defining layer; and / or, The fourth barrier dam comprises at least a portion of each of the barrier layer, the buffer layer, and the third conductive layer, forming a stacked structure.

20. The display substrate according to any one of claims 1 to 3, wherein, Each of the first and second barrier dams has a trapezoidal cross-section, the cross-section being perpendicular to the surface of the substrate on which the first and second barrier dams are disposed, and the cross-section extending along a first direction from the opening region to the pixel region; The minimum width of the first barrier is 1 / 4 to 3 / 8 of the minimum width of the second barrier, and the maximum width of the first barrier is 3 / 10 to 2 / 5 of the maximum width of the second barrier.

21. The display substrate according to claim 15, wherein, The cross-section of each of the first and third barrier dams is trapezoidal, the cross-section is perpendicular to the surface of the substrate on which the first and third barrier dams are disposed, and the cross-section extends along a first direction from the opening region to the pixel region; The minimum width of the first barrier is 1 / 16 to 3 / 16 of the minimum width of the third barrier, and the maximum width of the first barrier is 3 / 20 to 1 / 5 of the maximum width of the third barrier.

22. The display substrate according to any one of claims 1-3, 7-8, 10-14, 16-19, and 21, wherein, The organic material layer is made of at least one material selected from polymethyl methacrylate, polycarbonate, polystyrene, epoxy resin, polyimide, and polyethylene.

23. The display substrate according to any one of claims 1-3, 7-8, 10-14, 16-19, and 21, wherein, The substrate is a flexible substrate, and the display substrate further includes a back film disposed on the surface of the substrate away from the organic material layer.

24. A display device comprising a display substrate according to any one of claims 1 to 23.

25. A method for manufacturing a display substrate, comprising the following steps: A substrate is provided, the substrate comprising at least a pixel region and a diced region; A functional film layer is formed on the substrate, the functional film layer including at least an inorganic material layer, a portion of the inorganic material layer having its orthographic projection on the substrate falling into the pixel region, and another portion of the inorganic material layer having its orthographic projection on the substrate covering the cutting region; At least a portion of the inorganic material layer located in the cutting area is removed to form a groove in the cutting area of ​​the substrate. An organic material layer is formed on the substrate. A back film is attached to the surface of the substrate away from the functional film layer and the organic material layer; as well as A cutting process is performed to form an opening, wherein the cutting line is located in the cutting area. The step of forming an organic material layer on the substrate includes: An organic material layer is formed on the side of the functional film layer away from the substrate, such that a portion of the organic material layer is projected onto the substrate and falls into the pixel area, while another portion of the organic material layer is projected onto the substrate and covers the cut area, thereby forming a filling structure that fills the groove.

26. The manufacturing method according to claim 25, wherein, The organic material layer includes a planarization layer.

27. The manufacturing method according to claim 25, wherein, The organic material layer includes a planarization layer and a pixel definition layer.

28. The manufacturing method according to any one of claims 25 to 27, further comprising: A first barrier dam is formed on the substrate. The first barrier dam surrounds the cutting area.

29. The manufacturing method according to claim 28, wherein, The orthographic projection of the filling structure on the substrate does not overlap with the orthographic projection of the first barrier dam on the substrate.

30. The manufacturing method according to claim 28, wherein, The orthographic projection of the filling structure on the substrate partially overlaps with the orthographic projection of the first barrier dam on the substrate.

31. The manufacturing method according to claim 28, wherein, The orthographic projection of the filling structure on the substrate covers the orthographic projection of the first barrier dam on the substrate.

32. The manufacturing method according to any one of claims 25-27 and 29-31, wherein, In the step of attaching a back film to the surface of the substrate away from the organic material layer, pressure is applied to attach the substrate and the back film such that the portion of the substrate located in the cut area and the portion of the substrate located in the pixel area are both attached to the back film.

33. The manufacturing method according to claim 27, wherein, The step of forming a functional film layer on the substrate includes: sequentially forming a barrier layer, a buffer layer, a first conductive layer, a gate insulating layer, a second conductive layer, an interlayer dielectric layer, a third conductive layer, and a passivation layer on the substrate; and The inorganic material layer includes at least one of a barrier layer, a buffer layer, a gate insulating layer, and an interlayer dielectric layer.

34. The manufacturing method according to claim 33, wherein, The method further includes: forming a first barrier dam on the substrate, wherein the first barrier dam surrounds the cutting region; In the step of forming an organic material layer on the side of the functional film layer away from the substrate, the surface of the planarization layer away from the substrate includes a first planarization layer surface portion and a second planarization layer surface portion. The orthographic projection of the first planarization layer surface portion on the substrate at least partially overlaps with the orthographic projection of the cutting region on the substrate, and the orthographic projection of the second planarization layer surface portion on the substrate at least partially overlaps with the orthographic projection of the first barrier dam on the substrate. The vertical distance d1 between the surface portion of the first planarization layer at the first position and the reference plane is less than the vertical distance d2 between the surface portion of the first planarization layer at the second position and the reference plane, and the vertical distance d2 is less than the vertical distance d3 between the surface portion of the second planarization layer and the reference plane. Wherein, the reference plane is the surface of the interlayer dielectric layer away from the substrate, the orthographic projection of the first position on the substrate falls within the orthographic projection of the cutting area on the substrate, and the orthographic projection of the second position on the substrate falls within the orthographic projection of the adjacent portion of the cutting area and the first barrier dam on the substrate.

35. The manufacturing method according to claim 34, wherein, In the step of removing at least a portion of the inorganic material layer located in the cutting region, the portion of the inorganic material layer located in the cutting region is removed by an etching process.

36. The manufacturing method according to any one of claims 25-27, 29-31, and 33-35, wherein, The steps involved in performing a cutting process to create an opening include: A laser cutting process is performed so that the trajectory of the laser projected onto the substrate falls into the groove, thereby forming an opening that penetrates the back film, the substrate, the functional film layer, and the filling structure.

37. The manufacturing method according to claim 34, wherein, The slope angle of the surface portion of the first planarization layer is in the range of 10 to 18 degrees.

38. The manufacturing method according to claim 34, wherein, The difference between the vertical distance d2 and the vertical distance d1 is in the range of 100 to 300 nanometers.

39. The manufacturing method according to claim 34, wherein, The difference between the vertical distance d3 and the vertical distance d2 is in the range of 150 to 500 nanometers.

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