A silver / graphene composite thermal conductive interface material and preparation method thereof

Abstract

The present invention relates to the technical field of thermal conductive interface materials, and in particular to a silver / graphene composite thermal conductive interface material and a preparation method thereof. A preparation method of a silver / graphene composite thermal conductive interface material comprises the following steps: A. performing surface pretreatment on a copper substrate; B. depositing graphene at the position where the copper substrate is subjected to surface pretreatment; C. immersing the copper substrate on which graphene is deposited in a silver salt solution, and performing a replacement reaction to replace the outer copper atoms of the copper substrate with silver to obtain a composite primary product of silver and graphene; D. performing surface cleaning on the composite primary product of silver and graphene obtained in step C. The preparation method of the silver / graphene composite thermal conductive interface material has a simple preparation process and a mild reaction. The thermal conductivity of the prepared silver / graphene composite thermal conductive interface material is significantly improved, which solves the problem that the thermal conductivity of the existing thermal conductive interface material is poor and the heat cannot be dissipated in time during use.

Description

Technical Field

[0001] The present invention relates to the technical field of thermal conductive interface materials, and in particular to a silver / graphene composite thermal conductive interface material and a preparation method thereof. Background Art

[0002] Thermal conductive interface materials are key materials that determine the heat dissipation efficiency of electronic products. They are mainly used to fill the micro gaps and uneven surfaces generated when two materials come into contact, reduce thermal resistance, improve the heat dissipation performance of the device, and provide an effective heat conduction path for power devices and heat dissipation components. They are widely used in various fields, such as integrated circuits, mobile terminals, communication equipment, automobiles, power supplies, and LED lighting.

[0003] As electronic devices continue to integrate more powerful functions into smaller components, the design space size is getting smaller and smaller, and the application of large heat dissipation components is limited. The heat energy generated by components during use is increasing. If the heat cannot be dissipated in time, the increase in temperature will lead to increased device gate delays, slower operation speeds, reduced device reliability, and shortened life. Therefore, in the case of shrinking architectures and shrinking operating spaces, how to effectively remove a large amount of heat from components that generate higher temperatures to ensure that the devices have sufficient working and service life has become an urgent problem to be solved in electrical design. However, the preparation methods of existing thermal interface materials are complicated, and the thermal conductivity of the prepared thermal interface materials is poor, which makes it difficult to meet the use requirements of existing components. Summary of the invention

[0004] In view of the problems raised by the background technology, the purpose of the present invention is to provide a preparation method of a silver / graphene composite thermal conductive interface material, which has a simple preparation process and a mild reaction. The thermal conductivity of the prepared silver / graphene composite thermal conductive interface material is significantly improved, which solves the problems of complex preparation and poor thermal conductivity of existing thermal conductive interface materials.

[0005] Another object of the present invention is to propose a silver / graphene composite thermal conductive interface material prepared by the preparation method of the silver / graphene composite thermal conductive interface material, which has good thermal conductivity and can be prepared into a thermal conductive interface material of a desired shape according to needs, thereby solving the problem that the existing thermal conductive interface material has poor thermal conductivity and cannot dissipate heat in time during use.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] A method for preparing a silver / graphene composite thermal conductive interface material comprises the following steps:

[0008] A. Surface pretreatment of the copper substrate;

[0009] B. Depositing graphene at the location where the copper substrate is subjected to surface pretreatment;

[0010] C. Immersing the copper substrate on which the graphene is deposited in a silver salt solution to carry out a replacement reaction, so that the outer copper atoms of the copper substrate are replaced by silver to obtain a composite primary product of silver and graphene;

[0011] D. Cleaning the surface of the composite primary product of silver and graphene obtained in step C to obtain a silver / graphene composite thermal conductive interface material.

[0012] To further illustrate, in step A, the copper substrate is pretreated on the surface by using any one of the following methods: prefabricating grooves at local locations on the surface of the copper substrate, depositing active metal particles at local locations on the surface of the copper substrate, chemically etching local locations on the surface of the copper substrate, and stamping the copper substrate.

[0013] To further illustrate, the active metal particles are any one of cobalt, palladium and nickel.

[0014] To further explain, chemically corroding the local position of the surface of the copper substrate specifically involves using dilute nitric acid to chemically corrode the local position of the surface of the copper substrate.

[0015] To further illustrate, in step B, the graphene is prepared by chemical vapor deposition, oxidation-reduction method or silicon carbide epitaxial growth method.

[0016] To further illustrate, in step C, the silver salt solution is a silver nitrate solution, and the silver salt solution contains a complexing agent and a dispersant.

[0017] To further illustrate, the complexing agent is one or a combination of two of ammonia water, histidine and an organic substance containing a hydroxyl functional group, and the dispersant is any one of polyvinyl pyrrolidone, polyethylene glycol and hexadecyltrimethylammonium bromide.

[0018] To further illustrate, the surface cleaning in step D specifically involves cleaning the composite primary product of silver and graphene with an ammonium persulfate solution and then heating it.

[0019] To further illustrate, the copper substrate is in the shape of flakes or particles.

[0020] A silver / graphene composite thermal conductive interface material is prepared using the silver / graphene composite thermal conductive interface material preparation method.

[0021] Compared with the prior art, the embodiments of the present invention have the following beneficial effects:

[0022] 1. Pre-treating the surface of the copper substrate first allows graphene to be better deposited on the surface of the copper substrate, the effect of graphene deposition on the copper substrate is good, and the deposition shape of the graphene can be controlled. Then, the copper substrate on which the graphene is deposited is immersed in a silver salt solution for a replacement reaction, so that the outer copper atoms of the copper substrate are replaced by silver, and the silver grows between the graphene to form a composite primary product of silver and graphene. After the composite primary product of silver and graphene is surface cleaned, the desired silver / graphene composite thermal conductive interface material is obtained. The preparation method of the silver / graphene composite thermal conductive interface material has a simple preparation process and a mild reaction. The thermal conductivity of the prepared silver / graphene composite thermal conductive interface material is significantly improved, which solves the problem of complex preparation and poor thermal conductivity of existing thermal conductive interface materials.

[0023] 2. Prefabricate grooves at local positions on the surface of the copper substrate by mechanical processing, so that graphene can be filled in the grooves. The shape and distribution of the graphene in the silver / graphene composite thermal conductive interface material can be controlled by controlling the shape and distribution of the grooves, and the silver / graphene composite thermal conductive interface material of the desired shape can be obtained; by depositing active metal particles at local positions on the surface of the copper substrate, graphene will be preferentially deposited on the surface where the active metal particles are deposited, and graphene is easy to grow on the active metal particles. The number and distribution of graphene can be controlled by controlling the number and distribution of active metal particles; by chemically corroding the local positions on the surface of the copper substrate, the surface of the copper substrate has a certain degree of roughness, so that graphene is easily deposited at the rough position of the copper substrate surface, thereby controlling the shape and distribution of graphene; by embossing the substrate, specifically, the substrate can be embossed to have a square wave structure, and graphene is deposited on the side of the copper substrate with the groove. Through the replacement reaction, silver is equivalent to copying the shape of the original copper substrate, and the shape of the composite interface thermal conductive material finally formed is also square wave;

[0024] 3. By adding the complexing agent to the silver salt solution, the complexing agent can form a complex ion compound with the silver ions, so that the silver ions exist in the form of a complex, preventing the formation of hydroxides or oxides, and improving the stability of the silver salt solution. Adding the dispersant can make the silver salt solution have good dispersibility, so that the silver ions in the silver salt solution are fully in contact with the copper substrate, a replacement reaction occurs, and the outer copper atoms of the copper substrate are replaced by dense and delicate silver. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 It is a schematic diagram of the preparation process of a method for preparing a silver / graphene composite thermal conductive interface material according to an embodiment of the present invention;

[0026] Figure 2Schematic diagram of step A and step B of a method for preparing a silver / graphene composite thermal conductive interface material according to an embodiment of the present invention (the method for performing surface pretreatment is to prefabricate grooves at local positions on the surface of a copper substrate, wherein a1 is a top view of step A, a2 is a side view of step A, b1 is a top view of step B, and b2 is a side view of step B);

[0027] Figure 3 Schematic diagram of step A of a method for preparing a silver / graphene composite thermal conductive interface material according to an embodiment of the present invention (the method for performing surface pretreatment is to deposit active metal particles at a local position on the surface of a copper substrate, wherein c1 is a top view of step A, c2 is a side view of step A, d1 is a top view of step B, and d2 is a side view of step B);

[0028] Figure 4 Schematic diagram of step A of a method for preparing a silver / graphene composite thermal conductive interface material according to an embodiment of the present invention (the method for performing surface pretreatment is to chemically etch a local portion of the surface of the copper substrate, wherein e1 is a top view of step A, e2 is a side view of step A, f1 is a top view of step B, and f2 is a side view of step B);

[0029] Figure 5 1 is a schematic diagram of step A of a method for preparing a silver / graphene composite thermal conductive interface material according to an embodiment of the present invention (the method for performing surface pretreatment is to perform embossing on a copper substrate);

[0030] Wherein: copper substrate 1, graphene 2, silver salt solution 3, silver 4, groove 5, active metal particles 6. DETAILED DESCRIPTION

[0031] like Figure 1 As shown, a method for preparing a silver / graphene composite thermal conductive interface material comprises the following steps:

[0032] A. performing surface pretreatment on the copper substrate 1;

[0033] B. Depositing graphene 2 at the location where the copper substrate 1 is subjected to surface pretreatment;

[0034] C. Immersing the copper substrate 1 on which the graphene 2 is deposited in a silver salt solution 3 to perform a replacement reaction, so that the outer copper atoms of the copper substrate 1 are replaced by silver 4, thereby obtaining a composite primary product of silver and graphene;

[0035] D. Cleaning the surface of the composite primary product of silver and graphene obtained in step C to obtain a silver / graphene composite thermal conductive interface material.

[0036] The present invention performs surface pretreatment on a copper substrate 1 so that graphene 2 can be better deposited on the surface of the copper substrate 1, the effect of graphene 2 depositing on the copper substrate 1 is good, and the deposition shape of graphene 2 can be controlled, and then the copper substrate 1 deposited with graphene 2 is immersed in a silver salt solution 3 to perform a replacement reaction, so that the outer copper atoms of the copper substrate 1 are replaced by silver 4, and the silver 4 grows between the graphene 2 to form a composite primary product of silver and graphene, and the composite primary product of silver and graphene is surface cleaned to obtain the required silver / graphene composite thermal conductive interface material. The preparation method of the silver / graphene composite thermal conductive interface material has a simple preparation process and a mild reaction, and the thermal conductivity of the prepared silver / graphene composite thermal conductive interface material is significantly improved, thereby solving the problem of complex preparation and poor thermal conductivity of existing thermal conductive interface materials.

[0037] like Figures 2 to 5 As shown, it is further explained that in the step A, the copper substrate 1 is pre-treated on the surface by using any one of the following methods: prefabricating grooves 5 at local positions on the surface of the copper substrate 1, depositing active metal particles 6 at local positions on the surface of the copper substrate 1, chemically etching local positions on the surface of the copper substrate 1, and stamping the copper substrate 1.

[0038] Specifically, the groove 5 is prefabricated at a local position on the surface of the copper substrate 1 by mechanical processing such as laser cutting, so that the graphene 2 can be filled in the groove 5, and the shape and distribution of the graphene in the silver / graphene composite thermal conductive interface material can be controlled by controlling the shape and distribution of the groove 5, so as to obtain a silver / graphene composite thermal conductive interface material of a desired shape; by depositing active metal particles 6 at a local position on the surface of the copper substrate 1, the graphene 2 is preferentially deposited on the surface where the active metal particles 6 are deposited, and the graphene 2 is easily grown on the active metal particles 6. The number and distribution of graphene 2 are controlled by controlling the number and distribution of active metal particles 6; the surface of the copper substrate 1 is chemically corroded locally to give the surface of the copper substrate 1 a certain degree of roughness, so that graphene 2 is easily deposited at the rough position of the surface of the copper substrate 1, thereby controlling the shape and distribution of graphene 2; the copper substrate 1 is embossed, specifically, the copper substrate 1 can be embossed to give it a square wave structure, and graphene 2 is deposited on the side of the copper substrate 1 with a groove. Through a replacement reaction, silver 4 is equivalent to replicating the shape of the original copper substrate 1, and the shape of the composite interface thermal conductive material finally formed is also square wave.

[0039] Preferably, the active metal particles 6 are any one of cobalt, palladium and nickel.

[0040] By depositing active metal particles 6 at local positions on the surface of the copper substrate 1, graphene 2 will be preferentially deposited on the surface where the active metal particles 6 are deposited, and graphene 2 is easy to grow on the active metal particles 6. The active metal particles 6 are any one of cobalt, palladium and nickel, so that the deposition effect of graphene 2 on the surface of the copper substrate 1 is good. Specifically, the deposition area of ​​the deposited active metal particles accounts for 10 to 100% of the surface area of ​​the copper substrate.

[0041] To further explain, chemically corroding the local position of the surface of the copper substrate 1 specifically involves using dilute nitric acid to chemically corrode the local position of the surface of the copper substrate 1 .

[0042] By using dilute nitric acid to chemically corrode local positions on the surface of the copper substrate 1, the surface of the copper substrate 1 has a certain degree of roughness under the corrosive effect of the dilute nitric acid on the surface of the copper substrate 1, making it easier for graphene 2 to deposit on the rough positions on the surface of the copper substrate 1, thereby controlling the shape and distribution of the graphene 2.

[0043] To further illustrate, a sulfuric acid solution containing chloride ions may be used to chemically etch a local portion of the surface of the copper substrate 1 .

[0044] To further illustrate, in the step B, the graphene 2 is prepared by chemical vapor deposition, oxidation-reduction method or silicon carbide epitaxial growth method.

[0045] Specifically, when chemical vapor deposition is used to prepare graphene 2, the surface of the substrate is treated by chemical vapor deposition. Under the protection of inert gas and the regulation of hydrogen, the carbon source is pyrolyzed and reorganized under the support and catalytic action of the substrate to form graphene 2. The electronic properties of graphene 2 prepared by chemical vapor deposition are greatly affected by the substrate; when redox method is used to prepare graphene 2, under the action of a strong oxidant, graphite and the oxidant undergo a redox reaction, functional groups are inserted into the graphite sheets, the van der Waals forces between the sheets are destroyed, and then graphene 2 is obtained by reduction. The conductivity of graphene 2 prepared by the redox method will be reduced, but large-scale and low-cost preparation of graphene 2 can be achieved; when silicon carbide (SiC) epitaxial growth method is used to prepare graphene 2, SiC is heated to above 1000°C under vacuum conditions, and graphene 2 is formed by evaporation of silicon atoms and recombination of carbon atoms.

[0046] To further illustrate, in the step B, the graphene 2 is deposited to a thickness of 1 nm to 1 μm at the location where the surface of the copper substrate 1 is pre-treated.

[0047] To further illustrate, in step C, the silver salt solution 3 is a silver nitrate solution, and the silver salt solution 3 contains a complexing agent and a dispersant.

[0048] In the step C, the copper substrate 1 on which the graphene 2 is deposited is immersed in a silver salt solution 3 to perform a replacement reaction, so that the outer copper atoms of the copper substrate 1 are replaced by silver 4, and the silver 4 grows between the graphenes 2 to form a composite primary product of the silver 4 and the graphene 2. By adding a complexing agent and a dispersant to the silver salt solution 3, the silver ions in the silver salt solution 3 are fully in contact with the copper substrate 1, and a replacement reaction occurs, so that the outer copper atoms of the copper substrate 1 are replaced by dense and fine silver.

[0049] Preferably, the complexing agent is one or a combination of two of ammonia water, histidine and an organic substance containing a hydroxyl functional group, and the dispersant is any one of polyvinyl pyrrolidone, polyethylene glycol and hexadecyltrimethylammonium bromide.

[0050] By adding the complexing agent to the silver salt solution 3, the complexing agent can form a complex ion compound with the silver ions, so that the silver ions exist in the form of a complex, preventing the formation of hydroxides or oxides, and improving the stability of the silver salt solution. Adding the dispersant can make the silver salt solution 3 have good dispersibility, so that the silver ions in the silver salt solution 3 are fully in contact with the copper substrate 1, a substitution reaction occurs, and the outer copper atoms of the copper substrate 1 are replaced by dense and delicate silver 4.

[0051] To further illustrate, the surface cleaning in step D is specifically to use an ammonium persulfate solution to clean the composite primary product of silver and graphene, and then heat it. The surface cleaning can remove metal oxides and residual copper ion-containing solution.

[0052] Preferably, the copper substrate 1 is in the shape of flakes or particles.

[0053] Specifically, the shape of the copper substrate 1 is a cuboid, or the shape of the copper substrate 1 is a sphere. It should be noted that the shape of the copper substrate 1 can also be other irregular shapes. By depositing graphene 2 on the surface of the copper substrate 1, and after replacement reaction and cleaning, a silver / graphene composite thermal conductive interface material is obtained, and the shape of the copper substrate can be selected according to the shape of the required thermal conductive interface material.

[0054] A silver / graphene composite thermal conductive interface material is prepared using the silver / graphene composite thermal conductive interface material preparation method.

[0055] The silver / graphene composite thermal conductive interface material prepared by the preparation method of the silver / graphene composite thermal conductive interface material has good thermal conductivity, and the thermal conductive interface material of a desired shape can be prepared according to needs, thereby solving the problem that the existing thermal conductive interface material has poor thermal conductivity and cannot dissipate heat in time during use.

[0056] The technical solution of the present invention is further illustrated below through specific implementation methods.

[0057] In order to facilitate the understanding of the present invention, the present invention is described more fully below. The present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the understanding of the disclosure of the present invention more thorough and comprehensive.

[0058] If no specific techniques or conditions are specified in the examples, the techniques or conditions described in the literature in the field or the product instructions are used. If no manufacturer is specified for the reagents or instruments used, they are all conventional products that can be purchased commercially.

[0059] Example 1

[0060] A method for preparing a silver / graphene composite thermal conductive interface material comprises the following steps:

[0061] A. Surface pretreatment is performed on a copper substrate 1 (a copper sheet having a thickness of 8 μm, a length of 730 μm, a width of 420 μm, and a rectangular shape). The surface pretreatment method is specifically to deposit active metal particles 6 (active metal palladium is used as the active metal particles) at a local position on the surface of the copper substrate 1, and the deposition area of ​​the deposited active metal particles accounts for 50% of the surface area of ​​the copper substrate;

[0062] B. Depositing graphene 2 at the position where the surface of the copper substrate 1 is pre-treated, specifically, using chemical vapor deposition to treat the surface of the copper substrate 1, under the protection of inert gas and the regulation of hydrogen, the carbon source is pyrolyzed and reorganized under the support and catalytic action at the position where the active metal particles 6 on the copper substrate 1 are formed and deposited, and the deposition thickness of the graphene 2 is 0.5 μm;

[0063] C. Immersing the copper substrate 1 on which the graphene 2 is deposited in a silver salt solution 3 (the silver salt solution 3 contains 10% by mass of silver nitrate, 20% by mass of ammonia and a mixture of histidine, and 5% by mass of polyvinyl pyrrolidone), and performing a replacement reaction to replace the outer copper atoms of the copper substrate 1 with silver 4, thereby obtaining a composite primary product of silver and graphene;

[0064] D. The surface of the composite primary product of silver and graphene obtained in step C is cleaned with an ammonium persulfate solution, and then heated at 150° C. for 10 min to obtain a silver / graphene composite thermal conductive interface material. The thermal conductivity of the obtained silver / graphene composite thermal conductive interface material is tested using a four-point probe test method, and the thermal conductivity is measured to be 400 W / (m·K).

[0065] Example 2

[0066] A method for preparing a silver / graphene composite thermal conductive interface material comprises the following steps:

[0067] A. Surface pretreatment is performed on a copper substrate 1 (spherical copper with a radius of 7 μm and a spherical shape). Specifically, the surface pretreatment method includes using a 1 μm laser to prefabricate a groove 5 with a depth of 1 μm on the surface of the copper substrate 1;

[0068] B. Graphene 2 is deposited at the position where the surface of the copper substrate 1 is pretreated. The preparation method of the graphene 2 is specifically to use concentrated sulfuric acid with a mass concentration of 98% to cause graphite to undergo an oxidation-reduction reaction, insert epoxy groups into the graphite sheet, and then use a reducing agent with a mass concentration of 15% (the reducing agent is ascorbic acid) to reduce the graphene 2. The deposition thickness of the graphene 2 is 0.5 μm;

[0069] C. Immersing the copper substrate 1 on which the graphene 2 is deposited in a silver salt solution 3 (the silver salt solution 3 contains 10% by mass of silver nitrate, 20% by mass of histidine, and 6% by mass of polyethylene glycol), and performing a replacement reaction to replace the outer copper atoms of the copper substrate 1 with silver 4, thereby obtaining a composite primary product of silver and graphene;

[0070] D. The surface of the composite primary product of silver and graphene obtained in step C is cleaned with an ammonium persulfate solution, and then heated at 150° C. to obtain a silver / graphene composite thermal conductive interface material. The thermal conductivity of the prepared silver / graphene composite thermal conductive interface material is tested using a four-point probe test method, and the thermal conductivity is measured to be 400 W / (m·K).

[0071] Example 3

[0072] A method for preparing a silver / graphene composite thermal conductive interface material comprises the following steps:

[0073] A. Surface pretreatment is performed on a copper substrate 1 (a copper sheet having a thickness of 8 μm, a length of 730 μm, a width of 420 μm, and a rectangular shape). The surface pretreatment method is specifically to use dilute nitric acid to chemically corrode a local position of the surface of the copper substrate;

[0074] B. Graphene 2 is deposited at the position where the surface of the copper substrate 1 is pretreated. The preparation method of the graphene 2 is specifically to use concentrated sulfuric acid with a mass concentration of 98% to cause graphite to undergo an oxidation-reduction reaction, insert epoxy groups into the graphite sheet, and then use a reducing agent with a mass concentration of 15% (the reducing agent is ascorbic acid) to reduce the graphene. The deposition thickness of the graphene 2 is 0.3 μm;

[0075] C. Immersing the copper substrate 1 on which the graphene 2 is deposited in a silver salt solution 3 (the silver salt solution 3 contains 38% by mass of silver nitrate, 7% by mass of histidine, and 6% by mass of polyethylene glycol), and performing a replacement reaction to replace the outer copper atoms of the copper substrate 1 with silver 4, thereby obtaining a composite primary product of silver and graphene;

[0076] D. The surface of the composite primary product of silver and graphene obtained in step C is cleaned with an ammonium persulfate solution, and then heated at 150° C. to obtain a silver / graphene composite thermal conductive interface material. The thermal conductivity of the prepared silver / graphene composite thermal conductive interface material is tested using a four-point probe test method, and the thermal conductivity is measured to be 300 W / (m·K).

[0077] The above-mentioned embodiments only express several implementation methods of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A method for preparing a silver / graphene composite thermal conductive interface material for electronic products, characterized in that: The following steps are involved: A. performing surface pretreatment on the copper substrate; wherein the surface pretreatment of the copper substrate is performed by using any one of the following methods: prefabricating grooves at a local position on the surface of the copper substrate and depositing active metal particles at a local position on the surface of the copper substrate; B. Depositing graphene at the location where the copper substrate is subjected to surface pretreatment; C. Immersing the copper substrate on which graphene is deposited in a silver salt solution to perform a replacement reaction, so that the outer copper atoms of the copper substrate are replaced by silver, and the silver grows between the graphenes to obtain a composite primary product of silver and graphene; wherein the silver salt solution is a silver nitrate solution, and the silver salt solution contains a complexing agent and a dispersant; D. The composite primary product of silver and graphene is cleaned with an ammonium persulfate solution, and then heated to remove metal oxides and residual copper ion-containing solution, thereby obtaining a silver / graphene composite thermal conductive interface material for electronic products.

2. The method for preparing the silver / graphene composite thermal conductive interface material for electronic products according to claim 1, characterized in that: The active metal particles are any one of cobalt, palladium and nickel.

3. The method for preparing the silver / graphene composite thermal conductive interface material for electronic products according to claim 1, characterized in that: In the step B, the graphene is prepared by chemical vapor deposition, oxidation-reduction method or silicon carbide epitaxial growth method.

4. The method for preparing the silver / graphene composite thermal conductive interface material for electronic products according to claim 1, characterized in that: The complexing agent is one of ammonia water and organic matter containing hydroxyl functional groups or a combination of two thereof, and the dispersant is any one of polyvinyl pyrrolidone, polyethylene glycol and hexadecyltrimethylammonium bromide.

5. The method for preparing the silver / graphene composite thermal conductive interface material for electronic products according to claim 1, characterized in that: The copper substrate is in the form of flakes or particles.

6. Silver / graphene composite thermal conductive interface material for electronic products, characterized in that: The silver / graphene composite thermal conductive interface material for electronic products is prepared using the preparation method of the silver / graphene composite thermal conductive interface material for electronic products as claimed in any one of claims 1 to 5.

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