Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device, and Storage Medium

Abstract

Even in the case of a structure having two processing furnaces, it is possible to pursue space saving by removing the required equipment. It includes: a first furnace body and a second furnace body for processing substrates; at least one heat exchanger that cools the refrigerant discharged from the first furnace body and the second furnace body; at least one exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends it to the downstream side; a first flow path and a second flow path that respectively connect the first furnace body and the second furnace body, and at least one heat exchanger and at least one exhaust blower in a manner that allows the refrigerant to flow; first and second dampers whose opening degrees can be variable, which are respectively provided in the middle of the first flow path and the second flow path and at a position upstream of the heat exchanger; and a controller that controls the heating and cooling of the first furnace body and the second furnace body, and the first flow path and the second flow path are configured to merge in at least a part of their respective sections.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus, a method for manufacturing a semiconductor device, and a program. Background Art

[0002] As an example of a substrate processing apparatus, there is a semiconductor manufacturing apparatus. Further, as an example of a semiconductor manufacturing apparatus, a vertical diffusion / CVD (Chemical Vapor Deposition) apparatus is known. In this vertical diffusion / CVD apparatus, a step of processing a substrate such as a semiconductor or glass under heating is performed. For example, a substrate is housed in a vertical processing furnace, reaction gas is supplied and heated, and a thin film is grown in a gas phase on the substrate. In such a semiconductor manufacturing apparatus, the following steps are performed: cooling the temperature inside the furnace that becomes high during film formation or maintenance, and discharging heat to the outside of the apparatus main body.

[0003] Prior Art Documents

[0004] Patent Documents

[0005] Patent Document 1: Japanese Unexamined Patent Application Publication No. 2014-209569

[0006] Patent Document 2: Japanese Unexamined Patent Application Publication No. 2008-205426

[0007] Patent Document 3: Japanese Unexamined Patent Application Publication No. 2011-066106 Summary of the Invention

[0008] In the above-described substrate processing apparatus, in order to reduce the temperature inside the furnace that becomes high due to heating in a short period of time, a radiator and an exhaust blower are provided. Further, in order to improve productivity, there is a case where a substrate processing apparatus having two processing furnaces is used. In the case of a structure having two processing furnaces, sometimes a radiator and an exhaust blower are provided for each processing furnace respectively.

[0009] An object of the present disclosure is to provide a technique that enables space saving by removing unnecessary equipment even in the case of a structure having two processing furnaces.

[0010] According to one aspect of the present disclosure, there is provided a technique including:

[0011] a first furnace body and a second furnace body that process a substrate;

[0012] at least one heat exchanger that cools a refrigerant discharged from the first furnace body and the second furnace body;

[0013] at least one exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends it to the downstream side;

[0014] A first flow path and a second flow path that respectively connect the first furnace body and the second furnace body to the at least one heat exchanger and the at least one exhaust blower in such a manner that the refrigerant can flow therethrough;

[0015] A first damper and a second damper whose opening degrees are variable, which are respectively located midway in the first flow path and the second flow path and on the upstream side of the heat exchanger; and

[0016] A controller that controls heating and cooling of the first furnace body and the second furnace body,

[0017] The first flow path and the second flow path are configured to merge in at least a part of each of them.

[0018] Advantages of the Invention

[0019] According to the present disclosure, even in the case of a structure having two processing furnaces, it is possible to save space by removing unnecessary equipment. Brief Description of the Drawings

[0020] Figure 1 is a longitudinal sectional view schematically showing a substrate processing apparatus according to an embodiment of the present disclosure.

[0021] Figure 2 is a transverse sectional view schematically showing a substrate processing apparatus according to an embodiment of the present disclosure.

[0022] Figure 3 is a longitudinal sectional view schematically showing a substrate processing apparatus according to an embodiment of the present disclosure.

[0023] Figure 4 is a longitudinal sectional view schematically showing a processing furnace according to an embodiment of the present disclosure.

[0024] Figure 5 is Figure 4 a cross-sectional view of the processing furnace shown, (A) is a cross-sectional view taken along line A-A, (B) is a cross-sectional view taken along line B-B, (C) is a cross-sectional view taken along line C-C, (D) is a cross-sectional view taken along line D-D, and (E) is a cross-sectional view taken along line E-E.

[0025] Figure 6 is a diagram showing a flowchart that shows an example of temperature-related processing in a film forming process according to an embodiment of the present disclosure.

[0026] Figure 7 is showing Figure 6 a diagram of the temperature change inside the furnace in the flowchart shown.

[0027] Figure 8This is a diagram schematically showing the configuration of a controller in a substrate processing apparatus according to an embodiment of the present disclosure and the relationship between the controller and the substrate processing apparatus.

[0028] Figure 9 This is a diagram for explaining the configuration of a temperature control device in a substrate processing apparatus according to an embodiment of the present disclosure.

[0029] Figure 10 (A) to (C) thereof are diagrams schematically showing modified examples of a substrate processing apparatus according to an embodiment of the present disclosure, and (D) is a diagram schematically showing a comparative example. Detailed Embodiments

[0030] In the present embodiment, the substrate processing apparatus 1 is configured as a vertical substrate processing apparatus that performs a substrate processing step such as heat treatment as one step of a manufacturing process in a method for manufacturing a semiconductor device (apparatus).

[0031] As Figures 1 - 3 shown, the substrate processing apparatus 1 includes two adjacent processing modules 3A and 3B. The processing module 3A is composed of a processing furnace 4A and a loading chamber 6A as a first transfer chamber that temporarily houses wafers W as substrates to be transferred in and out of the processing furnace 4A. The processing module 3B is composed of a processing furnace 4B and a loading chamber 6B as a second transfer chamber that temporarily houses wafers W to be transferred in and out of the processing furnace 4B. The loading chambers 6A and 6B are respectively arranged below the processing furnaces 4A and 4B. A transfer chamber 8 equipped with a transfer machine 7 for transferring wafers W is arranged adjacent to the front sides of the loading chambers 6A and 6B. A storage chamber 9 for storing a cassette (front-opening wafer transfer cassette) 5 for storing a plurality of wafers W is connected to the front side of the transfer chamber 8. A loading section 10 is provided on the upper surface or the front surface of the storage chamber 9, and the cassette 5 is transferred in and out of the substrate processing apparatus 1 via the loading section 10.

[0032] Gate valves 13A and 13B are respectively provided on the boundary walls (adjacent surfaces) between the loading chambers 6A and 6B and the transfer chamber 8. Pressure detectors are respectively provided in the transfer chamber 8 and the loading chambers 6A and 6B, and the pressure in the transfer chamber 8 is set lower than the pressure in the loading chambers 6A and 6B. In addition, oxygen concentration detectors are respectively provided in the transfer chamber 8 and the loading chambers 6A and 6B, and the oxygen concentrations in the transfer chamber 8 and the loading chambers 6A and 6B are maintained lower than the oxygen concentration in the atmosphere. As Figure 1As shown, a cleaning unit 11 for supplying clean air into the transfer chamber 8 is provided at the top of the transfer chamber 8, and it is configured such that, for example, an inert gas circulates as clean air within the transfer chamber 8. By circulating and purging the inside of the transfer chamber 8 with an inert gas, a clean gas environment can be set inside the transfer chamber 8. According to such a structure, it is possible to suppress the mixing of fine particles and the like in the loading chambers 6A and 6B into the transfer chamber 8, and it is possible to suppress the formation of a natural oxide film on the wafer W inside the transfer chamber 8 and in the loading chambers 6A and 6B.

[0033] The transfer of the wafer W to the boats 20A and 20B is performed separately in the loading chambers 6A and 6B via the transfer chamber 8. The pressures inside the loading chambers 6A and 6B are set lower than the pressure outside the substrate processing apparatus 1.

[0034] The gases used for substrate processing are supplied into the processing chambers 24A and 24B by a gas supply system described later. The gases supplied by the gas supply system are switched according to the type of film to be formed. Among them, the gas supply system includes a source gas supply section, a reaction gas supply section, and an inert gas supply section. The gas supply system is housed in the supply box 17. In addition, since the supply box 17 is provided commonly for the processing modules 3A and 3B, it is regarded as a common supply box.

[0035] The gases used for substrate processing are discharged from the processing chambers 24A and 24B by a gas exhaust system described later. The gas exhaust system is housed in the exhaust boxes 18A and 18B.

[0036] Pipes 50A as the first flow path and pipes 50B as the second flow path are respectively connected to the furnace inner spaces 14A and 14B of the processing furnaces 4A and 4B. In addition, the pipes 50A and 50B merge on the downstream side and are connected to a pipe 50C as the third flow path. In other words, the pipe 50C is a part of the pipes 50A and 50B and is the part where these pipes 50A and 50B merge for the flow. On the pipe 50C, a radiator 52 as a heat exchanger, an exhaust blower 54, and an equipment exhaust connection portion 55 are provided in order from the upstream side. The radiator 52 cools the refrigerant of the gas that has cooled the furnace inner spaces 14A and 14B to a temperature that can be exhausted in a short time. In addition, the exhaust blower 54 sucks the refrigerant cooled by the radiator 52 and sends it to the equipment exhaust pipe on the downstream side. The radiator 52 and the exhaust blower 54 are provided at substantially the same height toward the rear of the processing furnaces 4A and 4B. The pipes 50A, 50B, and 50C connect the furnace inner space 14A formed inside the heater 12A and the furnace inner space 14B formed inside the heater 12B so that the refrigerant can flow to the equipment exhaust via the radiator 52 and the exhaust blower 54.

[0037] In addition, a damper 53A as a first damper and a damper 53B as a second damper, both of which have variable opening degrees, are respectively provided at positions in the middle of the pipes 50A and 50B and upstream of the radiator 52. The dampers 53A and 53B are preferably provided near the refrigerant outlets of the furnace inner spaces 14A and 14B, respectively, to minimize heat dissipation. In this example, the pipes 50A and 50B merge into the pipe 50C at positions downstream of the dampers 53A and 53B and upstream of the radiator 52, and both the radiator 52 and the exhaust blower 54 are configured to be commonly used for cooling the furnace inner space 14A and the furnace inner space 14B.

[0038] As Figure 2 and Figure 3 shown, the respective structures of the processing modules 3A and 3B, that is, the respective structures in the processing furnaces 4A and 4B and the respective structures in the loading chambers 6A and 6B, are arranged symmetrically left and right and face-symmetrically with the adjacent surfaces (boundary surfaces) of the processing modules 3A and 3B as the symmetry planes. In addition, as Figure 2 shown, the length of the pipe 50A is the same as the length of the pipe 50B, and the pipe 50A and the damper 53A, and the pipe 50B and the damper 53B are arranged symmetrically left and right with the pipe 50C as the center, and the positions of the damper 53A in the pipe 50A and the damper 53B in the pipe 50B are formed in substantially the same manner.

[0039] The radiator 52 and the exhaust blower 54 used during the cooling of the furnace inner spaces 14A and 14B are housed in the cooling box 19. In addition, since the cooling box 19 is commonly provided for the processing modules 3A and 3B, it is regarded as a common cooling box.

[0040] A controller 100 as a controller for controlling them is connected to the gas supply system, the gas exhaust system, the transfer system, and the radiator 52, the exhaust blower 54, the dampers 53A, 53B, etc. The controller 100 is constituted by, for example, a microprocessor (computer) equipped with a CPU, and is configured to control the operation of the substrate processing apparatus 1. An input / output device 102 configured as, for example, a touch panel is connected to the controller 100. One controller 100 can be commonly provided for the processing module 3A and the processing module 3B.

[0041] The storage unit 104 can be a storage device (hard disk, flash memory) built into the controller 100, or a mobile external recording device (such as a semiconductor memory like a USB memory, memory card, etc.). Additionally, the provision of the program to the computer can be carried out using communication means such as a network. The program is read out from the storage unit 104 as needed according to instructions from the input / output device 102, and the controller 100 executes processing based on the read process (recipe). Thereby, the substrate processing apparatus 1 executes the desired processing under the control of the controller 100. The controller 100 is housed in the controller box 105. An instruction to start a process can be given from the outside at random timing for each processing module.

[0042] The controller 100 can control the opening and closing operations of the air dampers 53A and 53B so that the cooling timings do not overlap between the processing furnace 4A and the processing furnace 4B. For example, the controller 100 sets the air damper 53A of the processing furnace 4A on the cooling side to open and the air damper 53B of the processing furnace 4B on the non-cooling side to close, thereby switching the cooling of the furnace interior space 14A and the cooling of the furnace interior space 14B. Therefore, the controller 100 predicts the timings at which the air dampers 53A and 53B will be opened next, and adjusts the start times of the processes performed in the processing modules 3A and 3B so that regardless of whether the periods during which the air dampers 53A and 53B are open do not overlap or overlap, there is a time difference such that the temperature of the processing furnace of the processing module with the air damper that opens first is cooled to below a specified value at the opening time point of the air damper that opens later. That is, the heat treatment timings are made different. For example, the processes of each processing module can be carried out in opposite phases. Additionally, at the end of the rapid cooling of the preceding process, the temperature of the refrigerant decreases, so there are cases where local overlap during the rapid cooling period is tolerated. There are few cases where the start of the process needs to be adjusted, and the independence between the processing modules is maintained to a degree that does not hinder practical applications.

[0043] In addition, a three-way valve can be provided at the confluence point of the pipes 50A and 50B instead of the air dampers 53A and 53B. As the three-way valve, a three-way valve that can not only connect any two of the three ports but also make the three ports communicate simultaneously and be closed simultaneously can be used. In this case, the processes of the two processing furnaces 4A and 4B are also carried out in such a way that the time when the three ports communicate simultaneously is 0 or sufficiently small compared to the rapid cooling period. By using a three-way valve instead of the air dampers 53A and 53B, the number of components can be reduced, and space saving and energy saving (cost reduction) can be achieved. Additionally, it can be that, in addition to the air dampers 53A and 53B, a three-way valve is also provided. Thereby, the pipes 50A and 50B can be connected so as to be selectively connected to the radiator 52 on the downstream side of the air dampers 53A and 53B.

[0044] Since the processing furnace 4A and the processing furnace 4B have the same structure, the following description will be made taking the processing furnace 4 as an example.

[0045] As shown Figure 4 in FIG. 0, the processing furnace 4 includes: a heater 12 as a cylindrical furnace body; a cylindrical reaction tube 16 that is accommodated inside the heater 12 using the furnace interior space 14; and a boat 20 that holds a wafer W to be processed within the reaction tube 16. The boat 20 can load multiple layers of the wafer W in a horizontal state with gaps therebetween, and holds multiple wafers W in the reaction tube 16 in this state. The boat 20 is placed on a lift (not shown) via a boat lid 22 and can be lifted and lowered using this lift. Thus, the loading of the wafer W into the reaction tube 16 and the removal from the reaction tube 16 are performed using the operation of the lift. In addition, the reaction tube 16 forms a processing chamber 24 for accommodating the wafer W, a gas introduction tube (not shown) communicates with the inside of the reaction tube 16, and a gas supply system is connected to the gas introduction tube. Further, a gas exhaust pipe 56 communicates with the inside of the reaction tube 16 to exhaust the inside of the processing chamber 24.

[0046] The heater 12 has a cylindrical shape and is configured to include: a heat insulation structure formed by laminating multiple heat insulation bodies; and a heating part 30 as a heating element that heats the furnace interior space 14 inside the heat insulation structure. The heating part 30 is provided inside the heater 12 in a manner divided into multiple regions. The heater 12 heats the wafer W inside the heater 12 to perform heat treatment.

[0047] The heat insulation structure has: a side wall part 32 as a heat insulation part formed in a cylindrical shape; and an upper wall part 33 as a heat insulation part formed to cover the upper end of the side wall part 32.

[0048] The side wall part 32 is formed in a multi-layer structure and is composed of a side wall outer layer 32a formed on the outer side in the multiple layers of the side wall part 32 and a side wall inner layer 32b formed on the inner side in the multiple layers. A cylindrical space 34 as a refrigerant passage is formed between the side wall outer layer 32a and the side wall inner layer 32b. And the heating part 30 is provided inside the side wall inner layer 32b, and the inside of the heating part 30 becomes the furnace core. In addition, although the side wall part 32 is a structure formed by laminating multiple heat insulation bodies, it goes without saying that it is not limited to such a structure.

[0049] A refrigerant supply port 36 for supplying a refrigerant such as air into the processing furnace 4 (inside the heater 12) is formed in the side part of the upper wall part 33 or the upper part of the side wall outer layer 32a. In addition, a refrigerant discharge port 43 for discharging the refrigerant from the processing furnace 4 (inside the heater 12) is formed in the lower part of the side wall outer layer 32a.

[0050] As Figure 5As shown in (A) of FIG. , a pipe 38a serving as a buffer region that communicates with the refrigerant supply port 36 and the cylindrical space 34 is provided at the upper end of the cylindrical space 34 and in a substantially horizontal direction of the refrigerant supply port 36. In the present embodiment, the refrigerant supply port 36 is provided in a ring shape, but it goes without saying that it is not limited to this form. In the upper wall portion 33, a circular rapid cooling exhaust port 40 is formed on the central axis of the heater 12, and the rapid cooling exhaust port 40 opens into the furnace interior space 14. Further, a refrigerant discharge port 42 is formed above the pipe 38a and on the side surface of the upper wall portion 33, and communicates with the rapid cooling exhaust port 40.

[0051] As shown in Figure 5 As shown in (E) of FIG. , a pipe 38b serving as a buffer region that communicates with the refrigerant discharge port 43 and the cylindrical space 34 is provided at the lower end of the cylindrical space 34 and in a substantially horizontal direction of the refrigerant discharge port 43. The pipe 38b is in a ring shape, and its cross-sectional area is formed wider than the cross-sectional area of either the refrigerant discharge port 43 or the cylindrical space 34.

[0052] That is, pipes 38a and 38b serving as buffer regions that are formed wider than the cylindrical space 34 are provided at both ends of the cylindrical space 34.

[0053] Further, a throttle portion 37a that narrows the refrigerant passage of the cylindrical space 34 (reduces the cross-sectional area of the refrigerant passage) to reduce the refrigerant flow rate is provided at the boundary between the pipe 38a and the cylindrical space 34. That is, as shown in Figure 5 As shown in (B) of FIG. , a plurality of throttle holes 41a are formed equidistantly in the circumferential direction at the boundary surface between the pipe 38a and the cylindrical space 34.

[0054] Further, a throttle portion 37b that narrows the refrigerant passage of the cylindrical space 34 (reduces the cross-sectional area of the refrigerant passage) to reduce the refrigerant flow rate is provided at the boundary between the pipe 38b and the cylindrical space 34. That is, as shown in Figure 5 As shown in (D) of FIG. , a plurality of throttle holes 41b are formed equidistantly in the circumferential direction at the boundary surface between the pipe 38b and the cylindrical space 34.

[0055] Further, the cross-sectional area of the throttle hole 41a is formed larger than the cross-sectional area of the throttle hole 41b. Further, the sum of the cross-sectional areas of the plurality of throttle holes 41a is formed smaller than the cross-sectional area of either the pipe 38a or 38b.

[0056] Further, as shown in Figure 5 As shown in (C) of FIG. , a plurality of blow holes 35 that communicate the cylindrical space 34 and the furnace interior space 14 are formed in the inner layer 32b of the side wall below the refrigerant supply port 36 in a required distribution, as shown in Figure 4The illustrated structure enables the cylindrical space 34 to communicate with the furnace interior space 14 substantially horizontally. That is, it is configured such that the refrigerant is blown from the cylindrical space 34 into the furnace interior space 14.

[0057] In addition, the refrigerant discharge ports 42 and 43 are respectively connected to the exhaust pipes 45a and 45b and merge in the pipe 50. Specifically, the exhaust pipes 45a and 45b of the processing furnaces 4A and 4B merge into the pipes 50A and 50B respectively. And the pipes 50A and 50B merge at the pipe 50C. A radiator 52 and an exhaust blower 54 are connected to the pipe 50C from the upstream side. An equipment exhaust pipe 55 is connected to the exhaust blower 54. The heated refrigerant in the heaters 12A and 12B is discharged to the clean room exterior where the substrate processing apparatus 1 is installed via these pipes 50, radiator 52, exhaust blower 54, and equipment exhaust pipe 55.

[0058] Among them, a damper 39a, which is an openable and closable valve, is provided near the refrigerant supply port 36 in the pipe 38a. In addition, an openable and closable damper 39b is provided near the refrigerant discharge port 42 in the pipe 50 and the pipe 50. Also, an openable and closable damper 39c is provided near the refrigerant discharge port 43 and the pipe 38b. And by arranging the dampers 39b and 39c near the pipe 50 or the pipe 38b, the influence of convection from the pipe at the discharge port during non-use can be reduced, and the temperature uniformity inside the substrate around the pipe can be made good.

[0059] Moreover, the supply of the refrigerant is operated by opening and closing the damper 39a and turning on and off (ON / OFF) the exhaust blower 54. The cylindrical space 34 is closed and opened by opening and closing the damper 39b or the damper 39c and turning on and off the exhaust blower 54, so as to discharge the refrigerant from the refrigerant discharge port 42 or the refrigerant discharge port 43 respectively.

[0060] In addition, a pressure sensor 131 for detecting the pressure on the upstream side of the exhaust blower 54 is provided on the downstream side of the radiator 52 in the pipe 50C and on the upstream side of the exhaust blower 54.

[0061] The exhaust blower control device 80 is composed of a subtractor 1002, a PID arithmetic unit 1004, a speed converter 1006, and a speed indicator 1008. The pressure target value S is input from the process control device 81 to the subtractor 1002. In addition to the pressure target value S, the pressure value A measured by the pressure sensor 131 is also input to the subtractor 1002, and the subtractor 1002 outputs the deviation D obtained by subtracting the pressure value A from the pressure target value S. Among them, the pressure target value S is a value that maintains a specified negative pressure on the intake side of the exhaust blower 54 compared to the atmospheric pressure.

[0062] The deviation D is input to the PID controller 1004. In the PID controller 1004, a PID operation is performed based on the input deviation D, and the operation amount X is calculated. The calculated operation amount X is input to the rotational speed converter 1006, and is converted into a rotational speed T by the rotational speed converter 1006 and output. The output rotational speed T is input to the inverter 132 to change the rotational speed of the exhaust blower 54.

[0063] The pressure value A from the pressure sensor 131 is always or at a prescribed time interval input to the subtractor 1002, and based on this pressure value A, the rotational speed of the exhaust blower 54 is continuously controlled so that the deviation D between the pressure target value S and the pressure value A becomes 0. As described above, the rotational speed of the exhaust blower 54 is controlled via the inverter 132 in such a manner that the deviation D between the pressure value A measured by the pressure sensor 131 and the pre-determined pressure target value S disappears. That the pressure A indicated by the pressure sensor 131 is higher than the pressure target value S indicates some abnormality, and the pressure A can be checked on a daily basis.

[0064] Alternatively, instead of calculating the rotational speed T using the PID controller 1004, a rotational speed set value T may be input from the process control device 81 to the rotational speed indicator 1008, and the rotational speed T may be input from the rotational speed indicator 1008 to the inverter 132, thereby changing the rotational speed of the exhaust blower 54. Further, a flow rate sensor may be used instead of the pressure sensor 131 to perform control in such a manner that the flow rate in the pipe 50C is made constant.

[0065] Next, use Figure 6 and Figure 7 to illustrate an example of the film forming process performed in the processing furnace 4. Figure 6 is a flowchart showing an example of the temperature-related process in the film forming process performed in the processing furnace 4, Figure 7 is a diagram schematically showing the temperature change in the furnace. The reference numerals S1 to S6 described in Figure 7 represent the respective steps S1 to S6 of performing Figure 6 .

[0066] Step S1 is a process of stabilizing the temperature in the furnace at a relatively low temperature T0. In step S1, the wafer W has not yet been inserted into the furnace.

[0067] Step S2 is a process of inserting the wafer W held in the boat 20 into the furnace. Since the temperature of the wafer W is lower than the temperature T0 in the furnace at this time, as a result of inserting the wafer W into the furnace, the temperature in the furnace temporarily becomes lower than T0, and the temperature in the furnace is made to stabilize again at the temperature T0 after a certain period of time using the temperature control device 74 etc. described later.

[0068] Step S3 is a process of raising the temperature in the furnace from the temperature T0 to the target temperature T1 for performing the film forming process on the wafer W at a constant rate.

[0069] Step S4 is a process of maintaining and stabilizing the temperature in the furnace at the target temperature T1 in order to perform a film formation process on the wafer W.

[0070] Step S5 is a process of reducing the temperature in the furnace from the temperature T1 to a relatively low temperature T0 again at a constant rate after the film formation process is completed.

[0071] Step S6 is a process of pulling out the wafer W on which the film formation process has been performed together with the boat 20 from the furnace.

[0072] In the case where there remains an untreated wafer W on which a film formation process should be performed, the processed wafer W on the boat 20 is replaced with an untreated wafer W, and these series of processes of steps S1 to S6 are repeated.

[0073] The processes of steps S1 to S6 all proceed to the next step after obtaining a stable state in which the furnace temperature is within a predetermined small temperature range with respect to the target temperature and this state continues for a predetermined time. Alternatively, recently, for the purpose of increasing the number of wafers W on which the film formation process is performed within a certain time, a process of transferring to the next step without obtaining a stable state in steps S1, S2, S5, S6, etc. is also performed.

[0074] Inside the reaction tube 16, the first temperature sensors 27-1, 27-2, 27-3, and 27-4 for detecting the substrate temperature are sequentially provided from above inside the reaction tube 16 in a manner parallel to the boat 20. The first temperature sensors 27-1, 27-2, 27-3, and 27-4 are respectively used as substrate temperature sensors for detecting the temperature corresponding to the temperature of the wafer W in the heater regions U, CU, CL, and L from above the heater 12.

[0075] In addition, the second temperature sensors 70-1, 70-2, 70-3, and 70-4 for detecting the heater temperature are sequentially provided from above inside the furnace space 14 in a manner parallel to the reaction tube 16. The second temperature sensors 70-1, 70-2, 70-3, and 70-4 are respectively used as heater temperature sensors for detecting the temperature corresponding to the temperature of the furnace space or the heating part 30 in the heater regions U, CU, CL, and L from above the heater 12.

[0076] Next, the process in the case where the furnace temperature is suitable will be described.

[0077] When the furnace temperature is suitable and stable, the damper doors 39a, 39b, and 39c are all closed, and the exhaust blower 54 also stops (furnace temperature stable control state). At this time, the refrigerant in the cylindrical space 34 serving as the refrigerant passage becomes a stationary state and has a high energy-saving effect. That is, it is Figure 6 、Figure 7 The state in step S4 (during the film formation process of the wafer W).

[0078] Next, the rapid cooling process of the inside of the rapid cooling furnace will be described.

[0079] During rapid cooling, the air damper 39c is closed, the air damper 39a is opened and the air damper 39b is opened and the exhaust blower 54 is operated (rapid cooling control state). The refrigerant supplied from the refrigerant supply port 36 is homogenized by the throttling portion 37a via the pipe 38a and then introduced into the cylindrical space 34. The refrigerant introduced into the cylindrical space 34 descends in the cylindrical space 34 and is introduced into the furnace interior space 14 via the blow holes 35. The refrigerant introduced into the furnace interior space 14 rises in the furnace interior space 14 and is discharged from the refrigerant discharge port 42 via the rapid cooling exhaust port 40, cooling the heating portion 30 from both the outer surface and the inner surface. That is, the heated refrigerant in the heater 12 is released to the outside via the refrigerant discharge port 42 to lower the temperature inside the heater 12. That is, it is Figure 6 、 Figure 7 The state in step S5 (after the film formation process of the wafer W and before unloading the boat). Such rapid cooling treatment can be performed when cooling the wafer after the film formation process, when unloading the boat, when discharging the wafer, when forcibly peeling off and removing the deposited film, etc. The cooling rate of the rapid cooling treatment is more than 5 times that of natural cooling, for example, 15 °C / min or more.

[0080] Next, the process of restoring the temperature inside the furnace will be described.

[0081] During temperature recovery, the air damper 39b is closed, the air damper 39a is opened and the air damper 39c is opened and the exhaust blower 54 is operated (temperature recovery control state). The refrigerant supplied from the refrigerant supply port 36 is homogenized by the throttling portion 37a via the pipe 38a and then supplied to the cylindrical space 34. After being homogenized by the throttling portion 37b without passing through the furnace interior space 14 and the rapid cooling exhaust port 40, it is exhausted from the refrigerant discharge port 43 via the pipe 38b. By cooling the side wall portion 32 while keeping the heating portion 30 heated in this way, the peak of the radiation spectrum inside the heater 12 is shifted to the high temperature side, effectively heating the wafer W at the furnace center.

[0082] The temperature control device 74 controls the opening and closing of the air dampers 39a, 39b, 39c by the air damper control device 82 and the rotation of the exhaust blower 54 by the exhaust blower control device 80 according to the conditions of the temperature control modes such as the above-mentioned in-furnace temperature stable control state, rapid cooling control state, and control state during temperature recovery, thereby maintaining good substrate temperature uniformity and being able to take into account the temperature recovery characteristics and reduction of power consumption. That is, the controller 100 controls the heating of the heating parts 30 of the heater regions U, CU, CL, L by the heater driving devices 76-1 to 76-4, the opening and closing of the air dampers 39a, 39b, 39c by the air damper control device 82, the opening and closing of the air dampers 53A, 53B by the air damper control device 82, and the rotation of the radiator 52 and the exhaust blower 54 in such a way that the wafers W are heat-treated at independent timings in the heaters 12A and 12B respectively. That is to say, the controller 100 adjusts the opening degrees of the air dampers 39b, 39c in the heaters 12A and 12B respectively and cools the heaters 12A and 12B at different temperatures at a common specified cooling rate.

[0083] Figure 8 FIG. is a diagram schematically showing the configuration of the controller 100 that controls the substrate processing apparatus 1 and the relationship between the controller 100 and the processing furnace 4.

[0084] As Figure 8 shown, the controller 100 includes a flow rate control device 78, a temperature control device 74, heater driving devices 76-1, 76-2, 76-3, 76-4, an exhaust blower control device 80, an air damper control device 82, and a process control device 81.

[0085] The flow rate control device 78 adjusts the flow rate of the gas supplied into the processing chamber 24 by using the gas flow rate adjuster 62 based on the detection result of the flow rate sensor 64. The gas flow rate adjuster 62 adjusts the flow rate of the gas introduced into the reaction tube 16 via a gas introduction nozzle (not shown). The flow rate sensor 64 measures the flow rate of the gas supplied into the reaction tube 16 via the gas introduction nozzle.

[0086] The temperature control device 74 divides the heater 12 into four regions, namely, heater regions U, CU, CL, and L from above, and controls the corresponding heater driving devices 76-1, 76-2, 76-3, 76-4 respectively. Specifically, the temperature control device 74 controls the heater driving device 76-1 based on the detected temperatures detected by the first temperature sensor 27-1 and the second temperature sensor 70-1 disposed in the heater region U. The other regions are controlled in the same manner.

[0087] The damper control device 82 controls the opening degrees of dampers 39a, 39b, and 39c and the opening and closing of dampers 53A and 53B according to the temperature control mode (process) determined by the process control device 81. In addition, in a specified temperature control mode other than the rapid cooling control state, the openings provided by the temperature control device 74 are used to control dampers 39b and the like.

[0088] The exhaust blower control device 80 controls the rotational speed of the exhaust blower 54 based on the pressure value detected by the pressure sensor 131.

[0089] The controller 100 uses these components to control each component of the semiconductor manufacturing device as the substrate processing device 1 based on the set values of temperature, pressure, and flow rate set from the storage unit 104 or the input / output device 102.

[0090] Next, use Figure 9 to describe the control method performed inside the temperature control device 74. In addition, the set temperature and the input terminals S, A, B, and the output terminal F respectively have amounts corresponding to the number of the first temperature sensors 27-1, 27-2, 27-3, and 27-4. The set temperature in each heater region U, CU, CL, and L is input to the input terminal S from the process control device 81. The substrate temperatures from the first temperature sensors 27-1, 27-2, 27-3, and 27-4 are input to the input terminal A. The heater temperatures from the second temperature sensors 70-1, 70-2, 70-3, and 70-4 are input to the input terminal B.

[0091] In Figure 9 a cascade control loop for the heater region U is shown.

[0092] The temperature control device 74 is composed of a subtracter 521, a PID calculator 522, a subtracter 523, a PID calculator 524, a filter 525, a subtracter 526, a PD calculator 527, a converter 528, and a reference table 529.

[0093] The set temperature S of the heater region U is input to the subtracter 521 from the process control device 81. In addition to the set temperature S, the detected temperature A detected by the first temperature sensor 27-1 is also input to the subtracter 521, and the subtracter 521 outputs the deviation C obtained by subtracting the detected temperature A from the set temperature S.

[0094] The deviation C is input to the PID calculator 522. In the PID calculator 522, a PID operation is performed based on the input deviation C, and the operation amount D is calculated. The calculated operation amount D is input to the subtracter 523.

[0095] The detected temperature B detected by the second temperature sensor 70-1 is input to the subtracter 523, and the subtracter 523 outputs the deviation E obtained by subtracting the detected temperature B from the target temperature for the heater temperature based on the operation amount D.

[0096] The deviation E is input to the PID arithmetic unit 524. In the PID arithmetic unit 524, a PID operation is performed based on the input deviation E, and the operation amount F is calculated.

[0097] The calculated operation amount F is input to the heater drive device 76-1. The heater drive device 76-1 adjusts the conduction angle of the thyristor based on the input operation amount F, and controls the electric power amount (supply power) of the heating unit 30 for the heater region U.

[0098] Similarly, the heater drive devices 76-2, 76-3, and 76-4 respectively control the electric power amount (supply power) of the heating unit 30 for the heater regions CU, CL, and L based on the operation amount F calculated by using the set temperature, the input terminal S, the input terminal A, and the input terminal B in the heater regions CU, CL, and L.

[0099] In addition, the operation amount F is input to the subtracter 526 via the filter 525. The filter 525 is a filter that smoothes the operation amount F in the time domain and outputs it as the operation amount f, and can calculate the smoothed value of the operation amount F for a time of one cycle or more based on the resonance frequency of the control system. In addition, when a negative operation amount F is input, the operation amount f of 0 can be immediately output. The reference amount G is input to the subtracter 526 from the reference table 529.

[0100] The reference table 529 stores, for example, the operation amount F in the steady state for each region and for each set temperature, and outputs it as the reference amount. In addition, the reference amount can be continuously adjusted in a manner of rapid convergence according to states such as the furnace internal temperature stable control state, constant speed heating, constant speed cooling, and transitions between these states. For example, when transitioning from constant speed heating to the furnace internal temperature stable control state, in order to perform heating and cooling simultaneously and improve the responsiveness, the reference amount can be temporarily reduced. In addition, in the furnace internal temperature stable control state, the reference amount can be set large so that cooling does not easily work.

[0101] The subtracter 526 outputs the deviation H obtained by subtracting the operation amount f from the reference amount G. A positive deviation H indicates that the heater should be cooled.

[0102] The deviation H is input to the PD arithmetic unit 527. In the PD arithmetic unit 527, a PD operation is performed based on the input deviation H, and the operation amount I is calculated.

[0103] The calculated operation amount I is converted by the converter 528 into the opening degree of the damper 39b. In addition, the negative operation amount I is converted into 0 (fully closed), and the operation amount I equal to or more than the specified value is converted into fully open. Then, the damper control device 82 controls the opening degree of the damper 39b based on the converted opening degree.

[0104] In this example, the opening degree of the damper 39b uses the operation amount F of the heating part 30 in the heater area U as the control amount, but it can also be the operation amount of other heater areas. For example, the weighted average of the operation amounts F of the heating parts 30 in the heater areas U, CU, CL, and L can also be used as the control amount. In addition, the operation amount (supply power) of the heating part 30 in the actual heater area U is non-negative, but the operation amount F can also be negative.

[0105] In this way, the controller 100 can control the calorific value of the heating part 30 in each heater area U, CU, CL, and L while referring to the detected temperatures of the second temperature sensors 70-1 to 70-4, so that the detected temperatures of the first temperature sensors 27-1 to 27-4 respectively follow the target values. And during rapid cooling, etc., while referring to the detected temperatures of the second temperature sensors 70-1 and 70-4, the opening degrees of the damper 39b and the damper 39c are respectively adjusted so that the detected temperatures of the first temperature sensors 27-1 and 27-4 follow the target values.

[0106] (Modification example)

[0107] Several modification examples will be described below.

[0108] (Modification example 1)

[0109] Figure 10 (A) is a top view schematically showing an example of the heater 12A and 12B parts of the substrate processing apparatus according to Modification example 1.

[0110] As Figure 10As shown in (A), pipes 50A and 50B are respectively connected inside heaters 12A and 12B. Further, pipe 50A and pipe 50B merge on the downstream side and are connected to pipe 50C. On pipe 50C, a high-performance radiator 152 and a high-performance exhaust blower 154 are provided from the upstream side. In addition, air dampers 53A and 53B with variable opening degrees are respectively provided at positions in the middle of pipes 50A and 50B and upstream of radiator 152. That is, pipes 50A and 50B merge at pipe 50C, and both the high-performance radiator 152 and the high-performance exhaust blower 154 are configured to be commonly used for the rapid cooling of heater 12A and heater 12B. In this modified example, high-performance radiators and exhaust blowers are used as radiator 152 and exhaust blower 154, so that air dampers 53A and 53B can be opened simultaneously to rapidly cool heater 12A and heater 12B at the same time. At this time, it is preferable to use a radiator 152 etc. that has a margin in terms of performance to the extent that the required cooling rate can be obtained even if air dampers 53A and 53B are not fully opened. Thereby, adjustment of the start time of the process is not required, and the independence between processing modules 3A and 3B can be ensured. In addition, for example, even when air damper 53A is set to open and air damper 53B is set to close to rapidly cool only heater 12A, the rapid cooling time can be shortened.

[0111] (Modified Example 2)

[0112] Figure 10 (B) is a top view schematically showing an example of the heater 12A and heater 12B parts of the substrate processing apparatus of Modified Example 2.

[0113] As shown in Figure 10 (B), pipes 50A and 50B are respectively connected inside heaters 12A and 12B. Further, pipe 50A and pipe 50B merge on the downstream side and are connected to pipe 50C. A high-performance exhaust blower 154 is provided on pipe 50C. In addition, radiators 52A and 52B are respectively provided on pipes 50A and 50B. In addition, air dampers 53A and 53B with variable opening degrees are respectively provided at positions in the middle of pipes 50A and 50B and upstream of radiators 52A and 52B. That is, pipes 50A and 50B merge at pipe 50C, and the high-performance exhaust blower 154 is configured to be commonly used for the rapid cooling of heater 12A and heater 12B. In this modified example, a high-performance exhaust blower is used as exhaust blower 154, whereby air dampers 53A and 53B can be opened simultaneously to rapidly cool heater 12A and heater 12B in parallel.

[0114] (Modified Example 3)

[0115] Figure 10Fig. (C) is a top view schematically showing an example of the heater 12A and 12B portions of the substrate processing apparatus according to Modification 3.

[0116] As Figure 10 shown in Fig. (C), pipes 50A and 50B are respectively connected to the heaters 12A and 12B. In addition, the pipes 50A and 50B merge in the middle and are connected to the pipe 50C. The pipe 50A is composed of a pipe 50A-1 on the upstream side of the pipe 50C and a pipe 50A-2 on the downstream side of the pipe 50C. The pipe 50B is composed of a pipe 50B-1 on the upstream side of the pipe 50C and a pipe 50B-2 on the downstream side of the pipe 50C. Damper 53A-1 and 53B-1 with variable opening degrees are respectively provided in the pipes 50A-1 and 50B-1. Exhaust blowers 54A and 54B are respectively provided in the pipes 50A-2 and 50B-2. Dampers 53A-2 and 53B-2 with variable opening degrees are respectively provided on the upstream side of the exhaust blowers 54A and 54B in the pipes 50A-2 and 50B-2. A high-performance radiator 152 is provided in the pipe 50C. That is, the pipes 50A and 50B merge at the pipe 50C, and the radiator 152 is configured to be commonly used for the rapid cooling of the heater 12A and the heater 12B. In this modification, a high-performance radiator is used as the radiator 152. Therefore, the dampers 53A-1, 53A-2 and the dampers 53B-1, 53B-2 can be opened simultaneously to rapidly cool the heater 12A and the heater 12B simultaneously.

[0117] (Comparative Example)

[0118] Figure 10 Fig. (D) is a top view schematically showing an example of the processing furnace portion of the substrate processing apparatus according to the comparative example.

[0119] As Figure 10 shown in Fig. (D), pipes 50A and 50B are respectively connected to the heaters 12A and 12B. In addition, radiators 52A and 52B and exhaust blowers 54A and 54B are respectively provided in the pipes 50A and 50B. In addition, dampers 53A and 53B with variable opening degrees are respectively provided at the middle of the pipes 50A and 50B and at a position upstream of the radiators 52A and 52B. That is, radiators 52 and exhaust blowers 54 are respectively provided for the heaters 12A and 12B.

[0120] That is, according to the present embodiment and the modification, compared with the comparative example, the number of components is small. Therefore, the substrate processing apparatus can be made more space-saving and energy-saving.

[0121] According to the present embodiment, one or more of the following effects can be obtained.

[0122] 1) Between multiple processing furnaces, it is possible to balance the contradictory conditions of high productivity and space saving, and the temperature inside the furnace can be rapidly reduced. In particular, by staggering the progress of the processes between multiple processing modules so that simultaneous rapid cooling does not occur starting from the maximum process temperature, miniaturization of the radiator 52 and the exhaust blower 54 can be achieved.

[0123] 2) At least one of the radiator and the exhaust blower is shared among multiple processing furnaces. Therefore, by removing these devices, space saving and resource saving can be achieved. In addition, the number of inspection parts is reduced and maintenance becomes easier.

[0124] 3) Between multiple processing furnaces, even if a part or all of the rapid cooling periods overlap, rapid cooling can be performed at a determined cooling rate, the film quality formed on the wafer can be made equal, and the thermal history of the reaction tube 16 can be made equal.

[0125] 4) By arranging each structure symmetrically left and right with the boundary surface of the processing module as the symmetry plane, deviation in film formation quality between the left and right processing modules can be suppressed. In addition, film formation can be performed under the same conditions in the left and right processing modules, and the film formation quality can be made consistent. Therefore, productivity can be increased. Moreover, by arranging the pipes and dampers connected to each processing module symmetrically left and right with the pipe where these pipes merge as the center, deviation in film formation quality between the left and right processing modules can be suppressed. In addition, film formation can be performed under the same conditions in the left and right processing modules, and the film formation quality can be made consistent. Therefore, productivity can be increased.

[0126] Description of Reference Numerals

[0127] 1: Substrate processing apparatus,

[0128] 3: Processing module,

[0129] 4: Processing furnace,

[0130] 12: Heater,

[0131] 16: Reaction tube,

[0132] 52: Radiator (heat exchanger),

[0133] 53: Damper,

[0134] 54: Exhaust blower,

[0135] 100: Controller.

Claims

1. A substrate processing apparatus, comprising: A first furnace body and a second furnace body that respectively house reaction tubes for processing substrates; A heat exchanger that cools the refrigerant discharged from the first furnace body and the second furnace body; An exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends it to the downstream side; A first flow path that connects the first furnace body to between the heat exchanger and the exhaust blower in a manner that allows the refrigerant to flow; A second flow path that connects the second furnace body to between the heat exchanger and the exhaust blower in a manner that allows the refrigerant to flow; A first damper and a second damper whose opening degrees can be changed, which are respectively provided in the middle of the first flow path and the second flow path and at a position upstream of the heat exchanger; A first opening / closing damper and a second opening / closing damper, which are respectively provided near the refrigerant supply port of the first furnace body and the second furnace body or near the refrigerant discharge port of the first furnace body and the second furnace body; And A controller that controls the heating and cooling of the first furnace body and the second furnace body, The controller has a damper control device that controls the opening degrees of the first opening / closing damper and the second opening / closing damper, and the opening and closing of the first damper and the second damper according to the determined temperature control mode, The first flow path and the second flow path are configured to merge at a position downstream of the first damper and the second damper and upstream of the heat exchanger, The substrate processing apparatus further includes: a first transfer chamber that temporarily houses substrates transferred in and out of the inside and outside of the first furnace body; and a second transfer chamber that temporarily houses substrates transferred in and out of the inside and outside of the second furnace body, The structures inside the first furnace body and inside the first transfer chamber, and the structures inside the second furnace body and inside the second transfer chamber are arranged symmetrically left and right with the adjacent surface between the first transfer chamber and the second transfer chamber as the symmetry plane.

2. A substrate processing apparatus, comprising: A first furnace body and a second furnace body that respectively house reaction tubes for processing substrates; A heat exchanger that cools the refrigerant discharged from the first furnace body and the second furnace body; An exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends it to the downstream side; A first flow path that connects the first furnace body to between the heat exchanger and the exhaust blower in a manner that allows the refrigerant to flow; A second flow path that connects the second furnace body to between the heat exchanger and the exhaust blower in a manner that allows the refrigerant to flow; A first damper and a second damper whose opening degrees can be changed, which are respectively provided in the middle of the first flow path and the second flow path and at a position upstream of the heat exchanger; A first opening / closing damper and a second opening / closing damper, which are respectively provided near the refrigerant supply port of the first furnace body and the second furnace body or near the refrigerant discharge port of the first furnace body and the second furnace body; And A controller that controls the heating and cooling of the first furnace body and the second furnace body, The controller has a damper control device that controls the opening degrees of the first on-off damper and the second on-off damper, and the opening and closing of the first damper and the second damper according to the determined temperature control mode. The first flow path and the second flow path are configured to merge at a position downstream of the first damper and the second damper and upstream of the heat exchanger. The first flow path and the first damper, and the second flow path and the second damper are arranged symmetrically left and right.

3. A substrate processing apparatus, comprising: A first furnace body and a second furnace body that respectively house reaction tubes for processing substrates; A heat exchanger that cools the refrigerant discharged from the first furnace body and the second furnace body; An exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends it downstream; A first flow path that connects the first furnace body to between the heat exchanger and the exhaust blower in such a manner that the refrigerant can flow through; A second flow path that connects the second furnace body to between the heat exchanger and the exhaust blower in such a manner that the refrigerant can flow through; First and second dampers whose opening degrees can be varied, which are respectively provided midway in the first flow path and the second flow path and at a position upstream of the heat exchanger; A first on-off damper and a second on-off damper, which are respectively provided near the refrigerant supply port or the refrigerant discharge port of the first furnace body and the second furnace body; And A controller that controls the heating and cooling of the first furnace body and the second furnace body, The controller has a damper control device that controls the opening degrees of the first on-off damper and the second on-off damper, and the opening and closing of the first damper and the second damper according to the determined temperature control mode. The first flow path and the second flow path are configured to merge at a position downstream of the first damper and the second damper and upstream of the heat exchanger. The heat exchanger and the exhaust blower are provided at substantially the same height behind the first furnace body and the second furnace body.

4. A substrate processing apparatus, comprising: A first furnace body and a second furnace body that respectively house reaction tubes for processing substrates; A heat exchanger that cools the refrigerant discharged from the first furnace body and the second furnace body; An exhaust blower that sucks the refrigerant discharged from the heat exchanger and sends it downstream; A first flow path that connects the first furnace body to between the heat exchanger and the exhaust blower in such a manner that the refrigerant can flow through; A second flow path that connects the second furnace body to between the heat exchanger and the exhaust blower in such a manner that the refrigerant can flow through; First and second dampers whose opening degrees can be varied, which are respectively provided midway in the first flow path and the second flow path and at a position upstream of the heat exchanger; A first on-off damper and a second on-off damper, which are respectively provided near the refrigerant supply port or the refrigerant discharge port of the first furnace body and the second furnace body; And A controller that controls the heating and cooling of the first furnace body and the second furnace body, The controller has a damper control device that controls the opening degrees of the first opening / closing damper and the second opening / closing damper, and the opening and closing of the first damper and the second damper according to the determined temperature control mode. The first flow path and the second flow path are configured to merge at a position downstream of the first damper and the second damper and upstream of the heat exchanger. The controller predicts the timing at which the first damper and the second damper are to be opened next, and adjusts the start times of the processes performed in the first furnace body and the second furnace body so that, regardless of whether the opening periods of the first damper and the second damper overlap or not, there is a time difference such that the temperature of the first furnace body or the second furnace body having the first damper or the second damper that is opened first is cooled below a specified value at the opening time point of the second damper that is opened later.

5. The substrate processing apparatus according to any one of claims 1 to 4, wherein The controller is configured to be able to control in such a manner that: by adjusting the opening degrees of the first damper and the second damper or the first opening / closing damper and the second opening / closing damper, the first furnace body and the second furnace body at different temperatures are cooled in parallel by the refrigerant at a common specified cooling rate.

6. The substrate processing apparatus according to any one of claims 1 to 4, wherein The controller is configured to be able to control in such a manner that: in the first furnace body and the second furnace body, the substrate is heat-treated at different timings, and by adjusting the opening degrees of the first damper and the second damper or the first opening / closing damper and the second opening / closing damper, the first furnace body and the second furnace body at different temperatures are cooled in parallel by the refrigerant at a common specified cooling rate.

7. The substrate processing apparatus according to claim 5, wherein The first furnace body and the second furnace body each have: A heating element that is provided inside the furnace body in a divided manner into a plurality of regions; A heater temperature sensor that detects the temperature corresponding to the temperature of the furnace body or the heating element for each of the regions; And A substrate temperature sensor that detects the temperature corresponding to the temperature of the substrate for each of the regions, The controller is configured to be able to, for each of the regions, control the calorific value of the heating element while referring to the detected temperature of the heater temperature sensor so that the detected temperature of the substrate temperature sensor follows a target value, and when cooling the first furnace body and the second furnace body, adjust the opening degree while referring to the detected temperature of the heater temperature sensor so that the detected temperature of the substrate temperature sensor follows a target value that decreases at a specified cooling rate.

8. The substrate processing apparatus according to claim 6, wherein The first furnace body and the second furnace body each have: A heating element that is provided inside the furnace body in a divided manner into a plurality of regions; A heater temperature sensor that detects the temperature corresponding to the temperature of the furnace body or the heating element for each of the regions; And A substrate temperature sensor that detects a temperature corresponding to the temperature of the substrate for each of the regions. The controller is configured to be able to control the calorific value of the heating element for each of the regions while referring to the detected temperature of the heater temperature sensor so that the detected temperature of the substrate temperature sensor follows a target value, and, when cooling the first furnace body and the second furnace body, adjust the opening degree while referring to the detected temperature of the heater temperature sensor so that the detected temperature of the substrate temperature sensor follows a target value that decreases at a prescribed temperature decrease rate.

9. The substrate processing apparatus according to claim 5, wherein The first furnace body and the second furnace body each have: A heating element provided inside the furnace body; A heater temperature sensor that detects a temperature corresponding to the temperature of the furnace body or the heating element; and A substrate temperature sensor that detects a temperature corresponding to the temperature of the substrate, The controller is configured to be able to control the calorific value of the heating element while referring to the detected temperature of the heater temperature sensor so that the detected temperature of the substrate temperature sensor follows a target value, and, when cooling the first furnace body and the second furnace body, adjust the opening degree while referring to the detected temperature of the heater temperature sensor so that the detected temperature of the substrate temperature sensor follows a target value that decreases at a prescribed temperature decrease rate.

10. The substrate processing apparatus according to claim 6, wherein The first furnace body and the second furnace body each have: A heating element provided inside the furnace body; A heater temperature sensor that detects a temperature corresponding to the temperature of the furnace body or the heating element; and A substrate temperature sensor that detects a temperature corresponding to the temperature of the substrate, The controller is configured to be able to control the calorific value of the heating element while referring to the detected temperature of the heater temperature sensor so that the detected temperature of the substrate temperature sensor follows a target value, and, when cooling the first furnace body and the second furnace body, adjust the opening degree while referring to the detected temperature of the heater temperature sensor so that the detected temperature of the substrate temperature sensor follows a target value that decreases at a prescribed temperature decrease rate.

11. The substrate processing apparatus according to any one of claims 1 to 4, wherein It further includes a three-way valve that connects the first flow path and the second flow path on the downstream side of the first air damper and the second air damper so as to be selectively communicable with the heat exchanger. The exhaust blower and the heat exchanger are jointly used for cooling the first furnace body and the second furnace body.

12. The substrate processing apparatus according to any one of claims 2 to 4, wherein It further includes: a first transfer chamber that temporarily accommodates substrates carried in and out of the inside and outside of the first furnace body; and a second transfer chamber that temporarily accommodates substrates carried in and out of the inside and outside of the second furnace body.

13. The substrate processing apparatus according to any one of claims 1, 3 or 4, wherein The first flow path and the first air damper, and the second flow path and the second air damper are arranged symmetrically left and right.

14. The substrate processing apparatus according to any one of claims 1, 2, or 4, wherein The heat exchanger and the exhaust blower are disposed at substantially the same height behind the first furnace body and the second furnace body.

15. A method for manufacturing a semiconductor device, comprising the following steps: Control the heating of a first furnace body and a second furnace body that respectively accommodate and process a substrate, and process the substrate in the first furnace body and the second furnace body, wherein, A first transfer chamber for temporarily accommodating substrates to be transferred in and out of the first furnace body, and a second transfer chamber for temporarily accommodating substrates to be transferred in and out of the second furnace body are provided. The structure inside the first furnace body and the structure inside the first transfer chamber, and the structure inside the second furnace body and the structure inside the second transfer chamber are arranged symmetrically left and right with the adjacent surface between the first transfer chamber and the second transfer chamber as the symmetry plane; and The first furnace body, the heat exchanger, the exhaust blower, and the first air damper provided on the upstream side of the heat exchanger are connected via a first flow path in such a manner that a refrigerant can flow through. The second furnace body, the heat exchanger, the exhaust blower, and the second air damper provided on the upstream side of the heat exchanger are connected via a second flow path in such a manner that a refrigerant can flow through. The first flow path and the second flow path merge at a position downstream of the first air damper and the second air damper and upstream of the heat exchanger. At least one of the heat exchanger and the exhaust blower is commonly used for the first furnace body and the second furnace body in the merging section. The opening degree of at least one of the first air damper and the second air damper is variable. In this state, the opening degrees of the first opening / closing damper and the second opening / closing damper respectively provided near the refrigerant supply port or the refrigerant discharge port of the first furnace body and the second furnace body, and the opening and closing of at least one of the first air damper and the second air damper are controlled according to the determined temperature control mode, so that the refrigerant passes through, the heat exchanger cools the refrigerant, and the exhaust blower sucks the refrigerant and sends it to the downstream side.

16. A method for manufacturing a semiconductor device, comprising the following steps: Controlling the heating of the first furnace body and the second furnace body that respectively accommodate reaction tubes for processing substrates to process the substrates in the first furnace body and the second furnace body; and The first furnace body, the heat exchanger, the exhaust blower, and the first damper provided on the upstream side of the heat exchanger are connected via a first flow path in such a manner that the refrigerant can flow therethrough. The second furnace body, the heat exchanger, the exhaust blower, and the second damper provided on the upstream side of the heat exchanger are connected via a second flow path in such a manner that the refrigerant can flow therethrough. The first flow path and the second flow path merge at a position downstream of the first damper and the second damper and upstream of the heat exchanger. At least one of the heat exchanger and the exhaust blower is commonly used for the first furnace body and the second furnace body in the merging section. The first flow path and the first damper, and the second flow path and the second damper are arranged symmetrically left and right, and the opening degree of at least one of the first damper and the second damper is variable. In this state, according to the determined temperature control mode, the opening degrees of the first opening / closing damper and the second opening / closing damper provided near the refrigerant supply port or the refrigerant discharge port of the first furnace body and the second furnace body, and the opening and closing of at least one of the first damper and the second damper are controlled, so that the refrigerant passes through, the heat exchanger cools the refrigerant, and the exhaust blower sucks the refrigerant and sends it to the downstream side.

17. A method for manufacturing a semiconductor device, comprising the following steps: Controlling the heating of a first furnace body and a second furnace body that respectively accommodate a processing substrate to process the substrate in the first furnace body and the second furnace body; and The first furnace body, the heat exchanger, the exhaust blower, and the first damper provided on the upstream side of the heat exchanger are connected via a first flow path in such a manner that the refrigerant can flow therethrough. The second furnace body, the heat exchanger, the exhaust blower, and the second damper provided on the upstream side of the heat exchanger are connected via a second flow path in such a manner that the refrigerant can flow therethrough. The first flow path and the second flow path merge at a position downstream of the first damper and the second damper and upstream of the heat exchanger. At least one of the heat exchanger and the exhaust blower is commonly used for the first furnace body and the second furnace body in the merging section. The heat exchanger and the exhaust blower are provided at substantially the same height behind the first furnace body and the second furnace body, and the opening degree of at least one of the first damper and the second damper is variable. In this state, according to the determined temperature control mode, the opening degrees of the first opening / closing damper and the second opening / closing damper provided near the refrigerant supply port or the refrigerant discharge port of the first furnace body and the second furnace body, and the opening and closing of at least one of the first damper and the second damper are controlled, so that the refrigerant passes through, the heat exchanger cools the refrigerant, and the exhaust blower sucks the refrigerant and sends it to the downstream side.

18. A method for manufacturing a semiconductor device, comprising the following steps: Controlling the heating of a first furnace body and a second furnace body that respectively accommodate a processing substrate to process the substrate in the first furnace body and the second furnace body; The first furnace body, the heat exchanger, the exhaust blower, and the first air damper provided on the upstream side of the heat exchanger are connected via a first flow path in such a manner that refrigerant can flow therethrough. The second furnace body, the heat exchanger, the exhaust blower, and the second air damper provided on the upstream side of the heat exchanger are connected via a second flow path in such a manner that refrigerant can flow therethrough. The first flow path and the second flow path merge at a position downstream of the first air damper and the second air damper and upstream of the heat exchanger. At least one of the heat exchanger and the exhaust blower is commonly used for the first furnace body and the second furnace body in the merging section. The opening degree of at least one of the first air damper and the second air damper is made variable. In this state, the opening degrees of the first opening / closing damper and the second opening / closing damper provided near the refrigerant supply port or the refrigerant discharge port of the first furnace body and the second furnace body, respectively, and the opening and closing of at least one of the first air damper and the second air damper are controlled according to the determined temperature control mode, so that the refrigerant passes through, the heat exchanger cools the refrigerant, and the exhaust blower sucks the refrigerant and sends it to the downstream side; and Predict the timing to open the first air damper and the second air damper next, and adjust the start time of the processes performed in the first furnace body and the second furnace body so that there is a time difference regardless of whether the opening periods of the first air damper and the second air damper overlap or not: the temperature of the first furnace body or the second furnace body having the first air damper or the second air damper that opens first is cooled to a specified temperature or lower at the opening time point of the second air damper or the first air damper that opens later.

19. A computer-readable storage medium storing a program that causes a computer included in a substrate processing apparatus to execute the following steps: Controlling the heating of a first furnace body and a second furnace body that respectively accommodate and process a substrate in reaction tubes, and processing the substrate in the first furnace body and the second furnace body, wherein, It includes a first transfer chamber that temporarily accommodates substrates carried in and out between the inside and outside of the first furnace body, and a second transfer chamber that temporarily accommodates substrates carried in and out between the inside and outside of the second furnace body. The structure inside the first furnace body and the structure inside the first transfer chamber, and the structure inside the second furnace body and the structure inside the second transfer chamber are arranged symmetrically left and right with the adjacent surface between the first transfer chamber and the second transfer chamber as the symmetry plane; and The first furnace body, the heat exchanger, the exhaust blower, and the first air damper provided on the upstream side of the heat exchanger are connected via a first flow path in such a manner that refrigerant can flow therethrough. The second furnace body, the heat exchanger, the exhaust blower, and the second air damper provided on the upstream side of the heat exchanger are connected via a second flow path in such a manner that refrigerant can flow therethrough. The first flow path and the second flow path merge at a position downstream of the first air damper and the second air damper and upstream of the heat exchanger. At least one of the heat exchanger and the exhaust blower is commonly used for the first furnace body and the second furnace body in the merging section. The opening degree of at least one of the first air damper and the second air damper is variable. In this state, according to the determined temperature control mode, the opening degrees of the first opening / closing damper and the second opening / closing damper provided near the refrigerant supply port or the refrigerant discharge port of the first furnace body and the second furnace body, and the opening and closing of at least one of the first air damper and the second air damper are controlled, so that the refrigerant passes through, the heat exchanger cools the refrigerant, and the exhaust blower sucks the refrigerant and sends it to the downstream side.

20. A computer-readable storage medium storing a computer program, which, when executed by a substrate processing apparatus, causes a computer to perform the following steps: Controlling the heating of a first furnace body and a second furnace body that respectively house reaction tubes for processing substrates, and processing the substrates in the first furnace body and the second furnace body; and The first furnace body, the heat exchanger, the exhaust blower, and the first air damper provided on the upstream side of the heat exchanger are connected via a first flow path in such a manner that refrigerant can flow therethrough. The second furnace body, the heat exchanger, the exhaust blower, and the second air damper provided on the upstream side of the heat exchanger are connected via a second flow path in such a manner that refrigerant can flow therethrough. The first flow path and the second flow path merge at a position downstream of the first air damper and the second air damper and upstream of the heat exchanger. At least one of the heat exchanger and the exhaust blower is commonly used for the first furnace body and the second furnace body in the merging section. The first flow path and the first air damper, and the second flow path and the second air damper are arranged symmetrically left and right. The opening degree of at least one of the first air damper and the second air damper is variable. In this state, according to the determined temperature control mode, the opening degrees of the first opening / closing damper and the second opening / closing damper provided near the refrigerant supply port or the refrigerant discharge port of the first furnace body and the second furnace body, and the opening and closing of at least one of the first air damper and the second air damper are controlled, so that the refrigerant passes through, the heat exchanger cools the refrigerant, and the exhaust blower sucks the refrigerant and sends it to the downstream side.

21. A computer-readable storage medium storing a computer program, which, when executed by a substrate processing apparatus, causes a computer to perform the following steps: Controlling the heating of a first furnace body and a second furnace body that respectively house reaction tubes for processing substrates, and processing the substrates in the first furnace body and the second furnace body; and The first furnace body, the heat exchanger, the exhaust blower, and the first air damper provided on the upstream side of the heat exchanger are connected via a first flow path in such a manner that refrigerant can flow therethrough. The second furnace body, the heat exchanger, the exhaust blower, and the second air damper provided on the upstream side of the heat exchanger are connected via a second flow path in such a manner that refrigerant can flow therethrough. The first flow path and the second flow path merge at a position downstream of the first air damper and the second air damper and upstream of the heat exchanger. At least one of the heat exchanger and the exhaust blower is commonly used for the first furnace body and the second furnace body in the merging section. The heat exchanger and the exhaust blower are provided at substantially the same height toward the rear of the first furnace body and the second furnace body. The opening degree of at least one of the first air damper and the second air damper is made variable. In this state, according to the determined temperature control mode, the opening degrees of the first on-off damper and the second on-off damper provided near the refrigerant supply port or the refrigerant discharge port of the first furnace body and the second furnace body, and the opening and closing of at least one of the first air damper and the second air damper are controlled, so that the refrigerant passes through, the heat exchanger cools the refrigerant, and the exhaust blower sucks the refrigerant and sends it to the downstream side.

22. A computer-readable storage medium storing a computer program, which, when executed by a substrate processing apparatus, causes a computer to perform the following steps: Controlling the heating of a first furnace body and a second furnace body that respectively house reaction tubes for processing substrates to process the substrates in the first furnace body and the second furnace body; The first furnace body, the heat exchanger, the exhaust blower, and the first air damper provided on the upstream side of the heat exchanger are connected via a first flow path in such a manner that refrigerant can flow therethrough. The second furnace body, the heat exchanger, the exhaust blower, and the second air damper provided on the upstream side of the heat exchanger are connected via a second flow path in such a manner that refrigerant can flow therethrough. The first flow path and the second flow path merge at a position downstream of the first air damper and the second air damper and upstream of the heat exchanger. At least one of the heat exchanger and the exhaust blower is commonly used for the first furnace body and the second furnace body in the merging section. The opening degree of at least one of the first air damper and the second air damper is made variable. In this state, according to the determined temperature control mode, the opening degrees of the first on-off damper and the second on-off damper provided near the refrigerant supply port or the refrigerant discharge port of the first furnace body and the second furnace body, and the opening and closing of at least one of the first air damper and the second air damper are controlled, so that the refrigerant passes through, the heat exchanger cools the refrigerant, and the exhaust blower sucks the refrigerant and sends it to the downstream side; and Predict the timing for opening the first damper and the second damper next, and adjust the start time of the processes carried out in the first furnace body and the second furnace body so that regardless of whether the periods during which the first damper and the second damper are open do not overlap or overlap, there is the following time difference: the temperature of the first furnace body or the second furnace body having the first damper or the second damper that is opened first is cooled below a specified value at the opening time point of the later-opened first damper or second damper.

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