Semiconductor component, plasma reaction device and coating forming method

Abstract

The present invention relates to the field of semiconductor processing technology, and specifically discloses a semiconductor component, including a component body, the surface of the component body having a plasma-resistant coating, the plasma-resistant coating including one or more of oxides, oxyfluorides or fluorides of at least two rare earth metal elements, wherein one of the rare earth elements is cerium, and the cerium element makes the oxygen vacancies more active, and the more active oxygen vacancies can decompose fluorocarbon polymers in a plasma environment. Since the cerium element has the property of adjustable chemical valence, and has the characteristics of easy release of lattice oxygen and recovery of lattice oxygen in the working environment of a plasma reaction device, the fluorocarbon polymer can be decomposed into gas during the etching process, and the fluoride generated under the action of plasma can be reduced to oxide, thereby preventing the fluorocarbon polymer and fluoride from falling off in the form of particles, and avoiding environmental pollution in the reaction chamber.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a semiconductor component, a plasma reaction device and a coating forming method. Background Art

[0002] In a typical plasma etching process, process gases (such as CF4, O2, etc.) form plasma under the action of radio frequency (RF) excitation. After passing through the electric field (capacitive coupling or inductive coupling) between the upper electrode and the lower electrode, these plasmas physically bombard and chemically react with the wafer surface, thereby etching the wafer into a specific structure and completing the etching process.

[0003] In the prior art, semiconductor components in plasma reaction devices are exposed to the plasma environment, so they need to be coated on their surfaces to resist plasma corrosion. The corrosive gases in plasma reaction devices are mostly fluorocarbons, which are easily coupled on the coating under the action of plasma to produce fluorocarbon polymers that are easy to fall off, causing particle pollution to the environment in the reaction chamber. Summary of the invention

[0004] The object of the present invention is to provide a semiconductor component to solve the particle contamination problem of a reaction chamber in a plasma reaction device.

[0005] In order to achieve the above-mentioned purpose, the technical solution provided by the present invention is: a semiconductor component, including a component body, the surface of the component body has a plasma-resistant coating, the plasma-resistant coating includes one or more of oxides, oxyfluorides or fluorides of at least two rare earth metal elements, one of which is cerium, and the cerium element makes the oxygen vacancies more active. The more active oxygen vacancies can decompose carbon fluoropolymers in the plasma environment to form gaseous small molecules.

[0006] The surface of the above-mentioned semiconductor components has a plasma-resistant coating, which contains a compound of cerium. Cerium has the characteristics of adjustable chemical valence and easy release and recovery of lattice oxygen. During the etching process, the fluorocarbon polymer can be decomposed into gas and discharged from the reaction chamber, and the fluoride can be reduced to oxide, thereby preventing the fluorocarbon polymer and fluoride particles from falling off and avoiding environmental pollution in the reaction chamber.

[0007] Optionally, the rare earth elements in the plasma resistant coating in addition to cerium also include: one or more of lutetium, zirconium or erbium. These rare earth elements are relatively easy to form solid solutions, which means that the solute atoms are dissolved in the solvent lattice while still maintaining the alloy phase of the solvent type, with a cubic lattice and a dense structure.

[0008] Optionally, the plasma resistant coating is one or more of cerium-lutetium solid solution, cerium-zirconium solid solution, cerium-lutetium-zirconium solid solution, which are solid solutions of two rare earth elements, lutetium and zirconium, and these solid solutions have a dense structure in microstructure.

[0009] Optionally, the chemical formula of the cerium-lutetium solid solution is Lu a Ce b O 1.5, wherein 0.4 <a<1,a+b=1。

[0010] Optionally, the chemical formula of the cerium-zirconium solid solution is Zr a Ce b O 2, wherein 0.4 <a<1,a+b=1。

[0011] Optionally, the chemical formula of the cerium-lutetium-zirconium solid solution is Lu a Ce b Zr c O 1.5, wherein 0.4 <a<1,a+b+c=1。

[0012] The solid solution in the above selected ratio range is chemically stable.

[0013] Accordingly, the present invention also provides a method for forming a plasma resistant coating, comprising:

[0014] Provide the parts body;

[0015] The plasma resistant coating is formed on the surface of the component body.

[0016] Optionally, the process for forming the plasma resistant coating includes one or more of physical vapor deposition, chemical vapor deposition, metal organic compound vapor deposition or atomic layer deposition.

[0017] The plasma-resistant coating formed by the above method has a dense structure and can resist the corrosion of plasma.

[0018] Accordingly, the present invention also provides a plasma reaction device, comprising:

[0019] A reaction chamber, wherein the reaction chamber is a plasma environment;

[0020] And the semiconductor component mentioned above, wherein the semiconductor component is exposed to the plasma environment.

[0021] Optionally, the plasma reaction device is an inductively coupled plasma reaction device, and the semiconductor components include: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring, or a plasma confinement device. These semiconductor components are arranged in a reaction chamber and exposed to a plasma environment.

[0022] Optionally, the plasma reaction device is a capacitively coupled plasma reaction device, and the semiconductor components include: at least one of a shower head, a gas distribution plate, an upper grounding ring, a lower grounding ring, a gas pipeline, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring, or a plasma confinement device. These semiconductor components are arranged in a reaction chamber and exposed to a plasma environment.

[0023] The semiconductor components in the above-mentioned plasma reaction device are exposed to the plasma environment. The surface of the semiconductor components is coated with a plasma-resistant coating containing cerium. The cerium in the coating can decompose easily detached products such as fluorides and carbon fluorides to avoid pollution to the environment in the reaction chamber.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] In the semiconductor component provided by the present invention, the surface of the semiconductor component has a plasma-resistant coating containing cerium. Since cerium has the property of adjustable chemical valence, the plasma-resistant coating can generate highly active oxygen vacancies after being bombarded by plasma. The highly active oxygen vacancies can open the carbon-fluorine bonds in the fluorocarbon polymer to form gaseous small molecules, and the gaseous small molecules can be pumped out of the reaction chamber by a pump. Therefore, the fluorocarbon polymer can be prevented from falling off in the form of particles after accumulation, avoiding particle contamination in the reaction chamber. At the same time, the oxygen vacancies can absorb oxygen in the plasma environment again to restore to the initial state. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0027] Figure 1 is a schematic diagram of a plasma reaction device according to an embodiment of the present invention;

[0028] Figure 2 It is a schematic diagram of the structure of a semiconductor component according to an embodiment of the present invention;

[0029] Figure 3 Schematic diagram of the anti-corrosion principle of the plasma-resistant coating according to an embodiment of the present invention;

[0030] Figure 4 is a flow chart of a method for forming a plasma resistant coating according to an embodiment of the present invention;

[0031] Figure 5 It is a schematic diagram of preparing a plasma-resistant coating by a PVD method according to an embodiment of the present invention.

[0032] Reference numerals:

[0033] 100-component body; 200-plasma resistant coating; 300-vacuum chamber; 400-target material;

[0034] 701-bushing; 702-gas nozzle; 703-electrostatic chuck; 704-focusing ring; 705-insulating ring; 706-covering ring; 707-plasma confinement device; 708-ceramic cover plate; 709-reaction chamber; W-wafer. DETAILED DESCRIPTION

[0035] In order to solve the above technical problems, an embodiment of the present invention proposes a semiconductor component, a plasma reaction device including the semiconductor component, and a method for forming a plasma-resistant coating on the surface of the semiconductor component.

[0036] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0037] It should be noted that all directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, etc.) are only used to explain the relative position relationship, movement status, etc. between the components under a certain specific posture (as shown in the accompanying drawings). If the specific posture changes, the directional indication will also change accordingly.

[0038] It should also be noted that when an element is referred to as being "fixed on" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element at the same time. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element at the same time.

[0039] In addition, the descriptions of "first", "second", etc. in the present invention are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0040] Figure 1 It is a structural schematic diagram of a plasma reaction device of the present invention.

[0041] Please refer to Figure 1 The plasma reaction device includes: a reaction chamber 709, the reaction chamber 709 is a plasma environment; the components and the inner wall of the reaction chamber are exposed to the plasma environment.

[0042] The plasma reaction device further includes: a base, the base is used to carry the substrate W to be processed, and the plasma is used to process the substrate W to be processed. Since plasma is highly corrosive, in order to prevent the surface of the parts and the inner wall of the reaction chamber 709 from being corroded by plasma, it is necessary to coat the surface of the parts and the inner wall of the reaction chamber 709 with a plasma-resistant coating.

[0043] In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: a bushing 701, a gas nozzle 702, an electrostatic chuck 703, a focusing ring 704, an insulating ring 705, a covering ring 706, a plasma confinement device 707, a ceramic cover plate 708 or a gas connection flange (not shown).

[0044] In other embodiments, the plasma reaction device is a capacitively coupled plasma reaction device, and accordingly, the components exposed to the plasma environment include: a shower head, a gas distribution plate, an upper grounding ring, a lower grounding ring, a gas pipeline, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring or at least one of a plasma confinement device.

[0045] Although the corrosive gases in the reaction chamber 709 are mostly fluorocarbon compounds, which are easily coupled on the coating under the action of plasma to produce fluorocarbon polymers that are easy to fall off, causing pollution to the environment in the reaction chamber, the surface of the semiconductor parts in the plasma reaction device of this embodiment has a plasma-resistant coating. The cerium element in the plasma-resistant coating has the property of adjustable chemical valence. After being bombarded by plasma, the plasma-resistant coating produces highly active oxygen vacancies. The highly active oxygen vacancies can open the carbon-fluorine bonds in the fluorocarbon polymer to form gaseous small molecules. Therefore, it can prevent the fluorocarbon polymer from accumulating and falling off in the form of particles, avoiding environmental pollution in the reaction chamber. At the same time, the oxygen vacancies can reabsorb the oxygen in the plasma environment to restore to the initial state, thereby ensuring the stability of the coating itself.

[0046] The following is a detailed description of semiconductor components:

[0047] Figure 2 A schematic diagram of an embodiment of a semiconductor component provided by the present invention.

[0048] Please refer to Figure 2 , this embodiment specifically includes a component body 100, and the surface of the component body 100 has a plasma-resistant coating 200. The plasma-resistant coating 200 includes one or more of oxides, oxyfluorides, or fluorides of at least two rare earth metal elements. One of the rare earth elements is cerium, and cerium makes the activity of oxygen vacancies relatively high. The oxygen vacancies with relatively high activity can decompose the carbon-fluorine polymers in the plasma environment. The plasma-resistant coating 200 in this embodiment contains cerium. Due to the characteristics of cerium having adjustable chemical valence states and being easy to release and recover lattice oxygen, it can prevent the shedding of carbon-fluorine polymers and fluoride particles, thereby avoiding environmental pollution in the reaction chamber and ensuring the stability of the coating itself.

[0049] In this embodiment, the plasma-resistant coating 200 is specifically selected as cerium oxide. In other embodiments, one or more of cerium oxide, cerium fluoride, or cerium oxyfluoride can also be selected. The excitation temperature of the lattice oxygen activity of cerium is 100°C - 200°C, which is suitable for the operating temperature of the plasma reaction device.

[0050] In this embodiment, the rare earth element also includes lutetium. Specifically, the coating in this embodiment is a cerium-lutetium solid solution, and the chemical formula of the cerium-lutetium solid solution is Lu a Ce b O 1.5, where 0.4 < a < 1 and a + b = 1.

[0051] In other embodiments, the rare earth element also includes zirconium. Specifically, the coating is a cerium-zirconium solid solution, and the chemical formula of the cerium-zirconium solid solution is Zr a Ce b O 2, where 0.4 < a < 1 and a + b = 1.

[0052] In other embodiments, the rare earth element also includes lutetium and zirconium. Specifically, the coating is a cerium-lutetium-zirconium solid solution, and the chemical formula of the cerium-lutetium-zirconium solid solution is Lu a Ce b Zr c O 1.5, where 0.4 < a < 1 and a + b + c = 1.

[0053] In other embodiments, the rare earth element also includes one or more of lutetium, zirconium, or erbium.

[0054] In other embodiments, the coating is one or more of a cerium-lutetium solid solution, a cerium-zirconium solid solution, and a cerium-lutetium-zirconium solid solution. The chemical formula of the cerium-lutetium solid solution is Lu a Ce b O 1.5, where 0.4 < a < 1 and a + b = 1; the chemical formula of the cerium-zirconium solid solution is Zr a Ce b O 2, where 0.4 < a < 1 and a + b = 1; the chemical formula of the cerium-lutetium-zirconium solid solution is Lu a Ce b Zr c O 1.5, where 0.4 < a < 1 and a + b + c = 1.

[0055] The three rare earth elements selected in the above embodiment are relatively easy to form a solid solution. A solid solution refers to an alloy phase in which the solute atoms are dissolved in the solvent lattice while still maintaining the solvent type. It has a cubic lattice, can form lattice oxygen, has a dense structure, and can resist corrosion from corrosive gases.

[0056] In addition, the solid solution in the interval ratio selected by the chemical formula in the above embodiment is chemically stable.

[0057] The embodiments provided by the present invention keep the physical and chemical properties of the coating unchanged before and after the plasma in a manner similar to "catalysis". Figure 3 As shown, taking cerium-lutetium solid solution as a coating, its structural chemical formula is Ce0.5Lu 0.5O 1.5. In the figure, process a indicates that the coating still produces highly active oxygen vacancies after being bombarded by plasma. The highly active lattice oxygen released in process b activates and punches the CF bond, and then gradually degrades CF, that is, the carbon fluoropolymer produced in the reaction process is decomposed into CO 2 and CD 2O (carbonyl fluoride) gas, and discharged from the reaction chamber. In process c, the lattice defects can adsorb O 2 in the reaction chamber again and activate and dissociate it, fill the lattice defects and return to the state of process a, so that the cerium fluoride generated by the coating reaction is reduced to cerium oxide or cerium fluoride. According to the principle that the binding force between cerium and oxygen is stronger than that between cerium and fluorine, cerium fluoride is reduced to cerium oxide or cerium fluoride. Among them, the source of O 2 includes two ways, one is O 2 introduced when the plasma reaction device is working, and the other is O element provided by water vapor introduced when the plasma reaction device is in a cleaning state.

[0058] The "catalytic" principle of the above coating is to reduce or decompose the intermediate products (such as fluorides and fluorocarbon polymers) generated during the working process, thereby reducing the risk of accumulation and shedding of the intermediate products, thereby avoiding pollution of the environment in the reaction chamber.

[0059] The preparation process of the plasma resistant coating 200 includes one or more of physical vapor deposition, chemical vapor deposition, metal organic compound vapor deposition or atomic layer deposition.

[0060] Figure 4 The present invention is a flow chart of preparing a plasma resistant coating by physical vapor deposition (PVD) according to an embodiment of the present invention.

[0061] Please refer to Figure 4 , taking the preparation of cerium-lutetium solid solution coating as an example, comprising:

[0062] 10. Provide the parts body

[0063] like Figure 5 As shown, the component body 100 is placed in a vacuum chamber 300;

[0064] 20. Provide target material and evaporate

[0065] One or more of cerium oxide, oxyfluoride, and fluoride are selected as the target material 400 for evaporation, and one or more of lutetium oxide, oxyfluoride, and fluoride are selected as the target material 400 for evaporation;

[0066] Alternatively, one or more of oxides, oxyfluorides, and fluorides containing cerium and lutetium are selected as the target material 400 for evaporation;

[0067] 30. Formation of plasma resistant coating

[0068] The molecular flow formed by the evaporation of the target material forms a dense coating on the surface of the component body 100 .

[0069] The plasma-resistant coating formed by the method of the above embodiment has a dense structure and can resist the corrosion of plasma.

[0070] In summary, in the semiconductor parts provided by the embodiments of the present invention, the surface of the semiconductor parts has an anti-corrosion coating containing cerium. Since cerium has the property of adjustable chemical valence, and in the working environment of the plasma reaction device, it has the characteristics of easy release of lattice oxygen and recovery of lattice oxygen, the fluorocarbon polymer can be decomposed into gas during the etching process, and the fluoride generated under the action of plasma can be reduced to oxide, thereby preventing the fluorocarbon polymer and fluoride from falling off in the form of particles, and avoiding environmental pollution in the reaction chamber. An embodiment of a method for forming a plasma corrosion-resistant coating is provided, which is prepared by physical vapor deposition (PVD), and the prepared coating has a dense structure and can resist plasma corrosion. An embodiment of a plasma reaction device is also provided, in which a plasma corrosion-resistant semiconductor part is provided in the plasma reaction device, and the inner surface of the reaction chamber has a plasma corrosion-resistant coating. The coating on the surface of the semiconductor part and the coating on the inner surface of the reaction chamber will not produce particles falling off, avoiding pollution of the working environment in the reaction chamber, thereby improving the yield of the plasma reaction device product preparation, avoiding material waste, and saving costs.

[0071] The above description is only a preferred embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the inventive concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. A semiconductor component, comprising a component body, characterized in that: The surface of the component body has a plasma-resistant coating, and the plasma-resistant coating includes oxides of at least two rare earth metal elements. One of the rare earth elements is cerium. The cerium element in the plasma-resistant coating has the property of adjustable chemical valence state. After the plasma-resistant coating is bombarded by plasma, oxygen vacancies with relatively high activity are generated. The cerium element makes the oxygen vacancies highly active, and the highly active oxygen vacancies can break the carbon-fluorine bonds of the fluorocarbon polymer in the plasma environment to form gaseous small molecules. The plasma-resistant coating is one or more of cerium-lutetium solid solution, cerium-zirconium solid solution, and cerium-lutetium-zirconium solid solution. The chemical formula of the cerium-lutetium solid solution is Lu a Ce b O 1.5 , where 0.4 < a < 1 and a + b = 1. The chemical formula of the cerium-zirconium solid solution is Zr a Ce b O2, where 0.4 < a < 1 and a + b = 1. The chemical formula of the cerium-lutetium-zirconium solid solution is Lu a Ce b Zr c O 1.5 , where 0.4 < a < 1 and a + b + c = 1.

2. A method for forming a semiconductor component as claimed in claim 1, characterized in that: include: Provide the parts body; A plasma resistant coating is formed on the surface of the component body.

3. The method for forming a semiconductor component according to claim 2, wherein: The process for forming the plasma resistant coating includes: one or more of physical vapor deposition, chemical vapor deposition or atomic layer deposition.

4. The method for forming a semiconductor component according to claim 2, wherein: The process for forming the plasma resistant coating includes: a metal organic compound vapor phase deposition method.

5. A plasma reaction device, characterized in that: include: A reaction chamber, wherein the reaction chamber is a plasma environment; And the semiconductor component of claim 1, wherein the semiconductor component is exposed to the plasma environment.

6. The plasma reaction device according to claim 5, characterized in that: The plasma reaction device is an inductively coupled plasma reaction device, and the semiconductor components include: at least one of a ceramic cover plate, a bushing, a gas nozzle, a gas connection flange, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring or a plasma confinement device.

7. The plasma reaction device according to claim 5, characterized in that: The plasma reaction device is a capacitively coupled plasma reaction device, and the semiconductor components include: at least one of a shower head, a gas distribution plate, an upper grounding ring, a lower grounding ring, a gas pipeline, a focusing ring, an insulating ring, an electrostatic chuck, a cover ring or a plasma confinement device.

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