Organic light emitting display device

By forming organic patterns on the sidewalls of the substrate and setting a multilayer thin-film encapsulation structure, the problem of water and moisture penetration caused by the removal of the thin-film encapsulation layer is solved, thus improving the reliability of the organic light-emitting display device.

CN114068647BActive Publication Date: 2025-12-19SAMSUNG DISPLAY CO LTD
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Patent Information

Application Number
CN202110869611.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Priority Date
2020-07-31
Filing Date
2021-07-30
Publication Date
2025-12-19
Estimated Expiration
2041-07-30

AI Technical Summary

Technical Problem

During the manufacturing process of stretchable organic light-emitting display devices, the thin film encapsulation layer is excessively removed from the sidewall of the substrate, leading to water and moisture penetration and affecting the reliability of the device.

Method used

An organic pattern is formed on the sidewall of the substrate, and an inorganic thin film encapsulation layer is disposed around it to form a multilayer thin film encapsulation structure to block the penetration of water and moisture.

Benefits of technology

It effectively blocks the penetration of water and moisture, reduces defects in the device, and improves the reliability of the stretchable organic light-emitting display device.

✦ Generated by Eureka AI based on patent content.

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Abstract

An organic light emitting display device includes a substrate including: a pixel area; a connection area between adjacent ones of the pixel areas, respectively; and an area having a via, the area having the via being defined by the adjacent pixel areas and the connection area between the adjacent pixel areas, respectively; a sub-pixel structure on the substrate at each of the pixel areas; and an organic pattern on a sidewall of the substrate adjacent to the via.
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Description

TECHNICAL FIELD

[0001] Aspects of embodiments of the present disclosure relate generally to an organic light emitting display device and a method of manufacturing an organic light emitting display device. More particularly, aspects of embodiments of the present disclosure relate to an organic light emitting display device including an organic pattern and a method of manufacturing an organic light emitting display device including an organic pattern. BACKGROUND

[0002] Flat panel display devices are used as display devices for replacing cathode ray tube display devices due to light weight and thin characteristics. Some representative examples of such flat panel display devices include liquid crystal display devices and organic light emitting display devices.

[0003] In an organic light emitting display device, after a substrate is formed of a flexible material, a plurality of through holes can be formed in the substrate to manufacture a stretchable substrate. A stretchable organic light emitting display device that can be disposed on a curved surface or an uneven surface without causing a lifting phenomenon by using the stretchable substrate is being developed.

[0004] The above information disclosed in this Background section is for enhancing the understanding of the background of the present disclosure, and therefore, it can include information that does not constitute the prior art. SUMMARY

[0005] In a method of manufacturing a stretchable organic light emitting display device, a thin film encapsulation layer included in the stretchable organic light emitting display device can be excessively torn on a sidewall of a substrate during a process of peeling the substrate from a glass substrate. In this case, a path for blocking water and / or moisture that can penetrate from the outside from penetrating into the substrate can be relatively shortened at the sidewall of the substrate, which can cause the water and / or moisture to penetrate into the substrate. When the water and / or moisture penetrates into the substrate from the outside, defects of the stretchable organic light emitting display device can be caused.

[0006] Some embodiments of the present disclosure are directed to an organic light emitting display device including an organic pattern.

[0007] Some embodiments of the present disclosure are directed to a method of manufacturing an organic light emitting display device including an organic pattern.

[0008] According to some embodiments of the present disclosure, an organic light emitting display device includes a substrate including: a pixel area; connection areas respectively between adjacent ones of the pixel areas; and a through-hole having area defined by the adjacent pixel areas and the connection areas respectively between the adjacent pixel areas; a sub-pixel structure on the substrate at each of the pixel areas; and an organic pattern on a sidewall of the substrate adjacent to the through-hole.

[0009] In some embodiments, in a plan view of the organic light emitting display device, the organic pattern can extend along an outermost periphery of an area defined by adjacent pixel areas and connection areas between the adjacent pixel areas, respectively.

[0010] In some embodiments, the organic light emitting display device can further include a thin film encapsulation structure on the sub-pixel structure, the thin film encapsulation structure including: a first inorganic thin film encapsulation layer on the sub-pixel structure; an organic thin film encapsulation layer on the first inorganic thin film encapsulation layer; and a second inorganic thin film encapsulation layer on the organic thin film encapsulation layer.

[0011] In some embodiments, the organic pattern and the organic thin film encapsulation layer can include the same material as each other.

[0012] In some embodiments, the organic pattern can contact the first inorganic thin film encapsulation layer and the second inorganic thin film encapsulation layer.

[0013] In some embodiments, the first inorganic thin film encapsulation layer can extend in a direction from the sub-pixel structure to the via hole, and between a side wall of the substrate adjacent to the via hole and the organic pattern, and the second inorganic thin film encapsulation layer can extend in the direction and can be on the first inorganic thin film encapsulation layer located on the side wall of the substrate.

[0014] In some embodiments, the second inorganic thin film encapsulation layer can contact the organic pattern on the side wall of the substrate.

[0015] In some embodiments, the first inorganic thin film encapsulation layer can include a protrusion protruding from a portion of the first inorganic thin film encapsulation layer adjacent to a bottom surface of the substrate in a direction from the side wall of the substrate to the via hole.

[0016] In some embodiments, the organic light emitting display device can further include: a gate insulating layer on the substrate; an interlayer insulating layer on the gate insulating layer; and a planarization layer on the interlayer insulating layer. A side wall of each of the gate insulating layer, the interlayer insulating layer, and the planarization layer adjacent to the via hole can contact the first inorganic thin film encapsulation layer.

[0017] In some embodiments, the substrate can have an island shape at each of the pixel areas, and the substrate can have a bar shape at each of the connection areas.

[0018] In some embodiments, the connection area can include: a first connection area extending in a first direction; and a second connection area extending in a second direction orthogonal to the first direction. One side of one of the pixel areas can contact the first connection area, and an adjacent side of the one pixel area can contact the second connection area.

[0019] In some embodiments, the substrate can have an island shape at each of the pixel regions, and the substrate can have a U shape, an S shape, or a W shape at each of the connection regions.

[0020] In some embodiments, the substrate at each of the connection regions can be stretchable.

[0021] In some embodiments, the substrate can include a mesh structure having a plurality of through-holes, and one of the plurality of through-holes can be defined by the substrate at at least three adjacent pixel regions among the pixel regions and at least three connection regions among the connection regions configured to connect the at least three adjacent pixel regions to each other.

[0022] According to some embodiments of the disclosure, a method of manufacturing an organic light emitting display device includes: providing a glass substrate including: pixel regions; connection regions respectively between adjacent pixel regions among the pixel regions; and a contact region surrounded by the adjacent pixel regions and the connection regions respectively between the adjacent pixel regions; forming a contact pattern on the glass substrate at the contact region; forming a preliminary substrate on the glass substrate and the contact pattern; forming a sub-pixel structure on the preliminary substrate at each of the pixel regions; forming an opening exposing a portion of the contact pattern and a portion of the glass substrate by removing a portion of the preliminary substrate overlapping with an outermost portion of the contact region; and after forming the opening, forming a substrate at the pixel regions and the connection regions and forming a dummy pattern on the contact pattern.

[0023] In some embodiments, the method can further include: forming a first inorganic thin film encapsulation layer throughout an entire area of the glass substrate; forming a portion of an organic thin film encapsulation layer in the opening when the organic thin film encapsulation layer is formed on the first inorganic thin film encapsulation layer; and forming a second inorganic thin film encapsulation layer on the first inorganic thin film encapsulation layer and the organic thin film encapsulation layer.

[0024] In some embodiments, the portion of the organic thin film encapsulation layer in the opening can be defined as an organic pattern, and the organic pattern can be surrounded by the first inorganic thin film encapsulation layer and the second inorganic thin film encapsulation layer.

[0025] In some embodiments, the method can further include: peeling the substrate from the glass substrate when the dummy pattern formed on the contact pattern is fixed to the glass substrate.

[0026] In some embodiments, after the substrate is peeled from the glass substrate, a through-hole can be defined that is surrounded by the substrate at the adjacent pixel regions and the connection regions respectively between the adjacent pixel regions.

[0027] In some embodiments, the contact pattern can include a protrusion protruding from a top surface of the contact pattern at an outermost portion of the contact pattern in a direction from the glass substrate to the sub-pixel structure, and the protrusion can be exposed by the opening.

[0028] According to one or more embodiments of the disclosure, an organic light emitting display device can include a first inorganic thin film encapsulation layer and a second inorganic thin film encapsulation layer. The first inorganic thin film encapsulation layer and the second inorganic thin film encapsulation layer can cover (e.g., can completely cover) a sidewall of each of a substrate, a buffer layer, a gate insulating layer, an interlayer insulating layer, and a planarization layer, so that water and / or moisture that can penetrate into the sidewall from the outside through a via hole can be blocked or substantially blocked (e.g., can be completely blocked).

[0029] According to one or more embodiments of the disclosure, because an organic pattern can be disposed on a sidewall of a substrate adjacent to a via hole, a path for blocking penetration of water and / or moisture can be relatively increased at the sidewall of the substrate.

[0030] According to one or more embodiments of the disclosure, in a method of manufacturing an organic light emitting display device, because an organic pattern and a protrusion of a contact pattern can be formed at a portion where an opening of a glass substrate is located, a thickness of a second inorganic thin film encapsulation layer can not be reduced (e.g., can not become thinner) within the opening, and the second inorganic thin film encapsulation layer can not be excessively torn in a process of peeling the substrate from the glass substrate. Accordingly, defects of the organic light emitting display device can be reduced.

[0031] According to one or more embodiments of the disclosure, because a protrusion of a contact pattern can be formed in an opening, an area in which a first inorganic thin film encapsulation layer contacts a glass substrate can be relatively reduced, and the first inorganic thin film encapsulation layer can be easily peeled from the glass substrate in a peeling process. BRIEF DESCRIPTION OF DRAWINGS

[0032] The above and other aspects and features of the disclosure will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0033] Figure 1 is a plan view illustrating an organic light emitting display device according to one or more embodiments of the disclosure;

[0034] Figures 2 to 4 is a plan view illustrating an example of a substrate included in the organic light emitting display device of Figure 1

[0035] Figure 5 is a cross-sectional view taken along line I-I' of the organic light emitting display device of Figure 1

[0036] ​​Figure 6 is a cross-sectional view taken along Figure 1 line II-II' of the organic light emitting display device of FIG. 1; and

[0037] Figures 7 to 22 is a view illustrating a method of manufacturing an organic light emitting display device according to one or more embodiments of the present disclosure. DETAILED DESCRIPTION

[0038] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. In the whole document, the same drawing reference numerals are used for the same elements throughout the drawings. The present disclosure may, however, be embodied in various different forms, and should not be construed as being limited to only the embodiments set forth herein. Rather, these embodiments are provided as examples so that the present disclosure will be thorough and complete, and will fully convey the scope of the aspects and features of the present disclosure to those skilled in the art. Therefore, processes, elements and techniques that are not necessary to fully understand the aspects and features of the present disclosure can not be described, for the full understanding of the aspects and features of the present disclosure by those of ordinary skill in the art. Unless otherwise defined, the same drawing reference numerals are used throughout the drawings and written description and therefore, their descriptions will not be repeated.

[0039] In the drawings, the relative sizes and the relative dimensions of elements, layers, and regions can be exaggerated and / or simplified for clarity. Spatial relative terms, such as "below", "lower", "bottom", "under", "above", and "upper" can be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. It will be understood that the spatial relative terms are intended to encompass different orientations of the device in use or in operation, in addition to the orientations depicted in the figures. For example, if a device in the figures is turned over, elements described as "below" or "under" other elements or features would then be oriented "above" the other elements or features. Thus, the example terms "below" and "under" can encompass both an orientation of above and below. The device can be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0040] It will be understood that, although the terms "first", "second", "third", and the like can be used herein to describe various elements, components, regions, layers and / or sections, these elements, components, regions, layers and / or sections should not be limited by these terms. These terms are used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section described below could be termed a second element, component, region, layer or section without departing from the spirit and scope of the present disclosure.

[0041] It will be understood that when an element or layer is referred to as being "on" or "connected to" or "coupled to" another element or layer, it can be directly on, connected or coupled to the other element or layer, or one or more intervening elements or layers can also be present. In addition, it will also be understood that when an element or layer is referred to as being between two elements or layers, it can be the only element or layer between the two elements or layers, or one or more intervening elements or layers can also be present.

[0042] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises", "comprising", "includes" and / or "including" when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items. Expressions such as "at least one of," when preceding the list of two or more items, modify the entire list of items and do not modify the list of items individually.

[0043] As used herein, the terms "substantially," "approximately," and similar terms are used as terms of approximation and not as terms of degree, and are intended to account for the inherent deviations in measured or calculated values that would be recognized by those of ordinary skill in the art. Further, the use of "may" when describing embodiments of the disclosure indicates that one or more embodiments of the disclosure. As used herein, the terms "use," "using," and "used" can be considered synonymous with the terms "utilize," "utilizing," and "utilized," respectively.

[0044] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure and will not be interpreted in an overly idealized or formal sense unless expressly so defined herein.

[0045] Figure 1 FIG. 1 is a plan view illustrating an organic light emitting display apparatus according to one or more embodiments of the disclosure, and Figures 2 to 4 FIG. 2 is a plan view illustrating Figure 1 FIG. 3 is a plan view illustrating an example of a substrate included in the organic light emitting display apparatus of

[0046] Referring to Figure 1 andFigure 2 The organic light-emitting display device 100 may include a substrate 110.

[0047] The substrate 110 may include pixel regions 10 and connection regions 30. In this case, one of the pixel regions 10 may include a first sub-pixel region 11, a second sub-pixel region 12, and a third sub-pixel region 13. In other words, each of the pixel regions 10 may include the first to third sub-pixel regions 11, 12, and 13.

[0048] like Figure 22 As shown, pixel regions 10 can be disposed on a first direction D1 that is parallel or substantially parallel to the top surface of the organic light-emitting display device 100 and on a second direction D2 that intersects (e.g., orthogonal or substantially orthogonal) the first direction D1. Pixel regions 10 can be spaced apart from each other, and connecting regions 30 can be respectively located between adjacent pixel regions 10. In other words, a connecting region 30 can be located between two adjacent pixel regions 10.

[0049] In one or more embodiments, vias 205 may be formed in the substrate 110. For example, one of the vias 205 may be formed in a region defined by adjacent pixel regions 10 within pixel regions 10 and connection regions 30 located between the adjacent pixel regions 10. In other words, one of the vias 205 may be surrounded (e.g., around its periphery) by at least three adjacent pixel regions 10 within pixel regions 10 and at least three connection regions 30 configured to connect the at least three adjacent pixel regions 10 to each other.

[0050] Return to reference Figure 1 For ease of description, the substrate 110 located at each (e.g., center or top) of the pixel region 10 is defined as the display portion 520, and the substrate 110 located at each (e.g., center or top) of the connection region 30 is defined as the connection portion 120. In other words, the substrate 110 may include the display portion 520 and the connection portion 120.

[0051] In a plan view of the organic light-emitting display device 100 (e.g., viewed from a direction perpendicular or substantially perpendicular to the top surface of the associated element or layer), each of the display portions 520 may be island-shaped, and each of the connecting portions 120 may be strip-shaped. Furthermore, the substrate 110, including the display portions 520 and the connecting portions 120, may have a mesh structure defined by through-holes 205. For example, the through-holes 205 may be defined by four adjacent display portions 520 and four adjacent connecting portions 120.

[0052] The first to third sub-pixels (see, for example, Figure 5 and Figure 6 The sub-pixel structure 200 of FIG. 1 can be arranged at (for example, in or on) the display portion 520 at (for example, in or on) the first to third sub-pixel regions 11, 12, and 13, respectively. For example, the first sub-pixel can emit red light, the second sub-pixel can emit green light, and the third sub-pixel can emit blue light. The organic light emitting display device 100 can display an image by the first to third sub-pixels in a third direction (for example, a thickness direction) D3 perpendicular or substantially perpendicular to the first and second directions D1 and D2.

[0053] Although one pixel region 10 has been described as including three sub-pixel regions 11, 12, and 13, the configuration of one pixel region 10 according to one or more embodiments of the present disclosure is not limited thereto. For example, one pixel region 10 can include at least one sub-pixel region. In other words, according to various embodiments, one pixel region 10 can include one or more sub-pixel regions, and thus the present disclosure is not limited to Figure 1 the three sub-pixel regions 11, 12, and 13 shown in FIG. 1.

[0054] Wiring (for example, gate signal wiring, data signal wiring, and / or power voltage wiring, etc.) can be arranged at (for example, in or on) the connection portion 120. An image signal and a power voltage can be provided to the first to third sub-pixels through the wiring.

[0055] Although the display portion 520 is shown as having a rectangular shape in a plan view in Figure 1 FIG. 1, the configuration of the display portion 520 according to one or more embodiments of the present disclosure is not limited thereto. For example, each of the display portion 520 and the connection portion 120 can have a triangular shape, a diamond shape, a polygonal shape, a circular shape, a track shape, or an elliptical shape in a plan view.

[0056] In one or more embodiments, when the display portion 520 has a rectangular shape in a plan view, each of the connection portions 120 can include a first connection portion 121 (e.g., a first connection area) extending in a first direction D1 and a second connection portion 122 (e.g., a second connection area) extending in a second direction D2. The first connection portion 121 can be disposed in the first direction D1 (e.g., a column direction), and the second connection portion 122 can be disposed in the second direction D2 (e.g., a row direction). For example, one side of the display portion 520 (e.g., a side surface of the display portion 520 parallel or substantially parallel to the second direction D2) can contact (e.g., can be in contact with) the first connection portion 121, and an adjacent side of the display portion 520 (e.g., a side surface of the display portion 520 parallel or substantially parallel to the first direction D1) can contact (e.g., can be in contact with) the second connection portion 122.

[0057] The connection portions 120 can be stretchable. For example, when the display portion 520 is irregularly disposed, the shape of the connection portions 120 can change so that the irregular disposition of the display portion 520 can be maintained or substantially maintained. For example, the connection portions 120 can stretch, contract, bend, and / or fold. In this case, the shape of the through-holes 205 can also change.

[0058] Referring to Figures 2 to 4 , the connection portions 120 can have various different suitable shapes. For example, as shown in Figure 2 , the connection portion 420 can have a U shape or substantially a U shape. Also, as shown in Figure 3 , the connection portion 421 can have an S shape or substantially an S shape. Further, as shown in Figure 4 , the connection portion 422 can have a W shape or substantially a W shape. In this case, the stretchability of the connection portions 420, 421, and 422 can increase. For example, each of the connection portions 420, 421, and 422 can have a spring shape to stretch relatively more than the connection portions 120 having a bar shape, and the connection portions 420, 421, and 422 can be relatively easily stretched, contracted, bent, and / or folded.

[0059] Although the connection portions 420, 421, and 422 have been described as having a U shape, an S shape, and a W shape, respectively, the configuration of the connection portions 420, 421, and 422 according to one or more embodiments of the present disclosure is not limited thereto. For example, the connection portions 420, 421, and 422 can have various suitable shapes.

[0060] Referring back to Figure 1 , the display portion 520 and the connection portions 120 can be integrally formed. For example, in a preliminary substrate (e.g., a glass substrate), the display portion 520 and the connection portions 120 can be integrally formed.Figure 12 After the pre-substrate 510 is provided, the substrate 110, which is divided into the display portion 520 and the connection portion 120, can be provided by forming through holes 205 in the pre-substrate. In other words, the display portion 520 and the connection portion 120 can be formed simultaneously using the same or substantially the same material.

[0061] The organic light-emitting display device 100 may include a substrate 110 having through holes 205, so as to facilitate easy placement on curved or uneven surfaces without lifting. Therefore, the organic light-emitting display device 100 can also be used as a stretchable organic light-emitting display device with a curved shape.

[0062] Figure 5 It is along Figure 1 A cross-sectional view of the organic light-emitting display device taken along line I-I', and Figure 6 It is along Figure 1 A cross-sectional view taken from line II-II' of an organic light-emitting display device.

[0063] Reference Figure 5 and Figure 6 The organic light-emitting display device 100 may include a substrate 110, a buffer layer 115, a semiconductor element 250, a gate insulating layer 150, an interlayer insulating layer 190, a planarization layer 270, a sub-pixel structure 200, a pixel defining layer 310, a spacer 390, a thin-film encapsulation structure 450, and an organic pattern 454, etc. In this case, the substrate 110 may include a first organic film layer 111, a first barrier layer 112, a second organic film layer 113, and a second barrier layer 114. The semiconductor element 250 may include an active layer 130, a gate electrode 170, a source electrode 210, and a drain electrode 230. The sub-pixel structure 200 may include a lower electrode 290, a light-emitting layer 330, and an upper electrode 340. The thin-film encapsulation structure 450 may include a first inorganic thin-film encapsulation layer 451, an organic thin-film encapsulation layer 452, and a second inorganic thin-film encapsulation layer 453.

[0064] As described above, since the organic light-emitting display device 100 includes a pixel region 10 comprising a first sub-pixel region 11, a second sub-pixel region 12, and a third sub-pixel region 13, and a connection region 30, the substrate 110 can also be divided into a pixel region 10 comprising the first sub-pixel region 11, the second sub-pixel region 12, and the third sub-pixel region 13, and a connection region 30. Furthermore, in addition to the connection portion 120, Figure 5 The remaining portion of the substrate 110 shown can correspond to the display portion 520, and Figure 6 The blank space between the display portions 520 shown can correspond to the through hole 205.

[0065] A first organic film layer 111 can be provided. The first organic film layer 111 can include an organic material having flexibility. For example, the first organic film layer 111 can include a random copolymer or a block copolymer. Further, the first organic film layer 111 can have high transparency, low coefficient of thermal expansion, and high glass transition temperature. Since the first organic film layer 111 can include an imide group, its heat resistance, chemical resistance, wear resistance, and electrical properties can be improved (e.g., can be excellent). In one or more embodiments, the first organic film layer 111 can include a polyimide.

[0066] A first barrier layer 112 can be disposed on (e.g., in or on) the first organic film layer 111 at the pixel region 10 and the connection region 30. In other words, the first barrier layer 112 can be disposed throughout the first organic film layer 111. The first barrier layer 112 can block or substantially block moisture from penetrating through the first organic film layer 111. The first barrier layer 112 can include an inorganic material having flexibility. In one or more embodiments, the first barrier layer 112 can include a silicon compound or a metal oxide, etc. For example, the first barrier layer 112 can include silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), silicon oxycarbide (SiO x C y ), silicon carbonitride (SiC x N y ), aluminum oxide (AlO x ), aluminum nitride (AlN x ), tantalum oxide (TaO x ), hafnium oxide (HfO x ), zirconium oxide (ZrO x ), and / or titanium oxide (TiO x ), etc.

[0067] A second organic film layer 113 can be disposed on (e.g., in or on) the first barrier layer 112 at the pixel region 10 and the connection region 30. In other words, the second organic film layer 113 can be disposed throughout the first barrier layer 112. The second organic film layer 113 can include an organic material having flexibility. For example, the second organic film layer 113 can include a random copolymer or a block copolymer. In one or more embodiments, the second organic film layer 113 can include a polyimide.

[0068] The second barrier layer 114 can be disposed on (e.g., in or on) the second organic film layer 113 at the pixel area 10 and the connection area 30. In other words, the second barrier layer 114 can be disposed throughout the entire second organic film layer 113. The second barrier layer 114 can block or substantially block moisture from permeating through the second organic film layer 113. The second barrier layer 114 can include an inorganic material having flexibility. In one or more embodiments, the second barrier layer 114 can include silicon oxide or silicon nitride, or the like.

[0069] Accordingly, a substrate 110 including the first organic film layer 111, the first barrier layer 112, the second organic film layer 113, and the second barrier layer 114 can be provided.

[0070] Although the substrate 110 has been described as having four layers, the configuration of the substrate 110 according to one or more embodiments of the present disclosure is not limited thereto. For example, the substrate 110 can include a single layer or at least two layers.

[0071] In other embodiments, the substrate 110 can include a transparent material or an opaque material. For example, the substrate 110 can include a quartz substrate, a synthetic quartz substrate, a calcium fluoride substrate, a fluorine-doped quartz (F-doped quartz) substrate, an alkali lime glass substrate, and / or a non-alkali glass substrate, or the like.

[0072] The buffer layer 115 can be disposed on (e.g., in or on) the substrate 110 at the pixel area 10 and the connection area 30. In other words, the buffer layer 115 can be disposed throughout the entire substrate 110. The buffer layer 115 can prevent or substantially prevent metal atoms and / or impurities from diffusing from the substrate 110 into an upper structure, and can control a heat transport rate during a crystallization process for forming the active layer 130 to obtain a uniform or substantially uniform active layer 130. In addition, when a surface of the substrate 110 is not uniform or substantially uniform, the buffer layer 115 can be used to improve a flatness of the surface of the substrate 110. Depending on a kind of the substrate 110, at least two buffer layers 115 can be provided on the substrate 110, or the buffer layer 115 can not be provided (e.g., can be omitted). The buffer layer 115 can include an organic insulating material or an inorganic insulating material. In one or more embodiments, the buffer layer 115 can include an inorganic insulating material, and can block or substantially block moisture that can permeate through the substrate 110.

[0073] The active layer 130 can be disposed on (e.g., in or on) the buffer layer 115 at the pixel area 10. The active layer 130 can include a metal oxide semiconductor, an inorganic semiconductor (e.g., an amorphous silicon semiconductor or a polysilicon semiconductor), or an organic semiconductor, or the like. The active layer 130 can have a source region and a drain region.

[0074] The gate insulating layer 150 can be disposed on the buffer layer 115 and on (e.g., in or on) the active layer 130, at the pixel region 10 and the connection region 30. In other words, the gate insulating layer 150 can be disposed throughout the entire buffer layer 115. For example, the gate insulating layer 150 can sufficiently cover the active layer 130, and can have a flat or substantially flat top surface without creating a step around the active layer 130. As another example, the gate insulating layer 150 can be disposed along the profile of the active layer 130 to cover the active layer 130 on the buffer layer 115 with a uniform or substantially uniform thickness. The gate insulating layer 150 can include a silicon compound or a metal oxide, etc. In other embodiments, the gate insulating layer 150 can have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers can have different thicknesses from each other, or can include different materials from each other.

[0075] The gate electrode 170 can be disposed on the gate insulating layer 150, at the pixel region 10 (e.g., in or on). In other words, the gate electrode 170 can be disposed on a portion of the gate insulating layer 150 under which the active layer 130 is located. The gate electrode 170 can include a metal, a metal alloy, a metal nitride, a conductive metal oxide, and / or a transparent conductive material, etc. For example, the gate electrode 170 can include gold (Au), silver (Ag), aluminum (Al), platinum (Pt), nickel (Ni), titanium (Ti), palladium (Pd), magnesium (Mg), calcium (Ca), lithium (Li), chromium (Cr), tantalum (Ta), tungsten (W), copper (Cu), molybdenum (Mo), scandium (Sc), neodymium (Nd), iridium (Ir), an aluminum-containing alloy, aluminum nitride (AlN x ), a silver-containing alloy, tungsten nitride (WN x ), a copper-containing alloy, a molybdenum-containing alloy, titanium nitride (TiN x ), chromium nitride (CrN x ), tantalum nitride (TaN x ), strontium ruthenium oxide (SrRu x O y ), zinc oxide (ZnO x ), indium tin oxide (ITO), tin oxide (SnO x ), indium oxide (InO x ), gallium oxide (GaO x ), and / or indium zinc oxide (IZO), etc. These materials can be used alone or in combination with each other. In other embodiments, the gate electrode 170 can have a multi-layer structure including a plurality of metal layers. For example, the metal layers can have different thicknesses from each other, or can include different materials from each other.

[0076] The interlayer insulating layer 190 can be disposed on the gate insulating layer 150 and the gate electrode 170, at (e.g., in or on) the pixel area 10 and the connection area 30. In other words, the interlayer insulating layer 190 can be disposed throughout the entire gate insulating layer 150. For example, the interlayer insulating layer 190 can sufficiently cover the gate electrode 170 on the gate insulating layer 150 at (e.g., in or on) the pixel area 10, and can have a flat or substantially flat top surface without creating a step around the gate electrode 170. As another example, the interlayer insulating layer 190 can be disposed along the contour of the gate electrode 170 with a uniform or substantially uniform thickness to cover the gate electrode 170 on the gate insulating layer 150. The interlayer insulating layer 190 can include a silicon compound or a metal oxide, etc. In other embodiments, the interlayer insulating layer 190 can have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers can have different thicknesses from each other, or can include different materials from each other.

[0077] The source electrode 210 and the drain electrode 230 can be disposed on the interlayer insulating layer 190 at (e.g., in or on) the pixel area 10. The source electrode 210 can be connected to the source region of the active layer 130 through a contact hole formed by removing a first portion of the gate insulating layer 150 and the interlayer insulating layer 190, and the drain electrode 230 can be connected to the drain region of the active layer 130 through a contact hole formed by removing a second portion of the gate insulating layer 150 and the interlayer insulating layer 190. Each of the source electrode 210 and the drain electrode 230 can include a metal, a metal alloy, a metal nitride, a conductive metal oxide, and / or a transparent conductive material, etc. These materials can be used alone or in combination with each other. In other embodiments, each of the source electrode 210 and the drain electrode 230 can have a multi-layer structure including a plurality of metal layers. For example, the metal layers can have different thicknesses from each other, or can include different materials from each other.

[0078] Accordingly, a semiconductor element 250 including the active layer 130, the gate electrode 170, the source electrode 210, and the drain electrode 230 can be provided. For example, the organic light emitting display device 100 can include a plurality of semiconductor elements 250, and at least one semiconductor element 250 can be disposed at (e.g., in or on) each of the first sub-pixel area 11, the second sub-pixel area 12, and the third sub-pixel area 13.

[0079] Although one transistor (e.g., the semiconductor element 250) has been described as being disposed at each of the first to third sub-pixel regions 11, 12, and 13 (e.g., in or on), the configuration of the first to third sub-pixel regions 11, 12, and 13 according to one or more embodiments of the present disclosure is not limited thereto. For example, each of the first to third sub-pixel regions 11, 12, and 13 can have a configuration including at least two transistors and at least one capacitor.

[0080] Further, although the semiconductor element 250 has been described as having a top-gate structure, the configuration of the semiconductor element 250 according to one or more embodiments of the present disclosure is not limited thereto. For example, the semiconductor element 250 can have a bottom-gate structure and / or a dual-gate structure.

[0081] The planarization layer 270 can be disposed on the interlayer insulating layer 190, the source electrode 210, and the drain electrode 230, at the pixel region 10 and the connection region 30 (e.g., in or on). In other words, the planarization layer 270 can be disposed throughout the entire interlayer insulating layer 190. For example, the planarization layer 270 can have a relatively thick thickness to sufficiently cover the source electrode 210 and the drain electrode 230 on the interlayer insulating layer 190. In this case, the planarization layer 270 can have a planar or substantially planar top surface. To achieve such a planar or substantially planar top surface of the planarization layer 270, a planarization process can be additionally performed on the planarization layer 270. Further, the planarization layer 270 can have a contact hole that exposes a top surface of the drain electrode 230. The planarization layer 270 can include an organic material or an inorganic material. In one or more embodiments, the planarization layer 270 can include an organic insulating material.

[0082] The lower electrode 290 can be disposed on the planarization layer 270, at the pixel region 10 (e.g., in or on). The lower electrode 290 can contact (e.g., can be in direct contact with) the drain electrode 230 through the contact hole in the planarization layer 270, and the lower electrode 290 can be electrically connected to the semiconductor element 250. The lower electrode 290 can include a metal, a metal alloy, a metal nitride, a conductive metal oxide, and / or a transparent conductive material, etc. These materials can be used alone or in combination with each other. In other embodiments, the lower electrode 290 can have a multi-layer structure including a plurality of metal layers. For example, the metal layers can have different thicknesses from each other, or can include different materials from each other.

[0083] The pixel definition layer 310 can be disposed on the planarization layer 270, at (e.g., in or on) the pixel area 10. In other words, the pixel definition layer 310 can be disposed on a portion of the lower electrode 290 and on a portion of the planarization layer 270. The pixel definition layer 310 can cover opposite sides (e.g., opposite edge portions) of the lower electrode 290 and can have an opening that exposes a portion of the top surface of the lower electrode 290. In some embodiments, the pixel definition layer 310 can also be disposed on the planarization layer 270, at (e.g., in or on) the connection area 30. The pixel definition layer 310 can be formed of an organic material or an inorganic material. In one or more embodiments, the pixel definition layer 310 can include an organic insulating material.

[0084] The spacer 390 can be disposed on the pixel definition layer 310, at (e.g., in or on) the pixel area 10. The spacer 390 can perform a function of supporting a metal mask. The spacer 390 can include an organic material or an inorganic material.

[0085] The light emitting layer 330 can be disposed on the lower electrode 290, at (e.g., in or on) the pixel area 10. In other words, the light emitting layer 330 can be disposed on the lower electrode 290 exposed by the opening of the pixel definition layer 310. The light emitting layer 330 can be formed by using at least one of various suitable light emitting materials for emitting different colors of light (e.g., red light, green light, and / or blue light, etc.) according to sub-pixels. As another example, the light emitting layer 330 can be formed by stacking multiple light emitting materials for generating different colors of light (e.g., such as red light, green light, and blue light) to emit white light as a whole. In this case, a color filter can be disposed on the light emitting layer 330 (e.g., on the thin film encapsulation structure 450 to overlap with the light emitting layer 330). The color filter can include at least one of a red color filter, a green color filter, and a blue color filter. In some embodiments, the color filter can include a yellow color filter, a cyan color filter, and a magenta color filter. The color filter can include a photosensitive resin or a colored photoresist.

[0086] The upper electrode 340 can be disposed on the planarization layer 270, the pixel definition layer 310, the spacer 390, and the light emitting layer 330, at (e.g., in or on) the pixel area 10 and the connection area 30. In other words, the upper electrode 340 can be disposed throughout the entire substrate 110. In some embodiments, the upper electrode 340 can be disposed at (e.g., in or on) the pixel area 10, on the planarization layer 270, without being disposed at (e.g., in or on) the connection area 30, on the planarization layer 270. The upper electrode 340 can include a metal, a metal alloy, a metal nitride, a conductive metal oxide, and / or a transparent conductive material, etc. These materials can be used alone or in combination with each other. In other embodiments, the upper electrode 340 can have a multi-layer structure including a plurality of metal layers. For example, the metal layers can have different thicknesses from each other, or can include different materials from each other.

[0087] Accordingly, a sub-pixel structure 200 including the lower electrode 290, the light emitting layer 330, and the upper electrode 340 can be provided. For example, the organic light emitting display device 100 can include a plurality of lower electrodes 290 and a plurality of light emitting layers 330. In this case, one lower electrode 290 and one light emitting layer 330 can be disposed at (e.g., in or on) each of the first to third sub-pixel areas 11, 12, and 13, and the upper electrode 340 can be disposed on the plurality of lower electrodes 290 and the plurality of light emitting layers 330.

[0088] The first inorganic thin film encapsulation layer 451 can be disposed on the upper electrode 340 throughout the entire pixel area 10 and the connection area 30. In other words, the first inorganic thin film encapsulation layer 451 can be disposed on the upper electrode 340, the sidewall of the substrate 110, the sidewall of the buffer layer 115, the sidewall of the gate insulating layer 150, the sidewall of the interlayer insulating layer 190, and the sidewall of the planarization layer 270. As shown in FIG. 4B, the sidewalls of these layers can be adjacent to the via 205. The first inorganic thin film encapsulation layer 451 can be disposed in a uniform or substantially uniform thickness along the contour of the upper electrode 340 and the sidewall of each of the substrate 110, the buffer layer 115, the gate insulating layer 150, the interlayer insulating layer 190, and the planarization layer 270 to cover the upper electrode 340 and the sidewall of each of the substrate 110, the buffer layer 115, the gate insulating layer 150, the interlayer insulating layer 190, and the planarization layer 270. In other words, the first inorganic thin film encapsulation layer 451 can extend in a direction from the sub-pixel structure 200 located under the first inorganic thin film encapsulation layer 451 to the via 205, and can be disposed between the sidewall of the substrate 110 adjacent to the via 205 and the organic pattern 454. Figure 6

[0089] ​In one or more embodiments, the first inorganic thin film encapsulation layer 451 can completely cover the sidewalls of each of the substrate 110, the buffer layer 115, the gate insulating layer 150, the interlayer insulating layer 190, and the planarization layer 270. In addition, the first inorganic thin film encapsulation layer 451 can extend in a direction opposite to the third direction D3 on the sidewalls of each of the substrate 110, the buffer layer 115, the gate insulating layer 150, the interlayer insulating layer 190, and the planarization layer 270, and can have a protrusion protruding from a portion of the first inorganic thin film encapsulation layer 451 adjacent to a bottom surface of the substrate 110 (e.g., adjacent to a bottom surface of the first organic film layer 111) in a direction from the sidewall of the substrate 110 to the via hole 205.

[0090] The first inorganic thin film encapsulation layer 451 can prevent or substantially prevent degradation of the sub-pixel structure 200 due to penetration of moisture and / or oxygen, etc. In addition, the first inorganic thin film encapsulation layer 451 can also perform a function of protecting the sub-pixel structure 200 from external impact. The first inorganic thin film encapsulation layer 451 can include one or more inorganic insulating materials having flexibility.

[0091] The organic thin film encapsulation layer 452 can be disposed on the first inorganic thin film encapsulation layer 451, at the pixel area 10 (e.g., in or on). The organic thin film encapsulation layer 452 can improve the flatness of the organic light emitting display apparatus 100, and can protect the sub-pixel structure 200 together with the first inorganic thin film encapsulation layer 451. The organic thin film encapsulation layer 452 can include one or more organic materials having flexibility. In some embodiments, the organic thin film encapsulation layer 452 can be disposed on the first inorganic thin film encapsulation layer 451, at the connection area 30 (e.g., in or on).

[0092] The organic pattern 454 can be disposed on the sidewall of the substrate 110 adjacent to the via hole 205. In other words, the organic pattern 454 can be disposed on the protrusion of the first inorganic thin film encapsulation layer 451. In one or more embodiments, in a plan view of the organic light emitting display device 100, the organic pattern 454 can be disposed along the outermost periphery of an area defined by adjacent pixel areas 10 among the pixel areas 10 and the connection areas 30 configured to be connected to each other with the adjacent pixel areas 10. In other words, the organic pattern 454 can be disposed on the protrusion of the first inorganic thin film encapsulation layer 451 along the outermost periphery contour of the via hole 205. For example, a bottom surface of the organic pattern 454 can contact (e.g., can be in contact with) the protrusion of the first inorganic thin film encapsulation layer 451, a top surface of the organic pattern 454 can contact (e.g., can be in contact with) the second inorganic thin film encapsulation layer 453, a first side surface of the organic pattern 454 can contact (e.g., can be in contact with) the first inorganic thin film encapsulation layer 451, and a second side surface (e.g., opposite to the first side surface) of the organic pattern 454 can be exposed.

[0093] The organic pattern 454 can include one or more organic insulating materials having flexibility. In one or more embodiments, the organic pattern 454 can include the same or substantially the same material as that of the organic thin film encapsulation layer 452. For example, the organic pattern 454 can include photoresist, acrylic, polypropylene, polyimide, polyamide, epoxy, acrylate monomer, phenylacetylene, diamine, anhydride, siloxane, polysiloxane, silane, parylene, olefin-based polymer (polyethylene or polypropylene), polyethylene terephthalate, and / or fluorine, etc. In some embodiments, the organic pattern 454 can include a resin including an organic insulating material as a base material.

[0094] The second inorganic thin film encapsulation layer 453 can be disposed on the first inorganic thin film encapsulation layer 451 and the organic thin film encapsulation layer 452 throughout the entire area of the pixel area 10 and the connection area 30. The second inorganic thin film encapsulation layer 453 can be disposed along the contour of the first inorganic thin film encapsulation layer 451 and the organic thin film encapsulation layer 452 with a uniform or substantially uniform thickness to cover the organic thin film encapsulation layer 452. In other words, the second inorganic thin film encapsulation layer 453 can extend in a direction from the sub-pixel structure 200 located under the second inorganic thin film encapsulation layer 453 to the through hole 205, and can be disposed on the first inorganic thin film encapsulation layer 451 and the organic pattern 454 disposed on the side wall of the substrate 110 adjacent to the through hole 205. The second inorganic thin film encapsulation layer 453 can prevent or substantially prevent the degradation of the sub-pixel structure 200 due to the penetration of moisture and / or oxygen, etc., together with the first inorganic thin film encapsulation layer 451. In addition, the second inorganic thin film encapsulation layer 453 can also perform a function of protecting the sub-pixel structure 200 from external impact together with the first inorganic thin film encapsulation layer 451 and the organic thin film encapsulation layer 452. The second inorganic thin film encapsulation layer 453 can include one or more inorganic insulating materials having flexibility.

[0095] Accordingly, a thin film encapsulation structure 450 including the first inorganic thin film encapsulation layer 451, the organic thin film encapsulation layer 452, and the second inorganic thin film encapsulation layer 453 can be provided.

[0096] In other embodiments, the thin film encapsulation structure 450 can have a five-layer structure in which three inorganic thin film encapsulation layers and two organic thin film encapsulation layers are stacked with each other, or a seven-layer structure in which four inorganic thin film encapsulation layers and three organic thin film encapsulation layers are stacked with each other.

[0097] As described above, an organic light emitting display device 100 including the substrate 110, the buffer layer 115, the semiconductor element 250, the gate insulating layer 150, the interlayer insulating layer 190, the planarization layer 270, the sub-pixel structure 200, the pixel definition layer 310, the spacer 390, the thin film encapsulation structure 450, and the organic pattern 454 can be provided.

[0098] As a comparative example, during a process of peeling off the substrate from the glass substrate in a method of manufacturing a comparative organic light emitting display device, the second inorganic thin film encapsulation layer can be excessively torn on the side wall of the substrate so that only the first inorganic thin film encapsulation layer can remain on the side wall of the substrate. In this case, a path for blocking the penetration of water and / or moisture that can penetrate from the outside can be relatively shortened at the side wall of the substrate, which can cause the water and / or moisture to penetrate into the substrate. Accordingly, a defect can be caused in the comparative organic light emitting display device.

[0099] According to one or more embodiments of the disclosure, the organic light emitting display device 100 includes the first inorganic thin film encapsulation layer 451 and the second inorganic thin film encapsulation layer 453 that completely cover side walls of each of the substrate 110, the buffer layer 115, the gate insulating layer 150, the interlayer insulating layer 190, and the planarization layer 270, so that water and / or moisture that can penetrate into the side walls from the outside through the via hole 205 can be blocked or substantially blocked (e.g., can be completely blocked).

[0100] Further, because the organic pattern 454 can be disposed on the side wall of the substrate 110 adjacent to the via hole 205, a path for blocking penetration of water and / or moisture can be relatively increased at the side wall of the substrate 110.

[0101] Figures 7 to 22 is a view illustrating a method of manufacturing an organic light emitting display device according to one or more embodiments of the disclosure.

[0102] Referring to Figure 7 and Figure 8 A rigid glass substrate 105 can be provided. The glass substrate 105 can include a pixel area 10, a connection area 30, and a contact area 40. In this case, one of the pixel areas 10 can include a first sub-pixel area 11, a second sub-pixel area 12, and a third sub-pixel area 13.

[0103] The pixel areas 10 can be disposed in a first direction D1 and a second direction D2. The pixel areas 10 can be spaced apart from each other, and the connection areas 30 can be respectively located between adjacent ones of the pixel areas 10. In other words, one connection area 30 can be located between two adjacent ones of the pixel areas 10. Further, one of the contact areas 40 can correspond to an area defined by adjacent ones of the pixel areas 10 and the connection areas 30 respectively located between the adjacent ones of the pixel areas 10. In other words, one of the contact areas 40 can be surrounded (e.g., around a periphery thereof) by at least four adjacent ones of the pixel areas 10 and at least four connection areas 30 configured to connect the at least four adjacent ones of the pixel areas 10 to each other.

[0104] Referring to Figure 9 and Figure 10The contact pattern 135 can be formed on the glass substrate 105, at (e.g., in or on) the contact region 40. The contact pattern 135 can include a protrusion protruding from a top surface of the contact pattern 135 at an outermost portion of the contact pattern 135 in the third direction D3. The contact pattern 135 can be formed by using amorphous silicon. For example, the contact pattern 135 can be formed by using a material having a relatively high adhesion strength with respect to the preliminary first organic film layer 511, which will be described in more detail below. In some embodiments, the contact pattern 135 can be formed by using a metal, a metal alloy, a metal nitride, a conductive metal oxide, or a transparent conductive material, etc.

[0105] Referring to Figure 11 and Figure 12 The preliminary first organic film layer 511 can be formed on the glass substrate 105 and the contact pattern 135, at (e.g., in or on) the pixel region 10, the connection region 30, and the contact region 40. In other words, the preliminary first organic film layer 511 can be formed throughout the entire glass substrate 105. The preliminary first organic film layer 511 can be formed by using an organic material having flexibility. For example, the preliminary first organic film layer 511 can include a random copolymer or a block copolymer. In addition, the preliminary first organic film layer 511 can have high transparency, a low coefficient of thermal expansion, and a high glass transition temperature. Because the preliminary first organic film layer 511 includes imide groups, its heat resistance, chemical resistance, abrasion resistance, and electrical properties can be improved (e.g., can be excellent). In one or more embodiments, the preliminary first organic film layer 511 can include a polyimide.

[0106] The preliminary first barrier layer 512 can be formed on the preliminary first organic film layer 511, at (e.g., in or on) the pixel region 10, the connection region 30, and the contact region 40. In other words, the preliminary first barrier layer 512 can be formed throughout the entire preliminary first organic film layer 511. The preliminary first barrier layer 512 can block or substantially block the penetration of moisture through the preliminary first organic film layer 511. The preliminary first barrier layer 512 can be formed by using an inorganic material having flexibility. In one or more embodiments, the preliminary first barrier layer 512 can include a silicon compound or a metal oxide, etc. For example, the preliminary first barrier layer 512 can include silicon oxide, silicon nitride, silicon oxynitride, silicon oxycarbide, silicon carbonitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide, zirconium oxide, and / or titanium oxide, etc.

[0107] A preliminary second organic film layer 513 can be formed on the preliminary first barrier layer 512, at (e.g., in or on) the pixel area 10, the connection area 30, and the contact area 40. In other words, the preliminary second organic film layer 513 can be formed throughout the entire preliminary first barrier layer 512. The preliminary second organic film layer 513 can be formed by using an organic material having flexibility. For example, the preliminary second organic film layer 513 can include a random copolymer or a block copolymer. In one or more embodiments, the preliminary second organic film layer 513 can include polyimide.

[0108] A preliminary second barrier layer 514 can be formed on the preliminary second organic film layer 513, at (e.g., in or on) the pixel area 10, the connection area 30, and the contact area 40. In other words, the preliminary second barrier layer 514 can be formed throughout the entire preliminary second organic film layer 513. The preliminary second barrier layer 514 can block or substantially block moisture from penetrating through the preliminary second organic film layer 513. The preliminary second barrier layer 514 can be formed by using an inorganic material having flexibility. In one or more embodiments, the preliminary second barrier layer 514 can include silicon oxide or silicon nitride, etc.

[0109] Accordingly, a preliminary substrate 510 including the preliminary first organic film layer 511, the preliminary first barrier layer 512, the preliminary second organic film layer 513, and the preliminary second barrier layer 514 can be formed.

[0110] Referring to Figure 13 The buffer layer 115 can be formed on the preliminary substrate 510, at (e.g., in or on) the pixel area 10, the connection area 30, and the contact area 40. In other words, the buffer layer 115 can be formed throughout the entire preliminary substrate 510. Depending on the kind of the preliminary substrate 510, at least two buffer layers 115 can be provided on the preliminary substrate 510, or the buffer layer 115 can not be formed (e.g., can be omitted). The buffer layer 115 can be formed by using an inorganic insulating material, and can block or substantially block moisture from penetrating through the preliminary substrate 510.

[0111] The active layer 130 can be formed on the buffer layer 115, at (e.g., in or on) the pixel area 10. The active layer 130 can be formed by using a metal oxide semiconductor, an inorganic semiconductor, or an organic semiconductor, etc. The active layer 130 can have a source region and a drain region.

[0112] The gate insulating layer 150 can be formed on (e.g., in or on) the buffer layer 115 and the active layer 130 at the pixel area 10, the connection area 30, and the contact area 40. In other words, the gate insulating layer 150 can be formed throughout the entire buffer layer 115. For example, the gate insulating layer 150 can sufficiently cover the active layer 130, and can have a flat or substantially flat top surface without creating a step around the active layer 130. As another example, the gate insulating layer 150 can be formed along the profile of the active layer 130 with a uniform or substantially uniform thickness to cover the active layer 130 on the buffer layer 115. The gate insulating layer 150 can be formed by using a silicon compound or a metal oxide, etc. In other embodiments, the gate insulating layer 150 can have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers can have different thicknesses from each other, or can include different materials from each other.

[0113] The gate electrode 170 can be formed on the gate insulating layer 150 at the pixel area 10 (e.g., in or on). In other words, the gate electrode 150 can be formed on a portion of the gate insulating layer 150 under which the active layer 130 is located. The gate electrode 170 can be formed by using a metal, a metal alloy, a metal nitride, a conductive metal oxide, and / or a transparent conductive material, etc. For example, the gate electrode 170 can include gold, silver, aluminum, platinum, nickel, titanium, palladium, magnesium, calcium, lithium, chromium, tantalum, tungsten, copper, molybdenum, scandium, neodymium, iridium, an aluminum-containing alloy, aluminum nitride, a silver-containing alloy, tungsten nitride, a copper-containing alloy, a molybdenum-containing alloy, titanium nitride, chromium nitride, tantalum nitride, strontium ruthenium oxide, zinc oxide, indium tin oxide, tin oxide, indium oxide, gallium oxide, and / or indium zinc oxide, etc. These materials can be used alone or in combination with each other. In other embodiments, the gate electrode 170 can have a multi-layer structure including a plurality of metal layers. For example, the metal layers can have different thicknesses from each other, or can include different materials from each other.

[0114] The interlayer insulating layer 190 can be formed on the gate insulating layer 150 and the gate electrode 170, at the pixel region 10, the connection region 30, and the contact region 40 (e.g., on or over). In other words, the interlayer insulating layer 190 can be formed throughout the gate insulating layer 150. For example, the interlayer insulating layer 190 can sufficiently cover the gate electrode 170 on the gate insulating layer 150 at (e.g., on or over) the pixel region 10, and can have a flat or substantially flat top surface without creating a step around the gate electrode 170. As another example, the interlayer insulating layer 190 can be formed along the contour of the gate electrode 170 with a uniform or substantially uniform thickness to cover the gate electrode 170 on the gate insulating layer 150. The interlayer insulating layer 190 can be formed by using a silicon compound or a metal oxide, etc. In other embodiments, the interlayer insulating layer 190 can have a multi-layer structure including a plurality of insulating layers. For example, the insulating layers can have different thicknesses from each other, or can include different materials from each other.

[0115] The source electrode 210 and the drain electrode 230 can be formed on the interlayer insulating layer 190 at (e.g., on or over) the pixel region 10. The source electrode 210 can be connected to the source region of the active layer 130 through a contact hole formed by removing a first portion of the gate insulating layer 150 and the interlayer insulating layer 190, and the drain electrode 230 can be connected to the drain region of the active layer 130 through a contact hole formed by removing a second portion of the gate insulating layer 150 and the interlayer insulating layer 190. Each of the source electrode 210 and the drain electrode 230 can be formed by using a metal, a metal alloy, a metal nitride, a conductive metal oxide, and / or a transparent conductive material, etc. These materials can be used alone or in combination with each other. In other embodiments, each of the source electrode 210 and the drain electrode 230 can have a multi-layer structure including a plurality of metal layers. For example, the metal layers can have different thicknesses from each other, or can include different materials from each other.

[0116] Accordingly, a semiconductor element 250 including the active layer 130, the gate electrode 170, the source electrode 210, and the drain electrode 230 can be formed.

[0117] Referring to Figure 14The planarization layer 270 can be formed on (e.g., in or on) the interlayer insulating layer 190, the source electrode 210 and the drain electrode 230, at the pixel region 10, the connection region 30 and the contact region 40. In other words, the planarization layer 270 can be formed throughout the entire interlayer insulating layer 190. For example, the planarization layer 270 can have a relatively thick thickness to sufficiently cover the source electrode 210 and the drain electrode 230 on the interlayer insulating layer 190. In this case, the planarization layer 270 can have a planar or substantially planar top surface. To achieve such a planar or substantially planar top surface of the planarization layer 270, a planarization process can be additionally performed on the planarization layer 270. Further, the planarization layer 270 can have a contact hole exposing a top surface of the drain electrode 230. The planarization layer 270 can be formed by using an organic insulating material.

[0118] The lower electrode 290 can be formed on (e.g., in or on) the planarization layer 270, at the pixel region 10. The lower electrode 290 can contact (e.g., can be in direct contact with) the drain electrode 230 through the contact hole of the planarization layer 270. The lower electrode 290 can be formed by using a metal, a metal alloy, a metal nitride, a conductive metal oxide and / or a transparent conductive material, etc. These materials can be used alone or in combination with each other. In other embodiments, the lower electrode 290 can have a multi-layer structure including a plurality of metal layers. For example, the metal layers can have different thicknesses from each other, or can include different materials from each other.

[0119] The pixel-defining layer 310 can be formed on the planarization layer 270, at the pixel region 10. In other words, the pixel-defining layer 310 can be formed on a portion of the lower electrode 290 as well as on a portion of the planarization layer 270. The pixel-defining layer 310 can cover opposite side portions (e.g., opposite edge portions) of the lower electrode 290, and can have an opening exposing a portion of a top surface of the lower electrode 290. The pixel-defining layer 310 can be formed by using an organic insulating material.

[0120] The spacer 390 can be formed on the pixel-defining layer 310, at the pixel region 10. The spacer 390 can perform a function of supporting a metal mask. The pixel-defining layer 310 and the spacer 390 can be concurrently (e.g., simultaneously) formed by using a half-tone slit mask, from the same or substantially the same material.

[0121] The light emitting layer 330 can be formed on the lower electrode 290, at the pixel area 10 (e.g., in or on). In other words, the light emitting layer 330 can be formed on the lower electrode 290 exposed by the opening of the pixel defining layer 310. The light emitting layer 330 can be formed by using at least one of various suitable light emitting materials for emitting different colors of light (e.g., red, green, and / or blue light, etc.) according to sub-pixels. As another example, the light emitting layer 330 can be formed by stacking a plurality of light emitting materials for generating different colors of light (e.g., such as red, green, and blue light) to emit white light as a whole. In this case, a color filter can be formed on the light emitting layer 330. The color filter can include at least one of a red color filter, a green color filter, and a blue color filter. In some embodiments, the color filter can include a yellow color filter, a cyan color filter, and a magenta color filter. The color filter can be formed by using a photosensitive resin or a color photoresist.

[0122] The upper electrode 340 can be formed on the planarization layer 270, the pixel defining layer 310, the spacer 390, and the light emitting layer 330, at the pixel area 10, the connection area 30, and the contact area 40 (e.g., in or on). In other words, the upper electrode 340 can be formed throughout the entire preliminary substrate 510. The upper electrode 340 can be formed by using a metal, a metal alloy, a metal nitride, a conductive metal oxide, and / or a transparent conductive material, etc. These materials can be used alone or in combination with each other. In other embodiments, the upper electrode 340 can have a multi-layer structure including a plurality of metal layers. For example, the metal layers can have different thicknesses from each other, or can include different materials from each other.

[0123] Accordingly, the sub-pixel structure 200 including the lower electrode 290, the light emitting layer 330, and the upper electrode 340 can be formed.

[0124] Referring to Figure 15 The laser can be irradiated onto the preliminary substrate 510, the buffer layer 115, the gate insulating layer 150, the interlayer insulating layer 190, the planarization layer 270, and a portion of the upper electrode 340 overlapping with the outermost portion of the contact area 40.

[0125] Referring to Figure 16 and Figure 17The portions of the preliminary substrate 510, the buffer layer 115, the gate insulating layer 150, the interlayer insulating layer 190, the planarization layer 270, and the upper electrode 340 located at the laser irradiation can be removed, and the opening 215 can be formed in the outermost peripheral portion of the contact area 40. The opening 215 can expose a portion of the contact pattern 135 and a portion of the glass substrate 105. After the opening 215 is formed, the preliminary substrate 510 on the glass substrate 105 at (e.g., in or on) the pixel area 10 and the contact area 30 can be defined as the substrate 110. For example, the substrate 110 can be located at (e.g., in or on) the outer side periphery of the opening 215. In addition, the portions of the preliminary substrate 510, the buffer layer 115, the gate insulating layer 150, the interlayer insulating layer 190, the planarization layer 270, and the upper electrode 340 formed on the contact pattern 135 of the glass substrate 105 can be defined as the first dummy pattern 610. For example, the first dummy pattern 610 can be located at (e.g., in or on) the inner side of the opening 215.

[0126] Referring to Figure 18 The first inorganic thin film encapsulation layer 451 can be formed on the glass substrate 105 throughout the entire area of the pixel area 10, the connection area 30, and the contact area 40. In other words, the first inorganic thin film encapsulation layer 451 can be formed on the upper electrode 340, the sidewall of the substrate 110, the sidewall of the buffer layer 115, the sidewall of the gate insulating layer 150, the sidewall of the interlayer insulating layer 190, the sidewall of the planarization layer 270, the sidewall of the first dummy pattern 610, the top surface of the glass substrate 105 at (e.g., in or on) the opening 215, and the protrusion of the contact pattern 135 at (e.g., in or on) the opening 215. The sidewalls of these layers can be adjacent to the opening 215. In addition, the first inorganic thin film encapsulation layer 451 can also be formed on the first dummy pattern 610.

[0127] The first inorganic thin film encapsulation layer 451 can be formed in a uniform or substantially uniform thickness along the profile of each of the upper electrode 340, the substrate 110, the buffer layer 115, the gate insulating layer 150, the interlayer insulating layer 190, the planarization layer 270, and the sidewall of the first dummy pattern 610, the top surface of the glass substrate 105 at (e.g., in or on) the opening 215, and the protrusion of the contact pattern 135 at (e.g., in or on) the opening 215 to cover each of the upper electrode 340, the substrate 110, the buffer layer 115, the gate insulating layer 150, the interlayer insulating layer 190, the planarization layer 270, and the sidewall of the first dummy pattern 610, the top surface of the glass substrate 105 at (e.g., in or on) the opening 215, and the protrusion of the contact pattern 135 at (e.g., in or on) the opening 215. The first inorganic thin film encapsulation layer 451 can prevent or substantially prevent degradation of the sub-pixel structure 200 due to penetration of moisture and / or oxygen, etc. In addition, the first inorganic thin film encapsulation layer 451 can also perform a function of protecting the sub-pixel structure 200 from external impact. The first inorganic thin film encapsulation layer 451 can be formed by using one or more inorganic insulating materials having flexibility.

[0128] Referring to Figure 19 The organic thin film encapsulation layer 452 can be formed on the first inorganic thin film encapsulation layer 451 at (e.g., in or on) the pixel area 10. When the organic thin film encapsulation layer 452 is formed on the first inorganic thin film encapsulation layer 451, a portion of the organic thin film encapsulation layer 452 can be formed in the opening 215. In this case, the portion of the organic thin film encapsulation layer 452 formed in the opening 215 is defined as an organic pattern 454. In some embodiments, the organic thin film encapsulation layer 452 can be formed on the first inorganic thin film encapsulation layer 451 at (e.g., in or on) the connection area 30. The organic thin film encapsulation layer 452 can improve the flatness of the organic light emitting display device and can protect the sub-pixel structure 200 together with the first inorganic thin film encapsulation layer 451. The organic thin film encapsulation layer 452 can be formed by using one or more organic insulating materials having flexibility.

[0129] Because the organic pattern 454 is formed in the opening 215, the organic pattern 454 can be formed along the outermost periphery of the contact area 40. In other words, the organic pattern 454 can be formed on the first inorganic thin film encapsulation layer 451 along the contour of the opening 215. As described above, the organic pattern 454 can be formed concurrently (e.g., simultaneously) with the organic thin film encapsulation layer 452 by using a material that is the same as or substantially the same as the material of the organic thin film encapsulation layer 452. For example, the organic pattern 454 can include an organic insulating material such as a photoresist, an acrylic, a polypropylene, a polyimide, a polyamide, an epoxy, an acrylate monomer, a phenylacetylene, a diamine, an acid anhydride, a siloxane, a polysiloxane, a silane, a parylene, an olefin-based polymer, a polyethylene terephthalate, and / or a fluorine. In some embodiments, the organic pattern 454 can include a resin including the organic insulating material as a base material.

[0130] Referring to Figure 20 The second inorganic thin film encapsulation layer 453 can be formed on the first inorganic thin film encapsulation layer 451 and the organic thin film encapsulation layer 452 throughout the entire area of the pixel area 10, the connection area 30, and the contact area 40. The second inorganic thin film encapsulation layer 453 can be formed along the contours of the first inorganic thin film encapsulation layer 451, the organic thin film encapsulation layer 452, and the organic pattern 454 with a uniform or substantially uniform thickness to cover the organic thin film encapsulation layer 452. In other words, the second inorganic thin film encapsulation layer 453 can be formed on the first inorganic thin film encapsulation layer 451 formed on the sidewall of the substrate 110 adjacent to the opening 215 and can cover the organic pattern 454. Accordingly, the organic pattern 454 can be surrounded (e.g., around the periphery thereof) by the first inorganic thin film encapsulation layer 451 and the second inorganic thin film encapsulation layer 453. Further, the second inorganic thin film encapsulation layer 453 can also be formed on the first dummy pattern 610.

[0131] The second inorganic thin film encapsulation layer 453 can prevent or substantially prevent the degradation of the sub-pixel structure 200 due to the penetration of moisture and / or oxygen, etc., together with the first inorganic thin film encapsulation layer 451. Further, the second inorganic thin film encapsulation layer 453 can also perform a function of protecting the sub-pixel structure 200 from external impact together with the first inorganic thin film encapsulation layer 451 and the organic thin film encapsulation layer 452. The second inorganic thin film encapsulation layer 453 can be formed by using one or more inorganic insulating materials having flexibility.

[0132] For the comparative example, in the process of forming the second inorganic thin film encapsulation layer in the method of manufacturing the comparative organic light emitting display device not including the contact pattern 135 and the organic pattern 454, the depth of the opening in the third direction D3 can be increased (e.g., can be deeper), and the width of the opening in the second direction D2 can be reduced by forming the first inorganic thin film encapsulation layer in the opening. Accordingly, the thickness of the second inorganic thin film encapsulation layer can become relatively thinner at the lower end of the opening (e.g., at the portion of the substrate on which the opening is located). In this case, during the process of peeling the substrate from the glass substrate in the method of manufacturing the comparative organic light emitting display device, the second inorganic thin film encapsulation layer can be excessively torn off on the sidewall of the substrate, such that only the first inorganic thin film encapsulation layer can remain on the sidewall of the substrate. In this case, the path for blocking the infiltration of water and / or moisture that can infiltrate from the outside can be relatively shortened at the sidewall of the substrate, which can cause the water and / or moisture to infiltrate into the substrate.

[0133] According to one or more embodiments of the present disclosure, because the protrusion of the contact pattern 135 and the organic pattern 454 are formed at the portion of the glass substrate 105 on which the opening 215 is located, the second inorganic thin film encapsulation layer 453 can not extend to the lower end of the opening 215. Accordingly, in the process of forming the second inorganic thin film encapsulation layer 453, the thickness of the second inorganic thin film encapsulation layer 453 can not become thinner within the opening 215.

[0134] Referring to Figure 21 and Figure 22 , the first dummy pattern 610 on which the first inorganic thin film encapsulation layer 451 and the second inorganic thin film encapsulation layer 453 are formed is defined as the second dummy pattern 620. Also, the substrate 110 located at each of the pixel areas 10 (e.g., in or on) is defined as the display portion 520, and the substrate 110 located at each of the connection areas 30 (e.g., in or on) is defined as the connection portion 120. In other words, the substrate 110 can include the display portion 520 and the connection portion 120.

[0135] When the second dummy pattern 620 formed on the contact pattern 135 is fixed to the glass substrate 105, the substrate 110 can be peeled from the glass substrate 105 in the third direction D3. In this case, the second dummy pattern 620 can have a relatively large adhesion strength by contacting the contact pattern 135 (e.g., by contacting the contact pattern 135), such that the second dummy pattern 620 can not be peeled from the contact pattern 135 in the peeling process. In the peeling process, a portion of the first inorganic thin film encapsulation layer 451, a portion of the organic pattern 454, and a portion of the second inorganic thin film encapsulation layer 453 can remain at the portion overlapping the protrusion of the contact pattern 135.

[0136] In one or more embodiments, because the protrusions of the contact pattern 135 are formed in the openings 215, the area in which the first inorganic thin film encapsulation layer 451 contacts the glass substrate 105 can be relatively reduced, and the first inorganic thin film encapsulation layer 451 can be easily peeled from the glass substrate 105 in a peeling process.

[0137] When the substrate 110 is peeled, the portions of the first inorganic thin film encapsulation layer 451, the organic pattern 454, and the second inorganic thin film encapsulation layer 453 located in the openings 215 can be separated. Accordingly, the first inorganic thin film encapsulation layer 451 can form protrusions protruding from a portion of the first inorganic thin film encapsulation layer 451 adjacent to a bottom surface of the substrate 110 (e.g., adjacent to a bottom surface of the first organic film layer 111) in a direction from a sidewall of the substrate 110 to the openings 215. In addition, the organic pattern 454 can be located on the protrusions of the first inorganic thin film encapsulation layer 451. For example, a bottom surface of the organic pattern 454 can contact (e.g., can be in contact with) the protrusions of the first inorganic thin film encapsulation layer 451, a top surface of the organic pattern 454 can contact (e.g., can be in contact with) the second inorganic thin film encapsulation layer 453, a first side surface of the organic pattern 454 can contact (e.g., can be in contact with) the first inorganic thin film encapsulation layer 451, and a second side surface (e.g., opposite the first side surface) of the organic pattern 454 can be exposed. The second inorganic thin film encapsulation layer 453 can be located on the organic pattern 454.

[0138] As shown in Figure 22 The via hole 205 can be formed around (e.g., around a periphery of) the substrate 110 formed at (e.g., in or on) the adjacent pixel regions 10 (e.g., the display portion 520) and the connection region 30 (e.g., the connection portion 120) between the adjacent pixel regions 10, respectively. For example, the via hole 205 can correspond to the contact region 40 at which (e.g., in or on) the openings 215, the contact pattern 135, and the second dummy pattern 620 are formed. In one or more embodiments, the organic pattern 454 can be formed on the protrusions of the first inorganic thin film encapsulation layer 451 along an outermost periphery contour of the via hole 205.

[0139] Accordingly, the organic light emitting display device 100 shown in Figure 1 , Figure 5 and Figure 6 can be manufactured, and a method of manufacturing the organic light emitting display device 100 can be provided.

[0140] In the method of manufacturing an organic light emitting display device according to one or more embodiments of the disclosure, because the protrusions of the organic pattern 454 and the contact pattern 135 are formed at the portion where the opening 215 of the glass substrate 105 is located, the thickness of the second inorganic thin film encapsulation layer 453 can not be reduced (e.g., can not become thinner) within the opening 215, and thus, the second inorganic thin film encapsulation layer 453 can not be excessively torn in the process of peeling the substrate 110 from the glass substrate 105. Accordingly, defects of the organic light emitting display device can be reduced.

[0141] Further, because the protrusions of the contact pattern 135 are formed in the opening 215, the area in which the first inorganic thin film encapsulation layer 451 contacts (e.g., is in contact with) the glass substrate 105 can be relatively reduced, and the first inorganic thin film encapsulation layer 451 can be easily peeled from the glass substrate 105 in the peeling process.

[0142] Embodiments of the disclosure can be applied to various suitable electronic devices having an organic light emitting display device. For example, one or more embodiments of the disclosure can be applied to various suitable electronic devices such as a vehicle display device, a ship display device, an aircraft display device, a portable communication device, a display device for display or for information transmission, and a medical display device, etc.

[0143] While certain embodiments have been described, these persons skilled in the art will readily appreciate that various modifications are possible in the embodiments without materially departing from the novel teachings and advantages of the disclosure. Accordingly, all such modifications are intended to be included within the scope of the disclosure as defined in the appended claims. In the claims, means-plus-function clauses are used where functionally equivalent structures are indistinguishable to those skilled in the art because of the functional interchangeability of such structures, and also to invoke prior art. The recitation of needed means-for- function clauses of the appended claims are not intended as admissions that the claims or the exclusive privilege of the inventor or inventors in presenting the disclosure.

Claims

1. An organic light emitting display apparatus comprising: a substrate comprising: pixel areas; connection areas between adjacent ones of the pixel areas, respectively; and areas with a via, the areas with the via being defined by the adjacent pixel areas and the connection areas between the adjacent pixel areas, respectively; a sub-pixel structure on the substrate at each of the pixel areas; a thin film encapsulation structure on the sub-pixel structure, the thin film encapsulation structure comprising a first inorganic thin film encapsulation layer on the sub-pixel structure and a second inorganic thin film encapsulation layer on the first inorganic thin film encapsulation layer; and an organic pattern on a sidewall of the substrate, the sidewall being adjacent to the via, wherein the second inorganic thin film encapsulation layer covers the organic pattern and one side surface of the organic pattern is exposed.

2. The organic light emitting display device according to claim 1, wherein, In a plan view of the organic light emitting display apparatus, the organic pattern extends along an outermost periphery of the areas defined by the adjacent pixel areas and the connection areas between the adjacent pixel areas, respectively.

3. The organic light emitting display device according to claim 1 or 2, wherein, The thin film encapsulation structure further comprises: an organic thin film encapsulation layer between the first inorganic thin film encapsulation layer and the second inorganic thin film encapsulation layer.

4. The organic light emitting display device according to claim 3, wherein, The organic pattern and the organic thin film encapsulation layer comprise a same material as each other.

5. The organic light emitting display device according to claim 3, wherein, The organic pattern contacts the first inorganic thin film encapsulation layer and the second inorganic thin film encapsulation layer.

6. The organic light emitting display device according to claim 3, wherein, The first inorganic thin film encapsulation layer extends in a direction from the sub-pixel structure to the via, and between the sidewall of the substrate adjacent to the via and the organic pattern, The second inorganic thin film encapsulation layer extends in the direction, and on the first inorganic thin film encapsulation layer located on the sidewall of the substrate, and wherein the second inorganic thin film encapsulation layer contacts the organic pattern on the sidewall of the substrate.

7. The organic light emitting display device according to claim 3, wherein, The first inorganic thin film encapsulation layer comprises a protrusion protruding from a portion of the first inorganic thin film encapsulation layer adjacent to a bottom surface of the substrate in a direction from the sidewall of the substrate to the via. 8.The organic light emitting display apparatus of claim 3, further comprising: a gate insulating layer on the substrate; an interlayer insulating layer on the gate insulating layer; and a planarization layer on the interlayer insulating layer, wherein a sidewall of each of the gate insulating layer, the interlayer insulating layer, and the planarization layer adjacent to the via contacts the first inorganic thin film encapsulation layer.

9. The organic light emitting display device according to claim 1, wherein, The substrate has an island shape at each of the pixel areas, and the substrate has a bar shape at each of the connection areas, wherein the connection areas comprise: a first connection area extending in a first direction; and a second connection area extending in a second direction orthogonal to the first direction, and wherein one side of one of the pixel areas contacts the first connection area, and an adjacent side of the one of the pixel areas contacts the second connection area.

10. The organic light emitting display device according to claim 1, wherein, The substrate has an island shape at each of the pixel areas, and The substrate has a U-shape, an S-shape, or a W-shape at each of the connection regions.

11. The organic light emitting display device according to claim 1, wherein, The substrate is stretchable at each of the connection regions.

12. The organic light emitting display device according to claim 1, wherein, The substrate includes a mesh structure having a plurality of through-holes, and One of the plurality of through-holes is defined by the substrate at at least three adjacent pixel regions among the pixel regions and at least three connection regions among the connection regions configured to connect the at least three adjacent pixel regions to each other.

Citation Information

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