Light-emitting device, template thereof, and preparation method thereof

Abstract

A light-emitting device, a template of the light-emitting device, and a preparation method thereof. By disposing a GaN-based semiconductor layer (2) and a mask layer (3) on a substrate (1), wherein the mask layer (3) includes a plurality of mask openings arranged at intervals, and the mask openings are filled with the GaN-based semiconductor layer (2); and a sacrificial layer (4) is disposed on the surface of the GaN-based semiconductor layer (2) within the plurality of mask openings arranged at intervals. By using the mask openings arranged at intervals, spaced-apart light-emitting units (5) can be directly formed on the mask openings, avoiding sidewall etching, improving the light-emitting efficiency of the light-emitting device, and the light-emitting device is peeled off by etching the sacrificial layer (4) to realize the reuse of the template and reduce the cost.

Description

Technical Field

[0001] The present invention relates to the field of light-emitting diode devices, and particularly to a light-emitting device, a template for a light-emitting device, and a preparation method thereof. Background Art

[0002] Traditional display technologies are LCD and OLED. However, LCD has low efficiency, and OLED has problems with lifespan and reliability. Micro-LED is the miniaturization and matrix technology of LED. An LED array with high density and tiny size is integrated on a single chip, making its volume about 1% of the current mainstream LED size.

[0003] Micro-LED inherits the characteristics of LED such as high efficiency, high brightness, high reliability, and fast response time, and its power consumption is only 10% of that of LCD. The color saturation is close to that of OLED, and it is regarded as the perfect application of the new generation display technology. Compared with OLED, which is also a self-luminous display, Micro-LED has a brightness 30 times higher, a resolution of up to 1500 PPI, and its color is easier to adjust, and it has a longer service life.

[0004] The production and preparation chain of Micro-LED is simplified to epitaxial growth, chip processing, pixel transfer, detection and repair, full color, and driving. Currently, the low production yield and high manufacturing cost are the bottlenecks hindering the development of Micro-LED.

[0005] The main factors leading to low production yield are as follows:

[0006] 1. In terms of epitaxy: The small wafer size results in low transfer efficiency; large warpage affects subsequent chip processing; poor wavelength uniformity requires sorting of die chips, which is costly;

[0007] 2. Chip processing: Due to the small size of die chips, the non-radiative recombination on the sidewalls of light-emitting units caused by etching increases, resulting in low light-emitting efficiency;

[0008] 3. Pixel transfer: Using the traditional "pick" and "place" method to transfer die chips to the driving backplane has a long preparation time and does not meet the industrialization requirements;

[0009] 4. Detection and repair: There are many defective points, and the workload of detection and repair is large, resulting in high production costs.

[0010] 5. Full color: Using RGB three-color LEDs is costly. Summary of the Invention

[0011] In view of this, the embodiments of the present invention are committed to providing a light-emitting device, a template for a light-emitting device, and a corresponding preparation method, which solve the problems of high cost and low light-emitting efficiency in the process of preparing MicroLED.

[0012] According to one aspect of the present invention, a template for a light-emitting device provided by an embodiment of the present invention includes:

[0013] a substrate,

[0014] a GaN-based semiconductor layer and a mask layer disposed on the substrate, wherein the mask layer includes a plurality of mask openings spaced apart from each other, and the GaN-based semiconductor layer fills the mask openings;

[0015] and a sacrificial layer disposed on a surface of the GaN-based semiconductor layer away from the substrate side and within the plurality of spaced-apart mask openings.

[0016] In one embodiment, the sacrificial layer includes a plurality of hole structures.

[0017] In one embodiment, the GaN-based semiconductor layer is disposed between the substrate and the mask layer.

[0018] In one embodiment, a height of the sacrificial layer away from the substrate side is not higher than a height of the mask layer away from the substrate side.

[0019] In one embodiment, a width of the mask opening is not greater than 300 micrometers.

[0020] In one embodiment, a transverse cross-sectional shape of the mask opening includes any one or a combination of more than one of the following shapes: hexagon, circle, triangle, rhombus, rectangle.

[0021] According to another aspect of the present invention, a light-emitting device provided by an embodiment of the present invention includes:

[0022] a template for preparing the light-emitting unit;

[0023] a plurality of spaced-apart light-emitting units prepared on the template;

[0024] wherein the template includes the template for the light-emitting unit as described above, and each of the light-emitting units is formed on the mask opening.

[0025] In one embodiment, a minimum width of the light-emitting unit along the arrangement direction is not greater than 300 micrometers.

[0026] In one embodiment, a longitudinal cross-sectional shape of the light-emitting unit includes any one or a combination of more than one of the following shapes: rectangle, trapezoid, triangle.

[0027] According to another aspect of the present invention, a method for preparing a template for a light-emitting device provided by an embodiment of the present invention includes:

[0028] preparing a mask layer on a substrate, wherein the mask layer includes a plurality of mask openings spaced apart from each other;

[0029] Fabricate a GaN-based semiconductor layer within the mask opening to fill the mask opening;

[0030] And fabricate a sacrificial layer on the GaN-based semiconductor layer within the mask opening.

[0031] In one embodiment, fabricating the sacrificial layer on the GaN-based semiconductor layer within the mask opening includes: introducing a corrosive gas onto the GaN-based semiconductor layer within the mask opening to form the sacrificial layer.

[0032] In one embodiment, fabricating the sacrificial layer on the GaN-based semiconductor layer within the mask opening includes: etching the GaN-based semiconductor layer within the mask opening by in-situ silane to form a sacrificial layer with a hole structure.

[0033] In one embodiment, fabricating the sacrificial layer on the GaN-based semiconductor layer within the mask opening includes: etching the GaN-based semiconductor layer by an electrochemical selective method to form a sacrificial layer with a hole structure.

[0034] In one embodiment, fabricating the sacrificial layer on the GaN-based semiconductor layer within the mask opening further includes: controlling the size and occupancy rate of the hole structure by adjusting the doping concentration of the GaN-based semiconductor layer.

[0035] According to another aspect of the present invention, a method for fabricating a light-emitting device provided by an embodiment of the present invention includes:

[0036] Fabricate a template;

[0037] And fabricate a plurality of spaced-apart light-emitting units on the mask layer and the sacrificial layer of the template, wherein each light-emitting unit is formed on the mask opening; wherein, the template is fabricated by using the fabrication method described in any one of the above.

[0038] In one embodiment, the light-emitting unit includes a first semiconductor layer, an active layer, a second semiconductor layer, an electrode, a mirror metal electrode, and an insulating layer.

[0039] In one embodiment, the method for fabricating the light-emitting device includes connecting the light-emitting unit to a temporary carrier through an electrode contact pad.

[0040] In one embodiment, after fabricating a plurality of spaced-apart light-emitting units on the mask layer and the sacrificial layer of the template, it further includes: peeling the light-emitting unit from the mask layer and the GaN-based semiconductor layer.

[0041] In one embodiment, the step of peeling the light-emitting unit from the mask layer and the GaN-based semiconductor layer includes: peeling the light-emitting unit from the mask layer and the GaN-based semiconductor layer by peeling the sacrificial layer.

[0042] A template for a light-emitting device provided by an embodiment of the present invention sequentially disposes a GaN-based semiconductor layer and a mask layer on a substrate. The mask layer includes a plurality of mask openings disposed at intervals, and the GaN-based semiconductor layer is used to fill the mask openings; and a sacrificial layer is disposed on the surface of the GaN-based semiconductor layer within the plurality of mask openings disposed at intervals. By using the mask openings disposed at intervals, a plurality of spaced-apart light-emitting units can be directly formed on the template of the light-emitting device, avoiding sidewall etching and selective epitaxy, avoiding non-radiative recombination problems caused by etching, improving the light-emitting efficiency of the light-emitting device, and by using the sacrificial layer for etching and peeling, the template can be reused, reducing material waste. Description of the Drawings

[0043] Figure 1 The figure shows a schematic structural diagram of a template for a light-emitting device provided by an embodiment of the present application.

[0044] Figure 2 The figure shows a schematic structural diagram of a template for a light-emitting device provided by another embodiment of the present application.

[0045] Figure 3 The figure shows a schematic structural diagram of a template for a light-emitting device provided by another embodiment of the present application.

[0046] Figure 4 The figure shows a schematic structural diagram of a template for a light-emitting device provided by another embodiment of the present application.

[0047] Figure 5a The figure shows a top view schematic structural diagram of a template for a light-emitting device provided by an embodiment of the present application.

[0048] Figure 5b The figure shows a top view schematic structural diagram of a template for a light-emitting device provided by another embodiment of the present application.

[0049] Figure 6 The figure shows a top view schematic structural diagram of a template for a light-emitting device provided by another embodiment of the present application.

[0050] Figure 7 The figure shows a top view schematic structural diagram of a template for a light-emitting device provided by another embodiment of the present application.

[0051] Figure 8 The figure shows a schematic structural diagram of a light-emitting device provided by an embodiment of the present application.

[0052] Figure 9The figure shows a schematic structural diagram of a light-emitting device provided by another embodiment of the present application.

[0053] Figure 10 The figure shows a flowchart of a method for preparing a template of a light-emitting device provided by an embodiment of the present application.

[0054] Figure 11a The figure shows a schematic structural diagram during the preparation of a template of a light-emitting device provided by an embodiment of the present application.

[0055] Figure 11b The figure shows a schematic structural diagram during the preparation of a template of a light-emitting device provided by an embodiment of the present application.

[0056] Figure 11c The figure shows a schematic structural diagram during the preparation of a template of a light-emitting device provided by an embodiment of the present application.

[0057] Figure 12 The figure shows a flowchart of a method for preparing a light-emitting device provided by an embodiment of the present application.

[0058] Figure 13 The figure shows a schematic structural diagram of a light-emitting device provided by another embodiment of the present application.

[0059] Figure 14a The figure shows a schematic structural diagram during the preparation of a light-emitting device provided by an embodiment of the present application.

[0060] Figure 14b The figure shows a schematic structural diagram during the preparation of a light-emitting device provided by an embodiment of the present application.

[0061] Figure 14c The figure shows a schematic structural diagram during the preparation of a light-emitting device provided by an embodiment of the present application.

[0062] Figure 14d The figure shows a schematic structural diagram during the preparation of a light-emitting device provided by an embodiment of the present application.

[0063] Figure 14e The figure shows a schematic structural diagram during the preparation of a light-emitting device provided by an embodiment of the present application.

[0064] Figure 14f The figure shows a schematic structural diagram during the preparation of a light-emitting device provided by an embodiment of the present application.

[0065] Figure 15 The figure shows a flowchart of a method for preparing a light-emitting device provided by another embodiment of the present application.

[0066] Figure 16The following shows a schematic structural diagram of the light-emitting device and the template peeling of the present application.

[0067] Figure 17 The following shows a schematic structural diagram of the light-emitting device after peeling of the present application.

[0068] Figure 18 The following shows a schematic structural diagram of the reusable light-emitting device template after peeling of the light-emitting device of the present application.

[0069] Figure 19a - 19d The following shows the manufacturing process of a vertical light-emitting device.

[0070] Among them, 1 is a substrate, 2 is a GaN-based semiconductor layer, 3 is a mask layer, 4 is a sacrificial layer, 5 is a light-emitting unit, 51 is a first semiconductor layer, 52 is an active layer, 53 is a second semiconductor layer, 54 is an electrode, 55 is a mirror metal electrode, 56 is an insulating layer, 57 is an electrode contact pad, and 58 is a driving backplane. Detailed implementation manners

[0071] To make the objectives, technical means, and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below with reference to the accompanying drawings.

[0072] Figure 1 The following shows a schematic structural diagram of a template of a light-emitting device provided by an embodiment of the present application. As Figure 1 shown, the template of the light-emitting device includes:

[0073] Substrate 1;

[0074] A GaN-based semiconductor layer 2 and a mask layer 3 disposed on the substrate 1, wherein the mask layer 3 includes a plurality of mask openings disposed at intervals, and the GaN-based semiconductor layer 2 fills the mask openings;

[0075] And a sacrificial layer 4 is disposed on the surface of the GaN-based semiconductor layer 2 away from the substrate 1 and within a plurality of mask openings disposed at intervals.

[0076] By providing a template including the above structure, and then manufacturing a light-emitting device on the template, that is, manufacturing a light-emitting device on the surfaces of the mask layer 3 and the sacrificial layer 4. By using the mask openings disposed at intervals, a plurality of spaced light-emitting units can be directly formed, avoiding sidewall etching, improving the light-emitting efficiency of the light-emitting device, and by using the sacrificial layer for etching and peeling, the template can be reused, reducing material waste and cost.

[0077] Figure 2 The following shows a schematic structural diagram of a template of a light-emitting device provided by another embodiment of the present application. As Figure 2As shown, a GaN-based semiconductor layer 2 can be provided between the substrate 1 and the mask layer 3. By providing a GaN-based semiconductor layer between the substrate and the mask layer, and continuously growing a GaN-based material on the GaN-based semiconductor layer in the mask opening, a GaN-based semiconductor layer with better quality can be obtained to fill the mask opening.

[0078] Furthermore, the template of the light-emitting device further includes: a buffer layer provided between the substrate 1 and the GaN-based semiconductor layer 2.

[0079] In one embodiment, the height of the sacrificial layer 4 away from the substrate 1 is not higher than the height of the mask layer 3 away from the substrate 1 (as Figure 1 shown), which facilitates the subsequent peeling of the light-emitting template from the light-emitting device using the sacrificial layer 4.

[0080] Figure 3 The figure shows a schematic structural diagram of a template of a light-emitting device provided by another embodiment of the present application. As Figure 3 shown, the sacrificial layer 4 may include a plurality of hole structures. By providing a plurality of hole structures, the peeling process after fabricating the light-emitting device on the template is facilitated. At the same time, due to the existence of the hole structures, the surface of the light-emitting device in contact with the template after peeling will form a roughened surface, improving the light-emitting efficiency of the light-emitting device. It should be understood that in the embodiments of the present application, whether to provide hole structures on the sacrificial layer can be selected according to the actual application scenario, and the embodiments of the present application do not limit whether to provide hole structures on the sacrificial layer. It should be understood that in the embodiments of the present application, the sacrificial layer can also be set as other structures such as defect structures that can facilitate the peeling of the light-emitting device and can form a roughened layer on the surface of the light-emitting device.

[0081] In one embodiment, the diameter of the plurality of hole structures can be less than 500 nanometers. It should be understood that in the embodiments of the present application, the diameter size of the hole structures can be selected according to the actual application scenario, as long as the selected diameter size of the hole structures can facilitate the peeling of the light-emitting device and can form a roughened structure on the surface of the light-emitting device. The embodiments of the present application do not limit the specific diameter size of the hole structures.

[0082] In one embodiment, the sizes and shapes of the plurality of hole structures can be inconsistent (as Figure 4 shown). In one embodiment, the plurality of hole structures can be arranged in a single layer (as Figure 3 shown), or can be arranged in multiple layers (as Figure 4 shown). In one embodiment, the plurality of hole structures can be regularly arranged (as Figure 3 shown), or can be irregularly arranged (as Figure 4As shown). It should be understood that, in the embodiments of the present application, different sizes, shapes, and arrangement manners of the hole structure can be selected according to the actual application scenario, as long as the different sizes, shapes, and arrangement manners of the selected hole structure can facilitate the peeling of the light-emitting device and can form a roughened structure on the surface of the light-emitting device. The embodiments of the present application do not limit the specific sizes, shapes, and arrangement manners of the hole structure.

[0083] In one embodiment, the width of the mask opening may not be greater than 300 micrometers. According to the preparation requirements of the light-emitting device, the width of the mask opening can be adaptively set (such as Figure 1 d1 shown). According to the commonly used Micro-LED structures and sizes at present, the embodiments of the present application limit the width of the mask opening to not be greater than 300 micrometers. It should be understood that, in the embodiments of the present application, the width of the mask opening can be selected according to the actual application scenario, as long as the selected width of the mask opening can meet the size requirements for preparing the light-emitting device. The embodiments of the present application do not limit the specific width of the mask opening.

[0084] FIGS. 5, 6, and 7 respectively show a top view schematic diagram of a template structure of a light-emitting device provided by an embodiment of the present application. As shown in FIGS. 5, 6, and 7, the transverse (the direction perpendicular to the stacking direction) cross-sectional shape of the mask opening may include any one or a combination of the following shapes: hexagon, circle, and triangle, rhombus, rectangle. Specifically, Figure 5a 、 5b are respectively the top view schematic diagrams of a circle and a hexagon; Figure 6 is the top view schematic diagram of a rectangle; Figure 7 is the top view schematic diagram of a triangle. It should be understood that, in the embodiments of the present application, different shapes of the transverse cross-section of the mask opening can be selected according to the actual application scenario, as long as the selected shape of the transverse cross-section of the mask opening can meet the requirements for preparing the light-emitting device. The embodiments of the present application do not limit the specific shape of the transverse cross-section of the mask opening.

[0085] In one embodiment, the material of the mask layer 3 may include any one or a combination of the following two materials: silicon dioxide and silicon nitride. In the embodiments of the present application, the material of the mask layer 3 may only include silicon dioxide, may only include silicon nitride, or may also include both silicon dioxide and silicon nitride at the same time. It should be understood that, in the embodiments of the present application, different materials of the mask layer can be selected according to the actual application scenario, as long as the selected material of the mask layer can meet the requirements for preparing the light-emitting device. The embodiments of the present application do not limit the specific material of the mask layer.

[0086] Figure 8 Shown is a schematic diagram of the structure of a light-emitting device provided by an embodiment of the present application. As Figure 8As shown, the light-emitting device includes a template for preparing light-emitting units and a plurality of light-emitting units 5 arranged at intervals on the template; wherein, the template includes the template of the light-emitting unit in any one of the above, and each light-emitting unit 5 is formed on a mask opening. By preparing the light-emitting unit 5 on the template with the above structure, the structure of the above mask opening can be utilized to directly prepare the light-emitting unit 5 on the mask opening (including partial structures of the mask layer on both sides of the mask opening) and the surface of the sacrificial layer 4, and a plurality of light-emitting units 5 arranged at intervals can be directly formed, avoiding sidewall etching for forming a plurality of light-emitting units 5, thereby avoiding low luminous efficiency caused by serious non-radiative recombination; and by using the sacrificial layer 4, the light-emitting unit 5 can be better peeled off from the template, and the peeled template can be reused to continue forming a light-emitting device on the template, avoiding waste of materials and reducing costs.

[0087] It should be understood that in the embodiments of the light-emitting device of the present application, the template adopted can be the template structure described in any one of the above embodiments. Therefore, the light-emitting device in the embodiments of the present application can have all the technical features and technical effects in the embodiments with the above template structure.

[0088] In one embodiment, the minimum width of the light-emitting unit 5 in the arrangement direction may not be greater than 300 microns. Preferably, the minimum width of the light-emitting unit 5 in the arrangement direction may not be greater than 50 microns. According to the preparation requirements of the light-emitting device, the minimum width between the light-emitting units 5 (such as Figure 8 d2 shown) during the preparation of the light-emitting device can be adaptively set. According to the commonly used Micro LED structures and sizes at present, in the embodiments of the present application, the minimum width between adjacent light-emitting units 5 is limited to not be greater than 300 microns. It should be understood that in the embodiments of the present application, the minimum width between adjacent light-emitting units can be selected according to the actual application scenario, as long as the selected minimum width between the light-emitting units can meet the requirements of the light-emitting device. The specific value of the minimum width between the light-emitting units in the embodiments of the present application is not limited.

[0089] In one embodiment, the longitudinal (lamination direction) sectional shape of the light-emitting unit 5 may include any one or a combination of the following shapes: rectangular (such as Figure 8 shown), trapezoidal (such as Figure 9 shown), triangular. It should be understood that in the embodiments of the present application, different shapes of the longitudinal section of the light-emitting unit can be selected according to the actual application scenario, as long as the selected shape of the longitudinal section of the light-emitting unit can meet the requirements of the light-emitting device. The specific shape of the longitudinal section of the light-emitting unit in the embodiments of the present application is not limited.

[0090] Figure 10 The figure shows a flowchart of a method for preparing a template of a light-emitting device provided by an embodiment of the present application.

[0091] As Figure 10 shown, the method includes the following steps:

[0092] Step 110: Prepare a mask layer on a substrate, where the mask layer includes a plurality of mask openings arranged at intervals.

[0093] In one embodiment, the method for forming the mask openings may include: after preparing the mask layer, etching (such as wet etching) a plurality of spaced openings on the surface of the mask layer. Of course, in the embodiments of the present application, other methods may also be selected to form a plurality of mask openings arranged at intervals on the mask layer, and the embodiments of the present application do not limit the specific method for forming a plurality of mask openings arranged at intervals.

[0094] The substrate 1 may be a structure including a substrate obtained by preparation or directly obtained.

[0095] In one embodiment, a GaN-based semiconductor layer 2 may be prepared between the substrate 1 and the mask layer 3. In a further embodiment, a buffer layer may also be provided between the substrate 1 and the GaN-based semiconductor layer 2.

[0096] In this embodiment, the substrate 1 includes semiconductor materials, ceramic materials, polymer materials, preferably sapphire, silicon carbide, silicon, lithium niobate, silicon-on-insulator (SOI), gallium nitride, aluminum nitride. Further preferably, the substrate 1 is made of Si material. The Si substrate has a large size and high transfer efficiency. It can be understood that the present application does not limit the material for preparing the substrate 1.

[0097] Mask openings are arranged at intervals on the substrate 1 to form a mask layer 3 (as Figure 11a shown). By arranging the mask openings at intervals, it is possible to directly prepare spaced light-emitting units on the mask openings, avoiding the process of obtaining a plurality of light-emitting units by sidewall etching after generating the entire structure in the prior art, effectively improving the light-emitting efficiency of the light-emitting units, and the spacing distance between adjacent light-emitting units can be controlled by controlling the size of adjacent mask openings to meet different requirements of the light-emitting device.

[0098] In this embodiment, the material of the mask layer may include any one or a combination of two of the following materials: silicon dioxide and silicon nitride. It can be understood that the present application does not limit the material of the mask layer, as long as the mask layer and the sacrificial layer can be peeled off from the light-emitting device.

[0099] Step 120: Prepare a GaN-based semiconductor layer in the mask openings to fill the mask openings.

[0100] Prepare a GaN-based semiconductor layer in the mask openings (as Figure 11bAs shown, that is, using a GaN-based material to fill the mask opening. The so-called GaN-based material is a semiconductor material containing at least Ga atoms and N atoms, such as GaN, AlGaN, InGaN, AlInGaN, etc.

[0101] Step 130: Prepare a sacrificial layer on the GaN-based semiconductor layer within the mask opening (as Figure 11c shown).

[0102] Prepare a sacrificial layer 4 on the GaN-based semiconductor layer 2 within adjacent mask openings, that is, the sacrificial layer 4 is disposed on the GaN-based semiconductor layer 2 and within the mask opening. By preparing a light-emitting unit on the sacrificial layer 4 and the mask opening, the sacrificial layer 4 can be used to better achieve the peeling of the light-emitting unit from the template, and the peeled template can be reused, avoiding waste of materials and reducing costs.

[0103] In one embodiment, the specific implementation of preparing a sacrificial layer on the GaN-based semiconductor layer within the mask opening may include: introducing a corrosive gas onto the GaN-based semiconductor layer within the mask opening, or etching the GaN-based semiconductor layer within the mask opening by in-situ silane, or etching the GaN-based semiconductor layer by an electrochemical selective method to form a sacrificial layer.

[0104] Among them, forming a sacrificial layer with a hole structure on the surface of the GaN-based semiconductor layer can be achieved by introducing a corrosive gas onto the GaN-based semiconductor layer. The corrosive gas may include silane, disilane, hydrochloric acid, etc. It should be understood that other corrosive gases may also be selected in the embodiments of the present application to form a sacrificial layer with a hole structure on the surface of the GaN-based semiconductor layer.

[0105] Forming a sacrificial layer with a hole structure on the surface of the GaN-based semiconductor layer by any of the above methods, and the sacrificial layer can be used to better achieve the peeling of the light-emitting unit from the template. The peeled template can be reused, and the surface of the peeled light-emitting unit has a self-roughening effect, improving the light-emitting efficiency.

[0106] In one embodiment, the specific implementation of preparing a sacrificial layer on the GaN-based semiconductor layer within the mask opening may also include: preparing by an electrochemical method. By controlling the preparation conditions, such as adjusting the magnitude of the bias voltage or the doping concentration of the GaN-based semiconductor layer, the purpose of adjusting the hole size and density can be achieved.

[0107] It should be understood that the n-type GaN and the corresponding impurity silicon listed in the embodiments of the present application are only exemplary. The embodiments of the present application may select different concentration adjustment methods and corresponding doping impurities according to specific application scenarios. The embodiments of the present application do not limit the specific concentration adjustment methods and corresponding doping impurities.

[0108] Figure 12 The figure shows a flowchart of a method for manufacturing a light-emitting device provided by an embodiment of the present application. As Figure 12 shown, the method includes the following steps:

[0109] Step 210: Prepare a template. Among them, the template is prepared by using the preparation method of any one of the above.

[0110] The template is prepared by any one of the methods in the above embodiments. A sacrificial layer is prepared on the GaN-based semiconductor layer within the mask opening, that is, the sacrificial layer is disposed on the GaN-based semiconductor layer and within the mask opening. A light-emitting unit is prepared on the sacrificial layer and the mask opening. The sacrificial layer can be used to better realize the peeling of the light-emitting unit from the template, and the peeled template can be reused, avoiding waste of materials and reducing costs.

[0111] Step 220: Prepare a plurality of spaced-apart light-emitting units on the mask layer and the sacrificial layer of the template, where each light-emitting unit is formed on the mask opening.

[0112] A plurality of spaced-apart light-emitting units are prepared on the mask layer and the sacrificial layer of the already prepared template. By providing mutually spaced mask openings, mutually spaced light-emitting units can be directly prepared on the mask layer, avoiding the process of forming a plurality of light-emitting units by sidewall etching in the prior art, effectively improving the luminous efficiency of the light-emitting units, and the spacing distance between adjacent light-emitting units can be controlled by controlling adjacent mask openings to meet different requirements of the light-emitting device.

[0113] Figure 13 The figure shows a schematic structural diagram of a light-emitting device provided by another embodiment of the present application. As Figure 13 shown, the light-emitting unit 5 may include a first semiconductor layer 51, an active layer 52, a second semiconductor layer 53, an electrode 54, a mirror metal electrode 55, and an insulating layer 56. Among them, the first semiconductor layer 51 may be an n-type semiconductor, and the second semiconductor layer 53 is a p-type semiconductor; alternatively, the first semiconductor layer 51 is a p-type semiconductor, and the second semiconductor layer 53 is an n-type semiconductor.

[0114] In one embodiment, the preparation of the light-emitting unit may include the following process:

[0115] As Figure 14a shown, the first semiconductor layer 51 is prepared on the mask layer 3 and the sacrificial layer 4; the active layer 52 is formed on the first semiconductor layer 51; the second semiconductor layer 53 is formed on the active layer 52.

[0116] As Figure 14bAs shown, an etching groove is started from the side of the second semiconductor layer 53 away from the active layer 52. The groove penetrates through the second semiconductor layer 53 and the active layer 52 and stops at the first semiconductor layer 51 or partially penetrates the first semiconductor layer 51. Wherein, a photoresist is prepared on the surface of the second semiconductor layer 53 that does not need to be etched and on the mask layer 3 between the light-emitting units 5 to protect the semiconductor material covered by the photoresist.

[0117] As Figure 14c shown, after the etching is completed, the photoresist is removed and an insulating layer 56 is prepared on the sidewall of the groove and on the mask layer 3 between adjacent light-emitting units 5. And an electrode 54 is prepared in the groove. Wherein, the electrode 54 is electrically connected to the first semiconductor layer 51, and the electrode 54 is insulated from the second semiconductor layer 53 and the active layer 52.

[0118] As Figure 14d shown, a mirror metal electrode 55 is prepared on the second semiconductor layer 53. Wherein, the mirror metal electrode 55 is electrically connected to the second semiconductor layer 53, and there is an insulating layer between the mirror metal electrode 55 and the electrode 54 and the mask layer 3.

[0119] In this embodiment, the light-emitting device further includes that the light-emitting unit is connected to the temporary carrier through an electrode contact pad, and the temporary carrier includes a driving backplane, etc. Specifically, as Figure 14e shown, electrode contact pads 57 are prepared on the electrode 54 and on the mirror metal electrode 55, and an insulating layer material is continuously prepared at the position on the mirror metal electrode 55 where no electrode contact pad 57 is prepared and between adjacent electrode contact pads 57. In this embodiment, the electrode contact pads 57 are respectively arranged on the electrode 54 connected to the first semiconductor layer and on the mirror metal electrode 55 connected to the second semiconductor layer. The electrode 54 and the mirror metal electrode 55 are respectively connected to the temporary carrier through the electrode contact pads 57. The electrode contact pads 57 include a metal material such as silver, gold, copper, or aluminum or a multi-layer metal material combined with multiple metals.

[0120] As Figure 14f shown, a driving backplane 58 is arranged on the electrode contact pads 57, and finally a light-emitting device is formed.

[0121] Figure 15 The figure shows a flowchart of a method for manufacturing a light-emitting device provided by another embodiment of the present application. As Figure 15 shown, after step 220, the method may further include:

[0122] Step 230: Peel the light-emitting unit from the mask layer and the GaN-based semiconductor layer.

[0123] By setting a sacrificial layer and fabricating a light-emitting unit on the sacrificial layer and the GaN-based semiconductor layer, after the light-emitting unit is fabricated, the sacrificial layer can be used to better realize the peeling of the light-emitting unit from the GaN-based semiconductor layer, and the template after peeling can continue to form a light-emitting unit thereon for repeated use, avoiding material waste and reducing costs.

[0124] In one embodiment, as Figure 16 shown, the specific method of peeling the light-emitting unit from the mask layer and the GaN-based semiconductor layer may include: by peeling the sacrificial layer, peeling the light-emitting unit from the mask layer and the GaN-based semiconductor layer to obtain a light-emitting device as Figure 17 shown and a template of the light-emitting device as Figure 18 shown. The light-emitting unit can be peeled from the template by means of wet etching the sacrificial layer, etc., avoiding damage to the template by etching and realizing the repeated use of the template. The sacrificial layer can also make the surface of the formed light-emitting device roughened by itself, improving the light extraction efficiency. In one embodiment, when there is a residual insulating layer of the light-emitting unit on the template after peeling, the residual insulating layer of the light-emitting unit can be removed by etching and cleaning to realize the repeated use of the template.

[0125] In this embodiment, a horizontally structured light-emitting device is fabricated on the template of the light-emitting device. In other embodiments, it also includes fabricating a vertically structured light-emitting device on the template of the light-emitting device, specifically as Figure 19a - 19d shown, specifically:

[0126] As Figure 19a shown, a first semiconductor layer 51, an active layer 52, a second semiconductor layer 53, a mirror metal electrode 55, and an insulating layer 56 are sequentially formed on the mask layer 3 and the sacrificial layer 4 on the template of the light-emitting device; the mirror metal electrode 55 is connected to the driving backplane 58 through an electrode contact pad 57. In this embodiment, the electrode contact pad 57 connects the mirror metal electrode 55 to the driving backplane 58. In other embodiments, the electrode contact pad 57 connects the mirror metal electrode 55 to other temporary carriers, and as long as the carrier can realize the transfer of the light-emitting device, this case does not limit it.

[0127] As Figure 19b shown, peeling the above-mentioned light-emitting device from the template of the light-emitting device. In this embodiment, the above-mentioned light-emitting device and the template of the light-emitting device can be separated by means of wet etching the sacrificial layer, etc.

[0128] As Figure 19c shown, flipping the above-mentioned formed light-emitting device through the driving backplane 58.

[0129] As Figure 19dAs shown, an electrode 54 is prepared on the first semiconductor layer 51 of the inverted light-emitting device to form a vertical light-emitting device.

[0130] In the present invention, the template can be reused, avoiding waste of materials and reducing costs; the light-emitting unit adopts the method of selective epitaxy, avoiding the problem of non-radiative recombination caused by etching and improving the light-emitting efficiency; by using a temporary carrier, the overall transfer of the light-emitting device is realized, avoiding the transfer of individual light-emitting units and reducing the transfer cost; the manufacturing process of the light-emitting device is compact and includes redundant design, reducing the detection and repair costs; the structure of the light-emitting device is a microfacet structure, and the light-emitting unit can be set in multiple colors, effectively reducing the full-color manufacturing cost while achieving full-color design.

[0131] The above are only the preferred embodiments of the present invention and are not intended to limit the protection scope of the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A template for a light-emitting device, characterized in that, Comprising: A substrate, A GaN-based semiconductor layer and a mask layer disposed on the substrate, wherein the mask layer includes a plurality of mask openings disposed at intervals, and the GaN-based semiconductor layer fills the mask openings; And A sacrificial layer disposed on the surface of the GaN-based semiconductor layer away from the substrate side and located within the plurality of mask openings disposed at intervals. Wherein, the height of the sacrificial layer away from the substrate side is not higher than the height of the mask layer away from the substrate side, and the light-emitting device is formed on the sacrificial layer so that when the sacrificial layer is peeled off, the light-emitting device can be peeled off from the mask layer and the GaN-based semiconductor layer.

2. The template of the light-emitting device according to claim 1, characterized in that The sacrificial layer includes a plurality of hole structures.

3. The template of the light-emitting device according to claim 1, characterized in that, The GaN-based semiconductor layer is disposed between the substrate and the mask layer.

4. The template of the light-emitting device according to claim 1, characterized in that, The width of the mask opening is not greater than 300 microns.

5. The template of the light-emitting device according to claim 1, characterized in that, The transverse cross-sectional shape of the mask opening includes any one or a combination of the following shapes: hexagon, circle, triangle, rhombus, rectangle.

6. A light-emitting device, characterized in that, Comprising a template for preparing the light-emitting unit and a plurality of light-emitting units disposed at intervals prepared on the template; wherein, the template includes the template of the light-emitting unit according to any one of claims 1-5, and each of the light-emitting units is formed on the mask opening.

7. The light-emitting device according to claim 6, wherein The minimum width of the light-emitting unit in the arrangement direction is not greater than 300 microns.

8. The light-emitting device according to claim 6, characterized in that, The longitudinal cross-sectional shape of the light-emitting unit includes any one or a combination of the following shapes: rectangle, trapezoid, triangle.

9. A method for preparing a template of a light-emitting device, characterized in that, Comprising: Preparing a mask layer on the substrate, wherein the mask layer includes a plurality of mask openings disposed at intervals; Preparing a GaN-based semiconductor layer in the mask opening to fill the mask opening; And Preparing a sacrificial layer on the GaN-based semiconductor layer in the mask opening. Wherein, the height of the sacrificial layer away from the substrate side is not higher than the height of the mask layer away from the substrate side, and the light-emitting device is formed on the sacrificial layer so that when the sacrificial layer is peeled off, the light-emitting device can be peeled off from the mask layer and the GaN-based semiconductor layer.

10. The method for preparing a template of a light-emitting device according to claim 9, characterized in that, The step of preparing the sacrificial layer on the GaN-based semiconductor layer in the mask opening includes: Introducing a corrosive gas onto the GaN-based semiconductor layer in the mask opening to form the sacrificial layer.

11. The method for preparing a template of a light-emitting device according to claim 9, wherein, The step of preparing the sacrificial layer on the GaN-based semiconductor layer in the mask opening includes: Etching the GaN-based semiconductor layer in the mask opening by in-situ silane to form the sacrificial layer with hole structures.

12. The method for preparing a template of a light-emitting device according to claim 9, characterized in that, The step of preparing the sacrificial layer on the GaN-based semiconductor layer in the mask opening includes: Etching the GaN-based semiconductor layer by an electrochemical selective method to form the sacrificial layer with hole structures.

13. The method for preparing a template of a light-emitting device according to claim 12, wherein, The step of preparing the sacrificial layer on the GaN-based semiconductor layer in the mask opening further includes: Controlling the size and occupancy rate of the hole structures by adjusting the doping concentration of the GaN-based semiconductor layer.

14. A method for preparing a light-emitting device, characterized in that, Comprising: Preparing a template; And Preparing a plurality of light-emitting units disposed at intervals on the mask layer and the sacrificial layer of the template, wherein each of the light-emitting units is formed on the mask opening; Among them, the preparation template adopts the preparation method described in any one of the above-mentioned claims 9-13.

15. The method for manufacturing a light-emitting device according to claim 14, wherein, The light-emitting unit includes a first semiconductor layer, an active layer, a second semiconductor layer, an electrode, a mirror metal electrode, and an insulating layer.

16. The method for manufacturing a light-emitting device according to claim 14, wherein, Connect the light-emitting unit to the temporary carrier through the electrode contact pad.

17. The method for manufacturing a light-emitting device according to claim 14, wherein, After preparing a plurality of spaced light-emitting units on the mask layer and the sacrificial layer of the template, it further includes: Peel the light-emitting unit from the mask layer and the GaN-based semiconductor layer.

18. The manufacturing method of the light-emitting device according to claim 17, wherein, The peeling of the light-emitting unit from the mask layer and the GaN-based semiconductor layer includes: Peel the light-emitting unit from the mask layer and the GaN-based semiconductor layer by peeling the sacrificial layer.

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