Capacitor structure and method of manufacturing the same

Abstract

A capacitor structure includes a substrate, a plurality of pillar capacitors, and an oxide layer. The pillar capacitors are located on a top surface of the substrate and form a capacitor array. The oxide layer covers a top and sides of the capacitor array and portions of the substrate. The pillar capacitors extend in a first direction, and the top surface of the substrate extends in a second direction, wherein the first direction is perpendicular to the second direction. The oxide layer extends from the top of the capacitor array to the substrate in a third direction, and an angle is included between the first direction and the third direction. In this way, local stress is reduced to avoid unintended damage.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a capacitor structure and a method of manufacturing a capacitor structure. BACKGROUND

[0002] For a capacitor array, localized stress due to asymmetric container profiles is found to easily cause contact shorts. For a semiconductor structure having a capacitor array formed inside, the localized stress can damage the semiconductor structure and the capacitor array inside thereof.

[0003] Therefore, there is a need for a capacitor structure including a capacitor array and being low stress to improve such phenomenon. SUMMARY

[0004] One aspect of the present disclosure relates to a capacitor structure. A capacitor structure includes a substrate, a plurality of pillar capacitors, and an oxide layer. The plurality of pillar capacitors are located on a top surface of the substrate and form a capacitor array. The pillar capacitors extend along a first direction, the top surface of the substrate extends along a second direction, and the first direction is perpendicular to the second direction. The oxide layer covers a top portion and a side portion of the capacitor array. The oxide layer extends from the top portion of the capacitor array to the substrate along a third direction, and an angle between the first direction and the third direction is a degree.

[0005] In one or more embodiments, the capacitor structure further includes a first support layer and a second support layer. The first support layer and the second support layer connect the side portion of the pillar capacitors and cover the oxide layer. Each of the first support layer and the second support layer protrudes from the side portion of the capacitor array in the second direction. The first support layer is located between the second support layer and the top surface of the substrate, and the first support layer has an additional length relative to the second support layer in the second direction such that a length of the first support layer is greater than a length of the second support layer, and the oxide layer extends along the third direction.

[0006] In some embodiments, the second support layer is located on the top portion of the capacitor array.

[0007] In one or more embodiments, each of the pillar capacitors includes an insulating tube filled with a conductive material.

[0008] In some embodiments, the conductive material of the pillar capacitors is a thin film covering and connecting the insulating tube.

[0009] In some embodiments, the capacitor structure further includes a plurality of third support layers. The third support layers connect the side portion of the insulating tube. The thin film further covers the third support layers.

[0010] In one or more embodiments, a plurality of transistors are formed within the substrate. Each of the transistors has a contact exposed from the top surface of the substrate, and each of the pillar capacitors connects the contact of a corresponding one of the transistors.

[0011] In one or more embodiments, the capacitor structure further comprises a conductive layer. The conductive layer is between the capacitor array and the oxide layer and electrically connected to the pillar capacitors.

[0012] In some embodiments, the capacitor structure further comprises a third insulating material and a wire. The third insulating material covers the oxide layer and the capacitor array. The wire extends through the third insulating material in the first direction to the conductive layer.

[0013] One aspect of the present disclosure relates to a method of fabricating a capacitor structure. One method of fabricating a capacitor structure includes the following processes. A substrate and a container structure formed on the substrate are provided, where the container structure includes a first insulating material, a first support material, a second insulating material, and a second support material stacked in order from bottom to top, a plurality of insulating tubes formed in the container structure and extending in a first direction, the first direction being perpendicular to a second direction in which the substrate extends. The second support material is etched to form a second support layer connecting the insulating tubes. The second insulating material is anisotropically etched to form a second insulating layer protruding from the second support layer in the second direction. The first support material is etched along the second insulating layer to form a first support layer protruding from the second support layer in the second direction and connecting the insulating tubes. The second insulating layer and the first insulating material are removed to expose the substrate. A conductive material is filled in the insulating tubes to form a plurality of pillar capacitors to form a capacitor array, and an oxide layer is formed from a top of the capacitor array to the substrate, where the oxide layer is formed along the first support layer and the second support layer, such that the oxide layer extends along a third direction, the third direction having an angle relative to the first direction.

[0014] In one or more embodiments, a plurality of transistors are formed in the substrate and have a plurality of contacts exposed from a top surface of the substrate, and each of the exposed contacts is connected to a corresponding one of the pillar capacitors.

[0015] In one or more embodiments, the method of fabricating a capacitor structure further includes the following processes. Before the oxide layer is formed, a conductive layer electrically connected to the capacitor array is formed, and the oxide layer further covers the conductive layer.

[0016] In some embodiments, the method of fabricating a capacitor structure further includes the following processes. A third insulating material covering the oxide layer is formed.

[0017] In some embodiments, the method of fabricating a capacitor structure further includes the following processes. A top side of the third insulating material is planarized by a chemical mechanical planarization process.

[0018] In some embodiments, the method of fabricating a capacitor structure further includes the following processes. A wire extending from the top side of the third insulating material through the oxide layer to the conductive layer is formed.

[0019] In summary, the capacitor structure of the present application has a sloped oxide layer covering the capacitor array, thereby avoiding unintended damage by reducing local stress.

[0020] The above merely serves to explain the problems to be solved by the present application, technical means for solving the problems, and effects thereof, and specific details of the present application will be described below in the embodiments and related drawings. BRIEF DESCRIPTION OF DRAWINGS

[0021] The following drawings disclose one or more embodiments of the present application and together with the description, explain the principles of the present application. Wherever possible, the same reference numbers are used in the drawings and the following description to refer to the same or similar elements. These drawings comprise:

[0022] Figure 1 a partial cross-sectional view of a capacitor structure according to an embodiment of the present application;

[0023] Figure 2 a partial cross-sectional view of a capacitor structure according to an embodiment of the present application;

[0024] Figure 3 a flowchart of a method of manufacturing a capacitor structure according to an embodiment of the present application;

[0025] Figures 4A to 4H respectively illustrating different stages of a method of manufacturing a capacitor structure according to an embodiment of the present application; Figure 3 a cross-sectional view of the method at different stages; and

[0026] Figure 5 another cross-sectional view of a capacitor structure connecting wires. DETAILED DESCRIPTION

[0027] The following embodiments are described in conjunction with the drawings, but the provided embodiments are not intended to limit the scope of the present application, and the description of the structure and operation is not intended to limit the order of execution. Any structure recombined by elements, resulting in a device with equivalent effects, is within the scope of the present application. In addition, the drawings are for illustration purposes only and are not drawn to scale. For ease of understanding, the same elements or similar elements will be denoted by the same reference signs in the following description.

[0028] In addition, the words used in the specification and claims (terms), unless otherwise specifically noted, generally have their ordinary meanings in the field of the present application, in the context of the specification and in the context of the special context. Some of the words used to describe the present application will be discussed below or elsewhere in the specification to provide additional guidance to those skilled in the art in describing the present application.

[0029] In this document, terms such as "first," "second," etc., are used only to distinguish elements or methods of operation that have the same technical terminology, and are not intended to indicate order or limit the invention.

[0030] In addition, terms such as “include,” “including,” and “provide” are all open-ended restrictions in this article, meaning that they include but are not limited to.

[0031] Furthermore, in this document, unless otherwise specified in the text, “a” and “the” may refer to one or more. It will be further understood that the terms “comprising,” “including,” “having,” and similar words as used herein specify the features, regions, integers, steps, operations, elements, and / or components described herein, but do not exclude one or more other features, regions, integers, steps, operations, elements, components, and / or groups thereof described or additionally described herein.

[0032] Please refer to Figure 1 . Figure 1 A partial cross-sectional view of a capacitor structure 100 is shown according to an embodiment of the present invention. In this embodiment, the partial cross-sectional view shows the right half of the capacitor structure 100, and the capacitor structure 100 may be a symmetrical rectangular shape.

[0033] The capacitor structure 100 includes a substrate 110, a capacitor array 130 composed of multiple rod capacitors 132 arranged in parallel, a support layer 140 and a support layer 143 connecting the multiple rod capacitors 132, and an oxide layer 170 covering the capacitor array 130.

[0034] like Figure 1 As shown, the substrate 110 includes a plurality of exposed contacts 120 and contacts 125. Contacts 120 and 125 are exposed on the top surface of the substrate 110. In this embodiment, the exposed contacts 120 are respectively connected to transistors formed within the substrate 110, and the exposed contacts 125 are connected to other circuits formed within the substrate 110. A non-conductive nitride film 149 covers the exposed contacts 120 and 125.

[0035] Multiple pillar capacitors 132 are formed on the substrate 110 and are respectively connected to exposed contacts 120, wherein these contacts 120 are respectively connected to transistors formed inside the substrate 110. In this embodiment, each pillar capacitor 132 is formed by an insulating tube 135 and a conductive material 137 filling the insulating tube 135.

[0036] The column capacitors 132 are covered by a titanium nitride layer 150 to increase structural strength, and a poly-silicon layer 155 and a tungsten layer 160 are further covered on the titanium nitride layer 150. The titanium nitride layer 150, the poly-silicon layer 155, and the tungsten layer 160 are between the capacitor array 130 formed by the column capacitors 132 and an oxide layer 170. Insulating oxide material 173 and insulating oxide material 176 are further covered on the oxide layer 170, and wires 190 and 195 are connected to the capacitor array 130 formed by the column capacitors 132 through the insulating oxide material 173 and 176, respectively.

[0037] As Figure 1 illustrated, in the present embodiment, the first direction Dl is the direction in which the column capacitors 132 extend from the substrate 110, the second direction D2 is the direction in which the top surface of the substrate 110 extends, and the second direction D2 is perpendicular to the first direction Dl. In the present embodiment, the oxide layer 170 covering the top 130T and the side 130S of the capacitor array 130 extends along the first direction Dl, such that the symmetrical capacitor structure 100 can be rectangular.

[0038] However, each of the support layers 140 and 143 connecting the column capacitors 132 causes the oxide layer 170 to have a convex portion along the second direction D2. The convex portion of the oxide layer 170 causes an asymmetrical profile, which generates local stress in the oxide material 173 and 176, and the generated local stress causes unexpected damage in the oxide material 173 and 176, and the unexpected damage causes the wires 195 to be electrically connected to each other. Such electrical connection of the wires 195 can be considered as an unexpected short circuit of the capacitor structure 100.

[0039] Please refer to Figure 2 . Figure 2 A partial cross-sectional view of a capacitor structure 200 is illustrated according to an embodiment of the present application. In the present embodiment, Figure 2 a partial cross-sectional view of the right half of the capacitor structure 200 is illustrated, and the capacitor structure 200 can be a symmetrical trapezoid.

[0040] Similarly, the improved capacitor structure 200 includes a substrate 210, a plurality of parallel-arranged pillar capacitors 232, and an oxide layer 270. The plurality of pillar capacitors 232 are located on the top surface of the substrate 210 and form a capacitor array 230. Support layers 240, 243, and 246 connect the plurality of pillar capacitors 232 together to form the capacitor array 230. The oxide layer 270 covers the top 230T and sides 230S of the capacitor array 230. The pillar capacitors 232 extend along a first direction D1, and the top surface of the substrate 210 extends along a second direction D2, with the first direction D1 perpendicular to the second direction D2. The oxide layer 270 covers the capacitor array 230 formed by the pillar capacitors 232 and a portion of the top surface of the substrate 210.

[0041] like Figure 2 As shown, multiple transistors are formed within substrate 210. Each transistor has a contact 220 exposed from the top surface of substrate 210. Each pillar capacitor 232 is connected to a corresponding contact 220. The other exposed contacts 225 are connected to other circuits located inside substrate 210. The exposed contacts 220 and 225 are covered by a non-conductive nitride film 249.

[0042] In capacitor structure 200, each pillar capacitor 232 is also formed by an insulating tube 235 filled with conductive material 237. For example... Figure 2 As shown, conductive material 237 is a thin film covering and connecting multiple insulating tubes 235. Conductive material 237 covers support layers 240, 243, and 246. Titanium nitride layer 250, polysilicon layer 255, and tungsten layer 260 are conductive layers and sequentially cover the capacitor array 230 formed by pillar capacitors 232. Oxide layer 270 further covers titanium nitride layer 250, polysilicon layer 255, and tungsten layer 260. Oxide material 273 and oxide material 276 cover oxide layer 270 and contact 225, and wires 290 and 295 are respectively connected to capacitor array 230 and contact 225. Figure 2 As shown, wire 295 extends to contact 225 through insulating oxide material 173, insulating oxide material 176, and nitride film 249, respectively. Wire 290 passes through oxide materials 273 and 276 and oxide layer 270 to connect to tungsten layer 260. Tungsten layer 260 is a conductive layer that electrically connects to capacitor array 230 through polysilicon layer 255 and titanium nitride layer 250.

[0043] Figure 1 The capacitor structure 100 and Figure 2 The difference in capacitor structure 200 is that the oxide layer 270 extends from the top of capacitor array 230 to substrate 210 along a third direction D3 instead of the first direction D1. For example... Figure 2 As shown, the first direction D1 and the third direction D3 form an angle θ greater than zero.

[0044] The support layers 240, 243, and 246 connect the side of the pillar capacitors 232, and the support layers 240, 243, and 246 protrude from the side 230S of the capacitor array 230. In other words, each of the support layers 240, 243, and 246 has an edge protruding from the side 230S of the capacitor array 230. In the present embodiment, the support layers 240, 243, and 246 that connect the pillar capacitors 232 to form the capacitor array 230 have different lengths in the second direction D2. The support layers 243 and 246 are both located between the support layer 240 and the top surface of the substrate 210. As shown, the support layer 240 is located at the top 230T of the capacitor array 230. The support layer 243 is located below the support layer 240 and has an additional length L12 relative to the support layer 240 in the second direction D2. The support layer 246 is located below the support layer 243 and has an additional length L23 relative to the support layer 243 in the second direction D2. In other words, as previously mentioned, since the capacitor structure 200 is a symmetric trapezoid, in the second direction D2, the length of the support layer 243 is greater than the length of the support layer 240, and the length of the support layer 246 is greater than the length of the support layer 243. Figure 2

[0045] Since the oxide layer 270 is formed along the support layers 240, 243, and 246, the oxide layer 270 can extend along the third direction D3. The included angle θ is greater than zero, the included angle θ is formed between the first direction D1 and the third direction D3, and because the protruding portions generated by the support layers 240, 243, and 246 can be connected to each other to form a smooth inclined surface for the oxide layer 270 covering the side 230S of the capacitor array 230, the oxide layer 270 can have a smooth extension using the oxide layer 270. Such a smooth extension of the oxide layer 270 reduces the generation of local stress, thereby avoiding accidental short circuits caused by local stress.

[0046] Figure 3 A flowchart of a method 300 of manufacturing a capacitor structure according to an embodiment of the present application is shown. The method 300 includes processes 310 to 345. Figures 4A to 4H The cross-sectional views of the method 300 at different processes are shown. Figure 3 The cross-sectional views of the method 300 at different processes are shown.

[0047] It should be understood that, Figures 4A to 4H The cross-sectional views shown are only partial cross-sectional views. In the present embodiment, if viewed from a top view, the insulating tubes 235 are arranged in a two-dimensional array having a plurality of rows and columns. Figures 4A to 4H The cross-sectional views shown are only partial cross-sectional views of one row in the two-dimensional array. In other words, there are gaps between the insulating tubes 235.

[0048] Please refer to​Figure 3 With Figure 4A In process 310, a substrate 210 with a container structure is provided. The container structure is on the substrate 210 and has a plurality of insulating tubes 235 forming an interior thereof, which are used to form a plurality of pillar capacitors 232. As shown, the container structure on the substrate 210 includes, from bottom to top, an insulating material 247M, a support material 246M, an insulating material 244M, a support material 243M, an insulating material 241M, and a support material 240M. The support material 240M, the support material 243M, and the support material 246M support the plurality of insulating tubes 235 of the container structure. The substrate 210 includes a nitride film 249 to insulate exposed contacts 220. The plurality of insulating tubes 235 are formed within the container structure and extend along a first direction D1 that is perpendicular to a second direction D2, where the first direction D1 is a direction in which a top surface of the substrate 210 extends. Figure 4A

[0049] In this embodiment, the support material 240M, the support material 243M, and the support material 246M are nitride, and the insulating material 241M, the insulating material 244M, and the insulating material 247M are oxide. As shown, a nitride layer 284, two oxide layers 282, and an oxide layer 283 are further formed on the container structure. A hard mask 280 and an underlayer 281 are formed on the oxide layer 282 for etching. Figure 4A

[0050] Please refer to Figure 3 With Figure 4B In process 315, the support material 240M is etched to form a support layer 240 connecting the plurality of insulating tubes 235. The support layer 240 is on top of the plurality of insulating tubes 235 and protrudes from the sides of the group of insulating tubes 235.

[0051] In process 315, the hard mask 280 and the underlayer 281 are removed by an etching process. The hard mask 280 partially protects the oxide layer 283 and the nitride layer 284. The container structure below the hard mask 280 is generally retained. However, as shown, in some embodiments, some portions of the oxide layer 283 and the nitride layer 284 below the hard mask 280 can still be removed. Figure 4B

[0052] Please refer to Figure 3 With Figure 4C ​​​At 320, the insulating material 241M is etched anisotropically to form the insulating layer 241 protruding from the support layer 240. The oxide layer 283 and a portion of the insulating material 241M are removed. Through the anisotropic etching process, the insulating layer 241 formed from the insulating material 241M can have a slope from the edge of the support layer 240 to the top of the support material 243M.

[0053] Referring to Figure 3 with Figure 4D At 325, the support material 243M is etched along the protruding insulating layer 241 to form the support layer 243 protruding from the support layer 240 in the second direction D2. The support layer 243 connects the plurality of insulating tubes 235. The slope of the insulating layer 241 protects the reserved support layer 243. As shown in Figure 4D In some embodiments, a portion of the first support layer 240 can be removed. However, the first support layer 240 still has a portion protruding from the side of the edge insulating tube 235.

[0054] Referring to Figure 3 with Figure 4E At 330, the insulating material 244M is etched anisotropically to form the insulating layer 244 protruding from the support layer 243, similar to 320. Some of the insulating layer 241 can be further removed. The formed insulating layer 244 has a slope from the edge of the support layer 243 to the top of the support material 246M.

[0055] Referring to Figure 3 with Figure 4F At 335, the support material 246M is etched along the protruding insulating layer 244 to form the support layer 246 further protruding from the support layer 246 in the second direction D2, similar to 325. The nitride layer 284 is removed, and a portion of the insulating layer 244 can also be removed.

[0056] Referring to Figure 3 with Figure 4G At 340, all remaining insulating layers 241, 244 and the insulating material 247M are removed to expose the substrate 210. As shown in Figure 4G The support layer 240 and the support layer 243 have a length difference of the additional length L12, and the support layer 243 and the support layer 246 have a length difference of the additional length L23. In other words, the support layer 243 protrudes from the support layer 240, and the support layer 246 further protrudes from the support layer 243. The support layer 240, the support layer 243 and the support layer 246 are arranged in a trapezoidal shape, and the edges of the support layer 240, the support layer 243 and the support layer 246 are arranged along the third direction D3. The first direction D1 and the third direction D3 have an angle θ therebetween.

[0057] Referring to Figure 3 with Figure 4H In process 345, the conductive material 237 is filled in the plurality of insulating tubes 235 to form the plurality of pillar capacitors 232, and the oxide layer 270 is formed along the remaining support layer 240, the support layer 243 and the support layer 246 from the top of the plurality of pillar capacitors 232 to the substrate 210. In other words, the plurality of pillar capacitors 232 form the capacitor array 230, and the oxide layer 270 covers the top 230T and the side 230S of the capacitor array 230.

[0058] In the present embodiment, after the conductive material 237 is filled to form the plurality of pillar capacitors 232, the plurality of pillar capacitors 232 form the capacitor array 230, and the titanium nitride layer 250, the polysilicon layer 255, the tungsten layer 260 and the oxide layer 270 are sequentially formed to cover the capacitor array 230. The polysilicon layer 255 and the titanium nitride layer 250 are conductive materials used to enhance the structural strength. In addition, the titanium nitride layer 250, the polysilicon layer 255 and the oxide layer 270 are formed along the support layer 240, the support layer 243 and the support layer 246. Therefore, the oxide layer 270 extends along the third direction D3, which is an angle θ with respect to the first direction D1 in which the pillar capacitors 232 extend. As previously described, the oxide layer 270 has a smooth slope to cover the side 230S of the capacitor array 230, thereby reducing the local stress.

[0059] Through processes 310 to 345, the capacitor structure 200 as shown in Figure 4H is provided. In the present embodiment, the capacitor structure 200 is a symmetrical trapezoid. In the second direction D2, the length of the support layer 243 is greater than the length of the support layer 240, and the length of the support layer 246 is greater than the length of the support layer 243. The oxide layer 270 smoothly extends from the top 230T of the capacitor array 230 along the support layer 240, the support layer 243 and the support layer 246 (for example, along the third direction D3) to the substrate 210.

[0060] In Figure 4H , the oxide material 276 covering the oxide layer 270 is further formed. The oxide material 276 is an insulating material for insulating the capacitor array 230. Since the oxide layer 270 has a smooth slope, the local stress inside the oxide material 276 covering the oxide layer 270 is also reduced.

[0061] Figure 5 Another cross-sectional view of the capacitor structure 200 connecting the conductive lines 290 and 295 is shown. Figure 5 As another cross-sectional view of the capacitor structure 200, the capacitor structure 200 further connects the conductive lines 290. In addition, Figure 5 As Figure 2A partial cross-sectional view of the capacitor structure 100. A plurality of transistors are formed within the substrate 110, and the top surface of the substrate 110 has a plurality of exposed contacts 120. Each exposed contact 120 is connected to a corresponding one of the pillar capacitors 132 in the capacitor array 130.

[0062] In Figure 5 addition, an oxidation material 273 is formed on the oxidation material 276. The oxidation material 273 and the oxidation material 276 both cover the oxide layer 270 to insulate the capacitor array 230 and the exposed contacts 225. The conductive lines 290 extend from the top side of the oxidation material 273 through the oxide layer 270 to the conductive tungsten layer 260. The conductive lines 295 extend from the top side of the oxidation material 273 through the oxidation material 276 and the nitride film 249 to the exposed contacts 225. Due to the reduction of local stress within the oxidation material 276, unintended short circuits between the conductive lines 295 do not occur.

[0063] As Figure 5 shown, the top side of the oxidation material 273 is planarized. In this embodiment, the top side of the oxidation material 273 is planarized by a chemical mechanical planarization process.

[0064] In summary, the present application provides a capacitor structure and a method of fabricating the same. The capacitor structure includes a capacitor array formed by a plurality of pillar capacitors, and an oxide layer covering the capacitor array. The oxide layer can be formed along a support layer connecting the plurality of pillar capacitors, wherein the support layer is arranged in a trapezoidal shape. The formed oxide layer can extend smoothly, thereby reducing the total stress. As a result, unintended short circuits caused by stress pressure can be avoided.

[0065] While the application has been described by way of example with reference to specific embodiments, it is to be understood that various alternatives, modifications and equivalents can be used. It is the intention that the application be limited only by the claims that follow.

[0066] SYMBOL DESCRIPTION

[0067] 100: capacitor structure

[0068] 110: substrate

[0069] 120, 125: contact

[0070] 130: capacitor array

[0071] 130T: top portion

[0072] 130S: side portion

[0073] 132: pillar capacitor

[0074] 135: insulating tube

[0075] 137: conductive material

[0076] 140, 143: support layer

[0077] 149: nitride film

[0078] 150: titanium nitride layer

[0079] 155: polysilicon layer

[0080] 160: tungsten layer

[0081] 170: oxide layer

[0082] 173, 176: oxide material

[0083] 190, 195: wire

[0084] 200: capacitor structure

[0085] 210: substrate

[0086] 220, 225: contact

[0087] 230: capacitor array

[0088] 230T: top

[0089] 230S: side

[0090] 232: pillar capacitor

[0091] 235: insulating tube

[0092] 237: conductive material

[0093] 240, 243, 246: support layer

[0094] 240M, 243M, 246M: support material

[0095] 241, 244: insulating layer

[0096] 241M, 244M, 247M: insulating material

[0097] 249: nitride film

[0098] 250: titanium nitride layer

[0099] 255: polysilicon layer

[0100] 260: tungsten layer

[0101] 270: oxide layer

[0102] 273, 276: oxide material

[0103] 280: hard mask

[0104] 281: base layer

[0105] 282, 283: oxide layer

[0106] 284: nitride layer

[0107] 290, 295: wire

[0108] 300: method

[0109] 310-345: flow

[0110] D1, D2, D3: direction

[0111] L12, L23: extra length

[0112] θ: angle

Claims

1. A capacitive structure, characterized by, The method comprises: providing a substrate and a container structure formed on the substrate, wherein the container structure comprises a first insulating material, a first support material, a second insulating material, and a second support material stacked in sequence from bottom to top, and a plurality of insulating tubes formed in the container structure and extending along a first direction, the first direction being perpendicular to a second direction in which the substrate extends; etching the second support material to form second support layers connected to the insulating tubes; anisotropically etching the second insulating material to form second insulating layers protruding from the second support layers along the second direction; etching the first support material along the second insulating layers to form first support layers protruding from the second support layers along the second direction and connected to the insulating tubes; removing the second insulating layers and the first insulating material to expose the substrate; and 2. The capacitance structure of claim 1, wherein, filling the insulating tubes with a conductive material to form a plurality of pillar capacitors to form a capacitor array, and covering an oxide layer from a top of the capacitor array to the substrate, wherein the oxide layer is formed along the first support layers and the second support layers, such that the oxide layer extends along a third direction, the third direction being at an angle relative to the first direction.

3. The capacitance structure of claim 1, wherein, The second support layers are located at the top of the capacitor array.

4. The capacitance structure of claim 3, wherein, Each of the pillar capacitors comprises an insulating tube filled with a conductive material.

5. The capacitance structure of claim 4, wherein, The conductive material of the pillar capacitors is a thin film covering and connecting the insulating tubes.

6. The capacitance structure of claim 1, wherein, Further comprising a plurality of third support layers connected to the sides of the insulating tubes, wherein the thin films further cover the third support layers.

7. The capacitance structure of claim 1, wherein, A plurality of transistors are formed in the substrate, each transistor having a contact exposed from the top surface of the substrate, and each pillar capacitor is connected to the contact of a corresponding one of the transistors. Further comprising:

8. The capacitance structure of claim 7, wherein, a conductive layer located between the capacitor array and the oxide layer and electrically connected to the pillar capacitors. Further comprising: a third insulating material covering the oxide layer and the capacitor array; and a conductive wire extending through the third insulating material to the conductive layer along the first direction.

9. A method of fabricating a capacitive structure, characterized by, The method comprises: providing a substrate and a container structure formed on the substrate, wherein the container structure comprises a first insulating material, a first support material, a second insulating material, and a second support material stacked in sequence from bottom to top, and a plurality of insulating tubes formed in the container structure and extending along a first direction, the first direction being perpendicular to a second direction in which the substrate extends; etching the second support material to form second support layers connected to the insulating tubes; anisotropically etching the second insulating material to form second insulating layers protruding from the second support layers along the second direction; etching the first support material along the second insulating layers to form first support layers protruding from the second support layers along the second direction and connected to the insulating tubes; removing the second insulating layers and the first insulating material to expose the substrate; and filling the insulating tubes with a conductive material to form a plurality of pillar capacitors to form a capacitor array, and covering an oxide layer from a top of the capacitor array to the substrate, wherein the oxide layer is formed along the first support layers and the second support layers, such that the oxide layer extends along a third direction, the third direction being at an angle relative to the first direction. ​ 10. The method of claim 9, wherein, A plurality of transistors are formed in the substrate and have a plurality of contacts exposed from a top surface of the substrate, and each of the exposed contacts is connected to a corresponding one of the pillar capacitors.

11. The method of claim 9, wherein, Further comprising: forming a conductive layer electrically connected to the array of capacitors before the oxide layer is formed, and the oxide layer further covers the conductive layer.

12. The method of claim 11, wherein, Further comprising: forming a third insulating material covering the oxide layer.

13. The method of claim 12, wherein, Further comprising: planarizing a top side of the third insulating material by a chemical mechanical planarization process.

14. The method of claim 12, wherein, Further comprising: forming a conductive line extending from the top side of the third insulating material through the oxide layer to the conductive layer.

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