Stage, and temperature control method of substrate

Abstract

The stage includes: a shaft; a first support plate on the shaft; a heater configured in a groove formed in the first support plate; and a gas supply pipe configured in the shaft and configured to blow a gas to the first support plate. The first support plate can have a disc shape, and a cross section of the gas supply pipe parallel to a surface of the first support plate can overlap with a center of the disc shape. The first support plate can be configured to block the gas and not discharge the gas into a chamber in which the stage is configured.

Description

TECHNICAL FIELD

[0001] Embodiments of the present application relate to a stage for supporting a substrate, a film forming apparatus or film processing apparatus having the stage, and a method for controlling the temperature of a substrate. BACKGROUND

[0002] Semiconductor devices are mounted on almost all electronic devices and play an important role in the functions of electronic devices. Semiconductor devices are devices that utilize the semiconductor properties of silicon or the like and are configured by laminating various patterned semiconductor films, insulating films, and conductive films on a substrate. These films are formed using an evaporation method, a sputtering method, a chemical vapor deposition (CVD) method, or a chemical reaction of a substrate, and are processed (patterned) by a photolithography process.

[0003] The properties of the above-described films depend greatly on the conditions at the time of forming the films or at the time of patterning. One of them is the temperature of the substrate. In many cases, in order to maintain a uniform temperature throughout the substrate, the temperature of a stage (hereinafter referred to as a stage) on which the substrate is placed is controlled to be as uniform as possible. The temperature control of the stage is performed by flowing a refrigerant through a flow path for the refrigerant provided in the stage while heating a heater provided in the stage (see Patent Documents 1 and 2).

[0004] (Prior Art Documents)

[0005] (Patent Documents)

[0006] Patent Document 1: Japanese Patent Application Publication No. 2018-056333

[0007] Patent Document 2: Japanese Patent Application Publication No. 2014-175491 SUMMARY

[0008] (Problems to be Solved by the Invention)

[0009] One of the objects of embodiments of the present application is to provide a stage for precisely controlling the temperature of a substrate. Alternatively, one of the objects of embodiments of the present application is to provide a film forming apparatus or film processing apparatus having the stage. Alternatively, one of the objects of embodiments of the present application is to provide a method for precisely controlling the temperature of a substrate.

[0010] (Means for Solving the Problems)

[0011] One of the embodiments of the present application is a stage. The stage includes a shaft, a first support plate on the shaft, a heater disposed in a groove formed in the first support plate, and a gas supply pipe configured to be disposed in the shaft and to blow a gas toward the first support plate.

[0012] One of the embodiments of the present application is a method of controlling a temperature of a substrate. The method includes: a step of arranging a substrate on a stage having a first support plate and a shaft under the first support plate; a step of heating the first stage using a heater arranged in a groove formed in the first support plate; and a step of blowing a gas from a gas supply pipe arranged in the shaft to the first support plate. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 A cross-sectional view of a film processing apparatus according to an embodiment of the present application is schematically shown.

[0014] Figure 2A A perspective view of a stage according to an embodiment of the present application is schematically shown.

[0015] Figure 2B A plan view of a stage according to an embodiment of the present application is schematically shown.

[0016] Figure 3A A cross-sectional view of a stage according to an embodiment of the present application is schematically shown.

[0017] Figure 3B A cross-sectional view of a stage according to an embodiment of the present application is schematically shown.

[0018] Figure 4A A cross-sectional view of a stage according to an embodiment of the present application is schematically shown.

[0019] Figure 4B A cross-sectional view of a stage according to an embodiment of the present application is schematically shown.

[0020] Figure 5A A perspective view of a gas supply pipe of a stage according to an embodiment of the present application is schematically shown.

[0021] Figure 5B A cross-sectional view of a gas supply pipe of a stage according to an embodiment of the present application is schematically shown.

[0022] Figure 6 A conceptual view showing a temperature distribution of a stage according to an embodiment of the present application is schematically shown.

[0023] Figure 7A A cross-sectional view of a stage according to an embodiment of the present application is schematically shown.

[0024] Figure 7B A cross-sectional view of a stage according to an embodiment of the present application is schematically shown.

[0025] Figure 7C A cross-sectional view of a stage according to an embodiment of the present application is schematically shown.

[0026] Figure 8A cross-sectional view of a film forming apparatus schematically showing an embodiment of the present application.

[0027] Figure 9 A cross-sectional view of a film forming apparatus schematically showing an embodiment of the present application.

[0028] Figure 10 A cross-sectional view of a film forming apparatus schematically showing an embodiment of the present application.

[0029] Figure 11 A plan view of a stage schematically showing an embodiment of the present application.

[0030] Figure 12A A temperature distribution of a first support plate in an example is shown.

[0031] Figure 12B A temperature distribution of a first support plate in a comparative example is shown. DETAILED DESCRIPTION

[0032] Hereinafter, each embodiment of the application disclosed in the present application will be described with reference to the accompanying drawings. However, the present application can be implemented in various ways without departing from the gist thereof, and should not be construed as being limited to the description of the embodiments shown below.

[0033] In order to describe the present application more clearly, the drawings show cases where the width, thickness, shape, and the like of each component are schematically represented, but the drawings are merely one example, and do not limit the interpretation of the present application. Furthermore, in the present specification and each drawing, elements having the same function as that described in the existing drawings can be denoted by the same reference numeral, and repetitive description can be omitted.

[0034] In the specification and the drawings, the same reference numeral is used when a plurality of the same or similar structures are generally represented, and the same reference numeral is used when each of the plurality of structures is individually represented, and a hyphen and a natural number are further used.

[0035] (First Embodiment)

[0036] In the present embodiment, a stage 100, which is one of the embodiments of the present application, and an etching apparatus 200, which is a film processing apparatus provided with the stage 100, are described.

[0037] 1. Etching apparatus

[0038] In Figure 1In the present embodiment, as an example of a film processing apparatus, a cross-sectional view of an etching apparatus 200 for dry etching various films is schematically shown. The etching apparatus 200 has a chamber 202 that provides a space for etching a film of a conductor, an insulator, a semiconductor, or the like formed on a substrate.

[0039] The chamber 202 is connected to an exhaust device 204, whereby the chamber 202 can be set to a reduced pressure environment. In the chamber 202, an introduction pipe 206 for introducing a reaction gas is also provided, and the reaction gas for etching is introduced into the chamber via a valve 208. As the reaction gas, a fluorine-containing organic compound such as carbon tetrafluoride (CF4), octafluorocyclobutane (c-C4F8), perfluorocyclopentane (c-C5F 10 ), hexafluorobutadiene (C4F6), or the like can be given.

[0040] A microwave source 212 can be provided in the upper portion of the chamber 202 via a waveguide 210. The microwave source 212 has an antenna or the like for supplying microwaves, and outputs high-frequency microwaves such as microwaves of 2.45 GHz, radio frequency waves (RF) of 13.56 MHz, or the like. The microwaves generated by the microwave source 212 are propagated to the upper portion of the chamber 202 by the waveguide 210, and are introduced into the inside of the chamber 202 via a window 214 including quartz, ceramic, or the like. The reaction gas is plasma-ized under the action of the microwaves, and the etching of the film is performed by the electrons, ions, radicals included in the plasma.

[0041] In order to place a substrate, the stage 100 of the present embodiment is provided in the lower portion of the chamber 202. A substrate, not shown, is placed on the stage 100. The stage 100 is connected to a power source 220 that applies high-frequency power to the stage 100, and an electric field generated by the microwaves is formed in a direction perpendicular to the surface of the stage 100 and the surface of the substrate. A magnet 216 can also be provided in the upper portion and the side surface of the chamber 202. As the magnet 216, a permanent magnet or an electromagnet having an electromagnetic coil can be given. Under the action of the magnet 216, a magnetic field component parallel to the surface of the stage 100 and the substrate is generated, and due to cooperation with the electric field generated by the microwaves, the electrons in the plasma resonate under the Lorentz force and are bound to the surface of the stage 100 and the substrate. As a result, a high-density plasma can be generated on the surface of the substrate.

[0042] When the temperature of the substrate is controlled in the etching apparatus 200, as described later, a gas (also referred to as a cooling gas) is supplied in order to cool the center portion of the stage 100 while the sheath heater (described later) 124 provided on the stage 100 is used. Therefore, the etching apparatus 200 is provided with a heater power source 222 for controlling the sheath heater 124, a gas supply device 150. Although not shown, the gas supply device 150 can be connected to a cooling device for cooling the cooling gas supplied from the gas supply device 150. As an arbitrary structure, the stage 100 can also be connected to an electrostatic chuck power source 224 for fixing the substrate on the stage 100, a temperature controller 226 for controlling the temperature of a liquid that flows back inside the stage 100, a rotation control device (not shown) for rotating the stage 100. A mechanism for carrying the substrate can be provided inside the chamber 202. The mechanism is not limited, and for example, as shown in Figure 1 , a carrying robot 230 provided with a robot arm can be provided.

[0043] 1-2. Stage

[0044] Figure 2A A perspective view of the stage 100 of one of the embodiments is schematically shown. As shown in Figure 2A , the stage 100 is provided as a basic structure with a shaft 140, a first support plate 120 supported by the shaft 140 on the shaft 140, and a second support plate 110 on the first support plate. In Figure 1 A, the first support plate 120 and the second support plate 110 each have a circular disk shape with a circular upper surface, but the shapes are not limited, and the shapes can be shapes suitable for the substrate used. For example, the first support plate 120 and the second support plate 110 can have a rectangular parallelepiped shape with a quadrangular upper surface.

[0045] Figure 2B A plan view of the stage 100 is schematically shown. In Figure 2B , the second support plate 110 is not shown. The first support plate 120 is provided with one or more grooves (refer to Figure 3B ) 122 along the upper surface thereof, and the sheath heater 124 is provided in each groove 122. The sheath heater 124 is provided with a heater power source 222 (refer to Figure 1The heating wire (heater wire) is electrically connected, and the sheath heater 124 is heated by electricity from the heater power supply 222. The groove 122 is formed so that the entire first support plate 120 is uniformly heated by the sheath heater 124. The heat from the first support plate 120 is conducted to the second support plate 110, and the substrate disposed on the second support plate 110 is heated by this heat. Although not shown, it is also possible to provide a groove in the second support plate 110 and to house the sheath heater 124 in the groove 122 of the first support plate 120 and the groove of the second support plate 110. Alternatively, it is also possible to not provide a groove 122 in the first support plate 120, but to provide a groove in the second support plate 110 and to arrange the sheath heater 124 therein.

[0046] The first support plate 120 and the second support plate 110 comprise metals selected from those having a thermal conductivity of 10 W / mK or higher and 430 W / mK or lower. Using a metal with high thermal conductivity allows for efficient reception of the heat generated by the sheath heater 124. Furthermore, the metal has a thermal conductivity of 3 × 10⁻⁶ W / mK. -6 / K or higher and 25×10 -6 A thermal expansion coefficient below / K is desirable. Examples of metals that meet this characteristic include titanium, aluminum, and stainless steel. The metal contained in the second support plate 110 and the metal contained in the first support plate 120 can be the same or different. Depending on the specific circumstances, each metal can be selected such that the difference in thermal expansion coefficient between the metals contained in the first support plate 120 and the second support plate 110 is 250 × 10⁻⁶ K. -6 / K or less. As a result, deformation caused by thermal expansion can be suppressed, and a highly reliable stage 100 can be provided.

[0047] The second support plate 110 and the first support plate 120 are joined together. The joining of the first support plate 120 and the second support plate 110 can be achieved by welding, screw fixing, or brazing. Examples of brazing filler metals include alloys containing silver, copper, and zinc; alloys containing copper and zinc; copper, aluminum, and their alloys containing trace amounts of phosphorus; alloys containing titanium, copper, and nickel; alloys containing titanium, zirconium, and copper; and alloys containing titanium, zirconium, copper, and nickel.

[0048] exist Figure 3A , Figure 3B The middle shows along Figure 2B A schematic diagram of the cross-sections along lines A-A' and B-B'. (See diagram below.) Figure 3AAs shown, a gas supply pipe 142 connected to a gas supply device 150 is provided within the shaft 140. The gas supply pipe 142 has a hollow structure, configured such that cooling gas supplied from the gas supply device 150 flows inside the gas supply pipe 142 and is then supplied towards the first support plate 120. The material contained in the gas supply pipe 142 is not limited; metals such as iron, aluminum, and copper, alloys such as stainless steel and brass, or vinyl polymers such as vinyl chloride and polyethylene can be used as materials. As a vinyl polymer, fluoropolymers such as polytetrafluoroethylene can be used.

[0049] The cooling gas supplied through the gas supply pipe 142 is used to cool the central portion of the first support plate 120, making its temperature lower than that of the outer periphery. The gas supply pipe 142 is preferably configured such that its central axis passes through the center of the first support plate 120. Therefore, when the planar shape of the first support plate 120 is circular (i.e., when the first support plate 120 is disk-shaped), it is preferable that the gas supply pipe 142 is configured such that its central axis passes through the center of the circle. However, the configuration of the gas supply pipe 142 does not need to be so strictly limited, as long as the gas supply pipe 142 is configured such that the center of the first support plate 120 and its vicinity can be cooled. Therefore, for example, the gas supply pipe 142 may be configured such that its cross-section overlaps with the center of the first support plate 120, even if it is parallel to the upper surface of the first support plate 120.

[0050] The distance D between the front end of the gas supply pipe 142 and the first support plate 120 (refer to...) Figure 3A The distance D can be appropriately set considering factors such as the size of the first support plate 120, the supply volume of the cooling gas, and the temperature of the cooling gas. For example, it can be selected from a range of 1 mm to 30 mm, 5 mm to 20 mm, or 5 mm to 15 mm. By setting the distance D within the above range, the central portion of the first support plate 120 can be selectively cooled without widespread diffusion of the cooling gas flow before it contacts the first support plate 120. Simultaneously, it prevents a large temperature gradient from forming in the central portion.

[0051] It is preferable that the cooling gas is not released into the chamber 202. This is because the composition and pressure of the gas in the chamber 202 are altered by the cooling gas. Therefore, the shaft 140 and the first support plate 120 are preferably configured to prevent the cooling gas from leaking into the chamber 202. For example, the first support plate 120 is configured to not have through holes, at least in the area overlapping with the shaft 140, thus blocking the cooling gas. Furthermore, as... Figure 3A As shown, the etching apparatus 200 can be configured to provide one or more through holes 202a in the region of the chamber 202 overlapping with the shaft 140 to discharge cooling gas. With such a structure, as...Figure 3A As shown by the dashed line, the cooling gas supplied in the direction of the first support plate 120 can contact the center of the first support plate 120, and then change direction within the shaft 140 and be discharged to the outside of the chamber 202.

[0052] The cooling gas can be air, nitrogen, argon, or a mixture thereof, and its temperature can be room temperature, or appropriately selected within a range of -20°C to 30°C, 0°C to 25°C, or 10°C to 25°C. When a temperature other than room temperature is selected, a cooling device can be used to control the temperature of the cooling gas. The flow rate of the cooling gas can also be appropriately adjusted, and can be selected, for example, within a range of 10 L / min to 1000 L / min, 30 L / min to 500 L / min, or 30 L / min to 300 L / min.

[0053] As described above, a groove 122 is formed on the upper surface of the first support plate 120, and a sheath heater 124 is arranged along the groove 122. Figure 3B The structure of the sheathed heater 124 is not limited; it can be either a double-terminal sheathed heater with terminals at both ends or a single-terminal sheathed heater with two terminals on only one side. The heating wire of the sheathed heater 124 is connected to the wiring 126, which extends within the shaft 140 and is taken out to the outside via a through hole 202a provided in the chamber 202 to be connected to the heater power supply 222.

[0054] Alternatively, a gas discharge pipe 144 for controlling the discharge of cooling gas may be provided within the shaft 140. For example, such as Figure 4A As shown, one or more gas discharge pipes 144 are inserted into the shaft 140 through the through-hole 202a of the chamber 202. The position of the end of the gas discharge pipe 144 can be arbitrarily set, and the distance to the first support plate 120 can be the same as the distance D (refer to...). Figure 3A It can also be smaller or larger than the distance D. For example, Figure 4B As shown, the gas discharge pipe 144 can be configured along the inner wall of the shaft 140, or it can contact the gas supply pipe 142. Although not shown, a gas discharge device can be connected to the gas discharge pipe 144 to draw in cooling gas. By adopting such a structure, the airflow of the cooling gas can be controlled more precisely.

[0055] Alternatively, a gas supply / discharge pipe that combines the supply and discharge capabilities of cooling gas can also be used. For example, such as... Figure 5A , Figure 5BAs shown, instead of the gas supply pipe 142 and the gas discharge pipe 144, a gas supply / discharge pipe 146 can be used, which has a gas supply portion 142a connected to the gas supply device 150, and a gas discharge portion 144a disposed so as to surround the gas supply portion 142a and integrated with the gas supply portion 142a. In the gas supply / discharge pipe 146, the gas supply portion 142a and the gas discharge portion 144a are separated by a single partition wall. By using the gas supply / discharge pipe 146, the space inside the shaft 140 can be effectively utilized, as a result of which, the number of jacket heaters 124 that are independently controlled can be increased, which contributes to more precise control of the temperature of the stage 100.

[0056] With respect to a stage disposed in a conventional film processing apparatus or film forming apparatus, in order to uniformly heat the entire substrate disposed on the stage, the entire support plate is designed to have a uniform temperature. That is, as shown by straight line (c) in the conceptual diagram, Figure 6 the number of jacket heaters is determined, and disposed so that the temperature from the center portion to the outer peripheral portion of the support plate is the same. However, in a film processing apparatus or film forming apparatus, heat release from the outer peripheral portion of the stage cannot be ignored, and the heat escapes to, for example, a chamber 202, a mechanism for transporting a substrate such as a robot 230, a pin for vertically moving a substrate, a protection jig (not shown) disposed in the vicinity of the stage, and the like. As a result, even if the stage is designed to give the ideal temperature distribution represented by straight line (c) without heat escaping, the temperature of the peripheral portion of the stage decreases (dotted line (a)) and a temperature distribution is generated in the substrate. Figure 1

[0057] In contrast, in the stage 100 of one embodiment of the present application, the second support plate 110 is heated via the first support plate 120 by the action of the jacket heaters 124, while a gas for cooling is supplied to the center portion of the first support plate 120. As a result, as shown by dotted line (b), the temperature of the first support plate 120 and the second support plate 110 can be controlled so that the temperature of the center portion becomes lower than the temperature of the outer peripheral portion. By creating such a temperature distribution, a balance with the heat escaping from the outer peripheral portion of the first support plate 120 and the second support plate 110 is achieved, and the ideal temperature distribution represented by straight line (c), or a temperature distribution close thereto, can be realized. As a result, it is possible to process a film on the entire substrate while maintaining the substrate at a uniform temperature, or to create a film on the substrate.

[0058] 1-3 Modification

[0059] The structure of the stage 100 is not limited to the above-described structure, and various structures can be employed. For example, as shown in Figure 7A ​As shown, a channel (flow path) 128 for fluid recirculation can be provided on the lower surface of the first support plate 120. In this case, a third support plate 130 is provided on the stage 100 to cover the flow path 128, and cooling gas is blown onto the first support plate 120 through the third support plate 130. The third support plate 130 may also contain the metal used in the first support plate 120 and the second support plate 110. The third support plate 130 is fixed to the first support plate 120 by welding, screw fixing, or brazing. Although not shown, it is also possible to provide the flow path 128 on the third support plate 130 instead of the first support plate 120. The temperature is controlled by a temperature controller 226 (see...). Figure 1 The temperature of the substrate can be more precisely controlled by the fluid flowing through channel 128. The medium can be used in either the case of cooling the stage 100 or the case of heating. As a medium, liquid media such as water, alcohol (e.g., isopropanol, ethylene glycol), silicone oil, fluorine-based fluids (e.g., fluorocarbons) can be used.

[0060] Alternatively, one or more openings 132 for mounting temperature sensors can be provided on the first support plate 120 and the third support plate 130. Thermocouples or similar devices can be used as temperature sensors.

[0061] Or, such as Figure 7B As shown, one or more through holes 134 can also be provided, penetrating the first support plate 120, the second support plate 110, and the third support plate 130. A supply source of a gas with high thermal conductivity, such as helium, is connected to the through hole 134 via a gas inlet pipe 136. This allows the gas with high thermal conductivity to flow through the gap between the second support plate 110 and the substrate, thereby effectively transferring the heat energy of the sheath heater 124 to the substrate. Furthermore, the through hole 134 can be configured to overlap with the shaft 140, or, as shown... Figure 7B As shown, the through hole 134 can be provided in an area that does not overlap with the shaft 140. By providing that it does not overlap with the shaft 140, it is possible to prevent cooling gas from leaking from the through hole 134 and diffusing into the chamber 202, and to ensure ample space for arranging the wiring 126 and the gas supply pipe 142 within the shaft 140.

[0062] Or, such as Figure 7C As shown, an electrostatic chuck 160 can be disposed on the first support plate 120 as a mechanism for fixing the substrate onto the stage 100. The electrostatic chuck 160 may have a structure, for example, covering the electrostatic chuck power line 164 with an insulating film 162. From the electrostatic chuck power supply 224 (see reference...) Figure 1) high voltage (from several hundred V to several thousand V) is applied to the electrostatic chuck power line 164, whereby the substrate can be fixed under the action of the Coulomb force of the electric charge generated in the electrostatic chuck power line 164 and the electric charge generated in the back surface of the substrate and having a polarity opposite to that of the electric charge generated in the electrostatic chuck power line 164. As the insulator, ceramics such as alumina, aluminum nitride, boron nitride, etc. can be used. The insulating film 162 need not be completely insulating, but can have some degree of electrical conductivity (for example, a resistivity of the order of 10 9 Ω-cm to 10 12 Ω-cm). In this case, as to the film 162, a metal oxide such as titanium oxide, zirconium oxide, hafnium oxide, etc. is doped in the above-described ceramics. A rib 166 for determining the position of the substrate can also be provided at the periphery of the electrostatic chuck 160.

[0063] As described above, in the stage 100 of the present embodiment, the cooling gas is supplied from the gas supply pipe 142 arranged in the shaft 140 to the central portion of the first support plate 120, so that the temperature of the central portion of the first support plate 120 and the second support plate 110 becomes lower than the temperature of the outer peripheral portion. As a result, a good balance between the input of heat from the sheath heater 124 and the dissipation of heat from the outer peripheral portion is formed, the entire first support plate 120 and the second support plate 110 become uniform in temperature, and the temperature of the entire substrate is uniformly controlled.

[0064] (Second Embodiment)

[0065] In the present embodiment, various film forming apparatuses having the stage 100 described in the first embodiment are used, and the following description will be made. As to the structures common to the first embodiment, the description thereof will be omitted. Figure 8 to Figure 10

[0066] 1. CVD Apparatus

[0067] Figure 8 is a schematic view of a CVD apparatus 300 as one of the film forming apparatuses. The CVD apparatus 300 has a chamber 302, which provides a place where reaction gases are chemically reacted.

[0068] ​The chamber 302 is connected with an exhaust device 304 to reduce the pressure in the chamber 302. The chamber 302 is also provided with an introduction pipe 306 for introducing a reaction gas, so that a reaction gas for film formation is introduced into the chamber through a valve 308. As the reaction gas, various gases can be used depending on the film to be formed. The gas can be a liquid at ordinary temperature. For example, a thin film of silicon, silicon oxide, silicon nitride, etc. can be formed using silane, dichlorosilane, tetraethoxysilane, etc. Alternatively, a metal thin film of tungsten, aluminum, etc. can be formed using tungsten fluoride, trimethylaluminum, etc.

[0069] As with the etching device 200, a microwave source 312 can also be provided on the upper portion of the chamber 302 via a waveguide 310. Microwaves generated by the microwave source 312 are introduced into the inside of the chamber 302 via the waveguide 310. The reaction gas is plasma- ized under the action of the microwaves, and the chemical reaction of the gas is promoted using various active species contained in the plasma, and the product obtained by the chemical reaction is deposited on the substrate to form a thin film. As an optional structure, a magnet 344 for increasing the density of the plasma can be provided in the chamber 202. The stage 100 described in the first embodiment can be provided in the lower portion of the chamber 302, and the deposition of the thin film is performed with the substrate disposed on the stage 100. As with the etching device 200, a magnet 316, 318 can also be provided on the side surface of the chamber 302.

[0070] The stage 100 can also be connected with a power source 320 for supplying high-frequency power to the stage 100, a heater power source 322 for controlling the sheath heater 124, a power source 324 for the electrostatic chuck, and a temperature controller 326 for temperature-controlling the fluid that is circulated in the inside of the stage 100. As an optional structure, the CVD device 300 can also be provided with a rotation control device (not shown) for rotating the stage 100.

[0071] 2. Sputtering device

[0072] Figure 9 A schematic view of a sputtering device 400, which is one of film formation devices. The sputtering device 400 has a chamber 402, which provides a place for collision of high-speed ions with a target and deposition of target atoms generated at that time.

[0073] The chamber 402 is connected with an exhaust device 404 for reducing the pressure in the chamber 402. The chamber 402 is provided with an introduction pipe 406 and a valve 408 for introducing a sputtering gas such as argon into the chamber 402.

[0074] A target stage 410 that holds a target containing a material for film formation and functions as a cathode is provided in the lower portion of the chamber 402, and a target 412 is provided in the target stage 410. The target stage 410 is connected to a high-frequency power source 414, and plasma can be generated in the chamber 402 by the action of the high-frequency power source 414.

[0075] The object table 100 of the first embodiment can be provided in the upper portion of the chamber 402. In this case, film formation is performed in a state in which a substrate is provided under the object table 100. As with the etching apparatus 200 and the CVD apparatus 300, the object table 100 can also be connected to a power source 420 for supplying high-frequency power to the object table 100, a heater power source 422, a power source 424 for an electrostatic chuck, and a temperature controller 426. As an arbitrary structure, the sputtering apparatus 400 can also be provided with a rotation control device (not shown) for rotating the object table 100.

[0076] Argon ions accelerated by the action of plasma generated in the chamber 402 collide with the target 412, and atoms of the target 412 are ejected. The ejected atoms fly toward a substrate provided under the object table 100 during a period in which the baffle 416 is opened and are deposited.

[0077] In the present embodiment, a structure in which the object table 100 is installed in the upper portion of the chamber 402 and the target stage 410 is installed in the lower portion of the chamber 402 is shown, but the present embodiment is not limited to this structure, and the sputtering apparatus 400 can also be configured so that the target is positioned above the object table 100. Alternatively, the object table 100 can be provided so that the main surface of the substrate is arranged vertically with respect to the horizontal plane, and the target stage 410 can be provided so as to face the object table 100.

[0078] 3. Evaporation apparatus

[0079] Figure 10 A schematic view of an evaporation apparatus 500, which is one of film formation apparatuses, is shown. The evaporation apparatus 500 has a chamber 502 that provides a space for evaporating a material of an evaporation source 510 and depositing the evaporated material on a substrate.

[0080] The chamber 502 is connected to an exhaust device 504 for making the chamber 502 into a high vacuum. The chamber 502 can be provided with an introduction pipe 506 for restoring the chamber 502 to atmospheric pressure, and an inert gas such as nitrogen, argon, or the like is introduced into the chamber 502 via a valve 508.

[0081] The stage 100 described in the first embodiment can be provided in the upper portion of the chamber 502. Deposition of a material is performed in a state where a substrate is provided below the stage 100. The stage 100 can also be connected to the heater power source 522, the power source for the electrostatic chuck 524, and the temperature controller 526, as with the etching apparatus 200, the CVD apparatus 300, and the sputtering apparatus 400. As an arbitrary configuration, the evaporation apparatus 500 can also be connected to a rotation control apparatus 530 for rotating the stage 100. Although not illustrated, the stage 100 can also have a mask holder for fixing a metal mask between the substrate and the evaporation source 510. Thus, the metal mask can be disposed in the vicinity of the substrate so that the opening portion of the metal mask overlaps with the region where the material is deposited.

[0082] The evaporation source 510 is provided on the lower side of the chamber, and a material to be evaporated is filled in the evaporation source 510. The evaporation source 510 is provided with a heater for heating the material, and the heater is controlled by the control apparatus 512. The chamber 502 is made into a high vacuum using the exhaust apparatus 504, and the evaporation source 510 is heated to gasify the material, thereby starting evaporation. The shutter 514 is opened when the speed of evaporation becomes constant, thereby starting deposition of the material on the substrate.

[0083] As described above, the film formation apparatuses of the CVD apparatus 300, the sputtering apparatus 400, the evaporation apparatus 500, and the like of the present embodiment can have the stage 100 described in the first embodiment. Thus, the temperature of the substrate can be accurately controlled and the temperature of the substrate can be adjusted with good responsiveness, thereby facilitating control of the physical properties of the formed thin film.

[0084] (Embodiment)

[0085] In the present embodiment, the results of measuring the temperature characteristics of the stage 100 described in the first embodiment are described.

[0086] In the present embodiment, a stage 100 having an aluminum first support plate 120 and a second support plate 110 was used (refer to FIG. 1). As described above, the temperature of the stage 100 was measured using a thermocouple 130. Figure 2A ). As described above, the temperature of the stage 100 was measured using a thermocouple 130. Figure 11As shown, the first support plate 120 is provided with three jacket heaters (first jacket heater 124a, second jacket heater 124b, third jacket heater 124c (outer diameter 310 mm, capacity 1200 W, respectively)). The first jacket heater 124a is disposed so as to overlap the shaft 140 and to surround the area that will overlap the gas supply pipe 142 in multiple turns. The second jacket heater 124b is disposed in a roughly three-layered winding in a manner that surrounds the first jacket heater 124a. The third jacket heater 124c is disposed so as to be closest to the outer peripheral portion of the first support plate 120. The total thickness of the first support plate 120 and the second support plate 110 is 33 mm, and the diameters are 322 mm, respectively. Three thermocouples are provided in the first support plate 120 and the second support plate 110, and the three jacket heaters 124 are energized and heated. Each jacket heater 124 is heated by applying a current in a manner that uses a power source of 200 V, 10 A and warms up to a set temperature under PID control. Air at room temperature is used as the cooling gas, and is supplied to the central portion of the first support plate 120 at a flow rate of 100 L / min through the gas supply pipe 142.

[0087] A test piece (dummy wafer) was provided on the surface of the second support plate 110 and heated, and the temperature was measured at 17 points when the temperature reached a steady state. In Figure 12A a graph showing the temperature distribution based on the results is shown. As is clear from Figure 12A , the temperature of the central portion of the second support plate 110 is lower than that of the outer peripheral portion. Specifically, the temperature of the central portion A is 145.2°C, and the temperature of the outer peripheral portion B is 155°C, and the difference is 9.8°C.

[0088] In Figure 12B a graph showing the temperature distribution obtained by performing the same experiment without supplying the cooling gas is shown. As is clear from this graph, in the case where the cooling gas is not supplied, the temperature of the second support plate 110 is uniform overall, the temperature of the central portion A is 152.4°C, and the temperature of the outer peripheral portion B is 155°C, and the difference is 2.6°C.

[0089] As described above, in the stage 100 of one of the embodiments, by supplying the cooling gas, it is possible to set the temperature of the central portion of the first support plate 120, the second support plate 110 of the stage 100 to be lower than the temperature of the outer peripheral portion. In the case where the stage 100 is used in a film forming apparatus or a film processing apparatus, heat escapes from the outer peripheral portion, so it is possible to confirm that a desired temperature distribution is achieved by using the stage 100 of one of the embodiments, and it is possible to control the entire substrate to be at a uniform temperature.

[0090] As the embodiments of the present application, as long as the above various embodiments do not contradict each other, they can be appropriately combined and implemented. In addition, as long as the gist of the present application is possessed, the contents in which a person skilled in the art adds, deletes, or design changes appropriate structural elements based on the various embodiments are also included in the scope of the present application.

[0091] Furthermore, even if other effects different from the effects brought about by the above various embodiments are brought about, as long as the effects are obvious from the description of the present specification or can be easily predicted by a person skilled in the art, they should be naturally understood as the effects brought about by the present application.

[0092] (Explanation of reference numerals)

[0093] 100: stage, 110: second support plate, 120: first support plate, 122: groove, 124: sheath heater, 124a: first sheath heater, 124b: second sheath heater, 124c: third sheath heater, 126: wiring, 128: flow path, 130: third support plate, 132: opening, 134: through-hole, 136: gas introduction pipe, 140: shaft, 142: gas supply pipe, 142a: gas supply portion, 144a: gas discharge portion, 146: gas supply / discharge pipe, 150: gas supply device, 160: electrostatic chuck, 162: film, 164: electrostatic chuck power supply line, 166: rib, 200: etching device, 202a: through-hole, 204: exhaust device, 206: introduction pipe, 208: valve, 210: waveguide, 212: microwave source, 214: window, 216: magnet, 220: power supply, 222: heater power supply, 224: electrostatic chuck power supply, 226: temperature controller, 230: transport robot, 300: CVD device, 302: chamber, 304: exhaust device, 306: introduction pipe, 308: valve, 310: waveguide, 316: magnet, 318: magnet, 320: power supply, 322: heater power supply, 324: electrostatic chuck power supply, 326: temperature controller, 344: magnet, 400: sputtering device, 402: chamber, 404: exhaust device, 406: introduction pipe, 408: valve, 410: target stage, 412: target, 414: high-frequency power supply, 416: baffle, 420: power supply, 422: heater power supply, 424: electrostatic chuck power supply, 426: temperature controller, 500: evaporation device, 502: chamber, 504: exhaust device, 506: introduction pipe, 508: valve, 510: deposition source, 512: chamber, 514: baffle, 522: heater power supply, 524: electrostatic chuck power supply, 526: temperature controller, 528: rotation control device

Claims

1. An object table, characterized by comprising: a shaft; a first support plate provided on the shaft and including metal; a heater disposed in a groove formed in the first support plate; and a gas supply pipe disposed in the shaft at a position corresponding to the center of the first support plate and configured to blow air to the center of the first support plate to achieve a balance between a temperature drop of a central portion of the first support plate due to cooling by the air and a temperature drop of an outer peripheral portion of the first support plate due to heat release from the outer peripheral portion, a distance between a front end of the gas supply pipe and the first support plate is 1 mm or more and 30 mm or less.

2. The stage according to claim 1, wherein the first support plate has a disc shape, a cross section of the gas supply pipe parallel to a surface of the first support plate overlaps with a center of the disc shape.

3. The stage according to claim 1, wherein the first support plate is configured to block the air and not discharge the air into a chamber in which the stage is disposed.

4. The stage according to claim 1, wherein a second support plate is further included on the first support plate.

5. The stage according to claim 1, wherein a third support plate is further included under the first support plate, the first support plate has a flow path for circulating a fluid.

6. The stage according to claim 1, wherein the first support plate has a through hole that does not overlap with the shaft.

7. The stage of claim 1, wherein, further comprising: a plurality of gas discharge pipes surrounding the gas supply pipe.

8. A substrate temperature control method, characterized by, comprising the steps of: a step of disposing a substrate on a stage provided with a first support plate including metal and a shaft under the first support plate; a step of heating the substrate disposed on the stage using a heater disposed in a groove formed in the first support plate; and a step of blowing air to the center of the first support plate from a gas supply pipe disposed in the shaft at a position corresponding to the center of the first support plate to achieve a balance between a temperature drop of a central portion of the first support plate due to cooling by the air and a temperature drop of an outer peripheral portion of the first support plate due to heat release from the outer peripheral portion, a distance between a front end of the gas supply pipe and the first support plate is 1 mm or more and 30 mm or less.

9. The substrate temperature control method according to claim 8, wherein the first support plate has a disc shape, the blowing of the air is performed in a manner such that a temperature of the center of the first support plate becomes lower than a temperature of an outer peripheral portion of the first support plate.

10. The substrate temperature control method according to claim 8, wherein the first support plate has a disc shape, the gas supply pipe is disposed so that a cross section of the gas supply pipe parallel to a surface of the first support plate overlaps with a center of the disc shape.

11. The substrate temperature control method of claim 8, wherein, further comprising: a step of discharging the air to outside a chamber so that the air is not discharged into a chamber in which the stage is disposed.

12. The substrate temperature control method of claim 8, wherein, further comprising: causing a fluid to flow through a flow path formed in the first support plate.

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