Semiconductor die with sensor segments at edges

Abstract

Embodiments according to the present disclosure relate to semiconductor dies with a sensor section at an edge. A semiconductor die (100) is proposed, wherein the semiconductor die (100) has a microelectronic section (101) and a sensor section (103). The microelectronic section (101) has an integrated circuit (102). The sensor section (103) is adjacent to an edge (104) of the semiconductor die (100). A sensor is also proposed, which comprises such a semiconductor die (100).

Description

Technical Field

[0001] This invention relates to sensors and semiconductor dies used in manufacturing sensors. Background Technology

[0002] Modern sensors are increasingly being manufactured based on semiconductor dies that have microelectronic segments and sensor segments. Using established semiconductor process technologies, multiple functional units are fabricated by processing semiconductor wafers, whereby the processed semiconductor wafers are then diced into multiple semiconductor dies, which form the basis of individual sensors.

[0003] Integrating the sensor segment and microelectronic segment into a single semiconductor die enables a short signal path, thereby minimizing the impact of interference on the measurement signal. Furthermore, integration results in a particularly compact sensor and helps reduce sensor power consumption.

[0004] There is an increasing need for sensors that exhibit the smallest possible drift in sensor signal values ​​over long periods of use.

[0005] To meet this need, a semiconductor die and a sensor according to the present invention are proposed. Advantageous design solutions are provided in this invention. Summary of the Invention

[0006] A semiconductor die is proposed, comprising a microelectronics segment and a sensor segment. The microelectronics segment includes integrated circuits. The sensor segment is adjacent to the edge of the semiconductor die.

[0007] It has been recognized that placing the sensor segment at the edge of the semiconductor die results in improved sensor signal values ​​compared to placing the sensor segment at the center of the semiconductor die (where the sensor segment is surrounded by microelectronic segments).

[0008] The structure located in the sensor segment of a semiconductor die is typically fabricated together with the semiconductor structure of the microelectronic segment during the wafer's FEOL process ("front-end processing"). Here, the FEOL process is generally understood to be all processing steps performed before the first metallization layer used for electrically connecting the various semiconductor devices of the microelectronic segment.

[0009] The metallization and oxide layers added during BEOL ("back-end processing") often result in significant stature between the sensor section and the microelectronic section. This stature, also known as topography, has been found to negatively impact sensor performance. Because the sensor section is adjacent to the edge of the semiconductor die, this stature exists only in a small portion of the sensor section's periphery, thus reducing its impact on sensor accuracy compared to conventional sensors. Furthermore, arranging the sensor section at the edge of the semiconductor die simplifies cleaning the sensor section. Specifically, particles cannot accumulate in the sensor section as easily as they might in a sensor section completely surrounded by an elevated microelectronic section.

[0010] One design specifies that the sensor section has pressure sensor elements, particularly capacitive pressure sensor elements, and / or magnetic sensor elements, particularly Hall sensor elements, and / or accelerometer elements and / or ultrasonic transducer elements and / or acoustic transducer elements.

[0011] The advantageous arrangement of the sensor segment at the edge of the semiconductor die can be shown in all these elements.

[0012] Specifically, it can be specified that the sensor segment has a movable region. The movable region can particularly include a mechanically movable area. The movable region can, for example, be a diaphragm. Pressure and / or acceleration can be measured by means of the movable region.

[0013] In the microelectronics section of a semiconductor die, die contact surfaces can be provided. These contact surfaces can be configured to electrically connect the semiconductor die, and especially integrated circuits, to other devices. These contact surfaces can also be referred to as solder pads.

[0014] In this design, the die contact surface is positioned on the side of the microelectronics section away from the sensor section. This increases the distance between the bonding wires required for the electrical connection of the semiconductor die and the sensor section, minimizing the negative impact of the bonding wires on sensor performance.

[0015] The sensor section may, in particular, be without a metal interconnect layer. Specifically, the sensor section may be without the metal interconnect layer applied during the BEOL process of the microelectronic section. In particular, the sensor section may have virtually no bulges towards the edge of the semiconductor die, except for the transition to the microelectronic section.

[0016] A semiconductor die can have a rectangular shape in a top view, wherein the semiconductor die is divided by a plane into a microelectronics segment that is rectangular in the top view and a sensor segment that is rectangular in the top view. The sensor segment can extend along the entire side of the semiconductor die.

[0017] Furthermore, a sensor having the aforementioned semiconductor die is proposed. The sensor has a housing, wherein the housing has a mounting surface, contact terminals, and a housing contact surface electrically connected to the contact terminals. The sensor has bonding wires that electrically connect the die contact surface to the housing contact surface. The semiconductor die is mechanically connected to the mounting surface. In particular, the mechanical connection can be established using an adhesive.

[0018] In one sensor design, the sensor section of the semiconductor die is not wetted by adhesive.

[0019] The absence of a fixed mechanical connection between the sensor section and the mounting surface can reduce stress generated in the sensor section.

[0020] The sensor section of the semiconductor die can be covered with gel. The gel protects the sensor element located in the sensor section from harmful environmental conditions such as liquids and gases.

[0021] Another sensor design specifies that the die contact surface and / or bonding wire and / or housing contact surface are embedded in the package. This protects the die contact surface, bonding wire, and housing contact surface from harmful environmental influences. In particular, the package reduces the risk of bonding wires detaching from the die contact surface and / or housing contact surface due to mechanical action.

[0022] Specifically, the package can be manufactured using film-assisted casting (“film-assisted molding”, FAM). The proposed arrangement of the sensor segment adjacent to the edge of the semiconductor die enables packaging via film-assisted casting. Film-assisted casting as a packaging method enables sensors that offer significant advantages over conventional sensors in terms of reduced size.

[0023] On the side of the semiconductor die facing away from the mounting surface, a barrier can be provided to prevent the sensor section from being wetted by the encapsulation material. Specifically, the barrier can be provided to separate the encapsulation and the gel. In this way, the encapsulation material can be prevented from reaching the sensor section and adversely affecting the sensor element there.

[0024] One design of the sensor specifies that a barrier is provided on the side of the semiconductor die facing the mounting surface to prevent the sensor section from being wetted by the adhesive. Attached Figure Description

[0025] The proposed semiconductor die and the sensor built thereon will now be explained in more detail with reference to the accompanying drawings. Wherein:

[0026] Figure 1 A cross-sectional view of the semiconductor die is shown.

[0027] Figure 2 Shown from top view according to Figure 1 Semiconductor die;

[0028] Figure 3 The sensor is shown in cross-section;

[0029] Figure 4 The sensor is shown in cross-section;

[0030] Figure 5 The sensor is shown in a top view;

[0031] Figure 6 The sensor is shown in a top view;

[0032] Figure 7 This illustrates the method steps for manufacturing the sensor;

[0033] Figure 8 Further method steps for manufacturing the sensor are shown;

[0034] Figure 9 Shown in Figure 8 The sensor following the method steps shown in the diagram; and

[0035] Figure 10 The sensor is shown after another method step. Detailed Implementation

[0036] Figure 1The semiconductor die 100 shown has a microelectronics section 101 and a sensor section 103. The microelectronics section 101 and the sensor section are separated from each other by a plane 108. Multiple semiconductor devices, as indicated by transistors 102, are disposed in the microelectronics section 101. Amplifier circuits, analog-to-digital converters, logic components, ASICs, and FPGAs can be disposed in the microelectronics section, which can be used to evaluate sensor signals generated by sensor elements disposed in the sensor section. Here, the sensor section 103 is adjacent to the edge 104 of the semiconductor die 100. The sensor element disposed in the sensor section 103 has a diaphragm 105. The sensor element is located in a layer 121, which has been fabricated in the FEOL process. In particular, the sensor element is located in a layer fabricated together with the semiconductor device 102. Multiple metallization layers 107 are disposed above the semiconductor device 102, which electrically connect the semiconductor device 102 to other semiconductor devices. In addition, the metallization layer 107, also known as the interconnect layer, is connected to the semiconductor die contact surface 106.

[0037] The metallization layer 107 and the semiconductor die contact surface 106 are fabricated within the scope of the BEOL process. The additional layer fabricated during the BEOL process results in a step 122 between the sensor segment 103 and the microelectronic segment 101. Because the sensor segment 103 is adjacent to the edge 104 of the semiconductor die 100, this step 122 exists only on one side of the sensor segment 103, making its impact on the characteristics of the sensor element smaller compared to a conventional arrangement of sensor segments. Furthermore, impurity particles can less easily accumulate in the sensor segment 103.

[0038] Figure 2 Shown in top view Figure 1 The semiconductor die 100 shown is generally rectangular in shape in the top view. Plane 108 divides the semiconductor die 100 into a sensor section 103 and a microelectronics section 101. This plane is arranged such that both the sensor section 103 and the microelectronics section 101 have rectangular shapes in the top view.

[0039] Figure 3 Sensor 300 is shown. Sensor 300 includes a housing with a mounting surface 309 on which a semiconductor die is mounted by means of an adhesive 313. The housing has a housing contact surface 311. The semiconductor die contact surface 106 is electrically connected to the housing contact surface 311 by means of a bonding wire 312.

[0040] Semiconductor die contact surface 106, bonding wire 312 and housing contact surface 311 are arranged in package 315.

[0041] Optionally, the semiconductor die may include a barrier 316 to prevent the material of the package 315 from wetting the sensor section where the diaphragm 105 is located. To protect the sensor element, a gel 314 is provided in the sensor section, which also covers the diaphragm 105.

[0042] Figure 4 A sensor 400 similar to sensor 300 is shown. Unlike sensor 300, in sensor 400, adhesive 313 is not provided below the sensor section. More specifically, barrier 417 prevents mechanical connection between the sensor section and the mounting surface 309 when the semiconductor die is mounted on the mounting surface 309. In this way, the risk of mechanical stress being transmitted from the housing to the sensor section is reduced.

[0043] Figure 5 Another sensor 500 is shown in top view. The housing of sensor 500 has contact terminals 510 connected to housing contact surfaces 311. Bonding wires 312 establish an electrical connection between the housing contact surfaces 311 and the semiconductor die contact surfaces 106. The housing contact surfaces 311, bonding wires 312, and semiconductor die contact surfaces 106 are arranged within a package 315. The package 315 may be made, for example, of epoxy resin. The sensor segment of the semiconductor die 100 is covered with gel 314 to protect the sensor element of the sensor segment from environmental influences.

[0044] Figure 6 A top view shows a sensor 600, similar to sensor 500. Sensor 600 and... Figure 5 The sensor 500 shown differs in the orientation of the semiconductor die 100 within the housing. This selected orientation of the semiconductor die 100 allows for the connection of six housing contact surfaces 311 to six semiconductor die contact surfaces using six bonding wires 312.

[0045] Figure 7 The diagram illustrates the steps involved in manufacturing sensor 900 (see [link]). Figure 9 The semiconductor die, having a sensor section 703 and a microelectronics section 701, is mechanically connected to the mounting surface 709 of the housing (especially the lead frame). An electrical connection is established between the semiconductor die contact surface and the housing contact surface using bonding wires 712. The housing contact surface is electrically connected to contact terminals 710.

[0046] An upper mold 718 and a lower mold 719 are shown, with a housing 700 having a semiconductor die disposed between the upper mold and the lower mold. A membrane 720 is disposed between the housing 700 and the molds 718 and 719, respectively.

[0047] After joining the two half-molded parts 718 and 719 together, as follows Figure 8As shown, membrane 720 seals the contact points between mold halves 718 and 719 and the housing 700 or semiconductor die. After closing molds 718 and 719, material for manufacturing package 815 is introduced. Due to the forming of molds 718 and 719 and the sealing by membrane 720, the sensor section of the semiconductor die remains unwetted by the material of package 815. Bonding wires 712 and the housing contact surfaces and semiconductor die contact surfaces contacted by the bonding wires are surrounded by the material of package 815.

[0048] exist Figure 9 The image shows the sensor 900 after demolding. Here, the sensor section of the semiconductor die is not surrounded by the material of the package 815.

[0049] Figure 10 As shown, the sensor section can finally be covered with gel 1014 to prevent it from being contaminated by impurity particles or other harmful environmental influences.

[0050] Some embodiments are defined by the following examples:

[0051] Example 1. A semiconductor die,

[0052] The semiconductor die described herein has a microelectronic segment.

[0053] The microelectronic segment contains integrated circuits.

[0054] The semiconductor die has a sensor section.

[0055] The sensor section is adjacent to the edge of the semiconductor die.

[0056] Example 2. The semiconductor die according to Example 1,

[0057] The sensor section described therein has:

[0058] Pressure sensor elements, especially capacitive pressure sensor elements, and / or

[0059] Magnetic sensor elements, especially Hall sensor elements, and / or

[0060] Accelerometer sensor elements, and / or

[0061] Ultrasonic transducer elements, and / or

[0062] Acoustic transducer components.

[0063] Example 3. The semiconductor die according to Example 1 or 2,

[0064] The sensor section has a movable area.

[0065] Example 4. A semiconductor die according to any of the preceding examples,

[0066] The semiconductor die has a die contact surface in the microelectronic segment.

[0067] Example 5. The semiconductor die according to Example 4,

[0068] The die contact surface is located on the side of the microelectronics section opposite to the sensor section.

[0069] Example 6. A semiconductor die according to any of the preceding examples,

[0070] The sensor section described therein does not have a metal interconnect layer.

[0071] Example 7. A semiconductor die according to any of the preceding examples,

[0072] The semiconductor die described herein has a rectangular shape in a top view.

[0073] The semiconductor die is divided by a plane into a microelectronics section that is rectangular in top view and a sensor section that is rectangular in top view.

[0074] Example 8. A sensor,

[0075] The sensor has a semiconductor die according to any of the foregoing examples.

[0076] The sensor has a housing, wherein the housing has:

[0077] Mounting surface,

[0078] Contact terminals, and

[0079] The housing contact surface is electrically connected to the contact terminal.

[0080] and

[0081] The sensor has bonding wires.

[0082] The die contact surface is electrically connected to the housing contact surface by means of the bonding wire.

[0083] The semiconductor die is mechanically connected to the mounting surface, in particular, by means of an adhesive.

[0084] Example 9. The sensor according to Example 8,

[0085] The sensor section of the semiconductor die is not wetted by the adhesive.

[0086] Example 10. The sensor according to Example 8 or 9,

[0087] The sensor section of the semiconductor die is covered with gel.

[0088] Example 11. The sensor according to any one of Examples 8 to 10,

[0089] The die contact surface and / or the bonding wire and / or the housing contact surface are embedded in the package.

[0090] Example 12. The sensor according to Example 11,

[0091] The encapsulation is made by membrane-assisted casting.

[0092] Example 13. The sensor according to any one of Examples 8 to 12,

[0093] A blocking element is provided on the side of the semiconductor die opposite to the mounting surface to prevent the sensor section from being wetted by the encapsulation material, and in particular to separate the encapsulation and the gel.

[0094] Example 14. The sensor according to any one of Examples 8 to 13,

[0095] A barrier element is provided on the side of the semiconductor die facing the mounting surface to prevent the sensor section from being wetted by the adhesive.

[0096] While specific embodiments have been shown and described herein, those skilled in the art will recognize that various alternative and / or equivalent implementations can be chosen to replace the specific embodiments shown and described herein without departing from the scope of the invention as illustrated. This application is intended to cover all adaptations or variations of the specific embodiments discussed herein. Therefore, the invention is intended to be limited only by the claims and their equivalents.

Claims

1. A semiconductor die (100) having a stepped structure consisting of two layers, The semiconductor die (100) includes a microelectronic segment (101) as a first step, wherein the microelectronic segment (101) includes an integrated circuit (102) and a metal interconnect layer (107) for electrically connecting the integrated circuit to other semiconductor devices. The semiconductor die (100) includes a sensor section (103) as a second step. The sensor segment (103) is adjacent to the edge (104) of the semiconductor die (100). The integrated circuit (102) and the sensor segment (103) are located in the same first layer. The metal interconnect layer (107) is disposed only in an additional layer on the first layer and is spaced apart from the edge (104) of the semiconductor die (100) by the sensor segment (103).

2. The semiconductor die (100) according to claim 1. The sensor section (103) described therein has: Pressure sensor elements, and / or Magnetic sensor elements, and / or Accelerometer sensor elements, and / or Ultrasonic transducer elements, and / or Acoustic transducer components.

3. The semiconductor die (100) according to claim 1 or 2. The sensor section (103) has a movable area (105).

4. The semiconductor die (100) according to claim 1 or 2. The semiconductor die (100) has a die contact surface (106) in the microelectronic segment (101).

5. The semiconductor die (100) according to claim 4. The die contact surface (106) is arranged on the side of the microelectronic section (101) opposite to the sensor section (103).

6. The semiconductor die (100) according to claim 1 or 2. The semiconductor die (100) has a rectangular shape in top view. The semiconductor die (100) is divided by a plane (108) into a microelectronics section (101) that is rectangular in top view and a sensor section (103) that is rectangular in top view.

7. A sensor (300), The sensor has a semiconductor die (100) according to any one of the preceding claims. The sensor has a housing, wherein the housing has: Mounting surface (309). Contact terminal (510), and The housing contact surface (311) is electrically connected to the contact terminal (510). and The sensor has a bonding wire (312). The die contact surface (106) is electrically connected to the housing contact surface (311) by means of the bonding wire (312). The semiconductor die (100) is mechanically connected to the mounting surface (309) by means of an adhesive (313).

8. The sensor (400) according to claim 7. The sensor section (103) of the semiconductor die (100) is not wetted by the adhesive (313).

9. The sensor (300) according to claim 7 or 8. The sensor segment (103) of the semiconductor die (100) is covered with gel (314).

10. The sensor (300) according to claim 9. The die contact surface (106) and / or the bonding wire (312) and / or the housing contact surface (311) are embedded in the package (315).

11. The sensor (1000) according to claim 10. The encapsulation (915) is made by film-assisted casting.

12. The sensor (300) according to claim 10. A blocking element (316) is provided on the side of the semiconductor die (100) opposite to the mounting surface (309) to prevent the sensor section (103) from being wetted by the material of the package (315).

13. The sensor (300) according to claim 12. A blocking element (316) is provided on the side of the semiconductor die (100) opposite to the mounting surface (309) for separating the package (315) and the gel (314).

14. The sensor according to claim 7 or 8, A barrier (417) is provided on the side of the semiconductor die (100) facing the mounting surface (309) to prevent the sensor section (103) from being wetted by the adhesive (313).

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