Organic light emitting display device and method of manufacturing the same

Abstract

Disclosed is an organic light emitting display device capable of reducing the number of contact holes, thereby improving aperture ratio in a structure in which a power line is branched so that a line passing through the branch provides power to a thin film transistor. Also disclosed is a method for manufacturing the organic light emitting display device. To this end, in the branched line, a contact hole is not formed adjacent to a driving thin film transistor, but a contact hole is formed adjacent to only a power line VDD / Ref. A double line of the branched line consisting of an active layer and a molybdenum-titanium layer extends from the contact hole to the driving thin film transistor, so that power is provided to the driving thin film transistor through the molybdenum-titanium layer MoTi.

Description

Technical Field

[0001] This disclosure relates to an organic light-emitting display device and a method for manufacturing the organic light-emitting display device, wherein in a structure in which branch lines extend from the power line VDD and supply power to the thin-film transistor TFT, the number of contact holes is reduced, thereby increasing the aperture ratio of the device. Background Technology

[0002] OLED displays utilize organic light-emitting diodes (OLEDs) that offer high brightness and low operating voltage, and are self-emissive. Therefore, OLED displays boast high contrast and are easily implemented as ultra-thin displays. Furthermore, their response time is only a few microseconds (μs), making it ideal for displaying moving images. The devices are not limited by viewing angles and are stable at low temperatures.

[0003] In this OLED display device, a pixel P has a structure including three thin-film transistors Tsw, Tdr, and Tss, and a capacitor C1. The pixel includes: an organic light-emitting diode (OLED) EL; a driving thin-film transistor Tdr that supplies current to the OLED EL; a scanning thin-film transistor Tsw that receives a data voltage Vdata and is disposed between the driving thin-film transistor Tdr and a line for supplying the data voltage Vdata to the gate of the driving thin-film transistor Tdr according to a scan signal Vscan; a sensing thin-film transistor Tss that is connected between a sensing controller and the driving thin-film transistor Tdr and coupled to both the sensing controller and the driving thin-film transistor Tdr to receive the current generated by the driving thin-film transistor Tdr according to a sensing signal Vsense; and a capacitor C1 connected and disposed between the gate and source of the driving thin-film transistor Tdr.

[0004] In order to achieve high-resolution images with higher definition than Full HD in OLED displays, each pixel must be configured with a high aperture ratio structure. Summary of the Invention

[0005] In the mass production structure of OLED display devices, current and voltage are supplied to the driving thin-film transistor Tdr using gate metal branches from the power line VDD and the reference line Ref.

[0006] To supply current and voltage to the driving thin-film transistor Tdr, the current and voltage must jump to its active layer ACT. Therefore, the number of contact holes increases by one per pixel. Thus, considering the power line VDD and reference line Ref of 4 pixels, 8 contact holes must be formed.

[0007] Therefore, the increase in the number of contact holes is the main reason for the decrease in the opening ratio.

[0008] Therefore, in order to solve the above problems, the inventors of this disclosure have invented a display device that can reduce the number of contact holes, thereby increasing the aperture ratio in the structure in which the power lines VDD / Ref are branched in an organic light-emitting diode (OLED) display device and power is supplied to the thin-film transistor Tdr through the branched lines, and have also invented a method for manufacturing the device.

[0009] Furthermore, for this purpose, the inventors of this disclosure have invented an organic light-emitting display device in which, in the branch line BL connecting the power line VDD / Ref and the driving thin-film transistor Tdr to each other, the contact hole CNT is not formed adjacent to the driving thin-film transistor Tdr, but is formed only adjacent to the power line VDD / Ref, and a double line composed of an active layer ACT and a molybdenum-titanium layer MoTi extends from the contact hole CNT to the driving thin-film transistor Tdr, so that power is supplied to the driving thin-film transistor Tdr through the molybdenum-titanium layer MoTi.

[0010] Furthermore, the inventors of this disclosure have invented a method for manufacturing an organic light-emitting display device, wherein the gate metal layer GM does not extend from the power line VDD / Ref to the driving thin-film transistor Tdr, and the power line VDD / Ref and the driving thin-film transistor Tdr are connected to each other through a branch line BL, and the branch line BL is made of a double layer of an active layer ACT and a molybdenum-titanium layer MoTi, and a contact hole CNT is formed only adjacent to the power line VDD / Ref, and the gate metal layer GM connected to the power line VDD / Ref contacts the molybdenum-titanium layer MoTi in the contact hole region CNT, such that the power from the power line VDD / Ref is provided to the channel of the driving thin-film transistor Tdr through the molybdenum-titanium layer MoTi in contact with the gate metal layer GM in the contact hole region CNT.

[0011] The purposes of this disclosure are not limited to those described above. Other purposes and advantages not mentioned in this disclosure may be understood based on the following description and may be more clearly understood based on embodiments of this disclosure. Furthermore, it will be readily understood that the purposes and advantages of this disclosure may be achieved using the means set forth in the claims and combinations thereof.

[0012] An organic light-emitting OLED display device according to embodiments of the present disclosure can be provided. A branch line BL connecting the power line VDD / Ref, used to apply power to the driving thin-film transistor (TFT), to the TFT Tdr may include a stack of a light-shielding layer LS, a buffer layer BUF, an active layer ACT, a molybdenum-titanium layer MoTi, and a gate insulating layer GI. In the branch line, a contact hole CNT is formed only adjacent to the power line VDD / Ref, and the contact hole is not formed adjacent to the TFT Tdr. In the contact hole region CNT, a gate metal layer GM is formed on the gate insulating layer GI. When the gate metal layer GM and the molybdenum-titanium layer MoTi are in contact with each other, a double line formed by the active layer ACT and the molybdenum-titanium layer MoTi can extend from the contact hole CNT to the TFT Tdr. Therefore, power from the power line VDD / Ref can be supplied from the contact hole CNT to the metallized portion (channel) of the TFT Tdr through the molybdenum-titanium layer MoTi.

[0013] Furthermore, a method for manufacturing an organic light-emitting display device according to embodiments of the present disclosure can be provided. The OLED display device manufacturing method includes: forming a branch line BL that connects a power line VDD / Ref to a driving thin-film transistor Tdr. The formation of the branch line BL includes: forming a light-shielding layer LS on a substrate; forming a buffer layer BUF on the light-shielding layer; forming a bilayer consisting of an active layer ACT and a molybdenum-titanium layer MoTi on the buffer layer; forming a gate insulating layer GI on the molybdenum-titanium layer; forming a contact hole CNT only in the region overlapping with the light-shielding layer LS; and forming a gate metal layer GM in the contact hole region CNT, on the top surface of the active layer, the molybdenum-titanium layer, and the gate insulating layer, wherein the molybdenum-titanium layer MoTi and the gate metal layer GM are in contact with each other in the contact hole region CNT, and the bilayer consisting of the active layer ACT and the molybdenum-titanium layer MoTi extends to the channel of the driving thin-film transistor Tdr. Therefore, the power from the power line VDD / Ref can be supplied to the metallized portion (channel) of the driving thin-film transistor Tdr through the molybdenum-titanium layer MoTi, which is in contact with the gate metal layer GM in the contact hole region CNT.

[0014] According to the OLED display device and OLED display device manufacturing method according to the embodiments of the present disclosure, the contact hole CNT is formed only adjacent to the power line VDD / Ref, and the contact hole CNT is not formed adjacent to the driving thin film transistor Tdr, thereby reducing the number of contact holes per pixel.

[0015] Therefore, according to embodiments of the present disclosure, an organic light-emitting diode (OLED) display device can reduce the number of contact holes in a structure in which the power line VDD / Ref is branched and power is supplied to the thin-film transistor Tdr through the branched lines, thereby increasing the aperture ratio.

[0016] Furthermore, according to embodiments of this disclosure, the active layer ACT and the molybdenum-titanium layer MoTi, which are dual-line structures, can extend from the contact hole CNT to the driving thin-film transistor Tdr. Therefore, the gate metal layer GM, which supplies power from the power line VDD / Ref to the driving thin-film transistor Tdr, may not extend from the power line VDD / Ref to the driving thin-film transistor Tdr.

[0017] Therefore, according to this disclosure, the gate metal layer GM may not extend from the power line VDD / Ref to the driving thin-film transistor Tdr. Consequently, the amount of material in the gate metal layer GM can be reduced during the fabrication of the power line.

[0018] The effects of this disclosure are not limited to those described above, and those skilled in the art will clearly understand from the following description other effects not mentioned. Attached Figure Description

[0019] Figure 1 This is a schematic diagram showing the planar structure and cross-section of the branch line of an organic light-emitting display device according to an embodiment of the present disclosure.

[0020] Figure 2 This is a diagram showing the structure and cross-sectional view of the metallized portion B-B' adjacent to the driving thin-film transistor in an organic light-emitting display device according to an embodiment of the present disclosure.

[0021] Figure 3 This is a cross-sectional view showing the contact hole portion C-C' of the branch line in an organic light-emitting display device according to an embodiment of the present disclosure.

[0022] Figure 4 This is a diagram showing a cross-section at the midpoint D-D' of a branch line in an organic light-emitting display device according to an embodiment of the present disclosure.

[0023] Figure 5 This is a diagram showing a cross-sectional structure of the portion of the branch line connected to the driving thin-film transistor according to an embodiment of the present disclosure.

[0024] Figure 6 This is a diagram showing the structure of a branch line connected to a portion of a driving thin-film transistor according to an embodiment of the present disclosure.

[0025] Figure 7 This is a diagram illustrating the capacitor structure in a branch line according to an embodiment of the present disclosure.

[0026] Figure 8 This is a diagram showing the structure of a branch line in the contact hole portion near the power line according to an embodiment of the present disclosure.

[0027] Figure 9 This is a diagram showing the increase in the total contact area due to the branch lines in an embodiment according to this disclosure.

[0028] Figure 10 This is a cross-sectional view showing a branch line and a driving thin-film transistor connected to the branch line according to an embodiment of the present disclosure.

[0029] Figure 11 This is a flowchart sequentially illustrating the process of manufacturing branch lines in a method for manufacturing an organic light-emitting display device according to embodiments of the present disclosure.

[0030] Figures 12 to 17 It is a cross-sectional view showing the manufacturing process of the branch line according to the embodiments of this disclosure. Detailed Implementation

[0031] The advantages and features of this disclosure will become apparent from the embodiments described in detail below with reference to the accompanying drawings. However, this disclosure is not limited to the embodiments disclosed herein, but can be implemented in various different forms. Therefore, these embodiments are set forth only to complete this disclosure and to fully inform those skilled in the art to which this disclosure pertains, and this disclosure is limited only by the scope of the claims.

[0032] The shapes, dimensions, scales, angles, numbers, etc., disclosed in the accompanying drawings used to describe embodiments of this disclosure are exemplary, and this disclosure is not limited thereto. The same reference numerals refer to the same elements herein. Furthermore, for the sake of simplicity, descriptions and details of known steps and elements have been omitted. In addition, numerous specific details are set forth in the following detailed description of this disclosure to provide a thorough understanding of it. However, it should be understood that this disclosure can be practiced without these specific details. In other instances, known methods, processes, components, and circuits have not been described in detail so as not to unnecessarily obscure aspects of this disclosure.

[0033] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this disclosure. As used herein, unless the context clearly indicates otherwise, the singular forms “a” and “an” are intended to include the plural forms as well. It will also be understood that the terms “comprising,” “including,” “including…includes,” and “including” as used herein specify the presence of stated features, integers, operations, elements, and / or components, but do not preclude the presence or addition of one or more other features, integers, operations, elements, components, and / or portions thereof. As used herein, the term “and / or” includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one” may modify the entire list of elements when preceding it, and may not modify the individual elements of the list. Errors or tolerances may occur when interpreting numerical values, even if they are not explicitly described.

[0034] Furthermore, it will be understood that when a first element or layer is referred to as existing “on” a second element or layer, the first element may be directly disposed on the second element or may be indirectly disposed on the second element, wherein a third element or layer is disposed between the first element or layer and the second element or layer. It should be understood that when an element or layer is referred to as being “connected to” or “coupled to” another element or layer, it may be directly on, directly connected to, or directly coupled to another element or layer, or one or more intermediate elements or layers may exist. Furthermore, it should be understood that when an element or layer is referred to as being “between” two elements or layers, it may be the only element or layer between the two elements or layers, or one or more intermediate elements or layers may exist.

[0035] Furthermore, as used herein, when a layer, membrane, region, plate, etc., is disposed "on" or "on top" of another layer, membrane, region, plate, etc., the former can directly contact the latter, or another layer, membrane, region, plate, etc., can be disposed between the former and the latter. As used herein, when a layer, membrane, region, plate, etc., is directly disposed "on" or "on top" of another layer, membrane, region, plate, etc., the former directly contacts the latter, and no other layer, membrane, region, plate, etc., is disposed between the former and the latter. Furthermore, as used herein, when a layer, membrane, region, plate, etc., is disposed "below" or "below" another layer, membrane, region, plate, etc., the former can directly contact the latter, or another layer, membrane, region, plate, etc., can be disposed between the former and the latter. As used herein, when a layer, membrane, region, plate, etc., is directly disposed "below" or "below" another layer, membrane, region, plate, etc., the former directly contacts the latter, and no other layer, membrane, region, plate, etc., is disposed between the former and the latter.

[0036] In descriptions of temporal relationships, such as those between two events that are preceded by "after", "followed", or "before", another event may occur between the two events unless it is indicated that the event is "directly after", "directly following", or "directly before".

[0037] It should be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the spirit and scope of this disclosure, the first element, component, region, layer, or part described below may be referred to as the second element, component, region, layer, or part.

[0038] Features of the various embodiments of this disclosure can be combined with each other in part or in whole, and can be technically related to or operable on each other. Embodiments can be implemented independently of each other, or can be implemented together in an associated relationship.

[0039] Unless otherwise defined, all terms used herein, including technical and scientific terms, shall have the same meaning as commonly understood by one of ordinary skill in the art to which the inventive concept pertains. It should also be understood that terms, such as those defined in commonly used dictionaries, shall be interpreted as having a meaning consistent with their meaning in the context of the relevant art and shall not be interpreted in an idealized or overly formal sense unless expressly defined herein.

[0040] In the following, an organic light-emitting display device according to an embodiment of the present disclosure and a method for manufacturing the device will be described.

[0041] Figure 1 This is a schematic diagram showing the planar structure and cross-section of the branch line of an organic light-emitting display device according to an embodiment of the present disclosure.

[0042] Reference Figure 1 An organic light-emitting display device 100 according to an embodiment of the present disclosure includes: a driving thin-film transistor Tdr, the driving thin-film transistor Tdr including a source electrode, a drain electrode, a gate electrode and a channel; a power line VDD for applying power to the driving thin-film transistor; and a branch line BL connecting the power line and the driving thin-film transistor to each other.

[0043] In this regard, the power line is exemplified as VDD for applying the supply voltage VDD, but is not limited thereto. The power line can also be represented as the reference line Ref for applying the reference voltage VRef.

[0044] According to the cross-sectional view taken along line A-A', branch line BL includes a light-shielding layer LS on substrate SUB, a buffer layer BUF on the light-shielding layer, an active layer ACT on the buffer layer, a first metal layer on the active layer, and a gate insulating layer GI on the first metal layer. In this context, the first metal layer refers to a layer of metal containing a conductive material, such as molybdenum-titanium (MoTi), an alloy of molybdenum (Mo) and titanium (Ti). An example of the first metal layer being embodied as a molybdenum-titanium layer MoTi will be described below.

[0045] A light-shielding layer LS can be formed on the top surface of the substrate SUB, while exposing a portion of the substrate. The light-shielding layer LS on the substrate SUB can be made of a metallic material with light-blocking function to block the inflow of external light. The light-shielding layer LS can consist of a single layer or multiple layers, which are made of one of the metals such as molybdenum (Mo), aluminum (Al), chromium (Cr), tungsten (W), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

[0046] A buffer layer BUF can be formed on the top surface of the exposed portion of the substrate and on the top surface of the light-shielding layer. The buffer layer BUF covering the light-shielding layer LS on the substrate SUB is formed as a structure having a single insulating layer or multiple insulating layers stacked therein, to block foreign substances, including moisture and oxygen, from flowing out of the substrate SUB. The buffer layer BUF can be made of materials such as silicon oxide (SiO2). x SiN x Aluminum oxide AlO x It is made of inorganic insulating materials such as [material name], and can be composed of single-layer or multi-layer structures.

[0047] The active layer ACT can be formed on the top surface of the buffer layer BUF. The active layer ACT can be made of oxide semiconductors based on IZO (indium zinc oxide) or IGZO (indium gallium zinc oxide).

[0048] A molybdenum-titanium (MoTi) layer can be formed on the top surface of the active layer. MoTi can refer to an alloy of molybdenum (Mo) and titanium (Ti). A dual-deposition scheme can be used to form both the active layer and the MoTi layer. Alternatively, a single-mask process using either a halftone or diffraction mask can be employed to form both the active layer and the MoTi layer.

[0049] The gate insulating layer GI can be formed on the top surface of the molybdenum-titanium layer. The gate insulating layer GI can be made of an oxide-based insulating material to prevent changes in the characteristics of the active layer ACT made of oxide semiconductor.

[0050] Contact holes (CNTs) can be formed in the molybdenum-titanium layer and the gate insulating layer in the area where they overlap with the light-shielding layer.

[0051] The lower two sidewalls and bottom of the gate metal layer GM are in contact with the molybdenum-titanium layer in the contact via CNT. The gate metal layer GM can be formed above the active layer ACT, on the sides of the molybdenum-titanium layer, and on the sides and top surface of the gate insulating layer GI. In this regard, the gate metal layer GM can be referred to as the gate or GAT.

[0052] As described above, in the branch line BL according to this disclosure, contact holes CNT are formed only at locations adjacent to the power line VDD / Ref, and not at locations adjacent to the driving thin-film transistor Tdr.

[0053] Furthermore, the branch line BL has a gate metal layer GM on the gate insulating layer GI within the contact hole CNT. When the gate metal layer GM and the molybdenum-titanium layer MoTi are in contact with each other within the contact hole CNT, the active layer ACT and the molybdenum-titanium layer MoTi of the branch line BL can extend from the contact hole CNT to the driving thin-film transistor Tdr. Therefore, the bilinear structure formed by the active layer ACT and the molybdenum-titanium layer MoTi of the branch line can extend to the driving thin-film transistor Tdr.

[0054] Therefore, the power from the power line VDD / Ref can be supplied from the contact hole CNT through the molybdenum-titanium layer MoTi to the metallized portion (channel) driving the thin-film transistor Tdr.

[0055] Furthermore, despite Figure 1 Although not shown, an organic light-emitting display device may include a display panel having a display area AA for displaying an image and non-display areas NA disposed on both sides of the display area AA for providing signals to the display area AA.

[0056] Within the display area AA, multiple data lines and multiple gate lines can be arranged to intersect each other. Pixel P can be positioned at each intersection point between them.

[0057] Although not shown, in a display panel, multiple gate lines GL and multiple data lines DL can be disposed on an organic or plastic substrate and intersect with each other. Red (R), green (G), and blue (B) pixels P are respectively disposed at the intersections between gate lines GL and data lines DL.

[0058] Furthermore, power lines VDD extending in a direction parallel to the data lines DL can be formed on the display panel and can be connected to each pixel P.

[0059] Furthermore, although not shown, each pixel P may include at least one organic light-emitting diode (OLED), a capacitor, a switching thin-film transistor (TFT), and a driving TFT Tdr. In this regard, the OLED may include a first electrode (hole injection electrode), an organic compound layer, and a second electrode (electron injection electrode).

[0060] The organic compound layer may also include various organic layers, other than the light-emitting layer, for effectively transporting holes or electron carriers to the light-emitting layer. These organic layers may include a hole injection layer and a hole transport layer located between the first electrode and the light-emitting layer, and an electron injection layer and an electron transport layer located between the second electrode and the light-emitting layer.

[0061] Furthermore, the driving thin-film transistor Tdr and the switching thin-film transistor (not shown) can be connected to the gate line GL, the control signal supply line CL, and the data line DL. The switching thin-film transistor is turned on according to the gate voltage input to the gate line GL. Simultaneously, the data voltage input to the data line DL is transmitted to the driving thin-film transistor Tdr. A capacitor is connected and disposed between the thin-film transistor and the power line, and is charged by the data voltage transmitted from the thin-film transistor and held for one frame.

[0062] Furthermore, the driving thin-film transistor Tdr is connected to the power line VDD and a capacitor, and provides a drain current to the organic light-emitting diode (OLED) corresponding to the voltage between the gate and source. Therefore, the OLED emits light using the drain current. In this respect, the driving thin-film transistor Tdr includes a gate electrode, a source electrode, and a drain electrode. The anode of the OLED is connected to one electrode of the driving thin-film transistor Tdr.

[0063] Figure 2 This is a diagram showing the structure and cross-sectional view of the metallized portion B-B' adjacent to the driving thin-film transistor in an organic light-emitting display device according to an embodiment of the present disclosure.

[0064] Reference Figure 2 In the organic light-emitting display device 100 according to the present disclosure, a double line consisting of an active layer ACT and a molybdenum-titanium layer MoTi formed by a branch line BL can extend from the contact hole CNT to the driving thin film transistor Tdr.

[0065] In this regard, the active layer ACT of the branch line BL is non-conductive, and the molybdenum-titanium layer MoTi is conductive.

[0066] The driving thin-film transistor Tdr is embodied as a thin-film transistor TGAT with a top gate electrode and includes a metallized active layer. In other words, in the driving thin-film transistor Tdr, a buffer layer BUF is disposed on a light-shielding layer LS, a metallized active layer ACT is disposed on the buffer layer, a gate insulating layer GI is disposed on the active layer, and a gate electrode GE is disposed on the gate insulating layer. (Refer to...) Figure 10 Together, describe the cross-sectional structure of the driving thin-film transistor Tdr and the cross-sectional structure of the branch lines.

[0067] The active layer ACT of the branch line BL extends from the contact hole CNT and leads to the metallized active layer that drives the thin-film transistor Tdr.

[0068] The molybdenum-titanium layer MoTi of the branch line BL extends from the contact hole CNT to the driving thin film transistor Tdr, but does not contact the driving thin film transistor Tdr, and is spaced apart from the driving thin film transistor Tdr by a predetermined distance.

[0069] In this regard, the molybdenum-titanium layer (MoTi) of the branch line BL can partially contact the active metallization layer ACT of the driving thin-film transistor Tdr. Therefore, the power transmitted through the gate metallization layer GM of the contact hole CNT is transferred to the active metallization layer ACT of the driving thin-film transistor Tdr through the molybdenum-titanium layer (MoTi).

[0070] The active metallization layer ACT that drives the thin-film transistor Tdr is formed using a halftone ashing (H / T ashing) and then a wet etching process using OZ acid, and is in contact with the drain electrode DE.

[0071] Therefore, the power of the power line VDD / Ref is transferred from the contact hole CNT through the molybdenum-titanium layer MoTi that contacts the gate metal layer GM to the metallized active layer ACT that drives the thin film transistor Tdr, and then through the metallized active layer ACT to the drain electrode DE.

[0072] Figure 3 This is a cross-sectional view showing the contact hole portion C-C' of the branch line in an organic light-emitting display device according to an embodiment of the present disclosure.

[0073] Reference Figure 3 In the cross-section of the contact hole portion C-C' of the branch line BL according to an embodiment of the present disclosure, the active layer ACT is disposed on the buffer layer BUF, and the gate metal layer GM and the molybdenum-titanium layer MoTi are disposed on the active layer.

[0074] In other words, when the active layer ACT is disposed on the buffer layer BUF, the molybdenum-titanium layer MoTi is disposed on the active layer, and the gate insulating layer GI is disposed on the molybdenum-titanium layer, these three layers ACT, MoTi, and GI are etched to form a contact hole CNT. The gate metal layer GM can then fill the contact hole CNT.

[0075] Therefore, in the contact hole region CNT, the central portion of the active layer ACT contacts the gate metal layer GM. In the two side regions surrounding the contact hole CNT, the active layer ACT contacts the molybdenum-titanium layer MoTi.

[0076] Therefore, since the gate metal layer GM and the molybdenum-titanium layer MoTi are electrically in contact with each other in the contact hole CNT, power can be transferred to the driving thin film transistor Tdr through the gate metal layer GM extending from the power line VDD / Ref and the molybdenum-titanium layer MoTi of the contact gate metal layer.

[0077] Figure 4 This is a diagram showing a cross-section at the midpoint D-D' of a branch line in an organic light-emitting display device according to an embodiment of the present disclosure.

[0078] Reference Figure 4 According to embodiments of this disclosure, the branch line BL branches from the power line VDD / Ref and extends not only to one pixel P but also to another pixel to supply power to it.

[0079] In this regard, in the cross section at the midpoint D-D' of the branch line BL, the active layer ACT is disposed on the buffer layer BUF, the molybdenum-titanium layer MoTi is disposed on the active layer, and the gate insulating layer GI is disposed on the molybdenum-titanium layer.

[0080] In addition, the passivation layer PAS can be set on the molybdenum-titanium layer MoTi.

[0081] The width of the branch line BL can be from 330 angstroms Up to 340 Angers Within the range, preferably 330 angstroms

[0082] The vertical dimension of the branch line BL can be 170 angstroms. Up to 250 Angstroms The range is preferably 220 angstroms.

[0083] Figure 5 This is a diagram showing a cross-sectional structure of the portion of the branch line connected to the driving thin-film transistor according to an embodiment of the present disclosure.

[0084] Reference Figure 5 According to embodiments of the present disclosure, the branch line BL is configured such that the light-shielding layer LS is disposed on the substrate SUB to expose a portion of the substrate.

[0085] Therefore, the buffer layer BUF is formed on the exposed portion of the substrate and the light-shielding layer. That is, the buffer layer BUF is positioned to cover the two opposite edges of the substrate SUB and the light-shielding layer LS.

[0086] Therefore, the portion of the buffer layer BUF that overlaps with the light-shielding layer protrudes upwards, while the non-protruding portion of the buffer layer BUF is coplanar with the light-shielding layer. The buffer layer BUF bends at the position between the protruding and non-protruding portions.

[0087] The active layer ACT is formed on the buffer layer BUF. The active layer ACT can be formed separately on the protruding portions of the buffer layer. Therefore, the active layer ACT has left and right separated and spaced portions.

[0088] A molybdenum-titanium (MoTi) layer can be formed on the active layer. The MoTi layer can be formed on each of the left and right spaced portions of the active layer.

[0089] Figure 6 This is a diagram showing the structure of a branch line connected to a portion of a driving thin-film transistor according to an embodiment of the present disclosure.

[0090] Reference Figure 6 In the branch line BL according to an embodiment of this disclosure, a bilinear connection consisting of an active layer ACT and a molybdenum-titanium layer MoTi is connected to the driving thin-film transistor Tdr. In this respect, the active layer ACT acts as a non-conductor, and the molybdenum-titanium layer MoTi acts as a conductor.

[0091] In this regard, the molybdenum-titanium layer MoTi forming the double line does not contact the driving thin-film transistor Tdr and can be spaced apart from the driving thin-film transistor Tdr by a predetermined distance.

[0092] However, the active layer ACT that forms the double line extends while in contact with the metallized first active layer BACT (buffered active layer) that drives the thin-film transistor Tdr.

[0093] The inner end of the molybdenum-titanium layer MoTi overlaps and contacts the first active metallized layer BACT at the contact point between the active layer ACT of the branch line BL and the first active metallized layer BACT that drives the thin film transistor Tdr.

[0094] Therefore, the power from the power line VDD / Ref is transferred through the gate metal layer GM of the contact hole CNT to the molybdenum-titanium layer MoTi, and then from the molybdenum-titanium layer MoTi to the metallized first active layer BACT that drives the thin film transistor Tdr.

[0095] In the portion of the branch line BL that connects to the driving thin-film transistor Tdr, a buffer layer BUF is disposed on the light-shielding layer LS, and the active layer ACT and the first metallized active layer BACT are disposed on the buffer layer. A molybdenum-titanium layer MoTi is disposed on the active layer, while the gate insulating layer GI of the driving thin-film transistor Tdr is disposed on the first metallized active layer. In the driving thin-film transistor Tdr, the gate metal layer GM or the gate electrode GE is disposed on the gate insulating layer.

[0096] In the prior art, when a branch line BL and a driving thin-film transistor Tdr are connected to each other, a second contact hole must be formed adjacent to the driving thin-film transistor Tdr. However, according to this disclosure, the molybdenum-titanium layer MoTi of the branch line BL contacts and connects to the metallized first active layer BACT of the driving thin-film transistor Tdr, eliminating the need for a second contact hole.

[0097] Therefore, when the power line VDD / Ref and the driving thin-film transistor Tdr are connected to each other by the branch line BL according to the embodiment of this disclosure, the effect of reducing eight contact holes per pixel P can be obtained.

[0098] Figure 7 This is a diagram illustrating the capacitor structure in a branch line according to an embodiment of the present disclosure.

[0099] Reference Figure 7 In the branch line BL according to the embodiments of the present disclosure, a buffer layer BUF is disposed on a light-shielding layer LS, and an active layer ACT is disposed on the buffer layer. A molybdenum-titanium layer MoTi is disposed on the active layer, a gate insulating layer GI is disposed on the molybdenum-titanium layer, and a gate metal layer GAT is disposed on the gate insulating layer.

[0100] In this regard, as mentioned above, the light-shielding layer LS can be made of a metallic material with light-blocking function to block the inflow of external light. That is, the light-shielding layer LS can be made of one of the metals such as molybdenum (Mo), aluminum (Al), chromium (Cr), tungsten (W), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

[0101] Therefore, since the light-shielding layer LS can be used as one electrode of the capacitor, the light-shielding layer LS and the molybdenum-titanium layer MoTi can constitute the first capacitor C1, while the buffer layer BUF and the active layer ACT are placed between the light-shielding layer LS and the molybdenum-titanium layer MoTi. In this regard, the thickness of the buffer layer BUF, which serves as the insulator in the first capacitor C1, can be 4000 angstroms.

[0102] Since molybdenum-titanium (MoTi) refers to an alloy of molybdenum (Mo) and titanium (Ti), the molybdenum-titanium layer MoTi can be used as the opposite electrode of the first capacitor C1.

[0103] Furthermore, a molybdenum-titanium layer (MoTi) and a gate metal layer (GAT) made of metallic materials can constitute the second capacitor C2. In this regard, the thickness of the gate insulating layer (GI), which serves as the insulator in the second capacitor C2, can be 1500 angstroms.

[0104] It can be seen that the thickness of the gate insulating layer GI has increased from 23,500 angstroms. (Standard example) Significantly reduced to 1500 angstroms (This example)

[0105] Furthermore, it can be seen that when the branch line BL structure according to this disclosure is applied, the size of the storage capacitor has also been reduced to 62% of the size of the conventional example.

[0106] Figure 8 This is a diagram showing the structure of a branch line in the contact hole portion near the power line according to an embodiment of the present disclosure. Figure 9 This is a diagram showing the increase in the total contact area due to the branch lines in an embodiment according to this disclosure.

[0107] Reference Figure 8 and Figure 9 As can be seen from the above, in the branch line BL of the embodiment according to the present disclosure, the molybdenum-titanium layer MoTi contacts the gate metal layer GAT in the contact hole region CNT.

[0108] In the contact hole region CNT of the branch line BL, the active layer ACT is disposed on the buffer layer BUF, and the molybdenum-titanium layer MoTi and the gate metal layer GAT are disposed on the active layer ACT.

[0109] Therefore, when the gate metal layer GAT contacts the molybdenum-titanium layer MoTi, the power from the power line VDD / Ref is transferred from the contact hole CNT through the gate metal layer GAT to the molybdenum-titanium layer MoTi.

[0110] In a conventional example, the active layer ACT functions as a conductor within the contact hole region CNT. However, when the active layer ACT is offset from the contact hole CNT, the active layer functions as a semiconductor, thus preventing complete contact. However, according to this disclosure, complete contact is achieved because the molybdenum-titanium layer MoTi contacts the gate metal layer within the contact hole region CNT. Therefore, it can be seen that the size of the contact hole CNT has been reduced according to its structure, and correspondingly, as... Figure 9 As shown, the complete contact area has been reduced. It can be seen that in the contact hole region CNT, the conventional complete contact area is 4.1μm × 7.5μm, while according to the embodiment of this disclosure, the complete contact area is reduced to 4.1μm × 4.1μm due to the contact hole CNT.

[0111] Figure 10 This is a cross-sectional view showing a branch line and a driving thin-film transistor connected to the branch line according to an embodiment of the present disclosure.

[0112] Reference Figure 10 As described above, in the branch line BL according to the embodiments of the present disclosure, the light-shielding layer LS is disposed on the substrate SUB, the buffer layer BUF is disposed on the light-shielding layer, the active layer ACT is disposed on the buffer layer, the molybdenum-titanium layer MoTi is disposed on the active layer, and the gate insulating layer GI is disposed on the molybdenum-titanium layer.

[0113] A contact hole (CNT) is formed in a portion of the molybdenum-titanium layer overlapping with the light-shielding layer and a portion of the gate insulating layer. A gate metal layer (GM) overlapping the active layer, the molybdenum-titanium layer, and the gate insulating layer is disposed in the contact hole region (CNT).

[0114] The active layer and the molybdenum-titanium layer extend from the contact hole CNT to the channel BACT that drives the thin-film transistor Tdr.

[0115] The driving thin-film transistor (Tdr) may include: a substrate SUB, a light-shielding layer LS disposed on the substrate SUB, a buffer layer BUF disposed on the light-shielding layer LS, a first active layer BACT disposed on the buffer layer BUF, a second active layer (main active layer) MACT disposed on the first active layer BACT such that a portion of the first active layer BACT is exposed, the first active layer BACT and the second active layer (main active layer) MACT stacked on the substrate SUB, a gate insulating layer GI disposed above the substrate SUB to cover the first active layer BACT and the second active layer MACT, a gate electrode GE disposed on the gate insulating layer GI to expose a portion of the gate insulating layer GI, an interlayer insulating layer ILD disposed on the gate insulating layer GI to cover the gate electrode GE, a source electrode SE and a drain electrode DE connected to the source region SA and drain region DA of the first active layer BACT respectively via source contact holes SH and drain contact holes DH passing through the interlayer insulating layer ILD and the gate insulating layer GI, and a passivation layer PAS disposed on the interlayer insulating layer ILD to cover the source electrode SE and the drain electrode DE.

[0116] In embodiments of this disclosure, an example is described where the driving thin-film transistor Tdr is connected to a branch line BL. However, this disclosure is not limited thereto. The same principle can be applied to cases where the sensing thin-film transistor Tss or the switching thin-film transistor Tsw is connected to a branch line.

[0117] In addition, the driving thin-film transistor Tdr may further include a light-shielding layer LS and a buffer layer BUF stacked between the substrate SUB and the first active layer BACT.

[0118] The light-shielding layer LS on the substrate SUB is made of a metallic material with light-blocking function to block external light from flowing into the first active layer BACT and the second active layer MACT. The light-shielding layer LS can be composed of a single layer or multiple layers, which are made of one of the metals such as molybdenum (Mo), aluminum (Al), chromium (Cr), tungsten (W), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu) or an alloy thereof.

[0119] The buffer layer BUF, disposed on the substrate SUB to cover the light-shielding layer LS, can be formed as a single insulating layer or a structure in which multiple insulating layers are stacked, to block foreign substances, including moisture and oxygen, from flowing out of the substrate SUB. The buffer layer BUF can be made of materials such as silicon oxide (SiO2). x SiN x Aluminum oxide AlO x It is made of inorganic insulating materials such as oxides and can consist of single-layer or multi-layer structures. The gate insulating layer GI can be made of oxide-based insulating materials to prevent changes in the characteristics of the active layers BACT and MCT made of oxide semiconductors.

[0120] The first active layer BACT and the second active layer MACT stacked on the buffer layer BUF can be made of different oxide semiconductors with different mobility characteristics. The second active layer MACT can have a higher mobility and can be thinner than the first active layer BACT, so it can be used as the main channel. The first active layer BACT can have a lower mobility and can be thicker than the second active layer MACT, and can have a metallized source region SA and a metallized drain region DA to reduce offset resistance and residual semiconductor region SCA.

[0121] The second active layer MCT can be made of an oxide semiconductor material with a carrier concentration higher than or equal to the reference value to achieve higher mobility characteristics than the reference value. For example, the second active layer MCT can be made of an oxide semiconductor material with a carrier concentration of 10 20 / cm 3 Or made of oxide semiconductor materials with even higher carrier concentrations to achieve 50cm 2 / Vs or greater high mobility characteristics. The second active layer MCT can be 10 20 / cm 3 100cm at high carrier concentration 2 The high mobility characteristic of / Vs is used to maintain semiconductor properties. Materials with carrier concentrations higher than the reference value can include transparent conductive oxides (TCOs). TCOs can include at least one of ITO (indium tin oxide), IZO (indium zinc oxide), and ATO (antimony tin oxide). For example, the second active layer MCT can be made of an oxide semiconductor based on IZO (indium zinc oxide) or IGZO (indium gallium zinc oxide).

[0122] The second active layer MCT can be formed with a reference value (50cm). 2 High mobility characteristics of ( / Vs) or greater, and formed with a thickness less than the maximum value, which maintains the semiconductor's switching characteristics controlled by the gate voltage. For example, with a reference value (50cm). 2The second active layer MCT with high mobility characteristics ( / Vs) or greater can be formed with a thickness greater than 0 nm and less than or equal to 10 nm. This is because when the second active layer MCT with high mobility characteristics has a thickness greater than the above maximum value, the channel is opened regardless of the gate voltage, and therefore the semiconductor characteristics that can be switched by the gate voltage may be lost.

[0123] In one example, when a metallized source region and a metallized drain region are formed at a second active layer MCT with a thickness less than the maximum value mentioned above, the offset resistance of the source and drain regions increases due to the thinness of the second active layer MCT, resulting in a decrease in current based on the same voltage, and thus potentially increasing the power consumption of the oxide TFT.

[0124] To prevent this, the driving thin-film transistor Tdr according to this disclosure has a first active layer BACT, which has a lower mobility and is thicker than the second active layer MACT. The first active layer BACT may have a metallized source region SA and a drain region DA to reduce its offset resistance. For example, the first active layer BACT may be made of materials with a carrier concentration of less than 10-1. 18 / cm 3 Made of oxide semiconductor, with a 30cm 2 / Vs or lower mobility. The first active layer BACT has a mobility of 10. 16 / cm 3 Or a higher carrier concentration, with a 10cm 2 / Vs or greater mobility is used to maintain oxide semiconductor properties. The first active layer BACT can have a thickness greater than 10 nm and less than or equal to 40 nm, such that the offset resistance of the source region SA and the drain region DA is below the threshold.

[0125] The first active layer BACT can be made of an oxide semiconductor comprising at least one metal selected from In, Ga, Zn, Al, Sn, Zr, Hf, Cd, Ni, and Cu. The first active layer BACT can be made of an oxide semiconductor having higher etch selectivity than the second active layer MCT, such that the first active layer BACT is less affected by the etching of the second active layer MCT, i.e., its etch rate is lower. For example, the first active layer BACT can be made of a Sn-based oxide semiconductor, and specifically, it can be made of one of ZnSnO, InSnZnO, InGaSnO, and ZnSiSnO.

[0126] The first active layer BACT may have a source region SA and a drain region DA with low resistance due to its metallization, and a remaining semiconductor region SCA between the source region SA and the drain region DA. The source region SA and the drain region DA of the first active layer BACT are used to reduce the offset resistance between the first active layer BACT and the source electrode SE and the drain electrode DE. The source region SA and the drain region DA are metallized regions formed by exposing the first active layer BACT to plasma, ultraviolet light UV, or an etchant to partially remove oxygen from the first active layer BACT. The source region SA and the drain region DA may be spaced apart from each other.

[0127] The second active layer MACT, formed on the first active layer BACT, overlaps and contacts the semiconductor region SCA between the source region SA and the drain region DA of the first active layer BACT, and also overlaps and contacts a portion of each of the source region SA and the drain region DA. In this way, a channel is formed between the source region SA and the drain region DA.

[0128] A gate insulating layer GI is formed above the buffer layer BUF, forming a stacked structure covering the first active layer BACT and the second active layer MACT. The gate insulating layer GI is formed on the second active layer MACT. The gate insulating layer GI can be made of materials such as silicon oxide (SiO2). x SiN x Aluminum oxide AlO x It is made of inorganic insulating materials such as oxides and can consist of single-layer or multi-layer structures. The gate insulating layer GI can be made of oxide-based insulating materials to prevent changes in the characteristics of the active layers BACT and MACT, which are made of oxide semiconductors.

[0129] A gate electrode GE, overlapping with the second active layer MCT, is formed on the gate insulating layer GI. The gate electrode GE can be formed as a single layer or a multilayer structure, which is made of one of the metals or an alloy thereof, such as molybdenum (Mo), aluminum (Al), chromium (Cr), tungsten (W), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu).

[0130] An interlayer insulating layer (ILD) covering the gate electrode GE is formed on the gate insulating layer GI. Source contact vias SH and drain contact vias DH extending through the interlayer insulating layer ILD and the gate insulating layer GI are formed. The interlayer insulating layer ILD can be made of materials such as silicon oxide (SiO2). x SiN x Aluminum oxide AlO x It is made of inorganic insulating materials such as [material name], and can be formed into a single-layer or multi-layer structure, or it can be made of organic insulating materials.

[0131] The source electrode SE and drain electrode DE are formed on the interlayer insulating layer ILD. The source electrode SE is connected to the source region SA of the first active layer BACT via a source contact hole SH, while the drain electrode DE is connected to the drain region DA of the first active layer BACT via a drain contact hole DH. Each of the source electrode SE and drain electrode DE consists of a single-layer or multi-layer structure made of one of a metal or an alloy thereof, such as molybdenum (Mo), aluminum (Al), chromium (Cr), tungsten (W), titanium (Ti), nickel (Ni), neodymium (Nd), or copper (Cu).

[0132] A passivation layer PAS covering the source electrode SE and drain electrode DE is formed on the interlayer insulating layer (ILD). The interlayer insulating layer (ILD) can be made of materials such as silicon oxide (SiOx), silicon nitride (SiNx), or aluminum oxide (AlOx). x It is made of inorganic insulating materials such as [material name], and can be composed of single-layer or multi-layer structures.

[0133] In the driving thin-film transistor Tdr with the above structure, the first active metallization layer BACT is connected to the molybdenum-titanium layer MoTi of the branch line BL. Therefore, the power from the power line VDD / Ref is conducted from the contact hole CNT to the molybdenum-titanium layer MoTi through the gate metallization layer GM, and thus from the molybdenum-titanium layer MoTi to the drain electrode DE through the first active metallization layer BACT.

[0134] Figure 11 This is a flowchart sequentially illustrating the process of manufacturing branch lines in an organic light-emitting display device manufacturing method according to embodiments of the present disclosure. Figures 12 to 17 It is a cross-sectional view showing the manufacturing process of the branch line according to the embodiments of this disclosure.

[0135] In the following text, reference will be made to Figures 11 to 17 The manufacturing process of a branch line according to an embodiment of this disclosure is described.

[0136] Reference Figure 11 and Figure 12 A light-shielding layer LS is formed on a substrate SUB using a first mask process M1, and a buffer layer BUF covering the light-shielding layer LS is formed on the substrate SUB.

[0137] In other words, a light-shielding layer LS is formed on the top surface of the substrate SUB, thus exposing a portion of the substrate. Then, a buffer layer BUF is formed on both the exposed top surface of the substrate and the top surface of the light-shielding layer. Therefore, the buffer layer BUF is formed to cover the entire light-shielding layer LS, while bending at a portion of its coverage area.

[0138] More specifically, a light-shielding layer LS is deposited on the entire surface of the substrate SUB, and then the light-shielding layer is patterned using photolithography and etching processes with a first mask. Thus, the light-shielding layer LS is formed on the portion of the substrate SUB that requires light protection. Then, a buffer layer BUF covering the light-shielding layer LS is formed on the substrate SUB.

[0139] Next, refer to Figures 11 to 14 The active layer ACT is formed on the buffer layer BUF using the second mask process M2, and a molybdenum-titanium layer MoTi is formed on the active layer.

[0140] In this regard, a halftone mask or a diffraction slit mask can be used as the second mask. A photoresist pattern with a first vertical dimension and a second vertical dimension is formed on the buffer layer BUF using a photolithography process with the second mask. In the portion where only the active layer ACT will be formed, a first photoresist region with a first vertical dimension corresponding to the halftone or diffraction portion of the second mask is formed. In the portion where the molybdenum-titanium layer MoTi will be formed, a second photoresist region with a second vertical dimension (larger than the first vertical dimension) corresponding to the light-shielding portion of the second mask is formed. In the portions where both the active layer and the molybdenum-titanium layer are to be removed, no photoresist is formed in a manner corresponding to the light-transmitting portion of the second mask. The molybdenum-titanium layer and the underlying active layer are patterned using an etching process that uses the photoresist pattern as a mask, such that the active layer ACT and the upper molybdenum-titanium layer have the same pattern. The active layer and the molybdenum-titanium layer can be simultaneously etched using a wet etching process with OZ acid.

[0141] Next, refer to Figure 11 and Figure 15 The gate insulating layer GI is formed on the molybdenum-titanium layer MoTi using the third mask process M3.

[0142] In this regard, the gate insulating layer GI is not patterned. Therefore, no foreign matter is generated due to the etching of the gate insulating layer GI. In subsequent processes, process defects such as short circuits between electrodes caused by foreign matter can be suppressed.

[0143] Next, refer to Figure 11 and Figure 16 The fourth mask process M4 is used to form contact holes (CNTs) that extend through the molybdenum-titanium layer (MoTi) and the gate insulating layer (GI).

[0144] Next, refer to Figure 11 and Figure 17 The gate metal layer GM is formed on the top surface of the active layer, the top surface of the molybdenum-titanium layer, and the top surface of the gate insulating layer using the fifth mask process M5.

[0145] In other words, within the contact hole region CNT, the molybdenum-titanium layer MoTi and the gate metal layer GM are in contact with each other. Within the contact hole region CNT, the gate metal layer GM and the sidewalls and bottom of the molybdenum-titanium layer MoTi, corresponding to the sidewalls at the bottom of the active layer ACT, are in contact.

[0146] Subsequently, the passivation layer PAS covering the gate metal layer GM and the gate insulating layer GI is formed using the sixth mask process M6.

[0147] Using the manufacturing process described above, the branch line BL can be configured such that the gate metal layer GM contacts the molybdenum-titanium layer MoTi in the contact hole region CNT, and the dual line, namely the active layer and the molybdenum-titanium layer, can extend from the contact hole CNT to the channel BACT that drives the thin film transistor Tdr.

[0148] Therefore, the power from the power line VDD / Ref is conducted through the gate metal layer GM from the contact hole CNT to the molybdenum-titanium layer MoTi. When the power is conducted through the molybdenum-titanium layer MoTi to the channel BACT of the driving thin-film transistor Tdr, power is supplied from the power line VDD / Ref to the driving thin-film transistor Tdr.

[0149] As described above, according to this disclosure, an organic light-emitting diode (OLED) display device can reduce the number of contact holes, thereby increasing the aperture ratio in a structure where the power lines VDD / Ref are branched and power is supplied to the thin-film transistor Tdr through the branched lines. Furthermore, a method for manufacturing the device can also be provided.

[0150] In other words, in the organic light-emitting OLED display device according to the present disclosure, in the branch line BL that connects the power line VDD / Ref and the driving thin film transistor Tdr to each other, the contact hole CNT is not formed adjacent to the driving thin film transistor Tdr, but is formed only adjacent to the power line VDD / Ref, so that the number of contact holes CNT per pixel can be reduced.

[0151] Furthermore, according to this disclosure, when fabricating the branch line BL connecting the power line VDD / Ref and the driving thin-film transistor Tdr, the gate metal layer GM connected to the power line VDD / Ref contacts the molybdenum-titanium layer MoTi in the contact hole region CNT. The active layer ACT and the molybdenum-titanium layer MoTi, as a dual-line structure, extend from the contact hole CNT to the driving thin-film transistor Tdr. Therefore, power from the power line VDD / Ref is supplied to the channel of the driving thin-film transistor Tdr through the molybdenum-titanium layer MoTi, which contacts the gate metal layer GM in the contact hole region CNT.

[0152] Although embodiments of the present disclosure have been described in more detail with reference to the accompanying drawings, the present disclosure is not necessarily limited to these embodiments. Various modifications can be made to the present disclosure without departing from the technical spirit of the present disclosure. Therefore, the embodiments disclosed herein are not intended to limit the technical concept of the present disclosure, but rather to describe the present disclosure. The scope of the technical spirit of the present disclosure is not limited by the embodiments. Therefore, it should be understood that the embodiments described above are illustrative and not restrictive in all respects. The scope of protection of the present disclosure should be interpreted by the claims, and all technical concepts within the scope of the present disclosure should be interpreted as including within the scope of the present disclosure.

Claims

1. An organic light emitting display apparatus comprising: a light blocking layer disposed on a substrate; a buffer layer disposed on the light blocking layer; an active layer disposed on the buffer layer; a first metal layer disposed on and contacting the active layer; and a gate insulating layer disposed on the first metal layer, wherein a contact hole is formed in the first metal layer and the gate insulating layer and in a region overlapping the light blocking layer, and wherein the active layer and the first metal layer extend from the contact hole to a channel of a thin film transistor. The organic light emitting display apparatus further comprises a power line configured to provide power to the thin film transistor, and 2. The organic light emitting display device according to claim 1, wherein, wherein the active layer and the first metal layer form a branch line for connecting the power line to the thin film transistor. The first metal layer comprises molybdenum-titanium that is an alloy of molybdenum and titanium.

3. The organic light emitting display device according to claim 1, wherein, The organic light emitting display apparatus further comprises a gate metal layer disposed on the active layer, the first metal layer, and the gate insulating layer to contact the active layer and the first metal layer in the contact hole.

4. The organic light emitting display device according to claim 2, wherein, The active layer and the first metal layer extend from the contact hole and connect to a channel of a metalized first active layer comprising the thin film transistor.

5. The organic light emitting display device according to claim 1, wherein, A passivation film is disposed on portions of the active layer and the first metal layer extending from the contact hole to the thin film transistor.

6. The organic light emitting display device according to claim 1, wherein, A stack of the light blocking layer, the buffer layer, the active layer, and the first metal layer forms a first capacitor.

7. The organic light emitting display device according to claim 1, wherein, The buffer layer has a thickness of 4000 angstroms.

8. The organic light emitting display device according to claim 7, wherein, A stack of the gate metal layer, the gate insulating layer, and the first metal layer forms a second capacitor.

9. The organic light emitting display device according to claim 4, wherein, The gate insulating layer has a thickness of 1500 angstroms.

10. The organic light emitting display device according to claim 9, wherein, The thin film transistor comprises:

11. The organic light emitting display device according to claim 1, wherein, the substrate; the light blocking layer disposed on the substrate; the buffer layer disposed on the light blocking layer; a first active layer disposed on the buffer layer; a second active layer disposed on the first active layer such that portions of the first active layer are exposed; the gate insulating layer disposed on the first active layer and the second active layer; a gate electrode disposed on the gate insulating layer to expose portions of the gate insulating layer; an interlayer insulating layer disposed on the gate insulating layer to cover the gate electrode; a source electrode and a drain electrode connected to a source region and a drain region of the first active layer via a source contact hole and a drain contact hole through the interlayer insulating layer and the gate insulating layer, respectively; and a passivation layer disposed on the interlayer insulating layer to cover the source electrode and the drain electrode, wherein the first active layer extends from the thin film transistor and connects to the active layer and contacts the first metal layer disposed on the active layer. The first active layer is a metalized semiconductor layer and the active layer is a non-conductor.

12. The organic light emitting display device according to claim 11, wherein, The first active layer has a lower mobility than the second active layer and is thicker than the second active layer.

13. The organic light emitting display device according to claim 11, wherein, ​ 14. A method for manufacturing an organic light emitting display device, wherein, The organic light emitting display device includes a branch line branched from a power line for supplying power to a thin film transistor, wherein the branch line connects the power line and the thin film transistor to each other, wherein the thin film transistor includes a source electrode, a drain electrode, a channel, and a gate electrode, wherein the method comprises: (a) forming a light blocking layer on a substrate such that portions of the substrate are exposed; (b) forming a buffer layer on the exposed portions of the substrate and on a top surface of the light blocking layer; (c) forming an active layer on the buffer layer; (d) forming a first metal layer on the active layer, the first metal layer contacting the active layer; (e) forming a gate insulating layer on the active layer or on the first metal layer; (f) forming a contact hole through the first metal layer and the gate insulating layer in a region overlapping the light blocking layer; and (g) forming a gate metal layer on the active layer, the first metal layer, and the gate insulating layer, wherein the first metal layer contacts the gate metal layer in the contact hole, and wherein the active layer and the first metal layer extend from the contact hole to a channel of the thin film transistor.

15. The method of claim 14, wherein, The active layer and the first metal layer are formed using a dual deposition process.

16. The method of claim 14, wherein, The active layer and the first metal layer are formed by a single mask process using a half-tone exposure mask or a diffraction exposure mask.

17. The method of claim 14, wherein, A sidewall and a bottom of the gate metal layer contact the first metal layer in the contact hole overlapping the light blocking layer.

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