Array substrate, manufacturing method thereof and display panel

By forming nano-scale pits on the glass substrate and forming a metal layer in the corresponding area, the problem of poor adhesion between copper and the glass substrate is solved, achieving better adhesion and higher display panel yield.

CN114141705BActive Publication Date: 2025-10-17BEIHAI HKC OPTOELECTRONICS TECH CO LTD +1
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Patent Information

Application Number
CN202111430612.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2021-11-29
Publication Date
2025-10-17
Estimated Expiration
2041-11-29

AI Technical Summary

Technical Problem

In the prior art, the adhesion between copper and the glass substrate is poor, resulting in the presence of a transition layer that increases the complexity of the patterned metal layer, making etching defects more likely to occur, and affecting the yield of the display panel.

Method used

A plurality of nanometer-scale pits are formed on a glass substrate, and a metal layer is formed in the corresponding area. The contact area and adhesion between the metal layer and the glass substrate are increased by the nanometer-scale pits, and the transition layer is eliminated.

Benefits of technology

The adhesion between the metal layer and the glass substrate is improved, the etching defects are reduced, and the yield rate of the display panel is improved.

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Abstract

The application discloses an array substrate, a manufacturing method thereof and a display panel. The manufacturing method comprises the following steps: providing a glass substrate; forming a plurality of nanoscale pits on the glass substrate; forming a metal layer on the glass substrate corresponding to the nanoscale pits; and forming an array substrate. The adhesion between the metal layer and the glass substrate is improved by the above method.
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Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to an array substrate, a manufacturing method thereof and a display panel. BACKGROUND

[0002] With the gradual maturity of display technology, people have higher requirements for liquid crystal display: high resolution, large size, high refresh rate, etc. Nowadays, the mainstream aluminum wire as the metal wiring in the display panel has been difficult to realize the high resolution, large size, high refresh rate, etc. of the liquid crystal display. The industry gradually develops copper with better conductivity to replace aluminum. Compared with aluminum, copper has better conductivity, which can improve the delay problem of large-size liquid crystal display circuit and improve the refresh rate.

[0003] However, the adhesion of copper to the glass substrate is poor, and a transition layer needs to be prepared between the glass substrate and the copper metal layer. The transition layer is usually made of metals such as molybdenum and titanium, which have good adhesion to copper and glass substrates. However, the presence of the transition layer increases the complexity of the patterned metal layer, and various etching defects (such as over-etching, incomplete etching, transition layer residue, etc.) are prone to occur, resulting in a decrease in yield. Under the condition of ensuring the good adhesion of the metal layer to the glass substrate, canceling the transition layer has always been a difficult problem to overcome in the industry. SUMMARY

[0004] The purpose of the present application is to provide an array substrate, a manufacturing method thereof and a display panel, to improve the adhesion between the metal layer and the glass substrate.

[0005] The present application discloses a manufacturing method of an array substrate, comprising the steps of:

[0006] providing a glass substrate;

[0007] forming a plurality of nanoscale pits on the glass substrate;

[0008] forming a metal layer on the glass substrate corresponding to the nanoscale pits;

[0009] forming an array substrate.

[0010] Optionally, in the step of forming a plurality of nanoscale pits on the glass substrate, the step comprises:

[0011] providing a hydrogen fluoride solution;

[0012] spraying the hydrogen fluoride solution onto the glass substrate;

[0013] After a predetermined time, the glass substrate forms a plurality of nanoscale pits;

[0014] cleaning the glass substrate.

[0015] Optionally, the step of spraying the hydrogen fluoride solution onto the glass substrate comprises:

[0016] A high-speed airflow is provided;

[0017] The hydrogen fluoride solution is sprayed through a nozzle under the action of the high-speed airflow;

[0018] Nanoscale hydrogen fluoride droplets are formed and sprayed onto the glass substrate.

[0019] Optionally, the step of spraying the hydrogen fluoride solution through a nozzle under the action of a high-speed airflow comprises:

[0020] A heating unit is arranged at the nozzle, and the hydrogen fluoride solution is sprayed through the nozzle after being heated under the action of the high-speed airflow.

[0021] Optionally, the step of spraying the hydrogen fluoride solution onto the glass substrate comprises:

[0022] The non-bonding area of the glass substrate is shielded;

[0023] Only the bonding area of the glass substrate is sprayed with the hydrogen fluoride solution.

[0024] Optionally, the step of shielding the non-bonding area of the glass substrate comprises:

[0025] A photoresist is applied to the glass substrate;

[0026] The photoresist of the bonding area of the glass substrate is removed after exposure and development;

[0027] The photoresist corresponding to the non-bonding area of the glass substrate is retained.

[0028] The application also discloses an array substrate comprising a glass substrate and a metal layer arranged on the glass substrate, wherein the array substrate is formed by the method for manufacturing an array substrate described above, the glass substrate is provided with nanoscale pits, the metal layer is arranged corresponding to the area of the nanoscale pits, and the metal layer is in direct contact with the glass substrate.

[0029] Optionally, the radius of the nanoscale pits is between 10 nm and 50 nm, and the density of the nanoscale pits is 100-1000 per square micron.

[0030] Optionally, the display panel is divided into a display area and a non-display area, the non-display area comprises a bonding area, and the glass substrate is provided with nanoscale pits only corresponding to the bonding area.

[0031] The application further discloses a display panel comprising a color film substrate and the array substrate.

[0032] Compared with the scheme of using a transition layer to improve the adhesion between the metal layer and the glass substrate, the application forms a plurality of nanoscale pits on the glass substrate to micropattern the surface of the glass substrate, so that the contact area between the metal layer and the glass substrate is larger when the metal layer is deposited, thereby improving the adhesion between the metal layer and the glass substrate. Moreover, the nanoscale pits form a nanoscale uneven shape on the surface of the glass substrate, so that the adhesion between the metal layer and the glass substrate is stronger after the metal layer fills the pits corresponding to the pits, so that the metal layer still maintains good adhesion with the glass substrate even under external force. BRIEF DESCRIPTION OF DRAWINGS

[0033] The accompanying drawings included to provide a further understanding of the embodiments of the application and constitute a part of the specification, illustrate embodiments of the application and together with the text description serve to explain the principles of the application. Obviously, the drawings in the following description are only some embodiments of the application, and those skilled in the art can obtain other drawings according to these drawings without creative labor. In the drawings:

[0034] Figure 1 is a schematic diagram of the steps of the manufacturing method of the array substrate of the first embodiment of the application;

[0035] Figure 2 is a schematic diagram of the steps of the manufacturing method of the array substrate of the second embodiment of the application;

[0036] Figure 3 is a schematic diagram of the manufacturing process of the first array substrate of the second embodiment of the application;

[0037] Figure 4 is a schematic diagram of the manufacturing process of the second array substrate of the second embodiment of the application;

[0038] Figure 5 is a schematic diagram of the manufacturing equipment of the array substrate of the second embodiment of the application;

[0039] Figure 6 is a schematic diagram of the array substrate of the second embodiment of the application;

[0040] Figure 7 is a schematic diagram of the steps of the manufacturing method of the array substrate of the third embodiment of the application;

[0041] Figure 8 is a schematic diagram of the display panel of the third embodiment of the application;

[0042] Figure 9 is a schematic view of a display panel of the present application.

[0043] Wherein, 1, array substrate; 11, hydrogen fluoride solution; 12, high-speed airflow; 13, nozzle; 14, heating unit; 15, hydrogen fluoride mist droplet; 16, cleaning area; 20, glass substrate; 21, metal layer; 22, nanoscale pits; 25, binding area; 30, processing equipment; 31, nozzle device; 32, bearing table; 33, cleaning device; 34, process machine; 100, display panel; 111, color film substrate. DETAILED DESCRIPTION

[0044] It should be understood that the terms, specific structures and functional details used herein are only for the purpose of describing specific embodiments, and are representative, but the present application can be embodied in many alternative forms, and should not be interpreted as being limited to the embodiments described herein.

[0045] In the description of the present application, the terms "first", "second" are only for the purpose of description, and should not be understood as indicating relative importance, or implying the number of the indicated technical features. Therefore, unless otherwise specified, the features defined with "first", "second" can explicitly or implicitly include one or more of the features; the meaning of "multiple" is two or more. The term "comprising" and any variation thereof means non-exclusive inclusion, and one or more other features, integers, steps, operations, units, components and / or combinations thereof can exist or be added.

[0046] In addition, the terms indicating the orientation or positional relationship of "center", "transverse", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like are described based on the orientation or relative position relationship shown in the drawings, and are only for the convenience of the simplified description of the present application, and do not indicate that the indicated device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0047] In addition, unless otherwise specified and limited, the terms "mounting", "connecting", "connection" should be broadly understood, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0048] The present application will be described in detail below with reference to the accompanying drawings and optional embodiments.

[0049] Embodiment one:

[0050] As Figure 1 shown, as the first embodiment of the present application, a manufacturing method of an array substrate is disclosed, the steps of which include:

[0051] S1: providing a glass substrate;

[0052] S2: forming a plurality of nano-scale pits on the glass substrate;

[0053] S3: forming a metal layer on the glass substrate corresponding to the nano-scale pits;

[0054] S4: forming an array substrate.

[0055] Compared with the scheme of using a transition layer to improve the adhesion between the metal layer and the glass substrate, the present application forms a plurality of nano-scale pits on the glass substrate to micro-pattern the surface of the glass substrate. When the metal layer is deposited, the contact area between the metal layer and the glass substrate is larger, so that the adhesion between the metal layer and the glass substrate is better. Moreover, the nano-scale pits form a nano-scale uneven shape on the surface of the glass substrate, so that the adhesion between the metal layer and the glass substrate is stronger after the metal layer fills the pits corresponding to the pits. Even if the metal layer is subjected to external force, the adhesion between the metal layer and the glass substrate is still good.

[0056] It should be noted that the metal layer refers to a metal layer made of copper material. Of course, the glass substrate with nano-scale pits can also be used to form a metal layer made of aluminum material or other materials, which belongs to the protection scope of the present application.

[0057] Specifically, how to form the nano-scale pits is provided below. In the step of S2: forming a plurality of nano-scale pits on the glass substrate, it includes:

[0058] S21: providing a hydrogen fluoride solution;

[0059] S22: spraying the hydrogen fluoride solution onto the glass substrate;

[0060] S23: after a predetermined time, the glass substrate forms a plurality of nano-scale pits;

[0061] S24: cleaning the glass substrate.

[0062] In this embodiment, mainly using hydrogen fluoride solution and silicon dioxide in glass substrate oxidation reaction, after the reaction to generate silicon tetrafluoride gas and water, the specific reaction process is: SiO2(s) + 4HF(aq) ===== SiF4(g)↑+ 2H2O, silicon tetrafluoride gas directly diffuses in the air, and water can be realized through subsequent cleaning steps, that is, silicon tetrafluoride gas and water will not be deposited on the glass substrate, resulting in glass substrate impurities. It should be noted that the hydrogen fluoride solution here refers to a mixed solution of hydrogen fluoride and water, not a pure hydrogen fluoride solution.

[0063] Of course, in addition to using hydrogen fluoride solution to etch the glass substrate to form a nano-scale pit, a sandblasting method can also be used to form a plurality of nano-scale pits on the glass substrate.

[0064] The present application mainly takes the method of using hydrogen fluoride solution to etch the glass substrate to form a nano-scale pit as an example for further description. In S22: the step of spraying the hydrogen fluoride solution onto the glass substrate, it includes:

[0065] S221: providing a high-speed airflow;

[0066] S222: spraying the hydrogen fluoride solution through the nozzle under the action of the high-speed airflow;

[0067] S223: forming a nano-scale hydrogen fluoride mist droplet, which is sprayed onto the glass substrate.

[0068] In order to form a nano-scale pit on the glass substrate, hydrogen fluoride solution cannot be directly used to etch the glass substrate. It is necessary to use a spraying method, preferably, the hydrogen fluoride solution is formed into a nano-scale hydrogen fluoride mist droplet by spraying, which falls on the glass substrate to etch the glass substrate and form a nano-scale pit. Moreover, a high-speed airflow is used in the spraying process, generally an inert gas such as nitrogen. Under the action of high-speed nitrogen, the hydrogen fluoride solution is sprayed from the nozzle to form a nano-scale hydrogen fluoride mist droplet. It should be noted that the size of the nano-scale hydrogen fluoride mist droplet will directly affect the size of the nano-scale pit, which will be described in detail in the next embodiment.

[0069] Optionally, in S222: the step of spraying the hydrogen fluoride solution through the nozzle under the action of the high-speed airflow, it includes:

[0070] S2221: the nozzle is provided with a heating unit, and the hydrogen fluoride solution is sprayed after being heated through the nozzle under the action of the high-speed airflow.

[0071] In combination Figure 3It can be seen that the heating unit 14 can be an electromagnetic heating unit 14, which heats the mixture of hydrogen fluoride and nitrogen gas, and enhances the flowability and energy of the mixture through heating, so that the mixture is more easily sprayed into atomized droplets and has a larger range. In this embodiment, the radius and density of the hydrogen fluoride mist droplets can be controlled by controlling the flow rate of the hydrogen fluoride solution, the nitrogen acceleration, the heating temperature, the nozzle diameter, etc. Uniform deposition of the hydrogen fluoride mist droplets on the glass substrate can also be achieved, and uniform arrangement of the nanoscale pits on the glass substrate can also be achieved.

[0072] Embodiment two

[0073] As Figure 2 As shown in the schematic diagram of the method for manufacturing an array substrate according to the second embodiment of the present application, a method for manufacturing an array substrate is disclosed, which comprises the following steps:

[0074] A: providing a glass substrate, a hydrogen fluoride solution and a high-speed nitrogen gas flow, respectively;

[0075] B: spraying the hydrogen fluoride solution after heating through a nozzle under the action of the high-speed nitrogen gas flow;

[0076] C: forming nanoscale hydrogen fluoride mist droplets, which are sprayed onto a corresponding area of the glass substrate, the area including a bonding area;

[0077] D: after a preset time, forming a plurality of nanoscale pits on the glass substrate;

[0078] E: forming a metal layer on the area of the glass substrate corresponding to the nanoscale pits;

[0079] F: forming an array substrate.

[0080] As Figure 3 As shown in the schematic diagram of the method for manufacturing an array substrate, the hydrogen fluoride solution 11 is sprayed at high speed under the action of the high-temperature high-speed nitrogen gas flow 12 through the nozzle 13, and the high-speed hydrogen fluoride-nitrogen gas mixture is rapidly heated by the electromagnetic heating unit 14 at the position of the nozzle, so as to improve the initial energy of the hydrogen fluoride-nitrogen gas mixture sprayed out of the nozzle, so that it can better form nanoscale hydrogen fluoride mist droplets 15. The size and density of the hydrogen fluoride mist droplets 15 depend on the flow rate of the hydrogen fluoride solution, the nitrogen acceleration, the heating temperature, the nozzle diameter, etc.

[0081] As Figure 4 As shown, below the spraying area, the hydrogen fluoride mist droplets 15 impact on the glass substrate 20, and the hydrogen fluoride mist droplets 15 deposited on the glass substrate undergo a chemical reaction, and nanoscale pits 22 (combined with the pits 21) are formed on the glass substrate 20. Figure 6After the preset spraying time, the cleaning step is needed, and the corresponding glass substrate 20 is moved to the cleaning area 16 at a certain line speed, and the plasma cleaning is generally used, which can not only flush away the reaction product, but also remove the unreacted hydrogen fluoride droplets to terminate the reaction.

[0082] The size of the nanoscale pits 22 is directly related to the size of the hydrogen fluoride atomized droplets 15. For example, in the case of complete reaction of the hydrogen fluoride (HF) atomized droplets deposited on the glass substrate, the relationship between the size of the nanoscale pits R and the radius r of the atomized droplets can be derived as follows:

[0083] The number of moles of HF in one atomized droplet of HF:

[0084] The number of moles of SiO2 in one nanoscale pit:

[0085] According to the reaction formula SiO2(s)+4HF(aq)===SiF4(g)↑+2H2O(l), HF and SiO2 react in a ratio of 4:1, so 4n(SiO2)=n(HF), that is,

[0086]

[0087] where r is the radius of the HF atomized droplet, R is the radius of the nanoscale pit, ρ(SiO2) and ρ(HF) are the densities of SiO2 and HF, respectively, M(SiO2) and M(HF) are the molar masses of SiO2 and HF, respectively, and T% is the volume percentage of HF in the droplet. The relationship between the radius R of the nanoscale pit and the radius r of the hydrogen fluoride droplet can be obtained by the above formula. Therefore, to control the size of the nanoscale pit, the size of the HF atomized droplet should be strictly controlled.

[0088] In order to achieve a strong adhesion between the metal layer, for example, a copper metal layer, and the glass substrate, the density of the nanoscale pits should be 100 to 1000 nanoscale pits per square micron. The volume percentage of HF in the HF droplets is calculated to be 80%. The nanoscale pits of 10-50 nm are calculated to have a hydrogen fluoride atomized droplet radius of 14.98-74.9 nm. In the case of a determined device, the hydrogen fluoride atomized droplets are atomized droplets, and the size and density thereof depend on the flow rate of the hydrogen fluoride solution, the nitrogen acceleration, the heating temperature, the nozzle diameter, and the like. The radius of the hydrogen fluoride atomized droplets 15 is controlled by the above parameters, and the four factors interact with each other. Only three parameters are fixed, and the range of the remaining one parameter is adjusted to give the droplet radius in the range of 14.9-74.9 nm. First, the device is determined, and then the approximate range of each parameter is determined based on the characteristics of the device itself under the initial process conditions. Then, three parameters are fixed, and the range of the remaining one parameter is adjusted to accurately adjust the droplet radius in the range of 14.9-74.9 nm.

[0089] It should be noted that the shape of the nanoscale pits is exemplified by a hemisphere pit with a radius R, and in practice, the shape of the nanoscale pits is not limited. The nanoscale pits can be conical pits, concave square pits, and the like. Various shapes of nanoscale pits that can increase the contact area between the metal layer and the glass substrate are suitable for the present application.

[0090] As shown in Figure 5 , the present application also discloses a processing device 30 of a display panel, which uses the above-mentioned manufacturing method of an array substrate. The processing device includes a nozzle device 31 for spraying a hydrogen fluoride solution, a support table 32 for supporting a glass substrate corresponding to the nozzle device, a cleaning device 33 for cleaning the glass substrate, and a process machine table 34 for depositing a metal layer on the glass substrate. The nozzle device 31 can be the device in the above-mentioned Figure 3 and Figure 4 . The process machine table can be used to form a display panel and does not only include a metal layer that can be deposited on a glass substrate.

[0091] As shown in Figure 6 , the present application discloses an array substrate formed by the process, which includes a glass substrate 20 and a metal layer 21 disposed on the glass substrate. The glass substrate 20 is provided with nanoscale pits 22, and the metal layer 21 is provided corresponding to the region of the nanoscale pits 22, and the metal layer 21 is in direct contact with the glass substrate 20.

[0092] The present application forms a plurality of nanoscale pits on a glass substrate to micropattern the surface of the glass substrate, so that the contact area between the metal layer and the glass substrate is larger when the metal layer is deposited, thereby making the adhesion between the metal layer and the glass substrate better. Moreover, the nanoscale pits form a nanoscale uneven shape on the surface of the glass substrate, so that the adhesion between the metal layer and the glass substrate is stronger after the metal layer fills the pits corresponding to the pits, so that even under the action of external force, the metal layer still maintains good adhesion with the glass substrate.

[0093] The radius of the nanoscale pits is between 10 nm and 50 nm, and the density of the nanoscale pits is 100 per square micrometer to 1000 per square micrometer. It should be noted that the arrangement of the nanoscale pits is not limited here and can be uniform or non-uniform. In general, uniform distribution of nanoscale pits is better. Therefore, only the number of nanoscale pits per square micrometer is required to be limited here.

[0094] Embodiment three:

[0095] As shown in Figure 7 As a third embodiment of the present application, the present application also discloses a manufacturing method of an array substrate, which provides a hydrogen fluoride solution to form nanoscale pits. Based on the above two embodiments, the present embodiment focuses on that the glass substrate can be regionally divided and a plurality of pits are provided on the glass substrate in the required region.

[0096] As shown in Figure 7 As a first manufacturing method of an array substrate of embodiment three, in the step of S222: spraying the hydrogen fluoride solution onto the glass substrate, the step comprises:

[0097] S2221: shielding the non-bonding area of the glass substrate;

[0098] S2221: spraying the hydrogen fluoride solution only to the bonding area on the glass substrate.

[0099] The bonding area corresponds to the metal layer which needs to be bonded and connected with an external flexible circuit board or COF (chip on filter), and after the connection, the circuit board and the glass substrate are connected through the metal layer and the glass substrate. The adhesion of the unit contact area between the metal layer and the glass substrate is the inherent property of the two materials, and the adhesion does not change when the material does not change. The existence of the nanoscale pits increases the contact area between the metal layer and the glass substrate, so the overall adhesion between the metal layer and the glass substrate is increased. At the same time, the existence of the nanoscale pits makes the metal layer and the glass substrate present a kind of inlaid contact form, which effectively prevents the metal thin film from being pulled off horizontally.

[0100] The above specific implementation, in S2221: the step of shielding the non-bonding area of the glass substrate, comprises:

[0101] coating photoresist on the glass substrate;

[0102] removing the photoresist of the bonding area of the glass substrate after exposure and development;

[0103] corresponding to the photoresist of the non-bonding area of the glass substrate.

[0104] By coating photoresist on the glass substrate, removing the photoresist of the bonding area by exposure and development, and retaining the photoresist of the non-bonding area, the glass substrate corresponding to the non-bonding area will not be in contact with the nanoscale mist droplets of hydrogen fluoride in the process of spraying nanoscale mist droplets of hydrogen fluoride to the glass substrate, thereby realizing nanoscale pit processing only on the glass substrate of the bonding area. Furthermore, in the bonding area, only the area of the bonding area that needs to form metal tracks is subjected to nanoscale pit processing. Correspondingly, after depositing the metal layer, the metal layer needs to be etched away that is not needed when patterning the metal layer. Correspondingly, the glass substrate at this position is not provided with nanoscale pits, and the etching can be cleaner and without residue. The non-bonding area here is defined as the area on the glass substrate other than the bonding area, including part of the display area and the non-display area.

[0105] As Figure 8 For the array substrate 1 corresponding to the process, it comprises a glass substrate 20 and a metal layer 21 provided on the glass substrate 20, the glass substrate 20 is provided with nanoscale pits 22, the metal layer 21 is provided corresponding to the area of the nanoscale pits 22, and the metal layer 21 is in direct contact with the glass substrate 20. The display panel is divided into a display area and a non-display area, the non-display area comprises a bonding area 25, and the glass substrate 20 is only provided with nanoscale pits 22 corresponding to the bonding area 25.

[0106] Based on the second variation of the third embodiment, the glass substrate of the display panel is generally formed with a gate of a thin film transistor, a scan line, etc. The present application can use the mask of the first metal layer to pattern a photoresist on the glass substrate, and then perform nanoscale pit processing on the glass substrate corresponding to the gate and the scan line, and then remove the photoresist. After the metal layer is deposited, the metal layer to be removed is not provided with a nanoscale pit on the underlying glass substrate during the process of patterning the metal layer, so as not to affect etching and not to cause etching residue to affect performance. Specifically, the structure of the display panel includes a glass substrate and a metal layer disposed on the glass substrate, the glass substrate is provided with a nanoscale pit, the metal layer is provided corresponding to the nanoscale pit, and the metal layer is in direct contact with the glass substrate. The metal layer includes a gate, a scan line, etc. The corresponding nanoscale pit is disposed under the gate and the scan line, and other areas are not provided. The gate and the scan line of the second variation can be combined with the nanoscale pit design of the binding area of the first variation.

[0107] As shown in Figure 9 The present application discloses a display panel, which includes a color filter substrate 111 and an array substrate 1. The color filter substrate 111 is provided in a box with the array substrate 1. The array substrate 1 can be formed by the manufacturing method of any of the above embodiments. The array substrate mentioned in the present application is not limited, for example, the array substrate of the COA (Color Filter on Array) process is also applicable to the present application.

[0108] It should be noted that the limitations of each step involved in the present scheme do not constitute a limitation on the order of the steps without affecting the implementation of the specific scheme. The steps written in the front can be executed first, or executed later, or even executed simultaneously, as long as the scheme can be implemented, it should be considered to belong to the protection scope of the present application.

[0109] It should be noted that the inventive concept of the present application can form a very large number of embodiments, but the length of the application file is limited and cannot be listed one by one. Therefore, on the premise of not conflicting, the above-described embodiments or technical features can be combined to form new embodiments, and the combination of each embodiment or technical feature will enhance the original technical effect

[0110] The technical solution of the present application can be widely used in various display panels, such as TN (Twisted Nematic) display panels, IPS (In-Plane Switching) display panels, VA (Vertical Alignment) display panels, MVA (Multi-Domain Vertical Alignment) display panels, and of course, other types of display panels, such as OLED (Organic Light-Emitting Diode) display panels, which can all be applicable to the above-mentioned solutions.

[0111] The above is a further detailed description of the present application in combination with specific optional embodiments, and cannot be deemed to limit the specific implementation of the present application to these descriptions. For ordinary skilled persons in the technical field to which the present application belongs, some simple deductions or replacements can be made without departing from the concept of the present application, and all of them shall be deemed to fall within the protection scope of the present application.

Claims

1. A method for manufacturing an array substrate, characterized in that: Including steps: providing a glass substrate; forming a plurality of nanoscale pits on the glass substrate; forming a metal layer in an area of ​​the glass substrate corresponding to the nanoscale pits; forming an array substrate; The step of forming a plurality of nanoscale pits on the glass substrate includes: providing a hydrogen monofluoride solution; Providing a high-speed airflow; A heating unit is provided at the nozzle, and the hydrogen fluoride solution is heated by the nozzle under the action of the high-speed airflow and then sprayed out; forming nano-scale hydrogen fluoride droplets, and spraying the nano-scale hydrogen fluoride droplets onto the glass substrate; After a preset time, a plurality of nano-scale pits are formed on the glass substrate; cleaning the glass substrate; The radius of the nanoscale pits is between 10 nanometers and 50 nanometers, and the density of the nanoscale pits is 100-1000 per square micrometer.

2. The method for manufacturing an array substrate according to claim 1, wherein: The step of forming nano-scale hydrogen fluoride droplets and spraying the nano-scale hydrogen fluoride droplets onto the glass substrate comprises: shielding a non-binding area of ​​the glass substrate; The hydrogen fluoride solution is sprayed only onto the bonding area on the glass substrate.

3. The method for manufacturing an array substrate according to claim 2, wherein: The step of shielding the non-binding area of ​​the glass substrate includes: coating a photoresist on the glass substrate; removing the photoresist in the bonding area of ​​the glass substrate after exposure and development; The photoresist corresponding to the non-binding area of ​​the glass substrate remains.

4. An array substrate comprising a glass substrate and a metal layer disposed on the glass substrate, characterized in that: The array substrate is formed using the manufacturing method of the array substrate described in any one of claims 1 to 3 above, wherein nanoscale pits are provided on the glass substrate, the metal layer is provided in an area corresponding to the nanoscale pits, and the metal layer is in direct contact with the glass substrate; the radius of the nanoscale pits is between 10 nanometers and 50 nanometers, and the density of the nanoscale pits is 100-1000 per square micron.

5. The array substrate according to claim 4, wherein: The array substrate is divided into a display area and a non-display area. The non-display area includes a binding area. The glass substrate is provided with nano-scale pits only corresponding to the binding area.

6. A display panel, characterized in that: The invention comprises a color filter substrate and an array substrate according to any one of claims 4 to 5, wherein the color filter substrate and the array substrate are arranged in a box.

Citation Information

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