Perovskite solar cell with ammonium thiocyanate as intermediate layer and preparation method thereof

Abstract

The application discloses a perovskite solar cell with an ammonium thiocyanate intermediate layer and a preparation method. x A hole transport layer is coated on the transparent conductive substrate x An NH4SCN solution is coated on the hole transport layer, annealing is performed, an NH4SCN intermediate layer is formed, a perovskite film is coated on the NH4SCN intermediate layer, a perovskite structured light-absorbing layer is formed, an electron transport layer is prepared on the perovskite structured light-absorbing layer, and an electrode is evaporated on the electron transport layer to form a conductive electrode. The application introduces the NH4SCN intermediate layer, well modifies the hole transport layer / perovskite structured light-absorbing layer interface, reduces the surface defects of the hole transport layer, suppresses carrier recombination, greatly improves the photoelectric performance of the perovskite solar cell, and the introduction of the NH4SCN also reduces the -OH on the surface of the NiO x The application greatly improves the stability of the perovskite solar cell.

Description

Technical Field

[0001] This invention belongs to the field of solar cells, specifically relating to a perovskite solar cell with ammonium thiocyanate as the intermediate layer and its preparation method. Background Technology

[0002] Since the Industrial Revolution, the use of fossil fuels has provided tremendous impetus for human technological development, but it has also brought about environmental problems such as resource depletion and pollution. To solve these problems, the development and utilization of clean and renewable energy sources are essential. Solar energy is inexhaustible, and converting it into electricity is currently a key research direction. At present, Si-based and Cd-based solar cells dominate the global market, but their energy supply is far less than the world's photovoltaic production capacity. Cd-based solar cells also face the problem of limited raw materials. The development and utilization of solar energy seems to have reached a bottleneck, leading to the emergence of perovskite solar cells.

[0003] Research on perovskite solar cells has progressed rapidly, with their photoelectric conversion efficiency increasing dramatically from 3.8% to over 25%. For perovskite solar cells, the hole transport layer significantly influences their efficiency and stability. Reverse-structure perovskite solar cells often utilize NiO. x As an inorganic hole transport layer, but NiO x The presence of numerous hydroxyl groups on the film surface leads to poor film quality and affects contact with the light-absorbing layer of the perovskite structure. Therefore, it is often found in perovskite / NiO... x Intermediate layers are introduced into the interface to improve device performance; P3HT, KCl, etc., are used to treat NiO. x Surface, improved NiO x Thin film quality, but the NiO problem remains unresolved. x The problem of excessive surface hydroxyl groups. Summary of the Invention

[0004] The purpose of this invention is to provide a perovskite solar cell with ammonium thiocyanate as the intermediate layer and a method for its preparation, wherein the method passivates NiO. x / Perovskite layer interface defects improve interface contact quality, suppress interfacial carrier recombination, reduce energy loss, and improve adhesion to NiO x The quality of the perovskite structure light-absorbing layer film is improved, thereby obtaining perovskite solar cells with high photoelectric conversion efficiency and high stability.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A perovskite solar cell with ammonium thiocyanate as the intermediate layer, comprising NiO in the perovskite solar cell. xHole transport layer and perovskite light-absorbing layer, NiO in perovskite solar cells x An NH4SCN interlayer is disposed between the hole transport layer and the perovskite light-absorbing layer.

[0007] Furthermore, the thickness of the NH4SCN interlayer is 2-20 nm, and the NiO layer... x The thickness of the hole transport layer is 5-100 nm.

[0008] Furthermore, the NiO x The hole transport layer is doped with one or more of the following elements: Li, Mg, Cu, K, Na and Cs, and the total mass concentration of the doped elements is less than or equal to 50% of the mass concentration of nickel.

[0009] Furthermore, the perovskite solar cell also includes a conductive substrate, a perovskite light-absorbing layer, an electron transport layer, and a conductive electrode; the conductive substrate and NiO... x The hole transport layer, NH4SCN intermediate layer, perovskite light-absorbing layer, electron transport layer and conductive electrode are arranged sequentially from bottom to top.

[0010] A method for preparing a perovskite solar cell with ammonium thiocyanate as the intermediate layer includes the following steps:

[0011] 1) Preparation of NiO on a transparent conductive substrate x Hole transport layer;

[0012] 2) In NiO x An NH4SCN solution is coated onto the hole transport layer, and after drying, an NH4SCN intermediate layer is formed.

[0013] 3) Coat a perovskite thin film on the NH4SCN intermediate layer to form a perovskite light-absorbing layer, and then prepare an electron transport layer on the perovskite light-absorbing layer.

[0014] 4) Electrodes are deposited on the electron transport layer to form conductive electrodes.

[0015] Furthermore, the solvent used for the NH4SCN solution is ethanol, N,N dimethylformamide, or water.

[0016] Furthermore, the concentration of the NH4SCN solution is 0.05-20.00 mg / mL.

[0017] Furthermore, in step 2), the drying temperature is 80-150℃ and the time is 1-30 min.

[0018] Furthermore, the thickness of the light-absorbing layer in the perovskite structure is 300-500 nm, and the thickness of the electron transport layer is 200-350 nm.

[0019] Furthermore, the specific process of step 1) is as follows: NiO x The precursor solution is sprayed onto a transparent conductive substrate and annealed to obtain NiO. x Hole transport layer;

[0020] The annealing conditions are: temperature 450-550℃, time 25-35min.

[0021] Furthermore, the solvent used for the NH4SCN solution is ethanol, N,N dimethylformamide, or water; the concentration of the NH4SCN solution is 0.05-20.00 mg / mL.

[0022] Further, step 3) includes the following steps: spin-coating a MAPbI3 precursor solution onto an NH4SCN intermediate layer, and then annealing at 95-110℃ for 10-15 min to obtain a perovskite structure light-absorbing layer with a thickness of 300-500 nm.

[0023] PCBM solution was spin-coated onto the perovskite light-absorbing layer, and then annealed at 100-110℃ for 10 min to obtain an electron transport layer with a thickness of 200-350 nm.

[0024] Compared with the prior art, the present invention has the following advantages: The present invention introduces NH4SCN as NiO x The intermediate layer of the perovskite structure light-absorbing layer can passivate interface defects of the hole transport layer / perovskite structure light-absorbing layer and improve NiO x The improved contact quality at the hole transport layer / perovskite structure light-absorbing layer interface significantly enhances the Vo of perovskite solar cells. oc And FF, thus obtaining a high-efficiency solar cell. NH4 + and NiO x Surface-dependent -OH groups bind to the perovskite solar cell, reducing the formation of NiOOH on the hole transport layer surface, thus improving energy level matching and suppressing nonradiative recombination of charge carriers. The open-circuit voltage V of the cell in this invention... oc The fill factor FF and photoelectric conversion efficiency PCE are both relatively high, and the battery maintains high stability even in dark conditions. The battery has good photoelectric performance and stability.

[0025] In this invention, NH4SCN is introduced as NiO. x The perovskite structure light-absorbing layer, as an intermediate layer, significantly improves the film quality of the perovskite layer. The introduction of NH4SCN increases the grain size and crystallinity of the perovskite film surface, and also promotes the longitudinally ordered growth of grains on the perovskite film surface, thereby improving the stability of the perovskite solar cell. The preparation method of this invention is simple and easy to implement.

[0026] Furthermore, NiO is used with one or more of the following elements: Li, Mg, Cu, K, Na, and Cs. x As a hole transport layer, it also improves the conductivity of the hole transport layer and promotes carrier transport. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the perovskite solar cell device structure.

[0028] Figure 2 The NiO prepared according to Example 1 using NH4SCN as the NiO x JV curve of a perovskite solar cell with a perovskite structure light-absorbing layer in the middle layer;

[0029] Figure 3 The NiO prepared according to Example 2 using NH4SCN as the base x JV curve of a perovskite solar cell with a perovskite structure light-absorbing layer in the middle layer;

[0030] Figure 4 The NiO prepared according to Example 4 using NH4SCN as the base x JV curve of a perovskite solar cell with a perovskite structure light-absorbing layer in the middle layer;

[0031] Figure 5 The NiO prepared according to Example 1 using NH4SCN as the NiO x / A graph showing the stability of a perovskite solar cell with a perovskite structure and an intermediate light-absorbing layer under dark conditions.

[0032] In the figure, 1—conductive substrate, 2—NiO x Hole transport layer, 3—NH4SCN intermediate layer, 4—perovskite light-absorbing layer, 5—electron transport layer, 6—conductive electrode. Detailed Implementation

[0033] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below with reference to embodiments. This invention is not limited to the specific examples and embodiments described herein. Any person skilled in the art can easily make further improvements and modifications without departing from the spirit and scope of this invention, all of which fall within the protection scope of this invention. Furthermore, the technical features involved in the various embodiments of this invention described below can be combined with each other as long as they do not conflict with each other.

[0034] A method using ammonium thiocyanate (NH4SCN) as nickel oxide (NiO) x Perovskite solar cells with a perovskite structure and an intermediate layer of light-absorbing layer, including NiO. xHole transport layer 2 and perovskite light-absorbing layer 4, NiO x An NH4SCN intermediate layer 3 is disposed between the hole transport layer 2 and the perovskite structure light-absorbing layer 4.

[0035] Wherein, the NiO x The hole transport layer 2 has a thickness of 5-100 nm.

[0036] The thickness of the NH4SCN intermediate layer 3 is 2-20 nm.

[0037] The NiO x Hole transport layer 2 is doped with one or more of the following elements: Li, Mg, Cu, K, Na and Cs. The total mass concentration of the doped elements is less than or equal to 50% of the mass concentration of nickel.

[0038] See Figure 1 The perovskite solar cell further includes a conductive substrate 1, an electron transport layer 5, and a conductive electrode 6; the conductive substrate 1, NiO x Hole transport layer 2, NH4SCN intermediate layer 3, perovskite structure light-absorbing layer 4, electron transport layer 5, and conductive electrode 6 are arranged sequentially from bottom to top.

[0039] The above-mentioned method for preparing perovskite solar cells includes the following steps:

[0040] 1) Prepare NiO with a thickness of 5-100 nm on a transparent conductive substrate 1 x Hole transport layer 2;

[0041] 2) After thorough drying, in NiO x An NH4SCN solution is coated (spin-coated) onto the hole transport layer 2 and dried at 80-150℃ for 1-30 min to form an ultrathin NH4SCN intermediate layer 3 with a thickness of 2-20 nm.

[0042] The solvent used in the NH4SCN solution is a volatile solvent, preferably ethanol, N,N dimethylformamide (DMF), or water.

[0043] The concentration range of NH4SCN solution is 0.05-20.00 mg / mL.

[0044] 3) Coating a perovskite film on the NH4SCN intermediate layer 3 to form a perovskite structure light-absorbing layer 4 with a thickness of 300-500nm, and then preparing an electron transport layer 5 on the perovskite structure light-absorbing layer 4.

[0045] 4) Electrodes are deposited on the electron transport layer 5 to form conductive electrodes 6.

[0046] This invention is based on NiO xNH4SCN is introduced as an intermediate layer between hole transport layer 2 and perovskite light-absorbing layer 4, removing most of the NiO. x Surface hydroxyl groups, regulating NiO x The Fermi level has enabled a significant improvement in the photoelectric conversion efficiency of perovskite solar cells.

[0047] In this invention, the MAPbI3 precursor solution is prepared by the following process: MAI powder and PbI2 powder are mixed at a mass ratio of 1:1, and then DMF solvent is added. The molar concentration of MAPbI3 is 1 mol / L. The PCBM solution is a chlorobenzene solution of PCBM with a concentration of 20 mg / mL.

[0048] The following are specific examples.

[0049] Example 1

[0050] A method using ammonium thiocyanate (NH4SCN) as NiO x The method for fabricating a perovskite solar cell with a perovskite structure light-absorbing layer intermediate layer includes the following steps:

[0051] (1) NiO x Precursor solution: Nickel acetylacetone and potassium acetate were added to a mixed solution of ethanol and acetonitrile to obtain NiO. x The precursor solution contained ethanol in a volume ratio of 1:19 to acetonitrile, with a total concentration of 0.02 mol / L for nickel and potassium, and an atomic molar ratio of 80:20 for Ni and K.

[0052] NiO was sprayed using an air gun with a 0.3mm nozzle. x The precursor solution was sprayed onto a transparent conductive substrate 1 and annealed at 450°C for 30 min to obtain NiO. x Hole transport layer 2, with a thickness of approximately 30 nm.

[0053] (2) A small amount of 0.20 mg / L NH4SCN ethanol solution was spin-coated onto NiO at a speed of 5000 rpm. x After spin-coating the hole transport layer 2 for 30 seconds and drying it at 90°C for 10 minutes, an NH4SCN intermediate layer 3 with a thickness of approximately 5 nm was obtained.

[0054] (3) A MAPbI3 precursor solution was spin-coated onto the NH4SCN intermediate layer 3 at a speed of 2000 rpm for 8 s. After annealing at 100 °C for 10 min, a perovskite structure light-absorbing layer 4 with a thickness of 350 nm was obtained.

[0055] (4) PCBM solution was spin-coated onto the perovskite structure light-absorbing layer 4 at a speed of 2500 rpm for 30 s, and then annealed at 100 °C for 10 min to obtain an electron transport layer 5 with a thickness of 300 nm.

[0056] (5) An Ag electrode is deposited on the electron transport layer 5 using a vacuum evaporation machine to obtain a conductive electrode 6.

[0057] See Figure 2 It can be seen that the short-circuit current density J of the battery SC Open circuit voltage V OC The parameters such as fill factor FF and photoelectric conversion efficiency PCE are all relatively high, proving that the perovskite solar cells prepared by this method have excellent photoelectric performance.

[0058] Please see Figure 5 As shown in the figure, the battery stability diagram of the battery prepared in Example 1 of the present invention, measured in nitrogen, shows that the battery prepared using the method of the present invention (NH4SCN in the figure) retains more than 80% of its original photoelectric conversion efficiency (PCE) after 2784 hours under dark conditions. In contrast, the control group (i.e., the battery without the NH4SCN interlayer) only retains 63% of its original PCE after 2784 hours under the same conditions. This indicates that the battery prepared using the method of the present invention has significantly improved stability.

[0059] Example 2

[0060] A method using ammonium thiocyanate (NH4SCN) as NiO x The method for fabricating a perovskite solar cell with a perovskite structure light-absorbing layer intermediate layer includes the following steps:

[0061] (1) NiO x Precursor solution: Nickel acetylacetonate, copper acetate monohydrate, lithium acetate, and magnesium acetate tetrahydrate were added to a mixed solution of ethanol and acetonitrile to obtain NiO. x The precursor solution had a volume ratio of ethanol to acetonitrile of 1:19, a total concentration of nickel, copper, lithium and magnesium of 0.02 mol / L, and an atomic molar ratio of Ni:Cu:Li:Mg of 75:10:10:5.

[0062] NiO was sprayed using a 0.3mm nozzle. x The precursor solution was sprayed onto a transparent conductive substrate 1 and annealed at 500°C for 30 min to obtain NiO. x Hole transport layer 2 has a thickness of 28 nm.

[0063] (2) A small amount of 0.50 mg / L NH4SCN ethanol solution was spin-coated onto NiO at a speed of 3000 rpm. xOn the substrate, after spin coating for 20 s and drying at 100 °C for 10 min, an NH4SCN intermediate layer 3 with a thickness of 7 nm was obtained.

[0064] (3) After drying, the MAPbI3 precursor solution was spin-coated on the NH4SCN intermediate layer 3 at a speed of 2000 rpm for 10 s. After annealing at 100℃ for 12 min, a perovskite structure light-absorbing layer 4 with a thickness of 300 nm was obtained.

[0065] (4) PCBM solution was spin-coated onto the perovskite light-absorbing layer 4 at a speed of 2000 rpm for 28 s, and then annealed at 100 °C for 10 min to obtain an electron transport layer 5 with a thickness of 350 nm.

[0066] (5) An Ag electrode is deposited on the electron transport layer 5 using a vacuum evaporation machine to obtain a conductive electrode 6.

[0067] See Figure 3 It can be seen that the short-circuit current density J of the battery SC Open circuit voltage V OC The parameters such as fill factor FF and photoelectric conversion efficiency PCE are all relatively high, proving that the perovskite solar cells prepared by this method have excellent photoelectric performance.

[0068] Example 3

[0069] A method using ammonium thiocyanate (NH4SCN) as NiO x The method for fabricating a perovskite solar cell with a perovskite structure light-absorbing layer intermediate layer includes the following steps:

[0070] (1) NiO x Precursor solution: Nickel acetylacetone, sodium acetate trihydrate, and lithium acetate were added to a mixed solution of ethanol and acetonitrile to obtain NiO. x The precursor solution had a volume ratio of ethanol to acetonitrile of 1:19, a total concentration of nickel, sodium and lithium of 0.02 mol / L, and an atomic molar ratio of Ni:Na:Li of 80:10:10.

[0071] NiO was sprayed using a 0.3mm nozzle. x The precursor solution was sprayed onto a transparent conductive substrate 1 and annealed at 550°C for 25 min to obtain NiO. x Hole transport layer 2 has a thickness of 25 nm.

[0072] (2) A small amount of 2.00 mg / L NH4SCN ethanol solution was spin-coated onto NiO at a speed of 4000 rpm. x On the substrate, spin-coating time was 40s, followed by annealing at 100℃ for 15min to obtain NH4SCN intermediate layer 3 with a thickness of 20nm.

[0073] (3) After drying, the MAPbI3 precursor solution was spin-coated onto the NH4SCN intermediate layer 3 at a speed of 1800 rpm for 9 s. After annealing at 100℃ for 10 min, a perovskite structure light-absorbing layer 4 with a thickness of 400 nm was obtained.

[0074] (4) PCBM solution was spin-coated onto the perovskite structure light-absorbing layer 4 at a speed of 2000 rpm for 32 s, and then annealed at 110 °C for 10 min to obtain an electron transport layer 5 with a thickness of 200 nm.

[0075] (5) An Ag electrode is deposited on the electron transport layer 5 using a vacuum evaporation machine to obtain a conductive electrode 6.

[0076] Example 4

[0077] A method using ammonium thiocyanate (NH4SCN) as NiO x The method for fabricating a perovskite solar cell with a perovskite structure light-absorbing layer intermediate layer includes the following steps:

[0078] (1) NiO x Precursor solution: Nickel acetylacetonate, magnesium acetate tetrahydrate, cesium acetate, sodium acetate trihydrate, and lithium acetate were added to a mixed solution of ethanol and acetonitrile to obtain NiO. x The precursor solution has an ethanol to acetonitrile volume ratio of 1:19, a total concentration of nickel, magnesium, cesium, sodium and lithium of 0.02 mol / L, and an atomic molar ratio of Ni:Mg:Cs:Na:Li of 60:10:10:15:5.

[0079] NiO was sprayed using a 0.3mm nozzle. x The precursor solution was sprayed onto a transparent conductive substrate 1 and annealed at 520°C for 32 min to obtain NiO. x Hole transport layer 2 has a thickness of 26 nm.

[0080] (2) A small amount of 0.05 mg / L NH4SCN ethanol solution was spin-coated onto NiO at a speed of 5000 rpm. x On the substrate, after spin coating for 40 s and drying at 150 °C for 10 min, an NH4SCN intermediate layer 3 with a thickness of 6 nm was obtained.

[0081] (3) After drying, the MAPbI3 precursor solution was spin-coated on the NH4SCN intermediate layer 3 at a speed of 2500 rpm for 6 s. After annealing at 100℃ for 10 min, a perovskite structure light-absorbing layer 4 with a thickness of 500 nm was obtained.

[0082] (4) A ZnO precursor solution was spin-coated onto the perovskite light-absorbing layer 4 at a speed of 2500 rpm for 28 s, followed by annealing at 110 °C for 10 min to obtain an electron transport layer 5 with a thickness of 250 nm.

[0083] (5) An Au electrode is deposited on the electron transport layer 5 using a vacuum evaporation machine to obtain a conductive electrode 6.

[0084] See Figure 4 It can be seen that the short-circuit current density J of the battery SC Open circuit voltage V OC The parameters such as fill factor FF and photoelectric conversion efficiency PCE are all relatively high, proving that the perovskite solar cells prepared by this method have excellent photoelectric performance.

[0085] Example 5

[0086] A method using ammonium thiocyanate (NH4SCN) as NiO x The method for fabricating a perovskite solar cell with a perovskite structure light-absorbing layer intermediate layer includes the following steps:

[0087] (1) NiO x Precursor solution: Nickel acetylacetonate, magnesium acetate tetrahydrate, cesium acetate, potassium acetate, sodium acetate trihydrate, and lithium acetate were added to a mixed solution of ethanol and acetonitrile to obtain NiO. x The precursor solution has an ethanol to acetonitrile volume ratio of 1:19, a total concentration of nickel, magnesium, cesium, potassium, sodium and lithium of 0.02 mol / L, and an atomic molar ratio of Ni:Mg:Cs:K:Na:Li of 75:5:5:5:5:5.

[0088] NiO was sprayed using a 0.3mm nozzle. x The precursor solution was sprayed onto a transparent conductive substrate 1 and annealed at 480°C for 35 min to obtain NiO. x Hole transport layer 2, with a thickness of 100 nm.

[0089] (2) A small amount of 1.50 mg / L NH4SCN-NN dimethylformamide solution was spin-coated onto NiO at a speed of 8000 rpm. x On the substrate, after spin coating for 30 s and drying at 100 °C for 30 min, an NH4SCN intermediate layer 3 with a thickness of 20 nm was obtained.

[0090] (3) A MAPbI3 precursor solution was spin-coated onto the NH4SCN intermediate layer 3 at a speed of 2500 rpm for 8 s. After annealing at 100 °C for 12 min, a perovskite-structured light-absorbing layer 4 with a thickness of 300 nm was obtained.

[0091] (4) PCBM solution was spin-coated onto the perovskite structure light-absorbing layer 4 at a speed of 1800 rpm for 35 s, and then annealed at 110 °C for 10 min to obtain an electron transport layer 5 with a thickness of 300 nm.

[0092] (5) Pt electrodes are deposited on electron transport layer 5 using a vacuum evaporation machine to obtain conductive electrode 6.

[0093] Example 6

[0094] A method using ammonium thiocyanate (NH4SCN) as NiO x The method for fabricating a perovskite solar cell with a perovskite structure light-absorbing layer intermediate layer includes the following steps:

[0095] (1) NiO x Precursor solution: Nickel acetylacetonate, magnesium acetate tetrahydrate, and lithium acetate were added to a mixed solution of ethanol and acetonitrile to obtain NiO. x The precursor solution had a volume ratio of ethanol to acetonitrile of 1:19, a total concentration of nickel, magnesium and lithium of 0.02 mol / L, and an atomic molar ratio of Ni:Mg:Li of 70:20:10.

[0096] NiO was sprayed using a 0.3mm nozzle. x The precursor solution was sprayed onto a transparent conductive substrate 1 and annealed at 450°C for 30 min to obtain NiO. x Hole transport layer 2, with a thickness of 20 nm.

[0097] (2) A small amount of NH4SCN aqueous solution with a concentration of 20.00 mg / L was spin-coated onto NiO at a speed of 5000 rpm. x On the substrate, after spin coating for 40 s and drying at 150 °C for 1 min, an NH4SCN intermediate layer 3 with a thickness of 60 nm was obtained.

[0098] (3) After drying, the MAPbI3 precursor solution was spin-coated onto the NH4SCN intermediate layer 3 at a speed of 2300 rpm for 8 s. After annealing at 95℃ for 15 min, a perovskite structure light-absorbing layer 4 with a thickness of 500 nm was obtained.

[0099] (4) PCBM solution was spin-coated onto the perovskite light-absorbing layer 4 at a speed of 2500 rpm for 25 s, and then annealed at 110 °C for 10 min to obtain an electron transport layer 5 with a thickness of 280 nm.

[0100] (5) Pt electrodes are deposited on electron transport layer 5 using a vacuum evaporation machine to obtain conductive electrode 6.

[0101] This invention NiO xAs a hole transport layer, an NH4SCN intermediate layer is introduced at the interface between the hole transport layer and the perovskite structure light-absorbing layer. NiO x Hole transport layer compared to pure NiO x The hole transport layer exhibits better conductivity, and the NH4SCN interlayer effectively modifies the interface between the hole transport layer and the perovskite structure's light-absorbing layer, reducing surface defects in the hole transport layer and suppressing carrier recombination, thus significantly improving the photoelectric performance of the perovskite solar cell. Furthermore, the introduction of NH4SCN also reduces the NiO content. x The -OH groups on the surface greatly improve the stability of perovskite solar cells.

[0102] The embodiments of the present invention have been described in detail above with reference to the examples. However, the present invention is not limited to the above embodiments. Any changes, modifications, substitutions, combinations, or simplifications made based on the spirit and principle of the technical solution of the present invention should be considered equivalent substitutions, as long as they meet the inventive purpose of the present invention and do not violate the present invention's method of using ammonium thiocyanate (NH4SCN) as NiO. x The methods for preparing perovskite solar cells with a perovskite structure light-absorbing layer in the middle layer are all within the scope of protection of this invention.

Claims

1. A perovskite solar cell with ammonium thiocyanate as the intermediate layer, characterized in that, NiO, including perovskite solar cells x Hole transport layer (2) and perovskite light-absorbing layer (4), NiO of perovskite solar cell x An NH4SCN intermediate layer (3) is provided between the hole transport layer (2) and the perovskite structure light-absorbing layer (4). The NiO x The hole transport layer (2) is doped with one or more of the following elements: Li, Mg, Cu, K, Na and Cs. The total mass concentration of the doped elements is less than or equal to 50% of the mass concentration of nickel.

2. A perovskite solar cell with ammonium thiocyanate as the intermediate layer according to claim 1, characterized in that, The thickness of the NH4SCN intermediate layer (3) is 2-20 nm, and the NiO layer is... x The hole transport layer (2) has a thickness of 5-100 nm.

3. A perovskite solar cell with ammonium thiocyanate as the intermediate layer according to claim 1, characterized in that, The perovskite solar cell further includes a conductive substrate (1), a perovskite light-absorbing layer (4), an electron transport layer (5), and a conductive electrode (6); the conductive substrate (1) and NiO x The hole transport layer (2), the NH4SCN intermediate layer (3), the perovskite light-absorbing layer (4), the electron transport layer (5), and the conductive electrode (6) are arranged sequentially from bottom to top.

4. A method for preparing a perovskite solar cell with ammonium thiocyanate as an intermediate layer as described in any one of claims 1 to 3, characterized in that, Includes the following steps: 1) Preparation of NiO on a transparent conductive substrate (1) x Hole transport layer (2); 2) In NiO x An NH4SCN solution is coated on the hole transport layer (2), and after drying, an NH4SCN intermediate layer (3) is formed. 3) A perovskite film is coated on the NH4SCN intermediate layer (3) to form a perovskite structure light-absorbing layer (4), and then an electron transport layer (5) is prepared on the perovskite structure light-absorbing layer (4). 4) Electrodes are deposited on the electron transport layer (5) to form conductive electrodes (6).

5. The method for preparing a perovskite solar cell with ammonium thiocyanate as an intermediate layer according to claim 4, characterized in that, The solvent used for NH4SCN solution is ethanol, N,N dimethylformamide or water.

6. The method for preparing a perovskite solar cell with ammonium thiocyanate as an intermediate layer according to claim 4, characterized in that, The concentration of NH4SCN solution is 0.05-20.00 mg / mL.

7. The method for preparing a perovskite solar cell with ammonium thiocyanate as an intermediate layer according to claim 4, characterized in that, In step 2), the drying temperature is 80-150℃ and the time is 1-30 min.

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