Semiconductor process furnace

Abstract

The present application discloses a semiconductor process furnace, which includes a furnace tube and a gas supply assembly. The gas supply assembly includes: an inlet pipe, a plurality of gas supply pipes, and a plurality of annular flow equalizing members. One end of the inlet pipe is provided with an air inlet, and one ends of the plurality of gas supply pipes are all communicated with the other end of the inlet pipe. The other ends of the respective gas supply pipes are all provided with gas supply ports, and the plurality of gas supply ports are arranged at intervals along the axial direction of the furnace tube; each of the annular flow equalizing members is arranged inside the furnace tube and is arranged at intervals along the axial direction of the furnace tube. A flow equalizing cavity is arranged inside the annular flow equalizing member, and a plurality of flow equalizing holes are distributed thereon at intervals. The plurality of gas supply ports are communicated with the flow equalizing cavities of the plurality of annular flow equalizing members in one-to-one correspondence. The above-mentioned semiconductor process furnace can solve the problem that the process effect of some wafers is poor due to the uneven distribution of process gas in the current process furnace.

Description

Technical Field

[0001] This application belongs to the field of semiconductor processing technology, and particularly relates to a semiconductor process furnace. Background Art

[0002] During the semiconductor processing, in order to form products with higher quality, in processes such as annealing, it is usually necessary to introduce hydrogen gas or the like to repair internal defects of the wafer. Currently, a process furnace is usually used to accommodate the wafer, and process gas is introduced from the top of the process furnace to repair the wafer. However, during operation, the wafer located at the top of the process furnace will react with the process gas preferentially, which results in a significant reduction in the amount of process gas flowing to the middle part, especially the bottom part of the process furnace, and causes poor process effects for the wafers located at the bottom of the process furnace. Summary of the Invention

[0003] This application discloses a semiconductor process furnace, which can solve the problem that the process effects of some wafers are poor due to uneven distribution of process gas in the current process furnace.

[0004] To solve the above problems, the embodiments of this application are implemented as follows:

[0005] The embodiments of this application provide a semiconductor process furnace, which includes a furnace tube and a gas supply assembly. Among them, the gas supply assembly includes:

[0006] An inlet pipe, a plurality of gas delivery pipes, and a plurality of annular flow equalizing members. One end of the inlet pipe is provided with an air inlet. One ends of the plurality of gas delivery pipes are all communicated with the other end of the inlet pipe. The other ends of the gas delivery pipes are all provided with gas delivery ports. The plurality of gas delivery ports are arranged at intervals along the axial direction of the furnace tube. Each of the annular flow equalizing members is arranged inside the furnace tube and is arranged at intervals along the axial direction of the furnace tube. A flow equalizing cavity is arranged inside the annular flow equalizing member, and a plurality of flow equalizing holes are distributed at intervals thereon. The plurality of gas delivery ports are in one-to-one correspondence and communication with the flow equalizing cavities of the plurality of annular flow equalizing members.

[0007] The embodiments of this application disclose a semiconductor process furnace, which includes a furnace tube and a gas supply assembly. The gas supply assembly is installed on the furnace tube, and the gas supply assembly includes an inlet pipe, a plurality of gas delivery pipes, and a plurality of annular flow equalizing members. The inlet pipe is provided with an air inlet. One ends of the plurality of gas delivery pipes are all communicated with the other end of the inlet pipe. The other ends of the plurality of gas delivery pipes are all provided with gas delivery ports. And the plurality of annular flow equalizing members are all installed in the accommodation cavity of the furnace tube. The plurality of annular flow equalizing members are all provided with flow equalizing cavities, and the plurality of gas delivery ports are in one-to-one correspondence and communication with the flow equalizing cavities of the plurality of annular flow equalizing members.

[0008] Based on the above semiconductor process furnace, process gas can be fed into multiple gas delivery pipes through the gas inlet, and enter the flow equalizing cavities of multiple annular flow equalizing components through multiple gas outlets, and then flow from the multiple flow equalizing holes of each flow equalizing cavity to different regions of the accommodation cavity in the furnace tube respectively. Since the multiple gas outlets are arranged at intervals along the axial direction of the furnace tube, the process gas can be fed into multiple different positions axially in the accommodation cavity of the furnace tube respectively, and under the action of the annular flow equalizing components, the process gas can flow from the same axial position to different radial directions along the radial direction of the furnace tube. In this case, the axial distribution uniformity and circumferential distribution uniformity of the process gas in the accommodation cavity can be improved to ensure that the process effects of each wafer in the accommodation cavity are relatively good as much as possible. Description of the Drawings

[0009] The drawings described herein are used to provide a further understanding of the present application and form a part of the present application. The schematic embodiments of the present application and their descriptions are used to explain the present application and do not constitute an improper limitation to the present application. In the drawings:

[0010] Figure 1 is a schematic structural diagram of the semiconductor process furnace disclosed in the embodiment of the present application;

[0011] Figure 2 is a schematic principle diagram of the gas delivery process in the semiconductor process furnace disclosed in the embodiment of the present application;

[0012] Figure 3 is a schematic diagram of a partial structure including an annular flow equalizing component in the semiconductor process furnace disclosed in the embodiment of the present application;

[0013] Figure 4 is a schematic assembly diagram of the susceptor assembly and the wafer in the semiconductor process furnace disclosed in the embodiment of the present application;

[0014] Figure 5 is a schematic diagram of a partial structure in the susceptor assembly of the semiconductor process furnace disclosed in the embodiment of the present application;

[0015] Figure 6 is a schematic diagram of a partial structure in the susceptor assembly of the semiconductor process furnace disclosed in the embodiment of the present application;

[0016] Figure 7 is a schematic diagram of the susceptor assembly in another direction of the semiconductor process furnace disclosed in the embodiment of the present application.

[0017] Description of the Reference Numerals:

[0018] 100 - furnace tube, 110 - accommodation cavity, 120 - exhaust port,

[0019] 200 - Wafer boat assembly, 210 - Top plate, 220 - Bottom plate, 230 - Support post, 231 - Support groove, 232 - Through long groove, 240 - Support pillar, 250 - Reinforcement member,

[0020] 310 - Inlet pipe, 311 - Inlet port, 320 - Gas supply pipe, 321 - Gas supply port,

[0021] 400 - Annular flow - equalizing member, 410 - Flow - equalizing hole, 420 - Flow - equalizing groove,

[0022] 500 - Reinforcement piece,

[0023] 600 - Wafer. Detailed implementation manners

[0024] To make the objectives, technical solutions, and advantages of the present application clearer, the technical solutions of the present application will be clearly and completely described below in conjunction with specific embodiments of the present application and the corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without creative efforts shall fall within the protection scope of the present application.

[0025] The following will detail the technical solutions disclosed in each embodiment of the present application in conjunction with the drawings.

[0026] As Figures 1-7 shown, an embodiment of the present application discloses a semiconductor processing furnace, which includes a furnace tube 100 and a gas supply assembly. Of course, the semiconductor processing furnace may also include devices such as a wafer boat assembly 200, and the wafer boat assembly 200 can carry wafers 600.

[0027] Among them, the furnace tube 100 is the main structure of the semiconductor processing furnace, and the gas supply assembly is installed on the furnace tube 100. The furnace tube 100 can be formed of hard materials such as quartz to ensure that the furnace tube 100 has strong high - temperature resistance and corrosion resistance. The shape and size of the furnace tube 100 can be flexibly determined according to actual needs. Since the wafer 600 is usually a circular sheet - like structural member, based on this, the furnace tube 100 can be a cylindrical structural member to improve the space utilization rate of the furnace tube 100. Among them, the furnace tube 100 is provided with a receiving cavity 110 and an exhaust port 120, and the receiving cavity 110 and the exhaust port 120 are communicated. During the operation of the semiconductor processing furnace, the waste gas generated by the reaction between the wafer 600 and the process gas in the receiving cavity 110 can be discharged through the exhaust port 120 to the outside of the receiving cavity 110, ensuring the reliable progress of the process in the receiving cavity 110. The shape and size of the exhaust port 120 can be determined according to actual parameters such as the volume of the receiving cavity 110, and are not limited here.

[0028] The accommodation cavity 110 is a space for accommodating the above-mentioned susceptor assembly 200. During the operation of the semiconductor processing furnace, the susceptor assembly 200 can carry the wafers 600 so that the wafers 600 can be accommodated in the accommodation cavity 110 of the semiconductor processing furnace for processing. The susceptor assembly 200 can be provided with structures such as slots so that the wafers 600 can be accommodated at the slots and thus stably supported on the susceptor assembly 200. Of course, by providing the susceptor assembly 200 with a plurality of slots, the susceptor assembly 200 can carry a plurality of wafers 600, improving the processing efficiency of the wafers 600.

[0029] The gas supply assembly is a component in the semiconductor processing furnace for delivering process gas to the accommodation cavity 110. The gas supply assembly can be made of materials such as quartz to ensure that the gas supply assembly itself does not react with the process gas. The gas supply assembly is fixed on the furnace tube 100 to ensure that the gas supply assembly can be integrated with the furnace tube 100. Optionally, when both the gas supply assembly and the furnace tube 100 are made of quartz material, the gas supply assembly can be fixed on the furnace tube 100 by means of quartz welding or the like.

[0030] The gas supply assembly is provided with an air inlet 311 and a plurality of gas supply ports 321. Both the air inlet 311 and the accommodation cavity 110 are communicated with the plurality of gas supply ports 321. Thus, the process gas can be fed into the gas supply assembly from the air inlet 311, and under the action of the gas supply assembly, the process gas is fed into the accommodation cavity 110 from the plurality of gas supply ports 321.

[0031] At the same time, the plurality of gas supply ports 321 are arranged at intervals along the axial direction of the furnace tube 100, so that different gas supply ports 321 can respectively deliver the process gas into the accommodation cavity 110 from different axial positions of the furnace tube 100. Optionally, the gas supply assembly is a single pipe, and the air inlet 311 and the plurality of gas supply ports 321 can be arranged on this pipe together. One end of this pipe can be the air inlet 311. By providing a plurality of openings on the pipe and using the plurality of openings as the plurality of gas supply ports 321, the plurality of gas supply ports 321 are all communicated with the accommodation cavity 110 of the furnace tube 100. Of course, the number of the gas supply ports 321 and the distance between two adjacent gas supply ports 321 in the axial direction of the furnace tube 100 can be determined according to the actual situation and are not limited here.

[0032] As described above, the plurality of gas supply ports 321 can be arranged on the same pipe at the same time. Optionally, as Figure 1 and Figure 2As shown, in another embodiment of the present application, the air supply assembly includes an intake pipe 310 and a plurality of air supply pipes 320. One end of the intake pipe 310 is provided with an air inlet 311. One ends of the plurality of air supply pipes 320 are all connected to the other end of the intake pipe 310, and the other ends of the respective air supply pipes 320 are all provided with air supply ports 321. That is to say, the plurality of air supply ports 321 are respectively arranged on the plurality of air supply pipes 320, and by connecting the plurality of air supply pipes 320 to the intake pipe 310 individually, the air supply processes of the respective air supply pipes 320 are basically not interfered with each other, thereby preventing the flow rate of one of the plurality of air supply ports 321 that is far from the air inlet 311 from being much smaller than the flow rate of one that is close to the air inlet 311.

[0033] Specifically, parameters such as the cross-sectional areas and cross-sectional shapes of the plurality of air supply pipes 320 can all be determined according to actual situations and are not limited herein. One ends of the plurality of air supply pipes 320 can all be connected and communicated with one end of the intake pipe 310 by means such as quartz welding, and one end where the air supply port 321 is located among the plurality of air supply pipes 320 can be communicated with the accommodation cavity 110 of the furnace tube 100 by extending into the furnace tube 100. In addition, the number of the air supply pipes 320 can be determined according to actual parameters such as the size of the furnace tube 100 in its axial direction and is not limited herein.

[0034] As described above, by extending one end of the air supply pipe 320 into the accommodation cavity 110 of the furnace tube 100, the air supply port 321 and the accommodation cavity 110 can be made to communicate with each other. Optionally, as Figure 2 and Figure 3 shown, in another embodiment of the present application, the semiconductor process furnace may further include a plurality of annular flow equalizing members 400. Each of the annular flow equalizing members 400 is arranged inside the furnace tube 100, that is, in the accommodation cavity 110. Moreover, the plurality of annular flow equalizing members 400 are arranged at intervals along the axial direction of the furnace tube 100, so that each air supply port 321 can be provided with an annular flow equalizing member 400. The plurality of annular flow equalizing members 400 are in one-to-one correspondence and cooperation with the plurality of air supply ports 321. The annular flow equalizing members 400 can provide a flow equalizing effect for the air supply process to further improve the uniformity of the distribution of the process gas in the accommodation cavity 110.

[0035] A flow equalizing cavity is arranged inside the annular flow equalizing member 400, and a plurality of flow equalizing holes 410 are arranged on the flow equalizing cavity. Among them, when the air supply port 321 is provided with an annular flow equalizing member 400, the plurality of air supply ports 321 are in one-to-one correspondence and communication with the flow equalizing cavities of the plurality of annular flow equalizing members 400, so that the process gas can flow from the air supply port 321 into the flow equalizing cavity and flow into the accommodation cavity of the furnace tube 100 through the plurality of flow equalizing holes 410 of the flow equalizing cavity.

[0036] Moreover, the annular flow equalizing member 400 can be arranged around the susceptor assembly 200, thereby preventing the annular flow equalizing member 400 from interfering with the susceptor assembly 200 in carrying the wafers 600. By arranging a plurality of flow equalizing holes 410 of the annular flow equalizing member 400 at intervals in the circumferential direction of the annular flow equalizing member 400, after the process gas enters the flow equalizing cavity from the gas supply port 321, under the action of the plurality of flow equalizing holes 410, the process gas can be respectively transported to the periphery of the susceptor assembly 200. In this case, the uniformity of the process gas at different positions in the radial direction of the furnace tube 100 in the region where the annular flow equalizing member 400 is located can be further improved, and further the overall gas uniformity in the accommodation cavity 110 can be improved again.

[0037] Specifically, the size and number of the flow equalizing holes 410 can be determined according to the actual situation and are not limited herein. Moreover, during the process of arranging the flow equalizing holes 410 on the annular flow equalizing member 400, the distance between any two adjacent flow equalizing holes 410 among the plurality of flow equalizing holes 410 can be made equal.

[0038] An embodiment of the present application discloses a semiconductor process furnace, which includes a furnace tube 100 and a gas supply assembly. The gas supply assembly is installed on the furnace tube 100, and the gas supply assembly includes an inlet pipe 310, a plurality of gas supply pipes 320 and a plurality of annular flow equalizing members 400. The inlet pipe 310 is provided with an air inlet 311. One ends of the plurality of gas supply pipes 320 are all communicated with the other end of the inlet pipe 310. The other ends of the plurality of gas supply pipes 320 are all provided with gas supply ports 321, and the plurality of annular flow equalizing members 400 are all installed in the accommodation cavity 110 of the furnace tube 100. The plurality of annular flow equalizing members 400 are all provided with flow equalizing cavities, and the plurality of gas supply ports 321 are in one-to-one correspondence and communication with the flow equalizing cavities of the plurality of annular flow equalizing members 400.

[0039] Based on the above semiconductor process furnace, the process gas can be sent into the plurality of gas supply pipes 320 through the air inlet 311, and enter the flow equalizing cavities of the plurality of annular flow equalizing members 400 through the plurality of gas supply ports 321, and then flow from the plurality of flow equalizing holes of each flow equalizing cavity to different regions of the accommodation cavity 110 in the furnace tube 100 respectively. Since the plurality of gas supply ports 321 are arranged at intervals along the axial direction of the furnace tube 100, the process gas can be respectively sent to a plurality of different positions in the axial direction of the accommodation cavity 110 of the furnace tube 100, and under the action of the annular flow equalizing member 400, the process gas can flow from the same axial position to different radial directions along the radial direction of the furnace tube 100. In this case, the axial distribution uniformity and circumferential distribution uniformity of the process gas in the accommodation cavity 110 can be improved to ensure that the process effects of the wafers 600 in the accommodation cavity 110 are relatively good as much as possible.

[0040] In another embodiment of the present application, such as Figure 3As shown, in the direction pointing from the one with the largest distance from the air supply port 321 among the plurality of uniform flow holes 410 to the air supply port 321, the density of the uniform flow holes 410 can be gradually reduced. As described above, the annular uniform flow member 400 is an annular structural member, and the annular uniform flow member 400 is communicated with the air supply port 321. Furthermore, the relative position between the annular uniform flow member 400 and the air supply assembly is fixed. Compared with the other uniform flow holes 410, there must be one or two uniform flow holes 410 on the annular uniform flow member 400 with the largest distance from the air supply port 321 among the plurality of uniform flow holes 410. Then, the aforementioned one or two uniform flow holes 410 (one of them) is the one with the largest distance from the air supply port 321 among the uniform flow holes 410. In the direction pointing from this uniform flow hole 410 to the air supply port 321, the density of the uniform flow holes 410 is gradually reduced, that is, the density of the uniform flow holes 410 set in the unit area is getting smaller and smaller, or in other words, the distance between two adjacent uniform flow holes 410 is getting larger and larger.

[0041] In the case of adopting the above technical solution, since the process gas flows into the uniform flow cavity from the air supply port 321 and first reaches some of the uniform flow holes 410 near the air supply port 321 among the plurality of uniform flow holes 410, the flow rate of the process gas at these uniform flow holes 410 is relatively large. Correspondingly, the flow rate of the process gas at some of the uniform flow holes 410 with a relatively large distance from the air supply port 321 is relatively small. Furthermore, by changing the distribution density of the plurality of uniform flow holes 410 on the annular uniform flow member 400, the uniformity of the process gas at different positions in the space around the annular uniform flow member 400 can be further improved.

[0042] As described above, the annular uniform flow member 400 is provided with a uniform flow cavity. Optionally, the cross-section of the annular uniform flow member 400 intercepted by the plane along the axial direction of the furnace tube 100 can be a circular structure, that is, the uniform flow cavity can be an annular cavity with a circular cross-section. In another embodiment of the present application, as Figure 3 shown, optionally, the annular uniform flow member 400 is attached to the inner wall of the furnace tube 100. Specifically, the annular uniform flow member 400 can be fixedly installed on the inner wall of the furnace tube 100 through a connecting member, or the annular uniform flow member 400 can be welded and fixed on the inner wall of the furnace tube 100 to enclose the uniform flow cavity in this way, which can also reduce the processing difficulty of the semiconductor process furnace. More specifically, a uniform flow groove 420 is provided on the outer side of the annular uniform flow member along its axial direction, and the opening of the uniform flow groove 420 is attached to the inner wall of the furnace body to form the uniform flow cavity. That is, the uniform flow cavity is a structure jointly formed by the annular uniform flow member 400 and the furnace tube 100, which makes the radial dimension of the annular uniform flow member 400 relatively small, and can expand the connection area between the annular uniform flow member 400 and the furnace tube 100, and improve the connection reliability between the two.

[0043] As described above, the annular flow equalizing member 400 can be arranged to surround the susceptor assembly 200, and a plurality of flow equalizing holes 410 are provided on the annular flow equalizing member 400. Optionally, the flow equalizing holes 410 can be arranged on one side of the annular flow equalizing member 400 facing the inner wall of the furnace tube 100, or, along the axial direction of the furnace tube 100, the flow equalizing holes 410 can be arranged above or below the annular flow equalizing member 400. Based on the above embodiments, optionally, each of the flow equalizing holes 410 is arranged inside the annular flow equalizing member 400. In this case, each of the flow equalizing holes 410 can be arranged to face the susceptor assembly 200. Furthermore, during the operation of the semiconductor process furnace, the flow direction of the process gas flowing out of the flow equalizing holes 410 is the direction approaching the susceptor assembly 200, which can promote the inward flow of the process gas into the susceptor assembly 200, thereby improving the utilization rate of the process gas. Among them, in Figures 1 to 7 the curved arrow can represent the flow path of the process gas.

[0044] As described above, the plurality of gas supply pipes 320 can be installed on the furnace tube 100 by means of welding or connection by connectors, etc. Optionally, the gas supply pipes 320 can be installed inside the furnace tube 100. In another embodiment of the present application, each of the gas supply pipes 320 is arranged on the outer wall of the furnace tube 100. On the one hand, it prevents the gas supply pipes 320 from occupying the processing space of the wafer 600, and on the other hand, it can prevent the gas supply pipes 320 from contaminating the wafer 600, ensuring that the wafer 600 has a high yield. Moreover, each of the gas supply pipes 320 can be extended along the axial direction of the furnace tube 100, so that the gas supply pipes 320 have relatively small sizes while meeting the requirements, saving costs, and improving the conveying performance of the process gas.

[0045] Optionally, the semiconductor process furnace disclosed in the embodiments of the present application may further include a reinforcing member 500. A plurality of reinforcing members 500 are arranged on the outer wall of the furnace tube 100 to reinforce the plurality of gas supply pipes 320 installed on the outer wall of the furnace tube 100 by means of the plurality of reinforcing members 500, thereby further improving the installation stability of the gas supply assembly by means of the reinforcing members 500 and ensuring better connection reliability between the gas supply pipes 320 and the furnace tube 100. The reinforcing member 500 can be specifically formed based on the specific structure of the gas supply pipe 320 and made of materials such as quartz. The reinforcing member 500 can be fixed on the furnace tube 100 by means of quartz welding. Of course, when the length of the gas supply pipe 320 is relatively long, the number of the reinforcing members 500 can be multiple. The multiple reinforcing members 500 are arranged at intervals along the extending direction of the gas supply pipe 320, and the gas supply pipe 320 is connected to the multiple reinforcing members 500 together, ensuring relatively higher installation stability of the gas supply pipe 320.

[0046] As described above, the semiconductor processing furnace may include a susceptor assembly 200 for carrying wafers 600. The susceptor assembly 200 is accommodated in the accommodation chamber 110 of the furnace tube 100, and a plurality of annular flow equalizing members 400 may be disposed around the susceptor assembly 200. Moreover, the susceptor assembly 200 can provide the function of carrying the wafers 600 by setting slots or the like.

[0047] In this embodiment, the susceptor assembly 200 may include a top plate 210, a bottom plate 220, support columns 240, and at least three carrier columns 230. The top plate 210 and the bottom plate 220 are disposed opposite to each other, and the carrier columns 230 are all connected between the top plate 210 and the bottom plate 220, so that the susceptor assembly 200 forms an integral structural member. Specifically, the distance between the top plate 210 and the bottom plate 220, that is, the dimension of each carrier column 230 in the axial direction of the furnace tube 100, can be determined according to actual requirements and is not limited herein; the top plate 210, the bottom plate 220, and the carrier columns 230 can all be made of hard and high-temperature-resistant materials such as quartz, and it is ensured that none of the three will react with the wafers 600 and the process gas.

[0048] Moreover, at least three carrier columns 230 are spaced apart around the straight line where the axis of the susceptor assembly 200 is located. On the one hand, it ensures that the top plate 210 and the bottom plate 220 can form a reliable connection relationship through the carrier columns 230. On the other hand, it can also ensure that the three carrier columns 230 can provide a stable load-bearing capacity for the wafers 600. Of course, during the layout of at least three carrier columns 230, it is necessary to prevent the triangle formed by the perpendicular lines of the axes of any three carrier columns 230 from being an obtuse triangle. By dispersing the carrier columns 230 as much as possible in the circumferential direction of the furnace tube 100, the structural stability of the susceptor assembly 200 can be improved, and the reliability of the load-bearing capacity provided by the susceptor assembly 200 for the wafers 600 can be improved.

[0049] Wherein, each carrier column 230 is provided with a plurality of carrier slots 231. The plurality of carrier slots 231 are distributed along the axial direction of the furnace tube 100, and each carrier slot 231 faces away from the inner wall of the furnace tube 100. Thus, the plurality of carrier slots 231 of each carrier column 230 can form a plurality of load-bearing positions for carrying the wafers 600. One wafer 600 is simultaneously carried in one carrier slot 231 of each of the plurality of carrier columns 230 to ensure the load-bearing stability of the wafer 600. Of course, during the formation of the carrier slots 231, it is necessary to ensure that the positions of the plurality of carrier slots 231 on each carrier column 230 are the same in the axial direction of the furnace tube 100, so that the stability of the wafer 600 when it is simultaneously carried at the corresponding carrier slots 231 on the plurality of carrier columns 230 is relatively high.

[0050] As described above, during the process of placing the wafer 600, it is necessary to place the wafer 600 within the area surrounded by multiple susceptor assemblies 200. In this case, the portion of the wafer 600 facing the position where the susceptor assembly 200 is located will be blocked by the susceptor assembly 200, resulting in relatively difficult contact of the process gas with the aforementioned blocked area in the wafer 600. Based on this, as Figures 5 to 7 shown, in this embodiment, a through slot 232 is provided on the side of the bearing post 230 facing away from the bearing groove 231. Each bearing groove 231 communicates with the side of the susceptor assembly 200 facing the inner wall of the furnace tube 100 through the through slot 232. In this case, the bearing post 230 basically does not block the wafer 600, and the process gas in the space between the susceptor assembly 200 and the furnace tube 100 can flow to the multiple bearing grooves 231 through the through slot 232 and react with the wafer 600, ensuring that good reaction effects can be achieved between the process gas and various parts of the wafer 600.

[0051] Specifically, the through slot 232 can be formed on the bearing post 230 by drilling or other means. Alternatively, the through slot 232 and the bearing groove 231 can also be formed together during the processing of the bearing post 230, which can also improve the processing efficiency of the bearing post 230. The width of the through slot 232, or its dimension in the direction perpendicular to the axial direction of the furnace tube 100, can be determined according to the actual situation and is not limited here.

[0052] Furthermore, when the through slot 232 is provided on the bearing post 230, since the opposite sides of the bearing post 230 are interconnected, it will have a certain adverse effect on the bearing capacity of the bearing post 230. Based on this, as Figure 5 shown, optionally, the susceptor assembly 200 further includes a reinforcing member 250. At least one reinforcing member 250 is fixedly provided on the side of the bearing post 230 facing the inner wall of the furnace tube 100 to enhance the structural strength of the bearing post 230 by using the reinforcing member 250, thereby ensuring that the bearing post 230 has high structural strength. During the installation of the reinforcing member 250, the opposite ends of the reinforcing member 250 can be respectively connected to the parts of the bearing post 230 located on the opposite sides of the through slot 232, thereby making the connection reliability between the parts of the bearing post 230 located on the opposite sides of the through slot 232 higher. Specifically, the reinforcing member 250 can be a reinforcing rib, which can be made of quartz material. When the bearing post 230 is formed of quartz material, the reinforcing member 250 can be fixed on the susceptor assembly 200 by means of quartz welding; and, in order to further improve the overall structural strength of the susceptor assembly 200, multiple reinforcing members 250 can be provided on each bearing post 230, and the multiple reinforcing members 250 are evenly and spaced along the axial direction of the furnace tube 100.

[0053] As described above, the bearing column 230 is provided with a bearing groove 231, which will adversely affect the structural strength of the bearing column 230, and further affect the connection reliability between the top plate 210 and the bottom plate 220. Based on this, Figures 4 to 7 Optionally, the wafer boat assembly 200 disclosed in the embodiment of the present application further includes a support column 240 , which is fixedly connected between the top plate 210 and the bottom plate 220 , thereby utilizing the support column 240 to further improve the connection reliability between the top plate 210 and the bottom plate 220 .

[0054] When the wafer boat assembly 200 includes a support column 240, similar to the supporting column 230, a through long groove 232 may also be provided on the support column 240, which extends along the axial direction of the furnace tube 100, and the side of the support column 240 facing the inner wall of the furnace tube 100 is connected with the side of the support column 240 facing away from the inner wall of the furnace tube 100 through the through long groove 232, that is, the inner and outer sides of the support column 240 are connected through the through long groove 232, which further ensures that the support column 240 will not hinder the process gas from reacting with the corresponding position of the wafer 600, thereby preventing the support column 240 from blocking part of the area on the wafer 600 and adversely affecting the process effect of the wafer 600.

[0055] like Figure 6 As shown, at least one reinforcement member 250 may optionally be fixedly disposed on the side of the support column 240 facing the inner wall of the furnace tube 100, thereby enhancing the structural strength of the support column 240. During installation of the reinforcement member 250, the opposing ends of the reinforcement member 250 may be connected to the portions of the support column 240 located on opposing sides of the through-slot 232, thereby enhancing the connection reliability between the portions of the support column 240 located on opposing sides of the through-slot 232. Specifically, the reinforcement member 250 may be a reinforcing rib made of quartz. If the support column 240 is made of quartz, the reinforcement member 250 may be secured to the wafer boat assembly 200 by quartz welding or other methods. Furthermore, to further enhance the overall structural strength of the wafer boat assembly 200, multiple reinforcement members 250 may be disposed on each support column 240, with the multiple reinforcement members 250 evenly and spaced apart along the axial direction of the furnace tube 100.

[0056] The above embodiments of this application focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0057] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, various changes and modifications can be made to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included within the scope of the claims of the present application.

Claims

1. A semiconductor processing furnace, characterized in that, The invention comprises a furnace tube and an air supply assembly, wherein the air supply assembly comprises: An air intake pipe, multiple air supply pipes and multiple annular flow uniforming parts, the air intake pipe is provided with an air inlet at one end, each of the air supply pipes is arranged on the outer wall of the furnace pipe and extends along the axial direction of the furnace pipe, one end of the multiple air supply pipes is connected with the other end of the air intake pipe, and the other end of each air supply pipe is provided with an air supply port, the multiple air supply ports are arranged at intervals along the axial direction of the furnace pipe, and the distances between the multiple air supply ports and the air intake ports are different; each of the annular flow uniforming parts is arranged inside the furnace pipe and at intervals along the axial direction of the furnace pipe, a flow uniforming cavity is provided in the annular flow uniforming part, and multiple flow uniforming holes are distributed at intervals thereon, and the multiple air supply ports are connected one-to-one with the flow uniforming cavities of the multiple annular flow uniforming parts.

2. The semiconductor processing furnace according to claim 1, wherein In a direction from one of the plurality of flow balancing holes that has the largest distance from the air supply port toward the air supply port, the density of the flow balancing holes gradually decreases.

3. The semiconductor process furnace according to claim 1, characterized in that, The outer side of the annular flow equalizer is provided with a flow equalizer groove along its circumference, the opening of the flow equalizer groove is attached to the inner wall of the furnace tube to form the flow equalizer cavity, and each of the flow equalizer holes is provided on the inner side of the annular flow equalizer.

4. The semiconductor processing furnace according to claim 1, characterized in that, A plurality of reinforcing members are also provided on the outer wall of the furnace tube for reinforcing each of the air supply pipes respectively.

5. The semiconductor processing furnace according to claim 1, characterized in that, It also includes a wafer boat assembly for carrying wafers, which can be accommodated in the furnace tube. Multiple annular flow-distributing members are arranged around the wafer boat assembly. The wafer boat assembly includes a top plate, a bottom plate and at least three supporting columns. The top plate and the bottom plate are arranged opposite to each other, and the supporting columns are connected between the top plate and the bottom plate. At least three supporting columns are distributed at intervals along the circumference of the furnace tube, and each supporting column is provided with a plurality of supporting grooves distributed along the axial direction of the furnace tube, and each supporting groove is arranged toward the axis of the furnace tube.

6. The semiconductor process furnace according to claim 5, characterized in that, A through long slot is provided on a side of the bearing column away from the bearing slot, and each of the bearing slots is communicated with a side of the wafer boat assembly facing the inner wall of the furnace tube through the through long slot.

7. The semiconductor process furnace according to claim 6, wherein, The wafer boat assembly further includes a reinforcement member. At least one reinforcement member is fixed to the side of the supporting column away from the supporting slot. The opposite ends of the reinforcement member are respectively connected to the opposite sides of the supporting column on the long slot.

8. The semiconductor process furnace according to claim 5, characterized in that, The crystal boat assembly also includes a support column, which is connected between the top plate and the bottom plate, and the support column is provided with a through long slot, which extends along the axial direction of the furnace tube. The side of the support column facing the inner wall of the furnace tube is connected to the side of the support column away from the inner wall of the furnace tube through the through long slot.

9. The semiconductor processing furnace according to claim 8, wherein The wafer boat assembly further includes a reinforcement member. At least one reinforcement member is fixed to the side of the support column facing the inner wall of the furnace tube. The opposite ends of the reinforcement member are respectively connected to the portions of the support column located on the opposite sides of the through-long slot.

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