Semiconductor heat treatment equipment

Abstract

The present invention discloses semiconductor heat treatment equipment, relating to the field of semiconductor manufacturing technology. The semiconductor heat treatment equipment comprises a furnace body, a gas supply manifold, an air inlet pipe, and a mixing chamber, the mixing chamber surrounding the furnace body. The gas supply manifold is connected to the mixing chamber and is used to inject process gas into the mixing chamber. The air inlet pipe connects the furnace body and the mixing chamber, and the process gas in the mixing chamber can enter the furnace body through the air inlet pipe from the mixing chamber. This solution can solve the problem of poor uniformity of thin films on wafer surfaces.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to semiconductor heat treatment equipment. Background Art

[0002] With the rapid development of the semiconductor manufacturing industry, device feature sizes continue to shrink, chip integration is increasing, and the requirements for process specifications are becoming increasingly stringent. In semiconductor manufacturing, diffusion furnaces are used for processes such as thin film deposition, alloying, and annealing. During this process, the uniformity of temperature and process gas mixing can affect the uniformity of film thickness during semiconductor fabrication.

[0003] In the related art, process gases cannot be fully mixed before entering the diffusion furnace reaction chamber, resulting in poor process gas mixing uniformity. In addition, the local temperature of the diffusion furnace reaction chamber is relatively low, which in turn leads to poor uniformity of the semiconductor surface film. Summary of the Invention

[0004] The invention discloses a semiconductor heat treatment device to solve the problem of poor uniformity of the surface film of the semiconductor manufactured by the semiconductor heat treatment device in the related art.

[0005] In order to solve the above problems, the present invention adopts the following technical solutions:

[0006] The semiconductor heat treatment equipment described in the present application includes a furnace body, a gas supply manifold, an air inlet pipe and a mixing chamber, wherein the mixing chamber is arranged around the furnace body;

[0007] The gas supply manifold is in communication with the mixing chamber, and the gas supply manifold is used to inject process gas into the mixing chamber;

[0008] The air inlet pipe is used to connect the furnace body and the mixing chamber, and the process gas in the mixing chamber can enter the furnace body from the mixing chamber through the air inlet pipe.

[0009] The technical solution adopted by the present invention can achieve the following beneficial effects:

[0010] In the semiconductor heat treatment equipment disclosed in the embodiment of the present invention, the process gas needs to pass through the mixing chamber before entering the furnace body, so that the process gas can be mixed in the mixing chamber before entering the furnace body. Therefore, the semiconductor heat treatment equipment described in this application can improve the uniformity of the process gas mixing. In addition, the mixing chamber is arranged around the furnace body, so that heat exchange can occur between the furnace body and the mixing chamber on all sides, thereby reducing the temperature difference between the process gas in the furnace body and the process gas in the mixing chamber, which is beneficial to improving the uniformity of the temperature at various locations in the furnace body. Therefore, the semiconductor heat treatment equipment described in the embodiment of the present invention can improve the uniformity of the thin film on the surface of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0012] Figure 1 A schematic diagram of a semiconductor heat treatment device disclosed in an embodiment of the present application at a first viewing angle;

[0013] Figure 2 A schematic cross-sectional view of a semiconductor heat treatment device disclosed in one embodiment of the present application;

[0014] Figure 3 A schematic diagram of a semiconductor thermal processing apparatus disclosed in an embodiment of the present application at a second viewing angle;

[0015] Figure 4 Schematic diagram of semiconductor heat treatment equipment in related technology.

[0016] In the figure: 101-heating part; 102-reaction chamber; 103-insulation cylinder; 104-exhaust pipe; 105-gas supply pipe; 100-furnace body; 110-first furnace body section; 111-process chamber; 120-second furnace body section; 121-insulation chamber; 200-gas supply manifold; 210-first branch manifold; 220-second branch manifold; 300-inlet pipe; 400-mixing chamber; 410-first air inlet; 420-first exhaust port; 500-first shell; 600-exhaust pipe; 700-inlet device; 800-mounting seat; 900-sealing assembly; 1000-crystal boat. DETAILED DESCRIPTION

[0017] To make the objectives, technical solutions, and advantages of the present invention more clear, the technical solutions of the present invention will be clearly and completely described below in conjunction with specific embodiments of the present invention and corresponding drawings. Obviously, the embodiments described are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0018] The following is combined with Figures 1 to 4 , describes in detail the technical solutions disclosed in each embodiment of the present invention.

[0019] Reference Figure 1 and Figure 2 The semiconductor heat treatment equipment described in this application includes a furnace body (furnace tube) 100, a gas supply manifold 200, an air inlet pipe 300, and a mixing chamber 400. The furnace body 100 is a basic structural component that can provide an installation foundation for the gas supply manifold 200, the air inlet pipe 300, and the mixing chamber 400.

[0020] Reference Figure 1 and Figure 2 The mixing chamber 400 is arranged around the furnace body 100 so that heat exchange can be carried out between the mixing chamber 400 and the furnace body 100, thereby making the difference between the temperature of the gas in the mixing chamber 400 and the temperature in the furnace body 100 smaller, reducing the difference between the temperature of the furnace body 100 close to the air inlet side and the temperature of the furnace body 100 away from the air inlet side, and improving the temperature uniformity in the furnace body 100.

[0021] It should be noted that, the better the temperature uniformity in the furnace body 100 is, the smaller the temperature difference between different locations in the furnace body 100 is, which can further improve the uniformity of the thin film on the surface of the semiconductor.

[0022] Reference Figure 2 The gas supply manifold 200 is in communication with the mixing chamber 400 and is used to inject process gas into the mixing chamber 400. The gas inlet pipe 300 connects the furnace body 100 and the mixing chamber 400, and the process gas in the mixing chamber 400 can enter the furnace body 100 through the mixing chamber 400. In this embodiment, the mixing chamber 400 provides sufficient flow and mixing space for the process gases, allowing the process gases to mix more evenly before entering the furnace body 100, thereby improving the uniformity of the semiconductor surface film.

[0023] Reference Figure 1 The gas supply manifold 200 may include multiple branch manifolds. Furthermore, each branch manifold can be used to provide different process gases to the mixing chamber 400. Exemplarily, the gas supply manifold 200 includes a first branch manifold 210 and a second branch manifold 220. Both the first branch manifold 210 and the second branch manifold 220 are connected to the mixing chamber 400, thereby enabling simultaneous supply of different process gases to the mixing chamber 400. Furthermore, the gas supply manifold 200 includes a transition manifold connected to the mixing chamber 400. Multiple branch manifolds are connected to the transition manifold, allowing each branch manifold to communicate with the mixing chamber 400 through the transition manifold. Furthermore, the transition manifold is detachably connected to the mixing chamber 400 to facilitate maintenance of the gas supply manifold 200 in semiconductor thermal processing equipment. Furthermore, the transition manifold and the mixing chamber 400 can be sealed together by a sealing assembly 900. Exemplarily, the sealing assembly 900 may include a first flange, a second flange, and a sealing ring. Furthermore, a first flange is provided at the first air inlet 410, and a second flange is provided at the transition manifold. A sealing ring is provided between the first flange and the second flange. Furthermore, the first flange and the second flange can be fastened by bolts.

[0024] Reference Figure 4In the related art, the vertical diffusion furnace adopts a single-sided air intake, so that the temperature of the side of the vertical diffusion furnace close to the air intake is lower than the temperature of the side of the vertical diffusion furnace away from the air intake, thereby reducing the uniformity of the semiconductor surface film. Specifically, the vertical diffusion furnace in the related art includes a heating part 101, a reaction chamber (furnace body) 102, an insulation tube 103, an exhaust pipe 104 and a gas supply pipe 105. Specifically, the heating part 101 is sleeved in the reaction chamber 102, and an installation cavity for installing the gas supply pipe 105 is formed between the heating part 101 and the reaction chamber 102. The gas supply pipe 105 is arranged along the side wall of the reaction chamber 102, and the gas supply pipe 105 is connected to the reaction chamber 102 so that the gas supply pipe 105 can provide process gas to the reaction chamber 102. The exhaust pipe 104 is connected to the reaction chamber 102 so that the gas in the reaction chamber 102 can be discharged through the exhaust pipe 104. Reference Figure 4 In the related art, the diameter of the gas supply pipe 105 is small, which is not conducive to the mixing of process gases, resulting in insufficient mixing of process gases, causing uneven distribution of each process gas after entering the reaction chamber 102, resulting in reduced uniformity of the semiconductor surface film.

[0025] Optionally, the semiconductor heat treatment equipment described in this application can be used for the preparation of wafer surface thin films. During the process of preparing the wafer surface thin film process, process gas is injected into the mixing chamber 400 through the air inlet pipe 300 so that the process gas is mixed in the mixing chamber 400. The mixing chamber 400 is arranged around the furnace body 100 so that the furnace body 100 can transfer heat with the mixing chamber 400, thereby reducing the difference between the temperature of the process gas in the mixing chamber 400 and the temperature in the furnace body 100. The mixing chamber 400 surrounds the furnace body 100 so that the side walls of the furnace body 100 can transfer heat with the mixing chamber 400. On the one hand, the contact surface between the furnace body 100 and the mixing chamber 400 can be increased, and the efficiency of the heat exchange between the furnace body 100 and the mixing chamber 400 can be improved. On the other hand, the temperature on each side of the furnace body 100 can be balanced, and the uniformity of the circumferential temperature of the furnace body 100 can be improved. The process gas mixed in the mixing chamber 400 enters the furnace body 100 along the air inlet pipe 300 for the preparation of wafer surface thin films. Illustratively, the semiconductor heat treatment equipment described in the present application may be a vertical diffusion furnace.

[0026] It should be noted that the more uniform the temperature distribution within the process chamber 111, the more uniform the temperature distribution on the surface of the wafer within the process chamber 111, which in turn can improve the uniformity of the thin film on the wafer surface. Of course, more complete mixing of the process gases in the mixing chamber 400 can also improve the uniformity of the process gases, which in turn can further improve the uniformity of the thin film on the wafer surface.

[0027] Reference Figure 1 and Figure 2The furnace body 100 includes a first furnace body section 110 and a second furnace body section 120. The first furnace body section 110 has a process chamber 111. The process chamber 111 is used to accommodate the wafer boat 1000 of the semiconductor heat treatment equipment. During the semiconductor heat treatment process, wafers are placed on the wafer boat 1000 in the process chamber 111. The process chamber 111 is connected to the gas inlet pipe 300, and the process gas enters the process chamber 111 from the mixing chamber 400 through the gas inlet pipe 300. The second furnace body section 120 has a heat preservation chamber 121, which is connected to the process chamber 111 and is used to accommodate the heat preservation barrel of the semiconductor heat treatment equipment. The wafer boat 1000 is connected to the heat preservation barrel. For example, the furnace body 100 can be configured as a cylindrical shape to ensure more uniform circumferential heat dissipation of the furnace body 100, thereby improving the consistency of the circumferential temperature distribution of the furnace body 100. Furthermore, the first furnace body section 110 and the second furnace body section 120 can be a single-piece structure.

[0028] In the above embodiment, an insulation chamber 121 is provided in the second furnace body section 120. By providing an insulation tube in the insulation chamber 121, excessive heat dissipation from the open end of the furnace body 100 can be avoided, thereby improving the temperature uniformity of the furnace body 100, especially in the process chamber 111.

[0029] Reference Figures 1 to 3 In an optional embodiment, the semiconductor heat treatment equipment further includes an air intake device 700. Furthermore, the air intake device 700 is arranged in the first furnace body section 110, and the air intake device 700 is connected to the process chamber 111. Exemplarily, the end of the air intake pipe 300 away from the mixing chamber 400 is connected to the air intake device 700 to intake air into the process chamber 111 through the air intake device 700. Exemplarily, the air intake device 700 is arranged at the end of the first furnace body section 110 away from the second furnace body section 120. Optionally, the air intake device 700 includes a plurality of air outlets, and the air outlets are evenly distributed. In this embodiment, the air intake device 700 is provided with a plurality of air outlets so that the process gas can enter the process chamber 111 more evenly. Exemplarily, the air intake device 700 can be an air intake shower.

[0030] In an optional embodiment, the semiconductor heat treatment equipment further includes a heating device for heating the first furnace body section 110 and the second furnace body section 120. For example, the heating device can be embedded in the first furnace body section 110 and / or the second furnace body section 120. Alternatively, the heating device can be housed outside the first furnace body section 110 and / or the second furnace body section 120. There are many types of heating devices. For example, the heating device can be resistance heating or heat exchange liquid heating. For this reason, this embodiment does not limit the specific type of heating device.

[0031] In an optional embodiment, a heating device is arranged around the process chamber 111 and / or the insulation chamber 121 so that the heating device can heat the first furnace body section 110 and the second furnace body section 120 synchronously from all sides to ensure that the temperature distribution of the first furnace body section 110 and the second furnace body section 120 in the circumferential direction is more uniform.

[0032] Reference Figure 1 and Figure 2 The mixing chamber 400 is disposed around the second furnace section 120, so that the heating device located in the second furnace section 120 can also heat the mixing chamber 400 surrounding the second furnace section 120, thereby reducing the temperature difference between the mixing chamber 400 and the temperatures in the process chamber 111 and the insulation chamber 121. This can prevent heat exchange between the side of the first furnace section 110 close to the air inlet pipe 300 and the air inlet pipe 300, ensuring that the temperature on the side of the first furnace section 110 close to the air inlet pipe 300 is balanced with the temperature on the side of the first furnace section 110 away from the air inlet pipe 300. In addition, the mixing chamber 400 is disposed around the second furnace section 120, which can prevent unheated process gas from affecting the temperature in the process chamber 111 and eliminate the interference of gas that does not enter the process chamber 111 on the temperature distribution in the process chamber 111.

[0033] Reference Figure 2 The semiconductor heat treatment equipment further includes a first shell 500. The first shell 500 and the furnace body 100 are both cylindrical. The first shell 500 is sleeved on the second furnace body section 120. Both ends of the first shell 500 are sealed with the second furnace body section 120, and a mixing chamber 400 is formed between the first shell 500 and the furnace body 100. For example, the first shell 500 can be welded and sealed to the second furnace body section 120. Furthermore, the first shell 500 and the second furnace body section 120 are coaxially arranged, that is, the gap formed between the first shell 500 and the second furnace body section 120 is more uniform in the circumferential direction, thereby ensuring a more uniform temperature distribution in the mixing chamber 400 and the second furnace body section 120 in the circumferential direction.

[0034] In the above embodiment, the first housing 500 and the furnace body 100 enclose the mixing chamber 400, which not only facilitates heat exchange between the second furnace section 120 and the process gas in the mixing chamber 400, but also improves the compactness of the device structure. Furthermore, optionally, the heating device located in the first furnace section 110 and the heating device located in the second furnace section 120 are independent of each other, thereby enabling the heating devices located in the first furnace section 110 and the second furnace section 120 to be controlled separately to adjust the temperature in the process chamber 111 and the temperature in the holding chamber 121.

[0035] Reference Figure 1 and Figure 2In an optional embodiment, the semiconductor heat treatment apparatus further includes an exhaust pipe 600, which is in communication with the heat preservation chamber 121 and is disposed at an end of the second furnace section 120 away from the first furnace section 110. For example, the exhaust pipe 600 may be disposed radially along the second furnace section 120, with a gap provided between the exhaust pipe 600 and an end of the first housing 500 away from the first furnace section 110.

[0036] In the above embodiment, the exhaust pipe 600 is disposed at the end of the second furnace body section 120 away from the first furnace body section 110, which is beneficial to reducing the impact of the exhaust pipe 600 on the temperature in the process chamber 111. It should be noted that during the process of exhausting the gas in the insulation chamber 121, the temperature of the insulation chamber 121 close to the exhaust side is lower than the temperature of the insulation chamber 121 away from the exhaust side. That is, the temperature in the insulation chamber 121 gradually decreases from the end away from the exhaust side to the end close to the exhaust side. The exhaust pipe 600 is disposed at the end of the second furnace body section 120 away from the first furnace body section 110, which can make the temperature of the insulation chamber 121 close to the first furnace body section 110 closer to the temperature in the process chamber 111, thereby ensuring a more uniform temperature distribution in the process chamber 111.

[0037] In an optional embodiment, a wafer boat 1000 is disposed within the process chamber 111. Exemplarily, the wafer boat 1000 is used to hold wafers to be processed. Furthermore, the wafer boat 1000 is provided with multiple wafer placement positions along the axis of the furnace body 100, enabling the semiconductor heat treatment apparatus to process multiple wafers simultaneously, thereby improving the processing efficiency of the semiconductor heat treatment apparatus.

[0038] Reference Figures 1 to 3 The mixing chamber 400 has a first air inlet 410, which is connected to the gas supply manifold 200, and the direction of the first air inlet 410 is arranged along the radial direction of the furnace body 100, so that the process gas entering from the first air inlet 410 can flow along the mixing chamber 400 to both sides of the first air inlet 410. Furthermore, the mixing chamber 400 is arranged around the second furnace body section 120, so that the process gas can rotate in the mixing chamber 400. It should be noted that the direction of the first air inlet 410 refers to the flow direction of the gas when the gas enters the mixing chamber 400 from the first air inlet 410. Figure 3 The direction of the first air inlet 410 is arranged along the radial direction of the furnace body 100, so that the mixing chamber 400 can form two airflows with different rotation directions, and the two airflows with different rotation directions can convect in the mixing chamber 400, thereby allowing the process gas to be mixed more evenly in the mixing chamber 400.

[0039] In an optional embodiment, a baffle may be provided in the mixing chamber 400 to change the trajectory of the airflow in the mixing chamber 400, thereby making the airflow in the mixing chamber 400 more turbulent and allowing the process gases to be mixed more evenly in the mixing chamber 400. Furthermore, the baffle may be provided in an arc shape so that when the airflow impacts the arc-shaped baffle, vortices may be formed, further facilitating the thorough mixing of the mixed gas.

[0040] In an optional embodiment, the mixing chamber 400 further includes a first exhaust port 420 , which is connected to the first furnace body section 110 via the air inlet pipe 300 , and the first exhaust port 420 and the first air inlet 410 are respectively located on opposite sides of the furnace body 100 . Figure 3 Figure 4 is a schematic diagram illustrating the flow of process gas within the mixing chamber 400. The mixed gas enters the mixing chamber 400 from the first air inlet 410 and forms two streams within the mixing chamber 400, each flowing toward either side of the first air inlet 410. The first exhaust port 420 and the first air inlet 410 are located on opposite sides of the furnace body 100. This means that the two air streams travel the same distance from the first air inlet 410 to the first exhaust port 420. This ensures that the process gas is evenly mixed before being discharged from the first exhaust port 420 and entering the process chamber 111. Furthermore, the location of the first exhaust port 420 and the first air inlet 410 on opposite sides of the furnace body 100 improves the uniformity of the circumferential distribution of the process gas within the mixing chamber 400.

[0041] In an optional embodiment, the first air inlet 410 is disposed at an end of the mixing chamber 400 away from the first furnace section 110. The first exhaust port 420 is disposed at an end of the mixing chamber 400 close to the first furnace section 110. In this embodiment, the residence time of the process gas in the mixing chamber 400 can be extended to ensure that the process gas can be heated by the heating device disposed in the second furnace section 120, while also achieving better mixing.

[0042] Reference Figure 1 and Figure 2 The air inlet pipe 300 is located outside the furnace body 100, with a gap between the air inlet pipe 300 and the outer wall of the furnace body 100. In this embodiment, contact and heat exchange between the air inlet pipe 300 and the furnace body 100 are avoided, thereby reducing the impact of the layout of the air inlet pipe 300 on the temperature distribution in the process chamber 111, thereby improving the uniformity of the semiconductor surface film.

[0043] In a further optional embodiment, the furnace body 100 is made of quartz.

[0044] In an optional embodiment, the semiconductor heat treatment apparatus further includes a mounting base 800. Exemplarily, the mounting base 800 is disposed at the bottom of the furnace body 100 to support and secure the furnace body 100. Furthermore, the mounting base 800 can be integrally formed with the furnace body 100. Exemplarily, the mounting base 800 can be integrally formed with the furnace body 100, or can be welded together to form an integral structure.

[0045] The above embodiments of the present invention focus on the differences between the various embodiments. As long as the different optimization features between the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, they will not be repeated here.

[0046] The foregoing is merely an embodiment of the present invention and is not intended to limit the present invention. It will be apparent to those skilled in the art that various modifications and variations of the present invention are possible. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention are intended to be included within the scope of the claims of the present invention.

Claims

1. A semiconductor heat treatment device, characterized in that: The invention comprises a furnace body (100), an air supply manifold (200), an air inlet pipe (300) and a mixing chamber (400), wherein the mixing chamber (400) is arranged around the furnace body (100); The gas supply manifold (200) is in communication with the mixing chamber (400), and the gas supply manifold (200) is used to inject process gas into the mixing chamber (400); The air inlet pipe (300) is used to connect the furnace body (100) and the mixing chamber (400), and the process gas in the mixing chamber (400) can enter the furnace body (100) from the mixing chamber (400) through the air inlet pipe (300).

2. The semiconductor heat treatment equipment according to claim 1, characterized in that The furnace body (100) comprises a first furnace body section (110) and a second furnace body section (120); the first furnace body section (110) has a process chamber (111); the process chamber (111) is used to accommodate a wafer boat (1000) of the semiconductor heat treatment equipment; the process chamber (111) is communicated with the air inlet pipe (300); the process gas enters the process chamber (111) from the mixing chamber (400) through the air inlet pipe (300); The second furnace body section (120) has a heat preservation chamber (121), the heat preservation chamber (121) is communicated with the process chamber (111), the heat preservation chamber (121) is used to accommodate a heat preservation barrel of the semiconductor heat treatment equipment, and the wafer boat (1000) is connected to the heat preservation barrel.

3. The semiconductor heat treatment equipment according to claim 2, characterized in that The semiconductor heat treatment equipment further comprises a heating device, wherein the heating device is used to heat the first furnace body section (110) and the second furnace body section (120).

4. The semiconductor heat treatment equipment according to claim 3, characterized in that The mixing chamber (400) is arranged around the second furnace section (120).

5. The semiconductor heat treatment equipment according to claim 4, characterized in that The semiconductor heat treatment equipment further includes a first shell (500), wherein the first shell (500) and the furnace body (100) are both cylindrical, and the first shell (500) is sleeved on the second furnace body section (120), and both ends of the first shell (500) are sealedly connected to the second furnace body section (120), and the mixing chamber (400) is formed between the first shell (500) and the furnace body (100).

6. The semiconductor heat treatment equipment according to claim 5, characterized in that The semiconductor heat treatment equipment further comprises an exhaust pipe (600), the exhaust pipe (600) being in communication with the heat preservation chamber (121), and the exhaust pipe (600) being arranged at an end of the second furnace body section (120) away from the first furnace body section (110).

7. The semiconductor heat treatment equipment according to any one of claims 2 to 6, characterized in that: The mixing chamber (400) has a first air inlet (410), the first air inlet (410) is connected to the air supply manifold (200), and the direction of the first air inlet (410) is arranged along the radial direction of the furnace body (100).

8. The semiconductor heat treatment equipment according to claim 7, characterized in that The mixing chamber (400) further comprises a first exhaust port (420), the first exhaust port (420) being connected to the first furnace body section (110) via the air inlet pipe (300), and the first exhaust port (420) and the first air inlet (410) being respectively located on opposite sides of the furnace body (100).

9. The semiconductor heat treatment equipment according to claim 8, characterized in that The first air inlet (410) is provided at an end of the mixing chamber (400) away from the first furnace section (110); The first exhaust port (420) is provided at one end of the mixing chamber (400) close to the first furnace section (110).

10. The semiconductor heat treatment equipment according to claim 7, characterized in that The air inlet pipe (300) is located outside the furnace body (100), and a gap is provided between the air inlet pipe (300) and an outer wall of the furnace body (100).

Images