Light-emitting diode turntable

Abstract

The present invention relates to a light-emitting diode turntable for heating a wafer, and particularly to a light-emitting diode turntable that can effectively heat the non-peripheral area and the peripheral area of the wafer, i.e., the entire area of the wafer, even when the area of the heating portion of the light-emitting diode turntable is smaller than the area of the wafer.

Description

Technical Field

[0001] The present invention relates to a light-emitting diode turntable for heating a wafer by means of light-emitting diodes. Background Art

[0002] Semiconductor wafers are high-precision products and are subjected to various surface treatment processes such as etching, cleaning, polishing, and material deposition. The surface treatment process of such wafers is achieved by heating the wafer by means of light-emitting diodes (LEDs) of a light-emitting diode turntable while the light-emitting diode turntable holds the wafer and rotates the wafer and a cleaning liquid is sprayed onto the upper part of the light-emitting diode turntable through a cleaning nozzle.

[0003] In recent years, the diameter of wafers has tended to gradually increase. Therefore, due to the surface tension of the cleaning liquid when drying the wafers, the phenomenon of wafer pattern collapse (collapse or leaning) has gradually increased.

[0004] One of the reasons for the wafer pattern collapse phenomenon is that the cleaning liquid remains on the wafer surface. To solve this problem, a drying technique is required that can rapidly heat the cleaning liquid while uniformly drying the entire wafer so that the cleaning liquid does not remain on the wafer surface.

[0005] As described above, as a light-emitting diode turntable for heating a wafer to prevent the wafer pattern collapse phenomenon, those described in Korean Registered Patent No. 10-1981983 (hereinafter referred to as "Patent Document 1") and U.S. Registered Patent No. 10,312,117 (hereinafter referred to as "Patent Document 2") are known.

[0006] In Patent Document 1, in the wafer cleaning process, the LED heater heats the wafer through a plurality of LEDs. However, since the area of the LED heater of Patent Document 1 is formed to be smaller than the area of the wafer, there is a problem that the peripheral portion of the wafer cannot be properly heated.

[0007] In the case of Patent Document 2, there is only a description of solving the following problems: A Fresnel lens is disposed on the light-emitting diode to solve the problem that the wafer is not heated in the pillar region at the center of the turntable, or an assembly surface inclined in the direction of the pillar region at the center of the turntable is disposed on the circuit board and the light-emitting diode is assembled on the assembly surface, and the wafer is not heated in the pillar region. However, the problem that the peripheral region of the wafer cannot be properly heated cannot be solved.

[0008] Therefore, as described above, when the area of the wafer is larger than the area of the heating region of the LED turntable, a technology capable of effectively heating the peripheral region of the wafer needs to be developed.

[0009] [Prior Art Documents]

[0010] [Patent Documents]

[0011] (Patent Document 1) Korean Registered Patent No. 10-1981983

[0012] (Patent Document 2) US Registered Patent No. 10,312,117 Summary of the Invention

[0013] Problems to be Solved by the Invention

[0014] The present invention is proposed to solve the problems as described above, and its object is to provide an LED turntable that can effectively heat the non-peripheral region and the peripheral region of the wafer, that is, the entire area of the wafer, even when the area of the heating part of the LED turntable is smaller than the area of the wafer.

[0015] Means for Solving the Problems

[0016] An LED turntable according to one feature of the present invention holds a wafer and is configured to be rotatable and heats the wafer, and is characterized by including: a heating part, in which a plurality of first light-emitting diodes and a plurality of second light-emitting diodes are arranged, the plurality of first light-emitting diodes vertically irradiate the lower surface of the wafer, and the plurality of second light-emitting diodes obliquely irradiate the lower surface of the periphery of the wafer in the peripheral direction.

[0017] In addition, it is characterized in that in the heating part, the region where the plurality of first light-emitting diodes are arranged and the region where the plurality of second light-emitting diodes are arranged are independently arranged separately from each other.

[0018] An LED turntable according to another feature of the present invention is characterized by including: a main body that holds a wafer and is configured to be rotatable; and a heating part that is arranged between the wafer and the main body to heat the wafer, the heating part including: a plate, in at least a part of its periphery, an inclined part formed to be inclined downward more toward its periphery; a first light-emitting diode group arranged on at least a part of the upper surface of the plate except the inclined surface of the inclined part; and a second light-emitting diode group arranged on the inclined surface of the inclined part.

[0019] In addition, the main body includes: a first hollow portion formed in the center of the main body for inserting a support column; a peripheral portion disposed on the periphery of the main body, where a plurality of chuck pins for holding the wafer are arranged; and a groove portion located between the first hollow portion and the peripheral portion, and the heating portion is positioned above the groove portion.

[0020] In addition, the plurality of chuck pins are located on the periphery of the main body relative to the heating portion.

[0021] In addition, the first light-emitting diode group is assembled on a first light-emitting diode substrate, the first light-emitting diode substrate is disposed on at least a part of the upper surface of the plate except for the inclined surface of the inclined portion, the second light-emitting diode group is assembled on a second light-emitting diode substrate, and the second light-emitting diode substrate is disposed on the inclined surface of the inclined portion of the upper surface of the plate.

[0022] In addition, the plate includes: a second hollow portion formed in the center of the plate for inserting a support column; an inflow portion and an outflow portion located at the second hollow portion; and a flow path connecting the inflow portion and the outflow portion and formed inside the plate.

[0023] Effects of the Invention

[0024] The light-emitting diode turntable according to the present invention as described above has the following effects.

[0025] Even when the area of the heating portion is smaller than the area of the wafer, heating of the peripheral region of the wafer can be achieved, thereby effectively preventing pattern collapse of the wafer due to cleaning liquid remaining on the surface of the peripheral region of the wafer during the wafer cleaning process.

[0026] Since the fluid flows through the flow path in the entire area of the plate, cooling of the plurality of first light-emitting diodes and the plurality of second light-emitting diodes disposed on the plate can be more effectively achieved. Therefore, temperature control of the wafer by the plurality of first light-emitting diodes and the plurality of second light-emitting diodes can be more easily achieved, and the life of the light-emitting diode turntable is also extended.

[0027] Since the plate is manufactured by three-dimensional (3D) printing, a complex flow path structure can be formed as described above even on a plate with a small thickness. Therefore, even when the height of the groove portion of the light-emitting diode turntable is low, the heating portion can be easily provided, and further, compactification of the light-emitting diode turntable can be achieved. Description of the Drawings

[0028] Figure 1 It is a perspective view of a light-emitting diode turntable according to a preferred embodiment of the present invention.

[0029] Figure 2Exploded perspective view of a light-emitting diode turntable according to a preferred embodiment of the present invention.

[0030] Figure 3 Is Figure 2 Perspective view of the main body of.

[0031] Figure 4 Is Figure 2 Perspective view of the heating part of.

[0032] Figure 5 Is Figure 2 Exploded perspective view of the heating part of.

[0033] Figure 6 Is Figure 5 Perspective view of the plate of.

[0034] Figure 7 Shows Figure 6 Bottom view of the internal flow path of the plate of.

[0035] Figure 8 Shows from Figure 1 View of the state after removing the cover from the light-emitting diode turntable of.

[0036] Figure 9 Shows in Figure 1 View of the wafer being held by the chuck pins on the light-emitting diode turntable of.

[0037] Figure 10 Shows a view of heating the wafer by the heating part of the light-emitting diode turntable according to a preferred embodiment of the present invention.

[0038] Figure 11 (a) of shows a view of the wafer being photographed by a thermal imaging camera when the first light-emitting diode operates in the light-emitting diode turntable according to a preferred embodiment of the present invention.

[0039] Figure 11 (b) of shows a view of the wafer being photographed by a thermal imaging camera when the second light-emitting diode operates in the light-emitting diode turntable according to a preferred embodiment of the present invention.

[0040] Figure 11 (c) of shows a view of the wafer being photographed by a thermal imaging camera when the first light-emitting diode and the second light-emitting diode operate in the light-emitting diode turntable according to a preferred embodiment of the present invention.

[0041] [Reference Signs]

[0042] 10: Light-emitting diode turntable

[0043] 100: Main body 110: First hollow

[0044] 111: Connecting component 112: Hole

[0045] 130: Peripheral part 150: Groove part

[0046] 170: Chuck pin 171: Gripping part

[0047] 180: Support pin

[0048] 300: Support column 310: Support column cover

[0049] 500: Heating part 510: Plate

[0050] 511: Second hollow 513: Inflow part

[0051] 515: Outflow part 520: Inclined part

[0052] 521: Inclined surface 530: First light-emitting diode substrate

[0053] 531: First light-emitting diode 550: Second light-emitting diode substrate

[0054] 551: Second light-emitting diode 600: Flow path

[0055] 610: First flow path 611: First bending part

[0056] 620: Second flow path 621: Second bending part

[0057] 630: Third flow path 700: Cover

[0058] 710: Third hollow Detailed implementation mode

[0059] The following content only illustrates the principle of the invention. Therefore, although not explicitly described or illustrated in this specification, those skilled in the art can invent various devices that implement the principle of the invention and are included in the concept and scope of the invention. Additionally, all conditional terms and examples listed in this specification should be understood, in principle, as being clearly explained only for the purpose of understanding the concept of the invention, and not being limited to the specifically listed examples and states as described above.

[0060] The above-mentioned objectives, features, and advantages become more obvious through the following detailed description associated with the drawings. Therefore, those skilled in the art within the technical field to which the invention pertains can easily implement the technical idea of the invention.

[0061] The embodiments described in this specification are explained with reference to sectional views and / or perspective views that are ideal exemplary diagrams of the present invention. Therefore, the embodiments of the present invention are not limited to the specific forms shown, and also include variations in the forms generated according to the manufacturing process.

[0062] Hereinafter, reference will be made to Figures 1 to 11 describe the light-emitting diode turntable 10 according to a preferred embodiment of the present invention.

[0063] Figure 1 is a perspective view of a light-emitting diode turntable according to a preferred embodiment of the present invention, Figure 2 is an exploded perspective view of a light-emitting diode turntable according to a preferred embodiment of the present invention, Figure 3 is Figure 2 a perspective view of the main body of Figure 4 is Figure 2 a perspective view of the heating part of Figure 5 is Figure 2 an exploded perspective view of the heating part of Figure 6 is Figure 5 a perspective view of the plate of Figure 7 is a bottom view showing Figure 6 the internal flow path of the plate of Figure 8 is a view showing the state after removing the cover from the light-emitting diode turntable of Figure 1 Figure 9 is a view showing that a wafer is held by a chuck pin on the light-emitting diode turntable of Figure 1 Figure 10 is a view showing the heating of a wafer by the heating part of the light-emitting diode turntable according to a preferred embodiment of the present invention, Figure 11 In (a) of Figure 11 is a view showing the state of the wafer being photographed by a thermal imaging camera when the first light-emitting diode operates in the light-emitting diode turntable according to a preferred embodiment of the present invention, Figure 11 In (b) of

[0064] As Figure 1 and Figure 2 shown, the light-emitting diode turntable 10 according to a preferred embodiment of the present invention may include the following components: a main body 100, which holds the wafer W and is configured to rotate around the support column 300; the support column 300, which is inserted into the first hollow 110 of the main body 100 and fixes the heating part 500; the heating part 500, which is arranged between the wafer W and the main body to heat the wafer W; the cover 700, which is arranged on the upper part of the main body to cover the heating part 500; and a control part (not shown), which controls the heating part 500.

[0065] ​​The light-emitting diode turntable 10 according to a preferred embodiment of the present invention is a light-emitting diode turntable 10 that holds the wafer W and is configured to rotate to heat the wafer W, and may include a heating unit 500. The heating unit 500 is configured with: a first light-emitting diode group including a plurality of first light-emitting diodes 531 that vertically irradiate the lower surface of the non-peripheral area of the wafer W; and a second light-emitting diode group including a plurality of second light-emitting diodes 551 that obliquely irradiate the lower surface of the peripheral area of the wafer W in the peripheral direction.

[0066] The first light-emitting diode group means a group including a plurality of first light-emitting diodes 531, and the second light-emitting diode group means a group including a plurality of second light-emitting diodes 551.

[0067] The light vertically irradiated from the first light-emitting diode group means the path of the light mainly irradiated when the plurality of first light-emitting diodes 531 operate.

[0068] The light obliquely irradiated in the peripheral direction in the second light-emitting diode group means the path of the light mainly irradiated when the plurality of second light-emitting diodes 551 operate.

[0069] In addition, the peripheral direction means the direction from the center point to the outside of the circle based on the wafer W having a circular shape.

[0070] The peripheral area of the wafer W means the area within the diameter of the wafer W, excluding the length of the area where the first light-emitting diode group including a plurality of first light-emitting diodes 531 is formed in the heating unit 500.

[0071] For example, assume that the radius of the wafer W is 150 mm, and the area where the first light-emitting diode group is formed is an interval with a length of 140 mm from the center point of the wafer W.

[0072] In this case, the peripheral area of the wafer W is the area from the interval with a length of 140 mm from the center point of the wafer W to the interval with a length of 150 mm from the center point of the wafer W.

[0073] The non-peripheral area of the wafer W means the area other than the peripheral area in the entire area of the wafer W.

[0074] Therefore, in the above example, the non-peripheral area of the wafer W is the area from the center point of the wafer W to the interval with a length of 140 mm from the center point of the wafer W.

[0075] The first light-emitting diode group including a plurality of first light-emitting diodes 531 and the second light-emitting diode group including a plurality of second light-emitting diodes 551 are arranged in areas separated from each other.

[0076] In other words, the region where the first light-emitting diode group including a plurality of first light-emitting diodes 531 is disposed and the second light-emitting diode group including a plurality of second light-emitting diodes 551 are disposed independently of each other.

[0077] As Figures 1 to 3 shown, the main body 100 holds the wafer W and is disposed so as to be rotatable about the support column 300. Such a main body 100 is formed to have a generally circular shape as a whole.

[0078] In addition, the main body 100 may include the following components: a first hollow portion 110 formed in the center of the main body for inserting the support column 300; an outer peripheral portion 130 disposed on the outer periphery of the main body 100, in which a plurality of chuck pins 170 and a plurality of support pins 180 for holding the wafer W are arranged; and a groove portion 150 located between the first hollow portion 110 and the outer peripheral portion 130, and a heating portion 500 is positioned above the groove portion 150.

[0079] The first hollow portion 110 is formed in the center of the main body 100. A connecting member 111 is inserted into the first hollow portion 110, and the support column 300 is inserted into a hole 112 of such a connecting member 111. Therefore, the support column 300 can be easily inserted into the first hollow portion 110.

[0080] The support column 300 inserted in this way can be inserted into the second hollow portion 511 and the third hollow portion 710. Therefore, the support column 300 can be inserted into the first hollow portion 110, the second hollow portion 511, and the third hollow portion 710.

[0081] In this case, the support column 300 is only inserted into the first hollow portion 110 and the third hollow portion 710, and is not connected to the first hollow portion 110 and the third hollow portion 710. Therefore, the support column 300 is in a fixed state, and the main body 100 and the cover 700 can rotate relative to each other.

[0082] The support column 300 is inserted into the hole 112 of the connecting member 111, and a support column cover 310 is disposed at the end of the support column 300.

[0083] A heating portion 500 is interposed between such a connecting member 111 and the support column cover 310, thereby connecting the support column 300 and the heating portion 500. With this structure, the support column 300 functions to fix the heating portion 500. Therefore, the support column 300 and the heating portion 500 can be in a fixed state, and the main body 100 and the cover 700 can rotate relative to each other.

[0084] As described above, even if the main body 100 rotates by a driving portion (not shown), the support column 300 and the heating portion 500 do not rotate. In other words, the main body 100 rotates about the support column 300, but the heating portion 500 is fixed to the support column 300.

[0085] That is, in the light-emitting diode turntable 10, the main body 100 rotates around the support column 300 and rotates relative to the heating unit 500.

[0086] An empty space is formed inside the support column 300, and other wires such as wires for supplying power to the plurality of first light-emitting diodes 531 and the plurality of second light-emitting diodes 551 are positioned in such an empty space.

[0087] The peripheral portion 130 is an area disposed on the periphery of the main body 100.

[0088] A plurality of chuck pins 170 and a plurality of support pins 180 are arranged in the peripheral portion 130.

[0089] The plurality of chuck pins 170 are arranged in the peripheral portion 130 such that the distance from the center point of the first hollow 110 to the center point of each of the plurality of chuck pins 170 is the same. In other words, when the center points of the plurality of chuck pins 170 are connected, the plurality of chuck pins 170 can be arranged to form a circle with the center point of the first hollow 110 as the center point.

[0090] The plurality of chuck pins 170 are arranged in the peripheral portion 130 so as to be capable of self-rotation.

[0091] Each of the plurality of chuck pins 170 is provided with a gripping portion 171. The gripping portion 171 is arranged eccentrically with respect to the center point of the plurality of chuck pins 170.

[0092] The plurality of chuck pins 170 are arranged so as to be capable of self-rotation by a driving unit (not shown).

[0093] As the plurality of chuck pins 170 rotate autonomously, the position of the gripping portion 171 can be positioned in a manner facing the outer side direction of the main body 100, or can be positioned in a manner facing the inner side direction of the main body 100.

[0094] According to the above-described configuration, the wafer W can be easily gripped depending on whether the plurality of chuck pins 170 rotate.

[0095] Specifically, when the plurality of chuck pins 170 do not grip the wafer W, the position of the gripping portion 171 is positioned in a manner facing the outer side direction of the main body 100. Therefore, only the periphery of the wafer W is mounted on the upper surface of the region where the gripping portion 171 is not formed among the plurality of chuck pins 170 and is not gripped.

[0096] When the plurality of chuck pins 170 grip the wafer W, the position of the gripping portion 171 is positioned in a manner facing the inner side direction of the main body 100. Therefore, while the periphery of the wafer W is mounted on the upper surface of the region where the gripping portion 171 is not formed among the plurality of chuck pins 170, the gripping portion 171 is brought into contact with the periphery of the wafer W, thereby achieving the gripping of the wafer W.

[0097] A plurality of support pins 180 are arranged in the peripheral portion 130 in such a manner that the distances from the center point of the first hollow 110 to the center points of each of the plurality of support pins 180 are all the same. In other words, when the center points of the plurality of support pins 180 are connected, the plurality of support pins 180 can be arranged to form a circle with the center point of the first hollow 110 as the center point.

[0098] The plurality of support pins 180 function to support the lower surface of the wafer W with the upper surfaces of the plurality of support pins 180.

[0099] In other words, the above-mentioned plurality of chuck pins 170 hold the wafer W while supporting the lower surface of the wafer W, while the plurality of support pins 180 do not hold the wafer W and only function to support the lower surface of the wafer W.

[0100] As Figure 1 , Figure 2 , Figure 3 , Figure 8 and Figure 9 shown, such a plurality of support pins 180 can be arranged beside each of the plurality of chuck pins 170, but differently, the plurality of support pins 180 can also be arranged far away from the plurality of chuck pins 170.

[0101] The groove portion 150 is located between the first hollow 110 and the peripheral portion 130, and a heating portion 500 is positioned above the groove portion 150.

[0102] Therefore, the groove portion 150 functions to provide a space for arranging the heating portion 500 in the main body 100.

[0103] However, since the heating portion 500 is located above the connecting member 111, the heating portion 500 is positioned in a state of not being fixed to the groove portion 150 and being spaced apart from the upper portion of the groove portion 150. Therefore, even if the main body 100 rotates, the heating portion 500 can not rotate.

[0104] The groove portion 150 is formed in such a manner as to be recessed downward in the main body 100. Therefore, the upper surface of the groove portion 150 is formed to have a height lower than the upper surface of the peripheral portion 130. In other words, when observed with reference to the lower surface of the main body 100, the height from the lower surface of the main body 100 to the upper surface of the groove portion 150 is even lower than the height from the lower surface of the main body 100 to the upper surface of the peripheral portion 130.

[0105] The area of the main body 100 is formed to have an area larger than the area of the wafer W held by the light-emitting diode turntable 10. However, the area of the groove portion 150 is formed to have an area smaller than the area of the wafer W held by the light-emitting diode turntable 10.

[0106] In other words, the correlation among the area of the main body 100, the area of the wafer W, and the area of the groove portion 150 satisfies the relationship of "the area of the main body 100 > the area of the wafer W > the area of the groove portion 150".

[0107] A plurality of chuck pins 170 are arranged in such a manner that they are located outside the groove portion 150 on the periphery of the main body 100.

[0108] As Figure 2 and Figures 4 to 7 shown, the heating unit 500 is formed in a generally circular shape as a whole and functions to heat the wafer W.

[0109] The heating unit 500 is located between the wafer W held by the main body 100 and the main body 100 to heat the lower surface of the wafer W.

[0110] The heating unit 500 is disposed on the main body 100 by being located above the groove portion 150.

[0111] In addition, the heating unit 500 may include the following components: a plate 510, on at least a part of whose periphery an inclined portion 520 formed to incline downward more toward the periphery is disposed; a first light-emitting diode substrate 530, disposed on at least a part of the upper surface other than the inclined surface 521 of the inclined portion 520; and a second light-emitting diode substrate 550, disposed on the inclined surface 521 of the inclined portion 520.

[0112] The area where the first light-emitting diode substrate 530 is disposed and the area where the second light-emitting diode substrate 550 is disposed do not overlap with each other.

[0113] As Figure 5 and Figure 6 shown, the inclined portion 520 is disposed on the plate 510.

[0114] The inclined portion 520 is formed at least at a part of the periphery of the plate 510. The inclined portion 520 is formed to incline downward more toward the periphery of the plate 510.

[0115] A plurality of such inclined portions 520 can be disposed.

[0116] As an example, as Figure 5 and Figure 6 shown, an inclined portion 520 is formed at the front periphery of the plate 510, and an inclined portion 520 is formed at the rear periphery of the plate 510, so that a total of two inclined portions 520 can be formed.

[0117] Such inclined portions 520 are preferably disposed symmetrically or oppositely to each other with respect to the center point of the main body 100.

[0118] In contrast to the above, two inclined portions 520 may also be formed in the front region of the plate 510 and two in the rear region of the plate 510, thereby arranging a total of four inclined portions 520.

[0119] In addition, one inclined portion 520 may be formed in the left region of the plate 510, one in the right region of the plate 510, one in the front region of the plate 510, and one in the rear region of the plate 510, thereby arranging a total of four inclined portions 520.

[0120] The inclined portion 520 may be formed such that the angle between the inclined surface 521 and the lower surface of the plate 510 is 3 degrees to 30 degrees, and in particular, the angle is preferably formed to be 19 degrees. This angle may be formed differently according to the lengths of the radius of the wafer W and the radius of the heating portion 500.

[0121] The overall area of the flow path 600 formed in the plate 510 may be determined according to the angle between the inclined surface 521 and the lower surface of the plate 510.

[0122] In other words, when the angle between the inclined surface 521 and the lower surface of the plate 510 is large, the area of the inclined surface 521 increases and the length projected from the inclined surface 521 becomes shorter, so the overall area of the flow path 600 formed in the plate 510 increases. When the angle between the inclined surface 521 and the lower surface of the plate 510 is small, the area of the inclined surface 521 decreases and the length projected from the inclined surface 521 becomes longer, so the overall area of the flow path 600 formed in the plate 510 becomes smaller.

[0123] The first light-emitting diode substrate 530 is disposed on at least a part of the upper surface of the plate 510 other than the inclined surface 521 of the inclined portion 520. In other words, the first light-emitting diode substrate 530 is disposed on the flat surface of the plate 510 other than the inclined surface 521.

[0124] A plurality of first light-emitting diodes 531 are assembled on the first light-emitting diode substrate 530. Therefore, the plurality of first light-emitting diodes 531 are assembled on the first light-emitting diode substrate 530, and the first light-emitting diode substrate 530 is disposed on the upper surface other than the inclined surface 521 of the inclined portion 520.

[0125] Such a plurality of first light-emitting diodes 531 constitute a first light-emitting diode group.

[0126] The first light-emitting diode substrate 530 is disposed on the upper surface other than the inclined surface 521 of the inclined portion 520 such that the lower surface of the first light-emitting diode substrate 530 is parallel to the lower surface of the wafer W mounted on the light-emitting diode turntable 10 and held.

[0127] A plurality of first light-emitting diodes 531 are also arranged on a first light-emitting diode substrate 530 such that the lower surface of each of the plurality of first light-emitting diodes 531 is parallel to the lower surface of a wafer W that is mounted on a light-emitting diode turntable 10 and held.

[0128] A plurality of first light-emitting diode substrates 530 may be provided.

[0129] As an example, as Figure 2 , Figure 4 and Figure 5 shown, one first light-emitting diode substrate 530 is provided in the left region of the plate 510 and one first light-emitting diode substrate 530 is provided in the right region of the plate 510, so that a total of two first light-emitting diode substrates 530 can be provided.

[0130] Such a plurality of first light-emitting diode substrates 530 are preferably arranged such that the areas of the plurality of first light-emitting diodes 531 are symmetric or opposed to each other with respect to the center point of the plate 510. This is to uniformly transfer heat to the wafer W when heating the wafer W by the first light-emitting diodes 531.

[0131] Different from the above, two first light-emitting diode substrates 530 may be provided in the left region of the plate 510 and two first light-emitting diode substrates 530 may be provided in the right region of the plate 510, so that a total of four first light-emitting diode substrates 530 can be provided.

[0132] In addition, one first light-emitting diode substrate 530 may be provided in the left region of the plate 510, one first light-emitting diode substrate 530 may be provided in the right region of the plate 510, one first light-emitting diode substrate 530 may be provided in the front region of the plate 510, and one first light-emitting diode substrate 530 may be provided in the rear region of the plate 510, so that a total of four first light-emitting diode substrates 530 can be provided.

[0133] The first light-emitting diode substrate 530 preferably has a sector shape as a whole. This is to facilitate the arrangement on the upper surface of the plate 510.

[0134] Different from the above, the plurality of first light-emitting diodes 531 may not be assembled to the first light-emitting diode substrate 530 and may be directly assembled to the upper surface of the plate 510 for arrangement.

[0135] A first light-emitting diode group including a plurality of first light-emitting diodes 531 may be directly assembled to the upper surface of the inclined surface 521 of the inclined portion 520 for arrangement. In this case, an electrode for supplying power to the first light-emitting diode group including the plurality of first light-emitting diodes 531 may be formed on the upper surface of the plate 510.

[0136] A first light-emitting diode group including a plurality of first light-emitting diodes 531 may be arranged in a manner of having a plurality of columns formed with respect to the circumferential direction of the plate 510, and in this case, the plurality of columns can be controlled separately by a control unit.

[0137] The first light-emitting diode group including a plurality of first light-emitting diodes 531 may be arranged in a plurality of rows based on the radial direction of the plate 510, and in this case, the plurality of rows can be controlled separately by the control section.

[0138] The first light-emitting diode group including a plurality of first light-emitting diodes 531 heats the wafer W by vertically irradiating the lower surface of the wafer W.

[0139] In this case, the first light-emitting diode group heats the lower surface of the non-peripheral region of the wafer W.

[0140] The second light-emitting diode substrate 550 is provided on the inclined surface 521 of the inclined portion 520 in the plate 510.

[0141] A plurality of second light-emitting diodes 551 are assembled on the second light-emitting diode substrate 550. Therefore, a plurality of second light-emitting diodes 551 are assembled on the second light-emitting diode substrate 550, and the second light-emitting diode substrate 550 is provided on the inclined surface 521 of the inclined portion 520 in the plate 510.

[0142] Such a plurality of second light-emitting diodes 551 constitute a second light-emitting diode group.

[0143] As described above, since the inclined portion 520 is formed to be inclined downward more toward the periphery of the plate 510, the lower surface of the second light-emitting diode substrate 550 in the second light-emitting diode substrate 550 is not parallel to the lower surface of the wafer W held by being mounted on the light-emitting diode turntable 10.

[0144] The included angle between the lower surface of the second light-emitting diode substrate 550 and the lower surface of the wafer W has the same angle as the included angle between the inclined surface 521 of the inclined portion 520 and the lower surface of the plate 510. For example, as described above, when the included angle between the inclined surface 521 of the inclined portion 520 and the lower surface of the plate 510 has an angle of 3 degrees to 30 degrees, the included angle between the lower surface of the second light-emitting diode substrate 550 and the lower surface of the wafer W also has an angle of 3 degrees to 30 degrees.

[0145] Each of the plurality of second light-emitting diodes 551, that is, the lower surface of each of the plurality of second light-emitting diodes 551 is not parallel to the lower surface of the wafer W held by being mounted on the light-emitting diode turntable 10.

[0146] The angle between the lower surface of the second light-emitting diode 551 and the lower surface of the wafer W is the same as the angle between the inclined surface 521 of the inclined portion 520 and the lower surface of the plate 510. For example, as described above, when the angle between the inclined surface 521 of the inclined portion 520 and the lower surface of the plate 510 is in the range of 3 degrees to 30 degrees, the angle between the lower surface of the second light-emitting diode 551 and the lower surface of the wafer W is also in the range of 3 degrees to 30 degrees.

[0147] A plurality of second light-emitting diode substrates 550 may be provided. In this case, the number of the second light-emitting diode substrates 550 may be the same as the number of the inclined portions 520.

[0148] As an example, as Figure 2 , Figure 4 and Figure 5 shown, one second light-emitting diode substrate 550 is provided at the inclined portion 520 formed in the front region of the plate 510, and one second light-emitting diode substrate 550 is provided at the inclined portion 520 formed in the rear region of the plate 510, so that a total of two second light-emitting diode substrates 550 can be provided.

[0149] Preferably, such a plurality of second light-emitting diode substrates 550 are arranged in a manner such that the areas of the plurality of second light-emitting diodes 551 are symmetric or opposed to each other with respect to the center point of the plate 510. This is to uniformly transfer heat to the wafer W when heating the wafer W by the second light-emitting diodes 551.

[0150] Different from the foregoing, a plurality of second light-emitting diode substrates 550 may also be arranged at one inclined portion 520.

[0151] In addition, the number of the second light-emitting diode substrates 550 may be changed according to the number of the inclined portions 520.

[0152] Preferably, the second light-emitting diode substrate 550 has the same shape as the inclined surface 521 of the inclined portion 520, or has a rectangular shape as a whole. This is to facilitate the arrangement on the inclined surface 521 of the inclined portion 520.

[0153] Different from the above, the second light-emitting diode group including a plurality of second light-emitting diodes 551 may not be assembled on the second light-emitting diode substrate 550, but directly assembled on the inclined surface 521 of the inclined portion 520 for arrangement.

[0154] The second light-emitting diode group including a plurality of second light-emitting diodes 551 may be directly assembled on the inclined surface 521 of the inclined portion 520 for arrangement. In this case, electrodes for supplying power to the second light-emitting diode group including a plurality of second light-emitting diodes 551 may be formed on the inclined surface 521 of the inclined portion 520.

[0155] The second light-emitting diode group including a plurality of second light-emitting diodes 551 may be arranged in a manner of having a plurality of columns formed based on the circumferential direction of the plate 510, and in this case, the plurality of columns can be controlled separately by the control unit.

[0156] The second light-emitting diode group including a plurality of second light-emitting diodes 551 may be arranged in a manner of having a plurality of rows formed based on the radial direction of the plate 510, and in this case, the plurality of rows can be controlled separately by the control unit.

[0157] The second light-emitting diode group including a plurality of second light-emitting diodes 551 heats the peripheral region of the wafer W by obliquely irradiating the lower surface of the wafer W in the peripheral direction.

[0158] The first light-emitting diode substrate 530 and the second light-emitting diode substrate 550 are arranged in regions separated from each other.

[0159] In other words, the first light-emitting diode substrate 530 and the second light-emitting diode substrate 550 are independently arranged separately from each other.

[0160] The above-described first light-emitting diode group is arranged across all regions except the second hollow 511 with respect to the center point of the heating unit 500.

[0161] For example, the first light-emitting diode substrate 530 is formed in a fan shape, and the plurality of first light-emitting diodes 531 assembled on the first light-emitting diode substrate 530, that is, the first light-emitting diode group, can be arranged in a plurality of columns along the radius of the fan-shaped first light-emitting diode substrate 530.

[0162] At least a part of the first light-emitting diode group including a plurality of first light-emitting diodes 531 may be arranged in such a way that it is in the same interval of the length from the center point of the heating unit 500 as the second light-emitting diode group including a plurality of second light-emitting diodes 551.

[0163] In other words, at least a part of the first light-emitting diode group including a plurality of first light-emitting diodes 531 assembled on the first light-emitting diode substrate 530 may be arranged in such a way that it is in the same interval of the length from the center point of the heating unit 500 as the second light-emitting diode group including a plurality of second light-emitting diodes 551 assembled on the second light-emitting diode substrate 550.

[0164] For example, when the second light-emitting diode group is arranged in the interval from the length of 120 mm from the center point of the heating unit 500 to the length of 140 mm from the center point of the heating unit 500, at least a part of the first light-emitting diode group may be arranged in the interval from the length of 120 mm from the center point of the heating unit 500 to the length of 140 mm from the center point of the heating unit 500.

[0165] As described above, in the peripheral region of the heating unit 500 from the center point of the self-heating unit 500 to the region where the second light-emitting diode group including a plurality of second light-emitting diodes 551 is disposed, the first light-emitting diode group including a plurality of first light-emitting diodes 531 and the second light-emitting diode group including a plurality of second light-emitting diodes 551 can be disposed simultaneously.

[0166] The first light-emitting diode group is disposed in a radial direction over the entire region on the plate 510 of the heating unit 500, and the second light-emitting diode group is disposed only in the peripheral region on the plate 510 of the heating unit 500. Therefore, the non-peripheral region of the wafer W except the peripheral region is heated by the first light-emitting diode group, and the peripheral region where the temperature deviation occurs is heated by the second light-emitting diode group.

[0167] In the region where the inclined portion 520 is provided in the peripheral region of the plate 510, the first light-emitting diode substrate 530 and the second light-emitting diode substrate 550 can be disposed simultaneously in the circumferential direction. Therefore, in the region where the inclined portion 520 is provided in the peripheral region of the plate 510, the first light-emitting diode group including a plurality of first light-emitting diodes 531 and the second light-emitting diode group including a plurality of second light-emitting diodes 551 can be disposed simultaneously in the circumferential direction.

[0168] In other words, while disposing the plurality of first light-emitting diodes 531, i.e., the first light-emitting diode group, assembled to the first light-emitting diode substrate 530 in the peripheral region of the plate 510 of the heating unit 500 where the inclined portion 520 is disposed, the plurality of second light-emitting diodes 551, i.e., the second light-emitting diode group, assembled to the second light-emitting diode substrate 550 can be disposed.

[0169] With the above-described configuration, the temperature deviation of the wafer W can be effectively prevented.

[0170] Hereinafter, the above description will be described in more detail.

[0171] Different from the above description, assume a structure in which only the first light-emitting diode group is disposed in the non-peripheral region of the heating unit 500 and the second light-emitting diode group is disposed in the peripheral region of the heating unit 500.

[0172] As an example, assume the following situation: The first light-emitting diode group including a plurality of first light-emitting diodes 531 is only arranged in the interval from the center point of the heating unit 500 to a length of 120 mm from the center point of the heating unit 500, and the second light-emitting diode group including a plurality of second light-emitting diodes 551 is arranged in the interval from a length of 120 mm from the center point of the heating unit 500 to a length of 140 mm from the center point of the heating unit 500. In this case, the radius of the wafer W is 150 mm, and the inclination angle of the inclined portion 520 can be set so that the second light-emitting diode group including a plurality of second light-emitting diodes 551 irradiates light to heat the peripheral area of the wafer W, and the peripheral area of the wafer W is the interval from a length of 140 mm from the center point of the wafer W to a length of 150 mm from the center point of the wafer W.

[0173] In the structure as described above, since the first light-emitting diode group including a plurality of first light-emitting diodes 531 irradiates light in the vertical direction, the area that can heat the wafer W is the interval from the center point of the wafer W to a length of 120 mm from the center point of the wafer W.

[0174] In addition, since the second light-emitting diode group including a plurality of second light-emitting diodes 551 irradiates light obliquely in the peripheral direction, the area that can heat the wafer W is the interval from a length of 140 mm from the center point of the wafer W to a length of 150 mm from the center point of the wafer W.

[0175] Therefore, the interval from a length of 120 mm from the center point of the wafer W to a length of 140 mm from the center point of the wafer W is a dead angle area where the first light-emitting diode group and the second light-emitting diode group cannot irradiate light, so a temperature deviation of the wafer W will occur.

[0176] However, as described above, when the first light-emitting diode group including a plurality of first light-emitting diodes 531 is arranged in the interval from the center point of the heating unit 500 to a length of 140 mm from the center point of the heating unit 500, the area that can heat the wafer W by the first light-emitting diode group including a plurality of first light-emitting diodes 531 is the interval from the center point of the wafer W to a length of 140 mm from the center point of the wafer W, so the above-mentioned dead angle area will not occur.

[0177] As described above, the light-emitting diode turntable 10 of the present invention effectively prevents the occurrence of a dead angle area where the wafer W cannot be heated by arranging the first light-emitting diode group in the entire area up to the peripheral area of the heating unit 500, that is, across the radius of the heating unit 500, and arranging the second light-emitting diode group only in the peripheral area of the heating unit 500.

[0178] The intervals between the plurality of second light-emitting diodes 551 of the second light-emitting diode group are preferably arranged in a manner that is denser than the intervals between the first light-emitting diodes 531 of the first light-emitting diode group.

[0179] In particular, the intervals between the plurality of second light-emitting diodes 551 of the second light-emitting diode group are preferably arranged in such a manner that they are denser than the intervals between the plurality of first light-emitting diodes 531 in a partial area of the first light-emitting diode group corresponding to the second light-emitting diode group, that is, in the peripheral area of the first light-emitting diode group.

[0180] This is to more effectively heat the peripheral area of the wafer W in the second light-emitting diode group with a relatively small area.

[0181] The plurality of first light-emitting diodes 531 of the first light-emitting diode group are arranged in a manner of having a plurality of columns and rows in a circular belt shape, that is, the plurality of first light-emitting diodes 531 are arranged radially, and the plurality of second light-emitting diodes 551 of the second light-emitting diode group are preferably arranged in a manner of having a plurality of rows and columns in a matrix shape.

[0182] This is to arrange the plurality of second light-emitting diodes 551 more densely in order to more effectively heat the peripheral area of the wafer W in the second light-emitting diode group with a relatively small area.

[0183] Hereinafter, reference will be made to Figures 5 to 7 The plate 510 will be described in detail.

[0184] The plate 510 may include the following components: an inclined portion 520 formed in at least a part of the periphery of the plate 510 so as to incline downward more towards the periphery of the plate 510; a second hollow 511 formed in the center of the plate 510 for inserting the support column 300; an inflow portion 513 and an outflow portion 515 located at the second hollow 511; and a flow path 600 connecting the inflow portion 513 and the outflow portion 515 and formed inside the plate 510.

[0185] The second hollow 511 is formed at a position corresponding to the first hollow 110 of the main body 100 and the third hollow 710 of the cover 700, whereby the support column 300 can be easily inserted into the first hollow 110, the second hollow 511 to the third hollow 710.

[0186] The inflow portion 513 is positioned so as to be disposed inside the second hollow 511 and functions as a passage for flowing in an external fluid.

[0187] The outflow portion 515 is positioned so as to be disposed inside the second hollow 511 and functions as a passage for allowing the fluid flowing in the flow path 600 to flow out to the outside.

[0188] The flow path 600 connects the inflow portion 513 and the outflow portion 515 and is formed inside the plate 510. The fluid supplied to the inflow portion 513 flows through such a flow path 600 and is then discharged through the outflow portion 515. Such a fluid is a cooling fluid, and the plate 510 can perform the function of cooling the first light-emitting diode 531 and the second light-emitting diode 551 disposed on the plate 510 through such a flow path 600 structure.

[0189] In the flow path 600, after the fluid flowing in from the inflow portion 513 flows from the inside to the outside of the plate 510 in one area, it flows from the outside to the inside of the plate 510 in another area and flows out through the outflow portion 515.

[0190] As an example, the flow path 600 may include the following components: a first flow path 610 connected to the inflow portion 513; a second flow path 620 connected to the outflow portion 515; and a third flow path 630 connecting the first flow path 610 and the second flow path 620.

[0191] The first flow path 610 is disposed in the left inner region of the plate 510.

[0192] One end of the first flow path 610 is connected to the inflow portion 513, and the other end of the first flow path 610 is connected to the third flow path 630.

[0193] The first flow path 610 has a shape in which a plurality of first bending portions 611 are continuous, such that the fluid flowing in from the inflow portion 513 flows from the inside to the outside of the plate 510. In this case, the plurality of first bending portions 611 are formed such that the first bending portion 611 located on the outside is longer than the first bending portion 611 located on the inside.

[0194] The second flow path 620 is disposed in the right inner region of the plate 510.

[0195] One end of the second flow path 620 is connected to the third flow path 630, and the other end of the second flow path 620 is connected to the outflow portion 515.

[0196] The second flow path 620 has a shape in which a plurality of second bending portions 621 are continuous, such that the fluid flowing in through the first flow path 610 and the third flow path 630 flows from the outside to the inside of the plate 510 and is discharged by the outflow portion 515. In this case, the plurality of second bending portions 621 are formed such that the second bending portion 621 located on the outside is longer than the second bending portion 621 located on the inside.

[0197] Such a first flow path 610 and a second flow path 620 have shapes that are symmetric with each other with respect to the center line of the plate 510.

[0198] The third flow path 630 connects the other end of the first flow path 610 and one end of the second flow path 620 to each other. The third flow path 630 is located at the outermost periphery of the flow path 600. In other words, the section where the other end of the first flow path 610 is located, the section where one end of the second flow path 620 is located, and the third flow path 630 form a roughly circular shape at the outermost periphery of the flow path 600.

[0199] Due to the structures of the first flow path 610, the second flow path 620, and the third flow path 630 as described above, the fluid flowing in from the inflow section 513 flows from the inner side to the outer side direction in the left region of the plate 510, and after flowing from the outer side to the inner side direction in the right region of the plate 510, it is discharged through the outflow section 515.

[0200] As described above, as the fluid flows through the flow path 600 in the entire region of the plate 510, the cooling of the plurality of first light emitting diodes 531 and second light emitting diodes 551 disposed on the plate 510 can be realized more effectively.

[0201] Therefore, it is easier to achieve the temperature control of the wafer W by the plurality of first light emitting diodes 531 and the plurality of second light emitting diodes 551, and the life of the light emitting diode turntable 10 is also extended.

[0202] The flow path may also have a configuration different from the above: the fluid flowing in from the inflow section flows from the outer side to the inner side direction of the plate in one region, then flows from the inner side to the outer side direction of the plate in another region, and flows out through the outflow section 515.

[0203] In order to further improve the cooling efficiency of the above-mentioned plate 510, the plate 510 is preferably formed of a metal material with a high thermal conductivity.

[0204] In addition, such a metal material plate 510 can be manufactured by 3D printing. In this case, the thickness of the plate 510 manufactured by 3D printing can be 2 mm to 5 mm.

[0205] The 3D printing for manufacturing the plate 510 is preferably to use the additive manufacturing (AM) 3D printing technology.

[0206] As described above, since the plate 510 is manufactured by 3D printing, a complex flow path 600 structure can be formed even on a plate 510 with a small thickness.

[0207] Therefore, even when the height of the groove portion 150 of the light emitting diode turntable 10 is low, the heating portion 500 can be easily provided. In addition, the compactness of the light emitting diode turntable 10 can be achieved.

[0208] In addition, since the plate 510 is manufactured by 3D printing, it may have high pressure resistance characteristics of the flow path 600 compared to a plate manufactured by a conventional processing method.

[0209] Specifically, in the case of forming a flow path on a plate by a conventional processing method, the plate is divided into an upper plate and a lower plate, and a flow path is formed on at least one of the lower surface of the upper plate and the upper surface of the lower plate, and then the upper plate and the lower plate are joined together. In this case, since the plate is manufactured by joining the upper plate and the lower plate, the pressure resistance characteristics of the flow path are reduced.

[0210] However, in the case of manufacturing the plate 510 by 3D printing, since the flow path 600 can be formed inside by one plate 510, the pressure resistance characteristics of the flow path 600 are improved, the life of the plate 510 is increased, and the cooling fluid can flow more effectively.

[0211] The first flow path 610 and the second flow path 620 of the plate 510 are preferably located below the first light-emitting diode substrate 530 or the first light-emitting diode group including a plurality of first light-emitting diodes 531.

[0212] This is because more heat is generated in the first light-emitting diode group having a relatively larger number ratio than the second light-emitting diode group, so that it can be effectively cooled to control the temperature.

[0213] The area of the plate 510 is preferably greater than or equal to the sum of the areas of the first light-emitting diode substrate 530 and the second light-emitting diode substrate 550. In addition, the area of the plate 510 is preferably greater than or equal to the sum of the areas of the first light-emitting diode group including a plurality of first light-emitting diodes 531 and the second light-emitting diode group including a plurality of second light-emitting diodes 551.

[0214] The reason is that since the area of the plate 510 that functions as a cooling function increases, it is easier to control the temperature of the plurality of first light-emitting diodes 531 assembled on the first light-emitting diode substrate 530 and the plurality of second light-emitting diodes 551 assembled on the second light-emitting diode substrate 550.

[0215] As Figure 1 and Figure 2 shown, the cover 700 is provided on the upper part of the main body to cover the heating part 500.

[0216] The cover 700 is preferably formed of a transparent material so that irradiation can be easily achieved by the first light-emitting diode 531 and the second light-emitting diode 551 of the heating part 500 disposed below the cover 700. For example, the cover 700 can be formed of quartz as a transparent material.

[0217] A third hollow 710 is formed in the center of the cover 700, and the support column 300 is inserted into the third hollow 710.

[0218] The control unit is connected to a plurality of first light-emitting diodes 531 of the first light-emitting diode substrate 530 and a plurality of second light-emitting diodes 551 of the second light-emitting diode substrate 550 of the heating unit 500 to function as a control unit for the heating unit 500.

[0219] In this case, the first light-emitting diodes 531 and the second light-emitting diodes 551 can be controlled individually.

[0220] In other words, the control unit can control the plurality of first light-emitting diodes 531 and the plurality of second light-emitting diodes 551 individually by controlling the first light-emitting diode substrate 530 and the second light-emitting diode substrate 550 individually.

[0221] In addition, as described above, the control unit can control multiple columns or multiple rows of the plurality of first light-emitting diodes 531 individually, and can control multiple columns or multiple rows of the plurality of second light-emitting diodes 551 individually.

[0222] As described above, by using the control unit to control the plurality of first light-emitting diodes 531 and the plurality of second light-emitting diodes 551 individually, when it is necessary to precisely heat the periphery of the wafer W, the plurality of second light-emitting diodes 551 can be operated individually.

[0223] Hereinafter, with reference to Figures 8 to 11 , a case of heating the wafer W by the heating unit 500 of the light-emitting diode turntable 10 according to the preferred embodiment of the present invention described above will be described.

[0224] As described above, in the case of the present invention, the plurality of first light-emitting diodes 531 and the plurality of second light-emitting diodes 551 are only arranged in a part of the area of the heating unit. However, in the wafer cleaning process, since the wafer W rotates together with the main body 100, irradiation through the first light-emitting diodes 531 and the second light-emitting diodes 551 is performed uniformly over the entire area of the wafer W, whereby heating of the entire area of the wafer W can be achieved.

[0225] As Figure 8 shown, the heating unit 500 is located in an area other than the periphery of the light-emitting diode turntable 10.

[0226] As Figure 9 shown, when the wafer W is mounted and held on the light-emitting diode turntable 10 by the chuck pins 170, the wafer W covers the entire area of the heating unit 500 and a part of the area of the outer peripheral portion 130 of the main body 100.

[0227] As described above, the area of the light-emitting diode turntable 10 is formed to have an area larger than the area of the wafer W held by the light-emitting diode turntable 10. However, the area of the heating unit 500 is formed to have an area smaller than the area of the wafer W held by the light-emitting diode turntable 10.

[0228] In other words, the correlation among the area of the light-emitting diode turntable 10, the area of the wafer W, and the area of the heating unit 500 satisfies the relationship of "the area of the light-emitting diode turntable 10 > the area of the wafer W > the area of the heating unit 500".

[0229] As Figure 11 shown, a plurality of first light-emitting diodes 531 of the first light-emitting diode substrate 530 assembled to the heating unit 500 vertically irradiate the lower surface of the wafer W. In addition, a plurality of second light-emitting diodes 551 of the second light-emitting diode substrate 550 assembled to the heating unit 500 irradiate the lower surface of the wafer W obliquely along the outside.

[0230] As described above, by inclining the irradiation direction outward, the plurality of second light-emitting diodes 551 can heat the periphery of the wafer W.

[0231] In this way, the light-emitting diode turntable 10 of the present invention heats the lower surface of the non-peripheral region of the wafer W through the first light-emitting diode group including a plurality of first light-emitting diodes 531, and heats the lower surface of the peripheral region of the wafer W through the second light-emitting diode group including a plurality of second light-emitting diodes 551, so that the entire region of the wafer W can be heated uniformly.

[0232] Through Figure 11 (a) to (c) of can visually confirm the heating of the wafer W of the present invention.

[0233] Figure 11 (a) to (c) of are diagrams showing the heating state of the wafer W by a thermal imaging camera, and show the state with the highest heat in a color close to white.

[0234] As Figure 11 shown in (a) of, when the control unit controls the first light-emitting diode substrate 530 to operate only the first light-emitting diode group, that is, a plurality of first light-emitting diodes 531, the peripheral region of the wafer W cannot be properly heated compared to the non-peripheral region.

[0235] As Figure 11 shown in (b) of, when the control unit controls the second light-emitting diode substrate 550 to operate only the second light-emitting diode group, that is, a plurality of second light-emitting diodes 551, only the peripheral region of the wafer W is heated.

[0236] As Figure 11As shown in (c) thereof, when the control unit controls the first light-emitting diode substrate 530 and the second light-emitting diode substrate 550 so that the plurality of first light-emitting diodes 531 and the plurality of second light-emitting diodes 551, that is, the first light-emitting diode group and the second light-emitting diode group both operate, it is possible to uniformly heat the peripheral region and the non-peripheral region of the wafer W.

[0237] In particular, in Figure 11 the case of (c), it can be confirmed that the entire area of the wafer W is uniformly heated, and the wafer W is heated to a high temperature as a whole.

[0238] As described above, the light-emitting diode turntable 10 according to the preferred embodiment of the present invention is different from the conventional light-emitting diode turntable that cannot properly heat the periphery of the wafer W when the area of the heating unit is smaller than the area of the wafer, and can achieve heating of the peripheral region of the wafer W, thereby effectively preventing the cleaning liquid from remaining on the surface of the peripheral region of the wafer W during the cleaning process of the wafer W and causing the pattern of the wafer W to collapse.

[0239] As described above, although the present invention has been described with reference to the preferred embodiments of the present invention, those of ordinary skill in the relevant technical field can make various modifications or variations to the present invention without departing from the spirit and scope of the present invention described in the following claims.

Claims

1. A light-emitting diode turntable, comprising: A main body that holds a wafer and is configured to be rotatable; And A heating unit that is disposed between the wafer and the main body to heat the wafer, The heating unit includes: A plate, at least a part of the periphery thereof is configured to form an inclined portion that is inclined downward more toward the periphery; A first light-emitting diode group, disposed on at least a part of the upper surface of the plate except for the inclined surface of the inclined portion; and A second light-emitting diode group, disposed on the inclined surface of the inclined portion, Wherein the second light-emitting diode group is only disposed in the periphery of the plate of the heating unit to heat the periphery of the wafer.

2. The light-emitting diode turntable according to claim 1, wherein The main body includes: A first hollow formed in the center of the main body for a pillar to be inserted; A peripheral portion disposed on the periphery of the main body, and a plurality of chuck pins for holding the wafer are arranged; And A groove portion located between the first hollow and the peripheral portion, and the heating unit is positioned above the groove portion.

3. The light-emitting diode turntable according to claim 2, wherein The plurality of chuck pins are located on the periphery of the main body more than the heating unit.

4. The light-emitting diode turntable according to claim 1, wherein The first light-emitting diode group is assembled on a first light-emitting diode substrate, and the first light-emitting diode substrate is disposed on at least a part of the upper surface of the plate except for the inclined surface of the inclined portion, The second light-emitting diode group is assembled on a second light-emitting diode substrate, and the second light-emitting diode substrate is disposed on the inclined surface of the inclined portion in the upper surface of the plate.

5. The light-emitting diode turntable according to claim 1, wherein The plate includes: A second hollow formed in the center of the plate for a pillar to be inserted; An inflow portion and an outflow portion located at the second hollow; And A flow path that connects the inflow portion and the outflow portion and is formed inside the plate.

Images