Device having a semiconductor device emitting electromagnetic radiation and method for manufacturing the same

Abstract

A device (1) is described, comprising a plurality of optoelectronic semiconductor components (10), an output coupling element (20), an electrically insulating insulating layer (30), and an electrical connection structure (40). The semiconductor components (10) are arranged in a common plane, and each semiconductor component (10) is laterally delimited by a side surface (10A). The semiconductor components (10) each have a semiconductor body (100), an active region (2000) configured to emit electromagnetic radiation, a radiation exit side (100A) for outputting the electromagnetic radiation, a back side (100B) opposite to the radiation exit side (100A), and a contact structure (101) arranged on the back side (100B). The insulating layer (30) is arranged between the side surfaces (10A) of adjacent semiconductor components (10) and is implemented to absorb or reflect radiation generated in the active region (2000). The coupling-out element (20) is arranged on the radiation exit side (100A) of the semiconductor component (10), and the electrical connection structure (40) is arranged on the side of the semiconductor component (10) facing the back side (100B) and is electrically conductively connected to the contact structure (101). A method for producing the device (1) is also described.

Description

Technical Field

[0001] A device and a method for producing the device are described. Summary of the invention

[0002] The arrangement comprises a plurality of optoelectronic semiconductor components. One object to be achieved is to specify an arrangement which allows optoelectronic semiconductor components to be mounted in a simplified manner.

[0003] A further object to be achieved is to specify a method for producing a device which is easy to produce.

[0004] The arrangement is, in particular, an arrangement of optoelectronic semiconductor components which emit electromagnetic radiation, for example light, during operation.

[0005] According to at least one embodiment of the device, the device has a plurality of optoelectronic semiconductor components. The optoelectronic semiconductor components each include a semiconductor body having an active region configured to emit electromagnetic radiation. The active region preferably includes a pn junction, a double heterostructure, a single quantum well structure (SQW) or a multi-quantum well structure (MQW) for generating radiation.

[0006] In different semiconductor components, the active regions can be respectively arranged to emit electromagnetic radiation with different wavelengths. For example, a first semiconductor component is arranged to emit electromagnetic radiation in the red spectral range, a second semiconductor component is arranged to emit electromagnetic radiation in the green spectral range, and a third semiconductor component is arranged to emit electromagnetic radiation in the blue spectral range. Such a device is, for example, a pixel of a display unit and can emit mixed radiation in any color within the color space spanned by the three semiconductor components. For example, these semiconductor components are flip chips. Flip chips are characterized, among other things, in that they have a radiation exit surface without contact structures.

[0007] Furthermore, the semiconductor components each comprise a radiation exit side for coupling out electromagnetic radiation and a back side opposite the radiation exit side. A contact structure is arranged on the back side of the semiconductor body. The contact structure is formed with an electrically conductive material, in particular a metal. The semiconductor component is electrically contacted by means of the contact structure and the current required for operation is supplied to the semiconductor component. By arranging the contact structure on the back side, coupling out electromagnetic radiation on the radiation exit side is not hindered. The radiation exit side is advantageously free of contact structures.

[0008] The semiconductor components are preferably arranged in a common plane and are each laterally delimited by side surfaces. The side surfaces extend over the semiconductor body and the contact structure. The lateral extent of the semiconductor components is typically in the range of 10 μm to 200 μm and is, for example, 90 μm×130 μm.

[0009] According to at least one embodiment of the device, the device comprises an insulating layer, which is arranged between the side surfaces of adjacent semiconductor devices. The insulating layer is implemented as an electrical insulator. For example, the insulating layer is formed with a dielectric. The insulating layer is implemented to absorb or reflect radiation generated in the active region. In particular, the insulating layer is implemented to absorb or reflect visible electromagnetic radiation. The thickness of the insulating layer is in the range of 0.5 μm to 150 μm, with the endpoints included. The insulating layer is, for example, a layer that has absorption only over a partial range of the visible spectrum and thus produces a color impression for an observer. For example, the insulating layer first absorbs radiation in the blue and green spectral ranges, thus producing a red color impression for the observer. In particular, the insulating layer has a structured portion or pattern in its lateral extension, for example to represent a manufacturer's logo.

[0010] According to at least one embodiment of the device, the device comprises a coupling-out element, which is arranged on the radiation exit side of the semiconductor component. The coupling-out element is embodied in particular to be transmissive to the electromagnetic radiation generated in the active region. The coupling-out element preferably has a structuring for improving the coupling-out of radiation.

[0011] According to at least one embodiment of the device, the device comprises an electrical connection structure which is arranged on a side of the semiconductor component facing the rear side and is electrically conductively connected to the contact structure. The electrical connection structure is provided in particular for electrically contacting the optoelectronic semiconductor component.

[0012] According to at least one embodiment of the device, the device comprises a plurality of optoelectronic semiconductor components, an outcoupling element, an electrically insulating insulation layer and an electrical connecting structure, wherein

[0013] - the semiconductor components are arranged in a common plane and each semiconductor component is laterally delimited by side surfaces,

[0014] - the semiconductor devices respectively have

[0015] a semiconductor body having an active region arranged to emit electromagnetic radiation,

[0016] a radiation output side for coupling out the electromagnetic radiation,

[0017] a back side opposite to said radiation exit side, and

[0018] a contact structure arranged on the back side,

[0019] the insulating layer is arranged between side faces of adjacent semiconductor components and is embodied to absorb or reflect radiation generated in the active region,

[0020] the outcoupling element is arranged on the radiation exit side of the semiconductor body, and

[0021] The electrical connection structure is arranged on that side of the semiconductor component which faces the rear side and is electrically conductively connected to the contact structure.

[0022] The device described here is based in particular on the following considerations: In order to manufacture an optical display device having a plurality of devices and requiring the highest possible density of the devices, it is advantageous to use an arrangement with the smallest possible lateral extension. When using semiconductor devices with a small lateral extension, the physical arrangement and electrical contacting of a plurality of devices each having a plurality of optoelectronic semiconductor devices may be associated with difficulties. Due to the need for a high level of placement accuracy, the small side length of the semiconductor device makes installation, for example by means of a bonding process, more difficult. In addition, it is desirable to mount the semiconductor device on the mounting surface with the smallest possible inclination relative to the mounting surface. Thereby, the emission behavior of all optoelectronic semiconductor devices can be achieved as uniform as possible.

[0023] The device described here makes use of the idea of ​​mounting a plurality of semiconductor components, each with their radiation exit side, on a carrier, which semiconductor components can be contacted from the back side and have a contactless radiation exit side. Subsequently, the contact structures of the semiconductor components arranged on the back side can be contacted in an electrically conductive manner by means of connecting structures. The use of connecting structures enables simple contacting of the semiconductor components with a small lateral extension. For example, mounting with the smallest possible inclination can be achieved by using spherical connectors formed from solder material.

[0024] According to at least one embodiment of the device, the semiconductor body has a semiconductor layer sequence and a radiation-permeable substrate. The active region is arranged in the semiconductor layer sequence. The substrate is arranged on the side of the semiconductor layer sequence opposite to the contact structure. For example, the substrate is formed of sapphire. Sapphire is advantageously permeable to electromagnetic radiation in the visible spectral range. The substrate forms a radiation exit surface of the semiconductor device. The semiconductor layer sequence is in particular epitaxially grown on the substrate. Sapphire is particularly suitable as a growth substrate for a semiconductor layer sequence that emits radiation, preferably a semiconductor layer sequence based on a nitride compound semiconductor material.

[0025] According to at least one embodiment of the device, the coupling-out element is formed by a glass substrate. The thickness of the glass substrate is between 0.03 mm and 3 mm, inclusive. The glass substrate contributes in particular to the mechanical stabilization of the device. The glass substrate is embodied to be radiation-transmissive, in particular transparent or translucent, for the radiation generated in the active region.

[0026] Furthermore, the coupling-out element can also be formed from other radiation-transparent materials. For example, the coupling-out element can be formed from a polymer, in particular from epoxy resin, acrylate, polyethylene terephthalate (PET) or silicone, a radiation-transparent ceramic or polysiloxane.

[0027] In accordance with at least one embodiment of the device, the outcoupling element has, on its side facing away from the semiconductor body, a structuring for coupling out electromagnetic radiation generated in the active region. Such a structuring can be produced, for example, by means of sandblasting or in an etching process using hydrofluoric acid.

[0028] According to at least one embodiment of the device, the coupling-out element is formed by a series of radiation-permeable areas and absorption areas within its lateral extension. In this case, a radiation-permeable area is assigned to each optoelectronic semiconductor device. In other words, a radiation-permeable area is preferably aligned with a semiconductor device. The coupling-out elements combined in this way are especially formed of plastic. The alignment of the radiation-permeable area with the semiconductor device enables electromagnetic radiation to be emitted from the semiconductor device without hindrance. The absorption area is arranged around the edge of each device. The absorption area thus reduces or avoids optical crosstalk from adjacent devices. Reduced optical crosstalk can improve the contrast between adjacent devices.

[0029] According to at least one embodiment of the device, a second radiation-permeable region having a different refractive index than the radiation-permeable region is introduced into the radiation-permeable region. For example, the second radiation-permeable region acts as a lens. In particular, the second radiation-permeable region reduces the divergence of the electromagnetic radiation emitted by the optoelectronic semiconductor component. Each second radiation-permeable region is aligned with one optoelectronic semiconductor component in the lateral direction.

[0030] According to at least one embodiment of the device, the insulating layer completely covers the coupling-out element between the side surfaces of the semiconductor components. In other words, the insulating layer extends from the side surface of one semiconductor component to the side surface of another semiconductor component in the lateral direction. The insulating layer can be configured to be continuous except for the radiation exit side of the semiconductor component. The insulating layer is particularly embodied to absorb electromagnetic radiation in the visible spectral range. As a result, interfering reflections of ambient light on the device can be advantageously reduced.

[0031] According to at least one embodiment of the device, the insulating layer completely covers the side of the semiconductor device. The insulating layer can advantageously reduce the lateral radiation emission from the semiconductor device. Thus, the optoelectronic semiconductor device implemented as a volume emitter can simulate the emission characteristics of a surface emitter without generating shadows in the light path. Similar spatial radiation characteristics can be advantageously produced by semiconductor devices that are configured to emit electromagnetic radiation in different spectral ranges. Similar spatial emission behavior can advantageously bring a uniform color impression to observers from different viewing angles. In addition, in particular when the device is observed from the side, the black impression is also increased, and the contrast between adjacent devices is increased. In addition, advantageously, the brightness of the semiconductor device can be adjusted by means of the arrangement of the insulating layer on the side. Thus, for example, the brightness can be adjusted so that the operating current of the optoelectronic semiconductor device can be selected to be greater than 0.5 mA. The typical driver circuit of the semiconductor device outputs an operating current in the range of 0.5 mA. Therefore, the electrical control of the device is advantageously simplified.

[0032] According to at least one embodiment of the device, a reflective coating is provided on the side of the semiconductor device, or a cavity with a reflective interface is formed between the insulating layer and the side. The reflective coating is formed, for example, of a metal, in particular Ag or Al, or a silicone, epoxy or acrylate filled with titanium dioxide particles. The cavity with a reflective interface is preferably formed of a material having a refractive index lower than the refractive index of the material surrounding the cavity. For example, the recess is filled with MgF or air. At the interface of the cavity, there is a jump in the change of the refractive index, which may cause electromagnetic radiation to be reflected. Compared with the absorption of the side radiation emission, the reflection of the side radiation emission of the optoelectronic semiconductor device leads to an advantageously improved efficiency. The radiation appearing on the side is at least partially reflected back into the semiconductor device and can therefore be coupled out through the radiation exit side of the semiconductor device.

[0033] According to at least one embodiment of the device, the thickness of the insulating layer corresponds to the thickness of the semiconductor device. The thickness of the semiconductor device and the insulating layer respectively corresponds to their dimensions transversely or perpendicularly to their respective main extension directions. The thickness of the semiconductor device is composed of the thickness of the semiconductor body and the thickness of the contact structure. If the thickness of the insulating layer and the thickness of the semiconductor device are of the same size, the insulating layer is used to planarize the device and enable simple further contacting of the device. In order to match the thickness of the insulating layer and the thickness of the semiconductor device, for example, an insulating layer that is specifically designed to be particularly thick can be used. In particular, a particularly thick insulating layer is applied by means of Dam&Fill or FAM (Film Assisted Transfer Molding). Therefore, in order to adapt the thickness of the insulating layer and the semiconductor device, the thickness of the semiconductor device can also be reduced. For example, by using horizontal µLEDs, the thickness of which is only between 3µm and 30µm.

[0034] According to at least one embodiment of the device, the semiconductor device is at least partially arranged in a recess of the coupling-out element. By arranging the semiconductor device in the cavity, an already flat surface can be advantageously produced on the side of the coupling-out element facing the back side of the semiconductor device. The flat surface makes it easier to contact the optoelectronic semiconductor device. For example, the recess is produced by means of an etching method. The surface, shape and depth of the recess are preferably the same within a device.

[0035] According to at least one embodiment of the device, the electrical connection structure comprises an adhesion layer formed from one of the following materials on the side facing the contact structure: Ti, Cr, Ni, Pd. The adhesion layer can be used as an adhesion promoter layer between the contact structure and the connection structure. The thickness of the adhesion layer is in particular in the range of 0.5 μm to 5 μm. For example, the adhesion layer is applied to the contact structure by means of sputtering.

[0036] According to at least one embodiment of the device, the electrical connection structure is applied as a conductive layer on the insulating layer. The connection structure is conductively connected to the contact structure and is configured to supply the optoelectronic semiconductor device with the current required for operation. In particular, the connection structure is applied to the insulating layer in a form-fitting manner. The connection structure is applied to the insulating layer as a film, for example. The connection structure preferably has a thickness in the range of from 5 μm to 20 μm. The width of the connection structure is advantageously between 30 μm and 60 μm. The connection structure is applied to the insulating layer, for example, by means of electrodeposition. Therefore, in order to produce a conductive connection between the contact structure and the connection structure, an adhesive or solder material can be advantageously omitted. In other words, there is in particular no adhesive material or solder material between the contact structure and the connection structure.

[0037] In accordance with at least one embodiment of the device, the electrical connection structure is electrically conductively connected to a connection body, which preferably forms a ball grid array (BGA) or a land grid array (LGA).

[0038] The BGA is formed by a sphere comprising a solder material. In particular, the diameter of the solder ball is between 50 μm and 200 μm, preferably 180 μm. The BGA formed with solder balls is used to make electrical contact with the semiconductor device, in particular as a spacer between the semiconductor device and the circuit board on which the semiconductor device is mounted. Here, direct physical contact between the semiconductor device and the circuit board located thereunder is avoided. With the aid of the mounting of the BGA, different thermal expansion coefficients between the mounting substrate and the semiconductor device can be advantageously buffered. For example, the solder balls can be applied by means of solder ball jetting or group ball placement. Alternatively, a solder paste can be printed, which is then formed into solder balls by heating.

[0039] The LGA can be formed by a connector with a flat, pillow-shaped extension. The connector of the LGA is formed, for example, from a solder material. A flat connector is advantageously combined with a flat surface, since a flat surface allows only a small distance or no distance between the mounting carrier and the semiconductor component. Thus, mounting can be advantageously performed with particularly small deviations from a layer parallel to the mounting substrate.

[0040] According to at least one embodiment of the device, a second insulating layer is arranged on the side of the device facing away from the coupling-out element, the second insulating layer serving to mechanically stabilize the device. For example, the second insulating layer is formed from epoxy resin or silicone resin. In particular, the second insulating layer has a thickness of at least 50 μm and serves to mechanically stabilize the device. The second insulating layer can be applied to the device, for example, by means of Dam & Fill, by molding or by lamination.

[0041] According to at least one embodiment of the device, the coupling-out element has a groove surrounding the edge. For example, the surrounding groove can be produced by means of sawing, etching or by glass molding. The groove surrounding the edge reduces the optical crosstalk of adjacent devices, thereby advantageously increasing the optical contrast between adjacent devices. In addition, the groove can be filled with an absorbing material, for example, by means of spraying, dispensing or printing. Filling the groove with an absorbing material can further reduce the crosstalk of adjacent devices. The groove can be arranged on the side away from the semiconductor device or on the side facing the semiconductor device. The groove extends in the coupling-out element and preferably does not completely penetrate the coupling-out element.

[0042] A method for producing a device is also described. The device can be produced in particular by means of the method described here. This means that all disclosed features related to the method for producing the device are also disclosed for the device, and vice versa.

[0043] According to at least one embodiment of the method for producing a device, a carrier is provided and a radiation-transmissive connecting layer is provided on a first side of the carrier. For example, the carrier is formed from a mechanically stable material and preferably has a flat surface on the first side. The radiation-transmissive connecting layer is preferably formed from an acrylate, epoxy, silicone or a hybrid material. The connecting layer preferably has a uniform thickness over its entire lateral extent and has no meniscus structures or only very small meniscus structures on the side surfaces of the semiconductor component.

[0044] The connection layer is applied, for example, by centrifugation, spraying, slot coating, injection, stamping, printing or dispensing. The connection layer is applied in particular over the entire surface of the first side of the carrier or preferably only in the following areas on the first side of the carrier which are subsequently selected for mounting semiconductor components. When silicone is used as the material for the connection layer, it is advantageous to apply the connection layer only in the areas which are later selected for mounting semiconductor components in order to avoid that the silicone material has an anti-adhesive effect.

[0045] According to at least one embodiment of the method for producing a device, a plurality of optoelectronic semiconductor components are provided, wherein each semiconductor component is laterally delimited by side surfaces. The semiconductor components each have a semiconductor body having an active region provided for emitting electromagnetic radiation, a radiation exit side for coupling out the electromagnetic radiation, a back side opposite the radiation exit side, and a contact structure arranged on the back side. Furthermore, each semiconductor component is applied with its radiation exit side to a connection layer.

[0046] According to at least one embodiment of the method for producing a device, an electrically insulating insulation layer is arranged on the first side of the carrier. For example, the insulation layer can be applied by means of Dam&Fill or FAM.

[0047] According to at least one embodiment of the method for producing a device, the contact structure is exposed. The contact structure covered by the insulating layer is exposed by means of a structuring method to achieve electrical contact.

[0048] According to at least one embodiment of the method for manufacturing the device, the connection structure is arranged on the side of the semiconductor device facing the back side. The arrangement of the connection structure is used to make electrical contact with the contact structure and thus supply the operating current to the optoelectronic semiconductor device. The arrangement of the connection structure is preferably carried out by means of a planar interconnection method. In the planar interconnection method, an adhesion layer formed by Ti, Cr, Ni or Pd is first applied to the contact structure by means of sputtering. Subsequently, a growth layer is applied on the adhesion layer formed, for example, by means of sputtering. In a further step, a connection layer formed by Cu can be electrodeposited on the growth layer. The connection structure formed by means of the planar interconnection method preferably includes an adhesion layer, a growth layer and a connection layer.

[0049] According to at least one embodiment of the method for producing a device, the carrier is formed from a radiation-transmissive material and thus forms a coupling-out element together with the connecting layer. The coupling-out element is used to couple out electromagnetic radiation generated in the optoelectronic semiconductor component. The carrier preferably has a structured portion for coupling out the radiation on its side facing away from the semiconductor component. Such a structured portion can be produced, for example, by means of sandblasting or an etching process using hydrofluoric acid.

[0050] According to at least one embodiment of the method for producing a device, the carrier is separated and the connecting layer forms the coupling-out element. The requirements on the radiation transparency of the carrier are thus advantageously reduced, since the carrier is separated before the semiconductor device is completed. Therefore, the carrier can also be formed from a radiation-impermeable material. The connecting layer is preferably formed from a radiation-permeable material having a structured portion for coupling out electromagnetic radiation.

[0051] According to at least one embodiment of the method for producing a device, the carrier has a structuring on its side facing the connecting layer, which is embossed into the connecting layer. The carrier leaves the negative of its structuring in the connecting layer. Thus, for example, the connecting layer can be structured by the structuring of the carrier itself. Thus, when the carrier is subsequently separated from the connecting layer, a remaining structuring is ensured for coupling out radiation on the connecting layer. The connecting layer can advantageously be used as a structured coupling-out element.

[0052] According to at least one embodiment of the device, a protective layer is arranged on the side of the connecting structure facing away from the insulating layer. The protective layer can protect the underlying layers from external environmental influences. Protecting the connecting structure from moisture advantageously reduces the risk of metal ion migration, thereby reducing the risk of short circuits. In particular, the protective layer does not completely cover the connecting structure. The protective layer preferably has a solder resist effect. For example, the protective layer serves to laterally delimit the connector at the location of the connecting structure that is not covered by the protective layer.

[0053] According to at least one embodiment of the device, a reflective layer is arranged between the outcoupling element and the insulating layer. The reflective layer is preferably formed of a metal. With the aid of the reflective layer, the appearance of the device in a switched-off state in which the semiconductor device is not in operation can be adjusted. For example, if the reflective layer is formed of Ag, the device can be perceived as a mirror. The reflective layer can also be formed of a metal oxide, for example to provide a semi-transparent mirror.

[0054] According to at least one embodiment of the device, a coupling-out layer is arranged on the radiation exit side. The coupling-out layer is preferably formed from a radiation-transmissive material having a structured portion for coupling out radiation. For example, the coupling-out layer is applied to the radiation exit side and / or the insulation layer by means of spraying, embossing or laminating.

[0055] According to at least one embodiment of the device, the coupling-out element has a plurality of scattering centers, which are introduced into the coupling-out element by means of an internal glass engraving. The scattering centers can advantageously homogenize the coupling-out of electromagnetic radiation. The targeted arrangement of the scattering centers preferably reduces crosstalk of adjacent devices.

[0056] According to at least one embodiment of the device, a separation layer is arranged between the insulating layer and the outcoupling element. The separation layer is formed, for example, from a polymer. Under the action of electromagnetic radiation and / or an increase in temperature, the separation layer can facilitate the separation of the outcoupling element from the insulating layer.

[0057] According to at least one embodiment, the connector comprises a core and a shell. The core is formed of a material having a higher melting point than the shell material. For example, a core formed of Cu or Ni is surrounded by a shell made of a solder material. The shell preferably completely surrounds the core. This advantageously allows a connector to be formed which has a defined diameter after the shell has melted. The distance between the semiconductor device and the mounting carrier thus corresponds at least to the diameter of the core. A connector designed in this way also has a higher stability against crack formation.

[0058] The subject matter of the present application also relates to a plurality of devices, such as a module comprising a plurality of devices. The plurality of devices in the module may be formed by devices having the same features, but may also be formed by devices having different features, as described herein. All features of a device described within the scope of the present application are to be understood as features. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] Further advantages and advantageous designs and developments of the device result from the following exemplary embodiments, which are shown in the figures.

[0060] 1A and 1B show a schematic top view ( FIG. 1A ) and a cross-sectional view ( FIG. 1B ) of a plurality of devices described here according to a first exemplary embodiment. Figure 1B ),

[0061] Figures 2A to 2F Schematic cross-sectional views of several of the devices described here and an enlarged cross-sectional view of a device according to a second exemplary embodiment are shown ( Figure 2B and 2D ), at various stages of their manufacturing method,

[0062] Figure 3 shows a schematic cross-sectional view of a plurality of devices described here according to a third embodiment,

[0063] Figure 4 shows a schematic cross-sectional view of a plurality of devices described here according to a fourth embodiment,

[0064] Figure 5 shows a schematic cross-sectional view of a plurality of devices described here according to a fifth embodiment,

[0065] Figure 6 shows a schematic cross-sectional view of a plurality of devices described here according to a sixth embodiment,

[0066] Figure 7 shows a schematic cross-sectional view of a plurality of devices described here according to a seventh embodiment,

[0067] Figure 8 shows a schematic cross-sectional view of a plurality of devices described here according to an eighth embodiment,

[0068] Fig. 9 shows a schematic cross-sectional view of a plurality of devices described here according to a ninth embodiment,

[0069] Fig.10 shows a schematic cross-sectional view of a plurality of devices described here according to a tenth embodiment,

[0070] Fig.11 shows a schematic cross-sectional view of a plurality of devices described herein according to an eleventh embodiment,

[0071] Fig.12 shows a schematic cross-sectional view of a plurality of devices described here according to a twelfth embodiment,

[0072] Fig.13 shows a schematic cross-sectional view of a plurality of devices described here according to a thirteenth embodiment,

[0073] Fig.14 shows a schematic cross-sectional view of a plurality of devices described here according to a fourteenth embodiment,

[0074] Fig.15 shows a schematic cross-sectional view of a plurality of devices described here according to a fifteenth embodiment,

[0075] Fig.16 shows a schematic cross-sectional view of a plurality of devices described here according to a sixteenth embodiment,

[0076] Fig.17 shows a schematic cross-sectional view of a plurality of devices described here according to a seventeenth embodiment,

[0077] Fig.18 shows a schematic cross-sectional view of a plurality of devices described here according to an eighteenth embodiment,

[0078] Fig.19 shows a schematic cross-sectional view of a plurality of devices described here according to a nineteenth embodiment,

[0079] Fig. 20 shows a schematic top view of a plurality of devices described here according to a twentieth embodiment,

[0080] Fig.21 shows a schematic top view of a plurality of devices described here according to a twenty-first embodiment,

[0081] Fig. 22 shows a schematic top view of a plurality of devices described here according to a twenty-second embodiment,

[0082] Fig.23 shows a schematic top view of a plurality of devices described here according to a twenty-third embodiment,

[0083] Fig.24 shows a schematic top view of a device described herein according to a 24th embodiment,

[0084] Fig.25 shows a schematic top view of a plurality of devices described herein according to a twenty-fifth embodiment,

[0085] Fig.26 shows a schematic cross-sectional view of a plurality of devices described herein according to a twenty-sixth embodiment,

[0086] Fig. 27 shows a schematic cross-sectional view of a plurality of devices described herein according to a twenty-seventh embodiment,

[0087] Fig.28 shows a schematic cross-sectional view of a plurality of devices described herein according to a twenty-eighth embodiment,

[0088] Fig.29A and 29BSchematic top views of a plurality of devices described herein according to the 29th embodiment are shown ( Fig.28 A) and cross-sectional view ( Fig.28 B),

[0089] Fig. 30A and Fig. 30B shows a plurality of schematic cross-sectional views of a device described herein according to a thirtieth embodiment at various stages of a method for its manufacture,

[0090] Fig.31 shows a schematic cross-sectional view of a plurality of devices described herein according to a 31st embodiment,

[0091] Fig.32 shows a schematic cross-sectional view of a plurality of devices described herein according to a thirty-second embodiment,

[0092] Fig.33 shows a schematic cross-sectional view of a plurality of devices described herein according to a thirty-third embodiment,

[0093] Fig.34A and 34B shows schematic cross-sectional views of a plurality of devices described herein according to a thirty-fourth embodiment at various stages of a method for manufacturing the device,

[0094] Fig.35 shows a schematic cross-sectional view of a plurality of devices described herein according to a thirty-fifth embodiment,

[0095] Fig.36 shows a schematic cross-sectional view of a plurality of devices described herein according to a thirty-sixth embodiment,

[0096] Fig.37 shows a schematic cross-sectional view of a plurality of devices described herein according to a thirty-seventh embodiment,

[0097] Fig.38 shows a schematic cross-sectional view of a plurality of devices described herein according to a thirty-eighth embodiment,

[0098] Fig.39 shows a schematic cross-sectional view of a plurality of devices described herein according to a 39th embodiment,

[0099] Fig.40 shows a schematic cross-sectional view of a plurality of devices described herein according to a 40th embodiment,

[0100] Fig.41 shows a schematic cross-sectional view of a plurality of devices described herein according to a 41st embodiment,

[0101] Fig.42shows a schematic cross-sectional view of a plurality of devices described here according to a forty-second embodiment,

[0102] Fig.43 shows a schematic cross-sectional view of a plurality of devices described herein according to a 43rd embodiment, and

[0103] Fig.44 A plurality of schematic cross-sectional views of a device described herein according to a forty-fourth embodiment are shown.

[0104] The same, same type or equivalent elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements shown in the figures should not be considered to be drawn to scale. On the contrary, for better display and / or better understanding, the individual elements may be shown with exaggerated size.

[0105] FIG. 1A shows a schematic top view of a plurality of devices 1 described here according to a first embodiment. Each device 1 extends to a dividing line marked with T. The dividing line T delimits the device 1 in its lateral extension. The separation of a plurality of devices 1 is carried out, for example, along the dividing line T. The devices 1 each include a plurality of optoelectronic semiconductor devices 10 having a connecting structure 40. The connecting structures 40 of the semiconductor devices 10 are each electrically conductively connected to a connecting body 50. For example, the device 1 can be easily mounted on a printed circuit board with the aid of the connecting body 50. Each device 1 includes a connecting body 50 that is not electrically connected to one of the connecting structures 40. In other words, each device 1 includes at least one connecting body 50 that is not electrically contacted. When the device 1 is mounted on a printed circuit board, the non-electrically contacted connecting body 50 can be used for mechanical stabilization.

[0106] The optoelectronic semiconductor components 10 are laterally spaced apart from each other, arranged in a common plane and configured to emit electromagnetic radiation. Each optoelectronic semiconductor component 10 is configured to emit electromagnetic radiation having different wavelengths. For example, the optoelectronic semiconductor components 10 are respectively configured to emit light in the red, green or blue spectral range. Each device 1 represents, for example, a pixel of an optical display device or display. In particular, each device 1 is used as a pixel of a video wall. In particular, the semiconductor component 10 is a flip chip having a semiconductor layer sequence 1000, which has been grown on a substrate 1001 formed of sapphire.

[0107] Figure 1BA plurality of cross-sectional views of the devices 1 described here according to a first embodiment are shown. The cross-sectional views correspond to a cross section along the section line Z of the schematic top view of the device 1 described here shown in FIG. 1A . Each device 1 comprises an optoelectronic semiconductor device 10 having a semiconductor body 100 and a plurality of contact structures 101. The semiconductor body 100 comprises a radiation exit side 100A provided for coupling out electromagnetic radiation and a back side 100B opposite the radiation exit side 100A. The semiconductor device 10 is delimited by the side surface 10A in its lateral extension. The contact structure 101 is located on the back side 100B of the semiconductor device 10. Each contact structure 101 is electrically conductively connected to the connection structure 40.

[0108] The semiconductor component 10 is applied with the radiation exit side 100A on a carrier 600. An electrically insulating insulation layer 30 extending between the side faces 10A of the semiconductor component 10 is applied on the carrier 600. The insulation layer 30 is designed to absorb the electromagnetic radiation generated in the semiconductor component 10. Therefore, the insulation layer 30 produces a dark or black impression for the observer. Thereby, interfering reflections from ambient light can be advantageously reduced.

[0109] The connection structure 40 is arranged on the insulating layer 30 and is conductively connected to the connecting body 50. Therefore, the operating current is supplied to each semiconductor device 10 by means of the connection structure 40. The connection structure 40 is manufactured by means of a planar interconnection method and applied to the insulating layer 30. The planar interconnection method is similar to a redistribution layer method (RDL). The connection structure 40 is formed of Cu. The width of the connection structure 40 is between 30 μm and 60 μm.

[0110] Figures 2A to 2F A plurality of schematic cross-sectional views of a device 1 described here according to a second embodiment are shown, as well as enlarged sections of a device 1. The cross-sectional views shown here are obtained at different stages of the method for producing the device 1.

[0111] Figure 2A It is shown that a carrier 600 is provided. The carrier 600 is formed of a radiation transparent material. The thickness of the carrier 600 is 250 μm.

[0112] Figure 2B Shown are schematic cross-sectional views of a plurality of devices 1 in a further step of the method for manufacturing the device 1, as well as enlarged sections of the device 1. Elements shown in the enlarged sections may be partially not shown in other figures in order to ensure a better overview.

[0113] The structure of the optoelectronic semiconductor component 10 is reproduced in the enlarged fragment. The optoelectronic semiconductor component 10 comprises a contact structure 101 and a semiconductor body 100. The semiconductor body 100 has a substrate 1001 and a semiconductor layer sequence 1000. The semiconductor layer sequence 1000 has been grown on the substrate 1001. An active region 2000 provided for emitting electromagnetic radiation is arranged in the semiconductor layer sequence 1000. The semiconductor body 100 has a radiation exit side 100A and a back side 100B opposite to the radiation exit side 100A. The contact structure 101 is arranged on the back side 100B of the semiconductor body 100. Therefore, the electromagnetic radiation generated in the active region 2000 during operation can be emitted unimpeded on the radiation exit side 100A opposite to the back side 100B. The optoelectronic semiconductor component 10 has a side surface 10A, which laterally delimits the optoelectronic semiconductor component 10. The side surface 10A extends from the contact structure 101 to the substrate 1001 of the semiconductor layer sequence 1000. The lateral dimensions of the semiconductor component 10 are typically in the range of 10 μm to 200 μm, in particular in the range of 80 μm to 150 μm, and are, for example, 90 μm x 130 μm. The thickness of the semiconductor component 10 is 80 μm.

[0114] The semiconductor device 10 is mounted on the carrier 600 with its side facing the radiation exit side 100A by means of a connection layer 601. The connection layer 601 is formed of acrylate, epoxy, silicone or a mixed material. The connection layer 601 is implemented to be transparent to the electromagnetic radiation generated in the active area 2000. In particular, the connection layer 601 is implemented to be transparent to the generated radiation, in particular transparent. The connection layer 601 is applied to the carrier 600 over the entire surface. For example, the connection layer 601 is applied to the carrier 600 by means of centrifugation, printing or dispensing. Alternatively, the connection layer 601 can be applied only to those positions on the carrier 600 where the semiconductor device 10 is placed.

[0115] Figure 2C A schematic cross-sectional view of a plurality of devices 1 described here according to a second embodiment is shown in a further step of its production method. An optically insulating insulating layer 30 is applied to a carrier 600 and extends from a side surface 10A of a semiconductor device 10 to a side surface 10A of an adjacent semiconductor device 10. In other words, the insulating layer 30 completely covers the carrier 600, except for the lateral extension of the semiconductor device 10. The side surface 10A of the semiconductor device 10 is also completely covered by the insulating layer 30. Advantageously, a device 1 can thus be produced that gives a black impression to an observer and reduces undesired reflections on the device 1. The insulating layer 30 is formed of an epoxy resin or a silicone resin. In particular, the material of the insulating layer 30 is filled with particles of an absorbing material.

[0116] Figure 2DA plurality of schematic cross-sectional views of a device 1 described here according to a second embodiment in a further step of its production method are shown, as well as an enlarged cross section of the device 1. A connecting structure 40 is applied to the insulating layer 30. The exact layer structure of the connecting structure 40 can be seen in the enlarged section of the device 1. The elements shown in this enlarged section may not be partially shown in other figures in order to ensure a better overview.

[0117] First, an adhesion layer 400 is applied to the contact structure 101, and the adhesion layer 400 is formed, for example, of palladium, nickel, chromium or titanium. The adhesion layer is preferably applied by sputtering. The thickness of the adhesion layer is 5nm to 500nm. Another growth layer 401 is applied on the adhesion layer 400, and the other growth layer 401 is formed, for example, of copper. The growth layer 401 is preferably applied by sputtering. The thickness of the growth layer 401 is 0.5μm to 2μm. The connection layer 402 is applied to the growth layer 401, for example, by electrodeposition. The connection structure 40 applied in this way can be called a planar interconnect. It can also be seen from the enlarged fragment of the optoelectronic semiconductor device 10 that the insulating layer 30 completely covers the side 10A of the optoelectronic semiconductor device 10. The insulating layer 30 can also be located between the contact structures 101. The insulating layer 30 can provide improved protection between the contact structures to prevent short circuits. For the sake of clarity, the illustrations in other figures can be omitted.

[0118] Figure 2E A schematic cross-sectional view of a plurality of devices 1 described herein according to a second embodiment in another step of a method for manufacturing the same is shown. A protective layer 32 is applied to a connection structure 40. The protective layer 32 is formed, for example, of an electrically insulating material. For example, the protective layer 32 is formed of an epoxy resin, a silicone resin, or an acrylate. The protective layer 32 has a solder resist effect, thereby preventing the liquid solder from undesirably lateral diffusion on the surface of the connection structure 40. A connector 50 is arranged at a recess of the protective layer 32. For example, the connector 50 is applied in the form of a solder ball and is electrically conductively connected to the connection structure 40. The connector 50 has a diameter of 150 μm to 200 μm.

[0119] Figure 2F A schematic cross-sectional view of a plurality of devices 1 described here according to a second embodiment in a further step of their production method is shown. The surface of the carrier 600 is structured on the side facing away from the optoelectronic semiconductor component 10. For example, the structuring is carried out in the form of roughening by means of sandblasting or in an etching process using hydrofluoric acid. The surface structured in this way advantageously increases the outcoupling efficiency of the electromagnetic radiation emitted from the optoelectronic semiconductor component 10. The carrier 600 forms an outcoupling element 20 for coupling out electromagnetic radiation from the device 1.

[0120] Figure 3A plurality of schematic cross-sectional views of a device 1 described here according to a third embodiment are shown. The third embodiment corresponds essentially to the second embodiment. In the third embodiment, the connecting body 50 comprises a core 500 and a shell 501 , respectively.

[0121] The core 500 is formed, for example, of nickel or copper. The housing 501 is formed, in particular, of a solder material. The core 500 has a higher melting point than the material of the housing 501 surrounding it. Thus, a defined distance between the optoelectronic semiconductor component 10 and other mounting surfaces can be advantageously ensured during the soldering process. The minimum distance corresponds to the diameter of the core 500. It is also advantageous that the connector 50 constructed in this way forms fewer cracks, thereby improving the reliability of the optoelectronic semiconductor component 10.

[0122] Figure 4 A plurality of schematic cross-sectional views of a device 1 described here are shown according to a fourth embodiment. The fourth embodiment corresponds essentially to the second embodiment.

[0123] The connecting body 50 comprises a copper structure and a solder material applied to the copper structure. The copper structure is applied to the connecting structure 40 and has a cylindrical shape. The axis of rotation of the cylinder extends perpendicularly to the main extension plane of the device 1. On the side of the copper structure facing away from the connecting structure 40, a solder material is arranged, which is provided for electrically contacting the connecting body 50. Advantageously, the distance between the optoelectronic semiconductor component 10 and the subsequent mounting surface can be adjusted by the height of the copper structure.

[0124] Figure 5 Schematic cross-sectional views of a plurality of devices 1 described here according to a fifth embodiment are shown. The carrier 600 has a plurality of recesses 21, in each of which both a semiconductor device 10 and a portion of the insulating layer 30 are introduced. In other words, each semiconductor device 10 is embedded in the carrier 600. For example, the carrier 600 may be formed by a glass substrate with a plurality of cavities etched therein.

[0125] The connecting structure 40 is arranged on the insulating layer 30 and is electrically conductively connected to the connecting body 50. The connecting body 50 is designed as a flat, pillow-shaped area made of a solder material. The connecting body 50 is delimited in its lateral extent by the protective layer 32. By embedding the optoelectronic semiconductor component 10 in the carrier 600, a flat surface is advantageously generated on the side of the carrier 600 facing the semiconductor component 10. The flat surface advantageously facilitates further contacting by means of the connecting body 50. Due to the already flat surface, spacers are advantageously no longer required.

[0126] Figure 6A plurality of schematic cross-sectional views of the device 1 described here according to the sixth exemplary embodiment are shown. The sixth exemplary embodiment corresponds substantially to the fifth exemplary embodiment. In the sixth exemplary embodiment shown here, the insulating layer 30 has a thickness corresponding to the thickness of the optoelectronic semiconductor component 10, and the carrier 600 does not include a recess 21. The thickness of the insulating layer D thus completely compensates for the height of the optoelectronic semiconductor component 10. This advantageously simplifies the further arrangement of the connection structure 40 and the connecting body 50. The connecting body 50 is designed as a flat, pillow-shaped solder surface.

[0127] Figure 7 A plurality of schematic cross-sectional views of the device 1 described here according to the seventh embodiment are shown. The seventh embodiment corresponds substantially to the sixth embodiment. The insulating layer 30 is applied to the carrier 600 by means of a lamination method. In this case, the insulating layer 30 has a recess in advance, the position and size of which correspond to the position and size of the optoelectronic semiconductor component 10 within a certain tolerance. The gap remaining between the applied optoelectronic semiconductor component 10 and the insulating layer 30 due to the tolerance is filled by means of a molded body 33. The molded body 33 is formed of an electrically insulating material with optical absorption. The side surface 10A of the semiconductor component 10 is completely covered by the molded body 33. As a result, electromagnetic radiation emitted laterally from the side surface 10A is advantageously reduced or prevented from passing through the molded body 33.

[0128] Figure 8 A plurality of schematic cross-sectional views of the device 1 described here according to the eighth embodiment are shown. The eighth embodiment corresponds essentially to the sixth embodiment. In the eighth embodiment shown here, the thickness D of the optoelectronic semiconductor component 10 is reduced so that the thickness of the insulating layer 30 itself is sufficient to completely compensate for the thickness of the optoelectronic semiconductor component 10. In other words, the thickness D of the insulating layer 30 corresponds to the thickness of the semiconductor component 10. The thickness of the optoelectronic semiconductor component 10 corresponds to between 3 μm and 30 μm. The thickness D of the insulating layer thus completely compensates for the height of the optoelectronic semiconductor component 10. This advantageously facilitates the further arrangement of the connection structure 40 and the connecting body 50. The connecting body 50 is designed as a flat, pillow-shaped solder surface.

[0129] Fig. 9A plurality of schematic cross-sectional views of the device 1 described here according to the ninth embodiment are shown. In the ninth embodiment, the optoelectronic semiconductor device 10 is contacted by means of a connection structure 40 in the form of a bonding wire. In particular, the connection structure 50 is implemented as a ball, that is, a reverse bonding connection stitched on the ball is possible because of the particularly low ring height of the bonding wire. The small ring height advantageously reduces the minimum thickness of the device 1. The insulating layer 30 is locally applied to the carrier 600. The connecting body 50 is arranged on the insulating layer 30. The connecting body 50 includes a copper structure and a solder material applied to the copper structure. The copper structure has a cylindrical shape, the axis of rotation of which is oriented perpendicular to the main extension plane of the device 1. An under-bump metallization (UBM) in the form of an ENEPIG (chemical nickel plating, chemical palladium plating, immersion gold) coating is arranged on the copper structure. The copper structure is electrically conductively connected to the contact structure 101 by means of a connection structure 40 in the form of a bonding wire.

[0130] For the mechanical stability of the connection structure 40, the side of the carrier 600 facing the semiconductor device 10 is encapsulated by a molded body 33. The molded body 33 is embodied to be electrically insulating and optically absorbing. For example, the molded body 33 is formed of an epoxy or silicone in which filler material particles are embedded. The carrier 600 has a structured portion and a groove 22 surrounding the edge on the side facing away from the semiconductor device 10. The groove 22 reduces the waveguide effect in the carrier 600 and reduces the optical crosstalk from the adjacent device 1. The structured portion of the carrier 600 leads to an improved coupling-out of the electromagnetic radiation from the device 1.

[0131] Fig.10 A plurality of schematic cross-sectional views of the device 1 described here according to the tenth embodiment are shown. The tenth embodiment corresponds essentially to the second embodiment. In the tenth embodiment shown here, a coupling-out layer 602 is applied to a carrier 600. The coupling-out layer 602 can, for example, comprise a film or other radiation-permeable carrier with a structured portion for coupling out electromagnetic radiation. The coupling-out layer 602 forms a coupling-out element 20 together with the carrier 600.

[0132] Fig.11 A schematic cross-sectional view of a plurality of devices 1 described here according to an eleventh exemplary embodiment is shown. The eleventh exemplary embodiment of the plurality of devices 1 shown here comprises a plurality of semiconductor components 10, which have a radiation exit side 100A and a back side 100B opposite the radiation exit side 100A and are laterally delimited by side surfaces 10A. The side surfaces 10A are completely covered by an insulating layer 30 which is embodied as optically absorbing. The insulating layer 30 is arranged laterally between the semiconductor components 10. A connecting structure 40, a protective layer 32 and a connecting body 50 are applied on the insulating layer.

[0133] The connection layer 601 is arranged on the side of the insulating layer 30 that is away from the semiconductor device 10. For example, after the semiconductor device 10 and the insulating layer 30 are mounted on the carrier 600, the carrier 600 is separated from the connection layer 601 again. This advantageously eliminates the waveguide effect that occurs in the carrier 600. As a result, the optical crosstalk between adjacent devices 1 can be reduced. The remaining connection layer 601 can then be structured to further improve the coupling-out of electromagnetic radiation. The connection layer 601 serves as a coupling-out element 20.

[0134] Fig.12 A plurality of schematic cross-sectional views of the device 1 described here according to a twelfth embodiment are shown. The twelfth embodiment corresponds essentially to the eleventh embodiment. In the twelfth embodiment of the device 1 shown here, a second insulating layer 31 is applied on the side of the insulating layer 30 opposite the coupling-out layer 602. The second insulating layer is introduced in the region between the connector 50 and the protective layer 32. For example, the second insulating layer can be formed with epoxy resin or acrylate. The second insulating layer 31 further contributes to the mechanical stability of the device 1.

[0135] Fig.13 Schematic cross-sectional views of a plurality of devices 1 described here according to a thirteenth embodiment are shown. The thirteenth embodiment corresponds essentially to the second embodiment. The embodiment of the device 1 shown here comprises a structured carrier 600 having structures for coupling out electromagnetic radiation emitted in the optoelectronic semiconductor component 10. In addition, grooves 22 are introduced into the carrier 600 around the edges. For example, the grooves 22 can be introduced into the carrier 600 by means of sawing, scribing or a glass mold. The grooves 22 reduce the waveguide effect in the carrier 600, thereby contributing to reducing the optical crosstalk of adjacent devices 1.

[0136] Fig.14 A plurality of schematic cross-sectional views of the devices 1 described here according to a fourteenth embodiment are shown. The fourteenth embodiment corresponds essentially to the second embodiment. The fourteenth embodiment shown here comprises a carrier 600 in which a plurality of scattering centers 603 are introduced. The position and size of the scattering centers 603 can be varied and can be arranged, for example, on the edge side of the device 1. Thereby, for example, a desired emission behavior can be achieved, or optical crosstalk from adjacent devices 1 can be reduced. Alternatively, the scattering centers 603 can also be arranged directly above the region of the optoelectronic semiconductor device 10, in order to ensure, for example, better color mixing and more uniform emission of different semiconductor devices 10. The scattering centers 603 can be produced, for example, by means of internal laser engraving.

[0137] Fig.15Schematic cross-sectional views of a plurality of devices 1 described here according to a fifteenth embodiment are shown. The fifteenth embodiment corresponds essentially to the second embodiment. The fifteenth embodiment shown here comprises grooves 22 which are implemented in the carrier 600 to surround one device 1 at the edge in each case. The grooves 22 are filled with optically absorbing material to further reduce crosstalk of adjacent devices 1. The absorbing material may comprise, for example, a silicone or epoxy resin filled with absorbing particles.

[0138] Fig.16 A plurality of schematic cross-sectional views of the device 1 described here according to the sixteenth embodiment are shown. The sixteenth embodiment corresponds essentially to the second embodiment. The sixteenth embodiment shown comprises a cavity 71 on the side 10A of the semiconductor device 10. The cavity 71 is formed, for example, by the introduction of a thermally unstable material and subsequent temperature cycling. The cavity 71 is, for example, a void filled with air and has a lower refractive index than the material surrounding them. The cavity 71 can thereby reduce or prevent electromagnetic radiation from being coupled out of the side 10A of the optoelectronic semiconductor device 10 by means of total reflection. The radiation coupled out from the side region 10A is at least partially reflected back into the semiconductor device 10 again. This can advantageously improve the efficiency of the semiconductor device 10.

[0139] Fig.17 A plurality of schematic cross-sectional views of the device 1 described here according to the seventeenth embodiment are shown. The seventeenth embodiment corresponds essentially to the second embodiment. In the seventeenth embodiment shown here, the side 10A of the semiconductor device 10 and the interface between the carrier 600 and the insulating layer 30 are covered by a reflective coating 70. The reflective coating 70 can be, for example, a thin metal layer or a layer formed by an electrically insulating material. For example, the reflective coating comprises a silicone layer filled with titanium dioxide. The reflective coating 70 is used to reflect light emitted laterally from the optoelectronic semiconductor device 10 back to the optoelectronic semiconductor device 10. In addition, by coating the insulating layer 30 with the reflective layer 70, a bright or reflective impression of the device 1 can be produced for the observer.

[0140] Fig.18 A plurality of schematic cross-sectional views of the device 1 described here according to the eighteenth exemplary embodiment are shown. The eighteenth exemplary embodiment corresponds essentially to the second exemplary embodiment. In the exemplary embodiment shown here, a reflective coating 70 in the form of a silicone filled with titanium dioxide is applied to the side surface 10A of the optoelectronic semiconductor component 10. The reflective coating 70 completely covers the side surface 10A of the optoelectronic semiconductor component 10 and extends up to the carrier 600 and the insulation layer 30.

[0141] Fig.19 A plurality of schematic cross-sectional views of a device 1 described here according to a nineteenth embodiment are shown. The nineteenth embodiment corresponds essentially to the second embodiment. Fig.19The nineteenth embodiment shown in FIG. 1 shows a simple possibility for cutting different devices 1 from a continuous carrier 600. The devices 1 are separated from each other by separation grooves at the separation positions marked with T. A connecting layer 601, which can be thermally or optically dissolved, is applied between the device 1 and the carrier 600. When the device 1 is separated from the carrier 600 by dissolving the connecting layer 601, the device 1 is automatically cut.

[0142] Fig. 20 1 shows a schematic top view of a device 1 described here according to a twentieth embodiment. The twentieth embodiment corresponds essentially to the first embodiment. Fig. 20 In the top view of the twentieth embodiment shown, the wiring of the device 1 can be seen. Each device 1 comprises a plurality of optoelectronic semiconductor devices 10 and a plurality of connection structures 40. Each connection structure 40 ensures the electrical connection of the optoelectronic semiconductor device 10 to the connecting body 50. The cathode and anode connectors of each semiconductor device 10 are connected to one of the connecting bodies 50. Four devices 1 form a module that can be mounted together, for example on a printed circuit board. The edge length of the device 1 is preferably 0.9375 mm. This wiring allows the anode and cathode to be easily interchanged by rotating the device 1 180° laterally.

[0143] Fig.21 A schematic top view of a plurality of devices 1 described here according to a twenty-first embodiment is shown. The twenty-first embodiment corresponds substantially to the twentieth embodiment. According to the twenty-first embodiment, the wiring of the optoelectronic semiconductor components 10 is designed so that the cathodes of all optoelectronic semiconductor components 10 are grounded. A plurality of semiconductor components 10 share a connecting body 50 for connecting their cathodes. This advantageously reduces the number of connecting bodies 50. This can result in a greater distance between the optoelectronic semiconductor components 10 on the carrier 600. In addition, the wiring plane can be omitted during subsequent installation.

[0144] Fig. 22 A schematic top view of a plurality of devices 1 described here according to a twenty-second embodiment is shown. The devices 1 are arranged side by side laterally in a plane and are electrically contacted by means of first and second connecting lines 51, 52. The first connecting lines 51 are arranged in the vertical direction, while the second connecting lines 52 are arranged in the horizontal direction. The connecting lines ensure the electrical connection of all optoelectronic semiconductor components 10 of all devices 1. Each semiconductor component 10 can be controlled individually. Thus, for example, pixel-precise control of the devices 1 in an optical display unit can be achieved.

[0145] Fig.23A schematic top view of a plurality of devices 1 described here according to a twenty-third embodiment is shown. The twenty-third embodiment corresponds essentially to the twenty-second embodiment. The twenty-third embodiment shown here shows a plurality of devices 1 with wiring according to the model of the twenty-first embodiment. By surrounding the cathode, the second connecting line 52 is advantageously eliminated and all optoelectronic semiconductor components 10 can be fully contacted by means of a single-layer connecting line 51. Each semiconductor component 10 can be individually controlled. Thus, for example, pixel-precise control of the device 1 in an optical display unit can be achieved.

[0146] Fig.24 1 shows a schematic top view of a device 1 described here according to a twenty-fourth exemplary embodiment. The twenty-fourth exemplary embodiment corresponds essentially to the twentieth exemplary embodiment. The device 1 comprises three semiconductor components 10, which are each electrically conductively connected by means of a contact structure 40 and a connecting structure 50. The device can be applied to a mounting carrier and used, for example, as a pixel of a video wall.

[0147] Fig.25 A schematic top view of a plurality of devices 1 described here according to a twenty-fifth embodiment is shown. The twenty-fifth embodiment corresponds essentially to the twenty-fourth embodiment. The twenty-fifth embodiment shows a module formed by a total of twenty-four devices 1. Such a module can advantageously facilitate the installation of an optical display unit.

[0148] Fig.26 Schematic cross-sectional views of a plurality of devices 1 described here according to a twenty-sixth embodiment are shown. The twenty-sixth embodiment corresponds substantially to the second embodiment. An optically reflective layer 34 is arranged between the carrier 600 and the insulating layer 30. The optically reflective layer 34 completely covers the interface between the carrier 600 and the insulating layer 30, except for the region around the optoelectronic semiconductor device 10. For example, the reflective layer 34 is formed of a metal or titanium dioxide. Thus, an observer of the device 1 can have a reflective or bright impression.

[0149] Fig. 27 A plurality of schematic cross-sectional views of a device 1 described here according to a twenty-seventh embodiment are shown. The twenty-seventh embodiment corresponds essentially to the second embodiment. In this case, the insulating layer 30 is formed by a colored reflective material. Thus, for example, a red appearance of the device 1 in its closed state can be achieved. For example, such a device 1 can be used particularly advantageously in a rear light of a motor vehicle.

[0150] Fig.28A plurality of schematic cross-sectional views of the device 1 described here according to the twenty-eighth embodiment are shown. The twenty-eighth embodiment corresponds essentially to the second embodiment. A reflective layer 34 is applied to the side of the carrier 600 facing away from the optoelectronic semiconductor component 10. The reflective layer applied in this way is equivalent to a semi-transparent mirror, so that when the device 1 is in the closed state, the observer has the impression of a reflective surface.

[0151] Fig.29A A schematic top view of a plurality of devices 1 described here according to a twenty-ninth embodiment is shown. The twenty-ninth embodiment corresponds essentially to the eighth embodiment. An integrated circuit 8 is arranged between four devices 1. These devices 1 are controlled together by the integrated circuit 8. The integrated circuit 8 is electrically connected by means of a connector 50. The integrated circuit 8 is connected to each optoelectronic semiconductor component 10 and can ensure individual, pixel-precise control of the optoelectronic semiconductor component 10. In particular, the integrated circuit 8 is an active matrix IC.

[0152] Fig.29B A schematic cross-sectional view of a device 1 described here according to a twenty-ninth exemplary embodiment is shown. In this schematic cross-sectional view, it can be seen that the integrated circuit 8 is arranged in the same plane as the optoelectronic semiconductor component 10. The connecting body 50 can be positioned next to the optoelectronic semiconductor component 10 or also directly above the optoelectronic semiconductor component 10, for example.

[0153] Fig. 30A A schematic cross-sectional view of a plurality of devices 1 described here according to a thirtieth embodiment in a first stage of a method for manufacturing the same is shown. A plurality of devices 1 having semiconductor devices 10 are arranged on a carrier 600 and are electrically contacted by means of a connection structure 40. A connection body 50 connected to the connection structure 40 is arranged directly above the semiconductor device 10. The connection structure 40 comprises a plurality of layers, each of which is separated from one another by a protective layer 32.

[0154] Fig. 30B A schematic cross-sectional view of a device 1 described here according to a thirtieth exemplary embodiment is shown in a further step of its production method. An integrated circuit 8 is applied to a connecting body 50. The integrated circuit is used to control all semiconductor components 10. A filling body 80 separates the integrated circuit 8 from the connecting body 50 and the optoelectronic semiconductor components 10. The filling body is formed from silicone, epoxy or acrylate.

[0155] Fig.31A plurality of schematic cross-sectional views of the device 1 described here according to the 31st embodiment are shown. The 31st embodiment corresponds essentially to the eleventh embodiment. The device 1 shown here comprises an insulating layer 30 and a second insulating layer 31 as well as a connecting layer 601 and a coupling-out layer 602. The second insulating layer is applied on the side of the insulating layer 30 opposite to the coupling-out layer 602. The second insulating layer 31 is introduced between the insulating layer 30 and the connecting structure 40 for planarization and mechanical stabilization of the device 1. The second insulating layer is formed of silicone, epoxy or acrylate. The connector 50 is a flat pillow-shaped area formed of a solder material.

[0156] Fig.32 A plurality of schematic cross-sectional views of the device 1 described here according to the 32nd exemplary embodiment are shown. The 32nd exemplary embodiment corresponds essentially to the 31st exemplary embodiment. The 32nd exemplary embodiment has a connection body 50 in the form of a solder ball. For planarizing the connection body 50, a molded body 33 is applied to the side of the protective layer 32 facing away from the optoelectronic semiconductor component 10. The molded body 33 serves for further mechanical stabilization and planarization of the device 1. The molded body 33 is formed, for example, from acrylate, epoxide or silicone.

[0157] Fig.33 A schematic cross-sectional view of a plurality of devices 1 described here according to a 33rd embodiment is shown. The 33rd embodiment corresponds essentially to the twelfth embodiment. The devices 1 shown here are arranged on a common printed circuit board 9. The printed circuit board 9 comprises a plurality of connection surfaces 90 and serves as an electrically conductive carrier for the devices 1.

[0158] Fig.34A A plurality of schematic cross-sectional views of the device 1 described here according to the 34th embodiment are shown. The 34th embodiment corresponds essentially to the second embodiment. The device 1 shown here comprises a separation layer 604 in addition to the carrier 600 and the connecting layer 601. The separation layer 604 is arranged between the connecting layer 601 and the carrier 600. The separation layer 604 is a layer that can be separated or dissolved, for example by means of heat or light-induced radiation. Thus, for example, the carrier 600 can be easily separated from the device 1 in a subsequent separation step.

[0159] The carrier 600 shown here has a structuring on its side facing the connection layer 601. The structuring of the carrier 600 is embossed as a negative into the connection layer 601. After the carrier 600 has been separated, the negative of the structuring remains in the connection layer 601, so that the connection layer 601 already has a structuring for coupling out radiation.

[0160] Fig.34BA schematic cross-sectional view of a plurality of devices 1 described here according to a thirty-fourth exemplary embodiment is shown. By mounting a plurality of devices 1 with the side of their carrier 600 facing away from the optoelectronic semiconductor component 10 on an intermediate carrier 610, a plurality of devices 1 can be easily handled and easily transported. After mounting the devices 1 on the printed circuit board 9, the carrier 600 can be separated from the devices 1, for example by means of a mechanical pulling force on the intermediate carrier 610. For example, the intermediate carrier 610 is formed from a tear-resistant polymer film.

[0161] Fig.35 A plurality of schematic cross-sectional views of the device 1 described here according to the 35th embodiment are shown. The 35th embodiment corresponds essentially to the eleventh embodiment. In the embodiment of the device 1 shown here, the connector 50 is embodied as a copper pillar structure. The protective layer 32 can advantageously be omitted. The copper pillar structure has in particular a high thermal conductivity and a high mechanical stability. In addition, the precise distance between the optoelectronic semiconductor component 10 and the subsequent mounting surface can be adjusted. In order to further stabilize the device 1, a second insulating layer 31 is applied to the insulating layer 30, which is embodied as an electrical insulator and fills the gaps between the connectors 50.

[0162] Fig.36 A schematic cross-sectional view of a device 1 described here according to a 36th embodiment is shown. The 36th embodiment corresponds essentially to the eleventh embodiment. The connectors 50 are implemented as through-holes through the second insulating layer 31. These through-holes are formed, for example, of Cu. The protective layer 32 can advantageously be omitted. The second insulating layer can be used to planarize the device 1.

[0163] Fig.37 Schematic cross-sectional views of a device 1 described here according to a 37th embodiment are shown. The 37th embodiment corresponds essentially to the 36th embodiment. The connecting bodies 50 shown here are embodied as through-holes by means of a conductive filling material 502. These through-holes extend through the second insulating layer 31 as far as the connecting structure 40. For example, the conductive filling material 502 is formed by a conductive paste, in particular a paste containing silver.

[0164] Fig.38 A schematic cross-sectional view of a plurality of devices 1 described here according to a 38th embodiment is shown. The 38th embodiment corresponds essentially to the second embodiment. The 38th embodiment shown here comprises a carrier 600 which has a cutout 22 on the side facing the insulating layer 30. The cutout 22 is filled with the material of the insulating layer 30 and is respectively arranged around each device 1 at the edge. The cutout 22 reduces or avoids optical crosstalk of adjacent devices 1.

[0165] Fig.39A plurality of schematic cross-sectional views of the device 1 described here according to the 39th embodiment are shown. The 39th embodiment corresponds substantially to the second embodiment. The coupling-out element 20 of the device 1 comprises a plurality of radiation-permeable regions 210 and a plurality of absorption regions 220. The radiation-permeable regions 210 are respectively aligned with the lateral positioning of the optoelectronic semiconductor device 10. Therefore, the radiation emitted by the optoelectronic semiconductor device 10 can be emitted without hindrance. At the same time, there is an absorption region 220 between every two devices 1. The absorption region 220 prevents or reduces optical crosstalk from adjacent devices 1, thereby advantageously increasing the contrast. For example, such a coupling-out element 20 is formed of plastic.

[0166] Fig.40 A plurality of schematic cross-sectional views of the device 1 described here according to the 40th embodiment are shown. The 40th embodiment corresponds essentially to the 39th embodiment. In addition, a second radiation-permeable region 211 is introduced into the radiation-permeable region 210 of the coupling-out element 20. The second radiation-permeable region 211 differs from the first radiation-permeable region 210 in their refractive index. The shape of the second radiation-permeable region 211 is, for example, the shape of a convex lens. Therefore, the second radiation-permeable region 211 can contribute to the beam shaping of the electromagnetic radiation emitted by the optoelectronic semiconductor component 10, in particular to the reduction of the divergence.

[0167] Fig.41 A schematic cross-sectional view of a plurality of devices 1 described here according to a forty-first embodiment is shown. The forty-first embodiment corresponds substantially to the fifth embodiment. The optoelectronic semiconductor component 10 is introduced into a carrier 600 and advantageously has a flat side surface on the side facing away from the carrier 600. This advantageously facilitates the mounting of the device 1 on a subsequent mounting carrier. The insulating layer 30 extends only in the lateral direction on the carrier 600 and not on the side surface 10A of the semiconductor component 10. The insulating layer 30 is applied to the carrier 600 by means of molding.

[0168] Fig.42 A schematic cross-sectional view of a device 1 described here according to a plurality of embodiments is shown. The 42nd embodiment corresponds substantially to the eleventh embodiment. In the device 1 shown in the 42nd embodiment, a further plane of a connecting structure 40 is arranged on the protective layer 32, which plane enables the connecting body 50 to be freely positioned in the lateral direction. The second plane of the connecting structure 40 is likewise applied by means of a planar interconnection method and is spaced apart from the first plane by an insulating material 35. The insulating material is embodied as electrically insulating and is formed, for example, of a polymer.

[0169] Fig.43Schematic cross-sectional views of a plurality of devices 1 described here according to a forty-third embodiment are shown. The forty-third embodiment corresponds essentially to the thirty-third embodiment. The forty-third embodiment shows that the device 1 is mounted on a printed circuit board 9 having a plurality of connection surfaces 90, wherein the carrier 600 has not yet been separated. A connection layer 601 and a separation layer 604 are arranged between the carrier 600 and the insulation layer, the separation layer 604 allowing a simple separation of the carrier 600. The carrier 600 has a structured portion embossed into the connection layer 601.

[0170] Fig.44 A schematic cross-sectional view of a device 1 described here according to a plurality of embodiments is shown. The 44th embodiment corresponds substantially to the 43rd embodiment. In the 44th embodiment shown here, a separation layer 604 is arranged between the carrier 600 and the insulating layer 30. The connecting layer 601 can advantageously be omitted. The separation layer 604 is used to remove the carrier 600 from the device 1 by means of a thermal or light-induced separation method. Possible combinations of separation layer materials and suitable separation processes are listed below: SiNx+laser separation, polyimide+laser separation, thermal separation film+thermal separation, anti-adhesion layer+mechanical separation (GHT).

[0171] The invention is not limited by the description based on the exemplary embodiments. On the contrary, the invention includes every new feature and every combination of features, in particular including every combination of features in the claims, even if this feature or this combination itself is not explicitly stated in the claims or exemplary embodiments.

[0172] This patent application claims the priority of German patent application 102019114315.2, the disclosure content of which is incorporated herein by reference.

[0173] Reference numerals list

[0174] 1 Device

[0175] 10 Optoelectronic semiconductor devices

[0176] 10A Side

[0177] 100 Semiconductor body

[0178] 101 Contact Structure

[0179] 1000 Semiconductor layer sequence

[0180] 1001 Substrate

[0181] 2000 Active Area

[0182] 100A Radiant output side

[0183] 100B Back

[0184] 20 Output coupling element

[0185] 21 recess

[0186] 22 Groove

[0187] 210 Radiolucent area

[0188] 211 Second radiation transparent area

[0189] 220 Absorption area

[0190] 30 Insulation layer

[0191] 31 Second insulation layer

[0192] 32 protective layer

[0193] 33 Molding

[0194] 34 Reflection layer

[0195] 35 Insulation material

[0196] 40 Connection structure

[0197] 400 Adhesion Layer

[0198] 401 Growth Layer

[0199] 402 Connection Layer

[0200] 50 Connector

[0201] 51 First connection line

[0202] 52 Second connection line

[0203] 500 cores

[0204] 501 Housing

[0205] 502 Filling material

[0206] 600 Carrier

[0207] 601 Connection Layer

[0208] 602 coupling output layer

[0209] 603 Dispersed Center

[0210] 604 Separation Layer

[0211] 610 Intermediate carrier

[0212] 70 Reflective coating

[0213] 71 Cavity

[0214] 8 Integrated Circuits

[0215] 80 Integrated Circuits

[0216] 9. Printed Circuit Board

[0217] 91 Connection surface

[0218] T dividing line

[0219] Z Section Line

[0220] D Insulation layer thickness.

Claims

1. An arrangement (1) of optoelectronic semiconductor components, comprising a plurality of optoelectronic semiconductor components (10), an outcoupling element (20), an electrically insulating insulating layer (30) and an electrical connection structure (40), wherein - the semiconductor devices (10) are arranged in a common plane and each semiconductor device (10) is laterally delimited by a side surface (10A), - The semiconductor devices (10) respectively have a semiconductor body (100) having an active region (2000) arranged to emit electromagnetic radiation, a radiation exit side (100A) for coupling out the electromagnetic radiation, a back side (100B) opposite to said radiation exit side (100A), and a contact structure (101) arranged on the back side (100B), - the insulating layer (30) is arranged between the side surfaces (10A) of adjacent semiconductor devices (10) and is implemented to absorb or reflect radiation generated in the active region (2000), the outcoupling element (20) is arranged on the radiation exit side (100A) of the semiconductor component (10), The electrical connection structure (40) is arranged on the side of the semiconductor component (10) facing the back side (100B) and is electrically conductively connected to the contact structure (101), and - the connection structure (40) comprises an adhesion layer (400), a growth layer (401) and a connection layer (402), The adhesion layer (400) is arranged on the side facing the contact structure (101) and is formed from one of the following materials: Ti, Cr, Ni, Pd, - the growth layer (401) is arranged between the adhesion layer (400) and the connection layer (402), and The outcoupling element (20) is formed in its lateral extension by a series of radiation-permeable regions (210) and absorption regions (220), wherein one radiation-permeable region (210) is associated with each optoelectronic semiconductor component (10).

2. The device (1) according to claim 1, in, The semiconductor body (100) comprises a semiconductor layer sequence (1000) and a radiation-permeable substrate (1001), wherein the active region (2000) is arranged in the semiconductor layer sequence (1000) and the substrate (1001) is arranged on a side of the semiconductor layer sequence (1000) opposite to the contact structure (101).

3. The device (1) according to claim 1, in, The outcoupling element (20) is formed from a glass substrate, a polymer or a radiation-transmissive ceramic.

4. The device (1) according to any one of claims 1 to 2, in, The outcoupling element (20) has, on its side facing away from the semiconductor body (100), a structure for coupling out electromagnetic radiation generated in the active region (2000).

5. The device (1) according to any one of claims 1 to 3, in, A second radiation-permeable region (211) having a different refractive index than the radiation-permeable region (210) is introduced into the radiation-permeable region (210).

6. The device (1) according to any one of claims 1 to 3, in, The insulating layer (30) completely covers the coupling-out element (20) between the side surfaces (10A) of the semiconductor device (10).

7. The device (1) according to any one of claims 1 to 3, in, The insulating layer (30) completely covers the side surface (10A) of the semiconductor device (10).

8. The device (1) according to any one of claims 1 to 3, in, A side surface (10A) of the semiconductor device (10) is provided with a reflective coating (70), or a cavity (71) having a reflective interface is formed between the insulating layer (30) and the side surface (10A).

9. The device (1) according to any one of claims 1 to 3, in, The thickness of the insulating layer (30) is equal to the thickness of the semiconductor device (10).

10. The device (1) according to any one of claims 1 to 3, in, The semiconductor component (10) is arranged at least partially in a recess (21) of the outcoupling element (20).

11. The device (1) according to any one of claims 1 to 3, in, The electrical connection structure (40) is applied as a conductive layer on the insulating layer (30).

12. The device (1) according to any one of claims 1 to 3, in, The electrical connection structure (40) is electrically conductively connected to the connection body (50).

13. The device (1) according to any one of claims 1 to 3, in, A second insulation layer (31) is arranged on the side of the device (1) facing away from the outcoupling element (20), which serves to mechanically stabilize the device (1).

14. The device (1) according to any one of claims 1 to 3, in, The outcoupling element (20) has a groove (22) which is circumferential at the edge.

15. The device (1) according to claim 12, in, The connector (50) forms a ball grid array or a pad grid array.

16. A method for producing a device (1) according to any one of the preceding claims, comprising the following steps: A) providing a carrier (600) and providing a radiation-transmissive connecting layer (601) on a first side of the carrier (600), B) providing a plurality of optoelectronic semiconductor devices (10), wherein Each semiconductor device (10) is laterally bounded by a side surface (10A), and each semiconductor device (10) has a semiconductor body (100) having an active region (2000) arranged to emit electromagnetic radiation, a radiation exit side (100A) for coupling out the electromagnetic radiation, a back side (100B) opposite to the radiation exit side (100A), and - having a contact structure (101) arranged on the back side (100B), and - applying the semiconductor components (10) with the radiation exit side (100A) to the connection layer (601), C) arranging an electrically insulating insulation layer (30) on the first side of the carrier (600), D) exposing the contact structure (101), and E) arranging a connection structure (40) on the side of the semiconductor device (10) facing the back side (100B), wherein the connection structure (40) comprises an adhesion layer (400), a growth layer (401) and a connection layer (402), The adhesion layer (400) is arranged on the side facing the contact structure (101) and is formed from one of the following materials: Ti, Cr, Ni, Pd, - the growth layer (401) is arranged between the adhesion layer (400) and the connection layer (402), and The outcoupling element (20) is formed in its lateral extension by a series of radiation-permeable regions (210) and absorption regions (220), wherein one radiation-permeable region (210) is associated with each optoelectronic semiconductor component (10).

17. Method for manufacturing a device (1) according to claim 16, in, The carrier (600) is formed from a radiation-transmissive material and, together with the connecting layer (601), forms an outcoupling element (20).

18. Method for manufacturing a device (1) according to claim 16, in, The carrier (600) is separated and the connecting layer (601) forms an outcoupling element (20).

19. Method for manufacturing a device (1) according to claim 18, in, The carrier (600) has, on its side facing the connecting layer (601), a structuring which is embossed into the connecting layer (601).

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