Flexible electronic devices

Abstract

The present invention provides a flexible electronic device, comprising a supporting substrate, a first flexible substrate disposed on the supporting substrate, a semiconductor layer disposed on the first flexible substrate, a first insulating layer disposed between the first flexible substrate and the semiconductor layer, and having a first opening, and a protective layer disposed on the semiconductor layer. A portion of the protective layer is disposed in the first opening.

Description

[0001] This application is a divisional application of the invention patent application with the application date of August 22, 2019, application number 201910780008.7, and invention name “Flexible Electronic Device”. Technical Field

[0002] The present invention relates to a flexible electronic device, and in particular to a flexible display device. Background Art

[0003] In recent years, flexible or deformable electronic devices have become one of the important technologies of the new generation. Therefore, the demand for flexible display devices that can be integrated into electronic devices is gradually increasing. Flexible electronic devices refer to electronic devices that can be bent (curved), folded (folded), stretched (stretched), flexed (flexed), rolled (rolled) or other similar deformable devices. In order to achieve the flexible effect, the glass substrate of the traditional electronic device is replaced with a flexible substrate. However, general flexible substrates cannot effectively block moisture or gas (such as oxygen), resulting in the circuit formed on the flexible substrate being easily oxidized and damaged, especially after the device has been bent a certain number of times. Therefore, there is still a need to reduce damage to components in flexible electronic devices and improve the stability and reliability of flexible electronic devices. Summary of the invention

[0004] An embodiment of the present invention provides a flexible electronic device, including a support substrate, a first flexible substrate disposed on the support substrate, a semiconductor layer disposed on the first flexible substrate, a first insulating layer disposed between the first flexible substrate and the semiconductor layer and having a first opening, and a protective layer disposed on the semiconductor layer. A portion of the protective layer is disposed in the first opening. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 FIG. 1 is a schematic side view of a flexible electronic device in a bent state according to a first embodiment of the present invention.

[0006] Figure 2 for Figure 1 The diagram shows a cross-sectional view of a portion of a flexible display device.

[0007] Figure 3 It is a cross-sectional schematic diagram of a flexible substrate according to a first variation of the first embodiment of the present invention.

[0008] Figure 4 It is a cross-sectional schematic diagram of a flexible display device according to a second variation of the first embodiment of the present invention.

[0009] Figure 5It is a cross-sectional schematic diagram of a flexible display device according to a third variation embodiment of the first embodiment of the present invention.

[0010] Figure 6 It is a cross-sectional schematic diagram of a flexible display device according to a fourth variation embodiment of the first embodiment of the present invention.

[0011] Figure 7 It is a schematic cross-sectional view of a flexible display device according to a fifth variation of the first embodiment of the present invention.

[0012] Figure 8 FIG. 4 is a cross-sectional schematic diagram of a flexible display device according to a second embodiment of the present invention.

[0013] Fig. 9 It is a schematic cross-sectional view of a flexible display device according to a first variation of the second embodiment of the present invention.

[0014] Fig.10 It is a cross-sectional schematic diagram of a flexible display device according to a second variation of the second embodiment of the present invention.

[0015] Fig.11 It is a schematic top view of a flexible display device according to a third variation of the second embodiment of the present invention.

[0016] Fig.12 for Fig.11 The flexible display device is shown as a cross-sectional schematic diagram along the section line AA′ and the section line BB′.

[0017] Explanation of reference numerals: 100, 100B, 100C, 100D, 100E, 200, 200A, 200B, 200C-flexible display device; 102, 102A, 102C, 202, 202B, 202C-flexible base substrate; 102a, 202a-first surface; 102b-second surface; 102S-edge surface; 104, 204C-display structure; 1042-circuit layer; 1046-display layer; 1048-protective layer; 106-control element; 108, 108C, 208, 208C-support substrate; 110, 110A, 110B, 110D, 110E, 210, 210C-first flexible substrate; 110R, 110 2R, 102R, RD, CLR-grooves; 110S1, 110S2-wavy surface; 112, 112A, 112B, 112C, 212-first oxide layer; 114, 114A, 114D, 114E, 214, 214C-second oxide layer; 116, 116D, 116E, 216-first insulating layer; 118, 118D, 118E, 218-second insulating layer; 120, 120B, 120C, 220, 220C-second flexible substrate; 122-adhesive layer; 124-waterproof layer; 126, 130, WR1, WR2, WR3-conductor; 128-conductive material; 220S-bottom surface; 232-first conductor; 234-second Conductor; 236-third conductor; 238-fourth conductor; AL-active layer; AR-active region; BP-bump; BR-bending region; CD-cutting direction; CH1, CH2, CH3, CH4-contact hole; CL, CLA, CLB, CLC-conductive layer; CP-connecting part; CT, CT1, CT2, CTC1, CTC2-contact piece; D1-direction; D2-vertical direction; D3-horizontal direction; DR-display region; E-edge part; E1, E2-electrode; ED-flexible electronic device; EL-electronic structure; FR-bendable region; FX1-first bending axis; FX2-second bending axis; GI-gate insulating layer; IL1, IL2-insulating layer; L1, L2 -length; LD-light-emitting unit; LL-light-emitting layer; M1-first metal layer; M2-second metal layer; MP-main part; OP1, OP2, OP3, 1140, OP4, OP5, OP6-opening; PDL-pixel definition layer; PR-peripheral region; R1-first region; R2-second region; R3-third region; S1, S2-spacing; SD-stretching direction; SP-signal transmission part; T-transistor; T1, T2, T3, T4-thickness; TH1, THc-first thickness; TH2-second thickness; TH3-third thickness; TH4-fourth thickness; TH5-fifth thickness; TH6-sixth thickness; UP-unit part; US-display unit structure; W1-first width;W2-second width; θ-acute angle. ; DETAILED DESCRIPTION

[0018] The present invention can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that in order to facilitate the reader's understanding and the simplicity of the drawings, the drawings of the present invention only depict a portion of the display device, and certain elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the drawings are only for illustration and are not intended to limit the scope of the present invention.

[0019] Certain terms are used throughout the specification and claims to refer to specific components. It should be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. It is not intended to distinguish between components that have the same function but different names. In the following specification and claims, the words "including" and "comprising" are open-ended words and should therefore be interpreted as "including but not limited to...".

[0020] It should be understood that when an element or film layer is referred to as being "on" or "connected to" another element or film layer, it may be directly on or directly connected to the other element or layer, or there may be an intervening element or film layer between the two. Conversely, when an element is referred to as being "directly" "on" or "directly connected to" another element or film layer, there may be no intervening element or film layer between the two.

[0021] It should be noted that the embodiments listed below can replace, reorganize, and mix the technical features in several different embodiments to complete other embodiments without departing from the spirit of the present invention.

[0022] Figure 1 FIG. 1 is a schematic side view of a flexible electronic device in a bent state according to a first embodiment of the present invention. Figure 1 As shown, the electronic device ED of the first embodiment of the present invention is a flexible electronic device. For example, the flexible electronic device ED may include a flexible display device 100 capable of displaying images. The term "flexible" means that at least a portion of the electronic device ED can be deformed, curved, bent, folded, stretched, flexed and / or rolled. For example, a portion of the electronic device ED can be deformed, curved, bent, bent, stretched, flexed and / or rolled along a specific direction, but is not limited thereto. In order to explain the content of the present invention, the flexible display device 100 of this embodiment may be a foldable display device.

[0023] The flexible electronic device of the present invention may include a flexible base substrate 102 and an electronic structure EL disposed on the flexible base substrate 102. In some embodiments, the flexible electronic device may include an active area AR and a peripheral area PR adjacent to the active area AR. The electronic structure EL may be disposed in the active area AR. Part of the peripheral circuit and / or control element may be disposed in the peripheral area PR, and the peripheral area PR of the flexible display device 100 does not display an image. According to some embodiments, the electronic structure EL may be a display structure 104, so the active area AR is a display area DR that displays an image. Therefore, the flexible electronic device is a flexible display device. According to some embodiments, the electronic structure EL may not have a display function. For example, the electronic structure EL may include at least a partial structure of an antenna, such as a liquid crystal antenna or a part thereof.

[0024] For the convenience of explanation, some examples take the electronic structure EL as the display structure 104 as an example, and in the following content of the present invention, the flexible electronic device ED is bendable. Therefore, the flexible electronic device ED is a bendable flexible display device 100, such as Figure 1 The flexible display device 100 can be bent along at least one bending axis, for example Figure 1 The first bending axis FX1 parallel to the direction D1 is shown. Therefore, the flexible display device 100 can be divided into and defined into a first region R1, a second region R2 and a bendable region FR, wherein the bendable region FR is located between the first region R1 and the second region R2, and connects the first region R1 and the second region R2. In this embodiment, the first region R1, the second region R2 and the bendable region FR may be included in the active region AR. As described above, when the flexible display device 100 has a display function as an example, the active region AR is the display region DR, the first region R1 is the first display region, and the second region R2 is the second display region. In some embodiments, the bendable region FR of the flexible display device 100 may include an element having a display function, so the bendable region FR is a bendable display region. In other embodiments, the bendable region FR of the flexible display device 100 may not include an element having a display function. The flexible electronic device ED in the bendable display region FR can be bent, curved, bent, stretched, flexed and / or rolled along the first bending axis FX1. The first region R1, the bendable region FR and the second region R2 can be connected together in sequence, for example, but not limited thereto.

[0025] According to the first embodiment, the flexible display device 100 may be a bendable display device, and the flexible base substrate 102 may be a bendable substrate. In other embodiments, the flexible electronic device ED may be a stretchable display device, a bendable display device (not shown), or a rollable display device (not shown). For example, the peripheral region PR may be adjacent to the active region AR and connected to the second region R2, but is not limited thereto. In other embodiments, the peripheral region PR may be connected to one side of any one of the first region R1, the second region R2, and the bendable region FR.

[0026] The flexible display device 100 may also include a control element 106 (e.g., an integrated circuit (IC)), which is disposed on a surface (e.g., the first surface 102a) of the flexible base substrate 102 in the peripheral region PR. The control element 106 may be electrically connected to the display structure 104 via a plurality of wires (not shown) to control the relevant display functions. In the peripheral region PR, the flexible electronic device ED may be bent along the second bending axis FX2 to form a bending region BR and a third region R3, and the bending region BR may be connected between the second region R2 and the third region R3. By utilizing the bendable nature of the flexible base substrate 102, the portion of the flexible base substrate 102 having the control element 106 may be bent backward along the second bending axis FX2 to the rear surface (the second surface 102b) of the flexible base substrate 102. Therefore, the control element 106 may not occupy the front side of the flexible display device 100, and the area of ​​the flexible display device 100 may be reduced as a result.

[0027] Please refer to Figure 2 , Figure 2 for Figure 1 The cross-sectional view of a part of the flexible display device shown in FIG. Figure 2The active area AR (display area DR) and the peripheral area PR are shown. In the present embodiment, the flexible base substrate 102 includes a support substrate 108, a first flexible substrate 110, a first oxide layer 112 and a second oxide layer 114, wherein the first flexible substrate 110 is disposed on the support substrate 108, the first oxide layer 112 is disposed between the first flexible substrate 110 and the support substrate 108, and the second oxide layer 114 is disposed on a surface of the first flexible substrate 110 opposite to the first oxide layer 112. In some embodiments, the first oxide layer 112 can be directly formed on a surface of the first flexible substrate 110 facing the support substrate 108. In some embodiments, the second oxide layer 114 can be directly formed on another surface of the first flexible substrate 110 facing the display structure 104. By means of the stacked structure of the first oxide layer 112, the first flexible substrate 110 and the second oxide layer 114, water vapor or gas (such as oxygen) that can damage the display structure 104 or affect the electrical characteristics of the display structure 104 can be effectively prevented from penetrating the flexible base substrate 102. The first flexible substrate 110 may include, for example, polyimide (PI), polyethylene terephthalate (PET), polycarbonate (PC), polyethersulfone (PES), polybutylene terephthalate (PBT), polyethylene naphthalate (PEN), polyarylate (PAR) or other suitable flexible substrate materials, but is not limited thereto.

[0028] Please refer to Table 1, which lists the results of the reliability test of the flexible display device of different samples. The structure of the flexible display device tested in the reliability test includes a first flexible substrate 110, a first layer, a second layer, a display structure 104 and a supporting substrate 108, wherein the first layer and the second layer are formed on two opposite surfaces of the first flexible substrate 110, the second layer is disposed between the display structure 104 and the first flexible substrate 110, and the first layer is disposed between the first flexible substrate 110 and the supporting substrate 108. In samples 1, 3, 5, and 7, the first layer is the first oxide layer 112 of the present invention, and the second layer is the second oxide layer 114 of the present invention. In samples 2, 4, 6, and 8, the first layer is formed using a material different from the first oxide layer 112 of the present invention, and / or the second layer is formed using a material different from the second oxide layer 114 of the present invention. The reliability test is to bend and unfold the flexible display device along the first bending axis for a period of time in an environment of 40°C / 90% relative humidity (RH) or 85°C / 85% relative humidity. In this reliability test, the thickness of the first layer and the second layer can be, for example, 0.5 microns, but is not limited to this. According to Sample 2, Sample 4 and Sample 6 in Table 1, when the first layer is formed by a nitride layer and / or the second layer is formed by a nitride layer, after the reliability test, it can be observed that the nitride layer is peeled off from the first flexible substrate 110, so that the flexible display device cannot be used normally (NG) after the reliability test. In addition, in Sample 8, when the first layer and / or the second layer includes nitrogen oxides and the oxygen content is lower than the nitrogen content, the first layer and / or the second layer will also be peeled off from the first flexible substrate 110 after the reliability test, so that the flexible display device cannot be used normally (NG) after the reliability test. On the contrary, the flexible display devices of Sample 1, Sample 3, Sample 5 and Sample 7 can pass the reliability test. According to some embodiments, it can be known from the above test results that the first layer can be an oxide layer and the second layer can be an oxide layer. According to some embodiments, the first oxide layer 112 and the second oxide layer 114 can include, for example, silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), aluminum oxide (aluminum oxide, AlO x ), aluminum oxynitride (AlO x N y ) or other suitable oxide materials. When any one of the first oxide layer 112 and the second oxide layer 114 comprises silicon oxynitride or aluminum oxynitride, the oxygen content may be greater than the nitrogen content.

[0029] Table 1

[0030]

[0031]

[0032] Please refer to Figure 2 In this embodiment, the flexible base substrate 102 may selectively include a first insulating layer 116 and a second insulating layer 118, wherein the first insulating layer 116 is disposed on the second oxide layer 114, the second insulating layer 118 is disposed between the second oxide layer 114 and the first insulating layer 116, and the display structure 104 is directly formed on the first insulating layer 116. For example, the first insulating layer 116 and the second insulating layer 118 may include silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum oxynitride, or other suitable insulating materials. In some embodiments, in order to improve the adhesion effect between the display structure 104 and the first insulating layer 116, the first insulating layer 116 may be an oxide layer, for example, including silicon oxide, silicon oxynitride, aluminum oxide, aluminum oxynitride, or other suitable oxide materials. In some embodiments, since the bond energy of Si-N bond measured by X-ray photoelectron spectroscopy (XPS) is between 397eV and 399eV, the ability of silicon nitride to block water vapor or gas (such as oxygen) may be better than that of silicon oxide. In order to improve the effect of the flexible base substrate 102 in blocking water vapor or gas (such as oxygen), the second insulating layer 118 may include silicon nitride. In other embodiments, the flexible base substrate 102 may not include the first insulating layer 116 and the second insulating layer 118, and the display structure 104 may be directly formed on the second oxide layer 114.

[0033] Please refer to Figure 2 In some embodiments, the flexible base substrate 102 may selectively include a second flexible substrate 120 disposed between the first oxide layer 112 and the support substrate 108. The second flexible substrate 120 may be formed on the first oxide layer 112 by coating, and the support substrate 108 may be adhered to the second flexible substrate 120 via an adhesive layer 122. The second flexible substrate 120 may include, for example, polyimide, polyethylene terephthalate, polycarbonate, polyethersulfone, polybutylene terephthalate, polyethylene naphthalate, polyarylate or other suitable flexible substrate materials. It should be noted that since the adhesion effect between the second flexible substrate 120 and the adhesive layer 122 is better than the adhesion effect between the first oxide layer 112 and the adhesive layer 122, the adhesion effect of the support substrate 108 to the first oxide layer 112 can be improved by the second flexible substrate 120.

[0034] Please refer to Table 2, which lists the results of the reliability test of the flexible display device when the first insulating layer 116, the second insulating layer 118, the second oxide layer 114, the first flexible substrate 110, the first oxide layer 112 and the second flexible substrate 120 have different thicknesses. In this reliability test, the first oxide layer 112 and the second oxide layer 114 both include silicon oxide. According to the content of Table 2, when the first thickness TH1 of the first oxide layer 112 is greater than the second thickness TH2 of the second oxide layer 114, the flexible display device 100 can pass the reliability test. More specifically, the ratio of the second thickness TH2 to the first thickness TH1 can be greater than or equal to 0.2 and less than 1. In addition, the third thickness TH3 of the first flexible substrate 110 can be greater than the first thickness TH1 and the second thickness TH2. Specifically, the ratio of the sum of the first thickness TH1 and the second thickness TH2 to the third thickness TH3 of the first flexible substrate 110 is between 0.1 and 0.5. In addition, a ratio of the third thickness TH3 to the first thickness TH1 may be between 3 and 15. For example, the first thickness TH1 may be between 0.5 micrometers and 2 micrometers, and the second thickness TH2 may be between 0.2 micrometers and 1 micrometer.

[0035] Table 2

[0036]

[0037]

[0038] According to the contents of Table 2, in some embodiments, when the first insulating layer 116 includes silicon oxide, the second insulating layer 118 includes silicon nitride, and the first flexible substrate 110 and the second flexible substrate 120 include polyimide, a rule for designing the thickness of the above-mentioned film layers can be obtained. That is, the ratio of the sum of the second thickness TH2, the fourth thickness TH4 of the second insulating layer 118, and the fifth thickness TH5 of the first insulating layer 116 to the first thickness TH1 is between 0.5 and 2. In some embodiments, the ratio of the third thickness TH3 of the first flexible substrate 110 to the sixth thickness TH6 of the second flexible substrate 120 is between 0.4 and 1.2. In some embodiments, the ratio of the first thickness TH1 of the first oxide layer 112 to the sum of the third thickness TH3, the first thickness TH1, and the sixth thickness TH6 is between 0.02 and 0.15. The interface between the above-mentioned film layers can be confirmed, for example, by a method of immersing in hydrofluoric acid.

[0039] Please refer to Figure 2In some embodiments, the display structure 104 is disposed on a flexible base substrate 102 and may include a circuit layer 1042, a display layer 1046 and a protective layer 1048. The display structure 104 may be disposed in a display region DR. The display layer 1046 may include an organic light emitting diode (OLED), an inorganic light emitting diode (INORGANIC LIGHT emitting diode), a quantum dot light emitting diode (QLED) or a liquid crystal layer. The inorganic light emitting diode may be a sub-millimeter light emitting diode (mini LED) or a micro light emitting diode (micro LED). The display layer 1046 may be electrically connected to the circuit layer 1042 and driven by the circuit layer 1042 to display an image. In some embodiments, the display layer 1046 may include a plurality of light emitting units LD, such as a plurality of organic light emitting diode units, a plurality of quantum dot light emitting diode units or a plurality of inorganic light emitting diode units. To simplify the description, Figure 2 Only one light emitting unit LD is shown, for example one organic light emitting diode unit.

[0040] The circuit layer 1042 and the light emitting unit LD are sequentially formed on the first surface 102a of the flexible base substrate 102, and the protective layer 1048 is formed and covers the circuit layer 1042 and the light emitting unit LD to protect the circuit layer 1042 and the light emitting unit LD. For example, the circuit layer 1042 may include transistors T, data lines, scan lines, power lines, and other elements required to drive and control the light emitting unit LD, and each light emitting unit LD may be electrically connected to its corresponding transistor T. In order to simplify the description and facilitate the explanation, Figure 2 A transistor T and a light emitting unit LD are shown as an example, but the present invention is not limited thereto. Figure 2As shown, the transistor T may be, for example, a top gate type thin film transistor. In this case, an active layer AL including a semiconductor material may be first formed on the flexible base substrate 102, then a gate insulating layer GI is formed to cover the active layer AL, and then a gate of the transistor T is formed on the gate insulating layer GI, wherein the gate is formed by the first metal layer M1. Then, an insulating layer IL1 is formed on the gate and the gate insulating layer GI, two contact holes CH1 are formed in the gate insulating layer GI and the insulating layer IL1 to expose the active layer AL on both sides of the gate, and a source and a drain of the transistor T are formed on the insulating layer IL1, wherein the source and the drain are formed by the second metal layer M2, and the source and the drain are respectively filled in the contact hole CH1 to contact the active layer AL, and then another insulating layer IL2 may be formed to cover the transistor T, thereby forming a circuit layer 1042. In some embodiments, the first metal layer M1 and the second metal layer M2 may be formed by a single layer structure or a multi-layer structure, such as a titanium / aluminum / titanium film layer. It should be noted that, since the active layer AL is directly formed on the flexible base substrate 102, the stack of the first oxide layer 112, the first flexible substrate 110 and the second oxide layer 114 or the combination of the first insulating layer 116 and the second insulating layer 118 can prevent the active layer AL from being oxidized or affected by moisture or gas (such as oxygen), thereby improving the stability of the transistor T. In some embodiments, the transistor T may be a bottom gate thin film transistor. In this case, the gate of the transistor T can be directly formed on the flexible base substrate 102, so the design of the flexible base substrate 102 can prevent the gate and / or the active layer from being oxidized or damaged by moisture or gas (such as oxygen).

[0041] Please refer to Figure 2In some embodiments, the light-emitting unit LD may be an organic light-emitting diode unit. For example, another contact hole CH2 may be formed in the insulating layer IL2, and then, an electrode E1 may be formed on the insulating layer IL2. The electrode E1 extends into the contact hole CH2 and is electrically connected to the source or drain of the transistor T. Then, a pixel definition layer PDL is formed on the insulating layer IL2, and the pixel definition layer PDL has an opening OP1 exposing the electrode E1. A light-emitting layer LL, such as an organic light-emitting layer, may be formed on the exposed electrode E1, and then, another electrode E2 may be formed on the light-emitting layer LL to form a light-emitting unit (organic light-emitting diode unit). Thereafter, a protective layer 1048 is formed to cover the light-emitting unit LD, thereby forming a display structure 104. In some embodiments, when the light-emitting unit LD is an inorganic light-emitting diode, the light-emitting unit LD may be directly disposed in the opening OP1 of the pixel definition layer PDL, and the filling layer may fill the opening OP1. In this case, the light-emitting unit LD may be a chip having an inorganic light-emitting material for emitting light. For example, the chip size of a sub-millimeter LED is between 100 microns and 300 microns, or the chip size of a micro LED is between 1 micron and 100 microns.

[0042] The manufacturing method of the flexible display device 100 is described in more detail below. First, a roll of the first flexible substrate 110 is provided, and then, by setting the first flexible substrate 110 in a chamber and introducing a gas for forming silicon oxide in the chamber, the first oxide layer 112 and the second oxide layer 114 can be formed on two opposite surfaces of the first flexible substrate 110, respectively. In this embodiment, by controlling the gas flow rate or the amount of gas, the first thickness TH1 of the formed first oxide layer 112 can be controlled to be greater than the second thickness TH2 of the formed second oxide layer 114. Thereafter, the roll of the first flexible substrate 110 can be cut into a plurality of mother substrates of the first flexible substrate 110, and the mother substrates of the first flexible substrate 110 are set on a support of another chamber, and the surface of the first flexible substrate 110 having the second oxide layer 114 is facing upward. Then, the second insulating layer 118 and the first insulating layer 116 are sequentially deposited on the second oxide layer 114. Then, a plurality of display structures 104 are formed on the first insulating layer 116. Then, the formed structure is flipped over so that the first flexible substrate 112 faces upward, and a second flexible substrate 120 is formed on the first oxide layer 112, and the support substrate 108 is adhered to the second flexible substrate 120 via the adhesive layer 122. After completing the above steps, a cutting process is performed to obtain a plurality of flexible display devices 100. In some embodiments, the second flexible substrate 120, the first oxide layer 112, the first flexible substrate 110, the second oxide layer 114, the second insulating layer 118, the first insulating layer 116 and the display structure 104 can be sequentially formed on a support substrate, such as a glass substrate, and then, the surface of the second flexible substrate 120 opposite to the first oxide layer 112 can be separated from the support substrate and adhered to the support substrate 108, thereby forming the flexible display device 100.

[0043] It should be noted that when the first insulating layer 116, the second insulating layer 118, the second oxide layer 114, the first flexible substrate 110, the first oxide layer 112 and the second flexible substrate 120 are cut along the vertical direction D2 perpendicular to the first surface 102a of the flexible base substrate 102, these film layers may have greater stress, so that the edges of the first insulating layer 116, the second insulating layer 118, the second oxide layer 114 and the first oxide layer 112 are prone to fracture, and the fracture may extend from the edge of the flexible base substrate 102 to the center. After the flexible display device 100 is bent a certain number of times, the crack may extend to the display structure 104, or moisture or gas may affect the display structure 104 through the crack, thereby damaging the flexible display device 100. Please refer to Figure 2In some embodiments, the flexible base substrate 102 may be cut along a cutting direction CD that is not perpendicular to the first surface 102a of the flexible base substrate 102. Therefore, stress may be dispersed and / or reduced, and the possibility of fracture may be reduced. For details, please refer to Figure 2 , the cutting direction CD may be inclined so that in the edge portion E, an acute angle θ may be formed between the edge surface 102S and the rear surface (second surface 102b) of the flexible base substrate 102. In some embodiments, the edge portion E of the flexible base substrate 102 may be disposed in the peripheral region PR, such as Figure 2 In some embodiments, although not Figure 2 As shown in FIG. 1 , the edge portion of the flexible base substrate 102 may be disposed in a region adjacent to the display region DR or included in the display region DR, wherein the edge portion has an acute angle between the edge surface 102S and the rear surface. By means of the inclined cutting direction CD, in the flexible base substrate 102, the width of the lower film layer (toward the support substrate 108) may be greater than the width of the higher film layer (away from the support substrate 108). For example, the bottom surface of the first oxide layer 112 has a first width W1 along the horizontal direction D3, and the bottom surface of the second oxide layer 114 has a second width W2 along the horizontal direction D3, wherein the first width W1 of the first oxide layer 112 is greater than the second width W2 of the second oxide layer 114.

[0044] In some embodiments, the first insulating layer 116 and the second insulating layer 118 may have at least one opening OP2, exposing the second oxide layer 114 in the peripheral region PR of the flexible display device 100, for example, near the edge portion E of the flexible base substrate 102. For example, the number of openings OP2 may be multiple. Since partial fractures may occur at the edge of the first insulating layer 116 and the edge of the second insulating layer 118, the first insulating layer 116 and the second insulating layer 118 may be provided with openings OP2 to avoid fractures of the first insulating layer 116 and the second insulating layer 118 after multiple bending. In some embodiments, the opening OP2 may also extend to the second oxide layer 114. That is, the second oxide layer 114 may include an opening OP2, exposing or not exposing the first flexible substrate 110.

[0045] According to some embodiments, fluorine ions may be implanted into the first oxide layer 112 and / or the second oxide layer 114. Since fluorine ions may break twisted bonds, such as Si-O-Si bonds or Si-Si bonds, to form stronger Si-F bonds, the flexibility of the first oxide layer 112 and / or the second oxide layer 114 may be increased. In addition, impurities (such as ions) contained in the first flexible substrate 110 and / or the second flexible substrate 120 may diffuse toward the display structure 104 and affect the electrical characteristics. By implanting fluorine ions into the first oxide layer 112 and the second oxide layer 114, the impurities are restricted by the fluorine ions, thereby preventing the impurities from affecting the electrical characteristics of the display structure 104. The fluorine ion concentration of the first oxide layer 112 and / or the second oxide layer 114 may be between 1×10 18 atoms / cm3 3 ) to 5×10 20 atoms / cm3 3 ), wherein the fluorine ion concentration is measured by a secondary ion mass spectrometer (SIMS).

[0046] The flexible electronic device (flexible display device) of the present invention is not limited to the above-mentioned embodiments. More variant embodiments and other embodiments of the present invention are described below. In order to facilitate the comparison of different embodiments and simplify the description, the same elements will be marked with the same symbols below. The following description will explain the differences between different embodiments in detail, and the same features will not be repeated.

[0047] Figure 3 FIG. 1 is a cross-sectional view of a flexible substrate according to a first variation of the first embodiment of the present invention. Figure 3The first insulating layer, the second insulating layer, the second flexible substrate and the supporting substrate are omitted, but not limited to this. The difference between the flexible base substrate 102A of this variation embodiment and the aforementioned embodiment is that the flexible base substrate 102A of this variation embodiment has a wavy shape. Specifically, the third thickness TH3 of the first flexible substrate 110A is substantially consistent, and the first flexible substrate 110A has two wavy surfaces 110S1 and 110S2 relative to each other. For this reason, the display structure, the first insulating layer, the second insulating layer and the second oxide layer 114A formed on the wavy surface 110S1 of the first flexible substrate 110A and the first oxide layer 112A and the second flexible substrate formed on the other wavy surface 110S2 of the first flexible substrate 110A may also have a wavy shape. With this design, the damage caused to the flexible display device when it is bent can be reduced. For example, compared to the flexible display device 100 of the first embodiment, the flexible display device including the flexible base substrate 102A may have better or more stable electrical characteristics after being bent several times (e.g., 100 times or more). In detail, when the first oxide layer 112A and the second oxide layer 114A are formed on the first flexible substrate 110A, the first flexible substrate 110A is in a stretched state. After the first oxide layer 112A and the second oxide layer 114A are formed, the first flexible substrate 110A may be released from the stretched state, and then the flexible base substrate 102A having a wavy shape may be formed. The first flexible substrate 110A, the first oxide layer 112A, and the second oxide layer 114A included in the flexible base substrate 102A may also include a wavy shape. For example, the wavy first flexible substrate 110A may have multiple waves, wherein the spacing S1 between the troughs of two adjacent waves may be between 1 micron and 50 microns, and in the vertical direction D2, the spacing S2 between the crest and trough of one of the waves may be between 1 micron and 50 microns.

[0048] Figure 4 FIG. 1 is a cross-sectional view of a flexible display device according to a second variation of the first embodiment of the present invention. Figure 4The supporting substrate and the peripheral area of ​​the flexible display device are omitted, but not limited to this. The difference between the flexible display device 100B of this variant embodiment and the aforementioned embodiment is that the first oxide layer 112B of this variant embodiment has an uneven surface, so that the contact area between the first oxide layer 112B and the first flexible substrate 110B is increased. In this variant embodiment, the first flexible substrate 110B facing the first oxide layer 112B may have a plurality of grooves 110R. For example, in the bendable region FR, the first oxide layer 112B may be filled in the groove 110R. Therefore, the interface between the first flexible substrate 110B and the first oxide layer 112B may be an uneven surface, and the surface area may be increased, thereby more effectively blocking moisture or gas. In some embodiments, the groove 110R may be formed only in the bendable region FR, and not formed in the first region R1 and the second region R2. In this variation, since the first oxide layer 112B is uniformly formed on the first flexible substrate 110B, the surface of the first oxide layer 112B facing the second flexible substrate 120B may also be uneven and may have a plurality of grooves 112R. Therefore, the area of ​​the interface between the first oxide layer 112B and the second flexible substrate 120B may be increased. In some embodiments, the interface between the first flexible substrate 110B and the first oxide layer 112B may be flat, and the surface of the first oxide layer 112B facing the second flexible substrate 120B may be uneven. In this case, the first flexible substrate 110B may not include the groove 110R, but the first oxide layer 112B includes the groove 112R.

[0049] Figure 5 1 is a cross-sectional schematic diagram of a flexible display device of the third variant embodiment of the first embodiment of the present invention. The difference between the flexible display device 100C of this variant embodiment and the aforementioned embodiment is that the flexible base substrate 102C of this variant embodiment has a groove 102R in the bendable region FR to increase the flexibility of the flexible display device 100C in the bendable region FR. Specifically, the second flexible substrate 102C and the supporting substrate 108C have an opening OP3 (or a groove 102R) in the bendable region FR, wherein the opening OP3 exposes a portion of the first oxide layer 112C. In some embodiments, the flexible base substrate 102C may further include a waterproof layer 124 disposed in the opening OP3, and the waterproof layer 124 may cover the exposed portion of the first oxide layer 112C and prevent moisture from entering the flexible display device 100C. In some embodiments, the surface of the exposed portion of the first oxide layer 112C facing the waterproof layer 124 may be uneven, for example, may have a groove. Therefore, the contact area between the waterproof layer 124 and the first oxide layer 112C can be increased, thereby improving the adhesion effect between the waterproof layer 124 and the first oxide layer 112C.

[0050] Figure 6 FIG. 1 is a cross-sectional view of a flexible display device according to a fourth variation of the first embodiment of the present invention. Figure 6 The support substrate is omitted, but the present invention is not limited thereto. The difference between the flexible display device 100D of this variant embodiment and the aforementioned embodiment is that one of the first flexible substrate 110D, the second oxide layer 114D, the second insulating layer 118D and the first insulating layer 116D of this variant embodiment may have at least one groove RD corresponding to the conductive line in the peripheral region PR, for example, in the bending region BR of the peripheral region PR (such as Figure 1 ). Specifically, the first metal layer M1, the second metal layer M2 or other metal layers may include at least one conductive wire 126 disposed on the groove RD, for example, the first metal layer M1 includes the conductive wire 126 in the peripheral region PR. In this variation, the first flexible substrate 110D may have a groove RD relative to the surface of the first oxide layer 112 in the peripheral region PR, and the flexible display device 100D may also include a conductive material 128 filled in the groove RD, wherein the conductive material 128 is disposed between the first flexible substrate 110D and the conductive wire 126. The conductive wire 126 may be disposed in the opening 1140 of the second oxide layer 114D to contact the conductive material 128. For example, the conductive material 128 may include a conductive glue to fill the groove RD, but is not limited thereto. Since the conductive material 128 is more flexible than the conductive wire 126, even if the conductive wire 126 is damaged after being bent, the damaged parts of the conductive wire 126 can still be electrically connected to each other via the conductive material 128. In some embodiments, the flexible display device 100D may not include a conductive material, and the conductive wire 126 may be filled in the groove RD. In this case, the conductive wire 126 and the first flexible substrate 110D may have a larger contact area, thereby increasing the adhesion effect between the conductive wire 126 and the first flexible substrate 110D and reducing the damage of the conductive wire 126. In some embodiments, the groove RD may also be included in any one of the second oxide layer 114D, the second insulating layer 118D, and the first insulating layer 116D. In some embodiments, the length L1 of the top of the groove RD along the horizontal direction D3 may be greater than the length L2 of the bottom of the groove RD along the horizontal direction D3. For example, the shape of the cross-sectional view of the groove RD may be an inverted trapezoid, an arc, a bullet shape, a sawtooth shape, or other suitable shapes, and the shape may be formed, for example, by lithography or laser etching.

[0051] Figure 7 FIG. 1 is a cross-sectional view of a flexible display device according to a fifth variation of the first embodiment of the present invention. Figure 7The support substrate is omitted, but the present invention is not limited thereto. The difference between the flexible display device 100E of this variant embodiment and the aforementioned embodiment is that one of the first insulating layer 116E, the second insulating layer 118E, the second oxide layer 114E and the first flexible substrate 110E of this variant embodiment may include at least one bump BP (protrusion) disposed in the peripheral region PR of the flexible display device 100E, for example, in the bending region BR (such as Figure 1 ). The first metal layer M1, the second metal layer M2 or other suitable metal layer may include at least one conductive wire 130, which is disposed on the corresponding bump BP. In other words, the conductive wire 130 may be formed by the same metal layer as the first metal layer M1 or the second metal layer M2. For example, the second insulating layer 118E includes at least one bump BP. In other words, the second insulating layer 118E has a thickness T1 in the portion corresponding to the bump BP and a thickness T2 in the portion outside the bump, wherein the thickness T1 is greater than the thickness T2. The conductive wire 130 is disposed on the bump BP and in contact with the bump BP, so that the cracks generated at the edge of the second insulating layer 118E will not easily extend to the interface between the conductive wire 130 and the bump BP, thereby reducing the peeling of the conductive wire 130 after bending. For example, the ratio of the first thickness T1 to the second thickness T2 is between 1.1 and 2. In some embodiments, when the conductive wire 130 is formed by the first metal layer M1, the insulating layer IL1 may cover the conductive wire 130 in the peripheral region PR. In some embodiments, the bump BP may be included in one of the first insulating layer 116E, the second oxide layer 114E, and the first flexible substrate 110E.

[0052] Figure 8 2 is a cross-sectional schematic diagram of a flexible display device according to a second embodiment of the present invention. The difference between the flexible display device 200 of this embodiment and the first embodiment is that the first oxide layer of the first embodiment can be replaced by a conductive layer CL in this embodiment, and the first thickness THc of the conductive layer CL is greater than the second thickness TH2 of the second oxide layer 214. In other words, the flexible base substrate 202 includes a conductive layer CL located between the first flexible substrate 210 and the second flexible substrate 220. With this design, the conductive wire on the first flexible substrate 210 located in the peripheral region PR can be electrically connected to the conductive wire located on the bottom surface 220S of the second flexible substrate 220 relative to the conductive layer CL through the conductive layer CL.

[0053] Specifically, the conductive layer CL may include a main portion MP located in the active region AR and a signal transmission portion SP located in the peripheral region PR. The signal transmission portion SP may include at least one contact CT. The control element 106 may be disposed on a bottom surface 220S of the second flexible substrate 220 facing the support substrate 208, and may be electrically connected to the electronic structure EL through the contact CT of the conductive layer CL. In some embodiments, when taking a flexible display device 200 with a display function as an example, the active region AR is a display region DR, and the control element 106 may be electrically connected to the display structure 104 through the contact CT of the conductive layer CL. The main portion MP covers the display structure 104 located in the display region DR, for example, covers Figure 1The first region R1, the bendable region FR, and the second region R2 shown in the figure allow the display structure 104 to still be protected to prevent moisture or gas (such as oxygen) from penetrating. In addition, the contact CT is arranged in the peripheral region PR and is insulated from the main part MP. The first flexible substrate 210 has at least one contact hole CH3, exposing the top surface of the contact CT, and the first metal layer M1 may include at least one first wire 232, located on the first flexible substrate 210 in the peripheral region PR, wherein the first wire 232 is filled in the contact hole CH3 to be electrically connected to the contact CT. The second flexible substrate 220 may have at least one contact hole CH4, exposing the bottom surface of the contact CT. The flexible display device 200 may also include at least one second wire 234 arranged on the bottom surface 220S of the second flexible substrate 220, wherein the second wire 234 is filled in the contact hole CH4 to be electrically connected to the contact CT1, for example. Therefore, the first conductive line 232, the contact CT1 and the second conductive line 234 provide a path for electrically connecting the display structure 104 on the first surface 202a of the flexible base substrate 202 and the control element 106 on the bottom surface 220S of the second flexible substrate 220. In addition, in order to form the first conductive line 232 on the first flexible substrate 210, the first insulating layer 216, the second insulating layer 218 and the second oxide layer 214 may have an opening exposing the contact hole CH3. For example, in order to block moisture, the opening OP4 of the first insulating layer 216 and the second insulating layer 218 may be larger than the opening OP5 of the second oxide layer 214. According to this arrangement, the control element 106 can be disposed on the bottom surface 220S, so that the area of ​​the peripheral region PR can be reduced. In some embodiments, similar to the first metal layer M1, the second metal layer M2 may also include a third conductive line 236, which is filled in another contact hole CH3 and electrically connected to the fourth conductive line 238 on the bottom surface 220S through another contact CT2. In some embodiments, the control element 106 may be separated from the support substrate 208. In some embodiments, the first conductive line 232 may be formed by the second metal layer M2. In some embodiments, the third conductive line 236 may be formed by the first metal layer M1. In some embodiments, the first conductive line 232 and the third conductive line 236 may be formed by the same metal layer, for example, by the first metal layer or the second metal layer. In some embodiments, the first conductive line 232 and the third conductive line 236 may be formed by other metal layers. In some embodiments, the first metal layer M1 may be a film layer forming the gate of the transistor T, and the second metal layer M2 may be a film layer forming the source and drain of the transistor T.

[0054] In the present embodiment, the flexible display device 200 can be formed according to the method described below. First, a second flexible substrate 220 is provided, and then a conductive layer CL is formed on the second flexible substrate 220, and the conductive layer CL is patterned to form a main portion MP in the active region AR and a signal transmission portion SP in the peripheral region PR. Next, the first flexible substrate 210, the second oxide layer 214, the second insulating layer 218 and the first insulating layer 216 are stacked on the conductive layer CL in sequence, and then the display structure 104, the contact hole CH3, the first conductive line 232 and the third conductive line 236 are formed. After that, the contact hole CH4, the second conductive line 234 and the fourth conductive line 238 are formed, and then the support substrate 208 is adhered to the bottom surface 220S of the second flexible substrate 220, and the control element 106 is bonded to the second conductive line 234. In some embodiments, before forming the second flexible substrate 220, the second oxide layer 214 and the conductive layer CL may be separately formed on the first flexible substrate 210, and then the conductive layer CL may be patterned. Thereafter, the second flexible substrate 220 may be coated on the conductive layer CL and the first flexible substrate 210. In some embodiments, the flexible display device 200 may not include the second insulating layer 218 and the first insulating layer 216.

[0055] Fig. 9 It is a schematic cross-sectional view of a flexible display device of a first variant embodiment of the second embodiment of the present invention. The difference between the flexible display device 200A of this variant embodiment and the aforementioned embodiment is that the conductive layer CLA of this variant embodiment has an uneven surface in the bendable region FR, so that the flexibility of the flexible display device 200A can be improved. For example, the conductive layer CLA may have a plurality of grooves CLR facing the second flexible substrate 220. The ratio of the thickness T3 of the conductive layer CLA outside the groove CLR to the thickness T4 of the conductive layer CLA in the area where the groove CLR is set is between 1.1 and 2. In some embodiments, the conductive layer CLA may have a groove CLR, and the width of the groove CLR may be the same as the width of the bendable region FR. In some embodiments, the groove CLR of the conductive layer CLA may be aligned with the first bending axis FX1 (such as Figure 1 In some embodiments, the conductive layer CLA may have at least one opening in the bendable region FR. In some embodiments, the flexible display device 200 may not include the second insulating layer 218 and the first insulating layer 216.

[0056] Fig.10FIG. 2 is a cross-sectional view of a flexible display device of a second variant of the second embodiment of the present invention. The difference between the flexible display device 200B of this variant embodiment and the aforementioned embodiment is that the conductive layer CLB of this variant embodiment has an opening OP6 in the bendable region FR, and in the horizontal direction D3, the width of the opening OP6 can be substantially the same as the width of the bendable region FR. In some embodiments, the opening OP6 of the conductive layer CLB can be aligned with the first bending axis FX1 (e.g., Figure 1 In some embodiments, the flexible base substrate 202B may also include a first oxide layer 212 located between the first flexible substrate 210 and the second flexible substrate 220 and in the opening OP6. The first oxide layer 212 may cover the opening OP6 and the bendable region FR so that moisture or gas may be blocked. In some embodiments, although not shown in the figure, the first oxide layer 212 may also extend and be disposed between the conductive layer CLB and the first flexible substrate 210, or between the conductive layer CLB and the second flexible substrate 220. In some embodiments, the flexible display device 200 may not include the second insulating layer 218 and the first insulating layer 216.

[0057] Fig.11 is a schematic top view of a flexible display device according to a third variation of the second embodiment of the present invention, Fig.12 for Fig.11 The cross-sectional view of the flexible display device shown in FIG. 2 is a schematic diagram along the section line A-A' and the section line BB'. Compared with the above-mentioned embodiment, the flexible display device 200C of this embodiment is a stretchable display device. In this embodiment, the flexible base substrate 202C can be patterned so that the flexible base substrate 202C has a grid shape in the top view direction. In this case, the flexible base substrate 202C can be stretched along the stretching direction SD, such as Fig.11As shown. Specifically, the grid-shaped flexible base substrate 202C includes a plurality of unit portions UP and a plurality of connection portions CP, and any two adjacent unit portions UP can be connected to each other through a connection portion CP. Since the width of one of the connection portions CP is smaller than the width of one of the unit portions UP, when the flexible display device 200C is stretched, the relative positions between the unit portions UP can be changed, which also means that the arrangement of the unit portions UP can be changed by stretching. For example, the size of the flexible display device 200C in the horizontal direction D3 can be enlarged by stretching the flexible display device 200C along the same stretching direction SD as the horizontal direction D3, so that the user can see the enlarged display image. When the flexible display device 200C is not stretched, the size of the flexible display device 200C in the horizontal direction D3 can be reduced, making the flexible display device 200C easy to carry. Since the flexible base substrate 202C is in a grid shape, the film layer in the flexible base substrate 202C can have a grid shape.

[0058] In the present embodiment, the flexible base substrate 202C may include a supporting substrate 208C, a first flexible substrate 210C, a conductive layer CLC, and a second oxide layer 214C, and the supporting substrate 208C, the first flexible substrate 210C, the conductive layer CLC, and the second oxide layer 214C all have a grid shape in a top view direction. In some embodiments, the flexible base substrate 202C may selectively include a grid-shaped second flexible substrate 220C located between the supporting substrate 208C and the conductive layer CLC. In some embodiments, the flexible base substrate 202C may also selectively include a grid-shaped second insulating layer (not shown) and a grid-shaped first insulating layer (not shown) stacked sequentially on the second oxide layer 214C. In some embodiments, although not shown in the figure, the connecting portion CP may not include the second oxide layer 214C to increase the stretchability of the flexible display device 200C.

[0059] Please refer to Fig.11 and Fig.12 In this embodiment, the display structure 204C may include a plurality of display unit structures US respectively disposed on the unit portion UP, wherein the display unit structures US are separated from each other. Each display unit structure US may include at least one light emitting unit LD and at least one transistor T. In some embodiments, each display unit structure US may include a plurality of light emitting units LD and a plurality of transistors T. In some embodiments, the display structure 204C may be replaced with a patterned electronic structure having no display function.

[0060] Since the display unit structures US are separated from each other, adjacent display unit structures US can be electrically connected to each other through the conductive layer CLC. Specifically, the conductive layer CLC may include a plurality of conductive lines WR1 that are insulated from each other. Each display unit structure US may include at least one contact, so that adjacent display unit structures US can be electrically connected to each other through the conductive lines WR1 and the contact. For example, please refer to Fig.12 , the adjacent display unit structure US may include a contact CTC1 passing through the gate insulating layer GI, the second oxide layer 214C and the first flexible substrate 210C to contact one of the wires WR1. The first metal layer M1 may include wires WR2 respectively arranged in two adjacent display unit structures US, and the wires WR2 may be electrically connected to each other through the contact CTC1 and one of the wires WR1. In some embodiments, the wire WR1 and the contact CTC1 may also be formed by the first metal layer M1, but is not limited to this. In some embodiments, the contact CTC1 may not be included in the display unit structure US, but may be included in the connecting portion CP between the display unit structures US. The contact CTC1 may pass through the second oxide layer 214C and the first flexible substrate 210C to contact the first wire WR1. In this case, although Fig.12 It is not shown that the wire WR2 of the first metal layer M1 can be in contact with the contact CTC1 in the connecting part CP respectively. Therefore, the wire WR2 of two adjacent display unit structures US can be electrically connected to each other through the contact CTC1 and the wire WR1. Similarly, the second metal layer M2 may include a wire WR3 respectively arranged in two adjacent display unit structures US, and the two adjacent display unit structures US may include a contact CTC2. The contact CTC2 may pass through the gate insulating layer GI, the second oxide layer 214C, the first flexible substrate 210C and the insulating layer IL1. Therefore, the wire WR3 of the second metal layer M2 in different display unit structures US can be electrically connected to each other through one of the contact CTC2 and the wire WR1. In some embodiments, the wire WR3 and the contact CTC2 may also be formed by the second metal layer M2, but are not limited to this.

[0061] In summary, according to the contents of some embodiments, by stacking the first oxide layer, the first flexible substrate, and the second oxide layer, or by stacking the conductive layer, the first flexible substrate, and the second oxide layer, the flexible electronic device of the present invention can effectively prevent moisture or gas (such as oxygen) that can damage the electronic structure or display structure from passing through the flexible base substrate. Therefore, the electrical properties of the electronic structure or display structure will not be affected, thereby improving the stability and reliability of the flexible electronic device and increasing the service life of the flexible electronic device.

[0062] The above description is only an embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A flexible electronic device, characterized in that: include: a supporting substrate; A first flexible substrate, disposed on the supporting substrate, wherein the first flexible substrate comprises an active region and a peripheral region adjacent to the active region; a semiconductor layer disposed on the first flexible substrate and in the active region; a first insulating layer, disposed between the first flexible substrate and the semiconductor layer, and having a first opening, wherein the first opening is disposed in the peripheral region; a protective layer, disposed on the semiconductor layer; a first oxide layer disposed between the first flexible substrate and the supporting substrate; a second oxide layer disposed between the first flexible substrate and the first insulating layer; an electronic structure disposed on the second oxide layer, wherein the first insulating layer is disposed between the second oxide layer and the electronic structure; as well as a second insulating layer, disposed between the second oxide layer and the first insulating layer; wherein a portion of the protective layer is disposed in the first opening; The ratio of the sum of the thickness of the second oxide layer, the thickness of the second insulating layer and the thickness of the first insulating layer to the thickness of the first oxide layer is between 0.5 and 2.

2. The flexible electronic device according to claim 1, wherein: The second insulating layer is disposed between the first insulating layer and the semiconductor layer.

3. The flexible electronic device according to claim 1, wherein: The second insulating layer has a second opening, and the second opening overlaps with the first opening.

4. The flexible electronic device according to claim 3, wherein: The portion of the protection layer is disposed in the second opening.

5. The flexible electronic device according to claim 1, wherein: The first flexible substrate has at least one groove.

6. The flexible electronic device according to claim 1, wherein: The invention also includes a second flexible substrate, which is arranged between the first flexible substrate and the supporting substrate.

7. The flexible electronic device according to claim 1, wherein: In a cross-sectional view of the flexible electronic device, the first opening of the first insulating layer has a first sidewall and a second sidewall opposite to each other, and the portion of the protection layer contacts the first sidewall and the second sidewall of the first opening.

8. The flexible electronic device according to claim 1, wherein: The electronic structure further includes a light emitting unit disposed on the semiconductor layer, wherein the protective layer is disposed on the light emitting unit.

9. The flexible electronic device according to claim 1, wherein: The material of the first flexible substrate includes at least one of polyimide, polyethylene terephthalate, polycarbonate, polyethersulfone, polybutylene terephthalate, polyethylene naphthalate and polyarylate.

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