A reaction chamber device

Abstract

The present application discloses a reaction chamber device, in which a processing position for processing a workpiece to be processed is provided in the chamber. The device includes at least two concentrically arranged transfer devices, each of the transfer devices is provided with a plurality of support portions, and the processing position is located between two adjacent transfer devices; and among two adjacent transfer devices, at least one support portion of the transfer device located on the outer side and at least one support portion of the transfer device located on the inner side form a support position for supporting the workpiece to be processed, and the support portions of all the transfer devices can rotate concentrically. In the present application, the processing positions of the reaction chamber device are distributed between two adjacent transfer devices, and there is a radial distance between the support portions of the transfer device located on the outer side and the support portions of the transfer device located on the inner side. In this way, the support portions for supporting the workpiece to be processed do not need to be located above the entire heating plate, thereby reducing the probability of generating contamination particles and ensuring the processing quality of the workpiece to be processed.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor processing, and particularly to a reaction chamber device. Background Art

[0002] The wafer needs to be heated in the chamber of the reaction chamber. A plurality of heating plates are arranged on the bottom wall of the chamber along the circumferential direction, and the wafer can be transferred to the position of the heating plate for heating.

[0003] In order to transfer the wafer, a wafer transfer device is arranged in the middle of the bottom wall of the chamber. The wafer transfer device includes a plurality of support arms extending radially. Each support arm is used to support a wafer. If the wafer needs to be located above the heating plate, each support arm needs to extend above the heating plate and span the entire heating plate. In this way, the support arm is likely to contaminate the heating plate, thereby affecting the quality of the wafer. Summary of the Invention

[0004] The present application provides a reaction chamber device, in which a processing position for processing a workpiece to be processed is provided in the chamber. The reaction chamber device includes at least two transfer devices arranged concentrically. Each of the transfer devices is provided with a plurality of support parts. The processing position is located between two adjacent transfer devices. And in two adjacent transfer devices, at least one support part of the transfer device located on the outer side and at least one support part of the transfer device located on the inner side form a support position for supporting the workpiece to be processed. All the support parts of all the transfer devices can rotate concentrically.

[0005] In a specific embodiment, the support position includes three support parts, two of which are located on the outer side and the other is located on the inner side.

[0006] In a specific embodiment, the support part is provided with a step part. The step surface of the step part is used to support the workpiece to be processed, and the step side wall of the step part is a guiding inclined surface.

[0007] In a specific embodiment, the reaction chamber device includes three or more transfer devices. The transfer device located between two transfer devices includes a group of support parts located on the inner side for cooperating with the inner transfer device to form a support position, and support parts located on the outer side for cooperating with the outer transfer device to form a support position. And the support parts located on the inner side and the support parts located on the outer side can rotate synchronously or independently.

[0008] In a specific embodiment, a first annular groove is provided on the bottom wall of the chamber of the reaction chamber device. The transfer device located on the innermost side is arranged in the middle of the bottom wall of the chamber, and the other transfer devices are installed in the corresponding first annular grooves.

[0009] In a specific embodiment, the conveying device disposed in the first annular groove includes an annular mounting seat. The annular mounting seat is provided with a second annular groove having a notch facing away from the bottom wall of the chamber. The annular mounting seat is hermetically connected to the first annular groove. An annular rotating shaft is disposed in the second annular groove, and a magnetorheological fluid is filled between the annular rotating shaft and the second annular groove. The supporting portion is disposed on the annular rotating shaft. A first rotation driving device is further included, and the first rotation driving device is used to rotate the annular rotating shaft.

[0010] In a specific embodiment, a first transmission portion is further included. An opening is provided at the bottom of the first annular groove. Either the first transmission portion or the annular rotating shaft can pass through the opening to establish a connection therebetween. The first rotation driving device drives the first transmission portion to rotate to drive the annular rotating shaft to rotate.

[0011] In a specific embodiment, the first transmission portion is a gear, and teeth capable of meshing with the gear are provided along the circumferential direction at the bottom of the annular rotating shaft.

[0012] In a specific embodiment, first bellows are provided on both radial sides of the opening, and the first bellows are located between the bottom of the annular mounting seat and the bottom of the first annular groove. The annular mounting seat is hermetically connected to the first annular groove through the first bellows.

[0013] A lifting driving device and a second transmission portion are further included. Either the second transmission portion or the annular mounting seat passes through the opening to establish a connection therebetween. The lifting driving device drives the second transmission portion to lift to drive the annular mounting seat to lift.

[0014] In a specific embodiment, the first transmission portion is a gear, and teeth capable of meshing with the gear are provided along the circumferential direction at the bottom of the annular rotating shaft.

[0015] The second transmission portion includes transmission rods respectively disposed on both radial sides of the opening, and the gear is located between the two transmission rods.

[0016] In a specific embodiment, the reaction chamber device is provided with a second rotation driving device and a magnetorheological fluid bearing for driving the innermost conveying device to rotate. A through hole is provided in the middle of the bottom wall of the chamber. The magnetorheological fluid bearing passes through the through hole to be connected to the innermost conveying device, and the second rotation driving device drives the magnetorheological fluid bearing to rotate to drive the conveying device connected to the magnetorheological fluid bearing to rotate.

[0017] In a specific embodiment, the workpiece to be processed is a wafer, and a plurality of heating plates are provided on the bottom wall of the chamber of the reaction chamber device, and the heating plates form the processing positions.

[0018] In this application, the processing position of the reaction chamber device is located between two adjacent transfer devices. There is a radial distance between the support parts of the transfer device on the outer side and the support parts of the transfer device on the inner side. In this way, the support parts for supporting the workpiece to be processed do not need to be located above the entire heating plate, or only the end part is located above the heating plate, thereby reducing the probability of generating pollution particles and ensuring the processing quality of the workpiece to be processed. Description of the Drawings

[0019] Figure 1 is a schematic diagram of the reaction chamber device in the first embodiment of this application;

[0020] Figure 2 is Figure 1 a top view of

[0021] Figure 3 is Figure 1 a schematic diagram after the reaction chamber device in receives a wafer;

[0022] Figure 4 is Figure 3 a top view of

[0023] Figure 5 is Figure 1 a schematic diagram without showing the heating plate in ;

[0024] Figure 6 is Figure 1 a schematic diagram of a support position in ;

[0025] Figure 7 is Figure 6 a schematic diagram of the first support part in ;

[0026] Figure 8 is Figure 7 a top view of

[0027] Figure 9 is Figure 6 a schematic diagram of the second support part in ;

[0028] Figure 10 is Figure 9 a front view of

[0029] Figure 11 is Figure 3 an axial sectional view of the reaction chamber device in ;

[0030] Figure 12 is Figure 9 a front view of

[0031] Figure 13 is Figure 12 an enlarged view of part A in ;

[0032] Figure 14 For Figure 11 Schematic diagrams of the external conveyor device, the first rotation drive device, and the first lifting drive device;

[0033] Figure 15 For Figure 14 Schematic diagram of the external conveyor device;

[0034] Figure 16 For Figure 14 Schematic diagrams of the internal conveyor device, the second rotation drive device, and the second lifting drive device;

[0035] Figure 17 For Figure 16 Front view of;

[0036] Figure 18 For Figure 12 Enlarged view of part B in;

[0037] Figure 19 Schematic diagram after the reaction chamber device in the second embodiment of the present application receives a wafer.

[0038] Figures 1 - 19 The reference numerals in the figure are as follows:

[0039] 11 - Chamber bottom wall; 11a - Through hole; 11b - First annular groove; 12 - Annular chamber side wall; 13 - Heating plate;

[0040] 2 - External conveyor device; 21 - Annular mounting seat; 22 - Annular rotating shaft; 221 - Teeth; 23 - First support part;

[0041] 3 - Internal conveyor device; 31 - Second support part; 32 - Support frame;

[0042] 4 - First bellows;

[0043] 51 - Second rotation motor; 52 - Second lifting motor; 53 - Second lifting bracket; 54 - Magneto - fluid rotating shaft; 55 - Lifting block;

[0044] 6 - Second bellows;

[0045] 71 - First rotation bracket; 72 - First lifting motor; 73 - Gear; 74 - First rotation motor; 75 - First lifting bracket; 76 - Transmission rod. Detailed implementation manners

[0046] In order to enable those skilled in the art to better understand the solution of the present invention, the present invention will be further described in detail below with reference to the drawings and specific implementation manners.

[0047] Embodiment 1

[0048] As Figures 1 - 5As shown Figure 1 is a schematic diagram of the reaction chamber device in the first embodiment of the present application; Figure 2 is Figure 1 the top view of; Figure 3 is Figure 1 the schematic diagram after the wafer 100 is introduced into the reaction chamber device in;

[0049] Figure 4 is Figure 3 the top view of; for better showing the first support portion 23 and the second support portion 31, Figure 5 is Figure 1 the schematic diagram when the heating plate 13 is not shown in;

[0050] The reaction chamber device in this embodiment includes a chamber, Figure 1 shows the chamber bottom wall 11 forming the chamber and the annular chamber side wall 12 surrounding the chamber bottom wall 11. The chamber bottom wall 11 is specifically circular, and the annular chamber side wall 12 is correspondingly cylindrical. The reaction chamber device further includes an upper cover (not shown in the figure), which is clamped on the annular chamber side wall 12 to form a closed chamber. A vacuum environment can be established in the chamber to ensure the progress of the reaction of the wafer 100. A plurality of heating plates 13 are provided along the circumferential direction of the chamber bottom wall 11. The wafer 100 can be transmitted into the chamber through an external mechanism and placed on the heating plates 13 for thin film deposition and other operations. The position of the heating plates 13 is the processing position of the wafer 100.

[0051] In order to transmit the wafer 100 from the upstream transfer module to the processing position for processing and then transmit it to the next transfer module after processing, the reaction chamber device is further provided with at least two concentric transfer devices. The transfer devices are also concentric with the chamber bottom wall 11 and the annular chamber side wall 12. The transfer devices are used to support and transmit the wafer 100. Two transfer devices are provided in the reaction chamber device in this embodiment, which are respectively defined as the inner transfer device 3 and the outer transfer device 2. The processing position is located between the inner transfer device 3 and the outer transfer device 2. In the following embodiments, the inner and outer are defined based on this, that is, the one close to the center of the transfer device is the inner, and vice versa. In this embodiment, the inner transfer device 3 is arranged in the middle of the chamber bottom wall 11 of the reaction chamber device.

[0052] In this embodiment, each transfer device is provided with a plurality of support portions. Among them, the support portion of the outer transfer device 2 is defined as the first support portion 23, and the support portion of the inner transfer device 3 is defined as the second support portion 31. At least one first support portion 23 and at least one second support portion 31 are combined to form a support position, and one support position can support one wafer 100.

[0053] Figure 2In this case, each support position is composed of a second support portion 31 located on the inner side and two first support portions 23 located on the outer side. In this way, each wafer 100 is jointly supported by two first support portions 23 and a second support portion 31, thereby forming a three-point support to achieve the purpose of stable support. It can be seen that a three-point support can also be formed by two second support portions 31 and a first support portion 23. Since the first support portion 23 is provided on the outer transfer device 2, and the outer transfer device 2 surrounds the outer side of the inner transfer device 3 and has larger radial and circumferential dimensions, which is convenient for arranging a larger number of support portions, so two first support portions 23 and a second support portion 31 are selected to form a support position. Of course, on the premise of ensuring stable support, one first support portion 23 and one second support portion 31 are also possible, or multiple first support portions 23 and multiple second support portions 31 are also possible, and this embodiment does not make specific restrictions.

[0054] In addition, the inner transfer device 3 and the outer transfer device 2 are respectively located inside and outside the processing position. The first support portion 23 and the second support portion 31 of each support position can be set to have a spacing in the radial direction, and both the first support portion 23 and the second support portion 31 can rotate concentrically. When the wafer 100 is transferred into the reaction chamber device, the wafer 100 can be transferred to the support position corresponding to the end of the transfer path. One or more wafers 100 can be transferred at a time. Taking two wafers 100 as an example, the position of the support position corresponding to the end of the transfer path is defined as the transfer position. Then, two wafers 100 can be transferred to two support positions located at the transfer position at the same time. When transferring two wafers 100 again, the two support positions currently supporting the wafers 100 can be rotated away from the transfer position by rotation, and the two support positions not supporting the wafers 100 are rotated to reach the transfer position. Repeat this several times until all support positions support the wafers 100.

[0055] As mentioned above, the bottom wall 11 of the chamber of the reaction chamber device is provided with a plurality of heating plates 13. One support position is correspondingly located above one heating plate 13. Then, the wafer 100 supported by the support position can be directly processed by the support position or dropped onto the heating plate 13 below for processing. In this embodiment, the support position is composed of a first support portion 23 provided on the outer transfer device 2 and a second support portion 31 provided on the inner transfer device 3. Among them, the outer transfer device 2 can be arranged outside the heating plate 13, and there is a spacing in the radial direction between the first support portion 23 and the second support portion 31. In this way, only the end portions of the first support portion 23 and the second support portion 31 pass above the heating plate 13 when transferring the wafer, thereby reducing the probability of generating contamination particles. The end of the first support portion 23 facing the inner support device 3 is the end, and the end of the second support portion 31 facing the outer support device is the end. The end is used to directly support the wafer 100.

[0056] Compare Figure 4 、5 It is understood that the first support portion 23 and the second support portion 31 only need to support the outer edge of the wafer 100 at the ends. It can be seen that in this embodiment, the processing position provided in the chamber is not limited to the heating plate 13 for heating the wafer 100. For other processing positions for processing wafers or processing positions for processing workpieces to be processed other than wafers, setting the transfer device so that it does not need to straddle the processing position is conducive to reducing the influence on the processing position and ensuring the quality of the workpiece to be processed after processing.

[0057] As Figure 6 shown, Figure 6 is Figure 1 a schematic diagram of one of the support positions; Figure 7 is Figure 6 a schematic diagram of the first support portion 23; Figure 8 is Figure 7 a top view; Figure 9 is Figure 6 a schematic diagram of the second support portion 31; Figure 10 is Figure 9 a front view.

[0058] Specifically, the first support portion 23 and the second support portion 31 can be provided with stepped portions. As Figures 7 - 9 shown, the first support portion 23 is provided with a first stepped portion, including a first step surface 231 and a first step side wall 232, and the second support portion 31 is provided with a second stepped portion, including a second step surface 311 and a second step side wall 312. Among them, the first step surface 231 and the second step surface 311 are used to contact the bottom of the wafer 100 to support the wafer 100, and the first step side wall 232 and the second step side wall 312 are provided with slopes to transition to the corresponding first step surface 231 and second step surface 311. In this way, after the wafer 100 is transferred to the first support portion 23 and the second support portion 31, under the guiding action of the slopes, the wafer 100 can be automatically adjusted to the first step surface 231 and the second step surface 311, so as to be automatically located at the predetermined support position.

[0059] Please continue to refer to Figure 11 and 12 , Figure 11 is Figure 3 an axial cross-sectional view of the reaction chamber device in, and the axis is the axis of the chamber; Figure 12 is Figure 11 a front view.

[0060] As Figure 11 shown, in this embodiment, the bottom wall 11 of the chamber of the reaction chamber device is provided with a first annular groove 11b, and the outer transfer device 2 can be arranged in the first annular groove 11b, so as to facilitate the fixing of the outer transfer device 2.

[0061] Specifically, the outer transfer device 2 includes an annular mounting seat 21 and an annular rotating shaft 22. The annular mounting seat 21 is provided with a second annular groove whose notch faces away from the bottom wall 11 of the chamber. The annular mounting seat 21 is hermetically arranged with the groove wall of the first annular groove 11b, and the annular mounting seat 21 remains stationary relative to the bottom wall 11 of the chamber. In addition, an annular rotating shaft 22 is arranged in the second annular groove of the annular mounting seat 21. A magnetic fluid is filled between the annular rotating shaft 22 and the second annular groove. The first support portion 23 is arranged on the annular rotating shaft 22, and the annular rotating shaft 22 can rotate in the second annular groove, thereby driving the first support portion 23 to rotate.

[0062] Specifically continue to refer to Figures 13 - 15 Understand, Figure 13 For Figure 12 The enlarged view of part A in; Figure 14 For Figure 11 The schematic diagram of the outer transfer device 2, the first rotation driving device and the first lifting driving device in; Figure 15 For Figure 12 The schematic diagram of the outer transfer device 2 in.

[0063] The annular rotating shaft 22 is driven by a first rotation driving device. Specifically, as shown in Figure 13 And 14 Shown, the reaction chamber device is also provided with a first transmission portion. Both the first transmission portion and the first rotation driving device are arranged below the bottom of the reaction chamber device. The first transmission portion is a gear 73 in this embodiment. Figure 15 In, a circle of teeth 221 is arranged along the circumference at the bottom of the annular rotating shaft 22. An opening 11c is provided at the bottom of the first annular groove 11b. A part of the gear 73 can pass through the opening 11c to mesh with the teeth 221 at the bottom of the annular rotating shaft 22. The first rotation driving device is specifically a first rotation motor 74. The first rotation motor 74 can drive the gear 73 to rotate. The gear 73 rotates and meshes with the teeth 221 of the annular rotating shaft 22 to drive the annular rotating shaft 22 to rotate. Taking Figure 13 As the perspective, the first rotation motor 74 and the gear 73 rotate around the horizontal axis, and the annular rotating shaft 22 rotates around the vertical axis.

[0064] With such a setting, by arranging the first rotation driving device and the first transmission part outside the chamber of the reaction chamber device, the rotation of the external transfer device 2 can be realized, and then the first support part 23 is driven to rotate. At this time, although an opening 11c is provided at the bottom of the first annular groove 11b, the annular mounting groove is hermetically connected to the groove wall of the first annular groove 11b, and the second annular groove and the annular rotating shaft 22 are filled with magnetic fluid, so the opening 11c cannot communicate the outside and the inside of the chamber, thus meeting the requirement of vacuum tightness. It can be seen that according to the driving requirements, more than one opening 11c can also be provided at the bottom of the first annular groove 11b, and the corresponding number of first rotation driving devices and first transmission parts are arranged. Here, the driving force of the first rotation motor 74 is transmitted to the bottom teeth 221 of the annular rotating shaft 22 through the gear 73. The transmission setting is relatively reliable, and it is easy to realize the rotation of the annular rotating shaft 22. Moreover, in this transmission method, the volume occupied by the first rotation drive is relatively small, and it is not easy to interfere with the arrangement of other components below the bottom wall 11 of the chamber. For example, it will not interfere with the arrangement of pipelines and the like below the bottom wall 11 of the chamber.

[0065] However, it can be understood that the driving method is not limited to this, as long as the rotation of the annular rotating shaft 22 can be realized. For example, the first rotation motor 74 drives the annular rotating shaft 22 to rotate coaxially. In addition, it is not limited to the gear 73 extending into the opening 11c to engage with the teeth 221. For example, the bottom of the annular rotating shaft 22 can also extend out of the opening 11c to engage with the teeth 221. However, at this time, magnetic fluid cannot be filled between the annular rotating shaft 22 and the annular mounting seat 21, and a dynamic sealing method can be used instead. However, it should be understood that magnetic fluid has good sealing performance, and the annular rotating shaft 22 and the annular mounting seat 21 form an annular magnetic fluid bearing at this time.

[0066] Furthermore, as Figure 13 shown, a first bellows 4 is provided between the annular mounting seat 21 and the bottom of the first annular groove 11b to achieve the effect of sealing with the groove wall of the first annular groove 11b. Since an opening 11c is provided at the bottom of the first annular groove 11b, two first bellows 4 are provided, and the two first bellows 4 are respectively located on both sides of the opening 11c in the radial direction, that is, inside and outside the opening 11c, so as to realize the lifting function of the external transfer device. The sealing between the transfer device and the reaction chamber is all carried out through sealing rings.

[0067] The reason for setting the first bellows 4 in this embodiment is that the reaction chamber device is also provided with a first lifting driving device, and the first lifting driving device drives the external transfer device 2 to lift, and the lifting is to move along the axial direction of the chamber. The first lifting driving device drives the external transfer device 2 to lift, then the support height of the first support part 23 can be adjusted to better transfer the wafer 100.

[0068] As Figure 13 、 14As shown, the first lifting drive device specifically includes a first lifting motor 72 and a transmission rod 76. The upper end of the transmission rod 76 can extend from the opening 11c of the first annular groove 11b to contact the bottom of the annular mounting seat 21 or the annular rotating shaft 22, thereby driving the outer conveying device 2 to rise and fall under the drive of the first lifting motor 72. Since the gear 73 as the first transmission part also needs to extend from the opening 11c to mesh with the annular rotating shaft 22, Figure 13 The transmission rods 76 are included, and the gear 73 is located between the two transmission rods 76. In this way, the structure is symmetrical and the force is evenly distributed. It can be seen that the arrangement of the transmission rods 76 and the gears 73 is not limited to this, as long as the two do not interfere with each other.

[0069] Figure 13 In the embodiment, the bottom wall 11 of the reaction chamber device is provided with a first rotating bracket 71, the side wall 12 of the annular chamber is provided with a first lifting bracket 75, the first rotating motor 74 is installed on the first rotating bracket 71, and the first lifting motor 72 is installed on the first lifting bracket 75, so that the installation of the two motors is more reliable and the work does not interfere with each other.

[0070] Correspondingly, the inner conveying device 3 is provided with a second rotating driving device and a second lifting driving device, please continue to refer to Figures 16 - 18 , Figure 16 for Figure 14 Schematic diagram of the inner conveying device 3 and the second rotating drive device and the second lifting drive device; Figure 17 for Figure 16 The main view; Figure 18 for Figure 12 Magnified view of area B.

[0071] The inner conveying device 3 is arranged in the middle of the bottom wall 11 of the reaction chamber device. The inner conveying device 3 includes a support frame 32. The support frame 32 has multiple legs extending outward from the middle. The end of each leg is provided with a second support portion 31. The second support portion 31 and the support frame 32 can be provided in one piece or in a separate piece. The rotation drive device includes a second rotating motor 51 and a magnetic fluid rotating shaft 54. The bottom wall 11 of the reaction chamber device is provided with a through hole 11a. One end of the magnetic fluid rotating shaft 54 ​​passes through the through hole 11a to connect with the inner conveying device 3. The second rotating motor 51 drives the magnetic fluid rotating shaft 54 ​​to rotate, so as to drive the inner conveying device 3 to rotate. The second rotating motor 51, the magnetic fluid rotating shaft 54, and the inner conveying device 3 rotate coaxially.

[0072] In order to ensure the sealing, the magnetic fluid shaft 54 ​​is provided with a radially extending annular flange, and a second bellows 6 is also provided between the annular flange and the bottom of the chamber bottom wall 11. The second bellows 6 surrounds the magnetic fluid shaft 54, and the second bellows 6 is also provided to take into account the requirements of sealing and lifting.

[0073] The reaction chamber device is provided with a second lifting drive device, which includes a second lifting motor 52 and a second transmission part. The second transmission part is used for driving the lifting. Figure 17 In it, the bottom wall 11 of the chamber is provided with a second rotating bracket and a second lifting bracket 53. The second rotating bracket is used to install the second rotating motor 51, and the second lifting bracket 53 is used to install the second lifting motor. The second transmission part is a transmission block, which can only move up and down and is threadedly connected to the output shaft of the second lifting motor 52. Then, when the second lifting motor 52 rotates, it can drive the lifting block 55 to lift. The lifting block 55 is connected to the magnetohydrodynamic rotating shaft 54, so it can drive the magnetohydrodynamic rotating shaft 54 to lift, thereby realizing the lifting drive of the inner transfer device 3. It should be known that the first support part 23 and the second support part 31 jointly support the wafer 100. Therefore, the inner transfer device 3 and the outer transfer device 2 need to rotate and lift synchronously. Therefore, the first rotation drive device and the second rotation drive device need to rotate synchronously, and the first lifting drive device and the second lifting drive device also need to lift synchronously.

[0074] Embodiment 2

[0075] Please refer to Figure 19 , Figure 19 which is a schematic diagram of the reaction chamber device in the second embodiment of the present application.

[0076] In the second embodiment, the reaction chamber device is provided with three concentrically arranged transfer devices, namely an inner transfer device 3, an intermediate transfer device 2', and an outer transfer device 2. The intermediate transfer device 2' is provided with a first support part 23 extending towards the inside and a second support part 31 extending towards the outside. The structures and arrangement manners of the first support part 23 and the second support part 31 are understood with reference to the first embodiment.

[0077] The second support part 31 of the inner transfer device 3 and the first support part 23 of the intermediate transfer device 2' form a support position. The second support part 31 of the intermediate transfer device 2' and the first support part 23 of the outer transfer device 2 form a support position, that is, the intermediate transfer device 2' cooperates with the inner and outer two transfer devices to support. A group of circumferentially distributed heating plates 13 are located between the inner transfer device 3 and the intermediate transfer device 2', and another group of circumferentially distributed heating plates 13 are located between the intermediate transfer device 2' and the outer transfer device 2. The structures of the intermediate transfer device 2' and the outer transfer device 2 in this embodiment can be completely the same as those of the outer transfer device 2 in the first embodiment. The cooperation manner of the support parts is also understood with reference to the first embodiment, and will not be elaborated here.

[0078] At this time, when transferring the wafer 100, the wafer 100 can be first transferred to the position of a set of heating plates 13 on the inner side. After each support position of the inner transfer device 3 and the intermediate transfer device 2' supports the wafer 100, then the ejector pins of the heating plate 13 extend to support the wafer 100, and then the support parts at this support position can rotate away from the position of the heating plate 13, and the ejector pins can drive the wafer 100 to drop onto the heating plate 16. At this time, the first support part 23 of the intermediate transfer device 2' no longer supports the wafer 100, and the intermediate transfer device 2' can rotate freely. The second support part 31 of the intermediate transfer device 2' can rotate synchronously with the first support part 23 of the outer support device 2 to transfer the wafer 100 to the heating plate 13 located on the outer side. When the wafer 100 drops below the height of each support part, it does not interfere with the rotation of the intermediate transfer device 2'. If the wafer drops above the lowest point of each support part, the interference can be eliminated by raising the heating plate 13.

[0079] Of course, the intermediate transfer device 2' can also include two concentric support units. The support units have the same structure as the outer transfer device 2 in the first embodiment. One support unit cooperates with the inner transfer device 3, and the other cooperates with the outer transfer device 2. In this way, the two support units of the intermediate transfer device 2' can rotate independently of each other without interference, which is equivalent to setting up two sets of inner and outer transfer devices 2.

[0080] In this article, specific examples are used to elaborate on the principle and implementation manner of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. It should be noted that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the protection scope of the claims of the present invention.

Claims

1. A reaction chamber device, in which a processing position for processing a workpiece to be processed is provided in the chamber, characterized in that, The reaction chamber device further includes at least two concentrically arranged transfer devices. Each transfer device is provided with a plurality of support parts. The support parts of the transfer device located on the outer side have a radial distance from the support parts of the transfer device located on the inner side. The support parts supporting the workpiece to be processed do not need to be located above the entire processing position, or only the end part is located above the processing position. The processing positions are distributed between two adjacent transfer devices. Among two adjacent transfer devices, at least one support part of the transfer device located on the outer side and at least one support part of the transfer device located on the inner side form a support position for supporting the workpiece to be processed, and the support parts of all the transfer devices can rotate concentrically.

2. The reaction chamber device according to claim 1, wherein The shown support position includes three support parts, two of which are located on the outer side and the other is located on the inner side.

3. The reaction chamber device according to claim 1, characterized in that, The support part is provided with a stepped part. The stepped surface of the stepped part is used for supporting the workpiece to be processed, and the stepped side wall of the stepped part is a guiding inclined surface.

4. The reaction chamber device according to claim 1, characterized in that, The reaction chamber device includes three or more transfer devices. The transfer device located between two transfer devices includes a group of support parts located on the inner side for cooperating with the inner transfer device to form a support position, and support parts located on the outer side for cooperating with the outer transfer device to form a support position. The support parts located on the inner side and the support parts located on the outer side can rotate synchronously or independently.

5. The reaction chamber device according to any one of claims 1-4, characterized in that, The bottom wall of the chamber of the reaction chamber device is provided with a first annular groove. The transfer device located on the innermost side is arranged in the middle of the bottom wall of the chamber, and the other transfer devices are installed in the corresponding first annular grooves.

6. The reaction chamber device according to claim 5, wherein, The transfer device arranged in the first annular groove includes an annular mounting seat. The annular mounting seat is provided with a second annular groove with an opening facing away from the bottom wall of the chamber. The annular mounting seat is hermetically connected to the first annular groove. An annular rotating shaft is arranged in the second annular groove. A magnetic fluid is filled between the annular rotating shaft and the second annular groove. The support part is arranged on the annular rotating shaft. It further includes a first rotation driving device for rotating the annular rotating shaft.

7. The reaction chamber device according to claim 6, characterized in that, It further includes a first transmission part. The bottom of the first annular groove is provided with an opening. Either the first transmission part or the annular rotating shaft can pass through the opening to establish their connection. The first rotation driving device drives the first transmission part to rotate to drive the annular rotating shaft to rotate.

8. The reaction chamber device according to claim 7, wherein, The first transmission part is a gear, and teeth capable of meshing with the gear are arranged along the circumferential direction at the bottom of the annular rotating shaft.

9. The reaction chamber device according to claim 7, characterized in that First bellows are arranged on both radial sides of the opening, and the first bellows are located between the bottom of the annular mounting seat and the bottom of the first annular groove. The annular mounting seat is hermetically connected to the first annular groove through the first bellows. It further includes a lifting driving device and a second transmission part. Either the second transmission part or the annular mounting seat passes through the opening to establish their connection. The lifting driving device drives the second transmission part to lift to drive the annular mounting seat to lift.

10. The reaction chamber device according to claim 9, characterized in that, The first transmission part is a gear, and teeth capable of meshing with the gear are arranged along the circumferential direction at the bottom of the annular rotating shaft; The second transmission part includes transmission rods respectively arranged on two radial sides of the opening, and the gear is located between the two transmission rods.

11. The reaction chamber device according to claim 5, characterized in that, The reaction chamber device is provided with a second rotation driving device and a magnetic fluid bearing for driving the innermost conveyor to rotate; a through hole is provided in the middle of the bottom wall of the chamber, and the magnetic fluid bearing passes through the through hole to connect the innermost conveyor, and the second rotation driving device drives the magnetic fluid bearing to rotate so as to drive the conveyor connected to the magnetic fluid bearing to rotate.

12. The reaction chamber device according to any one of claims 1-4, characterized in that, The workpiece to be processed is a wafer, and a plurality of heating plates are arranged on the bottom wall of the chamber of the reaction chamber device, and the heating plates form the processing positions.

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