A fan-out LED packaging structure and packaging method thereof

Through the fan-out LED packaging structure, the problem of large package size and low resolution in traditional LED packaging methods is solved, and a higher display resolution is achieved.

CN114203882BActive Publication Date: 2025-05-13SJ SEMICONDUCTOR (JIANGYIN) CORP
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Patent Information

Application Number
CN202010986599.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2020-09-18
Publication Date
2025-05-13
Estimated Expiration
2040-09-18

AI Technical Summary

Technical Problem

Traditional LED packaging methods lead to larger package sizes and thicker thicknesses, limiting the improvement of the resolution of LED displays.

Method used

The fan-out LED packaging structure is adopted, and the substrate is replaced by metal plating, and the PI dielectric layer and RDL layer wiring is used to replace the electrical connection between the LED chip and the IC control chip module.

Benefits of technology

It effectively reduces the package size of LEDs, improves the display resolution, and overcomes the problems of large size and thick thickness in traditional packaging methods.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention provides a fan-out LED packaging structure and a packaging method thereof, wherein the fan-out LED packaging structure at least comprises: an LED chip, a packaging layer, a first redistribution layer, an IC control chip module, and a second redistribution layer. The LED chip and the IC control chip module realize electrical lead-out and control of the LED chip and the IC control chip through metal wiring of the first and second redistribution layers and metal-plated perforations of the packaging layer. The present invention also provides a packaging method for a fan-out LED packaging structure, which uses a fan-out packaging method, adopts metal plating to replace welding wires, and adopts a PI dielectric layer and RDL layer wiring method to replace the substrate, thereby effectively reducing the packaging size of the LED.
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Description

Technical Field

[0001] The invention belongs to the field of LED packaging, and in particular relates to a fan-out type LED packaging structure and a packaging method thereof. Background Art

[0002] In the display field, especially for outdoor large-screen displays, there are usually two methods: LCD and RBGLED. Traditional LCD has the advantage of higher resolution, but multiple LCD panels will have large gaps when spliced ​​together, affecting the visual effect; for electronic screens, RBGLED has better color display and no splicing gap interference, but the size of traditional LED packages is large, and considering the heat dissipation requirements, the spacing between the packages is large and the density is low, resulting in the defect of lower resolution.

[0003] The key to improving the resolution of LED display screens is to reduce the package size. Traditional LED packaging methods include dot matrix modules, direct plug-in, COB, etc. Since traditional packaging methods use wire bonding technology and substrates, the package size is large and thick. Reducing the package size is the key to improving the market competitiveness of LED display screens, and it is also a technical difficulty faced by this field. Summary of the invention

[0004] In the traditional LED packaging method, the LED chip and the IC control chip module are respectively solid-die-bonded on both sides of the substrate, and the electrical performance is introduced to the substrate through the LED chip bonding wire, and the circuit connection inside the substrate communicates with the IC chip module to realize the circuit control of the LED. The disadvantage of this traditional packaging structure is that the packaging size is larger and thicker due to the use of the substrate and the outer welding wire, which is not conducive to the improvement of display resolution.

[0005] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a fan-out LED packaging structure and a packaging method thereof, so as to solve the problem that the LED packaging in the prior art is large in size and thick in thickness.

[0006] To achieve the above-mentioned purpose and other related purposes, the present invention provides a fan-out LED packaging structure, which at least includes: an LED chip, including a first surface and a second surface, and an electrode is plated on the first surface; a packaging layer, covering the side surface and the first surface of the LED chip; a first redistribution layer, including a PI medium and metal wiring in the PI medium, the first redistribution layer including a first surface and an opposite second surface, the LED chip is combined with the second surface of the redistribution layer, and the electrode on the first surface of the LED chip is connected to the metal wiring of the first redistribution layer through a perforated metal-plated electrode located in the packaging layer; an IC control chip module, including an IC control chip, a metal bump, and a conductive pad. Thermal glue and heat sink, the IC control chip includes a first surface and an opposite second surface, the first surface has an electrode, the metal bump is formed on the electrode of the first surface, the thermal glue and the heat sink are located on the second surface in sequence, the IC control chip module is mounted on the second surface of the first redistribution layer through the metal bump, so as to realize the electrical connection between the LED chip and the IC control chip module through the first redistribution layer; the second redistribution layer includes a PI medium and metal wiring in the PI medium, which is formed in the direction of the second surface of the LED chip, and the metal wiring of the second redistribution layer is connected to the metal wiring of the first redistribution layer to realize the electrical lead-out and control of the LED chip and the IC control chip.

[0007] Optionally, the material of the encapsulation layer includes one of silica gel, polyimide and epoxy resin.

[0008] Optionally, the metal wiring includes one of copper, gold, and silver wiring, the metal electrode includes one of copper, gold, and silver electrode, and the metal bump includes one of tin solder, silver solder, and gold-tin alloy solder.

[0009] The present invention also provides a packaging method for a fan-out type LED packaging structure, the packaging method comprising the steps of: 1) providing a supporting substrate; 2) forming a separation layer on the supporting substrate; 3) providing an LED chip, comprising a first surface and a second surface, wherein an electrode is plated on the first surface, the second surface of the LED chip is fixed to the separation layer, and the first surface electrode of the LED wafer faces away from the separation layer; 4) the packaging layer packages the LED chip, so that the first surface and the surrounding of the LED chip are wrapped by the packaging layer, and the packaging layer around the LED chip is in contact with the separation layer; 5) punching a hole in the packaging layer on one side of the first surface of the LED chip, so that the surface is exposed at a specific position on the first surface of the LED chip and on the separation layer; 6) electroplating a metal electrode, so that the surface of the packaging layer, the exposed position of the first surface of the LED chip, and the exposed position on the separation layer are metal-connected; 7) punching a hole in the packaging layer on one side of the first surface of the LED chip, so that the surface is exposed at a specific position on the first surface of the LED chip and on the separation layer; A first rewiring layer is formed on the side packaging layer, the first rewiring layer includes a first graphic PI layer and a first graphic metal wiring in alternating layers, the first PI layer and the first metal wiring layer are alternately stacked, the first PI layer simultaneously fills the holes at the punching positions of the packaging layer, and the first metal wiring is connected to the metal electrode exposed by the packaging layer; 8) based on the separation layer, the supporting substrate and the packaged LED chip are peeled off; the packaging layer, the metal electrode at the drilling position of the packaging layer, and the second surface of the LED chip are exposed; 9) a second rewiring layer is formed on one side of the second surface of the LED chip, including a second PI medium and metal wiring in the second PI medium, the metal wiring of the second rewiring layer is connected to the metal wiring of the first rewiring layer, and is used for the lead-out of the LED chip and the metal electrode; 10) an IC control module with a heat sink is surface mounted on the first rewiring layer.

[0010] Optionally, the method of encapsulating the LED chip with the encapsulation layer includes one of compression molding, transfer molding, liquid sealing molding, vacuum lamination and spin coating.

[0011] Optionally, the separation layer includes a light-to-heat conversion layer.

[0012] Optionally, the supporting substrate includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate.

[0013] Optionally, the step 7) includes: 7-1) placing a PI dry film with a release film on the packaging layer on one side of the first surface of the LED chip; 7-2) vacuum hot pressing to make the PI film adhere to the packaging layer and pour it into the holes at the punching positions, and peel off the release film; 7-3) after exposure and development, the metal at a specific position on the surface of the packaging layer is exposed.

[0014] The present invention also provides a fan-out packaging structure, which at least includes: an IC control chip module, the IC control chip module includes an IC control chip, the IC control chip includes a first surface and a second surface, an electrode is provided on the first surface, a copper lead column is formed on the electrode, a PI medium packaging electrode and a metal lead column are provided on the first surface, and the top layer of the metal lead column is exposed; a first packaging layer, covering the four sides of the IC control chip module; a thermal conductive adhesive and a heat sink are sequentially mounted on the second surface of the IC control chip; a first redistribution layer, including a PI medium and metal wiring in the PI medium, the first redistribution layer includes a first surface and an opposite second surface; the metal wiring passes through the first surface and the second surface, there is a metal wiring on the surface of the second surface, and a high copper column is formed on the metal wiring on the surface of the second surface, the IC control chip module is tightly attached to the first surface of the first redistribution layer, and the metal lead column of the IC control chip module is connected to the through metal wiring exposed on the first surface of the first redistribution layer; an LED chip module, the LED chip module includes The invention discloses an LED chip, wherein the LED chip comprises a first surface and a second surface, wherein electrodes are arranged on the first surface, and PI dielectric packaging electrodes and metal lead posts are arranged on the second surface, and the top layer of the metal lead posts is exposed; the second packaging layer covers the four sides of the LED chip module and the four sides of the high copper posts; the first surface of the LED chip is closely attached to the second surface of the first redistribution layer, and the electrodes on the first surface of the LED chip are connected with the through wiring exposed on the second surface of the first redistribution layer, and are connected with the IC control chip module through the through metal wiring; the electrodes on the first surface of the LED chip are not connected with the metal wiring on the second surface of the first redistribution layer; the second redistribution layer comprises PI dielectric and metal wiring in the PI dielectric, and the second redistribution layer is formed on one side of the second surface of the LED chip, and its metal wiring connects the metal lead posts on the second surface of the LED chip and the high copper posts in the second packaging layer, and realizes the electrical lead-out of the IC chip module through the high copper posts and the through metal wiring of the first redistribution layer; the metal wiring on the surface of the second redistribution layer is used for SMD surface mounting.

[0015] The present invention also provides a packaging method for a fan-out LED packaging structure, the packaging method comprising the following steps: 1) providing a supporting substrate; 2) forming a separation layer on the supporting substrate; 3) providing an IC control chip module, comprising an IC control chip, the IC control chip comprising a first surface and a second surface, the first surface having packaged electrodes and metal lead posts, the second surface of the IC control chip being solid-crystal bonded to the separation layer, the first surface electrode of the IC control chip facing away from the separation layer; 4) packaging the IC control chip module with a first packaging layer, so that the IC control chip module is surrounded by the first packaging layer and the surface facing away from the separation layer, and the first packaging layer around the IC control chip module is in contact with the separation layer; 5) grinding the first packaging layer on the first surface of the IC control chip to expose the metal lead posts on the first surface of the IC control chip module; 6) forming a first rewiring layer on the grinding surface of step 5), the first rewiring layer comprising an alternating layer of a patterned first PI layer and a patterned first metal wiring, the first metal wiring being connected to the metal lead posts on the first surface of the IC control chip module; 7) forming a high copper column at a specific position of the metal wiring of the first rewiring layer to realize the IC control chip module Electrical lead-out; 8) providing an LED chip module, including an LED chip, the LED chip including a first surface and a second surface, the first surface having an electrode, the second surface having a packaged metal lead column, the first surface of the LED chip is solid-chipped to the first redistribution layer, the first surface having an electrode connected to the metal wiring of the first redistribution layer, the metal lead column on the second surface of the LED chip facing away from the first redistribution layer; 9) using a second packaging layer to package the first redistribution layer, the LED chip module and the high copper column; 10) grinding the second packaging layer so that the metal lead column on the first surface of the LED chip and the first redistribution layer are The high copper pillars on the wiring layer are exposed; 11) forming a second redistribution layer on the grinding surface of step 10), the second redistribution layer includes a second PI layer of alternating layers and a second patterned metal wiring, the second metal wiring is connected to the metal lead pillars on the first surface of the LED chip and the top surface of the high copper pillars on the first redistribution layer; 12) peeling off the supporting substrate based on the separation layer; exposing the second surface of the IC control chip; 13) coating thermal conductive adhesive on the second surface of the IC control chip; 14) mounting a heat sink on the thermal conductive adhesive; 15) cutting the chip to obtain the final fan-out LED packaging structure.

[0016] As described above, a fan-out LED packaging structure and packaging process thereof of the present invention have the following beneficial effects: using a fan-out packaging method, using metal plating to replace welding wires, and using PI dielectric layer and RDL layer wiring to replace the substrate, effectively reducing the packaging size of the LED. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A schematic diagram of a packaging structure in the prior art is shown.

[0018] Figures 2 to 16 It is a schematic diagram of a packaging method of a fan-out LED packaging structure of the present invention, wherein: Fig.16 Shown is a schematic diagram of a fan-out LED packaging structure of the present invention.

[0019] Figures 17 to 32 It is a schematic diagram of a packaging method of a fan-out LED packaging structure of the present invention, wherein: Fig.32 Shown is a schematic diagram of a fan-out LED packaging structure of the present invention.

[0020] Component number description

[0021] 100 Support substrate

[0022] 200 Separation Layer

[0023] 301 LED Chip

[0024] 302 Encapsulation Layer

[0025] 303 Metal Lead Post

[0026] 304 Metal Electrode

[0027] 305 PI medium

[0028] 306 welding wire

[0029] 307 Jointing Glue

[0030] 401 The first redistribution layer PI medium

[0031] 402 First redistribution layer metal wiring

[0032] 403 Release film

[0033] 501 PI medium

[0034] 601 The first redistribution layer PI medium

[0035] 602 First redistribution layer metal wiring

[0036] 701 IC control chip

[0037] 702 Thermal Conductive Adhesive

[0038] 703 Heat sink

[0039] 704 metal bumps

[0040] 705 Metal Lead Post

[0041] 706 PI medium

[0042] 707 First packaging layer

[0043] 801 High Copper Column

[0044] 900 substrate DETAILED DESCRIPTION

[0045] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0046] For example, when describing the embodiments of the present invention in detail, for the sake of convenience, the cross-sectional diagrams showing the device structure will not be partially enlarged according to the general scale, and the schematic diagrams are only examples, which should not limit the scope of protection of the present invention. In addition, in actual production, the three-dimensional dimensions of length, width and depth should be included.

[0047] For ease of description, spatially relative terms such as "under", "below", "below", "below", "above", "on", etc. may be used herein to describe the relationship of one element or feature shown in the drawings to other elements or features. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the drawings. In addition, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

[0048] In the context of the present application, a structure in which a first feature is described as being "above" a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features are formed between the first and second features, such that the first and second features may not be in direct contact.

[0049] See also Figures 1 to 32 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and therefore the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0050] The schematic diagram of the packaging structure in the prior art is as follows Figure 1As shown, the LED chip 301 is solidified on one side of the substrate 900 by bonding glue 307, and electrical properties are introduced to the substrate 900 by welding wire 306. The IC control chip 701 is solidified on the other side of the substrate 900, and is connected to the circuit inside the substrate 900 and connected to the LED chip 301 by metal bumps 704, so as to realize the circuit control of the LED. On the side of the IC control chip 701 facing away from the substrate 900, thermal conductive glue 702 and heat sink 703 are sequentially mounted. The disadvantage of the prior art is that the packaging structure uses a substrate and outer welding wires, resulting in a larger and thicker package size, which is not conducive to improving the display resolution.

[0051] Example 1

[0052] like Figures 2 to 16 As shown, this embodiment provides a packaging method for a fan-out LED packaging structure, the packaging method comprising the steps of:

[0053] like Figure 2 As shown, firstly, step 1) is performed to provide a supporting substrate 100; the supporting substrate includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate.

[0054] like Figure 3 As shown, step 2) is then performed to form a separation layer 200 on the support substrate; the separation layer includes a light-to-heat conversion layer, which is formed on the support substrate by a spin coating process and then solidified by a curing process. The light-to-heat conversion layer has stable properties and a smooth surface, and is easy to separate in the subsequent peeling process.

[0055] like Figure 4 As shown, then step 3) is performed to provide an LED wafer 301, including a first surface and a second surface, wherein an electrode is plated on the first surface, and the electrode can be a copper electrode, a gold electrode or a silver electrode. The second surface of the LED wafer is fixed to the separation layer 200, and the first surface electrode of the LED wafer faces away from the separation layer 200.

[0056] like Figure 5 As shown, step 4 is then performed, wherein the encapsulation layer 302 is used to encapsulate the LED chip 301, so that the first surface and the surrounding areas of the LED chip 301 are wrapped by the encapsulation layer, and the encapsulation layer 302 around the LED chip 301 is in contact with the separation layer 200; the material of the encapsulation layer includes one of silica gel, polyimide and epoxy resin, and the method of encapsulating the LED chip with the encapsulation layer includes one of compression molding, transfer molding, liquid sealing molding, vacuum lamination and spin coating.

[0057] like Figure 6As shown, step 5 is then performed to laser-drill holes in the packaging layer 302 on one side of the first surface of the LED chip 301 so that the surface is exposed at specific locations on the first surface of the LED chip 301 and on the separation layer 200 .

[0058] like Figure 7 As shown, step 6) is then performed to electroplate a metal electrode 304 so that the surface of the packaging layer 302, the exposed position of the first surface of the LED chip 301, and the exposed position on the separation layer 200 are connected by metal, and the metal electrode 304 includes one of copper, gold, and silver electrodes.

[0059] like Figures 8 to 10 As shown, then step 7) is performed to form a first PI layer 401 on the packaging layer on the first surface side of the LED chip 301, and fill the holes in the laser-punched positions of the packaging layer, and after exposure and development, the metal at a specific position on the surface of the packaging layer is exposed. Figure 8 As shown, a PI dry film 401 with a release film 403 is placed on the packaging layer 302 on one side of the first surface of the LED chip 301; Fig. 9 As shown, vacuum hot pressing is performed to make the PI film 401 adhere to the encapsulation layer 302, and the PI film 401 is poured into the holes at the laser drilling positions, and the release film 403 is peeled off; as shown Fig.10 As shown, after exposure and development, the metal at a specific position on the surface of the packaging layer 304 is exposed.

[0060] like Fig.11 As shown, step 8) is then performed, and a first metal wiring layer 402 is formed on the first PI layer 401 by using exposure, development, electroplating, and etching processes. The first PI layer 401 and the first metal wiring 402 are alternately stacked, and the first PI layer 401 and the first metal wiring 402 constitute a first redistribution layer. The first metal wiring 402 is connected to the metal electrode 304 exposed by the encapsulation layer 302, and the metal wiring 402 includes one of copper, gold, and silver wiring.

[0061] like Fig.12 As shown, step 9) is then performed to form a PI medium 501 on the first redistribution layer, and the metal wiring 402 on the first redistribution layer is exposed through exposure and development.

[0062] like Fig.13 As shown, then step 10) is performed to peel off the support substrate 100 and the packaged LED chip 301 based on the separation layer 200; exposing the packaging layer 302, the metal electrode 304 at the drilling position of the packaging layer, and the second surface of the LED chip 301;

[0063] like Figures 14-15As shown, step 11 is then performed to form a third redistribution layer on one side of the second surface of the LED chip, including a second PI medium 601 and a second metal wiring 602 in the second PI medium, the metal wiring 602 of the second redistribution layer is connected to the metal wiring 402 of the first redistribution layer, and is used for the lead-out of the LED chip 301 and the metal electrode 304.

[0064] like Fig.16 As shown, finally, step 12) is performed to mount an IC control module with a heat sink on the surface of the first rewiring layer.

[0065] like Fig.16 As shown, this embodiment also provides a packaging structure, including: an LED chip 301, including a first surface and a second surface, the first surface is plated with electrodes, and the metal electrodes include one of copper, gold, and silver electrodes; a packaging layer 302, covering the side surface and the first surface of the LED chip, and the material of the packaging layer includes one of silica gel, polyimide, and epoxy resin; a first redistribution layer, including a PI medium 401 and a metal wiring 402 in the PI medium, the metal wiring 402 includes one of copper, gold, and silver wiring, the first redistribution layer includes a first surface and an opposite second surface, the LED chip 301 is combined with the second surface of the redistribution layer, and the electrodes on the first surface of the LED chip 301 are connected to the metal wiring 402 of the first redistribution layer through a perforated metal-plated electrode 304 located in the packaging layer 302; An IC control chip module includes an IC control chip 701, a metal bump 704, a thermally conductive adhesive 702 and a heat sink 703. The IC control chip 701 includes a first surface and an opposite second surface. The first surface has an electrode. The metal bump 704 is formed on the electrode of the first surface. The metal bump includes tin solder, silver solder, and one of gold-tin alloy solder. The thermally conductive adhesive 702 and the heat sink 703 are sequentially located on the second surface. The IC control chip module is mounted on the second surface of the first rewiring layer through the metal bump 704 to achieve electrical connection between the LED chip and the IC control chip module through the metal wiring 402 of the first rewiring layer. The thermally conductive adhesive includes one of silicone-based thermally conductive adhesive, epoxy resin-based thermally conductive adhesive, polyurethane-based thermally conductive adhesive, and PI-based thermally conductive adhesive. The second redistribution layer, including the PI medium 601 and the metal wiring 602 in the PI medium, is formed on the second surface direction of the LED chip. The metal wiring 602 of the second redistribution layer is connected to the metal wiring 402 of the first redistribution layer to realize the electrical lead-out and control of the LED chip 301 and the IC control chip 701.

[0066] Example 2

[0067] like Figures 17 to 32 As shown, this embodiment also provides a packaging method for a fan-out LED packaging structure, the packaging method comprising the steps of:

[0068] like Fig.17 As shown, firstly, step 1) is performed to provide a supporting substrate 100, which can be one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate.

[0069] like Fig.18 As shown, step 2) is then performed to form a separation layer 200 on the support substrate. The separation layer includes a light-to-heat conversion layer, which is formed on the support substrate by a spin coating process and then solidified by a curing process.

[0070] like Fig.19 As shown, then step 3) is performed to provide an IC control chip module, including an IC control chip 701, wherein the IC control chip 701 includes a first surface and a second surface, and the first surface has electrodes packaged with a PI medium 706 and metal lead posts 705, and the second surface of the IC control chip 701 is solid-chip-bonded to the separation layer 200, and the first surface electrode of the IC control chip 701 faces away from the separation layer 200, and the metal electrode includes one of copper, gold, and silver electrodes.

[0071] like Fig. 20 As shown, step 4 is then performed, the first packaging layer 707 encapsulates the IC control chip module so that the four sides of the IC control chip module and the surface facing away from the separation layer are wrapped by the first packaging layer 707, and the first packaging layer 707 around the IC control chip module is in contact with the separation layer 200, and the material of the packaging layer includes one of silicone, polyimide and epoxy resin.

[0072] like Fig.21 As shown, step 5 is then performed to grind the first packaging layer 707 on the first surface of the IC control chip module so that the metal lead posts 705 on the first surface of the IC control chip module are exposed.

[0073] like Figures 22-23 As shown, step 6 is then performed to form a first redistribution layer on the grinding surface, wherein the first redistribution layer includes a first PI layer 401 patterned by exposure and development and a first metal wiring 402 patterned by exposure, development, electroplating, and etching processes, wherein the first metal wiring 402 is connected to a metal lead column 706 on the first surface of the IC control chip 701.

[0074] like Fig.24 As shown, step 7) is then performed to form a high copper column 801 at a specific position of the first redistribution layer metal wiring to achieve electrical lead-out of the IC control chip module. The high copper column can be formed by spot welding or reflow soldering.

[0075] like Fig.25 As shown, then proceed to step 8), provide an LED chip module, including an LED chip 301, the LED chip 301 includes a first surface and a second surface, the first surface has an electrode, the second surface has a metal lead column 303 encapsulated by a PI medium 305, the first surface of the LED chip 301 is solid-chip-bonded to the first redistribution layer, the electrode on the first surface is connected to the first redistribution layer metal wiring 402, and the second surface metal lead column 303 of the LED chip module faces away from the first redistribution layer.

[0076] like Fig.26 As shown, step 9 is then performed to encapsulate the first redistribution layer, the LED chip module and the tall copper pillar 801 using the second encapsulation layer 302 .

[0077] like Fig. 27 As shown, step 10 is then performed to grind the second packaging layer 302 so that the metal lead posts 303 on the first surface of the LED chip 301 and the tall copper posts 801 on the first redistribution layer are exposed.

[0078] like Figures 28-29 As shown, step 11 is then performed to form a second redistribution layer on the grinding surface, wherein the second redistribution layer includes a second PI layer 601 patterned by exposure and development and a second metal wiring 602 patterned by exposure, development, electroplating, and etching processes, wherein the second metal wiring 602 is connected to the metal lead column 303 on the first surface of the LED chip 301 and the top surface of the high copper column 801 on the first redistribution layer.

[0079] like Fig.30 As shown, step 12 is then performed to peel off the support substrate 100 based on the separation layer 200 to expose the second surface of the IC control wafer 701.

[0080] like Fig.31 As shown, then proceed to step 13), coating a thermal conductive adhesive 702 on the second surface of the IC control chip 701;

[0081] like Fig.32 As shown, step 14 is then performed to mount a heat sink 703 on the thermal conductive adhesive 702, and the final fan-out LED packaging structure is obtained after wafer cutting.

[0082] like Fig.32As shown, this embodiment provides a fan-out LED packaging structure, the packaging structure includes: an IC control chip module, the IC control chip module includes an IC control chip 701, the IC control chip 701 includes a first surface and a second surface, an electrode is provided on the first surface, a copper lead post 705 is formed on the electrode, a PI medium 706 is provided on the first surface to package the electrode and the metal lead post 705, and the top layer of the metal lead post 705 is exposed; a first packaging layer 707, covering the four sides of the IC control chip module; a thermal conductive adhesive 702 and a heat sink 703 are sequentially mounted on the second surface of the IC control chip 701, and the thermal conductive adhesive includes One of silicone-based thermal conductive adhesive, epoxy resin-based thermal conductive adhesive, polyurethane-based thermal conductive adhesive, and PI-based thermal conductive adhesive; a first redistribution layer, including a PI medium 401 and a metal wiring 402 in the PI medium, the first redistribution layer including a first surface and an opposite second surface; the metal wiring 402 runs through the first surface and the second surface, the metal wiring 402 is arranged on the surface of the second surface, and a high copper column 801 is formed on the metal wiring 402 on the surface of the second surface, the IC control chip module is closely attached to the first surface of the first redistribution layer, and the metal lead column 705 of the IC control chip module is connected to the through metal wiring 402 exposed on the first surface of the first redistribution layer; LED chip The LED chip module comprises an LED chip 301, wherein the LED chip 301 comprises a first surface and a second surface, wherein electrodes are arranged on the first surface, and a PI medium 305 is arranged on the second surface to encapsulate the electrodes and metal lead posts 303, and the top layer of the metal lead posts 303 is exposed; the second encapsulation layer covers the periphery of the LED chip module and the periphery of the high copper posts 801; the first surface of the LED chip 301 is closely attached to the second surface of the first redistribution layer, the electrodes on the first surface of the LED chip 301 are connected to the through wiring 402 exposed on the second surface of the first redistribution layer, and are connected to the IC control chip module through the through metal wiring 402. The LED chip 301 is connected to the block; the electrode on the first surface of the LED chip 301 is not connected to the metal wiring 402 on the second surface of the first redistribution layer; the second redistribution layer includes a PI medium 601 and a metal wiring 602 in the PI medium, and the second redistribution layer is formed on the second surface side of the LED chip 301, and its metal wiring 602 connects the metal lead column 305 on the second surface of the LED chip 301 and the high copper column 801 in the second packaging layer, and realizes the electrical lead-out of the IC chip module through the high copper column 801 and the through metal wiring 402 of the first redistribution layer; the metal wiring 602 on the surface of the second redistribution layer is used for SMD surface mounting.

[0083] In summary, the present invention uses a fan-out packaging method to package LEDs, uses metal plating to replace wire bonding, and uses a PI dielectric layer and RDL layer wiring method to replace the substrate, which effectively reduces the package size of the LED, thereby improving the display resolution. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has a high industrial utilization value.

[0084] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A fan-out LED packaging structure, characterized in that: The fan-out LED package structure at least includes: The LED chip comprises a first surface and a second surface, wherein the first surface is plated with electrodes; an encapsulation layer covering the side surface of the LED chip and the first surface, wherein the material of the encapsulation layer comprises one of silica gel, polyimide and epoxy resin; a first redistribution layer, comprising a PI dielectric and metal wiring in the PI dielectric, wherein the metal wiring comprises one of copper, gold, and silver wiring; the first redistribution layer comprises a first surface and an opposite second surface; the LED chip is bonded to the second surface of the redistribution layer; and electrodes on the first surface of the LED chip are connected to the metal wiring of the first redistribution layer via perforated metallized electrodes in the packaging layer; An IC control chip module, comprising an IC control chip, metal bumps, thermally conductive adhesive, and a heat sink, wherein the IC control chip comprises a first surface and an opposite second surface, wherein the first surface has electrodes, the metal bumps are formed on the electrodes of the first surface, the thermally conductive adhesive and the heat sink are sequentially located on the second surface, and the IC control chip module is mounted on the second surface of the first redistribution layer via the metal bumps, so as to achieve electrical connection between the LED chip and the IC control chip module via the first redistribution layer; The second redistribution layer includes a PI medium and metal wiring in the PI medium. The metal wiring includes one of copper, gold, and silver wiring, and is formed in the second surface direction of the LED chip. The metal wiring of the second redistribution layer is connected to the metal wiring of the first redistribution layer to realize electrical extraction and control of the LED chip and the IC control chip.

2. The fan-out LED package structure according to claim 1, wherein: The metal electrode includes one of copper, gold, and silver electrodes, and the metal bump includes one of tin solder, silver solder, and gold-tin alloy solder.

3. A packaging method for a fan-out LED packaging structure, characterized in that: The packaging method comprises the steps of: 1) providing a supporting substrate; 2) forming a separation layer on the supporting substrate; 3) Providing an LED wafer, comprising a first surface and a second surface, wherein an electrode is plated on the first surface, and fixing the second surface of the LED wafer to the separation layer, with the first surface electrode of the LED wafer facing away from the separation layer; 4) encapsulating the LED chip with the encapsulation layer so that the first surface and the periphery of the LED chip are wrapped by the encapsulation layer, and the encapsulation layer around the LED chip is in contact with the separation layer; 5) drilling holes in the encapsulation layer on one side of the first surface of the LED chip, so that the surface is exposed at specific locations on the first surface of the LED chip and on the separation layer; 6) Electroplating metal electrodes to connect the surface of the packaging layer, the exposed portion of the first surface of the LED chip, and the exposed portion of the separation layer; 7) forming a first redistribution layer on the packaging layer on one side of the first surface of the LED wafer, the first redistribution layer comprising alternating layers of patterned first PI layers and patterned first metal wirings, the first PI layers and the first metal wiring layers being alternately stacked, the first PI layers simultaneously filling holes punched in the packaging layer, and the first metal wirings being connected to the metal electrodes exposed in the packaging layer; 8) peeling off the supporting substrate and the packaged LED wafer based on the separation layer; exposing the packaging layer, the metal electrode at the drilling position of the packaging layer, and the second surface of the LED chip; 9) forming a second redistribution layer on one side of the second surface of the LED chip, including a second PI dielectric and metal wiring in the second PI dielectric, wherein the metal wiring of the second redistribution layer is connected to the metal wiring of the first redistribution layer for leading out the LED chip and the metal electrode; 10) Mounting an IC control module with a heat sink on the first redistribution layer.

4. The packaging method of a fan-out LED packaging structure according to claim 3, characterized in that: The method of encapsulating the LED chip in the encapsulation layer includes one of compression molding, transfer molding, liquid sealing molding, vacuum lamination and spin coating.

5. The packaging method of a fan-out LED packaging structure according to claim 3, wherein: The support substrate includes one of a glass substrate, a metal substrate, a semiconductor substrate, a polymer substrate, and a ceramic substrate.

6. The packaging method of a fan-out LED packaging structure according to claim 3, characterized in that: The separation layer includes a light-to-heat conversion layer.

7. The packaging method of a fan-out LED packaging structure according to claim 3, wherein: The step 7) comprises: 7-1) Placing a PI dry film with a release film on the encapsulation layer on one side of the first surface of the LED chip; 7-2) Vacuum hot pressing to adhere the PI film to the encapsulation layer and pour it into the holes at the punched positions, and then peel off the release film; 7-3) After exposure and development, the metal at a specific position on the surface of the packaging layer is exposed.

8. A fan-out LED packaging structure, characterized in that: The fan-out LED package structure at least includes: An IC control chip module, the IC control chip module including an IC control chip, the IC control chip including a first surface and a second surface, the first surface having an electrode, the electrode having a copper lead post formed thereon, the first surface having a PI dielectric package electrode and a metal lead post, with the top layer of the metal lead post exposed; The first packaging layer covers the four sides of the IC control chip module; A thermal conductive adhesive and a heat sink are sequentially mounted on the second surface of the IC control chip; the thermal conductive adhesive comprises one of silicone-based thermal conductive adhesive, epoxy resin-based thermal conductive adhesive, polyurethane-based thermal conductive adhesive, and PI-based thermal conductive adhesive; A first redistribution layer includes a PI dielectric and metal wiring in the PI dielectric, the first redistribution layer including a first surface and an opposing second surface; the metal wiring penetrates the first surface and the second surface, the metal wiring is formed on the surface of the second surface, and tall copper pillars are formed on the metal wiring on the surface of the second surface; the IC control chip module is closely attached to the first surface of the first redistribution layer, and the metal lead pillars of the IC control chip module are connected to the through-metal wiring exposed on the first surface of the first redistribution layer; An LED chip module, comprising an LED chip, wherein the LED chip comprises a first surface and a second surface, wherein electrodes are provided on the first surface, and PI dielectric encapsulated electrodes and metal lead posts are provided on the second surface, with the top layer of the metal lead posts exposed; The second packaging layer covers the periphery of the LED chip module and the periphery of the high copper pillar; The first surface of the LED chip is closely attached to the second surface of the first redistribution layer, the electrodes on the first surface of the LED chip are connected to the through wiring exposed on the second surface of the first redistribution layer, and are connected to the IC control chip module through the through metal wiring; the electrodes on the first surface of the LED chip are not connected to the metal wiring on the second surface of the first redistribution layer; The second redistribution layer includes a PI medium and metal wiring in the PI medium. The second redistribution layer is formed on one side of the second surface of the LED chip. Its metal wiring connects the metal lead columns on the second surface of the LED chip and the high copper columns in the second packaging layer, and realizes the electrical lead-out of the IC chip module through the high copper columns and the penetrating metal wiring of the first redistribution layer; the metal wiring on the surface of the second redistribution layer is used for SMD surface mounting.

9. A packaging method for a fan-out LED packaging structure, characterized in that: The packaging method comprises the steps of: 1) providing a supporting substrate; 2) forming a separation layer on the supporting substrate; 3) Providing an IC control chip module, including an IC control chip, the IC control chip including a first surface and a second surface, the first surface having packaged electrodes and metal lead posts, and die-bonding the second surface of the IC control chip to the separation layer, with the electrodes on the first surface of the IC control chip facing away from the separation layer; 4) encapsulating the IC control chip module with a first encapsulation layer, so that the IC control chip module is surrounded by the first encapsulation layer and the surface facing away from the separation layer, and the first encapsulation layer around the IC control chip module is in contact with the separation layer; 5) Grinding the first packaging layer on the first surface of the IC control chip to expose the metal lead posts on the first surface of the IC control chip module; 6) forming a first redistribution layer on the ground surface of step 5), wherein the first redistribution layer comprises alternating layers of patterned first PI layers and patterned first metal wirings, wherein the first metal wirings are connected to metal lead posts on the first surface of the IC control wafer module; 7) forming high copper pillars at specific locations of the metal wiring of the first redistribution layer to electrically lead out the IC control chip module; 8) Providing an LED chip module, comprising an LED chip, the LED chip comprising a first surface and a second surface, the first surface having electrodes and the second surface having packaged metal lead posts, die-bonding the first surface of the LED chip to the first redistribution layer, the first surface having electrodes connected to the metal wiring of the first redistribution layer, and the metal lead posts on the second surface of the LED chip facing away from the first redistribution layer; 9) Using a second packaging layer to encapsulate the first redistribution layer, the LED chip module, and the tall copper pillars; 10) Grinding the second packaging layer to expose the metal lead posts on the first surface of the LED wafer and the tall copper posts on the first redistribution layer; 11) forming a second redistribution layer on the ground surface of step 10), wherein the second redistribution layer comprises alternating layers of patterned second PI layers and patterned second metal wirings, wherein the second metal wirings are connected to the metal lead posts on the first surface of the LED wafer and the top surface of the tall copper posts on the first redistribution layer; 12) peeling off the supporting substrate based on the separation layer to expose the second surface of the IC control wafer; 13) applying thermal conductive adhesive on the second surface of the IC control chip; 14) mounting a heat sink on the thermally conductive adhesive; 15) The wafer is cut to obtain the final fan-out LED packaging structure.

Citation Information

Patent Citations

  • Fan-out type LED packaging structure

    CN213366617U