RF chips, signal transceivers and communication equipment

Abstract

The present application provides a radio frequency chip signal transceiver and communication equipment, which includes: a chip body; a coupling structure, including: a resonator, forming a resonant cavity, the inner wall of the resonant cavity being made of metal; a redistribution layer, arranged above the resonant cavity, including an RDL dielectric layer; a radiator, made of metal, formed into a centrally symmetrical shape, arranged on the surface of the dielectric layer facing the resonant body, and accommodated in the resonant cavity; a feed line, one end of which is connected to the chip body and the other end is inserted into the resonant cavity; a packaging structure, used to package the chip body and cover the redistribution layer, so that the signal generated by the chip body can be efficiently coupled to the polymer transmission line. Since the above structure is packaged in the chip, it can reduce the insertion loss caused by the connection between the chip and the coupling structure, thereby improving the coupling efficiency, and can improve the integration of the chip and the coupling structure, facilitating large-scale processing.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of communications, and more specifically, to a radio frequency chip, a signal transceiver, and a communication device. Background Art

[0002] With the development of information technology, the requirements for transmission speeds between devices are becoming increasingly higher. For example, a large number of high-speed cables are required between and within data center cabinets to achieve high-speed data transmission. Currently, high-speed cables mainly include active optical cables and direct-attach copper cables. When using active optical cables, electrical signals need to be converted into optical signals, and vice versa. The optical transceivers at both ends of the active optical cables need to provide optical-to-electrical conversion and optical transmission functions, which consumes a lot of power and is relatively high in cost. When using direct-attach copper cables, there is no need for electrical-to-optical or optical-to-electrical conversion processes, and electrical signals are directly transmitted, resulting in lower power consumption and cost. However, as the operating frequency increases, the metal loss of direct-attach copper cables increases, which limits the transmission distance and speed of direct-attach copper cables. In addition, copper cables are heavy and have a large bending radius, which is not conducive to their application in scenarios with dense wiring.

[0003] To address this issue, we have developed terahertz active cable technology, which uses terahertz waves as carrier waves and polymer transmission lines as the transmission medium. Compared to direct-connect copper cables and optical fibers, polymer transmission lines have the advantages of low loss, light weight, and low cost.

[0004] However, how to couple the terahertz signal (or terahertz modulated signal) output by the chip into the polymer transmission line is a key issue. Summary of the Invention

[0005] The present application provides a radio frequency chip, a signal transceiver, and a communication device, which can integrate a coupling structure for coupling a signal to a polymer transmission cable into the chip to improve coupling efficiency.

[0006] In a first aspect, a radio frequency chip is provided, comprising: a chip body 200 for generating or processing electromagnetic signals; a coupling structure 100, comprising: a resonator 110, formed with a resonant cavity 112 and a groove 114, the inner wall of the resonant cavity 112 being made of metal, one end of the resonant cavity 112 opening at the top surface 1102 of the resonator 110, the other end of the resonant cavity 112 being closed by a metal material, the cross-section of the resonant cavity 112 being formed into a centrally symmetrical shape, the groove 114 connecting the outer wall of the resonator 110 with the inner wall of the resonant cavity 112; a redistribution layer RDL 120, arranged above the top surface 1122, comprising an RDL dielectric layer 124; a radiator 130, made of metal and formed into a centrally symmetrical shape, arranged on the surface of the RDL dielectric layer 124 facing the resonator 110, and housed in the resonant cavity. The resonant cavity 112 is provided with a feeding line 140, which is accommodated in the groove 114, has one end connected to the chip 200, and the other end inserted into the resonant cavity 112; a packaging structure 300, which is used to encapsulate the chip body 200 and cover the redistribution layer RDL120, wherein a through hole 310 is formed on the packaging structure 300 for accommodating the metal connector, wherein one end of the metal connector abuts against the surface of the RDL120 facing away from the resonant body 110, and the other end of the metal connector is used to connect a polymer transmission cable, and the cross-section of the through hole 310 is formed into a centrally symmetrical shape; wherein the symmetry center of the radiator 130, the symmetry center of the resonant cavity 112, and the symmetry center of the through hole 310 are coaxially arranged, and the deviation of the cross-sectional dimensions between the through hole 310 and the resonant cavity 112 is within a first preset range.

[0007] According to the solution provided in the present application, by designing a centrally symmetrical radiator on the redistribution layer of the chip and providing a through hole for embedding a metal connector on the chip packaging structure, the signal generated by the chip body can be efficiently coupled to the polymer transmission line. Since the above structure is encapsulated in the chip, the insertion loss caused by the connection between the chip and the coupling structure can be reduced, thereby improving the coupling efficiency. In addition, the integration of the chip and the coupling structure can be improved, which is convenient for large-scale processing.

[0008] The electromagnetic signal includes a terahertz (THz) signal, or may also be called a THz modulation signal.

[0009] “The radiator 130 is formed into a centrosymmetrical shape” may be understood as the radiator 130 including a plurality of resonant arms, which are arranged centrosymmetrically.

[0010] Central symmetry means that if a figure is rotated 180° around a certain point and it can coincide with another figure, then the two figures are said to be symmetrical or centrally symmetric about this point.

[0011] In the present application, the groove 114 may be provided on a side wall of the resonator 110 , and the groove 114 may pass through a portion or the entirety of the side wall in a height direction, which is not particularly limited in the present application.

[0012] In the present application, the redistribution layer RDL 120 may further include an RDL metal bottom layer and an RDL metal top layer, and the RDL dielectric layer 124 is located between the RDL metal bottom layer and the RDL metal top layer.

[0013] Furthermore, the RDL metal bottom layer 122 and the RDL metal top layer 126 are configured, wherein the RDL metal bottom layer 122 is configured on the top surface 1122 of the resonator 110, and is provided with a hole 1221 on the RDL metal bottom layer 122, the size of which corresponds to the cross-sectional size of the resonant cavity 112, and the RDL metal top layer 126 is provided with a hole 1226, the size of which corresponds to the cross-sectional size of the resonant cavity 112. The symmetry center of the hole 1226, the symmetry center of the hole 1221, the symmetry center of the radiator 130, the symmetry center of the resonant cavity 112, and the symmetry center of the through hole 310 are coaxially arranged.

[0014] In the present application, the deviation of the depth of the resonant cavity 112 from a first value is within a second preset range, and the first value is one quarter of the wavelength of the electromagnetic signal.

[0015] In the present application, the feeding line 140 is inserted into the resonant cavity 112 along a first direction, and the length L1 of the first portion of the feeding line 140 inserted into the resonant cavity 112 is determined based on the length L2 of the radiator 130 in the first direction and the length L3 of the resonant cavity 112 in the first direction.

[0016] Alternatively, the L2 is determined based on the L1 and the L3.

[0017] Alternatively, the L3 is determined based on the L1 and the L2.

[0018] The length L1, the length L2 and the length L3 satisfy the following relationship: L1+0.5×L2<0.5×L3.

[0019] In one implementation, the resonator 100 is made of waveguide material.

[0020] In this case, a metal covering layer is disposed on the inner wall of the resonant cavity.

[0021] In the present application, the operating frequency f of the waveguide material corresponds to the cross-sectional diameter D1 of the metal connector.

[0022] For example, the operating frequency f and the cross-sectional diameter D1 satisfy the following relationship: f≥1.841c / 2×π×D1.

[0023] Here, c represents the speed of light.

[0024] In the present application, the depth of the resonant cavity 112 is greater than or equal to the sum of a second value and a third value, wherein the second value is the depth of a recessed structure in a printed circuit board (PCB) for accommodating the coupling structure 100, and the third value is the height of a solder ball in the PCB.

[0025] In one implementation, the cross-sections of the resonant cavity 112 and the metal connector are circular, and a deviation between the diameter of the resonant cavity and the diameter of the metal connector is within a third preset range.

[0026] As an example but not limitation, the radiator 130 is formed in one of a cross structure, a rice-shaped structure, an X-shaped structure, a U-shaped structure, and a field-shaped structure.

[0027] In one implementation, the resonant cavity 112 is specifically a semi-through hole formed on the resonant body 110 , wherein the inner wall and bottom surface of the semi-through hole are provided with a metal covering layer.

[0028] In another implementation, the resonant cavity 112 is specifically a through hole formed on the resonant body 110 .

[0029] In this case, a metal plate is provided on the bottom surface of the resonator 110 , and the metal plate closes the opening of the through hole on the bottom surface.

[0030] Alternatively, a metal plate is provided on the PCB for configuring the radio frequency chip, and the metal plate is used to close the opening of the through hole located on the bottom surface.

[0031] In a second aspect, a signal transceiver is provided, comprising the radio frequency chip of the first aspect and any possible implementation thereof; a printed circuit board PCB for configuring the radio frequency chip;

[0032] In one implementation, a recessed structure is provided on the PCB for accommodating the radio frequency chip.

[0033] Wherein, the recessed structure is a through hole

[0034] Alternatively, the recessed structure is a groove.

[0035] In another implementation, the signal transceiver further includes the metal connector.

[0036] In yet another implementation, the signal transceiver further includes the polymer transmission cable.

[0037] According to a third aspect, a communication device is provided, comprising the signal transceiver according to the second aspect and any possible implementation thereof.

[0038] In a fourth aspect, a communication cable is provided, comprising a polymer transmission cable; a radio frequency chip according to the first aspect and any possible implementation thereof; and a metal connector housed in a through hole 310 on a packaging structure 300 of the radio frequency chip, one end of the metal connector abutting against a surface of the RDL 120 facing away from the resonator 110, and the other end of the metal connector being used to connect the polymer transmission cable.

[0039] In a fifth aspect, a server is provided, each server comprising at least one signal transceiver according to the second aspect and any possible implementation thereof.

[0040] In a sixth aspect, a data processing system is provided, comprising a plurality of servers, each server comprising at least one signal transceiver according to the second aspect and any possible implementation thereof. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 This is a schematic structural diagram of an example of the radio frequency chip of the present application.

[0042] Figure 2 It is a three-dimensional exploded view of the radio frequency chip of this application.

[0043] Figure 3 This is a dimension diagram of the various components of the radio frequency chip of this application.

[0044] Figure 4 This is a schematic diagram of an example of a resonator of the present application.

[0045] Figure 5 It is a schematic diagram of another example of the resonator of the present application.

[0046] Figure 6 This is a schematic diagram of an example of a radiator of the present application.

[0047] Figure 7 It is a schematic diagram of another example of the structure of the radiator of the present application.

[0048] Figure 8 It is a schematic diagram of another example of the structure of the radiator of the present application.

[0049] Figure 9It is a schematic diagram of another example of the structure of the radiator of the present application.

[0050] Figure 10 It is a schematic diagram of another example of the structure of the radiator of the present application.

[0051] Figure 11 This is a schematic diagram of an example of how the radio frequency chip of the present application is configured on a PCB.

[0052] Figure 12 This is a schematic diagram of another example of how the radio frequency chip of the present application is configured on a PCB.

[0053] Figure 13 It is a schematic diagram of the relationship between the reflection parameters and frequency of the radio frequency chip of the present application.

[0054] Figure 14 It is a schematic diagram of the relationship between the transmission energy and frequency of the radio frequency chip of the present application.

[0055] Figure 15 It is a schematic diagram of the electric field distribution of the coupling structure of the present application.

[0056] Figure 16 This is a schematic diagram of an example of a signal transceiver applicable to the radio frequency chip of the present application.

[0057] Figure 17 This is a schematic structural diagram of an example of a data center cabinet that is suitable for the RF chip of the present application.

[0058] Figure 18 This is a schematic structural diagram of an example of a data center system that is applicable to the radio frequency chip of the present application. DETAILED DESCRIPTION

[0059] The technical solution in this application will be described below with reference to the accompanying drawings.

[0060] Figure 1 This is a schematic structural diagram of an example of the radio frequency chip of the present application, such as Figure 1 As shown, the radio frequency chip of the present application includes: a chip body 200 , a coupling structure 100 and a packaging structure 300 .

[0061] The chip body 200 is used to generate electromagnetic signals to be sent to the outside, and / or the chip body 200 is used to process electromagnetic signals from the outside.

[0062] By way of example and not limitation, the electromagnetic signal may include, but is not limited to, a terahertz (THz) signal.

[0063] THz signal, also called THz modulation signal, is a signal carried by terahertz waves.

[0064] Terahertz waves refer to electromagnetic waves with a frequency range of 0.1 to 10 THz (wavelength of 3000 to 30 μm). They coincide with millimeter waves in the long wave band and with infrared light in the short wave band. They are the transition zone from macroscopic classical theory to microscopic quantum theory, and also the transition zone from electronics to photonics. They are called the terahertz gap (THz gap) in the electromagnetic spectrum.

[0065] The process of the chip body 200 generating and processing electromagnetic signals may be similar to that in the prior art, and a detailed description thereof is omitted here to avoid redundancy.

[0066] The coupling structure 100 is used to couple the electromagnetic signal generated by the chip body 200 to the metal connector, and then transmit the electromagnetic signal to the external device through the polymer transmission cable connected to the metal connector.

[0067] Also, the coupling structure 100 is used to couple an electromagnetic signal input from an external device to the chip body 200 via the polymer transmission cable and the metal connector.

[0068] The polymer transmission cable is a solid core structure, and the material includes but is not limited to polytetrafluoroethylene. In addition, the end of the polymer transmission cable is formed into a tapered gradual structure so as to be inserted into the metal connector.

[0069] Furthermore, to ensure alignment between the polymer transmission cable and the metal connector, the polymer transmission cable and the metal connector are coaxially arranged, and the diameter Od of the polymer transmission cable and the diameter Cd of the metal connector satisfy the following relationship: Cd≤Od

[0070] It should be understood that the connection relationship between the metal connector and the polymer transmission line listed above is only an example, and the present application is not limited to this. In addition, the structure and material of the metal connector and the polymer transmission line can also be similar to the prior art, and the present application does not specifically limit it.

[0071] The packaging structure 300 is used to package the chip body 200 and the coupling structure 100 to form an integrated radio frequency chip.

[0072] Specifically, the package structure 300 covers the redistributed layer RDL 120 of the coupling structure 100 (this component will be described in detail later), and a through hole 310 is formed on the package structure 300 for accommodating the metal connector. The shape of the through hole 310 corresponds to the shape of the metal connector. For example, the through hole 310 (specifically, the cross-section of the through hole 310) is formed in a circular shape. Furthermore, the center of symmetry of the through hole 310 is coaxial with the center of symmetry of the metal connector. In other words, the axis of the through hole 310 is coaxial with the axis of the metal connector. Furthermore, the size of the through hole 310 corresponds to the size of the metal connector. For example, the diameter of the through hole 310 is the same as or approximately the same as the diameter of the metal connector.

[0073] The structure and configuration of the coupling structure 100 of the present application are described in detail below.

[0074] Figure 2 This is a three-dimensional exploded view of the radio frequency chip of this application, such as Figure 2 As shown, the coupling structure 100 includes a resonator 110 , a redistribution layer RDL 120 , a radiator 130 , and a feeding line 140 .

[0075] The structure and configuration of each of the above components are described in detail below.

[0076] A. Resonator 110

[0077] like Figures 2 to 5 As shown, a resonant cavity 112 and a slot 114 are formed on the resonator 110 .

[0078] The resonant cavity 112 has a centrally symmetrical shape.

[0079] Furthermore, the shape of the resonant cavity 112 corresponds to the shape of the metal connector.

[0080] For example, the resonant cavity 112 (specifically, the cross section of the resonant cavity 112 ) is formed in a circular shape.

[0081] Furthermore, the symmetry center of the resonant cavity 112 is coaxial with the symmetry center of the metal connector.

[0082] In other words, the axis of the resonant cavity 112 is coaxial with the axis of the metal connector.

[0083] Furthermore, the size of the resonant cavity 112 corresponds to the size of the metal connector.

[0084] In the present application, the sidewalls of the resonant cavity 112 are covered with a metal material (eg, by electroplating, vapor deposition, or sputtering).

[0085] The side wall of the resonant cavity 112 may also be referred to as the inner wall of the resonant cavity 112 or the inner wall of the resonant body 110 .

[0086] In the present application, the resonant cavity 112 includes an open end and a closed end, and the closed end is closed (or sealed or covered) by a metal material.

[0087] The open end of the resonant cavity 112 is disposed on the top surface 1102 of the resonant body 110 , that is, the resonant cavity 112 opens on the top surface 1102 of the resonant body 110 .

[0088] Figure 4 A schematic cross-sectional view showing an example of the structure of the resonator 110 of the present application is shown. Figure 2 and Figure 4 As shown, the resonant cavity 112 can be formed by providing a through hole in the resonant body 110 .

[0089] In this case, a metal plate may be provided on the bottom surface of the resonator 110 as a metal material for closing the closed end.

[0090] Alternatively, the radio frequency chip of the present application needs to be set on a PCB when in use.

[0091] For example, Figure 12 As shown, a groove for accommodating the resonator 110 can be provided on the PCB, and the bottom surface of the groove can be covered with a metal material (for example, by electroplating, vapor deposition or sputtering). Thus, when the RF chip is configured on the PCB, the resonator 110 is accommodated in the groove of the PCB, so that the closed end can be closed by the metal material covering the bottom surface of the groove.

[0092] For example, Figure 11 As shown, a through hole for accommodating the resonator 110 can be provided on the PCB, and a metal plate is provided on the bottom surface of the PCB at a position corresponding to the through hole. Therefore, when the RF chip is configured on the PCB, the resonator 110 is accommodated in the groove of the PCB, so that the closed end can be closed by the metal plate.

[0093] Figure 5 A schematic cross-sectional view showing another example of the structure of the resonator 110 of the present application is shown. Figure 5 As shown, the resonant cavity 112 can be formed by providing a groove in the resonator 110. In this case, the bottom surface of the groove can be covered with a metal material (for example, by electroplating, vapor deposition or sputtering).

[0094] The slot 114 is provided on a side wall of the resonator 110 for connecting the outer wall of the resonator 110 with the side wall of the resonant cavity 112 . In the present application, the width of the slot 114 is sufficient to allow the feeder line 140 described later to pass through, and is not particularly limited in the present application.

[0095] like Figure 2 and Figure 4 As shown, the groove 114 may be formed to pass through the top and bottom surfaces of the resonator 110 .

[0096] Or, as Figure 5 As shown, the groove 114 may be formed as a groove that does not penetrate the top surface and the bottom surface of the resonator 110 .

[0097] In the present application, the material of the resonator 110 can be a waveguide material, such as lithium niobate (LiNbO3), III-V semiconductor compounds, silicon dioxide (SiO2), silicon-on-insulator (SOI), polymer or glass.

[0098] In other words, the resonator 110 may be a waveguide (or an optical waveguide).

[0099] Figure 3 This is a dimension diagram of the components of the radio frequency chip of this application, such as Figure 3 As shown, the diameter of the resonant cavity 112 is Ld, the diameter of the metal connector is Cd, and the depth of the resonant cavity 112 is Ls.

[0100] Then the relationship between Ld and Cd satisfies: Ld is the same or approximately the same as Cd, that is, the deviation between Ld and Cd is within a preset range (which can be set according to specific application scenarios or usage requirements, etc.), that is:

[0101] Ld=Cd, or Ld≈Cd.

[0102] Furthermore, there is a corresponding relationship between the operating frequency f of the resonator 110 (or the optical waveguide formed by the resonator 110) and the cross-sectional diameter Cd of the metal connector. For example, the corresponding relationship may include but is not limited to:

[0103] f≥1.841c / 2×π×Cd, where c represents the speed of light.

[0104] Furthermore, the depth Ls of the resonant cavity 112 needs to satisfy a quarter-wavelength resonance condition, i.e., the deviation between Ls and 0.25×λd is within a preset range (which can be set based on specific application scenarios or usage requirements), where λd is the wavelength of the electromagnetic signal. In other words, Ls = λd, or Ls ≈ λd.

[0105] B. Redistribution layer (RDL) 120

[0106] Among them, redistribution can also be called pad redistribution, indicating that in order to increase the lead spacing and meet the requirements of the flip-chip soldering process, the leads of the chip need to be redistributed.

[0107] like Figure 2 As shown, the RDL 120 includes an RDL metal bottom layer 122 , an RDL dielectric layer 124 , and an RDL metal top layer 126 in a stacked configuration.

[0108] The RDL metal bottom layer 122 and the RDL metal top layer 126 are made of metal.

[0109] The RDL metal bottom layer 122 is disposed on the top surface 1102 of the resonator 110 (ie, the open end surface of the resonator 110 where the resonant cavity 112 is disposed).

[0110] The RDL dielectric layer 124 is located between the RDL metal bottom layer 122 and the RDL metal top layer 126 . As an example but not a limitation, the material of the RDL dielectric layer 124 may be, for example, polyetheretherketone.

[0111] It should be understood that the materials of the RDL dielectric layer 124 listed above are merely exemplary, and the material of the RDL dielectric layer 124 may also be the same as the material used in the prior art.

[0112] A through-hole is formed on the RDL metal bottom layer 122. The shape of the through-hole corresponds to the shape of the resonant cavity 112 (or the shape of the metal connector). For example, the through-hole is circular. Furthermore, the size of the through-hole corresponds to (for example, is the same as or approximately the same as) the size of the resonant cavity 112 (or the size of the metal connector). For example, the diameter of the through-hole is Ld. Furthermore, the center of the through-hole is coaxial with the center of the resonant cavity 112 (specifically, the center of the cross section of the resonant cavity 112).

[0113] In addition, a through hole for connecting the RDL metal bottom layer 122 and an opening on the outer wall of the RDL metal bottom layer 122 is provided on one side wall of the RDL metal bottom layer 122 . The width of the opening can allow the feed line 140 described later to pass through, which is not particularly limited in this application.

[0114] Similarly, through holes are formed on the top RDL metal layer 126, and the shape of the through holes corresponds to the shape of the resonant cavity 112 (or, the shape of the metal connector). For example, the through holes are formed as circular. Also, the size of the through holes corresponds to the size of the resonant cavity 112 (or, the size of the metal connector) (e.g., the same or approximately the same). And, the centers of the through holes are coaxially arranged with the center of the resonant cavity 112 (specifically, the cross-section of the resonant cavity 112).

[0115] C. Radiator 130

[0116] The radiator 130 is made of metal and is formed in a centrosymmetric shape. Specifically, it includes a plurality of resonant arms, and the plurality of resonant arms are symmetrically arranged with respect to the center of symmetry. For example, as Figure 2 and Figure 6 shown, the radiator 130 can be formed in a "cross" shape.

[0117] As Figure 2 shown, the radiator 130 is on the surface of the RDL dielectric layer 124 facing the bottom RDL metal layer 122.

[0118] Among them, the center of symmetry of the radiator 130 is coaxially arranged with the center of symmetry of the resonant cavity 112 (or, the center of symmetry of the metal connector). That is, the radiator 130 is within the range of the through holes of the bottom RDL metal layer 122. Or, the radiator 130 is within the range of the resonant cavity 112.

[0119] It should be understood that the structures of the radiator 130 shown in the above-listed Figure 2 and Figure 6 are only exemplary illustrations, and the present application is not limited thereto.

[0120] For example, as Figure 7 shown, the radiator 130 can also be formed in a "plus" shape.

[0121] For another example, as Figure 8 shown, the radiator 130 can also be formed in an "X" shape.

[0122] For another example, as Figure 9 shown, the radiator 13​​​​​​​​​​The feeding line 140 is disposed in the slot 114 (and the opening of the RDL metal bottom layer 122 ), or in other words, the feeding line 140 passes through the space in the slot 114 . Thus, one end of the feeding line 140 is inserted into the resonant cavity 112 .

[0126] Furthermore, a field end of the feed line 140 is connected to the chip body 200 , so that the feed line 140 can transmit electromagnetic signals between the chip body 200 and the coupling structure 100 .

[0127] Next, the dimensions of the feeder line 140 will be described.

[0128] Figures 6 to 10 The configuration relationship of the radiator 130, the feed line 140 and the resonant cavity 112 is shown. Figures 6 to 10 As shown, it is assumed that the feed line 140 is inserted into the resonant cavity 112 along direction #A, or in other words, the slot 114 is arranged along direction #A. Furthermore, it is assumed that the length of the portion of the feed line 140 inserted into the resonant cavity 112 is L1, the length of the radiator 130 in direction #A is L2, and the length of the resonant cavity 112 in direction #A (or in other words, the diameter of the resonant cavity) is L3.

[0129] In order to reduce the reflection coefficient, the following relationship can be satisfied between L1, L2 and L3:

[0130] L1+0.5×L2<0.5×L3.

[0131] It should be understood that the relationship between L1, L2 and L3 listed above is only an example, and this application is not limited to this. Those skilled in the art can arbitrarily set or change L1, L2 and L3 according to actual needs, as long as the signal quality of the electromagnetic signal transmitted between the chip body 200 and the coupling structure 100 meets the use requirements.

[0132] Figure 11 An example of the configuration relationship between PCB, RF chip and metal connector is shown. Figure 11 As shown, a through hole is formed on the PCB for accommodating the resonator 110. A metal plate is provided at the bottom of the through hole to seal the bottom of the resonant cavity 112. The depth Ls of the resonant cavity 112, the height Dd of the solder ball on the PCB, and the thickness St of the PCB satisfy:

[0133] Ls≥Dd+St.

[0134] Figure 12 An example of the configuration relationship between PCB, RF chip and metal connector is shown. Figure 12As shown, a groove for accommodating the resonator 110 is formed on the PCB, and a metal layer is formed at the bottom of the groove, which is used to close the bottom of the resonant cavity 112. The depth Ls of the resonant cavity 112, the height Dd of the solder ball on the PCB, and the depth and thickness St' of the PCB groove meet the following conditions:

[0135] Ls≥Dd+St'.

[0136] By way of example and not limitation, in one possible implementation, the polymer transmission cable is a solid core structure made of polytetrafluoroethylene (PTFE), which has a relative dielectric constant εr of 2.1 and a loss tangent Df of 0.0002 in the D band. The polymer transmission cable has a diameter Od of 2 mm and is inserted into the metal connector via a tapered structure. The diameter Cd of the metal connector is 1.65 mm, and the diameter of the through hole 310 formed on the packaging structure 300 for accommodating the metal connector (or, the diameter of the resonant cavity 112) is Td of 1.65 mm. The thickness of the RDL metal top layer is 0.007 mm, the thickness of the RDL intermediate dielectric layer is Sh of 0.05 mm, and the thickness of the RDL metal bottom layer is 0.007 mm. The material of the RDL intermediate dielectric layer is polyetheretherketone (PEEK), which has a relative dielectric constant εr of 3.2 and a loss tangent Df of 0.004. Feed line 140 has a width Mw of 0.1 mm, slot 114 has a width Sw of 0.3 mm, and feed line 140 extends into resonant cavity 112 for a length L1 of 0.42 mm. Radiator 130 is formed as a cross-shaped patch with an arm length L2 of 0.53 mm and an arm width Ct of 0.1 mm. Resonant cavity 112 has a depth Ls of 0.45 mm. The PCB is Rogers 5800, with a thickness St of 0.254 mm.

[0137] Figure 13 is a schematic diagram showing the relationship between the reflection parameters and frequency of the radio frequency chip of this application, Figure 14 This is a schematic diagram of the relationship between the transmission energy and frequency of the RF chip of this application. In the electromagnetic simulation experiment, according to the above structural dimensions, the electromagnetic simulation calculation is performed, and the S parameters of this coupling structure scheme in the D bandwidth (D-band) can be obtained as follows: Figure 13 and Figure 14 From the calculation results, it can be seen that within the 110-150 GHz frequency band, the reflection parameter S11 is less than -10 dB and the transmission parameter S21 is greater than -3.05 dB, indicating that the solution of this application has good electromagnetic transmission performance and can achieve a good electromagnetic coupling effect.

[0138] Figure 15 This is a schematic diagram of the electric field distribution of the coupling structure of the present application. According to the above structural dimensions, the electric field simulation experiment is carried out, and the calculation results are as follows: Figure 15As shown. Figure 15 As can be seen from the figure, the high-frequency signal is coupled from the RF chip to the feeding microstrip line on the redistribution layer through the silicon via. The transmission mode is quasi-TEM mode. The TEM mode is converted into TE11 mode through the radiator 130 (or the metal cross patch antenna) and the resonant cavity 112, and then the transmission mode is converted into HE11 mode through the metal connector.

[0139] That is, according to the solution provided in the present application, by designing a centrally symmetrical radiator on the redistribution layer of the chip and providing a through hole for embedding a metal connector on the chip packaging structure, the signal generated by the chip body can be efficiently coupled to the polymer transmission line. Since the above structure is encapsulated in the chip, the insertion loss caused by the connection between the chip and the coupling structure can be reduced, thereby improving the coupling efficiency. In addition, the integration of the chip and the coupling structure can be improved, which is convenient for large-scale processing.

[0140] Figure 16 Schematic diagram of an example of a signal transceiver of a radio frequency chip applicable to the present application, such as Figure 16 As shown, the signal transceiver includes a plurality of radio frequency chips, wherein at least one radio frequency chip among the plurality of radio frequency chips has the above Figures 1 to 12 The structure of the RF chip shown in any of the accompanying drawings. Here, in order to avoid redundancy, its detailed description is omitted. Moreover, when the signal transceiver includes multiple RF chips of the present application, the structures of the multiple RF chips can be the same or different, and this application does not specifically limit it.

[0141] Figure 17 This is a schematic structural diagram of an example of a data center cabinet that is suitable for the radio frequency chip of this application. Figure 17 As shown, the data center cabinet includes multiple processing devices (e.g., single boards), each computing device includes one or more signal transceivers, each signal transceiver includes multiple RF chips, wherein at least one RF chip in the multiple RF chips has the above-mentioned Figures 1 to 12 The structure of the RF chip shown in any of the accompanying drawings. Here, in order to avoid redundancy, its detailed description is omitted. Moreover, when the signal transceiver includes multiple RF chips of the present application, the structures of the multiple RF chips can be the same or different, and this application does not specifically limit it.

[0142] Figure 18 : is a schematic structural diagram of an example of a data center system that is applicable to the radio frequency chip of this application. Figure 18As shown, the data center system includes multiple data center cabinets, wherein each data center cabinet includes one or more communication devices or signal transceivers for communicating with other data center cabinets, wherein each signal transceiver includes multiple radio frequency chips, wherein at least one radio frequency chip in the multiple radio frequency chips has the above-mentioned Figures 1 to 12 The structure of the RF chip shown in any of the accompanying drawings. Here, in order to avoid redundancy, its detailed description is omitted. Moreover, when the signal transceiver includes multiple RF chips of the present application, the structures of the multiple RF chips can be the same or different, and this application does not specifically limit it.

[0143] In the several embodiments provided in this application, it should be understood that the disclosed systems and devices can be implemented in other ways. For example, the device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0144] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple units. Some or all of the units may be selected according to actual needs to achieve the purpose of the present embodiment.

[0145] The above description is merely a specific embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

Claims

1. A radio frequency chip, characterized in that: include: A chip body (200) is used to generate or process electromagnetic signals; A coupling structure (100) comprising: A resonator (110) is formed with a resonant cavity (112) and a groove (114); the inner wall of the resonant cavity (112) is made of metal; one end of the resonant cavity (112) is open at the top surface (1102) of the resonator (110); the other end of the resonant cavity is closed by a metal material; the cross section of the resonant cavity (112) is formed into a centrally symmetrical shape; the groove (114) connects the outer wall of the resonator (110) and the inner wall of the resonant cavity (112); A redistribution layer (RDL) (120), disposed above the top surface (1102), comprising an RDL dielectric layer (124); The radiator (130) is made of metal and formed into a centrally symmetrical shape, and is arranged on the surface of the RDL dielectric layer (124) facing the resonator (110) and accommodated in the resonant cavity (112); A feed line (140) is housed in the slot (114), one end of which is connected to the chip body (200) and the other end of which is inserted into the resonant cavity (112); A packaging structure (300) is used to package the chip body (200) and cover the redistribution layer (RDL) (120), wherein a through hole (310) for accommodating a metal connector is formed on the packaging structure (300), wherein one end of the metal connector abuts against a surface of the redistribution layer (RDL) (120) facing away from the resonator (110), and the other end of the metal connector is used to connect to a polymer transmission cable, and the cross section of the through hole (310) is formed into a centrally symmetrical shape; The symmetry center of the radiator (130), the symmetry center of the resonant cavity (112), and the symmetry center of the through hole (310) are coaxially arranged, and the deviation of the cross-sectional dimensions between the through hole (310) and the resonant cavity (112) is within a first preset range.

2. The radio frequency chip according to claim 1, characterized in that: The depth of the resonant cavity (112) deviates from a first value within a second preset range, and the first value is one quarter of the wavelength of the electromagnetic signal.

3. The radio frequency chip according to claim 2, characterized in that: The feeding line (140) is inserted into the resonant cavity (112) along a first direction, The length L1 of the first portion of the feed line (140) inserted into the resonant cavity (112) is determined based on the length L2 of the radiator (130) in the first direction and the length L3 of the resonant cavity (112) in the first direction, or The L2 is determined based on the L1 and the L3, or The L3 is determined according to the L1 and the L2.

4. The radio frequency chip according to claim 3, characterized in that: The length L1, the length L2, and the length L3 satisfy the following relationship: L1+0.5×L2<0.5×L3.

5. The radio frequency chip according to any one of claims 1 to 4, characterized in that: The resonator (110) is made of a waveguide material, and the operating frequency f of the waveguide material corresponds to the cross-sectional diameter D1 of the metal connector.

6. The radio frequency chip according to claim 3, characterized in that: The resonator (110) is made of a waveguide material, and the operating frequency f of the waveguide material corresponds to the cross-sectional diameter D1 of the metal connector, and the operating frequency f and the cross-sectional diameter D1 satisfy the following relationship: f≥1.841c / (2×π×D1) Here, c represents the speed of light.

7. The radio frequency chip according to any one of claims 1 to 4, characterized in that: The depth of the resonant cavity (112) is greater than or equal to the sum of a second value and a third value, wherein the second value is the depth of a recessed structure in a printed circuit board (PCB) for accommodating the coupling structure (100), and the third value is the height of a solder ball in the PCB.

8. The radio frequency chip according to any one of claims 1 to 4, characterized in that: The cross-sections of the resonant cavity (112) and the metal connector are circular, and the deviation between the diameter of the resonant cavity and the diameter of the metal connector is within a third preset range.

9. The radio frequency chip according to any one of claims 1 to 4, characterized in that: The radiator (130) is formed into one of a cross structure, a rice-shaped structure, an X-shaped structure, a Chinese-shaped structure or a Chinese-shaped structure.

10. A signal transceiver, characterized in that: include: The radio frequency chip according to any one of claims 1 to 9; The printed circuit board PCB is provided with a recessed structure for accommodating the radio frequency chip.

11. The signal transceiver according to claim 10, characterized in that: The recessed structure is a through hole or a groove.

12. A communication device, characterized in that: include: The signal transceiver according to claim 10 or 11.

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